Circuit control method, unit and device

Abstract

The present application provides a circuit control method, unit, and apparatus for a power supply, the power supply comprising a switching boost circuit, the switching boost circuit comprising at least one power semiconductor device, the circuit control method comprising the steps of: collecting input signals and output signals of the switching boost circuit; determining a control plan with the highest electrical energy conversion efficiency as a target control plan from a plurality of control plans to be selected based on the input signals, output signals, and circuit information of the switching boost circuit, the control plan to be selected comprising a control plan for the at least one power semiconductor device corresponding to each of a plurality of operating modes of the switching boost circuit; and controlling the turn-on and turn-off of the at least one power semiconductor device based on the target control plan. The present application can adjust the control plans for the power semiconductor devices in real time to improve the electrical energy conversion efficiency of the entire circuit.

Description

[Technical Field]

[0001] Related Applications This application claims priority from a Chinese patent application filed on August 12, 2022, bearing application number 202210968509.X, which is incorporated herein by reference.

[0002] The present application relates to the field of power semiconductor device control, and in particular to a circuit control method, unit and apparatus. [Background technology]

[0003] Currently, electricity is the main energy carrier, and power conversions such as A / D conversion, D / A conversion, and high-voltage to low-voltage conversion are required during its use. Therefore, the efficiency of electrical energy conversion also largely determines the efficiency of power usage.

[0004] Among these, power semiconductor devices play a crucial role in the power conversion process of switching boost circuits and are the source of efficiency losses during conversion. Power semiconductor device losses are mainly divided into turn-on loss and switching loss. The magnitude of these two losses is closely related to the load size and the control method of the power semiconductor device. Different control methods for power semiconductor devices will result in completely different switching losses, which will have a certain impact on the turn-on loss and, therefore, the electrical energy conversion efficiency of the switching boost circuit. Summary of the Invention [Problem to be solved by the invention]

[0005] Disclosure of the Invention The present application aims to provide a circuit control method that collects input and output signals of a switching boost circuit in real time to determine a control plan for a power semiconductor device with the highest electrical energy conversion efficiency, and adjusts the control plan for the power semiconductor device in real time based on the input and output signals, thereby improving the electrical energy conversion efficiency of the entire circuit. Another object of the present application is to provide a circuit control unit. Another object of the present application is to provide a power supply device. Another object of the present application is to provide a computer device. Another object of the present application is to provide a readable medium. Another object of the present application is to provide a computer program product. [Means for solving the problem]

[0006] In order to achieve the above object, the present application provides a circuit control method applicable to a power supply device, the power supply device comprising a switching boost circuit, the switching boost circuit comprising at least one power semiconductor device, The circuit control method includes: acquiring input and output signals of the switching boost circuit; determining a control plan having the highest electrical energy conversion efficiency as a target control plan from a plurality of control plans to be selected based on the input signal, the output signal and circuit information of the switching boost circuit, wherein the control plans to be selected include control plans for the at least one power semiconductor device corresponding to each of a plurality of operation modes of the switching boost circuit; and controlling the turn-on and turn-off of the at least one power semiconductor device based on the target control scheme.

[0007] Preferably, the step of determining a control plan having the highest electrical energy conversion efficiency as a target control plan from a plurality of selection control plans based on the input signal, the output signal and circuit information of the switching boost circuit includes: Calculating circuit losses in a plurality of selection control schemes of the switching boost circuit according to the input signal, output signal and circuit information of the switching boost circuit, wherein the circuit losses include inductance core loss, inductance coil loss, switching tube turn-on loss, switching tube turn-off loss, switching tube turn-on state loss, rectifier diode turn-on state loss and rectifier diode switching loss; determining an electric energy conversion efficiency for each of the control schemes based on a circuit loss and an output signal for each of the selected control schemes; and determining the control plan with the highest electric energy conversion efficiency from among the plurality of selection control plans as the target control plan.

[0008] Preferably, the plurality of operating modes includes an intermittent mode and / or a continuous mode; the selecting control scheme includes a control scheme for the at least one power semiconductor device corresponding to each of the operation modes of the switching boost circuit, that is, a discontinuous mode and / or a continuous mode; The control scheme for the at least one power semiconductor device corresponding to the continuous mode includes a continuous contact mode control scheme; The control scheme for the at least one power semiconductor device corresponding to the discontinuous mode includes an N-th valley discontinuous contact mode control scheme, where N is at least one positive integer greater than or equal to 1.

[0009] Preferably, the method comprises: When the power of the switching boost circuit is equal to or greater than a first predetermined power, the plurality of selection control schemes include a continuous contact mode control scheme and an N-th valley intermittent contact mode control scheme.

[0010] Preferably, the method comprises: When the power of the switching boost circuit is less than a second predetermined power, the plurality of selection control schemes include an M-th valley intermittent contact mode control scheme, and when the second predetermined power is less than the first predetermined power, M includes at least one positive integer greater than or equal to a predetermined value.

[0011] Preferably, collecting the input and output signals of the switching boost circuit comprises: The method includes collecting input and output signals of the switching boost circuit every one or more predetermined control periods.

[0012] Preferably, the method includes pre-establishing correspondences between different input and output signals and a plurality of control strategies.

[0013] The present application provides a circuit control unit applicable to a power supply device, the power supply device including a switching boost circuit, the switching boost circuit including at least one power semiconductor device, The circuit control unit a signal acquisition module for acquiring the input and output signals of the switching boost circuit; a control adjustment module that determines a control plan with the highest electrical energy conversion efficiency as a target control plan from a plurality of control plans to be selected based on the input signal, the output signal and circuit information of the switching boost circuit, the control plan to be selected including a control plan for the at least one power semiconductor device corresponding to each of a plurality of operation modes of the switching boost circuit; a switching control module for controlling the turn-on and turn-off of the at least one power semiconductor device based on the target control scheme.

