Organic electroluminescence element

Abstract

The present invention relates to an organic electroluminescent device comprising at least one light-emitting layer B consisting of one or more sublayers, where the one or more sublayers as a whole are composed of at least one host material H B , at least one phosphorescent material P B , at least one small FWHM emitter S B and at least one TADF material E B where S B emits light with a full width at half maximum (FWHM) of 0.25 eV or less.

Description

[Technical field]

[0001] The present invention relates to an organic electroluminescent device comprising one or more light-emitting layers B, each of which is made up of one or more sub-layers, the one or more sub-layers of each light-emitting layer B being, taken together, composed of at least one host material H. B , at least one phosphorescent material P B , at least one small FWHM emitter S B and at least one TADF material E B wherein at least one, and preferably each, S B The organic electroluminescent device according to the present invention emits light having a full width at half maximum (FWHM) of 0.25 eV or less. The present invention also relates to a method of generating light using the organic electroluminescent device according to the present invention. Summary of the Invention [Problem to be solved by the invention]

[0002] Organic electroluminescent devices, including one or more organic-based light-emitting layers, such as organic light-emitting diodes (OLEDs), light-emitting electrochemical cells (LECs) and light-emitting transistors, are becoming increasingly important. In particular, OLEDs are promising devices for electronic products, such as screens, displays and lighting devices. In contrast to most electroluminescent devices that are essentially inorganic-based, organic-based organic electroluminescent devices are usually somewhat flexible and can be manufactured, especially in thin films. OLED-based screens and displays already available today offer good efficiency and long life, or good color purity and long life, but none of them combine the three properties: good efficiency, long life, and good color purity.

[0003] The color purity or color point of an OLED is generally given by CIEx and CIEy coordinates, while the color gamut of a next-generation display is given by so-called BT-2020 and DCPI3 values. In general, to obtain such color coordinates, the upper light-emitting element needs to modify the cavity to adjust the color coordinates. To target such color gamut while achieving high efficiency in the upper light-emitting element, a narrow emission spectrum is required in the lower light-emitting element.

[0004] Conventional phosphorescent emitters exhibit somewhat broad emission, which is reflected by the broad emission of phosphorescent OLEDs (PHOLEDs), which typically have a full width at half maximum (FWHM) of the emission spectrum larger than 0.25 eV. The broad emission spectrum of the PHOLED in the bottom device results in a large loss of outcoupling efficiency for top light-emitting device structures targeting the BT-2020 and DCPI tri-color regions.

[0005] In addition, phosphorescent materials are typically based on transition metals, such as iridium, which is generally not abundant and is therefore a very expensive material in an OLED stack. Therefore, transition metal-based materials have the greatest potential for reducing the cost of OLEDs. Reducing the transition metal content in an OLED stack is a key performance indicator for pricing OLED-applied products.

[0006] Recently, some fluorescent or thermally-activated-delayed-fluorescence (TADF) emitters have been developed that exhibit somewhat narrower emission spectra, typically exhibiting an FWHM of the emission spectrum below 0.25 eV, and are therefore suitable for achieving the BT-2020 and DCPI tri-color ranges. However, such fluorescent and TADF emitters generally suffer from low efficiency due to a short lifetime, as well as a drop in efficiency at even higher luminances (i.e., roll-off behavior of OLEDs), e.g., due to exciton-polaron annihilation or exciton-exciton annihilation.

[0007] Such shortcomings can be overcome to some extent by applying the so-called hyper approach. The latter relies on the use of an energy pump that transfers energy to a fluorescent emitter that preferably exhibits a narrow emission spectrum, as mentioned above. The energy pump is, for example, a TADF material exhibiting reverse-intersystem crossing (RISC) or a transition metal complex exhibiting efficient intersystem crossing (ISC). However, such an approach still fails to provide an organic electroluminescent device that has all of the above-mentioned favorable characteristics, i.e., good efficiency, long lifetime, and good color purity.

[0008] The central element of an organic electroluminescent device for generating light is typically at least one light-emitting layer located between a positive electrode and a negative electrode. When a voltage (and current) is applied to the organic electroluminescent device, holes are injected from the positive electrode and electrons are injected from the negative electrode.

[0009] Typically, a hole transport layer is located between the light emitting layer and the positive electrode, and an electron transport layer is usually located between the light emitting layer and the negative electrode. The different layers are arranged in sequence. High energy excitons are generated by recombination of holes and electrons in the light emitting layer. Decay of such excited states (e.g., singlet states such as S1 and / or triplet states such as T1) to the bottom state (S0) preferably causes light emission. [Means for solving the problem]

[0010] Surprisingly, it has been found that an emissive layer of an organic electroluminescent device consisting of one or more layers including a phosphorescent material, a small full width at half maximum (FWHM) emitter, a host material, and optionally a TADF material, provides an organic electroluminescent device that has a long lifetime, a high quantum yield, and exhibits narrow emission that is ideally suited to achieving the BT-2020 and DCPI tri-color regions.

[0011] Here, phosphorescent materials and / or optional TADF materials can transfer energy to small full width at half maximum (FWHM) emitters that emit light. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0012] The present invention relates to an organic electroluminescent device comprising at least one light-emitting layer B consisting of one or more sub-layers adjacent to one another and comprising as a whole: (i) The lowest excited singlet state energy level E(S1 H ) and the lowest excited triplet state energy level E(T1 H At least one host material H B , (ii) The lowest excited singlet state energy level E(S1 P ) and the lowest excited triplet state energy level E(T1 P At least one phosphorescent material P B , (iii) The lowest excited singlet state energy level E(S1 S ) and the lowest excited triplet state energy level E(T1 S At least one small full width at half maximum (FWHM) emitter S B , where S B emits light having a full width at half maximum (FWHM) of 0.25 eV or less, and selectively (iv) The lowest excited singlet state energy level E(S1 E ) and the lowest excited triplet state energy level E(T1 E At least one thermally activated delayed fluorescence (TADF) material E B , Here, one or more sub-layers located on the outer surface of the light-emitting layer B are made of phosphorescent material P B , small FWHM emitter S B , and TADF material E B The material comprises at least one (emitter) material selected from the group consisting of:

[0013] One aspect of the present invention relates to an organic electroluminescent device comprising at least one light-emitting layer B comprising one or more sub-layers, the one or more sub-layers being adjacent to one another and comprising, in total: (i) The lowest excited singlet state energy level E(S1 H ) and the lowest excited triplet state energy level E(T1 H ) a host material H B , (ii) The lowest excited singlet state energy level E(S1 P ) and the lowest excited triplet state energy level E(T1 P ) Phosphorescent material P B , (iii) The lowest excited singlet state energy level E(S1 S ) and the lowest excited triplet state energy level E(T1 S ) with a small full width at half maximum (FWHM) emitter S B , where S B emits light having a full width at half maximum (FWHM) of 0.25 eV or less, and selectively (iv) The lowest excited singlet state energy level E(S1 E ) and the lowest excited triplet state energy level E(T1 E ) Thermally activated delayed fluorescence (TADF) material E B , Here, one or more sub-layers located on the outer surface of the light-emitting layer B are made of phosphorescent material P B , small FWHM emitter S B , and TADF material E B The material comprises at least one (emitter) material selected from the group consisting of:

[0014] In one embodiment of the present invention, at least one of the one or more sublayers of at least one light-emitting layer B comprises:

[0015] (iv) The lowest excited singlet state energy level E(S1 E ) and the lowest excited triplet state energy level E(T1 E At least one thermally activated delayed fluorescence (TADF) material E B .

[0016] In one embodiment of the present invention, the organic electroluminescent device comprises at least one light-emitting layer B consisting of one or more sub-layers, where one or more sub-layers of the light-emitting layer B comprise: (i) The lowest excited singlet state energy level E(S1 H ) and the lowest excited triplet state energy level E(T1 H At least one host material H B , (ii) The lowest excited singlet state energy level E(S1 P ) and the lowest excited triplet state energy level E(T1 P At least one phosphorescent material P B , (iii) The lowest excited singlet state energy level E(S1 S ) and the lowest excited triplet state energy level E(T1 S At least one small full width at half maximum (FWHM) emitter S B , Here, S B emits light having a full width at half maximum (FWHM) of 0.25 eV or less, and selectively (iv) The lowest excited singlet state energy level E(S1 E ) and the lowest excited triplet state energy level E(T1 E At least one thermally activated delayed fluorescence (TADF) material E B .

[0017] In one embodiment of the present invention, the organic electroluminescent device comprises at least one light-emitting layer B consisting of one or more sub-layers, where one or more sub-layers of the light-emitting layer B comprise: (i) The lowest excited singlet state energy level E(S1 H ) and the lowest excited triplet state energy level E(T1 H ) a host material H B , (ii) The lowest excited singlet state energy level E(S1 P ) and the lowest excited triplet state energy level E(T1 P ) Phosphorescent material PB , (iii) The lowest excited singlet state energy level E(S1 S ) and the lowest excited triplet state energy level E(T1 S ) with a small full width at half maximum (FWHM) emitter S B , Here, S B emits light having a full width at half maximum (FWHM) of 0.25 eV or less; and (iv) The lowest excited singlet state energy level E(S1 E ) and the lowest excited triplet state energy level E(T1 E ) Thermally activated delayed fluorescence (TADF) material E B .

[0018] In one embodiment of the present invention, the organic electroluminescent device comprises at least one light-emitting layer B consisting of one or more sub-layers, where one or more sub-layers of the light-emitting layer B comprise: (i) The lowest excited singlet state energy level E(S1 H ) and the lowest excited triplet state energy level E(T1 H At least one host material H B , (ii) The lowest excited singlet state energy level E(S1 P ) and the lowest excited triplet state energy level E(T1 P At least one phosphorescent material P B , (iii) The lowest excited singlet state energy level E(S1 S ) and the lowest excited triplet state energy level E(T1 S At least one small full width at half maximum (FWHM) emitter S B , Here, S B emits light having a full width at half maximum (FWHM) of 0.25 eV or less; and (iv) The lowest excited singlet state energy level E(S1 E ) and the lowest excited triplet state energy level E(T1 E At least one thermally activated delayed fluorescence (TADF) material E B .

[0019] In one embodiment of the present invention, the organic electroluminescent device comprises at least one light-emitting layer B comprising: (i) The lowest excited singlet state energy level E(S1 H ) and the lowest excited triplet state energy level E(T1 H At least one host material H B , (ii) The lowest excited singlet state energy level E(S1 P ) and the lowest excited triplet state energy level E(T1 P At least one phosphorescent material P B , (iii) The lowest excited singlet state energy level E(S1 S ) and the lowest excited triplet state energy level E(T1 S At least one small full width at half maximum (FWHM) emitter S B , where S B emits light having a full width at half maximum (FWHM) of 0.25 eV or less; and (iv) The lowest excited singlet state energy level E(S1 E ) and the lowest excited triplet state energy level E(T1 E At least one thermally activated delayed fluorescence (TADF) material E B .

[0020] In one embodiment of the present invention, the organic electroluminescent device comprises an emissive layer B consisting of exactly one layer comprising: (i) Host material H B , (ii) Phosphorescent material P B , (iii) Small full width at half maximum (FWHM) emitter S B , and optionally (iv)TADF material E B .

[0021] In a preferred embodiment, the organic electroluminescent device comprises a light-emitting layer B consisting of exactly one layer comprising: (i) at least one host material H B , (ii) at least one phosphorescent material P B , (iii) at least one small full width at half maximum (FWHM) emitter S B , and (iv) at least one thermally activated delayed fluorescent (TADF) material E B .

[0022] Sub-layer combination In a preferred embodiment of the invention, the electroluminescent device according to the invention comprises at least one light-emitting layer B consisting of exactly one (sub)layer. In a preferred embodiment of the invention, each light-emitting layer B comprised in the electroluminescent device according to the invention consists of exactly one (sub)layer. In a preferred embodiment of the invention, the electroluminescent device according to the invention comprises exactly one light-emitting layer B consisting of exactly one (sub)layer.

[0023] In yet another embodiment of the invention, an electroluminescent device according to the invention comprises at least one light-emitting layer B which consists of more than one sublayer. In yet another embodiment of the invention, each light-emitting layer B comprised in an electroluminescent device according to the invention comprises more than one sublayer. In yet another embodiment of the invention, each light-emitting layer B comprised in an electroluminescent device according to the invention consists of more than one sublayer.

[0024] In yet another embodiment of the invention, the electroluminescent device according to the invention comprises exactly one light-emitting layer B which consists of more than one sublayer. In yet another embodiment of the invention, the electroluminescent device according to the invention comprises at least one light-emitting layer B which consists of exactly two sublayers.

[0025] In yet another embodiment of the present invention, each light-emitting layer B comprised in an electroluminescent device according to the present invention consists of exactly two sublayers.In yet another embodiment of the present invention, an electroluminescent device according to the present invention comprises exactly one light-emitting layer B consisting of exactly two sublayers.

[0026] In yet another embodiment of the invention, the electroluminescent device according to the invention comprises at least one light-emitting layer B consisting of more than two sublayers. In yet another embodiment of the invention, each light-emitting layer B comprised in the electroluminescent device according to the invention consists of more than two sublayers.

[0027] In yet another embodiment of the present invention, the electroluminescent device according to the present invention comprises exactly one light-emitting layer B which consists of more than two sub-layers.

[0028] In one embodiment of the present invention, each light-emitting layer B of an organic electroluminescent device according to the present invention comprises exactly one, exactly two or exactly three sub-layers.

[0029] It is understood that the different sub-layers of light-emitting layer B do not necessarily all contain the same materials, or even the same materials in the same proportions.

[0030] The different sub-layers of the light-emitting layer B are understood to be adjacent to one another.

[0031] In one embodiment of the present invention, at least one sub-layer is made of exactly one TADF material E B and exactly one phosphorescent material P B Includes:

[0032] In one embodiment of the present invention, the electroluminescent device according to the present invention comprises at least one light-emitting layer B consisting of more than one sub-layer, where at least one sub-layer is made of a TADF material E B , phosphorescent material P B , or small FWHM emitter SB Does not include.

[0033] In one embodiment of the present invention, the electroluminescent device according to the present invention comprises at least one light-emitting layer B consisting of one or more sub-layers, where at least one sub-layer is composed of at least one host material H B , exactly one phosphorescent material P B , and exactly one small FWHM emitter S B Includes.

[0034] In one embodiment of the present invention, the electroluminescent device according to the present invention comprises at least one light-emitting layer B consisting of one or more sub-layers, where at least one sub-layer is composed of at least one host material H B , exactly one TADF material E B , exactly one phosphorescent material P B , and exactly one small FWHM emitter S B Includes.

[0035] In one embodiment of the present invention, the electroluminescent device according to the invention comprises at least one light-emitting layer B consisting of one or more sublayers, where at least one sublayer contains exactly one host material H B , exactly one TADF material E B , exactly one phosphorescent material P B , and exactly one small FWHM emitter S B Includes.

[0036] In one embodiment of the present invention, the electroluminescent device according to the invention comprises at least one light-emitting layer B consisting of one or more sublayers, where at least one sublayer contains exactly one host material H B , exactly one phosphorescent material P B , and exactly one small FWHM emitter S B Includes.

[0037] In a preferred embodiment of the invention, the electroluminescent device according to the invention comprises at least one light-emitting layer B consisting of one or more sublayers, where at least one sublayer contains exactly one host material H B Includes.

[0038] In a preferred embodiment of the present invention, the electroluminescent device according to the present invention comprises at least one light-emitting layer B consisting of one or more sub-layers, where at least one sub-layer contains exactly one TADF material E B Includes.

[0039] In a preferred embodiment of the invention, the electroluminescent device according to the invention comprises at least one light-emitting layer B consisting of one or more sub-layers, where at least one sub-layer contains exactly one phosphorescent material P B Includes.

[0040] In a preferred embodiment of the present invention, the electroluminescent device according to the present invention comprises at least one light-emitting layer B consisting of one or more sub-layers, where at least one sub-layer contains exactly one small FWHM emitter S B Includes.

[0041] In a preferred embodiment of the invention, the electroluminescent device according to the invention comprises at least one light-emitting layer B consisting of one or more sublayers, where at least one sublayer contains exactly one host material H B and exactly one TADF material E B Includes.

[0042] In a preferred embodiment of the invention, the electroluminescent device according to the invention comprises at least one light-emitting layer B consisting of one or more sublayers, where at least one sublayer contains exactly one host material H B and exactly one phosphorescent material P B Includes.

[0043] In a preferred embodiment of the invention, the electroluminescent device according to the invention comprises at least one light-emitting layer B consisting of one or more sublayers, where at least one sublayer contains exactly one host material H B and exactly one small FWHM emitter S B Includes.

[0044] In a preferred embodiment of the present invention, the electroluminescent device according to the present invention comprises at least one light-emitting layer B consisting of one or more sub-layers, where at least one sub-layer contains exactly one TADF material E B and exactly one small FWHM emitter S B Includes.

[0045] In a preferred embodiment of the present invention, the electroluminescent device according to the present invention comprises at least one light-emitting layer B consisting of one or more sub-layers, where at least one sub-layer contains exactly one TADF material E B and exactly one phosphorescent material P B Includes.

[0046] In a preferred embodiment of the invention, the electroluminescent device according to the invention comprises at least one light-emitting layer B consisting of one or more sub-layers, where at least one sub-layer contains exactly one phosphorescent material P B and exactly one small FWHM emitter S B Includes.

[0047] In a preferred embodiment of the invention, the electroluminescent device according to the invention comprises at least one light-emitting layer B consisting of one or more sublayers, where at least one sublayer contains exactly one host material H B , exactly one TADF material E B , and exactly one small FWHM emitter S B Includes.

[0048] In a preferred embodiment of the invention, the electroluminescent device according to the invention comprises at least one light-emitting layer B consisting of one or more sublayers, where at least one sublayer contains exactly one host material H B , exactly one TADF material E B , and exactly one phosphorescent material P B Includes.

[0049] In a preferred embodiment of the invention, the electroluminescent device according to the invention comprises at least one light-emitting layer B consisting of one or more sublayers, where at least one sublayer contains exactly one host material H B , exactly one phosphorescent material P B , and exactly one small FWHM emitter S B Includes.

[0050] In a preferred embodiment of the invention, the electroluminescent device according to the invention comprises at least one light-emitting layer B consisting of one or more sub-layers, where at least one sub-layer contains exactly one phosphorescent material P B , exactly one TADF material E B , and exactly one small FWHM emitter S B Includes.

[0051] In a preferred embodiment of the invention, the electroluminescent device according to the invention comprises at least one light-emitting layer B consisting of one or more sublayers, where at least one sublayer contains exactly one host material H B , exactly one TADF material E B , exactly one phosphorescent material P B , and exactly one small FWHM emitter S B Includes.

[0052] In a preferred embodiment of the present invention, a sub-layer is made of exactly one TADF material E B and each sub-layer (preferably further sub-layers) contains exactly one phosphorescent material P B and exactly one small FWHM emitter S B Includes:

[0053] In a preferred embodiment of the invention, the electroluminescent device according to the invention comprises at least one light-emitting layer B which comprises (or consists of) three or more sublayers, where the first sublayer B1 comprises exactly one TADF material E B and the second sublayer B2 comprises exactly one phosphorescent material P B and the third sublayer B3 contains exactly one small FWHM emitter S B Includes.

[0054] It is understood that the sublayers of the light-emitting layer B can be made in different orders, e.g., B1-B2-B3, B1-B3-B2, B2-B1-B3, B2-B3-B1, B3-B2-B1, B3-B1-B2, and can also have one or more different sublayers between them.

[0055] In a preferred embodiment of the present invention, the electroluminescent device according to the present invention comprises at least one light-emitting layer B which comprises (or consists of) two or more sublayers, where the first sublayer B1 comprises exactly one TADF material E B and exactly one phosphorescent material P B and the second sublayer B2 includes exactly one small FWHM emitter S B Includes.

[0056] In a preferred embodiment of the present invention, the electroluminescent device according to the present invention comprises at least one light-emitting layer B which comprises (or consists of) two or more sublayers, where the first sublayer B1 comprises exactly one TADF material E B and the second sub-layer B2 comprises exactly one phosphorescent material P B and exactly one small FWHM emitter S B Includes.

[0057] In a preferred embodiment of the invention, the electroluminescent device according to the invention comprises at least one light-emitting layer B which comprises (or consists of) two or more sub-layers, where a first sub-layer B1 contains exactly one phosphorescent material PB and the second sub-layer B2 comprises exactly one TADF material E B and exactly one small FWHM emitter S B Includes.

[0058] In a preferred embodiment of the present invention, the electroluminescent device according to the present invention comprises at least one light-emitting layer B which comprises (or consists of) two or more sublayers, where a first sublayer B1 contains exactly one small FWHM emitter S B and the second sub-layer B2 comprises exactly one TADF material E B and exactly one phosphorescent material P B In a preferred embodiment, the sub-layers B1 and B2 are (directly) adjacent to each other, i.e. in (direct) contact with each other.

[0059] It is also understood that an organic electroluminescent device according to the invention may optionally comprise one or more emissive layers that do not meet the requirements given for emissive layer B in the context of the present invention. That is, an organic electroluminescent device according to the present invention may comprise at least one emissive layer B as defined herein and may optionally comprise one or more further emissive layers to which the requirements given herein for emissive layer B do not necessarily apply. In another embodiment of the present invention, at least one, but not all, of the emissive layers comprised in an organic electroluminescent device according to the present invention is an emissive layer B as defined in a particular embodiment of the present invention.

[0060] In a preferred embodiment of the present invention, each light-emitting layer comprised in an organic electroluminescent device according to the present invention is a light-emitting layer B as defined in a specific embodiment of the present invention.

[0061] Composition of Emission Layer (EML) B (At least one) host material H B , (at least one) phosphorescent material P B , and (at least one) small FWHM emitter SB may be included in the organic electroluminescent device in any amount and in any ratio.

[0062] In a preferred embodiment, the (at least one) host material H B , (at least one) phosphorescent material P B , (at least one) thermally activated delayed fluorescent (TADF) material E B , and (at least one) small FWHM emitter S B may be included in the organic electroluminescent device in any amount and in any ratio.

[0063] In a preferred embodiment of the invention, the electroluminescent device according to the invention comprises at least one light-emitting layer B consisting of one or more sub-layers, where each of the at least one sub-layers contains (at least one) host material H B (More specifically, H P and / or H N and / or H BP ) with (at least one) small FWHM emitter S B Contains even higher weights.

[0064] In a preferred embodiment of the invention, the electroluminescent device according to the invention comprises at least one light-emitting layer B consisting of one or more sub-layers, where each of the at least one sub-layers contains (at least one) host material H B (More specifically, H P and / or H N and / or H BP ) with (at least one) phosphorescent material P B Contains even higher weights.

[0065] In a preferred embodiment of the invention, the electroluminescent device according to the invention comprises at least one light-emitting layer B consisting of one or more sub-layers, where each of the at least one sub-layers contains (at least one) host material H B (More specifically, H P and / or H Nand / or H BP ) with (at least one) TADF material E B Contains even higher weights.

[0066] In a preferred embodiment of the present invention, at least one light-emitting layer B of the organic electroluminescent device according to the present invention each contains at least one TADF material E B At least one small FWHM emitter S B Contains even higher weights.

[0067] In a preferred embodiment, in an organic electroluminescent device according to the invention, the at least one light-emitting layer B comprises (or consists of) as a whole (consisting of one (sub)layer or of more than one sublayer): (i) 30 to 99.8% by weight of one or more host materials H B , (ii) 0.1 to 30% by weight of one or more phosphorescent materials P B , (iii) 0.1 to 10 wt. % of small FWHM emitters S B , and optionally (v) 0 to 69.8 weight percent of one or more solvents.

[0068] In a preferred embodiment, in an organic electroluminescent device according to the invention, the at least one light-emitting layer B comprises (or consists of) as a whole (consisting of one (sub)layer or of more than one sublayer): (i) 30 to 99.8% by weight, preferably 60 to 99.8% by weight, of one or more host materials H B , (ii) 0.1 to 50% by weight, preferably 0.1 to 30% by weight, of one or more phosphorescent materials P B , (iii) 0.1 to 20 wt. %, preferably 0.1 to 10 wt. %, of one or more small FWHM emitters S B , and optionally (v) 0 to 3 weight percent of one or more solvents.

[0069] In a preferred embodiment, in an organic electroluminescent device according to the invention, the at least one light-emitting layer B comprises (or consists of) as a whole (consisting of one (sub)layer or of more than one sublayer): (i) 30 to 99.8% by weight of one or more host materials H B , (ii) 0.1 to 20% by weight of one or more phosphorescent materials P B , (iii) 0.1 to 10 wt. % of small FWHM emitters S B , and optionally (v) 0 to 69.8 weight percent of one or more solvents.

[0070] In a preferred embodiment, in an organic electroluminescent device according to the invention, the at least one light-emitting layer B comprises (or consists of) as a whole (consisting of one (sub)layer or of more than one sublayer): (i) 30 to 99.8% by weight, preferably 70 to 99.8% by weight, of one or more host materials H B , (ii) 0.1 to 20% by weight of one or more phosphorescent materials P B , (iii) 0.1 to 50 wt. %, preferably 0.1 to 10 wt. %, of one or more small FWHM emitters S B , and optionally (v) 0 to 3 weight percent of one or more solvents.

[0071] In a preferred embodiment, E B is optional, in the organic electroluminescent device according to the invention, the (at least one) light-emitting layer B as a whole comprises (or consists of) (one (sub)layer or more than one sublayer): (i) 30 to 99.8% by weight of one or more host materials H B , (ii) 0.1 to 30% by weight of one or more phosphorescent materials P B , (iii) 0.1 to 10 wt. % of small FWHM emitters S B , and optionally (iv) 0 to 69.8 wt.% of one or more TADF materials E B , and optionally (v) 0 to 69.8 weight percent of one or more solvents.

[0072] In a preferred embodiment, E B is optional, in the organic electroluminescent device according to the invention, the (at least one) light-emitting layer B as a whole comprises (or consists of) (one (sub)layer or more than one sublayer): (i) 30 to 99.7% by weight of one or more host materials H B , (ii) 0.1 to 30% by weight of one or more phosphorescent materials P B , (iii) 0.1 to 10 wt. % of small FWHM emitters S B , and optionally (iv) 0.1 to 69.8 wt.% of one or more TADF materials E B , and optionally (v) 0 to 69.8 weight percent of one or more solvents.

[0073] In a preferred embodiment, E B is optional, in the organic electroluminescent device according to the invention, the (at least one) light-emitting layer B as a whole comprises (or consists of) (one (sub)layer or more than one sublayer): (i) 30 to 99.8% by weight of one or more host materials H B , (ii) 0.1 to 30% by weight of one or more phosphorescent materials P B , (iii) 0.1 to 10 wt. % of small FWHM emitters S B , and optionally (iv) 0 to 69.8 wt. %, preferably 0.1 to 69.8 wt. %, of one or more TADF materials E B , and optionally (v) 0 to 3 weight percent of one or more solvents.

[0074] In a preferred embodiment, E B is optional, in the organic electroluminescent device according to the invention, the (at least one) light-emitting layer B as a whole comprises (or consists of) (one (sub)layer or more than one sublayer): (i) 30 to 99.8% by weight, preferably 30 to 99.7% by weight, of one or more host materials H B , (ii) 0.1 to 20% by weight of one or more phosphorescent materials P B , (iii) 0.1 to 10 wt. % of small FWHM emitters S B , and optionally (iv) 0 to 69.8 wt., preferably 0.1 to 69.8 wt., of one or more TADF materials E B , and optionally (v) 0 to 69.8 weight percent of one or more solvents.

[0075] In a preferred embodiment, E B is optional, in the organic electroluminescent device according to the invention, the (at least one) light-emitting layer B as a whole comprises (or consists of) (one (sub)layer or more than one sublayer): (i) 30 to 99.8% by weight, preferably 30 to 99.7% by weight, of one or more host materials H B , (ii) 0.1 to 20% by weight of one or more phosphorescent materials P B , (iii) 0.1 to 10 wt. % of small FWHM emitters S B , and optionally (iv) 0 to 69.8 wt., preferably 0.1 to 69.8 wt., of one or more TADF materials E B , and optionally (v) 0 to 3 weight percent of one or more solvents.

[0076] In a more preferred embodiment, EB is mandatory, and in the organic electroluminescent device according to the invention, the (at least one) light-emitting layer B as a whole comprises (or consists of) (one (sub)layer or more than one sublayer): (i) 30 to 87.8 wt. % of one or more host materials H B , (ii) 0.1 to 30% by weight of one or more phosphorescent materials P B , (iii) 0.1 to 10 wt. % of small FWHM emitters S B , (iv) 12 to 40 wt % of one or more TADF materials E B , and optionally (v) 0 to 57.8 weight percent of one or more solvents.

[0077] In a more preferred embodiment, E B is mandatory, and in the organic electroluminescent device according to the invention, the (at least one) light-emitting layer B as a whole comprises (or consists of) (one (sub)layer or more than one sublayer): (i) 30 to 87.8 wt. % of one or more host materials H B , (ii) 0.1 to 30% by weight of one or more phosphorescent materials P B , (iii) 0.1 to 10 wt. % of small FWHM emitters S B , (iv) 12 to 40 wt % of one or more TADF materials E B , and optionally (v) 0 to 3 weight percent of one or more solvents.

[0078] In a more preferred embodiment, E B is mandatory, and in the organic electroluminescent device according to the invention, the (at least one) light-emitting layer B as a whole comprises (or consists of) (one (sub)layer or more than one sublayer): (i) 30 to 87.8 wt. % of one or more host materials HB (Host compound H B (also designated (ii) 0.1 to 20% by weight of one or more phosphorescent materials P B , (iii) 0.1 to 10 wt. % of small FWHM emitters S B , (iv) 12 to 40 wt % of one or more TADF materials E B , and optionally (v) 0 to 57.8 weight percent of one or more solvents.

[0079] In a more preferred embodiment, E B is mandatory, and in the organic electroluminescent device according to the invention, the (at least one) light-emitting layer B as a whole comprises (or consists of) (one (sub)layer or more than one sublayer): (i) 30 to 87.8 wt. % of one or more host materials H B (Host compound H B (also designated (ii) 0.1 to 20% by weight of one or more phosphorescent materials P B , (iii) 0.1 to 10 wt. % of small FWHM emitters S B , (iv) 12 to 40 wt % of one or more TADF materials E B , and optionally (v) 0 to 3 weight percent of one or more solvents.

[0080] In one embodiment of the present invention, at least one, and preferably each, emissive layer B contains up to 5% by weight of one or more phosphorescent materials P B Includes.

[0081] In one embodiment of the present invention, the organic electroluminescent device comprises at least one light-emitting layer B comprising: (i) The lowest excited singlet state energy level E(S1 H ) and the lowest excited triplet state energy level E(T1 H At least one host material HB , (ii) The lowest excited singlet state energy level E(S1 P ) and the lowest excited triplet state energy level E(T1 P At least one phosphorescent material P B , (iii) The lowest excited singlet state energy level E(S1 S ) and the lowest excited triplet state energy level E(T1 S At least one small full width at half maximum (FWHM) emitter S B , where S B emits light with a full width at half maximum (FWHM) of 0.25 eV or less; (iv) The lowest excited singlet state energy level E(S1 E ) and the lowest excited triplet state energy level E(T1 E At least one thermally activated delayed fluorescence (TADF) material E B , Here, the relationships expressed by the following equations (1) and (2) apply: E(T1 H )>E(T1 P ) (1) E(T1 P )>E(S1 S ) (2) Here, (at least one layer), preferably each light-emitting layer B contains 5% by weight or less of one or more phosphorescent materials P B Includes.

[0082] In one embodiment of the present invention, at least one, and preferably each, light-emitting layer B comprises or consists of: (i) 30 to 96.8 wt. % of one or more host materials H B (Host compound H B (also designated (ii) 0.1 to 5% by weight of one or more phosphorescent materials P B , (iii) 0.1 to 10 wt. % of small FWHM emitters S B , (iv) 3 to 69.8 wt % of one or more TADF materials E B, and optionally (v) 0 to 66.8 weight percent of one or more solvents.

[0083] In one embodiment of the present invention, at least one, and preferably each, light-emitting layer B comprises or consists of:

[0084] (i) 30 to 96.8 wt. % of one or more host materials H B (Host compound H B (also designated (ii) 0.1 to 5% by weight of one or more phosphorescent materials P B , (iii) 0.1 to 10 wt. % of small FWHM emitters S B , (iv) 3 to 69.8 wt % of one or more TADF materials E B , and optionally (v) 0 to 3 weight percent of one or more solvents.

[0085] In one embodiment of the present invention, at least one, and preferably each, light-emitting layer B comprises or consists of: (i) 30 to 89.8 wt. % of one or more host materials H B , (ii) 0.1 to 5% by weight of one or more phosphorescent materials P B , (iii) 0.1 to 10 wt. % of small FWHM emitters S B , (iv) 10 to 40 wt % of one or more TADF materials E B , and optionally (v) 0 to 59.8 weight percent of one or more solvents.

[0086] In one embodiment of the present invention, at least one, and preferably each, light-emitting layer B comprises or consists of: (i) 30 to 89.8 wt. % of one or more host materials H B , (ii) 0.1 to 5% by weight of one or more phosphorescent materials P B , (iii) 0.1 to 10 wt. % of small FWHM emitters S B , (iv) 10 to 52 wt % of one or more TADF materials E B , and optionally (v) 0 to 3 weight percent of one or more solvents.

[0087] In one embodiment of the present invention, at least one, and preferably each, light-emitting layer B comprises or consists of: (i) 30 to 96.8 wt. % of one or more host materials H B , (ii) 0.1 to 5% by weight of one or more phosphorescent materials P B , (iii) 0.1 to 5 wt. % of small FWHM emitters S B , (iv) 3 to 69.8 wt % of one or more TADF materials E B , and optionally (v) 0 to 66.8 weight percent of one or more solvents.

[0088] In one embodiment of the present invention, at least one, and preferably each, light-emitting layer B comprises or consists of: (i) 30 to 96.8 wt. % of one or more host materials H B , (ii) 0.1 to 5% by weight of one or more phosphorescent materials P B , (iii) 0.1 to 5 wt. % of small FWHM emitters S B , (iv) 3 to 69.8 wt % of one or more TADF materials E B , and optionally (v) 0 to 3 weight percent of one or more solvents.

[0089] In a particularly preferred embodiment of the present invention, at least one, preferably each, light-emitting layer B comprises or consists of: (i) 30 to 87.8 wt. % of one or more host materials H B , (ii) 0.1 to 5% by weight of one or more phosphorescent materials P B , (iii) 0.1 to 5 wt. % of small FWHM emitters S B , (iv) 12 to 40 wt % of one or more TADF materials E B , and optionally (v) 0 to 57.8 weight percent of one or more solvents.

[0090] In a particularly preferred embodiment of the present invention, at least one, preferably each, light-emitting layer B comprises or consists of: (i) 30 to 87.8 wt. % of one or more host materials H B , (ii) 0.1 to 5% by weight of one or more phosphorescent materials P B , (iii) 0.1 to 5 wt. % of small FWHM emitters S B , (iv) 12 to 57 wt % of one or more TADF materials E B , and optionally (v) 0 to 3 weight percent of one or more solvents.

[0091] In one embodiment of the present invention, at least one, and preferably each, emissive layer B contains up to 3% by weight of phosphorescent material P B Includes.

[0092] In one embodiment of the present invention, at least one, and preferably each, emissive layer B contains up to 1% by weight of phosphorescent material P B Includes.

[0093] In one embodiment of the present invention, at least one, preferably each, emitting layer B contains 10-40 wt. % of one or more TADF materials E B Includes.

[0094] In one embodiment of the present invention, the (at least one) phosphorescent material P B (At least one) small full width at half maximum (FWHM) emitter S B Mass ratio (S B:P B ) is ≧1.

[0095] In one embodiment of the present invention, at least one phosphorescent material P B At least one small full width at half maximum (FWHM) emitter S B Mass ratio (S B :P B In one embodiment of the present invention, in each light-emitting layer B, at least one phosphorescent material P B At least one small full width at half maximum (FWHM) emitter S B Mass ratio (S B :P B ) is ≧1.

[0096] In one embodiment of the present invention, the (at least one) phosphorescent material P B (At least one) small full width at half maximum (FWHM) emitter S B Mass ratio (S B :P B ) is < 1.

[0097] In one embodiment of the present invention, at least one phosphorescent material P B At least one small full width at half maximum (FWHM) emitter S B Mass ratio (S B :P B In one embodiment of the present invention, in each emitting layer B, at least one phosphorescent material P B At least one small full width at half maximum (FWHM) emitter S B Mass ratio (S B :P B ) is < 1.

[0098] In one embodiment of the present invention, S B :P BThe mass ratio of S is in the range of 1:1 to 30:1, in the range of 1.5:1 to 25:1, in the range of 2:1 to 20:1, in the range of 4:1 to 15:1, in the range of 5:1 to 12:1, or in the range of 10:1 to 11:1. For example, B :P B in the range of (approximately) 20:1, 15:1, 12:1, 10:1, 8:1, 5:1, 4:1, 2:1, 1.5:1, or 1:1 by mass.

[0099] In one embodiment of the present invention, the (at least one) phosphorescent material P B (At least one) small full width at half maximum (FWHM) emitter S B Mass ratio (S B :P B ) is < 1.

[0100] In one embodiment of the present invention, P B :S B The mass ratio of S is in the range of 1:1 to 30:1, in the range of 1.5:1 to 25:1, in the range of 2:1 to 20:1, in the range of 4:1 to 15:1, in the range of 5:1 to 12:1, or in the range of 10:1 to 11:1. For example, B :P B in the range of (approximately) 20:1, 15:1, 12:1, 10:1, 8:1, 5:1, 4:1, 2:1, 1.5:1, or 1:1 by mass.

[0101] As stated above, it is understood that the different sub-layers of light-emitting layer B do not necessarily all contain the same materials, or even the same materials in the same proportions.

[0102] S1-T1-Energy-related In one embodiment of the present invention, the relationships represented by the following formulas (1) and (2) apply: E(T1 H )>E(T1 P ) (1) E(T1 P )>E(S1 S ) (2), Therefore, for each host material H BThe lowest excited triplet state T1 of H is each phosphorescent material P B The lowest excited triplet state T1 of P The energy is higher, and each phosphorescent material P B The lowest excited triplet state T1 of P is the FWHM of each small emitter S B The lowest excited singlet state S1 S Even higher energy.

[0103] In one embodiment, the above relationships expressed by formulas (1) and (2) apply to the materials contained in the same light-emitting layer B of an organic electroluminescent device according to the present invention.

[0104] In one embodiment, an organic electroluminescent device comprising at least one light-emitting layer B comprises: (i) The lowest excited singlet state energy level E(S1 H ) and the lowest excited triplet state energy level E(T1 H At least one host material H B , (ii) The lowest excited singlet state energy level E(S1 P ) and the lowest excited triplet state energy level E(T1 P At least one phosphorescent material P B , (iii) The lowest excited singlet state energy level E(S1 S ) and the lowest excited triplet state energy level E(T1 S At least one small full width at half maximum (FWHM) emitter S B , where S B emits light having a full width at half maximum (FWHM) of 0.25 eV or less; and (iv) The lowest excited singlet state energy level E(S1 E ) and the lowest excited triplet state energy level E(T1 E At least one thermally activated delayed fluorescence (TADF) material E B , Here, the relationships expressed by the following equations (1) and (2) apply: E(T1 H )>E(T1 P ) (1) E(T1 P )>E(S1 S ) (2).

