In-situ integrated wafer parameter detection system

Abstract

A method and system for continuously and real-time monitoring of wafer processing results. In some embodiments, the system can comprise at least one non-active chamber having at least one feed-through access port configured to interact with a measurement device. The feed-through access port has a surface covered with a fluorine-based coating that is exposed to the internal volume of the non-active chamber. The non-active chamber has a wafer access port to one or more other chambers. The measurement device is positioned outside the non-active chamber and is oriented to detect measurement data through one of the feed-through access ports. A data collection device is connected to the measurement device and is configured to continuously receive data from the measurement device.

Description

Technical Field

[0001] Embodiments of the present principle generally relate to semiconductor processing of semiconductor substrates.

Background Art

[0002] During wafer processing, important parameters may unintentionally change. To prevent parameter changes, wafers are often tested after processing using a stand-alone measurement system. However, interrupting to perform the test adds significant delays and reduces wafer processing throughput. Stand-alone measurement systems can accurately determine that a parameter is out of a predetermined tolerance or specification, but the timing of the information typically occurs after one or more lots of wafers have been processed. If a wafer becomes unusable due to a parameter outside the tolerance, that wafer is discarded or scrapped. Wafer loss can be extremely costly due to the amount of wafer processing and semiconductor structures up to that point. The inventors have realized that by accurately and more timely evaluating wafers, the research and development time of the experimental plan can be shortened, the initial startup time to production can be accelerated, the recovery time from maintenance events can be improved, wafer loss can be significantly reduced, the wafer yield can be dramatically improved, and the cost per wafer can be reduced.

[0003] Accordingly, the inventors have provided methods and apparatuses for accurately and early detecting wafer parameters and reducing waste and costs during wafer processing.

Summary of the Invention

Problems to be Solved by the Invention

[0004] This specification provides methods, apparatuses, and systems for providing multi-channel in-situ measurement of wafer parameters.

Means for Solving the Problems

[0005] In some embodiments, a system for monitoring wafer processing results includes at least one non-active chamber having at least one feed-through access port, where the feed-through access port is configured to interact with a measurement device, at least one feed-through access port has a surface covered with a fluorine-based coating that is exposed to the internal volume of the at least one non-active chamber, the at least one non-active chamber has a wafer access port to one or more other chambers, at least one non-active chamber; a measurement device positioned outside the at least one non-active chamber and oriented to detect measurement data through one of the at least one feed-through access ports; and a data collection device connected to the measurement device and configured to continuously receive data from the measurement device.

[0006] In some embodiments, the system is a cleaning device connected to at least one cleaning port proximate to one of the at least one measurement devices, configured to inject radicals from a remote plasma source into at least one non-active chamber through one of the at least one cleaning ports to clean a fluorine-based coating covering a surface, configured to supply fluorine or oxygen gas-based radicals into at least one non-active chamber, interconnected to a data collection device, and configured to perform cleaning when there is a defect in data from one of the at least one measurement devices; wherein one of the at least one feed-through access ports is a viewport, the viewport is formed from a quartz material, the measurement device includes one or more of a reflectometer, an ellipsometer, and a micro-Raman spectrometer; a measurement process device interconnected to one or more wafer process chambers, configured to receive data from the data collection device, and including a trained measurement model configured to change at least one wafer process of one or more wafer process chambers based on the data; and the system can further include the cleaning device and the measurement process device; the fluorine-based coating is a metal fluoride-based coating or a non-metal fluorine-based coating; and / or at least one non-active chamber is a transfer chamber, a load lock chamber, or a via chamber.

[0007] In some embodiments, a system for monitoring wafer processing results includes an inactive chamber having a plurality of feed-through access ports, each of the plurality of feed-through access ports configured to interact with one of a plurality of measurement devices, the inactive chamber having a surface covered with a fluorine-based coating exposed to the internal volume of the inactive chamber, the inactive chamber having a wafer access port to one or more other chambers, an inactive chamber; a plurality of measurement devices positioned outside the inactive chamber and oriented to detect measurement data through one of the feed-through access ports; a multi-channel data collection device connected to the plurality of measurement devices and configured to continuously receive data from the plurality of measurement devices; a cleaning device connected to a plurality of cleaning ports, each of the plurality of cleaning ports being proximate to one of the plurality of measurement devices, the cleaning device being configured to inject radicals into the inactive chamber from a remote plasma source through at least one of the plurality of cleaning ports to clean the fluorine-based coating covering the surface; and a measurement process device interconnected with one or more wafer process chambers, the measurement process device being configured to receive data from the multi-channel data collection device and including a trained measurement model configured to change at least one wafer process of one or more of the wafer process chambers based on the data.

