Smart Manufacturing Solutions for Wastewater Treatment

Abstract

The present disclosure generally relates to methods and systems used to collect waste fluids. A system controller for controlling operation of at least a portion of the system is disclosed. The controller has a CPU. The manufacturing facility includes a first treatment system, which distributes fluid therein for processing materials on components. A first drain is configured to collect the processing fluid as a waste fluid after processing the components. The manufacturing facility also includes a waste collection system fluidically coupled to the system drain. The waste collection system has two or more valves configured to couple the system drain to two or more facility drains. Each facility drain is uniquely coupled to one of the two or more valves. The CPU is configured to operate the valves between an open state and a closed state in response to fluid entering the system drain.

Description

[Technical Field]

[0001] The embodiments described herein relate generally to systems and methods used to process semiconductor substrates in electronic device manufacturing processes, and more particularly to a system for collecting wastewater and waste fluids used in the manufacture of semiconductor substrates. [Background technology]

[0002] Manufacturing facilities utilize processing systems in the manufacture of high-density integrated circuits, such as semiconductor devices. For example, a chemical mechanical planarization system is one processing system used to manufacture semiconductor devices. CMP systems planarize or polish a layer of material deposited on a substrate. A typical CMP process involves contacting a material layer of a substrate to be planarized with a polishing pad in the presence of a polishing fluid, and moving the polishing pad, the substrate, or both, thus creating relative movement between the material layer surface and the polishing pad. Material is removed across the material layer surface in contact with the polishing pad through a combination of chemical and mechanical action, at least in part, provided by the polishing fluid. Commonly used polishing fluids include abrasive particle-containing slurries, such as colloids or suspensions, reactive liquid (abrasive-free) slurries, and abrasive-free or reduced-abrasive polishing fluids used with fixed-abrasive polishing pads having abrasive particles disposed therein.

[0003] Generally, polishing fluids are highly engineered to provide the desired chemical and mechanical polishing performance characteristics and to disperse and maintain abrasive particles in a colloidal or relatively stable suspension. Not all polishing fluids used during CMP require the same, or even any, treatment when the polishing fluid is used and collected as waste. Some polishing fluids contain metals and other materials such that the waste polishing fluid requires treatment after their use, while others can be recycled, reused, or disposed of without treatment. When the fluids are collected after polishing, the collected fluids are treated together to remove most of the hazardous waste. However, treating the waste fluids in this manner is costly. Waste fluid problems are not unique to CMP systems in manufacturing facilities.

[0004] Therefore, there is a need in the art for improved handling of waste fluids in semiconductor device manufacturing and methods for operating the same. Summary of the Invention

[0005] The present disclosure generally relates to methods and systems used to collect waste fluids. A system controller for controlling operation of at least a portion of a manufacturing facility is disclosed. The controller has a CPU. The manufacturing facility includes a first treatment system, which injects a fluid to treat a material on a component. A first drain is configured to collect the treatment fluid as a waste fluid after treating the component. The manufacturing facility also includes a waste collection system fluidically coupled to the system drain. The waste collection system has two or more valves configured to couple the system drain to two or more facility drains. Each facility drain is uniquely coupled to one of the two or more valves. The CPU is configured to operate the valves between an open state and a closed state in response to fluid entering the system drain.

[0006] In another embodiment, a method for collecting waste fluids is disclosed. The method includes distributing process fluids to a processing system of a manufacturing facility according to a process recipe for processing a material on a part. The process fluids are removed from the processing system as waste fluids. The waste fluids are collected using a waste collection system that couples a valve box to two or more facility drains. The fluid waste is characterized. In response to determining the characterization of the fluid waste, the waste fluid is directed to a first valve in the valve box coupled to a first drain.

[0007] So that the above-recited features of the present disclosure may be understood in detail, a more particular description of the present disclosure briefly summarized above can be made by reference to embodiments, some of which are illustrated in the accompanying drawings. It should be noted, however, that since the present disclosure may admit of other equally effective embodiments, the accompanying drawings illustrate only typical embodiments of the present disclosure and therefore should not be considered limiting of its scope. [Brief explanation of the drawings]

[0008] [Figure 1] 1 is a schematic side view of a processing system configured with multiple drains for selectively removing spent fluids, according to an embodiment. FIG. [Figure 2] FIG. 1 is a schematic diagram of a waste collection system that may be used with a drain of a treatment system, according to an embodiment. [Figure 3] FIG. 2 is a schematic diagram of a controller unit configured to control a treatment system and a waste collection system, according to an embodiment. [Figure 4] 1 is a flow chart describing a method for collecting waste fluids from a portion of a manufacturing facility. DETAILED DESCRIPTION OF THE INVENTION

[0009] For ease of understanding, where possible, like reference numerals have been used to designate like elements that are common to the figures. It is contemplated that elements and features of each embodiment may be beneficially incorporated in other embodiments without further recitation.

