Parasitic Plasma Suppressor

Abstract

A parasitic plasma suppressor configured to suppress (or at least reduce) the generation of parasitic plasma outside of an intended region, such as suppressing the generation of parasitic plasma within a region adjacent to a pedestal within a processing chamber of a plasma-enhanced processing system.

Description

[Technical Field]

[0001] Incorporation by Reference A PCT Request Form is being filed contemporaneously herewith as part of this application. Each application to which this application claims benefit or priority as identified in the contemporaneously filed PCT Request Form is incorporated herein by reference in its entirety for all purposes. [Background technology]

[0002] Some semiconductor processing systems may utilize plasma when etching features into existing structures or depositing thin films, for example, on a substrate in a processing chamber. For example, plasma-enhanced chemical vapor deposition (PECVD) is a type of plasma deposition used to deposit thin films from a gaseous (e.g., vapor) state to a solid state on a substrate. During plasma etching, energetic and / or reactive species generated from one or more process gases may collide with and / or react with a surface to remove material, thereby etching the surface. During deposition, one or more process gases may be supplied to the processing chamber using a showerhead positioned above the substrate. Power (e.g., radio frequency (RF) power) may be supplied to the showerhead or electrodes to generate a plasma in a region adjacent to the substrate. Energetic electrons in the plasma ionize or dissociate reactant gases to generate more chemically reactive radicals, which react to form a thin film on the substrate. In this manner, the energy provided by the plasma may be used to lower the processing temperature, which provides thermal energy for the reaction. However, it should be noted that reactive gases elsewhere in the processing chamber may become excited and generate an undesired plasma (ie, a parasitic plasma).

[0003] The Background Art provided herein is intended to provide a general background to the present disclosure. The work of the named inventors, to the extent described in this Background Art, along with aspects described that would not normally be considered prior art at the time of filing, is not admitted expressly or implicitly as prior art to the present disclosure. Summary of the Invention

[0004] The accompanying drawings and the following description set forth the details of one or more embodiments of the subject matter described herein. Other features, aspects, and advantages will become apparent from the description, drawings, and claims. The following non-limiting examples are considered part of this disclosure, and other examples will become apparent from the entirety of this disclosure and the accompanying drawings.

[0005] Some embodiments provide an apparatus that can suppress (or at least reduce) the generation of parasitic plasma outside of intended areas, such as suppressing the generation of parasitic plasma in areas adjacent to a pedestal in a processing chamber of a plasma-enhanced processing system.

[0006] Additional aspects will be set forth in the following detailed description, and in part will be obvious from the disclosure, or may be learned by practice of the disclosed embodiments and / or claimed subject matter.

[0007] In one embodiment, an apparatus configured to mitigate parasitic plasma generation associated with a plasma-enhanced process includes an annular shield structure having a first inner surface, a first outer surface, a first upper surface, a first lower surface, and a plurality of openings. The first outer surface is radially opposite the first inner surface. The first upper surface extends between the first inner surface and the first outer surface. The first lower surface extends between the first inner surface and the first outer surface. The first lower surface is opposite the first upper surface in an axial direction that intersects the radial direction. A plurality of openings extend longitudinally between the first upper surface and the first lower surface. Each opening has a maximum dimension in a plane perpendicular to the axial direction that is less than or equal to about two times a plasma sheath thickness associated with the plasma-enhanced process.

[0008] In some embodiments, the largest dimension may extend in a radial direction.

[0009] In some embodiments, each opening may further comprise a minimum dimension in an axial or transaxial direction.

[0010] In some embodiments, the annular shield structure may comprise a plurality of annular shield rings, the annular shield rings being radially spaced apart from one another by a maximum dimension such that an opening is defined by the spacing between the annular shield rings.

[0011] In some embodiments, the annular shield structure may be formed as a unitary body and the opening may be defined as a through hole extending through the unitary body.

[0012] In some embodiments, the device may further include an annular support structure. The annular support structure may include a second inner surface and a second outer surface radially between the first and second inner surfaces such that the annular shield structure surrounds the annular support structure. The annular shield structure and the annular support structure may be removably coupled to one another.

[0013] In some embodiments, the annular shield structure and the annular support structure may be removably coupled to one another via a bayonet-style engagement.

[0014] In some embodiments, the bayonet-style engagement portion may include a plurality of protrusions extending radially from one of the first inner surface and the second outer surface and a plurality of slots defined in the other of the first inner surface and the second outer surface. Each slot may be configured to receive a corresponding one of the protrusions into a first slot portion in response to relative movement between the annular shield structure and the annular support structure in an axial direction. Each slot may further be configured to receive a corresponding protrusion into a second slot portion communicatively coupled to the first slot portion in response to relative rotation between the annular shield structure and the annular support structure in a first rotational direction about the axially extending axis.

[0015] In some embodiments, the plurality of protrusions may include at least three protrusions.

[0016] In some embodiments, the plurality of protrusions may include at least four protrusions.

[0017] In some embodiments, the annular shield structure may include a plurality of annular shield rings spaced apart from one another by a maximum radial dimension such that the openings are defined by the spacing between the annular shield rings, and the annular shield rings may each include a corresponding set of a plurality of slots.

[0018] In some embodiments, the top surfaces of each annular shield ring may be axially offset from one another.

[0019] In some embodiments, the top surface of the annular shield ring may be offset such that the top surface of the annular shield ring is at an increasing distance from a reference plane with increasing distance from the first inner surface, and the reference plane may include the top surface of the annular shield ring that is closest to the first inner surface.

[0020] In some embodiments, in the engaged state of the bayonet-style engagement portion, the corresponding slots of the corresponding sets may be configured to receive the same corresponding protrusions of the plurality of protrusions.

[0021] In some embodiments, the device may further include one or more retention structures configured to inhibit relative rotation between the annular shield structure and the annular support structure in a second rotational direction about the axis, which may be opposite to the first rotational direction.

[0022] In some embodiments, at least one of the slots may be further configured to receive a retention feature of the one or more retention features into a first slot portion of the at least one slot and a third slot portion of the at least one slot in response to relative movement between the retention feature and the at least one slot in the radial direction. The third slot portion of the at least one slot may be fluidly coupled between the at least one first slot portion and the second slot portion of the at least one slot. Furthermore, in an engaged state of the annular shield structure and the annular support structure and an engaged state of the retention feature and the at least one slot, the retention feature may be configured to retain a corresponding protrusion in the second slot portion of the at least one slot.

[0023] In some embodiments, the retention structure may include a body portion, a first protrusion extending from a first sidewall of the body portion, and a plurality of second protrusions extending from an underside of the body portion, the first protrusion, or the body portion and the first protrusion. When the retention structure and the at least one slot are engaged, the body may be disposed in a first slot portion of the at least one slot, the first protrusion may be disposed in one or both of a second slot portion of the at least one slot and a third slot portion of the at least one slot, and the second protrusions may be disposed in respective ones of the openings in the annular shield structure.

[0024] In some embodiments, the device may further include one or more retention structures. At least one of the slots may be further configured to receive a retention structure of the one or more retention structures into a first slot portion of the at least one slot and a third slot portion of the at least one slot in response to relative movement between the retention structure and the at least one slot in a radial direction. The third slot portion of the at least one slot may connect the at least one first slot portion to the at least one second slot portion. In an engaged state of the annular shield structure and the annular support structure and an engaged state of the retention structure and the at least one slot, the retention structure may be configured to retain a corresponding protrusion in the second slot portion of the at least one slot, and may inhibit relative rotation between the annular shield structure and the annular support structure in a second rotational direction about the axis. The second rotational direction may be opposite to the first rotational direction.

[0025] In some embodiments, the annular support structure may further include at least one inner protrusion extending from the second inner surface toward a central axis of the annular support structure. The central axis may extend in an axial direction. The at least one inner protrusion may include a third upper surface and a third lower surface axially opposite the third upper surface.

[0026] In some embodiments, the at least one internal projection may extend around at least a portion of the circumference of the annular support structure.

[0027] In some embodiments, the apparatus may further include a processing chamber and a pedestal. The processing chamber may include at least one sidewall. The pedestal may be supported within the processing chamber. The pedestal may include an outer boundary surface. The annular shield structure may be radially disposed between the outer boundary surface of the pedestal and the at least one sidewall.

[0028] In some embodiments, the apparatus may further include a showerhead supported within the processing chamber such that the showerhead axially faces the pedestal, and the showerhead may be configured to distribute one or more process gases to an area overlying the pedestal.

[0029] In some embodiments, the apparatus may further include at least one dielectric ring surrounding an outer boundary surface of the pedestal. The at least one dielectric ring may include a fourth inner surface radially opposite the outer boundary surface of the pedestal, a fourth outer surface radially opposite the fourth inner surface, a fourth upper surface extending between the fourth inner surface and the fourth outer surface, and a fourth lower surface extending between the fourth inner surface and the fourth outer surface. The fourth lower surface may be axially opposite the fourth upper surface. An annular shield structure may be disposed radially between the at least one dielectric ring and the at least one sidewall.

[0030] In some embodiments, the first inner surface may be spaced apart from the fourth outer surface by a dimension in a plane perpendicular to the axial direction that is less than or equal to about a plasma sheath thickness associated with plasma-enhanced processing.

[0031] In some embodiments, the apparatus may further include a focus ring disposed on an outer periphery of the upper surface of the pedestal. The focus ring may include a fifth inner surface, a sixth outer surface radially opposite the fifth inner surface, a fifth upper surface extending between the fifth inner surface and the fifth outer surface, and a fifth lower surface extending between the fifth inner surface and the fifth outer surface. The fifth lower surface may be axially opposite the fifth upper surface. In plan view, at least a portion of the fourth upper surface may be radially adjacent to the fifth upper surface.

[0032] In some embodiments, the first top surface may be disposed below a reference plane that includes the fifth top surface.

[0033] In some embodiments, the fourth upper surface may be disposed at or below a reference plane that includes the fifth lower surface.

[0034] In some embodiments, the third lower surface may abut the fourth upper surface.

[0035] In some embodiments, the second inner surface can abut the fourth outer surface.

[0036] In some embodiments, the first exterior surface can be spaced apart from the at least one sidewall.

[0037] In some embodiments, the plurality of protrusions may extend radially from the second outer surface, and the outermost boundary surface of at least one of the plurality of protrusions may be positioned closer to the at least one sidewall than the first outer surface, and the outermost boundary surface of the at least one protrusion may be spaced apart from the at least one sidewall.

[0038] In some embodiments, the apparatus may further include a shroud lining an inner surface of the at least one sidewall. The annular shield structure may be radially disposed between an outer boundary surface of the pedestal and the shroud. An outermost boundary surface of the at least one protrusion may be spaced apart from the shroud.

[0039] In some embodiments, the apparatus may further include a shroud lining an inner surface of the at least one sidewall, and the annular shield structure may be radially disposed between an outer boundary surface of the pedestal and the shroud.

[0040] In some embodiments, the shroud may comprise aluminum.

[0041] In some embodiments, the processing chamber may include an exhaust port configured to exhaust gases associated with plasma-enhanced processing. The gases may include by-product gases, unreacted process gases, or by-product gases and unreacted process gases. The opening may be configured to allow gases to flow from a first region overlying the pedestal to the exhaust port through a second region adjacent to the first region. The second region may be radially spaced from the pedestal. The opening may be further configured to suppress plasma generation in the second region.

[0042] In some embodiments, in connection with plasma-enhanced processing, the opening may be further configured to quench the flow of one or more energetic species through the opening.

[0043] In some embodiments, the pedestal can be configured to support a substrate in the processing chamber, and the substrate can have a maximum dimension in a direction perpendicular to the axial direction, and a maximum dimension between opposite portions of the first inner surface in the direction perpendicular to the axial direction can be greater than the maximum dimension of the substrate.

[0044] In some embodiments, the first inner surface may abut the second outer surface.

[0045] In some embodiments, the maximum dimension of the annular shield structure in the axial direction may be greater than the maximum dimension of the annular support structure in the axial direction.

[0046] In some embodiments, the annular shield structure may include a ceramic material.

[0047] In some embodiments, the annular support structure may comprise a ceramic material.

[0048] The foregoing general description and the following detailed description are exemplary and explanatory and are intended to provide further explanation of the claimed subject matter. [Brief explanation of the drawings]

[0049] The accompanying drawings illustrate various embodiments disclosed herein, by way of example and not by way of limitation, and in which like elements are numbered like.

[0050] [Figure 1] 1 is a schematic diagram illustrating a substrate processing system that can be utilized to process wafers as well as suppress (or reduce) parasitic plasma, according to some embodiments.

[0051] [Figure 2] 2 is a schematic partial cross-sectional view illustrating the system of FIG. 1 in accordance with some embodiments.

[0052] [Figure 3] 3 is a schematic enlarged view of a portion of FIG. 2, in accordance with some embodiments.

[0053] [Figure 4] 2 is a schematic diagram illustrating the flow of one or more process gases in the system of FIG. 1 according to some embodiments.

[0054] [Figure 5A] 1 is a schematic perspective view illustrating an annular shield structure, according to some embodiments.

[0055] [Figure 5B] 5B is a schematic partial plan view illustrating the annular shield structure of FIG. 5A, according to some embodiments.

[0056] [Figure 6] 5B is a schematic partial side view illustrating the annular shield structure of FIG. 5A, according to some embodiments.

[0057] [Figure 7] 1 is a schematic plan view illustrating a plurality of concentrically aligned annular shield rings, according to some embodiments.

[0058] [Figure 8] 1 is a schematic plan view illustrating an annular shield structure, according to some embodiments.

[0059] [Figure 9A] 9 is a schematic partial side view illustrating the annular shield structure of FIG. 8, according to some embodiments. [Figure 9B] 9 is a schematic partial side view illustrating the annular shield structure of FIG. 8, according to some embodiments.

[0060] [Figure 10] 1 is a schematic perspective view illustrating an annular support structure, according to some embodiments.

