Millimeter wave antenna and its manufacturing method, electronic device and its driving method

Abstract

The present application provides a millimeter-wave antenna and a manufacturing method thereof, and an electronic device and a driving method thereof, which relate to the display technology field. The manufacturing method of the millimeter-wave antenna includes the steps of providing a first substrate, forming a confinement layer on the first substrate, processing the confinement layer so that the confinement layer has a plurality of via holes, and forming an electrode layer in each of the via holes in the confinement layer, the electrode layer including a radiation pattern and a feed line, both of which have a lattice-line structure. In the manufacturing method of the millimeter-wave antenna according to the present application, the aspect ratio of the millimeter-wave antenna is controlled by the confinement layer, thereby obtaining a millimeter-wave antenna with a high aspect ratio.

Description

[Technical Field]

[0001] The present application relates to the field of display technology, and more particularly to a millimeter-wave antenna and a manufacturing method thereof, an electronic device and a driving method thereof. [Background technology]

[0002] With the development of science and technology, Antenna on Display (AoD) technology has emerged, which places an antenna on the display area of ​​electronic devices, sacrificing some loss to expand the antenna's coverage area and achieve better radiation.

[0003] However, in AoD technology, the antenna is located in the display area of ​​the screen, so it is important to ensure the antenna's radiation without affecting the display of the electronic device.

[0004] Therefore, there is an urgent need to provide electronic devices that satisfy the above performance requirements. Summary of the Invention

[0005] The embodiments of the present application adopt the following technical solutions.

[0006] In one aspect, the present embodiments include: providing a first substrate; forming a confinement layer on the first substrate; treating the confinement layer so that the confinement layer has a plurality of via holes; forming an electrode layer in each of the via holes of the confinement layer, the electrode layer including a radiation pattern and a feed line, and both the radiation pattern and the feed line including a lattice line structure.

[0007] Optionally, said step of forming a confinement layer on said first substrate comprises: forming at least a first planar layer on the first substrate; said step of treating said confinement layer so that said confinement layer has a plurality of via holes comprises: treating at least the first planar layer so that the first planar layer has a plurality of via holes; The step of forming an electrode layer in each of the via holes of the confinement layer comprises: The method includes forming the electrode layer at least in each of the via holes of the first planar layer.

[0008] Optionally, said step of forming at least a first planar layer on said first substrate comprises: forming the first planar layer on the first substrate; The step of treating at least the first planar layer so that the first planar layer has a plurality of via holes comprises: treating the first planar layer so that the first planar layer has a plurality of via holes; The step of forming the electrode layer in each of the via holes in at least the first planar layer includes: The method includes forming the electrode layer in each of the via holes in the first planar layer.

[0009] Optionally, said step of forming at least a first planar layer on said first substrate comprises: forming a first buffer layer on the first substrate; forming the first planarization layer on the first buffer layer; forming a mask layer on the first planar layer; The step of treating at least the first planar layer so that the first planar layer has a plurality of via holes comprises: simultaneously processing at least two of the first buffer layer, the first planar layer, and the mask layer such that each of the first buffer layer, the first planar layer, and the mask layer has a plurality of via holes; The step of forming the electrode layer in each of the via holes in at least the first planar layer includes: The method includes forming the electrode layer at least in each of the via holes in the first buffer layer and in each of the via holes in the first planar layer.

[0010] Optionally, the step of simultaneously processing two of the at least the first buffer layer, the first planar layer, and the mask layer, such that each of the first buffer layer, the first planar layer, and the mask layer has a plurality of via holes, comprises: sequentially processing the mask layer, the first planar layer, and the first buffer layer so that each of the mask layer, the first planar layer, and the first buffer layer has a plurality of via holes; The step of forming the electrode layer in at least each of the via holes in the first buffer layer and each of the via holes in the first planar layer includes: The method includes forming the electrode layer in each of the via holes of the mask layer, in each of the via holes of the first planar layer, and in each of the via holes of the first buffer layer.

[0011] Optionally, the material of said mask layer comprises a non-metal.

[0012] Optionally, the step of simultaneously processing two of the at least the first buffer layer, the first planar layer, and the mask layer, such that each of the first buffer layer, the first planar layer, and the mask layer has a plurality of via holes, comprises: treating the mask layer so that the mask layer has a plurality of via holes; sequentially processing the first planar layer and the first buffer layer such that both the first planar layer and the first buffer layer have a plurality of via holes; The step of forming the electrode layer at least in each of the via holes of the first buffer layer and in each of the via holes of the first planar layer includes: removing the mask layer; forming the electrode layer in each of the via holes of the first planar layer and in each of the via holes of the first buffer layer.

[0013] Optionally, the step of simultaneously processing at least two of the first buffer layer, the first planar layer, and the mask layer, such that each of the first buffer layer, the first planar layer, and the mask layer has a plurality of via holes, comprises: sequentially processing the mask layer, the first planar layer, and the first buffer layer so that the mask layer, the first planar layer, and the first buffer layer each have a plurality of via holes; The step of forming the electrode layer at least in each of the via holes of the first buffer layer and in each of the via holes of the first planar layer includes: removing the mask layer; forming the electrode layer in each of the via holes of the first planar layer and in each of the via holes of the first buffer layer.

[0014] Optionally, the material of said mask layer comprises a metal.

[0015] Optionally, after the step of providing a first substrate and before the step of forming a confinement layer on the first substrate, the manufacturing method further comprises: The method further includes forming a surface seed layer on the first substrate.

[0016] Optionally, after the step of forming an electrode layer in each of the via holes of the confinement layer, the manufacturing method further comprises: The method further includes forming a second planar layer on the electrode layer.

[0017] Optionally, after the step of forming a second planar layer on the electrode layer, the manufacturing method further comprises: The method further includes forming a second substrate on the second planar layer.

[0018] Optionally, after the step of providing a first substrate and before the step of forming a surface seed layer on the first substrate, the manufacturing method further comprises: further comprising forming a release layer on the first substrate; After the step of forming a second substrate on the second planar layer, the manufacturing method further comprises: The method further includes removing the release layer and the first substrate.

[0019] Optionally, after the step of forming a second substrate on the second planar layer, the manufacturing method further comprises: The method further includes forming a second protective layer on the second substrate.

[0020] In another aspect, the present embodiments include: a first substrate; a confinement layer disposed on the first substrate and having a plurality of via holes; and an electrode layer provided in each of the via holes of the limiting layer, the electrode layer including a radiation pattern and a feed line, both of the radiation pattern and the feed line including a lattice line structure.

[0021] Optionally, the confinement layer comprises at least a first planar layer; The first flat layer has a plurality of via holes, and the electrode layer is provided in at least each of the via holes of the first flat layer.

[0022] Optionally, the confinement layer comprises a first planar layer; The first flat layer has a plurality of via holes, and the electrode layer is provided in each of the via holes of the first flat layer.

[0023] Optionally, the confinement layer further comprises a first buffer layer and a mask layer, the first buffer layer being disposed between the first substrate and the first planar layer, and the mask layer being disposed on a side of the first planar layer facing away from the first substrate; The first buffer layer, the first planar layer, and the mask layer all have a plurality of via holes, and the electrode layer is provided in each of the via holes in the mask layer, in each of the via holes in the first planar layer, and in each of the via holes in the first buffer layer.

[0024] Optionally, the confinement layer further comprises a first buffer layer, the first buffer layer being disposed between the first substrate and the first planar layer; Both the first buffer layer and the first flat layer have a plurality of via holes, and the electrode layer is provided in each of the via holes of the first flat layer and each of the via holes of the first buffer layer.

[0025] In yet another aspect, an embodiment of the present application provides an electronic device including the above-described millimeter wave antenna.

[0026] Optionally, the electronic device includes a display device including a display panel, the display panel including a display substrate and the above-mentioned millimeter-wave antenna, the millimeter-wave antenna being disposed on the light-emitting side of the display substrate.

[0027] Optionally, the display panel further comprises a touch layer, the touch layer being disposed between the display substrate and the millimeter-wave antenna; Alternatively, the touch layer is provided on the side of the millimeter-wave antenna that is away from the display substrate.

[0028] Optionally, the display panel further includes a first polarizing unit and a cover plate; the first polarization unit is provided on a side of the millimeter-wave antenna that is farther from the display substrate, The cover plate is disposed on a side of the first polarizing unit that is away from the display substrate.

[0029] Optionally, the display device further includes a first controller and a second controller, wherein the first controller is electrically connected to the display substrate and configured to control the display substrate; The second controller is electrically connected to the millimeter-wave antenna and configured to control the millimeter-wave antenna.

[0030] Optionally, the display panel includes a display area and a frame area connected to the display area, and the millimeter-wave antenna and the display substrate are both located in the display area and the frame area; the first controller is coupled to the display substrate located in the frame region; The millimeter-wave antenna further extends along the frame region of the display panel in a direction away from the display region, and the portion of the millimeter-wave antenna extending from the display panel includes a bent region and a non-bent region, and the bent region is located between the non-bent region and the frame region of the display panel, and the second controller is located in the non-bent region and coupled to the millimeter-wave antenna located in the non-bent region.

[0031] Optionally, the display device further includes a ground layer, the ground layer being located on a side of the portion of the millimeter-wave antenna extending from the display panel that is closer to the first substrate, the ground layer being located in the non-bending region and the bending region; The electrode layer of the millimeter-wave antenna is further provided on the second controller and on the side of the millimeter-wave antenna away from the ground layer of the portion extending from the display panel, and is located in the bending region and the non-bending region, and the electrode layer is configured to be bent in the bending region together with the ground layer.

[0032] Optionally, the display panel includes a display area and a frame area connected to the display area, and the millimeter-wave antenna and the display substrate are both located in the display area and the frame area; the first controller is coupled to the display substrate located in the frame region; A portion of the second controller is located in the frame area and is coupled to the millimeter-wave antenna located in the frame area.

[0033] Optionally, a remaining portion of the second controller extends along the frame region of the display panel in a direction away from the display region, and includes a bending region and a non-bending region, the bending region being located between the non-bending region and the frame region of the display panel; the display device further includes a ground layer, the ground layer being provided on a side of the second controller closer to the first substrate and having a gap between the ground layer and the frame region, the ground layer being located in the non-bending region and a part of the bending region; The electrode layer of the millimeter-wave antenna is further provided on a side away from the ground layer of the second controller and is located in the bending region and the non-bending region, and the electrode layer of the millimeter-wave antenna is configured to be bent in the bending region together with the remaining portion of the second controller and the ground layer.

[0034] In a further aspect, the present embodiments comprise: the first controller controls the display board to display; The second controller controls the millimeter-wave antenna to emit the millimeter-wave.

