Method for Controlling Resistivity and Stress of Tungsten through PVD Sputtering Method

Abstract

A method for controlling the resistivity and stress of tungsten through a PVD sputtering method capable of controlling the initial interface of tungsten, forming stress in the tensile direction, and obtaining a film having a film quality close to 0 with a compressed film quality. 【Solution means】The present invention is a method for forming a tungsten film of a semiconductor element using a physical vapor deposition sputtering method on a semiconductor substrate, comprising: a) a first deposition step of depositing a tungsten film using magnetron sputtering with a power density of less than 0.5 W / cm 2 on the semiconductor substrate; b) a step of performing an RF biasing treatment in an atmosphere of an inert gas to modify the surface of the deposited tungsten; and c) a second deposition step of additionally depositing a tungsten film on the deposited tungsten film using magnetron sputtering with a power density of 0.5 W / cm 2 or more. The present invention relates to a method for forming a tungsten film of a semiconductor element, characterized by including the above steps.

Description

Technical Field

[0001] The present invention relates to a method for controlling the resistivity and stress of a semiconductor substrate film using a Physical Vapor Deposition (PVD) sputtering method. Specifically, it relates to a method for forming a tungsten (W) film of a semiconductor element using the PVD sputtering method and a tungsten film manufactured thereby.

Background Art

[0002] In recent years, due to the reduction in the size of various devices, the need for ultra-thin films in semiconductor elements and the like has been increasing. Here, metals such as Cu, which already have a low resistivity, have a problem in that the resistivity rapidly increases as the thickness decreases due to the material characteristics. Here, in next-generation wiring structures due to the miniaturization of semiconductor elements and the like, materials having relatively low resistivity such as tungsten (W), ruthenium (Ru), molybdenum (Mo), and rhodium (Rh) are being studied.

[0003] Here, the inventor of the present invention utilizes tungsten (W) to replace existing materials such as Cu, and during thin film deposition using the PVD sputtering method, the deposition process of the seed layer is repeated with deposition and plasma treatment to improve the initial interface layer, and then a tungsten thin film is grown on the improved interface layer to control the particle size and particle orientation of the deposited tungsten thin film. As a result, it has been confirmed that a tungsten thin film with significantly improved resistivity can be ultimately obtained, and the stress of the thin film can also be controlled.

Summary of the Invention

Problems to be Solved by the Invention

[0004] In a conventional PVD process, a common method for depositing tungsten or the like is to form a metal film in one process step with a constant DC power. However, different from the existing process consisting of one process step, the invention herein applies only an RF stage bias after depositing tungsten at a low power to perform plasma treatment, and repeats this process 1 to 4 times. After that, the purpose is to improve the particle size and specific resistance of the deposited tungsten.

[0005] Also, through the above repeating process, the purpose is to control the initial interface of tungsten and form stress in the tensile direction, so as to obtain a film quality with a compressed film quality and a stress close to 0.

[0006] However, the problems to be solved by the present invention are not limited to the problems mentioned above, and further problems not mentioned can be clearly understood by those with ordinary knowledge in the technical field according to the following description.

Means for Solving the Problems

[0007] According to an embodiment of the present invention, there is provided a method for forming a tungsten (W) film of a semiconductor element using a physical vapor deposition (PVD) sputtering method on a semiconductor substrate,

[0008] a) A first deposition step of depositing a tungsten film using magnetron sputtering with a power density of less than 0.5 W / cm² on the semiconductor substrate, 2 and a second deposition step of additionally depositing a tungsten film using magnetron sputtering with a power density of 0.5 W / cm² or more on the deposited tungsten film.

[0009] b) Performing an RF bias treatment in an atmosphere of an inert gas to modify the surface of the deposited tungsten,

[0010] c) A second deposition step of additionally depositing a tungsten film using magnetron sputtering with a power density of 0.5 W / cm² or more on the deposited tungsten film, 2 and a second deposition step of additionally depositing a tungsten film using magnetron sputtering with a power density of 0.5 W / cm² or more on the deposited tungsten film.

