Chlorine-containing precursors for ion implantation systems and related methods

Abstract

A system and method for generating aluminum ions for implantation into a substrate, the system and method comprising flowing a chlorine-containing gas, optionally with a hydrogen-containing co-gas and optionally a fluorine-containing co-gas, from a first vessel into an ion source chamber of an ion implantation device, the ion source chamber containing a solid aluminum target material, where aluminum ions are generated for implantation into the substrate.

Description

[Technical Field]

[0001] FIELD OF THE DISCLOSURE The present disclosure relates to the field of chlorine-containing precursors, including chlorine-containing source materials and gases, for ion implantation systems, and related methods. [Background technology]

[0002] The vaporizer of an ion implantation device must undergo heating and cooling during the ion implantation process. Heating and cooling can be lengthy processes, thereby making the ion implantation process inefficient. Additionally, the vaporizer presents material handling and cleaning challenges.

[0003] Ion implantation, as performed in semiconductor manufacturing, involves doping a chemical species into a substrate, such as a microelectronic device wafer, by bombardment of energetic ions of the chemical species onto the substrate. To generate ionic dopant species, a source of dopant, which may be in the form of, for example, a halide or hydride of the dopant species, is subjected to ionization. This ionization is performed using an ion source (also known as an "ion source") to generate an ion beam containing the dopant species. The ion source generates ions in an "ion chamber" or "arc chamber."

[0004] In certain situations, there is a need to produce aluminum ions with greater efficiency. Summary of the Invention

[0005] Some embodiments relate to methods of ion implantation. In some embodiments, the method of ion implantation includes obtaining a first container. In some embodiments, the first container includes at least one of a chlorine-containing source material, a chlorine-containing gas, a fluorine-containing co-gas, a hydrogen-containing co-gas, an inert gas, or any combination thereof. In some embodiments, the method of ion implantation includes vaporizing the chlorine-containing source material to obtain a chlorine-containing gas. In some embodiments, the method of ion implantation includes flowing at least the chlorine-containing gas from the first container into an ion source chamber of an ion implantation device. In some embodiments, the method of ion implantation includes contacting the chlorine-containing gas with a solid aluminum target material disposed in the ion source chamber. In some embodiments, the method of ion implantation includes generating aluminum ions in the ion source chamber for implantation into a substrate.

[0006] Some embodiments relate to methods of ion implantation. In some embodiments, the method of ion implantation includes obtaining a first container containing at least one of a chlorine-containing gas, a chlorine-containing source material, a fluorine-containing co-gas, a hydrogen-containing co-gas, an inert gas, or any combination thereof. In some embodiments, the method of ion implantation includes flowing at least the chlorine-containing gas into an ion source chamber of an ion implantation device. In some embodiments, the method of ion implantation includes contacting the chlorine-containing gas with a solid aluminum target material present in the ion source chamber. In some embodiments, the method of ion implantation includes generating aluminum ions in the ion source chamber for implantation into a substrate.

[0007] Some embodiments relate to an ion implantation system. In some embodiments, the ion implantation system includes an ion implantation device. In some embodiments, the ion implantation device includes an ion source chamber containing a solid aluminum source material. In some embodiments, the ion implantation device includes a vaporizer fluidly coupled to the ion source chamber. In some embodiments, the ion implantation system includes a first container. In some embodiments, the first container contains at least one of a chlorine-containing source material, a chlorine-containing gas, a fluorine-containing co-gas, a hydrogen-containing co-gas, an inert gas, or any combination thereof. In some embodiments, the first container is fluidly coupleable to an ion source chamber of the ion implantation device. In some embodiments, the ion implantation system is configured to generate aluminum ions for implantation into a substrate.

[0008] Some embodiments relate to a supply package. In some embodiments, the supply package includes a first container containing at least one of a chlorine-containing source material, a chlorine-containing gas, a fluorine-containing co-gas, a hydrogen-containing co-gas, an inert gas, or any combination thereof. In some embodiments, the first container is fluidly connectable to an ion source chamber of an ion implantation device. In some embodiments, the first container is configured to vaporize the chlorine-containing source material to produce a chlorine-containing gas. In some embodiments, the first container is configured to discharge the chlorine-containing gas to an ion source chamber, where aluminum ions are produced for implantation into a substrate.

[0009] Some embodiments of the present disclosure are described herein, by way of example only, with reference to the accompanying drawings. With particular reference now to the drawings in detail, it is emphasized that the illustrated embodiments are by way of example and for illustrative purposes of illustrating embodiments of the present disclosure. In this regard, the description made with the drawings will make apparent to those skilled in the art how embodiments of the present disclosure may be practiced. [Brief explanation of the drawings]

[0010] [Figure 1] 1 is a flowchart of a method of ion implantation, according to some embodiments. [Figure 2] 1 is a flowchart of a method of ion implantation, according to some embodiments. [Figure 3] 1 is a schematic diagram of an ion implantation system, according to some embodiments. DETAILED DESCRIPTION OF THE INVENTION

[0011] Among these disclosed benefits and improvements, other objects and advantages of the present disclosure will become apparent from the following description taken in conjunction with the accompanying drawings. While detailed embodiments of the present disclosure are disclosed herein, it should be understood that the disclosed embodiments are merely exemplary of the present disclosure, which may be embodied in various forms. Moreover, each of the examples given with respect to various embodiments of the present disclosure is intended to be illustrative and not limiting.

[0012] Any prior patents and publications referenced herein are incorporated by reference in their entirety.