[0008] In some embodiments, the system is configured such that the cleaning device supplies fluorine or oxygen gas-based radicals into the non-active chamber, the cleaning device is interconnected to a multi-channel data collection device, and is configured to perform cleaning when there are defects in the data from one or more of the plurality of measurement devices, at least one of the feed-through access ports is a viewport, the viewport is formed from a quartz material, the plurality of measurement devices can include one or more of a reflectometer, an ellipsometer, and a micro-Raman spectrometer, the fluorine-based coating is a metal fluoride-based coating or a non-metal fluorine-based coating, and / or the non-active chamber can further include the case where it is a transfer chamber, a load lock chamber, or a via chamber.

[0009] In some embodiments, a method for monitoring wafer processing results is to continuously receive data from a plurality of measurement devices connected to a non-active chamber via a feed-through port into the non-active chamber, where the feed-through port has a surface coated with a fluorine-based coating that is exposed to the internal volume of the non-active chamber, receiving, determining whether the wafer parameters are out of specification, inputting the data into a trained machine learning model for determining measures to correct the out-of-specification wafer parameters to be within specification, and transmitting a command for changing the process to the process chamber based on the measures determined by the trained machine learning model.

[0010] In some embodiments, the method can further include cleaning a surface having a fluorine-based coating using radicals generated by a remote plasma source when data from at least one of the plurality of measurement devices transmits defective data.

[0011] Other and further embodiments are disclosed below.

[0012] Embodiments of the present principle, briefly summarized above and described in more detail below, can be understood by reference to the exemplary embodiments of the principle shown in the accompanying drawings. However, the accompanying drawings show only typical embodiments of the present principle and should not be considered as limiting the scope, as the present principle can accept other equally effective embodiments.

Brief Description of the Drawings

[0013]

Figure 1

Figure 2

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Figure 6

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Figure 8

Modes for Carrying Out the Invention

[0014] For ease of understanding, where possible, the same reference numbers are used to denote identical elements common to the figures. The figures are not drawn to scale and may be simplified for clarity. Elements and features of one embodiment may be beneficially incorporated into other embodiments without further elaboration.

[0015] Methods, apparatuses, and systems detect and measure wafer parameters before and / or after wafer processing to provide a solution for preventing out-of-specification wafers. For example, using this principle, attached to one or more viewport windows of an inactive chamber such as a transfer chamber, via chamber, and / or load lock chamber of a semiconductor process mainframe, for example but not limited to, a reflectometer and / or ellipsometer can be used to measure profile thickness, film stress, etc. after film deposition. The inactive chamber may be a permanent component such as an integrated tool and / or a portable inactive chamber that moves between other chambers to transport wafers in a controlled environment. This principle has the advantage of providing an accurate and low-cost process for in-situ detection of wafer parameters before and / or after wafer processing without requiring costly and time-consuming modifications to existing semiconductor processing systems.

[0016] This principle can be used to detect many wafer parameters before and / or after processing, such as thickness, stress, temperature, material composition, cooling rate, and / or gas release rate. For the sake of brevity, wafer parameters such as thickness may be used as exemplary parameters, but this principle is not intended to be limited to the detection and evaluation of only the thickness parameter. During wafer processing, it can be seen that tracking the deposition thickness is extremely important for the performance of the semiconductor structure. The detection of film thickness drift needs to be determined as quickly and accurately as possible after the deposition process is completed so that corrective measures can be taken. If film thickness drift continues for a number of wafers and is left unattended, the entire lot may have to be scrapped, which can seriously affect the wafer yield and the cost of the semiconductor process.

[0017] Manufacturers currently do not have an accurate method to measure the film thickness inside the integration tool (see, e.g., FIG. 6). Most film thickness measurements are performed after a number of wafers have been processed, and thus, the wafer lot is measured with dedicated measuring equipment outside the integration tool. In stark contrast, the principles disclosed herein can quickly scrutinize and measure wafer parameters, such as film profile thickness, by using, for example, existing chamber viewports located at the top or bottom of the non-active chamber. As will be described in more detail below, by using and modifying the viewport, the apparatus and system of the present principles can be easily retrofitted into existing semiconductor processing configurations, such as integrated semiconductor processing tools, without limitation. The present principles are compatible with the use of metrology systems that use, for example, reflectometers, ellipsometers, and / or micro-Raman spectrometers. By using the viewport of the non-active chamber, wafer parameters can be detected without degrading the wafer environment within the non-active chamber. In some embodiments, a cleaning method, apparatus, and / or system can be incorporated to ensure that the viewport is not blocked by fog or particulates generated from the wafer inside the non-active chamber. In some embodiments, at least the inner surface of the viewport material (e.g., quartz, etc.) is coated with a strengthening coating to reduce formations on the viewport material that affect the detection / measurement of wafer parameters.

