Semiconductive compound composition and method for producing same

Abstract

The present invention relates to a semiconductive compound composition and a method for producing the same, specifically to a semiconductive compound composition containing a base resin in which two types of ethylene butyl acrylate resins having different melt indices are mixed, and carbon black, in which the volume of the carbon black is 60 vol% or more relative to the total volume of the semiconductive compound composition, and a method for producing the same.

Description

[Technical field]

[0001] The present invention relates to a semiconductive compound composition and a method for producing the same, and more particularly to a semiconductive compound composition for high voltage power cables, which has excellent processability and low volume resistivity even at high temperatures, and a method for producing the same. [Background technology]

[0002] In general, a power cable is composed of a conductor portion made of a metal such as aluminum or copper, which is coated with an inner semiconductive layer that encases the conductor, and then coated with an insulating layer, and then an armor layer disposed on the outer surface of the outer semiconductive layer to protect the outer semiconductive layer and the cable itself, and the structure may be changed as necessary.

[0003] The purpose of using the semiconducting layer is to make the local electric field radially uniform, since a high voltage can be applied to the insulating layer due to electric field distortion that can occur between the conductor and the neutral wire, and to prevent insulation breakdown and shortening of the life of the power cable due to deterioration of the insulating layer.

[0004] The semiconductive layer is produced by mixing a sufficient amount of carbon black to make the layer semiconductive when forming the power cable, and a common crosslinking agent for ethylene resins such as ethylene vinyl acetate resin (EVA) and ethylene butyl acrylate (EBA) to fully perform its original function.

[0005] The volume resistivity of the semiconductive layer increases as the temperature increases, which means that at high temperatures the conductive network of the semiconductive material is destroyed, thereby restricting the flow of electrons and causing an increase in the volume resistivity.

[0006] In order to minimize the volume resistivity, the content of a conductive material such as carbon black can be increased, but this may result in a decrease in processability or mechanical strength.

[0007] In order to improve the processability, different types of polymer resins may be mixed or a crosslinking agent may be added, but this may result in reduced miscibility or increased volume resistivity.

[0008] Therefore, in this technical field, there is an urgent need for the development of a semiconductive compound composition for forming a semiconductive layer having excellent processability and mechanical strength, and low volume resistivity even at high temperatures. Summary of the Invention [Problem to be solved by the invention]

[0009] An object of the present invention is to provide a semiconductive compound composition which has low volume resistivity even at high temperatures and is also excellent in processing stability.

[0010] Another object of the present invention is to provide a semiconductive compound composition that has excellent oxidation stability even at high temperatures. [Means for solving the problem]

[0011] The present invention provides a semiconductive compound composition comprising a base resin in which two types of ethylene butyl acrylate resins having different melt indices are mixed, and carbon black, The content of the carbon black satisfies the following formula 1, thereby providing a semiconductive compound composition. [Formula 1] JPEG2025515069000001.jpg19170 (M1: weight of carbon black, M2: weight of base resin, d1: specific gravity of carbon black, d2: specific gravity of base resin)

[0012] According to one embodiment of the present invention, the melt index can satisfy the following formulas 2 to 3. [Formula 2] JPEG2025515069000002.jpg11170[Formula 3] JPEG2025515069000003.jpg11170 (The MI1 is the melt index of the first ethylene butyl acrylate resin, and the MI2 is the melt index of the second ethylene butyl acrylate resin, and the melt index is measured at 125° C. and 2.16 kg in accordance with the measurement method of ASTM D1238, and the melt index unit is g / 10 min.)

[0013] According to one aspect of the present invention, in the base resin, the first ethylene butyl acrylate resin may have an Ml1 of 5 to 10 g / 10 min, and the second ethylene butyl acrylate resin may have an Ml2 of 15 to 25 g / 10 min.

[0014] According to one embodiment of the present invention, the Ml1 value and the Ml2 value of the base resin may satisfy the following formula 4. [Formula 4] JPEG2025515069000004.jpg11170 (The MI1 is a melt index (g / 10 min) of the first ethylene butyl acrylate resin measured at 125° C. and 2.16 kg in accordance with the measurement method of ASTM D1238, and the MI2 is a melt index (g / 10 min) of the second ethylene butyl acrylate resin measured by the same measurement method as above.)