[0013] Throughout the specification and claims, the following terms take on the meanings explicitly associated therewith unless the context clearly dictates otherwise. As used herein, the phrases "in one embodiment," "in an embodiment," and "in some embodiments" do not necessarily refer to the same embodiment, but may. Furthermore, as used herein, the phrases "in another embodiment" and "in some other embodiments" do not necessarily refer to different embodiments, but may. It is intended that all embodiments of the present disclosure can be combined without departing from the scope or spirit of the disclosure.

[0014] As used herein, the term "based on" is not exclusive and allows for based on additional unrecited factors unless the context clearly dictates otherwise. Furthermore, throughout this specification, the meanings of "a," "a," and "the" include plural references. The meaning of "in" includes "in" and "on."

[0015] Some embodiments relate to systems and methods for generating aluminum ions for implantation into a substrate. In some embodiments, a chlorine-containing gas is exhausted from an external vessel and delivered, optionally with one or more co-gases, to an ion source chamber containing a solid aluminum target material. Within the ion source chamber, the chlorine-containing gas, such as AlCl, is ionized to produce Al. + ions and Cl + ions, such as Al ions, which interact with the solid aluminum target material to form Al + At least some advantages of the systems and methods disclosed herein include, among others, enhancing aluminum ion beam current and improving the operating efficiency of ion implantation systems.

[0016] FIG. 1 is a flowchart of a method 100 of ion implantation, according to some embodiments.

[0017] As shown in FIG. 1, the method 100 for ion implantation may include one or more of the following steps: obtaining a first container 102; obtaining a second container 104; obtaining a third container 106; obtaining a fourth container 108; flowing 110 into an ion source chamber of an ion implantation device; contacting 112 with a solid aluminum target material; and generating ions for ion implantation into a substrate 114.

[0018] In some embodiments, the method of ion implantation includes obtaining a first container, in step 102. In some embodiments, step 102 includes obtaining a first container containing at least one of a chlorine-containing source material, a chlorine-containing gas, or any combination thereof.

[0019] The first container may contain a chlorine-containing precursor. In some embodiments, the chlorine-containing precursor comprises a chlorine-containing source material. In some embodiments, the chlorine-containing source material is a liquid. In some embodiments, the chlorine-containing source material is a solid. In some embodiments, the chlorine-containing source material is a vapor, a gas, or any combination thereof. Non-limiting examples of chlorine-containing source materials include, but are not limited to, at least one of AlCl, AlCl, or any combination thereof. AlCl may be present in the first container as a solid. In embodiments in which the first container contains a chlorine-containing source material, such as AlCl, the first container may be configured to vaporize the chlorine-containing source material. For example, in some embodiments, the first container is a vaporizer-type container configured to heat the chlorine-containing source material in the first container to generate a chlorine-containing gas and further configured to exhaust the chlorine-containing gas from the first container. In other embodiments, the chlorine-containing precursor comprises a chlorine-containing gas. Non-limiting examples of chlorine-containing gases include, but are not limited to, at least one of PCl3, PCl5, POCl3, Cl2, MoO2Cl2, WOCl4, WCl5, BCl3, HCl, SiCl4, GeCl4, AsCl3, SbCl5, GaCl3, AlCl3, Al2Cl6, or any combination thereof.

[0020] In certain embodiments of the present invention, aluminum ions are generated from an aluminum dopant source, such as a solid aluminum target, in the arc chamber in the presence of a chlorine-containing gas that comprises, consists of, or consists essentially of a chlorine-containing gas, alone or with a hydrogen-containing gas. The chlorine-containing gas flowing into the arc chamber can comprise, consist of, or consist of a specific percentage of AlCl, AlCl, Cl, or a combination thereof, relative to the total amount of chlorine-containing gas flowing into the arc chamber, and can be at least 50, 60, 70, 80, 90, 95, 98, 99, or 99.5% by volume of AlCl, AlCl, Cl, or a combination thereof. The chlorine-containing gas may optionally be flowed in combination with a hydrogen-containing gas.

[0021] In some embodiments, the first vessel contains at least one of a chlorine-containing source material, a chlorine-containing gas, a hydrogen-containing co-gas, a fluorine-containing co-gas, an inert gas, or any combination thereof.

[0022] In step 104, the method 100 of ion implantation includes obtaining a second container. In some embodiments, step 104 includes obtaining a second container containing a hydrogen-containing gas.

[0023] The second container may contain a hydrogen-containing co-gas. The hydrogen-containing co-gas may include at least one of a hydrogen-containing compound, a hydride-containing compound, or any combination thereof. Non-limiting examples of hydrogen-containing co-gas include, but are not limited to, at least one of H, PH, AsH, SiH, SiH, BH, CH, CH, NH, NH, GeH, GeH, or any combination thereof. In some embodiments, the hydrogen-containing co-gas includes a non-fluorinated gas.

[0024] In some embodiments, the hydrogen-containing gas is flowed into the ion source in an amount of 2, 5, 10, 20, 30, 40, 50, 60, 70, 80, or 90 volume percent or less of the total gas flowing into the arc chamber. In some embodiments, the hydrogen-containing gas may be varied based on its effect on the equilibrium beam current and / or source conditions. For example, if the effect on the equilibrium beam current or source conditions is generated at 50% hydrogen, the method may include flowing the hydrogen-containing gas in an amount of 45-55% (within 5 percentage points of 50%), or 40-60% (within 10 percentage points of 50%), or 30-70% (within 20 percentage points of 50%), or 20-80% (within 30 percentage points of 50%). If the maximum beam current is at or near 0% hydrogen-containing gas, exemplary methods of the present invention may include flowing the hydrogen-containing gas into the ion source in an amount of less than 20, 10, 5, or 2%.