[0061] [Figure 11] 11 is a schematic bottom view of a portion of the annular support structure of FIG. 10, according to some embodiments.

[0062] [Figure 12] 12 is a schematic cross-sectional view illustrating the annular support structure of FIG. 10 taken along section line 12-12, according to some embodiments.

[0063] [Figure 13A] 1 is a schematic plan view illustrating a portion of a partial assembly between an annular support structure and a plurality of annular shield rings, according to some embodiments.

[0064] [Figure 13B] 1 is a schematic plan view illustrating a portion of an assembly between an annular support structure, a plurality of annular shield rings, and a retaining structure, according to some embodiments.

[0065] [Figure 14] FIG. 13C is a schematic partial side view illustrating the assembly of FIG. 13B, according to some embodiments.

[0066] [Figure 15] 1 is a schematic perspective view illustrating a retention structure, according to some embodiments.

[0067] [Figure 16] 10 is a schematic partial side view illustrating a partial assembly between two annular shield rings and a retaining structure, according to some embodiments.

[0068] [Figure 17A] 1A and 1B are diagrams for comparing parasitic plasma generation in a conventional substrate processing system and a substrate processing system according to some embodiments. [Figure 17B] 1A and 1B are diagrams for comparing parasitic plasma generation in a conventional substrate processing system and a substrate processing system according to some embodiments.

[0069] [Figure 18] 1 is a schematic diagram illustrating a multi-station processing tool, according to some embodiments. DETAILED DESCRIPTION OF THE INVENTION

[0070] In the following description, numerous specific details are set forth to provide a thorough understanding of various embodiments. The disclosed embodiments may be practiced without some or all of these specific details. Additionally, detailed descriptions of well-known process operations are omitted to avoid unnecessarily obscuring the disclosed embodiments. While the disclosed embodiments are described in connection with specific embodiments, it should be understood that they are not intended to limit the disclosed embodiments.

[0071] The terms "semiconductor wafer," "wafer," "substrate," "wafer substrate," and "partially fabricated integrated circuit" are used interchangeably herein. Those skilled in the art will appreciate that the term "partially fabricated integrated circuit" can refer to a silicon wafer during any of the many stages of integrated circuit manufacturing. Wafers or substrates used in the semiconductor device industry typically have diameters of 200 mm, 300 mm, or 450 mm. In addition to semiconductor wafers, other workpieces that may utilize the disclosed embodiments include a variety of articles, such as printed circuit boards, magnetic recording media, magnetic recording sensors, mirrors, optical elements, micromechanical elements, and the like.

[0072] background As previously mentioned, reactant gases at locations within a processing chamber other than regions located above a processing area on a substrate (e.g., a deposition area, an etching area, etc.) can be accidentally excited to generate a parasitic plasma. The generation of parasitic plasma not only reduces the energy efficiency associated with plasma-enhanced processes (e.g., PECVD of silicon nitride), but can also cause various other problems during plasma processing, such as particle contamination, spatial and temporal non-uniformity, thermal shock, premature failure of chamber components, arcing, and / or the like. It is also recognized that reduced energy efficiency, due at least in part to the generation of parasitic plasma, can lead to reduced deposition or etching rates. Reduced deposition and / or etching rates can increase production time and, therefore, production costs. Accordingly, various embodiments are directed to a parasitic plasma suppressor configured to prevent or at least reduce the generation of parasitic plasma (e.g., reduce the generation of parasitic plasma in an area adjacent to a pedestal within a processing chamber). For example, in some cases, the parasitic plasma suppressor may be configured to suppress the generation of parasitic plasma between the periphery (or outer boundary) of the pedestal and an inner surface of the processing chamber (such as the inner surface of a shroud (or liner) lining at least a portion of the processing chamber). In this manner, various embodiments may enable increased power delivered to a region overlying the processing area on the substrate by reducing power diverted to peripheral areas within the processing chamber. This increased power may enable increased deposition and / or etch rates. Additionally, suppression of parasitic plasma in undesired areas adjacent the pedestal may prevent (or at least reduce) particle contamination, spatial and temporal non-uniformities, thermal shock, premature failure of chamber components, arcing, and / or the like associated with plasma-enhanced processing.

[0073] System for parasitic plasma suppression. Figure 1 is a schematic diagram illustrating a substrate processing system (or system) 100 that may be utilized to process a wafer 101 as well as suppress (or reduce) parasitic plasma, according to some embodiments. Figure 2 is a schematic partial cross-sectional view illustrating the system of Figure 1, according to some embodiments. Figure 3 is a schematic enlarged view illustrating a portion of Figure 2, according to some embodiments. Figure 4 is a schematic diagram illustrating the flow of one or more process gases in the system of Figure 1, according to some embodiments.

[0074] The system 100 includes a chamber 103, which in some examples may be divided into an upper chamber portion and a lower chamber portion. A central pillar is configured to support a pedestal 105 when the surface of the wafer 101 is being processed (e.g., when a film is being formed on the surface of the wafer 101). In some embodiments, the pedestal 105 may be or include a powered electrode (e.g., powered electrode 201). Accordingly, the pedestal 105 may be electrically connected to a power source 107 via a matching network 109. To this end, the power source 107 may be controlled by a control module (or controller) 111. In some embodiments, power may be supplied to a showerhead 113 instead of (or in addition to) the pedestal 105. The control module 111 is configured to operate the system 100 by executing one or more sequences of one or more instructions that define at least one process recipe. Thus, the control module 111 may set various operational inputs to define a process recipe, such as power levels, timing parameters, process gases, mechanical movement of the wafer 101, height of the wafer 101 above the pedestal 105, etc.

[0075] According to some embodiments, the central pillar may include a lift pin mechanism operably coupled to the lift pins. The lift pin mechanism, and therefore the lift pins, may be controlled by a lift pin control signal, for example, from the control module 111. The lift pins may be used to lift the wafer 101 from the pedestal 105 to allow an end effector to lift the wafer 101, and to lower the wafer 101 after it has been placed by the end effector. In some embodiments, the lift pins may be part of the central pillar. To this end, the chamber 103 may include a chamber transfer port 115 to allow an end effector to introduce or remove the wafer 101 from the chamber 103. In some cases, relative movement between the pedestal 105 and the showerhead 113 may be utilized to provide controlled separation of the wafer 101 from the surface of the showerhead 113 facing the wafer 101. The chamber 103 may also include openings 103a and 103b through which portions of the pedestal 105 and showerhead 113 (such as stem portions of the pedestal 105 and showerhead 113) pass.

[0076] The system 100 further includes a gas supply manifold 117 fluidly connected to a gas source 119 (e.g., a gas chemistry supply from a facility). Depending on the process being performed, the control module 111 may control the supply of process gases from the gas source 119 to the showerhead 113 via the gas supply manifold 117. The process gases may or may not be premixed. To ensure that appropriate process gases are supplied during the deposition and plasma treatment phases of the process, appropriate valving and mass flow control mechanisms may be utilized and controlled via the control module 111. In this manner, selected process gases may flow into the showerhead 113 and be distributed within a process region 121 defined between a surface of the showerhead 113 facing the wafer 101 and the upper surface of the wafer 101. In some embodiments, the wafer 101 may rest on a carrier ring, which may be supported on or by a pedestal 105.

[0077] In various embodiments, process gases exit the chamber 103 through an exhaust port (or outlet) 123, for example, fluidly connected to a vacuum pump 125. The vacuum pump 125 may be a single-stage or two-stage mechanical dry pump and / or a turbomolecular pump. In this manner, process gases may be drawn from the chamber 103 to maintain an appropriate low pressure within the chamber. To this end, a closed-loop flow restriction device (such as a throttle valve or a pendulum valve) may be controlled via the control module 111 to further ensure an appropriate low pressure within the chamber 103.

[0078] According to some embodiments, a carrier plate may be received on the pedestal 105. The carrier plate may be configured to support and hold the wafer 101 when received thereon. In some examples, the carrier plate may be a removable unit (or structure) that can be moved into and out of the chamber 103. For example, the wafer 101 may be pre-loaded on the carrier plate outside the chamber 103, and the carrier plate with the wafer 101 loaded thereon may be transported into the chamber 103. In this manner, the carrier plate with the wafer 101 loaded thereon may be received on the pedestal 105. In some embodiments, the carrier plate may include a substrate support region defined in a central region and may extend a surface diameter of the upper surface of the pedestal 105. The surface diameter may be at least equal to (or approximately equal to) the diameter of the wafer 101 received on the carrier plate.

[0079] The pedestal 105, in some embodiments, may be connected to an electrostatic chuck (ESC) control. A voltage applied to the pedestal 105 through the ESC control may generate a clamping or declamping force that is utilized to clamp or declamp the carrier plate to or from the upper surface of the pedestal 105. In some embodiments, the voltage for clamping or declamping may be provided in response to a signal from the control module 111. Additionally, the control module 111 may be configured to control a lift pin mechanism such that, when the lift pins are actuated, the carrier plate, and therefore the wafer 101, may be lifted from the upper surface of the pedestal 105.

[0080] As seen in FIGS. 1-3 , focus ring 127 may be disposed on the periphery (or peripheral region) of pedestal 105 and may have upper surface 127a and lower surface 127b. Furthermore, focus ring 127 may be a quartz ring having inner surface 127c facing the plasma generated in processing region (or area) 121. While illustrated as a rectangular area, processing region 121 may be more of a fuzzy, cloud-like region in which plasma may be generated. In some cases, focus ring 127 may be part of an assembly (or group of components) surrounding pedestal 105. The assembly may include multiple dielectric rings (such as dielectric rings 203 and 205), which may be disposed below focus ring 127. In some embodiments, dielectric rings 203 and 205 may be electrically floating.

[0081] The dielectric rings 203 and 205 may be formed of a ceramic material (such as alumina or aluminum nitride), although embodiments are not limited thereto. In some embodiments, the dielectric rings 203 and 205 may be formed of the same material or different materials. To this end, the dielectric rings 203 and 205 may have respective annular shapes with corresponding inner diameters that are larger than the outer boundary of the pedestal 105. The dielectric ring 205 may surround the dielectric ring 203 and thus have an inner diameter that is larger than the outer diameter of the dielectric ring 203. The dielectric ring 203 may include a protruding portion 203p configured to contact the pedestal 105. For example, the protruding portion 203p may be detachably coupled to the pedestal 105. Note that the outer diameter of the focus ring 127 may be smaller than the outer diameters of the dielectric rings 203 and 205. Thus, one or both of upper surfaces 203a and 205a of dielectric rings 203 and 205 may be exposed from focus ring 127. For example, in a plan view, at least a portion of at least one of upper surfaces 203a and 205a of dielectric rings 203 and 205 may be adjacent to upper surface 127a of focus ring 127. Additionally, upper surfaces 203a and 205a of dielectric rings 203 and 205 may be disposed on or below reference surface 315 that includes (e.g., abuts) lower surface 127b of focus ring 127. As will become more apparent below, upper surfaces 203a and 205a of dielectric rings 203 and 205 may provide mating surfaces (or mounting surfaces) upon which one or more other components may be supported. While dielectric rings 203 and 205 are illustrated as abutting each other, dielectric rings 203 and 205 may be spaced apart from each other in some embodiments. However, dielectric ring 205 may be coupled (e.g., detachably coupled) to dielectric ring 203 and / or pedestal 105. In some embodiments, one or both of dielectric rings 203 and / or 205 may be omitted.

[0082] The system 100 may further include a shroud (or liner) 207 lining one or more interior surfaces of the chamber 103. The shroud 207 may be formed of a metal or metal alloy (such as aluminum or an aluminum alloy), although embodiments are not limited thereto. The shroud 207 may be configured to be removed during repair of the chamber 103 to prevent (or at least reduce) the buildup of material (e.g., metallic material) on the walls of the chamber 103. To this end, the shroud 207 may be configured to reduce heat transfer to the walls of the chamber 103 to help stabilize the internal temperature of the chamber 103. The shroud 207 may therefore function as a sacrificial layer configured to prevent (or reduce) damage to the chamber 103.

[0083] According to various embodiments, the generation of parasitic plasma outside of an area overlying an intended deposition or etching area on wafer 101 (e.g., outside processing region 121) may be prevented or at least reduced by a parasitic plasma suppressor (or skirt) (e.g., parasitic plasma suppressor 129). Hereinafter, parasitic plasma suppressor 129 will be referred to as suppressor 129. Suppressor 129 may be retrofitted into an existing substrate processing system and / or implemented as part of an initial substrate processing system installation. For example, suppressor 129 may be supported from pedestal 105, e.g., via annular support structure 209. In some cases, annular support structure 209 may be supported by or from pedestal 105, such as by being supported from one or more shield structures (e.g., one or both of dielectric rings 203 and 205) coupled to pedestal 105 or supported directly from pedestal 105 itself. An example of an annular support structure is described in more detail in connection with Figures 10-12. In some cases, suppressor 129 may be supported by or from chamber 103, shroud 207, and / or any other suitable structure within (or associated with) chamber 103.

[0084] The suppressor 129 is RF powered, grounded, and / or configured to suppress the generation of parasitic plasma near floating surfaces (e.g., near the pedestal 105, the electrode 201 of the pedestal 105, the shroud 207, the chamber 103, etc.) while allowing gases (e.g., process gases, by-product gases, unreacted gases, etc.) to be exhausted from the chamber 103 through the exhaust port 123 by flowing from the processing region 121 past the pedestal 105, as shown, for example, in FIG. 4. Accordingly, the suppressor 129 may include a plurality of openings (e.g., opening 303) extending vertically between the upper surface 129 a and the lower surface 129 b of the suppressor 129 to allow the passage of gases from the processing region 121 to the exhaust port 123, e.g., via the flow paths 401 and 403. As will become more apparent, the configuration of openings 303 may be utilized to suppress parasitic plasma generation in one or more regions disposed between pedestal 105 and surrounding chamber components (e.g., shroud 207). It should also be noted that gases from processing region 121 may flow to exhaust port 123 through a gap 305 (or choke point) between suppressor 129 and shroud 207 lining one or more interior walls of chamber 103. This is illustrated in FIG. 4 by flow path 405. Some examples of suppressors are described in detail in connection with at least FIGS. 2, 3, 5A, 5B, 6-8, 9A, and 9B. It should be generally noted, however, that suppressor 129 may be formed with multiple annular shield rings (e.g., annular shield rings 129_1, 129_2, ..., 129_n, where n is a natural number greater than or equal to 2). The multiple annular shield rings may be spaced apart (e.g., radially spaced apart) from one another to form openings 303. In some implementations, suppressor 129 may be formed as a unitary body with openings 303 formed as passages through the unitary body, although other embodiments are contemplated.