[0010] SUMMARY OF THE INVENTION Embodiments of the present disclosure generally provide a system for controlling the collection of waste fluids from a processing system that processes electronic devices.

[0011] For example, the processing system may be a chemical mechanical polishing (CMP) system. CMP dispenses a polishing fluid onto the surface of a polishing pad mounted on a rotating platen. A substrate is urged toward the polishing pad in the presence of the polishing fluid. The dispensed polishing fluid is distributed radially outward from the dispense location by centrifugal force exerted on the polishing fluid from the rotation of the platen. When the polishing fluid reaches the circumferential edge of the polishing pad, the polishing fluid typically flows into a drainage basin that surrounds the platen and extends to an area disposed below the platen. This facilitates the capture of all fluids and other processing byproducts during the CMP process and other associated processing activities, such as pad rinsing and pad conditioning activities, as well as associated polishing byproducts.

[0012] Provided herein is a cost-effective solution for enabling waste drain switching based on the waste characteristics of used polishing fluids, even when the waste fluids contain one or more of the following: copper, ozone, suspended solids, fluoride, and toxins (such as GaAs), among others. Drain switching enables drain material protection and cost-effective control of sub-fab components and mitigation (water flow, neutralization) of waste polishing fluids. Data management of the switching system enables estimation of waste composition and balancing of materials used by the treatment system and waste collection system. Waste drains are separated based on waste fluid characteristics. For example, waste drains can be separated into corrosive and acidic drains with arsenic (As) and corrosive and acidic drains without As, respectively, to enable compliant treatment. Drains can be further separated based on other metals or other contaminants requiring specific treatment / mitigation. Therefore, cost reduction for waste polishing fluid waste disposal enables compliance reporting for specific wastes and reduces overall system operating costs. It should be appreciated that any processing system with wet applications can benefit from the following disclosure. For example, resist cleaning, other cleaning, and wet etching, to name a few, all require waste fluid capture and disposal, recycling, treatment, and reporting. Thus, the disclosed system can be deployed beyond etching, CVD, PVD, EPI cleaning, CMP, and plating for data collection and condition monitoring.

[0013] 1 is a schematic side view of a processing system configured with multiple drains for selectively removing spent fluids. The processing system is part of a manufacturing facility having multiple processing systems that can perform processes for fabricating various parts from various materials. The processing system can be any one of the various processing systems described above, although the description will be limited to CMP system 100 for brevity.

[0014] The CMP 100 includes a cylindrical platen 102, a polishing pad 104 secured to the platen, a substrate carrier 106, and a catch basin 122. The polishing pad 104 may be secured to the platen 102 using a pressure-sensitive adhesive or other releasable technique. The substrate carrier 106 is disposed above the platen 102 such that a substrate disposed in the carrier 106 faces the polishing pad 104. The catch basin 122 is used to collect and recycle polishing fluids from the polishing process performed for the CMP 100. During chemical mechanical processing, the substrate carrier 106 rotates about a carrier axis 110 while simultaneously moving a material surface of a substrate 108 disposed in the substrate carrier 106 toward the polishing pad 104. The platen 102 rotates about the platen axis 112 while the rotating substrate carrier 106 sweeps back and forth from the inner diameter to the outer diameter of the platen 102, in part to reduce uneven wear of the polishing pad 104. In some embodiments, the polishing system 100 further includes a pad conditioner assembly (not shown) that is used to wear down, rejuvenate, and remove polishing by-products or other debris from the surface of the polishing pad 104.

[0015] Polishing fluid, polishing fluid additives, cleaning fluid, and / or deionized water (DI water) are delivered from a polishing fluid source 126 to a fluid delivery arm 114 positioned above the platen 102 and dispensed onto the polishing pad 104 using a nozzle 116 positioned in or on the fluid delivery arm 114. The fluid delivery arm 114 is coupled to an actuator 118, which, during use, positions the fluid delivery arm 114 above the platen 102 by swinging the fluid delivery arm 114 above the platen 102. The actuator 118 is disposed on a base plate 120 that surrounds the platen 102. A system controller 300, described further below, controls the actuator 118 and the amount of polishing fluid dispensed by the fluid delivery arm 114 onto the polishing pad 104.

