Semiconductor power module and method for manufacturing a semiconductor power module

Abstract

The semiconductor power module (10) includes a substrate (4) and at least one terminal (2) electrically coupled to the substrate (4). The semiconductor power module (10) further includes a housing having a molding (1) and a reinforcing member (3) including a material different from that of the at least one terminal (2). The molding (1) surrounds the substrate (4), the reinforcing member (3), and the at least one terminal (2) such that the at least one terminal (2) is integrally bonded and embedded within the molding (1) and partially protrudes from a wall (5) of the molding (1). The reinforcing member (3) is mechanically coupled to the at least one terminal (2) such that the at least one terminal (2) is integrally bonded and embedded in the molding (1) at least partially at a position protruding from the wall (5) of the molding (1).

Description

[Technical Field]

[0001] explanation The present disclosure relates to a semiconductor power module and a corresponding method for manufacturing the semiconductor power module. [Background technology]

[0002] Conventional semiconductor power packages include respective housings with electrical connections, and in this regard, it is a general challenge to ensure a stable housing, a secure electrical connection, and reliable functioning of the semiconductor power packages. Summary of the Invention [Means for solving the problem]

[0003] Embodiments of the present disclosure can provide a semiconductor power module with improved stability and reliable function even in high voltage power module applications. Further embodiments of the present disclosure can provide a method for manufacturing such a semiconductor power module.

[0004] According to one embodiment, a semiconductor power module includes a substrate and at least one terminal electrically coupled to the substrate. The semiconductor power module further includes a reinforcing member made of a material different from that of the at least one terminal. The semiconductor power module further includes a housing that is realized as a molded body or includes a molded body that surrounds the substrate, the reinforcing member, and the at least one terminal, such that the at least one terminal is integrally bonded to and embedded in the molded body and partially protrudes from a wall of the molded body.

[0005] The material of the reinforcing member is also different from the material of the molding. The reinforcing member is mechanically coupled to the at least one terminal so that the reinforcing member is integrally coupled to and partially embedded in the molding at at least one location or region where the at least one terminal protrudes from the wall of the molding. This location essentially defines an area within the molding near the protruding terminal. Note that the location of the boundary between the terminal and the wall of the molding does not necessarily have to be precise.

[0006] One or more terminals can function as power terminals or as auxiliary terminals, for example, used for signal wiring. One or more terminals can be made of or include copper or a copper alloy. One or more terminals can partially or completely include one or more layers of coating made of or including nickel, gold, silver, and / or other metals.

[0007] The housing may be formed as a molded block, for example, having a predetermined rectangular parallelepiped shape. The molded body can be formed from a thermoplastic or thermosetting resin, or other resin material. The molded body can be formed by injection molding, transfer molding, and / or any other applicable molding process. The molded body can include a material containing fillers such as particles or fibers. The housing molded body can partially or completely surround components of the semiconductor power module, such as the substrate, one or more terminals, and / or reinforcing members. The molded body can cover some of the aforementioned components directly or indirectly by sandwiching one or more elements. At least one terminal is partially encapsulated in the molded body, providing an exposed portion that functions as an electrical connector. The wall of the molded body from which the one or more terminals protrude can form, for example, a sidewall relative to the lateral and stacking directions of the semiconductor power module. The lateral direction can be horizontal and can relate to the main plane of the extent of the semiconductor power module, while the stacking direction can be vertical, perpendicular to the lateral direction. The housing can include additional elements to the molded body, such as a frame or cover for a resin- or gel-filled power module with one or more embedded terminals. In this configuration, the molded body forms a frame and / or a cover for the gel-filled power module.

[0008] The substrate can be formed as a lead frame. For example, the substrate can be realized as an insulated metal substrate with a metal top layer, a metal bottom layer, and a dielectric resin layer in between. The resin layer can be formed as a pre-peg sheet or a molded epoxy resin layer. The metallization of the metal top layer can be formed from films and / or sheets containing copper and / or aluminum and / or copper alloys and / or aluminum alloys. This also applies to the metal bottom layer, which can be formed, for example, as a copper and / or aluminum plate and / or corresponding alloys. The substrate can be designed as a ceramic substrate based on AlN, Si3N4, or Al2O3, with top and bottom metallization made of aluminum or copper or corresponding alloys.

