Cassette structures and related methods for batch processing in epitaxial deposition operations

Abstract

The present disclosure relates to a cassette structure and related methods for batch processing in epitaxial deposition operations. In one implementation, a cassette configured to be disposed in a substrate processing chamber includes a first wall, a second wall spaced apart from the first wall, and one or more sidewalls extending between and coupled to the first and second walls. The cassette includes one or more inlet openings formed in the one or more sidewalls and one or more outlet openings formed in the one or more sidewalls opposite the one or more inlet openings. The cassette includes multiple levels including multiple substrate supports attached to the one or more sidewalls and spaced apart from each other along the one or more sidewalls.

Description

[Technical Field]

[0001]

[0001] The present disclosure relates to cassette structures and related methods for batch processing in epitaxial deposition operations. [Background technology]

[0002]

[0002] Semiconductor substrates are processed for a variety of applications, including the fabrication of integrated circuit devices and microdevices. However, operations (e.g., epitaxial deposition operations) can be lengthy, expensive, inefficient, and limited in capacity and throughput. Operations can also be limited with respect to film growth rate. Additionally, hardware can have relatively large dimensions that occupy a larger footprint in a fabrication facility. Furthermore, operations can present bottlenecks in temperature control, gas control, and / or center-to-edge control and adjustability of the substrate. Such bottlenecks can be exacerbated in relatively complex processing operations and / or operations requiring one-sided deposition.

[0003]

[0003] Therefore, there is a need for improved apparatus and methods in semiconductor processing. Summary of the Invention

[0004]

[0004] The present disclosure relates to cassette structures and related methods for batch processing in epitaxial deposition operations.

[0005] In one implementation, a cassette configured to be disposed within a substrate processing chamber includes a first wall, a second wall spaced apart from the first wall, and one or more side walls extending between the first wall and the second wall and coupled to the first and second walls. The cassette includes one or more inlet openings formed in the one or more side walls and one or more outlet openings formed in the one or more side walls opposite the one or more inlet openings. The cassette includes a plurality of levels including a plurality of substrate supports attached to the one or more side walls and spaced apart from one another along the one or more side walls.

[0006] In one implementation, an apparatus for substrate processing includes a chamber body having a processing space, a plurality of gas injection passages formed within the chamber body and positioned as a plurality of injection levels, and one or more gas exhaust passages formed within the chamber body opposite the plurality of gas injection passages. The apparatus also includes one or more heat sources configured to generate heat, a pedestal assembly positioned within the processing space, and a cassette positioned within the processing space and at least partially supported by the pedestal assembly. The cassette includes a first wall, a second wall spaced from the first wall, and one or more sidewalls extending between the first and second walls. The cassette includes a plurality of inlet openings formed in the one or more sidewalls and positioned as a plurality of flow levels, each flow level of the plurality of flow levels aligned with and in fluid communication with a respective injection level of the plurality of injection levels. The cassette includes one or more outlet openings formed in the one or more sidewalls opposite the plurality of inlet openings, and a plurality of substrate supports attached to the one or more sidewalls.

[0007] In one implementation, a method for processing multiple substrates includes positioning a first substrate within a processing space of a chamber and positioning a second substrate within the processing space at a substrate distance from the first substrate. The method includes positioning a third substrate over the second substrate such that an outer surface of the third substrate contacts an outer surface of the second substrate. The method includes flowing one or more process gases into the processing space and heating the first substrate, the second substrate, and the third substrate. The method includes simultaneously depositing one or more layers on each of the first substrate, the second substrate, and the third substrate while the third substrate contacts the second substrate.

[0008]

[0008] So that the above-mentioned features of the present disclosure may be understood in detail, a more particular description of the present disclosure briefly summarized above will be obtained by reference to embodiments, some of which are illustrated in the accompanying drawings. It should be noted, however, that the accompanying drawings illustrate only exemplary embodiments and therefore should not be considered limiting in scope, as the present disclosure may admit of other equally effective embodiments. [Brief explanation of the drawings]

[0009] [Figure 1A] 1 is a schematic cross-sectional side view of a processing device according to one implementation. [Figure 1B] 1B is a schematic cross-sectional side view of the processing device shown in FIG. 1A according to one implementation. [Figure 2] FIG. 2 is a schematic cross-sectional side view of the cassette shown in FIGS. 1A and 1B according to one implementation. [Figure 3] 3 is a schematic cross-sectional side view of the cassette shown in FIG. 2 during a deposition operation, according to one implementation. [Figure 4] FIG. 4 is a schematic cross-sectional top view of the cassette shown in FIGS. 2 and 3 according to one implementation. [Figure 5] FIG. 5 is a schematic partial side view of the cassette shown in FIGS. 2-4, according to one implementation. [Figure 6] FIG. 4 is a schematic cross-sectional top view of the cassette shown in FIGS. 2 and 3 according to one implementation. [Figure 7] FIG. 7 is a schematic partial side view of the cassette shown in FIG. 6 according to one implementation. [Figure 8] FIG. 4 is a schematic cross-sectional top view of the cassette shown in FIGS. 2 and 3 according to one implementation. [Figure 9] FIG. 3 is a schematic enlarged view of the cassette shown in FIG. 2 according to one implementation. [Figure 10] FIG. 3 is a schematic enlarged view of the cassette shown in FIG. 2 according to one implementation. [Figure 11] FIG. 4 is a schematic cross-sectional top view of the cassette shown in FIGS. 2 and 3 according to one implementation. [Figure 12] 1 is a schematic diagram of a method for processing multiple substrates. [Figure 13] FIG. 2 is a schematic cross-sectional side view of the cassette shown in FIGS. 1A and 1B according to one implementation. [Figure 14] FIG. 14 is a schematic cross-sectional side view of the cassette shown in FIG. 13 during a deposition operation, according to one implementation. DETAILED DESCRIPTION OF THE INVENTION

[0010]

[0024] For ease of understanding, where possible, identical reference numerals have been used to designate identical elements common to the figures. It is intended that elements and features of one embodiment may be beneficially incorporated in other embodiments without further description.