[0085] Parasitic Plasma Suppressor Figure 5A is a schematic perspective view illustrating an annular shield ring, according to some embodiments. Figure 5B is a schematic partial plan view illustrating the annular shield structure of Figure 5A, according to some embodiments. Figure 6 is a schematic partial side view illustrating the annular shield ring of Figure 5A, according to some embodiments. Figure 7 is a schematic plan view illustrating multiple concentrically aligned annular shield rings, according to some embodiments. Figure 8 is a schematic plan view illustrating an annular shield structure, according to some embodiments. Figures 9A and 9B are schematic partial side views illustrating the annular shield structure of Figure 8, according to some embodiments.

[0086] 1, 2, 3, 5A, 5B, 6, and 7, suppressor 129 may be defined as (or by) an annular shield structure. The annular shield structure may include multiple annular shield rings (such as annular shield rings 129_1, 129_2, . . . , 129_n, where n is a natural number greater than or equal to 2). In some cases, suppressor 129 includes three annular shield rings, although embodiments are not limited thereto. For example, suppressor 129 may include two annular shield rings or four or more (four, five, six, seven, etc.) annular shield rings. Annular shield rings 129_1, 129_2, . . . , 129_n may be formed of or include a dielectric material (such as a ceramic material (e.g., alumina or aluminum nitride)) in some embodiments, although embodiments are not limited thereto. In some examples, the annular shield rings 129_1, 129_2, ..., 129_n may be formed of a first material, such as a metal or metal alloy (e.g., aluminum or an aluminum alloy), and coated with a second material, such as a dielectric material. To this end, the material of each annular shield ring 129_1, 129_2, ..., 129_n may be the same as or different from at least one other annular shield ring among the annular shield rings 129_1, 129_2, ..., 129_n.

[0087] According to some embodiments, the annular shield rings 129_1, 129_2, ..., 129_n may be concentrically aligned about an axis 701, which may be, for example, a central axis extending in an axial direction parallel to the z-axis direction (shown in FIG. 7 as extending perpendicular to the page). When supported from the pedestal 105, the axis 701 may be aligned (or substantially aligned) with or correspond to the axis 131 of FIG. 1. Thus, the axis 131 may be, for example, a central axis extending in an axial direction parallel to the z-axis direction shown in FIG. 1. Except for having different dimensions, the annular shield rings 129_1, 129_2, ..., 129_n may be similarly configured, although embodiments are not limited thereto. Some examples of annular shield rings are described in detail in connection with FIGS. 5A, 5B, 6, and 7.

[0088] 5A, 5B, 6, and 7 with continuing reference to FIGS. 1-3, annular shield ring 500 includes an upper surface 501, a lower surface 503, an inner surface 505, and an outer surface 507. A width 509 of annular shield ring 500 may extend radially between inner surface 505 and outer surface 507, where the radial direction may extend perpendicular to a central axis 511. A length 512 of annular shield ring 500 may extend axially between upper surface 501 and lower surface 503, where the axial direction may extend parallel to central axis 511. In the assembled configuration of system 100, central axis 511 may coincide (or substantially coincide) with axis 131. In some cases, annular shield ring 500 may include multiple engagement features (such as bayonet-style engagement features 513), although embodiments are not limited thereto. For example, the engagement features of the annular shield ring 500 may be provided as through holes, threaded through holes, blind holes, threaded blind holes, protrusions, pins, hooks, bolts, screws, studs, anchors, etc. It is also contemplated that a combination of two or more different types of engagement features may be used in connection with the annular shield ring 500. For convenience, the engagement features of the annular shield ring 500 will hereinafter be assumed to be of the same type and will be described as bayonet-style engagement features 513.

[0089] 5A , the annular shield ring 500 includes four bayonet-type engagement shapes 513 (two of which are identified), although embodiments are not limited thereto. For example, the annular shield ring 500 may include fewer than four bayonet-type engagement shapes (such as three bayonet-type engagement shapes) or more than four bayonet-type engagement shapes (such as five, six, etc. bayonet-type engagement shapes). According to some embodiments, the bayonet-type engagement shapes 513 may be circumferentially spaced apart from one another by an angular pitch 515, which may be determined according to Equation 1. For example, as seen in FIG. 5A , the annular shield ring 500 may include four bayonet-type engagement shapes 513, in which case the angular pitch 515 may be 90° (or approximately 90°), although embodiments are not limited thereto. For example, any suitable circumferential spacing of the bayonet-type engagement shapes 513 may be used.

number

[0090] As will become more apparent below, the bayonet-type engagement features 513 are configured to interlock with corresponding mating features on the annular support structure 209. Engagement between the bayonet-type engagement features of the annular shield rings 129_1, 129_2, ..., 129_n and the corresponding mating features on the annular support structure 209 may support the annular shield rings 129_1, 129_2, ..., 129_n about the outer boundary of the pedestal 105 within the chamber 103, and thus at least constrain displacement of the suppressor 129 along the axis 131. In some embodiments, the annular support structure 209 may be omitted, and the bayonet-type engagement features 513 may interlock with corresponding mating features on the chamber 103, the pedestal 105, the dielectric ring 203, the dielectric ring 205, and / or any other suitable component of the system 100.

[0091] With reference to FIG. 6 , the bayonet-style engagement feature 513 may be defined as a slot 601 extending through the annular shield ring 500. The slot 601 may be configured as a J-shaped slot (as shown in FIG. 6 ), although embodiments are not limited thereto. Thus, the slot 601 may have any suitable geometric configuration. In some embodiments, the slot 601 may include a first portion 601 a, a second portion 601 b, and a third portion 601 c. The first portion 601 a may include an opening 603 in the top surface 501. The third portion 601 c may include a mating surface (or mounting surface) 605. The second portion 601 b may extend between and fluidly couple the third portion 601 c and the first portion 601 a. In some embodiments, the second portion 601b may include a protruding portion 607 having an abutment surface 609, and the third portion 601c may include a distal surface 611. Additionally, in some embodiments, the first portion 601a, the second portion 601b, and the third portion 601c may share a bottom surface 613.

[0092] 7, annular shield rings 129_1, 129_2, ..., 129_n have inner and outer diameters. For example, annular shield ring 129_1 has an inner diameter 703 and an outer diameter 705, annular shield ring 129_2 has an inner diameter 707 and an outer diameter 709, and annular shield ring 129_n has an inner diameter 711 and an outer diameter 713. As shown in the figure, the outer diameter 713 is larger than the inner diameter 711, which is larger than the outer diameter 709. The outer diameter 709 is larger than the inner diameter 707, which is larger than the outer diameter 705. Furthermore, the outer diameter 705 is larger than the inner diameter 703, and the inner diameter 703 is larger than the largest dimension (e.g., outer diameter) of an adjacent component (such as the dielectric ring 205, the dielectric ring 203, or the pedestal 105). It is at least apparent that the inner diameter 703 and the maximum dimension of the adjacent component (e.g., the dielectric ring 205) may be larger than the maximum dimension (e.g., the diameter) of the wafer 101. In some embodiments, the inner surface 505_n of the annular shield ring 129_n may be spaced apart from the outer surface of the adjacent component (e.g., the outer surface 205b of the dielectric ring 205) by a dimension 301, which may extend in a radial direction (e.g., a direction parallel to the X-axis direction shown in FIG. 3).

[0093] As previously alluded to, the openings 303 may be defined by the spacing between adjacent annular shield rings (e.g., the spacing between annular shield ring 129_1 and annular shield ring 129_2, the spacing between annular shield ring 129_2 and annular shield ring 129_n, etc.). As such, the maximum dimension (e.g., radial width) of the openings 303 may be defined by half (or approximately half) of the difference between the inner and outer diameters of adjacent annular shield rings. For example, the first maximum dimension of the first opening 303a between the annular shield ring 129_1 and the annular shield ring 129_2 may be equal to (or may be substantially equal to) approximately half the difference between the inner diameter 707 and the outer diameter 705. The second maximum dimension of the second opening 303b between the annular shield ring 129_2 and the annular shield ring 129_n may be equal to (or may be substantially equal to) approximately half the difference between the inner diameter 711 and the outer diameter 709. In some embodiments, the first and second maximum dimensions may be equal to one another (or may be substantially equal to one another), although embodiments are not limited thereto. For ease of description, the first and second maximum dimensions will be equal to one another and referred to as maximum dimension 307 (see FIG. 3). It should also be noted that maximum dimension 307 may be equal to or greater than approximately maximum radial dimension 309 (see FIG. 3) between the outer boundary of suppressor 129 and the inner surface of shroud 207 or chamber 103. It is also contemplated that maximum dimension 307 may be equal to or greater than approximately dimension 301.

[0094] According to various embodiments, the maximum dimensions 307 and 309 may be configured to allow sufficient flow (or flow conductance) of gas from the processing region 121 to the exhaust port 123, as well as to suppress the generation of parasitic plasma in one or more regions between the pedestal 105 and surrounding components (e.g., the chamber 103 and / or the shroud 207). For example, during a plasma-enhanced process performed by the system 100, the chamber 103 may form a vacuum enclosure that at least partially defines the processing region 121. To this end, the showerhead 113 may be used to deliver one or more process gases (hereinafter referred to as "process gases") to the processing region 121 above the wafer 101 supported by the pedestal 105. The process gases may be heated and / or supplied with energy (e.g., RF energy from an electric field generated between the pedestal 105 and the showerhead 113) that at least partially dissociates molecules of the process gases to form a plasma in the processing region 121. Under these conditions, electrons, ions, excited neutral atoms, and molecules may be formed during the discharge and / or upon electron impact with solid surfaces. As a result, several secondary particles may be generated, including, for example, photons, electrons, atoms, and ions. These species carry energy from the processing region 121 in various forms, such as kinetic, electrical, and chemical forms, and their acceleration in the transition region between the unperturbed plasma in the processing region 121 and an adjacent surface (such as the top surface of the wafer 101) induces modification and restructuring. This transition region is the plasma sheath 311, which accumulates a net charge relative to the unperturbed plasma in the processing region 121 to offset the opposite charge on the adjacent surface. In this way, the plasma sheath 311 maintains an overall current balance such that a plasma typically cannot form or be sustained in the processing region 121 if sufficient space is not provided for the formation of the plasma sheath 311. This general concept may be applied to the structural configuration of the opening 303 and gap 305 of the suppressor 129.For example, dimensions 301 and maxima 307 and 309 may be configured to reduce the likelihood of a plasma sheath forming near opening 303, annular shield rings 129_1, 129_2, ..., 129_n, shroud 207, and / or the inner wall of chamber 103.

[0095] According to various embodiments, the radial dimension 301 (e.g., parallel to the X-axis direction shown in FIG. 3 ), the maximum dimension 307 of the opening 303, and the maximum dimension 309 of the gap 305 may be several times the sheath thickness 313 of the plasma sheath 311. In some embodiments, the sheath thickness 313 may be between about 1 mm and about 3 mm (between about 1 mm and about 1.5 mm, e.g., between about 2.5 mm and about 3 mm, e.g., between about 1.25 mm and about 2.75 mm). It is also contemplated that the dimension 301, the maximum dimension 307, and / or the maximum dimension 309 may be smaller than the sheath thickness 313, as long as sufficient flow (or flow conductance) of gas from the processing region 121 to the exhaust port 123 can be achieved.

[0096] As previously mentioned, the plasma sheath 311 is a layer with a higher density of positive ions and neutrons that offset the opposite (negative) charge on the surface of materials adjacent to the plasma in the processing region 121. Thus, optical emission from the plasma sheath 311 may be less intense than the plasma in the processing region 121 due to fewer excitation-relaxation collisions occurring due to the fewer electrons present. Therefore, the plasma sheath 311 may be considered a dark boundary region (or dark space), which forms a potential barrier to prevent or reduce electron diffusion from the plasma in the processing region 121. In some examples, one or both of the maximum radial dimensions 307 and 309 may be approximately two times or less than the sheath thickness 313, although embodiments are not limited thereto. In some cases, the maximum dimension 309 may be approximately equal to or less than the maximum dimension 307. Additionally, the dimension 301 may be equal to (or substantially equal to) half the sheath thickness 313, although embodiments are not limited thereto. In such a configuration, there is unlikely to be enough space for a plasma sheath to form near the opening 303, the annular shield rings 129_1, 129_2, . . . , 129_n, the shroud 207, and / or the interior walls of the chamber 103. However, it should be noted that the sheath thickness 313 depends on various processing conditions of the system 100 (such as temperature, pressure, RF power, RF frequency, width of the processing region 121, etc.). Therefore, the sheath thickness 313 may be reasonably approximated according to the Debye length associated with the plasma-enhanced process used in the system 100. The Debye length may be reasonably approximated by Equation 2:

number

[0097] Additionally, the openings 303 may have respective minimum dimensions extending in an axial direction (e.g., parallel to the Z-axis direction in FIG. 2 ). Similar to the respective maximum dimensions of the radially extending openings 303, the first and second maximum dimensions of the axial openings 303a and 303b may be equal (or substantially equal) to one another, although embodiments are not limited thereto. For ease of description, the first and second minimum dimensions are equal and will be referred to as the minimum dimension 211 shown in FIG. 2 . The minimum dimension 211 of the openings 303 may be configured to promote energy depletion of radical species (or excited species) escaping from the processing region 121. For example, appropriately sizing the minimum axial dimension 211 increases the likelihood that a sufficient number of collisions will occur for radical species as they travel through the flow path provided by the openings 303. These collisions gradually deenergize (or quench) the radical species, reducing the likelihood of plasma persisting near the opening 303, the annular shield rings 129_1, 129_2, . . . , 129_n, the shroud 207, and / or the chamber 103. The same may be true with respect to the flow path provided by the gap 305.

