Flux relaxation in a superconducting circuit

Abstract

One example includes a superconducting circuit. The superconducting circuit components are fabricated on the first surface of a circuit layer. The circuit layer includes a dielectric material. The circuit includes a metal layer formed on the second surface opposite to the first surface of the circuit layer, and substrate through vias (TSVs) that are conductively coupled to the metal layer and extend through the circuit layer to the first surface. The circuit further includes a flux gasket that is conductively coupled to the TSVs on the first surface proximate to the superconducting circuit components and extends from the TSVs. The flux gasket may be configured to divert a magnetic field away from the superconducting circuit components.

Description

Technical Field

[0001] This specification generally relates to electronic circuits, and more particularly, to magnetic flux relaxation in superconducting circuits.

Background Art

[0002] Superconducting circuits operate based on the behavior of superconducting metals in a cryogenic environment. For example, at very low cryogenic temperatures (e.g., below 1 K), a superconducting metal can exhibit superconductivity where electrons can propagate with nearly zero resistance. A typical superconducting circuit can operate based on a bias current being provided to a bias input, for example, to affect the triggering of Josephson junctions and / or to provide magnetic flux to a superconducting loop. When a superconducting circuit is cooled from a typical ambient temperature environment to a cryogenic temperature, thus below the superconducting critical temperature of the superconducting device, noise currents can be generated and propagate into the superconducting circuit via the bias input. Such noise currents can generate magnetic flux on the superconducting loop, remain without dissipation, and can cause magnetic flux traps that can adversely affect the operation of the superconducting circuit after the superconducting circuit has been cooled to cryogenic temperatures.

Summary of the Invention

[0003] One example includes a superconducting circuit. The circuit includes superconducting circuit components fabricated on a first surface of a circuit layer. The circuit layer includes a dielectric material. The circuit includes a metal layer formed on a second surface opposite the first surface of the circuit layer, and a through-substrate via (TSV) conductively coupled to the metal layer and extending through the circuit layer to the first surface. The circuit further includes a magnetic flux gasket conductively coupled to the TSV on the first surface proximate to the superconducting circuit components and extending from the TSV. The magnetic flux gasket may be configured to divert a magnetic field away from the superconducting circuit components.

[0004] Another example described herein includes a method of manufacturing a superconducting circuit. The method includes depositing a metallic material to form a metallic layer and forming a TSV that is conductively coupled to the metallic layer and extends perpendicularly from the metallic layer. The method also includes depositing a dielectric material to surround the TSV on the metallic layer to form a circuit layer. The circuit layer includes a first surface and a second surface that is opposite the first surface and in contact with the metallic layer. The method also includes fabricating a superconducting circuit component on the first surface of the circuit layer. The method further includes forming a magnetic flux gasket that is conductively coupled to the TSV on the first surface proximate to the superconducting circuit component and extends from the TSV. The magnetic flux gasket may be configured to divert a magnetic field away from the superconducting circuit component.

[0005] Another example described in this specification includes a superconducting circuit system. The system includes a first superconducting circuit system. The first superconducting circuit system includes a first superconducting circuit component fabricated on a first surface of a first circuit layer. The first circuit layer includes a dielectric material. The first superconducting circuit system includes a first metal layer formed on a second surface opposite to the first surface of the first circuit layer, and a first TSV conductively coupled to the first metal layer and extending through the first circuit layer to the first surface. The first superconducting circuit system further includes a first magnetic flux gasket conductively coupled to the first TSV on the first surface proximate to the first superconducting circuit component and extending from the first TSV. The first magnetic flux gasket may be configured to deflect a magnetic field away from the superconducting circuit component. The system also includes a second superconducting circuit system. The second superconducting circuit system includes a second superconducting circuit component fabricated on a first surface of a second circuit layer. The second circuit layer includes a dielectric material. The second superconducting circuit system includes a second metal layer formed on a second surface opposite to the first surface of the second circuit layer, and a second TSV conductively coupled to the second metal layer and extending through the second circuit layer to the first surface of the second circuit layer. The second superconducting circuit system further includes a second magnetic flux gasket conductively coupled to the second TSV on the first surface of the second circuit layer proximate to the second superconducting circuit component and extending from the second TSV. The second magnetic flux gasket may be configured to deflect a magnetic field away from the superconducting circuit.

