Clamping jig, inspection apparatus, method, and system for wafer-level aging inspection

Abstract

Relating to the technical field of wafer inspection, it is a clamping jig, inspection apparatus, method and system for wafer-level aging inspection. The wafer-level aging inspection apparatus includes a clamping jig for wafer-level aging inspection and a lifting mechanism. The clamping jig for wafer-level aging inspection includes a cover plate assembly, a lower sealing assembly, a heat sink, and a heating device. The heat sink is used for placing the wafer. The cover plate assembly includes a first PCB substrate and a micro-positioner for inspection probes connected to the first PCB substrate. The lower sealing assembly includes a lower sealing cover. The lower sealing cover is connected to the cover plate assembly to form an inspection chamber. The heat sink and the heating device are located in the inspection chamber, and the heating device is located between the lower sealing cover and the heat sink. The lifting mechanism is provided to expand and contract vertically under control. The lifting mechanism movably abuts against the clamping jig for wafer-level aging inspection, thereby moving the lower sealing assembly upward in conjunction to connect to the cover plate assembly to form an inspection chamber.

Description

Technical Field

[0001] The present invention relates to the technical field of wafer inspection, and particularly to a clamp jig for wafer-level aging inspection, a wafer-level aging inspection apparatus, an inspection method, and an inspection system.

Background Art

[0002] In the field of wafer-level aging inspection, it is necessary to place the wafer in a sealed inspection chamber for high-pressure and high-temperature inspection. In the prior art, generally, a PCB substrate is directly connected to a lower sealing cover to form a sealed inspection chamber, and then high-pressure and high-temperature inspection is performed on the wafer in the lower sealing cover. The technical solution for performing high-temperature and high-pressure inspection on the wafer in the lower sealing cover is generally to drive the PCB substrate and the lower sealing cover to descend together to a position where they cooperate with a heating device, thereby performing high-temperature inspection on the wafer in the lower sealing cover. Such an embodiment does not cause the PCB substrate to receive too much pressure. However, in the process of inspecting an 8-inch wafer, due to the large size of the wafer, it is easily bent and deformed in a high-temperature and high-pressure inspection environment, which affects the high-temperature and high-pressure inspection results of the wafer. In addition, a large pressure is required to tighten the chamber for an 8-inch wafer, and the wafer may be damaged if it is not firmly pressed. Since the 8-inch wafer has a large area in the wafer-level aging inspection process, it is easily bent and deformed in a high-temperature and high-pressure environment, which affects the results of the wafer-level aging inspection. Therefore, it is necessary to use a more effective fixing method. For example, a fixing method in which the PCB substrate is separated from the lower sealing cover and pressed up and down to be adhered is used to press and adhere the wafer to avoid the wafer being bent and deformed. However, this method has not been seen in the prior art. In this method, during the process of pressing and adhering, if the PCB substrate receives too much pressure and is deformed, the contact between the inspection probe and the wafer may become weak or poor in contact, resulting in inspection errors.

[0003] Currently, a probe is used to connect a PCB board to an external inspection device. Such a connection method is a rigid connection, and there is a demand for higher levels of position and structure on the PCB board and the external inspection device. There is a high structural correlation between the external inspection device and the clamp fixture, the position is fixed, the installation and maintenance are complex, and there is a lack of flexibility in the structure and layout. Also, in the circuit, there are multiple contact points of the probe with the PCB board. The service life of the probe is limited. If any of the probes is damaged, it will affect the connection of the PCB board to the external inspection device, and thus directly affect the service life of the PCB board and the external inspection device, reducing reliability and stability. The clamp fixture contacts the contact point on the surface of the clamp fixture by one end of the probe, and the other end of the probe is directly connected to the external inspection device. Therefore, high precision is required for the processing and installation of the related structure, the size of the related structure is limited, the size of the wafer that the clamp fixture can accommodate is small, and the number of power supply channels is small.

[0004] In addition, in the wafer-level aging inspection process, generally, it is necessary to perform power supply inspection and heating inspection on the wafer, thereby inspecting the wafer-level aging characteristics of the wafer. However, for the heating inspection, a heating device is used to heat the wafer to a high temperature, thereby inspecting the high-temperature resistance characteristics of the wafer. In the prior art, generally, the heating device is provided at the bottom of the lower sealing cover assembly, and the lower sealing cover assembly is heated by a plurality of heating sheets, thereby performing a high-temperature inspection on the wafer in the lower sealing cover assembly. However, the method of heating with a plurality of heating sheets results in non-uniform heating of the wafer, and since the heating device is located outside the lower sealing cover assembly, the heat transfer rate is low, which affects the inspection efficiency of the wafer.

Summary of the Invention

[0005] The first object of the first aspect of the present invention is to provide a wafer-level aging inspection device in which the wafer does not bend in a high-temperature and high-pressure inspection environment.

[0006] The second objective of the first aspect of the present invention is to improve the wafer aging inspection accuracy of a wafer-level aging inspection apparatus.

[0007] The third objective of the first aspect of the present invention is to optimize the structure of a wafer-level aging inspection apparatus.

[0008] The first objective of the second aspect of the present invention is to provide a wafer-level aging inspection system including the above-mentioned wafer-level aging inspection apparatus.

[0009] The first objective of the third aspect of the present invention is to provide an inspection method used for the above-mentioned wafer-level aging inspection apparatus.

[0010] The first objective of the fourth aspect of the present invention is to provide a clamp jig for wafer-level aging inspection, thereby solving the technical problem that the number of power supply channels to the wafer is small in the prior art using the probe connection method.

[0011] The second objective of the fourth aspect of the present invention is to avoid expansion and deformation during heating of the inspection probe micropositioner and connection parts.

[0012] The third objective of the fourth aspect of the present invention is to avoid damage to the PCB substrate when the pressing adhesion force in the inspection chamber is too large.

[0013] The first objective of the fifth aspect of the present invention is to provide a clamp jig for wafer-level aging inspection, thereby solving the technical problem that the heating of the wafer is non-uniform when performing a high-temperature aging inspection on the wafer in the prior art.

[0014] The second objective of the fifth aspect of the present invention is to simplify the structure of the heating device.

[0015] The third object of the fifth aspect of the present invention is to rationally set the position of the ceramic plate to avoid damaging the wafer when the heating device directly contacts the wafer.

[0016] In particular, according to the first aspect of the present invention, It includes a cover plate assembly, a lower seal assembly, a heat sink, and a heating device. The heat sink is used for placing the wafer. The cover plate assembly includes a first PCB board and a micro-positioner for inspection probes connected to the first PCB board. The lower seal assembly includes a lower seal cover. The lower seal cover is connected to the cover plate assembly to form an inspection chamber. The heat sink and the heating device are located in the inspection chamber, and the heating device is located between the lower seal cover and the heat sink, and a clamp jig for wafer-level aging inspection, a lifting mechanism provided to expand and contract vertically under control, which movably abuts against the clamp jig for wafer-level aging inspection, thereby interlocking the lower seal assembly to move upward and connect to the cover plate assembly to form the inspection chamber. A wafer-level aging inspection device is provided.

[0017] Optionally, the wafer-level aging inspection device includes an upper plate assembly and a bottom plate assembly. The upper plate assembly and the bottom plate assembly are connected by columns. The clamp jig for wafer-level aging inspection is provided below the upper plate assembly and connected to the upper plate assembly. The lifting mechanism includes a mounting bracket attached to the bottom plate assembly and a floating mechanism provided on the upper plate assembly. The floating mechanism is provided to float when the cover plate assembly is pressed by the lower seal cover, thereby avoiding deformation of the cover plate assembly.

[0018] In particular, according to the second aspect of the present invention, there is further provided a wafer-level aging inspection system, the wafer-level aging inspection system including a loading / unloading device, at least one inspection device, and at least one of the above-mentioned wafer-level aging inspection apparatuses, The loading / unloading device is used to place a wafer into the corresponding wafer-level aging inspection apparatus for performing wafer-level aging inspection, Any of the wafer-level aging inspection apparatuses is connected to the corresponding inspection device to perform wafer-level aging inspection.

[0019] In particular, according to the third aspect of the present invention, there is further provided After the loading of the wafer is completed, controlling the lifting mechanism to rise to a first height, whereby the lifting mechanism is connected to the lower sealing assembly; Controlling the lifting mechanism to continuously lift the lower sealing assembly in conjunction to a second height, whereby the lower sealing assembly moves until it is connected to the cover plate assembly to form an inspection chamber; Powering the heating device, the heat sink, and the micro-positioner for inspection probes included in the cover plate assembly, thereby performing wafer-level aging inspection on the wafer. There is provided an inspection method for use in the above-mentioned wafer-level aging inspection apparatus, including these steps.

[0020] In particular, according to the fourth aspect of the present invention, there is further provided a clamping jig for wafer-level aging inspection including a cover plate assembly and a lower sealing assembly, the cover plate assembly being connected to the lower sealing assembly to form an inspection chamber for accommodating a wafer.

[0021] Optionally, the cover plate assembly is a PCB substrate including a first region and a second region, wherein the first region and the second region are located on different sides of the PCB substrate respectively, and any of the first contacts provided in the first region is electrically connected to a corresponding second contact provided in the second region; a micropositioner for inspection probes located at the bottom of the PCB substrate and connected to the PCB substrate, having a plurality of inspection probes, one end of each of the inspection probes contacting a corresponding one of the first contacts and the other end contacting a wafer, thereby performing a wafer-level aging inspection on the wafer; and at least one connector attached to the second region of the PCB substrate, each of which is connected to a corresponding one of the second contacts, and each of the connectors is connected to an external inspection device by a wire harness, and the connector is used for performing a wafer-level aging inspection on the wafer.

[0022] Optionally, the clamping fixture for wafer-level aging inspection further includes a heat sink for placing the wafer and a heating device, the heat sink and the heating device are located in the inspection chamber, the heat sink is stacked above the heating device, the heating device is electrically connected to an electrical assembly located below the lower sealing assembly, and the heating device is a film heater layer having a resistance wire arranged uniformly and at least one power supply port connected to the resistance wire, provided on a side of the heat sink away from the wafer, and heating the wafer by the heat sink; and a connection assembly including at least one set of first connection probe sets passing through the lower sealing cover assembly, one end of each of the first connection probe sets contacting a corresponding one of the power supply ports and the other end passing through the lower sealing assembly and contacting the electrical assembly, thereby feeding power to and heating the film heater layer by the electrical assembly.

[0023] According to the embodiments of some examples of the present invention, a heating device is provided inside the lower sealing cover, and the wafer is placed on the heat sink. By using a lifting mechanism that can expand and contract vertically, the lower sealing assembly is moved upward in conjunction to be connected to the cover plate assembly to form an inspection chamber. The heat sink is firmly applied, and on a flat heat sink, the wafer is also flat and does not bend. The wafer can be pressed and adhered to avoid being damaged.

[0024] Furthermore, the lifting mechanism of the present invention includes a lifting assembly and an electrical assembly. After the lifting mechanism moves upward until the lower sealing assembly is connected to the cover plate assembly in conjunction, the electrical assembly of the lifting mechanism is used to supply power to the heating device and the heat sink inside the inspection chamber. That is, the lifting mechanism not only realizes lifting to press and adhere the wafer, but also realizes supplying power to the heating device and the heat sink, thereby optimizing the structure of the wafer-level aging inspection device.

