Vertically interconnected microcomponents and method for producing vertically interconnected microcomponents - Patent Application 20070122999

Abstract

The present invention relates to a vertically interconnected microcomponent adapted for radio frequency signal transmission, preferably for use in a three-dimensional integrated circuit, the vertically interconnected microcomponent comprising: a glass substrate (10) having a first side (12) and a second side (14) opposite the first side (12); at least one inner feedthrough connector (100) formed in the glass substrate (10); and an outer feedthrough connector structure (200) formed in the glass substrate (10) and surrounding the at least one inner feedthrough connector (100), The outer feedthrough connector structure (100) comprises an inner cavity (110) in the glass substrate (10) extending from a first side (12) to a second side (14) of the glass substrate (10), the inner cavity (110) being completely or partially filled with a solid conductor material (120), and the outer feedthrough connector structure (200) comprises one or more outer cavities (210) in the glass substrate (10) extending from the first side (12) to the second side (14) of the glass substrate (10), the one or more outer cavities (210) each being completely or partially filled with a solid conductor material (220).

Description

[Technical Field]

[0001] The present invention relates to vertically interconnected microcomponents adapted for radio frequency signal transmission that can be used in three-dimensional integrated circuits. [Background technology]

[0002] In the field of integrated circuits, three-dimensional structuring systems and microsystems are becoming increasingly relevant technologies for increasing integration density. Vertical interconnection of such layered systems can be achieved by interconnect components with hole structures, in which materials are deposited in a multi-stage process to form vertical transmission lines.

[0003] For example, Chinese Patent Application Publication No. 111180423 discloses a mixed-based through-hole micro-coaxial structure for vertical interconnection of radio frequency microsystems and a manufacturing method thereof, in which a silicon wafer is provided with a TSV hole structure, a seed layer is disposed on the inner wall of the TSV hole structure and completely covers the inner wall of the TSV hole structure, an insulating layer is disposed on the seed layer and completely covers the seed layer, the TSV hole structure is filled with a glass medium, a through-hole is formed in the glass medium, and a signal line is disposed in the through-hole.

[0004] However, such processes and resulting components can be quite complex, prone to defects, and expensive. Furthermore, the hole structures can still occupy a larger area than desired for high-density integration. Furthermore, fairly high dielectric losses can occur. Summary of the Invention [Problem to be solved by the invention]

[0005] It is an object of the present invention to provide a vertically interconnected microcomponent that is structurally simpler, less prone to errors, and cheaper to manufacture. The component should further comprise structures of reduced size to achieve higher integration density. Furthermore, dielectric losses should be minimized. It is also an object of the present invention to provide a method for producing such a vertically interconnected microcomponent. [Means for solving the problem]

[0006] To solve the object, the present invention discloses a vertically interconnected microcomponent adapted for radio frequency signal transmission, preferably for use in a three-dimensional integrated circuit, comprising a substrate, at least one inner feedthrough connector formed in the substrate, and an outer feedthrough connector structure formed in the substrate.

[0007] The substrate comprises a first side and a second side opposite the first side, and includes or consists of glass, i.e., the substrate is a glass substrate.

[0008] At least one inner feedthrough connector formed in the glass substrate comprises an inner cavity within the glass substrate extending from a first side to a second side of the glass substrate, the inner cavity being completely or partially filled with a solid conductive material.

[0009] The outer feedthrough connector structure formed in the glass substrate comprises one or more outer cavities in the glass substrate extending from a first side to a second side of the glass substrate, and each of the one or more outer cavities is completely or partially filled with a solid conductor material.

[0010] In other words, the disclosed vertical interconnect micro-components are based on glass substrates and are configured for radio frequency transmission, for example, with appropriate materials and dimensions.

[0011] The outer feedthrough connector structure surrounds at least one inner feedthrough connector.

[0012] In one embodiment of the present invention, the outer feedthrough connector structure comprises a plurality of spaced apart, annularly and / or symmetrically arranged outer cavities in the glass substrate extending from a first side to a second side of the glass substrate, each of the spaced apart outer cavities being completely or partially filled with a solid conductive material.

[0013] In limiting cases, the outer feedthrough connector structure may comprise two outer cavities symmetrically surrounding the inner feedthrough connector.