[0035] The above description is only a summary of the technical solution of the present application. In order to more clearly understand the technical solution of the present application, the following provides specific embodiments of the present application, which can be implemented according to the content of the specification, and to make the above and other objectives, features and advantages of the present application more clearly understandable. [Brief explanation of the drawings]

[0036] In order to more clearly explain the technical solutions in the embodiments of the present application or related art, the following briefly introduces drawings necessary for describing the embodiments or prior art. However, the drawings in the following description are only some embodiments of the present application, and it is obvious to those skilled in the art that other drawings can be obtained based on these drawings without any creative efforts. [Figure 1]1a to 1k are flowcharts illustrating a method for manufacturing a first millimeter-wave antenna according to an embodiment of the present invention. [Figure 2] 2a to 2n are flowcharts of a method for manufacturing a second millimeter-wave antenna according to an embodiment of the present invention. [Figure 3] 3a to 3q are a flowchart of a method for manufacturing a third millimeter-wave antenna according to an embodiment of the present application. [Figure 4] 4a to 4p are a flowchart of a method for manufacturing a fourth millimeter-wave antenna according to an embodiment of the present invention. [Figure 5] FIG. 5 is a structural schematic diagram of a millimeter-wave antenna according to an embodiment of the present invention, which is not provided with the first buffer layer shown in FIG. 2d. [Figure 6] FIG. 6 is a structural schematic diagram of the millimeter-wave antenna shown in FIG. 2d according to an embodiment of the present application. [Figure 7] FIG. 7 is a structural schematic diagram of the millimeter-wave antenna shown in FIG. 2i according to an embodiment of the present application. [Figure 8] FIG. 8 is a schematic diagram of a lattice line structure of the millimeter-wave antenna shown in FIG. 2i according to an embodiment of the present application. [Figure 9] FIG. 9 is a structural schematic diagram of the millimeter-wave antenna shown in FIG. 3h according to an embodiment of the present application. [Figure 10] FIG. 10 is a structural schematic diagram of a millimeter wave antenna according to an embodiment of the present invention. [Figure 11] FIG. 11 is a structural schematic diagram of the inverted millimeter-wave antenna shown in FIG. [Figure 12] FIG. 12 is a structural schematic diagram of a first display panel according to an embodiment of the present invention. [Figure 13] FIG. 13 is a structural schematic diagram of a second display panel according to an embodiment of the present invention. [Figure 14] FIG. 14 is a structural schematic diagram of a third display panel according to an embodiment of the present invention. [Figure 15] FIG. 15 is a structural schematic diagram of a fourth display panel according to an embodiment of the present invention. [Figure 16] FIG. 16 is a structural schematic diagram of a fifth display panel according to an embodiment of the present invention. [Figure 17] FIG. 17 is a structural schematic diagram of an LCD-integrated millimeter-wave antenna according to an embodiment of the present invention. [Figure 18] FIG. 18 is a structural schematic diagram of an OLED-integrated millimeter-wave antenna according to an embodiment of the present application. [Figure 19] FIG. 19 is a structural schematic diagram of a millimeter wave antenna located in a display area according to an embodiment of the present application. [Figure 20] FIG. 20 is a structural schematic diagram of a first display device according to an embodiment of the present application. [Figure 21] FIG. 21 is a structural schematic diagram of a second display device according to an embodiment of the present invention. [Figure 22] FIG. 22 is a top view of the display device shown in FIG. [Figure 23] FIG. 23 is a structural schematic diagram of a third display device according to an embodiment of the present invention. [Figure 24] FIG. 24 is a top view of the display device shown in FIG. DETAILED DESCRIPTION OF THE INVENTION

[0037] In order to clarify the objectives, technical solutions and advantages of the embodiments of the present application, the technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the drawings in the embodiments of the present application, but it is clear that the described embodiments are only a part of the embodiments of the present application, and are not all of the embodiments. Based on the embodiments of the present application, all other embodiments obtained by those skilled in the art without any creative efforts fall within the scope of protection of the present application.

[0038] In the drawings, the thickness of regions and layers may be exaggerated for clarity. In the drawings, the same reference numerals indicate the same or similar structures, and detailed descriptions are omitted. Furthermore, the drawings are merely schematic illustrations of the present application and are not necessarily drawn to scale.

[0039] In the examples of the present application, unless otherwise specified, "plurality" means two or more. The orientation or positional relationship indicated by the term "on" or the like is based on the orientation or positional relationship shown in the drawings, and is intended only to facilitate and simplify the explanation of the present application, and does not indicate or imply that the structures or elements shown have a particular orientation or must be configured and operated in a particular orientation, and therefore cannot be understood as limiting the present application.

[0040] Unless the context otherwise requires, throughout the specification and claims, the term "comprising" is to be interpreted in an open and inclusive sense, i.e., "including but not limited to." In the description herein, terms such as "one embodiment," "some embodiments," "exemplary embodiments," "example," "particular example," or "some examples" are intended to indicate that a particular feature, structure, material, or characteristic associated with the embodiment or example is included in at least one embodiment or example of the present application. General references to the above terms do not necessarily refer to the same embodiment or example. Furthermore, the particular feature, structure, material, or characteristic may be included in any one or more embodiments or examples in any appropriate manner.

[0041] In the examples of the present application, the use of words such as "first" and "second" to distinguish between identical or similar items that have essentially the same functions and actions is merely to clarify the technical solutions of the examples of the present application, and cannot be understood as indicating or implying the relative importance or the number of technical features shown.

[0042] Millimeter waves (mmWave) typically refer to radio waves with a frequency range of 30 to 300 GHz and a wavelength range of 1 to 10 mm. Of course, the standard mmWave frequency range can be extended to 24 to 30 GHz. mmWave has a wider bandwidth and better enables ultra-fast 5th Generation Mobile Communication Technology (5G). However, due to its short wavelength, mmWave cannot effectively penetrate some materials, such as metals. As a result, there are certain limitations to the use of mmWave, making it impossible to realize the high speeds and low latency of 5G.

[0043] Currently, Antenna-in-Package (AiP) technology integrates an antenna with an RF transceiver chip to minimize millimeter wave transmission loss. However, AiP limits the location of the antenna. For example, in related technologies, most electronic device antennas are located in the bezel area or behind the screen. As a result, in addition to the complex electromagnetic environment of the electronic device itself, signals can be blocked by the way the user holds the device during use, causing problems such as interruptions to radio wave transmission and 5G reliability.

[0044] To solve the above problems, AoD technology has emerged. Based on AiP technology, AoD technology separates the antenna from the package carrier board and moves it to the display area of ​​the screen, increasing the antenna coverage area at the expense of some loss. In AoD technology, because the antenna is located in the display area of ​​the screen, it is particularly important to ensure good antenna radiation without affecting the screen display.

[0045] Based on the above, an embodiment of the present application provides a method for manufacturing a millimeter-wave antenna, which includes the following steps S1 to S4.

[0046] S1: Provide a first substrate.

[0047] There are many types of the first substrate, and it can be selected and arranged according to actual needs. For example, the first substrate may be a rigid substrate, and materials for the rigid substrate may include, for example, glass, polycarbonate (PC), copolymers of cycloolefin (COP), polymethyl methacrylate (PMMA), polyethylene terephthalate (PET), etc. For example, the first substrate may be a flexible substrate, and materials for the flexible substrate may include, for example, polyimide (PI) and polyethylene naphthalate two-formic acid glycol ester (PEN).

[0048] The structure of the first substrate is not particularly limited. For example, other film layers may be formed directly on the first substrate, or the first substrate may include a base on which other film layers are formed directly. The specific details will be determined according to actual use.

[0049] S2: Form a confinement layer on the first substrate.

[0050] Here, the structure of the above-mentioned limiting layer is not particularly limited. For example, the above-mentioned limiting layer may be a single layer, for example, the limiting layer shown in FIG. 1 includes a first flat layer 21, or the above-mentioned limiting layer may be a multi-layer, for example, the limiting layer shown in FIG. 2 includes a first buffer layer 22, a first flat layer 21, and a mask layer 23 stacked in order. Of course, the limiting layer may further include other film layers, but the specific structure is determined according to actual use.

[0051] Here, there are no particular limitations on the manufacturing process and materials for the limiting layer, and the manufacturing process and materials for the limiting layer are all determined depending on the structure of the limiting layer.

[0052] S3: Treat the confinement layer so that it has a plurality of via holes.

[0053] The process for treating the confinement layer is not particularly limited, and may be determined according to the structure of the confinement layer. For example, as shown in FIG. 1, a photoresist 3 may be coated on the first flat layer 21, and the first flat layer 21 may be patterned using a mask plate (not shown) to form a plurality of via holes k1 in the first flat layer 21.

[0054] Here, the shape and depth of each of the above-mentioned via holes are not particularly limited, and the shape and depth of each via hole may be determined according to the process for treating the limiting layer.

[0055] S4: Form an electrode layer in each via hole of the confinement layer.

[0056] The electrode layer includes a radiation pattern and a feed line, and both the radiation pattern and the feed line include a grid-line structure.

[0057] Here, the material of the electrode layer is not particularly limited. As an example, the material of the electrode layer may be a metal material such as copper, titanium, magnesium, or the like, a glass fiber having a metal plating layer, or a resin having a surface coated with a conductive carbon material, and among these, examples of the conductive carbon material include graphene, carbon fiber, and carbon nanotube.

[0058] The process for forming the electrode layer is not particularly limited. For example, the electrode layer may be formed by processes such as electroplating or deposition. The advantages of the electroplating process will be explained below by taking metal as the material of the electrode layer. Due to the low deposition efficiency of sputtering, rapid metal growth using electroplating is necessary to achieve thick metal with a high aspect ratio and narrow line width. Because a film layer such as a confinement layer limits the electroplating area, i.e., the pre-patterned area, the electroplated metal can only grow along the interior of the via hole and not on the surface of the film layer such as a confinement layer.

[0059] The number of feeders is not particularly limited and can be determined depending on the type of millimeter-wave antenna, specific conditions, etc. For example, if the millimeter-wave antenna is a dual-polarized antenna, the number of feeders may be two, and if the millimeter-wave antenna is a non-dual-polarized antenna, the number of feeders may be one. Of course, the number of feeders may be three or more, but is determined depending on actual use.

[0060] Both the radiation pattern and the feed line include a lattice line structure, which may be a metal lattice line structure. The line width of the metal lattice lines of the radiation pattern and the feed line is not particularly limited, but as an example, the line width of the lattice lines of the radiation pattern and the feed line may be in the range of 0.5 μm to 2 μm, and more specifically, may be 0.5 μm, 0.8 μm, 1 μm, 1.5 μm, 1.7 μm, or 2 μm.

[0061] Here, the thickness of the lattice line structure is not particularly limited, but may be controlled by the thickness of the confining layer. Here, the thickness range of the lattice line structure will be described assuming that the material of the electrode layer is a metal. Considering the non-uniformity of electroplating, for example, the thickness of the electroplated metal may be 80 to 90% of the thickness of the confining layer. This is because a thin metal affects radiation efficiency, while a thick metal significantly affects transmittance. For example, the ratio of the thickness of the lattice line structure in the direction perpendicular to the first substrate to the line width of the lattice line structure may be in the range of 2 or more, and for example, the aspect ratio of the lattice line structure may be 2, 3, 4, 5, 6, or 7.

[0062] Here, the spacing between adjacent lattice lines in the lattice line structure is not particularly limited, but as an example, it may all be in the range of 20 to 250 μm, preferably 50 to 200 μm, and specifically 50 μm, 100 μm, or 200 μm.

[0063] Here, the light transmittance of the above-mentioned lattice line structure is not particularly limited, but as an example, it may all exceed 86%, for example, in the range of 86% to 92%, specifically, 86%, 87%, 88%, 89%, 90%, 91%, or 92%, etc.

[0064] The line width of the grid lines of the radiation pattern may be set smaller than the spacing between adjacent grid lines of the radiation pattern, and the thickness of the radiation pattern in a direction perpendicular to the first substrate may be set larger than the line width of the grid lines of the radiation pattern.The line width of the grid lines of the feed line may be set smaller than the spacing between adjacent grid lines of the radiation pattern, and the thickness of the feed line in a direction perpendicular to the first substrate may be set larger than the line width of the grid lines of the radiation pattern.

[0065] By configuring both the radiation pattern and the power supply line in a lattice line structure and combining it with a light-transmitting first substrate, an electrode layer with higher light transmittance can be obtained. On the other hand, by adjusting the line width and thickness of the lattice line structure, an electrode layer with a high aspect ratio can be obtained, which not only ensures antenna radiation but also further improves the light transmittance of the electrode layer without affecting the electrical characteristics of each radiation pattern, thereby improving the light transmittance of the millimeter-wave antenna and improving the usability of the millimeter-wave antenna in the display area of ​​electronic devices.

[0066] The specific line widths of the grid lines of the radiation pattern and the feeder line, the specific spacing dimensions between adjacent grid lines, and the specific thicknesses of each in the direction perpendicular to the first substrate may be the same or different.