[0025] According to the embodiments of some other examples of the present invention, a floating mechanism is provided on the upper plate assembly of the mounting bracket. The floating mechanism is provided to float when the cover plate assembly is pressed by the lower sealing cover, so that the cover plate assembly can avoid being deformed under pressure, ensure that the inspection probe on the cover plate assembly contacts the wafer, and improve the stability of the contact, thereby improving the accuracy of the wafer-level aging inspection.

[0026] Furthermore, in the present invention, during the process of the lifting mechanism ascending and descending, the pads at the top of the second PCB board of the electrical assembly cooperate with the lower sealing cover to supply power to the heating device and the heat sink, thereby realizing the high-pressure and high-temperature inspection of the wafer. That is, the lifting mechanism not only realizes lifting to press and adhere the wafer, but also realizes providing the conditions for inspecting the wafer inside the lower sealing cover, thereby optimizing the structure of the wafer-level aging inspection device.

[0027] According to the embodiments of some further examples of the present invention, by newly installing a connector in the second region of the PCB substrate and connecting the connector to an external inspection device using a wire harness, the conventional method of connection using probes is cancelled, that is, a rigid connection is replaced with a flexible connection. As a result, the relative positions of the wafer-level aging inspection clamp fixture and the external inspection device can be set flexibly respectively, and the number of channels for supplying power to the wafer can be increased. Also, when connecting to an external inspection device using probes, there are many contact points and the reliability of the circuit connection is low. However, the present invention uses a wire harness for connection and there are no contact points, thus improving the reliability of the circuit connection.

[0028] Furthermore, at least one groove is provided at the edge of the micro-positioner for the inspection probe of the present invention, and at least one positioning post is provided at the support part of the connecting component. Each positioning post is arranged corresponding to one groove, thereby positioning the micro-positioner for the inspection probe. The cooperation of the positioning post and the groove limits the position of the micro-positioner for the inspection probe. The groove is not closed, and the positioning post only contacts the two sides of the groove along the circumferential direction of the micro-positioner. When the micro-positioner for the inspection probe and the connecting component expand due to heating, the positioning post can slide slightly along the radial direction of the micro-positioner for the inspection probe in the groove and does not press against the groove, so the stress when the micro-positioner for the inspection probe and the connecting component expand is eliminated, and deformation of the micro-positioner for the inspection probe and the connecting component can be avoided.

[0029] Furthermore, the present invention provides a load-bearing column passing through the PCB substrate. One end of the load-bearing column is connected to the upper sealing cover located at the top of the PCB substrate, and the other end protrudes from the bottom surface of the PCB substrate. When the pressing adhesion force in the inspection chamber is too large and the lower sealing cover is too close to the PCB substrate, the load-bearing column contacts the lower sealing cover prior to the PCB substrate, receiving the pressing adhesion force of the inspection chamber, thereby preventing the PCB substrate from being damaged by excessive pressure.

[0030] According to still some embodiments of the present invention, the heating device of the wafer-level aging inspection clamping fixture includes a film heater layer and a connection assembly. The film heater layer has a resistance wire uniformly arranged thereon and at least one power supply port connected to the resistance wire. The film heater layer is provided on the side of the heat sink away from the wafer, heating the wafer by the heat sink. The connection assembly includes at least one set of first connection probe sets passing through the lower sealing assembly. One end of each of the first connection probe sets contacts the corresponding power supply port, and the other end passes through the lower sealing assembly and contacts the electrical assembly, thereby supplying power to the film heater layer by the electrical assembly, and thus the film heater layer heats the wafer on the heat sink. The above technical solution uses a film heater layer with a uniformly arranged resistance wire, canceling the technical solution of the prior art using multiple heating sheets, thereby making the heating of the wafer uniform and avoiding local overheating of the wafer. Also, compared with the prior art embodiment of providing the heating device inside the lower sealing cover assembly, that is, integrating the lower sealing cover assembly and the heating device and providing a secondary structure to bring the lower sealing cover assembly into contact with the heating device, the structure of the wafer-level aging inspection device is simplified, and the heating efficiency of the heating device for the wafer is improved, thereby improving the inspection efficiency of the wafer.

[0031] Furthermore, the film heater layer of the heating device of the present invention has a resistance wire uniformly arranged thereon and at least one power supply port connected to the resistance wire. The first connection probe set is directly connected to the resistance wire by the power supply port, thereby realizing uniform heating of the film heater layer, avoiding providing a plurality of probe assemblies corresponding to a plurality of heating sheets, and simplifying the structure of the heating device.

[0032] Furthermore, the heating device of the present invention further includes a ceramic plate, which is located between the second heat insulation component and the heat sink, and is used to transfer the heat generated in the film heater layer to the heat sink to avoid damaging the wafer when the heating device is in direct contact with the wafer, thereby reducing the defect rate of the wafer in the wafer-level aging inspection process.

[0033] From the detailed description of the specific embodiments of the present invention with reference to the following drawings, the above and other objects, advantages, and features of the present invention will become clearer to those skilled in the art.

Brief Description of the Drawings

[0034] Some specific embodiments of the present invention will be described in detail below in an exemplary and non-limiting manner with reference to the drawings. In the figures, the same reference numerals represent the same or similar parts or portions. It should be understood by those skilled in the art that these figures are not necessarily drawn to scale. Here,

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Embodiments for Carrying Out the Invention

[0035] Examples of the present invention are described in detail below, and examples of the examples are shown in the figures. Throughout, the same or similar parts or parts having the same or similar functions are represented by the same or similar reference numerals. The examples described with reference to the following drawings are exemplary and provided for the purpose of explaining the present invention and should not be construed as limiting the present invention.

[0036] In the description of the present invention, the directions or positional relationships indicated by terms such as "upper" and "lower" are based on the directions or positional relationships shown in the drawings for the purpose of simplifying the description of the present invention. It should be understood that the device or part in question is not necessarily provided or configured and operated in a specific direction, and thus should not be construed as a limitation on the present invention.

[0037] The terms "first" and "second" are used only for the purpose of description and should not be construed as indicating relative importance or implicitly indicating the number of technical features in question. Thus, the features defined by "first" and "second" may explicitly or implicitly include at least one such feature, i.e., one or more such features. In the description of the present invention, the meaning of "a plurality" is at least two, for example, two, three, etc., unless specifically and clearly limited otherwise. When a feature "includes" one or some of the features covered thereby, this means that, unless otherwise specified, it does not exclude other features and may further include other features.

[0038] Unless there are particularly clear provisions and limitations, terms such as "connection" and "attach" are to be understood in a broad sense. Unless specifically limited, for example, it may be fixedly connected, removably connected, or integrated, and may be a mechanical connection, an electrical connection, a direct connection, or indirectly connected through an intermediate medium, or may be the internal communication between two components or the interaction between two components. Those skilled in the art will be able to understand the specific meaning of the above terms in the present invention according to the specific situation.

[0039] Unless otherwise limited, all terms (including technical terms and scientific terms) used in the description of this embodiment have the same meaning as the general understanding of those skilled in the art.

[0040] FIG. 1 is a schematic structural diagram of a wafer-level aging inspection apparatus 100A according to an embodiment of the present invention, and FIG. 2 is a schematic structural diagram of a cover plate assembly 70A in the wafer-level aging inspection apparatus 100A shown in FIG. 1. As shown in FIGS. 1 and 2, in this embodiment, the wafer-level aging inspection apparatus 100A includes a wafer-level aging inspection clamp jig 10A and a lifting mechanism 30A. The wafer-level aging inspection clamp jig 10A includes a cover plate assembly 70A, a lower sealing assembly, a heat sink 22A, and a heating device. The heat sink 22A is used for placing a wafer. The cover plate assembly 70A includes a first PCB board 11A and a micropositioner 12A for inspection probes connected to the first PCB board 11A. The lower sealing assembly includes a lower sealing cover 20A. The lower sealing cover 20A is connected to the cover plate assembly 70A to form an inspection chamber 21A. The heat sink 22A and the heating device are located in the inspection chamber 21A, and the heating device is located between the lower sealing cover 20A and the heat sink 22A. The lifting mechanism 30A is provided to expand and contract vertically under control. The lifting mechanism 30A is movably connected to the wafer-level aging inspection clamp jig 10A, thereby moving the lower sealing assembly upward in conjunction to connect it to the cover plate assembly 70A to form the inspection chamber 21A. Here, the micropositioner 12A for inspection probes has a plurality of inspection probes for inspecting a wafer. The lower sealing cover 20A is located below the wafer-level aging inspection clamp jig 10A. When the lower sealing cover 20A and the cover plate assembly 70A form the inspection chamber 21A, the micropositioner 12A for inspection probes is located in the inspection chamber 21A. Thereby, a plurality of inspection probes on the micropositioner 12A for inspection probes are connected to the wafer, thereby realizing a wafer-level aging inspection of the wafer.

[0041] In this embodiment, a heating device is provided inside the lower sealing cover 20A. By placing the wafer on the heat sink 22A and using the lifting mechanism 30A that can expand and contract vertically, the lower sealing assembly is moved upward in conjunction to be connected to the cover plate assembly to form the inspection chamber 21A. The wafer is firmly pressed against the flat heat sink 22A so that on the flat heat sink 22A, the wafer is also flat and does not bend, and the wafer can be pressed and adhered to avoid being damaged.

[0042] In this embodiment, the lifting mechanism 30A includes a lifting assembly 32A and an electrical assembly 31A. The electrical assembly 31A is provided at the free end of the lifting assembly 32A. The electrical assembly 31A is movably connected to the lower sealing assembly. The electrical assembly 31A supplies power to the heating device and the heat sink 22A, and is thus provided to perform wafer-level aging inspection on the wafer.

[0043] The lifting mechanism 30A of this embodiment includes a lifting assembly 32A and an electrical assembly 31A. After the lifting mechanism 30A moves the lower sealing assembly upward in conjunction and connects it to the cover plate assembly 70A, the electrical assembly 31A of the lifting mechanism 30A is used to supply power to the heating device and the heat sink 22A in the inspection chamber 21A. That is, the lifting mechanism 30A not only realizes lifting to press and adhere the wafer, but also realizes supplying power to the heating device and the heat sink 22A, thereby optimizing the structure of the wafer-level aging inspection device 100A.

[0044] In this embodiment, the lower sealing assembly further includes a sealing tape 211A provided at the uppermost part of the lower sealing cover 20A. The sealing tape 211A is used to seal the inspection chamber 21A.

[0045] FIG. 3 is a schematic cross-sectional view of the lower sealing cover 20A in the wafer-level aging inspection apparatus 100A shown in FIG. 1, and FIG. 4 is a schematic enlarged view of part A in FIG. 3. As shown in FIGS. 3 and 4, in this embodiment, the heating device includes a film heater layer 26A and at least one set of first connection probe sets 27A. However, the film heater layer 26A has a resistance wire 262A arranged uniformly and at least one power supply port 261A connected to the resistance wire 262A. The first connection probe sets 27A pass through the lower sealing cover 20A. One end of each first connection probe set 27A contacts one power supply port 261A, and the other end contacts the electrical assembly 31A. Thereby, the electrical assembly 31A supplies power to the film heater layer 26A, thereby heating the wafer on the heat sink 22A. Here, the film heater layer 26A may be a mica heating sheet or a ceramic heating sheet. The resistance wire 262A is provided between two mica film layers or ceramic film layers, and the resistance wire 262A is provided to be uniformly distributed in the extending plane. In this embodiment, the number of the first connection probes and the power supply port 261A is two, and the first connection probe set 27A includes a plurality of connection probes. In other embodiments, the number of the first connection probes and the power supply port 261A may be set based on specific design requirements.