[0014] In another embodiment of the present invention, the outer feedthrough connector structure comprises a continuous annular outer cavity within the glass substrate extending from a first side to a second side of the glass substrate, the continuous outer cavity being completely or partially filled with a solid conductive material.

[0015] In a preferred embodiment, the inner feedthrough connector is positioned coaxially and / or symmetrically about the center of the outer feedthrough connector structure.

[0016] Preferably, the vertically interconnected microcomponent comprises only one inner through-connector. However, it is also possible for the vertically interconnected microcomponent to comprise multiple inner through-connectors, preferably arranged centrally symmetrically with respect to the outer through-connector structure. In other words, the vertically interconnected microcomponent can comprise multiple inner through-connectors surrounded by a preferably circular outer cavity.

[0017] In one embodiment, the vertical interconnect micro-component is adapted for transmission of at least one frequency in the range of 1 MHz to 300 GHz, preferably in the range of 1 GHz to 200 GHz, more preferably in the range of 5 GHz to 100 GHz.

[0018] The vertical interconnect micro-component may be adapted to define an upper cut-off frequency, i.e. the highest transmittable frequency, which is less than 300 GHz, preferably less than 200 GHz, more preferably less than 100 GHz.

[0019] In one embodiment, the vertical interconnect micro-component defines a characteristic impedance in the range of 30 ohms to 100 ohms, preferably in the range of 50 ohms to 100 ohms, and more preferably in the range of 50 ohms to 75 ohms.

[0020] The inner and outer feedthrough connector structures may have dimensions, for example, as follows:

[0021] The at least one inner feedthrough connector defines an outer diameter 2a, which may be in the range of 1 μm to λ, preferably in the range of 1 μm to 1000 μm, more preferably in the range of 1 μm to 500 μm.

[0022] The outer feedthrough connector structure defines an inner diameter 2b, which may be in the range of 1 μm to λ, preferably in the range of 1 μm to 1100 μm, more preferably in the range of 1 μm to 550 μm.

[0023] The wavelength λ is preferably in the L band, the S band, the C band, the X band, the K band, u Band, K band, K a The upper wavelength limit of a microwave band selected from the group consisting of band Q, band U, band V, band W, band F, band D, or a band above band D, wherein the band has an upper frequency limit of 300 GHz.

[0024] The outer cavity of the outer penetrating connector structure may preferably have the same size and / or shape as the inner cavity of the inner penetrating connector.

[0025] Regarding the substrate, the relative dielectric constant (ε r ) can be assumed to be less than 10, preferably in the range of 1.0 to 5.0, more preferably in the range of 3.6 to 4.6, even more preferably in the range of 3.8 to 4.3, and even more preferably in the range of 3.9 to 4.2.

[0026] In one embodiment, the thickness of the glass substrate is in the range of 0.03 mm to 3 mm, preferably in the range of 0.05 mm to 1 mm, and more preferably in the range of 0.1 mm to 0.3 mm.

[0027] The solid conductor material embedded in the inner cavity and / or one or more outer cavities may in particular be a metal, preferably a metal selected from the group consisting of copper, aluminum, gold, palladium, carbon.

[0028] In particular, as a result of the manufacturing process of the inner and / or outer cavities within the glass substrate, which is further outlined below, the inner and / or outer cavities can have particular properties.

[0029] The inner cavity and / or one or more outer cavities may, for example, preferably be characterized by a wall having a plurality of adjacent rounded, substantially hemispherical depressions.

[0030] Preferably, the plurality of rounded, substantially hemispherical depressions have abutting concave radii forming ridges.

[0031] More preferably, said ridges form polygonal boundaries when viewed in plan of said plurality of rounded, substantially hemispherical depressions.

[0032] The present invention also discloses a method for producing vertically interconnected microcomponents, in particular as outlined above.

[0033] The method includes providing a glass substrate having a first side and a second side opposite the first side.

[0034] The method further includes directing a laser beam toward one of the sides of the glass substrate to form filament-shaped flaws in a volume of the glass substrate, thereby generating at least one inner cavity and at least one outer cavity, and preferably exposing the filament-shaped flaws to an etching medium to form the at least one inner cavity and at least one outer cavity and / or generate smooth, vertical walls. The etching medium may be, for example, an alkaline or acid-based etching solution.

[0035] The method further includes embedding a solid conductor material in the at least one inner cavity and the at least one outer cavity to form at least one inner feedthrough connector and an outer feedthrough connector structure in the glass substrate.