[0011]

[0025] The present disclosure relates to cassette structures and related methods for batch processing in epitaxial deposition operations.

[0012]

[0026] It is contemplated that the present disclosure contemplates that terms such as "couple," "connection," "connection," and "coupled" may include, but are not limited to, welding, fusion, melt bonding, interference fit, and / or fastening (e.g., using bolts, threaded connections, pins, and / or screws). It is contemplated that the present disclosure contemplates that terms such as "couple," "connection," "connection," and "coupled" may include, but are not limited to, integral formation. It is contemplated that the present disclosure contemplates that terms such as "couple," "connection," "connection," and "coupled" may include, but are not limited to, direct connection and / or indirect connection (e.g., indirect connection via a component such as a link).

[0013]

[0027] 1A is a schematic side cross-sectional view of a processing apparatus 100 according to one implementation. The lateral heat sources 118a, 118b shown in FIG. 1B are not shown in FIG. 1A for the sake of visual clarity. The processing apparatus 100 includes a processing chamber having a chamber body 130 defining a processing space 124.

[0014]

[0028] The cassette 230 is positioned within the processing space 124 and is at least partially supported by the pedestal assembly 119. The cassette 230 supports multiple substrates 255 for simultaneous processing (e.g., epitaxial deposition). In the implementation shown in FIG. 1A, the cassette 230 supports eight substrates. The cassette 230 can support other numbers of substrates, including, but not limited to, two substrates 255, three substrates 255, six substrates 255, or twelve substrates 255.

[0015]

[0029] The processing apparatus 100 includes an upper window 116 (e.g., a dome) disposed between the lid 104 and the processing space 124. The processing apparatus 100 includes a lower window 115 disposed below the processing space 124. One or more upper heat sources 106 are positioned above the processing space 124 and the upper window 116. The one or more upper heat sources 106 may be radiant heat sources such as lamps (e.g., halogen lamps). The one or more upper heat sources 106 are disposed between the upper window 116 and the lid 104. The upper heat sources 106 are positioned to provide uniform heating of the substrate 255. One or more upper heat sources 138 are positioned below the processing space 124 and the lower window 115. The one or more lower heat sources 138 may be radiant heat sources such as lamps (e.g., halogen lamps). A lower heat source 138 is disposed between the lower window 115 and the chamber body bottom 134. The lower heat source 138 is positioned to provide uniform heating of the substrate 255.

[0016]

[0030] The present disclosure contemplates that other heat sources (in addition to or instead of lamps) may be used for the various heat sources described herein, for example, resistive heaters, light emitting diodes (LEDs), and / or lasers may be used for the various heat sources described herein.

[0017]

[0031] The upper and lower domes 116, 115 may be transparent to infrared radiation, for example, by transmitting at least 95% of the infrared radiation. The upper and lower windows 116, 115 may be a quartz material (e.g., clear quartz). In one or more embodiments, the upper window 116 includes an inner window 193 and an outer window support 194. The inner window 193 may be a thin quartz window that partially defines the processing space 124. The outer window support 194 supports the inner window 193 and is at least partially disposed within the support groove. In one or more embodiments, the lower window 115 includes an inner window 187 and an outer window support 188. The inner window 187 may be a thin quartz window that partially defines the processing space 124. The outer window support 188 supports the inner window 187.

[0018]

[0032] The processing apparatus 100 includes a pedestal assembly 119 disposed within a processing space 124. One or more liners 120 are disposed within the processing space 124 and surround the pedestal assembly 119. The one or more liners 120 facilitate shielding a chamber body 130 from processing chemistry within the processing space 124. The chamber body 130 is at least partially disposed between an upper window 116 and a lower window 115. The one or more liners 120 are disposed between the processing space 124 and the chamber body 130.

[0019]

[0033] The processing apparatus 100 includes a plurality of gas injection passages 182 formed in the chamber body 130 and in fluid communication with the processing space 124, and one or more gas exhaust passages 172 (several are shown in FIG. 1A ) formed in the chamber body 130 opposite the plurality of gas injection passages 182. The one or more gas exhaust passages 172 are in fluid communication with the processing space 124. Each of the plurality of gas injection passages 182 and the one or more gas exhaust passages 172 is formed through one or more sidewalls of the chamber body 130 and through one or more liners 120 that reinforce the one or more sidewalls of the chamber body 130.

[0020]

[0034] Each gas inlet passage 182 includes a gas channel 185 formed in the chamber body 130 and one or more gas openings 186 (two or three are shown in FIG. 1A ) formed in one or more liners 120. One or more supply conduit systems are in fluid communication with the gas inlet passages 182. In FIG. 1A , an inner supply conduit system 121 and an outer supply conduit system 122 are in fluid communication with the gas inlet passages 182. The inner supply conduit system 121 is attached to the chamber body 130 and includes multiple inner gas boxes 123 in fluid communication with the inner set of gas inlet passages 182. The outer supply conduit system 122 is attached to the chamber body 130 and includes multiple outer gas boxes 117 in fluid communication with the outer set of gas inlet passages 182.