[0015] According to one aspect of the present invention, in the base resin, the first ethylene butyl acrylate resin is an ethylene butyl acrylate resin having a content of a structural unit derived from a butyl acrylate monomer of 15 to 18 mol% and an Ml1 of 5 to 10 g / 10 min; The second ethylene butyl acrylate resin may be an ethylene butyl acrylate resin having a content of structural units derived from a butyl acrylate monomer of 19 to 22 mol % and an Ml2 of 17 to 22 g / 10 min.

[0016] According to one embodiment of the present invention, the composition may contain 30 to 100 parts by weight of carbon black based on 100 parts by weight of the base resin.

[0017] According to one aspect of the present invention, the semiconductive compound composition may further include an antioxidant and a crosslinking agent.

[0018] According to one embodiment of the present invention, the composition may contain 30 to 100 parts by weight of carbon black, 0.01 to 5 parts by weight of an antioxidant, and 0.1 to 10 parts by weight of a crosslinking agent, based on 100 parts by weight of the base resin.

[0019] According to one aspect of the present invention, the semiconductive compound composition may further include a metal stearate.

[0020] According to one aspect of the present invention, the metal stearate may include one or a combination of two or more selected from the group consisting of zinc stearate, calcium stearate, aluminum stearate, and magnesium stearate.

[0021] According to one aspect of the present invention, there is provided a semiconductive cured resin product obtained by crosslinking the above-mentioned semiconductive compound composition.

[0022] According to one aspect of the present invention, the semiconductive resin cured product may have a volume resistivity of 330 Ω·cm or less at 135° C. according to ASTM D991.

[0023] The present invention can provide a method for producing a cured semiconductive resin material, the method including the steps of: a) feeding the base resin, carbon black, and an antioxidant into a first kneader, followed by kneading and pulverizing to produce master batch particles; b) mixing the master batch particles with a crosslinker, and impregnating the master batch particles with the crosslinker to produce a semiconductive compound composition; and c) homogenizing the semiconductive compound composition to provide a cured semiconductive resin material, wherein the content of the carbon black in the semiconductive compound composition satisfies the following formula 1: [Formula 1] JPEG2025515069000005.jpg19170 (M1: weight of carbon black, M2: weight of base resin, d1: specific gravity of carbon black, d2: specific gravity of base resin)

[0024] According to one embodiment of the present invention, the composition may contain 30 to 100 parts by weight of carbon black, 0.01 to 5 parts by weight of an antioxidant, and 0.1 to 10 parts by weight of a crosslinking agent, based on 100 parts by weight of the base resin. Effect of the Invention

[0025] The semiconductive resin cured product produced from the semiconductive compound composition of the present invention has a volume resistivity of 200 Ω or less, 180 Ω or less, 160 Ω or less, and preferably 150 Ω or less, even at high temperatures, for example 90°C, and has a long scorch time, and therefore has excellent processability and surface smoothness.

[0026] Furthermore, the cured semiconductive compound of the present invention has excellent oxidation stability even at high temperatures, and therefore has the advantage of being excellent in durability even when used for a long period of time and capable of maintaining low volume resistivity. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0027] The present invention will be described in more detail with reference to specific examples or examples below. However, the following specific examples or examples are merely references for describing the present invention in detail, and the present invention is not limited thereto, and may be realized in various forms.

[0028] Furthermore, unless otherwise defined, all technical and scientific terms have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure pertains. The terms used in the description of this disclosure are merely for the purpose of effectively describing specific embodiments and are not intended to limit the disclosure.

[0029] Also, as used in the specification and the appended claims, the singular forms "a," "an," and "the" can be intended to include the plural forms as well, unless the context clearly indicates otherwise.

[0030] In addition, when a part is described as "comprising" a certain component, this does not mean excluding other components, but may further include other components, unless specifically stated to the contrary.

[0031] Semiconductive layers included in high voltage cables are required to have low volume resistance and excellent processability. The semiconductive layers are manufactured by mixing polymer resins and conductive materials. The properties of the semiconductive compound composition change depending on the content of the conductive material, and therefore it is necessary to control the optimal content.

