Transistor and method for manufacturing the same

Abstract

The present invention relates to a transistor and a method for manufacturing the same, and more particularly, to a transistor having improved characteristics and a method for manufacturing the same. A transistor according to an embodiment of the present invention includes a channel layer including at least one of a metal oxide, a metal nitride, and a metal oxynitride, a source and a drain electrode formed on the channel layer, and a first treatment layer formed between the channel layer and the source and drain electrodes.

Description

Technical Field

[0001] The present invention relates to a transistor and a method for manufacturing the same, and more particularly, to a transistor having improved characteristics and a method for manufacturing the same.

Background Art

[0002] A transistor is used as a circuit for independently driving each cell or pixel in a semiconductor device, a liquid crystal display (LCD), an organic electroluminescence (EL) display device, and the like.

[0003] Such a transistor is formed together with a gate line and a data line on a lower substrate of a display device. That is, the transistor includes a gate electrode that is a part of the gate line, a channel layer used as a channel, a source electrode and a drain electrode that are parts of the data line, and a gate insulating film.

[0004] In the manufacturing process of a transistor, the channel layer is exposed to an etching gas for patterning. When the channel layer is exposed to the etching gas, the exposed surface of the channel layer is damaged by the etching gas and loses oxygen. In addition, the channel layer is connected to a source electrode and a drain electrode that are parts of the data line, but when the transistor is driven, oxygen moves from the channel layer to the source electrode and the drain electrode, and as a result, the channel layer loses oxygen. Thus, when oxygen deficiency occurs in the channel layer, the channel layer unintentionally increases its electrical conductivity and becomes conductive. For this reason, there has been a problem that a short circuit of the element occurs and the transistor cannot be stably driven.

Prior Art Documents

Patent Documents

[0005]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0006] The present invention provides a transistor capable of preventing oxygen deficiency in a channel layer and improving stability, and a method for manufacturing the same.

Means for Solving the Problems

[0007] A transistor according to an embodiment of the present invention includes a channel layer containing at least one of metal oxide, metal nitride, and metal oxynitride, a source and a drain electrode formed on the channel layer, and a first treatment layer formed between the channel layer and the source and drain electrodes.

[0008] The first treatment layer may contain at least one of indium (In), gallium (Ga), zinc (Zn), tin (Sn), and nickel (Ni), and at least one element of oxygen (O) and nitrogen (N).

[0009] The first treatment layer may contain at least one element of silver (Ag), platinum (Pt), iridium (Ir), molybdenum (Mo), cobalt (Co), ruthenium (Ru), and titanium (Ti).

[0010] The transistor further includes a second treatment layer formed on the first treatment layer, and the second treatment layer may contain at least one element of silver (Ag), platinum (Pt), iridium (Ir), molybdenum (Mo), cobalt (Co), ruthenium (Ru), and titanium (Ti).

[0011] In addition, the method for manufacturing a transistor according to an embodiment of the present invention includes a step of preparing a substrate on which a channel layer containing at least one of a metal oxide, a metal nitride, and a metal oxynitride is formed and patterning is performed to form source and drain electrodes, and a step of forming a first treatment layer on the channel layer.

[0012] In the step of forming the first treatment layer, the first treatment layer may be formed using at least one of indium (In), gallium (Ga), zinc (Zn), tin (Sn), and nickel (Ni) and at least one element of oxygen (O) and nitrogen (N).

[0013] At least one element of oxygen (O) and nitrogen (N) may be provided from at least one gas of oxygen (O 2 ), nitrogen oxide (N x O y ), nitrogen (N 2 ), and ammonia (NH 3 ).

[0014] In the step of forming the first treatment layer, the first treatment layer may be formed using at least one of silver (Ag), platinum (Pt), iridium (Ir), molybdenum (Mo), cobalt (Co), ruthenium (Ru), and titanium (Ti) and at least one element of oxygen (O), nitrogen (N), hydrogen (H), and argon (Ar).

[0015] The step of forming the first treatment layer may be performed at a temperature of 100°C or higher, or may be performed using plasma.

[0016] The step of forming the first treatment layer may be performed by a selective vapor deposition method or a non-selective vapor deposition method.

[0017] The manufacturing method of the transistor further includes a step of forming a second treatment layer on the first treatment layer. In the step of forming the second treatment layer, the second treatment layer may be formed using at least one of silver (Ag), platinum (Pt), iridium (Ir), molybdenum (Mo), cobalt (Co), ruthenium (Ru), and titanium (Ti), and at least one element of oxygen (O), nitrogen (N), hydrogen (H), and argon (Ar).

