Nanocrystalline complexes, methods for their preparation, and uses thereof - Patents.com

Abstract

A nanocrystal complex is provided. The nanocrystal complex comprises a nanocrystal particle and a ligand coordinated to the surface of the nanocrystal particle, the ligand comprising a photosensitive ligand having the structure shown in Formula (I) and / or Formula (II). X is a coordinating group, Y and Y' are bonding groups, one of A and B is -C=O- and the other is a group containing a carbon-carbon double bond, R, R', and R" are independently a hydrogen atom, a halogen atom, a nitro group, a hydroxyl group, a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkoxy group, a substituted or unsubstituted alkylcarbonyl group, a substituted or unsubstituted cycloalkyl group, a substituted or unsubstituted aryl group, or a substituted or unsubstituted aryloxy group, and n is 1, 2, or 3. The nanocrystal complex has high photocrosslinking activity and thermal stability and is used to prepare patterned films.

Description

[Technical Field]

[0001] This application claims priority to Chinese Patent Application No. 202211008516.1, entitled "Nanocrystal Composite, Its Manufacturing Method, and Its Use," filed with the State Intellectual Property Office of the People's Republic of China on August 22, 2022, the entire text of which is incorporated herein by reference.

[0002] TECHNICAL FIELD Embodiments of the present application relate to the field of nanocrystalline film preparation techniques, and in particular to nanocrystalline complexes, methods for their preparation, and uses thereof. [Background technology]

[0003] Augmented reality (AR) and virtual reality (VR) glasses require microdisplay optical engines, which in the future will have ultra-high resolution (≥3000 ppi) and must meet all the requirements of ultra-high resolution, low power consumption, highly collimated light emission, and compact size. Quantum dots are a new type of display material, characterized by high luminous efficiency and narrow peak width, which can realize low power consumption, highly collimated light emission, and compact size. Summary of the Invention [Problem to be solved by the invention]

[0004] However, to fabricate ultra-high-resolution display devices using quantum dot materials, it is necessary to finely pattern the quantum dot (QD) layer of a quantum dot light-emitting device (QLED) to obtain a pixel array (as shown in Figure 1). Currently, industrial methods for finely patterning quantum dot layers mainly include (1) the transfer printing method (see Figure 2). The transfer printing method uses a patterned template to attach a quantum dot layer formed on substrate A according to a target pattern, and then transfers the quantum dot layer to substrate B to obtain a patterned quantum dot layer. This method has limitations in processing size and significant challenges in processing yield. There is also (2) the photoresist etching method (see Figure 3). In the photoresist etching method, the quantum dot layer is coated with a layer of photoresist, followed by exposure, development, and etching to obtain a patterned quantum dot layer. This method involves many processing steps, and the developer and etchant affect the quantum dot layer and functional layers (such as the hole transport layer, hole injection layer, or electron transport layer). To more easily obtain high-quality patterned quantum dot layers, industrial efforts have begun to directly synthesize patternable quantum dot materials (see Figure 4). By using patternable quantum dot materials, the quantum dot layer can be directly subjected to two steps: solvent exposure and development, resulting in a patterned quantum dot layer. However, some of the previously developed patternable quantum dot materials have low photoactivity, requiring long exposure times and high exposure doses. Some of them have excessively high thermal crosslinking activity, which can lead to crosslinking even upon heating. In this case, the quantum dot layer is prone to partial crosslinking during the annealing step before exposure, resulting in the quantum dot layer in the unexposed areas not being completely developed or dissolved, resulting in residual quantum dot layer in the unexposed areas. [Means for solving the problem]

[0005] In view of this, the present invention provides a nanocrystal complex having high photocrosslinking activity and high thermal stability (i.e., low thermal crosslinking activity). The nanocrystal complex can be used to prepare a patterned film.

[0006] Specifically, in a first aspect of the present embodiment, a nanocrystal complex is provided, which comprises a nanocrystal particle and a ligand coordinated to the surface of the nanocrystal particle, the ligand comprising a photosensitive ligand having a structure represented by formula (I) and / or formula (II): [ka] (Formula I) [ka] (Formula II) In (Formula I), X is a coordinating group coordinated to the nanocrystalline particle; Y is a bonding group; one of A and B is —C═O— and the other is a group containing a carbon-carbon double bond; R and R′ are independently one of a hydrogen atom, a halogen atom, a nitrogen group, a hydroxy group, a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkoxy group, a substituted or unsubstituted alkylcarbonyl group, a substituted or unsubstituted cycloalkyl group, a substituted or unsubstituted aryl group, and a substituted or unsubstituted aryloxy group; In (Formula II), X is a coordinating group coordinated to the nanocrystalline particle, Y and Y' are linking groups, and R, R', and R" are independently one of a hydrogen atom, a halogen atom, a nitro group, a hydroxy group, a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkoxy group, a substituted or unsubstituted alkylcarbonyl group, a substituted or unsubstituted cycloalkyl group, a substituted or unsubstituted aryl group, and a substituted or unsubstituted aryloxy group; n is 1, 2, or 3.

[0007] In an embodiment of the present application, a nanocrystal composite with high photosensitivity and high thermal stability is obtained by coordinating a photosensitive ligand having a structure represented by formula (I) and / or formula (II), which has high photocrosslinking activity and low thermal crosslinking activity, to the surface of a nanocrystal particle. The nanocrystal composite has a patterning function. The nanocrystal composite can be used to prepare a patterned nanocrystal film, and patterning can be performed directly through exposure and solvent development. In the patterning process, the nanocrystal composite can undergo photocrosslinking with a small amount of exposure and a short exposure time. Specifically, crosslinking between nanocrystal complexes is achieved using the photosensitive ligand, and no additional photoinitiator is required in the photocrosslinking process. Furthermore, when the nanocrystal complex is subjected to heating and annealing processes, thermal crosslinking does not occur, which avoids the problem of incomplete dissolution in unexposed areas during the development process, improving the reliability of the patterning process and facilitating the preparation of fine patterns.

[0008] In some embodiments of the present application, ligands 102 on the surface of nanocrystalline particle 101 may include one or more photosensitive ligands having the structure shown in formula (I). In some embodiments of the present application, ligands 102 on the surface of nanocrystalline particle 101 may include one or more photosensitive ligands having the structure shown in formula (II). In some embodiments of the present application, ligands 102 on the surface of nanocrystalline particle 101 may include one or more photosensitive ligands having the structure shown in formula (I) and / or one or more photosensitive ligands having the structure shown in formula (II). In some embodiments of the present application, ligands 102 on the surface of nanocrystalline particle 101 may further include ligands having different structures or different functions.

[0009] In an embodiment of the present application, the coordinating group comprises any one of a carboxy group, an amino group, a phosphate group, a phospholipid group, and a mercapto group.

[0010] In embodiments of the present application, the linking group Y comprises one or more of a substituted or unsubstituted alkylene group, a substituted or unsubstituted arylene group, a substituted or unsubstituted arylenealkyl group, a substituted or unsubstituted alkylenearyl group, a substituted or unsubstituted alkyleneoxy group, a substituted or unsubstituted aryleneoxy group, a substituted or unsubstituted alkylenearyloxy group, a substituted or unsubstituted arylenealkoxy group, a carbonyl-containing group, an ester-containing group and / or an ether oxygen bond-containing group, and an imino-containing group.

[0011] The carbonyl-containing group includes any one of -C(=O)- and -R1-C(=O)-, and the ester-containing group and / or ether-oxygen bond-containing group includes any one of -R2-C(=O)-O-, [ka] [ka] [ka] [ka] [ka] wherein the imino-containing group is -R-CH-NH-, [ka] [ka] and -R3-C(=O)-NH-, wherein R1, R2, and R3 are substituted or unsubstituted alkylene groups.

[0012] In the present embodiment, the number of carbon atoms in the linking group Y is from 1 to 30. A suitable number of carbon atoms in the linking group Y can achieve a good balance between the dispersion of the quantum dots and the conductivity of the quantum dot layer.

[0013] In an embodiment of the present application, the linking group Y' comprises one or more of an oxygen atom, a sulfur atom, a substituted or unsubstituted alkylene group, a substituted or unsubstituted alkyleneoxy group, an ester-containing group, and an amide bond-containing group. The ester-containing group may be -R1-C(=O)-O-, and the amide bond-containing group may be -R3-C(=O)-NH-, where R1 and R3 are substituted or unsubstituted alkylene groups.

[0014] In an embodiment of the present application, the linking group Y' has 0 to 30 carbon atoms.

[0015] In an embodiment of the present application, in R, R', and R", the substituted or unsubstituted alkyl group is a substituted or unsubstituted C1 to C20 alkyl group, the substituted or unsubstituted alkoxy group is a substituted or unsubstituted C1 to C20 alkoxy group, the substituted or unsubstituted alkylcarbonyl group is a substituted or unsubstituted C1 to C20 alkylcarbonyl group, the substituted or unsubstituted cycloalkyl group is a substituted or unsubstituted C3 to C20 cycloalkyl group, the substituted or unsubstituted aryl group is a substituted or unsubstituted C6 to C20 aryl group, and the substituted or unsubstituted aryloxy group is a substituted or unsubstituted C6 to C20 aryloxy group.

[0016] In an embodiment of the present application, the photosensitive ligand having the structure represented by formula (I) includes any one of the compounds represented by formulas (I-1) to (I-14): [ka] Formula (I-1)

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[0017] In an embodiment of the present application, the photosensitive ligand having the structure represented by formula (II) includes any one of the compounds represented by formulas (II-1) to (II-12): [ka] Formula (II-1) [ka] Formula (II-2) [ka] Formula (II-3) [ka] Formula (II-4) [ka] Formula (II-5) [ka] Formula (II-6) [ka] Formula (II-7) [ka] Formula (II-8) [ka] Formula (II-9) [ka] Formula (II-10) [ka] Formula (II-11) [ka] Formula (II-12) In the formulas (II-1) to (II-12), m is an integer of 0 or more.