[0032] The present invention provides a semiconductive compound composition comprising a base resin in which two types of ethylene butyl acrylate resins having different melt indices are mixed, and carbon black, The above problem is solved by including carbon black in an amount of 60 vol % or more relative to the total volume of the semiconductive compound composition.

[0033] Specifically, a semiconductive compound composition in which carbon black is mixed with a base resin in which two types of ethylene butyl acrylate resins having different melt indexes are mixed has excellent processability and low volume resistivity. In particular, when the volume of carbon black is 60 vol% or more, for example, 61 vol% to 70 vol%, relative to the total volume of the semiconductive compound composition, it can have lower volume resistivity and excellent processability even at high temperatures, and has the advantage of having excellent physical properties even when the contents of crosslinker and antioxidant are reduced.

[0034] Specifically, the present invention relates to a semiconductive compound composition comprising a base resin in which two types of ethylene butyl acrylate resins having different melt indices are mixed, and carbon black, The content of the carbon black satisfies the following formula 1, thereby providing a semiconductive compound composition.

[0035] [Formula 1] JPEG2025515069000006.jpg19170

[0036] (M1: weight of carbon black, M2: weight of base resin, d1: specific gravity of carbon black, d2: specific gravity of base resin)

[0037] As shown in the formula 1, the volume of the carbon black may be 60 vol% or more, specifically, the volume of the carbon black may be 61 to 70 vol%, specifically, 62 to 68 vol%, but is not limited thereto, relative to the total composition volume of the semiconductive compound. By satisfying the content of the carbon black in the semiconductive compound composition, it is possible to have lower volume resistivity and excellent processability even at high temperatures, and there is an advantage in that the physical properties are excellent even when the contents of the crosslinker and antioxidant are reduced.

[0038] According to one aspect of the present invention, the semiconductive compound composition may include, but is not limited to, 30 to 100 parts by weight of carbon black per 100 parts by weight of the base resin, specifically, 40 to 90 parts by weight of carbon black per 100 parts by weight of the base resin, more specifically, 55 to 70 parts by weight of carbon black per 100 parts by weight of the base resin, and specifically, 55 to 60 parts by weight of carbon black per 100 parts by weight of the base resin.

[0039] According to one embodiment of the present invention, the melt indices of the two types of ethylene butyl acrylate resins having different melt indices can satisfy the following formulas 2 to 3.

[0040] [Formula 2] JPEG2025515069000007.jpg11170

[0041] [Formula 3] JPEG2025515069000008.jpg11170

[0042] The MI1 is the melt index of the first ethylene butyl acrylate resin, and the MI2 is the melt index of the second ethylene butyl acrylate resin. The melt indexes are measured at 125°C and 2.16 kg in accordance with the measurement method of ASTM D1238, and the melt index units are g / 10 min.

[0043] By mixing the first ethylene butyl acrylate resin having a melt index value in the range of Ml1 and the second ethylene butyl acrylate having a melt index value in the range of Ml2 to form the base resin contained in the semiconductive compound composition, the semiconductive compound composition has the advantage of exhibiting improved processability and excellent miscibility between the compositions. In addition, the inventors have found that the semiconductive compound composition containing the base resin has a lower volume resistivity than a resin containing one type of ethylene butyl acrylate or a resin containing two different polymer resins.

[0044] Furthermore, the present inventors have recognized for the first time that by adopting a base resin containing a first ethylene butyl acrylate resin and a second ethylene butyl acrylate resin that satisfy the above formulas 2 to 3, it is possible to reduce the volume resistivity without deteriorating the inherent processability and mechanical properties of the semiconductive compound composition, and have thus completed the present invention.

[0045] According to one embodiment of the present invention, the base resin preferably has an Ml1 value of 5 to 10 g / 10 min and an Ml2 value of 15 to 25 g / 10 min, since the volume resistivity can be further reduced.

[0046] According to one embodiment of the present invention, the Ml1 value and the Ml2 value of the base resin preferably satisfy the following formula 4, so that the volume resistivity at high temperatures can be further reduced.