[0036] In one embodiment of the method, embedding the solid conductor material includes depositing an adhesion layer on the walls of each cavity.

[0037] Preferably, the adhesion layer comprises titanium, chromium and / or nickel.

[0038] Preferably, the adhesion layer is deposited by physical vapor deposition, by dip coating, or by chemical vapor deposition or atomic layer deposition.

[0039] In one embodiment of the method, embedding the solid conductor material includes depositing a seed layer on the walls of each cavity or on the adhesion layer.

[0040] Preferably, the seed layer comprises copper, and more preferably, the seed layer is deposited by physical vapor deposition, by electroless plating, or by chemical vapor deposition or atomic layer deposition.

[0041] In one embodiment of the method, embedding the solid conductor material comprises completely or partially filling each cavity with the conductor material, preferably after depositing an adhesion layer and / or a seed layer.

[0042] Preferably, the conductive material that completely or partially fills the cavity comprises copper, and further preferably, the fill is applied by electroplating.

[0043] In a further embodiment of the method, after embedding the solid conductor material in the at least one inner cavity and the at least one outer cavity, excess material may be removed from at least one of the sides of the glass substrate.

[0044] The present invention further discloses an integrated circuit comprising the vertically interconnected micro-components as described above, which may be, for example, a microelectromechanical system (MEMS), an image sensor (CIS), a memory (FLASH, DRAM), a processing unit (CPU), a graphics processing unit (GPU), a power supply, a power amplifier, or a field programmable gate array (FPGA).

[0045] Furthermore, a vertically interconnected micro-component according to the present invention can comprise multiple structures of inner feed-through connectors 100 and outer feed-through connectors 200 on a single glass substrate 10 .

[0046] In the following, the invention will be explained in more detail with reference to the figures. [Brief explanation of the drawings]

[0047] [Figure 1] FIG. 1 is a top view of a first embodiment of a vertical interconnect micro-component. [Figure 2] FIG. 1 is a top view of a second embodiment of a vertical interconnect micro-component. [Figure 3] 1A-1D are side views of several steps of a method for producing vertically interconnected microcomponents. [Figure 4] FIG. 10 is a top view of a third embodiment of a vertical interconnect micro-component. [Figure 5] FIG. 10 illustrates the cutoff frequency of an exemplary vertical interconnect micro-component for varying parameters of the vertical interconnect micro-component. [Figure 6]FIG. 10 is a top view of a fourth embodiment of a vertical interconnect micro-component. DETAILED DESCRIPTION OF THE INVENTION

[0048] FIG. 1 shows a vertical interconnection microcomponent having a glass substrate 10 on which a central inner feedthrough connector 100 and an annular outer feedthrough connector structure 200 are formed.

[0049] The inner feedthrough connector 100 comprises a single inner cavity 110 in the glass substrate 10 and a solid conductor material 120 embedded therein. In this embodiment, the solid conductor material 120 is formed as a layer on the inner wall of the inner cavity 110. Thus, in this embodiment, the inner cavity 110 is partially filled with the solid conductor material 120, leaving a free space 150 in the center of the inner cavity 110. However, the free space 150 may also be filled with another material, for example, an epoxy material.

[0050] The outer feedthrough connector structure 200 comprises a plurality of individual spaced-apart outer cavities 210 arranged symmetrically around the inner feedthrough connector 100. In this embodiment, a unequal number of outer cavities 210 are arranged in a circumferential configuration around the inner connector 100. In this case, the outer cavities 210 are formed similarly to the inner cavities 110. In particular, the outer cavities 210 have the same shape and size as the inner cavities 110, and similarly, a solid conductor material 220 is embedded in each of the outer cavities 210 as a layer on their interior walls.

[0051] Together, the inner feedthrough connector 100 and the outer feedthrough connector structure 200 form a coaxial-like structure with an insulating region 20 therebetween, which is formed by the glass substrate 10 itself. The insulating region 20 therefore provides high resistance and improves the signal quality of the vertically interconnected microcomponents without requiring the application of additional insulating materials.

[0052] Preferably, the positional tolerance of the inner and / or outer cavities in the substrate is ±3 μm.