[0021]

[0035] The processing apparatus 100 includes a flow guide structure 150 positioned within the processing space 124. The flow guide structure 150 includes one or more first flow dividers 151 (three are shown in FIG. 1A ) that divide the processing space into multiple flow levels 153 (four flow levels are shown in FIG. 1A ). The flow guide structure 150 includes one or more second flow dividers 152 (two flow sections 154 are shown for each flow level 153 in FIG. 1A ) that intersect the one or more first flow dividers 151 and are oriented to divide each flow level 153 of the multiple flow levels 153 into multiple flow sections 154. In the implementation shown in FIG. 1A , the first flow dividers 151 each include a ring, and the one or more second flow dividers 152 each include a cylindrical sleeve that surrounds the innermost one of the flow sections 154. The one or more first flow dividers 151 are coupled to the one or more liners 120 .

[0022]

[0036] The gas injection passages 182 are positioned as multiple injection levels, with each gas injection passage 182 corresponding to one of the multiple injection levels. Each injection level is aligned with a respective flow level 153. The gas injection passages 182 of each injection level open to the outermost flow section 154 of the respective flow level. In the implementation shown in FIG. 1A , two or three of the gas openings 186 are grouped in each flow level, and the gas openings 186 open to the outermost flow section 154 of the respective flow level.

[0023]

[0037] The processing apparatus 100 includes a heat shield structure 1060 positioned within the processing space 124. The heat shield structure 1060 includes a first shield plate 161 positioned inside the one or more second flow splitters 152, and a second shield plate 1062. The second shield plate 1062 is oriented transverse to the first shield plate 161 and is at least partially supported by the one or more liners 120. The first shield plate 161 may be a cylindrical sleeve.

[0024]

[0038] Each of the one or more second flow dividers 152 is formed with a plurality of divider inlet openings 155 and a plurality of divider outlet openings 156. The divider outlet openings 156 are opposite the divider inlet openings 155. As shown in FIG. 1A , two or three of the divider inlet openings 155 and two or three of the divider outlet openings 156 are grouped in each of the flow levels 153.

[0025]

[0039] First shield plate 161 is formed with a plurality of shield inlet openings 165 and a plurality of shield outlet openings 166. Shield outlet openings 166 are opposite shield inlet openings 165. Divider inlet openings 155 are offset from shield inlet openings 165 in the XY plane.

[0026]

[0040] Each of the one or more liners 120, the one or more first flow dividers 151, the one or more second flow dividers 152, the first shield plate 161, and the second shield plate 1062 is formed from one or more of quartz, silicon carbide (SiC), or graphite coated with SiC.

[0027]

[0041] A cassette 230 is positioned inside the first shield plate 161. A preheat ring 111 is disposed outside the cassette 230. The preheat ring 111 is coupled to and / or at least partially supported by the one or more liners 120. One or more second flow splitters 152 are coupled to and / or at least partially supported by the preheat ring 111.

[0028]

[0042] A portion of the flow guide structure 150 (e.g., flow divider 151) may function as a preheat ring for all flow sections 154 of each flow level 153. The preheat ring 111 may be part of the flow guide structure 150 (e.g., may be integrated with the flow guide structure 150).

[0029]

[0043] During operation (such as during an epitaxial deposition operation), one or more process gases P1 are supplied to the processing space 124 through the inner and outer supply conduit systems 121 and 122 and through the plurality of gas injection passages 182. The one or more process gases P1 are supplied from one or more gas sources 196 in fluid communication with the plurality of gas injection passages 182. Each of the gas injection passages 182 is configured to direct the one or more process gases P1 generally radially inward toward the cassette 230. As such, in one or more embodiments, the gas injection passages 182 may be part of a cross-flow gas injector. One or more flows of the one or more process gases P1 are split into multiple flow levels 153. Splitting the one or more process gases into multiple flow levels 153 facilitates uniform processing (e.g., deposition) on the substrate, center-to-edge uniformity, and process tunability.

[0030]

[0044] The processing apparatus 100 includes an exhaust conduit system 190. One or more process gases P1 are exhausted through exhaust gas openings formed in one or more liners 120, exhaust gas channels formed in the chamber body 130, and then through an exhaust gas box 1091. The one or more process gases P1 may flow from the exhaust gas box 1091 to an optional common exhaust box 1092 and then through conduits using one or more pumping devices 197 (e.g., one or more vacuum pumps).

[0031]

[0045] The one or more process gases P1 may include, for example, a purge gas, a cleaning gas, and / or a deposition gas, which may include, for example, one or more reactive gases carried in one or more carrier gases.

[0032]

[0046] A purge gas P2 supplied from a purge gas source 129 is introduced into the bottom region 105 of the processing space through one or more purge gas inlets 184 formed in the sidewall of the chamber body .

[0033]

[0047] The one or more purge gas inlets 184 are positioned at a height below the gas injection passages 182. If one or more liners 120 are used, one or more sections of the liner 120 are positioned between the gas injection passages 182 and the one or more purge gas inlets 184. In either case, the one or more purge gas inlets 184 are configured to direct the purge gas P2 generally radially inward. The one or more purge gas inlets 184 may also be configured to direct the purge gas P2 upward. During the film formation process, the pedestal assembly 119 is positioned to facilitate the purge gas P2 flowing generally along a flow path across the back surface of the cassette 230. The purge gas P2 exits the bottom region 105 and is exhausted from the processing apparatus 100 through one or more purge gas exhaust passages 102 positioned on the opposite side of the processing space 124 from the one or more purge gas inlets 184.