[0018] FIG. 1 shows a top view of an in-situ multi-channel wafer parameter monitoring system 100 according to some embodiments. The in-situ multi-channel wafer parameter monitoring system 100 can include a first measurement device 108A located on a first non-active chamber such as a transfer chamber 102, and a second measurement device 108B on a second non-active chamber such as a load lock chamber 106. As used herein, a “non-active chamber” is a chamber in which no active deposition or etching of the wafer is performed, for example, without limitation, a transfer chamber, a load lock chamber, and / or a via / pass-through chamber (e.g., interconnecting a mainframe / integration tool, etc.), or any chamber in which a wafer may be placed. The wafer may be cooled or gas may be released in the non-active chamber. In some embodiments, the active chamber may include a deposition and / or etching process of the wafer. An “active chamber” or process chamber, as used herein, is a chamber that performs a process of altering the wafer, altering the structure on the wafer, and / or altering the film on the wafer, such as a plasma vapor deposition (PVD) chamber, a chemical vapor deposition (CVD) chamber, an atomic layer deposition (ALD) chamber, an etching chamber, an annealing chamber, etc. The exemplary system of FIG. 1 includes only two measurement devices for simplicity of explanation, but any number of measurement devices may be used. In some embodiments, the non-active chamber may include an intermediate transfer chamber that maintains the wafer temperature, maintains the environment (e.g., vacuum pressure, humidity level, etc.), performs gas impregnation of the wafer, and / or degassing of the wafer, and does not perform any active deposition or etching of the wafer.

[0019] The first measuring device 108A is positioned on a feed-through access port or viewport window existing above the first wafer position 112A. The second measuring device 108B is positioned on a feed-through access port or viewport window existing above the second wafer position 112B. The first measuring device 108A communicates with the multi-channel data collection device 114 via the first data channel 140. The second measuring device 108B communicates with the multi-channel data collection device 114 via the second data channel 142. The transfer chamber 102 can transfer wafers to and from the load lock chamber 106, and can also transfer wafers to and from the first process chamber 104A, the second process chamber 104B, and the third process chamber 104C. The wafer to be processed passes through the first wafer position 112A before and / or after being processed in any of the three process chambers, thereby enabling collection of wafer parameter data before and / or after each of the three processes is executed.

[0020] In some embodiments, the wafer parameter data from the first data channel 140 and the second data channel 142 may be stored in the data storage 116 by the multi-channel data collection device 114. The data storage 116 may be local to the multi-channel data collection device 114 and / or may be remote to the multi-channel data collection device 114, such as, for example, on a remote server. The multi-channel data collection device 114 can receive data continuously in real time and can respond in real time if the data deviates from acceptable parameters for a particular process. In some embodiments, the multi-channel data collection device 114 can further analyze the data to determine whether corrective action is necessary. For example, if the data indicates that a parameter such as thickness has drifted beyond an acceptable level across several wafers, the multi-channel data collection device 114 can send a stop or halt command to abort the processing of the wafer lot. The corrective action may be sent directly to a particular process chamber, or directly to the mainframe (integration tool), and / or indirectly via the system controller 124. The system controller 124 generally includes a central processing unit (CPU) 126, a memory 128, and support circuitry 130. The CPU 126 may be any form of general-purpose computer processor that can be used in an industrial environment. The support circuitry 130 is conventionally coupled to the CPU 126 and can include a cache, a clock circuit, an input / output subsystem, a power supply, and the like. Software routines, such as the methods described below (see, for example, FIG. 7), may be stored in the memory 128 and, when executed by the CPU 126, can convert the CPU 126 into a special-purpose computer (system controller) 124. The software routines can also be stored and / or executed by a second controller (not shown) located remotely.

[0021] In some embodiments, an optional process analyzer 118 can be utilized to further analyze data received directly from the multi-channel data collection device 114 and / or from the data storage 116. Using the optional process analyzer 118, data can be analyzed using a model trained with training data, thereby detecting out-of-specification parameters using inference and / or modifying the wafer process to return the wafer specifications to an acceptable level. The optional process analyzer 118 can communicate with the multi-channel data collection device 114, the data storage 116, and / or the system controller 124. In some embodiments, the cleaning device 120 can be used to purge and / or actively clean particulate matter or fog generated by environmental contamination in the non-active chamber from the feed-through port or viewport window, such as when a wafer releases gas after being processed in the process chamber. The wafer naturally releases gas as it cools after the high process temperatures used during processing. Gas release can cause clouding, making it impossible for the metrology device to "see" the wafer and / or reducing visibility to a level where errors occur in the readings taken by the metrology device. If the clouding and / or particle accumulation is large enough, the metrology device may read the accumulation on the viewport rather than the wafer.