[0016] The fluid dispensing arm 114 may dispense an acidic polishing fluid, a corrosive polishing fluid, a metal-containing fluid, deionized water, or one or more other fluids for polishing the substrate 108. Additionally, as the substrate 108 disposed on the platen 102 is polished, material from the surface of the substrate 108 in contact with the pad 104 may become suspended and / or carried away by the polishing and / or cleaning fluid. The material being removed from the substrate 108 may include metals or other materials that become entrained in waste fluids, requiring environmental considerations for reporting and / or disposal. For example, the waste fluids may require abatement, disposal as hazardous materials, or recycling and reuse. The waste collection system 200 described below is uniquely configured to handle a variety of different materials present in the waste polishing fluid. The waste polishing fluid is also referred to herein as used polishing fluid.

[0017] The collection basin 122 collects used polishing fluid spun radially outward from the rotating polishing pad 104 by centrifugal force. The collection basin 122 surrounds the platen 102, which allows substantially all of the used polishing fluid flowing radially outward from the surface of the polishing pad 104 to be directed into the collection basin 122. The used polishing fluid is removed from the collection basin 122 by a system drain 124. The system drain 124 may use gravity or a suction pump to remove the used polishing fluid from the collection basin 122. The system drain 124 is connected to a waste collection system, which is described in further detail below with respect to FIG. 2.

[0018] 2 is a schematic diagram of a waste collection system 200 connected to a system drain 124 of a CMP system 280, according to an embodiment. The CMP system 280 may have one or more CMPs 100. For example, the CMP system 280 may include a first CMP table 210, a second CMP table 220, and a third CMP table 230. Each CMP table 210, 220, 230 may be configured as a single CMP 100 as described above, or as another suitable system.

[0019] The waste collection system 200 may alternatively be used to manage waste flow from other types of systems. The waste collection system 200 is gravity fed from the system drain 124. Alternatively, the waste collection system 200 may include one or more vacuum devices configured to draw waste fluid from the system drain 124 and into the waste collection system 200.

[0020] The waste collection system 200 may be coupled to one or more CMP systems 280 or other similar systems. For example, the waste collection system 200 may be coupled to a first CMP table 210, a second CMP table 220, and a third CMP table 230. The waste collection system 200 may further include a post-CMP substrate cleaning apparatus 290. Although not shown, the cleaning apparatus 290 includes a rinse tank and / or scrubber for removing residual polishing fluid and / or materials from the substrate 108 after the CMP process is performed on the substrate 108 on one or more of the CMP tables 210, 220, and 230. Each table 210, 220, and 230 has a respective system drain 124. In FIG. 2 , the system drain 124 of the first CMP table 210 is coupled to drain line 212, the system drain 124 of the second CMP table 220 is coupled to drain line 222, and the system drain 124 of the third CMP table 230 is coupled to drain line 232. Additionally, the system drain 124 of the rinse tank and / or the scrubber of the cleaning device 290 is coupled to a drain line 292 .

[0021] The waste collection system 200 has one or more valve boxes 290. The drain lines 212, 222, 232, 292 of each CMP table 210, 220, 230 and cleaning apparatus 290 may have their own valve box 290. Alternatively, two or more of the drain lines 212, 222, 232, 292 may be coupled to the same valve box 290. The valve box 290 includes multiple valves for diverting incoming waste fluid from the drain lines 212, 222, 232, 292 to selected ones of multiple drains 250. The multiple drains 250 include fluid drains 215, 225, 235, 245. For example, a first valve 201 may direct waste fluid entering the valve box 290 from one of the drain lines 212, 222, 232, 292 to the first fluid drain 215. A second valve 202 can direct waste fluid entering the valve box 290 from one of the drain lines 212, 222, 232, 292 to a second fluid drain 225. A third valve 203 can direct waste fluid entering the valve box 290 from one of the drain lines 212, 222, 232, 292 to a third fluid drain 235. Additionally, a fourth valve 204 can direct waste fluid entering the valve box 290 from one of the drain lines 212, 222, 232, 292 to a fourth fluid drain 245. Thus, all of the CMP tables 210, 220, 230 and the cleaning apparatus 290 can be selectively connected to all four different fluid drains 215, 225, 235, 245 by the valve box 290.