[0034]

[0048] The pedestal assembly 119 includes a first support frame 198 and a second support frame 199 disposed at least partially around the first support frame 198. The second support frame 199 includes arms coupled to the cassette 230 such that raising and lowering the second support frame 199 raises and lowers the cassette 230. A plurality of lift pins 189 hang from the cassette 230. As the cassette 230 lowers, the lift pins 189 initiate contact with the arms of the first support frame 198. As the cassette 230 continues to lower, the lift pins 189 begin to contact the substrates in the cassette 230, causing the lift pins 189 to raise the substrates in the cassette 230. A bottom region 105 of the processing apparatus 100 is defined between the chamber body bottom 134 and the cassette 230. The stem 125 of each support frame 198, 199 extends through the bottom 134 of the chamber body 130. The stems 125 are coupled to respective motors 164. The motors 164 are each configured to independently raise, lower, and / or rotate the cassette 230.

[0035]

[0049] Pedestal bellows ports 160 are formed in the bottom 134 of the chamber body 130. The pedestal bellows ports 160 extend through the bottom 134 of the chamber body 130. The pedestal bellows ports 160 have a diameter larger than the diameter of the stems 125 and surround each stem 125. The stems 125 extend through the bottom 134 of the chamber body 130. The pedestal bellows ports 160 circumferentially surround the stems 125. Bellows assemblies 158 are disposed around each pedestal bellows port 160 to facilitate reducing or eliminating vacuum leakage outside the chamber body 130. Each bellows assembly 158 surrounds a portion of the stem 125 that is disposed outside the chamber body 130. The bellows assemblies 158 are coupled between the outer surface of the bottom 134 of the chamber body 130 and the base member 180. The base member 180 may house the motor 164 and a portion of the stem 125 coupled to the motor 164. The bellows assembly 158 may be formed from a metallic or metallized material and configured to form a gas flow channel 162. The gas flow channel 162 is defined as the area between the outer stem 125 and the bellows assembly 158. The gas flow channel 162 extends from the pedestal bellows port 160 to the base member 180. In this manner, the gas flow channel 162 forms a hollow, cylindrical passage between the bellows assembly 158 and the stem 125. The gas flow channel 162 is fluidly coupled between the bottom region 105 and an exhaust conduit, which may be used to pump (e.g., exhaust) gas from the bottom region 105 through the pedestal bellows port 160.

[0036]

[0050] An opening 136 is formed through one or more sidewalls of the chamber body 130. The opening 136 can be used to transfer the substrate 255 to or from the cassette 230 (e.g., into or out of the processing space 124). In one or more embodiments, the opening 136 includes a slit valve. In one or more embodiments, the opening 136 can be connected to any suitable valve that allows the passage of the substrate. The opening 136 is shown in phantom in FIGS. 1A and 1B for visual clarity.

[0037]

[0051] The processing device 100 may include one or more temperature sensors 191, 192, such as optical pyrometers, that measure the temperature within the processing device 100 (e.g., on the surface of the upper window 116, or on one or more surfaces of the substrate 255 and / or cassette 230). The one or more temperature sensors 191, 192 are disposed on the lid 104.

[0038]

[0052] The processing system 100 includes a controller 1070 configured to control the processing system 100 or its components. For example, the controller 1070 can control the operation of the components of the processing system 100 by using direct control of the components or by controlling a controller associated with the components. During operation, the controller 1070 enables data collection and feedback from each chamber to regulate and control the performance of the processing system 100.

[0039]

[0053] The system controller 1070 generally includes a central processing unit (CPU) 1071, memory 1072, and support circuits 1073. The CPU 1071 may be any form of general-purpose processor that can be used in an industrial environment. The memory 1072, or non-transitory computer-readable medium, is accessible by the CPU 1071 and may be one or more memories (e.g., random access memory (RAM), read-only memory (ROM), floppy disk, hard disk, or any other form of local or remote digital storage). The support circuits 1073 are coupled to the CPU 1071 and may include cache, clock circuits, an input / output subsystem, power supplies, etc.

[0040]

[0054] The various methods (e.g., method 1200) and operations disclosed herein may generally be implemented by the execution by CPU 1071, under control of CPU 1071, of computer instruction code stored, for example, as a software routine in memory 1072 (or the memory of a particular processing chamber). Execution of the computer instruction code by CPU 1071 causes CPU 1071 to control components of processing chamber 100 to perform operations according to the various methods and operations described herein. In one embodiment, which can be combined with other embodiments, memory 1072 (a non-transitory computer-readable medium) stores instructions that, when executed, cause the methods (e.g., method 1200) and operations (e.g., operations 1201, 1202, 1204, 1206, 1207, 1208, 1210, 1212, 1213) described herein to be performed. Controller 1070 may, for example, be in communication with a heat source, a gas source, and / or one or more vacuum pumps of processing apparatus 100 to perform operations.

[0041]

[0055] Figure 1B is a schematic cross-sectional side view of the processing apparatus 100 shown in Figure 1A, according to one implementation. The cross-sectional view shown in Figure 1B is rotated 90 degrees relative to the cross-sectional view shown in Figure 1A.