[0022] The cleaning device 120 can include a remote plasma source 144 that receives one or more cleaning gases from the gas supply 122 to generate radicals and then delivers those radicals, for example, to the first cleaning port 110A of the transfer chamber 102 and / or the second cleaning port 110B of the load lock chamber 106 to clean the respective viewports for the metrology device. In some embodiments, the gas is nitrogen trifluoride (NF that dissociates by plasma to form fluorine radicals. 3) It may be a gas. The fluorine radical cleans and removes deposits on the viewport (feed-through port) of any type of wafer gas release or measurement device from the chamber. The cleaning may be performed, for example, periodically, after a specific process is executed, after several wafers are processed, and / or continuously. In some embodiments, the cleaning device 120 can communicate with the multi-channel data collection device 114, the system controller 124, and / or the optional process analyzer 118. Therefore, the cleaning device 120 is based on the input data to the multi-channel data collection device 114 (data of the viewport that is no longer received / blocked, intermittent data, incomplete data, etc.) and / or data analyzed by the optional process analyzer 118 (data whose integrity cannot be verified, data that appears to be damaged, data beyond extreme limits, etc.). The cleaning device 120 may also be controlled by the system controller 124 based on data and / or processing parameters, process strategies, profiles, etc. Each cleaning port may be controlled simultaneously or individually as needed.

[0023] In some embodiments, the in-situ multi-channel wafer parameter monitoring system 100 may be extended to include multiple mainframes or integrated tools. In FIG. 2, the in-situ multi-channel wafer parameter monitoring system 200 has a multi-channel data collection device 214 that communicates with a first plurality of measurement devices 208A on a first mainframe 202A and a second plurality of measurement devices 208B on a second mainframe 202B. The first mainframe 202A has a first plurality of cleaning ports 210A in fluid communication with a first cleaning device 220A, and the second mainframe 202B has a second plurality of cleaning ports 210B in fluid communication with a second cleaning device 220B. In some embodiments, the first plurality of cleaning ports 210A and the second plurality of cleaning ports 210B may be in fluid communication with a single cleaning device.

[0024] In the example of FIG. 2, the multi-channel data collection device 214 has six data channels per main frame. However, the multi-channel data collection device 214 can have any number of data channels connected to any number of main frames. The data obtained from each main frame can be used to determine when to stop the process or when a correction is needed. The multi-channel data collection device 214 can monitor each channel and perform comparisons between channels as well as between main frames. For example, without limitation, if the wafer process executed in the first main frame 202A is a pre-stage of the wafer process executed in the second main frame, the wafer lot being processed can be monitored, and the processing parameters can be adjusted or changed based on the data obtained from both main frames to maintain the desired wafer parameters. Similarly, redundant main frames can be used to improve the wafer processing throughput, and the data from each main frame can be compared to ensure that the wafer is within specifications and that each similar chamber is operating to produce the same wafer parameter level.

[0025] The above in-situ multi-channel wafer parameter monitoring system is compatible with the layouts of different types of non-active chambers. In FIG. 3, the top view 300 shows the design of the main frame with a square transfer chamber 302 surrounded by three sides by process chambers 304A to 304F. On the fourth side, there are two load lock chambers 306A and 306B. The transfer chamber 302 has four wafer positions 312A to 312D that can be used to monitor wafers before and / or after processing in the process chambers 304A to 304F. The measuring devices 308A to 308D are positioned at the feed-through ports above each of the four wafer positions 312A to 312D. In the vicinity of the measuring devices 308A to 308D, four cleaning ports 310A to 310D are also shown to enable cleaning of the feed-through ports of each of the measuring devices 308A to 308D. In each of the load lock chambers 306A and 306B, there are also measuring devices 308E and 308F and cleaning ports 310E and 310F above each of the two wafer positions 312E and 312F, respectively.