[0009] Molded semiconductor packages are a cost-effective encapsulation technique widely used not only for integrated circuits but also for power semiconductor devices, especially in the low-power range. Such packages may have a transfer molding prepared from a thermosetting resin such as epoxy resin. Some of the terminals are embedded in the molding.

[0010] The terminals of such packages can have a relatively small thickness of 0.15 to 0.25 mm, which provides particular flexibility, for example, for compensating for height irregularities when mounting molded packages and for mechanical or thermomechanical stresses during module operation.

[0011] The described semiconductor power module can realize large molded power packages with large molded body sizes of up to 70 x 70 mm², applicable to high-power applications such as e-mobility. The corresponding terminals can be formed into wide power terminals with thicknesses of up to 2 mm and widths of up to 25 mm. A finding relevant to the present disclosure is that, when such power packages are attached to bus bars, for example, in inverter devices, these thick power terminals can be deformed to compensate for height tolerances. Due to their relatively large thickness, such deformation of the terminals imposes strong mechanical forces on the portions of the terminals embedded in the molded package body, and therefore on the molded body near the terminals. This entails the risk of crack formation and proliferation in the hard, brittle molded epoxy body.

[0012] The described configuration of the terminals and reinforcing members embedded in the housing molding allows for a stable semiconductor power module that allows reliable functioning even in high-voltage power module applications, even with large module bodies and terminals, with a reduced risk of crack formation, especially in critical areas where one or more terminals protrude from the molding. The corresponding semiconductor power module is also suitable for applications where the power module is exposed to mechanical and thermal stresses during installation and / or operation, even if the power module is exposed to mechanical and thermal stresses during installation and / or operation.

[0013] According to one embodiment of the semiconductor power module, the material of the reinforcing member may include an elastic modulus of 10 to 100 MPa. It is known in the context of the present disclosure that a material having such an elastic modulus can effectively compensate or dissipate bending forces.

[0014] According to one embodiment, the reinforcing member can be made of or include rubber and / or resin and / or another elastic material. Alternatively or additionally, the material of the reinforcing member can include a hard resin, a hard organic and / or inorganic material. For example, the reinforcing member can be made of or include a reinforced glass fiber material. Alternatively or additionally, the material of the reinforcing member can include a metal, such as steel. A relatively soft material for the reinforcing member can provide a damping element that smoothly dissipates mechanical forces. It can also provide better sealing against moisture and / or harmful gases, even in the case of a stronger terminal connection. A relatively hard material for the reinforcing member can provide a stability-enhancing element that absorbs mechanical forces and / or better distributes stress so that adjacent portions of the molded body are not exposed to mechanical stress or are exposed to significantly reduced mechanical stress. The choice of material for the reinforcing member to be formed can also depend on the intended use of the semiconductor power module. The reinforcing member forms a separate element from the terminal that is directly or indirectly connected to the terminal.

[0015] According to a further embodiment of the semiconductor power module, the reinforcing member may be formed by at least one of molding, coating, and printing. In this regard, a fluid or pasty soft material may be used as the raw material for the reinforcing member. Alternatively or additionally, the reinforcing member may be formed by a prefabricated element that is attached to at least one terminal by at least one of clamping, gluing, and soldering.

[0016] According to a further embodiment of the semiconductor power module, the reinforcing member is formed with a given material, thickness, width, and depth in coordination with the material, thickness, and width of the associated at least one terminal. For example, in the transverse direction, the reinforcing member may have a depth of 5 to 15 mm or up to 25 mm. The depth relates to the longitudinal direction of the flat terminal toward the molding body. Thus, the width of the reinforcing member relates to the other transverse direction along the side wall of the molding body, and the height or thickness of the reinforcing member relates to the stacking direction perpendicular to the depth and width. The thickness of the reinforcing member may have a value of 0.5 to 2.5 mm. The width of the reinforcing member may have a value of 2 to 30 mm. The width of the reinforcing member may also have a value that covers or surrounds two or more terminals.