[0105] In one embodiment, the above relationships represented by formulas (1) and (2) apply to the materials contained in any one of the at least one light-emitting layer B of the organic electroluminescent device according to the present invention.

[0106] In a preferred embodiment of the present invention, the relationships represented by the following formulas (3) and (4) apply: E(T1 H )>E(T1 E ) (3) E(T1 E )>E(T1 P ) (4), Therefore, for each host material H B The lowest excited triplet state T1 of H is the TADF material E B The lowest excited triplet state T1 of E The energy is higher and each TADF material E B The lowest excited triplet state T1 of E is each phosphorescent material P B The lowest excited triplet state T1 of P Even higher energy.

[0107] In one embodiment, the above-mentioned relationships represented by formulas (3) and (4) apply to the materials contained in any one of at least one light-emitting layer B of an organic electroluminescent device according to the present invention. In one embodiment, the above-mentioned relationships represented by formulas (3) and (4) apply to the materials contained in the same light-emitting layer B of an organic electroluminescent device according to the present invention.

[0108] In an alternative embodiment of the invention, the relationships represented by the following equations (5) and (6) apply: E(T1 P )>E(T1 E ) (5) E(S1E )>E(S1 S ) (6), Therefore, each phosphorescent material P B The lowest excited triplet state T1 of P is the TADF material E B The lowest excited triplet state T1 of E The energy is higher and each TADF material E B The lowest excited triplet state S1 E is the FWHM of each small emitter S B The lowest excited singlet state S1 S Even higher energy.

[0109] In one embodiment, the above-mentioned relationships represented by formulas (5) and (6) apply to the materials contained in any one of at least one light-emitting layer B of an organic electroluminescent device according to the present invention. In one embodiment, the above-mentioned relationships represented by formulas (5) and (6) apply to the materials contained in the same light-emitting layer B of an organic electroluminescent device according to the present invention.

[0110] In a preferred embodiment of the present invention, the relationships represented by the following formulas (1) to (4) apply: E(T1 H )>E(T1 P ) (1) E(T1 P )>E(S1 S ) (2) E(T1 H )>E(S1 E ) (3) E(T1 E )>E(T1 P ) (4).

[0111] In one embodiment, the above-mentioned relationships represented by formulas (1) to (4) apply to the materials contained in any one of at least one light-emitting layer B of an organic electroluminescent device according to the present invention. In one embodiment, the above-mentioned relationships represented by formulas (1) to (4) apply to the materials contained in the same light-emitting layer B of an organic electroluminescent device according to the present invention.

[0112] In one embodiment of the present invention, each phosphorescent material P B The lowest excited triplet state T1 of P and each TADF material E B The lowest excited triplet state T1 of E The difference in energy between these two is less than 0.3 eV: E(T1 P )-E(T1 E )<0.3 eV, and E(T1 E )-E(T1 P )<0.3 eV.

[0113] In one embodiment of the present invention, at least one of the one or more light-emitting layers B contains at least one, preferably each, phosphorescent material P B The lowest excited triplet state T1 of P and at least one, preferably each, TADF material E B The lowest excited triplet state T1 of E The energy difference between them is less than 0.3 eV: E(T1 P )-E(T1 E )<0.3 eV, and E(T1 E )-E(T1 P )<0.3 eV.

[0114] In one embodiment of the present invention, in each of the one or more light-emitting layers B, at least one, preferably each phosphorescent material P B The lowest excited triplet state T1 of P and at least one, preferably each, TADF material E B The lowest excited triplet state T1 of E The energy difference between them is less than 0.3 eV: E(T1 P )-E(T1 E )<0.3 eV, and E(T1 E )-E(T1 P )<0.3 eV.

[0115] In one embodiment of the present invention, the relationship represented by the following formula (4) applies: E(T1 E )>E(T1P ) (4).

[0116] In one embodiment, the aforementioned relationship represented by formula (4) applies to the materials contained in at least one light-emitting layer B of the organic electroluminescent device according to the present invention. In one embodiment, the aforementioned relationship represented by formula (4) applies to the materials contained in the same light-emitting layer B of the organic electroluminescent device according to the present invention.

[0117] In a preferred embodiment of the present invention, at least one, preferably each, TADF material E B The lowest excited triplet state T1 E and at least one, preferably each, phosphorescent material P B The lowest excited triplet state T1 P The energy difference between E(T1 E )-E(T1 P )<0.2 eV.

[0118] In a preferred embodiment of the present invention, at least one of the one or more emitting layers B contains at least one, preferably each, TADF material E B The lowest excited triplet state T1 E and at least one, preferably each, phosphorescent material P B The lowest excited triplet state T1 P The energy difference between E(T1 E )-E(T1 P )<0.2 eV.

[0119] In a preferred embodiment of the present invention, in each of the one or more light-emitting layers B, at least one, preferably each TADF material E B The lowest excited triplet state T1 E and at least one, preferably each, phosphorescent material P B The lowest excited triplet state T1 of P The energy difference between E(T1 E )-E(T1 P )<0.2 eV.

[0120] In a preferred embodiment of the present invention, at least one, preferably each, phosphorescent material P B The lowest excited triplet state T1 of P and at least one, preferably each, small full width at half maximum (FWHM) emitter S B The lowest excited singlet state S1 S (Energy level E(S1 S The energy difference between E(T1 P )-E(S1 S )<0.3 eV.

[0121] In a preferred embodiment of the present invention, at least one of the one or more light-emitting layers B contains at least one, preferably each, phosphorescent material P B The lowest excited triplet state T1 of P and at least one, preferably each, small full width at half maximum (FWHM) emitter S B The lowest excited singlet state S1 S The energy difference between E(T1 P )-E(S1 S )<0.3 eV.

[0122] In a preferred embodiment of the present invention, in each of the one or more light-emitting layers B, at least one, preferably each, phosphorescent material P B The lowest excited triplet state T1 of P and at least one, preferably each, small full width at half maximum (FWHM) emitter S B The lowest excited singlet state S1 S The energy difference between E(T1 P )-E(S1 S )<0.3 eV.

[0123] In a preferred embodiment of the present invention, each phosphorescent material P B The lowest excited triplet state T1 of P and the small half-width (FWHM) emitter S B The lowest excited singlet state S1S (Energy level E(S1 S The energy difference between E(T1 P )-E(S1 S )<0.2 eV.

[0124] In a preferred embodiment of the present invention, at least one of the one or more light-emitting layers B contains at least one, preferably each, phosphorescent material P B The lowest excited triplet state T1 of P and at least one, preferably each, small full width at half maximum (FWHM) emitter S B The lowest excited singlet state S1 S The energy difference between E(T1 P )-E(S1 S )<0.2 eV.

[0125] In a preferred embodiment of the present invention, in each of the one or more light-emitting layers B, at least one, preferably each, phosphorescent material P B The lowest excited triplet state T1 of P and at least one, preferably each, small full width at half maximum (FWHM) emitter S B The lowest excited singlet state S1 S The energy difference between E(T1 P )-E(S1 S )<0.2 eV.

[0126] HOMO-LUMO energy In a preferred embodiment of the present invention, the following requirements are met: (i) Each host material H B is the energy E HOMO (H B ) with the highest occupied molecular orbital HOMO (H B ) (ii) each phosphorescent material P B is the energy E HOMO (P B ) with the highest occupied molecular orbital HOMO (P B ) (iii) Each small full width at half maximum (FWHM) emitter S B is the energy E HOMO (S B ) with the highest occupied molecular orbital HOMO(S B ) Here, the relationships expressed by the following equations (10) and (11) apply: E HOMO (P B )>E HOMO (H B ) (10) E HOMO (P B )>E HOMO (S B ) (11).

[0127] In one embodiment, the above-mentioned relationships represented by formulas (10) and (11) apply to the materials contained in any one of at least one light-emitting layer B of an organic electroluminescent device according to the present invention. In one embodiment, the above-mentioned relationships represented by formulas (10) and (11) apply to the materials contained in the same light-emitting layer B of an organic electroluminescent device according to the present invention.

[0128] In one embodiment of the present invention, the energy E HOMO (S B ) with small half-width (FWHM) emitters S B The highest occupied orbital HOMO(S B ) is the energy E HOMO (H B ) each host material H B The highest occupied molecular orbital HOMO(H B ) with even more energy: E HOMO (S B )>E HOMO (H B ).

[0129] In one embodiment of the present invention, at least one of the one or more light-emitting layers B has at least one, preferably each, energy E HOMO (S B) with a small full width at half maximum (FWHM) emitter S B The highest occupied orbital HOMO(S B ) is at least one, preferably each, energy E HOMO (H B ) a host material H B The highest occupied molecular orbital HOMO(H B ) with even more energy: E HOMO (S B )>E HOMO (H B ).

[0130] In one embodiment of the present invention, in each of at least one light-emitting layer B, at least one, preferably each, energy E HOMO (S B ) with a small full width at half maximum (FWHM) emitter S B The highest occupied orbital HOMO(S B ) is at least one, preferably each, energy E HOMO (H B ) a host material H B The highest occupied molecular orbital HOMO(H B ) with even more energy: E HOMO (S B )>E HOMO (H B ).

[0131] In one embodiment of the present invention, the energy E HOMO (S B ) with small half-width (FWHM) emitters S B The highest occupied orbital HOMO(S B ) is the energy E HOMO (E B ) for each TADF material E B The highest occupied molecular orbital HOMO (E B ) with even more energy: E HOMO (S B )>E HOMO (E B ).

[0132] In one embodiment of the present invention, at least one of the one or more light-emitting layers B has at least one, preferably each, energy E HOMO (S B ) with a small full width at half maximum (FWHM) emitter S B The highest occupied orbital HOMO(S B ) is at least one, preferably each, energy E HOMO (E B ) TADF material E B The highest occupied molecular orbital HOMO (E B ) with even more energy: E HOMO (S B )>E HOMO (E B ).

[0133] In one embodiment of the present invention, in each of at least one light-emitting layer B, at least one, preferably each, energy E HOMO (S B ) with a small full width at half maximum (FWHM) emitter S B The highest occupied orbital HOMO(S B ) is at least one, preferably each, energy E HOMO (E B ) TADF material E B The highest occupied molecular orbital HOMO (E B ) with even more energy: E HOMO (S B )>E HOMO (E B ).

[0134] In one embodiment of the present invention, at least one, preferably each, energy E HOMO (P B ) Phosphorescent material P B The highest occupied orbital HOMO(P B ) is at least one, preferably each, energy E HOMO (E B ) TADF material E BThe highest occupied molecular orbital HOMO (E B ) with even more energy: E HOMO (P B )>E HOMO (E B ).

[0135] In one embodiment of the present invention, at least one of the one or more light-emitting layers B has at least one, preferably each, energy E HOMO (P B ) Phosphorescent material P B The highest occupied orbital HOMO(P B ) is at least one, preferably each, energy E HOMO (E B ) TADF material E B The highest occupied molecular orbital HOMO (E B ) with even more energy: E HOMO (P B )>E HOMO (E B ).

[0136] In one embodiment of the present invention, in each of at least one light-emitting layer B, at least one, preferably each, energy E HOMO (P B ) Phosphorescent material P B The highest occupied orbital HOMO(P B ) is at least one, preferably each, energy E HOMO (E B ) TADF material E B The highest occupied molecular orbital HOMO (E B ) with even more energy: E HOMO (P B )>E HOMO (E B ).

[0137] In one embodiment of the present invention, at least one, preferably each, energy E HOMO (P B ) Phosphorescent material P BThe highest occupied orbital HOMO(P B ) is at least one, preferably each, energy E HOMO (H B ) a host material H B The highest occupied molecular orbital HOMO(H B ) with even more energy: E HOMO (P B )>E HOMO (H B ).

[0138] In one embodiment of the present invention, at least one of the one or more light-emitting layers B has at least one, preferably each, energy E HOMO (P B ) Phosphorescent material P B The highest occupied orbital HOMO(P B ) is at least one, preferably each, energy E HOMO (H B ) a host material H B The highest occupied molecular orbital HOMO(H B ) with even more energy: E HOMO (P B )>E HOMO (H B ).

[0139] In one embodiment of the present invention, in each of at least one light-emitting layer B, at least one, preferably each, energy E HOMO (P B ) Phosphorescent material P B The highest occupied orbital HOMO(P B ) is at least one, preferably each, energy E HOMO (H B ) a host material H B The highest occupied molecular orbital HOMO(H B ) with even more energy: E HOMO (P B )>E HOMO (H B ).

[0140] In one embodiment of the present invention, at least one, preferably each, energy E HOMO (P B ) Phosphorescent material P B The highest occupied orbital HOMO(P B ) is at least one, preferably each, energy E HOMO (S B ) with a small full width at half maximum (FWHM) emitter S B The highest occupied orbital HOMO(S B ) with even more energy: E HOMO (P B )>E HOMO (S B ).

[0141] In one embodiment of the present invention, at least one of the one or more light-emitting layers B has at least one, preferably each, energy E HOMO (P B ) Phosphorescent material P B The highest occupied orbital HOMO(P B ) is at least one, preferably each, energy E HOMO (S B ) with a small full width at half maximum (FWHM) emitter S B The highest occupied orbital HOMO(S B ) with even more energy: E HOMO (P B )>E HOMO (S B ).

[0142] In one embodiment of the present invention, in each of at least one light-emitting layer B, at least one, preferably each, energy E HOMO (P B ) Phosphorescent material P B The highest occupied orbital HOMO(P B ) is at least one, preferably each, energy E HOMO (S B ) with a small full width at half maximum (FWHM) emitter S BThe highest occupied orbital HOMO(S B ) with even more energy: E HOMO (P B )>E HOMO (S B ).

[0143] In one embodiment of the present invention, at least one, preferably each, energy E HOMO (P B ) Phosphorescent material P B The highest occupied orbital HOMO(P B ) and at least one, preferably each, energy E HOMO (S B ) with a small full width at half maximum (FWHM) emitter S B The highest occupied orbital HOMO(S B ) is less than 0.3 eV: E HOMO (P B )-E HOMO (S B )<0.3 eV.

[0144] In one embodiment of the present invention, at least one of the one or more light-emitting layers B has at least one, preferably each, energy E HOMO (P B ) Phosphorescent material P B The highest occupied orbital HOMO(P B ) and at least one, preferably each, energy E HOMO (S B ) with a small full width at half maximum (FWHM) emitter S B The highest occupied orbital HOMO(S B ) is less than 0.3 eV: E HOMO (P B )-E HOMO (S B )<0.3 eV.

[0145] In one embodiment of the present invention, in each of at least one light-emitting layer B, at least one, preferably each, energy EHOMO (P B ) Phosphorescent material P B The highest occupied orbital HOMO(P B ) and at least one, preferably each, energy E HOMO (S B ) with a small full width at half maximum (FWHM) emitter S B The highest occupied orbital HOMO(S B ) is less than 0.3 eV: E HOMO (P B )-E HOMO (S B )<0.3 eV.

[0146] In one embodiment of the present invention, the energy E HOMO (P B Each phosphorescent material P B The highest occupied orbital HOMO(P B ) and energy E HOMO (S B ) with small half-width (FWHM) emitters S B The highest occupied orbital HOMO(S B ) is less than 0.2 eV: E HOMO (P B )-E HOMO (S B )<0.2 eV.

[0147] In one embodiment of the present invention, at least one of the one or more light-emitting layers B has at least one, preferably each, energy E HOMO (P B ) Phosphorescent material P B The highest occupied orbital HOMO(P B ) and at least one, preferably each, energy E HOMO (S B ) with a small full width at half maximum (FWHM) emitter S B The highest occupied orbital HOMO(S B ) is less than 0.2 eV: E HOMO (P B)-E HOMO (S B )<0.2 eV.

[0148] In one embodiment of the present invention, in each of at least one light-emitting layer B, at least one, preferably each, energy E HOMO (P B ) Phosphorescent material P B The highest occupied orbital HOMO(P B ) and at least one, preferably each, energy E HOMO (S B ) with a small full width at half maximum (FWHM) emitter S B The highest occupied orbital HOMO(S B ) is less than 0.2 eV: E HOMO (P B )-E HOMO (S B )<0.2 eV.

[0149] In a preferred embodiment of the present invention, at least one, preferably each, energy E HOMO (P B ) Phosphorescent material P B The highest occupied orbital HOMO(P B ) and at least one, preferably each, energy E HOMO (S B ) with a small full width at half maximum (FWHM) emitter S B The highest occupied orbital HOMO(S B ) is greater than 0.0 eV and less than 0.3 eV: 0.0eV <E HOMO (P B )-E HOMO (S B )<0.3 eV.

[0150] In a preferred embodiment of the present invention, in at least one of the one or more light-emitting layers B, at least one, preferably each, energy E HOMO (P B ) Phosphorescent material P B The highest occupied orbital HOMO(PB ) and at least one, preferably each, energy E HOMO (S B ) with a small full width at half maximum (FWHM) emitter S B The highest occupied orbital HOMO(S B ) is greater than 0.0 eV and less than 0.3 eV: 0.0eV <E HOMO (P B )-E HOMO (S B )<0.3 eV.

[0151] In a preferred embodiment of the present invention, in each of the at least one light-emitting layer B, at least one, preferably each, energy E HOMO (P B ) Phosphorescent material P B The highest occupied orbital HOMO(P B ) and at least one, preferably each, energy E HOMO (S B ) with a small full width at half maximum (FWHM) emitter S B The highest occupied orbital HOMO(S B ) is greater than 0.0 eV and less than 0.3 eV: 0.0eV <E HOMO (P B )-E HOMO (S B )<0.3 eV.

[0152] In one embodiment of the present invention, at least one, preferably each, energy E HOMO (P B ) Phosphorescent material P B The highest occupied orbital HOMO(P B ) and at least one, preferably each, energy E HOMO (S B ) with a small full width at half maximum (FWHM) emitter S B The highest occupied orbital HOMO(S B ) is between 0.1 eV and 0.8 eV: 0.1 eV ≤ E HOMO (P B)-E HOMO (S B )≦0.8 eV.

[0153] In one embodiment of the present invention, at least one of the one or more light-emitting layers B has at least one, preferably each, energy E HOMO (P B ) Phosphorescent material P B The highest occupied orbital HOMO(P B ) and at least one, preferably each, energy E HOMO (S B ) with a small full width at half maximum (FWHM) emitter S B The highest occupied orbital HOMO(S B ) is between 0.1 eV and 0.8 eV: 0.1 eV ≤ E HOMO (P B )-E HOMO (S B )≦0.8 eV.

[0154] In one embodiment of the present invention, in each of at least one light-emitting layer B, at least one, preferably each, energy E HOMO (P B ) Phosphorescent material P B The highest occupied orbital HOMO(P B ) and at least one, preferably each, energy E HOMO (S B ) with a small full width at half maximum (FWHM) emitter S B The highest occupied orbital HOMO(S B ) is between 0.1 eV and 0.8 eV: 0.1 eV ≤ E HOMO (P B )-E HOMO (S B )≦0.8 eV.

[0155] In a preferred embodiment of the present invention, the following requirements are met: (i) Each host material H B is the energy E LUMO (H B) with the lowest unoccupied orbital LUMO(H B ) (ii) each phosphorescent material P B is the energy E LUMO (P B ) with the lowest unoccupied orbital LUMO (P B ) (iii) Each small full width at half maximum (FWHM) emitter S B is the energy E LUMO (S B ) with the lowest unoccupied orbital LUMO(S B ) (iv) Each thermally activated delayed fluorescence (TADF) material E B is the energy E LUMO (E B ) with the lowest unoccupied orbital LUMO (E B ) Here, the relationships expressed by the following equations (12) and (13) apply: E LUMO (E B ) <E LUMO (H B ) (12) E LUMO (E B ) <E LUMO (P B ) (13).

[0156] In one embodiment, the above-mentioned relationships represented by formulas (12) and (13) apply to the materials contained in at least one light-emitting layer B of an organic electroluminescent device according to the present invention. In one embodiment, the above-mentioned relationships represented by formulas (12) and (13) apply to the materials contained in the same light-emitting layer B of an organic electroluminescent device according to the present invention.

[0157] In one embodiment of the present invention, an electroluminescent device comprises an emissive layer B consisting of one or more sub-layers, where one or more sub-layers of the emissive layer B comprise: (i) Energy E LUMO (H B ) with the lowest unoccupied orbital LUMO(H B) a host material H B , (ii) Energy E LUMO (P B ) with the lowest unoccupied orbital LUMO (P B ) Phosphorescent material P B , (iii) Energy E LUMO (S B ) with the lowest unoccupied orbital LUMO(S B ) with a small full width at half maximum (FWHM) emitter S B , and (iv) Energy E LUMO (E B ) with the lowest unoccupied orbital LUMO (E B ) Thermally activated delayed fluorescence (TADF) material E B , Here, the relationships expressed by the following equations (12) to (14) apply: E LUMO (E B ) <E LUMO (H B ) (12) E LUMO (E B ) <E LUMO (P B ) (13) E LUMO (E B ) <E LUMO (S B ) (14).

[0158] In one embodiment, the above-mentioned relationships represented by formulas (12) to (14) apply to the materials contained in at least one light-emitting layer B of an organic electroluminescent device according to the present invention. In one embodiment, the above-mentioned relationships represented by formulas (12) to (14) apply to the materials contained in the same light-emitting layer B of an organic electroluminescent device according to the present invention.

[0159] In one embodiment of the present invention, the relationships represented by the following equations (10) to (13) apply: E HOMO (P B )>E HOMO (HB ) (10) E HOMO (P B )>E HOMO (S B ) (11) E LUMO (E B ) <E LUMO (H B ) (12) E LUMO (E B ) <E LUMO (P B ) (13).

[0160] In one embodiment, the above-mentioned relationships represented by formulas (10) to (13) apply to the materials contained in any one of at least one light-emitting layer B of an organic electroluminescent device according to the present invention. In one embodiment, the above-mentioned relationships represented by formulas (10) to (13) apply to the materials contained in the same light-emitting layer B of an organic electroluminescent device according to the present invention.

[0161] In one embodiment of the present invention, the relationships represented by the following equations (10) to (14) apply: E HOMO (P B )>E HOMO (H B ) (10) E HOMO (P B )>E HOMO (S B ) (11) E LUMO (E B ) <E LUMO (H B ) (12) E LUMO (E B ) <E LUMO (P B ) (13) E LUMO (E B ) <E LUMO (S B ) (14).

[0162] In one embodiment, the above-mentioned relationships represented by formulas (10) to (14) apply to the materials contained in any one of at least one light-emitting layer B of an organic electroluminescent device according to the present invention. In one embodiment, the above-mentioned relationships represented by formulas (10) to (14) apply to the materials contained in the same light-emitting layer B of an organic electroluminescent device according to the present invention.

[0163] In one embodiment of the present invention, at least one, preferably each, energy E LUMO (S B ) with a small full width at half maximum (FWHM) emitter S B The lowest unoccupied orbital LUMO(S B ) is at least one, preferably each, energy E LUMO (E B ) TADF material E B The lowest unoccupied orbital LUMO (E B ) with even more energy: E LUMO (S B )>E LUMO (E B ).

[0164] In one embodiment of the present invention, at least one of the one or more light-emitting layers B has at least one, preferably each, energy E LUMO (S B ) with a small full width at half maximum (FWHM) emitter S B The lowest unoccupied orbital LUMO(S B ) is at least one, preferably each, energy E LUMO (E B ) TADF material E B The lowest unoccupied orbital LUMO (E B ) with even more energy: E LUMO (S B )>E LUMO (E B ).

[0165] In one embodiment of the present invention, in each of at least one light-emitting layer B, at least one, preferably each, energy E LUMO (S B ) with a small full width at half maximum (FWHM) emitter S B The lowest unoccupied orbital LUMO(S B ) is at least one, preferably each, energy E LUMO (E B ) TADF material E B The lowest unoccupied orbital LUMO (E B ) with even more energy: E LUMO (S B )>E LUMO (E B ).

[0166] In one embodiment of the present invention, at least one, preferably each, energy E LUMO (S B ) with a small full width at half maximum (FWHM) emitter S B The lowest unoccupied orbital LUMO(S B ) and at least one, preferably each, energy E LUMO (E B ) TADF material E B The lowest unoccupied orbital LUMO (E B ) has an energy difference of less than 0.3 eV: E LUMO (S B )-E LUMO (E B )<0.3 eV.

[0167] In one embodiment of the present invention, at least one of the one or more light-emitting layers B has at least one, preferably each, energy E LUMO (S B ) with a small full width at half maximum (FWHM) emitter S B The lowest unoccupied orbital LUMO(S B ) and at least one, preferably each, energy E LUMO (E B ) TADF material E BThe lowest unoccupied orbital LUMO (E B ) has an energy difference of less than 0.3 eV: E LUMO (S B )-E LUMO (E B )<0.3 eV.

[0168] In one embodiment of the present invention, in each of at least one light-emitting layer B, at least one, preferably each, energy E LUMO (S B ) with a small full width at half maximum (FWHM) emitter S B The lowest unoccupied orbital LUMO(S B ) and at least one, preferably each, energy E LUMO (E B ) TADF material E B The lowest unoccupied orbital LUMO (E B ) has an energy difference of less than 0.3 eV: E LUMO (S B )-E LUMO (E B )<0.3 eV.

[0169] In one embodiment of the present invention, at least one, preferably each, energy E LUMO (S B ) with a small full width at half maximum (FWHM) emitter S B The lowest unoccupied orbital LUMO(S B ) and at least one, preferably each, energy E LUMO (E B ) TADF material E B The lowest unoccupied orbital LUMO (E B ) has an energy difference of less than 0.2 eV: E LUMO (S B )-E LUMO (E B )<0.2 eV.

[0170] In one embodiment of the present invention, at least one of the one or more light-emitting layers B has at least one, preferably each, energy E LUMO (S B ) with a small full width at half maximum (FWHM) emitter S B The lowest unoccupied orbital LUMO(S B ) and at least one, preferably each, energy E LUMO (E B ) TADF material E B The lowest unoccupied orbital LUMO (E B ) has an energy difference of less than 0.2 eV: E LUMO (S B )-E LUMO (E B )<0.2 eV.

[0171] In one embodiment of the present invention, in each of at least one light-emitting layer B, at least one, preferably each, energy E LUMO (S B ) with a small full width at half maximum (FWHM) emitter S B The lowest unoccupied orbital LUMO(S B ) and at least one, preferably each, energy E LUMO (E B ) TADF material E B The lowest unoccupied orbital LUMO (E B ) has an energy difference of less than 0.2 eV: E LUMO (S B )-E LUMO (E B )<0.2 eV.

[0172] In one embodiment of the present invention, at least one, preferably each, energy E LUMO (S B ) with a small full width at half maximum (FWHM) emitter S B The lowest unoccupied orbital LUMO(S B ) and at least one, preferably each, energy E LUMO (E B ) TADF material EB The lowest unoccupied orbital LUMO (E B ) is greater than 0.0 eV and less than 0.3 eV: 0.0eV <E LUMO (S B )-E LUMO (E B )<0.3 eV.

[0173] In one embodiment of the present invention, at least one of the one or more light-emitting layers B has at least one, preferably each, energy E LUMO (S B ) with a small full width at half maximum (FWHM) emitter S B The lowest unoccupied orbital LUMO(S B ) and at least one, preferably each, energy E LUMO (E B ) TADF material E B The lowest unoccupied orbital LUMO (E B ) is greater than 0.0 eV and less than 0.3 eV: 0.0eV <E LUMO (S B )-E LUMO (E B )<0.3 eV.

[0174] In one embodiment of the present invention, in each of at least one light-emitting layer B, at least one, preferably each, energy E LUMO (S B ) with a small full width at half maximum (FWHM) emitter S B The lowest unoccupied orbital LUMO(S B ) and at least one, preferably each, energy E LUMO (E B ) TADF material E B The lowest unoccupied orbital LUMO (E B ) is greater than 0.0 eV and less than 0.3 eV: 0.0eV <E LUMO (S B )-E LUMO (E B )<0.3 eV.

[0175] In one embodiment of the present invention, the energy E LUMO (P B Each phosphorescent material P B The lowest unoccupied orbital LUMO(P B ) is the energy E LUMO (E B ) for each TADF material E B The lowest unoccupied orbital LUMO (E B ) with even more energy: E LUMO (P B )>E LUMO (E B ).

[0176] In one embodiment of the present invention, at least one of the one or more light-emitting layers B has at least one, preferably each, energy E LUMO (P B ) Phosphorescent material P B The lowest unoccupied orbital LUMO(P B ) is at least one, preferably each, energy E LUMO (E B ) TADF material E B The lowest unoccupied orbital LUMO (E B ) with even more energy: E LUMO (P B )>E LUMO (E B ).

[0177] In one embodiment of the present invention, in each of at least one light-emitting layer B, at least one, preferably each, energy E LUMO (P B ) Phosphorescent material P B The lowest unoccupied orbital LUMO(P B ) is at least one, preferably each, energy E LUMO (E B ) TADF material E B The lowest unoccupied orbital LUMO (E B ) with even more energy: ELUMO (P B )>E LUMO (E B ).

[0178] In one embodiment of the present invention, at least one, preferably each, energy E LUMO (H B ) a host material H B The lowest unoccupied orbital LUMO(H B ) is at least one, preferably each, energy E LUMO (E B ) TADF material E B The lowest unoccupied orbital LUMO (E B ) with even more energy: E LUMO (H B )>E LUMO (E B ).

[0179] In one embodiment of the present invention, at least one of the one or more light-emitting layers B has at least one, preferably each, energy E LUMO (H B ) a host material H B The lowest unoccupied orbital LUMO(H B ) is at least one, preferably each, energy E LUMO (E B ) TADF material E B The lowest unoccupied orbital LUMO (E B ) with even more energy: E LUMO (H B )>E LUMO (E B ).

[0180] In one embodiment of the present invention, in each of at least one light-emitting layer B, at least one, preferably each, energy E LUMO (H B ) a host material H B The lowest unoccupied orbital LUMO(H B ) is at least one, preferably each, energy ELUMO (E B ) TADF material E B The lowest unoccupied orbital LUMO (E B ) with even more energy: E LUMO (H B )>E LUMO (E B ).

[0181] Maximum light emission relationship In one embodiment of the present invention, the relationships expressed in equations (16) and (17) apply: |E λmax (P B )-E λmax (S B )|<0.30eV (16) |E λmax (E B )-E λmax (S B )|<0.30 eV (17), This means that in the context of the present invention the phosphorescent material P is given in electron volts (eV). B Maximum luminous energy E λmax (P B ) and the small FWHM emitter S given in electron volts (eV) in the context of the present invention B Maximum luminous energy E λmax (S B ) is less than 0.30 eV. And, in the context of the present invention, the TADF material E given in electron volts (eV) B Maximum luminous energy E λmax (E B ) and the small FWHM emitter S given in electron volts (eV) in the context of the present invention B Maximum luminous energy E λmax (S B ) is less than 0.30 eV.

[0182] In one embodiment, the above-mentioned relationships represented by formulas (16) and (17) apply to the materials contained in at least one light-emitting layer B of an organic electroluminescent device according to the present invention. In one embodiment, the above-mentioned relationships represented by formulas (16) and (17) apply to the materials contained in the same light-emitting layer B of an organic electroluminescent device according to the present invention.

[0183] In an organic electroluminescent device comprising at least one light-emitting layer B consisting of one or more sub-layers, said one or more sub-layers being adjacent to one another and comprising as a whole: (i) at least one host material H B , (ii) Energy E λmax (P B ) with a maximum emission λ max (P B At least one phosphorescent material P B , (iii) Energy E λmax (S B ) with a maximum emission λ max (S B At least one small full width at half maximum (FWHM) emitter S B , where S B emits light having a full width at half maximum (FWHM) of 0.25 eV or less; and (iv) Energy E λmax (E B ) with a maximum emission λ max (E B At least one thermally activated delayed fluorescence (TADF) material E B , Here, one or more sub-layers located on the outer surface of the light-emitting layer B are made of phosphorescent material P B , Small full width at half maximum (FWHM) emitter S B , and TADF material E B and wherein the relationships expressed by the following formulas (16) and (17) apply: |E λmax (P B )-E λmax (SB )|<0.30eV (16) |E λmax (E B )-E λmax (S B )|<0.30 eV (17).

[0184] In a preferred embodiment of the present invention, the relationships expressed by equations (18) and (19) apply: |E λmax (P B )-E λmax (S B )|<0.20eV (18) |E λmax (E B )-E λmax (S B )|<0.20 eV (19), This means that in the context of the present invention the phosphorescent material P is given in electron volts (eV). B Maximum luminous energy E λmax (P B ) and the small FWHM emitter S given in electron volts (eV) in the context of the present invention B Maximum luminous energy E λmax (S B ) is less than 0.20 eV. And, in the context of the present invention, the TADF material E given in electron volts (eV) B Maximum luminous energy E λmax (E B ) and the small FWHM emitter S given in electron volts (eV) in the context of the present invention B Maximum luminous energy E λmax (S B ) is less than 0.20 eV.

[0185] In one embodiment, the above-mentioned relationships represented by formulas (18) and (19) apply to the materials contained in at least one light-emitting layer B of an organic electroluminescent device according to the present invention. In one embodiment, the above-mentioned relationships represented by formulas (18) and (19) apply to the materials contained in the same light-emitting layer B of an organic electroluminescent device according to the present invention.

[0186] One embodiment of the present invention relates to an organic electroluminescence device, (ii) at least one phosphorescent material P B is the energy E λmax (P B ) with a maximum emission λ max (P B ) (iii) at least one small full width at half maximum (FWHM) emitter S B is the energy E λmax (S B ) with a maximum emission λ max (S B ), where S B emits light having a half-width of 0.25 eV or less, (iv) at least one thermally activated delayed fluorescent (TADF) material E B is the energy E λmax (E B ) with a maximum emission λ max (E B ) where (18) and (19) apply: |E λmax (P B )-E λmax (S B )|<0.20eV (18) |E λmax (E B )-E λmax (S B )|<0.20 eV (19).

[0187] In a more preferred embodiment of the present invention, the relationships represented by equations (20) and (21) apply: |E λmax (PB )-E λmax (S B )|<0.10eV (20) |E λmax (E B )-E λmax (S B )|<0.10 eV (21), This means that in the context of the present invention the phosphorescent material P is given in electron volts (eV). B Maximum luminous energy E λmax (P B ) and the small FWHM emitter S given in electron volts (eV) in the context of the present invention B Maximum luminous energy E λmax (S B ) is less than 0.10 eV. And, in the context of the present invention, the TADF material E given in electron volts (eV) B Maximum luminous energy E λmax (E B ) and the small FWHM emitter S given in electron volts (eV) in the context of the present invention B Maximum luminous energy E λmax (S B ) is less than 0.10 eV.

[0188] In one embodiment, the above-mentioned relationships represented by formulas (20) and (21) apply to the materials contained in at least one light-emitting layer B of an organic electroluminescent device according to the present invention. In one embodiment, the above-mentioned relationships represented by formulas (20) and (21) apply to the materials contained in the same light-emitting layer B of an organic electroluminescent device according to the present invention.

[0189] In one embodiment of the present invention, the relationship expressed in equation (22) applies: E λmax (P B )>E λmax (S B ) (twenty two), This is the phosphorescent material P given in electron volts (eV) in the context of the present invention. B Maximum luminous energy Eλmax (P B ) is the small FWHM emitter S given in electron volts (eV) in the context of the present invention B Maximum luminous energy E λmax (S B ) higher.

[0190] In one embodiment, the above-mentioned relationship represented by formula (22) applies to the materials contained in at least one light-emitting layer B of an organic electroluminescent device according to the present invention. In one embodiment, the above-mentioned relationship represented by formula (22) applies to the materials contained in the same light-emitting layer B of an organic electroluminescent device according to the present invention.

[0191] In one embodiment of the present invention, the relationship represented by formula (22-a) applies: E λmax (E B )>E λmax (S B ) (22-a), This is the TADF material E given in electron volts (eV) in the context of the present invention. B Maximum luminous energy E λmax (E B ) is the small FWHM emitter S given in electron volts (eV) in the context of the present invention B Maximum luminous energy E λmax (S B ) higher.

[0192] In one embodiment, the above-mentioned relationship represented by formula (22-a) applies to the materials contained in at least one light-emitting layer B of the organic electroluminescent device according to the present invention. In one embodiment, the above-mentioned relationship represented by formula (22-a) applies to the materials contained in the same light-emitting layer B of the organic electroluminescent device according to the present invention.

[0193] Device color and performance A further embodiment of the present invention relates to an electroluminescent device (e.g., an OLED) that emits light with a well-defined color point. According to the present invention, the electroluminescent device (e.g., an OLED) emits light with a narrow emission band (small full width at half maximum (FWHM)). In a preferred embodiment, the electroluminescent device (e.g., an OLED) according to the present invention emits light with a FWHM of the main emission peak of less than 0.25 eV, preferably less than 0.20 eV, more preferably less than 0.15 eV, or even less than 0.13 eV.

[0194] A further embodiment of the invention is 2 The present invention relates to an electroluminescent device (e.g., an OLED) that exhibits an external quantum efficiency of greater than 10%, preferably greater than 13%, more preferably greater than 15%, even more preferably greater than 18%, or even more preferably greater than 20% at 100 nm (nits) and has a maximum emission at 500 nm to 560 nm.

[0195] A further embodiment of the invention is 2 The present invention relates to an electroluminescent device (e.g., an OLED) that exhibits an external quantum efficiency of more than 10%, preferably more than 13%, more preferably more than 15%, even more preferably more than 18%, or even more than 20% and has a maximum emission at 510 nm to 550 nm.

[0196] A further embodiment of the invention is 2 The present invention relates to an electroluminescent device (e.g., an OLED) that exhibits an external quantum efficiency of more than 10%, preferably more than 13%, more preferably more than 15%, even more preferably more than 18%, or even more than 20% and has a maximum emission at 515 nm to 540 nm.

[0197] In a preferred embodiment, the electroluminescent device (e.g., an OLED) is driven at a constant current density J 0 =15mA / cm 2In the present invention, the LT95 value is more than 100 h, preferably more than 200 h, more preferably more than 400 h, even more preferably more than 750 h, or even more preferably more than 1000 h.

[0198] A further embodiment of the present invention relates to an electroluminescent device (e.g., an OLED) that emits light with a well-defined color point. According to the present invention, the electroluminescent device (e.g., an OLED) emits light with a narrow emission band (small full width at half maximum (FWHM)). In a preferred embodiment, the electroluminescent device (e.g., an OLED) according to the present invention emits light with a FWHM of the main emission peak of less than 0.25 eV, preferably less than 0.20 eV, more preferably less than 0.15 eV, or even less than 0.13 eV.