[0047] [Formula 4] JPEG2025515069000009.jpg11170

[0048] In one aspect of the present invention, the first ethylene butyl acrylate resin of the base resin may be an ethylene butyl acrylate resin having a content of structural units derived from a butyl acrylate monomer of 15 to 18 mol% and a melt index of 5 to 10 g / 10 min, and the second ethylene butyl acrylate resin may be an ethylene butyl acrylate resin having a content of structural units derived from a butyl acrylate monomer of 19 to 22 mol% and a melt index of 17 to 22 g / 10 min. When a base resin containing the above resins is used, it is more preferable that a semiconductive compound composition having a lower volume resistance at high temperatures is provided.

[0049] According to one aspect of the present invention, the semiconductive compound composition may further include an antioxidant and a crosslinking agent.

[0050] The semiconductive compound composition contains an antioxidant, which allows the semiconductive compound composition to maintain excellent volume resistivity, processability and mechanical strength at high temperatures, and also prevents deterioration of the semiconductive compound composition for a long period of time after processing.

[0051] According to an embodiment of the present invention, the antioxidant may be at least one selected from the group consisting of phenol-based compounds and thioether-based compounds.

[0052] Specifically, the phenolic compound is 2,2'-thiodiethylene-bis-(3,5-di-t-butyl-4-hydroxyphenyl)propionate, 4,4'-thio-bis-(2-t-butyl-5-methylphenol), 1,2-dihydro-2,2,4-trimethylquinoline, diethyl((3,5-bis-(1,1-dimethylethyl)-4-hydroxyphenyl)methyl)phosphonate, 1,3,4-tris(4-tert-butyl-3-hydroxy-2,6-dimethylbenzene)-1,3,5-triazine-2,4,6-(1H,3H,5 The tertiary amine may include, but is not limited to, one or a combination of two or more selected from the group consisting of N,N'-bis-(3-(3',5'-di-t-butyl-4'-hydroxyphenyl)propionate, N,N'-trione, tetrakis[methylene-3-(3,5-di-tert-butyl-4-hydroxypentyl)propionate]methane, octadecyl-3-(3,5-di-tert-butyl-4-hydroxyphenyl)propionate, tris(2,4-di-tert-butylphenyl)phosphite, and N,N'-bis-(3-(3',5'-di-t-butyl-4'-hydroxyphenyl)propionyl)hydrazine.

[0053] In addition, the thioether compound may include, but is not limited to, one or a combination of two or more selected from the group consisting of dilauryl thiodipropionate, ditridecyl thiodipropionate, dimyristyl thiodipropionate, dioctadecyl disulfide, bis[2-methyl-4-(3-n-dodecylthiopropionyloxy)-5-tert-butylphenyl]sulfide, pentaerythritol-tetrakis-(3-laurylthiopropionate), 1,4-cyclohexanedimethanol, 3,3'-thiobispropanoic acid dimethyl ester polymer, and distearyl thiodipropionate.

[0054] By using the antioxidant, the semiconductive resin composition can be processed to not only increase the processability of the polymer, but also prevent the polymer from being oxidized.

[0055] The semiconductive compound composition contains a crosslinking agent, and a crosslinked semiconductive layer can be formed by press molding, injection, or extrusion of the composition containing the crosslinking agent at a high temperature, for example, at a high temperature of 180° C. or more, 200° C. or more. The method for impregnating and homogenizing the crosslinking agent is not particularly limited, and for example, the master batch and the crosslinking agent can be mixed, and the mixture can be homogenized by heating and aging.

[0056] Suitable crosslinking agents that can be used include, for example, (di(tert-butylperoxyisopropyl)benzene, 1,1-(tert-butylperoxy)-3,3,5-trimethylcyclohexane, n-butyl-4,4-(bis-butylperoxy)valerate, dicumyl peroxide, perbutyl peroxide, 1,1-bis(tert-butylperoxy)-diisopropylbenzene, benzoyl peroxide, 2,5-dimethyl-2,5-di-tert-butylperoxyhexane, tert-butylperoxybenzoyl peroxide ... Specifically, the peroxide may include one or a combination of two or more selected from the group consisting of perbutyl peroxide, 1,1-(tertiarybutylperoxy)-3,3,5-trimethylcyclohexane, benzoyl peroxide, and dicumyl peroxide, and more specifically, the peroxide may include, but is not limited to, dicumyl peroxide and perbutyl peroxide.