[0046] In this embodiment, the heating device further includes a second heat insulation component 25A and a first heat insulation component 24A. Inside the inspection chamber 21A, from bottom to top, the second heat insulation component 25A, the first heat insulation component 24A, the film heater layer 26A, the ceramic plate 23A, and the heat sink 22A are sequentially provided. The film heater layer 26A is provided at the topmost part of the first heat insulation component 24A, that is, below the ceramic plate 23A. Here, the ceramic plate 23A has functions of heat transfer and insulation. The first connection probe set 27A sequentially passes through the lower sealing cover 20A, the second heat insulation component 25A, and the first heat insulation component 24A, and thereby contacts the power supply port 261A of the film heater layer 26A. In this embodiment, by providing the heating device inside the inspection chamber 21A, that is, integrating the lower sealing cover 20A and the heating device and providing a secondary structure to bring the lower sealing cover 20A into contact with the heating device, compared with the prior art embodiment, the structure of the wafer-level aging inspection device 100A is simplified, and the heating efficiency of the heating device for the wafer is improved, thereby improving the inspection efficiency of the wafer.

[0047] FIG. 5 is a schematic structural diagram of the lower sealing cover 20A in the wafer-level aging inspection apparatus 100A shown in FIG. 1, and FIG. 6 is a schematic structural diagram of the lifting mechanism 30A in the wafer-level aging inspection apparatus 100A shown in FIG. 1. As shown in FIGS. 5 and 6, in this embodiment, the electrical assembly 31A includes a second PCB substrate 311A. The second PCB substrate 311A is connected to an external circuit. At least one first pad position 33A is provided at the topmost part of the second PCB substrate 311A. Each first pad position 33A is arranged corresponding to one first connection probe set 27A. Thus, when contacting the first connection probe set 27A, the external circuit powers the heating device through the second PCB substrate 311A, thereby performing a heating inspection on the wafer. When the lifting assembly 32A of the lifting mechanism 30A moves the electrical assembly upward in conjunction and abuts against the lower sealing cover 20A, at this time, the first pad position 33A contacts the first connection probe set 27A, thereby realizing an electrical connection. Here, the number of the first pad positions 33A is two, and the second connection probe set 28A includes a plurality of connection probes. In other embodiments, the number of the first pad positions 33A may be set according to actual needs.

[0048] In this embodiment, at least one second connection probe set 28A that contacts the heat sink 22A is further penetrated through the lower sealing cover 20A. At least one second pad position 34A is further provided at the topmost part of the second PCB substrate 311A. Each second pad position 34A is arranged corresponding to one second connection probe set 28A. Thus, when contacting the second connection probe set 28A, the external circuit powers the heat sink 22A through the second PCB substrate 311A, thereby performing a power supply inspection on the wafer. In this embodiment, the second connection probe set 28A sequentially passes through the lower sealing cover 20A, the second heat insulation component 25A, the first heat insulation component 24A, and the ceramic plate 23A, thereby contacting the bottom of the heat sink 22A, thereby powering the heat sink 22A to realize a high-voltage inspection on the wafer. Here, a high-voltage inspection of about 2000V is performed on the wafer.

[0049] In this embodiment, a third connection probe set and at least one fourth connection probe set are further penetrated through the lower sealing cover 20A, a third pad position and at least one fourth pad position are further provided at the uppermost part of the second PCB substrate 311A, a groove for placing a first temperature sensor is provided at the bottom of the heat sink 22A, one end of the third connection probe set contacts the first temperature sensor, and the other end contacts the third pad position, thereby obtaining the temperature of the heat sink 22A. At least one second temperature sensor is provided in the film heater layer 26A, and the fourth connection probe set corresponds to one second temperature sensor and one fourth pad position, which may be understood as one end of the fourth connection probe set contacting the second temperature sensor and the other end contacting the fourth pad. In this embodiment, the number of the second temperature sensors is two, one of the two second temperature sensors is used to obtain the temperature of the film heater layer 26A, and the other is used for overheat protection.

[0050] FIG. 7 is a schematic structural view of the adapter plate 314A in the lifting mechanism 30A shown in FIG. 6. As shown in FIG. 7 and also referring to FIG. 6, in this embodiment, a plurality of first gas holes 29A are provided at the bottom of the lower sealing cover 20A, a plurality of second gas holes 312A are provided in the second PCB substrate 311A, each second gas hole 312A corresponds to one first gas hole 29A, the electrical assembly 31A further includes an adapter plate 314A, the adapter plate 314A is provided below the second PCB substrate 311A, the adapter plate 314A has a gas flow path 316A communicating with the plurality of second gas holes 312A, whereby the external gas passage is evacuated into the lower sealing cover 20A through the gas flow path 316A, the second gas holes 312A and the first gas holes 29A, thereby adsorbing the heat sink 22A and the wafer. In this embodiment, when it is necessary to adsorb the heat sink 22A, the first gas hole 29A of the lower sealing cover 20A communicates with the bottom of the heat sink 22A, that is, it is necessary to penetrate the ceramic plate 23A, otherwise the bottom of the heat sink 22A cannot be adsorbed. When it is necessary to adsorb the wafer, the first gas hole 29A needs to penetrate the heat sink 22A, whereby the adsorption of the wafer can be realized. The gas flow path 316A has a gas flow path connection port 317A, and the gas flow path connection port 317A is connected to the external gas passage by a joint.

[0051] In this embodiment, when performing wafer-level aging inspection on the wafer, it is necessary to fill nitrogen into the inspection chamber 21A. Specifically, nitrogen is filled into the inspection chamber 21A from the gas flow path 316A, the second gas holes 312A and the first gas holes 29A through the external gas passage. Nitrogen acts as a protective gas, thereby preventing high-voltage sparks of the wafer in the high-voltage inspection process.

[0052] In this embodiment, at the topmost part of the second PCB substrate 311A, a sealing assembly 313A for sealing when injecting gas into the first gas hole 29A and the second gas hole 312A is further provided, thereby avoiding gas leakage.

[0053] In this embodiment, the adapter plate 314A further includes an adapter probe set 318A, the electrical assembly 31A further includes a third PCB substrate 315A provided at the bottom of the adapter plate, and the third PCB substrate 315A is connected to the adapter probe set 318A and is also connected to an external circuit.

[0054] In this embodiment, the first PCB substrate 11A includes a first interface set 112A and a second interface set 111A, and the inspection probe micropositioner 12A includes a plurality of inspection probes. The first interface set 112A is provided on the first side of the first PCB substrate 11A facing the lower sealing assembly. One end of each inspection probe is connected to the corresponding first interface included in the first interface set 112A, and the other end is connected to the wafer, thereby performing wafer-level aging inspection on the wafer. The second interface set 111A may be provided on any second side of the first PCB substrate 11A other than the first side. The wafer-level aging inspection clamp fixture 10A further includes a plurality of connectors 14A. The plurality of connectors 14A are attached to the second side of the first PCB substrate 11A. Each connector 14A is connected to the corresponding second interface included in the second interface set 111A, and each connector 14A is connected to an external inspection device by a wire harness and is used to perform wafer-level aging inspection on the wafer.

[0055] In this embodiment, a heat dissipation assembly 13A is further provided between the first interface set 112A and the second interface set 111A of the first PCB substrate 11A, thereby blocking the heat generated by the first interface set 112A during the wafer-level aging inspection process and avoiding affecting the normal operation of the connector 14A.

[0056] In this embodiment, a new connector 14A is provided in the second interface set 111A, and a wire harness is used to connect the connector 14A to an external inspection device, thereby canceling the conventional method of connection using a probe. That is, a rigid connection is replaced with a flexible connection, whereby the relative positions of the wafer-level aging inspection clamp jig 10A and the external inspection device can be set flexibly, respectively, and the number of channels for supplying power to the wafer can be increased. Further, when connecting to an external inspection device using a probe, there are many contact points and the reliability of the circuit connection is low. However, in the present invention, a wire harness is used for connection and there are no contact points, thereby improving the reliability of the circuit connection.

[0057] In this embodiment, the wafer-level aging inspection device 100A further includes a mounting base 50A. The mounting base 50A includes a bottom plate assembly 51A, a support platform 55A, and a pair of first slide grooves 54A. The support platform 55A is used to support the lower sealing assembly. The pair of first slide grooves 54A are connected to the bottom plate assembly 51A. Each of the first slide grooves 54A extends along the horizontal direction. Both ends of the support platform 55A are slidably connected to the corresponding first slide grooves 54A, respectively. The lower sealing assembly is interlocked by the support platform 55A and moves along the extending direction of the first slide grooves 54A. When loading or unloading the wafer, the lower sealing assembly slides out to the outside of the mounting base 50A along the first slide grooves 54A. After the loading or unloading of the wafer is completed, the lower sealing assembly returns into the mounting base 50A along the first slide grooves 54A.

[0058] In this embodiment, the mounting base 50A further includes an upper plate assembly 53A and a pair of second slide grooves 40A. The upper plate assembly 53A is connected to the bottom plate assembly 51A by a plurality of support columns 52. The pair of second slide grooves 40A are connected to the upper plate assembly 53A. Each of the second slide grooves 40A extends along the horizontal direction. Both ends of the cover plate assembly 70A are slidably connected to the corresponding second slide grooves 40A respectively, so that the cover plate assembly 70A can be pulled out, thereby replacing the inspection probe micropositioner 12A. Also, the cover plate assembly 70A can be pulled out, and the corresponding wafer-level aging inspection clamp jig 10A for different types of wafers can be replaced, which is helpful for the replacement of the wafer-level aging inspection clamp jig 10A, and the convenience of the wafer-level aging inspection for the wafer is improved.

[0059] In this embodiment, the wafer-level aging inspection apparatus 100A further includes a photographing apparatus 60A. The photographing apparatus 60A is attached to the mounting base 50A and is used to detect whether the lower sealing cover 20A is connected to the cover plate assembly 70A to form the inspection chamber 21A.

[0060] FIG. 8 is a schematic configuration block diagram of a wafer-level aging inspection system according to an embodiment of the present invention. As shown in FIG. 8, in this embodiment, the wafer-level aging inspection system 1000A includes a loading / unloading device 200A, at least one inspection device 300A, and at least one of the above-described wafer-level aging inspection apparatuses 100A. The loading / unloading device 200A is used to place a wafer into the corresponding wafer-level aging inspection apparatus 100A to perform a wafer-level aging inspection. Each of the wafer-level aging inspection apparatuses 100A is connected to the corresponding inspection device to perform a wafer-level aging inspection.

[0061] FIG. 9 is a schematic process diagram of an inspection method used in a wafer-level aging inspection apparatus 100A according to an embodiment of the present invention. As shown in FIG. 9, the inspection method used in the wafer-level aging inspection apparatus 100A includes the following steps. Step S100, after the loading of the wafer is completed, the lifting mechanism 30A is controlled to rise to the first height, whereby the lifting mechanism 30A is connected to the lower sealing assembly. Step S200, the lifting mechanism 30A is controlled to continue to lift the lower sealing assembly in conjunction to the second height, whereby the lower sealing assembly moves until it is connected to the cover plate assembly 70A to form the inspection chamber 21A. Step S300, power is supplied to the heating device, the heat sink 22A, and the micropositioner 12A for the inspection probe included in the cover plate assembly 70A, whereby wafer-level aging inspection is performed on the wafer.