Brief Description of the Drawings

[0006]

Figure 1

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Embodiments for Carrying Out the Invention

[0007] This specification generally relates to electronic circuits, and more particularly, to magnetic flux relaxation in superconducting circuits. The superconducting circuit described herein can include superconducting circuitry fabricated on a first surface of a circuit layer, where the circuit layer also includes a second surface opposite the first surface. As described herein, the term "circuit layer" can refer to a wafer or die layer on which a superconducting circuit is fabricated in a layer composed of metal (e.g., including superconducting metal) and dielectric material. Thus, the first and second surfaces can correspond to opposite surfaces of the wafer or die on which the superconducting circuit is fabricated. The superconducting circuit can also include a metal layer formed on the second surface and at least one through-substrate via (TSV) conductively coupled to the metal layer and extending through the circuit layer from the second surface to the first surface of the circuit layer (e.g., surrounded by dielectric material). The superconducting circuit can further include a magnetic flux gasket that extends from each of the TSV(s) on the first surface of the circuit layer and can be disposed in proximity to the superconducting circuitry. The magnetic flux gasket can be configured to divert a magnetic field away from the superconducting circuitry.

[0008] As an example, the metal layer, the TSV(s), and each of the flux gaskets(s) can be integrally formed with each other. For example, the metal layer, the TSV, and each of the flux gaskets can be formed from a magnetic material such as iron (Fe), iron - silicon (FeSi), cobalt (Co), nickel (Ni), or permalloy. As a result, the flux provided through the superconducting circuit can align the magnetic dipoles within the metal layer, the TSV(s), and each of the flux gaskets(s), and isolate the magnetic field from the flow through the metal layer, the TSV(s), and each of the flux gaskets(s). For example, the superconducting circuit component can be disposed (e.g., surrounded) between a plurality of flux gaskets associated with each array of TSVs. Thus, the flux gasket disposed near the superconducting circuit component can deflect the magnetic field from the superconducting circuit component.

[0009] As an example, the superconducting circuit can be a first superconducting circuit, and the second superconducting circuit can be manufactured substantially in the same manner as the first superconducting circuit. For example, the second superconducting circuit can include second superconducting circuit components fabricated on a first surface of a second circuit layer, and the second circuit layer also includes a second surface on the opposite side of the first surface. The second superconducting circuit can also include a second metal layer formed on the second surface of the second circuit layer, and at least one second TSV conductively coupled to the second metal layer and extending through the second circuit layer from the second surface to the first surface (e.g., surrounded by a dielectric material). The second superconducting circuit can further include second flux gaskets extending from each of the second TSV(s) on the first surface of the second circuit layer and disposed in proximity to the second superconducting circuit components.

[0010] The first circuit layer and the second circuit layer can be stacked in an inverted manner with respect to each other, and the first surfaces of the first circuit layer and the second circuit layer respectively face each other. Therefore, the first superconducting circuit component and the second superconducting circuit component can be conductively coupled via bump bonding, and the first TSV and the second TSV, as well as the first magnetic flux gasket and the second magnetic flux gasket, can be axially aligned. As a result, the magnetic flux provided through the superconducting circuit is isolated in the metal layer of the superconducting circuit, the plurality of TSVs, and each magnetic flux gasket, and can pass between the magnetic flux gaskets of the plurality of superconducting circuits and escape from the superconducting circuit components. Therefore, the magnetic flux passing through the susceptible superconducting circuit components can be substantially relaxed.

[0011] FIG. 1 is an example of a block diagram of a superconducting circuit 100. The superconducting circuit 100 can be implemented in any of various superconducting applications such as a superconducting computer system. The superconducting circuit 100 includes a superconducting circuit component 102 fabricated on a first surface of a circuit layer, and the circuit layer also includes a second surface opposite to the first surface. As an example, the superconducting layer can include a dielectric material. The superconducting circuit 100 also includes a metal layer 104 formed on the second surface of the circuit layer. The metal layer 104 can be arranged as a thin film metal material, and thus can have a thickness smaller than the thickness of the dielectric material of the circuit layer. The superconducting circuit 100 also includes at least one through-substrate via (TSV) 106 that is conductively coupled to the metal layer 104 and extends through the circuit layer from the second surface to the first surface of the circuit layer (e.g., surrounded by a dielectric material). The superconducting circuit 100 further includes a magnetic flux gasket 108 that extends from each of the TSVs 106 (s) on the first surface of the circuit layer and can be arranged close to the superconducting circuit component 102. The magnetic flux gasket 108 can be configured to deflect a magnetic field from the superconducting circuit component 102, as will be described in more detail herein.