[0014] The present application discloses a power supply device including a switching boost circuit and the above circuit control unit.

[0015] This application relates to a computer device including a memory, a processor, and a computer program stored in the memory and operable on the processor, The processor discloses a computer device that executes the method when the processor executes the program.

[0016] The present application relates to a computer-readable medium having a computer program stored thereon, A computer-readable medium is disclosed that performs the above method when the program is executed by a processor.

[0017] The present application discloses a computer program product comprising a computer program which, when executed by a processor, performs the above method.

[0018] A control method for a switching boost circuit according to the present application collects input and output signals of the switching boost circuit, and determines a control plan with the highest electrical energy conversion efficiency from a plurality of control plans to be selected as a target control plan based on the input and output signals and circuit information of the switching boost circuit, the control plan to be selected including a control plan for the at least one power semiconductor device corresponding to each of a plurality of operating modes of the switching boost circuit, and controls the turn-on and turn-off of the at least one power semiconductor device based on the target control plan. This allows the present application to collect input and output signals of the switching boost circuit in real time, and determine a target control plan with the highest electrical energy conversion efficiency from a plurality of control plans to be selected based on the input and output signals of the switching boost circuit, and control the turn-on and turn-off of the at least one power semiconductor device in the switching boost circuit based on the target control plan. As a result, the present application calculates the electric energy conversion efficiency of the control plan for the power semiconductor device in the switching boost circuit corresponding to each of a plurality of operating modes of the switching boost circuit based on changes in the input signal and output signal of the switching boost circuit, and determines the control plan with the highest electric energy conversion efficiency as the target control plan to determine the optimal control plan for the power semiconductor device in real time, thereby reducing the turn-on loss and switching loss of the power semiconductor device and increasing the electric energy conversion efficiency of the overall switching boost circuit.

[0019] In the following, in order to more clearly explain the embodiments of the present application or the technical solutions of the prior art, drawings necessary for the embodiments or the prior art will be briefly described. However, these drawings are only some of the embodiments of the present application, and it goes without saying that those skilled in the art can obtain other drawings from these drawings without any inventive efforts. [Brief explanation of the drawings]

[0020] [Figure 1]FIG. 1 shows a flowchart of a specific embodiment of a method for controlling a power semiconductor device of a switching boost circuit according to the present application. [Figure 2] 2 to 5 show schematic diagrams of switching boost circuits according to specific embodiments of the control method for power semiconductor devices of a switching boost circuit according to the present application. [Figure 3] 2 to 5 show schematic diagrams of switching boost circuits according to specific embodiments of the control method for power semiconductor devices of a switching boost circuit according to the present application. [Figure 4] 2 to 5 show schematic diagrams of switching boost circuits according to specific embodiments of the control method for power semiconductor devices of a switching boost circuit according to the present application. [Figure 5] 2 to 5 show schematic diagrams of switching boost circuits according to specific embodiments of the control method for power semiconductor devices of a switching boost circuit according to the present application. [Figure 6] FIG. 6 shows a flow chart of a specific embodiment S200 of the method for controlling a power semiconductor device of a switching boost circuit according to the present application. [Figure 7] 7 to 10 are schematic diagrams illustrating control schemes of specific embodiments of the control method for power semiconductor devices in a switching boost circuit according to the present application. [Figure 8] 7 to 10 are schematic diagrams illustrating control schemes of specific embodiments of the control method for power semiconductor devices in a switching boost circuit according to the present application. [Figure 9] 7 to 10 are schematic diagrams illustrating control schemes of specific embodiments of the control method for power semiconductor devices in a switching boost circuit according to the present application. [Figure 10] 7 to 10 are schematic diagrams illustrating control schemes of specific embodiments of the control method for power semiconductor devices in a switching boost circuit according to the present application. [Figure 11] FIG. 11 shows a flowchart of a specific embodiment S000 of a method for controlling a power semiconductor device of a switching boost circuit according to the present application. [Figure 12]FIG. 12 shows a structural diagram of a specific embodiment of the circuit control unit according to the present application. [Figure 13] FIG. 13 shows a structural schematic diagram of a computer device for implementing an embodiment of the present application. DETAILED DESCRIPTION OF THE INVENTION

[0021] The technical solutions according to the embodiments of the present application will be described below clearly and completely with reference to the drawings according to the embodiments of the present application, but it goes without saying that the above embodiments do not mean all the embodiments but only some of the embodiments of the present application. It should be understood that all other embodiments that can be obtained by those skilled in the art based on the embodiments of the present application without any inventive ideas are all within the scope of protection of the present application.

[0022] According to one aspect of the present application, this embodiment discloses a circuit control method. The circuit control method is applied to a power supply apparatus, the power supply apparatus including a switching boost circuit, and the switching boost circuit including at least one power semiconductor device. As shown in FIG. 1, in this embodiment, the method includes: Step S100 of collecting input and output signals of a switching boost circuit; Step S200: determining a control plan with the highest electrical energy conversion efficiency from a plurality of control plans to be selected as a target control plan based on the input signal, the output signal, and circuit information of the switching boost circuit, wherein the control plans to be selected include a control plan for at least one power semiconductor device corresponding to each of a plurality of operation modes of the switching boost circuit; and controlling the turn-on and turn-off of at least one power semiconductor device according to the target control scheme (S300).