[0062] In this embodiment, the liftable lifting mechanism 30A is utilized to lift the lower sealing cover 20A in conjunction and connect it to the cover plate assembly 70A to form the inspection chamber 21A, and firmly apply it to the heat sink 22A. In the flat heat sink 22A, the wafer is also flat and does not bend, and the wafer is pressed and adhered to avoid breakage of the wafer.

[0063] In this embodiment, after step S300, it further includes the following steps. The lifting mechanism 30A is controlled to move downward, whereby the lower sealing assembly returns to its original position.

[0064] FIG. 10 is a schematic structural diagram of a wafer-level aging inspection apparatus 100B according to an embodiment of the present invention. FIG. 11 is a schematic cross-sectional view of a floating mechanism 60B and an upper plate assembly 11B in the wafer-level aging inspection apparatus 100B shown in FIG. 10. FIG. 12 is a schematic enlarged view of part A in FIG. 11. FIG. 13 is a schematic structural diagram of a lower cover plate 111B in the wafer-level aging inspection apparatus 100B shown in FIG. 10. As shown in FIGS. 10 to 13, in this embodiment, the wafer-level aging inspection apparatus 100B includes a mounting base 10B, a wafer-level aging inspection clamp jig, a lifting mechanism 40B, and a floating mechanism 60B. However, the mounting base 10B includes an upper plate assembly 11B and a bottom plate assembly 12B, and the upper plate assembly 11B and the bottom plate assembly 12B are connected by a support column 13B. The wafer-level aging inspection clamp jig is provided below the upper plate assembly 11B and is connected to the upper plate assembly 11B. The wafer-level aging inspection clamp jig includes a cover plate assembly 20B and a lower seal assembly. The lower seal assembly includes a lower seal cover 30B. The lower seal cover 30B is connected to the cover plate assembly 20B to form an inspection chamber for placing a wafer. The cover plate assembly 20B has a micropositioner 21B for inspection probes. The lifting mechanism 40B is attached to the bottom plate assembly 12B and is located below the lower seal cover 30B. The lifting mechanism 40B is provided to expand and contract vertically under control. The lifting mechanism 40B movably abuts against the wafer-level aging inspection clamp jig, thereby moving the lower seal assembly upward in conjunction to connect it to the cover plate assembly 20B to form an inspection chamber. The floating mechanism 60B is provided on the upper plate assembly 11B. The floating mechanism 60B is provided to float when the cover plate assembly 20B is pressed by the lower seal cover 30B, thereby avoiding deformation of the cover plate assembly 20B.

[0065] In this embodiment, a floating mechanism 60B is provided on the upper plate assembly 11B of the mounting base 10B. The floating mechanism 60B is provided to float when the cover plate assembly 20B is pressed by the lower sealing cover 30B. Thereby, the cover plate assembly 20B can be prevented from deforming under pressure, ensuring that the inspection probe on the cover plate assembly 20B contacts the wafer, improving the stability of the contact, and thereby improving the accuracy of the wafer-level aging inspection.

[0066] In this embodiment, the upper plate assembly 11B includes an upper cover plate 112B and a lower cover plate 111B. The lower cover plate 111B has a limiting groove 114B. The floating mechanism 60B includes a floating plate 61B and a telescopic assembly 63B. However, the floating plate 61B is provided at the top of the cover plate assembly 20B and is located in the limiting groove 114B. The floating plate 61B protrudes from the bottom of the lower cover plate 111B. The telescopic assembly 63B is connected to the upper cover plate 112B, and its bottom is connected to or abuts against the floating plate 61B. Thereby, when the floating plate 61B is pressed by the cover plate assembly 20B, it is compressed to move the floating plate 61B upward, thereby preventing the cover plate assembly 20B from deforming under pressure and affecting the aging inspection of the wafer.

[0067] In this embodiment, the cover plate assembly 20B includes a first PCB substrate 22B and a micro-positioner 21B for inspection probes, which is attached below the first PCB substrate 22B. This embodiment mainly prevents the first PCB substrate 22B from deforming under pressure. Since the first PCB substrate 22B is connected to the micro-positioner 21B for inspection probes and a plurality of inspection probes are provided on the micro-positioner 21B for inspection probes, by avoiding the deformation of the first PCB substrate 22B, it is possible to avoid the movement of the inspection probes and the occurrence of poor contact. In addition, the floating mechanism 60B provided in this embodiment can also prevent the inspection probes from being damaged by receiving too much force, and extends the service life of the inspection probes.

[0068] As shown in FIG. 12, the floating plate 61B is connected to the lower cover plate 111B and a gap is provided between the floating plate 61B and the upper cover plate 112B. When the floating plate 61B receives a large pressure, the floating plate 61B can move within this gap. That is, this gap is the movement stroke of the floating plate 61B, and the movement stroke of the floating plate 61B can be designed based on the design requirements.

[0069] In this embodiment, the floating plate 61B is circular and is arranged opposite to the micro-positioner 21B for inspection probes. When the lower sealing cover 30B moves upward and contacts the cover plate assembly 20B, it is necessary to seal the micro-positioner 21B for inspection probes within the lower sealing cover 30B. Therefore, it mainly abuts around the micro-positioner 21B for inspection probes, and the force applied to the cover plate assembly 20B is mainly near the micro-positioner 21B for inspection probes. Therefore, this embodiment arranges the floating plate 61B opposite to the micro-positioner 21B for inspection probes, thereby more surely avoiding the pressing of the first PCB substrate 22B and avoiding the deformation of the first PCB substrate 22B.

[0070] In a preferred embodiment, the size of the floating plate 61B is larger than the size of the micro-positioner 21B for inspection probes and smaller than the size of the lower sealing cover 30B. In other embodiments, the size of the floating plate 61B may be set based on specific design requirements. For example, it may be set to be larger than the size of the lower sealing cover 30B.

[0071] FIG. 14 is a schematic attachment view of the floating plate 61B and the lower cover plate 111B in the wafer-level aging inspection apparatus 100B shown in FIG. 10, and FIG. 15 is a schematic structural view of the upper cover plate 112B in the wafer-level aging inspection apparatus 100B shown in FIG. 10. As shown in FIGS. 14 and 15 and as also referred to in FIG. 12, in this embodiment, at least one first attachment groove 113B is provided at the bottom of the upper cover plate 112B, and at least one second attachment groove 62B is provided at the uppermost part of the floating plate 61B. Each second attachment groove 62B corresponds to one first attachment groove 113B. The telescopic assembly 63B includes at least one elastic component 631B, and each elastic component 631B is provided inside corresponding to one first attachment groove 113B and second attachment groove 62B. Here, each elastic component 631B is penetrated through a connecting rod 632B, and the connecting rod 632B is connected to the upper cover plate 112B.

[0072] In a preferred embodiment, the number of elastic components 631B is plural, and the plural elastic components 631B are uniformly arranged at the uppermost part of the floating plate 61B. The number of both the first attachment grooves 113B and the second attachment grooves 62B is plural. The plural first attachment grooves 113B are uniformly arranged at positions corresponding to the floating plate 61B, and the plural second attachment grooves 62B may be understood to be uniformly arranged on the floating plate 61B. Thereby, a force is uniformly applied to the first PCB substrate 22B of the cover plate assembly 20B, and local deformation of the first PCB substrate 22B is avoided.

[0073] In this embodiment, the mounting base 10B further includes a pair of slide grooves 70B. The slide grooves 70B are connected to the lower cover plate 111B, and any one of the slide grooves 70B extends along the horizontal direction. Both ends of the cover plate assembly 20B are slidably connected to the corresponding slide grooves 70B respectively. The cover plate assembly 20B can be taken out from the upper plate assembly 11B, and the corresponding cover plate assembly 20B can be replaced for different types of wafers, which is helpful for the replacement of the cover plate assembly 20B, improves the convenience of wafer-level aging inspection, and may also be understood to be helpful for the replacement of the micro-positioner for inspection probes on the cover plate assembly 20B.

[0074] In this embodiment, the wafer-level aging inspection device 100B further includes a photographing device 50B. The photographing device 50B is attached to the mounting base 10B and is used to detect whether the inspection chamber is formed when the lower sealing cover 30B abuts against the cover plate assembly 20B and the first PCB board 22B is connected.

[0075] FIG. 16 is a schematic structural diagram of the lifting mechanism in the wafer-level aging inspection device shown in FIG. 10. As shown in FIG. 16 and also with reference to FIG. 10, in this embodiment, the wafer-level aging inspection clamp fixture further includes a heat sink and a heating device. The heat sink and the heating device are located in the inspection chamber. The lifting mechanism 40B includes an electrical assembly 41B. The electrical assembly 41B includes a second PCB board 411B. The uppermost part of the second PCB board 411B has a pad position 412B for supplying power to the heat sink and the heating device, thereby performing wafer-level aging inspection on the wafer.

[0076] In this embodiment, the lifting mechanism 40B further includes a lifting assembly 42B connected to the electrical assembly 41B. The electrical assembly 41B is provided at the free end of the lifting assembly 42B. The lifting assembly 42B drives the electrical assembly 41B to move upward, so that the pad position 412B cooperates with the lower sealing cover 30B, drives the lower sealing cover 30B, and moves upward until it abuts and connects to the cover plate assembly 20B to form an inspection chamber.

[0077] In this embodiment, during the process of the lifting mechanism 40B lifting, the uppermost pad of the second PCB board 411B of the electrical assembly 41B cooperates with the lower sealing cover 30B to supply power to the heating device and the heat sink, thereby realizing the high-voltage and high-temperature inspection of the wafer. That is, the lifting mechanism 40B not only realizes lifting to press and adhere the wafer, but also realizes providing the conditions for inspecting the wafer within the lower sealing cover 30B, thereby optimizing the structure of the wafer-level aging inspection device 100B.

[0078] In this embodiment, the lifting assembly 42B includes a plurality of worm gear assemblies 422B and a motor 421B. The plurality of worm gear assemblies 422B are respectively connected to the electrical assembly 41B, and the motor 421B is connected to the plurality of worm gear assemblies 422B, thereby driving the plurality of worm gear assemblies 422B to drive the electrical assembly 41B to move up and down in conjunction. In other embodiments, as the lifting assembly 42B, other components, such as a cylinder, etc., may be used.

[0079] The present invention further provides a clamping fixture for wafer-level aging inspection. The clamping fixture for wafer-level aging inspection includes a cover plate assembly and a lower sealing assembly. The cover plate assembly is connected to the lower sealing assembly to form an inspection chamber for accommodating the wafer.