[0012] As an example, the metal layer 104, the TSVs 106 (plural possible), and the respective flux gaskets 108 (plural possible) can be integrally formed with each other. For example, the metal layer 104, the TSVs 106, and the respective flux gaskets 108 can be formed from a magnetic material such as iron (Fe), iron-silicon (FeSi), cobalt (Co), nickel (Ni), or permalloy. As a result, the flux provided through the superconducting circuit 100 can align the magnetic dipoles within the metal layer 104, the TSVs 106 (plural possible), and the respective flux gaskets 108 (plural possible), and isolate the magnetic field from flowing through the metal layer 104, the TSVs 106, and the respective flux gaskets 108. For example, the superconducting circuit component 102 can be disposed between (e.g., surrounded by) the plurality of flux gaskets 108 associated with each array of TSVs 106. Thus, the flux gasket 108 disposed near the superconducting circuit component 102 can deflect the magnetic field from the superconducting circuit component 102. Thus, the arrangement of the metal layer 104, the TSVs 106 (plural possible), and the respective flux gaskets 108 (plural possible) can provide a more deterministic, and thus less probabilistic, process of deflecting the flux from the superconducting circuit component 102.

[0013] As an example, the superconducting circuit 100 can be a first superconducting circuit, and the second superconducting circuit can be manufactured substantially in the same manner as the first superconducting circuit. Thus, each of the superconducting circuits can include superconducting circuit components 102, a metal layer 104, TSVs 106 (plural possible), and flux gaskets 108 (plural possible) in a similar arrangement. For example, the first circuit layer and the second circuit layer can be stacked in an inverted manner with respect to each other, and the first surfaces of the first circuit layer and the second circuit layer respectively face each other. Thus, the superconducting circuit components 102 of the first superconducting circuit and the second superconducting circuit can be conductively coupled via bump bonding. As an example, the TSVs 106 (plural possible) of the first superconducting circuit and the second superconducting circuit, and thus the respective flux gaskets 108, can be axially aligned. As a result, the magnetic flux provided through the superconducting circuit can be isolated by the metal layer 104 of the superconducting circuit, the plurality of TSVs 106, and the respective flux gaskets 108. The magnetic field that passes through the metal layer 104, along the TSVs 106 (plural possible), and enters the flux gasket 108 (plural possible) of the first superconducting circuit thus passes through a small air gap between the plurality of superconducting circuits, enters the flux gasket 108 (plural possible), and reaches the metal layer 104 of the other superconducting circuit along the TSVs 106 (plural possible). Thus, the magnetic flux passing through the vulnerable superconducting circuit components 102 can be substantially relaxed.

[0014] Figure 2 is an exemplary diagram 200 of a superconducting circuit. The superconducting circuit is shown in a first view 202 and a second view 204 of the diagram 200. The first view 202 corresponds to a cross-sectional view of the superconducting circuit that can further extend in each direction within the XZ plane. The second view 204 corresponds to a plan view along the Y axis. The superconducting circuit can correspond to the superconducting circuit 100 in the example of FIG. 1. Thus, in the following description of the example of FIG. 2, the example of FIG. 1 is referred to.

[0015] In the example of FIG. 2, the superconducting circuit includes a circuit layer 206. The circuit layer 206 can correspond to a dielectric material between a first surface 208 and a second surface 210. The superconducting circuit includes superconducting circuit components 212 distributed at a plurality of positions along the first surface 208 of the circuit layer 206. Further, the superconducting circuit includes a plurality of magnetic flux gaskets 214 on the first surface 208. In the example of FIG. 2, in the second view 204, the superconducting circuit components 212 and the magnetic flux gaskets 214 are arranged in an alternating array, and each set of the superconducting circuit components 212 is arranged between the magnetic flux gaskets 214. In particular, in the example of FIG. 2, the superconducting circuit components 212 are surrounded by the magnetic flux gaskets 214 in a direction orthogonal to the XZ plane. In the example of FIG. 2, the superconducting circuit components 212 and the magnetic flux gaskets 214 are shown as having a square shape in the XZ plane. However, other shapes and arrangements (e.g., circular, rectangular, or asymmetric shapes) are possible as alternatives.