[0025] In some embodiments, when a chlorine-containing gas is used to sputter or react aluminum ions from a solid aluminum target, a hydrogen-containing gas is used to react with residual chlorine. For example, but not limited to, hydrogen can be used to react with residual chlorine gas to form HCl, a gas that is easily pumped out of the ion source. In some embodiments, this prevents the chlorine from reacting elsewhere and potentially being corrosive to the ion source or other potential contamination.

[0026] In some embodiments, the second vessel contains at least one of a chlorine-containing source material, a chlorine-containing gas, a hydrogen-containing co-gas, a fluorine-containing co-gas, an inert gas, or any combination thereof.

[0027] In step 106, the method 100 of ion implantation includes obtaining a third vessel. In some embodiments, step 106 includes obtaining a third vessel containing a fluorine-containing gas.

[0028] The third container may contain a fluorine-containing co-gas. The fluorine-containing co-gas may include at least one of a fluorine-containing compound, a fluoride-containing compound, or any combination thereof. Non-limiting examples of fluorine-containing co-gases include BF3, PF3, PF5, GeF4, XeF2, CF4, B2F4, SiF4, Si2F6, AsF3, AsF5, XeF4, XeF6, WF6, MoF6, C n F 2n+2 , C n F 2n , C n F 2n-2 , C n H x F 2n+2-x , C n H x F 2n-x , C n H x F 2n-2-x , COF2, SF6, SF4, SeF6, NF3, N2F4, HF, F2, or any combination thereof. In some embodiments, n is an integer from 1 to 100. In some embodiments, x is 0 or an integer from 1 to 100. In some embodiments, the fluorine-containing co-gas is different from the hydrogen-containing co-gas. In some embodiments, the fluorine-containing co-gas is different from the chlorine-containing precursor.

[0029] In some embodiments, the third vessel contains at least one of a chlorine-containing source material, a chlorine-containing gas, a hydrogen-containing co-gas, a fluorine-containing co-gas, an inert gas, or any combination thereof.

[0030] In step 108, the method 100 of ion implantation includes obtaining a fourth container. In some embodiments, step 108 includes obtaining a fourth container containing an inert gas.

[0031] The fourth container may contain an inert gas, which may include at least one of helium, neon, argon, krypton, xenon, nitrogen, or any combination thereof.

[0032] In some embodiments, the fourth vessel contains at least one of a chlorine-containing source material, a chlorine-containing gas, a hydrogen-containing co-gas, a fluorine-containing co-gas, an inert gas, or any combination thereof.

[0033] In step 110, the method 100 of ion implantation includes flowing into an ion source chamber of an ion implantation device, in some embodiments, at least one of a chlorine-containing gas, a hydrogen-containing gas, a fluorine-containing gas, or any combination thereof, into an ion source chamber of the ion implantation device.

[0034] The chlorine-containing gas, hydrogen-containing gas, and fluorine-containing gas may be flowed into the ion source chamber as a mixture, or may be flowed into the ion source chamber through separate gas lines, with the chlorine-containing gas, hydrogen-containing gas, and fluorine-containing gas being mixed in the ion source chamber. In some embodiments, the flow of each of the chlorine-containing gas, hydrogen-containing gas, and fluorine-containing gas may proceed independently under vacuum or via pumps. In some embodiments, the flows are conducted under pressure, for example, at a pressure ranging from 2 Torr to 750 Torr, or any range or subrange therebetween.

[0035] In step 112, the method of ion implantation 100 includes contacting a solid aluminum target material with at least one of a chlorine-containing gas, a hydrogen-containing gas, a fluorine-containing gas, or any combination thereof.

[0036] The solid aluminum target material may include solid aluminum or an aluminum-containing material. In some embodiments, the solid aluminum target material is disposed within an ion source chamber of an ion implantation device. For example, in some embodiments, the solid aluminum target material is disposed as a solid inside the ion source chamber. The solid aluminum target material may optionally be disposed on a sidewall of the ion source chamber as part of a replaceable liner structure. In some embodiments, the solid aluminum target material is biased to a voltage for sputtering aluminum from the solid aluminum target material. In some embodiments, no bias voltage is applied to the solid aluminum target material. The solid aluminum target material may include, for example, but is not limited to, at least one of aluminum, aluminum oxide, aluminum nitride, aluminum carbide, aluminum boride, or any combination thereof. In some embodiments, the solid aluminum target material includes at least one aluminum isotope in excess of the natural abundance of such isotope.

[0037] Some embodiments of the present disclosure include, but are not limited to, specifically generating aluminum ions in an ion source chamber for implantation into a substrate. To effectively generate aluminum ions, the disclosed process includes sputtering a solid aluminum target and / or using chlorine as a reactive gas, which allows for greater production of aluminum ions.

[0038] In step 114, the method 100 of ion implantation includes generating ions for ion implantation into the substrate. In some embodiments, step 114 includes generating aluminum ions in the ion source chamber for implantation into the substrate. The aluminum ions generated in the ion source chamber for implantation are Al2 + , Al + , Al 2+ , Al 3+ or any combination thereof.

[0039] In some embodiments of the present disclosure, the production of aluminum ions may be higher compared to alternative gases for producing aluminum ions, with chlorine-containing gases offering the advantage of increased beam current and / or improved source lifetime over other gases used to produce aluminum ions.