[0080] FIG. 17 is a schematic structural diagram of a clamp fixture 100C for wafer-level aging inspection according to an embodiment of the present invention, FIG. 18 is a schematic exploded view of the clamp fixture 100C for wafer-level aging inspection according to an embodiment of the present invention, FIG. 19 is a schematic positional diagram of the clamp fixture 100C for wafer-level aging inspection and an external inspection device 200C according to an embodiment of the present invention, and FIG. 20 is a schematic structural diagram of a PCB board 10C shown in FIG. 18. In some embodiments, as shown in FIGS. 17 to 20, the clamp fixture 100C for wafer-level aging inspection includes a cover plate assembly 110C and a lower seal assembly 120C, and the cover plate assembly 110C is connected to the lower seal assembly 120C to form an inspection chamber 121C for accommodating a wafer. The cover plate assembly 110C includes a PCB board 10C, a micro-positioner 20C for inspection probes, and at least one connector 30C. However, the PCB board 10C includes a first region 11C and a second region 12C, the first region 11C and the second region 12C are located on different sides of the PCB board 10C respectively, and any of the first contacts 13C provided in the first region 11C is electrically connected to a corresponding second contact 14C provided in the second region 12C. The micro-positioner 20C for inspection probes is located at the bottom of the PCB board 10C and is connected to the PCB board 10C. The micro-positioner 20C for inspection probes has a plurality of inspection probes 21C. One end of each of the inspection probes 21C contacts a corresponding first contact 13C, and the other end contacts the wafer, thereby performing a wafer-level aging inspection on the wafer. The connector 30C is attached to the second region 12C of the PCB board 10C. Any of the connectors 30C is connected to a corresponding second contact 14C, and any of the connectors 30C is connected to an external inspection device 200C by a wire harness 300C and is used to perform a wafer-level aging inspection on the wafer.

[0081] Here, a probe hole is machined in the inspection probe micropositioner 20C. The inspection probe 21C is a spring hole and is mounted within the probe hole. It may be understood that the inspection probe 21C pierces a chip on the wafer to energize the chip. The first region 11C and the second region 12C are two non-overlapping and electrically connected regions on the PCB substrate 10C. A first contact 13C is provided on the surface of the first region 11C, and each of the first contacts is electrically connected by an internal circuit of the PCB substrate 10C to a corresponding second contact 14C provided within the second region 12C. The external inspection device 200C is connected to the connector 30C on the second region 12C by a flexible wire harness 300C or a cable. The second region 12C transmits an inspection signal to the first region 11C, and the first region 11C transmits a signal to the wafer within the inspection chamber 121C by the inspection probe 21C, thereby performing a wafer-level aging inspection on the wafer. The connector 30C is flexibly connected to the external inspection device 200C, with a simple structure and a flexible and reliable layout.

[0082] In this embodiment, a connector 30C is newly provided in the second region 12C of the PCB substrate 10C, and the connector 30C is connected to the external inspection device 200C using the wire harness 300C, thereby canceling the conventional method of connection using a probe. That is, a rigid connection is replaced with a flexible connection, whereby the relative positions of the wafer-level aging inspection clamp fixture 100C and the external inspection device 200C can be set flexibly respectively. The structural correlation between the wafer-level aging inspection clamp fixture 100C and the external inspection device 200C is weakened, and the number of channels for supplying power to the wafer can be increased. Also, when connecting to the external inspection device 200C using a probe, there are many contact points, and the reliability of the circuit connection is low. However, in the present invention, connection is made using the wire harness 300C, and since there are no contact points, the reliability of the circuit connection is thereby improved. Moreover, the wafer-level aging inspection clamp fixture 100C can be independently and conveniently attached and detached, so the maintainability is improved.

[0083] The wafer-level aging inspection clamp fixture 100C of the present invention has a compact structure and high integration, thereby increasing the number of channels connected to the hardware in a small size, supporting wafer-level aging inspection for up to 8-inch SiC wafers, and providing more than 2,000 power supply and wafer-level aging inspection channels.

[0084] In this embodiment, there are a plurality of connectors 30C, and the plurality of connectors 30C are arranged in an array on the PCB substrate 10C. The plurality of connectors 30C are densely attached to the second region 12C and connected to the external inspection device 200C by a flexible wire harness 300C or a cable. By arranging the connectors 30C in an array, the second region 12C of the PCB substrate 10C can be fully utilized, the usage area of the PCB substrate 10C can be saved, and the number of power supply channels per unit area can be further increased to achieve high-density multi-channel wafer-level aging inspection.

[0085] FIG. 21 is a schematic structural diagram of the inspection probe micropositioner 20C according to an embodiment of the present invention, FIG. 22 is a schematic enlarged view of part A in FIG. 21, FIG. 23 is a schematic structural diagram of the connection component 40 according to the present invention, and FIG. 24 is a schematic enlarged view of part B in FIG. 23. As shown in FIGS. 21 to 24, in this embodiment, the inspection probe micropositioner 20C is circular, and the wafer-level aging inspection clamp fixture 100C further includes an annular connection component 40C. The connection component 40C is connected to the PCB substrate 10C, is externally fitted to the outer periphery of the inspection probe micropositioner 20C, and is connected to the inspection probe micropositioner 20C. Here, the connection component 40C presses the inspection probe micropositioner 20C and locks it to the inspection probe micropositioner 20C, whereby the inspection probe micropositioner 20C is fixed to the PCB substrate 10C, and the structural stability of the wafer-level aging inspection clamp fixture 100C is improved. In this embodiment, the connection component 40C and the PCB substrate are connected by bolts.

[0086] In this embodiment, the micro-positioner 20C for inspection probes is made of a material with high hardness and low expansion rate. When using the clamping jig 100C for wafer-level aging inspection, the micro-positioner 20C for inspection probes and the PCB board 10C are fixed to specific positions relative to each other without relative displacement. Otherwise, the inspection probe 21C on the micro-positioner 20C for inspection probes cannot contact the PCB board 10C and is blocked. The conventional micro-positioner 20C for inspection probes and the connecting component 40C are positioned by the cooperation of a pin and a cylindrical hole. When the micro-positioner 20C for inspection probes is used, the environmental temperature is close to 200 °C at most. Due to the high temperature, the micro-positioner 20C for inspection probes and the connecting component 40C will inevitably expand. Since the materials of both are different and the difference in expansion rate is large, the pin and the cylindrical hole press against each other, generating a very large stress. Furthermore, problems such as cracking damage to the micro-positioner 20C for inspection probes or deformation of the connecting component 40C occur, making it difficult to remove.

[0087] In this embodiment, at least one groove 22C is provided at the edge of the inspection probe micro-positioner 20C. The connection component 40C has a support portion 41C for supporting the inspection probe micro-positioner 20C, and at least one positioning post 42C is provided on the support portion 41C. Each positioning post 42C is arranged corresponding to one groove 22C, thereby positioning the inspection probe micro-positioner 20C. The cooperation between the positioning post 42C and the groove 22C limits the position of the inspection probe micro-positioner 20C. When the inspection probe micro-positioner 20C and the connection component 40C expand due to heating, the positioning post 42C can slide slightly in the groove 22C without pressing against the groove 22C, eliminating the stress during the expansion of the inspection probe micro-positioner 20C and the connection component 40C, and avoiding deformation of the inspection probe micro-positioner 20C and the connection component 40C. In this embodiment, the number of both the groove 22C and the positioning post 42C is set to three, and the three grooves 22C are distributed at intervals along the circumferential direction of the inspection probe micro-positioner 20C at the edge of the micro-positioner.

[0088] In this embodiment, the opening of the groove 22C is provided facing the corresponding positioning post 42C. Here, the groove 22C is not closed, and the positioning post 42C only contacts the two sides along the circumferential direction of the micro-positioner on the groove 22C. When the inspection probe micro-positioner 20C and the connection component 40C expand due to heating, the positioning post 42C can slide slightly along the radial direction of the inspection probe micro-positioner 20C in the groove 22C, without the positioning post 42C pressing against the groove 22C, and avoiding the generation of stress and deformation during the expansion of the inspection probe micro-positioner 20C and the connection component 40C.

[0089] The cover plate assembly 110C and the lower seal assembly 120C are connected to form an airtight sealed inspection chamber 121C. A seal ring 122C is provided at the top of the lower seal assembly 120C. When the lower seal assembly 120C moves upward, the seal ring 122C is first connected to the PCB substrate 10C, then compressed, and an airtight seal is formed after compression. The inspection chamber 121C having airtightness has a certain air pressure, generating a pressing adhesion force that combines the lower seal assembly 120C and the PCB substrate 10C. However, if the pressing adhesion force in the inspection chamber 121C is too large, the lower seal assembly 120C will contact the PCB substrate 10C and transmit too large a force to the PCB substrate 10C.

[0090] FIG. 25 is a schematic position diagram of the endurance component 60C according to an embodiment of the present invention, and FIG. 26 is a schematic structural diagram of the endurance component 60C shown in FIG. 25. As shown in FIGS. 25 and 26, in this embodiment, the wafer-level aging inspection clamp jig 100C further includes a circular upper seal cover 50C, and the upper seal cover 50C is located at the top of the PCB substrate 10C. The wafer-level aging inspection clamp jig 100C further includes a plurality of endurance components 60C arranged at intervals along the circumferential direction of the upper seal cover 50C. Each endurance component 60C includes an endurance column 61C. The endurance column 61C passes through the PCB substrate 10C and is connected to the upper seal cover 50C. The endurance column 61C protrudes from the bottom surface of the PCB substrate 10C. Here, the upper seal cover 50C is tightly connected to the PCB substrate 10C by the seal ring 122C of the lower seal assembly 120C, imparting airtightness to the top of the first region 11C. There are endurance columns 61C arranged at intervals along the circumferential direction of the upper seal cover 50C on the PCB substrate 10C. The endurance columns 61C protrude from the bottom surface of the PCB substrate 10C. When the pressing adhesion force in the inspection chamber 121C is too large and the lower seal cover 120C is too close to the PCB substrate 10C, the endurance columns 61C contact the lower seal cover 120C before the PCB substrate 10C, receiving the pressing adhesion force of the inspection chamber 121C, thereby avoiding the PCB substrate 10C from receiving too large a pressure.

[0091] In this embodiment, the height of the endurance pillar 61C protruding from the bottom surface of the PCB substrate 10C is any value between 0.1 and 0.2 mm. If the height of the endurance pillar 61C protruding from the bottom surface of the PCB substrate 10C is too high, it will affect the sealing performance between the PCB substrate 10C and the lower sealing cover 120C. If it is too low, it is difficult to exert the endurance effect. In this embodiment, the height of the endurance pillar 61C protruding from the bottom surface of the PCB substrate 10C is 0.1 mm. When the pressing adhesion force of the inspection chamber 121C is too large, it can be connected to the lower sealing cover 120C before the PCB substrate 10C, so that the PCB substrate 10C can avoid being damaged by receiving too much pressure.

[0092] In this embodiment, the endurance component 60C further includes at least one spacer 62C externally fitted to the endurance pillar 61C, thereby adjusting the height of the endurance pillar 61C protruding from the bottom surface of the PCB substrate 10C. In this embodiment, the thickness of each spacer 62C is 0.1 mm, and the height of the endurance pillar 61C protruding from the bottom surface of the PCB substrate 10C may be adjusted by adjusting the number of spacers 62C.

[0093] In this embodiment, the wafer-level aging inspection clamp fixture 100C further includes a heat dissipation component 70C attached to the PCB substrate 10C. The heat dissipation component 70C is located between the first region 11C and the second region 12C and is used to block the heat generated in the first region 11C. In the wafer-level aging inspection process, since the wafer is continuously heated, the temperature of the first region 11C is high, and the heat diffuses to affect other regions of the PCB substrate 10C. The high temperature has an adverse effect on the connector 30C and further affects the accuracy of the wafer-level aging inspection. To avoid the high temperature affecting the connector 30C, the present invention provides a heat dissipation component 70C between the first region 11C and the second region 12C.