[0017] The dimensions of the aforementioned reinforcing member may also depend on the position and shape of the reinforcing member. According to further embodiments, the reinforcing member is configured to partially or completely surround at least one terminal. The reinforcing member may be completely embedded in the molding, flush with the sidewall of the molding, or partially protrude from the molding. The reinforcing member may be disposed on one surface of the terminal or on two or more surfaces of the terminal. The reinforcing member may completely surround one or more adjacent terminals. Thus, the width of the reinforcing member may be tailored to the width of one or more terminals, each of which may have a width of up to 25 mm. The thickness of the reinforcing member may also be tailored to the thickness of one or more terminals. For example, if the terminal has a thickness of 2.5 mm, the reinforcing member may completely surround the terminal with a thickness of up to 2 mm. As a result, the combined thickness of the terminal and the reinforcing members surrounding both sides of the terminal totals 6.5 mm in the stacking direction.

[0018] According to a further embodiment of the semiconductor power module, the reinforcing member has at least one of a chamfer, a radius, and a bevel on an edge facing outward from the wall of the molding. Alternatively or additionally, the reinforcing member can have a chamfer, a radius, and / or a bevel on another edge on the inside of the molding. A finding in the context of the present disclosure is that the edge structure can beneficially affect the compensation or dissipation of undesired mechanical stresses and bending forces.

[0019] According to a further embodiment, the semiconductor power module includes two or more terminals electrically connected to the substrate and at least partially surrounded or covered by the housing molding, with each terminal integrally connected, embedded in the molding, and partially protruding from the wall of the molding. The terminals embedded in the molding thereby form a molded terminal block. The reinforcing member is configured to partially or completely surround the terminals within the molding at their exit locations. In this regard, if there are three terminals embedded in the molding adjacent to each other, each having a width of 25 mm, the reinforcing member can continuously cover and / or surround all three terminals, including a width of 80 mm or more. Therefore, in consideration of insulation issues, the material of the reinforcing member between two adjacent terminals should include an insulating material.

[0020] According to one embodiment, a method for manufacturing a semiconductor power module includes providing a substrate and at least one terminal electrically coupled to the substrate. The method further includes providing a reinforcement member including a material different from that of the at least one terminal, providing a molding in a housing, and bonding the housing to the substrate, the reinforcement member, and the at least one terminal such that the molding encloses the substrate, the reinforcement member, and the at least one terminal. The material of the reinforcement member is also different from that of the molding. The at least one terminal is integrally bonded to the molding and is at least partially embedded in the molding and partially protrudes from a wall of the molding.

[0021] The reinforcing member is mechanically coupled to the at least one terminal and is integrally bonded to and embedded in the molding at least partially at a location or region where the at least one terminal protrudes from the wall of the molding.

[0022] As a result of the described method enabling the manufacture of one embodiment of the aforementioned semiconductor power module, the described features and characteristics of the semiconductor power module are also disclosed as methods of manufacture, and vice versa. Accordingly, the present disclosure includes several aspects, and all features described with respect to one of the aspects are also disclosed herein with respect to the other aspects, even if each feature is not explicitly mentioned in the context of a particular aspect.

[0023] According to one embodiment of the method, providing a reinforcing member and coupling it to the at least one terminal comprises forming the reinforcing member on one or more surfaces of the at least one terminal, for example by molding, coating, and / or printing. Alternatively or additionally, the method comprises providing the reinforcing member as a pre-fabricated element and attaching the reinforcing member to the at least one terminal, for example by clamping, gluing, and / or soldering, and / or any other applicable joining process.

[0024] The described configuration of terminals and reinforcing members embedded in the molding allows for reduced local stress in the molding near each terminal when the terminal is bent or deformed during installation and / or operation of the power module. This is achieved by placing additional reinforcing members on and / or around the associated terminal at the end of the embedded portion of the terminal where the terminal penetrates the side wall of the molding. Because the reinforcing members are embedded in the molding except for the outer surface, the outer surface may be flush with the side wall of the molding or may extend partially outside the molding.