[0053] In general, the diameter of each individual cavity may be, for example, in the range of 20 to 70 μm, more preferably in the range of 40 to 50 μm. The total dimension of the outer penetrating connector structure 200 may be, for example, in the diameter range of 300 to 400 μm. The outer penetrating connector structure 200 may comprise several cavities, for example, in the range of 7 to 10. The cavities of the outer penetrating connector structure 200 may similarly have a diameter in the range of 20 to 70 μm, more preferably in the range of 40 to 50 μm. The inner and / or outer cavities are preferably round. The volumetric shape of the inner and / or outer cavities is preferably linear.

[0054] FIG. 2 shows a limiting case embodiment of a vertically interconnected microcomponent comprising an outer feedthrough connector structure 200 having two outer cavities 210 diametrically opposite a central inner feedthrough connector 100 .

[0055] FIG. 3 shows a side view of some steps of a method for producing vertically interconnected microcomponents.

[0056] In step (a), an inner cavity 110 and one or more outer cavities 210 are introduced into the glass substrate 10 .

[0057] The cavities 110, 210 can be created by directing a laser beam at one of the sides 12, 14 of the glass substrate 10 to form filamentary defects along the thickness of the glass substrate 10. The filamentary defects may then be exposed to an etching medium to form the cavities 110, 210 in the glass substrate 10.

[0058] The inner cavity 110 and the one or more outer cavities 210 each extend completely through the thickness of the glass substrate 10 , ie, from the first side 12 to the second side 14 of the glass substrate 10 .

[0059] In step (b), the inner cavity 110 and the one or more outer cavities 210 are each coated on their interior walls with a metallic seed layer 130, 230, for example comprising copper. Such a seed layer may be deposited by, for example, physical or chemical vapor deposition, atomic layer deposition, or electroless plating.

[0060] Prior to coating the inner walls of the cavities 110, 210 with the seed layer 130, 230, an adhesion layer can be applied or formed on the inner walls of the cavities 110, 210. Such an adhesion layer can comprise, for example, titanium, chromium, and / or nickel. The adhesion layer can be deposited, for example, by physical or chemical vapor deposition, atomic layer deposition, or dip coating. However, it is also envisioned that the surface of the inner walls can be modified by physically or chemically activating the surface of the walls to increase surface adhesion.

[0061] In step (c), the solid conductor material 120, 220 is embedded into the cavities 110, 210 such that the cavities 110, 210 are partially or completely filled with the solid conductor material 120, 220. In the example shown, the cavities 110, 210 are completely filled. The embedding of the solid conductor material 120, 220 is preferably performed by electroplating.

[0062] After completely or partially filling the cavities 110, 210 with conductive material, excess material can be removed from the sides 12, 14 of the glass substrate 10. This can be accomplished by etching and / or mechanical polishing. After filling the cavities and / or removing excess material, a redistribution layer can be prepared by photolithography.

[0063] FIG. 4 shows an example of the resulting embodiment of a vertical interconnect micro-component with inner and outer cavities 110 and 210 completely filled with solid conductor material 120, 220 to form inner and outer feedthrough connector structures 100, 200.

[0064] Generally, and without limitation to this embodiment, the inner feedthrough connector 100 may define an outer diameter 2a, and the outer feedthrough connector structure 200 may define an inner diameter 2b.

[0065] The characteristic impedance Z0 is given by the formula

number

[0066] A vertically interconnected microcomponent with a glass substrate can have a target impedance value for high frequency applications in the range of, for example, 50-70 Ω. For the same characteristic impedance Z0, ε r The smaller is, for example, ε r By setting ε = 4, the structure area can be reduced. Therefore, the diameter of the outer ring can be made smaller to achieve a lower impedance. In other words, it is possible to reduce the dimensions of the ring structure using glass materials. For example, ε r For low-loss glasses with characteristic impedances of 4 and 50 Ω, the ring structure dimension can be b=a*exp(1.677). Based on different matching of characteristic impedance (e.g., 50 Ω or 70 Ω), the coaxial structure can be flexibly realized by laser machining.

[0067] Figure 5 shows a diagram of the cut-off frequency of a vertical interconnect microcomponent based on a low-loss glass substrate, such as that described above. The cut-off frequency is shown for 2a and 2b in millimeters.

number

[0068] 6 shows an alternative embodiment in which the outer feedthrough connector structure 200 comprises a continuous annular outer cavity 210 within the glass substrate 10 that is completely filled with solid conductive material. However, it should be noted that the foregoing embodiment is generally preferred for ease of manufacturing as well as mechanical stability of the substrate, while still retaining the desired impedance values necessary for high frequency operation.