[0094] In this embodiment, a copper foil sheet is laid on the surface of the PCB substrate 10C at the position where the heat dissipation component 70C is attached. As a result, the heat diffused in the first region 11C is concentrated at the position where the heat dissipation component 70C is attached. The heat dissipation component 70C includes a fan and heat dissipation fins. The fan is located on the side edge along the width direction on the PCB substrate 10C and generates an air flow capable of carrying away heat. The air flow blows from one side in the width direction of the PCB substrate 10C to the other side, avoiding the heat in the first region 11C from diffusing to the second region 12C, thereby avoiding the high temperature from affecting the connector 30C, protecting the wafer level aging inspection clamp fixture 100C, and improving the accuracy of the wafer level aging inspection.

[0095] In this embodiment, the wafer level aging inspection clamp fixture 100C further includes a structural component 80C that is located at the top of the PCB substrate 10C and is connected to the upper sealing cover 50C. The wafer level aging inspection clamp fixture 100C further includes a plurality of reinforcing components 90C that are located at the top of the PCB substrate 10C. The plurality of reinforcing components 90C are respectively provided on the outer peripheral side of the structural component 80C, the edge of the PCB substrate 10C, and the second region 12C. Here, the reinforcing component 90C is connected by screws between the periphery of the PCB substrate 10C and between adjacent connector 30C sets on the second region 12C, and the structural strength of the wafer level aging inspection clamp fixture 100C is improved. The structural component 80C is simultaneously connected to the reinforcing component 90C on the first region 11C and the PCB substrate 10C, and can impart strength to the stressed part of the PCB substrate 10C.

[0096] FIG. 27 is a schematic structural diagram of a lifting mechanism 400C according to an embodiment of the present invention. As shown in FIG. 27, this embodiment further provides a wafer-level aging inspection device, and the wafer-level aging inspection device includes a wafer-level aging inspection clamp fixture 100C and a lifting mechanism 400C. The lifting mechanism 400C is provided to expand and contract vertically under control, and the lifting mechanism 400C movably abuts against the wafer-level aging inspection clamp fixture 100C, thereby moving the lower sealing assembly 120C upward in conjunction to connect to the cover plate assembly 110C to form an inspection chamber 121C.

[0097] Before using the wafer-level aging inspection clamp fixture 100C of the present invention, first connect the connector 30C to an external inspection device 200C and a hardware circuit. When the wafer-level aging inspection clamp fixture 100C operates, the cover plate assembly 110C connects to the lower sealing assembly 120C to form an inspection chamber 121C having airtightness, thereby performing a wafer-level aging inspection on the wafer. Specifically, the wafer is placed at a specific position in the inspection chamber 121C, the cover plate assembly 110C does not move, the lower sealing assembly 120C is lifted from below the inspection probe micropositioner 20C, and when the seal ring 122C of the lower sealing assembly 120C connects to the PCB substrate 10C and is slightly compressed, an airtight sealed inspection chamber 121C is formed.

[0098] During the process of lifting the lower sealing assembly 120C, the inspection probe 21C on the inspection probe micro-positioner 20C pierces the inspection point at a specific position on the surface of the wafer. The inspection probe 21C is a spring hole and is compressed by a predetermined stroke. When the tip of the inspection probe 21C contacts the surface of the wafer to generate a predetermined pressure, a circuit for power feeding aging and inspection of the wafer is formed, and at this time, power feeding aging and inspection of the wafer can be performed. The lower sealing assembly 120C forms an airtight space together with the PCB substrate 10C and the upper sealing cover 50C, and a specific compressed gas can be filled into the airtight space to protect the wafer. In high-voltage inspection, the compressed gas can prevent the high-voltage arc from damaging the inspection probe 21C or the wafer.

[0099] FIG. 28 is a schematic structural diagram of a heating device according to an embodiment of the present invention, FIG. 29 is a schematic cross-sectional view of a heating device according to an embodiment of the present invention, FIG. 30 is a schematic partial enlarged view of portion A shown in FIG. 29, FIG. 31 is a schematic cross-sectional view of the heating device from another angle according to an embodiment of the present invention, and FIG. 32 is a schematic partial enlarged view of portion B shown in FIG. 31. In some embodiments, as shown in FIGS. 28-32, in this embodiment, the present invention provides a clamp jig 400D for wafer-level aging inspection. The clamp jig 400D for wafer-level aging inspection includes a cover plate assembly 80D, a lower sealing assembly 210D, and a heat sink 230D for placing a wafer 300D. The cover plate assembly 80D is connected to the lower sealing assembly 210D to form an inspection chamber 211D. The heat sink 230D is located within the inspection chamber 211D. The heating device 100D is located within the inspection chamber 211D. The heat sink 230D is stacked above the heating device 100D. The heating device 100D is electrically connected to an electrical assembly 226D located below the lower sealing assembly 210D. The heating device 100D includes a film heater layer 10D and a connection assembly 20D. The film heater layer 10D has a resistance wire 11D arranged uniformly and at least one power supply port 12D connected to the resistance wire 11D. The film heater layer 10D is provided on the side of the heat sink 230D away from the wafer 300D to heat the wafer 300D by the heat sink 230D. The connection assembly 20D includes at least one set of first connection probe sets 21D passing through the lower sealing assembly 210D. One end of each of the first connection probe sets 21D contacts a corresponding power supply port 12D, and the other end passes through the lower sealing assembly 210D to contact the electrical assembly 226D. Thereby, the electrical assembly 226D supplies power to and heats the film heater layer 10D, thereby heating the wafer 300D on the heat sink 230D.

[0100] The film heater layer 10D contacts the lifting mechanism 220D by the first connection probe set 21D. Thereby, the lifting mechanism 220D supplies power to the resistance wire 11D inside the film heater layer 10D. Thereby, the film heater layer 10D is uniformly electrically conducted and heated by the power supply port 12D, thereby realizing uniform heating of the wafer 300D by the heating device 100D, and avoiding the wafer 300D from being damaged or affecting the inspection effect due to non-uniform heating. Here, in the inspection chamber 211D of the lower sealing assembly 210D, the wafer 300D, the heat sink 230D, and the heating device 100D are sequentially provided from top to bottom. The number of the first connection probe sets 21D may be one or more, and the number of the power supply ports 12D may be one or more.

[0101] As shown in FIG. 30, in this embodiment, the resistance wires 11D are uniformly arranged in the film heater layer 10D. By using the first connection probe set 21D, the film heater layer 10D is respectively brought into contact with the power supply port 12D and the lifting mechanism 220D to conduct electricity. Thereby, the resistance wires 11D realize heating by electrical connection, thereby realizing uniform heating of the wafer 300D on the heat sink 230D of the film heater layer 10D, avoiding the wafer 300D from being damaged due to non-uniform heating, and improving the yield rate of the wafer 300D. Here, the film heater layer 10D is connected to the lifting mechanism 220D by the first connection probe set 21D to realize heating by conduction. The heat transfer path is in the order of the film heater layer 10D, the heat sink 230D, and the wafer 300D. The wafer 300D can be prevented from being damaged by directly contacting the heating device 100D, thereby reducing the defective rate of the wafer 300D.

[0102] In this embodiment, the film heater layer 10D of the heating device 100D has a resistance wire 11D uniformly arranged therein and at least one power supply port 12D connected to the resistance wire 11D. The first connection probe set 21D is directly connected to the resistance wire 11D by the power supply port 12D, thereby realizing uniform heating of the film heater layer 10D, avoiding providing a plurality of probe assemblies corresponding to a plurality of heating sheets, and simplifying the structure of the heating device 100D.

[0103] In this embodiment, the film heater layer 10D is a mica heating sheet or a ceramic heating sheet. Specifically, the resistance wire 11D is uniformly distributed inside the mica heating sheet or the ceramic heating sheet. Thereby, the lifting mechanism 220D is connected to the resistance wire 11D by the first connection probe set 21D, thereby making the mica heating sheet or the ceramic heating sheet conductive and heating it, and further realizing uniform heating of the wafer 300D located above the heat sink of the heating device 100D. Here, the size of the mica heating sheet or the ceramic heating sheet is consistent with the size of the heat sink 230D, whereby the heating device 100D can uniformly heat the heat sink 230D, and thereby the heating of the wafer 300D becomes uniform.

[0104] In a preferred embodiment, the film heater layer 10D is a mica heating sheet, and the manufacturing cost of the mica heating sheet is low, thereby reducing the manufacturing cost of the heating device 100D.

[0105] In this embodiment, the heating device 100D further includes a first heat insulation component 30D. The first heat insulation component 30D is located below the heat sink 230D, and the film heater layer 10D and the first heat insulation component 30D are provided integrally. Specifically, the first heat insulation component 30D and the film heater layer 10D are integrated and located at the bottom of the film heater layer 10D, avoiding direct contact between the film heater layer 10D and the lower sealing assembly 210D when the film heater layer 10D is heated to a high temperature, thereby avoiding damage to the wafer level aging inspection device 200D.

[0106] In this embodiment, the film heater layer 10D is located on the side closer to the heat sink 230D of the first heat insulation component 30D. A first through hole 31D is formed in the first heat insulation component 30D at a position corresponding to the power supply port 12D. As a result, all of the first connection probe sets 21D pass through the first through hole 31D and contact the power supply port 12D. Specifically, the film heater layer 10D and the first heat insulation component 30D are integrated. The first connection probe sets 21D are connected in contact with the power supply port 12D of the film heater layer 10D through the first through hole 31D of the first heat insulation component 30D. Thereby, the lifting mechanism 220D is brought into contact with and electrically conducted to the resistance wire 11D inside the film heater layer 10D, thereby electrically conducting and heating the film heater layer 10D, and thereby realizing uniform heating of the wafer 300D by the film heater layer 10D. Here, the number of the first through holes 31D is two, and the number of the first connection probe sets 21D is two. Each first through hole 31D corresponds to one first connection probe set 21D, and the two first through holes 31D are symmetrically arranged with respect to the center line of the first heat insulation component 30D.

[0107] In this embodiment, a second heat insulation component 40D is further included. The second heat insulation component 40D is located on the side away from the heat sink 230D of the first heat insulation component 30D. The second heat insulation component 40D has a second through hole 41D corresponding to the first through hole 31D. All of the first connection probe sets 21D pass through the first through hole 31D and the second through hole 41D and contact the power supply port 12D. Specifically, a second heat insulation component 40D is further provided below the first heat insulation component 30D, thereby blocking the heat of the film heater layer 10D. Here, the number of the second through holes 41D is two. One end of each first connection probe set 21D passes through the first through hole 31D and is connected in contact with the power supply port 12D of the film heater layer 10D, and the other end passes through the second through hole 41D and is connected in contact with the power supply port 12D of the film heater layer 10D. Thereby, the heating device 100D is connected to the lifting mechanism 220D by the first connection probe sets 21D, thereby electrically conducting and heating the film heater layer 10D, and thereby realizing heating of the wafer 300D.