[0018] At least one of the elements of nitrogen (N), hydrogen (H), and argon (Ar) is oxygen (O 2 ), nitrogen oxide (N x O y ), nitrogen (N 2 ), hydrogen (H 2 ), and ammonia (NH 3 ), and may be provided from at least one of the gases.

[0019] The step of forming the second treatment layer may be performed at a temperature of 100 °C or higher, or may be performed using plasma.

[0020] The step of forming the second treatment layer may be performed by a selective deposition method or a non-selective deposition method.

Advantages of the Invention

[0021] According to an embodiment of the present invention, by forming a treatment layer for preventing oxygen deficiency in the channel layer between the channel layer and the source and drain electrodes, the channel layer can be prevented from being conductive and the switching characteristics can be improved.

[0022] In addition, the contact resistance between the channel layer and the source and drain electrodes can be effectively reduced, and the characteristics and reliability of the element can be improved.

Brief Description of the Drawings

[0023]

Figure 1

Figure 2

Figure 3

Figure 4

Embodiments for Carrying Out the Invention

[0024] Hereinafter, embodiments of the present invention will be described in more detail with reference to the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below and can be embodied in various different forms. The following embodiments are provided only to make the disclosure of the present invention complete and to fully inform those with ordinary knowledge of the scope of the invention.

[0025] Throughout the specification, when referring to one component such as a film, region, or substrate being "on" another component, it is to be interpreted that the one component may be in direct contact "on" the other component or that there may be still other components intervening between them.

[0026] Also, relative terms and expressions such as "upper" or "lower" can be used in this specification to describe the relative relationship of one element to another as shown in the drawings. It is to be understood that relative terms and expressions are intended to include other directions of the element in addition to the directions depicted in the figure. Here, the drawings may be shown exaggerated for the purpose of explaining the invention in detail, and in the figures, the same reference numerals indicate the same components.

[0027] FIG. 1 is a diagram schematically showing a transistor according to an embodiment of the present invention.

[0028] Referring to FIG. 1, a transistor according to an embodiment of the present invention includes a gate electrode 150, a channel layer 130 disposed vertically apart from the gate electrode 150, a source and drain electrodes 180a and 180b disposed apart from each other on the channel layer 130, and a treatment layer 170 formed between the channel layer 130 and the source and drain electrodes 180a and 180b.

[0029] That is, a transistor according to an embodiment of the present invention may be a top gate type transistor including, as shown in the figure, a channel layer 130 formed on a substrate 110, a gate insulating film 140 formed on the channel layer 130, a gate electrode 150 formed on the gate insulating film 140, source electrode 180a and drain electrode 180b disposed apart from each other on the channel layer 130 with the gate insulating film 140 and the gate electrode 150 interposed therebetween, and treatment layers 170 respectively formed between the channel layer 130 and the source electrode 180a and between the channel layer 130 and the drain electrode 180b. However, the present invention is not limited thereto, and it goes without saying that embodiments of the present invention are also directly applicable to a bottom gate type transistor in which the gate electrode 150 is disposed below the channel layer 130.

[0030] As the substrate 110, a transparent substrate can be used. For example, when realizing a silicon substrate, a glass substrate, or a flexible display, a plastic substrate can be used. Also, as the substrate 110, a reflective substrate can be used. In this case, a metal substrate can be used. The metal substrate can be formed of stainless steel (SUS), titanium (Ti), molybdenum (Mo), or an alloy thereof. On the other hand, a buffer layer 120 may be formed on the substrate 110. At this time, the buffer layer 120 may be formed of an insulating material containing silicon oxide (SiO 2 )).

[0031] A channel layer 130 may be formed on the buffer layer 120. The channel layer 130 may be formed in a predetermined region on the buffer layer 120, and the gate electrode 110, which will be described later, may be formed apart above the channel layer 130 so as to overlap a partial region of the channel layer 130.

[0032] Here, the channel layer 130 may contain at least one of metal oxide, metal nitride, and metal oxynitride. That is, the channel layer 130 may be formed of a substance containing any one of metal oxide, metal nitride, and metal oxynitride. On the other hand, the channel layer 130 may be formed of a plurality of thin films having different compositions. For example, the channel layer 130 may be formed of oxides, nitrides, and oxynitrides containing at least one of indium (In), gallium (Ga), and zinc (Zn).