[0025] The reinforcing member is made of a material different from that of the power or auxiliary terminal. Depending on the intended application, the reinforcing member material may be a soft, elastic material such as rubber to provide flexibility and sealing against moisture and / or harmful gases, even in the case of stronger bending of the terminal. Alternatively, the reinforcing member may be made of a hard resin with specific mechanical properties. Other hard materials, such as metals or hard inorganic materials, are also contemplated.

[0026] The described configuration offers advantages, particularly in terms of semiconductor power modules that form relatively large molded power packages in which one or more reinforcing elements are disposed on one or more terminals. In the case of particularly thick power terminals, compensation for height tolerances associated with bending or deformation of the terminals during attachment, for example, to a busbar structure of an inverter, is provided. Despite relatively high mechanical forces acting on the embedded terminal portions, at least mechanical and / or thermomechanical stresses are compensated or dissipated, thereby preventing or reducing crack formation within the molded body. The described configuration also allows for compensation for vibrations and any other mechanical shocks during operation.

[0027] The described semiconductor power module configuration can be used, for example, in e-mobility products. Alternatively or additionally, the semiconductor power module can be used in products realized as large molded power packages, such as e-mobility products, or in power module housings or terminal blocks in which relatively thick terminals are embedded in any type of resin material. It is also possible to further use it with molded power packages.

[0028] Exemplary embodiments are described below with the aid of schematic drawings and reference numbers. The drawings show: [Brief explanation of the drawings]

[0029] [Figure 1] 1 is a schematic side view of an embodiment of a semiconductor power module. [Figure 2]FIG. 2 is another view of an embodiment of a semiconductor power module. [Figure 3] FIG. 2 is another view of an embodiment of a semiconductor power module. [Figure 4] FIG. 2 is another view of an embodiment of a semiconductor power module. [Figure 5] FIG. 2 is another view of an embodiment of a semiconductor power module. [Figure 6] FIG. 2 is another view of an embodiment of a semiconductor power module. [Figure 7] FIG. 2 is another view of an embodiment of a semiconductor power module. [Figure 8] FIG. 2 is another view of an embodiment of a semiconductor power module. [Figure 9] 1 is a method for manufacturing an embodiment of a semiconductor power module. [Figure 10] 1 is a flowchart of a method for manufacturing an embodiment of a semiconductor power module. DETAILED DESCRIPTION OF THE INVENTION

[0030] The accompanying drawings are included to provide a further understanding. It should be understood that the embodiments shown in the figures are illustrative representations and are not necessarily drawn to scale. The same reference numbers indicate elements or components having the same function. Insofar as elements or components correspond to each other in terms of their function in different figures, their description will not be repeated for each of the following figures. For clarity, elements may not in some cases be labeled with corresponding reference numbers in all figures.

[0031] FIG. 1 illustrates, in perspective view, one embodiment of a semiconductor power module 10 for a semiconductor device. According to further embodiments, the semiconductor power module 10 may include other forms than that shown in FIG. 1. The semiconductor power module 10 includes a substrate 4 and four main or power terminals 2 electrically coupled to the substrate 4 (see FIGS. 6-9). One or more auxiliary terminals, which are typically thinner and narrower than the power terminals 2, may also be present. According to alternative embodiments, the semiconductor power module 10 may include only one terminal 2 or two or more terminals 2.

[0032] The semiconductor power module 10 further comprises a reinforcing member 3 comprising a material different from that of the terminals 2 (see FIGS. 2 to 9). The semiconductor power module 10 further comprises a housing realized as or comprising a molded body 1. The molded body 1 partially or completely surrounds the substrate 4, the reinforcing member 3, and the at least one terminal 2 such that the terminals 2 are integrally bonded and embedded within the molded body 1 and partially protrude from a wall 5 of the molded body 1 (see FIGS. 2 to 9). The material of the reinforcing member 3 is also different from the material of the encapsulating molded body 1. The reinforcing member 3 is mechanically bonded to the terminals 2 such that the terminals 2 are at least partially integrally bonded and embedded in the molded body 1 at positions or regions where the terminals 2 protrude from the wall 5 of the molded body 1.