[0018] In embodiments of the present application, the nanocrystalline particles comprise one or more of a II-VI compound, a IV-VI compound, a III-V compound, a III-VI compound, a VIB-VIA compound, a VIII-VI compound, a I-VI compound, a Group I element material, a Group IV element material, a Group I-IV-VII compound, and a perovskite compound.

[0019] In an embodiment of the present application, the nanocrystalline particles have a particle size of 5 nm to 20 nm. A suitable particle size of the nanocrystalline particles provides good luminescence properties.

[0020] In an embodiment of the present application, the total mass of the ligands on the surface of the nanocrystalline particle is 1% to 30% of the mass of the nanocrystalline particle. A suitable coordination amount of the photosensitive ligands promotes high photosensitivity and high thermal stability of the nanocrystalline complex, which helps to make good use of the properties of the nanocrystalline particle.

[0021] In a second aspect of the present embodiment, there is provided a method for preparing a first nanocrystal complex, the method comprising: Dispersing nanocrystalline particles having surfaces coordinated with first ligands in a solvent; adding the photolabile ligand having the structure shown in formula (I) and / or formula (II); agitating the reaction to obtain the ligand-exchanged nanocrystalline particles, i.e., the nanocrystalline complex; A method is provided, comprising:

[0022] In an embodiment of the present application, the first ligand comprises a saturated or unsaturated aliphatic carboxylic acid ligand.

[0023] In an embodiment of the present application, the solvent comprises one or more of chloroform, chlorobenzene, and ethyl benzoate.

[0024] The method for preparing the nanocrystal complex provided in the embodiments of the present application has a simple process and can be easily implemented for mass production.

[0025] In a third aspect of the present embodiment, there is provided a nanocrystal composition comprising a nanocrystal complex according to the first aspect of the present embodiment and a solvent.

[0026] In an embodiment of the present application, the mass concentration of the nanocrystal complex in the nanocrystal composition is 1 mg / mL to 100 mg / mL. A suitable concentration of the nanocrystal complex can help nanocrystal films prepared using the nanocrystal composition have good overall properties.

[0027] In an embodiment of the present application, the solvent comprises one or more of chloroform, chlorobenzene, and ethyl benzoate.

[0028] In a fourth aspect of the present embodiment, there is provided a method for preparing a patterned film, the method comprising: providing a solution comprising a nanocrystal complex according to a first aspect of the present embodiment or a nanocrystal composition according to a third aspect of the present embodiment to a substrate; performing exposure and development using a mask; and The nanocrystal complex in the exposed area is photocrosslinked and fixed to the substrate, while the nanocrystal complex in the unexposed area is removed through development, forming a patterned film.

[0029] In the present embodiment, the exposure is 0.001 mW / cm 2 to 1000mW / cm 2 This is done by means of ultraviolet radiation having a light intensity of 1000 .mu.m.

[0030] In the present embodiment, the exposure time is between 0.1 seconds and 600 seconds.

[0031] In an embodiment of the present application, the development is a solvent development, and an organic solvent capable of eluting the nanocrystal complex is used for the development.

[0032] In the method for preparing a patterned film according to the present embodiment, a good crosslinking effect can be achieved with a short exposure time, and only solvent development is required, which simplifies the process, saving energy and time, and also enabling high-resolution patterns to be obtained.

[0033] In a fifth aspect of the present application, there is provided a patterned film formed via crosslinking of a nanocrystal complex according to the first aspect of the present application, or prepared by a preparation method according to the fourth aspect of the present application.

[0034] In a sixth aspect of the present invention, there is provided an electronic component, comprising a first electrode and a second electrode facing each other, and a functional layer between the first electrode and the second electrode, wherein the functional layer comprises a crosslinked product of the nanocrystal complex according to the first aspect of the present invention, or the functional layer comprises a patterned film according to the fifth aspect of the present invention.

[0035] In an embodiment of the present application, the electronic component includes any one of an LED, a QLED, a mini LED, a micro LED, a nano LED, and a QD-OLED.

[0036] In a seventh aspect of the present embodiment, there is further provided a display device, the display device comprising an electronic component according to the sixth aspect of the present embodiment.

[0037] The present embodiment further provides an electronic device, which comprises a display device according to the seventh embodiment. [Brief explanation of the drawings]

[0038] [Figure 1] FIG. 10 is a diagram showing a pixel array obtained by performing a fine patterning process on the quantum dot layer. [Figure 2] FIG. 1 is a diagram of a process for patterning a quantum dot layer by transfer printing method. [Figure 3] FIG. 1 is a diagram of a process for patterning a quantum dot layer by photoresist etching. [Figure 4] FIG. 1 is an illustration of a process for patterning a quantum dot layer formed from a quantum dot material having patterning features. [Figure 5] 1 is a diagram of the structure of a nanocrystal complex 100 according to one embodiment of the present application. [Figure 6] FIG. 1 is a diagram of interparticle photocrosslinking of a nanocrystal complex according to one embodiment of the present application. [Figure 7] 1 is a schematic flow chart of a method for preparing a patterned film according to an embodiment of the present application. [Figure 8] 2 is a diagram of the structure of an electronic component 200 according to an embodiment of the present application. [Figure 9] 3 is a diagram of the structure of a display device 300 according to an embodiment of the present application. [Figure 10] 4 is a diagram of the structure of an electronic device 400 according to an embodiment of the present application. [Figure 11]1 is a nuclear magnetic resonance spectrum of the photosensitive ligand ChalBen prepared according to Example 1 of the present application. [Figure 12] 1 is a nuclear magnetic resonance spectrum of the photosensitive ligand ChalC5 prepared in Example 2 of the present application. [Figure 13] 1 is a nuclear magnetic resonance spectrum of the photosensitive ligand ChalC8 prepared in Example 3 of the present application. [Figure 14] 1 is a nuclear magnetic resonance spectrum of the photosensitive ligand ChalC13 prepared in Example 4 of the present application. [Figure 15] 1 is a nuclear magnetic resonance spectrum of the photosensitive ligand CouC2 prepared in Example 5 of the present application. [Figure 16] 1 is a nuclear magnetic resonance spectrum of the photosensitive ligand CouC8 prepared according to Example 6 of the present application. [Figure 17] 1 is a nuclear magnetic resonance spectrum of the photosensitive ligand CouC13 prepared in Example 7 of the present application. [Figure 18] 1A-1C show UV-VIS (ultraviolet-visible) absorption curves of quantum dot film samples at different stages according to embodiments of the present application. [Figure 19] 1 shows UV-VIS (ultraviolet-visible) absorption curves of quantum dot film samples at different stages according to examples of the present application. FIG. [Figure 20] FIG. 1 shows UV-VIS (ultraviolet-visible) absorption curves of a quantum dot film sample according to a comparative example at different stages. [Figure 21] FIG. 1 shows UV-VIS (ultraviolet-visible) absorption curves of a quantum dot film sample according to a comparative example at different stages. DETAILED DESCRIPTION OF THE INVENTION

[0039] Hereinafter, embodiments of the present application will be described with reference to the accompanying drawings.

[0040] To fabricate ultra-high-resolution display devices using quantum dot materials, it is necessary to finely pattern the quantum dot (QD) layer of quantum dot light-emitting devices (QLEDs) to obtain pixel arrays. Current industrial methods for finely patterning quantum dot layers mainly include transfer printing and photoresist etching. However, the transfer printing method has limited processing size and poor processing yield. The photoresist etching method involves many processing steps, and the developer and etchant solutions affect the quantum dot layer and functional layer. To more effectively obtain high-quality patterned quantum dot layers and meet the requirements for fabricating high-resolution display devices, embodiments of the present application provide nanocrystal complexes. These nanocrystal complexes have high photocrosslinking activity and high thermal stability (i.e., low thermal crosslinking activity). The nanocrystal complexes are used to prepare patterned films, which have a simple process and good patterning effect, and can avoid the impact of the patterning process on the quantum dot layer and functional layer.

[0041] 5 is a diagram of the structure of a nanocrystal complex 100 according to one embodiment of the present application. Nanocrystal complex 100 includes nanocrystal particle 101 and ligand 102 coordinated to the surface of nanocrystal particle 101, where ligand 102 includes a photosensitive ligand having the structure shown in Formula (I) and / or Formula (II): [ka] Formula (I) [ka] Formula (II).

[0042] In formula (I), X is a coordinating group that is coordinated to the nanocrystalline particle 101, Y is a linking group, one of A and B is -C=O- and the other is a group containing a carbon-carbon double bond, and R and R' are independently one of a hydrogen atom, a halogen atom, a nitro group, a hydroxy group, a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkoxy group, a substituted or unsubstituted alkylcarbonyl group, a substituted or unsubstituted cycloalkyl group, a substituted or unsubstituted aryl group, and a substituted or unsubstituted aryloxy group. In formula (II), X is a coordinating group coordinated to nanocrystalline particle 101; Y and Y' are linking groups; R, R', and R" are independently one of a hydrogen atom, a halogen atom, a nitro group, a hydroxy group, a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkoxy group, a substituted or unsubstituted alkylcarbonyl group, a substituted or unsubstituted cycloalkyl group, a substituted or unsubstituted aryl group, and a substituted or unsubstituted aryloxy group; and n can be 1, 2, or 3.