[0042]

[0056] The processing apparatus 100 includes one or more side radiant heat sources 118a, 118b (e.g., side lamps, side resistive heaters, side LEDs, and / or side lasers) positioned outside the processing space 124. The one or more second side heat sources 118b are opposite the one or more first side heat sources 118a across the processing space 124.

[0043]

[0057] 1B, for visual clarity, the flow guide structure 150 and the heat shield structure 1060 are not shown. Furthermore, the present disclosure contemplates that the flow guide structure 150 and / or the heat shield structure 1060 may be omitted from the processing apparatus 100 shown in FIGS. 1A and 1B. In such an implementation, one or more process gases P1 flow from the gas injection passages 182 to the outer annulus of the processing space 124 and then to the inlet openings 234 of the cassette 230 (described below and identified in FIG. 2). The one or more process gases P1 flow from the outlet openings 235 (described below and identified in FIG. 2), to the outer annulus of the processing space 124, and into one or more gas exhaust passages 172. The present disclosure further contemplates that multiple lines (e.g., conduits) within the processing space 124 may connect each of the gas injection passages 182 to each of the inlet openings 234 of the cassette 230 (identified in FIG. 2).

[0044]

[0058] 2 is a schematic cross-sectional side view of the cassette 230 shown in FIGS. 1A and 1B according to one implementation. The view of FIG. 2 can be viewed, for example, along section 2-2 shown in FIG.

[0045]

[0059] Cassette 230 includes a first wall 231 (e.g., a lower wall), a second wall 232 (e.g., an upper wall) spaced apart from first wall 231, and one or more side walls 233 extending between and coupled to first wall 231 and second wall 232. In one or more embodiments, each of one or more side walls 233 is formed of one or more of silicon carbide (SiC), quartz (e.g., opaque quartz), and / or graphite coated with SiC. In one or more embodiments, each of first wall 231 and / or second wall 232 is formed of one or more of silicon carbide (SiC), quartz (e.g., opaque quartz), and / or graphite coated with SiC.

[0046]

[0060] The cassette 230 includes one or more entrance openings 234 formed in one or more side walls 233 and one or more exit openings 235 formed in the one or more side walls 233 opposite the one or more entrance openings 234. The cassette 230 includes a plurality of levels 236 having a plurality of substrate supports 237 attached to and spaced apart from one another along the one or more side walls 233. In the implementation of FIG. 2, five levels 236 are shown. It is contemplated in the present disclosure that various numbers of levels 236 may be used, such as two levels, three levels, or six to twelve (or more) levels.

[0047]

[0061] Each substrate support 237 on each level 236 includes one or more arcuate ring segments 238 (see FIG. 4). In one or more embodiments, the one or more arcuate ring segments 238 include a plurality of arcuate ring segments 238 spaced apart circumferentially along one or more sidewalls 233 (see FIG. 4). Each of the plurality of arcuate ring segments 238 includes an outer ledge 240 that extends into one or more sidewalls 233, and an inner ledge 241. In FIG. 2, the portion of the arcuate ring segment 238 that extends into one or more sidewalls 233 (e.g., the outer ledge 240) is shown in phantom.

[0048]

[0062] The outer ledge 240 facilitates attachment of the substrate supports 237 to one or more sidewalls 233. In one or more embodiments, the outer ledge 240 is L-shaped and is received in an L-shaped slot formed in one or more sidewalls 233. The inner ledge 241 facilitates support of multiple substrates 255a-255h. In the implementation shown in FIG. 2, the cassette 230 supports eight substrates 255a-255h during simultaneous deposition (e.g., epitaxial deposition) of one or more layers on each substrate. The first outer substrate 255a is supported by the bottom substrate support 237, and the second outer substrate 255h is supported by the top substrate support 237. Sets of two middle substrates 255b-255g are supported by their respective substrate supports 237 in a stacked configuration, with the outer surfaces 256 of the two middle substrates in each set directly contacting each other. The outer surface 256 is the backside surface opposite the deposition surface 257 on which one or more layers are formed (e.g., epitaxially grown) during a deposition operation. For the first outer substrate 255a and the second outer substrate 255h, the backside surfaces 256 face the first wall 231 and the second wall 232 of the cassette 230, respectively.

[0049]

[0063] The cassette 230 includes a reflective surface 271 on the inner surface of each of the one or more sidewalls 233. The reflective surface 271 has a reflectivity of 0.3 to 0.9999. The reflective surface 271 reflects heat (e.g., light) toward the substrates 255a-255h during deposition operations, promoting efficient heating of the substrates and facilitating maintaining the substrates at a uniform processing temperature across their processing surfaces. In one or more embodiments, the reflective surface 271 is a roughened surface of one or more sidewalls 233. The surface roughness of the roughened surface can be specified to balance reduced particle generation and increased heat transfer (e.g., via emissivity) of the reflective surface 271. In one or more embodiments, the reflective surface 271 is formed from gold (Au) or quartz, for example. In one or more embodiments, the reflective surface 271 is part of a reflective coating formed on one or more sidewalls 233.

[0050]

[0064] The inner ledge 241 of each substrate support 237 has an inner edge 242 that extends beyond the reflective surface 271 a distance D1 of 10.0 mm or less (e.g., 5.0 mm or less). The distance D1 facilitates supporting the respective substrate 255a-255h while also facilitating enhanced deposition or etch coverage of a layer on the substrate.