[0023] A control method for a switching boost circuit according to the present application collects input and output signals of the switching boost circuit, and determines a control plan with the highest electrical energy conversion efficiency from a plurality of control plans to be selected as a target control plan based on the input and output signals and circuit information of the switching boost circuit, the control plan to be selected including a control plan for the at least one power semiconductor device corresponding to each of a plurality of operating modes of the switching boost circuit, and determines whether to turn on or off the at least one power semiconductor device based on the target control plan. Thus, the present application collects input and output signals of the switching boost circuit in real time, and determines a target control plan with the highest electrical energy conversion efficiency from a plurality of control plans to be selected based on the input and output signals of the switching boost circuit, and determines whether to turn on or off the at least one power semiconductor device of the switching boost circuit based on the target control plan. Therefore, the present application calculates the electrical energy conversion efficiency of the control scheme for the power semiconductor device in the switching boost circuit corresponding to each of the multiple operating modes of the switching boost circuit based on changes in the input signal and output signal of the switching boost circuit, selects the control scheme with the highest electrical energy conversion efficiency as the target control scheme, and determines the optimal control scheme for the power semiconductor device in real time, thereby reducing the turn-on loss and switching loss of the power semiconductor device and improving the overall electrical energy conversion efficiency of the switching boost circuit.

[0024] The input signal and output signal of the switching boost circuit preferably include the input voltage, input current, output voltage and output current of the switching boost circuit.

[0025] Specifically, the electrical signals such as the input current, input voltage, output current, and output voltage of the switching boost circuit can be collected by a collection circuit or collection device in the power supply.

[0026] As shown in Figures 2 to 5, the four boost circuits shown in Figures 2 to 5 are typical switching boost circuits. The circuit control method according to the present application is applicable to the boost circuits shown in Figures 2 to 5, and may also be applicable to other multi-phase boost circuits or switching boost circuits with other structures, but this is merely an example and the present application is not limited thereto. The input voltage and output voltage of the switching boost circuits in Figures 2 to 4 are U1 and U2, respectively, the input current and output current are I1 and I2, respectively, and the input inductance current is i L and the voltage between the drain D and source S of the field effect transistor is V s and the threshold voltage of the field-effect transistor is V g The switching boost circuit in Figure 5 is a three-phase AC input boost circuit, with input voltages U1, U2 and U3, output voltage U4 and output current I4.

[0027] The input voltage and input current input to the input terminal of the switching boost circuit are converted into electrical energy by the switching boost circuit to obtain an output voltage and output current at the output terminal. For example, the boost circuit obtains a higher output voltage after boosting the input voltage at the input terminal, thereby providing the higher output voltage to a load connected to the output terminal.

[0028] Here, the output voltage and output current of the switching boost circuit are determined by the magnitude of the load connected to its output end, the input voltage at the input end of the switching boost circuit forms a stable state, and the voltage and current of each element in the switching boost circuit can be obtained from the output voltage, output current, input voltage and circuit information of the switching boost circuit, and the electrical energy conversion efficiency of the switching boost circuit can be determined. Thus, the input voltage, output current and output voltage of the current switching boost circuit can be collected, and the electrical energy conversion efficiency of the overall switching boost circuit with different power semiconductor device control schemes can be determined based on the circuit information of the current switching boost circuit.

[0029] Here, the circuit information of the switching boost circuit includes the circuit topology structure and the electrical parameters of all elements in the circuit, including, but not limited to, the resistance value of the resistor, the capacitance value of the capacitor, and the threshold voltage of the switching tube. The power semiconductor device in the switching boost circuit generally includes a switching element, such as a field-effect transistor, a triode, a diode, or other switching tube element, but an example will be given here. The field-effect transistor may be a junction field-effect transistor (JFET) or an insulated-gate field-effect transistor (MOSFET). The JFET and MOSFET may be P-channel or N-channel, and the MOSFET may be enhancement-mode or depletion-mode.

[0030] In a preferred embodiment, as shown in FIG. 6, in the step S200, the step of determining the control plan with the highest electrical energy conversion efficiency as the target control plan from among a plurality of selection control plans based on the input signal, the output signal and the circuit information of the switching boost circuit is specifically as follows: Step S210: the switching boost circuit calculates circuit losses in a plurality of selection control schemes according to the input signal, output signal and circuit information of the switching boost circuit, the circuit losses including inductance core loss, inductance coil loss, switching tube turn-on loss, switching tube turn-off loss, switching tube turn-on state loss, rectifier diode turn-on state loss and rectifier diode switching loss; Step S220: determining an electric energy conversion efficiency for each control scheme based on the circuit loss and the output signal for each selection control scheme; and step S230 of determining the control plan with the highest electric energy conversion efficiency from the plurality of selection control plans as the target control plan.

[0031] Specifically, taking the boost DC-DC (DCDC) conversion switching boost circuit in Figure 2 as an example, to maintain stable operation of the switching boost circuit, i.e., to maintain stable output voltage and output current, there are various possibilities for the switching behavior of power semiconductor devices such as field effect transistors (FETs) and triodes based on the circuit topology and device parameters of a given switching boost circuit, and there are different control schemes for turn-on and turn-off times. Therefore, the input and output signals of the switching boost circuit and circuit information of the switching boost circuit are collected in real time, and based on this, the electrical energy conversion efficiency of the switching boost circuit is determined using different selection control schemes. The control scheme with the highest electrical energy conversion efficiency is determined as the target control scheme, and the turn-on and turn-off control schemes of the power semiconductor devices in the switching boost circuit are adjusted in real time according to the target control scheme, thereby reducing power semiconductor device losses and optimizing the efficiency of the switching boost circuit.

[0032] The power devices in a switching boost circuit generally include devices such as inductance, diodes, and switching tubes. These power devices cause energy loss when the switching boost circuit converts input current and input voltage into electrical energy. Therefore, by calculating the circuit loss according to each control scheme of the switching boost circuit and combining the output voltage and output current of the switching boost circuit, the electrical energy conversion efficiency of the switching boost circuit can be achieved.