[0033] As illustrated by Figures 2 to 10 below, the semiconductor power module 10 can be realized with improved stability and allows reliable functioning even in high voltage power module applications, even for large terminals and modules with reduced risk of crack formation in critical areas during installation and operation of the semiconductor power module 10, particularly in critical areas where the terminals 2 protrude from the molded body 1.

[0034] 2 shows an embodiment of a semiconductor power module 10 viewed along a lateral direction B on a wall 5. The walls 5 and terminals 2 of the molded body 1 protrude from the side walls relative to the lateral directions B and C and the stacking direction A of the semiconductor power module 10 (see FIGS. 1 and 6 to 9). As shown in FIGS. 1 to 8, the lateral directions B and C form horizontal directions and are related to the main plane of the extent of the semiconductor power module, while the stacking direction A forms a vertical direction perpendicular to the lateral directions B and C.

[0035] According to the embodiment shown in Fig. 2, the terminals 2 are completely surrounded by the reinforcing member 3 in the illustrated transverse direction C and stacking direction A. This also applies to the embodiment shown in Fig. 3, where three terminals 3 are embedded adjacent to but spaced apart from one another in a molded body 1 that protrudes along the transverse direction B. The terminals 3 and the molded body 1 can form a terminal structure or terminal block, which can realize part of the housing of the semiconductor power module 10.

[0036] The reinforcing member 3 is configured to completely surround each terminal 2 with respect to the illustrated lateral direction C and stacking direction A. In this regard, the reinforcing member 3 should be made of or include an insulating material to prevent undesired electrical connections between the terminals 2. Alternatively, three terminals 2 can be individually surrounded by the reinforcing member 3, as shown in Figures 2 and 4, for example.

[0037] 4 shows a further embodiment of a semiconductor power module 10, in which the terminals 2 are partially surrounded by reinforcing members 3 in the illustrated lateral direction C and stacking direction A. The reinforcing members 3 are arranged directly above and on both sides of the terminals 2.

[0038] 5 shows a further embodiment of a semiconductor power module 10, in which the three terminals 2 are covered on their top and bottom surfaces, relative to the illustrated transverse direction C and stacking direction A, by a reinforcing element 3. The reinforcing element 3 comprises a first reinforcing element 31 and a second reinforcing element 32, which can form two separate plate-like elements or a common continuous U-shaped element, relative to the stacking direction A and transverse direction B.

[0039] 6 to 9 show an embodiment of a semiconductor power module 10 in respective cross-sectional views along a lateral direction C on a plane spanned by a lateral direction B and a stacking direction A. The reinforcing members 3 can be configured flush with the outer surfaces of the side walls 5 (see FIG. 6) or can protrude from the side walls 5 (see FIG. 7).

[0040] 7 further shows that the reinforcing member 3 can be provided with a chamfered or rounded or beveled surface 33 on the edge facing outward from the side wall 5 of the molding 1 and / or on any other edge on the interior of the molding 1. Such an edge structure can beneficially affect the compensation or dissipation of undesired mechanical stresses and bending forces acting on the molding 1.

[0041] 8 shows that the terminal 2 can include recesses or thinned areas 21 for further stress reduction and / or improved fixation of the reinforcing element 3, and the reinforcing member 3 can be configured in cooperation with the terminal 2 to engage with the recesses or thinned areas 21. The thinned areas 21 of the terminal 2 and the reinforcing element 3 can protrude from the molding 1, for example, for better stress relief.

[0042] 9 shows a possible manufacturing process for forming a semiconductor power module 10. The corresponding manufacturing method steps can follow the flowchart shown in FIG. 10. In step S1, a substrate 4 and at least one terminal 2 are provided, and the terminal 2 is electrically coupled to the substrate 4.