[0069] In summary, the present invention uses an entire glass substrate, which is structured by laser machining, often (but not always) followed by chemical etching, and the substrate itself is an insulator. Additionally, the use of low-k glass can allow for tighter packing of metal coaxial through-holes for use at high frequencies.

[0070] It should be noted that producing vertically interconnected microcomponents using glass substrates is quite unusual for those skilled in the art, as creating the necessary structures within a glass substrate can be more complex, especially compared to structuring silicon-based semiconductor materials. For example, when laser machining a ring structure, the ring dimensions may need to be carefully controlled to avoid irregularities. Furthermore, the difference in interfacial stress between the inner and outer walls of the ring structure may need to be controlled to avoid defects such as cracks that could lead to structural failure. Furthermore, laser ablation can be a relatively slow process. However, the method of the present invention requires fewer steps than structuring a silicone material and therefore may be advantageous. Furthermore, glass can inherently have a sufficiently high resistivity that no additional insulator layer is required. For example, low-loss glass may be used as the substrate.

number

Claims

1. 1. A vertical interconnect microcomponent adapted for radio frequency signal transmission, preferably for use in a three-dimensional integrated circuit, said vertical interconnect microcomponent comprising: a glass substrate (10) having a first side (12) and a second side (14) opposite the first side (12); At least one inner feedthrough connector (100) formed in the glass substrate (10); an outer feedthrough connector structure (200) formed on the glass substrate (10) and surrounding the at least one inner feedthrough connector (100); Equipped with The inner feedthrough connector (100) comprises an inner cavity (110) in the glass substrate (10) extending from the first side (12) to the second side (14) of the glass substrate (10), the inner cavity (110) being completely or partially filled with a solid conductive material (120); The outer feedthrough connector structure (200) comprises one or more outer cavities (210) in the glass substrate (10) extending from the first side (12) to the second side (14) of the glass substrate (10), each of the one or more outer cavities (210) being completely or partially filled with a solid conductor material (220). Vertically interconnected microcomponents.

2. the outer feedthrough connector structure (200) comprises a plurality of spaced apart, annularly and / or symmetrically arranged outer cavities (210) in the glass substrate (10) extending from the first side (12) to the second side (14) of the glass substrate (10), each of the spaced apart outer cavities (210) being completely or partially filled with a solid conductor material (220); and / or The outer feedthrough connector structure (200) comprises a continuous annular outer cavity (210) within the glass substrate (10) extending from the first side (12) to the second side (14) of the glass substrate (10), the continuous annular outer cavity (210) being completely or partially filled with a solid conductive material (220). The vertical interconnect microcomponent of claim 1 .

3. said inner feedthrough connector (100) is coaxially arranged in the center of said outer feedthrough connector structure (200); and / or The vertically interconnected microcomponent preferably comprises a plurality of inner feedthrough connectors (100) arranged centrally symmetrically with respect to the outer feedthrough connector structure (200), A vertical interconnect microcomponent according to any one of claims 1 to 2.

4. said vertical interconnect microcomponent is adapted for the transmission of at least one frequency in the range of 1 MHz to 300 GHz, preferably in the range of 1 GHz to 200 GHz, more preferably in the range of 5 GHz to 100 GHz; and / or the vertical interconnection micro-component defines an upper cut-off frequency, which is the highest possible transmission frequency, and the upper cut-off frequency is less than 300 GHz, preferably less than 200 GHz, and more preferably less than 100 GHz; A vertical interconnect microcomponent according to any one of claims 1 to 3.

5. said vertical interconnect microcomponent defining a characteristic impedance in the range of 30 ohms to 100 ohms, preferably in the range of 50 ohms to 100 ohms, more preferably in the range of 50 ohms to 75 ohms; A vertical interconnect microcomponent according to any one of claims 1 to 4.