[0033] Specifically, conventional switching boost circuits generally include inductance, switching tubes, and rectifier diodes, and the circuit losses include inductance core loss, inductance coil loss, switching tube turn-on loss, switching tube turn-off loss, switching tube turn-on state loss, rectifier diode turn-on state loss, and rectifier diode switching loss. The switching tube turn-on loss in the present application includes at least one of a triode turn-on loss, a field-effect transistor turn-on loss, or other switching tube turn-on loss. The switching tube turn-off loss includes at least one of a triode turn-off loss, a field-effect transistor turn-off loss, or other switching tube turn-off loss. The switching tube turn-on state loss includes a triode turn-on state loss, a field-effect transistor turn-on state loss, or other switching tube turn-on state loss. In one specific example, the electrical energy conversion efficiency of a boost DCDC switching boost circuit is calculated using the following formula:

[0034] η=I2U2 / (I2U2+P core +P wd +P M_on +P M_off +P M_con +P D_con +P D_sw ) where η is the electrical energy conversion efficiency, I2 is the output current, U2 is the output voltage, and P core is the inductance core loss, and P wd is the inductance loss, and P M_on is the switching tube turn-on loss, and P M_off is the switching tube turn-off loss, and P M_con is the switching tube turn-on state loss, and P D_con is the rectifier diode turn-on state loss, and P D_sw is the rectifier diode switching loss.

[0035] The circuit information of the switching boost circuit has a circuit topology structure that describes the electrical parameters of the power semiconductor devices and the connection relationships of each device in the circuit, and can determine an output signal based on the load connected to the output end of the switching boost circuit, and can combine the input signal with the circuit topology structure to obtain the current and voltage information of each power semiconductor device, and obtain the corresponding loss based on the electrical parameters and current and voltage information of each power semiconductor device. Here, the detailed calculation process of the inductance, diode, and switching tube loss is common knowledge in the field and can be calculated by those skilled in the art based on actual situations, so detailed explanations are omitted here.

[0036] In other embodiments, the calculation of the electrical energy conversion efficiency involves determining the circuit loss based on the actual circuit information of the switching boost circuit, and obtaining the corresponding electrical energy conversion efficiency based on the circuit loss, output voltage and output current. It is obvious that those skilled in the art can determine a specific calculation formula for the circuit loss based on the actual circuit information of the switching boost circuit, and this application is not limited thereto.

[0037] In a preferred embodiment, the plurality of operating modes include a discontinuous mode and / or a continuous mode, and the selecting control scheme includes a control scheme for at least one power semiconductor device corresponding to each of the discontinuous mode and / or the continuous mode of operation of the switching boost circuit. The control scheme for the at least one power semiconductor device corresponding to the continuous mode includes a continuous contact mode control scheme. The control scheme for the at least one power semiconductor device corresponding to the discontinuous mode includes an N-th valley discontinuous contact mode control scheme, where N is at least one positive integer greater than or equal to 1.

[0038] Specifically, the switching circuit can be applied to different operating modes, such as discontinuous mode, continuous mode, and boundary / boundary mode. For a switching boost circuit, discontinuous mode and continuous mode control schemes can be selected. The continuous mode control scheme includes a continuous conduction mode (CCM) control scheme, i.e., an inductance current continuous control scheme. For example, Figure 7 illustrates a CCM control scheme for a boost DCDC switching boost circuit. The discontinuous mode control scheme includes an N-th valley discontinuous conduction mode (DCM) control scheme, where N is at least one positive integer greater than or equal to 1. Specifically, Figure 8 illustrates a first valley contact DCM control scheme for a boost DCDC switching boost circuit, which realizes resonance between the junction capacitor and input inductance of the switching tube (e.g., MOSFET) after DCM, and controls the V of the MOSFET. s When the voltage resonance reaches its lowest point, the MOSFET is turned on again, thereby minimizing turn-on loss. Figures 9 and 10 show the second valley contact and third valley contact DCM control schemes for the boost DCDC switching boost circuit, where the MOSFET junction capacitor and input inductance respectively generate second and third valley contacts, and similarly, when the MOSFET Vs voltage resonance reaches its lowest point, the MOSFET is turned on again.

[0039] In a preferred embodiment, when the power of the switching boost circuit is equal to or greater than a first predetermined power, the plurality of selection control schemes include a continuous contact mode control scheme and an N-th valley intermittent contact mode control scheme.

[0040] Specifically, the Nth valley intermittent contact mode control scheme includes a first valley intermittent contact mode control scheme, a second valley intermittent contact mode control scheme, a third valley intermittent contact mode control scheme, or a third or more valley intermittent contact mode control scheme.

[0041] Here, a higher resonant frequency typically corresponds to a lighter load. This is because a lighter load results in a correspondingly shorter inductance current rise and fall times. A lower resonant frequency also means a higher switching frequency, making a single control strategy unsuitable for improving efficiency. For example, in the three-phase AC input boost circuit shown in Figure 5, the input voltage and current real-time values change periodically over time. Generally, in a sinusoidal input voltage and current circuit topology, when the voltage phase is small, the current is relatively small and the input real-time power is small. Therefore, a multi-resonant DCM valley open control strategy is used. As the input voltage phase increases, the input voltage and current increase accordingly. As the DCM resonant frequency decreases and the real-time power increases, a DCM half-resonant (i.e., first-time valley open / closed contact mode) control strategy or a direct CCM control strategy is used to achieve efficient optimization.

[0042] Therefore, in this preferred embodiment, when the power of the switching boost circuit is greater than or equal to the first predetermined power, the power of the switching boost circuit is increased, and the continuous contact mode control scheme and the N-th valley intermittent contact mode control scheme can be adopted as the selection control scheme.