[0026] In FIG. 4, the top view 400 shows the design of a main frame with a hexagonal transfer chamber 402 whose four sides are surrounded by process chambers 404A - 404D. There are two load lock chambers 406A, 406B on the fifth and sixth sides. The transfer chamber 402 has four wafer positions 412A - 412D that can be used to monitor wafers before and / or after processing in the process chambers 404A - 404D. Measuring devices 408A - 408D are positioned at feed - through ports above each of the four wafer positions 412A - 412D. Near the measuring devices 408A - 408D, four cleaning ports 410A - 410D are also shown to enable cleaning of the feed - through ports of each of the measuring devices 408A - 408D. Above each of the two wafer positions 412E, 412F in each of the load lock chambers 406A, 406B, there are measuring devices 408E, 408F and cleaning ports 410E, 410F respectively. The examples shown in FIGS. 3 and 4 are intended to demonstrate the flexibility of the present principle. The type and / or shape of the non - active chambers are not intended to be limiting.

[0027] FIG. 5 shows a cross-sectional view 500A and a top view 500B of a measurement device 508 attached to the top of an inactive chamber 502. In some embodiments, the measurement device 508 can include, but is not limited to, a measurement system 534 such as a reflectometer, an ellipsometer, and / or a micro-Raman spectrometer. In the example of FIG. 5, the measurement system 534 is in communication 536 with a multi-channel data collection device 514, but the multi-channel data collection device 514 may also be in communication with other devices such as an analysis device and / or a system controller (see, for example, FIGS. 1 and 2). The measurement device 508 is positioned via a feed-through port 542 (such as a viewport, etc.) with the wafer position 512 under the measurement device 508 via a carrier 532 after and / or before wafer processing in the process chamber, thereby covering the measurement range of the wafer 530 (such as indicated by the field of view 546 of the measurement system 534). In some embodiments, the feed-through port 542 shown in the top view 500B of FIG. 5 may have a larger surface area than the measurement device 508. In some embodiments, the feed-through port 542 may have the same surface area as the measurement device 508, or may be smaller than the measurement device 508.

[0028] The material of the feed-through port 542 (e.g., quartz, etc.) is coated with a fluorine-based coating layer 544. In some embodiments, the material of the feed-through port 542 can be modified / changed to enable enhancement of measurement data such as for a specific type of measuring device (e.g., filtering a specific wavelength, etc.). The fluorine-based coating layer 544 is transparent and, in some embodiments, has the following characteristics, namely, functions as an antireflection coating (ARC) that enhances the capture of measurement data of the measurement system by improving the transmittance specific to the wavelength / range, ensuring highly reliable and high-speed data acquisition, functions as an antifouling coating that prevents surface / window fogging due to gas release or volatile contaminants, and / or has a function of highly resisting damage by cleaning gases or cleaning radicals generated by the cleaning system 520 of the measuring device 508. In some embodiments, the fluorine-based coating layer 544 may be a metal fluoride coating layer such as magnesium fluoride, aluminum fluoride, yttrium fluoride, calcium fluoride, and / or lanthanum fluoride, but is not limited thereto. In some embodiments, the fluorine-based coating layer 544 is fluorine-doped or alloyed quartz or silica, or SiO x F y coating, or fluorine-doped or alloyed boron nitride, or BN x F y coating, or a non-metallic fluorine coating layer such as any combination thereof, but is not limited thereto.

[0029] The cleaning system 520 generates radicals via remote plasma and is fluidly connected to an inactive chamber 502 proximate to the measurement device 508 via a cleaning tube 538 and a cleaning port 510. The cleaning port 510 can also include one or more optional cleaning nozzles 540 that can be directed toward the feed-through port 542 of the measurement device 508. In some embodiments, the cleaning port 510 is within a distance 548 (see top view 500B of FIG. 5) of 5 centimeters from the feed-through port 542. In some embodiments, the cleaning port 510 is within 2 centimeters (distance 548) from the feed-through port 542. In some embodiments, two or more cleaning ports can be used for each measurement device to enhance the cleaning of the feed-through port and the fluorine-based coating layer. In some embodiments, a single cleaning port can be used to clean multiple feed-through ports and fluorine-based coating layers. For example, the cleaning port can have multiple cleaning nozzles for directing cleaning radicals / gases from a single cleaning port to each feed-through port.