[0033] Conventionally, the channel layer 130 has been formed using amorphous silicon or crystalline silicon. However, since a glass substrate must be used as a substrate for a transistor using silicon, there is a drawback that it not only has a high weight but also cannot be used as a flexible display device because it does not bend. For this reason, in order to realize a high-speed element, that is, to improve mobility, a metal oxide, metal nitride, or metal oxynitride thin film having a high carrier concentration and excellent electrical conductivity can be used as the channel layer.

[0034] In addition, the channel layer 130 may be formed by doping with impurities. Thus, doping the channel layer 130 with impurities can improve the mobility of charges.

[0035] For example, the channel layer 130 may be formed of a material containing zinc oxide doped with impurities. Here, the impurities may include at least one substance among indium (In), gallium (Ga), tungsten (W), lithium (Li), sodium (Na), potassium (K), rubidium (Rb), cesium (Cs), beryllium (Be), magnesium (Mg), calcium (Ca), strontium (Sr), barium (Ba), titanium (Ti), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), manganese (Mn), technetium (Tc), rhenium (Re), iron (Fe), ruthenium (Ru), osmium (Os), cobalt (Co), rhodium (Rh), iridium (Ir), nickel (Ni), palladium (Pd), platinum (Pt), silver (Ag), gold (Au), boron (B), thallium (Tl), silicon (Si), germanium (Ge), tin (Sn), lead (Pb), phosphorus (P), and arsenic (As).

[0036] Indium (In) is a metal with a relatively low band gap and a relatively high standard electrode potential, and is characterized by increasing the charge concentration and improving the mobility. In contrast, gallium (Ga) is a metal with a relatively high band gap and a relatively high standard electrode potential, and is characterized by decreasing the charge concentration and improving the stability. Therefore, the electrical conductivity of the channel layer 130 can be adjusted by controlling the content of impurities contained in the metal oxide thin film. Thus, the channel layer 130 made of an oxide has the property that the higher the oxygen ratio, the lower the electrical conductivity, and the higher the oxygen ratio, the higher the electrical conductivity.

[0037] In addition, the channel layer 130 may contain magnesium (Mg) as an impurity to form a p-type channel layer, or may contain silicon (Si) as an impurity to form an n-type channel layer. Moreover, the channel layer 130 may contain various noble metals such as ruthenium (Ru), platinum (Pt), gold (Au), silver (Ag), rhodium (Rh), palladium (Pd), osmium (Os), iridium (Ir), yttrium (Yi), tungsten (W), molybdenum (Mo), etc.

[0038] A gate insulating film 140 may be formed on the channel layer 130. Such a gate insulating film 140 may be formed in a partial region on the channel layer 130. The gate insulating film 140 has excellent adhesion to a metal substance and, moreover, has excellent breakdown voltage resistance. It may be formed using one or more insulating substances of inorganic insulating films including silicon oxide (SiO 2 ), silicon nitride (SiN), alumina (Al 2 O 3 ), zirconia (ZrO 2 ).

[0039] The gate electrode 150 may be formed on the gate insulating film 140. The gate electrode 150 may be formed using a conductive substance. For example, it may be formed from at least one of the metals aluminum (Al), neodymium (Nd), silver (Ag), chromium (Cr), titanium (Ti), tantalum (Ta), molybdenum (Mo), and copper (Cu) or an alloy containing these. Also, the gate electrode 150 is not limited to a single layer and may be formed as a multilayer composed of a plurality of metal layers. That is, it may be formed as a bilayer including metal layers such as chromium (Cr), titanium (Ti), tantalum (Ta), molybdenum (Mo), etc., which have excellent physicochemical properties, and metal layers of an aluminum (Al)-based, silver (Ag)-based, or copper (Cu)-based system with low specific resistance.

[0040] On the channel layer 130, an insulating film 160 may be formed that covers the gate electrode 150 and has contact holes that expose a part of the surface of the channel layer 130 on both sides of the gate electrode 150. That is, contact holes are formed in the insulating film 160 so that the source electrode 180a and the drain electrode 180b can be electrically connected to the channel layer 130 via the treatment layer 170, respectively. Such an insulating film 160 may be formed of an insulating material containing silicon oxide (SiO 2 ).

[0041] A treatment layer 170 is formed on a part of the surface of the channel layer 130 exposed by the contact holes. Such a treatment layer 170 may contain a metal element. That is, the treatment layer 170 may be formed of a material containing at least one of metal oxides, metal nitrides, and metal oxynitrides, or alternatively, may be formed of a metal or an alloy.