[0199] Further embodiments of the present invention relate to electroluminescent devices (e.g., OLEDs) that emit light having CIEx and CIEy color coordinates close to the CIEx (=0.170) and CIEy (=0.797) color coordinates of primary green (CIEx=0.170 and CIEy=0.797) as defined by ITU-R Recommendation BT.2020 (Rec.2020), which are suitable for use in UHD (Ultra High Definition) displays, e.g., UHD-TVs. In this paragraph, the term "close" refers to the range of CIEx and CIEy coordinates provided at the end of this paragraph. While in commercial applications, a top light-emitting device (where the top electrode is transparent) is typically used, the test device used throughout the present invention shows a bottom light-emitting device (where the bottom electrode and substrate are transparent). Thus, a further aspect of the present invention relates to an electroluminescent device (e.g. an OLED) whose emission exhibits CIEx colour coordinates of 0.15 to 0.45, preferably 0.15 to 0.35, more preferably 0.15 to 0.30, even more preferably 0.15 to 0.25 or very preferably 0.15 to 0.20, and / or CIEy colour coordinates of 0.60 to 0.92, preferably 0.65 to 0.90, more preferably 0.70 to 0.88, even more preferably 0.75 to 0.86 or very preferably 0.79 to 0.84.

[0200] Further embodiments of the present invention relate to OLEDs that emit light with CIEx and CIEy color coordinates close to the CIEx(=0.265) and CIEy(=0.65) color coordinates of primary green (CIEx=0.265 and CIEy=0.65) as defined by DCIP3. The term "close" in this paragraph refers to the range of CIEx and CIEy coordinates provided at the end of this paragraph. While in commercial applications, a top light-emitting element (top electrode is transparent) is typically used, the test element used throughout the present invention shows a bottom light-emitting element (bottom electrode and substrate are transparent). Thus, a further aspect of the present invention relates to an OLED whose bottom emission exhibits CIEx colour coordinates of 0.2 to 0.45, preferably 0.2 to 0.35, more preferably 0.2 to 0.30, even more preferably 0.24 to 0.28 or very preferably 0.25 to 0.27, and / or CIEy colour coordinates of 0.60 to 0.9, preferably 0.6 to 0.8, more preferably 0.60 to 0.70, even more preferably 0.62 to 0.68 or very preferably 0.64 to 0.66.

[0201] A further embodiment of the invention is 2 The present invention relates to an electroluminescent device (e.g., an OLED) that exhibits an external quantum efficiency of more than 10%, preferably more than 13%, more preferably more than 15%, even more preferably more than 18%, or even more than 20% and has a maximum emission at 420 nm to 500 nm.

[0202] A further embodiment of the invention is 2 The present invention relates to an electroluminescent device (e.g., an OLED) that exhibits an external quantum efficiency of more than 10%, preferably more than 13%, more preferably more than 15%, even more preferably more than 18%, or even more than 20% and has a maximum emission at 440 nm to 480 nm.

[0203] A further embodiment of the invention is 2The present invention relates to an electroluminescent device (e.g., an OLED) that exhibits an external quantum efficiency of more than 10%, preferably more than 13%, more preferably more than 15%, even more preferably more than 18%, or even more than 20% and has a maximum emission at 450 nm to 470 nm.

[0204] A further embodiment of the invention is 2 and / or an external quantum efficiency of more than 10%, preferably more than 13%, more preferably more than 15%, even more preferably more than 18%, or even more than 20%; and / or an emission maximum between 420 nm and 500 nm, preferably between 430 nm and 490 nm, more preferably between 440 nm and 480 nm, even more preferably between 450 nm and 470 nm; and / or an emission maximum of less than 500 cd / m 2 In the present invention, the present invention relates to electroluminescent devices (eg, OLEDs) exhibiting LT80 values ​​of more than 100 h, preferably more than 200 h, more preferably more than 400 h, even more preferably more than 750 h, or even more preferably more than 1000 h.

[0205] A further embodiment of the present invention relates to an electroluminescent device (e.g., an OLED) that emits light with a well-defined color point. According to the present invention, the electroluminescent device (e.g., an OLED) emits light with a narrow emission band (small full width at half maximum (FWHM)). In a preferred embodiment, the electroluminescent device (e.g., an OLED) according to the present invention emits light with a FWHM of the main emission peak of less than 0.25 eV, preferably less than 0.20 eV, more preferably less than 0.15 eV, or even less than 0.13 eV.

[0206] A further aspect of the present invention relates to an OLED emitting light having CIEx and CIEy color coordinates close to the CIEx (=0.131) and CIEy (=0.046) color coordinates of primary blue (CIEx=0.131 and CIEy=0.046) as defined by ITU-R Recommendation BT.2020 (Rec.2020), which is suitable for use in UHD displays, such as UHD-TVs. While in commercial applications a top light-emitting element (wherein the top electrode is transparent) is typically used, the test elements used throughout the present invention show a bottom light-emitting element (wherein the bottom electrode and substrate are transparent). The CIEy color coordinates of the blue element decrease by up to two times when changing from the bottom light-emitting element to the top light-emitting element, but the CIEx remains almost unchanged (Okinaka et al., Society for Information Display International Symposium Digest of Technical Papers, 2015, 46(1): 312-313, DOI:10.1002 / sdtp.10480). Thus, a further aspect of the present invention relates to an OLED whose emission exhibits CIEx colour coordinates of 0.02 to 0.30, preferably 0.03 to 0.25, more preferably 0.05 to 0.20, even more preferably 0.08 to 0.18 or very preferably 0.10 to 0.15, and / or CIEy colour coordinates of 0.00 to 0.45, preferably 0.01 to 0.30, more preferably 0.02 to 0.20, even more preferably 0.03 to 0.15 or very preferably 0.04 to 0.10.

[0207] A further aspect of the present invention is 2 and / or an external quantum efficiency of greater than 8%, preferably greater than 10%, more preferably greater than 13%, even more preferably greater than 15%, or even greater than 20%; and / or an emission maximum between 590 nm and 690 nm, preferably between 610 nm and 665 nm, more preferably between 620 nm and 640 nm; and / or an emission maximum of 500 cd / m 2The present invention relates to electroluminescent devices (e.g., OLEDs) exhibiting LT80 values ​​of greater than 100 h, preferably greater than 200 h, more preferably greater than 400 h, even more preferably greater than 750 h, or even more preferably greater than 1000 h. Thus, a further aspect of the present invention relates to OLEDs whose emission exhibits a CIEy color coordinate of greater than 0.25, preferably greater than 0.27, more preferably greater than 0.29, and even more preferably greater than 0.30.

[0208] Further embodiments of the present invention relate to electroluminescent devices (e.g., OLEDs) that emit light having CIEx and CIEy color coordinates close to the CIEx (=0.708) and CIEy (=0.292) color coordinates of primary red (CIEx=0.708 and CIEy=0.292) as defined by ITU-R Recommendation BT.2020 (Rec.2020), which are suitable for use in UHD displays, e.g., UHD-TVs. The term "close" in this paragraph refers to the range of CIEx and CIEy coordinates provided at the end of this paragraph. While in commercial applications, typically a top light-emitting device (where the top electrode is transparent) is used, the test device used throughout the present invention shows a bottom light-emitting device (where the bottom electrode and substrate are transparent). Thus, a further aspect of the present invention relates to an OLED whose emission exhibits CIEx colour coordinates of 0.60 to 0.88, preferably 0.61 to 0.83, more preferably 0.63 to 0.78, even more preferably 0.66 to 0.76 or very preferably 0.68 to 0.73, and / or CIEy colour coordinates of 0.25 to 0.70, preferably 0.26 to 0.55, more preferably 0.27 to 0.45, even more preferably 0.28 to 0.40 or very preferably 0.29 to 0.35.

[0209] Thus, a further aspect of the present invention is 2and / or an electroluminescent device (e.g., an OLED) exhibiting an external quantum efficiency of more than 10%, preferably more than 13%, more preferably more than 15%, even more preferably more than 17%, or even more than 20%; and / or an emission maximum at 590 nm to 690 nm, preferably 610 nm to 665 nm, more preferably 620 nm to 640 nm.

[0210] One of the purposes of interest for organic electroluminescent devices is the generation of light. Thus, the present invention also relates to a method of generating light in a desired wavelength range, comprising providing an organic electroluminescent device according to any of the present invention.

[0211] Thus, a further aspect of the present invention relates to a method for generating light in a desired wavelength range, comprising the steps of: (i) providing an organic electroluminescent device according to the present invention; and (ii) applying a current to the organic electroluminescent device.

[0212] Further aspects of the invention relate to a method for producing an organic electroluminescent device by assembling the aforementioned elements.The invention also relates to a method for producing green light, in particular by using said organic electroluminescent device.

[0213] A further aspect of the present invention relates to an organic electroluminescent device in which at least one, preferably exactly one, of the relationships represented by the following formulae (23) to (25) is applied to the materials contained in the same light-emitting layer B: 440nm<λ max (S B )<470nm (23) 510nm<λ max (S B )<550nm (24) 610nm<λ max (S B )<665nm (25), Here, λ max(S B ) includes at least one, and preferably each, small FWHM emitter S B is the maximum emission of light at 100 nm and is given in nanometers (nm).

[0214] In one embodiment of the present invention, at least one, preferably exactly one, of the relationships represented by the following formulas (23) to (25) applies to the materials contained in any one of the at least one light-emitting layer B of the organic electroluminescent device according to the present invention.

[0215] A further aspect of the invention relates to a method of generating light comprising the steps of: (i) providing an organic electroluminescent device according to the present invention; and (ii) applying a current to the organic electroluminescent device.

[0216] A further aspect of the invention relates to a method of generating light comprising the steps of: (i) providing an organic electroluminescent device according to the present invention; and (ii) applying a current to the organic electroluminescent device; wherein the method is for generating light in a wavelength range selected from one of the following wavelength ranges:

[0217] (i) 510 nm to 550 nm, or (ii) 440 nm to 470 nm, or (iii) 610 nm to 665 nm.

[0218] Those skilled in the art will appreciate that at least one TADF material E B and at least one phosphorescent material P B It is understood that the at least one TADF material E (see below) can be used as an emitter in an organic electroluminescent device. However, preferably, in an organic electroluminescent device according to the invention, the at least one TADF material E B and said at least one phosphorescent material PB The primary function of the organic electroluminescent device S is not to emit light. In a preferred embodiment, upon application of a voltage (and current), the organic electroluminescent device according to the present invention emits light, where the emission is mainly (i.e., more than 50%, preferably more than 60%, more preferably more than 70%, even more preferably more than 80%, or even more preferably more than 90%) from at least one small FWHM emitter S. B As a result, the organic electroluminescent device according to the present invention preferably exhibits a narrow emission represented by a small FWHM of the main emission peak of less than 0.25 eV, more preferably less than 0.20 eV, even more preferably less than 0.15 eV, or even more preferably less than 0.13 eV.

[0219] In a preferred embodiment of the present invention, the relationship represented by the following formula (26) applies:

[0220]

number

[0221] Where: FWHM D means the full width at half maximum (FWHM) in electron volts (eV) of the main emission peak of the organic electroluminescent device according to the present invention, FWHM SB is the full width D One or more host materials H used in the light-emitting layer (EML) of an organic electroluminescent device having a FWHM of B Smaller FWHM emitter S than 1 B The photoluminescence spectrum (fluorescence spectrum measured at room temperature, i.e., (approximately) 20° C.) of the spin-coated film of SB The spin-coated film in which the FWHM is determined is preferably made of the same small FWHM emitter or emitter S in the same weight ratio as the light-emitting layer B of the organic electroluminescent device. B Includes.

[0222] For example, the light-emitting layer B contains two small FWHM emitters S each having a concentration of 1% by weight. B When the spin-coated film contains two small FWHM emitters S B In the exemplary case, the matrix material of the spin-coated film will be 98% by weight of the spin-coated film. The matrix material of such a spin-coated film is the host material H contained in the light-emitting layer B of the organic electroluminescence device. B In the above example, the light-emitting layer B contains a single host material H B In the above example, however, the light-emitting layer B may contain two host materials H B When the matrix material of the spin-coated film contains two small FWHM emitters S, one having a content of 60% by weight and the other having a content of 20% by weight (i.e., a ratio of 3:1), B % by weight of each of the two host materials H B It is a 3:1 mixture of

[0223] When the organic electroluminescent device according to the present invention includes more than one light-emitting layer B, the relationship represented by the above formula (26) preferably applies to all light-emitting layers B included in the device.

[0224] In one embodiment, the organic electroluminescence device according to the present invention has at least one light-emitting layer B having the above-mentioned FWHM D :FWHM SB is less than or equal to 1.50, preferably less than or equal to 1.40, more preferably less than or equal to 1.30, even more preferably less than or equal to 1.20, or even more preferably less than or equal to 1.10.

[0225] In one embodiment, for each light-emitting layer B of the organic electroluminescent device according to the present invention,D :FWHM SB is less than or equal to 1.50, preferably less than or equal to 1.40, more preferably less than or equal to 1.30, even more preferably less than or equal to 1.20, or even more preferably less than or equal to 1.10.

[0226] In the context of the present invention, a small FWHM emitter S B It should be noted that for the selection of fluorescent emitters for use as , the FWHM values ​​are determined as described in the subchapter below (simply, from spin-coated films of the respective emitters in poly(methyl methacrylate) PMMA, preferably with a concentration of 1-5 wt. %, in particular 2 wt. %, or from solutions, see below). Namely, for the exemplary small FWHM emitters S shown in Table 1S, B is taken as the FWHM value in the context of equation (26) and the related preferred embodiments of the present invention. SB Not understood as a value.

[0227] The examples and claims further illustrate the invention.

[0228] Host material H B According to the present invention, any one or more host materials H contained in at least one optional light-emitting layer B B is a p-host H that exhibits high hole mobility. P , n-host H showing high electron mobility N or a bipolar host material H that exhibits both high hole and high electron mobility BP It is.

[0229] In the context of the present invention, n-hosts exhibiting high electron mobility preferably have an electron mobility of −2.50 eV or less (E LUMO (H N )≦−2.50 eV), more preferably, E LUMO (H N )≦−2.60 eV, even more preferably, E LUMO (H N )≦−2.65 eV, more preferably E LUMO (HN ) ≦-2.70 eV LUMO energy E LUMO (H N ) The LUMO is the lowest unoccupied molecular orbital. The energy of the LUMO is determined as described in the subchapter below.

[0230] In the context of the present invention, a p-host exhibiting high hole mobility preferably has an E HOMO (H P ) ≧−6.30 eV), more preferably, E HOMO (H P ) ≧−5.90 eV, even more preferably E HOMO (H P ) ≧−5.70 eV, more preferably E HOMO (H P ) ≥ -5.40 eV, or, severely, E HOMO (H P ) ≧-2.60 eV HOMO energy E HOMO (H P ) The HOMO is the highest occupied molecular orbital. The energy of the HOMO is determined as described in the subchapter that follows.

[0231] In one embodiment of the present invention, each host material H B is -6.30 eV or more (E HOMO (H P ) ≧−6.30 eV), preferably E HOMO (H P ) ≧−5.90 eV, more preferably, E HOMO (H P ) ≧−5.70 eV, even more preferably E HOMO (H P ) ≧-5.40 eV HOMO energy E HOMO (H P ) with p-host H P The HOMO is the highest occupied molecular orbital. The energy of the HOMO is determined as described in the subchapter below.

[0232] In one embodiment of the present invention, at least one, and preferably each, p-host HP is the HOMO energy E smaller than -5.60 eV HOMO (H P ).

[0233] In one embodiment of the present invention, an organic electroluminescent device is provided that comprises at least one light-emitting layer B consisting of one or more sub-layers, where the one or more sub-layers are adjacent to one another and collectively comprise: (i) The lowest excited singlet state energy level E(S1 H ) and the lowest excited triplet state energy level E(T1 H At least one host material H B , (ii) The lowest excited singlet state energy level E(S1 P ) and the lowest excited triplet state energy level E(T1 P At least one phosphorescent material P B , (iii) The lowest excited singlet state energy level E(S1 S ) and the lowest excited triplet state energy level E(T1 S At least one small full width at half maximum (FWHM) emitter S B , where S B emits light having a full width at half maximum (FWHM) of 0.25 eV or less, and selectively (iv) The lowest excited singlet state energy level E(S1 E ) and the lowest excited triplet state energy level E(T1 E At least one thermally activated delayed fluorescence (TADF) material E B , One or more sublayers located on the outer surface of the light-emitting layer B are made of phosphorescent material P B , Small full width at half maximum (FWHM) emitter S B , and TADF material E B at least one (emitter) material selected from the group consisting of where at least one host material H B is an energy E smaller than -5.60 eV HOMO (H B ) with the highest occupied molecular orbital HOMO (HB ) and preferably each host material H B is an energy E smaller than -5.60 eV HOMO (H B ) with the highest occupied molecular orbital HOMO (H B ).

[0234] In the context of the present invention, a bipolar host exhibiting high electron mobility preferably has an electron mobility of −2.50 eV or less (E LUMO (H BP )≦−2.50 eV), more preferably, E LUMO (H BP )≦−2.60 eV, even more preferably, E LUMO (H BP )≦−2.65 eV, more preferably E LUMO (H BP ) ≦-2.70 eV LUMO energy E LUMO (H BP ) The LUMO is the lowest unoccupied molecular orbital. The energy of the LUMO is determined as described in the subchapter below.

[0235] In the context of the present invention, a bipolar host exhibiting high hole mobility preferably has an E HOMO (H BP ) ≧−6.30 eV), more preferably, E HOMO (H BP ) ≧−5.90 eV, even more preferably E HOMO (H BP ) ≧−5.70 eV, more preferably E HOMO (H BP ) ≧-5.40 eV HOMO energy E HOMO (H BP ) The HOMO is the highest occupied molecular orbital. The energy of the HOMO is determined as described in the subchapter that follows.

[0236] In one embodiment of the present invention, the bipolar host material H BP , preferably each dipolar host material H BP meets both of the following requirements: (i) -2.50eV or less (E LUMO (H BP )≦−2.50 eV), preferably E LUMO (H BP )≦−2.60 eV, more preferably, E LUMO (H BP )≦−2.65 eV, even more preferably, E LUMO (H BP ) ≦-2.70 eV LUMO energy E LUMO (H BP ) The LUMO is the lowest unoccupied molecular orbital. The energy of the LUMO is determined as described in the subchapter below. (ii) -6.30eV or more (E HOMO (H BP ) ≧−6.30 eV), preferably E HOMO (H BP ) ≧−5.90 eV, more preferably, E HOMO (H BP ) ≧−5.70 eV, even more preferably E HOMO (H BP ) ≧-5.40 eV HOMO energy E HOMO (H BP ) The HOMO is the highest occupied molecular orbital. The energy of the HOMO is determined as described in the subchapter that follows.

[0237] A person skilled in the art knows what materials are suitable host materials for use in the organic electroluminescent device according to the present invention. See the following examples: Y.Tao, C.Yang, J.Quin, Chemical Society Reviews 2011, 40, 2943, DOI: 10.1039 / C0CS00160K; KSYook, JYLee, The Chemical Record 2015, 16(1), 159, DOI: 10.1002 / tcr.201500221; T.Chatterjee, K.-T.Wong, Advanced Optical Materials 2018, 7(1), 1800565, DOI: 10.1002 / adom.201800565; Q.Wang, Q.-S.Tian, ​​Y.-L.Zhang, X.Tang, L.-S.Liao, Journal of Materials Chemistry C2019, 7, 11329, DOI: 10.1039 / C9TC03092A.

[0238] Also, for example, US2006006365(A1), US2006208221(A1), US2005069729(A1), EP1205527(A1), US2009302752(A1), US20090134784(A1), US2009302742(A1), US2010187977(A 1), US2010187977(A1), US2012068170(A1), US2012097899(A1), US2006121308(A1) ), US2006121308(A1), US2009167166(A1), US2007176147(A1), US2015322091(A1), US2011105778(A1), US2011201778(A1), US2011121274(A1), US2009302742(A1), US2010187977(A1), US2010244009(A1), US2009136779(A1), EP2182040(A2), US2012202997(A1), US2019393424(A1), US2019393425(A1), US2020168819(A1), US2020079762(A1), and US2012292576(A1) disclose host materials that can be used in the organic electroluminescent device according to the present invention. It is understood that this does not mean that the present invention is limited to organic electroluminescent devices containing the host materials disclosed in the cited references. Also, any host material used in the prior art can be considered as a suitable host material H in the context of the present invention. B It is understood that.

[0239] In one embodiment of the present invention, each light-emitting layer B of the organic electroluminescent device according to the present invention comprises one or more p-hosts H P In one embodiment of the present invention, each light-emitting layer B of the organic electroluminescent device according to the present invention contains only a single host material, which is a p-host H P It is.

[0240] In one embodiment of the present invention, each light-emitting layer B of the organic electroluminescent device according to the present invention comprises one or more n-hosts H N In another embodiment of the present invention, each light-emitting layer B of the organic electroluminescent device according to the present invention comprises only a single host material, which is an n-host H N It is.

[0241] In one embodiment of the present invention, each light-emitting layer B of an organic electroluminescent device according to the present invention contains one or more bipolar hosts H BP In one embodiment of the present invention, each light-emitting layer B of the organic electroluminescent device according to the present invention comprises only a single host material, which is a bipolar host H BP It is.

[0242] In another embodiment of the present invention, at least one light-emitting layer B of the organic electroluminescent device according to the present invention comprises at least two different host materials H B In this case, one or more host materials H B are both p-host H P or both are n-host H N or both are bipolar host H BP However, it may be a combination of these.

[0243] If the organic electroluminescent device according to the invention comprises more than one emitting layer B, any one of them may be, independently of one or more other emitting layers B, composed of one host material H to which the above definition applies. B , or more than one host material H B It is also understood that the different light-emitting layers B comprised in an organic electroluminescent device according to the present invention do not necessarily all comprise the same materials, or even the same materials in the same concentrations.

[0244] If the light-emitting layer B of the organic electroluminescent device according to the invention consists of more than one sub-layer, any one of them may contain, independently of one or more other sub-layers, one host material H to which the above definition applies. B , or more than one host material H B It is also understood that the different sub-layers of the light-emitting layer B contained in the organic electroluminescent device according to the present invention do not necessarily all contain the same materials, or even the same materials in the same concentrations.

[0245] When contained in the same light-emitting layer B of the organic electroluminescent device according to the present invention, at least one p-host H P and at least one n-host H N can selectively form exciplexes. Those skilled in the art will appreciate that H P and H N A method for selecting pairs of H P and H N Selection criteria including the HOMO and / or LUMO energy requirements of the p-host material H P The highest occupied molecular orbital (HOMO) of the n-host material H N The HOMO of the p-host material is at least 0.20 eV higher than that of the p-host material H P The lowest unoccupied molecular orbital (LUMO) of the n-host material H N The LUMO of is at least 0.20 eV higher in energy.

[0246] In a preferred embodiment of the present invention, at least one host material H B (For example, H P , H N and / or H BP ) is an organic host material, which means in the context of the present invention that it does not contain any transition metal. In a preferred embodiment of the present invention, all host materials H B (H P , H Nand / or H BP ) are organic host materials, which means in the context of the present invention that they do not contain any transition metals. Preferably, at least one host material H B , and more preferably, all the host materials H B (H P , H N and / or H BP ) is composed primarily of the elements hydrogen (H), carbon (C) and nitrogen (N), but may also contain, for example, oxygen (O), boron (B), silicon (Si), fluorine (F) and bromine (Br).

[0247] In one embodiment of the present invention, each host material H B is p-host H P It is.

[0248] In a preferred embodiment of the present invention, a p-host H P Contains or consists of: -Chemical formula H P -I, H P -II, H P -III, H P -IV, H P -V, H P -VI, H P -VII, H P -VIII, H P -IX and H P a first chemical moiety that comprises or consists of a structure according to any one of the following:

[0249] JPEG2025510014000002.jpg47170H P -IH P -IIH P -IIIH P -IV JPEG2025510014000003.jpg46170H P -VH P -VIH P-VII JPEG2025510014000004.jpg25170H P -VIII H P -IXH P -X

[0250] - each with the chemical formula H P -XI, H P -XII, H P -XIII, H P -XIV, H P -XV, H P -XVI, H P -XVII, H P -XVIII and H P -XIX,

[0251] JPEG2025510014000005.jpg24170H P -XI H P -XIIH P -XIII JPEG2025510014000006.jpg42170H P -XIV H P -XVH P -XVI JPEG2025510014000007.jpg43170H P -XVII H P -XVIII H P -XIX

[0252] Here, the p-host material H P is linked to a first chemical moiety via a single bond represented by a dashed line in said formula; Where: Z 1 are, in each case independently of one another, a direct bond, C(R II ) 2 , C=C(R II ) 2 , C=O, C=NR II , N.R. II , O, Si(RII ) 2 , S, S(O) and S(O) 2 is selected from the group consisting of R I are, in each occurrence, independently of each other, a single bond attachment site linking the first chemical moiety to the second chemical moiety or are selected from the group consisting of: Hydrogen, deuterium, Me, i Pr, t Bu, and Me, i Pr, t Ph optionally substituted with one or more substituents independently selected from the group consisting of Bu and Ph; Here, at least one R I is a single bond attachment site linking the first chemical moiety to the second chemical moiety; R II are, in each occurrence, independently selected from the group consisting of: Hydrogen, deuterium, Me, i Pr, t Bu, and Me, i Pr, t Ph optionally substituted with one or more substituents independently selected from the group consisting of Bu and Ph; where two or more adjacent substituents R II selectively forms aliphatic or aromatic or heteroaromatic, carbocyclic or heterocyclic ring systems and has the chemical formula H P -XI, H P -XII, H P -XIII, H P -XIV, H P -XV, H P -XVI, H P -XVII, H P -XVIII and H P -XIX, and adjacent substituents R II The fused ring system consisting of the additional ring optionally formed by contains a total of 12 to 60 carbon atoms, preferably 14 to 32 carbon atoms.

[0253] In a more preferred embodiment of the present invention, Z 1 is in each case a direct bond, and the adjacent substituent R II are not linked to form an additional ring system.

[0254] In a more preferred embodiment of the present invention, the p-host H P is selected from the group consisting of the following structures:

[0255] JPEG2025510014000008.jpg87170JPEG2025510014000009.jpg105170JPEG2025510014000010.jpg12917 0JPEG2025510014000011.jpg82170JPEG2025510014000012.jpg82170JPEG2025510014000013.jpg46170

[0256] In a preferred embodiment of the present invention, the n-host H N is the chemical formula H N -I, H N -II and H N -III, which comprises or consists of a structure according to any one of:

[0257] JPEG2025510014000014.jpg45170H N -IH N -IIH N -III

[0258] Here, R III and R IV are, in each occurrence, independently selected from the group consisting of: Hydrogen, deuterium, Me, i Pr, t Bu, CN, CF 3 , Me, i Pr,t Ph optionally substituted with one or more substituents independently selected from the group consisting of Bu and Ph; and Chemical formula H N -IV, H N -V, H N -VI, H N -VII, H N -VIII, H N -IX, H N -X, H N -XI, H N -XII, H N -XIII and H N -XIV,

[0259] JPEG2025510014000015.jpg26170H N -IV H N -VH N -VI JPEG2025510014000016.jpg26170H N -VII H N -VIII H N -IX JPEG2025510014000017.jpg23170H N -XH N -XI H N -XII JPEG2025510014000018.jpg24170H N -XIIIH N -XIV

[0260] Where: The dashed line represents the chemical formula H N -IV, H N -V, H N -VI, H N -VII, H N -VIII, H N -IX, HN-X, H N -XI, H N -XII, H N -XIII and H N -XIV is represented by the chemical formula H N -I, H N -II and HN -III, X 1 is oxygen (O), sulfur (S) or carbon (R V ) 2 and R V are, in each occurrence, independently selected from the group consisting of: Hydrogen, deuterium, Me, i Pr, t Bu, and Me, i Pr, t Ph optionally substituted with one or more substituents independently selected from the group consisting of Bu and Ph; where two or more adjacent substituents R V selectively forms aliphatic or aromatic or heteroaromatic, carbocyclic or heterocyclic ring systems and has the chemical formula H N -IV, H N -V, H N -VI, H N -VII, H N -VIII, H N -IX, H N -X, H N -XI, H N -XII, H N -XIII and H N -XIV, and adjacent substituents R V The fused ring system consisting of the additional ring optionally formed by Here, the chemical formula H N -I and H N In II, at least one substituent R III is CN.

[0261] In a more preferred embodiment of the present invention, the n-host H N is selected from the group consisting of the following structures:

[0262] JPEG2025510014000019.jpg101170JPEG2025510014000020.jpg134170JPEG2025510014000021.jpg49170

[0263] In one embodiment of the present invention, the n-host H contained in the optional light-emitting layer B of the organic electroluminescence device according to the present invention N does not contain any phosphine oxide groups, in particular the n-host H N is not bis[2-(diphenylphosphino)phenyl]etheroxide (DPEPO).

[0264] TADF material E B According to the present invention, a thermally activated delayed fluorescence (TADF) material E B is less than 0.4 eV, preferably less than 0.3 eV, more preferably less than 0.2 eV, even more preferably less than 0.1 eV, or even more preferably less than 0.05 eV, E ) and the lowest excited triplet state energy level E(T1 E ) corresponds to the energy difference ΔE ST Therefore, the TADF material E according to the present invention is characterized by exhibiting a value. B ΔE ST is the lowest excited triplet state T1 at room temperature (RT, i.e., (approximately) 20°C). E from the lowest excited singlet state S1 E is small enough to allow thermal repopulation (also called up-intersystem crossing or reverse intersystem crossing, RISC) of

[0265] Preferably, in the context of the present invention, the TADF material is a material that emits light due to charge carrier (hole and electron) recombination. E Immediate fluorescence is observed when the T1 E Activation of luminescent S1 through heat-activated RISC E When the state is reached, delayed fluorescence is observed.

[0266] A small FWHM emitter S included in the light-emitting layer B of the organic electroluminescent device according to the present invention B is selectively lowered to ΔE less than 0.4 eV. ST It is understood that the emitter may have a FWHM of 100 nm and exhibit thermally activated delayed fluorescence (TADF). However, in the context of the present invention, any small FWHM emitter S B In contrast, this is merely an optional feature.

[0267] In a preferred embodiment of the present invention, at least one TADF material E B and at least one small FWHM emitter S B (when both spectra are measured under equivalent conditions). In this case, there is a spectral overlap between the absorption spectrum of at least one TADF material E B is at least one small FWHM emitter S B Energy can be transferred to

[0268] According to the present invention, the TADF material E B has a maximum emission in the visible wavelength range of 380 nm to 800 nm, and is typically found in 10 wt % TADF material E in poly(methyl methacrylate) PMMA at room temperature (i.e., (approximately) 20° C.). B It is measured in.

[0269] In one embodiment of the present invention, each TADF material E B has a maximum emission in the deep blue wavelength range of 380 nm to 470 nm, preferably 400 nm to 470 nm, and is typically found in a 10 wt % TADF material E in poly(methyl methacrylate) PMMA at room temperature (i.e., (approximately) 20° C.). B It is measured in.

[0270] In one embodiment of the present invention, each TADF material E Bhas a maximum emission in the green wavelength range of 480 nm to 560 nm, preferably 500 nm to 560 nm, and is typically found in a 10 wt % TADF material E in poly(methyl methacrylate) PMMA at room temperature (i.e., (approximately) 20° C.). B It is measured in.

[0271] In one embodiment of the present invention, each TADF material E B has a maximum emission in the red wavelength range of 600 nm to 665 nm, preferably 610 nm to 665 nm, and is typically found in a 10 wt % TADF material E in poly(methyl methacrylate) PMMA at room temperature (i.e., (approximately) 20° C.). B It is measured in.

[0272] In a preferred embodiment of the present invention, the TADF material E B The maximum emission (peak emission) of a small FWHM emitter S in the context of the present invention is B It is at a wavelength shorter than the maximum emission (peak emission) of the

[0273] In a preferred embodiment of the present invention, each TADF material E B is an organic TADF material, which means in the context of the present invention that it does not contain any transition metal. Preferably, each TADF material E according to the present invention B is composed primarily of the elements hydrogen (H), carbon (C) and nitrogen (N), but may also contain, for example, oxygen (O), boron (B), silicon (Si), fluorine (F) and bromine (Br).

[0274] In a preferred embodiment of the present invention, each TADF material E B has a molecular weight of less than 800 g / mol.

[0275] In one embodiment of the present invention, a TADF emitter E B exhibits a photoluminescence quantum yield (PLQY) of 30% or more and is typically found in 10 wt% TADF material E in poly(methyl methacrylate) PMMA at room temperature (i.e., (approximately) 20 °C).B It is measured in.

[0276] In a preferred embodiment of the present invention, the TADF emitter E B exhibits a photoluminescence quantum yield (PLQY) of 50% or more and is typically found in 10 wt% TADF material E in poly(methyl methacrylate) PMMA at room temperature (i.e., (approximately) 20°C). B It is measured in.

[0277] In a more preferred embodiment of the present invention, the TADF emitter E B exhibits a photoluminescence quantum yield (PLQY) of 70% or more and is typically obtained at 10 wt% of TADF material E in poly(methyl methacrylate) PMMA at room temperature (i.e., approximately 20°C). B It is measured in.

[0278] In one embodiment of the present invention, at least one, preferably each, TADF material E B teeth, (i) The lowest excited singlet state energy level E(S1 E ) and the lowest excited triplet state energy level E(T1 E ) corresponds to the energy difference ΔE ST a value of less than 0.4 eV, (ii) exhibit a photoluminescence quantum yield (PLQY) greater than 30%;

[0279] In one embodiment of the present invention, each TADF material E B The lowest unoccupied orbital LUMO (E B ) of energy E LUMO (E B ) is less than -2.6 eV.

[0280] Those skilled in the art will appreciate that the TADF molecule E B We know how to design a ΔE ST generally decreases, and in the context of the present invention, ΔE STis smaller than 0.4 eV as mentioned above. This is because the TADF molecule E B This is achieved by designing the HOMO and LUMO groups as the HOMO and LUMO groups. These groups are generally bulky or twisted, connected via spiro junctions, which reduces the spatial overlap of the HOMO and LUMO. However, minimizing the spatial overlap of the HOMO and LUMO also reduces the photoluminescence quantum yield (PLQY) of the TADF material, which is undesirable. Therefore, in practice, both of these effects should be considered to determine the ΔE ST Reduce and achieve high PLQY.

[0281] One common approach for TADF material design is to covalently link one or more HOMO-distributed (electron) donor moieties and one or more LUMO-distributed (electron) acceptor moieties to the same bridge, referred to herein as a linker group. B can, for example, contain two or three linker groups attached to the same acceptor moiety, with additional donor and acceptor moieties attached to each of the two or three linker groups.

[0282] Also, one or more donor moieties and one or more acceptor moieties can be directly bonded to one another (without the presence of a linker group).

[0283] Exemplary donor moieties are derivatives of diphenylamine, carbazole, acridine, phenoxazine and related structures.

[0284] Derivatives of benzene, biphenyl, and to some extent terphenyl, are common linker groups.

[0285] Nitrile groups are very common acceptor moieties in TADF molecules, well-known examples of which include:

[0286] (i) Carbazolyldicyanobenzene compounds 2CzPN (4,5-di(9H-carbazol-9-yl)phthalonitrile), DCzIPN (4,6-di(9H-carbazol-9-yl)isophthalonitrile), 4CzPN (3,4,5,6-tetra(9H-carbazol-9-yl)phthalonitrile), 4CzIPN (2,4,5,6-tetra(9H-carbazol-9-yl)isophthalonitrile), 4CzTPN (2,4,5,6-tetra(9H-carbazol-9-yl)terephthalonitrile) and their derivatives,

[0287] (ii) Carbazolylcyanopyridine compounds 4CzCNPy (2,3,5,6-tetra(9H-carbazol-9-yl)-4-cyanopyridine) and its derivatives,

[0288] (iii) Carbazolylcyanobiphenyl compounds CNBPCz (4,4',5,5'-tetra(9H-carbazol-9-yl)-[1,1'-biphenyl]-2,2'-dicarbonitrile), CzBPCN (4,4',6,6'-tetra(9H-carbazol-9-yl)-[1,1'-biphenyl]-3,3'-dicarbonitrile), DDCzIPN (3,3',5,5'-tetra(9H-carbazol-9-yl)-[1,1'-biphenyl]-2,2',6,6'-tetracarbonitrile) and their derivatives, wherein in these materials, one or more of the nitrile groups may have fluorine (F) or trifluoromethyl (CF) as an acceptor moiety. 3 ) can also be substituted.

[0289] Nitrogen heterocycles such as triazine, pyrimidine, triazole, oxadiazole, thiadiazole, heptazine, 1,4-diazatriphenylene, benzothiazole, benzoxazole, quinoxaline, and diazafluorene derivatives are also well-known acceptor moieties used in TADF molecular constructions. For example, known examples of TADF molecules containing triazine acceptors include PIC-TRZ (7,7'-(6-([1,1'-biphenyl]-4-yl)-1,3,5-triazine-2,4-diyl)bis(5-phenyl-5,7-dihydroindolo[2,3-b]carbazole)), mBFCzTrz (5-(3-(4,6-diphenyl-1,3,5-triazin-2-yl))phenyl)-5H-benzofuro[3,2-c]carbazole), and DCzTrz (9,9'-(5-(4,6-diphenyl-1,3,5-triazin-2-yl)-1,3-phenylene)bis(9H-carbazole)).

[0290] Another group of TADF materials includes diaryl ketones such as benzophenone, or (heteroaryl)aryl ketones such as 4-benzoylpyridine, 9,10-anthraquinone, 9H-xanthen-9-one and their derivatives as acceptor moieties to which donor moieties (mainly carbazolyl substituents) are attached. Examples of such TADF molecules include BPBCz (bis(4-(9'-phenyl-9H,9'H-[3,3'-bicarbazol]-9-yl)phenyl)methanone), mDCBP ((3,5-di(9H-carbazol-9-yl)phenyl)(pyridin-4-yl)methanone), AQ-DTBu-Cz (2,6-bis(4-(3,6-di-tert-butyl-9H-carbazol-9-yl)phenyl)anthracene-9,10-dione), and MCz-XT (3-(1,3,6,8-tetramethyl-9H-carbazol-9-yl)-9H-xanthen-9-one), respectively.

[0291] Sulfoxides, particularly diphenyl sulfoxides, are also commonly used as acceptor moieties for the construction of TADF materials; well-known examples include 4-PC-DPS (9-phenyl-3-(4-(phenylsulfonyl)phenyl)-9H-carbazole), DitBu-DPS (9,9'-(sulfonylbis(4,1-phenylene))bis(9H-carbazole)), and TXO-PhCz (2-(9-phenyl-9H-carbazol-3-yl)-9H-xanthen-9-one 10,10-dioxide).

[0292] The specific material meets the basic requirements mentioned above, i.e., ΔE ST By way of example, all of the above-mentioned groups of TADF molecules are suitable for use in the present invention, provided that the value is less than 0.4 eV. B can be provided.

[0293] Those skilled in the art will recognize that many more materials than just the named structures are suitable TADF materials in the context of the present invention. B The skilled artisan is familiar with the principles of designing such molecules and knows how to design such molecules having particular emission hues (e.g., blue, green or red emission).