[0022] Each fluid drain 215, 225, 235, 245 is configured to handle a specific waste stream. For example, fluid drain 1 (FD1) 215 may be designated to handle acidic waste that is free of metals, such as arsenic (As). Fluid drain 2 (FD2) 225 may be designated to handle corrosive waste that is free of metals, such as arsenic (As). Fluid drain 3 (FD3) 235 may be designated to handle acidic waste that has metals, such as arsenic (As). Fluid drain 4 (FD4) 245 may be designated to handle corrosive waste that has metals, such as arsenic (As). In this manner, the waste stream into each fluid drain 215, 225, 235, 245 may be characterized, mitigated, and / or disposed of depending on the specific waste. Additionally, each fluid drain 215, 225, 235, 245 may be metered for reporting or other purposes. Thus, during processing, similar waste fluids from all tables 210 , 220 , 230 and washer 290 can be collected in a common and suitable one of the plurality of drains 250 .

[0023] Referring to FIG. 3 , a schematic diagram of a system controller 300 configured to control the waste collection system 200 is shown. The system controller 300 may control or be in communication with a portion of a manufacturing facility. The system controller 300 communicates with the polishing system 100 and the waste collection system 200. The system controller 300 includes a programmable central processing unit (CPU), such as a CPU 302, operable with a memory 304 (e.g., non-volatile memory) and support circuits 306. The support circuits 306 are conventionally coupled to the CPU 302 and include cache, clock circuits, input / output subsystems, power supplies, etc., in combination with the various components of the polishing system 100. The CPU 302 may be any type of general-purpose computer processor used in industrial settings, such as a programmable logic controller (PLC), for communicating with the various components and sub-processors of the polishing system 100. The memory 304 coupled to the CPU 302 is non-transitory and is generally one or more of readily available memory such as random access memory (RAM), read-only memory (ROM), a floppy disk drive, a hard disk, or any other form of local or remote digital storage.

[0024] The memory 304 is in the form of a computer-readable storage medium (e.g., non-volatile memory) that contains instructions that, when executed by the CPU 302, facilitate operation of the polishing system 100. The instructions in the memory 304 are in the form of a program product, such as a program that implements the methods of the present disclosure. The CPU 302 is further configured to include sensors and machine learning capabilities. The sensors of the CPU 302 may be configured to evaluate characteristics of the polishing fluid waste, such as pH level, oxygen level, and nitric acid level, among others. The machine learning capabilities can optimize drain 250 switching based on the waste characteristics and the process recipe.

[0025] The memory 304 is configured to store a plurality of instructions for performing operations on the polishing system 100 and the waste collection system 200. For example, the memory 304 may hold instructions for a first polishing recipe for providing a polishing fluid to remove a layer of material on a substrate. The memory 304 may hold instructions specifying the material of the substrate and the fluids used during processing. The memory 304 may hold information about the flow of first and second polishing fluids, including when to change from the first polishing fluid to the second polishing fluid or vice versa. The memory may hold instructions for characterizing fluid waste and controlling the waste collection system 200. Additionally, the memory 304 may hold instructions for how to handle waste fluid collection in the event of a power or meter connectivity failure.

[0026] The program code may conform to any one of a number of different programming languages. In one example, the present disclosure may be implemented as a program product stored on a computer-readable storage medium for use with a computer system. The program(s) in the program product define functions of the embodiments (including the methods described herein).

[0027] Exemplary computer-readable storage media include, but are not limited to, (i) non-writable storage media on which information is permanently stored (e.g., a read-only memory device in a computer, such as a CD-ROM disk readable by a CD-ROM drive, a flash memory, a ROM chip, or any type of solid-state non-volatile semiconductor memory), and (ii) writable storage media on which changeable information is stored (e.g., a floppy disk in a diskette drive or hard disk drive, or any type of solid-state random access semiconductor memory). Such computer-readable storage media, when carrying computer-readable instructions that direct the functions of the methods described herein, are embodiments of the present disclosure. In some embodiments, the methods described herein, or portions thereof, are implemented by one or more application-specific integrated circuits (ASICs), field-programmable gate arrays (FPGAs), or other types of hardware implementations. In some other embodiments, the polishing pad manufacturing methods described herein are implemented by a combination of software routines, ASIC(s), FPGAs, and / or other types of hardware implementations.