[0043] In step S2, a reinforcing member 3 is provided and attached in place to the terminal 2. For example, the reinforcing member is formed on one or more surfaces of the terminal 2 by molding, coating, and / or printing. Alternatively or additionally, the reinforcing member may comprise one or more prefabricated elements, which may be attached to the terminal 2 by clamping, gluing and / or soldering, or any other applicable joining method.

[0044] In step S3, a housing having the molded body 1 is provided and bonded to the substrate 4, the reinforcing member 3, and the terminals 2 so that the molded body 1 at least partially surrounds the substrate 4, the reinforcing member 3, and the terminals 2. Step S3 may include preparing a molding material from which the molded body 1 is formed, for example, by transfer molding or injection molding. The molding material may be a thermoplastic or thermosetting resin, or any other resin material. The material may contain a filler such as particles or fibers.

[0045] As a result, the molded body 1 is formed around the substrate 4, the reinforcing member 3, and the terminal 2 so that the terminal 2 is integrally bonded and embedded within the molded body 1 and partially protrudes from the side wall 5. The reinforcing member 1 is mechanically bonded to the terminal 2, and is integrally bonded and embedded in the molded body 1 at the position or region where the terminal 2 protrudes from the side wall 5.

[0046] The semiconductor power module 10 provides a molded power package in which the molded body 1 forms a capsule in which one or more terminals 2 are partially embedded. A reinforcing member 3 is disposed at or near the end of the embedded portion of the terminals 2 adjacent to the side wall 5 of the molded body 1.

[0047] The reinforcing element 3 forms an additional element to the associated terminal 2, for example, made of a material different from that of the terminal 2 and provided around the entire cross section of the terminal 2. The material of the reinforcing element 3 is also different from that of the molded body 1. Alternatively, the reinforcing element 3 can be provided on only one, two, or three surfaces of the terminal 2, such as the top and bottom surfaces. The additional reinforcing element 3 can be provided by an additional molding or forming process when using rubber or resin materials, but can also be provided by any other method, such as coating or printing. The molded body 1 can be transfer or injection molded using epoxy resin to form an encapsulation of the entire packaging structure.

[0048] The reinforcing members 3 contribute to reducing mechanical stress within the hard, brittle epoxy molding 1 near each terminal 2 when force is applied to the outer portion of the terminal 2, for example, by welding, screwing, or other fastening methods. Furthermore, mechanical stress during operation, caused by, for example, vibration or thermal shock, can be compensated for. Therefore, when the semiconductor power module 10 is mounted in a customer application, such as an inverter, a certain tolerance compensation is available with no or at least reduced cracking in the molding 1.

[0049] Another method of manufacturing the reinforcing member 3 is to place the terminal 2 in a forming tool so that the terminal 2 is embedded in the formed body 1, leaving a cavity at the end. The cavity can then be filled with the raw material that will form the reinforcing member 3.

[0050] Fillets or chamfers or beveled sides 33 of the reinforcing member 3 can contribute to a mechanically improved design, and the introduction of fillets or chamfers 33 can provide improved stress reduction at critical locations at the interface between the terminal 2 and the molding 1, for example, the interface adjacent the inner embedded end of the reinforcing member 3 (see FIG. 7). Alternatively or additionally, the terminal 2 can have thinned portions or areas 21 in the area of the reinforcing member 3, which can provide a further reduction in internal stresses and also improved fixation of the reinforcing member 3, especially when a relatively soft and elastic material is selected for the reinforcing member 3 (see FIG. 8).

[0051] As shown in Figures 1, 3 and 5, for example, in a lead frame arrangement, there may be several terminals 2 adjacent to each other, and two or more adjacent terminals 2 may be embedded in a common reinforcing member 3, thereby forming a kind of terminal block. In consideration of such a design, the reinforcing member 3 is made of an electrically insulating material.

[0052] The reinforcing member 3 may be prepared from any suitable material, different from the material of each terminal 2 or the molded body 1. The choice of material depends on the intended use of the reinforcing member. The material may be a soft and / or elastic material, for example, having a Young's modulus lower than that of the molded body, to provide high flexibility, while also providing improved sealing against moisture or harmful gases, even in situations where the terminal 2 is subjected to strong bending. Alternatively or additionally, the material may be a hard material with a high elastic modulus, for example, a hard resin, metal, or other hard organic or inorganic material, having a Young's modulus higher than that of the molded body. In general, the applicability of the material for the reinforcing member 3 depends on the elastic modulus or Young's modulus for the intended use.