[0067] A method for manufacturing a millimeter-wave antenna according to an embodiment of the present disclosure includes providing a first substrate, forming a confinement layer on the first substrate, processing the confinement layer to have a plurality of via holes, and forming an electrode layer in each via hole of the confinement layer, the electrode layer including a radiation pattern and a feed line, both of which have a lattice-like structure. Because the electrode layer is disposed within the via holes of the confinement layer, the thickness of the electrode layer in a direction perpendicular to the first substrate can be controlled by the thickness of the via holes of the confinement layer in a direction perpendicular to the first substrate, and the width of the electrode layer in a direction parallel to the first substrate can be controlled by the width of the via holes of the confinement layer in a direction parallel to the first substrate. This results in an electrode layer with a high aspect ratio, i.e., both the radiation pattern and the feed line of the millimeter-wave antenna have high aspect ratios, enabling the millimeter-wave antenna to radiate effectively. Furthermore, when a millimeter-wave antenna with an extremely narrow linewidth is used in an electronic device, for example, when integrated into a display device, the impact on the display function of the display device can be significantly reduced or eliminated. On the other hand, by configuring both the radiation pattern and the power supply line in a lattice line structure, the light transmittance of the electrode layer can be effectively improved, and a transparent effect with excellent light transmittance can be imparted to the entire millimeter-wave antenna, and the light transmittance can be increased to a range of 86 to 92%, which is advantageous for use in display devices.

[0068] Optionally, S2 forming the confinement layer on the first substrate comprises S21.

[0069] S21: Form at least a first planar layer on a first substrate.

[0070] Forming at least a first flat layer on the first substrate means, as shown in FIG. 1, forming only a first flat layer 21 on the first substrate 1, or forming other film layers, such as a first buffer layer and a mask layer shown in FIGS. 2 to 4, in addition to the first flat layer on the first substrate, but is not limited thereto.

[0071] S3, which processes the confinement layer so that the confinement layer has a plurality of via holes, includes S31.

[0072] S31: Treat at least a first planar layer such that the first planar layer has a plurality of via holes.

[0073] The above-mentioned treatment of at least the first planar layer so that the first planar layer has a plurality of via holes means, but is not limited to, treating only the first planar layer so that the first planar layer has a plurality of via holes, or treating only the first planar layer so that the first planar layer has a plurality of via holes, and also treating other film layers so that the first planar layer and other film layers all have a plurality of via holes.

[0074] S4, which forms an electrode layer in each via hole of the confinement layer, includes S41.

[0075] S41: An electrode layer is formed in at least each via hole of the first flat layer.

[0076] The above-mentioned formation of an electrode layer in each via hole of at least the first flat layer means, but is not limited to, forming an electrode layer only in each via hole of the first flat layer, or forming an electrode layer in each via hole of the first flat layer and another film layer.

[0077] In a method for manufacturing a millimeter-wave antenna according to an embodiment of the present application, an electrode layer is formed in at least each via hole of the first flat layer, and the thickness of at least the electrode layer in a direction perpendicular to the first substrate is controlled by the thickness of the via hole of the first flat layer in the direction perpendicular to the first substrate, and the width of at least the electrode layer in a direction parallel to the first substrate may be controlled by the width of the via hole of the first flat layer in the direction parallel to the first substrate, thereby obtaining an electrode layer with a high aspect ratio, i.e., both the radiation pattern and the feed line of the millimeter-wave antenna have high aspect ratios, allowing the millimeter-wave antenna to radiate effectively. Furthermore, when a millimeter-wave antenna with an extremely narrow linewidth is used in an electronic device, for example, when integrated into a display device, the impact on the display function of the display device can be significantly reduced or eliminated.

[0078] Optionally, S21 forming at least a first planar layer on the first substrate includes S211.

[0079] S211: As shown in FIG. 1d, a first flat layer 21 is formed on the first substrate 1.

[0080] The material of the first planar layer is not particularly limited, but may include, for example, a high-temperature stable photoresist (referred to as photoetching, OC), which also has a transmittance of 90% or more. For example, the material of the first planar layer may include a highly transparent photoresist or an organic material.

[0081] Here, the manufacturing process of the first planar layer is not particularly limited. As an example, the first planar layer may be formed by depositing a transparent photoresist on the first substrate through a deposition process.

[0082] Conventional antennas have poor structural stability when the aspect ratio is high. For example, when the aspect ratio is high, the metal material of the electrode layer has a limited contact area between the metal and the base, resulting in a high center of gravity, which makes the antenna prone to collapse and breakage. This leads to poor wet etching uniformity and low antenna yield. Therefore, to achieve a transparent antenna with a high aspect ratio, it is necessary to strengthen the metal grid lines of the electrode layer. The first planarization layer improves wet etching uniformity and ensures that the electroplated metal grows in a predetermined direction. Therefore, the width and thickness of the millimeter-wave antenna according to the present embodiment may be controlled by the first planarization layer.

[0083] S31 treating at least the first planar layer such that the first planar layer has a plurality of via holes includes S311.

[0084] S311: As shown in FIG. 1e, the first flat layer 21 is processed so that the first flat layer 21 has a plurality of via holes k1.

[0085] S41, which forms an electrode layer in each via hole of at least the first flat layer, includes S411.

[0086] S411: As shown in FIG. 1f, an electrode layer 4 is formed in each via hole of the first flat layer 21.

[0087] The process for forming the electrode layer in each via hole of the first flat layer is not particularly limited, but as an example, the electrode layer may be formed in each via hole of the first flat layer by an electroplating process.

[0088] In a method for manufacturing a millimeter-wave antenna according to an embodiment of the present application, an electrode layer is formed in each via hole of the first flat layer, and the thickness of the electrode layer in a direction perpendicular to the first substrate is controlled by the thickness of the via hole in the first flat layer in a direction perpendicular to the first substrate, and the width of the electrode layer in a direction parallel to the first substrate may be controlled by the width of the via hole in the first flat layer in a direction parallel to the first substrate, thereby obtaining an electrode layer with a high aspect ratio, i.e., both the radiation pattern and the feed line of the millimeter-wave antenna have high aspect ratios, allowing the millimeter-wave antenna to radiate effectively. Furthermore, when a millimeter-wave antenna with an extremely narrow linewidth is used in an electronic device, for example, when integrated into a display device, the impact on the display function of the display device can be significantly reduced or eliminated.

[0089] Optionally, S21 of forming at least a first flat layer on the first substrate includes the following steps S212 to S214.

[0090] S212: As shown in FIG. 2d, a first buffer layer 22 is formed on the first substrate 1.

[0091] Here, the material of the first buffer layer is not particularly limited, but may include, for example, silicon nitride (SiN), silicon oxide (SiO), silicon oxynitride (SiON), a stack of silicon nitride and silicon oxide (two or more layers of SiN / SiO), etc.

[0092] Here, the manufacturing process of the first buffer layer is not particularly limited, but as an example, the first buffer layer may be manufactured by a plasma enhanced chemical vapor deposition (PECVD) method, a deposition process, or the like.

[0093] Before depositing the material for the first buffer layer on the first substrate, the first substrate may be surface-treated with ammonia gas (NH3). Of course, if there is another film layer between the first substrate and the first buffer layer, the film layer in contact with the first buffer layer may be surface-treated with ammonia gas before depositing the material for the first buffer layer.

[0094] S213: As shown in FIG. 2e, a first planar layer 21 is formed on the first buffer layer 22.

[0095] S214: As shown in FIG. 2f, a mask layer 23 is formed on the first planar layer 21.

[0096] Here, the material of the mask layer is not particularly limited, and may include, for example, metals such as indium tin oxide (ITO), molybdenum (Mo), molybdenum / aluminum / molybdenum (Mo / Al / Mo), titanium / aluminum / titanium (Ti / Al / Ti), etc. For example, the material of the mask layer may include non-metals such as organic materials.

[0097] Here, the manufacturing process of the mask layer is not particularly limited, but as an example, the mask layer may be manufactured by a deposition process.

[0098] Treating at least the first planar layer S31 such that the first planar layer has a plurality of via holes includes S312.

[0099] S312: At least two of the first buffer layer, the first planar layer, and the mask layer are processed simultaneously, so that each of the first buffer layer, the first planar layer, and the mask layer has a plurality of via holes.

[0100] The above phrase "simultaneously processing at least two of the first buffer layer, the first planar layer, and the mask layer so that each of them has a plurality of via holes" means simultaneously processing two of the first buffer layer, the first planar layer, and the mask layer so that each of them has a plurality of via holes, or simultaneously processing two of the first buffer layer, the first planar layer, and the mask layer, and also processing three of these two and another film layer, such as the mask layer, so that each of them has a plurality of via holes.

[0101] S41, which forms an electrode layer in each via hole of at least the first flat layer, includes S412.

[0102] S412: An electrode layer is formed at least in each via hole of the first buffer layer and in each via hole of the first flat layer.

[0103] In a method for manufacturing a millimeter-wave antenna according to an embodiment of the present application, an electrode layer is formed at least in each via hole of the first buffer layer and each via hole of the first flat layer. The thickness of the electrode layer in a direction perpendicular to the first substrate is controlled by the thickness of the via holes in the first buffer layer and the first flat layer in a direction perpendicular to the first substrate. The width of the electrode layer in a direction parallel to the first substrate may be controlled by the width of the via holes in the first buffer layer and the first flat layer in a direction parallel to the first substrate. This results in an electrode layer with a high aspect ratio, i.e., both the radiation pattern and the feed line of the millimeter-wave antenna have high aspect ratios, enabling the millimeter-wave antenna to radiate effectively. Furthermore, when a millimeter-wave antenna with an extremely narrow linewidth is used in an electronic device, for example, when integrated into a display device, the impact on the display function of the display device can be significantly reduced or eliminated. Furthermore, the first buffer layer can improve adhesion between the electrode layer and a subsequent film layer.

[0104] Optionally, S312 includes S3121, which simultaneously processes at least two of the first buffer layer, the first planar layer, and the mask layer, such that the first buffer layer, the first planar layer, and the mask layer all have a plurality of via holes.

[0105] S3121: As shown in FIG. 2h, the mask layer 23, the first flat layer 21, and the first buffer layer 22 are sequentially processed so that each of the mask layer 23, the first flat layer 21, and the first buffer layer 22 has a plurality of via holes k2.

[0106] The process for sequentially processing the mask layer, first planar layer, and first buffer layer is not particularly limited. For example, the mask layer, first planar layer, and first buffer layer may be sequentially processed using dry etching. Specifically, the same equipment may be used for dry etching the mask layer, first planar layer, and first buffer layer. The etching time may be proportional to the thickness of each film layer. For example, for a 1000 Å first buffer layer, a 4 μm first planar layer, and a 2000 Å mask layer, the etching times may be 30 s, 110 s, and 80 s. The etching time may be adjusted depending on the equipment and the thickness of each film layer. Due to etching non-uniformity, the etching time for the first buffer layer may be appropriately shortened. To prevent excessive etching of the film layer between the first buffer layer and the first substrate, the first buffer layer may not be completely etched. For example, if the time required to completely etch a 1000 Å first buffer layer is 40 s, the first buffer layer may be etched for 30 s as long as it is etched completely through, and the remaining unetched material of the first buffer layer will not affect subsequent processes.

[0107] Here, the etching process is not particularly limited, and may include, for example, reactive ion etching, inductively coupled plasma etching (ICP), etc. Because reactive ion etching is isotropic etching, as the etching time increases, some side etching occurs, forming a trapezoidal lattice line structure that is wide at the top and narrow at the bottom, with an inclination angle of the trapezoid of approximately 78°. Inductively coupled plasma etching can etch rectangular grooves with an inclination angle of approximately 90°. All of Figures 1 to 4 show an example in which the via hole is a rectangular groove.

[0108] S412, which forms an electrode layer at least in each via hole of the first buffer layer and in each via hole of the first planar layer, includes S4121.