[0043] In an embodiment of the present application, a nanocrystal complex with high photosensitivity and high thermal stability is obtained by coordinating a photosensitive ligand having a structure represented by formula (I) and / or formula (II), which has high photocrosslinking activity and low thermal crosslinking activity, to the surface of a nanocrystal particle. The nanocrystal complex has a patterning function. The nanocrystal complex is used to prepare a patterned nanocrystal film, and the patterning process can be directly carried out through exposure and development using a solvent. In the patterning process, the nanocrystal complex can undergo photocrosslinking with a small amount of exposure and a short exposure time. In particular, crosslinking between nanocrystal complexes is achieved by using the photosensitive ligand, and no additional photoinitiator is required during the photocrosslinking process. Furthermore, since thermal crosslinking does not occur when the nanocrystal complex is subjected to heating and annealing treatments, the problem of incomplete dissolution in unexposed areas during the development process can be avoided, improving the reliability of the patterning process and facilitating the preparation of fine patterns.

[0044] In some embodiments of the present application, ligands 102 on the surface of nanocrystalline particle 101 may include one or more photosensitive ligands having the structure shown in formula (I). In some embodiments of the present application, ligands 102 on the surface of nanocrystalline particle 101 may include one or more photosensitive ligands having the structure shown in formula (II). In some embodiments of the present application, ligands 102 on the surface of nanocrystalline particle 101 may include one or more photosensitive ligands having the structure shown in formula (I) and / or one or more photosensitive ligands having the structure shown in formula (II). In some embodiments of the present application, ligands 102 on the surface of nanocrystalline particle 101 may further include ligands having different structures or different functions.

[0045] In the present embodiment, in Formula (I) and Formula (II), X is a coordinating group, i.e., a chemical group that forms a coordinate bond with the surface of nanocrystalline particle 101. The coordinating group X may be any chemical group that can form a coordinate bond with the surface of nanocrystalline particle 101, including, but not limited to, any one of a carboxy group (-COOH), an amino group (-NH), a phosphate group, a phospholipid group, and a mercapto group (-SH). These coordinating groups can help the photosensitive ligand to be suitably immobilized on the surface of the inorganic nanocrystal quantum dot.

[0046] In an embodiment of the present application, in Formula (I) and Formula (II), the linking group Y includes one or more of a substituted or unsubstituted alkylene group, a substituted or unsubstituted arylene group, a substituted or unsubstituted arylene alkyl group, a substituted or unsubstituted alkylene aryl group, a substituted or unsubstituted alkylene oxy group, a substituted or unsubstituted arylene oxy group, a substituted or unsubstituted alkylene aryl oxy group, a substituted or unsubstituted arylene alkoxy group, a carbonyl-containing group, an ester-containing and / or ether oxygen bond-containing group, and an imino-containing group. The carbonyl-containing group includes any one of -C(=O)- and -R-C(=O)-. The ester-containing group and / or the ether-oxygen bond-containing group include: -R2-C(=O)-O-, [ka] [ka] [ka] [ka] [ka] The imino-containing group includes any one of: -R3-CH2-NH-, [ka] [ka] and -R3-C(=O)-NH-. wherein R1, R2, and R3 are substituted or unsubstituted alkylene groups, and the substituents of the substituted alkylene groups in R1, R2, and R3 may be, but are not limited to, halogen atoms, particularly fluorine, chlorine, bromine, or iodine atoms.

[0047] In an embodiment of the present application, when the linking group Y has a branched structure, n in formula (I) and formula (II) is 2 or 3. In particular, when the linking group Y is [ka] or [ka] If n is 2 and the bonding group Y is [ka] [ka] or [ka] If , then n is 3.

[0048] In some embodiments of the present application, the number of carbon atoms in the linking group Y can be from 1 to 30. In some embodiments, the number of carbon atoms in the linking group Y can be 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, or 30, among others. A suitable number of carbon atoms in the linking group Y can provide a suitable balance between dispersion of the quantum dots and conductivity of the quantum dot layer.

[0049] In an embodiment of the present application, the substituted or unsubstituted alkylene group in the linking group Y may be, for example, a substituted or unsubstituted methylene group (—CH—), a substituted or unsubstituted ethylene group, a substituted or unsubstituted propylidene group, a substituted or unsubstituted isopropylidene group, a substituted or unsubstituted butylidene group, a substituted or unsubstituted isobutylidene group, a substituted or unsubstituted neopentylidene group, or a substituted or unsubstituted hexylidene group. An alkylene group is obtained by removing one hydrogen atom from an alkyl group. The substituted or unsubstituted arylene group may be a substituted or unsubstituted arylene group having 6 to 30 carbon atoms, specifically, for example, a substituted or unsubstituted phenylene group (-CH-), a substituted or unsubstituted biphenylene group, a substituted or unsubstituted triphenylene group, a substituted or unsubstituted fluorenylidene group, a substituted or unsubstituted naphthylene group, or a substituted or unsubstituted anthrylene group. The substituted or unsubstituted alkylenearyl group may be a substituted or unsubstituted alkylenephenyl group having 7 to 30 carbon atoms, specifically, for example, a methylenephenyl group (-CH-CH-) or an ethylenephenyl group (-CHCH-CH-). The substituted or unsubstituted arylene alkyl group may have 7 to 30 carbon atoms, and may in particular be a phenylene alkyl group, such as a phenylene methyl group (-CH-CH-) or a phenylene ethyl group (-CH-CHCH-). The substituted or unsubstituted alkylene oxy group may be, for example, a substituted or unsubstituted methylene oxy group (-CH-O-), a substituted or unsubstituted ethylene oxy group (-CHCH-O-), a substituted or unsubstituted propylidene oxy group (-CHCH-O-), a substituted or unsubstituted isopropylidene oxy group, a substituted or unsubstituted butylidene oxy group, a substituted or unsubstituted isobutylidene oxy group, a substituted or unsubstituted neopentylidene oxy group, or a substituted or unsubstituted hexylidene oxy group.The substituted or unsubstituted aryleneoxy group may have 6 to 30 carbon atoms, and may in particular be a phenyleneoxy group (-CH-O-). The substituted or unsubstituted alkylenearyloxy group may have 7 to 30 carbon atoms, and may in particular be an alkylenephenoxy group, such as a methylenephenoxy group (-CH-CH-O-) or an ethylenephenoxy group (-CHCH-C6H-O-). The substituted or unsubstituted arylenealkoxy group may have a number of carbon atoms, from 7 to 30, and may in particular be a phenylenealkyl group, such as a phenylenemethoxy group (-CH-CH-O-) or a phenyleneethoxy group (-CH-CHCH-O-).

[0050] In an embodiment of the present application, in the linking group Y, the substituent in the substituted alkylene group, substituted arylene group, substituted arylenealkyl group, substituted alkylenearyl group, substituted alkyleneoxy group, substituted aryleneoxy group, substituted alkylenearyloxy group, substituted arylenealkoxy group, and substituted alkylenecarbonyl group may be, but is not limited to, a halogen atom, and in particular may be a fluorine atom, a chlorine atom, a bromine atom, or an iodine atom.

[0051] In an embodiment of the present application, in formula (II), the linking group Y' may contain one or more of an oxygen atom, a sulfur atom, a substituted or unsubstituted alkylene group, a substituted or unsubstituted alkyleneoxy group, an ester-containing group, and an amide bond-containing group. The ester-containing group may be -R1-C(=O)-O-, and the amide bond-containing group may be -R3-C(=O)-NH-, where R1 and R3 are substituted or unsubstituted alkylene groups. In R1 and R3, the substituent in the substituted alkylene group may be, but is not limited to, a halogen atom, particularly a fluorine atom, a chlorine atom, a bromine atom, or an iodine atom.

[0052] In some embodiments of the present application, the number of carbon atoms in the linking group Y' can be 1 to 3. In certain embodiments, the number of carbon atoms in the linking group Y' can be 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, or 30, among others. In some embodiments, the linking group Y' is an oxygen atom.

[0053] In formula (I), one of A and B is (-C(=O)-), and the other is a chemical group containing a carbon-carbon double bond. The chemical group containing a carbon-carbon double bond may be, among other things, a substituted or unsubstituted alkenylene group, such as, among other things, a substituted or unsubstituted ethenylene group (-CH=CH-). In some embodiments, A is (-C(=O)-), and B is a chemical group containing a carbon-carbon double bond. In some embodiments, A is a chemical group containing a carbon-carbon double bond, and B is (-C(=O)-). In some embodiments, A may be attached to the para position of the linking group Y, in some embodiments, A may be attached to the ortho position of the linking group Y, and in some embodiments, A may be attached to the meta position of the linking group Y.