[0098] Although top surface 129 a of suppressor 129 (and thus top surface 501 of each of annular shield rings 129_1, 129_2, ..., 129_n) is illustrated in FIGS. 2 and 3 as being coplanar with reference surface 317, which includes (e.g., abuts) top surface 127 a of focus ring 127, embodiments are not limited thereto. For example, top surface 129 a of suppressor 129 may be axially disposed above or below reference surface 317. In some embodiments, top surface 501 of each of annular shield rings 129_1, 129_2, ..., 129_n may be gradually offset from reference surface 317 with increasing radial distance from axis 131 (e.g., with increasing radial distance from pedestal 105). For example, annular shield ring 129_n may be positioned axially closer to the reference surface 317 than annular shield ring 129_2, which may be positioned axially closer to the reference surface 317 than annular shield ring 129_1. One such embodiment is shown in FIG. 17B . It is also contemplated that the reverse may be true. For example, annular shield ring 129_n may be positioned axially farther from the reference surface 317 than annular shield ring 129_2, which may be axially farther from the reference surface 317 than annular shield ring 129_1. In some implementations, any axial offset may exist between the top surfaces 501 of adjacent annular shield rings among annular shield rings 129_1, 129_2, . . . , 129_n. Additionally, although the annular shield rings 129_1, 129_2, ..., 129_n are shown as having equal lengths 512 (see FIGS. 3 and 5A) extending in an axial direction (which may be parallel to the Z-axis direction in FIG. 3), embodiments are not limited thereto. In some examples, the lengths 512 of each of the annular shield rings 129_1, 129_2, ..., 129_n may differ from one another. According to some embodiments, the difference between the lengths 512 of each of the annular shield rings 129_1, 129_2, ..., 129_n may be arbitrary.

[0099] While the annular shield rings 129_1, 129_2, ..., 129_n have been described as being separate structures, it is also contemplated that the annular shield rings 129_1, 129_2, ..., 129_n may form features of a monolithic structure. For example, one or more additive manufacturing techniques may be used to form the annular shield rings 129_1, 129_2, ..., 129_n as a single body (or a single molding). In this manner, one or more connectors may be formed on and / or between the annular shield rings 129_1, 129_2, ..., 129_n during the fabrication of the monolithic structure. For example, the one or more connectors may extend radially between adjacent annular shield rings among the annular shield rings 129_1, 129_2, ..., 129_n, although embodiments are not limited thereto. In some examples, the monolithic structure may be additively manufactured with direct laser ceramic sintering. As another example, the monolithic structure may be formed using direct laser metal sintering and, in some cases, coated with a dielectric material, such as a ceramic. It is also contemplated that the monolithic structure may be machined from solid stock, such as a billet material, and, in some implementations, coated with another material, such as a dielectric material.

[0100] In some embodiments, the parasitic plasma suppressor 129 may be configured as a single annular shield structure (or "structure") 800, such as that shown in FIGS. 8 and 9A , rather than being formed with multiple annular shield rings (such as annular shield rings 129_1, 129_2, . . . , 129_n). The structure 800 includes an upper surface 801, a lower surface 803, an inner surface 805, and an outer surface 807. A width 809 of the structure 800 in the radial direction may extend between the inner surface 805, which has an inner diameter 811, and the outer surface 807, which has an outer diameter 813. The radial direction extends perpendicular to a central axis 815, which is shown in FIG. 8 as extending perpendicular to the page. The width 809 may correspond to one-half the difference between the inner diameter 811 and the outer diameter 813.

[0101] Similar to annular shield ring 500, structure 800 includes a plurality of bayonet-type engagement features (e.g., bayonet-type engagement features 817) that may interlock with corresponding mating features on annular support structure 209. As such, bayonet-type engagement features 817 may be structurally similar to at least bayonet-type engagement features 513 described in connection with FIGS. 5A, 5B, and 6. As seen in FIG. 8, structure 800 includes four bayonet-type engagement features 817 (two of which are identified), although embodiments are not so limited. For example, structure 800 may include fewer than four bayonet-type engagement features (e.g., three bayonet-type engagement features) or more than four bayonet-type engagement features (e.g., five, six, seven, etc. bayonet-type engagement features).

[0102] According to various embodiments, the structure 800 includes a plurality of openings (e.g., opening 819) extending vertically between the upper surface 801 and the lower surface 803. The openings 819 may be configured not only to allow sufficient flow (or flow conductance) of gas from the processing region 121 to the exhaust port 123, but also to suppress the generation of parasitic plasma in one or more regions disposed between the pedestal 105 and surrounding components (e.g., the chamber 103, the shroud 207, etc.). In this manner, the openings 819 may correspond to the openings 303 illustrated in FIGS. 2 and 3. Accordingly, the openings 819 may have a maximum dimension (e.g., maximum diameter) 821, which may be similar in size to the maximum dimension 307 to reduce the likelihood that there is sufficient space for the formation of a plasma sheath (and thus, a parasitic plasma) near the openings 819, the structure 800, the shroud 207, and / or the chamber 103. 9A , the opening 819 may have a minimum dimension 823 in an axial direction extending parallel to the central axis 815. The minimum dimension 823 may be sized similarly to the minimum dimension 211 to facilitate energy depletion of radical species that exit the processing region 121 and pass through at least one flow path provided by the opening 819 en route to the exhaust port 123.

[0103] In some embodiments, the openings 819 may be axially tilted / slanted at an angle 825 relative to the lower surface 803 and the upper surface 801 of the structure 800 such that the leading edge 819a of each of the openings 819 is circumferentially offset from the corresponding trailing edge 819b of the openings 819, such as that shown in FIG. 9B . In this manner, adjacent openings 819 may at least partially overlap each other in the axial direction, although embodiments are not limited thereto. Regardless of whether the openings 819 at least partially overlap each other in the axial direction, the path length of each of the openings 819 may be increased to the minimum dimension 827 without increasing the thickness of the structure 800 in the axial direction. It is also contemplated that openings 819 that are axially tilted / slanted at an angle 825 may allow the thickness of the structure 800 in the axial direction to be reduced while allowing the path length of each of the openings 819 to remain at the minimum dimension 823. In some embodiments, the openings 819 may be tilted / slanted radially or tilted / slanted both radially and axially relative to the bottom surface 803 and top surface 801 of the structure 800. In either case, the minimum dimension 827 may be at least as large as the minimum dimension 211 to facilitate energy depletion of radical species that exit the processing region 121 and pass through at least one flow path provided by the openings 819 on their way to the exhaust port 123.

[0104] Although opening 819 is shown as having a circular cross-section in plan view, embodiments are not so limited. For example, opening 819 may have any suitable cross-sectional configuration, such as an oval, elliptical, triangular, quadrilateral, etc. In some examples, opening 819 may have an oval or free-form cross-sectional configuration in plan view. In either case, the maximum dimension of such opening in a plane perpendicular to central axis 815 may still correspond to maximum dimension 821, and the minimum dimension in the axial direction may still correspond to minimum dimension 823 or 827. However, the maximum dimension of openings in such alternative configurations in a plane perpendicular to central axis 815 may or may not extend radially relative to central axis 815.

[0105] support structure As previously mentioned, in some embodiments, suppressor 129 may be supported within chamber 103 from pedestal 105 via an annular support structure 209. Figure 10 is a schematic perspective view of an annular support structure, according to some embodiments. Figure 11 is a schematic bottom view of a portion of the annular support structure of Figure 10, according to some embodiments. Figure 12 is a schematic cross-sectional view of the annular support structure of Figure 10 taken along section line 12-12, according to some embodiments.

[0106] 10-12 , the annular support structure 109 includes an upper surface 1001, a lower surface 1003, an inner surface 1005, and an outer surface 1007. The upper surface 1001, the lower surface 1003, the inner surface 1005, and the outer surface 1007 together define a body 1201. The body 1201 includes an inner protrusion 1203. In some cases, the inner protrusion 1203 extends circumferentially inward from the inner surface 1005 toward the central axis 1009. Thus, the inner protrusion 1203 may extend the entire circumference of the inner surface 1005, although embodiments are not limited thereto. For example, in some cases, the inner protrusion 1203 may be divided into multiple inner protrusions spaced circumferentially apart from one another about the central axis 1009. The inner protrusion 1203 may include a mating surface (or mounting surface) 1205 that, in some embodiments, is configured to abut one or both of the upper surfaces 203 a and 205 a of the dielectric rings 203 and 205 when the annular support structure 209 is supported from the pedestal 105. As seen in FIGS. 2 and 3 , the mating surface 1205 abuts both the upper surfaces 203 a and 205 a of the dielectric rings 203 and 205. Note that, when the annular support structure 209 is supported from the pedestal 105, the inner surface 1005 may abut the outer surface 205 b of the dielectric ring 205 as shown in FIG. 3 , although embodiments are not limited thereto. In an example where both the dielectric rings 203 and 205 are omitted, the mating surface 1205 and the inner surface 1005 may abut corresponding surfaces of the pedestal 105, although embodiments are not limited thereto.

[0107] According to various embodiments, body 1201 can have an inner dimension (e.g., inner diameter) 1013 that is equal to or greater than the outer boundary dimension of dielectric ring 205. Furthermore, body 1201 can have an outer dimension (e.g., outer diameter) 1015 that can be equal to or less than inner diameter 703, for example. Note that inner protrusion 1203 can include a distal end 1207 that can face and / or abut an outer surface of focus ring 127 when annular support structure 209 is supported from pedestal 105. Furthermore, although top surface 1001 of annular support structure 209 is shown in FIGS. 2 and 3 as being coplanar with reference plane 317, embodiments are not limited thereto. For example, top surface 1001 can be axially disposed above or below reference plane 317. Thus, when annular support structure 209 is supported from pedestal 105, upper surface 1001 may be coplanar with or axially offset from one or more of upper surface 129 a of suppressor 129 and upper surface 127 a of focus ring 127.

[0108] According to some embodiments, the annular support structure 209 may include a plurality of interlocking features (e.g., interlocking features 1011) configured to interlock with the bayonet-type engagement features 513 of the annular shield rings 129_1, 129_2, . . . , 129_n or the bayonet-type engagement features 817 of the structure 800. As seen in FIG. 10 , the annular support structure 209 includes four interlocking features 1011 (two of which are identified), although embodiments are not limited thereto. For example, the annular support structure 209 may include fewer than four interlocking features (e.g., three interlocking features) or more than four interlocking features (e.g., five, six, seven, etc. interlocking features).

[0109] The mating engagement features 1011 may define corresponding protrusions extending from the outer surface 1007 in respective radial directions from the central axis 1009. As seen in FIG. 12 , the mating engagement features 1011, in some embodiments, include a mating surface (or mounting surface) 1209 configured to abut against a mating surface 605 of a corresponding bayonet-style engagement feature of the suppressor 129 when the suppressor 129 is supported by the annular support structure 209. For example, the mating surface 1209 of one of the mating engagement features 1011 may abut against one or more mating surfaces 605 of the bayonet-style engagement features 513 of the annular shield rings 129_1, 129_2, . . . , 129_n or a corresponding mating surface of one of the bayonet-style engagement features 817 of the structure 800. The mating engagement features 1011 also include a distal end 1211.

[0110] According to some embodiments, the annular support structure 209 may be formed of or include a dielectric material, such as a ceramic material (e.g., alumina or aluminum nitride), although embodiments are not limited thereto. In some examples, the annular support structure 209 may be formed of a first material, such as a metal or metal alloy (e.g., aluminum or an aluminum alloy), and coated with a second material, such as a dielectric material. Furthermore, the material of the annular support structure 209 may be the same as or different from the material of at least one of the annular shield rings 129_1, 129_2, ..., 129_n, the structure 800, and / or at least one of the dielectric rings 203 and 205.

[0111] Although the mating engagement features 1011 of the annular support structure 209 are described as corresponding protrusions, embodiments are not so limited. For example, if the engagement features of the annular shield rings 129_1, 129_2, ..., 129_n or the structure 800 are configured differently, the mating engagement features of the annular support structure 209 may be configured to couple or function accordingly in relation thereto. For example, the engagement features of the annular shield rings 129_1, 129_2, ..., 129_n may be provided as through holes, and the engagement features of the annular support structure 209 may be provided as through holes, threaded through holes, screw holes, press nuts, and / or the like. As such, screws, bolts, and / or any other suitable fastening mechanisms may be used to releasably couple the annular shield rings 129_1, 129_2, ..., 129_n and the annular support structure 209 to one another. As another example, if the annular shield rings 129_1, 129_2, ..., 129_n are formed as a monolithic structure, the monolithic structure may have an engagement feature corresponding to a protrusion extending from the inner surface 505 of the annular shield ring 129_1, similar to how the mating engagement feature 1011 extends from the outer surface 1007 of the annular support structure 209. Thus, the annular support structure 209 may have an engagement feature corresponding to a slot configured similar to slot 601. In yet another example, the annular shield ring 129_1 may have an engagement feature corresponding to a protrusion extending from the inner surface 505, similar to how the mating engagement feature 1011 extends from the outer surface 1007 of the annular support structure 209. Thus, the annular shield rings 129_2, ..., 129_n and the annular support structure 209 may have an engagement feature corresponding to a slot configured similar to slot 601. In some embodiments, the mating engagement feature 1011 of the annular support structure 209 may be integrated as part of the pedestal 105, the shroud 207, and / or the chamber 103, such that the annular support structure 209 may be omitted. It is also contemplated that alternative hardware and / or support structures may be used to support the suppressor 129 within the chamber 103.