[0057] According to one embodiment of the present invention, the semiconductive compound composition may contain, relative to 100 parts by weight of the base resin, 30 to 100 parts by weight of carbon black, 0.01 to 5 parts by weight of an antioxidant, and 0.1 to 10 parts by weight of a crosslinking agent. Specifically, relative to 100 parts by weight of the base resin, 40 to 90 parts by weight of carbon black, 0.1 to 3 parts by weight of an antioxidant, and 0.3 to 5 parts by weight of a crosslinking agent. More specifically, relative to 100 parts by weight of the base resin, 55 to 70 parts by weight of carbon black, 0.2 to 1 part by weight of an antioxidant, and 0.5 to 3 parts by weight of a crosslinking agent. The semiconductive compound composition is not limited thereto.

[0058] When the content of the semiconductive composition satisfies the above range, the crosslinking time and the crosslinking degree can be appropriately set, and thus it is possible to provide a semiconductive composition that not only has excellent processability and mechanical strength, but also does not deteriorate even when used for a long period of time and has excellent volume resistance.

[0059] According to one aspect of the present invention, the semiconductive composition may include a metal stearate-based compound, specifically, one or a combination of two or more selected from the group consisting of zinc stearate, calcium stearate, aluminum stearate, and magnesium stearate, specifically, calcium stearate and / or zinc stearate, more specifically, zinc stearate, but is not limited thereto.

[0060] By further including the metal stearate, it is possible to minimize the sloughing phenomenon of polymers. The semiconductive layer according to an embodiment of the present invention manufactured with the metal stearate content can have excellent surface properties without generating protrusions on the surface. In addition, by further including the metal stearate, it is possible to improve the fluidity of the semiconductive resin composition and minimize deviation in electrical conductivity due to stretching when molding the semiconductive resin composition.

[0061] According to one aspect of the present invention, the semiconductive resin composition may further include a processing aid, which may include one or a combination of two or more selected from the group consisting of montan wax, fatty acid ester, triglyceroid or partial ester thereof, glycerin ester, polyethylene wax, paraffin wax, metal soap-based lubricant, amide-based lubricant, etc., and may specifically include, but is not limited to, fatty acid ester, triglyceroid or partial ester thereof, and polyethylene wax.

[0062] By further including the processing aid, it is possible to improve the releasability between the semiconductive resin composition and the conductor, and to reduce the extrusion load. By crosslinking the semiconductive resin composition according to one embodiment of the present invention, a semiconductive resin cured product can be produced. The crosslinked semiconductive resin cured product has excellent processability and mechanical strength, and also has excellent volume resistivity even at high temperatures, making it suitable for use in the semiconductive layer of an extra-high voltage cable wire.

[0063] The mechanical properties and volume resistance of the cured semiconductive resin vary depending on the degree of crosslinking, and the degree of crosslinking is determined by the crosslinking density.

[0064] According to one embodiment of the present invention, the semiconductive resin cured product may have a volume resistivity at 90° C. according to ASTM D991 of 300 Ω cm or less, specifically 160 Ω cm or less, and more specifically 150 Ω cm or less, but is not limited thereto.

[0065] Furthermore, the volume resistivity of the semiconductive resin cured product in accordance with ASTM D991 at 110°C may be 340 Ω cm or less, specifically 300 Ω cm or less, and more specifically 250 Ω cm or less, but is not limited thereto.

[0066] Furthermore, the volume resistivity of the semiconductive resin cured product according to ASTM D991 at 135°C may be 330 Ω cm or less, specifically 300 Ω cm or less, and more specifically 250 Ω cm or less, but is not limited thereto.

[0067] Furthermore, the semiconductive resin cured product may have an elongation in accordance with ATSM D 638 of 180% or more, specifically 180% to 200%, and more specifically 185% to 195%, but is not limited thereto.