[0054] In embodiments of the present application, the substituents R, R', and R" may be selected from any one of a hydrogen atom, a halogen atom, a nitro group, a hydroxy group, a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkoxy group, a substituted or unsubstituted alkylcarbonyl group, a substituted or unsubstituted cycloalkyl group, a substituted or unsubstituted aryl group, and a substituted or unsubstituted aryloxy group. When R, R', and R" are halogen atoms, R, R', and R" may in particular be fluorine, chlorine, bromine, or iodine atoms. In an embodiment of the present application, the substituted or unsubstituted alkyl group in R, R', and R" may be a substituted or unsubstituted C1 to C20 alkyl group, particularly a substituted or unsubstituted C1, C2, C3, C4, C5, C6, C7, C8, C9, C10, C11, C12, C13, C14, C15, C16, C17, C18, C19, or C20 alkyl group, for example, a substituted or unsubstituted methyl group (-CH3), a substituted or unsubstituted ethyl group, a substituted or unsubstituted isopropyl group, or a substituted or unsubstituted butyl group. The substituted or unsubstituted alkoxy group may be a substituted or unsubstituted C1 to C20 alkoxy group, particularly a substituted or unsubstituted C1, C2, C3, C4, C5, C6, The alkoxy group may be a C7, C8, C9, C10, C11, C12, C13, C14, C15, C16, C17, C18, C19, or C20 alkoxy group, for example, a substituted or unsubstituted methoxy group (-OCH3), a substituted or unsubstituted ethoxy group (-OCH2CH3), a substituted or unsubstituted propoxy group, or a substituted or unsubstituted butoxy group. The substituted or unsubstituted alkylcarbonyl group may be a substituted or unsubstituted C It may be a C1 to C20 alkylcarbonyl group, in particular a substituted or unsubstituted C1, C2, C3, C4, C5, C6, C7, C8, C9, C10, C11, C12, C13, C14, C15, C16, C17, C18, C19, or C20 alkylcarbonyl group, for example a substituted or unsubstituted methylcarbonyl group (CH3-(C=O)-), a substituted or unsubstituted ethylcarbonyl group (CH3CH2-(C=O)-), a substituted The substituted or unsubstituted cycloalkyl group may be a substituted or unsubstituted C3 to C20 cycloalkyl group, such as a substituted or unsubstituted cyclopropyl group, a substituted or unsubstituted cyclobutyl group, a substituted or unsubstituted cyclopentyl group, or a substituted or unsubstituted cyclohexyl group.The substituted or unsubstituted aryl group may be a substituted or unsubstituted C6 to C20 aryl group, particularly a substituted or unsubstituted C6, C7, C8, C9, C10, C11, C12, C13, C14, C15, C16, C17, C18, C19, or C20 aryl group, such as a substituted or unsubstituted phenyl, naphthyl, biphenyl, triphenyl, fluorenyl, or anthryl group. The substituted or unsubstituted aryloxy group may be a substituted or unsubstituted C6 to C20 aryloxy group, particularly a substituted or unsubstituted C6, C7, C8, C9, C10, C11, C12, C13, C14, C15, C16, C17, C18, C19, or C20 aryloxy group, such as a substituted or unsubstituted phenoxy group. In R, R', and R", the substituents in the substituted alkyl group, substituted alkoxy group, substituted alkylcarbonyl group, substituted cycloalkyl group, substituted aryl group, and substituted aryloxy group may be, but are not limited to, a halogen atom (including a fluorine atom, a chlorine atom, a bromine atom, or an iodine atom). For example, the substituted alkyl group may be a trifluoromethyl group, a trifluoroethyl group, etc. In formula (I), R and R' may be located on any vacant carbon atom (a carbon atom not bound to bonding group Y, chemical group A, and chemical group B) in the ring structure in which R and R' are located. In formula (II), R" may be located on any vacant carbon atom in the ring structure in which R" is located.

[0055] In some embodiments of the present application, the photosensitive ligand having the structure shown in formula (I) may specifically include any one of the compounds shown in formulas (I-1) to (I-14): [ka] Formula (I-1) [ka] Formula (I-2)

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[0056] In formulas (I-1) to (I-14), m is an integer equal to or greater than 0. In particular, m may be, for example, 0, 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, or 29.

[0057] In some embodiments of the present application, the photolabile ligand having the structure shown in formula (II) may specifically include any one of the compounds shown in formulas (II-1) to (II-12): [ka] Formula (II-1) [ka] Formula (II-2) [ka] Formula (II-3) [ka] Formula (II-4) [ka] Formula (II-5) [ka] Formula (II-6) [ka] Formula (II-7) [ka] Formula (II-8) [ka] Formula (II-9) [ka] Formula (II-10) [ka] Formula (II-11) [ka] Formula (II-12).

[0058] In formulas (II-1) to (II-12), m is an integer of 0 or greater. In particular, m may be, for example, 0, 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, or 29.

[0059] In embodiments of the present application, the nanocrystalline particles include one or more of II-VI compounds, IV-VI compounds, III-V compounds, III-VI compounds, VIB-VIA compounds, VIII-VI compounds, I-VI compounds, Group I element materials, Group IV element materials, I-IV-VII compounds, and perovskite compounds. The nanocrystalline particles in embodiments of the present application may be composed of one of the aforementioned materials or two or more of the aforementioned materials. The nanocrystalline particles may be particles of a single material, particles of a homogeneous mixture, particles of a gradient mixture, particles with a core-shell structure, etc., or may be doped with the aforementioned compounds.

[0060] In some embodiments of the present application, the nanocrystalline particles may include, but are not limited to, CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, PbS, PbSe, PbTe, HgS, HgSe, HgTe, GaN, GaP, GaAs, InP, InAs, ZnO, SnO2, TiO2, In2O3, Ga2O3, SiO2, NiO, MoO3, WO3, Cu2O, CuO, Fe3O4, Au, Ag, carbon dots, CsPbCl3, CsPbBr3, CsPbI3, CH3NH3PbCl3, CH3NH3PbBr3, CH3NH3PbI3, mixtures, gradient mixtures or core-shell structures of the foregoing, core-shell structures of mixtures of the foregoing, core-shell structures of gradient mixtures of the foregoing, etc. In embodiments of the present application, the nanocrystalline particles may be prepared as needed or commercially obtained.

[0061] In embodiments of the present application, the nanocrystalline particles may be quantum dots, and in particular may be red quantum dots, green quantum dots, or blue quantum dots.

[0062] In embodiments of the present application, the nanocrystalline particles may have a particle size of 5 nm to 20 nm. A suitable particle size of the nanocrystalline particles is important for obtaining good luminescence properties. In some embodiments, the nanocrystalline particles may have a particle size of 5 nm, 6 nm, 7 nm, 8 nm, 9 nm, 10 nm, 11 nm, 12 nm, 13 nm, 14 nm, 15 nm, 16 nm, 17 nm, 18 nm, 19 nm, or 20 nm.

[0063] In embodiments of the present application, the total mass of the ligands 102 on the surface of the nanocrystalline particle 101 is 1% to 30% of the mass of the nanocrystalline particle 101. Specifically, the total mass of the ligands 102 coordinated to the surface of the nanocrystalline particle 101 is 1% to 30% of the mass of the nanocrystalline particle 101. In some embodiments, the total mass of the ligands 102 on the surface of the nanocrystalline particle 101 is 1%, 2%, 5%, 10%, 12%, 15%, 20%, 25%, or 30% of the mass of the nanocrystalline particle 101. Specifically, the total mass of the photosensitive ligands having the structure shown in Formula (I) and / or Formula (II) on the surface of the nanocrystalline particle 101 is 1% to 30% of the mass of the nanocrystalline particle 101. A suitable coordination amount of the photosensitive ligands helps the nanocrystalline complex to achieve high photosensitivity and high thermal stability, thereby helping to make good use of the properties of the nanocrystalline particle.

[0064] See Figure 6. The nanocrystal complex according to the present embodiment can undergo interparticle crosslinking under ultraviolet irradiation based on the photosensitive ligands having the structure shown in formula (I) and / or formula (II) coordinated to the surface of the nanocrystal particles. In this case, a patterned film can be directly prepared through exposure to light through a mask and development with a solvent. Specifically, the nanocrystal complex in the exposed region undergoes photocrosslinking under ultraviolet irradiation to form a film, while the nanocrystal complex in the unexposed region does not undergo photocrosslinking and is dissolved in a solvent, thereby obtaining a patterned film.

[0065] In further embodiments of the present application, there is provided a method for preparing the aforementioned nanocrystal complex, the method comprising: The method includes the steps of dispersing nanocrystalline particles having a first ligand coordinated to their surface in a solvent, adding a photosensitive ligand to the structure represented by formula (I) and / or formula (II), and stirring and reacting to obtain ligand-exchanged nanocrystalline particles, i.e., nanocrystalline complexes.

[0066] In the present embodiment, stirring may be performed at room temperature to allow the reaction to occur. The stirring time for allowing the reaction to occur may be 10 to 120 minutes. In the present embodiment, the first ligand may include a saturated or unsaturated aliphatic carboxylic acid ligand, particularly, but not limited to, an oleic acid ligand. In the present embodiment, the solvent may include, but is not limited to, one or more of chloroform, chlorobenzene, and ethyl benzoate. In the present embodiment, the mass of the added photosensitive ligand having the structure shown in Formula (I) and / or Formula (II) may be equal to the mass of the nanocrystalline particle whose surface is coordinated with the first ligand. That is, the mass of the added photosensitive ligand having the structure shown in Formula (I) and / or Formula (II) is equal to the total mass of the first ligand and the nanocrystalline particle.

[0067] In some embodiments of the present application, after the reaction is completed by stirring, a single precipitation is performed using excess methanol, and the precipitate is collected to obtain the nanocrystalline complex product in powder form. Alternatively, the precipitate may be redissolved in a solvent to obtain a liquid product in which the nanocrystalline complex is dispersed. The solvent may include, but is not limited to, one or more of chloroform, chlorobenzene, and ethyl benzoate.

[0068] In an embodiment of the present application, the photosensitive ligand having the structure shown in formula (I) may be obtained by introducing a target group into a hydroxyl-substituted chalcone as a starting material. For example, the photosensitive ligand having the structure shown in formula (I-1) may be obtained by reacting a hydroxyl-substituted chalcone with a diacid using the preparation process shown in reaction formula (1). [ka] (Reaction Scheme 1) Here, m may be an integer of 0 or greater.

[0069] In the embodiment of the present application, the photosensitive ligand having the structure shown in formula (II) may be obtained by introducing a target group into the hydroxyl-substituted coumarin as a starting material. For example, the preparation process of the photosensitive ligand having the structure shown in formula (I-1) may be as follows: [ka] (Reaction Scheme 2) Here, m may be an integer of 0 or greater.

[0070] The method for preparing the nanocrystal complex provided in the embodiments of the present application has a simple process and can be easily implemented for quantitative production.

[0071] In one embodiment of the present application, there is further provided a nanocrystal composition comprising the nanocrystal complex described above in the present application and a solvent, which in the present application may include one or more of chloroform, chlorobenzene, and ethyl benzoate, but is not limited thereto.