[0109] S4121: As shown in FIG. 2i, an electrode layer 4 is formed in each via hole of the mask layer 23, in each via hole of the first flat layer 21, and in each via hole of the first buffer layer 22.

[0110] Here, the process for forming the electrode layer in each via hole of the mask layer, each via hole of the first flat layer, and each via hole of the first buffer layer is not particularly limited, but as an example, the electrode layer may be formed in each via hole of the mask layer, each via hole of the first flat layer, and each via hole of the first buffer layer by an electroplating process.

[0111] Instead of providing the mask layer, an additional reticle may be used to pattern the first planar layer and the first buffer layer.

[0112] In a method for manufacturing a millimeter-wave antenna according to an embodiment of the present application, an electrode layer is formed at least in each via hole of the first buffer layer and each via hole of the first planar layer. The thickness of the electrode layer in a direction perpendicular to the first substrate can be controlled by the thickness of the via holes in the first buffer layer and the first planar layer in a direction perpendicular to the first substrate, and the width of the electrode layer in a direction parallel to the first substrate can be controlled by the width of the via holes in the first buffer layer and the first planar layer in a direction parallel to the first substrate. This results in an electrode layer with a high aspect ratio, i.e., both the radiation pattern and the feed line of the millimeter-wave antenna have a high aspect ratio, enabling the millimeter-wave antenna to radiate effectively. Furthermore, when a millimeter-wave antenna with an extremely narrow linewidth is used in an electronic device, for example, when integrated into a display device, the impact on the display function of the display device can be significantly reduced or eliminated. Meanwhile, the first buffer layer can improve adhesion between the electrode layer and the subsequent film layer and prevent excessive etching of the film layer before the electrode layer. Furthermore, the mask layer primarily functions as a reticle, enabling film layer patterning without the need for an additional reticle.

[0113] Optionally, the material of the mask layer comprises a non-metal.

[0114] Here, the non-metal is not particularly limited, but as an example, the non-metal may include an organic material.

[0115] In the method for manufacturing a millimeter-wave antenna according to the embodiment of the present application, the first buffer layer, the first planar layer, and the mask layer are all made of organic materials, and therefore can be etched by the same equipment. Furthermore, when an electrode layer is deposited in the patterned via holes of the first buffer layer, the first planar layer, and the mask layer, the electrode layer may be deposited only in the via holes, rather than on the surfaces of the first buffer layer, the first planar layer, and the mask layer, thereby reliably obtaining the patterned structure of the antenna.

[0116] Optionally, S312 of simultaneously processing at least two of the first buffer layer, the first planar layer, and the mask layer, such that each of the first buffer layer, the first planar layer, and the mask layer has a plurality of via holes, includes the following steps S3122 and S3123.

[0117] S3122: As shown in FIG. 3h, the mask layer 23 is processed so that the mask layer 23 has a plurality of via holes k3.

[0118] Here, the material of the mask layer is not particularly limited, but may include, for example, metals such as indium tin oxide (ITO), molybdenum (Mo), molybdenum / aluminum / molybdenum (Mo / Al / Mo), titanium / aluminum / titanium (Ti / Al / Ti), etc. The metal mask layer used here functions as a hard mask.

[0119] The process for treating the mask layer is not particularly limited. For example, the mask layer may be treated using wet etching. Specifically, because the metal mask layer functions as a hard mask, to ensure the etching linewidth accuracy and reduce overetching, a photoresist 3 must be coated on the mask layer 23, the mask layer 23 must be patterned, and most of the metal region must be etched away, as shown in FIGS. 3g and 3h. In this case, the etching time may be longer. For example, if it takes 90 seconds to completely etch away a 3000 Å thick mask layer 23 (made of Mo / Al / Mo), the etching time may be longer than 90 seconds, and overetching may occur.

[0120] S3123: As shown in FIG. 3i, the first flat layer 21 and the first buffer layer 22 are processed in sequence so that both the first flat layer 21 and the first buffer layer 22 have a plurality of via holes k4.

[0121] The process for sequentially processing the first planar layer and the first buffer layer is not particularly limited. For example, the first planar layer and the first buffer layer may be processed using dry etching or wet etching. Specifically, as shown in FIG. 3i, the first planar layer 21 and the first buffer layer 22 are first processed using dry etching. Next, as shown in FIG. 3j, photoresist 3 is coated in the via holes of the dry-etched first planar layer 21 and the first buffer layer 22. Using a metal hard mask as a reticle, the first planar layer 21 and the first buffer layer 22 are wet-etched. The hard mask is first patterned and then removed by etching using tetrafluoromethane (CF4). The gas component is then changed to oxygen (O2) to etch the photoresist of the first planar layer and the first buffer layer. Because O2 cannot etch the hard mask, the etched areas of the first planar layer and the first buffer layer become the patterned areas of the hard mask. Since the large area metal is used as a hard mask, the mask layer is not etched, and therefore, to avoid wet etching affecting the line width of the grating line structure, the etching time may be as short as possible, for example, 60 s.

[0122] S412 for forming an electrode layer at least in each via hole of the first buffer layer and each via hole of the first flat layer includes the following S4122 and S4123.

[0123] S4122: Remove the mask layer, as shown in Figure 3k.

[0124] The process for removing the mask layer is not particularly limited, but may be, for example, wet etching to remove the mask layer, where the first substrate in the via hole and other film layers between the first substrate and the first buffer layer are retained by the protection of the first planar layer and the first buffer layer by the photoresist in the via hole, and the metal hard mask outside the via hole is removed by etching.

[0125] S4123: As shown in FIG. 3l, an electrode layer 4 is formed in each via hole of the first flat layer 21 and in each via hole of the first buffer layer 22.

[0126] Here, the process for forming the electrode layer in each via hole of the first flat layer and each via hole of the first buffer layer is not particularly limited, but as an example, the electrode layer may be formed by an electroplating process.

[0127] The thickness of the electrode layer in a direction perpendicular to the first substrate may be limited by the first planar layer and the second buffer layer.

[0128] In a method for manufacturing a millimeter-wave antenna according to an embodiment of the present disclosure, a mask layer is first etched by wet etching, and then the first planar layer and the first buffer layer are wet-etched using a metal hard mask as a reticle. When a metal hard mask is used as a mask for etching the first planar layer and the first buffer layer, the metal hard mask must be removed by etching before electroplating the electrode layer to prevent the metal hard mask from affecting the subsequent electroplating of the electrode layer. Furthermore, the etched first substrate in the via hole and other film layers between the first substrate and the first buffer layer must be protected, and the photoresist in the via hole must be retained through exposure. Since no photoresist remains outside the via hole, the electrode layer can be successfully formed in the via hole of the first planar layer and the first buffer layer.

[0129] Optionally, S312 of simultaneously processing at least two of the first buffer layer, the first planar layer, and the mask layer, such that each of the first buffer layer, the first planar layer, and the mask layer has a plurality of via holes, includes S3124.

[0130] S3124: As shown in FIG. 4h, the mask layer 23, the first flat layer 21, and the first buffer layer 22 are processed in sequence so that the mask layer 23, the first flat layer 21, and the first buffer layer 22 each have a plurality of via holes k5.

[0131] Here, the process of sequentially processing the mask layer, first flat layer, and first buffer layer is not particularly limited, but as an example, the mask layer, first flat layer, and first buffer layer may be sequentially processed using dry etching.

[0132] Dry etching of metal materials is also possible, but unlike dry etching of organic materials, dry etching of metal materials requires a separate chamber and is limited to certain metal materials, such as molybdenum (Mo) and titanium / aluminum / titanium (Ti / Al / Ti). In dry etching, first, the metal hard mask is etched in the metal chamber, and then the first planar layer and first buffer layer are etched in the organic chamber.

[0133] S412 for forming an electrode layer at least in each via hole of the first buffer layer and in each via hole of the first flat layer includes the following S4124 and S4125.

[0134] S4124, remove the mask layer 23, as shown in FIG. 4j.

[0135] The process for removing the mask layer is not particularly limited, but may be, for example, wet etching to remove the mask layer, where the first substrate in the via hole and other film layers between the first substrate and the first buffer layer are retained by the protection of the photoresist in the first planar layer and the first buffer layer, and the metal hard mask outside the via hole is removed by etching.

[0136] S4125: As shown in FIG. 4k, an electrode layer 4 is formed in each via hole of the first flat layer 21 and in each via hole of the first buffer layer 22.

[0137] Here, the process for forming the electrode layer in each via hole of the first flat layer and each via hole of the first buffer layer is not particularly limited, but as an example, the electrode layer may be formed by an electroplating process.

[0138] The thickness of the electrode layer in a direction perpendicular to the first substrate may be limited by the first planar layer and the second buffer layer.

[0139] In a method for manufacturing a millimeter-wave antenna according to an embodiment of the present invention, the etching mask layer, first planar layer, and first buffer layer are first simultaneously etched by dry etching, and then the first planar layer and first buffer layer are wet-etched using a metal hard mask as a reticle. To prevent the metal hard mask from affecting the subsequent electroplating of an electrode layer, the metal hard mask must be removed by etching before electroplating the electrode layer. Furthermore, the etched first substrate in the via hole and other film layers between the first substrate and the first buffer layer must be protected, and the photoresist in the via hole must be retained through exposure. Because no photoresist remains outside the via hole, the electrode layer is successfully formed in the via hole in the first planar layer and the first buffer layer.

[0140] Optionally, the material of the mask layer comprises a metal.

[0141] Here, the metal is not particularly limited, but may include, for example, ITO, molybdenum (Mo), molybdenum / aluminum / molybdenum (Mo / Al / Mo), titanium / aluminum / titanium (Ti / Al / Ti), etc.

[0142] Here, the manufacturing process of the mask layer is not particularly limited, but as an example, the metal mask layer may be patterned by dry etching, or the metal mask layer may be patterned by wet etching.

[0143] In the method for manufacturing a millimeter-wave antenna according to the embodiment of the present application, a metal hard mask is used as a reticle to pattern the first planar layer and the first buffer layer, and the metal hard mask must be removed before electroplating the electrode layer to avoid the influence of the metal hard mask on the subsequent electroplating of the electrode layer.

[0144] Optionally, after S1 of providing a first substrate and before S2 of forming a confinement layer on the first substrate, the manufacturing method further comprises S5.

[0145] S5: As shown in FIGS. 1 to 4, a surface seed layer 6 is formed on the first substrate 1.

[0146] The material of the surface seed layer is not particularly limited, but may include, for example, metals, metal alloys, metal oxides, etc., such as copper (Cu), silver (Ag), molybdenum-copper alloy (Mo / Cu), indium tin oxide-silver alloy (ITO / Ag), etc., as long as they can be electroplated. As a further example, the material of the surface seed layer may be copper or silver.

[0147] The manufacturing process of the surface seed layer is not particularly limited, but as an example, the surface seed layer may be formed by sputtering. Note that the surface seed layer may not be provided, but in this case, the manufacturing process of the electrode layer needs to be changed.

[0148] In the method of manufacturing a millimeter-wave antenna according to an embodiment of the present application, forming a surface seed layer before forming the confinement layer is advantageous for the subsequent fabrication of the confinement layer, particularly for the subsequent electroplating of a thicker electrode layer metal.

[0149] Optionally, after S4 of forming an electrode layer in each via hole of the confinement layer, the manufacturing method further includes S6.

[0150] S6: As shown in FIGS. 1 to 4, the second flat layer 7 is formed on the electrode layer 4.

[0151] Here, the material of the second planar layer is not particularly limited, but as an example, the material of the second planar layer may include a high-temperature stable photoresist (OC).

[0152] In the method for manufacturing a millimeter-wave antenna according to the embodiment of the present application, a leveling effect can be achieved by forming a second planar layer on the electrode layer. Due to non-uniformity in the electrolytic plating of the metal of the electrode layer, some via holes are not filled sufficiently, and the metal surface of the electrode layer after electrolytic plating becomes uneven. Therefore, it is necessary to apply a second planar layer to flatten the metal surface again so that the shape of the metal surface of the electrode layer does not affect the transmittance.