[0112] While the annular shield rings 129_1, 129_2, ..., 129_n and the annular support structure 209 are described as being separate structures, it is contemplated that the annular shield rings 129_1, 129_2, ..., 129_n and the annular support structure 209 may be formed as a single monolithic structure. For example, one or more additive manufacturing techniques may be used to form the annular shield rings 129_1, 129_2, ..., 129_n as a single body (or unitary molding) with the innermost annular shield ring (e.g., the annular shield ring 129_n) including the inner protrusion 1203 extending circumferentially inward from the inner surface 505 similar to the way the inner protrusion 1203 extends circumferentially inward from the inner surface 1005 of the annular support structure 209. Furthermore, the annular shield rings 129_1, 129_2, ..., 129_n may not include the bayonet-type engagement feature 513. Instead, one or more connectors may be formed on and / or between annular shield rings 129_1, 129_2,..., 129_n during fabrication of the monolithic structure. For example, one or more connectors may extend radially between adjacent ones of annular shield rings 129_1, 129_2,..., 129_n, although embodiments are not limited thereto.

[0113] An example of assembling a parasitic plasma suppressor between multiple annular shield rings (e.g., annular shield rings 129_1, 129_2, ..., 129_n), an annular support structure 209, and a holding structure 1500 that may be supported from the pedestal 105 within the chamber 103 is now detailed.

[0114] Parasitic Plasma Suppressor Assembly Figure 13A is a schematic plan view showing a portion of a partial assembly between an annular support structure and multiple annular shield rings, according to some embodiments. Figure 13B is a schematic plan view showing a portion of an assembly between an annular support structure, multiple annular shield rings, and a retaining structure, according to some embodiments. Figure 14 is a schematic partial side view showing the assembly of Figure 13B, according to some embodiments. Figure 15 is a schematic perspective view showing a retaining structure, according to some embodiments. Figure 16 is a schematic partial side view showing a partial assembly between two annular shield rings and a retaining structure, according to some embodiments.

[0115] 2, 3, 5A, 5B, 6, 7, 10-12, 13A, 13B, and 14-16, a parasitic plasma suppressor assembly may include suppressor 129, annular support structure 209, and one or more retaining structures 213. For convenience of description, suppressor 129 will be referred to as including annular shield rings 129_1, 129_2, and 129_n, although the following description may similarly apply in connection with structure 800. In some embodiments, to assemble annular shield rings 129_1, 129_2, and 129_n, annular shield rings 129_1, 129_2, and 129_n, the annular shield rings 129_1, 129_2, and 129_n may be supported on a horizontal (or substantially horizontal) surface in an arrangement similar to that seen in FIG. 7 as being concentrically aligned with one another about axis 701, such a configuration need not be the case and may be achieved with the assembly of suppressor 129, annular support structure 209, and one or more retaining structures 213. However, annular shield rings 129_1, 129_2, and 129_n may be arranged such that annular shield ring 129_2 is disposed between an outermost annular shield ring (e.g., annular shield ring 129_n) and an innermost annular shield ring (e.g., annular shield ring 129_1). For purposes of illustration, it is assumed that annular shield rings 129_1, 129_2, and 129_n are disposed on a surface and concentrically aligned with one another about axis 701.

[0116] According to various embodiments, the annular shield rings 129_1, 129_2, and 129_n may each include a corresponding set of bayonet-style engagement features 513 configured to couple with the mating engagement features 1011 of the annular support structure 209. For example, the set of bayonet-style engagement features of the annular shield ring 129_n may include bayonet-style engagement features 513_n1, 513_n2, 513_n3, and 513_n4, as shown in FIG. 7. Thus, to facilitate assembly with the annular support structure 209, the annular shield rings 129_1, 129_2, and 129_n may be positioned on a surface such that the openings 603 of the corresponding groups of bayonet-style engagement features 513 are radially (or substantially radially) aligned with one another. For example, bayonet-type engagement features 513_11, 513_21, and 513_n1 of annular shield rings 129_1, 129_2, and 129_n may be part of group 715_1 of bayonet-type engagement features that are radially (or substantially radially) aligned with respect to one another, as shown in Figure 7. Similar arrangements and alignments may exist between bayonet-type engagement features 513 of other groups of bayonet-type engagement features of annular shield rings 129_1, 129_2, and 129_n (e.g., groups 715_2, 715_3, and 715_4, etc.).

[0117] With the above-described arrangement between the annular shield rings 129_1, 129_2, and 129_n, the mating engagement features 1011 of the annular support structure 209 may be inserted into the openings 603 of the corresponding bayonet-style engagement features 513 of the annular shield rings 129_1, 129_2, and 129_n. For example, the annular support structure 209 may be positioned over the annular shield rings 129_1, 129_2, and 129_n such that the central axis 1009 of the annular support structure 209 is aligned with the axes 701 of the annular shield rings 129_1, 129_2, and 129_n. The annular support structure 209 may be translated axially along axis 701 until the mating engagement features 1011 of the annular support structure 209 are received within the openings 603_11, 603_21, and 603_n1 of the annular shield rings 129_1, 129_2, and 129_n, respectively, and abut the bottom surfaces 613 of the corresponding bayonet-style engagement features 513_11, 513_21, and 513_n1, as shown in FIG. 13A . In some embodiments, when disposed in this partially assembled state, the outer surface 1007 of the annular support structure 209 may face (and in some cases abut) the inner surface 505 of the annular shield ring 129_1. Furthermore, the distal end 1211 of the mating engagement feature 1011 may extend radially beyond the outer surface 507 of the annular shield ring 129_n, although embodiments are not limited thereto. For example, the distal end 1211 of the mating engagement feature 1011 may be flush with or radially interdigitated with the outer surface 507 of the annular shield ring 129_n.

[0118] To engage the annular support structure 209 with the annular shield rings 129_1, 129_2, and 129_n, the annular support structure 209 may be rotated in a first rotational direction about the central axis 1009 (e.g., clockwise about the central axis 1009), for example, until the mating engagement shapes 1011 abut the distal surfaces 611 of the corresponding bayonet-type engagement shapes 513 of the annular shield rings 129_1, 129_2, and 129_n. For example, the annular support structure 209 may be rotated about the central axis 1009 until the front surface 1301 of the interlocking engagement shape 1011_1 abuts the distal surfaces 611_11, 611_21, and 611_n1 of the bayonet-type engagement shapes 513_11, 513_21, and 513_n1 of the annular shield rings 129_1, 129_2, and 129_n, as shown in, for example, FIG. 13B.

[0119] When the annular support structure 209 is engaged with the annular shield rings 129_1, 129_2, and 129_n, the mating engagement features 1011 of the annular support structure 209 can be at least partially disposed within the third portions 601c of the bayonet-style engagement features 513 of the annular shield rings 129_1, 129_2, and 129_n. To inhibit (or at least reduce) relative rotation between the annular support structure 209 and the annular shield rings 129_1, 129_2, and 129_n in a second rotational direction opposite the first rotational direction (e.g., counterclockwise about the central axis 1009), one or more retention structures (or inserts) 213 can be inserted into at least a portion of the corresponding space in the bayonet-style engagement features 513 that is not occupied by the mating engagement features 1011. Before describing such arrangements, examples of retention structures will be described in detail with reference to FIGS. 15 and 16 .

[0120] 15 and 16 , a retention structure 1500 may include a body portion 1501 having an upper surface 1503, a lower surface 1505, and a plurality of side surfaces (such as side surfaces 1507, 1509, 1511, and 1513). In some embodiments, the side surfaces 1507 and 1509 may face each other in a first direction DR1, and the side surfaces 1511 and 1513 may face each other in a second direction DR2. The upper surface 1503 may be spaced apart from the lower surface 1505 in a third direction DR3. Additionally, the upper surface 1503 may be sloped from the side surface 1509 to the side surface 1507 at an angle 1515, although embodiments are not limited thereto. For example, the upper surface 1503 may not be sloped or may alternatively be configured in any suitable manner.

[0121] In some embodiments, the retention structure 1500 may further include a protruding portion 1517 extending from a lower portion of the side surface 1513 a distance 1519 in the second direction DR2. The protruding portion 1517 may have a dimension 1521 in the first direction DR1 and a dimension 1523 in the third direction DR3. In some cases, the lower surface 1505 of the main body portion 1501 may also correspond to a lower surface of the protruding portion 1517. Furthermore, the side surfaces 1507 and 1509 of the main body portion 1501 may correspond to respective side surfaces of the protruding portion 1517. The protruding portion 1517 may further include multiple mating surfaces (such as mating surfaces 1525 and 1527).

[0122] In some examples, the retention structure 1500 includes a plurality of protrusions (e.g., protrusions 1529) extending from the lower surface 1505 by a dimension 1601 in a third direction DR3. The protrusions may also have a dimension 1531 in the second direction DR2 and a dimension 1603 in the first direction DR1. According to some embodiments, the dimension 1603 may be less than or equal to the maximum dimension 307. Furthermore, the protrusions 1529 may have a fillet surface 1605 connecting with the lower surface 1505, and the protruding portion 1517 may have a fillet surface 153 connecting with the side surface 1513. However, embodiments are not limited thereto.

[0123] 2, 3, 5A, 5B, 6, 7, 10-12, 13A, 13B, and 14-16, when the annular support structure 209 is engaged with the annular shield rings 129_1, 129_2, and 129_n, one or more retention structures 213 may be inserted into at least a portion of the corresponding space in the bayonet-style engagement features 513 that is not occupied by the mating engagement features 1011. For example, the retention structure 213_1 may be radially inserted into the corresponding first and second portions 601a and 601b of the bayonet-style engagement features 513_11, 513_21, and 513_n1, respectively, of the bayonet-style engagement feature group 715_1 of the annular shield rings 129_1, 129_2, and 129_n. During this insertion process, for example, the lower surface 1505 of the retention structure 213_1 may be axially spaced apart from the corresponding bottom surfaces 613 of the bayonet-style engagement shapes 513_11, 513_21, and 513_n1 until the side surface 1509 of the retention structure 1500_1 abuts the outer surface 1007 of the annular support structure 209. At this point, the retention structure 213_1 may be axially lowered until the lower surface 1505 of the retention structure 213_1 abuts the bottom surfaces 613 of the bayonet-style engagement shapes 513_11, 513_21, and 513_n1. To help facilitate this process, the dimension 1401 of the second portion 601b of the bayonet-style engagement shape 513 may be greater than or equal to the sum of the sizes of the dimensions 1523 and 1601 of the retention structure 213_1.

[0124] 2, 3, 7, and 16, axially lowering the retention structure 213_1 may allow the protrusions 1529 to be inserted into the openings 303a and 303b, respectively, to help maintain the sizing of the maximum dimension 307 between adjacent annular shield rings (such as between annular shield rings 129_2 and 129_n). Additionally, insertion of each protrusion 1529 into the corresponding openings 303a and 303b may concentrically (or substantially concentrically) align the annular shield rings 129_1, 129_2, and 129_n about the axis 701. Furthermore, in this assembled state, the mating surface 1527 of the retention structure 213_1 may abut the rear surface 1403 of the mating engagement feature 1011_1, as seen in FIG. This may inhibit (or at least reduce) relative rotation between the annular support structure 209 and the annular shield rings 129_1, 129_2, and 129_n in the second rotational direction.

[0125] In some cases, the respective abutment surfaces 609 (see FIG. 6 ) of the corresponding protruding portions 607 of the bayonet-style engagement features 513 may also function to reduce relative rotation between the annular support structure 209 and the annular shield rings 129_1, 129_2, and 129_n in the second rotational direction. Additionally, although the upper surface 1503 is shown in FIGS. 2, 3, and 14 as being aligned with the upper surfaces 501 of the annular shield rings 129_1, 129_2, and 129_n, embodiments are not limited thereto. For example, the upper surface 1503 may extend beyond or be recessed from one or more of the upper surfaces 501 of the annular shield rings 129_1, 129_2, and 129_n. In examples where the upper surfaces 501 of the annular shield rings 129_1, 129_2, and 129_n are incrementally offset from the reference surface 317 (an example of which is shown in FIG. 17B), the slopping of the upper surfaces 1503 may generally correspond to the incremental offset of the upper surfaces 501.

[0126] According to various embodiments, once the parasitic plasma suppressor assembly is assembled, it can be positioned on the pedestal 105 such that the axis 701 is aligned (or substantially aligned) with the axis 131. The parasitic plasma suppressor assembly can be axially lowered along the axis 131, for example, until the mating surface 1205 of the annular support structure 209 abuts at least one of the upper surfaces 203 a and 205 a of the dielectric rings 203 and 205. In this supported state, the mating surface 1209 of the mating engagement feature 1011 can abut the mating surface 605 of the bayonet-style engagement feature 513. In instances where the distal end 1211 of the mating engagement feature 1011 of the annular support structure 209 extends beyond the outer surface 507 of the annular shield ring 129_n, the distal end 1211 can still be spaced from the inner surface of the chamber 103 or the shroud 207 (if present).