[0016] The superconducting circuit also includes a plurality of TSVs 216 extending between the first surface 208 and the second surface 210 of the circuit layer 206. Each of the plurality of TSVs 216 is conductively coupled to a metal layer 218 deposited on the second surface 210 of the circuit layer 206. Each of the plurality of TSVs 216 is conductively coupled to one of each of the plurality of magnetic flux gaskets 214, and the plurality of TSVs 216 provides a conductive connection between the metal layer 218 and the magnetic flux gaskets 214. For example, the metal layer 218, the TSVs 216, and the magnetic flux gaskets 214 can be formed from a magnetic material such as iron (Fe), iron-silicon (FeSi), cobalt (Co), nickel (Ni), or permalloy, and can be integrally formed with each other. In the example of FIG. 2, the plurality of TSVs 216 are shown as having a square cross-sectional shape in the XZ plane, but can be arranged in any of a variety of other cross-sectional shapes, can be solid, can be hollow, or can be filled with a dielectric material.

[0017] As an example, a superconducting circuit can be formed by first depositing a metal material to form a metal layer 218. Next, a plurality of TSVs 216 are formed on the metal layer 218, and then a dielectric material can be deposited to form a circuit layer 206. Thus, the dielectric material of the circuit layer 206 can surround each of the plurality of TSVs 216, and the plurality of TSVs 216 extend from a first surface 208 to a second surface 210 of the circuit layer 206. Next, a magnetic flux gasket 214 can be formed on the first surface 208 of the circuit layer 206 in a state of being in conductive contact with each of the respective TSVs 216. Finally, a superconducting circuit component 212 can be fabricated on the first surface 208 of the circuit layer 206 in a space between the plurality of magnetic flux gaskets 214.

[0018] As described above in the example of FIG. 1, a superconducting circuit system can include two superconducting circuits. Thus, the superconducting circuit of the diagram 200 can be one of the two superconducting circuits that form the superconducting circuit system.

[0019] FIG. 3 is an example of a superconducting circuit system 300. The superconducting circuit system 300 includes a first superconducting circuit 302 and a second superconducting circuit 304. Each of the superconducting circuits 302 and 304 can correspond to the superconducting circuit 100 or the superconducting circuit in the respective examples of FIGS. 1 and 2. Thus, in the following description of the example of FIG. 3, the examples of FIGS. 1 and 2 are referred to.

[0020] In the example of FIG. 3, the first superconducting circuit 302 and the second superconducting circuit 304 are shown as being manufactured in substantially the same manner as the superconducting circuits in the example of FIG. 2. Thus, the first superconducting circuit 302 includes a circuit layer 306 having a first surface 308 and a second surface 310, and superconducting circuit components 312 dispersed at a plurality of positions along the first surface 308 of the circuit layer 306. In addition, the first superconducting circuit 302 includes a plurality of magnetic flux gaskets 314 on the first surface 308, a plurality of respective TSVs 316 extending between the first surface 308 and the second surface 310 of the circuit layer 306, and a metal layer 318 deposited on the second surface 310 of the circuit layer 306. Thus, each of the plurality of TSVs 316 is conductively coupled to one of the metal layer 318 and each of the plurality of magnetic flux gaskets 314.

[0021] Similarly, the second superconducting circuit 304 includes a circuit layer 320 having a first surface 322 and a second surface 324, and superconducting circuit components 326 dispersed at a plurality of positions along the first surface 322 of the circuit layer 320. In addition, the second superconducting circuit 304 includes a plurality of magnetic flux gaskets 328 on the first surface 322, a plurality of respective TSVs 330 extending between the first surface 322 and the second surface 324 of the circuit layer 320, and a metal layer 332 deposited on the second surface 324 of the circuit layer 320. Thus, each of the plurality of TSVs 330 is conductively coupled to one of the metal layer 332 and each of the plurality of magnetic flux gaskets 328.