[0051]

[0065] FIG. 3 is a schematic cross-sectional side view of cassette 230 shown in FIG. 2 during a deposition operation, according to one implementation.

[0052]

[0066] Each of the one or more inlet openings 234 and each of the one or more outlet openings 235 are aligned between two of the plurality of substrate supports 237. The one or more inlet openings 234 and the one or more outlet openings 235 are positioned as a plurality of flow levels 251 (four flow levels 251 are shown in FIG. 3). For each flow level 251, one or more process gases P1 flow between the deposition surfaces 257 of two of the substrates 255a-255h. Each of the plurality of flow levels 251 of the cassette 230 is aligned with and in fluid communication with a respective one of the plurality of injection levels of the gas injection passage 182 (see FIG. 1A). Each of the plurality of flow levels 251 of the cassette 230 is aligned with and in fluid communication with a respective one of the plurality of flow levels 153 of the flow guide structure 150 (see FIG. 1A).

[0053]

[0067] Cassette 230 facilitates reducing or eliminating deposition on backside surfaces 256 of substrates 255a-255h during deposition operations.

[0054]

[0068] The subject matter described herein (e.g., cassette 230) facilitates increased throughput, efficient use of gases, reduced costs, and modularization of applications (e.g., single-sided deposition applications) while maintaining or improving growth rates and maintaining or improving device performance.

[0055]

[0069] The bottom substrate 255a is spaced a first wall spacing SS1 from the first wall 231, and the top substrate 255h is spaced a second wall spacing SS2 from the second wall 232. In one or more embodiments, when the wall spacings SS1, SS2 are less than distance D2, as described below, a single substrate 255a, 255h is supported on each of the bottom and top levels 236. FIG. 4 is a schematic top cross-sectional view of the cassette 230 shown in FIGS. 2 and 3 according to one implementation. FIG. 4 shows a single flow level 251 of the multiple flow levels 251. In the implementation shown in FIG. 4, for each flow level 251, the one or more inlet openings 234 include multiple inlet openings 234 (three inlet openings 234 are shown for each flow level 251) circumferentially spaced apart from each other by an angle A1 along one or more side walls 233. Angle A1 is between centerline axes 239 of the inlet openings 234. In one or more embodiments, angle A1 is within a range of 20 degrees to 120 degrees (e.g., 20 degrees, 45 degrees, 60 degrees, 90 degrees, or 120 degrees), e.g., within a range of 20 degrees to 90 degrees. In one or more embodiments, each inlet opening 234 includes a nozzle 261 in fluid communication with and / or at least partially inserted within the respective inlet opening 234. While each nozzle 261 is shown in the present disclosure, it is contemplated that an array of nozzles may be used. In one or more embodiments, the inlet openings 234 each have a circular or oval cross-sectional shape.

[0056]

[0070] The present disclosure contemplates that a single outlet opening 235 may be used for each flow level 251 of multiple flow levels 251, as shown in FIG.

[0057]

[0071] In one or more embodiments, cassette 230 includes a gap 281 (shown in phantom in FIG. 4 for visual clarity) formed in one or more sidewalls 233. Substrates 230 can be transferred into and out of cassette 230 through gap 281.

[0058]

[0072] FIG. 5 is a schematic partial side view of cassette 230 shown in FIGS. 2-4 according to one implementation.

[0059]

[0073] Each of the one or more entrance apertures 234 and / or one or more exit apertures 235 is aligned such that each centerline axis 239 is aligned a distance D2 from each of two adjacent deposition surfaces 257 of the substrates 255a-255h. In one or more embodiments, the distance D2 is 0.5 mm or greater, e.g., in the range of 0.5 mm to 20 mm. In one or more embodiments, the distance D2 is 10.0 mm. Other values ​​for the distance D2 are contemplated in the present disclosure and may depend on the process conditions, uniformity, growth rate, and / or etch rate used.

[0060]

[0074] FIG. 6 is a schematic top cross-sectional view of the cassette 230 shown in FIGS. 2 and 3 according to one implementation. FIG. 6 illustrates a single flow level 251 of the multiple flow levels 251. In the implementation illustrated in FIG. 6, for each flow level 251, one or more inlet openings include one or more slots 634 extending circumferentially along one or more sidewalls 233 by a slot angle SA1. In one or more embodiments, the slot angle SA1 is 20 degrees or greater, e.g., 30 degrees or greater, e.g., 45 degrees or 60 degrees. In one or more embodiments, the slot angle SA1 is in a range of 20 degrees to 120 degrees (e.g., in a range of 60 degrees to 120 degrees). In one or more embodiments, for each flow level 251, one or more outlet openings include one or more slots 635 extending circumferentially along one or more sidewalls by a second slot angle SA2. In one or more embodiments, the second slot angle SA2 is less than the slot angle SA1. It is contemplated in this disclosure that second slot angle SA2 may be greater than or equal to slot angle SA1.

[0061]

[0075] FIG. 7 is a schematic partial side view of cassette 230 shown in FIG. 6 according to one implementation.

[0062]

[0076] Figure 8 is a schematic top cross-sectional view of the cassette 230 shown in Figures 2 and 3, according to one implementation. Figure 8 shows a single flow level 251 of the multiple flow levels 251.

[0063]

[0077] 8 , for each flow level 251, the one or more inlet openings include one or more slots 834 that each extend circumferentially along the one or more side walls 233. The slots 834 are circumferentially spaced apart from one another along the one or more side walls 233.