[0042] For example, the treatment layer 170 may contain at least one element of indium (In), gallium (Ga), zinc (Zn), tin (Sn), and nickel (Ni), and at least one element of oxygen (O) and nitrogen (N). That is, the treatment layer 170 may be formed of an oxide, nitride, or oxynitride containing at least one of indium (In), gallium (Ga), zinc (Zn), tin (Sn), and nickel (Ni).

[0043] In addition, the treatment layer 170 may contain at least one element of silver (Ag), platinum (Pt), iridium (Ir), molybdenum (Mo), cobalt (Co), ruthenium (Ru), and titanium (Ti). That is, the treatment layer 170 may be formed of a metal, alloy, oxide, nitride, oxynitride, or a compound in which hydrogen is bonded thereto, containing at least one of silver (Ag), platinum (Pt), iridium (Ir), molybdenum (Mo), cobalt (Co), ruthenium (Ru), and titanium (Ti).

[0044] For example, the treatment layer 170 may be formed of a metal oxide, a metal nitride, or a metal oxynitride having a composition different from that of the metal oxide, the metal nitride, or the metal oxynitride forming the channel layer 130. For example, when the metal oxide, the metal nitride, or the metal oxynitride contained in the channel layer 130 is an oxide, a nitride, or an oxynitride of a first metal element, and the metal oxide, the metal nitride, or the metal oxynitride contained in the treatment layer 170 is an oxide, a nitride, or an oxynitride of a second metal element, the oxide, the nitride, or the oxynitride of the first metal element may have a composition different from that of the oxide, the nitride, or the oxynitride of the second metal element. At this time, when the oxide, the nitride, or the oxynitride of the first metal element and the oxide, the nitride, or the oxynitride of the second metal element are each doped with impurities, the treatment layer 170 may contain a greater content of impurities of at least one of indium (In), gallium (Ga), tungsten (W), lithium (Li), sodium (Na), potassium (K), rubidium (Rb), cesium (Cs), beryllium (Be), magnesium (Mg), calcium (Ca), strontium (Sr), barium (Ba), titanium (Ti), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), manganese (Mn), technetium (Tc), rhenium (Re), iron (Fe), ruthenium (Ru), osmium (Os), cobalt (Co), rhodium (Rh), iridium (Ir), nickel (Ni), palladium (Pd), platinum (Pt), silver (Ag), gold (Au), boron (B), thallium (Tl), silicon (Si), germanium (Ge), tin (Sn), lead (Pb), phosphorus (P), and arsenic (As) than the channel layer 130. For example, when the channel layer 130 contains impurities of 20 at% or more and less than 40 at% with respect to the whole of the oxide, the nitride, or the oxynitride of the first metal element, the treatment layer 170 may contain impurities of 40 at% or more and less than 60 at% with respect to the whole of the oxide, the nitride, or the oxynitride of the second metal element. Thus, the treatment layer 170 having a high impurity content may have an even lower oxygen (O) content than the channel layer 130.

[0045] Thus, when a treatment layer containing a metal element is formed on a part of the surface of the channel layer, the contact resistance can be reduced and the threshold voltage can be decreased. Further, when the source electrode 180a and the drain electrode 180b are formed on the channel layer 140 without forming the treatment layer 170, in the process of forming contact holes in the insulating film 160 to form the source electrode 180a and the drain electrode 180b, the channel layer 130 is exposed to an etching gas. When the channel layer 130 is exposed to the etching gas, the channel layer 130 is damaged by the etching gas from the upper surface to a predetermined depth and loses oxygen, and as a result, it becomes an oxygen-deficient state. Further, if the source electrode 180a and the drain electrode 180b are directly formed on the surface of the channel layer 130 damaged by the etching gas in this way, oxygen moves from the channel layer 130 to the source electrode 180a and the drain electrode 180b when the transistor is driven. Thus, when oxygen deficiency occurs in the channel layer, the channel layer unexpectedly increases in electrical conductivity and becomes conductive, resulting in a short circuit of the element and making it impossible to stably drive the transistor.

[0046] On the other hand, as in the embodiment of the present invention, when a treatment layer 170 containing a metal element is formed between the channel layer 140 and the source electrode 180a and the drain electrode 180b, the metal element or oxygen contained in the treatment layer 170 can fill the place where oxygen has escaped in the channel layer 130. That is, the metal element or oxygen contained in the treatment layer 170 spreads to the place where oxygen has escaped in the channel layer 130, preventing oxygen from moving from the channel layer 130 to the source electrode 180a and the drain electrode 180b, and preventing the channel layer 130 from becoming conductive.