[0068] The semiconductive resin cured product has a tensile strength of 220 kgf / cm according to ATSM D 638. 2 More specifically, the tensile strength is 230 to 300 kgf / cm 2 More specifically, it may be 230 to 270 kgf / cm 2 It may be, but is not limited to this.

[0069] According to one aspect of the present invention, there is provided a method for producing a cured semiconductive resin material, the method including the steps of: a) feeding the base resin, carbon black, and an antioxidant into a first kneader, followed by kneading and pulverizing to produce master batch particles; b) mixing the master batch particles with a crosslinker, and impregnating the master batch particles with the crosslinker to produce a semiconductive compound composition; and c) homogenizing the semiconductive compound composition to provide a cured semiconductive resin material, wherein the content of the carbon black in the semiconductive compound composition satisfies the following formula 1:

[0070] [Formula 1] JPEG2025515069000010.jpg19170

[0071] (M1: weight of carbon black, M2: weight of base resin, d1: specific gravity of carbon black, d2: specific gravity of base resin)

[0072] The temperature of the first kneader in step a) may be 90 to 120° C., but is not limited thereto, as long as it is a commonly used temperature. The kneader may be a Banbury mixer (Dispersion type kneader), but is not limited thereto, as long as it is a commonly used device.

[0073] In step a), the composite resin kneaded in the kneader can be prepared in the form of master batch particles, which are easy to process, and the master batch particles can be prepared by passing through a roll mill and a crusher, but is not limited thereto as long as it is a commonly used device.

[0074] The size of the master batch particles may be 2 to 10 mm, specifically 3 to 8 mm, but is not limited thereto.

[0075] The step b) may include a step of mixing the master batch particles and a crosslinking agent, and the mixing method may be, but is not limited to, a Brabender mixer. The mixing conditions may be, but are not limited to, a temperature of 60 to 80° C. and a stirring speed of 30 to 60 rpm. By mixing the master batch particles and the crosslinking agent, a semiconductive resin composition in which the crosslinking agent is impregnated in the master batch particles can be prepared.

[0076] The semiconductive resin composition prepared in step c) may be homogenized, specifically, in an oven. The homogenization means that the crosslinking agent is infiltrated into the inside of the particles to homogenize the composition and prevent deviation in physical properties due to press molding.

[0077] The oven temperature may be equal to or higher than the curing temperature of the curing agent, specifically, 60 to 100° C., and the crosslinking and aging time may be, but is not limited to, 10 minutes to 12 hours.

[0078] In addition, according to one embodiment of the present invention, the crosslinking time in step c) is preferably 10 minutes or more, specifically, 12 minutes or more, but is not limited thereto. If the crosslinking time is too short, the processing stability of the semiconductive cured material may decrease during processing of the cable.

[0079] The present invention will be described in more detail with reference to the following examples and comparative examples. However, the following examples and comparative examples are merely illustrative examples for explaining the present invention in more detail, and the present invention is not limited by the following examples and comparative examples.

[0080] [Tensile strength and elongation] The tensile strength and elongation were measured in accordance with ATSM D 638 at 250 mm / min.

[0081] [Scorch Time] Scorch time was measured according to ASTM D 6204.

[0082] [Volume resistivity] The volume resistivity was measured according to ASTM D991.

[0083] [Melt Index] The melt index is measured at 125° C. and 2.16 kg in accordance with the method of ASTM D1238, and the melt index unit is g / 10 min.

[0084] [Example 1] 100 parts by weight of a base resin having the same weight ratio of a first ethylene butyl acrylate resin having a butyl acrylate content of 17 mol%, a density of 0.924 g / ml, and a melt index of 7.0 g / 10 min and a second ethylene butyl acrylate resin having a butyl acrylate content of 20 mol%, a density of 0.925 g / ml, and a melt index of 20.0 g / 10 min was mixed with 0.635 parts by weight of 1,2-dihydro-2,2,4-trimethylquinoline (Naugard SuperQ, Bigen Shoji) and 56.5 parts by weight of carbon black (420B, bulk density: 0.308 g / ml), kneaded with a roll mill at 100°C for 30 minutes, and crushed into particles of 2 to 4 mm size by passing through a crusher. The ground particles and the crosslinking agent were then put into a Brabender Mixer, and the particles were impregnated with the crosslinking agent and aged to produce a semiconductive compound in which the crosslinking agent had been impregnated into the particles. 1.25 parts by weight of di[tert-butylperoxyisopropyl]benzene, a crosslinking agent, was added to 100 parts by weight of the base resin in the Brabender Mixer, and the mixture was mixed at 40 rpm at 75°C for 10 minutes to be impregnated, and then aged in an oven at 70°C for 8 hours to produce semiconductive compound composition particles in which the crosslinking agent had been uniformly impregnated.