[0043] The first predetermined power is preferably 50% of the maximum power of the switching boost circuit. For example, in one specific embodiment, if the maximum power of the switching boost circuit is 10 kW, the first predetermined power can be set to 5 kW. The current power of the switching boost circuit can be set based on the input and output signals of the switching boost circuit. If the current power of the switching boost circuit is 5 kW or more, a control scheme including a CCM control scheme and an N-th valley DCM control scheme can be selected.

[0044] When the power of the switching boost circuit is equal to or greater than a first predetermined power, it is preferable that the resonance frequency decrease as the power increases. Therefore, the value of N can be set to narrow the range of selectable control schemes, eliminating control schemes that do not provide high electrical energy conversion and obtaining more targetable selectable control schemes. This reduces the amount of calculation required to ensure the electrical energy conversion efficiency of the switching boost circuit and improves the efficiency of real-time determination of control schemes for semiconductor power devices. For example, when the power of the switching boost circuit is equal to or greater than the first predetermined power, N can be set to 3 or less to determine a range of selectable control schemes appropriate for the current power of the switching boost circuit. For example, if the maximum power of the switching boost circuit is 10 kW, the first predetermined power can be set to 5 kW, and N can be 3. The current power of the switching boost circuit is determined based on the input signal and output signal of the switching boost circuit. If the current power of the switching boost circuit exceeds 5kW, a control scheme including a CCM control scheme, a first valley DCM control scheme, a second valley DCM control scheme and a third valley DCM control scheme can be selected.

[0045] It is obvious that in other embodiments, the first predetermined power and the corresponding selectable control schemes can be determined based on actual conditions such as the input signal and load of the switching boost circuit, and the present application is not limited thereto.

[0046] In a preferred embodiment, when the power of the switching boost circuit is less than or equal to a second predetermined power, the plurality of selection control schemes comprises an M-th valley intermittent contact mode control scheme, and when the second predetermined power is less than the first predetermined power, M includes at least one positive integer greater than or equal to a predetermined value.

[0047] Specifically, when the power of the switching boost circuit is small, for example, when the input signal of the switching boost circuit is a sine wave, when the sine wave input signal exceeds zero, the real-time power of the input switching boost circuit is relatively small, so the multi-resonance DCM valley opening control method is more often used. Therefore, when the power of the switching boost circuit is below the second predetermined power, the electrical energy conversion efficiency of the CCM control method is generally not high, so the CCM control method can be omitted and only the control method in discontinuous mode can be considered.

[0048] The second predetermined power is preferably 30% of the maximum power of the switching boost circuit. For example, in one specific example, if the maximum power of the switching boost circuit is 10 kW, the second predetermined power can be set to 3 kW. The current power of the switching boost circuit can be determined based on the input and output signals of the switching boost circuit. If the current power of the switching boost circuit is less than 3 kW, a control method including the M-th valley DCM control method can be selected.

[0049] When the power of the switching boost circuit is below a second predetermined power, it is preferable that the resonance frequency increases as the power decreases. Therefore, by setting the predetermined value, the selection range of selectable control plans can be narrowed, control plans with low electrical energy conversion rates can be eliminated, and more targetable selectable control plans can be obtained. This reduces the amount of calculation while ensuring the electrical energy conversion efficiency of the switching boost circuit, thereby improving the efficiency of real-time determination of control plans for semiconductor power devices. For example, when the power of the switching boost circuit is below the second predetermined power, the predetermined value can be set to 3 to determine a range of selectable control plans appropriate for the current power of the switching boost circuit. For example, if the maximum power of the switching boost circuit is 10 kW, the second predetermined power can be set to 3 kW, and the predetermined value can be set to 3. According to the input signal and output signal of the switching boost circuit, the current power of the switching boost circuit is determined. If the current power of the switching boost circuit is less than 3kW, a control scheme including an M-th valley DCM control scheme can be selected, where M is at least one positive integer greater than or equal to 3, such as a 3rd valley DCM control scheme, a 4th valley DCM control scheme, a 5th valley DCM control scheme, a 6th valley DCM control scheme, etc.

[0050] It is obvious that in other embodiments, the second predetermined power and the corresponding selectable control schemes can be determined based on actual conditions such as the input signal and load of the switching boost circuit, and the present application is not limited thereto.

[0051] In a preferred embodiment, when the power of the switching boost circuit is greater than a second predetermined power and less than the first predetermined power, the plurality of selection control schemes can include an Xth valley interrupted contact mode control scheme. When N is less than M, X can be set to be greater than or equal to N and less than or equal to M. For example, in one specific example, the second predetermined power is 30% of the maximum power of the switching boost circuit, the first predetermined power is 70% of the maximum power of the switching boost circuit, N includes at least one positive integer greater than 1 and less than 3, M includes at least one positive integer greater than 4, and X can be selected as 3 and 4, i.e., the plurality of selection control schemes can include a third valley interrupted contact mode control scheme and a fourth valley interrupted contact mode control scheme. In other embodiments, those skilled in the art can select control schemes corresponding to different power levels of the switching boost circuit based on actual situations, and this application is not limited thereto.

[0052] In a preferred embodiment, the step S100 of collecting input and output signals of the switching boost circuit specifically comprises collecting input and output signals of the switching boost circuit at intervals of one or more predetermined control periods.

[0053] Specifically, a control period for collecting input and output signals of the switching boost circuit is determined in advance, the input and output signals are collected for each control period to determine a new control plan for the semiconductor power devices, and the input and output signals are collected for each of several control periods to determine a new control plan for the semiconductor power devices, thereby adjusting the control plan for the power semiconductor devices in time based on the actual input signals of the switching boost circuit and achieving continuous optimization of the electrical energy conversion efficiency of the entire switching boost circuit.Furthermore, by setting a control period to periodically adjust the control plan for the power semiconductor devices and adjusting the control plan to meet the target, the problem of high energy loss due to continuous adjustment can be avoided.