[0022] In the example of FIG. 3, the superconducting circuits 302 and 304 are arranged to be stacked in an inverted manner with respect to each other, and the first surfaces 308 and 322 of the circuit layers 306 and 320, respectively, face each other. The first superconducting circuit component 312 and the second superconducting circuit component 326 are shown as being conductively coupled via bump bonds 334. The arrangement of the superconducting circuits 302 and 304 provides an air gap 336 between the first surfaces 308 and 322 of the circuit layers 306 and 320, respectively, in the region around the bump bonds 334. The gap described herein is the air gap 336, but as an example, it may alternatively be filled with a dielectric material. In the example of FIG. 3, based on the inverted and stacked arrangement of the superconducting circuits 302 and 304, the TSV 316 is axially aligned with the TSV 330. Accordingly, the magnetic flux gasket 314 is similarly axially aligned with the magnetic flux gasket 328.

[0023] Based on the inversion and stacked arrangement of superconducting circuits 302 and 304, metal layers 318 and 332, TSVs 316 and 330, and flux gaskets 314 and 328 cooperate to deflect magnetic fields from superconducting circuit components 312 and 326. For example, in response to the magnetic flux provided to the first superconducting circuit 302, magnetic flux is provided to the metal layer 318. The magnetic dipoles of the metal layer 318, TSV 316, and flux gasket 314 can be aligned, and the magnetic flux is provided as a magnetic field along the TSV 316 through the metal layer 318. Thus, the magnetic field can be provided from the TSV 316 into the flux gasket 314. However, instead of spreading to pass through the superconducting circuit component 312, the magnetic field can pass across the air gap 336 to the flux gasket 328, whose dipoles are similarly aligned. Thus, the magnetic field can pass from the flux gasket 328 along the TSV 330 to the metal layer 332 to complete the magnetic field circuit. Thus, the magnetic field is confined within the TSVs 316 and 330 and the flux gaskets 314 and 328 between the metal layer 318 and the metal layer 332 and passes through the superconducting circuit system 300. As a result, the magnetic flux passing through the superconducting circuit system 300 can be relaxed.

[0024] Considering the above structural and functional features, methods according to various aspects of the present invention will be better understood with reference to FIG. 4. For the purpose of simplicity of explanation, the method of FIG. 4 is shown and described as being executed continuously, but some aspects may occur in a different order than shown and described herein and / or simultaneously with other aspects according to the present invention, and thus it should be understood and recognized that the present invention is not limited by the order shown. Further, not all of the features shown are required to implement a method according to an aspect of the present invention.

[0025] FIG. 4 is an example of a method 400 for manufacturing a superconducting circuit (e.g., superconducting circuit 100). In 402, a metal material is deposited to form a metal layer (e.g., metal layer 104). In 404, TSVs (e.g., TSVs 106 (plural)) are formed to be conductively coupled to the metal layer and extend perpendicularly from the metal layer. In 406, a dielectric material is deposited on the metal layer to surround the TSVs, forming a circuit layer (e.g., circuit layer 206). The circuit layer can include a first surface (e.g., first surface 208) and a second surface (e.g., second surface 210) that is on the opposite side of the first surface and in contact with the metal layer. In 408, superconducting circuit components (e.g., superconducting circuit component 102) are fabricated on the first surface of the circuit layer. In 410, a magnetic flux gasket (e.g., magnetic flux gasket 108 (plural)) is conductively coupled to the TSVs on the first surface proximate to the superconducting circuit components and extends from the TSVs on the first surface proximate to the superconducting circuit components. The magnetic flux gasket may be configured to deflect a magnetic field away from the superconducting circuit components.

[0026] What has been described above are examples. Of course, it is impossible to describe all possible combinations of components or methods, but those skilled in the art will recognize that many more combinations and substitutions are possible. Accordingly, the present disclosure is intended to embrace all such changes, modifications, and variations that are included within the scope of this application, including the appended claims. As used herein, the term "comprising" means including, but not limited to. The term "based on" means at least partially based on. Further, when the disclosure or claim recites an element as "one," "first," or "another," or an equivalent thereof, it should be construed to include one or more such elements, and does not exclude or require two or more such elements.