[0072] In embodiments of the present application, the mass concentration of the nanocrystal complex in the nanocrystal composition may be 1 mg / mL to 100 mg / mL. In some embodiments, the mass concentration of the nanocrystal complex is 1 mg / mL, 5 mg / mL, 10 mg / mL, 15 mg / mL, 20 mg / mL, 30 mg / mL, 40 mg / mL, 50 mg / mL, 60 mg / mL, 70 mg / mL, 80 mg / mL, 90 mg / mL, or 100 mg / mL. A suitable concentration of the nanocrystal complex can help nanocrystal films prepared using the nanocrystal composition have good inclusive properties.

[0073] See Figure 7. In one embodiment of the present application, there is further provided a method for preparing a patterned film, the method comprising: In the embodiment of the present application, the method includes the steps of providing a solution containing the nanocrystal complex or providing the nanocrystal composition on a substrate 11 to form a coating layer 12, and then performing exposure and development using a mask 13. Here, the nanocrystal complex in the exposed area is photocrosslinked and applied to the substrate 11, and the nanocrystal complex in the unexposed area is removed through development to form a patterned film 12'.

[0074] In present embodiments, the exposure time may be from 0.1 seconds to 600 seconds. In some embodiments, the exposure time may be, for example, 0.1 seconds, 10 seconds, 15 seconds, 30 seconds, 40 seconds, 50 seconds, 60 seconds, or 100 seconds. In present embodiments, the exposure time is 365 nm light wavelength and 0.001 mW / cm 2 to 1000mW / cm 2 In some embodiments, the light intensity may be, for example, 0.001 mW / cm. 2 , 1 mW / cm 2 , 5mW / cm 2 , 10mW / cm 2 , 20mW / cm 2 , 30mW / cm 2 , 50mW / cm 2 , or 100 mW / cm 2 may be.

[0075] The nanocrystal complex in the present embodiment has good photosensitivity, and crosslinking can be achieved with low radiation dose and short exposure time to complete the preparation of patterned films, thereby saving energy and time.

[0076] In the embodiment of the present application, the development is a solvent development, and an organic solvent capable of dissolving the nanocrystal complex is used for the development, and the solvent may be, for example, chloroform.

[0077] In the present embodiment, after the coating layer is formed, an annealing treatment may be performed before exposure and development. Since the nanocrystal complex in the present embodiment has low thermal-sensitive crosslinking activity, crosslinking of the coating layer of the nanocrystal complex during annealing, which may affect the results of the micropatterning process, can be avoided.

[0078] The method for preparing a patterned film according to the present invention can achieve a good crosslinking effect with a short exposure time and only requires solvent development, simplifying the process, thereby saving energy and time and enabling high-resolution patterns to be obtained.

[0079] In one embodiment of the present application, there is further provided a patterned film formed by crosslinking the nanocrystal complex described above in the embodiment of the present application, or a patterned film prepared by the preparation method described above in the embodiment of the present application.The patterned film can be used to prepare high-resolution patterns, for example, to obtain subpixel sizes of less than 10 micrometers or less than 3 micrometers.

[0080] See Figure 8. An embodiment of the present application further provides an electronic component 200. The electronic component 200 includes a first electrode 201 and a second electrode 202 that are opposite to each other, and a functional layer 203 between the first electrode 201 and the second electrode 202. The functional layer 203 includes a crosslinked product of the nanocrystal complex 100 according to an embodiment of the present application, and the functional layer 203 includes a patterned film according to an embodiment of the present application.

[0081] In the present embodiment, the electronic component 200 may include, but is not limited to, any one of an LED, a QLED, a mini LED, a micro LED, a nano LED, and a QD-OLED. In the present embodiment, the electronic component 200 may be an upright component or an inverted component.

[0082] In the present embodiment, the first electrode 201 and the second electrode 202 are the anode and the cathode, respectively. Materials for the anode and the cathode are conductive materials and may be independently selected from conductive metals, conductive metal oxides, conductive polymers, etc. Conductive metals may include one or more metallic elemental materials such as magnesium (Mg), aluminum (Al), gold (Au), platinum (Pt), palladium (Pd), and alloys thereof. Conductive metal oxides may include one or more of, but are not limited to, indium tin oxide (ITO), indium zinc oxide (IZO), aluminum-doped zinc oxide (AZO), fluorine-doped tin dioxide (FTO), phosphorus-doped tin dioxide (PTO), etc. Conductive polymers include, but are not limited to, polythiophenes, polypyrroles, polyphenylamines, etc.

[0083] In the present embodiment, the functional layer 203 includes a light-emitting layer 2031. The light-emitting layer 2031 includes a crosslinked product of the nanocrystal complex 100 described above in the present embodiment, or the functional layer 203 includes a patterned film described above in the present embodiment.

[0084] In this embodiment, the functional layer 203 further includes a first carrier transport layer 2032 between the first electrode 201 and the light-emitting layer 2031, and a second carrier transport layer 2033 between the second electrode 202 and the light-emitting layer 2031. For example, the first electrode 201 is an anode, and the second electrode 202 is a cathode. The first carrier transport layer 2032 may include one or more of a hole injection layer 2032a, a hole transport layer 2032b, and an electron blocking layer 2032c between the anode 201 and the light-emitting layer 2031. The hole injection layer 2032a is disposed between the anode 201 and the hole transport layer 2032b, and the electron blocking layer 2032c is disposed between the light-emitting layer 2031 and the hole transport layer 2032b. The second carrier transport layer 2033 may include one or more of an electron injection layer 2033a, an electron transport layer 2033b, and a hole blocking layer 2033c between the cathode 202 and the light-emitting layer 2031. The electron injection layer 2033a is disposed between the cathode 202 and the electron transport layer 2033b, and the hole blocking layer 2033c is disposed between the cathode 202 and the hole transport layer 2032b. In some embodiments, as shown in FIG. 8 , the electronic component 200 includes an anode 201, a hole injection layer 2032a, a hole transport layer 2032b, an electron blocking layer 2032c, the light-emitting layer 2031, a hole blocking layer 2033c, an electron transport layer 2033b, and an electron injection layer 2033a, provided in this order. It should be noted that not all layers of the functional layer 203 are necessarily required, but the light-emitting layer 2031 is required.Alternatively, for example, in the direction from the anode 201 to the cathode 202, the functional layer 203 may include, in order, a stacked structure of "light-emitting layer 2031 / electron transport layer 2033b", or a stacked structure of "light-emitting layer 2031 / electron injection layer 2033a", or a stacked structure of "hole injection layer 2032a / light-emitting layer 2031 / electron transport layer 2033b", or a stacked structure of "hole injection layer 2032a / light-emitting layer 2031 / electron injection layer 2033a". a" stacked layer structure, or a stacked layer structure of "hole transport layer 2032b / light-emitting layer 2031 / electron transport layer 2033b", or a stacked layer structure of "hole injection layer 2032a / hole transport layer 2032b / light-emitting layer 2031 / electron transport layer 2033b", or a stacked layer structure of "hole injection layer 2032a / hole transport layer 2032b or electron blocking layer 2032c / light-emitting layer 2031 / hole blocking layer 2033c or electron transport layer 2033b / electron injection layer 2033a", or a stacked layer structure of "hole injection layer 2032a / hole transport layer 2032b / electron blocking layer 2032c / light-emitting layer 2031 / hole blocking layer 2033c or electron transport layer 2033b / electron injection layer 2033a", etc. Here, " / " indicates the boundary of layers. In the present application, the thickness of each layer is not particularly limited and may be determined by those skilled in the art based on actual requirements. The material of each layer is a conventional choice in the prior art and is not particularly limited in the present application.

[0085] In some embodiments, the electronic component 200 may further include a base plate 204 (as shown in FIG. 8 ). The base plate 204 may be disposed on the side of the anode 201 far from the functional layer 203 (as shown in FIG. 8 ), or the base plate 204 may be disposed on the side of the cathode 202 far from the functional layer 203. In other words, the electronic component 200 may be a bottom-emitting component or a top-emitting component. The base plate 204 serves as a support for the entire electronic component 200 and may be made of quartz, glass, monoatomic silicon, metal, plastic, or the like. In some embodiments, the base plate 204 is made of optically transparent glass or plastic. The shape of the base plate 204 may be determined based on a specific application scenario and may be, for example, plate-like, film-like, or sheet-like. The thickness of the base plate 204 is not particularly limited. The base plate 204 may include an active matrix or passive matrix driving circuit.

[0086] In the present application, the preparation process of each layer of the anode 201, cathode 202, and functional layer 203 is not particularly limited and may be performed by physical vapor deposition, chemical vapor deposition, coating, etc. Physical vapor deposition may include one or more of vacuum deposition (such as resistance evaporation, electron beam evaporation, and pulsed laser deposition), sputtering (such as magnetron sputtering), etc. Coating methods may include solution spin coating, dip coating, blade coating, spray coating, roll coating, inkjet coating, screen printing, etc. Typically, the anode 201 and cathode 202 are prepared by vacuum deposition, and each layer of the functional layer 203 may be prepared by vacuum deposition or coating. The manufacture of the electronic component 200 shown in FIG. 8 is used as an example. First, the anode 201 is formed on the base plate 204, then the functional layer 203 including the light-emitting layer 2031 is sequentially formed on the anode 201, and then the cathode 202 is formed on the functional layer 203. In another embodiment of the present application, the cathode 202 and the functional layer 203 including the light-emitting layer 2031 may be sequentially formed on the base plate 204 , and then the anode 201 may be formed on the functional layer 203 .