[0040] FIG. 2 is a flowchart of a method 200 of ion implantation, according to some embodiments.

[0041] 2, the method of ion implantation 200 may include one or more of the following steps: obtaining a first container 202; obtaining a second container 204; obtaining a third container 206; obtaining a fourth container 208; vaporizing a source material in the first container 210; flowing the source material into an ion source chamber of an ion implantation device 212; contacting the source material with a solid aluminum target material 214; and generating ions for ion implantation into a substrate 216. The method of ion implantation 200 is similar to the method of ion implantation 100, except that the method of ion implantation 200 includes the step of vaporizing a source material in the first container. For simplicity, the same or similar steps will not be repeated here.

[0042] In some embodiments, the method of ion implantation 200 includes vaporizing a source material in a first vessel at step 210. In some embodiments, step 210 includes vaporizing a chlorine-containing source material to obtain a chlorine-containing gas.

[0043] Vaporization of the chlorine-containing source material may be accomplished by heating the chlorine-containing source material. For example, in some embodiments, vaporizing includes heating the chlorine-containing source material to a temperature sufficient to vaporize the chlorine-containing source material. The applied heat may be applied directly to the chlorine-containing source material or indirectly via a first vessel that heats the chlorine-containing source material. In some embodiments, the temperature is in the range of 100°C to 180°C. In some embodiments, the temperature is in the range of 60°C to 250°C, or a subrange of 60°C to 250°C. It will be appreciated that the temperature to which the chlorine-containing source material is heated may depend, among other factors, on the type of source material, the phase in which the source material exists (e.g., as a solid or as a liquid), the conditions under which the source material is stored (e.g., conditions within the first vessel and, optionally, outside the first vessel), or a combination thereof. Accordingly, in other embodiments, the temperature may vary above or below that range.

[0044] According to some embodiments of the present disclosure, vaporization of the chlorine-containing gas reduces deposits on critical surfaces within the ion source, which can extend the life of the ion source compared to conventional methods used to generate aluminum ions in ion sources. In some embodiments, there is a reduction in deposits / contamination on the surfaces of the ion source compared to conventional methods used in the art.

[0045] FIG. 3 is a schematic diagram of an ion implantation system 200 in accordance with some embodiments.

[0046] As shown in FIG. 3 , a first vessel 302 includes a vessel wall 304 enclosing an interior volume containing a chlorine-containing precursor. The first vessel 302 includes a valve head 308. In some embodiments, the valve head 308 is fluidly coupled to a mixing chamber 360 (optional) via a delivery line 372. The mixing chamber 360 is fluidly coupled to a second vessel 362 and a third vessel 364 via a delivery line 370. The second vessel 362 includes a vessel wall enclosing an interior volume containing a hydrogen-containing precursor. The second vessel includes a valve head 380 fluidly coupled to the mixing chamber 360 via a delivery line 366 and a delivery line 370. The third vessel 364 includes a vessel wall enclosing an interior volume containing a fluorine-containing precursor. The third vessel includes a valve head 382 fluidly coupled to the mixing chamber 360 via a delivery line 368 and a delivery line 370. Although not shown, in some embodiments a fourth vessel is provided that includes a vessel wall that encloses an interior volume that contains an inert gas.

[0047] The first container 302, the second container 362, and the third container 364 are configured to store and dispense a chlorine-containing gas, a hydrogen-containing gas, and a fluorine-containing gas, respectively. In embodiments in which the first container 302 contains a chlorine-containing source material, the first container 302 is configured to vaporize the chlorine-containing source material to obtain the chlorine-containing gas. Furthermore, each of the first container 302, the second container 362, and the third container 364 is fluidly connectable to the ion source chamber 316 of the ion implantation device 301. That is, for example, the first container 302, the second container 362, and the third container 364 are removably connectable to the ion implantation device 301. In some embodiments, the first container 302, the second container 362, and the third container 364 are external to the ion implantation device 301 and distinct from the vaporizer of the ion implantation device 301.

[0048] In some embodiments, the first container 302 is configured to store and dispense a chlorine-containing gas, a hydrogen-containing gas, a fluorine-containing gas, an inert gas, or any combination thereof. In some embodiments, the second container 362 is configured to store and dispense a chlorine-containing gas, a hydrogen-containing gas, a fluorine-containing gas, an inert gas, or any combination thereof. In some embodiments, the third container 364 is configured to store and dispense a chlorine-containing gas, a hydrogen-containing gas, a fluorine-containing gas, an inert gas, or any combination thereof. In some embodiments, the fourth container (not shown) is configured to store and dispense a chlorine-containing gas, a hydrogen-containing gas, a fluorine-containing gas, an inert gas, or any combination thereof. In some embodiments, the ion implantation system 300 does not include at least one of the first container 302, the second container 362, the third container 364, the fourth container (not shown), or any combination thereof.

[0049] Mixing chamber 360 is fluidly coupled to ion source chamber 301 via distribution line 312. A pressure sensor 310 and a mass flow controller 314 are disposed in distribution line 312. Although not shown, it will be understood that other monitoring and sensing components may be fluidly coupled to or disposed in at least one of distribution line 312, distribution line 372, distribution line 370, distribution line 366, distribution line 368, or any combination thereof, and may be interfaced with control means such as actuators, feedback and computer control systems, cycle timers, etc. Additionally, at least one of distribution line 312, distribution line 372, distribution line 370, distribution line 366, distribution line 368, or any combination thereof may include at least one of valves, controllers, and / or sensors for manually or automatically controlling the flow or other characteristics of material dispensed from the containers, and such valves, controllers, and / or sensors may be coupled or connected to the corresponding supply / distribution line in any suitable manner.