[0011] A tungsten film forming method for a semiconductor device is provided, which is characterized by including

[0012] According to another embodiment of the present invention, a tungsten film of a semiconductor device manufactured by a tungsten film forming method including the following steps a) to c),

[0013] a) A first deposition step of depositing a tungsten film using magnetron sputtering with a power density of less than 0.5 W / cm 2 on the semiconductor substrate;

[0014] b) A step of performing an RF bias treatment in an atmosphere of an inert gas to modify the surface of the deposited tungsten;

[0015] c) A second deposition step of additionally depositing a tungsten film using magnetron sputtering with a power density of 0.5 W / cm 2 or more on the deposited tungsten film;

[0016] A tungsten film of a semiconductor device is provided, which has a tungsten film quality with a ratio of particles having a particle size of 0.12 μm or more being 50% or more.

Advantages of the Invention

[0017] The tungsten film forming method according to an embodiment of the present invention has an advantage that the particle size and particle orientation of the deposited tungsten thin film can be controlled by classifying the PVD method into a first deposition step, a surface modification step, and a second deposition step to deposit by substituting a material such as Cu already in use.

[0018] In addition, by doing so, the particle size of the tungsten film can be increased compared to the existing PVD process, and a low specific resistance can be obtained by increasing the ratio of particles having (110) orientation. When applying the film formation method according to an embodiment of the present invention, since the internal tension is deformed and the distances between planes in each crystal grain become different, the stress of tungsten can also be controlled.

[0019] Furthermore, in the tungsten film formation process, by performing the first deposition step and the surface modification step 1 to 4 times before the second deposition step, or by adjusting the film formation conditions of tungsten (such as DC voltage, Ar, Kr flow rate, etc.), the effect of reducing the specific resistance can be adjusted to the most suitable shape, and the tungsten film obtained thereby exhibits excellent quality, which is effective.

[0020] The effects of the present invention are not limited to the above effects, and it should be understood that the effects include all effects that can be inferred from the configuration of the invention described in the detailed description or claims of the present invention.

Brief Description of the Drawings

[0021]

Figure 1

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Figure 7

Figure 8

Embodiments for Carrying Out the Invention

[0022] Hereinafter, embodiments will be described in detail with reference to the accompanying drawings. However, various changes may be made to the embodiments, and the scope of the patent application is not restricted or limited by such embodiments. It must be understood that all changes, equivalents, or alternatives to the embodiments are included in the scope of the rights.

[0023] The terms used in the embodiments are merely for the purpose of explanation and are not to be construed as having an intention to limit. Singular expressions include plural expressions unless they clearly have a different meaning in the context. In this specification, terms such as "including" or "having" indicate the presence of the features, numbers, steps, operations, components, parts, or combinations thereof described in the specification, and do not preclude the possibility of the presence or addition of one or more other features, numbers, steps, operations, components, parts, or combinations thereof.

[0024] Unless otherwise defined, all terms used herein, including technical or scientific terms, shall have the same meaning as commonly understood by one of ordinary skill in the art to which this embodiment belongs. Commonly used predefined terms shall be construed to have a meaning consistent with the meaning they have in the context of the relevant art and shall not be construed in an idealized or overly formal sense unless expressly defined herein.

[0025] In addition, when describing with reference to the accompanying drawings, regardless of the reference numerals in the drawings, the same components shall be given the same reference numerals and duplicate descriptions thereof shall be omitted. In the description of the embodiments, if the detailed description of the related known art is determined to obscure the gist of the embodiments unnecessarily, the detailed description thereof shall be omitted.

[0026] According to an embodiment of the present invention, there is provided a method for forming a tungsten (W) film of a semiconductor element using a physical vapor deposition (Physical Vapor Deposition; PVD) sputtering method on a semiconductor substrate,

[0027] a) a first deposition step of depositing a tungsten film using magnetron sputtering with a power density of less than 0.5 W / cm 2 on the semiconductor substrate;

[0028] b) a step of performing an RF bias treatment in an atmosphere of an inert gas to modify the surface of the deposited tungsten;

[0029] c) a second deposition step of additionally depositing a tungsten film using magnetron sputtering with a power density of 0.5 W / cm 2 or more on the deposited tungsten film;

[0030] There is provided a method for forming a tungsten film of a semiconductor element, characterized by including the above steps.

[0031] In the step a) (the first deposition step), a tungsten film can be deposited at a low power density (less than 0.5 W / cm 2 2) using DC power and RF power (RF stage biasing), and thus, the thickness of the tungsten film formed on the semiconductor substrate may be 0.3 to 0.6 nm.