[0294] Other contributions include: H. Tanaka, K. Shizu, H. Nakanotani, C. Adachi, Chemistry of Materials 2013, 25(18), 3766, DOI: 10.1021 / cm402428a; Advanced Materials 2013, 25(24), 3319, Advanced Materials 2013, 25(24), 3319; Nasu K., Nakagawa T., Nomura H., Lin C.-J., Cheng C.-H., Tseng M.-R., Yasudad T., Adachi C., Chemical Communications 2013, 49(88), 10385, DOI: 10.1039 / c3cc44179b; Nature Photonics 2014, 8(4), 326, DOI: 10.1038 / nphoton.2014.12; B.Wex, BRKafarani, Journal of Materials Chemistry C 2017, 5, 8622, DOI: 10.1039 / c7tc02156a; Chemistry of Materials 2017, 29(5), 1946, DOI: 10.1021 / acs.chemmater.6b05324; Beilstein Journal of Organic Chemistry 2018, 14, 282, DOI: 10.3762 / bjoc.14.18; X. Liang, Z.-L.Tu, Y.-X.Zheng, Chemistry-A European Journal 2019, 25(22), 5623, DOI: 10.1002 / chem.201805952. .

[0295] Also, for example, US2015105564(A1), US2015048338(A1), US2015141642(A1), US2014336379(A1), US2014138670(A1), US2012241732(A1), EP3315581(A1), EP3483156(A1), and US2018053901(A1) disclose TADF materials E that can be used in the organic electroluminescence device according to the present invention. B This is not meant to imply that the present invention is limited to organic electroluminescent devices that include the TADF materials disclosed in the cited references. Also, any TADF material used in the prior art is considered to be a suitable TADF material E in the context of the present invention. B It is understood that.

[0296] In one embodiment of the present invention, each TADF material E B CN, CF 3 and an optionally substituted 1,3,5-triazinyl group.

[0297] In one embodiment of the present invention, each TADF material E B comprises one or more chemical moieties independently selected from the group consisting of CN and an optionally substituted 1,3,5-triazinyl group.

[0298] In one embodiment of the present invention, each TADF material E B contains one or more optionally substituted 1,3,5-triazinyl groups.

[0299] In one embodiment of the present invention, each TADF material E Bcomprises one or more chemical moieties independently selected from amino, indolyl, carbazolyl and derivatives thereof, any of which may be optionally substituted, wherein the groups are bonded to the core structure of the respective TADF molecule via a nitrogen (N) or carbon (C) atom, and the substituents bonded to the groups may form a monocyclic or polycyclic, aliphatic or aromatic, carbocyclic or heterocyclic ring system.

[0300] In a preferred embodiment of the present invention, at least one, preferably each, TADF material E B Includes: - one or more first chemical moieties independently selected from amino, indolyl, carbazolyl and derivatives thereof, each of which is optionally substituted, wherein the groups are attached to the core structure of the respective TADF molecule via a nitrogen (N) or carbon (C) atom, and the substituents attached to the groups can form a monocyclic or polycyclic, aliphatic or aromatic, carbocyclic or heterocyclic ring system; -CN, CF 3 and one or more second chemical moieties independently selected from the group consisting of optionally substituted 1,3,5-triazinyl groups.

[0301] In a more preferred embodiment of the present invention, at least one, preferably each, TADF material E B Includes: - one or more first chemical moieties independently selected from amino, indolyl, carbazolyl and derivatives thereof, each of which is optionally substituted, wherein the groups are attached to the core structure of the respective TADF molecule via a nitrogen (N) or carbon (C) atom, and the substituents attached to the groups can form a monocyclic or polycyclic, aliphatic or aromatic, carbocyclic or heterocyclic ring system; one or more second chemical moieties independently selected from the group consisting of: -CN and an optionally substituted 1,3,5-triazinyl group.

[0302] In a more preferred embodiment of the present invention, at least one, preferably each, TADF material E B Includes: - one or more first chemical moieties independently selected from amino, indolyl, carbazolyl and derivatives thereof, each of which is optionally substituted, wherein the groups are attached to the core structure of the respective TADF molecule via a nitrogen (N) or carbon (C) atom, and the substituents attached to the groups can form a monocyclic or polycyclic, aliphatic or aromatic, carbocyclic or heterocyclic ring system; -1 or more optionally substituted 1,3,5-triazinyl groups.

[0303] Those skilled in the art know that the term "derivatives thereof" means that the respective parent structure is selectively substituted or any atom within the respective parent structure is replaced, for example, with an atom of another element.

[0304] In one embodiment of the present invention, an organic electroluminescent device comprising at least one light-emitting layer B comprises: (i) The lowest excited singlet state energy level E(S1 H ) and the lowest excited triplet state energy level E(T1 H At least one host material H B , (ii) The lowest excited singlet state energy level E(S1 P ) and the lowest excited triplet state energy level E(T1 P At least one phosphorescent material P B , (iii) The lowest excited singlet state energy level E(S1 S ) and the lowest excited triplet state energy level E(T1 S At least one small full width at half maximum (FWHM) emitter S B , where S B emits light having a full width at half maximum (FWHM) of 0.25 eV or less; and (iv) The lowest excited singlet state energy level E(S1 E) and the lowest excited triplet state energy level E(T1 E At least one thermally activated delayed fluorescence (TADF) material E B , Here, the relationships expressed by the following equations (1) and (2) apply: E(T1 H )>E(T1 P ) (1) E(T1 H )>E(T1 E ) (2), Here, each TADF material E B Includes: - one or more first chemical moieties independently selected from amino, indolyl, carbazolyl and derivatives thereof, each of which is optionally substituted, wherein the groups are attached to the core structure of the respective TADF molecule via a nitrogen (N) or carbon (C) atom, and the substituents attached to the groups can form a monocyclic or polycyclic, aliphatic or aromatic, carbocyclic or heterocyclic ring system; one or more second chemical moieties independently selected from the group consisting of: -CN and an optionally substituted 1,3,5-triazinyl group.

[0305] In one embodiment of the present invention, each TADF material E B Includes: - one or more first chemical moieties each comprising or consisting of a structure according to formula DI,

[0306] [Chemical formula DI] JPEG2025510014000022.jpg40170

[0307] -Optionally, CN, CF 3 and one or more second chemical moieties, each independently selected from a structure according to any one of formulas AI, A-II, A-III, and A-IV;

[0308] JPEG2025510014000023.jpg21170A-I A-II A-III A-IV

[0309] - one third chemical moiety comprising or consisting of a structure according to any one of the chemical formulae LI, L-II, L-III, L-IV, LV, L-VI, L-VII and L-VIII,

[0310] JPEG2025510014000024.jpg44170L-I L-II JPEG2025510014000025.jpg34170L-III L-IV JPEG2025510014000026.jpg50170L-V L-VI JPEG2025510014000027.jpg65170L-VII L-VIII

[0311] Where: the one or more first chemical moieties and the one or more second chemical moieties are covalently bonded to a third chemical moiety via a single bond; In the chemical formula DI, # represents a single bond attachment site linking each first chemical moiety of formula DI to a third chemical moiety; Z 2 are, in each case independently of one another, a direct bond, CR 1 R 2 , C=CR 1 R 2 , C=O, C=NR 1 , N.R. 1 , O, SiR 1 R 2 , S, S(O) and S(O) 2 is selected from the group consisting of R a , R b , R d , R 1 and R 2 are, in each occurrence, independently selected from the group consisting of: Hydrogen, deuterium, N(R 3 )2 , OR 3 , Si(R 3 ) 3 , B(OR 3 ) 2 , O.S.O. 2 R 3 , C.F. 3 , CN, F, Cl, Br, I, C 1 -C 40 Alkyl, This can be optionally substituted with one or more substituents R 3 is replaced by Here, one or more non-adjacent CH 2 The group is optionally R 3 C=CR 3 , C≡C, Si(R 3 ) 2 , Ge(R 3 ) 2 , Sn(R 3 ) 2 , C=O, C=S, C=Se, C=NR 3 , P(=O)(R 3 ), SO, SO 2 , N.R. 3 , O, S or CONR 3 is replaced by C 1 -C 40 Alkoxy, This can be optionally substituted with one or more substituents R 3 is replaced by Here, one or more non-adjacent CH 2 The group is optionally R 3 C=CR 3 , C≡C, Si(R 3 ) 2 , Ge(R 3 ) 2 , Sn(R 3 ) 2 , C=O, C=S, C=Se, C=NR 3 , P(=O)(R 3 ), SO, SO 2 , N.R. 3 , O, S or CONR 3 is replaced by C 1 -C 40 Thioalkoxy, This can be optionally substituted with one or more substituents R 3 is replaced by Here, one or more non-adjacent CH 2 The group is optionally R 3 C=CR 3 , C≡C, Si(R 3 ) 2 , Ge(R 3 ) 2 , Sn(R 3 ) 2 , C=O, C=S, C=Se, C=NR 3 , P(=O)(R 3 ), SO, SO 2 , N.R. 3 , O, S or CONR 3 is replaced by C 2 -C 40 Alkenyl, This can be optionally substituted with one or more substituents R 3 is replaced by Here, one or more non-adjacent CH 2 The group is optionally R 3 C=CR 3 , C≡C, Si(R 3 ) 2 , Ge(R 3 ) 2 , Sn(R 3 ) 2 , C=O, C=S, C=Se, C=NR 3 , P(=O)(R 3 ), SO, SO 2 , N.R. 3 , O, S or CONR 3 is replaced by C 2 -C 40 Alkynyl, This can be optionally substituted with one or more substituents R 3 is replaced by Here, one or more non-adjacent CH 2 The group is optionally R 3 C=CR 3 , C≡C, Si(R 3 ) 2 , Ge(R 3 ) 2 , Sn(R 3 ) 2, C=O, C=S, C=Se, C=NR 3 , P(=O)(R 3 ), SO, SO 2 , N.R. 3 , O, S or CONR 3 is replaced by Optionally, one or more substituents R 3 C replaced with 6 -C 60 Aryl, and Optionally, one or more substituents R 3 C replaced with 3 -C 60 Heteroaryl, R 3 are, in each occurrence, independently selected from the group consisting of: Hydrogen, deuterium, N(R 4 ) 2 , OR 4 , Si(R 4 ) 3 , B(OR 4 ) 2 , O.S.O. 2 R 4 , C.F. 3 ,CN,F,Br,I, C 1 -C 40 Alkyl, This can be optionally substituted with one or more substituents R 4 is replaced by Here, one or more non-adjacent CH 2 The group is optionally R 4 C=CR 4 , C≡C, Si(R 4 ) 2 , Ge(R 4 ) 2 , Sn(R 4 ) 2 , C=O, C=S, C=Se, C=NR 4 , P(=O)(R 4 ), SO, SO 2 , N.R. 4 , O, S or CONR 4 is replaced by C 1 -C 40 Alkoxy, This can be optionally substituted with one or more substituents R4 is replaced by Here, one or more non-adjacent CH 2 The group is optionally R 4 C=CR 4 , C≡C, Si(R 4 ) 2 , Ge(R 4 ) 2 , Sn(R 4 ) 2 , C=O, C=S, C=Se, C=NR 4 , P(=O)(R 4 ), SO, SO 2 , N.R. 4 , O, S or CONR 4 is replaced by C 1 -C 40 Thioalkoxy, This can be optionally substituted with one or more substituents R 4 is replaced by Here, one or more non-adjacent CH 2 The group is optionally R 4 C=CR 4 , C≡C, Si(R 4 ) 2 , Ge(R 4 ) 2 , Sn(R 4 ) 2 , C=O, C=S, C=Se, C=NR 4 , P(=O)(R 4 ), SO, SO 2 , N.R. 4 , O, S or CONR 4 is replaced by C 2 -C 40 Alkenyl, This can be optionally substituted with one or more substituents R 4 is replaced by Here, one or more non-adjacent CH 2 The group is optionally R 4 C=CR 4 , C≡C, Si(R 4 ) 2 , Ge(R 4 ) 2 , Sn(R 4 ) 2, C=O, C=S, C=Se, C=NR 4 , P(=O)(R 4 ), SO, SO 2 , N.R. 4 , O, S or CONR 4 is replaced by C 2 -C 40 Alkynyl, This can be optionally substituted with one or more substituents R 4 is replaced by Here, one or more non-adjacent CH 2 The group is optionally R 4 C=CR 4 , C≡C, Si(R 4 ) 2 , Ge(R 4 ) 2 , Sn(R 4 ) 2 , C=O, C=S, C=Se, C=NR 4 , P(=O)(R 4 ), SO, SO 2 , N.R. 4 , O, S or CONR 4 is replaced by Optionally, one or more substituents R 4 C replaced with 6 -C 60 Aryl, and Optionally, one or more substituents R 4 C replaced with 3 -C 57 Heteroaryl, wherein optionally, the optional substituent R a , R b , R d , R 1 , R 2 , R 3 and R 4 are, independently of each other, R a , R b , R d , R 1 , R 2 , R 3 and R 4together with one or more adjacent substituents selected from, form a monocyclic or polycyclic, aliphatic or aromatic or heteroaromatic, carbocyclic or heterocyclic and / or benzo-fused ring system, wherein optionally the ring system thus formed optionally contains one or more substituents R 5 is replaced by R 4 and R 5 are, in each occurrence, independently selected from the group consisting of: Hydrogen, deuterium, OPh, CF 3 ,C.N.,F. C 1 -C 5 Alkyl, wherein optionally one or more hydrogen atoms are independently selected from deuterium, CN, CF 3 or replaced by F, C 1 -C 5 Alkoxy, wherein optionally one or more hydrogen atoms are independently selected from deuterium, CN, CF 3 or replaced by F, C 1 -C 5 Thioalkoxy, wherein optionally one or more hydrogen atoms are independently selected from deuterium, CN, CF 3 or replaced by F, C 2 -C 5 Alkenyl, wherein optionally one or more hydrogen atoms are independently selected from deuterium, CN, CF 3 or replaced by F, C 2 -C 5 Alkynyl, wherein optionally one or more hydrogen atoms are independently selected from deuterium, CN, CF 3 or replaced by F, C 6 -C 18 Aryl, wherein optionally one or more hydrogen atoms are independently selected from deuterium, C 1 -C 5 substituted with alkyl, Ph or CN; C 3 -C 17 Heteroaryl, wherein optionally one or more hydrogen atoms are independently selected from deuterium, Ph or C 1 -C 5 is substituted with alkyl, N(C 6 -C 18 Aryl) 2 , N(C 3 -C 17 Heteroaryl) 2 , and N(C 3 -C 17 Heteroaryl)(C 6 -C 18 aryl), a is an integer, 0 or 1; b is an integer, in each case 0 or 1, where both b are always identical; where when integer a is 1, both integers b are 0, and when both integers b are 1, integer a is 0, In the chemical formulas AI, A-II, A-III, and A-IV, the dashed lines represent single bonds connecting the respective second chemical moieties according to formula AI, A-II, A-III, or A-IV to a third chemical moiety; Q 1 are in each case, independently of one another, nitrogen (N), CR 6 and CR 7 provided that in formula AI, two adjacent groups Q 1 are not nitrogen (N), and here, the group Q of the formula AI 1 If none of the groups is nitrogen (N), the group Q 1 At least one of them is CR 7 and Q 2 are, in each case independently of one another, nitrogen (N) and CR 6 with the proviso that in formulae A-II and A-III, at least one group Q 2 is nitrogen (N) and two adjacent groups Q 2are not nitrogen (N), R 6 and R 8 are, in each occurrence, independently selected from the group consisting of: Hydrogen, deuterium, N(R 9 ) 2 , OR 9 , Si(R 9 ) 3 , B(OR 9 ) 2 , O.S.O. 2 R 9 , C.F. 3 , CN, F, Cl, Br, I, C 1 -C 40 Alkyl, This can be optionally substituted with one or more substituents R 9 is replaced by Here, one or more non-adjacent CH 2 The group is optionally R 9 C=CR 9 , C≡C, Si(R 9 ) 2 , Ge(R 9 ) 2 , Sn(R 9 ) 2 , C=O, C=S, C=Se, C=NR 9 , P(=O)(R 9 ), SO, SO 2 , N.R. 9 , O, S or CONR 9 is replaced by C 1 -C 40 Alkoxy, This can be optionally substituted with one or more substituents R 9 is replaced by Here, one or more non-adjacent CH 2 The group is optionally R 9 C=CR 9 , C≡C, Si(R 9 ) 2 , Ge(R 9 ) 2 , Sn(R 9 ) 2 , C=O, C=S, C=Se, C=NR 9 , P(=O)(R 9), SO, SO 2 , N.R. 9 , O, S or CONR 9 is replaced by C 1 -C 40 Thioalkoxy, This can be optionally substituted with one or more substituents R 9 is replaced by Here, one or more non-adjacent CH 2 The group is optionally R 9 C=CR 9 , C≡C, Si(R 9 ) 2 , Ge(R 9 ) 2 , Sn(R 9 ) 2 , C=O, C=S, C=Se, C=NR 9 , P(=O)(R 9 ), SO, SO 2 , N.R. 9 , O, S or CONR 9 is replaced by C 2 -C 40 Alkenyl, This can be optionally substituted with one or more substituents R 9 is replaced by Here, one or more non-adjacent CH 2 The group is optionally R 9 C=CR 9 , C≡C, Si(R 9 ) 2 , Ge(R 9 ) 2 , Sn(R 9 ) 2 , C=O, C=S, C=Se, C=NR 9 , P(=O)(R 9 ), SO, SO 2 , N.R. 9 , O, S or CONR 9 is replaced by C 2 -C 40 Alkynyl, This can be optionally substituted with one or more substituents R 9 is replaced by Here, one or more non-adjacent CH 2 The group is optionally R9 C=CR 9 , C≡C, Si(R 9 ) 2 , Ge(R 9 ) 2 , Sn(R 9 ) 2 , C=O, C=S, C=Se, C=NR 9 , P(=O)(R 9 ), SO, SO 2 , N.R. 9 , O, S or CONR 9 is replaced by Optionally, one or more substituents R 9 C replaced with 6 -C 60 Aryl, and Optionally, one or more substituents R 9 C replaced with 3 -C 60 Heteroaryl, R 9 are, in each occurrence, independently selected from the group consisting of: Hydrogen, deuterium, N(R 10 ) 2 , OR 10 , Si(R 10 ) 3 , B(OR 10 ) 2 , O.S.O. 2 R 10 , C.F. 3 , CN, F, Cl, Br, I, C 1 -C 40 Alkyl, This can be optionally substituted with one or more substituents R 10 is replaced by Here, one or more non-adjacent CH 2 The group is optionally R 10 C=CR 10 , C≡C, Si(R 10 ) 2 , Ge(R 10 ) 2 , Sn(R 10 ) 2 , C=O, C=S, C=Se, C=NR 10 , P(=O)(R 10 ), SO, SO2 , N.R. 10 , O, S or CONR 10 is replaced by C 1 -C 40 Alkoxy, This can be optionally substituted with one or more substituents R 10 is replaced by Here, one or more non-adjacent CH 2 The group is optionally R 10 C=CR 10 , C≡C, Si(R 10 ) 2 , Ge(R 10 ) 2 , Sn(R 10 ) 2 , C=O, C=S, C=Se, C=NR 10 , P(=O)(R 10 ), SO, SO 2 , N.R. 10 , O, S or CONR 10 is replaced by C 1 -C 40 Thioalkoxy, This can be optionally substituted with one or more substituents R 10 is replaced by Here, one or more non-adjacent CH 2 The group is optionally R 10 C=CR 10 , C≡C, Si(R 10 ) 2 , Ge(R 10 ) 2 , Sn(R 10 ) 2 , C=O, C=S, C=Se, C=NR 10 , P(=O)(R 10 ), SO, SO 2 , N.R. 10 , O, S or CONR 10 is replaced by C 2 -C 40 Alkenyl, This can be optionally substituted with one or more substituents R 10 is replaced by Here, one or more non-adjacent CH 2 The group is optionally R 10C=CR 10 , C≡C, Si(R 10 ) 2 , Ge(R 10 ) 2 , Sn(R 10 ) 2 , C=O, C=S, C=Se, C=NR 10 , P(=O)(R 10 ), SO, SO 2 , N.R. 10 , O, S or CONR 10 is replaced by C 2 -C 40 Alkynyl, This can be optionally substituted with one or more substituents R 10 is replaced by Here, one or more non-adjacent CH 2 The group is optionally R 10 C=CR 10 , C≡C, Si(R 10 ) 2 , Ge(R 10 ) 2 , Sn(R 10 ) 2 , C=O, C=S, C=Se, C=NR 10 , P(=O)(R 10 ), SO, SO 2 , N.R. 10 , O, S or CONR 10 is replaced by Optionally, one or more substituents R 10 C replaced with 6 -C 60 Aryl, and Optionally, one or more substituents R 10 C replaced with 3 -C 60 Heteroaryl, R 10 are, in each occurrence, independently selected from the group consisting of: Hydrogen, deuterium, OPh, CF 3 ,C.N.,F. C 1 -C 5 Alkyl, wherein optionally one or more hydrogen atoms are independently selected from deuterium, CN, CF 3or replaced by F, C 1 -C 5 Alkoxy, wherein optionally one or more hydrogen atoms are independently selected from deuterium, CN, CF 3 or replaced by F, C 1 -C 5 Thioalkoxy, wherein optionally one or more hydrogen atoms are independently selected from deuterium, CN, CF 3 or replaced by F, C 2 -C 5 Alkenyl, wherein optionally one or more hydrogen atoms are independently selected from deuterium, CN, CF 3 or replaced by F, C 2 -C 5 Alkynyl, wherein optionally one or more hydrogen atoms are independently selected from deuterium, CN, CF 3 or replaced by F, C 6 -C 18 Aryl, wherein optionally one or more hydrogen atoms are independently selected from deuterium, C 1 -C 5 substituted with alkyl, Ph or CN; C 3 -C 17 Heteroaryl, wherein optionally one or more hydrogen atoms are independently selected from deuterium, Ph or C 1 -C 5 is substituted with alkyl, N(C 6 -C 18 Aryl) 2 , N(C 3 -C 17 Heteroaryl) 2 , and N(C 3 -C 17 Heteroaryl)(C 6 -C 18 aryl), R7 are, in each case independently of one another, CN, CF 3 and a structure according to formula EWG-I,

[0312] [Chemical formula EWG-I] JPEG2025510014000028.jpg25170

[0313] Here, R X is R 6 where, in the formula EWG-I, at least one R X The group is CN or CF 3 and wherein in formula A-IV, two adjacent groups R 8 optionally forms an aromatic ring, which is fused to the structure of formula A-IV, and optionally contains one or more substituents R 10 wherein optionally the fused ring system thus formed contains a total of 9 to 18 ring atoms; In the chemical formulas LI, L-II, L-III, L-IV, LV, L-VI, L-VII and L-VIII, Q 3 are, in each case independently of one another, nitrogen (N) and CR 12 , with the proviso that at least one Q 3 is nitrogen (N), R 11 are, in each occurrence, independently of each other, a single bond attachment site linking the first or second chemical moiety to a third chemical moiety, or are, independently of each other, selected from the group consisting of: Hydrogen, deuterium, F, Cl, Br, I, C 1 -C 5 Alkyl, wherein optionally one or more hydrogen atoms are replaced with deuterium; C 6 -C 18 Aryl, wherein optionally one or more hydrogen atoms are independently selected from deuterium, C 1 -C 5 Alkyl group, C6 -C 18 substituted with aryl groups, F, Cl, Br and I; R 12 is R 6 It is defined as wherein the maximum number of first and second chemical moieties attached to a third chemical moiety is determined by the number of binding sites available on the third chemical moiety (i.e., the number of substituents R 11 The number of TADF materials E B comprises at least one first chemical moiety, at least one second chemical moiety, and exactly one third chemical moiety.

[0314] In a preferred embodiment of the present invention, Z 2 are, in each case independently of one another, a direct bond, CR 1 R 2 , C=CR 1 R 2 , C=O, C=NR 1 , N.R. 1 , O, SiR 1 R 2 , S, S(O) and S(O) 2 is selected from the group consisting of R a , R b , R d , R 1 and R 2 are, in each occurrence, independently selected from the group consisting of: Hydrogen, deuterium, N(R 3 ) 2 , OR 3 , Si(R 3 ) 3 , C.F. 3 , CN, F, Cl, Br, I, C 1 -C 40 Alkyl, This can be optionally substituted with one or more substituents R 3 is replaced by Here, one or more non-adjacent CH 2 The group is optionally R 3 C=CR3 , C≡C, Si(R 3 ) 2 , Ge(R 3 ) 2 , Sn(R 3 ) 2 , C=O, C=S, C=Se, C=NR 3 , P(=O)(R 3 ), SO, SO 2 , N.R. 3 , O, S or CONR 3 is replaced by Optionally, one or more substituents R 3 C replaced with 6 -C 60 Aryl, and Optionally, one or more substituents R 3 C replaced with 3 -C 60 Heteroaryl, R 3 are, in each occurrence, independently selected from the group consisting of: Hydrogen, deuterium, N(R 4 ) 2 , OR 4 , Si(R 4 ) 3 , C.F. 3 ,CN,F,Br,I, C 1 -C 40 Alkyl, This can be optionally substituted with one or more substituents R 4 is replaced by Here, one or more non-adjacent CH 2 The group is optionally R 4 C=CR 4 , C≡C, Si(R 4 ) 2 , Ge(R 4 ) 2 , Sn(R 4 ) 2 , C=O, C=S, C=Se, C=NR 4 , P(=O)(R 4 ), SO, SO 2 , N.R. 4 , O, S or CONR 4 is replaced by Optionally, one or more substituents R4 C replaced with 6 -C 60 Aryl, and Optionally, one or more substituents R 4 C replaced with 3 -C 57 Heteroaryl, wherein optionally, the optional substituent R a , R b , R d , R 1 , R 2 , R 3 and R 4 are, independently of each other, R a , R b , R d , R 1 , R 2 , R 3 and R 4 together with one or more adjacent substituents selected from, form a monocyclic or polycyclic, aliphatic or aromatic or heteroaromatic, carbocyclic or heterocyclic and / or benzo-fused ring system, wherein optionally the ring system thus formed optionally contains one or more substituents R 5 is replaced by R 4 and R 5 are, in each occurrence, independently selected from the group consisting of: Hydrogen, deuterium, CF 3 ,C.N.,F. C 1 -C 5 Alkyl, wherein optionally one or more hydrogen atoms are independently selected from deuterium, CN, CF 3 or replaced by F, C 6 -C 18 Aryl, wherein optionally one or more hydrogen atoms are independently selected from deuterium, C 1 -C 5 substituted with alkyl, Ph or CN; C 3 -C 17 Heteroaryl, wherein optionally one or more hydrogen atoms are independently selected from deuterium, C 1 -C5 substituted with alkyl or Ph; N(C 6 -C 18 Aryl) 2 , N(C 3 -C 17 Heteroaryl) 2 , and N(C 3 -C 17 Heteroaryl)(C 6 -C 18 aryl), a is an integer, 0 or 1; b is an integer, in each case 0 or 1, where both b are always identical; where when integer a is 1, both integers b are 0, and when both integers b are 1, integer a is 0, Q 1 are in each case, independently of one another, nitrogen (N), CR 6 and CR 7 provided that in formula AI, two adjacent groups Q 1 are not nitrogen (N), and here, the group Q of the formula AI 1 If none of the groups is nitrogen (N), the group Q 1 At least one of them is CR 7 and Q 2 are, in each case independently of one another, nitrogen (N) and CR 6 with the proviso that in formulae A-II and A-III, at least one group Q 2 is nitrogen (N) and two adjacent groups Q 2 are not nitrogen (N), R 6 and R 8 are, in each occurrence, independently selected from the group consisting of: Hydrogen, deuterium, N(R 9 ) 2 , OR 9 , Si(R 9 ) 3 , C.F. 3 , CN, F, Cl, Br, I, C 1 -C 40 Alkyl, This can be optionally substituted with one or more substituents R 9 is replaced by Here, one or more non-adjacent CH 2 The group is optionally R 9 C=CR 9 , C≡C, Si(R 9 ) 2 , Ge(R 9 ) 2 , Sn(R 9 ) 2 , C=O, C=S, C=Se, C=NR 9 , P(=O)(R 9 ), SO, SO 2 , N.R. 9 , O, S or CONR 9 is replaced by Optionally, one or more substituents R 9 C replaced with 6 -C 60 Aryl, and Optionally, one or more substituents R 9 C replaced with 3 -C 60 Heteroaryl, R 9 are, in each occurrence, independently selected from the group consisting of: Hydrogen, deuterium, N(R 10 ) 2 , OR 10 , Si(R 10 ) 3 , C.F. 3 , CN, F, Cl, Br, I, C 1 -C 40 Alkyl, This can be optionally substituted with one or more substituents R 10 is replaced by Here, one or more non-adjacent CH 2 The group is optionally R 10 C=CR 10 , C≡C, Si(R 10 ) 2 , Ge(R 10 ) 2 , Sn(R 10 )2 , C=O, C=S, C=Se, C=NR 10 , P(=O)(R 10 ), SO, SO 2 , N.R. 10 , O, S or CONR 10 is replaced by Optionally, one or more substituents R 10 C replaced with 6 -C 60 Aryl, and Optionally, one or more substituents R 10 C replaced with 3 -C 60 Heteroaryl, R 10 are, in each occurrence, independently selected from the group consisting of: Hydrogen, deuterium, OPh, CF 3 ,C.N.,F. C 1 -C 5 Alkyl, wherein optionally one or more hydrogen atoms are independently selected from deuterium, CN, CF 3 or replaced by F, C 6 -C 18 Aryl, wherein optionally one or more hydrogen atoms are independently selected from deuterium, C 1 -C 5 substituted with alkyl, Ph or CN; C 3 -C 17 Heteroaryl, wherein optionally one or more hydrogen atoms are independently selected from deuterium, C 1 -C 5 substituted with alkyl or Ph; N(C 6 -C 18 Aryl) 2 , N(C 3 -C 17 Heteroaryl) 2 , and N(C 3 -C 17 Heteroaryl)(C 6 -C 18aryl), R 7 are, in each case independently of one another, CN, CF 3 and a structure according to formula EWG-I,

[0315] [Chemical formula EWG-I] JPEG2025510014000029.jpg25170

[0316] Here, R X is R 6 where at least one R X The group is CN or CF 3 and wherein in formula A-IV, two adjacent groups R 8 optionally forms an aromatic ring, which is fused to the structure of formula A-IV, and optionally contains one or more substituents R 10 wherein optionally the fused ring system thus formed contains a total of 9 to 18 ring atoms; Q 3 are, in each case independently of one another, nitrogen (N) and CR 12 , with the proviso that at least one Q 3 is nitrogen (N), R 11 are, in each occurrence, independently of each other, a single bond attachment site linking the first or second chemical moiety to a third chemical moiety, or are, independently of each other, selected from the group consisting of: Hydrogen, deuterium, C 1 -C 5 Alkyl, wherein optionally one or more hydrogen atoms are replaced with deuterium; C 6 -C 18 Aryl, wherein optionally one or more hydrogen atoms are independently selected from deuterium, C 1 -C 5 Alkyl groups and C 6 -C 18 substituted with an aryl group, R 12is R 6 It is defined as wherein the maximum number of first and second chemical moieties attached to a third chemical moiety is determined by the number of binding sites available on the third chemical moiety (i.e., the number of substituents R 11 (Preferably, according to the above provisions, each TADF material E B comprises at least one first chemical moiety, at least one second chemical moiety, and exactly one third chemical moiety).

[0317] In a more preferred embodiment of the present invention, Z 2 are, in each case independently of one another, a direct bond, CR 1 R 2 , C=CR 1 R 2 , C=O, C=NR 1 , N.R. 1 , O, SiR 1 R 2 , S, S(O) and S(O) 2 is selected from the group consisting of R a , R b , R d , R 1 and R 2 are, in each occurrence, independently selected from the group consisting of: Hydrogen, deuterium, N(R 3 ) 2 , OR 3 , Si(R 3 ) 3 , C.F. 3 , CN, F, Cl, Br, I, Optionally, one or more substituents R 3 C replaced with 1 -C 5 Alkyl, Optionally, one or more substituents R 3 C replaced with 6 -C 18 Aryl, and Optionally, one or more substituents R 3 C replaced with 3 -C 17Heteroaryl, R 3 are, in each occurrence, independently selected from the group consisting of: Hydrogen, deuterium, N(R 4 ) 2 , Si(R 4 ) 3 , C.F. 3 ,C.N.,F. Optionally, one or more substituents R 4 C replaced with 1 -C 5 Alkyl, Optionally, one or more substituents R 4 C replaced with 6 -C 18 Aryl, and Optionally, one or more substituents R 4 C replaced with 3 -C 17 Heteroaryl, wherein optionally, the optional substituent R a , R b , R d , R 1 , R 2 and R 3 are, independently of each other, R a , R b , R d , R 1 , R 2 and R 3 together with one or more adjacent substituents selected from, form a monocyclic or polycyclic, aliphatic or aromatic or heteroaromatic, carbocyclic or heterocyclic and / or benzo-fused ring system, wherein optionally the ring system thus formed optionally contains one or more substituents R 5 is replaced by R 4 and R 5 are, in each occurrence, independently selected from the group consisting of: Hydrogen, deuterium, CF 3 ,CN,F,Me, i Pr, t Bu, N(Ph) 2 , and Ph, where optionally one or more hydrogen atoms are independently selected from deuterium, Me, i Pr,t Substituted with Bu and Ph, a is an integer, 0 or 1; b is an integer, in each case 0 or 1, where both b are always identical; where when integer a is 1, both integers b are 0, and when both integers b are 1, integer a is 0, Q 1 are in each case, independently of one another, nitrogen (N), CR 6 and CR 7 provided that in formula AI, two adjacent groups Q 1 are not nitrogen (N), and here, the group Q of the formula AI 1 If none of the groups is nitrogen (N), the group Q 1 At least one of them is CR 7 and Q 2 are, in each case independently of one another, nitrogen (N) and CR 6 with the proviso that in formulae A-II and A-III, at least one group Q 2 is nitrogen (N) and two adjacent groups Q 2 are not nitrogen (N), R 6 and R 8 are, in each occurrence, independently selected from the group consisting of: Hydrogen, deuterium, N(R 9 ) 2 , OR 9 , Si(R 9 ) 3 , C.F. 3 ,C.N.,F. Optionally, one or more substituents R 9 C replaced with 1 -C 5 Alkyl, Optionally, one or more substituents R 9 C replaced with 6 -C 18 Aryl, and Optionally, one or more substituents R 9 C replaced with 3 -C 17Heteroaryl, R 9 are, in each occurrence, independently selected from the group consisting of: Hydrogen, deuterium, N(R 10 ) 2 , OR 10 , Si(R 10 ) 3 , C.F. 3 ,C.N.,F. Optionally, one or more substituents R 10 C replaced with 1 -C 5 Alkyl, Optionally, one or more substituents R 10 C replaced with 6 -C 18 Aryl, and Optionally, one or more substituents R 10 C replaced with 3 -C 17 Heteroaryl, R 10 are, in each occurrence, independently selected from the group consisting of: Hydrogen, deuterium, Me, i Pr, t Bu, C.F. 3 ,CN,F,N(Ph) 2 , and Ph, where optionally one or more hydrogen atoms are independently selected from deuterium, Me, i Pr, t Bu, Ph, CN, CF 3 or replaced by F, R 7 are, in each case independently of one another, CN, CF 3 and a structure according to formula EWG-I,

[0318] [Chemical formula EWG-I] JPEG2025510014000030.jpg25170

[0319] Here, R X is R 6 where at least one R X The group is CN or CF3 and wherein in formula A-IV, two adjacent groups R 8 optionally forms an aromatic ring, which is fused to the structure of formula A-IV, and optionally contains one or more substituents R 10 wherein optionally the fused ring system thus formed contains a total of 9 to 18 ring atoms; Q 3 are, in each case independently of one another, nitrogen (N) and CR 12 , with the proviso that at least one Q 3 is nitrogen (N), R 11 are, in each occurrence, independently of each other, a single bond attachment site linking the first or second chemical moiety to a third chemical moiety, or are, independently of each other, selected from the group consisting of: Hydrogen, deuterium, C 1 -C 5 Alkyl, wherein optionally one or more hydrogen atoms are replaced with deuterium; Deuterium, Me, i Pr, t C optionally substituted with one or more substituents independently selected from the group consisting of Bu and Ph 6 -C 18 Aryl, R 12 is R 6 It is defined as wherein the maximum number of first and second chemical moieties attached to a third chemical moiety is determined by the number of binding sites available on the third chemical moiety (i.e., the number of substituents R 11 (Preferably, according to the above provisions, each TADF material E B comprises at least one first chemical moiety, at least one second chemical moiety, and exactly one third chemical moiety).

[0320] In a more preferred embodiment of the present invention, Z 2are, in each case independently of one another, a direct bond, CR 1 R 2 , C=O, NR 1 , O, SiR 1 R 2 , S, S(O) and S(O) 2 is selected from the group consisting of R a , R b , R d , R 1 and R 2 are, in each occurrence, independently selected from the group consisting of: Hydrogen, deuterium, N(R 3 ) 2 , OR 3 , Si(R 3 ) 3 , C.F. 3 , C.N., Optionally, one or more substituents R 3 C replaced with 1 -C 5 Alkyl, Optionally, one or more substituents R 3 C replaced with 6 -C 18 Aryl, and Optionally, one or more substituents R 3 C replaced with 3 -C 17 Heteroaryl, R 3 are, in each occurrence, independently selected from the group consisting of: Hydrogen, deuterium, CF 3 ,CN,F,Me, i Pr, t Bu, N(Ph) 2 , Ph, where optionally one or more hydrogen atoms are independently selected from deuterium, Me, i Pr, t Substituted with Bu and Ph, wherein optionally, the optional substituent R a , R b , R d , R 1 and R 2 are, independently of each other, R a , Rb , R d , R 1 and R 2 together with one or more adjacent substituents selected from: Hydrogen, deuterium, Me, i Pr, t Bu, CN, CF 3 , F, and Ph, where optionally one or more hydrogen atoms are independently selected from deuterium, Me, i Pr, t Substituted with Bu and Ph, wherein the fused ring system thus formed, consisting of the structure according to formula D-1 and the attached rings formed by adjacent substituents, optionally contains a total of 13 to 30 ring atoms, preferably 16 to 30 ring atoms; a is an integer, 0 or 1; b is an integer, in each case 0 or 1, where both b are always identical; where when integer a is 1, both integers b are 0, and when both integers b are 1, integer a is 0, Q 1 are in each case, independently of one another, nitrogen (N), CR 6 and CR 7 provided that in formula AI, two adjacent groups Q 1 are not nitrogen (N), and here, the group Q of the formula AI 1 If none of the groups is nitrogen (N), the group Q 1 At least one of them is CR 7 and Q 2 are, in each case independently of one another, nitrogen (N) and CR 6 with the proviso that in formulae A-II and A-III, at least one group Q 2 is nitrogen (N) and two adjacent groups Q2 are not nitrogen (N), R 6 and R 8 are, in each occurrence, independently selected from the group consisting of: Hydrogen, deuterium, N(R 9 ) 2 , OR 9 , Si(R 9 ) 3 , C.F. 3 ,C.N.,F. Optionally, one or more substituents R 9 C replaced with 1 -C 5 Alkyl, Optionally, one or more substituents R 9 C replaced with 6 -C 18 Aryl, and Optionally, one or more substituents R 9 C replaced with 3 -C 17 Heteroaryl, R 9 are, in each occurrence, independently selected from the group consisting of: Hydrogen, deuterium, Me, i Pr, t Bu, C.F. 3 ,CN,F,N(Ph) 2 , and Ph, where optionally one or more hydrogen atoms are independently selected from deuterium, Me, i Pr, t Bu, Ph, CN, CF 3 or replaced by F, R 7 are, in each case independently of one another, CN, CF 3 and a structure according to formula EWG-I,

[0321] [Chemical formula EWG-I] JPEG2025510014000031.jpg25170

[0322] Here, R X is R 6where at least one R X The group is CN or CF 3 and wherein in formula A-IV, two adjacent groups R 8 optionally forms an aromatic ring, which is fused to the structure of formula A-IV and is optionally substituted with one or more substituents selected from the group consisting of: Hydrogen, deuterium, Me, i Pr, t Bu, C.F. 3 , C.N., and Ph, where optionally one or more hydrogen atoms are independently selected from deuterium, Me, i Pr, t Bu, Ph, CN or CF 3 is replaced by wherein optionally the fused ring system thus formed contains a total of 9 to 18 ring atoms; Q 3 are, in each case independently of one another, nitrogen (N) and CR 12 , with the proviso that at least one Q 3 is nitrogen (N), R 11 are, in each occurrence, independently of each other, a single bond attachment site linking the first or second chemical moiety to a third chemical moiety, or are, independently of each other, selected from the group consisting of: Hydrogen, deuterium, Me, i Pr, t Bu, and Deuterium, Me, i Pr, t Ph optionally substituted with one or more substituents independently selected from the group consisting of Bu and Ph; R 12 is R 6 It is defined as wherein the maximum number of first and second chemical moieties attached to a third chemical moiety is determined by the number of binding sites available on the third chemical moiety (i.e., the number of substituents R 11 (Preferably, according to the above provisions, each TADF material E Bcomprises at least one first chemical moiety, at least one second chemical moiety, and exactly one third chemical moiety).