[0064]

[0078] Although not shown in FIGS. 5-8 for visual clarity, the implementations of FIGS. 5-8 may include one or more arcuate ring segments 238 (eg, as shown in FIG. 4).

[0065]

[0079] 9 is a schematic, enlarged view of cassette 230 shown in FIG. 2 according to one implementation. Gas injection assembly 900 includes multiple lines 901 (e.g., conduits). Each line 901 is connected to one of inlet openings 234. Each line 901 may extend between one of inlet openings 234 and one of gas injection passages 182. The present disclosure contemplates that each line 901 may be connected to or integral with one of nozzles 261 (if used).

[0066]

[0080] 10 is a schematic, enlarged view of cassette 230 shown in FIG. 2 according to one implementation. Gas injection assembly 1000 includes multiple lines 1001 (e.g., conduits). Each line 1001 is connected to one of inlet openings 234. Each line 1001 is connected to a common distribution box 1002, which is connected to a common supply line 1003. Common distribution box 1002 may include a common supply plenum. The present disclosure contemplates that each line 1001 may be connected to or integrated with one of nozzles 261 (if used).

[0067]

[0081] Figure 11 is a schematic top cross-sectional view of the cassette 230 shown in Figures 2 and 3 according to one implementation. Figure 11 shows a single flow level 251 of the multiple flow levels 251. The implementation shown in Figure 11 is similar to the implementation shown in Figure 4 and may include one or more features, aspects, components, operations, and / or characteristics thereof.

[0068]

[0082] The gas injection assembly 1100 includes multiple lines 1101 (e.g., conduits). The inlet openings 234 include one or more central openings 234a connected to a first line 1101a, one or more first outer openings 234b connected to a second line 1101b, and one or more second outer openings 234c connected to a third line 1101c. Each line 1101 is connected to a common distribution box 1102, which is connected to a common supply line 1103. The common distribution box 1102 may include a common supply plenum. To achieve a particular uniformity in deposition or etching, the gas flow in each line 1101 may or may not be independently controlled.

[0069]

[0083] FIG. 12 is a schematic diagram of a method 1200 for processing multiple substrates.

[0070]

[0084] Operation 1201 of method 1200 includes changing the chamber pressure of a processing space within a chamber and then opening a door to the chamber. In one or more embodiments, the chamber pressure is changed to be substantially equal to or greater than a base pressure. In one or more embodiments, the base pressure is the pressure of a transfer chamber and / or a load lock chamber. The door may include, for example, a slit valve.

[0071]

[0085] Operation 1202 includes positioning a first substrate within the processing space. In one or more embodiments, positioning the first substrate includes extending the first substrate through a gap formed in one or more side walls of the cassette.

[0072]

[0086] The present disclosure contemplates that an additional substrate (e.g., substrate 255j shown in Figures 13 and 14) may be positioned on the first substrate (e.g., substrate 255a shown in Figures 13 and 14) prior to operation 1204.

[0073]

[0087] Operation 1204 includes positioning a second substrate within the processing space at a substrate spacing from the first substrate and / or at a substrate spacing from additional substrates (if used).

[0074]

[0088] Operation 1206 includes positioning the third substrate over the second substrate such that an outer surface of the third substrate contacts an outer surface of the second substrate. In one or more embodiments, the first substrate is positioned to be supported on a first substrate support, and the second substrate and the third substrate are positioned to be supported on a second substrate support spaced apart from the first substrate support.

[0075]

[0089] Operation 1207 includes closing the door (after all substrates are positioned within the processing space) and changing the chamber pressure to a processing pressure used for deposition, which in one or more embodiments is lower than the base pressure.

[0076]

[0090] Operation 1208 includes flowing one or more process gases into the process space. In one or more embodiments, flowing the one or more process gases includes flowing the one or more process gases through a first flow path between the first substrate and the second substrate and a second flow path outside the third substrate.

[0077]

[0091] Operation 1210 includes heating the first substrate, the second substrate, and the third substrate.

[0078]

[0092] Operation 1212 includes simultaneously depositing one or more layers on each of the first substrate, the second substrate, and the third substrate while the third substrate is in contact with the second substrate.

[0079]

[0093] Operation 1213 includes changing the chamber pressure and then opening the door to allow all substrates to be removed from the processing space. In one or more embodiments, the chamber pressure is changed to be substantially equal to or greater than the base pressure.

[0080]

[0094] FIG. 13 is a schematic cross-sectional side view of cassette 230 shown in FIGS. 1A and 1B according to one implementation.

[0081]

[0095] FIG. 14 is a schematic cross-sectional side view of the cassette 230 shown in FIG. 13 during a deposition operation, according to one implementation.

[0082]

[0096] 13 and 14, first wall spacing SS1 and second wall spacing SS2 are equal to distance D2. In such an implementation, additional substrates 255i, 255j are stacked on substrates 255a, 255h, respectively, so that each and every level 236 supports two substrates. In the implementation shown in FIGS. 13 and 14, cassette 230 supports ten substrates 255a-255j, with substrate 255i being the second outer substrate (instead of substrate 255h).

[0083]

[0097] Advantages of the present disclosure include increased throughput, efficient gas use, reduced costs, shorter processing times, increased chamber capacity, increased growth rates of deposited films, improved device performance, more uniform device performance across multiple substrates, more uniform and stable thermal processing across multiple substrates, and reduced size and footprint (e.g., of the chamber). The advantages also include uniformity tunability (e.g., control and adjustability of process temperature, control and adjustability of gas parameters, and center-to-edge control and adjustability of the substrate). By way of example, such advantages are facilitated in relatively complex operations, such as those requiring single-sided deposition (e.g., reducing or eliminating deposition on the backside surface of the substrate).