[0053] Depending on the elastic modulus or Young's modulus of the material of the reinforcing element 3, the resulting mechanical stress, which causes the outer tip of the terminal 2 to bend, can be compensated or dissipated in different ways. For example, rubber materials can have elastic moduli ranging from 10 MPa to 100 MPa. Considering a relatively soft material with an elastic modulus of less than 1 MPa, the stress profile of the molded body 1 adjacent to the terminal 2, particularly the maximum stress in the molded body 1 adjacent to the terminal 2 and the reinforcing element 3, can be less affected. An improved configuration can be achieved by extending the bending length of the terminal 2, transferring the maximum stress from a position adjacent to the edge of the molded body 1 toward the interior of the module, adjacent to the inner interface between the reinforcing element 3 and the molded body 1. Furthermore, a reliable seal is provided even in the event of severe bending of the terminal 2.

[0054] Furthermore, when the elastic modulus of the material of the reinforcing member 3 exceeds 1 MPa, it is possible to realize a beneficial configuration that takes into account the stress situation, particularly with respect to the maximum stress in the molded body 1. The higher the elastic modulus of the reinforcing material, the more significantly the stress in the molded body 1 near the terminal can be reduced and dispersed.

[0055] Further improvement of the stress situation can be achieved by using a rigid material with a relatively high modulus of elasticity, such as a hard resin, metal, or other insulating hard material; for example, the reinforcing member 3 is made of steel with a modulus of elasticity of 200 GPa. This allows the mechanical stress to be absorbed almost entirely within the reinforcing member 3 and away from the epoxy molding 1. Therefore, the steel reinforcing member 3 transmits very little stress to the brittle molding 1, but generates higher stress levels within the reinforcing member 3.

[0056] The described and illustrated configuration is particularly suitable for large transfer molded power packages having relatively thick terminals 2, for example, having a thickness of up to 12 mm relative to the stacking direction A. Nevertheless, the described and illustrated configuration can be used in other applications where one or more terminals 2 are embedded in a resin material, such as in the context of an epoxy or gel-filled power module frame or cover or terminal block. The terminals 2 can be embedded in a body made of, for example, a fiber-reinforced thermoplastic or thermoset resin material, which is made by transfer or injection molding.

[0057] 1-9 represent exemplary embodiments of the improved semiconductor power module 10 and its manufacturing method, and therefore do not constitute an exhaustive list of all embodiments. Actual arrangements and methods may differ from the illustrated embodiments, for example, with respect to the metal substrate structure and power module. [Explanation of symbols]

[0058] Reference sign 1. Molded body 2 terminals 21 Thin-walled area of terminal 3 Reinforcement members 31 First Reinforcing Element 32 Second Reinforcing Element 33 Chamfer / Rounding of Reinforcement Members 4 boards 5 side wall 10. Semiconductor power modules A Stacking direction B. Horizontal C Lateral direction S(i) each step of the method for manufacturing a semiconductor power module

Claims

1. A semiconductor power module (10), a substrate (4) and at least one terminal (2) electrically coupled to said substrate (4); a reinforcing element (3) comprising a material different from that of said at least one terminal (2); a housing having a molding (1) surrounding the substrate (4), the reinforcing member (3), and the at least one terminal (2) so that the at least one terminal (2) is integrally bonded and embedded within the molding (1) and partially protrudes from a wall (5) of the molding (1), wherein the reinforcing member (3) is mechanically coupled to the at least one terminal (2) so that the at least one terminal (2) is at least partially integrally bonded and embedded within the molding (1) at a position where it protrudes from the wall (5) of the molding (1).

2. 2. The semiconductor power module (10) according to claim 1, wherein the reinforcing member (3) is configured to completely surround the at least one terminal (2).