[0047] At this time, the treatment layer 170 may be formed to have a thickness D of 30 to 100 Å. At this time, when the treatment layer 170 is formed to have a thickness of less than 30 Å, a sufficient oxygen transfer prevention effect cannot be obtained. When the treatment layer 170 is formed to have a thickness exceeding 100 Å, there is a problem that the process time is excessively prolonged, hindering the miniaturization of the transistor. Therefore, the treatment layer 170 is preferably formed to have a thickness of 30 to 100 Å.

[0048] The source electrode 180a and the drain electrode 180b are formed on the treatment layer 170. That is, the source electrode 180a and the drain electrode 180b are formed to contact each other on the treatment layer 170 formed in the contact hole, and the source electrode 180a and the drain electrode 180b may be formed to be separated from each other with the gate electrode 110 interposed therebetween. At this time, the source electrode 180a and the drain electrode 180b may be formed to contact the treatment layer 170 and also extend on the insulating film 160. The source electrode 180a and the drain electrode 180b may be formed by the same process using the same material, or may be formed using a conductive material. For example, they may be formed from at least one of the metals aluminum (Al), neodymium (Nd), silver (Ag), chromium (Cr), titanium (Ti), tantalum (Ta), and molybdenum (Mo), or an alloy containing these. That is, they may be formed from the same material as the gate electrode 150, or may be formed from a material different from the gate electrode 150. Note that the source electrode 180a and the drain electrode 180b are not limited to a single layer and may be formed in multiple layers. At this time, each layer may contain different metals or alloys from each other.

[0049] FIG. 2 is a diagram schematically showing a transistor according to another embodiment of the present invention.

[0050] Referring to FIG. 2, a transistor according to another embodiment of the present invention includes a gate electrode 150, a channel layer 130 disposed vertically apart from the gate electrode 150, source and drain electrodes 180a and 180b disposed apart from each other on the channel layer 130, and a first treatment layer 172 and a second treatment layer 174 formed between the channel layer 130 and the source and drain electrodes 180a and 180b.

[0051] Here, the transistor according to another embodiment of the present invention is different from the transistor of the foregoing embodiment in that the treatment layer 170 is composed of a first treatment layer 172 and a second treatment layer 174 disposed on the first treatment layer 172, but the contents described with respect to the transistor according to the foregoing embodiment are directly applicable to other configurations.

[0052] Here, as described above with respect to the treatment layer 170, the first treatment layer 172 may contain at least one of indium (In), gallium (Ga), zinc (Zn), tin (Sn), and nickel (Ni) and at least one of oxygen (O) and nitrogen (N). That is, the first treatment layer 172 may be formed of an oxide, a nitride, or a oxynitride containing at least one of indium (In), gallium (Ga), zinc (Zn), tin (Sn), and nickel (Ni).

[0053] At this time, the first treatment layer 172 may have a higher impurity content than the channel layer 130. That is, when both the channel layer 130 and the first treatment layer contain a metal oxide, a metal nitride, or a metal oxynitride doped with impurities, the first treatment layer 172 may have a higher impurity content than the channel layer 130.

[0054] On the one hand, the second treatment layer 174 may contain at least one element among silver (Ag), platinum (Pt), iridium (Ir), molybdenum (Mo), cobalt (Co), ruthenium (Ru), and titanium (Ti). That is, the second treatment layer 172 may be formed of a metal, alloy, oxide, nitride, oxynitride, or a compound having hydrogen bonded thereto, containing at least one of silver (Ag), platinum (Pt), iridium (Ir), molybdenum (Mo), cobalt (Co), ruthenium (Ru), and titanium (Ti).

[0055] Thus, by forming the first treatment layer 172 and the second treatment layer 174, not only can the charge mobility be improved, but also the contact resistance can be reduced and the threshold voltage can be decreased.

[0056] FIG. 3 is a diagram schematically showing a transistor according to still another embodiment of the present invention.