[0108] In this embodiment, the heating device 100D is located between the film heater layer 10D and the heat sink 230D, and further includes a ceramic plate 50D for transferring the heat generated in the film heater layer 10D to the heat sink 230D. Specifically, the ceramic plate 50D is provided between the film heater layer 10D and the heat sink 230D, and the size of the ceramic plate 50D is consistent with the sizes of the film heater layer 10D and the heat sink 230D. Thereby, the ceramic plate 50D can uniformly transfer the heat of the film heater layer 10D to the heat sink 230D, and then to the wafer 300D. The film heater layer 10D is prevented from directly contacting the heat sink 230D and causing overheating of the heat sink 230D, thereby preventing the wafer 300D from being damaged due to overheating.

[0109] As shown in FIG. 32, in this embodiment, the heating device 100D further includes at least one first temperature sensor 60D and at least one second connection probe set 22D. The first temperature sensor 60D is provided on the film heater layer 10D and is used to measure the temperature of the film heater layer 10D. Each of the second connection probe sets 22D corresponds to one first temperature sensor 60D and passes through the lower sealing assembly 210D. One end of the second connection probe set 22D contacts the first temperature sensor 60D, and the other end contacts the lifting mechanism 220D. Specifically, the second connection probe set 22D is used to connect the first temperature sensor 60D located on the film heater layer 10D and the lifting mechanism 220D. Thereby, the first temperature sensor 60D can measure the temperature of the film heater layer 10D in real time, preventing the film heater layer 10D from causing irreversible damage to the heat sink 230D and the wafer 300D when the temperature is too high, and also preventing the lifting mechanism 220D located below the lower sealing assembly 210D from being damaged due to overheating. Here, the number of the first temperature sensors 60D is two, and the number of the second connection probe sets 22D is two. Each first temperature sensor 60D corresponds to one second connection probe set 22D, and the two second connection probe sets 22D are respectively the main temperature control inspection probe set and the overheat protection probe set of the film heater layer 10D.

[0110] In this embodiment, the heating device 100D further includes a second temperature sensor 70D and a third connection probe set 23D. The second temperature sensor 70D is provided on the heat sink 230D and is used to measure the temperature of the heat sink 230D. Each third connection probe set 23D corresponds to one second temperature sensor 70D and sequentially passes through the lower sealing assembly 210D, the second heat insulating component 40D, the first heat insulating component 30D, the film heater layer 10D, and the ceramic plate 50D. One end of the third connection probe set 23D contacts the second temperature sensor 70D, and the other end contacts the lifting mechanism 220D. Thereby, the second temperature sensor 70D measures the temperature of the heat sink 230D while being energized, avoiding damaging the wafer 300D due to the overly high temperature of the heat sink 230D, and thereby improving the yield rate of the wafer 300D.

[0111] In this embodiment, the heating device 100D further includes a fourth connection probe set 24D that directly contacts the heat sink 230D. Each fourth connection probe set 24D sequentially passes through the lower sealing assembly 210D, the second heat insulating component 40D, the first heat insulating component 30D, the film heater layer 10D, and the ceramic plate 50D and abuts against the heat sink 230D. One end of the fourth connection probe set 24D contacts the heat sink 230D, and the other end contacts the lifting mechanism 220D. Thereby, the lifting mechanism 220D supplies power to the heat sink 230D, and thereby performs a power supply inspection on the wafer 300D.

[0112] FIG. 33 is a schematic structural diagram of a wafer-level aging inspection apparatus according to an embodiment of the present invention, FIG. 34 is a schematic cross-sectional view of a partial structure of a wafer-level aging inspection apparatus according to an embodiment of the present invention, and FIG. 35 is a schematic local enlarged view of a portion C shown in FIG. 34. As shown in FIGS. 33 to 35, the present invention further provides a wafer-level aging inspection apparatus 200D including a wafer-level aging inspection clamp jig 400D and a lifting mechanism 220D. The lifting mechanism 220D includes a lifting assembly 225D and an electrical assembly 226D. The electrical assembly 226D is provided at the free end of the lifting assembly 225D. When the electrical assembly 226D is connected to the wafer-level aging inspection clamp jig 400D, it supplies power to the heating device 100D, thereby heating the wafer 300D to perform a wafer-level aging inspection.

[0113] Specifically, the wafer-level aging inspection apparatus 200D of this embodiment has a lower sealing assembly 210D. The wafer 300D, the heat sink 230D, and the heating device 100D are sequentially provided in the inspection chamber 211D of the lower sealing assembly 210D from top to bottom. The lifting mechanism 220D is provided below the lower sealing assembly 210D, thereby supplying power to the film heater layer 10D. That is, both ends of the first connection probe set 21D inside the heating device 100D are respectively connected to the lifting mechanism 220D and the film heater layer 10D, thereby making the film heater layer 10D conductive and heating it, thereby heating the heat sink 230D and the wafer 300D located above the heat sink 230D, and further realizing a high-temperature wafer-level aging inspection of the wafer 300D by the wafer-level aging inspection apparatus 200D.

[0114] In this embodiment, at least one first pad position 221D is provided on the surface facing the clamp jig for wafer-level aging inspection of the lifting mechanism 220D. Each first connection probe set 21D of the heating device 100D penetrates the lower sealing assembly 210D and contacts one first pad position 221D, whereby the electrical assembly 226D supplies power to the film heater layer 10D. Specifically, the first connection probe set 21D passes through the lower sealing assembly 210D and contacts the first pad position at the uppermost part of the lifting mechanism 220D, thereby enabling the lifting mechanism 220D to supply power to and heat the film heater layer 10D. Here, the number of first pad positions 221D is two, and each first pad position 221D is arranged corresponding to one power supply port 12D of the film heater layer 10D.

[0115] In this embodiment, at least one second pad position 222D is provided at the uppermost part of the lifting mechanism 220D. One end of each second connection probe set 22D of the heating device 100D penetrates the lower sealing assembly 210D and contacts one second pad position 222D, and the other end contacts the first temperature sensor 60D inside the film heater layer 10D. Thereby, the lifting mechanism 220D supplies power to the first temperature sensor 60D to measure the temperature of the film heater layer 10D in real time, and the film heater layer 10D avoids damaging other structures of the wafer-level aging inspection device 200D due to excessive temperature. Here, the number of second pad positions 222D is two, and each second pad position 222D is arranged corresponding to one first temperature sensor 60D of the film heater layer 10D.

[0116] In this embodiment, a third pad position 223D is provided at the uppermost part of the lifting mechanism 220D. One end of the third connection probe set 23D of the heating device 100D penetrates the lower sealing assembly 210D and contacts one third pad position 223D, and the other end contacts the second temperature sensor 70D inside the heat sink 230D. Thereby, the lifting mechanism 220D supplies power to the second temperature sensor 70D to measure the temperature of the heat sink 230D in real time, and the heat sink 230D avoids damaging the wafer 300D due to excessive temperature.

[0117] In this embodiment, a fourth pad position 224D is provided at the uppermost part of the lifting mechanism 220D. One end of the fourth connection probe set 24D of the heating device 100D penetrates the lower sealing assembly 210D and contacts one fourth pad position 224D, and the other end contacts the heat sink 230D. Thereby, the lifting mechanism 220D supplies power to the heat sink 230D, thereby performing a power supply inspection on the wafer 300D.

[0118] In this embodiment, the number of the first pad positions 221D is consistent with the number of the first connection probe sets 21D and corresponds one-to-one. Specifically, each first pad position 221D corresponds to one first connection probe set 21D. Thereby, each power supply port 12D of the film heater layer 10D is arranged corresponding to one first connection probe set 21D. Thereby, the two power supply ports 12D of the film heater layer 10D can conduct electricity and heat simultaneously, and the heating efficiency of the film heater layer 10D is improved.

[0119] The heating device 100D of this embodiment includes a film heater layer 10D and a connection assembly 20D. The film heater layer 10D has a resistance wire 11D arranged uniformly and at least one power supply port 12D connected to the resistance wire 11D. The film heater layer 10D is provided on the side away from the wafer 300D of the heat sink 230D, and the heat sink 230D heats the wafer 300D. The connection assembly 20D includes at least one set of first connection probe sets 21D passing through the lower sealing assembly 210D. One end of each of the first connection probe sets 21D contacts the corresponding power supply port 12D, and the other end passes through the lower sealing assembly 210D and contacts the electrical assembly 226D. Thereby, the electrical assembly 226D supplies power to and heats the film heater layer 10D, thereby heating the wafer 300D on the heat sink 230D. The film heater layer 10D having the resistance wire 11D distributed uniformly can heat the wafer 300D uniformly, avoiding damage to the wafer 300D due to non-uniform heating thereof, and improving the yield rate of the wafer 300D. Further, the heating device 100D of the present invention further includes a ceramic plate 50D. The ceramic plate 50D is located between the second heat insulation component 40D and the heat sink 230D, and is used to transfer the heat generated in the film heater layer 10D to the heat sink 230D to avoid damaging the wafer 300D due to local overheating of the heating device 100D when the heating device 100D is in direct contact with the wafer 300D, thereby reducing the defective rate of the wafer 300D in the wafer-level aging inspection process.

[0120] It should be understood by those skilled in the art that although several exemplary embodiments of the present invention are shown and described in detail in this specification, many other modifications or changes that conform to the principles of the present invention can still be directly determined or derived based on the content disclosed in the present invention without departing from the spirit and scope of the present invention. Therefore, the scope of the present invention should be construed as covering all those other modifications or changes and should be determined.

Claims

1. A wafer level aging inspection apparatus, comprising a cover plate assembly, a lower seal assembly, a heat sink, and a heating device, wherein the heat sink is used for placing a wafer, the cover plate assembly includes a first PCB substrate and a micro-positioner for inspection probes connected to the first PCB substrate, the lower seal assembly includes a lower seal cover, the lower seal cover is connected to the cover plate assembly to form an inspection chamber, the heat sink and the heating device are located in the inspection chamber, and the heating device includes a clamp fixture for wafer level aging inspection located between the lower seal cover and the heat sink, and a lifting mechanism provided to expand and contract vertically under control, the lifting mechanism being movably abutted against the clamp fixture for wafer level aging inspection, thereby driving the lower seal assembly to move upward in conjunction and connecting to the cover plate assembly to form the inspection chamber.

2. The wafer level aging inspection apparatus according to claim 1, wherein the lifting mechanism includes a lifting assembly and an electrical assembly, the electrical assembly is provided at a free end of the lifting assembly, the electrical assembly is movably connected to the lower seal assembly, and the electrical assembly supplies power to the heating device and the heat sink, so as to perform wafer level aging inspection on the wafer.

3. The heating device includes a film heater layer having resistance wires uniformly arranged and at least one power supply port connected to the resistance wires, and at least one set of first connection probe sets passing through the lower seal cover, one end of each set contacting one of the power supply ports and the other end contacting the electrical assembly, whereby the electrical assembly supplies power to the film heater layer to heat the wafer on the heat sink. The wafer level aging inspection apparatus according to claim 2 includes each of the first connection probe sets.

4. The electrical assembly includes A second PCB substrate connected to an external circuit, at least one first pad position is provided at the uppermost part thereof, and each of the first pad positions is arranged corresponding to one of the first connection probe sets. When contacting the first connection probe set, the external circuit is powered to the heating device by the second PCB substrate, thereby performing a heating inspection on the wafer. The wafer-level aging inspection device according to claim 3, including the second PCB substrate.