[0050] Such valves may in turn be coupled with valve actuators operatively linked to a central processing unit (CPU), which may be coupled in signal communication with the controllers and / or sensors described above and programmably configured to control the rate, condition, and amount of fluid dispensed from each vessel relative to one another so that the fluid entering the ion source chamber 316 from the mixing chamber 360 on line 312 has the desired composition, temperature, pressure, and flow rate for carrying out the ion implantation process.

[0051] In the illustrated embodiment, the ion implantation device 301 includes an ion source chamber 316. In some embodiments, the ion source chamber 316 contains a solid aluminum target material. The ion source chamber 316 receives fluid from line 312 and generates an ion beam 305. The ion beam 305 passes through a mass analysis unit 322, which selects desired ions and rejects unselected ions. The selected ions pass through an accelerating electrode array 324 and then deflection electrodes 326. The resulting focused ion beam impinges on a substrate element 328, which is positioned on a rotatable holder 330 attached to a spindle 332. The ion beam of dopant ions is used to dope the substrate as desired to obtain a doped structure.

[0052] The various portions of the ion implantation device 301 are evacuated through lines 318, 340, 344 via pumps 320, 342, 346, respectively.

[0053] Some embodiments relate to a supply package. In some embodiments, the supply package includes at least one of a first container, a second container, a third container, or any combination thereof.

[0054] A first container (e.g., first container 302) may contain a chlorine-containing precursor, such as a chlorine-containing source material, a chlorine-containing gas, or any combination thereof. In some embodiments, the first container is fluidly connectable to an ion source chamber of an ion implantation device. In some embodiments, the first container is configured to vaporize the chlorine-containing source material to produce a chlorine-containing gas. In some embodiments, the first container is configured to discharge the chlorine-containing gas to an ion source chamber, where aluminum ions are produced for implantation into a substrate.

[0055] A second container (such as, for example, second container 362) may contain a hydrogen-containing co-gas. In some embodiments, the second container is fluidly connectable to an ion source chamber of an ion implantation device. In some embodiments, the second container is configured to discharge the hydrogen-containing co-gas to the ion source chamber.

[0056] A third container (such as, for example, second container 364) may contain a fluorine-containing co-gas. In some embodiments, the third container is fluidly connectable to an ion source chamber of an ion implantation device. In some embodiments, the third container is configured to discharge the fluorine-containing co-gas to the ion source chamber.

[0057] Aspects

[0058] Various embodiments are described below. It should be understood that any one or more of the features described in the following embodiments can be combined with any one or more of the other embodiments.

[0059] Aspect 1. A method of ion implantation comprising: obtaining a first container containing a chlorine-containing source material; vaporizing the chlorine-containing source material to obtain a chlorine-containing gas; flowing the chlorine-containing gas from the first container to an ion source chamber of an ion implantation device; contacting the chlorine-containing gas with a solid aluminum target material disposed in the ion source chamber; and generating aluminum ions in the ion source chamber for implantation into a substrate.

[0060] Embodiment 2. The method of embodiment 1, wherein the chlorine-containing source material comprises at least one of AlCl3, Al2Cl6, or any combination thereof.

[0061] Embodiment 3. The method of any one of embodiments 1-2, wherein the vaporizing comprises heating the chlorine-containing source material to a temperature in the range of 60°C to 250°C.

[0062] Embodiment 4. The method of any one of embodiments 1 to 3, wherein the flowing comprises flowing the chlorine-containing gas at a pressure ranging from 2 Torr to 750 Torr.

[0063] Embodiment 5. The method of any one of embodiments 1 to 4, wherein the solid aluminum target material comprises at least one of aluminum, aluminum oxide, aluminum nitride, aluminum carbide, aluminum boride, or any combination thereof.

[0064] Aspect 6. The aluminum ion is Al2 + , Al + , Al 2+ , Al 3+ or any combination thereof.

[0065] Embodiment 7. The method of any one of embodiments 1 to 6, further comprising obtaining a second container containing a hydrogen-containing co-gas, and flowing the hydrogen-containing co-gas from the second container to an ion source chamber of the ion implantation device.

[0066] Embodiment 8. The method of any one of embodiments 1 to 7, wherein the hydrogen-containing co-gas comprises at least one of H2, PH3, AsH3, SiH4, Si2H6, B2H6, CH4, C2H6, NH3, N2H4, GeH4, Ge2H6, or any combination thereof.

[0067] Embodiment 9. The method of any one of embodiments 1 to 8, further comprising obtaining a third container containing a fluorine-containing co-gas, and flowing the fluorine-containing co-gas from the third container to an ion source chamber of the ion implantation device.

[0068] Aspect 10. The fluorine-containing co-gas is BF3, PF3, PF5, GeF4, XeF2, CF4, B2F4, SiF4, Si2F6, AsF3, AsF5, XeF4, XeF6, WF6, MoF6, C n F 2n+2 , C n F 2n , C n F 2n-2 , C n H x F 2n+2-x , C n H x F 2n-x , C n H x F 2n-2-x 10. The method of embodiment 9, wherein the compound comprises at least one of COF2, SF6, SF4, SeF6, NF3, N2F4, HF, F2, or any combination thereof, wherein n is one or more and x is 0 or greater.