[0323] In a more preferred embodiment of the present invention, Z 2 are, in each case independently of one another, a direct bond, CR 1 R 2 , C=O, NR 1 , O, SiR 1 R 2 , S, S(O) and S(O) 2 is selected from the group consisting of R a , R b and R d are, in each occurrence, independently selected from the group consisting of: Hydrogen, deuterium, N(R 3 ) 2 , OR 3 , Si(R 3 ) 3 , C.F. 3 ,CN,Me, i Pr, t Bu, Ph, where optionally one or more hydrogen atoms are independently selected from deuterium, Me, i Pr, t Substituted with Bu and Ph, carbazolyl, where optionally one or more hydrogen atoms are independently selected from deuterium, Me, i Pr, t Substituted with Bu and Ph, triazinyl, where optionally one or more hydrogen atoms are independently selected from deuterium, Me, i Pr, t Substituted with Bu and Ph, pyrimidinyl, where optionally one or more hydrogen atoms are independently selected from deuterium, Me, i Pr, t Substituted with Bu and Ph, pyridinyl, where optionally one or more hydrogen atoms are independently selected from deuterium, Me, i Pr, t Substituted with Bu and Ph, R 1 and R 2 are, in each occurrence, independently selected from the group consisting of: Hydrogen, deuterium, N(R 3 ) 2 , OR 3 , Si(R 3 ) 3 , C.F. 3 , C.N., Optionally, one or more substituents R 3 C replaced with 1 -C 5 Alkyl, Optionally, one or more substituents R 3 C replaced with 6 -C 18 Aryl, and Optionally, one or more substituents R 3 C replaced with 3 -C 17 Heteroaryl, R 3 are, in each occurrence, independently selected from the group consisting of: Hydrogen, deuterium, CF 3 ,CN,F,Me, i Pr, t Bu, and Ph, where optionally one or more hydrogen atoms are independently selected from deuterium, Me, i Pr, t Substituted with Bu and Ph, wherein optionally, the optional substituent R a , R b , R d , R 1 and R 2 are, independently of each other, R a , R b , R d , R 1 and R 2 together with one or more adjacent substituents selected from: Hydrogen, deuterium, Me, i Pr, t Bu, CN, CF 3 , F, and Ph, where optionally one or more hydrogen atoms are independently selected from deuterium, Me, i Pr, t Substituted with Bu and Ph, wherein the optionally formed fused ring system consisting of the structure according to formula D1 and the attached ring formed by adjacent substituents contains a total of 13 to 30 ring atoms, preferably 16 to 30 ring atoms; a is an integer, 0 or 1; b is an integer, in each case 0 or 1, where both b are always identical; where when integer a is 1, both integers b are 0, and when both integers b are 1, integer a is 0, Q 1 are in each case, independently of one another, nitrogen (N), CR 6 and CR 7 provided that in formula AI, two adjacent groups Q 1 are not nitrogen (N), and here, the group Q of the formula AI 1 If none of the groups is nitrogen (N), the group Q 1 At least one of them is CR 7 and Q 2 are, in each case independently of one another, nitrogen (N) and CR 6 with the proviso that in formulae A-II and A-III, at least one group Q 2 is nitrogen (N) and two adjacent groups Q 2 are not nitrogen (N), R 6 and R 8 are, in each occurrence, independently selected from the group consisting of: Hydrogen, deuterium, N(R 9 ) 2 , OR 9 , Si(R 9 ) 3 , C.F. 3 ,C.N.,F. Optionally, one or more substituents R 9 C replaced with 1 -C 5 Alkyl, Optionally, one or more substituents R 9 C replaced with 6 -C 18 Aryl, and Optionally, one or more substituents R 9 C replaced with 3 -C 17 Heteroaryl, R 9 are, in each occurrence, independently selected from the group consisting of: Hydrogen, deuterium, Me, i Pr, t Bu, C.F. 3 ,CN,F,N(Ph) 2 , and Ph, where optionally one or more hydrogen atoms are independently selected from deuterium, Me, i Pr, t Bu, Ph, CN, CF 3 or replaced by F, R 7 are, in each case independently of one another, CN, CF 3 and a structure according to formula EWG-I,

[0324] [Chemical formula EWG-I] JPEG2025510014000032.jpg25170

[0325] Here, R X is R 6 where at least one R X The group is CN or CF 3 and wherein in formula A-IV, two adjacent groups R 8 optionally forms an aromatic ring, which is fused to the structure of formula A-IV and is optionally substituted with one or more substituents independently selected from the group consisting of: Hydrogen, deuterium, Me, i Pr, t Bu, and Ph, where optionally one or more hydrogen atoms are independently selected from deuterium, Me, i Pr, t Substituted with Bu, Ph, wherein optionally the fused ring system thus formed contains a total of 9 to 18 ring atoms; Q 3 are, in each case independently of one another, nitrogen (N) and CR 12 , with the proviso that at least one Q 3 is nitrogen (N), R 11 are, in each occurrence, independently of each other, a single bond attachment site linking the first or second chemical moiety to a third chemical moiety, or are, independently of each other, selected from the group consisting of: Hydrogen, deuterium, Me, i Pr, t Bu, and Deuterium, Me, i Pr, t Ph optionally substituted with one or more substituents independently selected from the group consisting of Bu and Ph; R 12 is R 6 It is defined as wherein the maximum number of first and second chemical moieties attached to a third chemical moiety is determined by the number of binding sites available on the third chemical moiety (i.e., the number of substituents R 11 (Preferably, according to the above provisions, each TADF material E B comprises at least one first chemical moiety, at least one second chemical moiety, and exactly one third chemical moiety).

[0326] In a more preferred embodiment of the present invention, Z 2 are, in each case independently of one another, a direct bond, CR 1 R 2 , C=O, NR 1 , O, SiR 1 R 2 , S, S(O) and S(O)2 is selected from the group consisting of R a , R b and R d are, in each occurrence, independently selected from the group consisting of: Hydrogen, deuterium, N(R 3 ) 2 , OR 3 , Si(R 3 ) 3 , C.F. 3 ,CN,Me, i Pr, t Bu, Ph, where optionally one or more hydrogen atoms are independently selected from deuterium, Me, i Pr, t Substituted with Bu and Ph, carbazolyl, where optionally one or more hydrogen atoms are independently selected from deuterium, Me, i Pr, t Substituted with Bu and Ph, R 1 and R 2 are, in each occurrence, independently selected from the group consisting of: Hydrogen, Deuterium, OR 3 , Si(R 3 ) 3 , Optionally, one or more substituents R 3 C replaced with 1 -C 5 Alkyl, Optionally, one or more substituents R 3 C replaced with 6 -C 18 Aryl, R 3 are, in each occurrence, independently selected from the group consisting of: Hydrogen, deuterium, CF 3 ,CN,F,Me, i Pr, t Bu, and Ph, where optionally one or more hydrogen atoms are independently selected from deuterium, Me, i Pr, t Substituted with Bu and Ph, wherein optionally, the optional substituent R a , R b , R d , R 1 and R 2 are, independently of each other, R a , R b , R d , R 1 and R 2 together with one or more adjacent substituents selected from: Hydrogen, deuterium, Me, i Pr, t Bu, CN, CF 3 , F, and Ph, where optionally one or more hydrogen atoms are independently selected from deuterium, Me, i Pr, t Substituted with Bu and Ph, wherein the optionally formed fused ring system consisting of the structure according to formula D1 and the attached ring formed by adjacent substituents contains a total of 13 to 30 ring atoms, preferably 16 to 30 ring atoms; a is an integer, 0 or 1; b is an integer, in each case 0 or 1, where both b are always identical; where when integer a is 1, both integers b are 0, and when both integers b are 1, integer a is 0, Q 1 are in each case, independently of one another, nitrogen (N), CR 6 and CR 7 provided that in formula AI, two adjacent groups Q 1 are not nitrogen (N), and here, the group Q of the formula AI 1 If none of the groups is nitrogen (N), the group Q 1 At least one of them is CR 7 and Q 2are, in each case independently of one another, nitrogen (N) and CR 6 with the proviso that in formulae A-II and A-III, at least one group Q 2 is nitrogen (N) and two adjacent groups Q 2 are not nitrogen (N), R 6 and R 8 are, in each occurrence, independently selected from the group consisting of: Hydrogen, Deuterium, OPh, N(Ph) 2 , Si(Me) 3 , Si(Ph) 3 , C.F. 3 ,CN,F,Me, i Pr, t Bu, Ph, where optionally one or more hydrogen atoms are independently selected from deuterium, Me, i Pr, t Substituted with Bu and Ph, carbazolyl, where optionally one or more hydrogen atoms are independently selected from deuterium, Me, i Pr, t Substituted with Bu and Ph, R 7 are, in each case independently of one another, CN, CF 3 and a structure according to formula EWG-I,

[0327] [Chemical formula EWG-I] JPEG2025510014000033.jpg25170

[0328] Here, R X is R 6 where at least one R X The group is CN or CF 3 and wherein in formula A-IV, two adjacent groups R 8 optionally forms an aromatic ring, which is fused to the structure of formula A-IV and is optionally substituted with one or more substituents independently selected from the group consisting of: Hydrogen, deuterium, Me,i Pr, t Bu, and Ph, where optionally one or more hydrogen atoms are independently selected from deuterium, Me, i Pr, t Substituted with Bu, Ph, wherein optionally the fused ring system thus formed contains a total of 9 to 18 ring atoms; Q 3 are, in each case independently of one another, nitrogen (N) and CR 12 , with the proviso that at least one Q 3 is nitrogen (N), R 11 are, in each occurrence, independently of each other, a single bond attachment site linking the first or second chemical moiety to a third chemical moiety, or are, independently of each other, selected from the group consisting of: Hydrogen, deuterium, Me, i Pr, t Bu, and Deuterium, Me, i Pr, t Ph optionally substituted with one or more substituents independently selected from the group consisting of Bu and Ph; R 12 is R 6 It is defined as wherein the maximum number of first and second chemical moieties attached to a third chemical moiety is determined by the number of binding sites available on the third chemical moiety (i.e., the number of substituents R 11 (Preferably, according to the above provisions, each TADF material E B comprises at least one first chemical moiety, at least one second chemical moiety, and exactly one third chemical moiety).

[0329] In a more preferred embodiment of the present invention, Z 2 are, in each case independently of one another, a direct bond, CR 1 R 2 , C=O, NR 1 , O, SiR 1 R2 , S, S(O) and S(O) 2 is selected from the group consisting of R a , R b and R d are, in each occurrence, independently selected from the group consisting of: Hydrogen, Deuterium, N(Ph) 2 , Si(Me) 3 , Si(Ph) 3 , C.F. 3 ,CN,Me, i Pr, t Bu, Ph, where optionally one or more hydrogen atoms are independently selected from deuterium, Me, i Pr, t is substituted with Bu and Ph, and carbazolyl, where optionally one or more hydrogen atoms are independently selected from deuterium, Me, i Pr, t Substituted with Bu and Ph, R 1 and R 2 are, in each occurrence, independently selected from the group consisting of: Hydrogen, deuterium, Me, i Pr, t Bu, Ph, where optionally one or more hydrogen atoms are independently selected from deuterium, Me, i Pr, t Substituted with Bu and Ph, wherein optionally, the optional substituent R a , R b , R d , R 1 and R 2 are, independently of each other, R a , R b , R d , R 1 and R 2together with one or more adjacent substituents selected from: Hydrogen, deuterium, Me, i Pr, t Bu, CN, CF 3 , F, and Ph, where optionally one or more hydrogen atoms are independently selected from deuterium, Me, i Pr, t Substituted with Bu and Ph, wherein the optionally formed fused ring system consisting of the structure according to formula D1 and the attached ring formed by adjacent substituents contains a total of 13 to 30 ring atoms, preferably 16 to 30 ring atoms; a is an integer, 0 or 1; b is an integer, in each case 0 or 1, where both b are always identical; where when integer a is 1, both integers b are 0, and when both integers b are 1, integer a is 0, Q 1 are in each case, independently of one another, nitrogen (N), CR 6 and CR 7 provided that in formula AI, two adjacent groups Q 1 are not nitrogen (N), and here, the group Q of the formula AI 1 If none of the groups is nitrogen (N), the group Q 1 At least one of them is CR 7 and Q 2 are, in each case independently of one another, nitrogen (N) and CR 6 with the proviso that in formulae A-II and A-III, at least one group Q 2 is nitrogen (N) and two adjacent groups Q 2 are not nitrogen (N), R 6 and R 8are, in each occurrence, independently selected from the group consisting of: Hydrogen, Deuterium, N(Ph) 2 , Si(Me) 3 , Si(Ph) 3 , Me, i Pr, t Bu, Ph, where optionally one or more hydrogen atoms are independently selected from deuterium, Me, i Pr, t Substituted with Bu and Ph, carbazolyl, where optionally one or more hydrogen atoms are independently selected from deuterium, Me, i Pr, t Substituted with Bu and Ph, R 7 are, in each case independently of one another, CN, CF 3 and a structure according to formula EWG-I,

[0330] [Chemical formula EWG-I] JPEG2025510014000034.jpg25170

[0331] Here, R X is R 6 However, CN or CF 3 where at least one R X The group is CN or CF 3 and wherein in formula A-IV, two adjacent groups R 8 optionally forms an aromatic ring, which is fused to the structure of formula A-IV and is optionally substituted with one or more substituents independently selected from the group consisting of: Hydrogen, deuterium, Me, i Pr, t Bu, and Ph, where optionally one or more hydrogen atoms are independently selected from deuterium, Me, i Pr, t Substituted with Bu, Ph, wherein optionally the fused ring system thus formed contains a total of 9 to 18 ring atoms; Q 3 are, in each case independently of one another, nitrogen (N) and CR 12 , with the proviso that at least one Q 3 is nitrogen (N), R 11 are, in each occurrence, independently of each other, a single bond attachment site linking the first or second chemical moiety to a third chemical moiety, or are, independently of each other, selected from the group consisting of: Hydrogen, deuterium, Me, i Pr, t Bu, and Deuterium, Me, i Pr, t Ph optionally substituted with one or more substituents independently selected from the group consisting of Bu and Ph; R 12 is R 6 It is defined as wherein the maximum number of first and second chemical moieties attached to a third chemical moiety is determined by the number of binding sites available on the third chemical moiety (i.e., the number of substituents R 11 (Preferably, according to the above provisions, each TADF material E B comprises at least one first chemical moiety, at least one second chemical moiety, and exactly one third chemical moiety).

[0332] In a particularly preferred embodiment of the present invention, Z 2 are, in each case independently of one another, a direct bond, CR 1 R 2 , C=O, NR 1 , O, SiR 1 R 2 , S, S(O) and S(O) 2 is selected from the group consisting of R a , R b and R d are, in each occurrence, independently selected from the group consisting of: Hydrogen, deuterium, CF 3,CN,Me, i Pr, t Bu, and Ph, where optionally one or more hydrogen atoms are independently selected from deuterium, Me, i Pr, t Substituted with Bu and Ph, R 1 and R 2 are, in each occurrence, independently selected from the group consisting of: Hydrogen, deuterium, Me, i Pr, t Bu, and Ph, where optionally one or more hydrogen atoms are independently selected from deuterium, Me, i Pr, t Substituted with Bu and Ph, wherein optionally, the optional substituent R a , R b , R d , R 1 and R 2 are, independently of each other, R a , R b , R d , R 1 and R 2 together with one or more adjacent substituents selected from: Hydrogen, deuterium, Me, i Pr, t Bu, CN, CF 3 , and Ph, where optionally one or more hydrogen atoms are independently selected from deuterium, Me, i Pr, t Substituted with Bu and Ph, wherein the optionally formed fused ring system consisting of the structure according to formula D1 and the attached ring formed by adjacent substituents contains a total of 13 to 30 ring atoms, preferably 16 to 30 ring atoms; a is an integer, 0 or 1; b is an integer, in each case 0 or 1, where both b are always identical; where when integer a is 1, both integers b are 0, and when both integers b are 1, integer a is 0, Q 1 are in each case, independently of one another, nitrogen (N), CR 6 and CR 7 provided that in formula AI, two adjacent groups Q 1 are not nitrogen (N), and here, the group Q of the formula AI 1 If none of the groups is nitrogen (N), the group Q 1 At least one of them is CR 7 and Q 2 are, in each case independently of one another, nitrogen (N) and CR 6 with the proviso that in formulae A-II and A-III, at least one group Q 2 is nitrogen (N) and two adjacent groups Q 2 are not nitrogen (N), R 6 and R 8 are, in each occurrence, independently selected from the group consisting of: Hydrogen, Deuterium, N(Ph) 2 , Me, i Pr, t Bu, Ph, where optionally one or more hydrogen atoms are independently selected from deuterium, Me, i Pr, t Substituted with Bu and Ph, carbazolyl, where optionally one or more hydrogen atoms are independently selected from deuterium, Me, i Pr, t Substituted with Bu and Ph, R 7 are, in each case independently of one another, CN, CF 3 and a structure according to formula EWG-I,

[0333] [Chemical formula EWG-I] JPEG2025510014000035.jpg25170

[0334] Here, R X is R 6 However, CN or CF 3 where at least one R X The group is CN or CF 3 and wherein in formula A-IV, two adjacent groups R 8 optionally forms an aromatic ring, which is fused to the structure of formula A-IV and is optionally substituted with one or more substituents independently selected from the group consisting of: Hydrogen, deuterium, Me, i Pr, t Bu, and Ph, where optionally one or more hydrogen atoms are independently selected from deuterium, Me, i Pr, t Substituted with Bu, Ph, wherein optionally the fused ring system thus formed contains a total of 9 to 18 ring atoms; Q 3 are, in each case independently of one another, nitrogen (N) and CR 12 , with the proviso that at least one Q 3 is nitrogen (N), R 11 are, in each occurrence, independently of each other, a single bond attachment site linking the first or second chemical moiety to a third chemical moiety, or are, independently of each other, selected from the group consisting of: Hydrogen, deuterium, Me, i Pr, t Bu, and Deuterium, Me, i Pr, t Ph optionally substituted with one or more substituents independently selected from the group consisting of Bu and Ph; R 12 is R 6 It is defined as wherein the maximum number of first and second chemical moieties attached to a third chemical moiety is determined by the number of binding sites available on the third chemical moiety (i.e., the number of substituents R 11 (Preferably, according to the above provisions, each TADF material E B comprises at least one first chemical moiety, at least one second chemical moiety, and exactly one third chemical moiety).

[0335] In a preferred embodiment of the present invention, a is always 1 and b is always 0.

[0336] In a preferred embodiment of the present invention, Z 2 is a direct bond in each case.

[0337] In a preferred embodiment of the present invention, R a is hydrogen in each case.

[0338] In a preferred embodiment of the present invention, R a and R d is hydrogen in each case.

[0339] In a preferred embodiment of the present invention, Q 3 is nitrogen (N) in each case.

[0340] In one embodiment of the invention, in formula EWG-I, at least one R X The group is CN.

[0341] In a preferred embodiment of the invention, in formula EWG-I, exactly one R X The group is CN.

[0342] In a preferred embodiment of the invention, in formula EWG-I, exactly one R X The group is CN, and in formula EWG-I, R X The base is CF 3 isn't it.

[0343] Examples of first chemical moieties according to the present invention are given below, but this is not meant to limit the invention to these examples:

[0344] JPEG2025510014000036.jpg24170JPEG2025510014000037.jpg21170JPEG2025510014000038.jpg22170JPEG2025510014000039.jpg47170 JPEG2025510014000040.jpg20170JPEG2025510014000041.jpg23170JPEG2025510014000042.jpg36170JPEG2025510014000043.jpg30170 JPEG2025510014000044.jpg26170JPEG2025510014000045.jpg32170JPEG2025510014000046.jpg26170JPEG2025510014000047.jpg31170 JPEG2025510014000048.jpg26170JPEG2025510014000049.jpg30170JPEG2025510014000050.jpg27170JPEG2025510014000051.jpg23170

[0345] Here, the above definitions apply.

[0346] Examples of second chemical moieties according to the present invention are given below, but this is not meant to limit the invention to these examples:

[0347] JPEG2025510014000052.jpg63170JPEG2025510014000053.jpg22170JPEG2025510014000054.jpg23170JPEG2025510014000055.jpg22170JPEG2025510014 000056.jpg20170JPEG2025510014000057.jpg19170JPEG2025510014000058. jpg18170JPEG2025510014000059.jpg18170JPEG2025510014000060.jpg20170

[0348] Here, the above definitions apply.

[0349] In a preferred embodiment of the present invention, each TADF material E B is the chemical formula E B -I, E B -NO B -III, E B -IV, E B -V, E B -VI,E B -VII, E B -VIII, E B -IX, E B -X and E B -XI:

[0350] [Chemical formula E B -I] JPEG2025510014000061.jpg44170

[0351] [Chemical formula E B -II] JPEG2025510014000062.jpg68170

[0352] [Chemical formula E B -III] JPEG2025510014000063.jpg46170

[0353] [Chemical formula E B -IV] JPEG2025510014000064.jpg46170

[0354] [Chemical formula E B -V] JPEG2025510014000065.jpg36170

[0355] [Chemical formula E B -VI] JPEG2025510014000066.jpg67170

[0356] [Chemical formula E B -VII] JPEG2025510014000067.jpg68170

[0357] [Chemical formula E B -VIII] JPEG2025510014000068.jpg67170

[0358] [Chemical formula E B -IX] JPEG2025510014000069.jpg61170

[0359] [Chemical formula E B -X] JPEG2025510014000070.jpg80170

[0360] [Chemical formula E B -XI] JPEG2025510014000071.jpg102170

[0361] Where: R 13 is R 11 It is defined as follows, where R 13 is not a single bond attachment site linking the first or second chemical moiety to a third chemical moiety, R Y CN and CF 3 or R Ycomprises or consists of a structure according to the formula BN-I,

[0362] [Chemical formula BN-I] JPEG2025510014000072.jpg25170

[0363] This is because the single bond represented by the dashed line gives the chemical formula E B -I, E B -NO B -III, E B -IV, E B -V, E B -VI,E B -VII, E B -VIII or E B -IX, where exactly one R BN The group is CN, and the other two R BN Both groups are hydrogen (H), Otherwise the above definitions apply.

[0364] In a preferred embodiment of the present invention, R 13 is hydrogen in each case.

[0365] In one embodiment of the present invention, R Y is CN in each case.

[0366] In one embodiment of the present invention, R Y In each case, CF 3 It is.

[0367] In one embodiment of the present invention, R Y is in each case the structure represented by the chemical formula BN-I.

[0368] In a preferred embodiment of the present invention, R Y are each independently selected from CN and the structure represented by the chemical formula BN-I.

[0369] In a preferred embodiment of the present invention, each TADF material EB is a chemical formula E to which the above definitions apply. B -I, E B -NO B -III, E B -IV, E B -V, E B -VI,E B -VII and E B -X.

[0370] In a preferred embodiment of the present invention, each TADF material E B is a chemical formula E to which the above definitions apply. B -I, E B -III, E B -V, E B -VI and E B -X.

[0371] TADF material E for use in an organic electroluminescent device according to the present invention B Examples of TADF materials E are shown below, but this is because only the examples shown are suitable TADF materials E in the context of the present invention. B This does not mean that.

[0372] Chemical formula E B -I by TADF material E B Non-limiting examples are shown below:

[0373] JPEG2025510014000073.jpg114170JPEG2025510014000074.jpg39170JPEG202 5510014000075.jpg66170JPEG2025510014000076.jpg103170JPEG20255100140 00077.jpg119170JPEG2025510014000078.jpg59170JPEG2025510014000079.j pg50170JPEG2025510014000080.jpg140170JPEG2025510014000081.jpg129170

[0374] Chemical formula E B TADF Material E by -II B Non-limiting examples are shown below:

[0375] JPEG2025510014000082.jpg60170JPEG2025510014000083.jpg183170JPEG2025510014 000084.jpg50170JPEG2025510014000085.jpg235170JPEG2025510014000086.jpg65170

[0376] Chemical formula E B TADF Materials E by HT-III B Non-limiting examples are shown below:

[0377] JPEG2025510014000087.jpg126170JPEG2025510014000088.jpg119170JPEG2025510014000089.jpg51170JPEG2025510014000090.jpg230170

[0378] Chemical formula E B TADF Materials E by -IV B Non-limiting examples are shown below:

[0379] JPEG2025510014000091.jpg89170

[0380] Chemical formula E B -V based TADF material E B Non-limiting examples are shown below:

[0381] JPEG2025510014000092.jpg217170

[0382] Chemical formula E B TADF materials with -VI B Non-limiting examples are shown below:

[0383] JPEG2025510014000093.jpg222170

[0384] Chemical formula E B TADF Materials E by -VII B Non-limiting examples are shown below:

[0385] JPEG2025510014000094.jpg158170

[0386] Chemical formula E B TADF Materials E by . B Non-limiting examples are shown below:

[0387] JPEG2025510014000095.jpg114170

[0388] Chemical formula E B TADF Materials by E-IX B Non-limiting examples are shown below:

[0389] JPEG2025510014000096.jpg65170JPEG2025510014000097.jpg81170

[0390] Chemical formula E B TADF Materials by E-X B Non-limiting examples are shown below:

[0391] JPEG2025510014000098.jpg114170JPEG2025510014000099.jpg71170

[0392] Chemical formula E B TADF Materials E by -XI B Non-limiting examples are shown below:

[0393] JPEG2025510014000100.jpg55170

[0394] TADF material E BThe synthesis of is accomplished via standard reactions and reaction conditions known to the skilled artisan. Generally, in the first step, a coupling reaction, preferably a palladium catalyzed coupling reaction, is carried out to obtain a compound of formula E B -III, E B -IV and E B -TADF material E by any one of V B The synthesis of the compound is exemplified below:

[0395] JPEG2025510014000101.jpg42170

[0396] E1 is any boronic acid (R B =H) or the corresponding boronic ester (R B = alkyl or aryl), in particular two R B can form a ring to provide, for example, a boronic acid pinacol ester. As a second reactant, E2 is used, where Hal represents a halogen, which is I, Br or Cl, but is preferably Br. The reaction conditions for such palladium-catalyzed coupling reactions are known to those skilled in the art, for example from WO2017 / 005699, and it is known that the reactive groups of E1 and E2 can be interchanged to optimize the reaction yield, as shown below:

[0397] JPEG2025510014000102.jpg43170

[0398] In the second step, the TADF molecule is obtained via reaction of the nitrogen heterocycle with an aryl halide, preferably an aryl fluoride E3, in an aromatic nucleophilic substitution. Typical conditions include the use of a base, such as, for example, tripotassium phosphate or sodium hydride, in an aprotic polar solvent, such as, for example, dimethylsulfoxide (DMSO) or N,N-dimethylformamide (DMF).

[0399] JPEG2025510014000103.jpg45170

[0400] In particular, the donor molecule E4 may be a 3,6-substituted carbazole (e.g., 3,6-dimethylcarbazole, 3,6-diphenylcarbazole, 3,6-di-tert-butylcarbazole), a 2,7-substituted carbazole (e.g., 2,7-dimethylcarbazole, 2,7-diphenylcarbazole, 2,7-di-tert-butylcarbazole), a 1,8-substituted carbazole (e.g., 1,8-dimethylcarbazole, 1,8-diphenylcarbazole, 1 ,8-di-tert-butylcarbazole), 1-substituted carbazoles (e.g., 1-methylcarbazole, 1-phenylcarbazole, 1-tert-butylcarbazole), 2-substituted carbazoles (e.g., 2-methylcarbazole, 2-phenylcarbazole, 2-tert-butylcarbazole), or 3-substituted carbazoles (e.g., 3-methylcarbazole, 3-phenylcarbazole, 3-tert-butylcarbazole).

[0401] Alternatively, halogen substituted carbazoles, especially 3-bromocarbazole, are used as E4.

[0402] In a subsequent reaction, a boronic ester or acid functionality can be illustratively introduced at the position of one or more halogen substituents introduced via E4 to generate the corresponding carbazol-3-yl-boronic ester or carbazol-3-yl-boronic acid, for example, via reaction with bis(pinacolato)diboron (CAS No. 73183-34-3). The corresponding halogenated reactant, for example, R a -Hal, preferably R a -Cl and R a In place of the boronic ester or acid group, one or more substituents R a , R b or R d may be introduced.

[0403] Alternatively, the substituent R a [R a -B(OH) 2 ], Rb [R b -B(OH) 2 ] or R d [R d -B(OH) 2 or a corresponding boronic acid ester, one or more substituents R a , R b or R d may be introduced.

[0404] Further TADF materials B can be obtained in a similar manner. B may also be obtained by any alternative synthetic route suitable for the purpose.

[0405] An alternative synthetic route may involve the introduction of the nitrogen heterocycle via copper or palladium catalyzed coupling to an aryl halide or aryl pseudohalide, preferably an aryl bromide, aryl iodide, aryl triflate, or aryl tosylate.

[0406] Phosphorescent material P B In the context of the present invention, the phosphorescent material P B utilizes the intramolecular spin-orbit interaction (heavy atom effect) induced by metal atoms to obtain emission from triplets.

[0407] In general, it is understood that all phosphorescent complexes used in organic electroluminescent devices in the prior art can also be used in the organic electroluminescent devices according to the invention.

[0408] Phosphorescent material P used in organic electroluminescence devices BIt is common knowledge for a person skilled in the art that phosphorescent materials are Ir, Pt, Pd, Au, Os, Eu, Ru, Re, Ag and Cu, preferably Ir, Pt and Pd, more preferably Ir and Pt complexes in the context of the present invention. A person skilled in the art knows what materials are suitable as phosphorescent materials in organic electroluminescent devices and how to synthesize them. Furthermore, a person skilled in the art is familiar with the design principles of phosphorescent complexes for use in organic electroluminescent devices and knows how to adjust the emission of the complexes through structural changes.

[0409] See for example: C.-L.Ho, H.Li, W.-Y.Wong, Journal of Organometallic Chemistry 2014, 751, 261, DOI: 10.1016 / j.jorganchem.2013.09.035; T.Fleetham, G.Li, J.Li, Advanced Science News 2017, 29, 1601861, DOI: 10.1002 / adma.201601861; ARBMYusoff, AJHuckaba, MKNazeeruddin, Topics in Current Chemistry(Z) 2017, 375:39, 1, DOI: 10.1007 / s41061-017-0126-7; T.-Y.Li, J.Wuc, Z.-G.Wua, Y.-X.Zheng, J.-L.Zuo, Y.Pan, Coordination Chemistry Reviews 2018, 374, 55, DOI: 10.1016 / j.ccr.2018.06.014.

[0410] For example, US2020274081(A1), US20010019782(A1), US20020034656(A1), US20030138657(A1), US2005123791(A1), US20060065890(A1), US20060134462(A1), 070034863(A1), US20070111026(A1), US2007034863(A1), US2007138437(A1), US20080020237(A1), US20080297033(A1), US2008210930(A1), US 20090115322(A1), US2009104472(A1), US20100244004(A1), 10105902(A1 ), US20110057559(A1), US2011215710(A1), US2012292601(A1), US2013165 653(A1), US20140246656(A1), US20030068526(A1), US20050123788(A1), US2005260449(A1), US20060127696(A1), 060202194(A1), US20070087321( A1), US20070190359(A1), US2007104979(A1), US2007224450(A1), US2008 0233410(A1), US200805851(A1), US20090039776(A1), US20090179555(A1) ), US20100090591(A1), 00295032(A1), US20030072964(A1), US200502446 73(A1), US20060008670(A1), US20060134459(A1), US20060251923(A1), US 20070103060(A1), US20070231600(A1), US2007104980(A1), US200727893 6(A1), 0080261076(A1), US2008161567(A1), US20090108737(A1), US20090 85476(A1), US20100148663(A1), US2010102716(A1), US2010270916(A1), US20110204333(A1), US2011285275(A1), US2013033172(A1), 334521(A1),US2014103305(A1), US2003068536(A1), US2003085646(A1), US2006228581(A1), US2006197077(A1), US2011114922(A1), US2011114922(A1), US2003054198(A1) and EP2730583(A1) are intended to refer to phosphorescent materials P, B This disclosure discloses phosphorescent materials that can be used in organic electroluminescent devices that incorporate the phosphorescent materials described in one of the named references.

[0411] As shown in US2020274081(A1), examples of phosphorescent complexes for use in organic electroluminescent devices such as those of the present invention include the complexes shown below. Again, it is understood that the present invention is not limited to these examples.

[0412] JPEG2025510014000104.jpg137170JPEG2025510014000105.jpg43170JPEG2025510014 000106.jpg151170JPEG2025510014000107.jpg57170JPEG2025510014000108.jpg98170 JPEG2025510014000109.jpg87170JPEG2025510014000110.jpg196170JPEG20255100140 00111.jpg51170JPEG2025510014000112.jpg152170JPEG2025510014000113.jpg48170J PEG2025510014000114.jpg156170JPEG2025510014000115.jpg54170JPEG202551001400 0116.jpg112170JPEG2025510014000117.jpg103170JPEG2025510014000118.jpg112170 JPEG2025510014000119.jpg105170JPEG2025510014000120.jpg192170JPEG2025510014 000121.jpg54170JPEG2025510014000122.jpg200170JPEG2025510014000123.jpg41170

[0413] As mentioned above, a person skilled in the art can understand that any phosphorescent complex used in the prior art can be considered as a phosphorescent material P in the context of the present invention. B will recognize that it is suitable as

[0414] In one embodiment of the present invention, each phosphorescent material P B contains iridium (Ir).

[0415] In one embodiment of the present invention, at least one phosphorescent material P B , preferably each phosphorescent material P B is an organometallic complex containing iridium (Ir) or platinum (Pt).

[0416] In one embodiment of the present invention, at least one phosphorescent material P B , preferably each phosphorescent material P B is an organometallic complex containing iridium (Ir).

[0417] In one embodiment of the present invention, at least one phosphorescent material P B , preferably each phosphorescent material P B is an organometallic complex containing platinum (Pt).

[0418] In addition, phosphorescent material P B Non-limiting examples of the compound represented by the general chemical formula P B -I, which includes compounds represented by the formula:

[0419] [Chemical formula P B -I] JPEG2025510014000124.jpg23170

[0420] Chemical formula P B In I, M is selected from the group consisting of Ir, Pt, Au, Eu, Ru, Re, Ag and Cu; n is an integer from 1 to 3; X 2 and Y 1 together in each case, independently of one another, form a bidentate monoanionic ligand.

[0421] In one embodiment of the present invention, each phosphorescent material P B is the chemical formula P B -I contains or consists of a structure:

[0422] [Chemical formula P B -I] JPEG2025510014000125.jpg23170

[0423] where M is selected from the group consisting of Ir, Pt, Au, Eu, Ru, Re, Ag and Cu; n is an integer from 1 to 3; X 2 and Y1 together in each case, independently of one another, form a bidentate monoanionic ligand.

[0424] Chemical formula P B An example of a compound represented by -I is the compound represented by the following chemical formula P B -II or chemical formula P B -III, including compounds represented by the formula:

[0425] JPEG2025510014000126.jpg35170P B -II P B -III

[0426] Chemical formula P B -II and P B In -III, X' is an aromatic ring carbon (C)-bonded to M, and Y' is a ring coordinated to M via nitrogen (N) to form a ring.

[0427] X' and Y' can be bonded together to form a new ring. B In -III, Z 3 is a bidentate ligand with two oxygens (O). It has the chemical formula P B -II and P B In the above-mentioned embodiment, from the viewpoints of high efficiency and long life, M is preferably Ir.

[0428] Chemical formula P B -II and P B In the above-mentioned formula III, the aromatic ring X′ is, for example, C 6 -C 30 Aryl, preferably C 6 -C 16 Aryl, more preferably C 6 -C 12 Aryl, particularly preferably C 6 -C 10 aryl, where X′ in each case optionally represents one or more substituents R E is replaced by.

[0429] Chemical formula P B -II and PB In the formula III, Y' is, for example, C 2 -C 30 Heteroaryl, preferably C 2 -C 25 Heteroaryl, more preferably C 2 -C 20 Heteroaryl, more preferably C 2 -C 15 Heteroaryl, particularly preferably C 2 -C 10 heteroaryl, where Y′ in each occurrence is optionally one or more substituents R E Y' may also be, for example, optionally substituted with one or more substituents R E C replaced by 1 -C 5 It may be heteroaryl.

[0430] Chemical formula P B -II and P B In the above-III, a bidentate ligand Z having two oxygen atoms (O) is 3 For example, C with two oxygens 2 -C 30 Bidentate ligands, preferably C with two oxygens 2 -C 25 Bidentate ligands, more preferably C with two oxygens 2 -C 20 Bidentate ligands, more preferably C with two oxygens 2 -C 15 Bidentate ligands, particularly preferably C with two oxygens 2 -C 10 is a bidentate ligand, where Z 3 may in each case optionally be one or more substituents R E Also, Z 3 may, for example, optionally contain one or more substituents R E C with two oxygens substituted with 2 -C 5 It may also be a bidentate ligand.