[0087] For example, the material of the hole injection layer may include, but is not limited to, aniline conductive polymer, polythiophene conductive polymer, etc. The material of the hole transport layer may include, but is not limited to, arylamine organic material (e.g., TFB), etc. The material of the electron transport layer may include, but is not limited to, alkaline earth metal oxide (e.g., zinc oxide), etc. Furthermore, the thickness of each layer is not particularly limited in this application and may be determined by those skilled in the art based on actual requirements.

[0088] In some embodiments, the process for fabricating a quantum dot light emitting device (QLED) includes: preparing a hole injection layer on the cleaned ITO anode base plate; providing a hole transport layer on the hole injection layer; Sequentially preparing red, green, and blue three-color patterned quantum dot film layers on the hole transport layer; preparing an electron injection layer on the patterned three-color quantum dot film layer of red, green, and blue; providing a metal electrode on the electron injection layer; may have

[0089] In certain embodiments of the present application, the process for fabricating a quantum dot light emitting device QLED may be as follows: (1) A clean ITO base plate was sonicated in deionized water, followed by 10 minutes of sonication in ethanol, and then spin-coated with an aqueous solution of poly(3,4-ethylenedioxythiophene)-polystyrene sulfonic acid (pedot:pss) at a rotation speed of 2500 rpm and an acceleration of 800 rpm for 30 seconds, followed by heating to 150°C in air and holding for 30 minutes to obtain a pedot:pss film layer. (2) The pedot:pss film layer was spin-coated with 6 mg / mL of cross-linkable TFB (poly[(9,9-fluorenyl-2,7-diyl)-alt-(4,4'-(N-(4-sec-butylphenyl)diphenylamine)]) in chlorobenzene solution at a rotation speed of 2800 rpm and an acceleration rate of 900 rpm, followed by annealing at 190 °C for 30 min in a nitrogen atmosphere to obtain a TFB film layer. (3) The TFB film layer is spin-coated with the red quantum dot solution of the present invention at a rotation speed of 2500 rpm and an acceleration of 800 rpm for 30 seconds to obtain a quantum dot film layer, which is then irradiated with a 365 nm LED flat panel light source (energy density of approximately 30 mW / cm2) using a mask corresponding to the red subpixels for 15 to 60 seconds to crosslink. (4) The quantum dot thin film layer is spin-coated with a chloroform solution at a rotation speed of 2500 rpm and an acceleration of 800 rpm for 30 seconds, and then developed to remove the unexposed portions of the red quantum dot layer. (5) Following step (3) and step (4), sequential exposure and development are carried out to prepare patterned films of green quantum dots and blue quantum dots. (6) For the red, green, and blue quantum dot film layers, spin-coat with a 30 mg / mL ZnO solution at a rotation speed of 4000 rpm and an acceleration of 4000 rpm for 30 seconds. (7) Finally, a 100 nm silver electrode is evaporated at a rate of 0.1 nm / s.

[0090] As known to those skilled in the art, different microcavity structures are required for the red, green, and blue elements of the top emitting element, and different thicknesses of hole transport layers (e.g., TFB materials) and / or electron transport layers (e.g., ZnO or other metal oxides with electron transport capabilities) may be prepared for the red, green, and blue subpixels, as needed. The order of preparing the red, green, and blue quantum dot patterned films may also be changed as needed.

[0091] See Fig. 9. In one embodiment of the present application, there is further provided a display device 300. The display device 300 includes the electronic component 200 described above in the embodiment of the present application.

[0092] In an embodiment of the present application, the display device 300 may be a visual display device in any product or component having a display function, such as a mobile phone, a tablet computer, a notebook computer, a wearable device (such as a smart watch or a smart band), a television, a digital camera, a video camera, a player, a microdisplay device (such as smart glasses, a virtual reality (VR) device, or an augmented reality (AR) device), a telephone set, a printer, a means of transportation, a household appliance, an advertising board, an information bulletin board, or a central control screen of a vehicle.

[0093] See Fig. 10. In an embodiment of the present application, an electronic device 400 is further provided. The electronic device 400 includes the above-mentioned display device 300 in the embodiment of the present application. The electronic device 400 may be any electronic product with a display function, such as a mobile phone, a tablet computer, a notebook computer, a wearable device (such as a smart watch or a smart band), a television, a digital camera, a video camera, a player, a microdisplay device (such as smart glasses, a virtual reality (VR) device, or an augmented reality (AR) device), a telephone set, a printer, transportation means, home appliances, an advertising board, an information bulletin board, or a central control screen of a vehicle.

[0094] Hereinafter, the embodiments of the present application will be further described using several embodiments.

[0095] Example 1 Synthesis of the photolabile ligand ChalBen: In a DMF (N,N-dimethylformamide) solution, the acidic reactants p-chlorophenylacetic acid and K2CO3 are added to the hydroxyl-substituted chalcone at room temperature, refluxed for 1.5 hours, and then cooled to room temperature to obtain a reaction solution. Deionized water is added to the reaction solution, and then hydrochloric acid is added to adjust the pH to acidic to obtain a mixture. Next, dichloromethane (DCM) is added to the mixture to extract the product. Finally, the organic phase is dried with magnesium sulfate (MgSO4). The organic phase is concentrated and purified by silica gel column chromatography using n-hexane and ethyl acetate in a volume ratio of 2:3 to obtain the photosensitive ligand ChalBen. Figure 11 shows the nuclear magnetic resonance spectrum of the photosensitive ligand ChalBen prepared in Example 1 of this application. The above reaction process is illustrated in Equation (1): [ka] Hydroxyl-substituted chalcone Photolabile ligand ChalBen Formula (1) Example 2 Synthesis of the photosensitive ligand ChalC5 In a DMF solution, K2CO3 and glutaric anhydride are added to the hydroxyl-substituted chalcone and reacted at 50°C for approximately 2 hours. After the reaction, a 2 mol / L hydrochloric acid solution is added to the mixture to adjust the pH to approximately 2 to 3. Next, dichloromethane (DCM) is added to the mixture to extract the product, and finally the organic phase is dried with magnesium sulfate (MgSO4). The organic phase is concentrated and purified by silica gel column chromatography using a 10:1 volume ratio of dichloromethane and ethyl acetate to obtain the photosensitive ligand ChalC5. Figure 12 shows the nuclear magnetic resonance spectrum of the photosensitive ligand ChalC5 prepared in Example 2 of this application. The reaction process is shown in equation (2): [ka] Hydroxyl-substituted glutaric anhydride photolabile ligand ChalC5 formula (2) Culcon Example 3 Synthesis of the photosensitive ligand ChalC8 Octanedioic acid (triphosphoric acid), acetonitrile (ACN), carbodiimide (EDAC), and 4-dimethylaminopyridine (DMAP) solutions are mixed and stirred at 0°C for 1 hour to obtain a mixture. Hydroxyl-substituted chalcone is added to the resulting mixture at room temperature and reacted at 42°C for 50 minutes. Rotary evaporation is performed to remove the acetonitrile. The remaining mixture is redissolved in dichloromethane and washed sequentially with 2 mol / L HCl, saturated NaCl solution, and deionized water. Purification is performed by silica gel column chromatography using a 10:1 volume ratio of dichloromethane and ethyl acetate to obtain the photolabile ligand ChalC8. Figure 13 shows the nuclear magnetic resonance spectrum of the photolabile ligand ChalC8 prepared according to Example 3 of the present application. The reaction process is shown in Equation (3): [ka] Octanedioic acid Photosensitive ligand ChalC8 Formula (3) Example 4 Synthesis of the photosensitive ligand ChalC13 Dodecanedioic acid, acetonitrile (ACN), carbodiimide (EDAC), and 4-dimethylaminopyridine (DMAP) solutions are mixed and stirred at 0°C for 1 hour to obtain a mixture. Hydroxyl-substituted chalcone is added to the resulting mixture at room temperature and allowed to react at 42°C for 1 hour. Rotary evaporation is performed to remove the acetonitrile. The remaining mixture is redissolved in dichloromethane and washed sequentially with 2 mol / L HCl, saturated NaCl solution, and deionized water. Silica gel column chromatography is performed using a 10:1 volume ratio of dichloromethane and ethyl acetate to purify the mixture and obtain the photolabile ligand ChalC8. Figure 14 shows the nuclear magnetic resonance spectrum of the photolabile ligand ChalC13 prepared according to Example 4 of the present application. The reaction process is shown in equation (4): [ka] Dodecanedioic acid Photosensitive ligand ChalC13 Formula (4) Example 5 Synthesis of photosensitive ligand CouC2 In a DMF solution, hydroxy-substituted coumarin is added with chloroacetic acid and potassium carbonate (K2CO3) at room temperature and refluxed at 155°C for 1 hour. Next, deionized water is added, and 2 mol / L hydrochloric acid is added to adjust the pH to acidic, filtered, and washed with water. The resulting solid is evaporated and dried to obtain the photosensitive ligand CouC2. Figure 15 shows the nuclear magnetic resonance spectrum of the photosensitive ligand CouC2 prepared in Example 5 of the present application. The reaction process is shown in equation (5): [ka] Hydroxyl-substituted coumarin photolabile ligand CouC2 Formula (5) Example 6 Synthesis of photosensitive ligand CouC8 Octanedioic acid, acetonitrile (ACN), carbodiimide (EDAC), and 4-dimethylaminopyridine (DMAP) solutions were mixed and stirred at 0°C for 1 hour to obtain a mixture. Hydroxyl-substituted coumarin was dissolved in acetonitrile and added to the mixture at room temperature. The mixture was then reacted at 40-45°C for 45 minutes. Rotary evaporation was performed to remove the acetonitrile. The remaining mixture was redissolved in chloroform and washed sequentially with 2 mol / L HCl, saturated NaCl solution, and deionized water. The organic phase was dried over magnesium sulfate (MgSO4), and the solvent chloroform was then removed. Finally, recrystallization was performed from ethanol, filtered to obtain a liquid phase, and the ethanol was removed to obtain the photolabile ligand ChalC8. Figure 16 shows the nuclear magnetic resonance spectrum of the photolabile ligand CouC8 prepared according to Example 6 of the present application. The reaction process is shown in equation (6): [ka] Hydroxyl-substituted octanedioic acid photolabile ligand CouC8 formula (6) Coumarin Example 7 Synthesis of the photosensitive ligand CouC13 Tridecanedioic acid, acetonitrile (ACN), carbodiimide (EDAC), and 4-dimethylaminopyridine (DMAP) solutions are mixed and stirred at 0°C for 1 hour to obtain a mixture. Hydroxyl-substituted coumarin is dissolved in acetonitrile and added to the mixture at room temperature, followed by reaction at 45°C for 2 hours. Rotary evaporation is performed to remove the acetonitrile. The remaining mixture is redissolved in chloroform and washed sequentially with 2 mol / L HCl, saturated NaCl solution, and deionized water. The organic phase is dried over MgSO4, and the solvent chloroform is then removed. Finally, recrystallization is performed using ethanol, followed by filtration to obtain a liquid phase, and the ethanol is removed to obtain a white solid product, i.e., the photolabile ligand ChalC13. Figure 17 shows the nuclear magnetic resonance spectrum of the photolabile ligand CouC13 prepared according to Example 7 of the present application. The reaction process is shown in equation (7): [ka] Hydroxyl-substituted coumarin photolabile ligand CouC13 Formula (7) For example, green quantum dots are used. The synthesis of green quantum dots includes the following steps: (1) Dissolve 5 mmol of Se powder and 5 mmol of S powder in 5 mL of trioctylphosphine (TOP) solution to obtain the (Se + S)-TOP precursor. (2) 0.14 mmol of cadmium acetate, 3.41 mmol of zinc oxide, and 7 mL of oleic acid were added to a 50 mL three-neck flask and heated to 150 °C for 30 minutes under nitrogen protection to remove acetic acid and water. 15 mL of octadecene (ODE) was added and the reaction system was heated to 310 °C. 2 mL of (Se + S)-TOP precursor was added, and the three-neck flask was cooled to 300 °C. The reaction was carried out for 15 minutes to obtain green CdZnSeS / ZnS quantum dots. (3) Add an excess of methanol and acetone (volume ratio 3:1) to precipitate the quantum dots and centrifuge at 8000 rpm for 5 minutes. Dissolve the precipitate in 5 mL of octane solution, then precipitate again with 15 mL of acetone and centrifuge at 8000 rpm for 5 minutes. Repeat this step once. (4) Prepare the resulting quantum dot precipitate in a 50 mg / mL chloroform solution for use.