[0069] Embodiment 11. The method of any one of embodiments 1 to 10, further comprising: obtaining a fourth container containing an inert gas, wherein the inert gas comprises at least one of helium, neon, argon, krypton, xenon, nitrogen, or any combination thereof; and flowing the inert gas from the fourth container into an ion source chamber of the ion implantation device.

[0070] Embodiment 12. A method of ion implantation comprising obtaining a first container containing a chlorine-containing gas, flowing the chlorine-containing gas into an ion source chamber of an ion implantation device, contacting the chlorine-containing gas with a solid aluminum target material present in the ion source chamber, and generating aluminum ions in the ion source chamber for implantation into a substrate.

[0071] Embodiment 13. The method of embodiment 12, wherein the chlorine-containing gas comprises at least one of PCl3, PCl5, POCl3, Cl2, MoO2Cl2, WOCl4, WCl5, BCl3, HCl, SiCl4, GeCl4, AsCl3, SbCl5, GaCl3, AlCl3, Al2Cl6, or any combination thereof.

[0072] Embodiment 14. The method of any one of embodiments 12 to 13, wherein the solid aluminum target material comprises at least one of aluminum, aluminum oxide, aluminum nitride, aluminum carbide, aluminum boride, or any combination thereof.

[0073] 15. The aluminum ion is Al2 + , Al + , Al 2+ , Al 3+ 15. The method of any one of aspects 12 to 14, comprising at least one of:

[0074] Embodiment 16. The method of any one of embodiments 12 to 15, further comprising obtaining a second container containing a hydrogen-containing co-gas, and flowing the hydrogen-containing co-gas from the second container into an ion source chamber of the ion implantation device.

[0075] Embodiment 17. The method of embodiment 16, wherein the hydrogen-containing co-gas comprises at least one of H2, PH3, AsH3, SiH4, Si2H6, B2H6, CH4, C2H6, NH3, N2H4, GeH4, Ge2H6, or any combination thereof.

[0076] Embodiment 18. The method of any one of embodiments 12 to 17, further comprising obtaining a third container containing a fluorine-containing co-gas, and flowing the fluorine-containing co-gas from the third container to an ion source chamber of the ion implantation device.

[0077] Aspect 19. The fluorine-containing co-gas is BF3, PF3, PF5, GeF4, XeF2, CF4, B2F4, SiF4, Si2F6, AsF3, AsF5, XeF4, XeF6, WF6, MoF6, C n F 2n+2 , C n F 2n , C n F 2n-2 , C n H x F 2n+2-x , C n H x F 2n-x , C n H x F 2n-2-x , COF2, SF6, SF4, SeF6, NF3, N2F4, HF, F2, or any combination thereof, wherein n is one or more and x is 0 or greater.

[0078] Embodiment 20. The method of any one of embodiments 12 to 19, further comprising: obtaining a fourth container containing an inert gas, wherein the inert gas comprises at least one of helium, neon, argon, krypton, xenon, nitrogen, or any combination thereof; and flowing the inert gas from the fourth container into an ion source chamber of the ion implantation device.

[0079] Embodiment 21. An ion implantation system including an ion implantation device including an ion source chamber containing a solid aluminum source material and a vaporizer fluidly coupled to the ion source chamber, and a first container containing at least one of a chlorine-containing source material, a chlorine-containing gas, or any combination thereof, and fluidly coupleable to the ion source chamber of the ion implantation device, configured to generate aluminum ions for implantation into a substrate.

[0080] Embodiment 22. The ion implantation system of embodiment 21, wherein the solid aluminum source material comprises at least one of aluminum, aluminum oxide, aluminum nitride, aluminum carbide, aluminum boride, or any combination thereof.

[0081] Embodiment 23. The ion implantation system of any one of embodiments 21-22, wherein the chlorine-containing source material comprises at least one of AlCl3, Al2Cl6, or any combination thereof.

[0082] Embodiment 24. The ion implantation system of any one of embodiments 21 to 23, wherein the chlorine-containing gas comprises at least one of PCl3, PCl5, POCl3, Cl2, MoO2Cl2, WOCl4, WCl5, BCl3, HCl, SiCl4, GeCl4, AsCl3, SbCl5, GaCl3, AlCl3, Al2Cl6, or any combination thereof.

[0083] Embodiment 25. The ion implantation system of any one of embodiments 21 to 24, further comprising a second vessel containing a hydrogen-containing co-gas, the second vessel being fluidly connectable with the ion source chamber of the ion implantation device.

[0084] Embodiment 26. The ion implantation system of embodiment 25, wherein the hydrogen-containing co-gas comprises at least one of H2, PH3, AsH3, SiH4, Si2H6, B2H6, CH4, C2H6, NH3, N2H4, GeH4, Ge2H6, or any combination thereof.

[0085] Embodiment 27. The ion implantation system of any one of embodiments 21 to 26, further comprising a third vessel containing a fluorine-containing co-gas, the third vessel being fluidly connectable to the ion source chamber of the ion implantation device.

[0086] Aspect 28. The fluorine-containing co-gas is BF3, PF3, PF5, GeF4, XeF2, CF4, B2F4, SiF4, Si2F6, AsF3, AsF5, XeF4, XeF6, WF6, MoF6, C n F 2n+2 , C n F 2n , C n F 2n-2 , C n H x F 2n+2-x , C n H x F 2n-x , C n H x F 2n-2-x , COF2, SF6, SF4, SeF6, NF3, N2F4, HF, F2, or any combination thereof, wherein n is one or more and x is 0 or greater.