[0127] Effectiveness of systems for parasitic plasma suppression. 17A and 17B compare parasitic plasma generation in a conventional substrate processing system and a substrate processing system according to some embodiments. To evaluate the effectiveness of an example suppressor, a substrate processing system was set up for PECVD of silicon nitride in association with various levels used to generate plasma in a processing region similar to processing region 121. During plasma generation, a digital camera was used to capture images through a peephole into the chamber of the substrate processing system to visually determine whether parasitic plasma was being generated outside of each processing region. To provide protection from RF radiation, a metal grid (or perforated screen) was attached to the peephole. However, these grids also caused vignetting in the captured images. Nevertheless, it was observed that conventional substrate processing systems without a parasitic plasma suppressor (such as that shown in FIG. 17A ) allowed parasitic plasma generation in at least region 1701 located between pedestal 1703 and surrounding chamber components (such as shroud 1705). Conversely, a substrate processing system including an example parasitic plasma suppressor 1707 (such as that shown in FIG. 17B ) suppressed the generation of parasitic plasma in at least a region 1701 located between the pedestal 1703 and surrounding chamber components (such as the shroud 1705). To aid in visualization of the components in FIGS. 17A and 17B , the pedestal 1703, the suppressor 1707, and the showerhead 1709 are roughly outlined with white lines. It was also observed that over a range of input power of 800 watts (W) to 1300 W to the pedestal 1703 (or an electrode associated with the pedestal 1703), with the showerhead 1709 grounded, the substrate processing system including the suppressor 1707 enabled a silicon nitride deposition rate of approximately 300 angstroms per minute, which was faster than the silicon nitride deposition rate associated with conventional substrate processing systems.

[0128] Multi-Station Processing Tools FIG. 18 is a schematic diagram illustrating a multi-station processing tool, according to some embodiments.

[0129] In some embodiments, the multi-station processing tool 1800 may include an entry load lock 1803 and an exit load lock 1805, one or both of which may include a plasma source and / or an ultraviolet (UV) source. A robot 1807 at atmospheric pressure is configured to move wafers from cassettes loaded through a pod 1809 into the entry load lock 1803 through an atmospheric port 1811. The wafer is placed on a pedestal 1813 in the entry load lock 1803 by the robot 1807, the atmospheric port 1811 is closed, and the entry load lock 1803 is pumped down. In examples where the entry load lock 1803 includes a remote plasma source, the wafer 101 may undergo remote plasma processing in the entry load lock 1803 before being introduced into the processing chamber 1815. Additionally, the wafer 101 may be heated in the entry load lock 1803, for example, to remove moisture and / or adsorbed gases. Next, a chamber transfer port 1817 to the processing chamber 1815 is opened and another robot 1819 places the wafer 101 into the reactor and onto the pedestal of the first station shown within the reactor for processing. While the example shown in Figure 18 includes a load lock, it will be understood that in some embodiments the wafer 101 may be placed directly into the processing station.

[0130] As seen in FIG. 18 , the processing chamber 1815 includes four processing stations, numbered 1 through 4. Each station includes a temperature-controlled pedestal (such as the temperature-controlled pedestal 1821 of station 1) and a gas line inlet. It will be appreciated that in some cases, each processing station may have a different or multiple purposes. For example, in some embodiments, one processing station may be switchable between chemical vapor deposition (CVD) and PECVD processing modes. In another example, a deposition operation (e.g., a PECVD operation) may be performed in one station, while exposure to UV radiation for UV curing may be performed in another station. In some cases, deposition and UV curing may be performed in the same station. Furthermore, while the processing chamber 1815 is shown as including four stations, embodiments are not so limited. For example, the processing chamber 1815 may include any suitable number of stations (e.g., five or more stations or three or fewer stations).

[0131] As previously mentioned, the multi-station processing tool 1800 may include a wafer handling system (e.g., a robot 1819 with spider forks 1801) for moving and / or positioning wafers within the processing chamber 1815. In some embodiments, the wafer handling system may move wafers between various processing stations and / or between processing stations and load locks. However, it is contemplated that any suitable wafer handling system may be used, such as, for example, a wafer carousel, other wafer handling robots, etc. Additionally, the multi-station processing tool 1800 may include (or be connected to) a system controller 1823 used to control processing conditions and hardware wafer states of the multi-station processing tool 1800. The system controller 1823 may include one or more memory devices 1825, one or more mass storage devices 1827, and one or more processors 1829. Each processor 1829 may include a central processing unit (CPU) or computer, analog and / or digital input / output connections, stepper motor controller boards, and the like.

[0132] In some embodiments, the system controller 1823 controls each of the operations of the multi-station processing tool 1800. For example, the system controller 1823 may execute system control software 1831 stored on the mass storage device 1827, loaded into the memory device 1825, and executed by the processor 1829. Alternatively, the control logic may be hard-coded into the system controller 1823. For these purposes, application specific integrated circuits (ASICs), programmable logic devices (e.g., field programmable gate arrays (FPGAs)), and / or the like may be used. Hereinafter, where "software" or "code" is used, functionally equivalent hard-coded logic may be used instead. The system control software 1831 may comprise instructions for controlling the timing, mixture of gases, gas flow rates, chamber and / or station pressure, chamber and / or station temperature, wafer temperature, target power levels, RF power levels, substrate pedestal, chuck, and / or susceptor position, and other parameters of a particular process being performed by the multi-station processing tool 1800. The system control software 1831 may be configured in any suitable manner. For example, various processing tool component subroutines or control objects may be written to control the operation of processing tool components used to perform various processing tool processes. The system control software 1831 may be coded in any suitable computer-readable programming language.

[0133] In some embodiments, the system control software 1831 may comprise input / output control (IOC) sequence instructions for controlling the various parameters described above. Other computer software and / or programs stored on the mass storage device 1827 and / or memory device 1825 associated with the system controller 1823 may also be used in some embodiments. Examples of programs or program sections for this purpose include a substrate positioning program, a process gas control program, a pressure control program, a heater control program, a cooler control program, and a plasma control program.

[0134] The substrate positioning program may comprise program code for processing tool components used to load and orient the wafer 101 onto the pedestal 1821 and control the spacing between the wafer 101 and other parts of the multi-station processing tool 1800.

[0135] The process gas control program may include code for controlling gas composition (e.g., silicon-containing gas, oxygen-containing gas, nitrogen-containing gas, diluent gas (or inert gas), etc., as described herein) and flow rates, and, optionally, for flowing gases into one or more process stations prior to deposition to stabilize the pressure within the process stations. The pressure control program may include code for controlling the pressure within the process stations, for example, by adjusting throttle valves in the exhaust systems of the process stations, gas flow rates to the process stations, and / or the like.

[0136] The heater control program may include code for controlling current to a heating unit used to heat the pedestal (e.g., pedestal 1821) and / or showerhead (e.g., showerhead 113) of the processing chamber 1815, and thus heat the wafer 101. Additionally or alternatively, the heater control program may control the supply of a thermally conductive gas (such as helium) to a gas distributor and thus to the wafer 101.

[0137] The cooler control program may include code for controlling the flow rate of conductive cooling fluid through a cooling unit used to extract heat from the pedestal (e.g., pedestal 1821) and / or showerhead (e.g., showerhead 113) of the processing chamber 1815 and thus, for example, capture, store, recycle waste heat, and / or transfer such thermal energy to the processing system.

[0138] The plasma control program may comprise code for setting RF power levels applied to process electrodes in one or more process stations, according to various embodiments.

[0139] The pressure control program may comprise code for maintaining pressure within the reaction chamber according to various embodiments.

[0140] In some embodiments, a user interface may be provided in association with the system controller 1823. The user interface may include a display screen (graphical software display of equipment and / or processing conditions) and user input devices such as a pointing device, keyboard, touch screen, microphone, etc.

[0141] In some embodiments, the parameters adjusted by the system controller 1823 may relate to process conditions. Non-limiting examples include process gas composition and flow rates, temperature, pressure, plasma conditions (such as RRF bias power levels), pressure, temperature, etc. These parameters may be provided to the user in the form of a recipe and may be entered using a user interface.

[0142] Signals for monitoring the process may be provided from various process tool sensors via analog and / or digital input connections of the system controller 1823. Signals for controlling the process may be output at analog and / or digital output connections of the multi-station process tool 1800. Non-limiting examples of process tool sensors that may be monitored include mass flow controllers, pressure sensors (such as pressure gauges), thermocouples, etc. Appropriately programmed feedback and control algorithms may be used with data from the sensors to maintain process conditions.

[0143] The system controller 1823 may provide program instructions for carrying out one or more of the processes described above. The program instructions may control various process parameters, such as direct current (DC) power levels, RF bias power levels, pressure, temperature, etc. The instructions may control parameters to manipulate the deposition of the film stack of the stress compensation layer according to various embodiments.

[0144] The system controller 1823 typically includes one or more memory devices and one or more processors configured to execute instructions that cause the device to perform methods according to some embodiments. In some examples, a machine-readable medium containing instructions for controlling processing operations according to various embodiments may be coupled to the system controller 1823.

[0145] In some embodiments, the system controller 1823 may be part of a system, which may be part of at least one of the examples described above. Such a system may include semiconductor processing equipment, such as one or more processing tools, one or more chambers, one or more platforms for processing, and / or specific processing components (e.g., wafer pedestals, gas flow systems, temperature control systems, etc.). The above-described systems may be integrated with electronics for controlling the operation of the system before, during, and / or after processing of semiconductor wafers or substrates. The electronics may be referred to as a "controller" and may control various components or subcomponents of the system. For example, depending on the process requirements and / or type of system, the system controller 1823 may be programmed to control any of the processes disclosed herein, such as supply of process gases, temperature settings (e.g., heating and / or cooling), valve operation, light source control for radiant heating, pressure settings, vacuum settings, power settings, RF generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid supply settings, position and motion settings, and wafer movement in and out of tools or chambers and other moving tools and / or load locks connected or coupled to a particular system. Thus, the system controller 1823 may be configured to control various actuators and motors of the backside wafer processing system, among other systems.

[0146] Generally, the system controller 1823 may be defined as electronic equipment having various integrated circuits, logic, memory, and / or software that receive instructions, issue instructions, control operations, enable cleaning operations, enable endpoint measurements, and / or the like. The integrated circuits may include chips in the form of firmware that store program instructions, digital signal processors (DSPs), chips defined as application-specific integrated circuits (ASICs), and / or one or more microprocessors or microcontrollers that execute program instructions (e.g., software). The program instructions may be communicated to the system controller 1823 in the form of various individual settings (or program files) that define operational parameters for performing particular processes on or for semiconductor wafers or instructions for the system. The operational parameters, in some embodiments, may be part of a recipe defined by a process engineer to accomplish one or more processing steps during processing of one or more layers, materials, metals, oxides, silicon, silicon oxides, surfaces, circuits, dies, etc. of a wafer.

[0147] In some embodiments, the system controller 1823 may be part of or connected to a computer that is integrated with, connected to, or otherwise networked with the system, or a combination thereof. For example, the system controller 1823 may be in the “cloud” or may be all or part of a fab host computer system that can enable remote access to wafer processing. The computer may enable remote access to the system to monitor the current progress of a manufacturing operation, examine the history of past manufacturing operations, or examine trends or performance indicators from multiple manufacturing operations, to change parameters of a current process, configure processing steps according to a current process, or initiate a new process. In some examples, a remote computer (e.g., a server) may provide process recipes to the system over a network (which may include a local network or the Internet). The remote computer may include a user interface that enables entry or programming of parameters and / or settings, which are communicated to the system from the remote computer. In some examples, the controller receives instructions in the form of data, where the instructions specify parameters for each of the processing steps to be performed during one or more operations. It should be understood that the parameters may be specific to the type of process being performed as well as the type of tool the controller is configured to interface with or control. Thus, as described above, the system controller 1823 may be distributed, such as by having one or more separate controllers that are networked and operate toward a common purpose (such as the process and control described herein). One example of a distributed controller for such purposes is one or more integrated circuits on the chamber that communicate with one or more remotely located integrated circuits (e.g., located at the platform level or remotely as part of a remote computer) that cooperate to control the process in the chamber.

[0148] Without limitation, example systems may include a plasma etch chamber or module, a deposition chamber or module, a spin rinse chamber or module, a metal plating chamber or module, a cleaning chamber or module, a bevel edge etch chamber or module, a physical vapor deposition (PVD) chamber or module, a chemical vapor deposition (CVD) chamber or module, an atomic layer deposition (ALD) chamber or module, an atomic layer etch (ALE) chamber or module, an ion implantation chamber or module, a track chamber or module, and / or any other semiconductor processing system related to or that may be utilized in the fabrication and / or manufacturing of semiconductor wafers.

[0149] As described above, depending on the processing step or steps being performed by the tool, the system controller 1823 may communicate with one or more of other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, nearby tools, tools located throughout the factory, a main computer, other controllers, and / or tools used in material transport to carry containers of wafers to or from tool locations and / or load ports within a semiconductor fabrication factory.

[0150] Additional and / or Alternative Embodiments Unless otherwise specified, the illustrated embodiments should be understood as providing examples of various detailed features of some embodiments. Unless otherwise specified, the features, components, modules, layers, films, regions, features, structures, etc. (hereinafter individually or collectively referred to as "elements") of the various examples may be combined, separated, interchanged, and / or rearranged in other ways without departing from the teachings of the present disclosure.

[0151] The terminology used herein is for the purpose of describing certain embodiments and is not intended to be limiting. As used herein, the singular forms "a," "an," and "the" are intended to include plural references unless singularity is clear from the context. It should be understood that "for each <item> of one or more <items>," "for each <item> of one or more <items>," and / or equivalent expressions, when used herein, include both single-item groups and multiple-item groups; i.e., the phrase "for each" is used in the programming language sense to refer to each item of any group of items. For example, if the group of items referred to is a single item, then "each" refers only to that single item and does not imply that there must be at least two of them (even though dictionary definitions of "each" often define the term to refer to "every one of two or more"). Similarly, the term "set" or "subset" itself should not necessarily be construed as inclusive of multiple items, and it should be understood that a set or subset may include only one element or multiple elements (unless the context suggests otherwise). The terms "comprises," "comprising," "includes," and / or "including," as used herein, indicate the presence of stated features, integers, steps, operations, elements, components, and / or groups thereof, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups thereof. Also, as used herein, it should be noted that the terms "substantially," "about," and other similar terms are used as terms of approximation, not as terms of degree, and thus are used to account for inherent deviations in measurements, calculations, and / or provided values that are recognized by those of ordinary skill in the art. Thus, as used herein, the term "substantially" means within 5% of a reference value, unless otherwise specified.For example, substantially perpendicular means within ±5% of parallel.