[0153] Optionally, after S6 of forming a second planar layer on the electrode layer, the manufacturing method further includes S7.

[0154] S7: As shown in FIGS. 1 to 4, a second substrate 8 is formed on the second flat layer .

[0155] Here, the material of the second substrate is not particularly limited, but may include, for example, rigid materials such as glass, COP, and PET, or flexible materials such as PI, TAC (triacetate cellulose), and TPU (polyurethane elastomer).

[0156] In the method for manufacturing a millimeter-wave antenna according to the embodiment of the present application, a second substrate is formed on the second flat layer, that is, a film is coated on the second flat layer, so that the second substrate functions as a carrier.

[0157] Optionally, after S1 of providing a first substrate and before S5 of forming a surface seed layer on the first substrate, the manufacturing method further includes S8.

[0158] S8: As shown in FIGS. 1 to 4, a release layer 5 is formed on the first substrate 1.

[0159] Here, the material of the release layer is not particularly limited, but may include, for example, a material having high temperature stability such as an ethylene glycol monobutyl ether-based material, or a polymer material having high temperature stability (above 230°C) such as polyurethane or polyacrylic-based material.

[0160] Here, the manufacturing process of the release layer is not particularly limited, but as an example, the release layer may be formed using a coating process.

[0161] After S7 of forming a second substrate on the second planar layer, the manufacturing method further includes S9.

[0162] S9: As shown in FIGS. 1 to 4, the release layer 5 and the first substrate 1 are removed.

[0163] Here, the process for removing the release layer and the first substrate is not particularly limited, but as an example, the release layer and the first substrate may be removed by mechanical sintering or laser sintering.

[0164] In the method for manufacturing a millimeter-wave antenna according to the embodiment of the present application, the release layer is easily removed and separated from the first substrate.

[0165] The first substrate does not have to be removed. In this case, there is no need to provide a release layer between the first substrate and the other film layer. If the first substrate is not removed, a first protective layer may be formed on the side of the first substrate away from the other film layer.

[0166] Optionally, after S9 of removing the release layer and the first substrate, the manufacturing method includes: As shown in FIGS. 1 to 4, the method further includes step S10 of removing the surface seed layer 6.

[0167] Here, the process for removing the surface seed layer is not particularly limited, but as an example, the surface seed layer may be removed using an etching process.

[0168] In the manufacturing method of the millimeter-wave antenna according to the embodiment of the present application, electroplating is used on the surface, so after removing the release layer and the first substrate, the surface seed layer must be etched once to remove the opaque and conductive surface seed layer, thereby obtaining a transparent antenna with high transparency, a high aspect ratio, and a narrow line width.

[0169] Optionally, after forming the second substrate on the second planar layer, the manufacturing method further comprises: As shown in FIGS. 1 to 4, the method further includes forming a second protective layer 9 on the second substrate 8, S11.

[0170] In the method for manufacturing a millimeter-wave antenna according to the embodiment of the present application, the transparent antenna having high transparency, a high aspect ratio, and a narrow line width can be protected by a second protective layer.

[0171] In order to firmly adhere the film layers, adhesive layers (not shown in FIGS. 1 to 4) must be added between the first flat layer, the second flat layer, the second substrate, and other layers. The material of the adhesive layer is not particularly limited, but may include, for example, a highly transparent adhesive such as an optically clear adhesive (OCA), polymethyl methacrylate (PMMA), or a pressure-sensitive adhesive (PSA).

[0172] In manufacturing a millimeter-wave antenna, the last remaining film layer must be a transparent film layer in order to properly apply the millimeter-wave antenna to the display area of ​​the electronic device and minimize or even eliminate any impact on the display effect of the electronic device, but there is no limitation as to whether the other film layers are transparent or not.

[0173] Hereinafter, referring to FIG. 1, a method for manufacturing a first millimeter-wave antenna will be provided.

[0174] S0011: As shown in FIG. 1a, provide a first substrate 1.

[0175] S0012: As shown in FIG. 1b, ethylene glycol monobutyl ether is applied onto the first substrate 1 to form a release layer 5.

[0176] S0013: As shown in FIG. 1c, Cu is sputtered onto the release layer 5 to form a surface seed layer 6.

[0177] S0014: As shown in FIG. 1d, a transparent photoresist is deposited on the surface seed layer 6 to form a first flat layer 21, and a photoresist 3 is coated on the first flat layer 21.

[0178] S0015: As shown in FIG. 1e, the first flat layer 21 is patterned to form a via hole k1 in the first flat layer 21.

[0179] S0016: As shown in FIG. 1f, metal is electroplated into the via holes k1 of the first flat layer 21 to form the electrode layer 4.

[0180] S0017: As shown in FIG. 1g, the electrode layer 4 is leveled to form a second flat layer 7 on the electrode layer 4.

[0181] S0018: As shown in FIG. 1h, a film PI is coated on the second flat layer 7 to form a second substrate 8.

[0182] S0019: As shown in FIG. 1i, a second protective layer 9 is formed on a second substrate 8.

[0183] S0020: As shown in FIG. 1j, the surface seed layer 6 and the release layer 5 are peeled off by laser sintering.

[0184] S0021: As shown in FIG. 1k, the surface seed layer 6 is removed by etching to obtain a millimeter wave antenna.

[0185] The millimeter-wave antenna may further include a first flat layer, an electrode layer, and a second flat layer, or may further include a first flat layer, an electrode layer, a second flat layer, and a second substrate, but is not particularly limited thereto.

[0186] In Figure 2 below, a method for manufacturing a second millimeter wave antenna is provided.

[0187] S0031: As shown in Figure 2a, provide a first substrate 1.

[0188] S0032: As shown in FIG. 2b, ethylene glycol monobutyl ether is applied onto the first substrate 1 to form a release layer 5.

[0189] S0033: As shown in FIG. 2c, Ag is deposited on the release layer 5 to form a surface seed layer 6.

[0190] S0034: As shown in FIG. 2d, silicon nitride is deposited on the surface seed layer 6 by PECVD to form a first buffer layer 22.

[0191] Figure 5 below shows the structure of an antenna without a first buffer layer, where the dotted lines indicate via holes. Figure 6 shows the structure of an antenna with a first buffer layer. The first buffer layer prevents the underlying metal from being etched by oxygen. Without the silicon nitride first buffer layer, the surface seed layer, whether copper or silver, will oxidize to varying degrees. As shown by the dotted lines in Figure 5, oxidation of the copper seed layer results in a porous surface, reducing interfacial adhesion and making it prone to peeling during subsequent processing. A silver seed layer does not form the porous structure shown by the dotted lines in Figure 5, but some of the silver becomes non-conductive due to severe oxidation.

[0192] S0035: A transparent photoresist is deposited on the first buffer layer 22 to form a first flat layer 21, as shown in FIG. 2e.

[0193] S0036: As shown in FIG. 2f, an organic material is deposited on the first planar layer 21 to form a mask layer 23.

[0194] S0037: Coat photoresist 3 on the mask layer 23, as shown in Figure 2g.

[0195] S0038: As shown in FIG. 2h, the mask layer 23 is dry-etched using CF4, and then the first flat layer 21 and the first buffer layer 22 are dry-etched using O2 to form via holes k2 in the mask layer 23, the first flat layer 21, and the first buffer layer 22.

[0196] S0039: As shown in FIG. 2i, metal is electroplated into the via holes k2 of the mask layer 23, the first flat layer 21, and the first buffer layer 22 to form the electrode layer 4.

[0197] FIG. 7 is a structural diagram of the antenna formed in step S0039 above, and FIG. 8 is a schematic diagram of the metal grid structure.

[0198] S0040: As shown in FIG. 2j, the electrode layer 4 is leveled to form a second flat layer 7 on the electrode layer 4.

[0199] S0041: As shown in FIG. 2k, a film PI is coated on the second flat layer 7 to form a second substrate 8.

[0200] S0042: As shown in FIG. 2l, a second protective layer 9 is formed on the second substrate 8.

[0201] S0043: As shown in FIG. 2m, the surface seed layer 6 and the release layer 5 are peeled off by laser sintering.

[0202] S0044: As shown in FIG. 2n, the surface seed layer 6 is removed by etching to obtain a millimeter wave antenna.

[0203] The millimeter-wave antenna may further include a first buffer layer, a first flat layer, a mask layer, an electrode layer, and a second flat layer, or may further include a first buffer layer, a first flat layer, a mask layer, an electrode layer, a second flat layer, and a second substrate, but is not particularly limited thereto.

[0204] Below, in FIG. 3, a manufacturing method of a third millimeter-wave antenna is provided.

[0205] S0051: As shown in Figure 3a, provide a first substrate 1.

[0206] S0052: As shown in FIG. 3b, ethylene glycol monobutyl ether is applied onto the first substrate 1 to form a release layer 5.

[0207] S0053: As shown in FIG. 3c, a metal is deposited on the release layer 5 to form a surface seed layer 6.

[0208] S0054: As shown in FIG. 3d, silicon nitride is deposited on the surface seed layer 6 by PECVD to form a first buffer layer 22.

[0209] S0055: A transparent photoresist is deposited on the first buffer layer 22 to form a first flat layer 21, as shown in FIG. 3e.

[0210] S0056: As shown in FIG. 3f, metal is deposited on the first planar layer 21 to form a mask layer 23.

[0211] S0057: Coat photoresist 3 on the mask layer 23, as shown in Figure 3g.

[0212] S0058: As shown in FIG. 3h, the mask layer 23 is wet-etched to form a via hole k3 in the mask layer 23.

[0213] FIG. 9 is a structural diagram of the antenna formed in step S0058.

[0214] S0059: As shown in FIG. 3i, the first flat layer 21 and the first buffer layer 22 are dry-etched to form via holes k4 in the first flat layer 21 and the first buffer layer 22.

[0215] S0060: As shown in FIG. 3j, photoresist 3 is coated in the via holes of the first flat layer 21 and the first buffer layer 22.

[0216] S0061: As shown in FIG. 3k, the first flat layer 21 and the first buffer layer 22 are wet-etched to form via holes in the first flat layer 21 and the first buffer layer 22.

[0217] S0062: As shown in FIG. 3l, metal is electroplated into the via holes of the first flat layer 21 and the first buffer layer 22 to form the electrode layer 4.

[0218] S0063: As shown in FIG. 3m, the electrode layer 4 is leveled to form a second flat layer 7 on the electrode layer 4.

[0219] S0064: As shown in FIG. 3n, a film PI is coated on the second flat layer 7 to form a second substrate 8.

[0220] S0065: As shown in FIG. 3o, a second protective layer 9 is formed on the second substrate 8.

[0221] S0066: As shown in FIG. 3p, the surface seed layer 6 and the release layer 5 are peeled off by laser sintering.

[0222] S0067: As shown in FIG. 3q, the surface seed layer 6 is removed by etching to obtain a millimeter wave antenna.

[0223] The millimeter-wave antenna may further include a first buffer layer, a first planar layer, an electrode layer, and a second planar layer, or may further include a first buffer layer, a first planar layer, an electrode layer, a second planar layer, and a second substrate, but is not limited thereto.

[0224] Below, in FIG. 4, a fourth millimeter wave antenna manufacturing method is provided.

[0225] S0071: As shown in Figure 4a, provide a first substrate 1.

[0226] S0072: As shown in FIG. 4b, ethylene glycol monobutyl ether is applied onto the first substrate 1 to form a release layer 5.

[0227] S0073: As shown in FIG. 4c, metal is deposited on the release layer 5 to form a surface seed layer 6.

[0228] S0074: As shown in FIG. 4d, silicon nitride is deposited on the surface seed layer 6 by PECVD to form a first buffer layer 22.

[0229] S0075: A transparent photoresist is deposited on the first buffer layer 22 to form a first flat layer 21, as shown in FIG. 4e.