3. 10. The semiconductor power module (10) according to any one of the preceding claims, wherein the reinforcing member (3) is formed by at least one of molding, coating, and printing.

4. 10. The semiconductor power module (10) according to any one of the preceding claims, wherein the reinforcing member (3) is formed by a pre-fabricated element that is attached to the at least one terminal by at least one of clamping, gluing, and soldering.

5. 10. The semiconductor power module (10) according to claim 1, wherein the reinforcing member (3) is formed with a given material, thickness, width, and / or depth in coordination with the material, thickness, and / or width of the at least one terminal (2).

6. The semiconductor power module (10) according to any one of the preceding claims, wherein the material of the reinforcing member (3) comprises an elastic modulus of 10 to 100 MPa.

7. The semiconductor power module (10) according to any one of the preceding claims, wherein the material of the reinforcing member (3) comprises at least one of rubber and resin.

8. 10. The semiconductor power module (10) according to any one of the preceding claims, wherein the material of the reinforcing member (3) comprises a metal.

9. 10. The semiconductor power module (10) according to claim 1, wherein, in a lateral direction (B) of the semiconductor power module (10), the reinforcing members (3) comprise a depth having a value of 5 to 25 mm.

10. 10. The semiconductor power module (10) according to claim 1, wherein the reinforcing element (3) has a thickness of 0.5 to 2.5 mm in relation to a stacking direction (A) perpendicular to a lateral direction (B, C) of the semiconductor power module (10).

11. 10. The semiconductor power module (10) according to claim 1, wherein the reinforcing member (3) has at least one of a chamfer, a radius, and an inclined surface (33) on an edge facing outward from the wall (5) of the molding (1).

12. 10. The semiconductor power module (1) according to claim 9, further comprising two or more terminals (2) electrically coupled to the substrate (4) surrounded by the molded body (1) of the housing such that the terminals (2) are integrally coupled, at least partially embedded in the molded body (1), and partially protrude from the wall (5) of the molded body (1), and the reinforcing member (3) is configured to partially or completely surround the terminals (2).

13. A method for manufacturing a semiconductor power module (10), comprising: - providing a substrate (4) and at least one terminal (2) electrically coupled to said substrate (4); - providing a reinforcing element (3) comprising a material different from that of said at least one terminal (2); providing the molding (1) in a housing such that the molding (1) surrounds the substrate (4), the reinforcing member (3), and the at least one terminal (2), the reinforcing member (3) and the at least one terminal (2) being partly integrally bonded to and embedded in the molding (1), and the at least one terminal (2) being partly projecting from a wall (5) of the molding (1); and bonding the housing to the substrate (4), the reinforcing member (3), and the at least one terminal (2), wherein the reinforcing member (3) is mechanically bonded to the at least one terminal (2), and the at least one terminal (2) is at least partly integrally bonded to and embedded in the molding (1) at a location where it projects from the wall (5) of the molding (1).

14. Providing the reinforcing member (3) and coupling it to the at least one terminal (2) includes:

14. The method of claim 13, comprising forming the reinforcing member (3) on one or more surfaces of the at least one terminal (2) by at least one of molding, coating, and printing.

15. Providing the reinforcing member (3) and coupling it to the at least one terminal (2) includes: - placing said at least one terminal (2) in a moulding tool providing a cavity for forming said reinforcing member (3); - forming said reinforcing member (3) by molding onto said terminal (2) in a cavity provided; The method according to claim 13, further comprising forming the molded body (1) by molding onto the terminal (2) and / or the reinforcing element (3).

16. Providing the reinforcing member (3) and coupling it to the at least one terminal (2) includes: - providing said reinforcing member (3) with a prefabricated element; - attaching the reinforcing member (3) to the at least one terminal (2) by at least one of clamping, gluing and soldering.

17. - providing said at least one terminal (2) without a reinforcing member (3); - forming said molding (1) around said at least one terminal (2) so that a cavity is available around said at least one terminal (2); - filling the cavity around the at least one terminal (2) by at least one of a filling, a material injection using a nozzle and a molding process, The method according to any one of claims 13 to 16.

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