[0032] If the thickness of the tungsten film formed through the first deposition step is less than 0.3 nm or exceeds 0.6 nm, as shown in Table 3 of the embodiments described below, there will be a problem that the specific resistance of the formed tungsten film increases.

[0033] In the first deposition step, the lower the DC power is, the more preferable it is. Specifically, it may be less than 1 kW, and as an example, it may be 0.2 kW to 0.6 kW, and more specifically, it may be 0.4 kW. Also, the RF power applied simultaneously with the DC power can be used in the range of 50 W to 200 W.

[0034] On the other hand, the semiconductor substrate used during the tungsten film formation is not greatly limited in its type as long as it is a wafer substrate having the same process effect. As an example of this, a wafer of SiO 2 2 may be used.

[0035] Furthermore, after the first deposition step of tungsten in step a), step b), which is a surface modification step of the deposited tungsten, may be included.

[0036] Step b) includes a process of forming a plasma of the gas using only RF power without applying DC power and using one or more inert gases selected from the group consisting of Ar, Kr, Ne, and Xe. Here, when considering the effective aspects of the invention, using Kr gas is more preferable than using Ar gas, but its type is not greatly limited.

[0037] Furthermore, the RF power may be 50 W to 200 W, and an RF bias process for about 2 seconds to 10 seconds is performed. Therefore, there is an advantage that the interface of the tungsten film can be improved.

[0038] On the other hand, among the tungsten film formation methods of the semiconductor element according to an embodiment of the present invention, the steps a) and b) may be performed not only once but up to four times at most. As a result, the tungsten film deposited primarily can be deposited with a thickness of 0.3 nm to 2.4 nm.

[0039] In this way, by performing the first deposition step (step a)) and the surface modification step (step b)) one or more times and four or fewer times, the interface of the seed layer can be improved, and the particle size of the manufactured tungsten film can be increased to improve the specific resistance.

[0040] When the steps a) and b) are not performed (performed 0 times), or when the number of repetitions of the steps a) and b) exceeds four times, as shown in FIG. 3, the specific resistance of the tungsten film increases, and there is a problem that it is not suitable for semiconductor elements used in small devices. In particular, when the number of repetitions of the steps a) and b) is 5 times, 8 times, or 12 times, it can be seen that the specific resistance is shown to be large to such an extent that there is no significant difference from the case where only the second deposition process is performed (steps a) and b) are not performed) (FIG. 3).

[0041] Moreover, by the repeatedly performed first deposition step and surface modification step, while controlling the initial interface of tungsten, stress can be formed in the attracting direction, and a film quality having a stress close to 0 in the compressed film quality can be obtained.

[0042] On the other hand, in the tungsten film formation method of the semiconductor element according to an embodiment of the present invention, after performing the steps a) and b) repeatedly 1 to 4 times, a high power density (0.5 W / cm 2A second deposition step (step c)) of additionally depositing a tungsten film on the deposited tungsten film using magnetron sputtering as described above may be included.

[0043] Thereby, the tungsten film can be deposited at once to a desired thickness, where the thickness of the tungsten film to be deposited is not greatly limited.

[0044] On the other hand, when considering the resistivity of the formed tungsten film, it is preferable that the DC power applied in the first deposition step of step a) is smaller than or the same as the DC power applied in the second deposition step of step c).

[0045] This is because, as shown in FIG. 5 below, in the case of a process where the DC power applied in the first deposition step is larger than the DC power applied in the second deposition step, a resistivity similar to that of an existing process that only performs the second deposition step is measured, indicating a somewhat larger resistivity. As the specific DC power applied in the second deposition step, it may be 1.0 kW or more, and as an example, it may be 1.0 kW or more and less than 3.0 kW, or 1.0 kW to 1.6 kW, or more specifically 1.2 kW.

[0046] All of the steps a), b), and c) are performed in a chamber where physical vapor deposition sputtering is performed, and the pressure condition of the chamber is preferably 1 Pa or less.

[0047] According to another embodiment of the present invention, a tungsten film of a semiconductor element manufactured by a tungsten film forming method including the following steps a) to c),

[0048] a) A first deposition step of depositing a tungsten film using magnetron sputtering with a power density of less than 0.5 W / cm on the semiconductor substrate, 2 and a second deposition step of depositing a tungsten film using magnetron sputtering with a power density of less than 0.5 W / cm on the semiconductor substrate,

[0049] b) performing an RF bias treatment in an inert gas atmosphere to modify the surface of the deposited tungsten;

[0050] c) a second deposition step of additionally depositing a tungsten film using magnetron sputtering with a power density of 0.5 W / cm 2 or more on the deposited tungsten film;

[0051] There is provided a tungsten film of a semiconductor device having a tungsten film quality in which the ratio of particles having a particle size of 0.12 μm or more is 50% or more.