[0057] Referring to FIG. 3, a transistor according to still another embodiment of the present invention includes a gate electrode 150, a channel layer 130 disposed vertically apart from the gate electrode 150, a first insulating film 160 disposed on the channel layer 130 and having a first contact hole (not shown) exposing a part of the surface of the channel layer 130, a second insulating film 165 disposed on the first insulating film 160 and exposing the first contact hole and a part of the surface of the first insulating film 160 extending from the first contact hole, a treatment layer 170 formed on a part of the surface of the channel layer 130 exposed by the first insulating film 160, and source and drain electrodes 180a and 180b disposed apart from each other on the treatment layer 170 and extending on a part of the surface of the first insulating film 160 exposed by the second insulating film 165.

[0058] A transistor according to still another embodiment of the present invention differs from the transistor according to the above-described embodiment in that a second insulating film 165 is further disposed on the transistor, and the contents described with respect to the transistor according to the above-described embodiment or another embodiment are directly applicable to the other configurations. At this time, since the first insulating film 160 and the first contact hole of the transistor according to still another embodiment of the present invention have the same configuration as the insulating film 160 and the contact hole of the transistor according to the first embodiment of the present invention described above, the same reference numerals are assigned.

[0059] Here, the first insulating film 160 and the second insulating film 165 may have different compositions. That is, the first insulating film 160 may contain silicon oxide (SiO), and the second insulating film 165 may contain silicon nitride (SiN). Here, the second insulating film 165 is formed on the first insulating film 160 and has a second contact hole larger than the first contact hole at a position overlapping the first contact hole formed in the first insulating film 160. For this reason, when the second insulating film 165 is disposed on the first insulating film 160, the first contact hole and a part of the surface of the first insulating film extending from the first contact hole can be exposed. Further, the channel layer 130 may be formed of a metal oxide, a metal nitride, or a metal oxynitride, and the treatment layer 170 may be formed of an oxide, a nitride, or an oxynitride containing at least one of indium (In), gallium (Ga), zinc (Zn), tin (Sn), and nickel (Ni), or alternatively, silver (Ag), platinum (Pt), iridium (Ir), molybdenum (Mo), cobalt (Co), ruthenium (Ru), and titanium (Ti). It goes without saying that the treatment layer 170 may be formed in a multilayer structure including the first treatment layer 172 and the second treatment layer 174 described above.

[0060] FIG. 4 is a diagram schematically showing a method for manufacturing a transistor according to an embodiment of the present invention.

[0061] Referring to FIG. 4, the method for manufacturing a transistor according to an embodiment of the present invention includes a step of preparing a substrate 110 on which a gate electrode 150 and a channel layer 130 disposed vertically apart from the gate electrode 150 are formed, and a step of forming a treatment layer 170 for connecting the channel layer 130, a source electrode 180a, and a drain electrode 180b on the channel layer 130.

[0062] First, in the step of preparing the substrate 110, as shown in FIG. 4(a), a substrate on which a channel layer 130 is formed and patterning for forming source and drain electrodes 180a and 180b is performed is prepared. That is, in the step of preparing the substrate 110, a substrate 110 on which a channel layer 130 is formed on the substrate 110, a gate insulating film 140 is formed on the channel layer 130, and a gate electrode 150 is formed on the gate insulating film 140 can be prepared. Further, a buffer layer 120 may be further formed between the substrate 110 and the channel layer 130, and an insulating film 160 having a contact hole for exposing a part of the surface of the channel layer 130 may be further formed on the channel layer 130 to form the source electrode 180a and the drain electrode 180b.

[0063] On the other hand, although not shown in the drawings, in the step of preparing the substrate 110, a substrate 110 may be prepared in which a channel layer 130 is formed, the channel layer 130 being disposed at a distance from the gate electrode 150 in the vertical direction and having a part of its surface exposed by a first contact hole formed in the first insulating film 160 and a second contact hole formed in the second insulating film 165. Here, the second insulating film 165 may be disposed on the first insulating film 160 and may be arranged to expose the first contact hole and a part of the surface of the first insulating film 160 extending from the first contact hole. In this case, a part of the surface of the channel layer 130 is exposed by the first contact hole and the second contact hole formed in the stacked first insulating film 160 and second insulating film 165, respectively, and a treatment layer 170 may be formed on a part of the exposed surface of the channel layer 130.

[0064] In the step of forming the treatment layer 170, as shown in FIG. 4(b), a treatment layer 170 for connecting the channel layer 130 to the source electrode 180a and the drain electrode 180b is formed on the channel layer 130. Here, the treatment layer 170 may be formed on a part of the surface of the channel layer 130 exposed by the contact hole of the insulating film 160.

[0065] Such a treatment layer 170 may be formed of a substance containing a metal element.