[0028] The controller 300 may implement the selection of the appropriate one of the multiple drains 250 for a particular waste fluid. The controller 300 may monitor the tables 210, 220, 230 and cleaning apparatus 290 for the particular fluid being used and the material being polished / cleaned. For example, the controller 300 may monitor the polishing recipe executed by the CMP 100 to properly connect the appropriate fluid drains 215, 225, 235, 245 to each table 210, 220, 230 and cleaning apparatus 290. It should be appreciated that each table 210, 220, 230 and cleaning apparatus 290 is connected to one of the fluid drains 215, 225, 235, 245 corresponding to the waste fluid, and thus two or more tables 210, 220, 230 and cleaning apparatus 290 may be coupled to the same drain 250. In operation, the controller 300 writes instructions for polishing substrates on the CMP 100 and collecting fluid waste using the waste collection system 200.

[0029] Referring to FIG. 4, FIG. 4 is a flow chart illustrating a method for collecting waste fluids from the CMP 100 in the waste collection system 200. A substrate is introduced into the CMP 100 for polishing. The substrate is placed on a polishing pad of the CMP system. The substrate may have an associated recipe stored in the controller. The recipe provides instructions for removing all or a portion of a material layer of the substrate by the CMP system. The recipe may be specific to a substrate, a group of substrates, or an operation. In operation 410, the controller monitors the processing fluids dispensed into the processing system of the fabrication facility according to the processing recipe for processing materials on the component. For example, a first polishing fluid is dispensed onto the surface of the polishing pad. The controller directs a first polishing fluid of one or more polishing or cleaning fluids to be introduced into the processing system through the fluid dispense arm to polish and / or clean the substrate. The polishing fluid may be acidic or corrosive. The polishing fluid may further include a metalloid, such as arsenic, or other material useful for removing material from the substrate during polishing.

[0030] In operation 420, the controller monitors processing fluids from the processing system that are removed as waste fluids. For example, during polishing, a substrate moves toward the surface of a polishing pad while a platen with a polishing pad disposed thereon is rotated. The first polishing fluid aids in the removal of material from the surface of the substrate. The used polishing fluid may contain particles that were removed from the substrate during polishing. The used, or waste, polishing fluid carries impurities that were removed from the substrate, such as metals such as cobalt, molybdenum, and titanium, or silicon-containing materials, among other impurities. The waste polishing fluid with impurities is removed from the CMP through a drain.

[0031] In operation 430, the controller directs the collection of waste fluid using a waste collection system. The waste collection system includes a valve box coupled to two or more facility drains. The controller is configured to operate each valve in the valve box between an open state and a closed state. The used polishing fluid is removed from the polishing system through a processing system drain coupled to the valve box. The valve box has a first valve of a plurality of valves, each valve uniquely coupled to a separate facility drain.

[0032] In operation 440, characteristics of fluid waste removed from the substrate processing system are determined, where the waste fluid is collected via a waste collection system coupled to multiple facility drains. The controller may determine the characteristics of the waste fluid based on the polishing fluid and materials removed from the substrate. The characteristics may be determined by extracting information from the polishing recipe for the substrate. Alternatively, the used polishing fluid may be analyzed using sensors to detect the pH and / or other chemical properties of the used polishing fluid.

[0033] For example, the controller may monitor slurry type. Slurries may be assigned a numeric code, such as 1 for acid metal, 2 for base metal, 3 for acid nonmetal, and 4 for base nonmetal. Slurries may also be assigned a 0 for chemistry not specifically categorized, such as deionized water. The flow for each of the slurry materials is monitored along with the status of the cleaning tool / CMP. For example, the CMP may be processing, paused, stopped, in a faulty state, or idle.

[0034] Additionally, the slurry waste fluid may contain particles that have been removed from the substrate, such as copper, ozone, solids, fluorides, poisons (GaAs), etc. The polishing operations for removal of material layers are provided to the CMP / cleaning tool in a recipe. The controller can then determine the characteristics of the slurry waste that will be in the CMP drain by knowing the slurry that was used and the material that was removed from the substrate.