[0052] The process of manufacturing the tungsten film of the semiconductor device is substantially the same as the process described in detail above, and is different from the existing process that only performs the second deposition step. In the manufactured tungsten film, the ratio of particles having a particle size of 0.12 μm or more may be 50% or more. On the contrary, in the existing process that only performs the second deposition step, the ratio of particles having particles of 0.12 μm or more is only about 9%, showing a significant difference in tungsten film quality (FIG. 6).

[0053] At the same time, as shown in FIG. 7, it can be seen that the tungsten film manufactured according to an embodiment of the present invention has a 110 Peak Shift compared to the existing process, which means that the distance between the crystal grains in the film is different, resulting in tensile stress in the film. In addition, compared with the existing process, the number of crystal particles showing (110) orientation increases, and a tungsten film with a ratio of 50% or more can be obtained. As a result, it can be seen that the effect of improved specific resistance is shown (FIG. 8).

[0054] Hereinafter, the present invention will be described in more detail by way of embodiments. The following embodiments are described for the purpose of exemplifying the present invention, and the scope of the present invention is not limited thereto.

[0055] <Embodiment>

[0056] 1. Tungsten Film Deposition Method for Semiconductor Devices

[0057] - Embodiment 1

[0058] 1) First Deposition Step of Tungsten (W)

[0059] Using the test equipment of ULVAC ENTRON#1, film deposition was carried out based on a physical vapor deposition (PVD) sputtering system.

[0060] SiO 2 On the semiconductor substrate, 0.4 kW of DC power and RF biasing were simultaneously applied, and a tungsten film with a thickness of 0.5 nm was deposited at a low power density (less than 0.5 W / cm 2 ).

[0061] 2) RF Biasing Treatment Step

[0062] An inert gas was supplied into the chamber, and only 50 W to 200 W of RF power was applied to the stage for 5 seconds without applying DC power to form an inert gas plasma. Then, RF biasing treatment was performed on the manufactured tungsten film.

[0063] 3) Second Deposition Step of Tungsten (W)

[0064] 1.2 kW of DC power and RF biasing were applied on the RF-biased tungsten film, and an additional tungsten film with a thickness of about 38 nm was deposited at a high power density (0.5 W / cm 2 or more), and finally a tungsten film with a thickness of 38.52 nm was manufactured.

[0065] - Embodiments 2 to 3 (Change in the Number of Times of the First Deposition)

[0066] Except for performing the first tungsten deposition process and the RF biasing process twice (Embodiment 2) and four times (Embodiment 3), a tungsten film was produced in the same manner as in Embodiment 1, and as a result, tungsten films having thicknesses of 38.13 nm and 37.74 nm were obtained, respectively.

[0067] - Comparative Example 1 (Normal Deposition)

[0068] SiO- 2 On the substrate, the first tungsten (W) deposition process and the RF biasing process of Embodiment 1 were not performed, and only the second deposition process was performed using 1.2 kW of DC power. As a result, a tungsten film having a total thickness of 38.8 nm was obtained.

[0069] - Comparative Example 2

[0070] SiO- 2 On the substrate, the RF biasing process of Embodiment 1 was not performed, and only the first and second tungsten (W) deposition processes were performed. As a result, a tungsten film having a total thickness of 37.3 nm was obtained.

[0071] - Comparative Examples 3 to 5 (Change in the number of times of performing the first deposition)

[0072] Except for performing the first tungsten deposition process and the RF biasing process five times (Comparative Example 3), eight times (Comparative Example 4), and twelve times (Comparative Example 5), a tungsten film was produced in the same manner as in Embodiment 1. As a result, tungsten films having thicknesses of 38.2 nm, 38.39 nm, and 37.70 nm were obtained, respectively.

[0073] The resistivity of each tungsten film produced through Embodiments 1 to 3 and Comparative Examples 1 to 5 was measured and shown in Table 1 and FIG. 3 below.