[0230] S0076: As shown in FIG. 4f, metal is deposited on the first planar layer 21 to form a mask layer 23.

[0231] S0077: Coat photoresist 3 on the mask layer 23, as shown in Figure 4g.

[0232] S0078: As shown in FIG. 4h, the mask layer 23, the first flat layer 21, and the first buffer layer 22 are dry-etched to form via holes k5 in the mask layer 23, the first flat layer 21, and the first buffer layer 22.

[0233] S0079: As shown in FIG. 4i, photoresist 3 is coated in the via holes of the first flat layer 21 and the first buffer layer 22.

[0234] S0080: As shown in FIG. 4j, the first flat layer 21 and the first buffer layer 22 are wet-etched to form via holes in the first flat layer 21 and the first buffer layer 22, and the mask layer 23 is removed.

[0235] S0081: As shown in FIG. 4k, metal is electroplated into the via holes of the first flat layer 21 and the first buffer layer 22 to form the electrode layer 4.

[0236] S0082: As shown in FIG. 4l, the electrode layer 4 is leveled to form a second flat layer 7 on the electrode layer 4.

[0237] S0083: As shown in FIG. 4m, a film PI is coated on the second flat layer 7 to form a second substrate 8.

[0238] S0084: As shown in FIG. 4n, a second protective layer 9 is formed on the second substrate 8.

[0239] S0085: As shown in FIG. 4o, a second protective layer 9 is formed on the second substrate 8.

[0240] S0086: As shown in FIG. 4p, the surface seed layer 6 is removed by etching to obtain a millimeter wave antenna.

[0241] In addition, the millimeter-wave antenna may further include a first buffer layer, a first planar layer, an electrode layer, and a second planar layer, or may further include a first buffer layer, a first planar layer, an electrode layer, a second planar layer, and a second substrate, and is not limited thereto.

[0242] An embodiment of the present application also provides a millimeter-wave antenna, as shown in FIG. 10, which includes a first substrate 1, a confinement layer 2, and an electrode layer 4 and is manufactured by the above-described method for manufacturing a millimeter-wave antenna.

[0243] There are many types of the first substrate, and it can be selected and arranged according to actual needs. For example, the first substrate may be a rigid substrate, and materials for the rigid substrate may include, for example, glass, polycarbonate (PC), copolymers of cycloolefin (COP), polymethyl methacrylate (PMMA), polyethylene terephthalate (PET), etc. For example, the first substrate may be a flexible substrate, and materials for the flexible substrate may include, for example, polyimide (PI) and polyethylene naphthalate two-formic acid glycol ester (PEN).

[0244] The structure of the first substrate is not particularly limited. For example, other film layers may be formed directly on the first substrate, or the first substrate may include a base on which other film layers are formed directly. The specific details will be determined according to actual use.

[0245] The confinement layer 2 is provided on the first substrate 1 and has a plurality of via holes.

[0246] Here, the structure of the above-mentioned limiting layer is not particularly limited, but as an example, it may be a single layer, for example, the limiting layer shown in FIG. 1 includes a first flat layer 21, or the above-mentioned limiting layer may be a multi-layer, for example, the limiting layer shown in FIG. 2 includes a first buffer layer 22, a first flat layer 21, and a mask layer 23 stacked in order, and of course, it may further include other film layers, but the specifics will be determined according to actual use.

[0247] The electrode layer 4 is disposed in each via hole of the confinement layer 2 and includes a radiation pattern and a feed line, both of which include a grid-line structure.

[0248] Here, the material of the electrode layer is not particularly limited. As an example, the material of the electrode layer may be a metal material such as copper, titanium, magnesium, or the like, a glass fiber having a metal plating layer, or a resin having a surface coated with a conductive carbon material, and among these, examples of the conductive carbon material include graphene, carbon fiber, and carbon nanotube.

[0249] The number of feeders is not particularly limited and can be determined depending on the type of millimeter-wave antenna, specific conditions, etc. For example, if the millimeter-wave antenna is a dual-polarized antenna, the number of feeders may be two, and if the millimeter-wave antenna is a non-dual-polarized antenna, the number of feeders may be one. Of course, the number of feeders may be three or more, but is determined depending on actual use.

[0250] Both the radiation pattern and the feed line include a lattice line structure, which may be a metal lattice line structure as shown in Fig. 12. Here, the line width of the metal lattice lines of the radiation pattern and the feed line is not particularly limited, but as an example, the line width of the lattice lines of both the radiation pattern and the feed line may be 0.5 µm to 2 µm, and more specifically, may be 0.5 µm, 0.8 µm, 1 µm, 1.5 µm, 1.7 µm, or 2 µm.

[0251] Here, the thickness of the lattice line structure is not particularly limited, but may be controlled by the thickness of the confining layer. Here, the thickness range of the lattice line structure will be described assuming that the material of the electrode layer is a metal. Considering the non-uniformity of electroplating, for example, the thickness of the electroplated metal may be 80 to 90% of the thickness of the confining layer. This is because a thin metal affects radiation efficiency, while a thick metal significantly affects transmittance. For example, the ratio of the thickness of the lattice line structure in the direction perpendicular to the first substrate to the line width of the lattice line structure may be in the range of 2 or more, and for example, the aspect ratio of the lattice line structure may be 2, 3, 4, 5, 6, or 7.

[0252] Here, the spacing between adjacent lattice lines in the lattice line structure is not particularly limited, but as an example, it may all be in the range of 20 to 250 μm, preferably 50 to 200 μm, and specifically 50 μm, 100 μm, or 200 μm.

[0253] Here, the light transmittance of the above-mentioned lattice line structure is not particularly limited, but as an example, it may all exceed 86%, for example, in the range of 86% to 92%, specifically, 86%, 87%, 88%, 89%, 90%, 91%, or 92%, etc.

[0254] The line width of the grid lines of the radiation pattern may be set smaller than the spacing between adjacent grid lines of the radiation pattern, and the thickness of the radiation pattern in a direction perpendicular to the first substrate may be set larger than the line width of the grid lines of the radiation pattern.The line width of the grid lines of the feed line may be set smaller than the spacing between adjacent grid lines of the radiation pattern, and the thickness of the feed line in a direction perpendicular to the first substrate may be set larger than the line width of the grid lines of the radiation pattern.

[0255] By configuring both the radiation pattern and the power supply line in a lattice line structure and combining it with a light-transmitting first substrate, an electrode layer with higher light transmittance can be obtained. On the other hand, by adjusting the line width and thickness of the lattice line structure, an electrode layer with a high aspect ratio can be obtained, which not only ensures antenna radiation but also further improves the light transmittance of the electrode layer without affecting the electrical characteristics of each radiation pattern, thereby improving the light transmittance of the millimeter-wave antenna and improving the usability of the millimeter-wave antenna in the display area of ​​electronic devices.

[0256] The specific line widths of the grid lines of the radiation pattern and the feeder line, the specific spacing dimensions between adjacent grid lines, and the specific thicknesses of each in the direction perpendicular to the first substrate may be the same or different.

[0257] A millimeter-wave antenna according to an embodiment of the present application includes a first substrate, a confinement layer disposed on the first substrate and having a plurality of via holes, and an electrode layer disposed within each via hole of the confinement layer, the electrode layer including a radiation pattern and a feed line, both of which have a lattice-like structure. Because the electrode layer is disposed within the via holes of the confinement layer, the thickness of the electrode layer in a direction perpendicular to the first substrate can be controlled by the thickness of the via holes in the confinement layer in a direction perpendicular to the first substrate, and the width of the electrode layer in a direction parallel to the first substrate can be controlled by the width of the via holes in the confinement layer in a direction parallel to the first substrate. This results in an electrode layer with a high aspect ratio, i.e., both the radiation pattern and the feed line of the millimeter-wave antenna have high aspect ratios, enabling the millimeter-wave antenna to radiate effectively. Furthermore, when a millimeter-wave antenna with an extremely narrow linewidth is used in an electronic device, for example, when integrated into a display device, the impact on the display function of the display device can be significantly reduced or eliminated. On the other hand, by configuring both the radiation pattern and the power supply line in a lattice line structure, the light transmittance of the electrode layer can be effectively improved, and a transparent effect with excellent light transmittance can be imparted to the entire millimeter-wave antenna, and the light transmittance can be increased to a range of 86 to 92%, which is advantageous for use in display devices.

[0258] Optionally, the confinement layer comprises at least a first planar layer, the first planar layer having a plurality of via holes, and the electrode layer is provided in each via hole of the at least first planar layer.

[0259] The material of the first planar layer is not particularly limited, but may include, for example, a high-temperature stable photoresist (referred to as photoetching, OC), which also has a transmittance of 90% or more. For example, the material of the first planar layer may include a highly transparent photoresist or an organic material.

[0260] Conventional antennas have poor structural stability when the aspect ratio is high. For example, when the aspect ratio is high, the metal material of the electrode layer has a limited contact area between the metal and the base, resulting in a high center of gravity, which makes the antenna prone to collapse and breakage. This leads to poor wet etching uniformity and low antenna yield. Therefore, to achieve a transparent antenna with a high aspect ratio, it is necessary to strengthen the metal grid lines of the electrode layer. The first planarization layer improves wet etching uniformity and ensures that the electroplated metal grows in a predetermined direction. Therefore, the width and thickness of the millimeter-wave antenna according to the present embodiment may be controlled by the first planarization layer.

[0261] Optionally, the confinement layer includes a first planar layer having a plurality of via holes, and the electrode layer is disposed in each via hole of the first planar layer. Therefore, the width and thickness of the millimeter-wave antenna according to the embodiment of the present application can be controlled only by the first planar layer, and the implementation is simple and easy.

[0262] Optionally, the confinement layer further includes a first buffer layer and a mask layer, the first buffer layer being disposed between the first substrate and the first planar layer, the mask layer being disposed on a side of the first planar layer away from the first substrate, the first buffer layer, the first planar layer, and the mask layer all having a plurality of via holes, and an electrode layer being disposed in each via hole of the mask layer, in each via hole of the first planar layer, and in each via hole of the first buffer layer.

[0263] Here, the material of the first buffer layer is not particularly limited, but may include, for example, silicon nitride (SiN), silicon oxide (SiO), silicon oxynitride (SiON), a stack of silicon nitride and silicon oxide (two or more layers of SiN / SiO), etc.

[0264] Here, the material of the mask layer is not particularly limited, and may include, for example, metals such as indium tin oxide (ITO), molybdenum (Mo), molybdenum / aluminum / molybdenum (Mo / Al / Mo), titanium / aluminum / titanium (Ti / Al / Ti), etc. For example, the material of the mask layer may include non-metals such as organic materials.

[0265] In the millimeter-wave antenna according to the embodiment of the present application, an electrode layer is provided in each via hole of the mask layer, each via hole of the first planar layer, and each via hole of the first buffer layer. The thickness of the electrode layer in a direction perpendicular to the first substrate is controlled by the thickness of the via holes in the first buffer layer, the first planar layer, and the mask layer in a direction perpendicular to the first substrate. The width of the electrode layer in a direction parallel to the first substrate may be controlled by the width of the via holes in the first buffer layer and the first planar layer in a direction parallel to the first substrate. This results in an electrode layer with a high aspect ratio, i.e., both the radiation pattern and the feed line of the millimeter-wave antenna have a high aspect ratio, enabling the millimeter-wave antenna to radiate effectively. Furthermore, when a millimeter-wave antenna with an extremely narrow linewidth is used in an electronic device, for example, when integrated into a display device, the impact on the display function of the display device can be significantly reduced or eliminated. Furthermore, the first buffer layer can improve adhesion between the electrode layer and a subsequent film layer. The mask layer can be used as a reticle, simplifying implementation.

[0266] Optionally, the confinement layer further includes a first buffer layer, the first buffer layer being disposed between the first substrate and the first planar layer, both the first buffer layer and the first planar layer having a plurality of via holes, and an electrode layer being disposed in each via hole of the first planar layer and in each via hole of the first buffer layer.