6. said at least one inner feedthrough connector (100) defines an outer diameter (2a) in the range of 1 μm to λ, preferably in the range of 1 μm to 1000 μm, more preferably in the range of 1 μm to 500 μm; and / or said outer feedthrough connector structure (200) defines an inner diameter (2b) in the range of 1 μm to λ, preferably in the range of 1 μm to 1100 μm, more preferably in the range of 1 μm to 550 μm; λ is the L band, S band, C band, X band, K band ｕ Band, K band, K ａ an upper limit wavelength of a microwave band selected from the group consisting of a band Q, a band U, a band V, a band W, a band F, a band D, or a band above the band D, wherein the band has an upper limit frequency of 300 GHz; A vertical interconnect microcomponent according to any one of claims 1 to 5.

7. The relative dielectric constant (ε ｒ ) is less than 10, preferably in the range of 1.0 to 5.0, more preferably in the range of 3.6 to 4.6, even more preferably in the range of 3.8 to 4.3, even more preferably in the range of 3.9 to 4.2, and / or The thickness of the glass substrate is in the range of 0.03 mm to 3 mm, preferably in the range of 0.05 mm to 1 mm, and more preferably in the range of 0.1 mm to 0.3 mm. A vertical interconnect microcomponent according to any one of claims 1 to 6.

8. the solid conductor material (120) embedded in the inner cavity (110) and / or the one or more outer cavities is a metal, preferably a metal selected from the group consisting of copper, aluminum, gold, palladium, and carbon; A vertical interconnect microcomponent according to any one of claims 1 to 7.

9. the inner cavity (110) and / or the one or more outer cavities are preferably characterized by a wall having a plurality of rounded, substantially hemispherical depressions adjacent to one another; Preferably, the plurality of rounded, substantially hemispherical depressions have abutting concave radii forming ridges; Preferably, the ridges form polygonal boundaries when viewed in plan of the plurality of rounded, substantially hemispherical depressions. A vertical interconnect microcomponent according to any one of claims 1 to 8.

10. A method for producing vertically interconnected microcomponents, in particular according to any one of claims 1 to 9, said method comprising: providing a glass substrate (10) having a first side (12) and a second side (14) opposite the first side (12); generating at least one inner cavity (110) and at least one outer cavity (210) by directing a laser beam onto one of the side surfaces (12, 14) of the glass substrate (10) to form filamentary defects in the volume of the glass substrate (10), and preferably exposing the filamentary defects to an etching medium to form the at least one inner cavity (110) and the at least one outer cavity (210); embedding a solid conductor material (120, 220) in the at least one inner cavity (110) and the at least one outer cavity (210) to form at least one inner feedthrough connector (100) and an outer feedthrough connector structure (200) in the glass substrate (10); 1. A method for producing vertically interconnected microcomponents comprising:

11. embedding said solid conductor material (120, 220) comprises depositing an adhesive layer on the walls of each cavity (110, 210); Preferably, the adhesion layer comprises titanium, chromium and / or nickel; Preferably, the adhesion layer is deposited by physical vapor deposition or dip coating or chemical vapor deposition or atomic layer deposition. A method for producing a vertically interconnected microcomponent according to claim 10.

12. embedding the solid conductor material (120, 220) includes depositing a seed layer (130, 230) on the walls of the respective cavities (110, 210) or on the adhesion layer; Preferably, the seed layer (130, 230) comprises copper; Preferably, said seed layer (130, 230) is deposited by physical vapor deposition or electroless plating or chemical vapor deposition or atomic layer deposition. A method for producing a vertically interconnected microcomponent according to any one of claims 10 or 11.

13. said filling of said solid conductor material (120, 220) preferably comprises, after depositing an adhesion layer and / or a seed layer, completely or partially filling each cavity with a conductor material; Preferably, the conductive material comprises copper; Preferably, the filling is applied by electroplating. A method for producing a vertically interconnected microcomponent according to any one of claims 10 to 12.

14. After filling the at least one inner cavity (110) and the at least one outer cavity (210) with a solid conductor material (220), excess material is removed from at least one of the side surfaces (12, 14) of the glass substrate (10). A method for producing a vertically interconnected microcomponent according to any one of claims 10 to 13.

15. An integrated circuit comprising a vertical interconnect micro-component according to any one of claims 1 to 9, The integrated circuit is, for example, a microelectromechanical system (MEMS), an image sensor (CIS), a memory (FLASH, DRAM), a processing unit (CPU), a graphic processing unit (GPU), a power supply, a power amplifier, a field programmable gate array (FPGA), Integrated circuit.

Images