[0074]

Table 1

[0075] 2. Specific Resistance Measurement Results for Each DC Power

[0076] - Embodiment 4 (DC Power in the First Deposition Step < DC Power in the Second Deposition Step)

[0077] Except for varying the process time in the second deposition step of tungsten (W) and obtaining a tungsten film with a final thickness of 50.16 nm, the first deposition step, RF biasing treatment step, and second deposition step were carried out in the same manner as in Embodiment 3. As a result, a tungsten film having a specific resistance of 8.47 μΩcm was manufactured.

[0078] - Embodiment 5 (DC Power in the First Deposition Step = DC Power in the Second Deposition Step)

[0079] Except for using a DC power of 1.2 kW in the first deposition step of tungsten (W), a tungsten film was manufactured in the same manner as in Embodiment 4. As a result, a tungsten film with a thickness of 51.24 nm and a specific resistance of 9.71 μΩcm was obtained.

[0080] - Comparative Example 6 (DC Power in the First Deposition Step > DC Power in the Second Deposition Step)

[0081] Except for using a DC power of 1.6 kW in the first deposition step of tungsten (W), a tungsten film was manufactured in the same manner as in Embodiment 4. As a result, a tungsten film with a thickness of 53.96 nm and a specific resistance of 10.02 μΩcm was obtained.

[0082] - Comparative Example 7 (Normal Deposition)

[0083] As compared with Embodiments 4, 5, and Comparative Example 6, SiO - 2On the substrate, without performing the first tungsten (W) deposition process and the RF biasing process, only the second deposition process was performed using 1.2 kW of DC power to obtain a tungsten film with a total thickness of 50.14 nm. As a result of measuring the specific resistance of the tungsten film, it showed 10.18 μΩcm.

[0084] The power size and specific resistance of each tungsten film manufactured through the above-described Embodiments 4 to 5 and Comparative Examples 6 to 7 were compared and shown in Table 2 and FIG. 5 below.

[0085]

Table 2

[0086] 3. Analysis of change in specific resistance for each film thickness per one time of the first deposition step

[0087] The film thickness per one time of deposition in the first deposition step was made different for each 0.1 nm, 0.3 nm, 0.4 nm, 0.5 nm, 0.6 nm, 0.9 nm, and 1.0 nm. The first deposition step was repeated 4 times in the same manner as in Embodiment 3. After performing the RF Bias process, the second deposition step was performed to form a tungsten film.

[0088] The specific resistance was measured and organized as shown in Table 3 below.

[0089]

Table 3

[0090] Therefore, it can be seen that when the thickness of the tungsten film formed through the first deposition step is less than 0.3 nm or exceeds 0.6 nm, the specific resistance of the formed tungsten film increases.

[0091] 4. Analysis of particle size and orientation

[0092] - Grain size and portion analysis for each size (FIG. 6)

[0093] For the tungsten films formed by the existing process (Comparative Example 1) and the improved process (Embodiment 3) according to an embodiment of the present invention, using a high-resolution field emission scanning transmission microscope (FESEM) JSM-IT800 device, analyzing the diffraction pattern of backscattered electrons, and analyzing the orientation of crystal grains in the test piece, which is one method of EBSD (Electron Back Scatter Diffraction ) measurement and analysis were performed. The surface Grain size was calculated via the EBSD, and the portion for each Grain size was shown (Figure 6).

[0094] As a result, in the tungsten film (existing process) manufactured by Comparative Example 1, the ratio of particles having a particle size of 0.12 μm or more is only about 9%, while in the tungsten film (improved process) manufactured by Embodiment 3, it can be seen that the ratio of particles having a particle size of 0.12 μm or more shows 51.9%.

[0095] -XRD (X-ray diffraction) measurement and analysis (Figure 7 and Table 4)

[0096] To analyze the characteristics of crystalline substances, XRD (X-ray diffraction) analysis was performed on the tungsten films formed by the existing process (Comparative Example 1) and the improved processes (Embodiments 2 and 3) according to an embodiment of the present invention using an XRD Rigaku SmartLab (9kW) device (Figure 7).

[0097] As a result, it can be seen that the position of the W(110) Peak of the tungsten films manufactured by Embodiments 2 and 3 is shifted compared to the tungsten film manufactured by Comparative Example 1, and thus it can be seen that there is a change in stress.