[0152] The use of cross-hatching and / or shading in the accompanying drawings is generally provided to clarify boundaries between adjacent elements. Thus, the presence or absence of cross-hatching or shading does not convey or indicate any preference or requirement for specific materials, material properties, dimensions, proportions, characteristics, and / or any other features, attributes, or properties of the illustrated elements, unless otherwise specified. Furthermore, in the accompanying drawings, the sizes and relative sizes of elements may be exaggerated for clarity and / or convenience. Thus, the sizes and relative sizes of each element are not necessarily limited to those depicted in the drawings. When an embodiment may be implemented differently, the order of certain processes may be performed differently from the order described. For example, two consecutively described processes may be performed substantially simultaneously or in the reverse order from that described.

[0153] When an element (e.g., a layer) is referred to as being "on," "connected to," or "coupled to" another element, it may be directly on, directly connected to, or directly coupled to the other element, or there may be at least one intervening element. However, when an element is referred to as being "directly on," "directly connected to," or "directly coupled to" another element, there are no intervening elements present. Other terms and / or phrases, such as "between" versus "directly between," "adjacent" versus "directly adjacent," "on" versus "directly on," etc., when used herein to describe relationships between elements, should be interpreted similarly. Additionally, the term "connected" can mean a physical connection, an electrical connection, and / or a fluid connection. To this end, in this disclosure, the phrase "fluidically connected" is used in reference to spaces, plenums, holes, etc. that may be connected to one another, either directly or through one or more intervening components or volumes, to form a fluid connection, similar to the use of the phrase "electrically connected" in reference to components that are connected to one another to form an electrical connection.The phrase "fluidically interposed" is used with respect to a component, space, plenum, hole, etc. that is fluidly connected to at least two other components, spaces, plenums, holes, etc., to refer to a fluid flowing from one of those other components, spaces, plenums, holes, etc. to another one of those other components, spaces, plenums, holes, etc. first passing through the "fluidically interposed" component before reaching the other one of those other components, spaces, plenums, holes, etc. For example, if a pump is fluidly interposed between a reservoir and an outlet, fluid flowing from the reservoir to the outlet will first pass through the pump before reaching the outlet. The phrase "fluidically adjacent," when used, refers to the positioning of a fluid element relative to another fluid element such that there are no potential structures fluidly interposed between the two elements that could potentially obstruct fluid flow between the two fluid elements. For example, in a flow path having a first valve, a second valve, and a third valve arranged in sequence along the flow path, the first valve will be fluidly adjacent to the second valve, the second valve will be fluidly adjacent to both the first and third valves, and the third valve will be fluidly adjacent to the second valve.

[0154] For purposes of this disclosure, "at least one of X, Y, ..., and Z" and "at least one selected from the group consisting of X, Y, ..., and Z" may be interpreted as X only, Y only, ..., Z only, or any combination of two or more of X, Y, ..., and Z (e.g., XYZ, XYY, YZ, and ZZ, etc.). As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0155] Terms such as "first," "second," and "third" may be used herein to describe various elements, but these elements are not limited by these terms. These terms are used to distinguish one element from another. Thus, a first element discussed below could also be referred to as a second element without departing from the teachings of the present disclosure. To this end, such an identifier (e.g., "first element") should not be read as implicitly or inherently suggesting the necessary presence of another element (e.g., "second element"). Furthermore, the use of ordinal numbers (e.g., (a), (b), (c), etc., or (1), (2), (3), etc.) in this disclosure and claims should not be understood to indicate any particular order or sequence unless such order or sequence is explicitly indicated. For example, if there are three steps labeled (i), (ii), and (iii), these steps may be performed in any order (or simultaneously, if convenient) unless otherwise indicated. For example, if step (ii) involves manipulation of an element produced in step (i), step (ii) may be considered to be performed at some point after step (i). Similarly, if step (i) involves manipulation of an element produced in step (ii), it should be understood that the opposite is true.

[0156] Spatially relative terms (such as "beneath," "below," "under," "above," "over," "higher," "side" (e.g., "sidewall"), etc.) may be used herein for convenience and thus to describe the spatial relationship of an element to at least one other element depicted in the figures. Spatially relative terms are intended to encompass different orientations of the device in use, operation, and / or manufacture, in addition to the orientation depicted in the figures. For example, if a device in the figures is rotated, an element described as being "below" or "below" another element or feature would then be positioned "above" or "above" the other element or feature. Thus, the term "below" can encompass both an orientation above and below. Additionally, a device may be otherwise oriented (e.g., rotated 90 degrees or otherwise), and therefore, spatially relative descriptions used herein should be interpreted accordingly.

[0157] As used herein, the term "between," when used in conjunction with a range of values, should be understood to include the first and last values in the range, unless otherwise specified. For example, between 1 and 5 should be understood to include 1, 2, 3, 4, and 5, not just 2, 3, and 4.

[0158] As used herein, the phrase "operably connected" should be understood to refer to two components and / or systems being directly or indirectly connected, for example, so that at least one component or system can control the other. For example, a controller may be described as being operably connected with (or to) a resistive heating unit, including being connected to a sub-controller of the resistive heating unit, which is electrically connected to a relay configured to controllably connect or disconnect the resistive heating unit from a power source capable of providing an amount of power that can be supplied to the resistive heating unit to produce a desired degree of heating. The controller itself may not provide such power to the resistive heating unit due to the currents involved, but the controller should still be understood to be operably connected to the resistive heating unit.

[0159] As used herein, the singular forms "a," "an," and "the" are intended to include plural references unless singularity is clear from the context. Also, "for each <item> of one or more <items>," "for each <item> of one or more <items>," and / or equivalent expressions, when used herein, should be understood to include both single-item groups and multiple-item groups; i.e., the phrase "for each" is used in the programming language sense to refer to each item in any group of items. For example, if the group of items referred to is a single item, "each" refers only to that single item and does not imply that there must be at least two of those items (even though dictionary definitions of "each" often define the term to refer to "every one of two or more"). Similarly, the terms "set" or "subset," by themselves, should not necessarily be considered to include multiple items; it should be understood that a set or subset may include only one member or multiple members (unless the context suggests otherwise). Furthermore, the terms "comprises," "comprising," "includes," and / or "including," when used herein, indicate the presence of stated features, integers, steps, operations, elements, components, and / or groups thereof, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups thereof.

[0160] Various embodiments are described herein with reference to cross-sectional, isometric, perspective, plan, and / or exploded views that are schematic representations of idealized embodiments and / or intermediate structures. As such, variations from the shapes of the illustrations as a result, for example, of manufacturing techniques and / or tolerances, are to be expected. Therefore, the embodiments disclosed herein should not be construed as limited to the particular illustrated shapes of regions but should include deviations in shape that result, for example, from manufacturing. To this end, the regions illustrated in the figures may be schematic in nature and the shapes of these regions may not reflect the actual shape of a region of a device and, therefore, are not intended to be limiting.

[0161] Unless otherwise defined, all terms (technical and scientific) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs. Terms (such as those defined in commonly used dictionaries) should be interpreted as having a meaning consistent with the meaning in the context of the relevant art, and should not be interpreted in an idealized or overly formal sense unless expressly defined herein.

[0162] As is customary in the art, some embodiments are described and illustrated in the accompanying drawings in terms of functional blocks, units, and / or modules. Those skilled in the art will understand that these blocks, units, and / or modules are physically implemented by electronic (or optical) circuits (logic circuits, discrete components, microprocessors, hardwired circuits, memory elements, hardwired connections, etc.) that may be formed using semiconductor-based or other manufacturing technologies. When the blocks, units, and / or modules are implemented by a microprocessor or other similar hardware, they may be programmed and controlled using software (e.g., microcode) to perform various functions discussed herein, and may optionally be driven by firmware and / or software. It is also contemplated that each block, unit, and / or module may be implemented by dedicated hardware or as a combination of dedicated hardware to perform some functions and a processor (e.g., one or more programmed microprocessors and associated circuitry) to perform other functions. Also, each block, unit, and / or module of some embodiments may be physically separated into two or more interacting individual blocks, units, and / or modules without departing from the concepts of the present invention. Furthermore, the blocks, units, and / or modules of some embodiments may be physically combined into more complex blocks, units, and / or modules without departing from the teachings of the present disclosure.

[0163] Although the present embodiments have been described in some detail for purposes of clarity, it will be apparent that certain changes and modifications may be made within the scope of the appended claims. It should be noted that there are many other ways of implementing the processes, systems, and apparatus of the disclosed embodiments. Accordingly, the embodiments are to be considered as illustrative and not restrictive, and the embodiments are not limited to the details set forth herein.

[0164] Furthermore, while the above disclosure focuses on one or more particular embodiments, it should be understood that it is not limited to only the above-described examples, but is also applicable to similar modifications and mechanisms, and such similar modifications and mechanisms are also deemed to be within the scope of the present disclosure. For the avoidance of any doubt, it should also be understood that the above disclosure is directed to at least the following numbered embodiments, as well as other embodiments that are apparent from the above disclosure:

[0165] Example 1: An apparatus configured to mitigate parasitic plasma generation associated with a plasma-enhanced process, the apparatus comprising an annular shield structure. The annular shield structure comprises a first inner surface, a first outer surface, a first upper surface, a first lower surface, and a plurality of openings. The first outer surface is radially opposite the first inner surface. The first upper surface extends between the first inner surface and the first outer surface. The first lower surface extends between the first inner surface and the first outer surface. The first lower surface is opposite the first upper surface in an axial direction transverse to the radial direction. The openings extend longitudinally between the first upper surface and the first lower surface. Each opening has a maximum dimension in a plane perpendicular to the axial direction that is less than or equal to about two times a plasma sheath thickness associated with the plasma-enhanced process.

[0166] Example 2: The device of example 1, wherein the largest dimension extends radially.

[0167] Example 3: The device of either example 1 or example 2, wherein each opening further comprises a minimum dimension in an axial or transverse direction.

[0168] Example 4: The apparatus of any of Examples 1 to 3, wherein the annular shield structure comprises a plurality of annular shield rings spaced apart from one another by a maximum radial dimension such that the opening is defined by the spacing between the annular shield rings.

[0169] Example 5: The device of any of Examples 1 to 3, wherein the annular shield structure is formed as a unitary body and the opening is defined as a through hole extending through the unitary body.

[0170] Example 6: The apparatus of any of Examples 1-3, further comprising an annular support structure. The annular support structure comprises a second inner surface and a second outer surface radially between the first inner surface and the second inner surface such that the annular shield structure surrounds the annular support structure. The annular shield structure and the annular support structure are removably coupled to one another.

[0171] Example 7: The apparatus of example 6, wherein the annular shield structure and the annular support structure are removably coupled to one another via a bayonet-style engagement.

[0172] Example 8: The device of Example 7, wherein the bayonet-type engagement portion includes a plurality of protrusions and a plurality of slots. The protrusions extend radially from one of the first inner surface and the second outer surface. The slots are defined in the other of the first inner surface and the second outer surface. The slots are configured to receive corresponding ones of the protrusions into first slot portions in response to relative movement between the annular shield structure and the annular support structure in an axial direction, and to receive corresponding ones of the protrusions into second slot portions communicatively coupled to the first slot portions in response to relative rotation between the annular shield structure and the annular support structure in a first rotational direction about an axially extending axis.

[0173] Example 9: The device of example 8, wherein the plurality of protrusions comprises at least three protrusions.

[0174] Example 10: The device of Example 8, wherein the plurality of protrusions comprises at least four protrusions.

[0175] Example 11: The apparatus of any of Examples 8 to 10, wherein the annular shield structure comprises a plurality of annular shield rings spaced apart from one another by a maximum dimension in a radial direction such that the openings are defined by the spacing between the annular shield rings, and the annular shield rings each comprise a corresponding set of a plurality of slots.

[0176] Example 12: The apparatus of Example 11, wherein the top surfaces of the respective annular shield rings are axially offset from one another.

[0177] Example 13: The apparatus of Example 12, wherein the top surface of the annular shield ring is offset such that the top surface of the annular shield ring is at an increasing distance from a reference plane with increasing distance from the first inner surface, and the reference plane includes the top surface of the annular shield ring that is closest to the first inner surface.

[0178] Example 14: The device of any of Examples 11 to 13, wherein in an engaged state of the bayonet-type engagement portion, the corresponding slots of the corresponding sets are configured to receive the same corresponding protrusions among the plurality of protrusions.

[0179] Example 15: The device of any of Examples 11 to 14, further comprising one or more retaining structures configured to inhibit relative rotation between the annular shield structure and the annular support structure in a second rotational direction about the axis, the second rotational direction being opposite to the first rotational direction.

[0180] Example 16: The device of Example 15, wherein at least one of the slots is further configured to receive a retaining structure of the one or more retaining structures into a first slot portion of the at least one slot and a third slot portion of the at least one slot in response to relative movement between the retaining structure and the at least one slot in a radial direction, and the third slot portion of the at least one slot is communicatively coupled between the first slot portion of the at least one slot and the second slot portion of the at least one slot. In an engaged state of the annular shield structure and the annular support structure and an engaged state of the retaining structure and the at least one slot, the retaining structure is configured to retain a corresponding protrusion in the second slot portion of the at least one slot.

[0181] Example 17: The device of Example 16, wherein the retention structure comprises a body portion, a first protrusion extending from a first sidewall of the body portion, and a plurality of second protrusions extending from an underside of the body portion, the first protrusion, or the body portion and the first protrusion. In an engaged state of the retention structure and the at least one slot, the body is disposed in a first slot portion of the at least one slot, the first protrusion is disposed in one or both of a second slot portion of the at least one slot and a third slot portion of the at least one slot, and the second protrusions are disposed in respective openings in the openings of the annular shield structure.