[0431] R Eare, in each occurrence, independently selected from the group consisting of: Hydrogen, deuterium, N(R 5E ) 2 , OR 5E , S.R. 5E , Si(R 5E ) 3 , C.F. 3 , CN, halogen, C 1 -C 40 Alkyl, This can be optionally substituted with one or more substituents R 5E is replaced by Here, one or more non-adjacent CH 2 The group is optionally R 5E C=CR 5E , C≡C, Si(R 5E ) 2 , Ge(R 5E ) 2 , Sn(R 5E ) 2 , C=O, C=S, C=Se, C=NR 5E , P(=O)(R 5E ), SO, SO 2 , N.R. 5E , O, S or CONR 5E is replaced by C 1 -C 40 Thioalkoxy, This can be optionally substituted with one or more substituents R 5E is replaced by Here, one or more non-adjacent CH 2 The group is optionally R 5E C=CR 5E , C≡C, Si(R 5E ) 2 , Ge(R 5E ) 2 , Sn(R 5E ) 2 , C=O, C=S, C=Se, C=NR 5E , P(=O)(R 5E ), SO, SO 2 , N.R. 5E , O, S or CONR 5E is replaced by Optionally, one or more substituents R5E C replaced with 6 -C 60 Aryl, and Optionally, one or more substituents R 5E C replaced with 3 -C 57 Heteroaryl, R 5E are, in each occurrence, independently selected from the group consisting of: Hydrogen, deuterium, N(R 6E ) 2 , OR 6E , S.R. 6E , Si(R 6E ) 3 , C.F. 3 ,C.N.,F. C 1 -C 40 Alkyl, This can be optionally substituted with one or more substituents R 6E is replaced by Here, one or more non-adjacent CH 2 The group is optionally R 6E C=CR 6E , C≡C, Si(R 6E ) 2 , Ge(R 6E ) 2 , Sn(R 6E ) 2 , C=O, C=S, C=Se, C=NR 6E , P(=O)(R 6E ), SO, SO 2 , N.R. 6E , O, S or CONR 6E is replaced by Optionally, one or more substituents R 6E C replaced with 6 -C 60 Aryl, and Optionally, one or more substituents R 6E C replaced with 3 -C 57 Heteroaryl, R 6E are, in each occurrence, independently selected from the group consisting of: Hydrogen, deuterium, OPh, CF 3 ,C.N.,F. C 1 -C 5 Alkyl, wherein optionally one or more hydrogen atoms are independently selected from deuterium, CN, CF 3 or replaced by F, C 1 -C 5 Alkoxy, wherein optionally one or more hydrogen atoms are independently selected from deuterium, CN, CF 3 or replaced by F, C 1 -C 5 Thioalkoxy, wherein optionally one or more hydrogen atoms are independently selected from deuterium, CN, CF 3 or replaced by F, Optionally, 1 or more C 1 -C 5 C substituted with alkyl substituents 6 -C 18 Aryl, Optionally, 1 or more C 1 -C 5 C substituted with alkyl substituents 3 -C 17 Heteroaryl, N(C 6 -C 18 Aryl) 2 , N(C 3 -C 17 Heteroaryl) 2 , and N(C 3 -C 17 Heteroaryl)(C 6 -C 18 aryl), Substituent R E , R 5E or R 6E are, independently of one another, one or more substituents R E , R 5E , R 6E and / or X', Y' and Z 3 can selectively form monocyclic or polycyclic, aliphatic, aromatic, heteroaromatic and / or benzo-fused ring systems.

[0432] Chemical formula P B Examples of compounds represented by the formula I include Ir(ppy) 3 , Ir(ppy) 2 (acac), Ir(mppy) 3 , Ir(PPy) 2 (m-bppy), BtpIr(acac), Ir(btp) 2 (acac), Ir(2-phq) 3 , Hex-Ir(phq) 3 , Ir(fbi) 2 (acac), fac-tris(2-(3-p-xylyl)phenyl)pyridine iridium(III), Eu(dbm) 3 (Phen), Ir(piq) 3 , Ir(piq) 2 (acac), Ir(Fiq) 2 (acac), Ir(Flq) 2 (acac), Ru(dtb-bpy) 3 2(PF6), Ir(2-phq) 3 , Ir(BT) 2 (acac), Ir(DMP) 3 , Ir(Mpq) 3 , Ir(phq) 2 tpy, fac-Ir(ppy) 2 Pc, Ir(dp)PQ 2 , Ir(Dpm)(Piq) 2 , Hex-Ir(piq) 2 (acac), Hex-Ir(piq) 3 , Ir(dmpq) 3 , Ir(dmpq) 2 (acac), FPQIrpic, etc.

[0433] Chemical formula P B Another example of the compound represented by the formula P B -II-1~P B In the structural formula, "Me" represents a methyl group.

[0434] JPEG2025510014000127.jpg103170JPEG2025510014000128.jpg50170JPEG2025510014000129.jpg51170

[0435] Chemical formula P B Another example of the compound represented by the formula P B -III-1~P B -III-6, in which "Me" represents a methyl group.

[0436] JPEG2025510014000130.jpg98170

[0437] In addition, the iridium complexes described in US2003017361(A1), US2004262576(A1), WO2010027583(A1), US2019245153(A1), US2013119354(A1), and US2019233451(A1) can be used. In view of the high efficiency of phosphorescent materials, Ir(ppy) 3 and Hex-Ir(ppy) 3 is often used for green emission.

[0438] Small FWHM emitter S B In the context of the present invention, a small full width at half maximum (FWHM) emitter S B Generally, S is any emitter that has an emission spectrum exhibiting a FWHM of 0.25 eV or less (≦0.25) measured at room temperature (i.e., (approximately) 20° C.) from a spin-coated film having 1-5 wt. % of the emitter, particularly 2 wt. %, in poly(methyl methacrylate) PMMA. Alternatively, a small FWHM emitter S B The emission spectrum of is typically measured at room temperature (i.e., (approximately) 20 °C) with 0.001–0.2 mg / mL of the emitter S in dichloromethane or toluene. B can be measured in a solution.

[0439] In a preferred embodiment of the present invention, a small FWHM emitter S BAt room temperature, 1-5 wt%, especially 2 wt%, of the emitter S in PMMA is used. B The small FWHM emitter S is any emitter having an emission spectrum exhibiting a FWHM of ≦0.24 eV, more preferably ≦0.23 eV, and even more preferably ≦0.22 eV, ≦0.21 eV, or ≦0.20 eV, as measured from a spin-coated film having a small FWHM emitter S. B The emission spectrum of is typically measured at room temperature (i.e., (approximately) 20 °C) with 0.001–0.2 mg / mL of the emitter S in dichloromethane or toluene. B In another embodiment of the present invention, each small FWHM emitter S B indicates a FWHM of ≦0.19 eV, ≦0.18 eV, ≦0.17 eV, ≦0.16 eV, ≦0.15 eV, ≦0.14 eV, ≦0.13 eV, ≦0.12 eV, or ≦0.11 eV.

[0440] In one embodiment of the present invention, each small FWHM emitter S B At room temperature, (1 to 5% by weight, particularly 2% by weight) of the emitter S B When measured on PMMA, it emits light with an emission maximum in the wavelength range of 400 nm to 470 nm.

[0441] In one embodiment of the present invention, each small FWHM emitter S B At room temperature, (1 to 5% by weight, particularly 2% by weight) of the emitter S B When measured on PMMA, it emits light with an emission maximum in the wavelength range of 500 nm to 560 nm.

[0442] In one embodiment of the present invention, each small FWHM emitter S B At room temperature, (1 to 5 wt. %, especially 2 wt. % of emitter S B When measured on PMMA, it emits light with an emission maximum in the wavelength range of 610 nm to 665 nm.

[0443] In one embodiment of the present invention, each small FWHM emitter SB is 0.001–0.2 mg / mL of emitter S in dichloromethane or toluene at room temperature (i.e., (approximately) 20 °C). B It emits light having an emission maximum in the wavelength range of 400 nm to 470 nm, when measured at 1000 nm.

[0444] In one embodiment of the present invention, each small FWHM emitter S B is 0.001–0.2 mg / mL of emitter S in dichloromethane or toluene at room temperature (i.e., (approximately) 20 °C). B It emits light having an emission maximum in the wavelength range from 500 nm to 560 nm, when measured at 1000 nm.

[0445] In one embodiment of the present invention, each small FWHM emitter S B is 0.001–0.2 mg / mL of emitter S in dichloromethane or toluene at room temperature (i.e., (approximately) 20 °C). B It emits light having an emission maximum in the wavelength range of 610 nm to 665 nm, when measured at .

[0446] TADF material E contained in the light-emitting layer B of the organic electroluminescence device according to the present invention B is understood to be an emitter having an emission spectrum with a FWHM of 0.25 eV or less (≦0.25 eV). Optionally, the TADF material E contained in the light-emitting layer B of the organic electroluminescent device according to the present invention B also exhibit emission maxima in the aforementioned wavelength ranges (ie, 400 nm to 470 nm, 500 nm to 560 nm, 610 nm to 665 nm).

[0447] In one embodiment of the present invention, one of the relationships represented by the following formulas (23) to (25) applies: 440nm<λ max (S B )<470nm (23) 510nm<λ max (S B )<550nm (24) 610nm<λ max (S B )<665nm (25), Here, λ max (S B ) is defined in the context of the present invention as a small FWHM emitter S B Shows maximum emission.

[0448] In one embodiment, the above-mentioned relationships represented by formulas (23) to (25) apply to the materials contained in at least one light-emitting layer B of an organic electroluminescent device according to the present invention. In one embodiment, the above-mentioned relationships represented by formulas (23) to (25) apply to the materials contained in the same light-emitting layer B of an organic electroluminescent device according to the present invention.

[0449] In a preferred embodiment of the present invention, each small FWHM emitter S B is an organic emitter, which means in the context of the present invention that it does not contain any transition metal. Preferably, each small FWHM emitter S according to the present invention B is composed primarily of the elements hydrogen (H), carbon (C), nitrogen (N) and boron (B), but may also contain, for example, oxygen (O), silicon (Si), fluorine (F) and bromine (Br).

[0450] In a preferred embodiment of the present invention, each small FWHM emitter S B is a fluorescent emitter, which in the context of the present invention means that the emitter is capable of emitting light at room temperature upon electronic excitation (e.g. in an optoelectronic device according to the present invention), where the emissive excited state is a singlet state.

[0451] In one embodiment of the present invention, a small FWHM emitter S B At room temperature, (1 to 5 wt. %, especially 2 wt. % of emitter S B When measured on PMMA, it exhibits a photoluminescence quantum yield (PLQY) of more than 50%.

[0452] In a preferred embodiment of the present invention, a small FWHM emitter S B At room temperature, (1 to 5 wt. %, especially 2 wt. % of emitter S B When measured on PMMA, it exhibits a photoluminescence quantum yield (PLQY) of over 60%.

[0453] In a more preferred embodiment of the present invention, a small FWHM emitter S B At room temperature, (1 to 5 wt. %, especially 2 wt. % of emitter S B When measured on PMMA, it exhibits a photoluminescence quantum yield (PLQY) of over 70%.

[0454] In a more preferred embodiment of the present invention, a small FWHM emitter S B At room temperature, (1 to 5 wt. %, especially 2 wt. % of emitter S B When measured on PMMA, it exhibits a photoluminescence quantum yield (PLQY) of over 80%.

[0455] In a particularly preferred embodiment of the present invention, a small FWHM emitter S B At room temperature, (1 to 5 wt. %, especially 2 wt. % of emitter S B When measured on PMMA, it exhibits a photoluminescence quantum yield (PLQY) of over 90%.

[0456] In one embodiment of the present invention, a small FWHM emitter S B is 0.001–0.2 mg / mL of emitter S in dichloromethane or toluene at room temperature (i.e., (approximately) 20 °C). B When measured at 1000 nm, the compound exhibits a photoluminescence quantum yield (PLQY) of 50% or more.

[0457] In a preferred embodiment of the present invention, a small FWHM emitter S B is 0.001–0.2 mg / mL of emitter S in dichloromethane or toluene at room temperature (i.e., (approximately) 20 °C). BWhen measured at 1000 K, it exhibits a photoluminescence quantum yield (PLQY) of 60% or more.

[0458] In a more preferred embodiment of the present invention, a small FWHM emitter S B is 0.001–0.2 mg / mL of emitter S in dichloromethane or toluene at room temperature (i.e., (approximately) 20 °C). B When measured at 1000 K, it exhibits a photoluminescence quantum yield (PLQY) of 70% or more.

[0459] In a more preferred embodiment of the present invention, a small FWHM emitter S B is 0.001–0.2 mg / mL of emitter S in dichloromethane or toluene at room temperature (i.e., (approximately) 20 °C). B When measured at 1000 nm, the photoluminescence quantum yield (PLQY) is 80% or more.

[0460] In a particularly preferred embodiment of the present invention, a small FWHM emitter S B is 0.001–0.2 mg / mL of emitter S in dichloromethane or toluene at room temperature (i.e., (approximately) 20 °C). B When measured at 1000 K, it exhibits a photoluminescence quantum yield (PLQY) of 90% or more.

[0461] Those skilled in the art will recognize that a small FWHM emitter S that meets the aforementioned requirements or preferred characteristics may be B Know how to design.

[0462] In the context of the present invention, a small FWHM emitter S B A class of molecules suitable for providing the above is the well-known 4,4-difluoro-4-bora-3a,4a-diaza-s-indacene (BODIPY) based materials, whose structural features and applications in organic electroluminescent devices have been extensively discussed and are common knowledge to those skilled in the art. The prior art also shows how such materials can be synthesized and how to arrive at emitters with specific emission hues.

[0463] See, for example: J. Liao, Y. Wang, Y. 2020, 32(1), 56-70, DOI: 10.1080 / 10610278.2019.1691727; M.Poddar, R.Misra, Coordination Chemistry Reviews 2020, 421, 213462-213483; DOI: 10.1016 / j.ccr.2020.213462.

[0464] In addition, experienced engineers have confirmed that the basic structure of BODIPY shown below is

[0465] JPEG2025510014000131.jpg20170

[0466] For example, they are well aware of the fact that intermolecular π-π interactions and the associated self-quenching make them less than ideally suited as emitters in organic electroluminescent devices.

[0467] It is common knowledge for those skilled in the art that emitter molecules that are more suitable for organic electroluminescent devices can be reached by attaching bulky groups as substituents to the aforementioned BODIPY core structure. Such bulky groups can be, for example, aryl, heteroaryl, alkyl or alkoxy substituents (among many others) or fused polyaromatic or heteroaromatic, all of which are optionally substituted. The selection of suitable substituents on the BODIPY core is obvious to the skilled artisan and can be easily derived from the prior art. As well as the numerous synthetic routes that have been established for the synthesis and subsequent modification of such molecules.

[0468] See, for example: BM Squeo, M. Pasini, Supramolecular Chemistry 2020, 32(1), 56-70, DOI: 10.1080 / 10610278.2019.1691727; M. Poddar, R. Misra, Coordination Chemistry Reviews 2020, 421, 213462-213483; DOI: 10.1016 / j.ccr.2020.213462.

[0469] In the context of the present invention, a small FWHM emitter S B Examples of suitable BODIPY emitters are shown below:

[0470] JPEG2025510014000132.jpg72170JPEG2025510014000133.jpg183170JPEG2025510014000134.jpg39170JPEG2025510014000135.jpg114170

[0471] This is because BODIPY derivatives with different structural features from those described above can be used in the context of the present invention to produce small FWHM emitters S B It is understood that this does not mean that the invention is not suitable for use as a

[0472] For example, the BODIPY-derived structures or derivatives thereof disclosed in US2020251663(A1), EP3671884(A1), US20160230960(A1), US20150303378(A1) are suitable for use in the present invention as small FWHM emitter S B It is.

[0473] In addition, one or both of the fluorine substituents attached to the central boron atom of the BODIPY core structure may be attached via an oxygen atom, preferably fluorine (F) or trifluoromethyl (CF 3It is known to those skilled in the art that by substituting alkoxy or aryloxy groups selectively substituted with electron-withdrawing substituents such as aryloxy groups, it is possible to arrive at emitters for organic electroluminescent devices. Such molecules are disclosed, for example, in US2012037890(A1), and the skilled artisan will appreciate that such BODIPY-related compounds are suitable small FWHM emitters S in the context of the present invention. B Examples of such emitter molecules are shown below, because only the structures shown below are suitable small FWHM emitters S B This does not mean that:

[0474] JPEG2025510014000136.jpg174170

[0475] Additionally, the BODIPY-related boron-containing emitters disclosed in US20190288221(A1) are suitable for use with the present invention as small FWHM emitters S B The present invention provides a group of emitters capable of providing:

[0476] In the context of the present invention, a small FWHM emitter S B Another class of molecules suitable for providing a charge-transfer (Pt) emitter are near-range-charge-transfer (NRCT) emitters.

[0477] Typical NRCT emitters have been described in the literature that exhibit delayed components in the time-resolved photoluminescence spectra, indicating short-range HOMO-LUMO separation, see for example: T.Hatakeyama, K.Shiren, K.Nakajima, S.Nomura, S.Nakatsuka, K.Kinoshita, J.Ni, Y.Ono, and T.Ikuta, Advanced Materials 2016, 28(14), 2777, DOI: 10.1002 / adma.201505491.

[0478] A typical NRCT emitter exhibits only one emission band in the emission spectrum, whereas a typical fluorescent emitter exhibits multiple unique emission bands due to vibrational progression.

[0479] The skilled artisan will recognize that in the context of the present invention, a small FWHM emitter S B For example, the emitter disclosed in EP 3109253 (A1) is considered to be a small FWHM emitter S in the context of the present invention. B It is also used as a.

[0480] Also, for example, US2014058099(A1), US2009295275(A1), US2012319052(A1), EP2182040(A2), US2018069182(A1), US2019393419(A1), US2020006671(A1), 91(A1), US2020176684(A1), US202 No. 0161552 (A1), US2020227639 (A1), US2020185635 (A1), EP3686206 (A1), EP3686206 (A1), WO2020217229 (A1), WO2020208051 (A1), and US2020328351 (A1) disclose small FWHM emitter S for use according to the present invention. B The present invention discloses emitter materials suitable as:

[0481] In the context of the present invention, a small FWHM emitter S B One group of emitters that can be used are boron (B)-containing emitters that include or consist of a structure according to the following formula DABNA-I:

[0482] [Chemical formula: DABNA-I] JPEG2025510014000137.jpg37170

[0483] Where: each of ring A', ring B' and ring C' is independently an aromatic ring or a heteroaromatic ring containing 5 to 24 ring atoms, in which, in the case of a heteroaromatic ring, 1 to 3 ring atoms are independently a heteroatom selected from N, O, S and Se; wherein in each aromatic or heteroaromatic ring A′, B′ and C′, optionally one or more hydrogen atoms are independently selected from the group consisting of a substituent R DABNA-1 which in each occurrence is selected independently from the group consisting of: Deuterium, N(R DABNA-2 ) 2 , OR DABNA-2 , S.R. DABNA-2 , Si(R DABNA-2 ) 3 , B(OR DABNA-2 ) 2 , O.S.O. 2 R DABNA-2 , C.F. 3 , CN, halogens (F, Cl, Br, I), C 1 -C 40 Alkyl, This can be optionally substituted with one or more substituents R DABNA-2 is replaced by Here, one or more non-adjacent CH 2 The group is optionally R DABNA-2 C=CR DABNA-2 , C≡C, Si(R DABNA-2 ) 2 , Ge(R DABNA-2 ) 2 , Sn(R DABNA-2 ) 2 , C=O, C=S, C=Se, C=NR DABNA-2 , P(=O)(R DABNA-2 ), SO, SO 2 , N.R. DABNA-2 , O, S or CONR DABNA-2 is replaced by C 1 -C 40 Alkoxy, This can be optionally substituted with one or more substituents R DABNA-2 is replaced by Here, one or more non-adjacent CH 2 The group is optionally RDABNA-2 C=CR DABNA-2 , C≡C, Si(R DABNA-2 ) 2 , Ge(R DABNA-2 ) 2 , Sn(R DABNA-2 ) 2 , C=O, C=S, C=Se, C=NR DABNA-2 , P(=O)(R DABNA-2 ), SO, SO 2 , N.R. DABNA-2 , O, S or CONR DABNA-2 is replaced by C 1 -C 40 Thioalkoxy, This can be optionally substituted with one or more substituents R DABNA-2 is replaced by Here, one or more non-adjacent CH 2 The group is optionally R DABNA-2 C=CR DABNA-2 , C≡C, Si(R DABNA-2 ) 2 , Ge(R DABNA-2 ) 2 , Sn(R DABNA-2 ) 2 , C=O, C=S, C=Se, C=NR DABNA-2 , P(=O)(R DABNA-2 ), SO, SO 2 , N.R. DABNA-2 , O, S or CONR DABNA-2 is replaced by C 2 -C 40 Alkenyl, This can be optionally substituted with one or more substituents R DABNA-2 is replaced by Here, one or more non-adjacent CH 2 The group is optionally R DABNA-2 C=CR DABNA-2 , C≡C, Si(R DABNA-2 ) 2 , Ge(R DABNA-2 ) 2 , Sn(R DABNA-2 ) 2 , C=O, C=S, C=Se, C=NR DABNA-2 , P(=O)(R DABNA-2 ), SO, SO 2 , N.R.DABNA-2 , O, S or CONR DABNA-2 is replaced by C 2 -C 40 Alkynyl, This can be optionally substituted with one or more substituents R DABNA-2 is replaced by Here, one or more non-adjacent CH 2 The group is optionally R DABNA-2 C=CR DABNA-2 , C≡C, Si(R DABNA-2 ) 2 , Ge(R DABNA-2 ) 2 , Sn(R DABNA-2 ) 2 , C=O, C=S, C=Se, C=NR DABNA-2 , P(=O)(R DABNA-2 ), SO, SO 2 , N.R. DABNA-2 , O, S or CONR DABNA-2 is replaced by Optionally, one or more substituents R DABNA-2 C replaced with 6 -C 60 Aryl, Optionally, one or more substituents R DABNA-2 C replaced with 3 -C 57 Heteroaryl, and an aliphatic cyclic amine containing 4 to 18 carbon atoms and 1 to 3 nitrogen atoms; R DABNA-2 are, in each occurrence, independently selected from the group consisting of: Hydrogen, deuterium, N(R DABNA-6 ) 2 , OR DABNA-6 , S.R. DABNA-6 , Si(R DABNA-6 ) 3 , B(OR DABNA-6 ) 2 , O.S.O. 2 R DABNA-6 , C.F. 3 , CN, halogens (F, Cl, Br, I), C 1 -C 5 Alkyl, This can be optionally substituted with one or more substituents R DABNA-6is replaced by Here, one or more non-adjacent CH 2 The group is optionally R DABNA-6 C=CR DABNA-6 , C≡C, Si(R DABNA-6 ) 2 , Ge(R DABNA-6 ) 2 , Sn(R DABNA-6 ) 2 , C=O, C=S, C=Se, C=NR DABNA-6 , P(=O)(R DABNA-6 ), SO, SO 2 , N.R. DABNA-6 , O, S or CONR DABNA-6 is replaced by C 1 -C 5 Alkoxy, This can be optionally substituted with one or more substituents R DABNA-6 is replaced by Here, one or more non-adjacent CH 2 The group is optionally R DABNA-6 C=CR DABNA-6 , C≡C, Si(R DABNA-6 ) 2 , Ge(R DABNA-6 ) 2 , Sn(R DABNA-6 ) 2 , C=O, C=S, C=Se, C=NR DABNA-6 , P(=O)(R DABNA-6 ), SO, SO 2 , N.R. DABNA-6 , O, S or CONR DABNA-6 is replaced by C 1 -C 5 Thioalkoxy, This can be optionally substituted with one or more substituents R DABNA-6 is replaced by Here, one or more non-adjacent CH 2 The group is optionally R DABNA-6 C=CR DABNA-6 , C≡C, Si(R DABNA-6 ) 2 , Ge(R DABNA-6 ) 2 , Sn(R DABNA-6 ) 2 , C=O, C=S, C=Se, C=NRDABNA-6 , P(=O)(R DABNA-6 ), SO, SO 2 , N.R. DABNA-6 , O, S or CONR DABNA-6 is replaced by C 2 -C 5 Alkenyl, This can be optionally substituted with one or more substituents R DABNA-6 is replaced by Here, one or more non-adjacent CH 2 The group is optionally R DABNA-6 C=CR DABNA-6 , C≡C, Si(R DABNA-6 ) 2 , Ge(R DABNA-6 ) 2 , Sn(R DABNA-6 ) 2 , C=O, C=S, C=Se, C=NR DABNA-6 , P(=O)(R DABNA-6 ), SO, SO 2 , N.R. DABNA-6 , O, S or CONR DABNA-6 is replaced by C 2 -C 5 Alkynyl, This can be optionally substituted with one or more substituents R DABNA-6 is replaced by Here, one or more non-adjacent CH 2 The group is optionally R DABNA-6 C=CR DABNA-6 , C≡C, Si(R DABNA-6 ) 2 , Ge(R DABNA-6 ) 2 , Sn(R DABNA-6 ) 2 , C=O, C=S, C=Se, C=NR DABNA-6 , P(=O)(R DABNA-6 ), SO, SO 2 , N.R. DABNA-6 , O, S or CONR DABNA-6 is replaced by Optionally, one or more substituents R DABNA-6 C replaced with 6 -C 18 Aryl, Optionally, one or more substituents R DABNA-6C replaced with 3 -C 17 Heteroaryl, and an aliphatic cyclic amine containing 4 to 18 carbon atoms and 1 to 3 nitrogen atoms; Here, R DABNA-1 and R DABNA-2 two or more adjacent substituents selected from optionally form a monocyclic or polycyclic, aliphatic or aromatic or heteroaromatic, carbocyclic or heterocyclic ring system fused to adjacent rings A', B' or C', wherein the fused ring system thus formed (i.e., each ring A', B' or C' and any additional rings optionally fused thereto) contains a total of 8 to 30 ring atoms; Y a and Y b are, independently of each other, a direct (single) bond, NR DABNA-3 , O, S, C(R DABNA-3 ) 2 , Si(R DABNA-3 ) 2 , B.R. DABNA-3 and Se; R DABNA-3 are, in each occurrence, independently selected from the group consisting of: Hydrogen, deuterium, N(R DABNA-4 ) 2 , OR DABNA-4 , S.R. DABNA-4 , Si(R DABNA-4 ) 3 , B(OR DABNA-4 ) 2 , O.S.O. 2 R DABNA-4 , C.F. 3 , CN, halogens (F, Cl, Br, I), C 1 -C 40 Alkyl, This can be optionally substituted with one or more substituents R DABNA-4 is replaced by Here, one or more non-adjacent CH 2 The group is optionally R DABNA-4 C=CR DABNA-4 , C≡C, Si(R DABNA-4 ) 2 , Ge(R DABNA-4 ) 2 , Sn(RDABNA-4 ) 2 , C=O, C=S, C=Se, C=NR DABNA-4 , P(=O)(R DABNA-4 ), SO, SO 2 , N.R. DABNA-4 , O, S or CONR DABNA-4 is replaced by C 1 -C 40 Alkoxy, This can be optionally substituted with one or more substituents R DABNA-4 is replaced by Here, one or more non-adjacent CH 2 The group is optionally R DABNA-4 C=CR DABNA-4 , C≡C, Si(R DABNA-4 ) 2 , Ge(R DABNA-4 ) 2 , Sn(R DABNA-4 ) 2 , C=O, C=S, C=Se, C=NR DABNA-4 , P(=O)(R DABNA-4 ), SO, SO 2 , N.R. DABNA-4 , O, S or CONR DABNA-4 is replaced by C 1 -C 40 Thioalkoxy, This can be optionally substituted with one or more substituents R DABNA-4 is replaced by Here, one or more non-adjacent CH 2 The group is optionally R DABNA-4 C=CR DABNA-4 , C≡C, Si(R DABNA-4 ) 2 , Ge(R DABNA-4 ) 2 , Sn(R DABNA-4 ) 2 , C=O, C=S, C=Se, C=NR DABNA-4 , P(=O)(R DABNA-4 ), SO, SO 2 , N.R. DABNA-4 , O, S or CONR DABNA-4 is replaced by C 2 -C 40 Alkenyl, This can be optionally substituted with one or more substituents R DABNA-4 is replaced by Here, one or more non-adjacent CH 2 The group is optionally R DABNA-4 C=CR DABNA-4 , C≡C, Si(R DABNA-4 ) 2 , Ge(R DABNA-4 ) 2 , Sn(R DABNA-4 ) 2 , C=O, C=S, C=Se, C=NR DABNA-4 , P(=O)(R DABNA-4 ), SO, SO 2 , N.R. DABNA-4 , O, S or CONR DABNA-4 is replaced by C 2 -C 40 Alkynyl, This can be optionally substituted with one or more substituents R DABNA-4 is replaced by Here, one or more non-adjacent CH 2 The group is optionally R DABNA-4 C=CR DABNA-4 , C≡C, Si(R DABNA-4 ) 2 , Ge(R DABNA-4 ) 2 , Sn(R DABNA-4 ) 2 , C=O, C=S, C=Se, C=NR DABNA-4 , P(=O)(R DABNA-4 ), SO, SO 2 , N.R. DABNA-4 , O, S or CONR DABNA-4 is replaced by Optionally, one or more substituents R DABNA-4 C replaced with 6 -C 60 Aryl, Optionally, one or more substituents R DABNA-4 C replaced with 3 -C 57 Heteroaryl, and an aliphatic cyclic amine containing 4 to 18 carbon atoms and 1 to 3 nitrogen atoms; R DABNA-4 are, in each occurrence, independently selected from the group consisting of: Hydrogen, deuterium, N(R DABNA-5 ) 2 , OR DABNA-5 , S.R. DABNA-5 , Si(R DABNA-5 ) 3 , B(OR DABNA-5 ) 2 , O.S.O. 2 R DABNA-5 , C.F. 3 , CN, halogens (F, Cl, Br, I), C 1 -C 40 Alkyl, This can be optionally substituted with one or more substituents R DABNA-5 is replaced by Here, one or more non-adjacent CH 2 The group is optionally R DABNA-5 C=CR DABNA-5 , C≡C, Si(R DABNA-5 ) 2 , Ge(R DABNA-5 ) 2 , Sn(R DABNA-5 ) 2 , C=O, C=S, C=Se, C=NR DABNA-5 , P(=O)(R DABNA-5 ), SO, SO 2 , N.R. DABNA-5 , O, S or CONR DABNA-5 is replaced by C 1 -C 40 Alkoxy, This can be optionally substituted with one or more substituents R DABNA-5 is replaced by Here, one or more non-adjacent CH 2 The group is optionally R DABNA-5 C=CR DABNA-5 , C≡C, Si(R DABNA-5 ) 2 , Ge(R DABNA-5 ) 2 , Sn(R DABNA-5 ) 2 , C=O, C=S, C=Se, C=NR DABNA-5 , P(=O)(R DABNA-5 ), SO, SO 2 , N.R. DABNA-5 , O, S or CONR DABNA-5 is replaced by C 1 -C 40 Thioalkoxy, This can be optionally substituted with one or more substituents R DABNA-5 is replaced by Here, one or more non-adjacent CH 2 The group is optionally R DABNA-5 C=CR DABNA-5 , C≡C, Si(R DABNA-5 ) 2 , Ge(R DABNA-5 ) 2 , Sn(R DABNA-5 ) 2 , C=O, C=S, C=Se, C=NR DABNA-5 , P(=O)(R DABNA-5 ), SO, SO 2 , N.R. DABNA-5 , O, S or CONR DABNA-5 is replaced by C 2 -C 40 Alkenyl, This can be optionally substituted with one or more substituents R DABNA-5 is replaced by Here, one or more non-adjacent CH 2 The group is optionally R DABNA-5 C=CR DABNA-5 , C≡C, Si(R DABNA-5 ) 2 , Ge(R DABNA-5 ) 2 , Sn(R DABNA-5 ) 2 , C=O, C=S, C=Se, C=NR DABNA-5 , P(=O)(R DABNA-5 ), SO, SO 2 , N.R. DABNA-5 , O, S or CONR DABNA-5 is replaced by C 2 -C 40 Alkynyl, This can be optionally substituted with one or more substituents R DABNA-5 is replaced by Here, one or more non-adjacent CH 2 The group is optionally R DABNA-5 C=CR DABNA-5 , C≡C, Si(R DABNA-5 ) 2, Ge(R DABNA-5 ) 2 , Sn(R DABNA-5 ) 2 , C=O, C=S, C=Se, C=NR DABNA-5 , P(=O)(R DABNA-5 ), SO, SO 2 , N.R. DABNA-5 , O, S or CONR DABNA-5 is replaced by Optionally, one or more substituents R DABNA-5 C replaced with 6 -C 60 Aryl, Optionally, one or more substituents R DABNA-5 C replaced with 3 -C 57 Heteroaryl, and an aliphatic cyclic amine containing 4 to 18 carbon atoms and 1 to 3 nitrogen atoms; R DABNA-5 are, in each occurrence, independently selected from the group consisting of: Hydrogen, deuterium, N(R DABNA-6 ) 2 , OR DABNA-6 , S.R. DABNA-6 , Si(R DABNA-6 ) 3 , B(OR DABNA-6 ) 2 , O.S.O. 2 R DABNA-6 , C.F. 3 , CN, halogens (F, Cl, Br, I), C 1 -C 5 Alkyl, This can be optionally substituted with one or more substituents R DABNA-6 is replaced by Here, one or more non-adjacent CH 2 The group is optionally R DABNA-6 C=CR DABNA-6 , C≡C, Si(R DABNA-6 ) 2 , Ge(R DABNA-6 ) 2 , Sn(R DABNA-6 ) 2 , C=O, C=S, C=Se, C=NR DABNA-6 , P(=O)(R DABNA-6 ), SO, SO2 , N.R. DABNA-6 , O, S or CONR DABNA-6 is replaced by C 1 -C 5 Alkoxy, This can be optionally substituted with one or more substituents R DABNA-6 is replaced by Here, one or more non-adjacent CH 2 The group is optionally R DABNA-6 C=CR DABNA-6 , C≡C, Si(R DABNA-6 ) 2 , Ge(R DABNA-6 ) 2 , Sn(R DABNA-6 ) 2 , C=O, C=S, C=Se, C=NR DABNA-6 , P(=O)(R DABNA-6 ), SO, SO 2 , N.R. DABNA-6 , O, S or CONR DABNA-6 is replaced by C 1 -C 5 Thioalkoxy, This can be optionally substituted with one or more substituents R DABNA-6 is replaced by Here, one or more non-adjacent CH 2 The group is optionally R DABNA-6 C=CR DABNA-6 , C≡C, Si(R DABNA-6 ) 2 , Ge(R DABNA-6 ) 2 , Sn(R DABNA-6 ) 2 , C=O, C=S, C=Se, C=NR DABNA-6 , P(=O)(R DABNA-6 ), SO, SO 2 , N.R. DABNA-6 , O, S or CONR DABNA-6 is replaced by C 2 -C 5 Alkenyl, This can be optionally substituted with one or more substituents R DABNA-6 is replaced by Here, one or more non-adjacent CH 2 The group is optionally R DABNA-6C=CR DABNA-6 , C≡C, Si(R DABNA-6 ) 2 , Ge(R DABNA-6 ) 2 , Sn(R DABNA-6 ) 2 , C=O, C=S, C=Se, C=NR DABNA-6 , P(=O)(R DABNA-6 ), SO, SO 2 , N.R. DABNA-6 , O, S or CONR DABNA-6 is replaced by C 2 -C 5 Alkynyl, This can be optionally substituted with one or more substituents R DABNA-6 is replaced by Here, one or more non-adjacent CH 2 The group is optionally R DABNA-6 C=CR DABNA-6 , C≡C, Si(R DABNA-6 ) 2 , Ge(R DABNA-6 ) 2 , Sn(R DABNA-6 ) 2 , C=O, C=S, C=Se, C=NR DABNA-6 , P(=O)(R DABNA-6 ), SO, SO 2 , N.R. DABNA-6 , O, S or CONR DABNA-6 is replaced by Optionally, one or more substituents R DABNA-6 C replaced with 6 -C 18 Aryl, Optionally, one or more substituents R DABNA-6 C replaced with 3 -C 17 Heteroaryl, and an aliphatic cyclic amine containing 4 to 18 carbon atoms and 1 to 3 nitrogen atoms; Here, R DABNA-3 , R DABNA-4 and R DABNA-5two or more adjacent substituents selected from optionally form together a monocyclic or polycyclic, aliphatic or aromatic or heteroaromatic, carbocyclic or heterocyclic ring system, wherein optionally the fused ring system thus formed contains a total of 8 to 30 ring atoms; R DABNA-6 are, in each occurrence, independently selected from the group consisting of: Hydrogen, deuterium, OPh (Ph = phenyl), SPh, CF 3 , CN, F, Si(C 1 -C 5 Alkyl) 3 , Si(Ph) 3 , C 1 -C 5 Alkyl, wherein optionally one or more hydrogen atoms are independently selected from deuterium, Ph, CN, CF 3 or replaced by F, C 1 -C 5 Alkoxy, wherein optionally one or more hydrogen atoms are independently selected from deuterium, CN, CF 3 or replaced by F, C 1 -C 5 Thioalkoxy, wherein optionally one or more hydrogen atoms are independently selected from deuterium, CN, CF 3 or replaced by F, C 2 -C 5 Alkenyl, wherein optionally one or more hydrogen atoms are independently selected from deuterium, CN, CF 3 or replaced by F, C 2 -C 5 Alkynyl, wherein optionally one or more hydrogen atoms are independently selected from deuterium, CN, CF 3 or replaced by F, C 6 -C 18 Aryl, wherein optionally one or more hydrogen atoms are independently selected from deuterium, CN, CF 3 , F, C1 -C 5 Alkyl, SiMe 3 , SiPh 3 , or C 6 -C 18 substituted with an aryl substituent; C 3 -C 17 Heteroaryl, wherein optionally one or more hydrogen atoms are independently selected from deuterium, CN, CF 3 , F, C 1 -C 5 Alkyl, SiMe 3 , SiPh 3 , or C 6 -C 18 substituted with an aryl substituent; N(C 6 -C 18 Aryl) 2 , N(C 3 -C 17 Heteroaryl) 2 , and N(C 3 -C 17 Heteroaryl)(C 6 -C 18 aryl), Here, Y a and Y b or Y a and Y b Both are NR DABNA-3 , C(R DABNA-3 ) 2 , Si(R DABNA-3 ) 2 , or B.R. DABNA-3 when said one or two substituents R DABNA-3 optionally, independently of each other, adjacent rings A' and B' (Y a =NR DABNA-3 , C(R DABNA-3 ) 2 , Si(R DABNA-3 ) 2 , or B.R. DABNA-3 ), or A' and C'(Y b =NR DABNA-3 , C(R DABNA-3 ) 2 , Si(RDABNA-3 ) 2 , or B.R. DABNA-3 ), or, independently in each case, NR DABNA-1 , O, S, C(R DABNA-1 ) 2 , Si(R DABNA-1 ) 2 , B.R. DABNA-1 and Se, wherein optionally two or more, preferably two, structures of the formula DABNA-I are joined to each other, preferably fused to each other by sharing at least one, more preferably exactly one bond; wherein optionally two or more, preferably two, structures of formula DABNA-I are present in the emitter and share at least one, preferably exactly one, aromatic or heteroaromatic ring (i.e., the ring is part of two structures of formula DABNA-I), the ring being preferably any one of rings A', B' and C' of formula DABNA-I, but also R DABNA-1 , R DABNA-2 , R DABNA-3 , R DABNA-4 , R DABNA-5 and R DABNA-6 , especially R DABNA-3 or any aromatic or heteroaromatic ring formed by two or more adjacent substituents as above, where the shared ring may constitute the same or different moieties of two or more structures of formula DABNA-I that share said ring (i.e., the shared ring is, for example, ring C' of two structures of formula DABNA-I selectively contained in the emitter, or the shared ring is, for example, ring B' of one structure of formula DABNA-I and ring C' of the other structure selectively contained in the emitter), Here, selectively R DABNA-1 , R DABNA-2 , R DABNA-3 , R DABNA-4 , R DABNA-5 and R DABNA-6at least one of the groups R1, R2, R3, R4, R5, R6, R7, R8, R9, R10, R11, R12, R13, R14, R15, R16, R17, R18, R19, R20, R21, R22, R33, R44, R55, R66, R78, R8, R99, R11, R12, R13, R21 DABNA-1 , R DABNA-2 , R DABNA-3 , R DABNA-4 , R DABNA-5 and R DABNA-6 At least one hydrogen atom of any one of is replaced by a bond to a further chemical entity of formula DABNA-I.