Claims

1. A superconducting circuit, comprising: a superconducting circuit component fabricated on a first surface of a circuit layer, wherein the circuit layer includes a dielectric material; a metal layer formed on a second surface of the circuit layer opposite to the first surface; a substrate through via (TSV) conductively coupled to the metal layer and extending through the circuit layer to the first surface; a magnetic flux gasket conductively coupled to the TSV on the first surface proximate to the superconducting circuit component and extending from the TSV; wherein the magnetic flux gasket is configured to deflect a magnetic field away from the superconducting circuit component.

2. The circuit according to claim 1, wherein at least a portion of the metal layer, the TSV, and the magnetic flux gasket are integrally formed with each other.

3. The circuit according to claim 2, wherein at least a portion of the metal layer, the TSV, and the magnetic flux gasket are formed of a magnetic material.

4. The TSV is one of a plurality of TSVs arranged in an array in the circuit layer, each of the plurality of TSVs includes a respective magnetic flux gasket, and the superconducting circuit component is disposed between the respective magnetic flux gaskets associated with at least two of the plurality of TSVs. The circuit according to claim 1.

5. The superconducting circuit component is a first superconducting circuit component fabricated on a first circuit layer, the metal layer is a first metal layer, the TSV is a first TSV, the magnetic flux gasket is a first magnetic flux gasket, and the circuit further includes: a second superconducting circuit component fabricated on a first surface of a second circuit layer, wherein the second circuit layer includes the dielectric material; a second metal layer formed on a second surface of the second circuit layer opposite to the first surface; a second TSV conductively coupled to the second metal layer and extending through the second circuit layer to the first surface; a second magnetic flux gasket conductively coupled to the second TSV on the first surface proximate to the second superconducting circuit component and extending from the second TSV. The circuit according to claim 1.

6. The circuit according to claim 5, wherein the first superconducting layer and the second superconducting layer are arranged to be stacked in an inverted manner with respect to each other, and the first surface of the first circuit layer faces the first surface of the second circuit layer.

7. The first TSV and the second TSV are axially aligned, the first magnetic flux gasket is axially aligned with the second magnetic flux gasket, and is separated by a gap between the first surface of the first circuit layer and the first surface of the second circuit layer. The circuit according to claim 6.

8. The first superconducting circuit component and the second superconducting circuit component are conductively coupled via bump bonds. The circuit according to claim 6.

9. The first TSV is one of a plurality of first TSVs arranged in an array in the first circuit layer, each of the plurality of first TSVs includes a respective first magnetic flux gasket, and the first superconducting circuit component is disposed between the respective first magnetic flux gaskets associated with at least two of the plurality of first TSVs. The second TSV is one of a plurality of second TSVs arranged in an array in the second circuit layer, each of the plurality of second TSVs includes a respective second magnetic flux gasket, and the second superconducting circuit component is disposed between the respective second magnetic flux gaskets associated with at least two of the plurality of second TSVs. Each of the plurality of first TSVs is axially aligned with one of each of the second TSVs, and the first magnetic flux gasket of each of the plurality of first TSVs is axially aligned with the second magnetic flux gasket of each of the plurality of second TSVs, and is separated by a gap between the first surface of the first circuit layer and the first surface of the second circuit layer. The circuit according to claim 6.