[0182] Example 18: The device of any of Examples 8-10, further comprising one or more retention structures. At least one of the slots is further configured to receive a retention structure of the one or more retention structures into a first slot portion of the at least one slot and a third slot portion of the at least one slot in response to relative movement between the retention structure and the at least one slot in a radial direction. The third slot portion of the at least one slot connects the at least one first slot portion to the at least one second slot portion. In an engaged state of the annular shield structure and the annular support structure and an engaged state of the retention structure and the at least one slot, the retention structure is configured to retain a corresponding protrusion in the second slot portion of the at least one slot to inhibit relative rotation between the annular shield structure and the annular support structure in a second rotational direction about the axis. The second rotational direction is opposite to the first rotational direction.

[0183] Example 19: The device of any of Examples 6 to 18, wherein the annular support structure further comprises at least one internal protrusion extending from the second inner surface toward a central axis of the annular support structure, the central axis extending in the axial direction, and the at least one internal protrusion comprising a third upper surface and a third lower surface axially opposite the third upper surface.

[0184] Example 20: The device of example 19, wherein the at least one internal projection extends around at least a portion of the circumference of the annular support structure.

[0185] Example 21 The apparatus of either example 19 or example 20, further comprising: a processing chamber having at least one sidewall; and a pedestal supported within the processing chamber. The pedestal has an outer boundary surface. The annular shield structure is radially disposed between the outer boundary surface of the pedestal and the at least one sidewall.

[0186] Example 22: The apparatus of example 21, further comprising a showerhead supported within the processing chamber such that the showerhead axially faces the pedestal, the showerhead configured to deliver one or more process gases to an area overlying the pedestal.

[0187] Example 23: The apparatus of either Example 21 or Example 22, further comprising at least one dielectric ring surrounding an outer boundary surface of the pedestal. The at least one dielectric ring comprises a fourth inner surface radially opposite the outer boundary surface of the pedestal, a fourth outer surface radially opposite the fourth inner surface, a fourth upper surface extending between the fourth inner surface and the fourth outer surface, and a fourth lower surface extending between the fourth inner surface and the fourth outer surface. The fourth lower surface is axially opposite the fourth upper surface. The annular shield structure is radially disposed between the at least one dielectric ring and the at least one sidewall.

[0188] Example 24: The apparatus of Example 23, wherein the first inner surface is spaced apart from the fourth outer surface by a dimension in a plane perpendicular to the axial direction that is less than or equal to approximately a plasma sheath thickness associated with the plasma-enhanced process.

[0189] Example 25: The apparatus of Example 23 or Example 24, further comprising a focus ring disposed on an outer circumferential portion of the upper surface of the pedestal. The focus ring comprises a fifth inner surface, a sixth outer surface radially opposite the fifth inner surface, a fifth upper surface extending between the fifth inner surface and the fifth outer surface, and a fifth lower surface extending between the fifth inner surface and the fifth outer surface. The fifth lower surface is axially opposite the fifth upper surface. In plan view, at least a portion of the fourth upper surface is radially adjacent to the fifth upper surface.

[0190] Example 26: The device of example 25, wherein the first top surface is disposed below a reference surface that includes the fifth top surface.

[0191] Example 27: The device of either example 25 or example 26, wherein the fourth upper surface is disposed at or below a reference surface that includes the fifth lower surface.

[0192] Example 28: The device of any of Examples 25 to 27, wherein the third lower surface abuts the fourth upper surface.

[0193] Example 29: The device of any of Examples 25 to 28, wherein the second inner surface abuts the fourth outer surface.

[0194] Example 30: The device of any of Examples 21 to 29, wherein the first exterior surface is spaced apart from at least one sidewall.

[0195] Example 31: The device of Example 30, wherein the plurality of protrusions extend radially from the second outer surface, and the outermost boundary surface of at least one of the plurality of protrusions is positioned closer to the at least one side wall than the first outer surface, and the outermost boundary surface of the at least one protrusion is spaced apart from the at least one side wall.

[0196] The apparatus of example 31, further comprising a shroud lining an inner surface of the at least one sidewall, wherein the annular shield structure is radially disposed between an outer boundary surface of the pedestal and the shroud, and an outermost boundary surface of the at least one projection is spaced apart from the shroud.

[0197] Example 33: The apparatus of any of Examples 21 to 30, further comprising a shroud lining an inner surface of the at least one sidewall, wherein the annular shield structure is radially disposed between an outer boundary surface of the pedestal and the shroud.

[0198] Example 34: The apparatus of any of Example 32 or Example 33, wherein the shroud comprises aluminum.

[0199] Example 35: The apparatus of any of Examples 21-34, wherein the processing chamber includes an exhaust port configured to exhaust gases associated with the plasma-enhanced processing, the gases including by-product gases, unreacted process gases, or by-product gases and unreacted process gases. The openings allow the gases to flow from a first region over the pedestal to the exhaust port through a second region adjacent the first region, the second region being radially spaced from the pedestal and configured to suppress generation of plasma in the second region.

[0200] Example 36: The apparatus of any of Examples 1 to 35, wherein in connection with plasma-enhanced processing, the opening is further configured to quench the flow of one or more energetic species through the opening.

[0201] Example 37 The apparatus of any of Examples 21 to 35, wherein the pedestal is configured to support a substrate within the processing chamber, the substrate having a maximum dimension in a direction perpendicular to the axial direction, wherein the maximum dimension between opposite portions of the first inner surface in the direction perpendicular to the axial direction is greater than the maximum dimension of the substrate.

[0202] Example 38: The device of any of Examples 6 to 37, wherein the first inner surface abuts the second outer surface.

[0203] Example 39: The device of any of Examples 6 to 38, wherein the maximum dimension of the annular shield structure in the axial direction is greater than the maximum dimension of the annular support structure in the axial direction.

[0204] Example 40: The device of any of Examples 1 to 39, wherein the annular shield structure comprises a ceramic material.

[0205] Example 41: The device of any of Examples 1 to 40, wherein the annular support structure comprises a ceramic material.

Claims

1. 1. An apparatus configured to mitigate parasitic plasma generation in connection with a plasma-enhanced process, comprising: Equipped with a circular shield structure, The annular shield structure is A first inner surface; a first outer surface that faces the first inner surface in a radial direction; a first upper surface extending between the first inner surface and the first outer surface; a first lower surface extending between the first inner surface and the first outer surface, the first lower surface facing the first upper surface in an axial direction intersecting the radial direction; a plurality of openings extending longitudinally between the first upper surface and the first lower surface, each of the openings having a maximum dimension in a plane perpendicular to the axial direction that is less than or equal to about two times a plasma sheath thickness associated with the plasma-enhanced process; An apparatus comprising:

2. 10. The apparatus of claim 1, the maximum dimension extends in the radial direction; The device, wherein each of the openings further comprises a minimum dimension in the axial direction or transverse to the axial direction.

3. 2. The apparatus of claim 1, wherein the annular shield structure comprises a plurality of annular shield rings, the annular shield rings being spaced apart from one another by the maximum dimension in the radial direction such that the opening is defined by a spacing between the annular shield rings.

4. 10. The apparatus of claim 1, further comprising: an annular support structure; The annular support structure comprises: A second inner surface; and a second outer surface located between the first inner surface and the second inner surface in the radial direction such that the annular shield structure surrounds the annular support structure; Equipped with The annular shield structure and the annular support structure are removably coupled to one another.

5. 5. The apparatus of claim 4, wherein the annular shield structure and the annular support structure are removably coupled to one another via a bayonet-style engagement.

6. 6. The device of claim 5, wherein the bayonet engagement portion comprises: a plurality of protrusions extending radially from one of the first inner surface and the second outer surface; a plurality of slots defined in the other of the first inner surface and the second outer surface; Equipped with The slots each include: receiving a corresponding one of the projections in a first slot portion in response to relative movement between the annular shield structure and the annular support structure in the axial direction; the device is configured to receive the corresponding protrusion into a second slot portion communicatively coupled to the first slot portion in response to relative rotation between the annular shield structure and the annular support structure in a first rotational direction about the axially extending axis.

7. The device of claim 6 , wherein the plurality of protrusions includes at least three protrusions.

8. 8. An apparatus according to claim 6 or claim 7, comprising: the annular shield structure comprises a plurality of annular shield rings, the annular shield rings being spaced apart from one another in the radial direction by the maximum dimension such that the opening is defined by a spacing between the annular shield rings; the annular shield rings each include a corresponding set of the plurality of slots.

9. 9. The apparatus of claim 8, wherein the top surfaces of the annular shield rings are offset from one another in the axial direction such that the top surfaces of the annular shield rings are at increasing distances from a reference plane with increasing distance from the first inner surface, the reference plane including the top surface of the annular shield ring closest to the first inner surface.

10. 9. The device of claim 8, wherein in an engaged state of the bayonet engagement portion, corresponding slots of the corresponding sets are configured to receive the same corresponding protrusions of the plurality of protrusions.

11. 9. The apparatus of claim 8, further comprising: one or more retention structures configured to inhibit relative rotation between the annular shield structure and the annular support structure in a second rotational direction about the axis, the second rotational direction being opposite to the first rotational direction.

12. 12. The apparatus of claim 11, at least one slot among the slots is further configured to receive a retention structure among one or more retention structures into the first slot portion of the at least one slot and a third slot portion of the at least one slot in response to relative movement between the retention structure and the at least one slot in the radial direction, the third slot portion of the at least one slot being communicatively coupled between the first slot portion of the at least one slot and the second slot portion of the at least one slot; the retaining structure is configured to retain the corresponding protrusion in the second slot portion of the at least one slot when the annular shield structure and the annular support structure are in an engaged state and the retaining structure and the at least one slot are in an engaged state.

13. 13. The apparatus of claim 12, The holding structure includes: The main body part and a first projection extending from a first sidewall of the body portion; a plurality of second protrusions extending from a lower surface of the main body portion, the first protrusion, or the main body portion and the first protrusion; Equipped with In the engaged state of the retention structure and the at least one slot, the body is disposed in the first slot portion of the at least one slot; the first protrusion is disposed in one or both of the second slot portion of the at least one slot and the third slot portion of the at least one slot; The second projections are disposed in respective openings within the openings of the annular shield structure.

14. 8. The apparatus of claim 6 or claim 7, further comprising: one or more retention structures; at least one slot among the slots is further configured to receive a retention structure among one or more retention structures into the first slot portion of the at least one slot and a third slot portion of the at least one slot in response to relative movement between the retention structure and the at least one slot in the radial direction, the third slot portion of the at least one slot connecting the first slot portion of the at least one slot to the second slot portion of the at least one slot; wherein, in an engaged state of the annular shield structure and the annular support structure and an engaged state of the retention structure and the at least one slot, the retention structure is configured to retain the corresponding protrusion in the second slot portion of the at least one slot and inhibit relative rotation between the annular shield structure and the annular support structure in a second rotational direction about the axis; The second direction of rotation is opposite to the first direction of rotation.

15. 5. The apparatus of claim 4, the annular support structure further comprises at least one inner protrusion extending from the second inner surface toward a central axis of the annular support structure, the central axis extending in the axial direction; The at least one internal protrusion comprises: A third top surface; and a third lower surface facing the third upper surface in the axial direction; Equipped with The at least one internal projection extends around at least a portion of the circumference of the annular support structure.

16. 16. The apparatus of claim 15, further comprising: a processing chamber having at least one sidewall; a pedestal supported within the processing chamber, the pedestal having an outer boundary surface; a showerhead supported within the processing chamber axially facing the pedestal, the showerhead configured to distribute one or more process gases to an area overlying the pedestal; Equipped with The apparatus, wherein the annular shield structure is disposed radially between the outer boundary surface and the at least one sidewall of the pedestal.

17. 17. The apparatus of claim 16, further comprising: at least one dielectric ring surrounding the outer boundary surface of the pedestal; The at least one dielectric ring comprises: a fourth inner surface facing the outer boundary surface of the pedestal in the radial direction; a fourth outer surface facing the fourth inner surface in the radial direction; a fourth upper surface extending between the fourth inner surface and the fourth outer surface; a fourth lower surface extending between the fourth inner surface and the fourth outer surface, the fourth lower surface facing the fourth upper surface in the axial direction; Equipped with the annular shield structure is disposed between the at least one dielectric ring and the at least one sidewall in the radial direction; The apparatus, wherein the first inner surface is spaced from the fourth outer surface by a dimension in the plane perpendicular to the axial direction that is less than or equal to about the plasma sheath thickness associated with the plasma-enhanced process.

18. 18. The apparatus of claim 17, further comprising: a focus ring disposed on an outer periphery of an upper surface of the pedestal; The focus ring is A fifth inner surface; a fifth outer surface facing the fifth inner surface in the radial direction; a fifth upper surface extending between the fifth inner surface and the fifth outer surface; a fifth lower surface extending between the fifth inner surface and the fifth outer surface, the fifth lower surface facing the fifth upper surface in the axial direction; Equipped with In a plan view, at least a portion of the fourth upper surface is adjacent to the fifth upper surface in the radial direction; the first upper surface is disposed below a reference plane including the fifth upper surface; the fourth upper surface is disposed on or below a reference plane that includes the fifth lower surface; the third lower surface abuts against the fourth upper surface, the second inner surface abuts the fourth outer surface; The first exterior surface is spaced from the at least one side wall.

19. 19. The apparatus of claim 18, the plurality of protrusions extend radially from the second outer surface; an outermost boundary surface of at least one of the plurality of protrusions is disposed closer to the at least one sidewall than the first outer surface; The device, wherein the outermost boundary surface of the at least one protrusion is spaced from the at least one sidewall.

20. 20. The apparatus of claim 19, further comprising: a shroud lining an inner surface of the at least one side wall; the annular shield structure is disposed radially between the outer boundary surface of the pedestal and the shroud; The apparatus, wherein the outermost boundary surface of the at least one protrusion is spaced from the shroud.

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