5. At least one second connection probe set in contact with the heat sink is further provided through the lower sealing cover. At least one second pad position is further provided at the uppermost part of the second PCB substrate, and each of the second pad positions is arranged corresponding to one of the second connection probe sets. When contacting the second connection probe set, the external circuit is powered to the heat sink by the second PCB substrate, thereby performing a power supply inspection on the wafer. However, a plurality of first gas holes are provided at the bottom of the lower sealing cover, a plurality of second gas holes are provided on the second PCB substrate, each of the second gas holes corresponds to one of the first gas holes, and the electrical assembly An adapter plate provided below the second PCB substrate, having a gas flow path communicating with a plurality of the second gas holes. Thereby, an external gas passage is evacuated into the lower sealing cover through the gas flow path, the second gas holes and the first gas holes, thereby adsorbing the heat sink and the wafer. The wafer-level aging inspection device according to claim 4, further including the adapter plate.

6. The first PCB substrate includes a first interface set and a second interface set, and the inspection probe micropositioner includes a plurality of inspection probes. The first interface set is provided on a first side surface of the first PCB substrate facing the lower sealing assembly, one end of each of the inspection probes is connected to a corresponding first interface included in the first interface set, and the other end is connected to a wafer, thereby performing a wafer-level aging inspection on the wafer. The second interface set may be provided on any second side surface of the first PCB substrate other than the first side surface. The wafer-level aging inspection clamp jig, A plurality of connectors attached to the second side surface of the first PCB substrate, each of which is connected to a corresponding second interface included in the second interface set, and each of which is connected to an external inspection device by a wire harness, and further includes the connector used for performing wafer-level aging inspection on the wafer, the wafer-level aging inspection device according to any one of claims 1 to 5.

7. Further includes a mounting base, and the mounting base A bottom plate assembly, A support platform for supporting the lower sealing assembly, A pair of first slide grooves connected to the bottom plate assembly, both of which extend along the horizontal direction, and both ends of the support platform are slidably connected to the corresponding first slide grooves respectively, and the lower sealing assembly is interlocked by the support platform and moves along the extending direction of the first slide grooves, including the first slide grooves, When loading or unloading the wafer, the lower sealing assembly slides out to the outside of the mounting base along the first slide groove, and after the loading or unloading of the wafer is completed, the lower sealing assembly returns into the mounting base along the first slide groove, the wafer-level aging inspection device according to any one of claims 1 to 5.

8. The mounting base An upper plate assembly connected to the bottom plate assembly by a plurality of struts, A pair of second slide grooves connected to the upper plate assembly, both of which extend along the horizontal direction, and both ends of the cover plate assembly are slidably connected to the corresponding second slide grooves respectively, further includes the second slide grooves, the wafer-level aging inspection device according to claim 7.

9. Includes an upper plate assembly and a bottom plate assembly, the upper plate assembly and the bottom plate assembly are connected by struts, the wafer-level aging inspection clamp jig is provided below the upper plate assembly and connected to the upper plate assembly, and the lifting mechanism is a mounting base attached to the bottom plate assembly, A floating mechanism provided in the upper plate assembly, the floating mechanism being provided to float when the cover plate assembly is pressed by the lower sealing cover, thereby avoiding deformation of the cover plate assembly, and the wafer level aging inspection apparatus according to claim 1, further comprising the floating mechanism.

10. The upper plate assembly includes an upper cover plate and a lower cover plate, the lower cover plate has a limiting groove, and the floating mechanism A floating plate provided at the uppermost part of the cover plate assembly and located in the limiting groove, the floating plate protruding from the bottom of the lower cover plate, The wafer level aging inspection apparatus according to claim 9, further comprising: a telescopic assembly connected to the upper cover plate and having a bottom connected to or in contact with the floating plate, so that when the floating plate is pressed by the cover plate assembly, the floating plate is compressed to move upward.

11. The floating plate is circular and is arranged opposite to the micro-positioner for the inspection probe, The size of the floating plate is larger than the size of the micro-positioner for the inspection probe and smaller than the size of the lower sealing cover, and the wafer level aging inspection apparatus according to claim 10.

12. At least one first mounting groove is provided at the bottom of the upper cover plate, at least one second mounting groove is provided at the uppermost part of the floating plate, each second mounting groove corresponds to one first mounting groove, and the telescopic assembly At least one elastic component, each elastic component being provided inside corresponding to one of the first mounting groove and the second mounting groove, Optionally, the number of the elastic components is plural, and the plural elastic components are uniformly arranged at the uppermost part of the floating plate, and the wafer level aging inspection apparatus according to claim 11.

13. The lifting mechanism Includes a second PCB substrate, the uppermost part of the second PCB substrate has a pad position for supplying power to the heating device and the heat sink, thereby performing an electrical assembly for wafer level aging inspection on the wafer. A lifting assembly, wherein the electric assembly is provided at the free end of the lifting assembly, and the electric assembly is driven to move upward, whereby the position of the pad cooperates with the lower sealing cover and interlocks the lower sealing cover to move upward until it is connected to the cover plate assembly to form the inspection chamber. The wafer level aging inspection device according to any one of claims 9 to 12, comprising the lifting assembly used for this purpose.

14. The lifting assembly is A plurality of worm gear assemblies respectively connected to the electric assembly, Connected to the plurality of worm gear assemblies, thereby driving the plurality of worm gear assemblies to interlock and lift the electric assembly. The wafer level aging inspection device according to claim 13, comprising a motor.

15. A loading / unloading device, at least one inspection device, and at least one wafer level aging inspection device according to any one of claims 1 to 5, 9 to 12, The loading / unloading device is used to place a wafer into the corresponding wafer level aging inspection device to perform wafer level aging inspection. Any of the wafer level aging inspection devices is connected to the corresponding inspection device to perform wafer level aging inspection. A wafer level aging inspection system.

16. After the loading of the wafer is completed, controlling a lifting mechanism to rise to a first height, whereby the lifting mechanism connects to a lower sealing assembly; Controlling the lifting mechanism to continuously lift the lower sealing assembly to a second height, whereby the lower sealing assembly moves until it connects to a cover plate assembly to form an inspection chamber; Powering a heating device, a heat sink, and a micropositioner for inspection probes included in the cover plate assembly, thereby performing wafer level aging inspection on the wafer. The inspection method used for the wafer level aging inspection device according to any one of claims 1 to 5.

17. A clamping jig for wafer level aging inspection, comprising a cover plate assembly and a lower sealing assembly, wherein the cover plate assembly is connected to the lower sealing assembly to form an inspection chamber for accommodating a wafer.

18. The cover plate assembly is a PCB substrate including a first region and a second region, wherein the first region and the second region are located on different sides of the PCB substrate respectively, and any of the first contacts provided in the first region is electrically connected to a corresponding second contact provided in the second region; a PCB substrate, an inspection probe micropositioner located at the bottom of the PCB substrate and connected to the PCB substrate, having a plurality of inspection probes, one end of each of the inspection probes contacts a corresponding one of the first contacts, and the other end contacts a wafer, thereby performing a wafer-level aging inspection on the wafer; the inspection probe micropositioner, at least one connector attached to the second region of the PCB substrate, each of which is connected to a corresponding one of the second contacts, and each of the connectors is connected to an external inspection device by a wire harness, and is used for performing a wafer-level aging inspection on the wafer; the wafer-level aging inspection clamp fixture according to claim 17, comprising

19. There are a plurality of the connectors, and the plurality of connectors are arranged in an array on the PCB substrate, the inspection probe micropositioner is circular, and the wafer-level aging inspection clamp fixture is an annular connecting component connected to the PCB substrate, provided so as to surround the outer periphery of the inspection probe micropositioner, and further includes the connecting component connected to the inspection probe micropositioner, at least one groove is provided at an edge of the inspection probe micropositioner, the connecting component has a support portion for supporting the inspection probe micropositioner, at least one positioning post is provided on the support portion, and each positioning post is arranged corresponding to one of the grooves, thereby positioning the inspection probe micropositioner, provided that the opening of the groove is provided towards the corresponding positioning post; the wafer-level aging inspection clamp fixture according to claim 18.

20. A circular upper sealing cover, further comprising the upper sealing cover located at the uppermost part of the PCB substrate and a plurality of stress-resistant components arranged at intervals along the circumferential direction of the upper sealing cover, and each of the stress-resistant components is a stress-resistant column passing through the PCB substrate and connected to the upper sealing cover, protruding from the bottom surface of the PCB substrate, and the height of the stress-resistant column protruding from the bottom surface of the PCB substrate is any numerical value between 0.1 and 0.2 mm, the stress-resistant column at least one spacer externally fitted on the stress-resistant column to adjust the height of the stress-resistant column protruding from the bottom surface of the PCB substrate, the wafer-level aging inspection clamp fixture according to claim 19.

21. A heat dissipation component attached to the PCB substrate, further comprising the heat dissipation component located between the first region and the second region for blocking heat generated in the first region, the wafer-level aging inspection clamp fixture according to any one of claims 18 to 20.

22. further comprising a structural component located at the uppermost part of the PCB substrate and connected to the upper sealing cover, and the wafer-level aging inspection clamp fixture a plurality of reinforcing components located at the uppermost part of the PCB substrate, further comprising a plurality of the reinforcing components respectively provided on the outer peripheral side of the structural component, the edge of the PCB substrate and the second region, the wafer-level aging inspection clamp fixture according to claim 20.

23. further comprising a heat sink for placing the wafer and a heating device, the heat sink and the heating device are located in the inspection chamber, the heat sink is stacked above the heating device, the heating device is electrically connected to an electrical assembly located below the lower sealing assembly, and the heating device a film heater layer having a resistance wire arranged uniformly and at least one power supply port connected to the resistance wire, provided on the side of the heat sink away from the wafer, and heating the wafer by the heat sink, the film heater layer It includes at least one set of first connection probe sets passing through the lower sealing cover assembly. One end of each of the first connection probe sets contacts the corresponding power supply port, and the other end passes through the lower sealing assembly and contacts the electrical assembly. Thereby, the electrical assembly supplies power to the film heater layer for heating, and it includes a connection assembly, the wafer-level aging inspection clamp fixture according to claim 17.

24. The film heater layer is a mica heating sheet or a ceramic heating sheet, The wafer-level aging inspection clamp fixture, A first heat insulation component located below the heat sink, and further includes a first heat insulation component in which the film heater layer and the first heat insulation component are integrally provided, The film heater layer is located on the side of the first heat insulation component close to the heat sink. A first through hole corresponding to the power supply port is opened in the first heat insulation component. Thereby, each of the first connection probe sets passes through the first through hole and contacts the power supply port, the wafer-level aging inspection clamp fixture according to claim 23.

25. A second heat insulation component located on the side of the first heat insulation component away from the heat sink, having a second through hole corresponding to the first through hole, and each of the first connection probe sets passes through the first through hole and the second through hole to contact the power supply port, the second heat insulation component, A ceramic plate located between the film heater layer and the heat sink for transferring the heat generated in the film heater layer to the heat sink, and further includes the wafer-level aging inspection clamp fixture according to claim 24.

26. At least one temperature sensor provided on the film heater layer for measuring the temperature of the film heater layer, At least one set of second connection probe sets, each of which corresponds to one of the temperature sensors, passes through the lower sealing cover assembly, one end contacts the temperature sensor, and the other end contacts the lifting mechanism, and further includes the wafer-level aging inspection clamp fixture according to any one of claims 23 to 25.

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