10. An integrated circuit comprising the superconducting circuit according to claim 1.

11. A method of manufacturing a superconducting circuit, depositing a metal material to form a metal layer, forming a substrate through-via (TSV) that is conductively coupled to the metal layer and extends perpendicularly from the metal layer, depositing a dielectric material on the metal layer to surround the TSV to form a circuit layer, the circuit layer including a first surface and a second surface on the opposite side of the first surface and in contact with the metal layer, forming a circuit layer, fabricating a superconducting circuit component on the first surface of the circuit layer, forming a magnetic flux gasket that is conductively coupled to the TSV on the first surface proximate to the superconducting circuit component and extends from the TSV A method comprising a magnetic flux gasket configured to deflect a magnetic field from the superconducting circuit component. **Claim 12** The depositing of the metal material includes depositing a magnetic material to form the metal layer, the forming of the TSV includes forming the TSV from a soft magnetic material, and the forming of the magnetic flux gasket includes forming the magnetic flux gasket from the soft magnetic material. The method according to claim 11. **Claim 13** The forming of the TSV includes forming a plurality of TSVs arranged in an array, each of the plurality of TSVs being conductively coupled to the metal layer and extending perpendicularly from the metal layer. The depositing of the dielectric material includes depositing the dielectric material to surround each of the plurality of TSVs on the metal layer to form the circuit layer. The method according to claim 11. **Claim 14** The superconducting circuit component is a first superconducting circuit component fabricated on a first circuit layer, the metal layer is a first metal layer, the TSV is a first TSV, the magnetic flux gasket is a first magnetic flux gasket, and the method includes depositing the metal material to form a second metal layer, forming a second TSV conductively coupled to the second metal layer and extending perpendicularly from the second metal layer, depositing the dielectric material to surround the second TSV on the second metal layer to form a second circuit layer, the second circuit layer including a first surface and a second surface on the opposite side of the first surface and in contact with the second metal layer, fabricating a second superconducting circuit component on the first surface of the second circuit layer, forming a second magnetic flux gasket conductively coupled to the second TSV on the first surface adjacent to the second superconducting circuit component and extending from the second TSV, conductively coupling the first superconducting circuit component to the second superconducting circuit component via a bump bond The method according to claim 11, further comprising. **Claim 15** The method according to claim 14, wherein the first TSV and the second TSV are axially aligned, the first magnetic flux gasket is axially aligned with the second magnetic flux gasket, and they are separated by a gap between the first surface of the first circuit layer and the first surface of the second circuit layer.

16. A first superconducting circuit system, comprising: a first superconducting circuit component fabricated on a first surface of a first circuit layer, the first circuit layer including a dielectric material; a first metal layer formed on a second surface of the first circuit layer opposite to the first surface; a first substrate through-via (TSV) conductively coupled to the first metal layer and extending through the first circuit layer to the first surface; a first magnetic flux gasket conductively coupled to the first TSV on the first surface proximate to the first superconducting circuit component and extending from the first TSV, the first magnetic flux gasket being configured to deflect a magnetic field away from the superconducting circuit component; A first superconducting circuit system comprising: A second superconducting circuit system, comprising: a second superconducting circuit component fabricated on a first surface of a second circuit layer, the second circuit layer including the dielectric material; a second metal layer formed on a second surface of the second circuit layer opposite to the first surface; a second TSV conductively coupled to the second metal layer and extending through the second circuit layer to the first surface of the second circuit layer; a second magnetic flux gasket conductively coupled to the second TSV on the first surface of the second circuit layer proximate to the second superconducting circuit component and extending from the second TSV, the second magnetic flux gasket being configured to deflect a magnetic field away from the superconducting circuit component; A second superconducting circuit system comprising: An integrated circuit comprising:

17. The circuit according to claim 16, wherein the first superconducting layer and the second superconducting layer are arranged to be laminated in an inverted manner with respect to each other, and the first surface of the first circuit layer faces the first surface of the second circuit layer.

18. The first TSV and the second TSV are axially aligned, the first magnetic flux gasket is axially aligned with the second magnetic flux gasket, and is separated by a gap between the first surface of the first circuit layer and the first surface of the second circuit layer. The circuit according to claim 17.

19. The first superconducting circuit component and the second superconducting circuit component are conductively coupled via bump bonds. The circuit according to claim 17.

20. The first TSV is one of a plurality of first TSVs arranged in an array in the first circuit layer. Each of the plurality of first TSVs includes a respective first magnetic flux gasket. The first superconducting circuit component is disposed between the respective first magnetic flux gaskets associated with at least two of the plurality of first TSVs. The second TSV is one of a plurality of second TSVs arranged in an array in the second circuit layer. Each of the plurality of second TSVs includes a respective second magnetic flux gasket. The second superconducting circuit component is disposed between the respective second magnetic flux gaskets associated with at least two of the plurality of second TSVs. Each of the plurality of first TSVs is axially aligned with one of the respective second TSVs. The first magnetic flux gasket of each of the plurality of first TSVs is axially aligned with the second magnetic flux gasket of each of the plurality of second TSVs, and is separated by a gap between the first surface of the first circuit layer and the first surface of the second circuit layer. The circuit according to claim 17.

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