[0267] In a method for manufacturing a millimeter-wave antenna according to an embodiment of the present application, an electrode layer is provided in each via hole in the first planar layer and each via hole in the first buffer layer. The thickness of the electrode layer in a direction perpendicular to the first substrate may be controlled by the thickness of the via holes in the first buffer layer and the first planar layer in a direction perpendicular to the first substrate, and the width of the electrode layer in a direction parallel to the first substrate may be controlled by the width of the via holes in the first buffer layer and the first planar layer in a direction parallel to the first substrate. This results in an electrode layer with a high aspect ratio, i.e., both the radiation pattern and the feed line of the millimeter-wave antenna have a high aspect ratio, enabling the millimeter-wave antenna to radiate effectively. Furthermore, when a millimeter-wave antenna with an extremely narrow linewidth is used in an electronic device, for example, when integrated into a display device, the impact on the display function of the display device can be significantly reduced or eliminated. Meanwhile, the first buffer layer can improve adhesion between the electrode layer and the subsequent film layer and prevent excessive etching of the film layer before the electrode layer. Meanwhile, the mask layer mainly functions as a reticle, enabling patterning of the film layer without the need for an additional reticle.

[0268] 10, the millimeter-wave antenna includes a first protective layer 10 provided on the side of first substrate 1 away from limiting layer 2, a packaging layer 12 provided on the side of limiting layer 2 away from first substrate 1, an adhesive layer 11, a second substrate 8, and a second protective layer 9, where packaging layer 12 is provided between limiting layer 2 and adhesive layer 11, adhesive layer 11 is provided between package layer 12 and second substrate 8, and second substrate 8 is provided between adhesive layer 11 and second protective layer 9. Of course, first substrate 1 and first protective layer 10 may be removed.

[0269] The millimeter-wave antenna shown in Figure 10 may be provided directly on the display device, which further includes a display substrate, and the millimeter-wave antenna shown in Figure 10 is located on the light-emitting side of the display substrate, and the electrode layer 4 is provided close to the display substrate.In this case, the millimeter-wave antenna is a face-up type, and the distance between the electrode layer 4 and the display substrate is small, so there is a risk that the electromagnetic waves radiated from the millimeter-wave antenna will be affected.

[0270] To reduce or even eliminate the influence of the display substrate on the electromagnetic waves radiated from the millimeter-wave antenna, the millimeter-wave antenna shown in Fig. 10 may be rotated to become the millimeter-wave antenna shown in Fig. 11. The millimeter-wave antenna shown in Fig. 11 is located on the light-emitting side of the display substrate, and the electrode layer 4 is provided away from the display substrate; in this case, the millimeter-wave antenna is a flip-chip type. Because the distance between the electrode layer 4 and the display substrate is large, the electromagnetic waves radiated from the millimeter-wave antenna are hardly affected.

[0271] An embodiment of the present application further provides an electronic device including the millimeter-wave antenna.

[0272] The electronic device described above can be applied to various circuits based on rigid and flexible substrates, but is not particularly limited thereto.

[0273] In the electronic device according to the present application, the electrode layer is positioned within the via holes of the confining layer, so that the thickness of the electrode layer in a direction perpendicular to the first substrate is controlled by the thickness of the via holes of the confining layer in a direction perpendicular to the first substrate, and the width of the electrode layer in a direction parallel to the first substrate may be controlled by the width of the via holes of the confining layer in a direction parallel to the first substrate. This results in an electrode layer with a high aspect ratio, i.e., both the radiation pattern and the feed line of the millimeter-wave antenna have high aspect ratios, enabling the millimeter-wave antenna to radiate effectively. Furthermore, when a millimeter-wave antenna with an extremely narrow line width is used in an electronic device, for example, when integrated into a display device, the impact on the display function of the display device can be significantly reduced or eliminated. Meanwhile, by configuring both the radiation pattern and the feed line in a lattice line structure, the light transmittance of the electrode layer can be effectively improved, imparting a transparent effect with excellent light transmittance throughout the millimeter-wave antenna, and increasing the light transmittance range to 86-92%, making it advantageous for use in display devices.

[0274] Optionally, as shown in Figures 13 to 16, the electronic device includes a display device including a display panel 20, and the display panel 20 includes a display substrate 201 and the above-mentioned millimeter-wave antenna TX, and the millimeter-wave antenna TX is provided on the light-emitting side of the display substrate 201.

[0275] The display substrate may include, but is not limited to, a liquid crystal display (LCD) substrate or an organic light-emitting diode (OLED) display substrate.

[0276] The millimeter wave antenna is provided on the light output side of the display substrate, but since the millimeter wave antenna is transparent, it does not affect the display on the display substrate.

[0277] In the electronic device according to the embodiment of the present application, the millimeter-wave antenna has a high aspect ratio, enabling effective radiation. Furthermore, by using a millimeter-wave antenna with an extremely narrow line width on the light-emitting side of the display device, the influence on the display function of the display device can be significantly reduced or even eliminated.

[0278] Optionally, as shown in FIGS. 13 to 16, the display panel 20 further includes a touch layer 202, which is disposed between the display substrate 201 and the millimeter-wave antenna TX.

[0279] Alternatively, as shown in FIGS. 13 to 16, the touch layer 202 is provided on the side of the millimeter-wave antenna TX that is farther away from the display substrate 201.

[0280] The structure of the touch layer may be, but is not limited to, a mutual capacitance touch structure or a self-capacitance touch structure, for example. The mutual capacitance touch structure or the self-capacitance touch structure can be obtained according to related art, and therefore will not be described in detail here. For example, the structure of the touch layer may include a flexible multi-layer on cell (FMLOC) touch structure, which reduces the thickness of the screen, makes it easy to bend, and eliminates fitting tolerances, thereby reducing the width of the frame. The FMLOC structure can be obtained according to related art, and therefore will not be described in detail here.

[0281] The electronic device according to the embodiment of the present application is provided with a touch layer that does not affect the normal operation of the antenna, and therefore the touch function is also realized.

[0282] Optionally, as shown in Figures 13 to 16, the display panel 20 further includes a first polarizing unit 203 and a cover plate 204, where the first polarizing unit 203 is disposed on the side of the millimeter-wave antenna TX away from the display substrate 201, and the cover plate 204 is disposed on the side of the first polarizing unit 203 away from the display substrate 201.

[0283] The material and type of the first polarizing unit are not particularly limited, but for example, the material of the first polarizing unit may include polyvinyl alcohol (PVA) and polyvinyl chloride (PVC). For example, the type of the first polarizing unit may include a linear polarizer or a grating.

[0284] The material and structure of the cover plate are not particularly limited, but for example, the material of the cover plate may include glass. For example, the cover plate may be a single layer or a multi-layer.

[0285] In the electronic device according to the embodiment of the present application, the first polarizing unit changes the polarization direction of light to improve display, and the cover plate protects the screen and prevents scratches on the screen.

[0286] 13 to 16, the display panel 20 further includes a first adhesive layer between the touch layer 202 and the millimeter-wave antenna TX, and a second adhesive layer 206 between the first polarization unit 203 and the cover plate 204, thereby ensuring good adhesion between the two adjacent layers. The materials for the first and second adhesive layers are not particularly limited, but as an example, the materials for the first and second adhesive layers may include a highly transparent adhesive such as an optically clear adhesive (OCA).

[0287] Additionally, the first polarizing unit may function as a cover plate.

[0288] As shown in FIG. 13, the display substrate 201 is an LCD, which may include a backlight 31, a first glass substrate 32, a liquid crystal layer 33, and a second glass substrate 34 stacked in order, to obtain an LCD display-on-antenna structure, and the LCD may be a reflective LCD.

[0289] As shown in FIG. 14, the display substrate 201 may include a metal heat dissipation film layer 35, a first glass substrate 32, an OLED 36, and a second glass substrate 34 stacked in order, thereby obtaining a rigid OLED display-on-antenna structure.

[0290] As shown in FIG. 15, the display substrate 201 includes a flexible base 37 and an OLED 36 stacked in order, and the OLED 36 is adhered to the touch layer 202 through a third adhesive layer 207, in this case a flexible OLED (touch external) display-on-antenna structure is obtained.

[0291] As shown in FIG. 16, the display substrate 201 may include a flexible base 37 and an OLED 38 integrated with touch function, which are stacked in order, thereby obtaining a flexible OLED (touch-integrated) display-on-antenna structure.

[0292] Here, only the contents related to the gist of the invention will be introduced, and the remaining structure can be referred to in the related art, so detailed description will be omitted here.

[0293] The OLED (external touch) display-on-antenna structure will be described in detail below with reference to FIG. 17.

[0294] As shown in FIG. 17 , a gate 62, a gate insulating layer 63, an active layer 64, a source-drain layer 65, a first planar layer 66, an anode 67, a pixel confining layer 68, an organic functional layer 69, a cathode 70, a first organic package layer 71, an inorganic package layer 72, a second organic package layer 73, a second buffer layer 74, a TSP touch layer 75 (including a first metal 76 and a second metal 77), a first OCA layer 78, a transparent mm-wave antenna layer 79, a polarizer 80, a second OCA layer 81, and a glass cover plate 82 are stacked in order on a PI base 61.

[0295] Below, the LCD display-on-antenna structure will be explained in detail with reference to FIG.

[0296] As shown in FIG. 18 , a second polarizer 84, a first glass base 85, a gate 62, a gate insulating layer 63, an active layer 64, a source-drain layer 65, a first planar layer 66, a first ITO layer 86, a first alignment film 87, a liquid crystal 88 and a spacer 93, a second alignment film 89, a second ITO layer 90, a color film layer 91 and a black matrix 92, a second glass base 93, a TSP touch layer 75, a first OCA layer 78, a transparent millimeter-wave antenna layer 79, a polarizer 80, a second OCA layer 81, and a glass cover plate 82 are stacked in this order on a backlight module 83.

[0297] Optionally, as shown in Figures 20, 21 and 23, the display device further includes a first controller 41 and a second controller 42, where the first controller 41 is electrically connected to the display substrate 201 and configured to control the display substrate 201, and the second controller 42 is electrically connected to the millimeter-wave antenna TX and configured to control the millimeter-wave antenna TX.

[0298] Here, the types of the first controller and the second controller are not particularly limited, but as an example, both the first controller and the second controller may include chips such as flexible printed circuits (FPCs) and printed circuit boards (PCBs).

[0299] Here, the manner in which the first controller is electrically connected to the display substrate is not particularly limited. For example, the first controller may be electrically connected to the display substrate directly, or may be electrically connected to the display substrate via another structure.

[0300] Here, the manner in which the second controller is electrically connected to the millimeter-wave antenna is not particularly limited, but as an example, the second controller may be electrically connected directly to the millimeter-wave antenna, or may be electrically connected to the millimeter-wave antenna via another structure.

[0301] In the display device according to the embodiment of the present application, the first controller and the second controller can control the operation of the display substrate and the millimeter-wave antenna, respectively, so that the antenna RF chip and connection substrate can be used independently without being integrated with the display chip (the processes are not compatible), which makes implementation simple and easy.

[0302] Optionally, as shown in Figures 21 and 22, the display panel includes a display area AA and a frame area BB connected to the display area, the millimeter-wave antenna TX and the display substrate 201 are both located in the display area AA and the frame area BB, the first controller 41 is coupled to the display substrate 201 located in the frame area BB, the millimeter-wave antenna TX further extends along the frame area BB of the display panel in a direction away from the display area AA, the portion of the millimeter-wave antenna TX extending from the display panel includes a bending area CC and a non-bending area DD, the bending area CC is located between the non-bending area DD and the frame area BB of the display panel, and the second controller 42 is located in the non-bending area DD and is coupled to the millimeter-wave antenna TX located in the non-bending area DD.