[0098]

Table 4

[0099] -Calculation of Grain orientation and ratio of tungsten film (Fig. 8)

[0100] For the tungsten films formed by the existing process (Comparative Example 1) and the improved process (Embodiment 3) according to an embodiment of the present invention, EBSD measurement and analysis were performed in the same manner as in FIG. 6. Through the EBSD, the orientation and the ratio of the orientation of the Grains were calculated, and at the same time, an increase in the Grain size was observed (Fig. 8).

[0101] As a result, in the tungsten film (existing process) manufactured according to Comparative Example 1, the ratio of the particles having the (110) orientation is 46.24%, while in the tungsten film formed according to Embodiment 3, the ratio of the particles having the (110) orientation is 54.30%. It can be seen that the improved process has an approximately 8% increase in the (110) orientation compared to the existing process, and it can also be seen that the Grain size is even larger in the improved process (Embodiment 3).

[0102] As described above, the embodiments of the present invention have been described in detail with reference to the drawings. However, the present invention is not limited to the above-described embodiments, and those having ordinary knowledge in the technical field can apply various technical modifications and deformations based on the above. For example, the described technology may be executed in an order different from the described method, and / or the described components may be combined or combined in a form different from the described method, or may be replaced or substituted by other components or equivalents, and appropriate results can be achieved.

[0103] Therefore, other realizations, other embodiments, and those equivalent to the scope of the claims, etc. also belong to the scope of the claims described below.

Claims

1. As a method for forming a tungsten (W) film of a semiconductor device using a physical vapor deposition (PVD) sputtering method on a semiconductor substrate, a) A first deposition step of depositing a tungsten film using magnetron sputtering with a power density of less than 0.5 W / cm ２ on the semiconductor substrate; b) performing an RF bias treatment in an atmosphere of an inert gas to modify the surface of the deposited tungsten; c) A second deposition step of additionally depositing a tungsten film using magnetron sputtering with a power density of 0.5 W / cm ２ or higher on the deposited tungsten film; A method for forming a tungsten film of a semiconductor device, comprising the steps of:

2. The method for forming a tungsten film of a semiconductor device according to claim 1, wherein the thickness of the tungsten film deposited in step a) is 0.3 to 0.6 nm.

3. The method for forming a tungsten film of a semiconductor device according to claim 1, wherein steps a) and b) are performed 1 to 4 times before step c).

4. The method for forming a tungsten film of a semiconductor device according to claim 3, wherein the thickness of the tungsten film deposited through steps a) and b) is 0.3 to 2.4 nm.

5. The method for forming a tungsten film of a semiconductor device according to claim 1, wherein the DC power applied in step a) is smaller than or the same as the DC power applied in step c).

6. The method for forming a tungsten film of a semiconductor device according to claim 1, wherein the DC power applied in step a) is less than 1.0 kW, and the DC power applied in step c) is 1.0 kW or more and less than 3.0 kW.

7. The method for forming a tungsten film of a semiconductor device according to claim 1, wherein the inert gas in step b) contains one or more selected from the group consisting of Ar, Kr, Ne, and Xe.

8. The method for forming a tungsten film of a semiconductor device according to claim 1, wherein the RF bias treatment in step b) is performed at 50 W to 200 W for 2 to 10 seconds.

9. The method for forming a tungsten film of a semiconductor device according to claim 1, wherein no DC power is applied in step b), and only RF bias is applied for plasma treatment.

10. The method for forming a tungsten film of a semiconductor device according to claim 1, wherein the method for forming a tungsten film of the semiconductor device is performed in a physical vapor deposition (PVD) chamber of 1 Pa or less.

11. A tungsten film of a semiconductor device manufactured by a tungsten film forming method including the following steps a) to c), a) A first deposition step of depositing a tungsten film using magnetron sputtering with a power density of less than 0.5 W / cm ２ on the semiconductor substrate; b) performing an RF bias treatment in an inert gas atmosphere to modify the surface of the deposited tungsten; c) A second deposition step of additionally depositing a tungsten film using magnetron sputtering with a power density of 0.5 W / cm ２ or more on the vapor-deposited tungsten film; A tungsten film of a semiconductor device, having a tungsten film quality with a particle size of 0.12 μm or more and a ratio of particles of 50% or more.

12. The tungsten film of the semiconductor device according to claim 11, wherein the ratio of crystal particles having a (110) orientation is 50% or more.

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