[0096] Quantum dot ligand exchange: For example, the oleic acid ligand was replaced with the photosensitive ligand ChalC8 prepared in Example 3. 1 mL of quantum dots was taken in a 50 mg / mL chloroform solution, and an equal mass of the photosensitive ligand ChalC8 (50 mg) was added. The mixture was stirred at room temperature for 30 minutes to obtain ligand-exchanged quantum dots, i.e., quantum dots whose surfaces were coordinated with the photosensitive ligand ChalC8. This yielded quantum dot complexes. The quantum dot complexes were then precipitated once with excess methanol. The precipitate was redissolved in chloroform to prepare a 7.5 mg / mL quantum dot solution for spin coating. The resulting quantum dot solution was used to prepare patterned quantum dot films, and the photocrosslinking and thermal crosslinking properties were evaluated.

[0097] Preparation of patterned quantum dot films: (1) Preparation of quantum dot film: A clean glass sheet was spin-coated with a 30 mg / mL ethanolic ZnO solution at 2800 rpm and an acceleration of 900 rpm for 30 seconds. After spin-coating, the ZnO film was obtained by annealing at 150 °C for 30 minutes under a nitrogen atmosphere. Next, the resulting quantum dot solution was spin-coated onto the ZnO film at 2500 rpm and an acceleration of 800 rpm for 30 seconds. (2) The quantum dot film sample obtained by spin coating is annealed at 100°C for 10 minutes. (3) Exposure: A 365 nm LED flat panel light source (energy density approximately 30 mW / cm) is applied to the quantum dot film layer. 2 ) and crosslinking is carried out for 15 to 60 seconds. (4) Development: The entire glass sheet with the quantum dot film layer is immersed in a chloroform solution and left for 1 minute. The quantum dot complexes in the exposed areas are photocrosslinked under UV irradiation to form a thin film, while the quantum dot complexes in the unexposed areas are not photocrosslinked and can be dissolved in a solvent, resulting in a patterned quantum dot thin film.

[0098] Evaluation of photocrosslinking effect and thermal crosslinking properties: The UV-VIS (ultraviolet-visible) absorption curves of the quantum dot film samples at different stages were measured. The results are shown in Figures 18 and 19. Quantum dots whose surfaces were coordinated with linolenic acid ligands were used as a comparison example. The UV-VIS absorption curves of the quantum dot film samples at different stages were measured. The results are shown in Figures 20 and 21. Dissolution with a developing solvent was performed by immersing the sample in chloroform solution for 1 minute.

[0099] In Figure 18, curve 1 is the UV-VIS absorption curve of a quantum dot film whose surface is coordinated with the ligand ChalC8 and that has not been subjected to photocrosslinking or elution with a developing solvent (immersion in chloroform for 1 minute) (i.e., the results of a blank control experiment without any treatment). Curve 2 is the UV-VIS absorption curve of a quantum dot film whose surface is coordinated with the ligand ChalC8 after annealing at 100°C for 10 minutes, photocrosslinking for 15 seconds, and elution with a developing solvent. From Figure 18, it can be seen that the quantum dots whose surface is coordinated with the ligand ChalC8 after annealing at 100°C for 10 minutes, photocrosslinking for 15 seconds, and elution with a developing solvent have a retention rate of over 95%, indicating that the ligand ChalC8 has a high degree of photocrosslinking. In Figure 20, curve 1 is the UV-VIS absorption curve of a quantum dot film whose surface is coordinated with linolenic acid ligands and that has not been subjected to photocrosslinking or development solvent (immersion in chloroform solution for 1 minute) (i.e., the experimental result of a blank control without any treatment). Curves 2, 3, and 4 are the UV-VIS absorption curves of quantum dot films whose surface is coordinated with linolenic acid ligands and that have been photocrosslinked for 5, 10, and 15 minutes, respectively, and then eluted with a developer solution. Figure 20 shows that under the same elution conditions with a developer solution, quantum dots whose surface is coordinated with linolenic acid ligands after 5 to 15 minutes of photocrosslinking have a retention rate of less than 80%. Compared to the comparative example, quantum dots whose surface is coordinated with the ligand ChalC8 in the present embodiment are fully crosslinked under short-term light irradiation conditions, demonstrating good photocrosslinking effects. If the absorbance in the UV-VIS absorption curve of the quantum dot film sample after exposure and development is significantly lower than that of the quantum dot film sample before exposure and development, the quantum dot complexes have poor photocrosslinking effect and are therefore washed away by the developing solvent.If the absorbance in the UV-VIS absorption curve of the quantum dot film sample after exposure and development is significantly higher than that of the quantum dot film sample before exposure and development, the photocrosslinking effect can be said to be good.

[0100] In Figure 19, curve 1 is the UV-VIS absorption curve of a quantum dot film whose surface was coordinated with the ligand ChalC8 and which had not been subjected to photocrosslinking, annealing, or elution with a developing solvent (immersion in chloroform for 1 minute) (i.e., the results of a blank control experiment without any treatment). Curve 2 is the UV-VIS absorption curve of a quantum dot film whose surface was coordinated with the ligand ChalC8, which had been annealed at 100 °C for 10 minutes and then eluted with a developing solvent but had not been photocrosslinked. Figure 19 shows that even after annealing at 100 °C for 10 minutes, the ligand ChalC8 was unlikely to undergo spontaneous crosslinking, and the residual amount after elution was less than 15%. This suggests that the ligand ChalC8 has a low degree of thermal crosslinking. In Figure 21, curve 1 is the UV-VIS absorption curve of a quantum dot film whose surface is coordinated with linolenic acid ligands and has not been subjected to photocrosslinking, annealing, or dissolution in a developing solvent (immersion in chloroform for 1 minute) (i.e., the results of a blank control experiment without any treatment). Curve 2 is the UV-VIS absorption curve of a quantum dot film whose surface is coordinated with linolenic acid ligands and has not been subjected to photocrosslinking, but has been annealed at 100°C for 10 minutes and then dissolution in a developing solvent. Figure 21 shows that by annealing at 100°C for 10 minutes, the remaining amount of quantum dots whose surface is coordinated with linolenic acid ligands in the comparative example reaches 50%. This suggests that the linolenic acid ligands have a high degree of thermal crosslinking.

[0101] The photosensitive ligands in Examples 1, 2, and 4 to 7 were prepared into quantum dot solutions by the same method as described above, and then patterned quantum dot films were prepared. Each of the photosensitive ligands in Examples 1, 2, and 4 to 7 achieved a retention rate of over 90% after 15 to 60 seconds of photocrosslinking, and the retention rate after dissolution under annealing conditions was less than 20%, indicating that the nanocrystal complexes prepared with the photosensitive ligands in Examples 1, 2, and 4 to 7 have high photocrosslinking activity and low thermal crosslinking activity.

[0102] It should be understood that the terms "first," "second," and various numerals used herein are used merely to distinguish between descriptions for ease of description and are not intended to limit the scope of the present application.