[0066] That is, the treatment layer 170 may contain at least one of indium (In), gallium (Ga), zinc (Zn), tin (Sn), and nickel (Ni), and at least one of oxygen (O) and nitrogen (N). Accordingly, in the step of forming the treatment layer 170, the treatment layer 170 can be formed using at least one of indium (In), gallium (Ga), zinc (Zn), tin (Sn), and nickel (Ni), and at least one of oxygen (O) and nitrogen (N).

[0067] Further, the treatment layer 170 may contain at least one of silver (Ag), platinum (Pt), iridium (Ir), molybdenum (Mo), cobalt (Co), ruthenium (Ru), and titanium (Ti), and at least one element of oxygen (O), nitrogen (N), hydrogen (H), and argon (Ar). Accordingly, in the step of forming the treatment layer 170, the treatment layer 170 can be formed using at least one of silver (Ag), platinum (Pt), iridium (Ir), molybdenum (Mo), cobalt (Co), ruthenium (Ru), and titanium (Ti), and at least one element of oxygen (O), nitrogen (N), hydrogen (H), and argon (Ar).

[0068] Such a treatment layer 170 may be formed by various thin film forming processes. That is, the step of forming the treatment layer 170 may be performed by a selective deposition method or a non-selective deposition method, and such deposition may be performed at a temperature of 100°C or higher, or may be performed using plasma.

[0069] For example, the step of forming the treatment layer 170 may be performed by an atomic layer deposition (ALD) process in which a process cycle including a step of supplying a source gas onto the channel layer 130 and a step of supplying a reaction gas onto the channel layer 130 is repeatedly performed a plurality of times. Such an atomic layer deposition process may be performed by repeatedly performing a process cycle of supplying a source gas, purging the source gas, supplying a reaction gas, and purging the reaction gas in this order a plurality of times.

[0070] At this time, in the step of supplying the raw material gas, when the treatment layer 170 contains at least one of indium (In), gallium (Ga), zinc (Zn), tin (Sn), and nickel (Ni), and at least one of oxygen (O) and nitrogen (N), a raw material gas containing at least one of indium (In), gallium (Ga), zinc (Zn), tin (Sn), and nickel (Ni) can be supplied. At this time, in the step of supplying the reaction gas, a reaction gas containing at least one of oxygen (O) and nitrogen (N) can be supplied. As such a reaction gas, oxygen (O 2 ), nitrogen oxide (N x O y ), nitrogen (N 2 ), and ammonia (NH 3 ) at least one of the gases can be used.

[0071] Also, in the step of supplying the raw material gas, when the treatment layer 170 contains at least one of silver (Ag), platinum (Pt), iridium (Ir), molybdenum (Mo), cobalt (Co), ruthenium (Ru), and titanium (Ti), and at least one of oxygen (O), nitrogen (N), hydrogen (H), and argon (Ar), a raw material gas containing at least one of silver (Ag), platinum (Pt), iridium (Ir), molybdenum (Mo), cobalt (Co), ruthenium (Ru), and titanium (Ti) can be supplied. At this time, in the step of supplying the reaction gas, a reaction gas containing at least one of oxygen (O), nitrogen (N), hydrogen (H), and argon (Ar) can be supplied. As such a reaction gas, oxygen (O 2 ), nitrogen oxide (N x O y ), nitrogen (N 2 ), hydrogen (H 2 ), and ammonia (NH 3 ) at least one of the gases can be used.

[0072] Furthermore, although not shown in the drawings, the step of forming the treatment layer 170 may include a step of forming a first treatment layer 172 and a step of forming a second treatment layer 174 on the first treatment layer 172. At this time, the step of forming the first treatment layer 172 may be performed by supplying a source gas containing at least one of indium (In), gallium (Ga), zinc (Zn), tin (Sn), and nickel (Ni), and a reaction gas containing at least one of oxygen (O) and nitrogen (N). The step of forming the second treatment layer 174 may be performed by supplying a source gas containing at least one of silver (Ag), platinum (Pt), iridium (Ir), molybdenum (Mo), cobalt (Co), ruthenium (Ru), and titanium (Ti), and a reaction gas containing at least one of oxygen ( 2 ), nitrogen oxide (N x O y ), nitrogen (N 2 ), hydrogen (H 2 ), and ammonia (NH 3 ). At this time, at least one of the step of forming the first treatment layer 172 and the step of forming the second treatment layer 174 may be performed by a selective deposition method or a non-selective deposition method. Such deposition may be performed at a temperature of 100°C or higher, or may be performed using plasma.