[0087] Embodiment 29. The ion implantation system of any one of embodiments 21 to 28, further comprising a fourth container containing an inert gas, wherein the inert gas comprises at least one of helium, neon, argon, krypton, xenon, nitrogen, or any combination thereof, and wherein the fourth container is fluidly coupled to an ion source chamber of the ion implantation device.

[0088] Embodiment 30. A supply package including a first container containing a chlorine-containing source material, the first container fluidly connectable to an ion source chamber of an ion implantation device, the first container configured to vaporize the chlorine-containing source material to produce a chlorine-containing gas and to discharge the chlorine-containing gas into the ion source chamber, wherein aluminum ions are produced in the ion source chamber for implantation into a substrate.

[0089] Embodiment 31. The supply package of embodiment 30, further comprising a second container containing a hydrogen-containing co-gas, the second container being fluidly connectable to an ion source chamber of the ion implantation device and configured to discharge the hydrogen-containing co-gas into the ion source chamber.

[0090] Embodiment 32. The supply package of embodiment 31, wherein the hydrogen-containing co-gas comprises at least one of H2, PH3, AsH3, SiH4, Si2H6, B2H6, CH4, C2H6, NH3, N2H4, GeH4, Ge2H6, or any combination thereof.

[0091] Embodiment 33. The supply package of any one of embodiments 30 to 32, further comprising: a third container containing a fluorine-containing co-gas, the third container being fluidly connectable to an ion source chamber of the ion implantation device and configured to discharge the fluorine-containing co-gas into the ion source chamber.

[0092] Aspect 34. The fluorine-containing co-gas is BF3, PF3, PF5, GeF4, XeF2, CF4, B2F4, SiF4, Si2F6, AsF3, AsF5, XeF4, XeF6, WF6, MoF6, C n F 2n+2 , C n F 2n , C n F 2n-2 , C n H x F 2n+2-x , C n H x F 2n-x , C n H x F 2n-2-x , COF2, SF6, SF4, SeF6, NF3, N2F4, HF, F2, or any combination thereof, wherein n is one or more and x is 0 or greater.

[0093] Embodiment 35. The supply package of any one of embodiments 30 to 34, further comprising a fourth container containing an inert gas, the inert gas comprising at least one of helium, neon, argon, krypton, xenon, nitrogen, or any combination thereof, the fourth container being fluidly connectable to an ion source chamber of the ion implantation device, and the fourth container being configured to discharge the inert gas into the ion source chamber. It should be understood that changes may be made in details, particularly with respect to the materials of construction used and the shape, size and arrangement of parts without departing from the scope of the present disclosure. The specification and described embodiments are examples, the true scope and spirit of the present disclosure being indicated by the appended claims. [Example]

[0094] A container containing AlCl3 (solid) is fluidly coupled to the ion source chamber of an ion implantation device. The container is heated to vaporize the AlCl3 (solid), producing AlCl3 (vapor) and / or Al2Cl6 (vapor). The AlCl3 (vapor) and / or Al2Cl6 (vapor) are pumped from the container to the ion source chamber at temperatures up to approximately 150 °C and pressures of 5 to 200 Torr through a heated gas manifold and heated gas lines containing mass flow controllers and control valves. The AlCl3 (vapor) and / or Al2Cl6 (vapor) are ionized in the ion source chamber, and the enhanced aluminum ion beam current is measured. [Example]

[0095] A container containing AlCl3 (solid) is fluidly coupled to the ion source chamber of an ion implantation device. The container is heated to vaporize the AlCl3 (solid) and produce AlCl3 (vapor) and / or Al2Cl6 (vapor). The AlCl3 (vapor) and / or Al2Cl6 (vapor) are pumped from the container to the ion source chamber at a temperature of up to approximately 150°C and a pressure of 5 to 200 Torr through a heated gas manifold and a heated gas line containing a mass flow controller and control valve. A second container containing H2 is fluidly coupled to the ion source chamber. H2 is pumped from the second container and delivered to the ion source chamber. The AlCl3 (vapor) and / or Al2Cl6 (vapor) are ionized in the ion source chamber, and the enhanced aluminum ion beam current is measured. [Example]

[0096] A container containing AlCl3 (solid) is fluidly coupled to the ion source chamber of an ion implantation device. The container is heated to vaporize the AlCl3 (solid), producing AlCl3 (vapor) and / or Al2Cl6 (vapor). The AlCl3 (vapor) is pumped from the container to the ion source chamber at temperatures up to approximately 150 °C and pressures of 5 to 200 Torr through a heated gas manifold and a heated gas line containing a mass flow controller and control valve. The AlCl3 (vapor) and / or Al2Cl6 (vapor) is contacted with a solid aluminum target material (e.g., Al, AlN, Al2O3) placed in the ion source chamber. The enhanced aluminum ion beam current is measured and observed. [Example]

[0097] A container containing AlCl3 (solid) is fluidly coupled to the ion source chamber of an ion implantation device. The container is heated to vaporize the AlCl3 (solid), producing AlCl3 (vapor) and / or Al2Cl6 (vapor). The AlCl3 (vapor) is pumped from the container to the ion source chamber at a temperature of up to approximately 150°C and a pressure of 5 to 200 Torr through a heated gas manifold and a heated gas line containing a mass flow controller and control valve. A second container containing H2 is fluidly coupled to the ion source chamber. H2 is pumped from the second container and delivered to the ion source chamber. The AlCl3 (vapor) and / or Al2Cl6 (vapor) is contacted with a solid aluminum target material (e.g., Al, AlN, Al2O3) placed in the ion source chamber. The enhanced aluminum ion beam current is measured and observed. [Example]