[0054] The time interval of the control period may be smaller than, larger than, or equal to the switching period of the power semiconductor device. Those skilled in the art can set the control period according to actual needs, but the present application is not limited thereto.

[0055] In a preferred embodiment, the method further comprises a step S000 of pre-forming correspondences between different input and output signals and a plurality of control strategies.

[0056] Specifically, when the circuit information of the switching boost circuit is predetermined, for input and output signals of different input voltages, output voltages, and output currents, the electrical energy conversion efficiency of the switching boost circuit according to different power semiconductor device control schemes is predetermined, and the control scheme with the highest electrical energy conversion efficiency is determined. The different input and output signals are associated with the control scheme with the highest electrical energy conversion efficiency, thereby forming a correspondence relationship between the different input and output signals and the multiple control schemes. Thus, in actual application, when the input and output signals of the switching boost circuit are collected in real time, a target control scheme can be obtained by finding a control scheme corresponding to the collected input and output signals from the correspondence relationship. In a preferred embodiment, the response speed of determining and adjusting the power semiconductor device control scheme in real time based on the correspondence relationship between the predetermined input and output signals and the control schemes can be improved.

[0057] In one or more embodiments, a table is formed by correlating the output voltage and output current signals and input voltages under a plurality of typical load conditions with corresponding control schemes as two values. In practical application, the input voltage, output voltage, and output current of the switching boost circuit obtained by collection can be directly searched for the corresponding control scheme in the table and used as the target control scheme to perform switch control on the power semiconductor device.

[0058] In another embodiment, to determine a target control scheme according to any input signal and output signal, an interpolation process is performed on the determined correspondence relationships between different input signals and output signals and a plurality of control schemes, and a corresponding curve is fitted between the different input signals and output signals and the control schemes. In practical application, the input voltage, output voltage, and output current of the switching boost circuit obtained by collection can be directly determined as a target control scheme based on the corresponding curve, and the corresponding control scheme can be implemented to control the switching of the power semiconductor device.

[0059] In a preferred embodiment, as shown in FIG. 11, the step S000 of forming a correspondence between different input signals and output signals and a plurality of control schemes specifically includes: Step S010: collecting different input signals and output signals of a switching boost circuit; Step S020: determining electrical energy conversion efficiencies under a plurality of control schemes for different input signals and output signals; and step S030 of associating the different input and output signals with the control schemes that have the highest electrical energy conversion efficiency.

[0060] Specifically, in the process of pre-forming the correspondence relationship between different input signals and output signals and multiple control schemes, different input signals and output signals of the switching boost circuit are collected in an experiment or history control process to determine the electric energy conversion efficiency of multiple control schemes for different input signals and output signals, and the control scheme with the highest electric energy conversion efficiency is determined as the target control scheme, and the different input signals and output signals are associated with the control scheme with the highest corresponding electric energy conversion efficiency to form the correspondence relationship.

[0061] In one or more embodiments, when determining the electrical energy conversion efficiency under multiple control schemes for different input and output signals, the input voltage, input current, output voltage, and output current of the switching boost circuit under different control schemes can be collected during an experiment or historical control process, and the electrical energy conversion efficiency of the switching boost circuit can be determined based on the signals input to and output from the switching boost circuit.

[0062] In another embodiment, when determining the electric energy conversion efficiency under multiple control schemes for different input signals and output signals, the circuit loss under multiple control schemes for different input signals and output signals can be first determined, and then the electric energy conversion efficiency can be obtained based on the circuit loss and the output current and output voltage of the input signals and output signals. For example, in the boost DC-DC converter circuit of Figure 2, the circuit loss includes the inductance core loss, the inductance coil loss, the switching tube turn-on loss, the switching tube turn-off loss, the switching tube turn-on state loss, the rectifier diode turn-on state loss, and the rectifier diode switching loss.

[0063] Based on the same principle, this embodiment discloses a circuit control unit, which includes a signal acquisition module 11, a control adjustment module 12 and a switching control module 13, as shown in FIG.

[0064] The signal collecting module 11 collects the input and output signals of the switching boost circuit.

[0065] The control adjustment module 12 determines the control scheme with the highest electrical energy conversion efficiency from a plurality of control schemes to be selected as the target control scheme based on the input signal, the output signal and circuit information of the switching boost circuit, and the control scheme to be selected includes a control scheme for at least one power semiconductor device corresponding to each operating mode among a plurality of operating modes of the switching boost circuit.

[0066] The switching control module 13 controls the turn-on and turn-off of at least one power semiconductor device according to a target control scheme.

[0067] In a preferred embodiment, the control adjustment module 12 specifically calculates the circuit loss of the switching boost circuit in multiple selection control schemes based on the input signal, output signal and circuit information of the switching boost circuit, where the circuit loss includes the inductance core loss, the inductance coil loss, the switching tube turn-on loss, the switching tube turn-off loss, the switching tube turn-on state loss, the rectifier diode turn-on state loss and the rectifier diode switching loss, determines the electric energy conversion efficiency of each control scheme based on the circuit loss and output signal of each selection control scheme, and determines the control scheme with the highest electric energy conversion efficiency among the multiple selection control schemes as the target control scheme.

[0068] In a preferred embodiment, the multiple modes of operation include an intermittent mode and / or a continuous mode.

[0069] The selection control scheme comprises a control scheme for at least one power semiconductor device corresponding to each operation mode in the discontinuous mode and / or the continuous mode of the switching boost circuit.

[0070] The control scheme for the at least one power semiconductor device corresponding to the continuous conduction mode comprises a continuous conduction mode control scheme.

[0071] The control scheme for the at least one power semiconductor device corresponding to the discontinuous mode comprises an N-th valley discontinuous contact mode control scheme, where N is at least one positive integer greater than or equal to 1.