[0035] In operation 450, the waste fluid is directed by the controller to a first valve in a valve box coupled to a first facility drain in response to determining a characteristic of the fluid waste. The controller may operate one or more valves in the valve box to open the first valve while closing the remaining valves. The spent waste fluid is directed through the first valve to a first facility drain of the plurality of facility drains based on the characteristic of the waste fluid. For example, a waste fluid characterized as a corrosive metal will be directed to a facility drain suitable for collecting corrosive metal waste. Similarly, a waste fluid characterized as an acidic metal will be directed to a facility drain suitable for collecting acidic metal waste.

[0036] The facility drains are each configured to accept a particular waste type. A first facility drain is configured to accept all waste fluids of a particular characteristic, e.g., corrosive waste with metals. In this way, only similar waste materials are collected in the same facility drain. For example, the controller may operate valves to particular drains based on chemicals, pH, and particles, as shown in Table 1 herein. TIFF2025529066000002.tif99170

[0037] Response and delay times can be provided in switching the valves to different facility drains to prevent waste fluids of different or less hazardous characteristics from going to the wrong drain. For example, the controller can operate the valves to direct acidic waste fluids having metalloids, such as arsenic, to the appropriate drain sooner than the waste fluid is expected to reach the valve box, and similarly, to keep the valves configured to direct the fluid to the facility drain for a short period of time after the fluid has stopped dispensing on the CMP to ensure all waste is collected.

[0038] The controller may include a default process that specifies a default facility drain. For example, facility drain FD4, configured as an acidic metal-containing drain, may be used during a threatened loss of a tool. In this way, unknown properties of waste fluids are handled with the utmost care and prevented from being inadvertently sent for recycling or reused in a harmful or possibly hazardous manner.

[0039] The controller may further prepare reports on the amount of waste entering the first facility drain, the amount of waste entering the second facility drain, the amount of waste entering the third facility, and the amount of waste entering the fourth facility drain, which may be provided for environmental compliance, waste reduction analysis, or other purposes.

[0040] Waste characteristics have become extremely sophisticated for manufacturing facilities. Advantageously, the apparatus and method described above provide a cost-effective solution for waste management by enabling waste drain switching based on several characteristics of the waste and even providing a fail-safe solution. This enables drain material protection, as well as cost-effective control, mitigation (water flow, neutralization), and data management of sub-fab components, waste composition estimation, and material balancing, all of which enable cost reduction in waste disposal. Furthermore, proper waste characterization provides knowledge for safe waste handling by personnel. Material balance can be determined by tool and chemical facility-wide. Estimation of wastewater composition includes comparison with sensors to detect drift and other variations. This further enables detection of abnormal consumption, for example, due to faulty valves or leaks.

[0041] While the forgoing is directed to embodiments of the present disclosure, other and further embodiments of the present disclosure may be devised without departing from the basic scope thereof, which scope is determined by the following claims.

Claims

1. A system controller configured to control operation of at least a portion of a manufacturing facility, the system controller comprising: a CPU configured to control the operation of at least a portion of the manufacturing facility; wherein the CPU: First Processing System and wherein the first processing system is in communication with a basin sized to capture processing fluid dispensed within the processing system for processing material on a part; a first system drain disposed in the basin, the first system drain configured to collect the processing fluid as a waste fluid after processing the part; Equipped with The CPU is configured to control a waste collection system fluidly coupled to the first system drain, the waste collection system comprising: a valve box having two or more valves, the valve box configured to be coupled to the first system drain and two or more facility drains, each facility drain uniquely coupled to one of the two or more valves; Equipped with a system controller, wherein the CPU is configured to operate the two or more valves between an open state and a closed state in response to a characteristic of the waste fluid entering the first system drain.

2. 10. The system controller of claim 1, wherein the waste collection system has four facility drains coupled to respective valves, each respective valve operable by the controller between an open state and a closed state.

3. the waste collection system comprising: a first facility drain configured to receive waste fluid from the first system drain characterized by the controller as acidic and containing metals; a second fixture drain configured to receive fluid from the drain characterized by the controller as corrosive and containing metals; a third fixture drain configured to receive fluid from the drain characterized by the controller as a metal-free acid; a fourth fixture drain configured to receive fluid from the drain characterized by the controller as being metal-free and corrosive; and The system controller of claim 2 further comprising:

4. The CPU, operating a first valve coupling a first drain to the first fixture drain between an open state and a closed state; operating a second valve coupling the first drain to the second fixture drain between an open state and a closed state; operating a third valve coupling the first drain to the third fixture drain between an open state and a closed state; operating a fourth valve coupling the first drain to the fourth fixture drain between an open state and a closed state; 4. The system controller of claim 3 configured to:

5. 4. The system controller of claim 3, wherein the CPU is further in communication with a second treatment system configured similarly to the first treatment system and having a second system drain fluidly coupled to the waste collection system.