[0098] A container containing PCl3 is fluidly coupled to the ion source chamber of an ion implantation device. The PCl3 is discharged from the container and delivered to the ion source chamber. The PCl3 is contacted with a solid aluminum target material (e.g., Al, AlN, Al2O3) placed in the ion source chamber. The enhanced aluminum ion beam current is measured and observed. [Example]

[0099] A container containing PCl3 is fluidly coupled to an ion source chamber of an ion implantation device. The PCl3 is evacuated from the container and delivered to the ion source chamber. A second container containing H2 is fluidly coupled to the ion source chamber. The H2 is evacuated from the second container and delivered to the ion source chamber. The PCl3 is contacted with a solid aluminum target material (e.g., Al, AlN, Al2O3) disposed in the ion source chamber. An enhanced aluminum ion beam current is measured and observed.

Claims

1. obtaining a first vessel containing a chlorine-containing source material; vaporizing the chlorine-containing source material to obtain a chlorine-containing gas; flowing the chlorine-containing gas from the first vessel into an ion source chamber of an ion implantation device; contacting the chlorine-containing gas with a solid aluminum target material disposed within the ion source chamber; generating aluminum ions in the ion source chamber for implantation into a substrate; A method of ion implantation comprising:

2. The chlorine-containing source material is AlCl ３ , Al ２ Cl ６ or any combination thereof.

3. 10. The method of claim 1, wherein said vaporizing comprises heating said chlorine-containing source material to a temperature in the range of 60°C to 250°C.

4. 10. The method of claim 1, wherein said flowing comprises flowing said chlorine-containing gas at a pressure in the range of 2 Torr to 750 Torr.

5. The method of claim 1 , wherein the solid aluminum target material comprises at least one of aluminum, aluminum oxide, aluminum nitride, aluminum carbide, aluminum boride, or any combination thereof.

6. The aluminum ions are Al ２ ＋ , Al ＋ , Al ２＋ , Al ３＋ or any combination thereof.

7. obtaining a second vessel containing a hydrogen-containing co-gas; flowing the hydrogen-containing co-gas from the second container into the ion source chamber of the ion implantation device; The method of claim 1 further comprising:

8. The hydrogen-containing co-gas is H ２ , P.H. ３ , AsH ３ , SiH ４ , Si ２ H ６ , B ２ H ６ , C.H. ４ , C ２ H ６ , N.H. ３ , N ２ H ４ , GeH ４ , Ge ２ H ６ or any combination thereof.

9. obtaining a first vessel containing a chlorine-containing gas; flowing the chlorine-containing gas into an ion source chamber of an ion implantation device; contacting the chlorine-containing gas with a solid aluminum target material present in the ion source chamber; generating aluminum ions in the ion source chamber for implantation into a substrate; A method of ion implantation comprising:

10. The chlorine-containing gas is ３ , PCl ５ , POCl ３ , Cl ２ , MoO ２ Cl ２ , WOCl ４ , WCl ５ , BCl ３ , HCl, SiCl ４ , GeCl ４ , AsCl ３ , SbCl ５ , GaCl ３ , AlCl ３ , Al ２ Cl ６ or any combination thereof.

11. 10. The method of claim 9, wherein the solid aluminum target material comprises at least one of aluminum, aluminum oxide, aluminum nitride, aluminum carbide, aluminum boride, or any combination thereof.

12. The aluminum ions are Al ２ ＋ , Al ＋ , Al ２＋ , Al ３＋ or any combination thereof.

13. obtaining a second vessel containing a hydrogen-containing co-gas; flowing the hydrogen-containing co-gas from the second container into the ion source chamber of the ion implantation device; 10. The method of claim 9, further comprising:

14. The hydrogen-containing co-gas is H ２ , P.H. ３ , AsH ３ , SiH ４ , Si ２ H ６ , B ２ H ６ , C.H. ４ , C ２ H ６ , N.H. ３ , N ２ H ４ , GeH ４ , Ge ２ H ６ or any combination thereof.

15. obtaining a third vessel containing a fluorine-containing co-gas; flowing the fluorine-containing co-gas from the third vessel into the ion source chamber of the ion implantation device; 10. The method of claim 9, further comprising:

16. 1. An ion implantation system comprising: an ion source chamber containing a solid aluminum source material; and a vaporizer fluidly coupled to the ion source chamber; an ion implantation device comprising: at least one of a chlorine-containing source material, a chlorine-containing gas, or any combination thereof; a first vessel fluidly connectable to the ion source chamber of the ion implantation device; Including, An ion implantation system configured to generate aluminum ions for implantation into a substrate.

17. 17. The ion implantation system of claim 16, wherein the solid aluminum source material comprises at least one of aluminum, aluminum oxide, aluminum nitride, aluminum carbide, aluminum boride, or any combination thereof.

18. The chlorine-containing source material is AlCl ３ , Al ２ Cl ６ 17. The ion implantation system of claim 16, comprising at least one of:

19. The chlorine-containing gas is ３ , PCl ５ , POCl ３ , Cl ２ , MoO ２ Cl ２ , WOCl ４ , WCl ５ , BCl ３ , HCl, SiCl ４ , GeCl ４ , AsCl ３ , SbCl ５ , GaCl ３ , AlCl ３ , Al ２ Cl ６ 17. The ion implantation system of claim 16, comprising at least one of:

20. Hydrogen-containing co-gas a second container containing fluidly connectable to the ion source chamber of the ion implantation device; 17. The ion implantation system of claim 16, further comprising a second container.

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