[0084]

[0098] Advantages also include improved device performance and modular application. As an example, batch processing can be used for relatively complex epitaxial growth operations in a relatively small footprint and with relatively high throughput, while maintaining or improving growth rates and device performance. Such advantages of the present application are facilitated by implementations of the present disclosure.

[0085]

[0099] It is contemplated that the aspects described herein may be combined. For example, one or more features, aspects, components, operations, and / or characteristics of processing apparatus 100, cassette 230, gas inject assembly 900, gas inject assembly 1000, gas inject assembly 1100, and / or method 1200 may be combined. It is further contemplated that any combination can achieve the aforementioned advantages.

[0086]

[0100] While the above description is directed to embodiments of the present disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof, the scope of which is determined by the claims that follow.

Claims

1. 1. A cassette configured to be disposed within a substrate processing chamber, comprising: The first wall, a second wall spaced apart from the first wall; one or more side walls extending between and connected to the first wall and the second wall; one or more inlet openings formed in said one or more side walls; one or more outlet openings formed in the one or more side walls opposite the one or more inlet openings; and a plurality of levels each comprising a plurality of substrate supports attached to and spaced apart from one another along said one or more side walls; A cassette equipped with:

2. The cassette of claim 1 , wherein each of the one or more side walls is formed from one or more of silicon carbide (SiC), quartz, or graphite coated with SiC.

3. 10. The cassette of claim 1, wherein each substrate support in each of said plurality of levels comprises one or more arcuate ring segments.

4. The cassette of claim 3 , wherein the one or more arcuate ring segments comprise a plurality of arcuate ring segments spaced apart circumferentially along the one or more side walls.

5. The cassette of claim 4 , wherein each of said plurality of arcuate ring segments includes an outer ledge extending into said one or more side walls.

6. 10. The cassette of claim 1, further comprising a reflective surface on an interior surface of each of said one or more side walls.

7. The cassette of claim 6 , wherein the reflective surface is a roughened surface of the one or more sidewalls.

8. 8. The cassette of claim 7, wherein the reflective surface is part of a liner formed from gold (Au) or quartz.

9. 7. The cassette of claim 6, wherein each of the plurality of substrate supports comprises an inner ledge having an inner edge that extends beyond the reflective surface a distance of 10.0 mm or less.

10. The cassette of claim 1 , wherein each of the one or more entrance openings is aligned between two of the plurality of substrate supports.

11. The cassette of claim 10 , wherein the one or more inlet openings are positioned as multiple flow levels.

12. 12. The cassette of claim 11, wherein for each flow level, the one or more inlet openings include a plurality of inlet openings circumferentially along the one or more side walls spaced apart from one another by an angle, the angle being in the range of 20 degrees to 120 degrees.

13. The cassette of claim 11 , wherein for each flow level, the one or more inlet openings include a plurality of inlet openings having a circular or oval cross-sectional shape.

14. 12. The cassette of claim 11, wherein for each flow level, the one or more inlet openings comprise one or more slots extending circumferentially along the one or more side walls by a slot angle.

15. 1. An apparatus for substrate processing comprising a chamber body, The chamber body, A processing space; a plurality of gas injection passages formed within the chamber body and positioned as a plurality of injection levels; one or more gas exhaust passages formed in the chamber body opposite the plurality of gas injection passages; the chamber body including: one or more heat sources configured to generate heat; a pedestal assembly positioned within the processing space; and a cassette positioned within the processing space and at least partially supported by the pedestal assembly; wherein the cassette comprises: The first wall and a second wall spaced apart from the first wall; and one or more side walls extending between the first wall and the second wall; a plurality of inlet openings formed in the one or more side walls and positioned as a plurality of flow levels, each flow level of the plurality of flow levels aligned with and in fluid communication with a respective injection level of the plurality of injection levels; one or more outlet openings formed in the one or more side walls opposite the plurality of inlet openings; a plurality of substrate supports attached to the one or more sidewalls; The device is provided with:

16. 16. The apparatus of claim 15, wherein the one or more side walls are connected to the first wall and the second wall, and the plurality of substrate supports are positioned as a plurality of levels and spaced apart from one another along the one or more side walls.

17. 1. A method for processing a plurality of substrates, comprising: Positioning a first substrate within a processing volume of a chamber; positioning a second substrate within the processing space at a substrate spacing from the first substrate; positioning a third substrate over the second substrate such that an outer surface of the third substrate contacts an outer surface of the second substrate; flowing one or more process gases into the process space; heating the first substrate, the second substrate, and the third substrate; simultaneously depositing one or more layers on each of the first substrate, the second substrate, and the third substrate while the third substrate is in contact with the second substrate; A method comprising:

18. 20. The method of claim 17, wherein the first substrate is positioned to be supported on a first substrate support, and the second substrate and the third substrate are positioned to be supported on a second substrate support spaced apart from the first substrate support.

19. 20. The method of claim 18, wherein flowing the one or more process gases comprises flowing the one or more process gases through a first flow path between the first substrate and the second substrate and a second flow path outside the third substrate.

20. 18. The method of claim 17, wherein positioning the first substrate comprises extending the first substrate through a gap formed in one or more side walls of a cassette.

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