[0484] In one embodiment of the present invention, at least one, preferably each, light-emitting layer B may include one or more small FWHM emitters S B At least one of the above comprises a structure according to the formula DABNA-I.

[0485] In one embodiment of the present invention, at least one, preferably each, light-emitting layer B has a respective small FWHM emitter S B includes a structure according to the formula DABNA-I.

[0486] In one embodiment of the present invention, at least one, preferably each, light-emitting layer B may include one or more small FWHM emitters S B At least one of the antibodies has a structure according to the formula DABNA-I.

[0487] In one embodiment of the present invention, at least one, preferably each, light-emitting layer B has a respective small FWHM emitter S B has the structure according to the chemical formula DABNA-I.

[0488] In a preferred embodiment of the present invention, at least one, preferably each, light-emitting layer B includes at least one, preferably each, small FWHM emitter S B comprises or consists of a structure according to the formula DABNA-I, where A', B' and C' are all aromatic rings each having six ring atoms (ie, all benzene rings).

[0489] In one embodiment of the present invention, at least one, preferably each, light-emitting layer B includes at least one, preferably each, small FWHM emitter S B comprises or consists of a structure according to the formula DABNA-I, and Y a and Y b are, independently of each other, NR DABNA-3 , O, S, C(R DABNA-3 ) 2 , and Si(R DABNA-3 ) 2 is selected from.

[0490] In a preferred embodiment of the present invention, at least one, preferably each, light-emitting layer B includes at least one, preferably each, small FWHM emitter S B comprises or consists of a structure according to the formula DABNA-I, and Y a and Y b are, independently of each other, NR DABNA-3 , O and S.

[0491] In a more preferred embodiment of the present invention, at least one, preferably each, light-emitting layer B includes at least one, preferably each, small FWHM emitter S B comprises or consists of a structure according to the formula DABNA-I, and Y a and Y b are, independently of each other, NR DABNA-3 and O.

[0492] In a particularly preferred embodiment of the present invention, at least one, preferably each, light-emitting layer B includes at least one, preferably each, small FWHM emitter S B comprises or consists of a structure according to the formula DABNA-I, and Y a and Y b are both NR DABNA-3 It is.

[0493] In a particularly preferred embodiment of the present invention, at least one, preferably each, light-emitting layer B includes at least one, preferably each, small FWHM emitter S B comprises or consists of a structure according to the formula DABNA-I, and Y a and Y b are identical and both are NR DABNA-3 It is.

[0494] In one embodiment of the present invention, at least one, preferably each, light-emitting layer B includes at least one, preferably each, small FWHM emitter S B comprises or consists of a structure according to the formula DABNA-I, R DABNA-1 are, in each occurrence, independently selected from the group consisting of: Hydrogen, deuterium, N(R DABNA-2 ) 2 , OR DABNA-2 , S.R. DABNA-2 , Si(R DABNA-2 ) 3 , C.F. 3 ,C.N.,F. Optionally, one or more substituents R DABNA-2 C replaced with 1 -C 5 Alkyl, Optionally, one or more substituents R DABNA-2 C replaced with 1 -C 5 Alkoxy, Optionally, one or more substituents R DABNA-2 C replaced with 1 -C 5 Thioalkoxy, Optionally, one or more substituents R DABNA-2 C replaced with 6 -C 18 Aryl, Optionally, one or more substituents R DABNA-2 C replaced with 3 -C 17 Heteroaryl, R DABNA-2are, in each occurrence, independently selected from the group consisting of: Hydrogen, deuterium, N(R DABNA-6 ) 2 , OR DABNA-6 , S.R. DABNA-6 , Si(R DABNA-6 ) 3 , C.F. 3 ,C.N.,F. Optionally, one or more substituents R DABNA-6 C replaced with 1 -C 5 Alkyl, Optionally, one or more substituents R DABNA-6 C replaced with 6 -C 18 Aryl, Optionally, one or more substituents R DABNA-6 C replaced with 3 -C 17 Heteroaryl, Here, R DABNA-1 and R DABNA-2 Two or more adjacent substituents selected from optionally form a monocyclic or polycyclic, aliphatic or aromatic or heteroaromatic, carbocyclic or heterocyclic ring system fused to adjacent rings A', B' or C', wherein the fused ring system thus formed (i.e., each ring A', B' or C' and any additional rings optionally fused thereto) contains a total of 8 to 30 ring atoms.

[0495] In one embodiment of the present invention, at least one, preferably each, light-emitting layer B includes at least one, preferably each, small FWHM emitter S B comprises or consists of a structure according to the formula DABNA-I, R DABNA-1 are, in each occurrence, independently selected from the group consisting of: Hydrogen, deuterium, N(R DABNA-2 ) 2 , OR DABNA-2 , S.R. DABNA-2 , Si(R DABNA-2 ) 3 , Optionally, one or more substituents R DABNA-2C replaced with 1 -C 5 Alkyl, Optionally, one or more substituents R DABNA-2 C replaced with 6 -C 18 Aryl, Optionally, one or more substituents R DABNA-2 C replaced with 3 -C 17 Heteroaryl, R DABNA-2 are, in each occurrence, independently selected from the group consisting of: Hydrogen, deuterium, N(R DABNA-6 ) 2 , OR DABNA-6 , S.R. DABNA-6 , Si(R DABNA-6 ) 3 , C.F. 3 ,C.N.,F. Optionally, one or more substituents R DABNA-6 C replaced with 1 -C 5 Alkyl, Optionally, one or more substituents R DABNA-6 C replaced with 6 -C 18 Aryl, Optionally, one or more substituents R DABNA-6 C replaced with 3 -C 17 Heteroaryl, Here, R DABNA-1 and R DABNA-2 Two or more adjacent substituents selected from optionally form a monocyclic or polycyclic, aliphatic or aromatic or heteroaromatic, carbocyclic or heterocyclic ring system fused to adjacent rings A', B' or C', wherein the fused ring system thus formed (i.e., each ring A', B' or C' and any additional rings optionally fused thereto) contains a total of 8 to 30 ring atoms.

[0496] In one embodiment of the present invention, at least one, preferably each, light-emitting layer B includes at least one, preferably each, small FWHM emitter S Bcomprises or consists of a structure according to the formula DABNA-I, R DABNA-1 are, in each occurrence, independently selected from the group consisting of: Hydrogen, deuterium, N(R DABNA-2 ) 2 , OR DABNA-2 , S.R. DABNA-2 , Optionally, one or more substituents R DABNA-2 C replaced with 1 -C 5 Alkyl, Optionally, one or more substituents R DABNA-2 C replaced with 6 -C 18 Aryl, Optionally, one or more substituents R DABNA-2 C replaced with 3 -C 17 Heteroaryl, R DABNA-2 are, in each occurrence, independently selected from the group consisting of: Hydrogen, Deuterium, N(Ph) 2 ,OPh,CN,Me, i Pr, t Bu, Si(Me) 3 , Optionally, one or more substituents R DABNA-6 Ph substituted with Optionally, one or more substituents R DABNA-6 C replaced with 3 -C 17 Heteroaryl, Here, two or more adjacent R DABNA-1 forms a monocyclic or polycyclic, aliphatic or aromatic or heteroaromatic, carbocyclic or heterocyclic ring system fused to an adjacent ring A', B' or C', wherein optionally the fused ring system thus formed (i.e., each ring A', B' or C' and any additional rings optionally fused thereto) contains a total of 8 to 30 ring atoms.

[0497] In one embodiment of the present invention, at least one, preferably each, light-emitting layer B includes at least one, preferably each, small FWHM emitter S B comprises or consists of a structure according to the formula DABNA-I, R DABNA-1 are, in each occurrence, independently selected from the group consisting of: Hydrogen, Deuterium, N(Ph) 2 , OPh, Me, i Pr, t Bu, Si(Me) 3 , Ph, wherein optionally one or more hydrogen atoms are independently selected from deuterium, Me, i Pr, t substituted with Bu, Ph or CN; C 3 -C 17 Heteroaryl, wherein optionally one or more hydrogen atoms are independently selected from deuterium, Me, i Pr, t substituted with Bu, Ph or CN; where two or more adjacent substituents R DABNA-1 optionally forms a monocyclic or polycyclic, aliphatic or aromatic or heteroaromatic, carbocyclic or heterocyclic ring system fused to an adjacent ring A', B' or C', wherein the optionally fused ring system thus formed (i.e., each ring A', B' or C' and any additional rings optionally fused thereto) contains a total of 8 to 30 ring atoms.

[0498] In one embodiment of the present invention, at least one, preferably each, light-emitting layer B includes at least one, preferably each, small FWHM emitter S B comprises or consists of a structure according to the formula DABNA-I, R DABNA-1 are, in each occurrence, independently selected from the group consisting of: Hydrogen, Deuterium, N(Ph) 2 , Me,i Pr, t Bu, Ph, wherein optionally one or more hydrogen atoms are independently selected from deuterium, Me, i Pr, t substituted with Bu, Ph or CN; Carbazolyl, wherein optionally one or more hydrogen atoms are independently selected from deuterium, Me, i Pr, t substituted with Bu, Ph or CN; Triazinyl, wherein optionally one or more hydrogen atoms are independently selected from deuterium, Me, i Pr, t substituted with Bu or Ph, Pyrimidinyl, wherein optionally one or more hydrogen atoms are independently selected from deuterium, Me, i Pr, t substituted with Bu or Ph, Pyridinyl, wherein optionally one or more hydrogen atoms are independently selected from deuterium, Me, i Pr, t substituted with Bu or Ph, where two or more adjacent substituents R DABNA-1 optionally forms a monocyclic or polycyclic, aliphatic or aromatic or heteroaromatic, carbocyclic or heterocyclic ring system fused to an adjacent ring A', B' or C', wherein the optionally fused ring system thus formed (i.e., each ring A', B' or C' and any additional rings optionally fused thereto) contains a total of 8 to 30 ring atoms.

[0499] In one embodiment of the present invention, at least one, preferably each, light-emitting layer B includes at least one, preferably each, small FWHM emitter S B comprises or consists of a structure according to the formula DABNA-I, R DABNA-1 and R DABNA-2Adjacent substituents selected from do not form a monocyclic or polycyclic, aliphatic or aromatic or heteroaromatic, carbocyclic or heterocyclic ring system fused to the adjacent ring A', B' or C'.

[0500] In one embodiment of the present invention, at least one, preferably each, light-emitting layer B includes at least one, preferably each, small FWHM emitter S B comprises or consists of a structure according to the formula DABNA-I, R DABNA-3 are, in each occurrence, independently selected from the group consisting of: Hydrogen, deuterium, Optionally, one or more substituents R DABNA-4 C replaced with 1 -C 4 Alkyl, Optionally, one or more substituents R DABNA-4 C replaced with 6 -C 18 Aryl, Optionally, one or more substituents R DABNA-4 C replaced with 3 -C 17 Heteroaryl, R DABNA-4 are, in each occurrence, independently selected from the group consisting of: Hydrogen, deuterium, N(R DABNA-5 ) 2 , OR DABNA-5 , S.R. DABNA-5 , Si(C 1 -C 5 Alkyl) 3 , C.F. 3 ,C.N.,F. Optionally, one or more substituents R DABNA-5 C replaced with 1 -C 5 Alkyl, Optionally, one or more substituents R DABNA-5 C replaced with 6 -C 18 Aryl, Optionally, one or more substituents R DABNA-5 C replaced with 3 -C17 Heteroaryl, R DABNA-5 are, in each occurrence, independently selected from the group consisting of: Hydrogen, Deuterium, N(Ph) 2 , OPh, Si(Me) 3 , C.F. 3 ,C.N.,F. C 1 -C 5 Alkyl, wherein optionally one or more hydrogen atoms are independently replaced with deuterium; C 6 -C 18 Aryl, wherein optionally one or more hydrogen atoms are independently selected from deuterium, Me, i Pr, t substituted with Bu, Ph or CN; C 3 -C 17 Heteroaryl, wherein optionally one or more hydrogen atoms are independently selected from deuterium, Me, i Pr, t substituted with Bu, Ph or CN; Here, R DABNA-3 , R DABNA-4 and R DABNA-5 Two or more adjacent substituents selected from optionally form together a monocyclic or polycyclic, aliphatic or aromatic or heteroaromatic, carbocyclic or heterocyclic ring system, wherein optionally the ring system thus formed contains a total of 8 to 30 ring atoms.

[0501] In one embodiment of the present invention, at least one, preferably each, light-emitting layer B includes at least one, preferably each, small FWHM emitter S B comprises or consists of a structure according to the formula DABNA-I, R DABNA-3 are, in each occurrence, independently selected from the group consisting of: Hydrogen, deuterium, Optionally, one or more substituents R DABNA-4 C replaced with1 -C 4 Alkyl, Optionally, one or more substituents R DABNA-4 C replaced with 6 -C 18 Aryl, Optionally, one or more substituents R DABNA-4 C replaced with 3 -C 17 Heteroaryl, R DABNA-4 are, in each occurrence, independently selected from the group consisting of: Hydrogen, Deuterium, N(Ph) 2 , OPh, Si(Me) 3 , C.F. 3 ,C.N.,F. C 1 -C 5 Alkyl, wherein optionally one or more hydrogen atoms are independently replaced with deuterium; C 6 -C 18 Aryl, wherein optionally one or more hydrogen atoms are independently selected from deuterium, Me, i Pr, t substituted with Bu, Ph or CN; C 3 -C 17 Heteroaryl, wherein optionally one or more hydrogen atoms are independently selected from deuterium, Me, i Pr, t substituted with Bu, Ph or CN; Here, R DABNA-3 and R DABNA-4 Two or more adjacent substituents selected from do not form a monocyclic or polycyclic, aliphatic or aromatic or heteroaromatic, carbocyclic or heterocyclic ring system together.

[0502] In one embodiment of the present invention, at least one, preferably each, light-emitting layer B includes at least one, preferably each, small FWHM emitter S B comprises or consists of a structure according to the formula DABNA-I, R DABNA-3 are, in each occurrence, independently selected from the group consisting of: Hydrogen, deuterium, Optionally, one or more substituents R DABNA-4 C replaced with 1 -C 4 Alkyl, Optionally, one or more substituents R DABNA-4 C replaced with 6 -C 18 Aryl, Optionally, one or more substituents R DABNA-4 C replaced with 3 -C 17 Heteroaryl, R DABNA-4 are, in each occurrence, independently selected from the group consisting of: Hydrogen, deuterium, CN, F, C 1 -C 5 Alkyl, wherein optionally one or more hydrogen atoms are independently replaced with deuterium; C 6 -C 18 Aryl, wherein optionally one or more hydrogen atoms are independently selected from deuterium, Me, i Pr, t substituted with Bu, Ph or CN; C 3 -C 17 Heteroaryl, wherein optionally one or more hydrogen atoms are independently selected from deuterium, Me, i Pr, t substituted with Bu, Ph or CN; Here, R DABNA-3 and R DABNA-4 Two or more adjacent substituents selected from do not form a monocyclic or polycyclic, aliphatic or aromatic or heteroaromatic, carbocyclic or heterocyclic ring system together.

[0503] In one embodiment of the present invention, at least one, preferably each, light-emitting layer B includes at least one, preferably each, small FWHM emitter SB comprises or consists of a structure according to the formula DABNA-I, R DABNA-3 are, in each occurrence, independently selected from the group consisting of: Hydrogen, deuterium, Me, i Pr, t Bu, C 6 -C 18 Aryl, wherein optionally one or more hydrogen atoms are independently selected from deuterium, Me, i Pr, t substituted with Bu, Ph or CN; Here, R DABNA-3 Two or more adjacent substituents selected from do not form a monocyclic or polycyclic, aliphatic or aromatic or heteroaromatic, carbocyclic or heterocyclic ring system together.

[0504] In one embodiment of the present invention, at least one, preferably each, light-emitting layer B includes at least one, preferably each, small FWHM emitter S B comprises or consists of a structure according to the formula DABNA-I, R DABNA-3 are, in each occurrence, independently selected from the group consisting of: Hydrogen, deuterium, Me, i Pr, t Bu, and Ph, wherein optionally one or more hydrogen atoms are independently selected from deuterium, Me, i Pr, t substituted with Bu, Ph or CN; Here, R DABNA-3 Two or more adjacent substituents selected from do not form a monocyclic or polycyclic, aliphatic or aromatic or heteroaromatic, carbocyclic or heterocyclic ring system together.

[0505] In one embodiment of the present invention, at least one, preferably each, light-emitting layer B includes at least one, preferably each, small FWHM emitter S B comprises or consists of a structure according to the formula DABNA-I, R DABNA-6 are, in each occurrence, independently selected from the group consisting of: Hydrogen, deuterium, OPh (Ph = phenyl), SPh, CF 3 , CN, F, Si(C 1 -C 5 Alkyl) 3 , Si(Ph) 3 , C 1 -C 5 Alkyl, wherein optionally one or more hydrogen atoms are independently selected from deuterium, Ph, CN, CF 3 , or replaced by F, C 6 -C 18 Aryl, wherein optionally one or more hydrogen atoms are independently selected from deuterium, CN, CF 3 , F, C 1 -C 5 Alkyl, SiMe 3 , SiPh 3 , or C 6 -C 18 substituted with an aryl substituent; C 3 -C 17 Heteroaryl, wherein optionally one or more hydrogen atoms are independently selected from deuterium, CN, CF 3 , F, C 1 -C 5 Alkyl, SiMe 3 , SiPh 3 , or C 6 -C 18 substituted with an aryl substituent; N(C 6 -C 18 Aryl) 2 , N(C 3 -C 17 Heteroaryl)2 , and N(C 3 -C 17 Heteroaryl)(C 6 -C 18 aryl).

[0506] In one embodiment of the present invention, at least one, preferably each, light-emitting layer B includes at least one, preferably each, small FWHM emitter S B comprises or consists of a structure according to the formula DABNA-I, R DABNA-6 are, in each occurrence, independently selected from the group consisting of: Hydrogen, Deuterium, N(Ph) 2 , OPh (Ph = phenyl), SPh, CF 3 , CN, F, Si(Me) 3 , Si(Ph) 3 , C 1 -C 5 Alkyl, wherein optionally one or more hydrogen atoms are independently selected from deuterium, Ph, CN, CF 3 or replaced by F, C 6 -C 18 Aryl, wherein optionally one or more hydrogen atoms are independently selected from deuterium, CN, CF 3 , F, Me, i Pr, t Bu, SiMe 3 , SiPh 3 or replaced by Ph, C 3 -C 17 Heteroaryl, wherein optionally one or more hydrogen atoms are independently selected from deuterium, CN, CF 3 , F, Me, i Pr, t Bu, SiMe 3 , SiPh 3 Or replaced by Ph.

[0507] In one embodiment of the present invention, at least one, preferably each, light-emitting layer B includes at least one, preferably each, small FWHM emitter S B comprises or consists of a structure according to the formula DABNA-I, R DABNA-6 are, in each occurrence, independently selected from the group consisting of: Hydrogen, Deuterium, N(Ph) 2 ,CN,F,Me, i Pr, t Bu, Ph, wherein optionally one or more hydrogen atoms are independently selected from deuterium, CN, Me, i Pr, t substituted with Bu or Ph, C 3 -C 17 Heteroaryl, wherein optionally one or more hydrogen atoms are independently selected from deuterium, CN, Me, i Pr, t It is substituted with Bu or Ph.

[0508] In one embodiment of the present invention, at least one, preferably each, light-emitting layer B includes at least one, preferably each, small FWHM emitter S B comprises or consists of a structure according to the formula DABNA-I, R DABNA-6 are, in each occurrence, independently selected from the group consisting of: Hydrogen, deuterium, Me, i Pr, t Bu, Ph, wherein optionally one or more hydrogen atoms are independently selected from deuterium, Me, i Pr, t It is substituted with Bu or Ph.

[0509] In one embodiment of the present invention, at least one, preferably each, light-emitting layer B includes at least one, preferably each, small FWHM emitter S B comprises or consists of a structure according to the formula DABNA-I, Y a and / or Y b NR DABNA-3 , C(R DABNA-3 ) 2 , Si(R DABNA-3 ) 2 , or B.R. DABNA-3 If DABNA-3 is one or two adjacent rings A' and B' (Y a =NR DABNA-3 , C(R DABNA-3 ) 2 , Si(R DABNA-3 ) 2 , or B.R. DABNA-3 ), or A' and C'(Y b =NR DABNA-3 , C(R DABNA-3 ) 2 , Si(R DABNA-3 ) 2 , or B.R. DABNA-3 ) does not combine with

[0510] In one embodiment, a small FWHM emitter S in the context of the present invention B are optionally multimers (e.g., dimers) of the aforementioned formula DABNA-I, meaning that their structure comprises one or more subunits, each of which has a structure according to the formula DABNA-I. In this case, the skilled artisan will understand that two or more subunits according to the formula DABNA-I are, for example, joined, and preferably fused, to each other (i.e., share at least one bond, where there are no more respective substituents attached to the atom forming the bond). Also, two or more subunits can share at least one, and preferably exactly one, aromatic or heteroaromatic ring. This can be achieved, for example, by forming small FWHM emitters S BEach of the multimeric (e.g., dimeric) emitters S comprises two or more subunits having the structure of the formula DABNA-I, where the two subunits share an aromatic or heteroaromatic ring (i.e., each ring is part of two subunits). As a result, each multimeric (e.g., dimeric) emitter S B where the shared ring is present only once and does not include two whole subunits according to the formula DABNA-I. Nevertheless, one skilled in the art will understand that the emitter is still considered herein to be a multimer of the formula DABNA-I (e.g., a dimer if it includes two subunits having the structure of the formula DABNA-I). The same applies to multimers that share more than one ring. Preferably, the multimer is a dimer that includes two subunits each having the structure of the formula DABNA-I.

[0511] In one embodiment of the present invention, at least one, preferably each, light-emitting layer B includes at least one, preferably each, small FWHM emitter S B is a dimer of formula DABNA-I as described above, meaning that the emitter contains two subunits each having a structure according to the formula DABNA-I.

[0512] In one embodiment of the present invention, at least one, preferably each, light-emitting layer B includes at least one, preferably each, small FWHM emitter S B comprises or consists of two or more, preferably exactly two, structures (i.e., subunits) according to the formula DABNA-I, wherein the subunits share at least one, and preferably exactly one, aromatic or heteroaromatic ring (i.e., the ring is part of two structures of formula DABNA-I), where the shared ring is any one of rings A', B', and C' of formula DABNA-I, but R DABNA-1 , R DABNA-2 , R DABNA-3 , R DABNA-4 , R DABNA-5and R DABNA-6 , especially R DABNA-3 or any aromatic or heteroaromatic ring formed by two or more adjacent substituents as described above, where the shared ring may constitute the same or different moieties of two or more structures of formula DABNA-I that share said ring (i.e., the shared ring is, for example, ring C' of two structures of formula DABNA-I selectively contained in the emitter, or the shared ring is, for example, ring B' of one structure of formula DABNA-I and ring C' of the other structure selectively contained in the emitter).

[0513] In one embodiment of the present invention, at least one, preferably each, light-emitting layer B includes at least one, preferably each, small FWHM emitter S B comprises or consists of two or more, preferably exactly two, structures (i.e., subunits) according to the formula DABNA-I, Here, R DABNA-1 , R DABNA-2 , R DABNA-3 , R DABNA-4 , R DABNA-5 and R DABNA-6 at least one of the groups is replaced by a bond to a further chemical entity of formula DABNA-I, and / or R DABNA-1 , R DABNA-2 , R DABNA-3 , R DABNA-4 , R DABNA-5 and R DABNA-6 At least one hydrogen atom of any one of is replaced by a bond to a further chemical entity of formula DABNA-I.

[0514] The small FWHM emitter S according to the present invention B Non-limiting examples of emitters that include or consist of a structure according to the formula DABNA-I that can be used as

[0515] JPEG2025510014000138.jpg47170JPEG2025510014000139.jpg61170JPEG2025510014000140.jpg57170JPEG2025510014000141.jpg60170JPEG2025510014000142.jpg66170JPEG2025510014000143.jpg56170JPEG2025510014000144.jpg102170JPEG2025510014000145.jpg51170JPEG2025510014000146.jpg50170JPEG2025510014000147.jpg109170JPEG2025510014000148.jpg47170JPEG2025510014000149.jpg45170JPEG2025510014000150.jpg49170JPEG2025510014000151.jpg49170JPEG2025510014000152.jpg39170JPEG2025510014000153.jpg90170JPEG2025510014000154.jpg87170JPEG2025510014000155.jpg50170JPEG2025510014000156.jpg65170JPEG2025510014000157.jpg166170JPEG2025510014000158.jpg210170JPEG2025510014000159.jpg249170JPEG2025510014000160.jpg248170JPEG2025510014000161.jpg210170JPEG2025510014000162.jpg159170JPEG2025510014000163.jpg81170JPEG2025510014000164.jpg122170JPEG2025510014000165.jpg74170JPEG2025510014000166.jpg119170JPEG2025510014000167.jpg77170JPEG2025510014000168.jpg44170JPEG2025510014000169.jpg44170JPEG2025510014000170.jpg46170JPEG2025510014000171.jpg61170JPEG2025510014000172.jpg64170JPEG2025510014000173.jpg56170JPEG2025510014000174.jp g56170JPEG2025510014000175.jpg22170JPEG2025510014000176.jpg33170JPEG2025510014000177.jpg28 170JPEG2025510014000178.jpg46170JPEG2025510014000179.jpg27170JPEG2025510014000180.jpg39170 JPEG2025510014000181.jpg43170JPEG2025510014000182.jpg161170JPEG2025510014000183.jpg106170.

[0516] In the context of the present invention, a small FWHM emitter S B One group of emitters that can be used are emitters that include or consist of a structure according to the following formula BNE-1 or a multimer thereof:

[0517] [Chemical formula BNE-1] JPEG2025510014000184.jpg81170

[0518] Where: c and d are both integers and are independently selected from 0 and 1; e and f are both integers selected from 0 and 1, where e and f are (always) the same (i.e., both 0 or both 1); g and h are both integers selected from 0 and 1, where g and h are (always) the same (i.e., both 0 or both 1); If d is 0, then e and f are both 1; if d is 1, then e and f are both 0; If c is 0, then g and h are both 1; if c is 1, then g and h are both 0; V 1 is nitrogen (N) and CRBNE-V is selected from V 2 is nitrogen (N) and CR BNE-I is selected from X 3 is a direct bond, CR BNE-3 R BNE-4 , C=CR BNE-3 R BNE-4 , C=O, C=NR BNE-3 , N.R. BNE-3 , O, SiR BNE-3 R BNE-4 , S, S(O) and S(O) 2 is selected from the group consisting of Y 2 is a direct bond, CR BNE-3’ R BNE-4’ , C=CR BNE-3’ R BNE-4’ , C=O, C=NR BNE-3’ , N.R. BNE-3’ , O, SiR BNE-3’ R BNE-4’ , S, S(O) and S(O) 2 is selected from the group consisting of R BNE-1 , R BNE-2 , R BNE-1’ , R BNE-2’ , R BNE-3 , R BNE-4 , R BNE-3’ , R BNE-4’ , R BNE-I , R BNE-II , R BNE-III , R BNE-IV and R BNE-V are each independently selected from the group consisting of: Hydrogen, deuterium, N(R BNE-5 ) 2 , OR BNE-5 , Si(R BNE-5 ) 3 , B(OR BNE-5 ) 2 , B(R BNE-5 ) 2 , O.S.O. 2 R BNE-5 , C.F. 3 , CN, F, Cl, Br, I, C 1 -C 40 Alkyl, This can be optionally substituted with one or more substituents R BNE-5 is replaced by Here, one or more non-adjacent CH 2 The group is optionally R BNE-5 C=CR BNE-5 , C≡C, Si(R BNE-5 ) 2 , Ge(R BNE-5 ) 2 , Sn(R BNE-5 ) 2 , C=O, C=S, C=Se, C=NR BNE-5 , P(=O)(R BNE-5 ), SO, SO 2 , N.R. BNE-5 , O, S or CONR BNE-5 is replaced by C 1 -C 40 Alkoxy, This can be optionally substituted with one or more substituents R BNE-5 is replaced by Here, one or more non-adjacent CH 2 The group is optionally R BNE-5 C=CR BNE-5 , C≡C, Si(R BNE-5 ) 2 , Ge(R BNE-5 ) 2 , Sn(R BNE-5 ) 2 , C=O, C=S, C=Se, C=NR BNE-5 , P(=O)(R BNE-5 ), SO, SO 2 , N.R. BNE-5 , O, S or CONR BNE-5 is replaced by C 1 -C 40 Thioalkoxy, This can be optionally substituted with one or more substituents R BNE-5 is replaced by Here, one or more non-adjacent CH 2 The group is optionally R BNE-5 C=CR BNE-5 , C≡C, Si(R BNE-5 ) 2 , Ge(R BNE-5 ) 2 , Sn(R BNE-5 ) 2, C=O, C=S, C=Se, C=NR BNE-5 , P(=O)(R BNE-5 ), SO, SO 2 , N.R. BNE-5 , O, S or CONR BNE-5 is replaced by C 2 -C 40 Alkenyl, This can be optionally substituted with one or more substituents R BNE-5 is replaced by Here, one or more non-adjacent CH 2 The group is optionally R BNE-5 C=CR BNE-5 , C≡C, Si(R BNE-5 ) 2 , Ge(R BNE-5 ) 2 , Sn(R BNE-5 ) 2 , C=O, C=S, C=Se, C=NR BNE-5 , P(=O)(R BNE-5 ), SO, SO 2 , N.R. BNE-5 , O, S or CONR BNE-5 is replaced by C 2 -C 40 Alkynyl, This can be optionally substituted with one or more substituents R BNE-5 is replaced by Here, one or more non-adjacent CH 2 The group is optionally R BNE-5 C=CR BNE-5 , C≡C, Si(R BNE-5 ) 2 , Ge(R BNE-5 ) 2 , Sn(R BNE-5 ) 2 , C=O, C=S, C=Se, C=NR BNE-5 , P(=O)(R BNE-5 ), SO, SO 2 , N.R. BNE-5 , O, S or CONR BNE-5 is replaced by Optionally, one or more substituents R BNE-5 C replaced with 6 -C 60 Aryl, and Optionally, one or more substituents R BNE-5 C replaced with 2 -C 57 Heteroaryl, R BNE-d , R BNE-d’ and R BNE-e are each independently selected from the group consisting of: Hydrogen, deuterium, N(R BNE-5 ) 2 , OR BNE-5 , Si(R BNE-5 ) 3 , B(OR BNE-5 ) 2 , B(R BNE-5 ) 2 , O.S.O. 2 R BNE-5 , C.F. 3 , CN, F, Cl, Br, I, C 1 -C 40 Alkyl, This can be optionally substituted with one or more substituents R BNE-a is replaced by Here, one or more non-adjacent CH 2 The group is optionally R BNE-5 C=CR BNE-5 , C≡C, Si(R BNE-5 ) 2 , Ge(R BNE-5 ) 2 , Sn(R BNE-5 ) 2 , C=O, C=S, C=Se, C=NR BNE-5 , P(=O)(R BNE-5 ), SO, SO 2 , N.R. BNE-5 , O, S or CONR BNE-5 is replaced by C 1 -C 40 Alkoxy, This can be optionally substituted with one or more substituents R BNE-a is replaced by Here, one or more non-adjacent CH 2 The group is optionally R BNE-5 C=CR BNE-5 , C≡C, Si(R BNE-5 ) 2 , Ge(R BNE-5 )2 , Sn(R BNE-5 ) 2 , C=O, C=S, C=Se, C=NR BNE-5 , P(=O)(R BNE-5 ), SO, SO 2 , N.R. BNE-5 , O, S or CONR BNE-5 is replaced by C 1 -C 40 Thioalkoxy, This can be optionally substituted with one or more substituents R BNE-a is replaced by Here, one or more non-adjacent CH 2 The group is optionally R BNE-5 C=CR BNE-5 , C≡C, Si(R BNE-5 ) 2 , Ge(R BNE-5 ) 2 , Sn(R BNE-5 ) 2 , C=O, C=S, C=Se, C=NR BNE-5 , P(=O)(R BNE-5 ), SO, SO 2 , N.R. BNE-5 , O, S or CONR BNE-5 is replaced by C 2 -C 40 Alkenyl, This can be optionally substituted with one or more substituents R BNE-a is replaced by Here, one or more non-adjacent CH 2 The group is optionally R BNE-5 C=CR BNE-5 , C≡C, Si(R BNE-5 ) 2 , Ge(R BNE-5 ) 2 , Sn(R BNE-5 ) 2 , C=O, C=S, C=Se, C=NR BNE-5 , P(=O)(R BNE-5 ), SO, SO 2 , N.R. BNE-5 , O, S or CONR BNE-5 is replaced by C 2 -C 40 Alkynyl, This can be optionally substituted with one or more substituents R BNE-a is replaced by Here, one or more non-adjacent CH 2 The group is optionally R BNE-5 C=CR BNE-5 , C≡C, Si(R BNE-5 ) 2 , Ge(R BNE-5 ) 2 , Sn(R BNE-5 ) 2 , C=O, C=S, C=Se, C=NR BNE-5 , P(=O)(R BNE-5 ), SO, SO 2 , N.R. BNE-5 , O, S or CONR BNE-5 is replaced by Optionally, one or more substituents R BNE-a C replaced with 6 -C 60 Aryl, and Optionally, one or more substituents R BNE-a C replaced with 2 -C 57 Heteroaryl, R BNE-a are, in each occurrence, independently selected from the group consisting of: Hydrogen, deuterium, N(R BNE-5 ) 2 , OR BNE-5 , Si(R BNE-5 ) 3 , B(OR BNE-5 ) 2 , B(R BNE-5 ) 2 , O.S.O. 2 R BNE-5 , C.F. 3 , CN, F, Cl, Br, I, C 1 -C 40 Alkyl, This can be optionally substituted with one or more substituents R BNE-5 is replaced by Here, one or more non-adjacent CH 2 The group is optionally R BNE-5 C=CR BNE-5 , C≡C, Si(R BNE-5 ) 2 , Ge(RBNE-5 ) 2 , Sn(R BNE-5 ) 2 , C=O, C=S, C=Se, C=NR BNE-5 , P(=O)(R BNE-5 ), SO, SO 2 , N.R. BNE-5 , O, S or CONR BNE-5 is replaced by C 1 -C 40 Alkoxy, This can be optionally substituted with one or more substituents R BNE-5 is replaced by Here, one or more non-adjacent CH 2 The group is optionally R BNE-5 C=CR BNE-5 , C≡C, Si(R BNE-5 ) 2 , Ge(R BNE-5 ) 2 , Sn(R BNE-5 ) 2 , C=O, C=S, C=Se, C=NR BNE-5 , P(=O)(R BNE-5 ), SO, SO 2 , N.R. BNE-5 , O, S or CONR BNE-5 is replaced by C 1 -C 40 Thioalkoxy, This can be optionally substituted with one or more substituents R BNE-5 is replaced by Here, one or more non-adjacent CH 2 The group is optionally R BNE-5 C=CR BNE-5 , C≡C, Si(R BNE-5 ) 2 , Ge(R BNE-5 ) 2 , Sn(R BNE-5 ) 2 , C=O, C=S, C=Se, C=NR BNE-5 , P(=O)(R BNE-5 ), SO, SO 2 , N.R. BNE-5 , O, S or CONR BNE-5 is replaced by C 2 -C40 Alkenyl, This can be optionally substituted with one or more substituents R BNE-5 is replaced by Here, one or more non-adjacent CH 2 The group is optionally R BNE-5 C=CR BNE-5 , C≡C, Si(R BNE-5 ) 2 , Ge(R BNE-5 ) 2 , Sn(R BNE-5 ) 2 , C=O, C=S, C=Se, C=NR BNE-5 , P(=O)(R BNE-5 ), SO, SO 2 , N.R. BNE-5 , O, S or CONR BNE-5 is replaced by C 2 -C 40 Alkynyl, This can be optionally substituted with one or more substituents R BNE-5 is replaced by Here, one or more non-adjacent CH 2 The group is optionally R BNE-5 C=CR BNE-5 , C≡C, Si(R BNE-5 ) 2 , Ge(R BNE-5 ) 2 , Sn(R BNE-5 ) 2 , C=O, C=S, C=Se, C=NR BNE-5 , P(=O)(R BNE-5 ), SO, SO 2 , N.R. BNE-5 , O, S or CONR BNE-5 is replaced by Optionally, one or more substituents R BNE-5 C replaced with 6 -C 60 Aryl, and Optionally, one or more substituents R BNE-5 C replaced with 2 -C 57 Heteroaryl, R BNE-5 are, in each occurrence, independently selected from the group consisting of: Hydrogen, deuterium, N(RBNE-6 ) 2 , OR BNE-6 , Si(R BNE-6 ) 3 , B(OR BNE-6 ) 2 , B(R BNE-6 ) 2 , O.S.O. 2 R BNE-6 , C.F. 3 , CN, F, Cl, Br, I, C 1 -C 40 Alkyl, This can be optionally substituted with one or more substituents R BNE-6 is replaced by Here, one or more non-adjacent CH 2 The group is optionally R BNE-6 C=CR BNE-6 , C≡C, Si(R BNE-6 ) 2 , Ge(R BNE-6 ) 2 , Sn(R BNE-6 ) 2 , C=O, C=S, C=Se, C=NR BNE-6 , P(=O)(R BNE-6 ), SO, SO 2 , N.R. BNE-6 , O, S or CONR BNE-6 is replaced by C 1 -C 40 Alkoxy, This can be optionally substituted with one or more substituents R BNE-6 is replaced by Here, one or more non-adjacent CH 2 The group is optionally R BNE-6 C=CR BNE-6 , C≡C, Si(R BNE-6 ) 2 , Ge(R BNE-6 ) 2 , Sn(R BNE-6 ) 2 , C=O, C=S, C=Se, C=NR BNE-6 , P(=O)(R BNE-6 ), SO, SO 2 , N.R. BNE-6 , O, S or CONR BNE-6 is replaced by C1 -C 40 Thioalkoxy, This can be optionally substituted with one or more substituents R BNE-6 is replaced by Here, one or more non-adjacent CH 2 The group is optionally R BNE-6 C=CR BNE-6 , C≡C, Si(R BNE-6 ) 2 , Ge(R BNE-6 ) 2 , Sn(R BNE-6 ) 2 , C=O, C=S, C=Se, C=NR BNE-6 , P(=O)(R BNE-6 ), SO, SO 2 , N.R. BNE-6 , O, S or CONR BNE-6 is replaced by C 2 -C 40 Alkenyl, This can be optionally substituted with one or more substituents R BNE-6 is replaced by Here, one or more non-adjacent CH 2 The group is optionally R BNE-6 C=CR BNE-6 , C≡C, Si(R BNE-6 ) 2 , Ge(R BNE-6 ) 2 , Sn(R BNE-6 ) 2 , C=O, C=S, C=Se, C=NR BNE-6 , P(=O)(R BNE-6 ), SO, SO 2 , N.R. BNE-6 , O, S or CONR BNE-6 is replaced by C 2 -C 40 Alkynyl, This can be optionally substituted with one or more substituents R BNE-6 is replaced by Here, one or more non-adjacent CH 2 The group is optionally R BNE-6 C=CR BNE-6 , C≡C, Si(R BNE-6 ) 2 , Ge(R BNE-6) 2 , Sn(R BNE-6 ) 2 , C=O, C=S, C=Se, C=NR BNE-6 , P(=O)(R BNE-6 ), SO, SO 2 , N.R. BNE-6 , O, S or CONR BNE-6 is replaced by Optionally, one or more substituents R BNE-6 C replaced with 6 -C 60 Aryl, and Optionally, one or more substituents R BNE-6 C replaced with 2 -C 57 Heteroaryl, R BNE-6 are, in each occurrence, independently selected from the group consisting of: Hydrogen, deuterium, OPh, CF 3 ,C.N.,F. C 1 -C 5 Alkyl, wherein optionally one or more hydrogen atoms are independently selected from deuterium, CN, CF 3 , substituted with Ph or F; C 1 -C 5 Alkoxy, wherein optionally one or more hydrogen atoms are independently selected from deuterium, CN, CF 3 , or replaced by F, C 1 -C 5 Thioalkoxy, wherein optionally one or more hydrogen atoms are independently selected from deuterium, CN, CF 3 , or replaced by F, C 2 -C 5 Alkenyl, wherein optionally one or more hydrogen atoms are independently selected from deuterium, CN, CF 3 , or replaced by F, C 2 -C 5 Alkynyl, wherein optionally one or more hydrogen atoms are independently selected from deuterium, CN, CF 3 , or replaced by F, Optionally, 1 or more C 1 -C 5 C substituted with alkyl substituents 6 -C 18 Aryl, Optionally, 1 or more C 1 -C 5 C substituted with alkyl substituents 2 -C 17 Heteroaryl, N(C 6 -C 18 Aryl) 2 , N(C 2 -C 17 Heteroaryl) 2 , and N(C 2 -C 17 Heteroaryl)(C 6 -C 18 aryl), Here, R BNE-III and R BNE-e selectively bonds to form a direct single bond, Here, the substituent R BNE-a , R BNE-d , R BNE-d’ , R BNE-e , R BNE-3’ , R BNE-4’ and R BNE-5 two or more of which together optionally form a monocyclic or polycyclic, aliphatic or aromatic, carbocyclic or heterocyclic and / or benzo-fused ring system; Here, the substituent R BNE-1 , R BNE-2 , R BNE-1’ , R BNE-2’ , R BNE-3 , R BNE-4 , R BNE-5 , R BNE-I , R BNE-II , R BNE-III , R BNE-IV and R BNE-V two or more of which together optionally form a monocyclic or polycyclic, aliphatic or aromatic, carbocyclic or heterocyclic and / or benzo-fused ring system; wherein optionally two or more, preferably two, structures of the formula BNE-1 are joined to each other, preferably fused to each other by sharing at least one, more preferably exactly one bond; wherein optionally two or more, preferably two, structures of formula BNE-1 are present in the emitter and share at least one, preferably exactly one, aromatic or heteroaromatic ring (i.e., the ring is part of two structures of formula BNE-1), which is preferably any one of rings a, b, and c' of formula BNE-1, but R BNE-1 , R BNE-2 , R BNE-1’ , R BNE-2’ , R BNE-3 , R BNE-4 , R BNE-3’ , R BNE-4’ , R BNE-5 , R BNE-6 , R BNE-I , R BNE-II , R BNE-III , R BNE-IV , R BNE-V , R BNE-a , R BNE-e , R BNE-d and R BNE-d’ or any aromatic or heteroaromatic ring formed by two or more substituents as above, where the shared ring may constitute the same or different moieties of two or more structures of formula BNE-1 that share said ring (i.e. the shared ring is, for example, ring c' of two structures of formula BNE-1 selectively contained in the emitter, or the shared ring is, for example, ring b of one structure of formula BNE-1 selectively contained in the emitter and ring c' of the other structure), Here, optionally, R BNE-1 , R BNE-2 , R BNE-1’ , R BNE-2’ , R BNE-3 , R BNE-4 , R BNE-5 , R BNE-3’ , R BNE-4’ , R BNE-6 , R BNE-I , R BNE-II, R BNE-III , R BNE-IV , R BNE-V , R BNE-a , R BNE-e , R BNE-d or R BNE-d’ is replaced by a bond to a further chemical entity of formula BNE-1, and / or R BNE-1 , R BNE-2 , R BNE-1’ , R BNE-2’ , R BNE-3 , R BNE-4 , R BNE-5 , R BNE-3’ , R BNE-4’ , R BNE-6 , R BNE-I , R BNE-II , R BNE-III , R BNE-IV , R BNE-V , R BNE-a , R BNE-e , R BNE-d or R BNE-d’ At least one hydrogen atom of any one of is replaced by a bond to a further chemical entity of formula BNE-1.