[0072] In a preferred embodiment, when the power of the switching boost circuit is equal to or greater than a first predetermined power, the plurality of selection control schemes include a continuous contact mode control scheme and an N-th valley intermittent contact mode control scheme.

[0073] In a preferred embodiment, when the power of the switching boost circuit is less than a second predetermined power, the plurality of selection control schemes comprises an M-th valley intermittent contact mode control scheme, and when the second predetermined power is less than the first predetermined power, M comprises at least one positive integer greater than or equal to a predetermined value.

[0074] In a preferred embodiment, the signal collecting module 11 specifically collects the input and output signals of the switching boost circuit every one or more predetermined control periods.

[0075] In a preferred embodiment, the control adjustment module 12 pre-establishes correspondences between different input and output signals and a plurality of control strategies.

[0076] In a preferred embodiment, the control adjustment module 12 specifically collects different input signals and output signals of the switching boost circuit, determines the electrical energy conversion efficiency of multiple control schemes for the different input signals and output signals, and associates the different input signals and output signals with the control scheme with the highest electrical energy conversion efficiency.

[0077] The principle by which this unit solves the problem is similar to that of the above method, and therefore the implementation of this unit can refer to the implementation of the above method, and therefore overlapping explanations will be omitted.

[0078] Based on the same principle, this embodiment discloses a power supply device, which comprises a switching boost circuit and a circuit control unit described in this embodiment.

[0079] The principle by which this device solves the problem is similar to that of the above method, and therefore the implementation of this device can refer to the implementation of the above method, and therefore overlapping explanations will be omitted.

[0080] The systems, devices, modules, or units described in the above embodiments may be specifically implemented by a computer core or physical object, or by a computer program product having certain functions. As a typical device, they may be implemented in a computer device, specifically, the computer device may be, for example, a personal computer, a laptop computer, a mobile phone, a camera phone, a smartphone, a PDA, a media player, a navigation device, an email device, a game console, a tablet computer, a wearable device, or any combination of such devices.

[0081] A computer device according to a typical embodiment specifically includes a memory, a processor, and a computer program stored in the memory and operable on the processor, and when the program is executed by the processor, the client-executed method described above is performed, or when the program is executed by the processor, the server-executed method described above is performed.

[0082] Below, FIG. 13 illustrates a structural schematic diagram of a computer device 600 according to an embodiment of the present application.

[0083] 13, a computer system 600 includes a central processor (CPU) 601 that executes appropriate operations and processes based on programs stored in a read only memory (ROM) 602 or programs loaded from a storage unit 608 into a random access memory (RAM) 603. The RAM 603 stores various programs and data necessary for the operation of the system 600. The CPU 601, the ROM 602, and the RAM 603 are interconnected by a bus 604. An input / output (I / O) interface 605 is also connected to the bus 604.

[0084] An input unit 606 such as a keyboard, a mouse, etc., an output unit 607 including a CRT, an LCD, etc. and speakers, a storage unit 608 including a hard disk, etc., and a communication unit 609 including a network interface card such as a LAN card or a modem, are connected to the I / O interface 605. The communication unit 609 executes communication processing via, for example, the Internet network. A drive unit 610 is also connected to the I / O interface 605 as needed. A removable medium 611 such as a disk, CD, magnetic disk, or semiconductor memory is loaded into the drive unit 610 as needed, and a computer program to be read from the medium is loaded into, for example, the storage unit 608 as needed.

[0085] In particular, according to embodiments of the present application, the processes described with reference to the flowcharts may be implemented by a computer software program. For example, embodiments of the present application may comprise a computer program product, which may comprise a computer program tangibly embodied on a machine-readable medium, the computer program comprising program code for performing the methods illustrated in the flowcharts. In such embodiments, the computer program may be downloaded and loaded from a network via the communication unit 609 and / or loaded from a removable medium 611.

[0086] Computer-readable media include volatile and nonvolatile, portable and non-portable media, and may store information using any method or technology. Information may be computer-readable commands, data structures, program modules, or other data. Examples of computer storage media include, but are not limited to, phase-change memory (PRAM), static random access memory (SRAM), dynamic random access memory (DRAM), other types of RAM, ROM (ROM), EEPROM, flash or other memory technology, compact disc read-only memory (CD-ROM), DVD or other optical memory, magnetic cassette tape, tape disk memory or other magnetic storage devices, or any other non-transmission medium capable of storing information accessible by a computing device. As defined herein, computer-readable media does not include transitory media such as modulated data signals and carrier waves.

[0087] For convenience of description, the above-mentioned device will be described by dividing it into units according to their functions. Of course, when implementing this application, the functions of each unit can be realized by the same or multiple pieces of software and / or hardware.

[0088] This application has been described based on flowcharts and / or block diagrams of methods, apparatuses (systems), and computer program products according to embodiments of this application. Each flow and / or block of the flowcharts and / or block diagrams, and combinations of flows and / or blocks of the flowcharts and / or block diagrams, can be implemented by computer program commands. Such computer program commands can be provided to a processor of a universal computer, special purpose computer, embedded processor, or other programmable data processing device to generate an apparatus, where the commands executed by the processor of the computer or other programmable data processing device can implement the specified function of one or more flows of the flowcharts and / or one or more blocks of the block diagrams.

[0089] Such computer program instructions may be stored in a computer-readable memory to guide a computer or other programmable data processing apparatus to operate in a particular manner, and the commands stored in the computer-readable memory may produce an article of manufacture comprising a command device that can implement the specified functions of one or more steps in the flowcharts and / or one or more blocks in the block diagrams.

[0090] Such computer program instructions may be loaded into a computer or other programmable data processing device to execute a series of operational steps on the computer or other programmable device to generate computer-implemented processes, thereby providing steps that implement the specified functions of one or more flows in the flowcharts and / or one or more blocks in the block diagrams by the commands executable on the computer or other programmable device.