[0030] FIG. 6 shows a cross-sectional view 600A and a bottom view 600B of an in-situ measurement device attached to the bottom of a non-active chamber, according to some embodiments. The in-situ measurement device attached to the bottom can be used in conjunction with a backside deposition system or the like. In some embodiments, the measurement device 608 can include, but is not limited to, a measurement system 634 such as a reflectometer, an ellipsometer, and / or a micro-Raman spectrometer. In the example of FIG. 6, the measurement system 634 is in communication 636 with a multi-channel data collection device 614, but the multi-channel data collection device 614 may also be in communication with other devices such as an analysis device and / or a system controller (see, for example, FIGS. 1 and 2). The measurement device 608 is positioned via a feed-through port 642 (e.g., a viewport or the like) with the wafer position 612 above the measurement device 608 via a substrate holder 632, after and / or before wafer processing in the process chamber, thereby covering the measurement range of the wafer 630 (e.g., as indicated by the field of view 646 of the measurement system 634). In some embodiments, the feed-through port 642 shown in the bottom view 600B of FIG. 6 may have a larger surface area than the measurement device 608. In some embodiments, the feed-through port 642 may have the same surface area as the measurement device 608, or may be smaller than the measurement device 608.

[0031] The material of the feed-through port 642 (e.g., quartz, etc.) is coated with a fluorine-based coating layer 644. In some embodiments, the material of the feed-through port 642 can be modified / changed to enable enhancement of measurement data (e.g., filtering a specific wavelength, etc.) of a specific type of measurement device. The fluorine-based coating layer 644 is transparent and, in some embodiments, has the following characteristics, namely, a function as an antireflection coating (ARC) that enhances the capture of measurement data of the measurement system by improving the transmittance specific to a wavelength / range, ensuring highly reliable and high-speed data acquisition, a function as an antifouling coating that prevents surface / window fogging due to gas release or volatile contaminants, and / or a function of being highly resistant to damage by cleaning gas or cleaning radicals generated by the cleaning system 620 of the measurement device 608. In some embodiments, the fluorine-based coating layer 644 may be a metal fluoride coating layer such as magnesium fluoride, aluminum fluoride, yttrium fluoride, calcium fluoride, and / or lanthanum fluoride, but is not limited thereto. In some embodiments, the fluorine-based coating layer 644 may be fluorine-doped or alloyed quartz or silica, or SiO x F y coating, or fluorine-doped or alloyed boron nitride, or BN x F y coating, or a non-metallic fluorine coating layer such as any combination thereof, but is not limited thereto.

[0032] The cleaning system 620 generates radicals via remote plasma and is fluidly connected to an inactive chamber 602 proximate to the measurement device 608 via a cleaning tube 638 and a cleaning port 610. The cleaning port 610 can also include one or more optional cleaning nozzles 640 that can be directed towards the feed-through port 642 of the measurement device 608. In some embodiments, the cleaning port 610 is within a distance 648 (see bottom view 600B of FIG. 6) of 6 centimeters from the feed-through port 642. In some embodiments, the cleaning port 610 is within 2 centimeters (distance 648) from the feed-through port 642. In some embodiments, two or more cleaning ports can be used for each measurement device to enhance the cleaning of the feed-through port and the fluorine-based coating layer. In some embodiments, a single cleaning port can be used to clean multiple feed-through ports and fluorine-based coating layers. For example, the cleaning port can have multiple cleaning nozzles for directing cleaning radicals / gases from a single cleaning port to each feed-through port.

[0033] The apparatuses and systems of the present principle described above may be retrofitted into the design of a cluster tool, e.g., an integration tool 700 (i.e., a mainframe or cluster tool) described later with respect to FIG. 7, or may be integrated in other ways. The integration tool 700 includes a vacuum-tight processing platform 701, a factory interface 704, and a system controller 702. The processing platform 701 includes a plurality of processing chambers such as 714A, 713B, 714C, 714D, 714E, and 714F operatively coupled to vacuum substrate transfer chambers (transfer chambers 703A, 703B where the measurement devices of the present principle can be installed). The factory interface 704 is operatively coupled to the transfer chamber 703A by one or more load lock chambers (two load lock chambers such as 706A and 706B shown in FIG. 7).

[0034] In some embodiments, the factory interface 704 includes at least one docking station 707 and at least one factory interface robot 738 to facilitate the transfer of semiconductor substrates. The docking station 707 is configured to receive one or more front-opening unified pods (FOUPs). In the embodiment of FIG. 7, four FOUPs such as 705A, 705B, 705C, and 705D are shown. The factory interface robot 738 is configured to transfer substrates from the factory interface 704 to the processing platform 701 through load lock chambers such as 706A and 706B. Each of the load lock chambers 706A and 706B has a first port coupled to the factory interface 704 and a second port coupled to the transfer chamber 703A. The load lock chambers 706A and 706B are coupled to a pressure control system (not shown), which pumps down and vents the load lock chambers 706A and 706B to facilitate passing substrates between the vacuum environment of the transfer chamber 703A and the substantially ambient (e.g., atmospheric) environment of the factory interface 704. The transfer chambers 703A, 703B each have vacuum robots 742A, 742B disposed therein. The vacuum robot 742A can transfer the substrate 721 between the load lock chambers 706A, 706B, the processing chambers 714A and 714F, and the cooling station 740 or the pre-cleaning station 742. The vacuum robot 742B can transfer the substrate 721 between the cooling station 740 or the pre-cleaning station 742 and the processing chambers 714B, 714C, 714D, and 714E.