6. 4. The system controller of claim 3, wherein the CPU is configured to characterize the waste fluid entering the first system drain, and if the waste fluid is an acid containing a metal, the CPU operates to direct the waste fluid only into the first facility drain.

7. 4. The system controller of claim 3, wherein the CPU is configured to characterize the fluid entering the first system drain, and if the fluid cannot be characterized, the CPU operates to direct the waste fluid only into the first facility drain.

8. 1. A method for collecting waste streams from a portion of a manufacturing facility, the method comprising: determining a characteristic of the waste fluid removed from a substrate processing system, the waste fluid being collected via a waste collection system coupled to a plurality of facility drains; in response to determining the characteristic of the fluid waste, causing a controller to direct the waste fluid to a first drain of the plurality of facility drains suitable for handling the waste fluid; A method comprising:

9. The waste collection system a first facility drain of the plurality of facility drains configured to receive a waste fluid characterized as acidic and containing metals; a second facility drain of the plurality of facility drains configured to receive a waste fluid characterized as corrosive and containing metals; a third facility drain of the plurality of facility drains configured for a waste stream characterized as a metal-free acid; a fourth facility drain of the plurality of facility drains configured to receive a waste fluid characterized as being metal-free and corrosive; The method of claim 8 further comprising:

10. 10. The method of claim 9, wherein fluids used in a recipe running on the substrate processing system and materials from the substrate that are carried away in the waste fluid after processing are used by the controller to determine the characteristics of the waste fluid.

11. The method of claim 10 , wherein the uncharacterizable waste fluid is placed into the first facility drain.

12. directing the waste fluid to the first drain in a fail-safe condition, the controller operating to open a valve in a configuration directing the waste fluid to the first facility drain; The method of claim 10 further comprising:

13. reporting an amount of fluid waste entering the first facility drain, an amount of fluid waste entering the second facility drain, an amount of fluid waste entering the third facility drain, and an amount of fluid waste entering the fourth facility drain.

10. The method of claim 9, further comprising:

14. Delaying switching to one or more facility drains to prevent waste fluids of different or less hazardous characteristics from going down the wrong drain 10. The method of claim 9, further comprising:

15. 1. A non-transitory computer-readable storage medium comprising a program product configured, when executed, to perform a method for collecting waste fluids from a manufacturing facility, the method comprising: determining a characteristic of the waste fluid removed from a substrate processing system, the waste fluid being collected via a waste collection system coupled to a plurality of facility drains; responsive to determining the characteristic of the fluid waste, directing the waste fluid to a first drain of the plurality of facility drains suitable for handling the waste fluid; 1. A non-transitory computer-readable storage medium comprising:

16. The waste collection system a first facility drain of the plurality of facility drains configured to receive a waste fluid characterized as acidic and containing metals; a second facility drain of the plurality of facility drains configured to receive a waste fluid characterized as corrosive and containing metals; a third facility drain of the plurality of facility drains configured for a waste stream characterized as a metal-free acid; a fourth facility drain of the plurality of facility drains configured to receive a waste fluid characterized as being metal-free and corrosive; 20. The non-transitory computer-readable storage medium of claim 15, further comprising:

17. 20. The non-transitory computer-readable storage medium of claim 16, wherein the characteristics of the waste fluid are determined by fluids used in a recipe executed on a substrate processing system and materials from the substrate that are carried away in the waste fluid after processing.

18. 20. The non-transitory computer-readable storage medium of claim 17, wherein the waste fluid that cannot be characterized is placed into the first facility drain.

19. directing the waste fluid to the first drain in a fail-safe condition, the controller operative to open a valve in a configuration directing the waste fluid to the first facility drain; 20. The non-transitory computer-readable storage medium of claim 17, further comprising:

20. reporting an amount of fluid waste entering the first facility drain, an amount of fluid waste entering the second facility drain, an amount of fluid waste entering the third facility drain, and an amount of fluid waste entering the fourth facility drain.

20. The non-transitory computer-readable storage medium of claim 16, further comprising:

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