[0103] In this application, "and / or" indicates a relationship between related entities and indicates that three relationships may exist. For example, A and / or B can indicate that only A is present, that both A and B are present, or that only B is present. Here, A and B may be singular or plural. The character " / " typically indicates an "or" relationship between related entities.

[0104] As used herein, "at least one" means one or more, and "plurality" means two or more. "At least one of each of the following items" or similar phrases refers to any combination of those items, including any combination of single items or multiple items. For example, "at least one of a, b, or c" or "at least one of a, b, and c" may refer to a, b, c, ab (i.e., a and b), ac, bc, or abc, where a, b, and c may be singular or plural.

[0105] It should be understood that the sequential numbers of the above processes do not refer to the order of implementation in various embodiments of the present application. Some or all of the steps may be implemented in parallel or sequentially. The order of implementation of the processes should be determined based on the functions and internal logic of the processes, and should not be construed as any limitation on the implementation process of the embodiments of the present application.

Claims

1. 1. A nanocrystal complex comprising: nanocrystalline particles and ligands coordinated to the surface of the nanocrystalline particles; The ligand includes a photosensitive ligand having a structure represented by formula (I) and / or formula (II), 【Chemical 1】 (Formula I) 【Chemistry 2】 (Formula II) In formula I, X is a coordinating group coordinated to the nanocrystalline particle; Y is a bonding group; one of A and B is —C═O— and the other is a group containing a carbon-carbon double bond; R and R′ are independently one of a hydrogen atom, a halogen atom, a nitrogen group, a hydroxy group, a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkoxy group, a substituted or unsubstituted alkylcarbonyl group, a substituted or unsubstituted cycloalkyl group, a substituted or unsubstituted aryl group, and a substituted or unsubstituted aryloxy group; In Formula II, X is a coordinating group coordinated to the nanocrystalline particle, Y and Y' are linking groups, and R, R', and R" are independently one of a hydrogen atom, a halogen atom, a nitro group, a hydroxy group, a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkoxy group, a substituted or unsubstituted alkylcarbonyl group, a substituted or unsubstituted cycloalkyl group, a substituted or unsubstituted aryl group, and a substituted or unsubstituted aryloxy group; n is 1, 2, or 3,

2. 2. The nanocrystal complex of claim 1, wherein the coordinating group comprises any one of a carboxy group, an amino group, a phosphate group, a phospholipid group, and a mercapto group.

3. 3. The nanocrystal complex of claim 1, wherein the linking group Y comprises one or more of a substituted or unsubstituted alkylene group, a substituted or unsubstituted arylene group, a substituted or unsubstituted arylenealkyl group, a substituted or unsubstituted alkylenearyl group, a substituted or unsubstituted alkyleneoxy group, a substituted or unsubstituted aryleneoxy group, a substituted or unsubstituted alkylenearyloxy group, a substituted or unsubstituted arylenealkoxy group, a carbonyl-containing group, an ester-containing group and / or an ether oxygen bond-containing group, and an imino-containing group.

4. The carbonyl-containing group is —C(═O)— and —R 1 -C(=O)-, and the ester-containing group and / or the ether-oxygen bond-containing group includes any one of -R 2 -C(=O)-O-, 【Chemistry 3】 【Chemistry 4】 【Chemistry 5】 【Chemistry 6】 【Chemistry 7】 and the imino-containing group is any one of -R 3 -CH 2 -NH-, 【Chemistry 8】 【Chemistry 9】 and −R 3 -C(=O)-NH-, where R 1 , R 2 , and R 3 4. The nanocrystal complex of claim 3, wherein is a substituted or unsubstituted alkylene group.

5. 5. The nanocrystal complex of claim 3, wherein the number of carbon atoms in the linking group Y is 1 to 30.

6. 10. The nanocrystal complex of claim 1, wherein the linking group Y' comprises one or more of an oxygen atom, a sulfur atom, a substituted or unsubstituted alkylene group, a substituted or unsubstituted alkyleneoxy group, an ester-containing group, and an amide bond-containing group.

7. 7. The nanocrystal complex of claim 6, wherein the linking group Y' has 0 to 30 carbon atoms.

8. 8. The nanocrystal complex of claim 1, wherein in R, R', and R", the substituted or unsubstituted alkyl group is a substituted or unsubstituted C1 to C20 alkyl group, the substituted or unsubstituted alkoxy group is a substituted or unsubstituted C1 to C20 alkoxy group, the substituted or unsubstituted alkylcarbonyl group is a substituted or unsubstituted C1 to C20 alkylcarbonyl group, the substituted or unsubstituted cycloalkyl group is a substituted or unsubstituted C3 to C20 cycloalkyl group, the substituted or unsubstituted aryl group is a substituted or unsubstituted C6 to C20 aryl group, and the substituted or unsubstituted aryloxy group is a substituted or unsubstituted C6 to C20 aryloxy group.

9. The photosensitive ligand having the structure represented by formula (I) includes any one of the compounds represented by formulas (I-1) to (I-14), 【Chemistry 10】 Formula (I-1) 【Chemistry 11】 Formula (I-2) 【Chemistry 12】 Formula (I-3) 【Chemistry 13】 Formula (I-4) 【Chemistry 14】 Formula (I-5) 【Chemistry 15】 Formula (I-6) 【Chemistry 16】 Formula (I-7) 【Chemistry 17】 Formula (I-8) 【Chemistry 18】 Formula (I-9) 【Chemistry 19】 Formula (I-10) 【Chemistry 20】 Formula (I-11) 【Chemical 21】 Formula (I-12) 【Chemical 22】 Formula (I-13) 【Chemical 23】 Formula (I-14) 9. The nanocrystal complex according to claim 1, wherein in formulas (I-1) to (I-14), m is an integer of 0 or greater.

10. The photosensitive ligand having the structure represented by formula (II) includes any one of the compounds represented by formulas (II-1) to (II-12), 【Chemistry 24】 Formula (II-1) 【Chemistry 25】 Formula (II-2) 【Chemical 26】 Formula (II-3) 【Chemical 27】 Formula (II-4) 【Chemical 28】 Formula (II-5) 【Chemical Formula 29】 Formula (II-6) 【Chemistry 30】 Formula (II-7) 【Chemical 31】 Formula (II-8) 【Chemical 32】 Formula (II-9) 【Chemical 33】 Formula (II-10) 【Chemical 34】 Formula (II-11) 【Chemistry 35】 Formula (II-12) 9. The nanocrystal complex according to claim 1, wherein in formula (II-1) to formula (II-12), m is an integer of 0 or more.

11. 11. The nanocrystalline complex of claim 1, wherein the nanocrystalline particles comprise one or more of a II-VI compound, a IV-VI compound, a III-V compound, a III-VI compound, a VIB-VIA compound, a VIII-VI compound, a I-VI compound, a Group I element material, a Group IV element material, a I-IV-VII compound, and a perovskite compound.

12. 12. The nanocrystal complex of claim 1, wherein the nanocrystal particles have a particle size of 5 nm to 20 nm.

13. 13. The nanocrystal complex of claim 1, wherein the total mass of the ligands on the surface of the nanocrystal particle is between 1% and 30% of the mass of the nanocrystal particle.

14. 14. A method for preparing the nanocrystal complex of any one of claims 1 to 13, comprising: Dispersing nanocrystalline particles having surfaces coordinated with first ligands in a solvent; adding the photosensitive ligand having the structure shown in formula (I) and / or formula (II); agitating the reaction to obtain the ligand-exchanged nanocrystalline particles, i.e., the nanocrystalline complex; A method comprising:

15. 15. The method of claim 14, wherein the first ligand comprises a saturated or unsaturated aliphatic carboxylic acid ligand.

16. 16. The method of claim 14 or 15, wherein the solvent comprises one or more of chloroform, chlorobenzene, and ethyl benzoate.

17. A nanocrystal composition comprising the nanocrystal complex of any one of claims 1 to 13 and a solvent.

18. 18. The nanocrystal composition of claim 17, wherein the mass concentration of the nanocrystal complex in the nanocrystal composition is from 1 mg / mL to 100 mg / mL.

19. 19. The nanocrystal composition of claim 17 or 18, wherein the solvent comprises one or more of chloroform, chlorobenzene, and ethyl benzoate.

20. 1. A method for preparing a patterned film, comprising: providing a solution comprising the nanocrystal complex of any one of claims 1 to 13 to a substrate, or providing a nanocrystal composition of any one of claims 17 to 19 to a substrate; performing exposure and development using a mask, wherein the nanocrystal complex in the exposed area is photocrosslinked and fixed to the substrate, and the nanocrystal complex in the unexposed area is removed through development, thereby forming the patterned film; A method comprising:

21. The exposure was 0.001 mW / cm 2 to 1000mW / cm 2 21. The method of claim 20, wherein the method is carried out through ultraviolet radiation having a light intensity of 1000 nm or more.

22. 22. The method for preparing according to claim 20 or 21, wherein the exposure time is from 0.1 seconds to 600 seconds.

23. 23. The method according to claim 20, wherein the development is a solvent development, and an organic solvent capable of dissolving the nanocrystal complex is used for the development.

24. 24. A patterned film formed by crosslinking the nanocrystal complex of any one of claims 1 to 13, or prepared by the preparation method of any one of claims 20 to 23.

25. An electronic component, The electronic component has a first electrode and a second electrode facing each other, and a functional layer between the first electrode and the second electrode, 25. An electronic component, wherein the functional layer comprises a crosslinked product of the nanocrystal complex according to claim 1, or the functional layer comprises the patterned film according to claim 24.

26. 26. The electronic component of claim 25, wherein the electronic component comprises any one of an LED, a QLED, a mini LED, a micro LED, a nano LED, and a QD-OLED.

27. A display device, comprising: A display device comprising the electronic component according to claim 25 or 26.

28. 28. An electronic device comprising a display apparatus according to claim 27.

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