[0085] The semiconductive compound particles were press molded at 180° C. and 200 bar to prepare test pieces for measuring physical properties. The tensile strength, elongation and scorch time were measured and are shown in Table 1, and the volume resistivity was measured and is shown in Table 2.

[0086] [Example 2] The same procedure was carried out as in Example 1, except that 55.36 parts by weight of carbon black (2700G, bulk density: 0.299 g / ml) was used instead of carbon black (420B, bulk density: 0.308 g / ml), 0.63 parts by weight of 1,2-dihydro-2,2,4-trimethylquinoline (Naugard SuperQ, Bigen Shoji), and 1.24 parts by weight of a crosslinking agent (Di[tert-butylperoxyisopropyl]benzene, Perkadox14s-FL, AkzoNobel) were used.

[0087] The tensile strength, elongation and scorch time of the prepared semiconductive compound composition were measured and are shown in Table 1, and the volume resistivity was measured and is shown in Table 2.

[0088] [Example 3] The same procedure was carried out as in Example 1, except that 55.85 parts by weight of carbon black (XC500, bulk density: 0.314 g / ml) was used instead of carbon black (420B, bulk density: 0.308 g / ml), 0.63 parts by weight of 1,2-dihydro-2,2,4-trimethylquinoline (Naugard SuperQ, Bigen Shoji), and 2.49 parts by weight of a crosslinking agent (Di[tert-butylperoxyisopropyl]benzene, Perkadox14s-FL, AkzoNobel) were used.

[0089] The tensile strength, elongation and scorch time of the prepared semiconductive compound composition were measured and are shown in Table 1, and the volume resistivity was measured and is shown in Table 2.

[0090] [Comparative Example 1] The same procedure was carried out as in Example 3, except that 55.85 parts by weight of carbon black (XC500, bulk density: 0.347 g / ml) was used instead of carbon black (XC500, bulk density: 0.314 g / ml). The tensile strength, elongation, and scorch time of the prepared semiconductive compound composition were measured and are listed in Table 1, and the volume resistivity was measured and is listed in Table 2.

[0091] [Comparative Example 2] The same procedure was carried out as in Example 1, except that instead of a mixed base resin having the same weight ratio of a first ethylene butyl acrylate resin having a butyl acrylate content of 17 mol%, a density of 0.924 g / ml and a melt index of 7.0 g / 10 min and a second ethylene butyl acrylate resin having a butyl acrylate content of 20 mol%, a density of 0.925 g / ml and a melt index of 20.0 g / 10 min, a first ethylene butyl acrylate resin as a single resin having a butyl acrylate content of 17 mol%, a density of 0.924 g / ml and a melt index of 7.0 g / 10 min was used as a base resin in an amount of 100 parts by weight.

[0092] The tensile strength, elongation and scorch time of the prepared semiconductive compound composition were measured and are shown in Table 1, and the volume resistivity was measured and is shown in Table 2.

[0093] [Table 1] JPEG2025515069000012.jpg76170*The EBA1 is a first ethylene acrylate resin and the EBA2 is a second ethylene acrylate resin.

[0094] [Table 2]

[0095] As described above, the present invention has been described with specific matters and limited examples and drawings, but these are provided to help a more general understanding of the present invention, and the present invention is not limited to the above examples, and a person having ordinary knowledge in the field to which the present invention belongs can make various modifications and variations from such descriptions. Therefore, the idea of ​​the present invention should not be limited to the above examples, and all things equivalent to or equivalent to the scope of the claims, as well as the claims to be described later, are within the scope of the idea of ​​the present invention.