[0091] The technical terms "comprise," "contain," or any other variant thereof, shall have their ordinary meaning in referring to a process, method, product, or apparatus comprising a set of elements, but are not limited to, including other elements not listed herein or elements inherent in such a process, method, product, or apparatus. Unless otherwise specified, the term "comprises one of" does not exclude the presence of other identical elements in a process, method, product, or apparatus comprising the element.

[0092] As will be readily apparent to those skilled in the art, the embodiments of the present application may be formed as a method, a system, or a computer program product. Thus, the present application may be formed as a hardware embodiment, a software embodiment, or an embodiment combining software and hardware. Alternatively, the present application may be formed as a computer program product embodied on one or more computer-usable storage media (including, but not limited to, disk memory, CD-ROM, optical memory, etc.) containing computer-usable program code.

[0093] This application may be described in the general context of computer-executable commands, such as program modules, executed by a computer. Generally, program modules may include routines, programs, objects, assemblies, data structures, etc. that perform particular operations or implement particular abstract data types. This application may be implemented in a distributed computing environment, where operations may be performed by remote processing devices that are linked through a communications network. In a distributed computing environment, program modules may be located on both local and remote computer storage media, including storage devices.

[0094] In this specification, all embodiments are described in a progressive manner, and the same or similar parts between the embodiments can be referred to, and each embodiment mainly describes the differences from other embodiments. In particular, since the system embodiments are mostly similar to the method embodiments, they will be briefly described, and for related content, please refer to the partial description of the method embodiments.

[0095] The above is merely an example of the present application, and the present application is not limited thereto. The present application may be variously amended and modified by those skilled in the art. Any amendments, equivalent replacements, improvements, etc. made within the scope of the concept and principles of the present application should be understood to fall within the scope of the claims of the present application.

Claims

1. A circuit control method applied to a power supply device, the power supply device including a switching boost circuit, the switching boost circuit including at least one power semiconductor device; The circuit control method includes: collecting input and output signals of the switching boost circuit; determining a control plan with the highest electrical energy conversion efficiency as a target control plan from a plurality of control plans for selection based on the input signal, the output signal and circuit information of the switching boost circuit, wherein the control plans for selection include control plans for the at least one power semiconductor device corresponding to each of a plurality of operation modes of the switching boost circuit; and controlling the turn-on and turn-off of the at least one power semiconductor device based on the target control scheme.

2. determining a control plan having the highest electrical energy conversion efficiency as a target control plan from a plurality of selection control plans based on the input signal, the output signal, and circuit information of the switching boost circuit; Calculating circuit losses in a plurality of selection control schemes of the switching boost circuit according to the input signal, output signal and circuit information of the switching boost circuit, wherein the circuit losses include inductance core loss, inductance coil loss, switching tube turn-on loss, switching tube turn-off loss, switching tube turn-on state loss, rectifier diode turn-on state loss and rectifier diode switching loss; determining an electric energy conversion efficiency for each of the control schemes based on a circuit loss and an output signal for each of the selected control schemes; 2. The circuit control method according to claim 1, further comprising: determining a control plan having the highest electric energy conversion efficiency from among the plurality of selection control plans as a target control plan.

3. the plurality of operating modes includes an intermittent mode and / or a continuous mode; the selecting control scheme includes a control scheme for the at least one power semiconductor device corresponding to each of the operation modes of the switching boost circuit, that is, a discontinuous mode and / or a continuous mode; The control scheme for the at least one power semiconductor device corresponding to the continuous mode includes a continuous contact mode control scheme; The circuit control method according to claim 1 or 2, characterized in that the control scheme for the at least one power semiconductor device corresponding to the intermittent mode includes an Nth valley intermittent contact mode control scheme, where N includes at least one positive integer greater than or equal to 1.

4. The circuit control method of claim 3, characterized in that when the power of the switching boost circuit is greater than or equal to a first predetermined power, the plurality of selection control schemes include a continuous contact mode control scheme and an Nth valley intermittent contact mode control scheme.

5. The circuit control method of claim 4, characterized in that when the power of the switching boost circuit is less than a second predetermined power, the multiple selection control schemes include an Mth valley intermittent contact mode control scheme, the second predetermined power is less than the first predetermined power, and M includes at least one positive integer greater than or equal to a predetermined value.

6. Collecting the input and output signals of the switching boost circuit includes:

2. The circuit control method according to claim 1, further comprising collecting input and output signals of the switching boost circuit every one or more predetermined control periods.

7. 2. The circuit control method according to claim 1, further comprising: forming a correspondence relationship between different input signals and output signals and a plurality of control schemes in advance.

8. A circuit control unit applicable to a power supply device, the power supply device including a switching boost circuit, the switching boost circuit including at least one power semiconductor device; The circuit control unit a signal acquisition module for acquiring the input and output signals of the switching boost circuit; a control adjustment module that determines a control plan with the highest electrical energy conversion efficiency as a target control plan from a plurality of control plans to be selected based on the input signal, the output signal and circuit information of the switching boost circuit, the control adjustment module including a control plan for the at least one power semiconductor device corresponding to each of a plurality of operation modes of the switching boost circuit; a switching control module for controlling the turn-on and turn-off of the at least one power semiconductor device based on the target control scheme.

9. A power supply device comprising a switching boost circuit and the circuit control unit according to claim 8.

10. A computer device including a memory, a processor, and a computer program stored in the memory and operable on the processor, A computer device characterized in that the processor executes the method of any one of claims 1 to 7 when executing the program.

11. A computer-readable medium having a computer program stored thereon, A computer-readable medium, characterized in that when the program is executed by a processor, the method according to any one of claims 1 to 7 is performed.

12. A computer program product comprising a computer program which, when executed by a processor, performs the method according to any one of claims 1 to 7.

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