[0035] In some embodiments, processing chambers 714A, 714B, 714C, 714D, 714E, and 714F are coupled to transfer chambers 703A, 703B. The processing chambers 714A, 714B, 714C, 714D, 714E, and 714F can comprise, for example, atomic layer deposition (ALD) process chambers, physical vapor deposition (PVD) process chambers, chemical vapor deposition (CVD) chambers, annealing chambers, and the like. In some embodiments, one or more optional service chambers (shown as 716A and 716B) may be coupled to transfer chamber 703A. Service chambers 716A and 716B may be configured to perform other substrate processes such as degassing, orientation, substrate metrology, cooling, and the like. System controller 702 controls the operation of tool 700 using direct control of process chambers 714A, 714B, 714C, 714D, 714E, and 714F or, alternatively, by controlling a computer (or controller) associated with process chambers 714A, 714B, 714C, 714D, 714E, and 714F and tool 700. In operation, system controller 702 enables optimization of the performance of tool 700 through data collection and feedback from the respective chambers and the system. System controller 702 generally includes a central processing unit (CPU) 730, memory 734, and support circuitry 732. CPU 730 may be any form of general-purpose computer processor that can be used in an industrial environment. Support circuitry 732 is conventionally coupled to CPU 730 and can comprise a cache, clock circuits, input / output subsystems, power supplies, and the like. Software routines, such as the methods described above, stored in memory 734 and executed by CPU 730 can transform CPU 730 into a special-purpose computer (system controller) 702. The software routines can also be stored and / or executed by a second controller (not shown) located remotely from tool 700.

[0036] FIG. 8 is a method 800 for preventing out-of-tolerance or out-of-spec wafer parameters using an in-situ measurement device in a non-active chamber. During wafer processing, the process may generate out-of-spec wafers due to thickness drift, stress, deviation of processing hardware, and / or other factors. In block 802, data from a plurality of measurement devices in one or more non-active chambers is continuously received by a multi-channel data collection device. In some embodiments, the multi-channel data collection device collects, processes, and stores the data. In block 804, the data is checked to confirm whether the measurement device is reporting the data correctly. If not reported correctly, in block 806, an optional cleaning process may be invoked to clean the feed-through port of that particular measurement device. The cleaning can continue until the data reported by the measurement device is reported correctly. In some embodiments, the cleaning process may be invoked periodically to ensure that the data reported by the measurement device is correct. In block 808, the multi-channel data collection device processes the data in real time to determine whether the wafer process is within specification. The data integrity check and processing may include inter-channel data comparison between a single platform (e.g., see FIG. 1) and / or between multiple platforms (e.g., see FIG. 2).

[0037] In some embodiments, the multi-channel data collection device may employ an optional process analyzer that uses a trained machine learning model to assist in processing the data to determine whether the data is within specifications for a given wafer process. At block 810, the multi-channel data collection device and / or the optional process analyzer and model determine what corrective actions are needed based on the processed data results. Corrective actions may include, for example, but are not limited to, adjusting the process, such as adjusting the process strategy or profile, stopping the wafer processing, and / or notifying the user, such as by sounding an audible or visual alarm. At block 812, the corrective actions are executed. The multi-channel data collection device and / or the optional process analyzer and / or model communicate directly or indirectly with the user or the process chamber and issue commands or instructions so that the corrective actions determined based on the processed data results are actively executed, preventing further waste and yield degradation.

[0038] Embodiments in accordance with the present principles may be implemented in hardware, firmware, software, or any combination thereof. Embodiments may also be implemented as instructions stored on one or more computer-readable media, readable and executable by one or more processors. A computer-readable medium can include any mechanism for storing or transmitting information in a form readable by a machine (e.g., a computing platform, or a "virtual machine" operating on one or more computing platforms). For example, a computer-readable medium can include any suitable form of volatile or non-volatile memory. In some embodiments, the computer-readable medium can include non-transitory computer-readable media.

[0039] While the foregoing is directed to embodiments of the present principles, other and further embodiments of the present principles may be devised without departing from the basic scope thereof.