[0073] Thus, according to the embodiment of the present invention, by forming a treatment layer for preventing oxygen deficiency of the channel layer between the channel layer and the source and drain electrodes, conduction of the channel layer can be prevented and switching characteristics can be improved.

[0074] In addition, the contact resistance between the channel layer and the source and drain electrodes can be effectively reduced, and the characteristics and reliability of the device can be improved.

[0075] Although the preferred embodiments of the present invention have been described and illustrated using specific terms, these terms are merely for clearly explaining the present invention. It is obvious that various modifications and changes can be made to the embodiments of the present invention and the described terms without departing from the technical idea and scope of the appended claims. These modified embodiments should not be individually understood as departing from the idea and scope of the present invention, but should be said to belong within the scope of the claims of the present invention.

Claims

1. A channel layer containing at least one of metal oxide, metal nitride, and metal oxynitride, source and drain electrodes formed on the channel layer, a first treatment layer formed between the channel layer and the source and drain electrodes, A transistor comprising:

2. The transistor according to claim 1, wherein the first treatment layer contains at least one of indium (In), gallium (Ga), zinc (Zn), tin (Sn), and nickel (Ni), and at least one element of oxygen (O) and nitrogen (N).

3. The transistor according to claim 1, wherein the first treatment layer contains at least one element of silver (Ag), platinum (Pt), iridium (Ir), molybdenum (Mo), cobalt (Co), ruthenium (Ru), and titanium (Ti).

4. Further comprising a second treatment layer formed on the first treatment layer, The transistor according to claim 2, wherein the second treatment layer contains at least one element of silver (Ag), platinum (Pt), iridium (Ir), molybdenum (Mo), cobalt (Co), ruthenium (Ru), and titanium (Ti).

5. Preparing a substrate on which a channel layer containing at least one of metal oxide, metal nitride, and metal oxynitride is formed and patterning is performed to form source and drain electrodes; Forming a first treatment layer on the channel layer; A method for manufacturing a transistor, comprising:

6. In the step of forming the first treatment layer, The method for manufacturing a transistor according to claim 5, wherein the first treatment layer is formed using at least one of indium (In), gallium (Ga), zinc (Zn), tin (Sn), and nickel (Ni), and at least one element of oxygen (O) and nitrogen (N).

7. At least one element of the oxygen (O) and nitrogen (N) is oxygen (O ２ ), nitrogen oxide (N ｘ O ｙ ), nitrogen (N ２ ), and ammonia (NH ３ ), and is provided from at least one gas of these, the method for manufacturing a transistor according to claim 6.

8. In the step of forming the first treatment layer, The method for manufacturing a transistor according to claim 6, wherein the first treatment layer is formed using at least one of silver (Ag), platinum (Pt), iridium (Ir), molybdenum (Mo), cobalt (Co), ruthenium (Ru), and titanium (Ti), and at least one element of oxygen (O), nitrogen (N), hydrogen (H), and argon (Ar).

9. The step of forming the first treatment layer is performed at a temperature of 100°C or higher, or is performed using plasma, in the method for manufacturing a transistor according to claim 5.

10. The step of forming the first treatment layer is performed by a selective deposition method or a non-selective deposition method, in the method for manufacturing a transistor according to claim 5.

11. further includes a step of forming a second treatment layer on the first treatment layer, and in the step of forming the second treatment layer, the second treatment layer is formed using at least one of silver (Ag), platinum (Pt), iridium (Ir), molybdenum (Mo), cobalt (Co), ruthenium (Ru), and titanium (Ti), and at least one element of oxygen (O), nitrogen (N), hydrogen (H), and argon (Ar), in the method for manufacturing a transistor according to claim 6.

12. At least one of the elements of nitrogen (N), hydrogen (H), and argon (Ar) is oxygen (O ２ ), nitrogen oxide (N ｘ O ｙ ), nitrogen (N ２ ), hydrogen (H ２ ), and ammonia (NH ３ ), and is provided from at least one of the gases, the method for manufacturing a transistor according to claim 8 or 11.

13. The step of forming the second treatment layer is performed at a temperature of 100°C or higher, or is performed using plasma, in the method for manufacturing a transistor according to claim 11.

14. The step of forming the second treatment layer is performed by a selective deposition method or a non-selective deposition method, in the method for manufacturing a transistor according to claim 11.

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