Claims

1. A semiconductive compound composition comprising a base resin in which two types of ethylene butyl acrylate resins having different melt indices are mixed, and carbon black, A semiconductive compound composition, wherein the content of the carbon black satisfies the following formula 1: [Formula 1] (M １ : weight of carbon black, M ２ : weight of base resin, d １ : specific gravity of carbon black, d ２ : specific gravity of base resin)

2. The semiconductive compound composition according to claim 1, wherein the melt index satisfies the following formulas 2 to 3. [Formula 2] [Formula 3] (The above MI １ is the melt index of the first ethylene butyl acrylate resin, ２ is the melt index of the second ethylene butyl acrylate resin, the melt index being measured at 125°C and 2.16 kg in accordance with the measurement method of ASTM D1238, and the melt index unit is g / 10 min.

3. The Ml of the first ethylene butyl acrylate resin １ is 5 to 10 g / 10 min, and the Ml of the second ethylene butyl acrylate resin is ２ The semiconductive compound composition according to claim 2, wherein the weight ratio is 15 to 25 g / 10 m.

4. Ml of the base resin １ Value and Ml ２ The semiconductive compound composition according to claim 2 , wherein the value satisfies the following formula 4: [Formula 4] (The above MI １ is the melt index (g / 10 min) of the first ethylene butyl acrylate resin measured at 125° C. and 2.16 kg in accordance with the measurement method of ASTM D1238, and the MI ２ is the melt index (g / 10 min) of the second ethylene butyl acrylate resin measured by the same measuring method as above.

5. In the base resin, the first ethylene butyl acrylate resin has a content of structural units derived from a butyl acrylate monomer of 15 to 18 mol %, and Ml １ is an ethylene butyl acrylate resin having a viscosity of 5 to 10 g / 10 min; The second ethylene butyl acrylate resin has a content of structural units derived from a butyl acrylate monomer of 19 to 22 mol %. ２ The semiconductive compound composition according to claim 4, wherein the semiconductive compound composition is an ethylene butyl acrylate resin having a viscosity of 17 to 22 g / 10 min.

6. 2. The semiconductive compound composition according to claim 1, comprising 30 to 100 parts by weight of carbon black per 100 parts by weight of the base resin.

7. 10. The semiconductive compound composition of claim 1, further comprising an antioxidant and a crosslinking agent.

8. 8. The semiconductive compound composition according to claim 7, comprising 30 to 100 parts by weight of carbon black, 0.01 to 5 parts by weight of an antioxidant, and 0.1 to 10 parts by weight of a crosslinking agent, based on 100 parts by weight of the base resin.

9. The semiconductive compound composition of claim 8 , further comprising a metal stearate.

10. 10. The semiconductive compound composition according to claim 9, wherein the metal stearate comprises one or a combination of two or more selected from the group consisting of zinc stearate, calcium stearate, aluminum stearate, and magnesium stearate.

11. A semiconductive resin cured product obtained by crosslinking the semiconductive compound composition according to any one of claims 1 to 10.

12. The semiconductive resin cured product according to claim 11, wherein the semiconductive resin cured product has a volume resistivity of 330 Ω·cm or less at 135° C. according to ASTM D991.

13. a) adding a base resin, carbon black, and an antioxidant to a first kneader, and then kneading and pulverizing the mixture to prepare master batch particles; b) mixing the master batch particles with a crosslinking agent, and impregnating the crosslinking agent into the master batch particles to prepare a semiconductive compound composition; c) homogenizing the semiconductive compound composition to obtain a semiconductive resin cured product; The method for producing a cured semiconductive resin product, wherein the content of the carbon black satisfies the following formula 1: [Formula 1] (M １ : weight of carbon black, M ２ : weight of base resin, d １ : specific gravity of carbon black, d ２ : specific gravity of base resin)

14. The method for producing a cured semiconductive resin according to claim 13, comprising, relative to 100 parts by weight of the base resin, 30 to 100 parts by weight of carbon black, 0.01 to 5 parts by weight of an antioxidant, and 0.1 to 10 parts by weight of a crosslinking agent.

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