Claims

1. At least one non-active chamber having at least one feed-through access port, wherein the feed-through access port is configured to interact with a measuring device, the at least one feed-through access port has a surface covered with a fluorine-based coating that is exposed to the internal volume of the at least one non-active chamber, and the at least one non-active chamber has a wafer access port to one or more other chambers, at least one non-active chamber; The measuring instrument positioned outside the at least one non-active chamber and oriented to detect measurement data through one of the at least one feed-through access ports; A data collection device connected to the measuring device and configured to continuously receive data from the measuring device A system for monitoring wafer processing results comprising.

2. Further comprising a cleaning device connected to at least one cleaning port, one of the at least one cleaning ports being proximate to the measuring device, the cleaning device being configured to inject radicals from a remote plasma source into the at least one non-active chamber through one of the at least one cleaning ports to clean the fluorine-based coating covering the surface, the system according to claim 1.

3. The system according to claim 2, wherein the cleaning device is configured to supply fluorine or oxygen gas-based radicals into the at least one non-active chamber.

4. The system according to claim 2, wherein the cleaning device is interconnected with the data collection device and is configured to perform cleaning when there is a defect in the data from the measuring device.

5. The system according to claim 1, wherein one of the at least one feed-through access ports is a viewport.

6. The system according to claim 5, wherein the viewport is formed from a quartz material.

7. The system according to claim 1, wherein the measuring device includes one or more of a reflectometer, an ellipsometer, and a micro-Raman spectrometer.

8. The system according to claim 1, further comprising a measurement process device interconnected with one or more wafer process chambers, wherein the measurement process device is configured to receive the data from the data collection device and includes a trained measurement model configured to change at least one wafer process of the one or more wafer process chambers based on the data.

9. The system according to claim 1, wherein the fluorine-based coating is a metal fluoride-based coating or a non-metal fluorine-based coating.

10. The system according to claim 1, wherein the at least one non-active chamber is a transfer chamber, a load lock chamber, or a via chamber.

11. A non-active chamber having a plurality of feed-through access ports, each of the plurality of feed-through access ports being configured to interact with one of a plurality of measurement devices, having a surface covered with a fluorine-based coating exposed to the internal volume of the non-active chamber, the non-active chamber having a wafer access port to one or more other chambers, a non-active chamber; Each of the plurality of measurement devices positioned outside the non-active chamber and oriented to detect measurement data through one of the feed-through access ports; A multi-channel data collection device connected to the plurality of measurement devices and configured to continuously receive data from the plurality of measurement devices; A cleaning device connected to a plurality of cleaning ports, each of the plurality of cleaning ports being proximate to one of the plurality of measurement devices, the cleaning device being configured to inject radicals into the non-active chamber from a remote plasma source through at least one of the plurality of cleaning ports to clean the fluorine-based coating covering the surface, a cleaning device; A measurement process device interconnected with one or more wafer process chambers, configured to receive the data from the multi-channel data collection device, and including a trained measurement model configured to change at least one wafer process of the one or more wafer process chambers based on the data, a measurement process device; A system for monitoring wafer processing results, comprising.

12. The system according to claim 11, wherein the cleaning device is configured to supply fluorine or oxygen gas-based radicals into the non-active chamber.

13. The system according to claim 11, wherein the cleaning device is interconnected to the multi-channel data collection device and is configured to perform cleaning when there are defects in the data from one or more of the plurality of measurement devices.

14. The system according to claim 11, wherein at least one of the feed-through access ports is a viewport.

15. The system according to claim 14, wherein the viewport is formed of a quartz material.

16. The system according to claim 11, wherein the plurality of measurement devices can include one or more of a reflectometer, an ellipsometer, and a micro-Raman spectrometer.

17. The system according to claim 11, wherein the fluorine-based coating is a metal fluoride-based coating or a non-metal fluorine-based coating.

18. The system according to claim 11, wherein the non-active chamber is a transfer chamber, a load lock chamber, or a via chamber.

19. Continuously receiving data from a plurality of measurement devices connected to the non-active chamber via a feed-through port into the non-active chamber, wherein the feed-through port has a surface coated with a fluorine-based coating that is exposed to the internal volume of the non-active chamber; Determining whether the wafer parameters are out of specification; Inputting the data into a trained machine learning model for determining measures to correct the wafer process and bring out-of-specification wafer parameters within specification; Sending a command for changing the process to the process chamber based on the measures determined by the trained machine learning model A method for monitoring wafer processing results, including.

20. When data with defects is transmitted from at least one of the plurality of measurement devices, cleaning the surface having the fluorine-based coating using radicals generated by a remote plasma source The method according to claim 19, further comprising.

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