[0519] In one embodiment of the present invention, one or more small FWHM emitters S B At least one of the compounds includes a structure according to the formula BNE-1.

[0520] In one embodiment of the present invention, each small FWHM emitter S B includes a structure according to the chemical formula BNE-1.

[0521] In one embodiment of the present invention, one or more small FWHM emitters S B At least one of the compounds has a structure according to the chemical formula BNE-1.

[0522] In one embodiment of the present invention, each small FWHM emitter S B has a structure according to the chemical formula BNE-1.

[0523] In one embodiment of the present invention, at least one, and preferably each, of one or more small FWHM emitters S B comprises or consists of a structure according to the chemical formula BNE-1, V 1 is CR BNE-V and V 2 is CR BNE-I It is.

[0524] In one embodiment of the present invention, at least one, and preferably each, of one or more small FWHM emitters S B comprises or consists of a structure according to the chemical formula BNE-1, V 1 and V 2 are both nitrogen (N).

[0525] In one embodiment of the present invention, at least one, and preferably each, of one or more small FWHM emitters S B comprises or consists of a structure according to the chemical formula BNE-1, V 1 is nitrogen (N) and V 2 is CR BNE-I It is.

[0526] In one embodiment of the present invention, at least one, and preferably each, of one or more small FWHM emitters S B comprises or consists of a structure according to the chemical formula BNE-1, V 1 is CR BNE-V and V 2 is nitrogen (N).

[0527] In one embodiment of the present invention, at least one, and preferably each, of one or more small FWHM emitters S B comprises or consists of a structure according to the formula BNE-1, where c and d are both 0.

[0528] In one embodiment of the present invention, at least one, and preferably each, of one or more small FWHM emitters S Bcomprises or consists of a structure according to the chemical formula BNE-1, where c is 0 and d is 1.

[0529] In one embodiment of the present invention, at least one, and preferably each, of one or more small FWHM emitters S B comprises or consists of a structure according to the chemical formula BNE-1, where c is 1 and d is 0.

[0530] In one embodiment of the present invention, at least one, and preferably each, of one or more small FWHM emitters S B comprises or consists of a structure according to the formula BNE-1, where c and d are both 1.

[0531] In one embodiment of the present invention, at least one, and preferably each, of one or more small FWHM emitters S B comprises or consists of a structure according to the formula BNE-1, X 3 is a direct bond, CR BNE-3 R BNE-4 , C=O, NR BNE-3 , O, S, SiR BNE-3 R BNE-4 is selected from the group consisting of Y 2 is a direct bond, CR BNE-3’ R BNE-4’ , C=O, NR BNE-3’ , O, S, SiR BNE-3’ R BNE-4’ is selected from the group consisting of:

[0532] In one embodiment of the present invention, at least one, and preferably each, of one or more small FWHM emitters S B comprises or consists of a structure according to the formula BNE-1, X 3 is a direct bond, CR BNE-3 R BNE-4 , N.R. BNE-3 , O, S, SiR BNE-3 R BNE-4 is selected from the group consisting of Y 2 is a direct bond, CR BNE-3’ R BNE-4’ , N.R. BNE-3’ , O, S, SiR BNE-3’ R BNE-4’ is selected from the group consisting of:

[0533] In one embodiment of the present invention, at least one, and preferably each, of one or more small FWHM emitters S B comprises or consists of a structure according to the formula BNE-1, X 3 is a direct bond, CR BNE-3 R BNE-4 , N.R. BNE-3 , O, S, SiR BNE-3 R BNE-4 is selected from the group consisting of Y 2 is a direct bond.

[0534] In one embodiment of the present invention, at least one, and preferably each, of one or more small FWHM emitters S B comprises or consists of a structure according to the formula BNE-1, X 3 is a direct bond or NR BNE-3 and Y 2 is a direct bond.

[0535] In one embodiment of the present invention, at least one, and preferably each, of one or more small FWHM emitters S B comprises or consists of a structure according to the formula BNE-1, X 3 is NR BNE-3 and Y 2 is a direct bond.

[0536] In one embodiment of the present invention, at least one, and preferably each, of one or more small FWHM emitters S B comprises or consists of a structure according to the formula BNE-1, R BNE-1 , R BNE-2 , R BNE-1’ , R BNE-2’ , R BNE-3 , R BNE-4 , R BNE-3’ , R BNE-4’ , R BNE-I , R BNE-II , R BNE-III , R BNE-IV and R BNE-V are each independently selected from the group consisting of: Hydrogen, deuterium, N(R BNE-5 ) 2 , OR BNE-5 , Si(R BNE-5 ) 3 , B(OR BNE-5 ) 2 , B(R BNE-5 ) 2 , O.S.O. 2 R BNE-5 , C.F. 3 , CN, F, Cl, Br, I, C 1 -C 40 Alkyl, This can be optionally substituted with one or more substituents R BNE-5 is replaced by Here, one or more non-adjacent CH 2 The group is optionally R BNE-5 C=CR BNE-5 , C≡C, Si(R BNE-5 ) 2 , Ge(R BNE-5 ) 2 , Sn(R BNE-5 ) 2 , C=O, C=S, C=Se, C=NR BNE-5 , P(=O)(R BNE-5 ), SO, SO 2 , N.R. BNE-5 , O, S or CONR BNE-5 is replaced by C 1 -C 40 Alkoxy, This can be optionally substituted with one or more substituents R BNE-5 is replaced by Here, one or more non-adjacent CH 2 The group is optionally RBNE-5 C=CR BNE-5 , C≡C, Si(R BNE-5 ) 2 , Ge(R BNE-5 ) 2 , Sn(R BNE-5 ) 2 , C=O, C=S, C=Se, C=NR BNE-5 , P(=O)(R BNE-5 ), SO, SO 2 , N.R. BNE-5 , O, S or CONR BNE-5 is replaced by C 1 -C 40 Thioalkoxy, This can be optionally substituted with one or more substituents R BNE-5 is replaced by Here, one or more non-adjacent CH 2 The group is optionally R BNE-5 C=CR BNE-5 , C≡C, Si(R BNE-5 ) 2 , Ge(R BNE-5 ) 2 , Sn(R BNE-5 ) 2 , C=O, C=S, C=Se, C=NR BNE-5 , P(=O)(R BNE-5 ), SO, SO 2 , N.R. BNE-5 , O, S or CONR BNE-5 is replaced by C 2 -C 40 Alkenyl, This can be optionally substituted with one or more substituents R BNE-5 is replaced by Here, one or more non-adjacent CH 2 The group is optionally R BNE-5 C=CR BNE-5 , C≡C, Si(R BNE-5 ) 2 , Ge(R BNE-5 ) 2 , Sn(R BNE-5 ) 2 , C=O, C=S, C=Se, C=NR BNE-5 , P(=O)(R BNE-5 ), SO, SO 2 , N.R.BNE-5 , O, S or CONR BNE-5 is replaced by C 2 -C 40 Alkynyl, This can be optionally substituted with one or more substituents R BNE-5 is replaced by Here, one or more non-adjacent CH 2 The group is optionally R BNE-5 C=CR BNE-5 , C≡C, Si(R BNE-5 ) 2 , Ge(R BNE-5 ) 2 , Sn(R BNE-5 ) 2 , C=O, C=S, C=Se, C=NR BNE-5 , P(=O)(R BNE-5 ), SO, SO 2 , N.R. BNE-5 , O, S or CONR BNE-5 is replaced by Optionally, one or more substituents R BNE-5 C replaced with 6 -C 60 Aryl, and Optionally, one or more substituents R BNE-5 C replaced with 2 -C 57 Heteroaryl, R BNE-d , R BNE-d’ and R BNE-e are each independently selected from the group consisting of: Hydrogen, deuterium, CF 3 , CN, F, Cl, Br, I, C 1 -C 40 Alkyl, This can be optionally substituted with one or more substituents R BNE-a is replaced by Here, one or more non-adjacent CH 2 The group is optionally R BNE-5 C=CR BNE-5 , C≡C, Si(R BNE-5 ) 2 , Ge(R BNE-5 ) 2 , Sn(R BNE-5 ) 2, C=O, C=S, C=Se, C=NR BNE-5 , P(=O)(R BNE-5 ), SO, SO 2 , N.R. BNE-5 , O, S or CONR BNE-5 is replaced by Optionally, one or more substituents R BNE-a C replaced with 6 -C 60 Aryl, and Optionally, one or more substituents R BNE-a C replaced with 2 -C 57 Heteroaryl, R BNE-a are, in each occurrence, independently selected from the group consisting of: Hydrogen, deuterium, N(R BNE-5 ) 2 , OR BNE-5 , Si(R BNE-5 ) 3 , B(OR BNE-5 ) 2 , B(R BNE-5 ) 2 , O.S.O. 2 R BNE-5 , C.F. 3 , CN, F, Cl, Br, I, C 1 -C 40 Alkyl, This can be optionally substituted with one or more substituents R BNE-5 is replaced by Here, one or more non-adjacent CH 2 The group is optionally R BNE-5 C=CR BNE-5 , C≡C, Si(R BNE-5 ) 2 , Ge(R BNE-5 ) 2 , Sn(R BNE-5 ) 2 , C=O, C=S, C=Se, C=NR BNE-5 , P(=O)(R BNE-5 ), SO, SO 2 , N.R. BNE-5 , O, S or CONR BNE-5 is replaced by C 1 -C 40 Alkoxy, This can be optionally substituted with one or more substituents R BNE-5 is replaced by Here, one or more non-adjacent CH 2 The group is optionally R BNE-5 C=CR BNE-5 , C≡C, Si(R BNE-5 ) 2 , Ge(R BNE-5 ) 2 , Sn(R BNE-5 ) 2 , C=O, C=S, C=Se, C=NR BNE-5 , P(=O)(R BNE-5 ), SO, SO 2 , N.R. BNE-5 , O, S or CONR BNE-5 is replaced by C 1 -C 40 Thioalkoxy, This can be optionally substituted with one or more substituents R BNE-5 is replaced by Here, one or more non-adjacent CH 2 The group is optionally R BNE-5 C=CR BNE-5 , C≡C, Si(R BNE-5 ) 2 , Ge(R BNE-5 ) 2 , Sn(R BNE-5 ) 2 , C=O, C=S, C=Se, C=NR BNE-5 , P(=O)(R BNE-5 ), SO, SO 2 , N.R. BNE-5 , O, S or CONR BNE-5 is replaced by C 2 -C 40 Alkenyl, This can be optionally substituted with one or more substituents R BNE-5 is replaced by Here, one or more non-adjacent CH 2 The group is optionally R BNE-5 C=CR BNE-5 , C≡C, Si(R BNE-5 ) 2 , Ge(R BNE-5 ) 2 , Sn(R BNE-5 )2 , C=O, C=S, C=Se, C=NR BNE-5 , P(=O)(R BNE-5 ), SO, SO 2 , N.R. BNE-5 , O, S or CONR BNE-5 is replaced by C 2 -C 40 Alkynyl, This can be optionally substituted with one or more substituents R BNE-5 is replaced by Here, one or more non-adjacent CH 2 The group is optionally R BNE-5 C=CR BNE-5 , C≡C, Si(R BNE-5 ) 2 , Ge(R BNE-5 ) 2 , Sn(R BNE-5 ) 2 , C=O, C=S, C=Se, C=NR BNE-5 , P(=O)(R BNE-5 ), SO, SO 2 , N.R. BNE-5 , O, S or CONR BNE-5 is replaced by Optionally, one or more substituents R BNE-5 C replaced with 6 -C 60 Aryl, and Optionally, one or more substituents R BNE-5 C replaced with 2 -C 57 Heteroaryl, R BNE-5 are, in each occurrence, independently selected from the group consisting of: Hydrogen, deuterium, N(R BNE-6 ) 2 , OR BNE-6 , Si(R BNE-6 ) 3 , B(OR BNE-6 ) 2 , B(R BNE-6 ) 2 , O.S.O. 2 R BNE-6 , C.F. 3 , CN, F, Cl, Br, I, C 1 -C40 Alkyl, This can be optionally substituted with one or more substituents R BNE-6 is replaced by Here, one or more non-adjacent CH 2 The group is optionally R BNE-6 C=CR BNE-6 , C≡C, Si(R BNE-6 ) 2 , Ge(R BNE-6 ) 2 , Sn(R BNE-6 ) 2 , C=O, C=S, C=Se, C=NR BNE-6 , P(=O)(R BNE-6 ), SO, SO 2 , N.R. BNE-6 , O, S or CONR BNE-6 is replaced by C 1 -C 40 Alkoxy, This can be optionally substituted with one or more substituents R BNE-6 is replaced by Here, one or more non-adjacent CH 2 The group is optionally R BNE-6 C=CR BNE-6 , C≡C, Si(R BNE-6 ) 2 , Ge(R BNE-6 ) 2 , Sn(R BNE-6 ) 2 , C=O, C=S, C=Se, C=NR BNE-6 , P(=O)(R BNE-6 ), SO, SO 2 , N.R. BNE-6 , O, S or CONR BNE-6 is replaced by C 1 -C 40 Thioalkoxy, This can be optionally substituted with one or more substituents R BNE-6 is replaced by Here, one or more non-adjacent CH 2 The group is optionally R BNE-6 C=CR BNE-6 , C≡C, Si(R BNE-6 ) 2 , Ge(R BNE-6 ) 2, Sn(R BNE-6 ) 2 , C=O, C=S, C=Se, C=NR BNE-6 , P(=O)(R BNE-6 ), SO, SO 2 , N.R. BNE-6 , O, S or CONR BNE-6 is replaced by C 2 -C 40 Alkenyl, This can be optionally substituted with one or more substituents R BNE-6 is replaced by Here, one or more non-adjacent CH 2 The group is optionally R BNE-6 C=CR BNE-6 , C≡C, Si(R BNE-6 ) 2 , Ge(R BNE-6 ) 2 , Sn(R BNE-6 ) 2 , C=O, C=S, C=Se, C=NR BNE-6 , P(=O)(R BNE-6 ), SO, SO 2 , N.R. BNE-6 , O, S or CONR BNE-6 is replaced by C 2 -C 40 Alkynyl, This can be optionally substituted with one or more substituents R BN...

Claims

1. An organic electroluminescent device comprising at least one emitting layer B comprising: (i) The lowest excited singlet state energy level E (S Ｈ ) and the lowest excited triplet state energy level E (T Ｈ At least one host material H Ｂ , (ii) The lowest excited singlet state energy level E (S Ｐ ) and the lowest excited triplet state energy level E (T Ｐ At least one phosphorescent material P Ｂ , and (iii) The lowest excited singlet state energy level E (S Ｓ ) and the lowest excited triplet state energy level E (T Ｓ At least one small full width at half maximum (FWHM) emitter S Ｂ , where S Ｂ emits light having a full width at half maximum (FWHM) of 0.25 eV or less; (iv) The lowest excited singlet state energy level E (S Ｅ ) and the lowest excited triplet state energy level E (T Ｅ At least one thermally activated delayed fluorescent (TADF) material E Ｂ , Here, the relationship expressed by the following formula (1) is applied: E(T1) Ｈ )>E(D1 Ｐ ) (1)、 Here, each TADF material E Ｂ includes the following: one or more first chemical moieties, each independently selected from amino, indolyl, carbazolyl and derivatives thereof, each of which is optionally substituted, wherein the groups are attached to the core structure of the respective TADF molecule via a nitrogen (N) or carbon (C) atom, and the substituents attached to the groups can form a monocyclic or polycyclic, aliphatic or aromatic, carbocyclic or heterocyclic ring system; one or more second chemical moieties independently selected from the group consisting of: —CN and an optionally substituted 1,3,5-triazinyl group; Here, a small full width at half maximum (FWHM) emitter S Ｂ is represented by the chemical formula BNE-2 or a multimer thereof, [Chemical formula BNE-2] In the chemical formula BNE-2, Z ＢＮＥ is selected from the group consisting of O and S; R ａｂ is independently selected in each occurrence from the group consisting of: Hydrogen, deuterium, N(R ＢＮＥ５ｂ ) ２ , OR ＢＮＥ５ｂ , Si(R ＢＮＥ５ｂ ) ３ , B(OR ＢＮＥ５ｂ ) ２ , B(R ＢＮＥ５ｂ ) ２ , OSO ２ R ＢＮＥ５ｂ , C.F. ３ ,CN,F,Br,I, C １ -C ４０ Alkyl, This may optionally be one or more substituents R ＢＮＥ５ｂ is replaced by Here, one or more non-adjacent CH ２ The group is optionally R ＢＮＥ５ｂ C=CR ＢＮＥ５ｂ , C≡C, Si(R ＢＮＥ５ｂ ) ２ , Ge(R ＢＮＥ５ｂ ) ２ , Sn(R ＢＮＥ５ｂ ) ２ , C=O, C=S, C=Se, C=NR ＢＮＥ５ｂ , P(=O)(R ＢＮＥ５ｂ ), SO, SO ２ , N.R. ＢＮＥ５ｂ , O, S or CONR ＢＮＥ５ｂ is replaced by C １ -C ４０ Alkoxy, This may optionally be one or more substituents R ＢＮＥ５ｂ is replaced by Here, one or more non-adjacent CH ２ The group is optionally R ＢＮＥ５ｂ C=CR ＢＮＥ５ｂ , C≡C, Si(R ＢＮＥ５ｂ ) ２ , Ge(R ＢＮＥ５ｂ ) ２ , Sn(R ＢＮＥ５ｂ ) ２ , C=O, C=S, C=Se, C=NR ＢＮＥ５ｂ , P(=O)(R ＢＮＥ５ｂ ), SO, SO ２ , N.R. ＢＮＥ５ｂ , O, S or CONR ＢＮＥ５ｂ is replaced by C １ -C ４０ Thioalkoxy, This may optionally be one or more substituents R ＢＮＥ５ｂ is replaced by Here, one or more non-adjacent CH ２ The group is optionally R ＢＮＥ５ｂ C=CR ＢＮＥ５ｂ , C≡C, Si(R ＢＮＥ５ｂ ) ２ , Ge(R ＢＮＥ５ｂ ) ２ , Sn(R ＢＮＥ５ｂ ) ２ , C=O, C=S, C=Se, C=NR ＢＮＥ５ｂ , P(=O)(R ＢＮＥ５ｂ ), SO, SO ２ , N.R. ＢＮＥ５ｂ , O, S or CONR ＢＮＥ５ｂ is replaced by C ２ -C ４０ Alkenyl, This may optionally be one or more substituents R ＢＮＥ５ｂ is replaced by Here, one or more non-adjacent CH ２ The group is optionally R ＢＮＥ５ｂ C=CR ＢＮＥ５ｂ , C≡C, Si(R ＢＮＥ５ｂ ) ２ , Ge(R ＢＮＥ５ｂ ) ２ , Sn(R ＢＮＥ５ｂ ) ２ , C=O, C=S, C=Se, C=NR ＢＮＥ５ｂ , P(=O)(R ＢＮＥ５ｂ ), SO, SO ２ , N.R. ＢＮＥ５ｂ , O, S or CONR ＢＮＥ５ｂ is replaced by C ２ -C ４０ Alkynyl, This may optionally be one or more substituents R ＢＮＥ５ｂ is replaced by Here, one or more non-adjacent CH ２ The group is optionally R ＢＮＥ５ｂ C=CR ＢＮＥ５ｂ , C≡C, Si(R ＢＮＥ５ｂ ) ２ , Ge(R ＢＮＥ５ｂ ) ２ , Sn(R ＢＮＥ５ｂ ) ２ , C=O, C=S, C=Se, C=NR ＢＮＥ５ｂ , P(=O)(R ＢＮＥ５ｂ ), SO, SO ２ , N.R. ＢＮＥ５ｂ , O, S or CONR ＢＮＥ５ｂ is replaced by Optionally, one or more substituents R ＢＮＥ５ｂ C substituted with ６ -C ６０ Aryl, Optionally, one or more substituents R ＢＮＥ５ｂ C substituted with ２ -C ５７ Heteroaryl, and A single bond or linking group connecting the two chemical structures of formula BNE-2 together; R ＢＮＥ５ｂ are, in each occurrence, independently selected from the group consisting of: Hydrogen, deuterium, N(R ＢＮＥ６ｂ ) ２ , OR ＢＮＥ６ｂ , Si(R ＢＮＥ６ｂ ) ３ , B(OR ＢＮＥ６ｂ ) ２ , B(R ＢＮＥ６ｂ ) ２ , OSO ２ R ＢＮＥ６ｂ , C.F. ３ ,CN,F,Br,I, C １ -C ４０ Alkyl, This may optionally be one or more substituents R ＢＮＥ６ｂ is replaced by Here, one or more non-adjacent CH ２ The group is optionally R ＢＮＥ６ｂ C=CR ＢＮＥ６ｂ , C≡C, Si(R ＢＮＥ６ｂ ) ２ , Ge(R ＢＮＥ６ｂ ) ２ , Sn(R ＢＮＥ６ｂ ) ２ , C=O, C=S, C=Se, C=NR ＢＮＥ６ｂ , P(=O)(R ＢＮＥ６ｂ ), SO, SO ２ , N.R. ＢＮＥ６ｂ , O, S or CONR ＢＮＥ６ｂ is replaced by C １ -C ４０ Alkoxy, This may optionally be one or more substituents R ＢＮＥ６ｂ is replaced by Here, one or more non-adjacent CH ２ The group is optionally R ＢＮＥ６ｂ C=CR ＢＮＥ６ｂ , C≡C, Si(R ＢＮＥ６ｂ ) ２ , Ge(R ＢＮＥ６ｂ ) ２ , Sn(R ＢＮＥ６ｂ ) ２ , C=O, C=S, C=Se, C=NR ＢＮＥ６ｂ , P(=O)(R ＢＮＥ６ｂ ), SO, SO ２ , N.R. ＢＮＥ６ｂ , O, S or CONR ＢＮＥ６ｂ is replaced by C １ -C ４０ Thioalkoxy, This may optionally be one or more substituents R ＢＮＥ６ｂ is replaced by Here, one or more non-adjacent CH ２ The group is optionally R ＢＮＥ６ｂ C=CR ＢＮＥ６ｂ , C≡C, Si(R ＢＮＥ６ｂ ) ２ , Ge(R ＢＮＥ６ｂ ) ２ , Sn(R ＢＮＥ６ｂ ) ２ , C=O, C=S, C=Se, C=NR ＢＮＥ６ｂ , P(=O)(R ＢＮＥ６ｂ ), SO, SO ２ , N.R. ＢＮＥ６ｂ , O, S or CONR ＢＮＥ６ｂ is replaced by C ２ -C ４０ Alkenyl, This may optionally be one or more substituents R ＢＮＥ６ｂ is replaced by Here, one or more non-adjacent CH ２ The group is optionally R ＢＮＥ６ｂ C=CR ＢＮＥ６ｂ , C≡C, Si(R ＢＮＥ６ｂ ) ２ , Ge(R ＢＮＥ６ｂ ) ２ , Sn(R ＢＮＥ６ｂ ) ２ , C=O, C=S, C=Se, C=NR ＢＮＥ６ｂ , P(=O)(R ＢＮＥ６ｂ ), SO, SO ２ , N.R. ＢＮＥ６ｂ , O, S or CONR ＢＮＥ６ｂ is replaced by C ２ -C ４０ Alkynyl, This may optionally be one or more substituents R ＢＮＥ６ｂ is replaced by Here, one or more non-adjacent CH ２ The group is optionally R ＢＮＥ６ｂ C=CR ＢＮＥ６ｂ , C≡C, Si(R ＢＮＥ６ｂ ) ２ , Ge(R ＢＮＥ６ｂ ) ２ , Sn(R ＢＮＥ６ｂ ) ２ , C=O, C=S, C=Se, C=NR ＢＮＥ６ｂ , P(=O)(R ＢＮＥ６ｂ ), SO, SO ２ , N.R. ＢＮＥ６ｂ , O, S or CONR ＢＮＥ６ｂ is replaced by Optionally, one or more substituents R ＢＮＥ６ｂ C substituted with ６ -C ６０ Aryl, Optionally, one or more substituents R ＢＮＥ６ｂ C substituted with ２ -C ５７ Heteroaryl, and A single bond or linking group connecting the two chemical structures of formula BNE-2 together; R ＢＮＥ６ｂ are, in each occurrence, independently selected from the group consisting of: Hydrogen, deuterium, OPh (Ph = phenyl), CF ３ ,C.N.,F. C １ -C ５ Alkyl, wherein optionally one or more hydrogen atoms are independently selected from deuterium, CN, CF ３ or is substituted by F, C １ -C ５ Alkoxy, wherein optionally one or more hydrogen atoms are independently selected from deuterium, CN, CF ３ or is substituted by F, C １ -C ５ Thioalkoxy, wherein optionally one or more hydrogen atoms are independently selected from deuterium, CN, CF ３ or is substituted by F, C ２ -C ５ Alkenyl, wherein optionally one or more hydrogen atoms are independently selected from deuterium, CN, CF ３ or is substituted by F, C ２ -C ５ Alkynyl, wherein optionally one or more hydrogen atoms are independently selected from deuterium, CN, CF ３ or is substituted by F, Optionally, one or more C １ -C ５ C substituted with alkyl substituents ６ -C １８ Aryl, Optionally, one or more C １ -C ５ C substituted with alkyl substituents ２ -C １７ Heteroaryl, N (C ６ -C １８ Aryl) ２ , N (C ２ -C １７ Heteroaryl) ２ , N (C ２ -C １７ Heteroaryl) (C ６ -C １８ aryl), and A single bond or linking group connecting the two chemical structures of formula BNE-2 together; where the optional substituent R ａｂ , R ＢＮＥ５ｂ and R ＢＮＥ６ｂ is independently one or more other substituents R ａｂ , R ＢＮＥ５ｂ and / or R ＢＮＥ６ｂ Together with the can form mono- or polycyclic, aliphatic, aromatic, heteroaromatic and / or benzo-fused ring systems.

2. Each of the thermally activated delayed fluorescent (TADF) materials E Ｂ is an energy E smaller than -2.6 eV ＬＵＭＯ (E Ｂ ) with the lowest unoccupied orbital LUMO (E Ｂ 2. The organic electroluminescence device according to claim 1 ,

3. Each of the TADF materials E Ｂ teeth, (i) The lowest excited singlet state energy E(S Ｅ ) and the lowest excited triplet state energy E(T1 Ｅ ) corresponds to the energy difference ΔE ＳＴ value is less than 0.4 eV; and 3. The organic electroluminescence device according to claim 1, wherein the organic electroluminescence device exhibits a photoluminescence quantum yield (PLQY) of more than 30%.

4. Each H Ｂ p-host H Ｐ 4. The organic electroluminescent device according to claim 1 , comprising or consisting of: -Chemical formula H Ｐ -I, H Ｐ -II, H Ｐ -III, H Ｐ -IV, H Ｐ -V, H Ｐ -VI, H Ｐ -VII, H Ｐ - VIII, H Ｐ -IX and H Ｐ a first chemical moiety that comprises or consists of a structure according to any one of the following: H Ｐ I Ｐ IHH Ｐ _______________________ Ｐ .| H Ｐ -VH Ｐ -VII H Ｐ -VII H Ｐ .IIHH Ｐ ︨ ︨ Ｐ ︹ -Chemical formula H Ｐ -XI, H Ｐ -XII, H Ｐ -XIII, H Ｐ -XIV, H Ｐ -XV, H Ｐ -XVI, H Ｐ -XVII, H Ｐ -XVIII and H Ｐ -XIX, H Ｐ ︹︩H Ｐ ︁.IH Ｐ ︁︩| H Ｐ -XIV H Ｐ -XV H Ｐ -XVI H Ｐ ︁!IHH Ｐ ︁!IIHH Ｐ ︹️︸ Here, the p-host material H Ｐ is linked to a first chemical moiety via a single bond represented by a dashed line in said formula, wherein: Z １ are, in each case independently of one another, a direct bond, C(R ＩＩ ) ２ , C=C(R ＩＩ ) ２ , C=O, C=NR ＩＩ , N.R. ＩＩ , O, Si(R ＩＩ ) ２ , S, S(O) and S(O) ２ is selected from the group consisting of R Ｉ are, in each occurrence, independently of each other, a single bond attachment site linking the first chemical moiety to the second chemical moiety or are selected from the group consisting of: Hydrogen, deuterium, Me, ｉ P.R. ｔ Bu, and Me, ｉ P.R. ｔ Ph optionally substituted with one or more substituents independently selected from the group consisting of Bu and Ph; Here, at least one R Ｉ is a single bond attachment site linking the first chemical moiety to the second chemical moiety; R ＩＩ are, in each occurrence, independently selected from the group consisting of: Hydrogen, deuterium, Me, ｉ P.R. ｔ Bu, and Me, ｉ P.R. ｔ Ph optionally substituted with one or more substituents independently selected from the group consisting of Bu and Ph; where two or more adjacent substituents R ＩＩ selectively forms an aliphatic or aromatic, carbocyclic or heterocyclic ring system and has the chemical formula H Ｐ -XI, H Ｐ -XII, H Ｐ -XIII, H Ｐ -XIV, H Ｐ -XV, H Ｐ -XVI, H Ｐ -XVII, H Ｐ -XVIII and H Ｐ -XIX, and adjacent substituents R ＩＩ The fused ring system, consisting of the additional ring optionally formed by, contains a total of 3 to 60 carbon atoms.

5. Each phosphorescent material P Ｂ is the chemical formula P Ｂ The organic electroluminescent device according to any one of claims 1 to 4, which comprises or consists of a structure according to -I: [Chemical formula P Ｂ -I] wherein M is selected from the group consisting of Ir, Pt, Au, Eu, Ru, Re, Ag and Cu; n is an integer from 1 to 3; X ２ and Y １ together in each case, independently of one another, form a bidentate monoanionic ligand.

6. Each phosphorescent material P Ｂ The organic electroluminescence device according to claim 1 , wherein the first metal oxide layer comprises iridium.

7. Each small FWHM emitter S Ｂ The organic electroluminescence device according to any one of claims 1 to 6, wherein the compound is represented by the chemical formula BNE-6 or BNE-7: [Chemical formula BNE-6] [Chemical formula BNE-7]

8. Each small FWHM emitter S Ｂ The organic electroluminescence device according to any one of claims 1 to 7, wherein the compound is represented by the chemical formula BNE-8: [Chemical formula BNE-8] Here, R ａｃ is selected from the group consisting of: hydrogen, Deuterium (D), Me, ｉ Pr、 ｔ This, C.N., CF ３ 、 Me, ｉ P.R. ｔ Bu, C.N., C.F. ３ and Ph, optionally substituted with one or more substituents independently selected from the group consisting of Me, ｉ P.R. ｔ Bu, C.N., C.F. ３ pyridinyl optionally substituted with one or more substituents independently selected from the group consisting of: Me, ｉ P.R. ｔ Bu, C.N., C.F. ３ and Ph, Me, ｉ P.R. ｔ Bu, C.N., C.F. ３ and Ph; Me, ｉ P.R. ｔ Bu, C.N., C.F. ３ and Ph, N(Ph) ２ 。

9. Each small FWHM emitter S Ｂ The organic electroluminescence device according to any one of claims 1 to 8, wherein the compound is represented by the chemical formula BNE-9: [Chemical formula BNE-9] Here, R ａｃ is selected from the group consisting of: hydrogen, Deuterium (D), Me, ｉ Pr、 ｔ This, C.N., CF ３ 、 Me, ｉ P.R. ｔ Bu, C.N., C.F. ３ and Ph, optionally substituted with one or more substituents independently selected from the group consisting of Me, ｉ P.R. ｔ Bu, C.N., C.F. ３ pyridinyl optionally substituted with one or more substituents independently selected from the group consisting of: Me, ｉ P.R. ｔ Bu, C.N., C.F. ３ and Ph, Me, ｉ P.R. ｔ Bu, C.N., C.F. ３ and Ph; Me, ｉ P.R. ｔ Bu, C.N., C.F. ３ and Ph, N(Ph) ２ 。

10. (ii) Energy E λｍａｘ (P Ｂ ) with a maximum emission λ ｍａｘ (P Ｂ At least one phosphorescent material P Ｂ , and (iii) Energy E λｍａｘ (S Ｂ ) with a maximum emission λ ｍａｘ (S Ｂ At least one small full width at half maximum (FWHM) emitter S Ｂ , where S Ｂ emits light having a full width at half maximum (FWHM) of 0.25 eV or less; (iv) Energy E λｍａｘ (E Ｂ ) with a maximum emission λ ｍａｘ (E Ｂ At least one thermally activated delayed fluorescent (TADF) material E Ｂ 10. An organic electroluminescent device according to claim 1 , wherein the formulas (18) and (19) apply: |E λｍａｘ (P Ｂ )-E λｍａｘ (S Ｂ )|<0.20eV (18) |E λｍａｘ (E Ｂ )-E λｍａｘ (S Ｂ )|<0.20eV (19)。

11. 11. The organic electroluminescence device according to claim 1 , wherein at least one of the relationships represented by the following formulas (23) to (25) is applied: 440nm<λ ｍａｘ (S) Ｂ )<470nm (23) 510nm<λ ｍａｘ (S) Ｂ )<550nm (24) 610nm<λ ｍａｘ (S) Ｂ )<665nm (25).

12. 12. The organic electroluminescent device according to claim 1 , wherein the light-emitting layer B comprises or consists of: (i) 30 to 99.7% by weight of one or more host materials H Ｂ , (ii) 0.1 to 30% by weight of one or more phosphorescent materials P Ｂ , (iii) 0.1 to 10 wt. % of one or more small FWHM emitters S Ｂ , and optionally (iv) 0.1 to 69.8 wt. % of one or more TADF materials E Ｂ , and optionally (v) 0 to 69.8 wt. % of one or more solvents.

13. 1. A method of producing light, comprising the steps of: (i) providing an organic electroluminescent device according to any one of claims 1 to 12, and (ii) applying a current to the organic electroluminescent device;

14. 14. The method of claim 13, wherein the method generates light in a wavelength range selected from one of the following wavelength ranges: (i) 510 nm to 550 nm, or (ii) 440 nm to 470 nm, or (iii) 610 nm to 665 nm.

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