[0303] The display area mentioned above refers to the area responsible for display, and the frame area is generally where drive wiring, drive circuits, for example, a gate driver on array (GOA) drive circuit, an in-screen camera, earphones or speakers, etc. are provided.

[0304] Here, the manner in which the first controller is coupled to the display substrate located in the frame area is not particularly limited. For example, the first controller may be directly coupled to the display substrate located in the frame area, or may be coupled to the display substrate located in the frame area via another structure.

[0305] The bending region refers to a region of the display device that can be bent.

[0306] Because the transparent millimeter-wave antenna is located on the display light-emitting side, it needs to be powered by a transmission line to operate properly, and therefore the transmission line needs to be bent. Taking a flexible OLED as an example, all display- and touch-related lines are fabricated on a PI base, allowing them to be easily bent to the back side of the display panel. Because the transparent millimeter-wave antenna according to the present embodiment is located on a layer different from the display substrate and touch layer, the transparent millimeter-wave antenna needs to be bent separately.

[0307] In the display device according to the embodiment of the present application, the millimeter-wave antenna uses a flexible substrate, such as a substrate made of a material with high strength, flexibility, and transparency, such as PI, which allows for small-angle bending. The bending region is processed during the manufacturing of the millimeter-wave antenna. As shown in FIG. 21, the region for manufacturing the millimeter-wave antenna is much larger than the display area AA. The region from the display area AA to the frame region BB transitions from a grid-like structure to a solid structure. No transparency is required outside the display area AA, thereby realizing the transition from the antenna radiation region to the transmission region. The coupling for connecting the transmission line to the second controller 42 may be performed in a location other than the bending region.

[0308] The millimeter-wave antenna located in the display AA area has a highly transparent lattice-line structure, while the millimeter-wave antenna located in the frame area BB is not limited to this, and may be, for example, a lattice-line structure or a solid structure.

[0309] Optionally, as shown in FIG. 21 , the display device further includes a ground layer 44, the ground layer being located on a side of the millimeter-wave antenna that extends from the display panel closer to the first substrate, and the ground layer being located in the non-bending region and the bending region.

[0310] As shown in FIG. 21, the electrode layer 4 of the millimeter-wave antenna TX is further provided on the second controller 42 and on the side of the millimeter-wave antenna TX away from the ground layer 44 of the portion extending from the display panel, and is located in the bending region CC and the non-bending region DD, and the electrode layer 4 is configured to be bent together with the ground layer 44 in the bending region CC.

[0311] Here, the material of the ground layer is not particularly limited, but may be a metal, for example.

[0312] In the display device according to the embodiment of the present application, the millimeter-wave antenna changes from a grid-line structure to a solid structure from the display area AA to the frame area BB, thereby realizing a transition from the antenna radiation area to the transmission area. Coupling for connecting the transmission line to the second controller 42 may be performed at a location other than the bent area. Also, grounding may be achieved through a ground layer.

[0313] Optionally, as shown in Figures 23 and 24, the display panel includes a display area AA and a frame area BB connected to the display area AA, the millimeter-wave antenna TX and the display substrate 201 are both located in the display area AA and the frame area BB, the first controller 41 is coupled to the display substrate 201 located in the frame area BB, and a portion of the second controller 42 is located in the frame area BB and coupled to the millimeter-wave antenna TX located in the frame area BB.

[0314] Here, the manner in which the first controller is coupled to the display substrate located in the frame area is not particularly limited. For example, the first controller may be directly coupled to the display substrate located in the frame area, or may be coupled to the display substrate located in the frame area via another structure.

[0315] Here, the manner in which the second controller is coupled to the millimeter-wave antenna located in the frame area is not particularly limited, but as an example, the second controller may be directly coupled to the millimeter-wave antenna located in the frame area, or may be coupled to the millimeter-wave antenna located in the frame area via another structure.

[0316] In the display device according to the embodiment of the present application, the millimeter-wave antenna is fabricated on a rigid substrate, such as a substrate made of a brittle, bendable material like COP, which allows for bending, eliminating the need for a bending region when fabricating the millimeter-wave antenna. As shown in FIG. 23, the region where the millimeter-wave antenna is fabricated is approximately the same size as the display region AA, and the frame region BB, which is gradually changing from a grid-like structure to a solid structure, functions as a pre-remained coupling pad. The second controller 42 used for the transmission line is fabricated separately, and in the coupling region, the second controller 42 is coupled to the millimeter-wave antenna pad, thereby realizing the transition from the antenna region to the transmission line region.

[0317] Optionally, as shown in FIG. 23, the remaining portion of the second controller 42 extends along the frame region BB of the display panel in a direction away from the display region AA and includes a bending region CC and a non-bending region DD, the bending region CC being located between the non-bending region DD and the frame region BB of the display panel.

[0318] As shown in FIG. 23, the display device further includes a grounding layer 44, which is provided on the side closer to the first substrate of the second controller 42 and has a gap between it and the frame region BB, and the grounding layer 44 is located in the non-bending region DD and part of the bending region CC.

[0319] As shown in Figure 23, the electrode layer 4 of the millimeter-wave antenna TX is further provided on the side away from the ground layer 44 of the second controller 42 and is located in the bending region CC and the non-bending region DD, and the electrode layer 4 of the millimeter-wave antenna TX is configured to be bent in the bending region CC together with the remaining part of the second controller 42 and the ground layer 44.

[0320] Here, the material of the ground layer is not particularly limited, but may be a metal, for example.

[0321] In the display device according to the embodiment of the present application, the millimeter-wave antenna changes from a grid-line structure to a solid structure from the display area AA to the frame area BB, thereby realizing a transition from the antenna radiation area to the transmission area. Coupling for connecting the transmission line to the second controller may be performed in the frame area BB. Also, grounding may be achieved through the ground layer.

[0322] The embodiment of the present application further provides a method for driving the above electronic device.

[0323] The driving method includes the following steps S01 and S02.

[0324] S01: The first controller controls the display board to make a display.

[0325] S02: The second controller controls the millimeter wave antenna to radiate.

[0326] In the driving method for an electronic device according to the embodiment of the present application, the first controller and the second controller can control the operation of the display substrate and the millimeter-wave antenna, respectively, so that the RF chip and connection substrate of the antenna can be used independently without being integrated with the display chip (the processes are not compatible), which is simple and easy to implement.

[0327] In the specification provided herein, many specific details are set forth. However, it is understood that embodiments of the present application may be practiced without these specific details. In some instances, well-known methods, structures, and techniques have not been shown in detail in order not to obscure an understanding of this specification.

[0328] It should be noted that the above embodiments are only used to explain the technical solutions of the present application and do not limit the present application. Although the present application has been described in detail with reference to the above embodiments, those skilled in the art should understand that the technical solutions described in the above embodiments may be modified or some technical features may be replaced with equivalents. However, these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present application. [Explanation of symbols]

[0329] 1 First board 2 Limited tier 3. Photoresist 4 electrode layer 5 Peel layer 6. Surface seed layer 7 Second flat layer 8 Second board 9 Second protective layer 10 1st protective layer 11 Adhesive layer 12 Package Layer 20 Display panel 21 1st flat layer 22 First buffer layer 23 Mask Layer 31 Backlight 32 First glass substrate 33 Liquid crystal layer 34 Second glass substrate 35 Metal heat dissipation film layer 37 Flexible Base 41 First Controller 42 Second Controller 44 Ground layer 61 PI base Gate 62 63 Gate insulating layer 64 active users 66 1st flat layer 67 Anode 68 pixel limited layer 69 Organic functional layer 70 Cathode 71 First organic package layer 72 Inorganic Package Layer 73 Second organic package layer 74 Second buffer layer 75 TSP touch layer 76 First metal 77 Second metal 78 1st OCA layer 79 mmWave Antenna Layer 80 Polarizer 81 2nd OCA layer 82 Glass Cover Plate 83 Backlight Module 84 Second polarizer 85 First Glass Base 86 1st ITO layer 87 First alignment film 88 LCD 89 Second alignment film 90 2nd ITO layer 91 color film layers 92 Black Matrix 93 Spacer 201 Display board 202 Touch Layer 203 First Polarization Unit 204 Cover Plate 206 Second adhesive layer 207 Third adhesive layer

Claims

1. providing a first substrate; forming a confinement layer on the first substrate; treating the confinement layer so that the confinement layer has a plurality of via holes; forming an electrode layer in each of the via holes of the confinement layer, the electrode layer including a radiation pattern and a feed line, and both the radiation pattern and the feed line including a lattice line structure.

2. The step of forming a confinement layer on the first substrate comprises: forming at least a first planarization layer on the first substrate; said step of treating said confinement layer so that said confinement layer has a plurality of via holes comprises: treating at least the first planar layer so that the first planar layer has a plurality of via holes; The step of forming an electrode layer in each of the via holes of the confinement layer comprises: The method for manufacturing a millimeter-wave antenna according to claim 1 , further comprising the step of forming the electrode layer at least in each of the via holes of the first flat layer.

3. The step of forming at least a first planarization layer on the first substrate includes: forming the first planarization layer on the first substrate; The step of treating at least the first planar layer so that the first planar layer has a plurality of via holes comprises: treating the first planar layer so that the first planar layer has a plurality of via holes; The step of forming the electrode layer in each of the via holes in at least the first planar layer includes: The method for manufacturing a millimeter-wave antenna according to claim 2 , further comprising the step of forming the electrode layer in each of the via holes in the first flat layer.

4. The step of forming at least a first planarization layer on the first substrate includes: forming a first buffer layer on the first substrate; forming the first planarization layer on the first buffer layer; forming a mask layer on the first planar layer; The step of treating at least the first planar layer so that the first planar layer has a plurality of via holes comprises: simultaneously processing at least two of the first buffer layer, the first planar layer, and the mask layer such that each of the first buffer layer, the first planar layer, and the mask layer has a plurality of via holes; The step of forming the electrode layer in each of the via holes in at least the first planar layer includes: The method for manufacturing a millimeter-wave antenna according to claim 2 , further comprising forming the electrode layer at least in each of the via holes of the first buffer layer and in each of the via holes of the first flat layer.

5. the step of simultaneously processing at least two of the first buffer layer, the first planar layer, and the mask layer so that each of the first buffer layer, the first planar layer, and the mask layer has a plurality of via holes includes: sequentially processing the mask layer, the first planar layer, and the first buffer layer so that each of the mask layer, the first planar layer, and the first buffer layer has a plurality of via holes; The step of forming the electrode layer at least in each of the via holes of the first buffer layer and in each of the via holes of the first planar layer includes:

5. The method for manufacturing a millimeter-wave antenna according to claim 4, further comprising forming the electrode layer in each of the via holes of the mask layer, in each of the via holes of the first flat layer, and in each of the via holes of the first buffer layer.

6. The method for manufacturing a millimeter-wave antenna according to claim 5 , wherein the material of the mask layer includes a non-metal.

7. the step of simultaneously processing at least two of the first buffer layer, the first planar layer, and the mask layer such that each of the first buffer layer, the first planar layer, and the mask layer has a plurality of via holes includes: treating the mask layer so that the mask layer has a plurality of via holes; sequentially processing the first planar layer and the first buffer layer such that both the first planar layer and the first buffer layer have a plurality of via holes; The step of forming the electrode layer at least in each of the via holes of the first buffer layer and in each of the via holes of the first planar layer includes: removing the mask layer; forming the electrode layer in each of the via holes in the first planar layer and in each of the via holes in the first buffer layer; the step of simultaneously processing at least two of the first buffer layer, the first planar layer, and the mask layer such that each of the first buffer layer, the first planar layer, and the mask layer has a plurality of via holes includes: sequentially processing the mask layer, the first planar layer, and the first buffer layer so that the mask layer, the first planar layer, and the first buffer layer each have a plurality of via holes; The step of forming the electrode layer at least in each of the via holes of the first buffer layer and in each of the via holes of the first planar layer includes: removing the mask layer; and forming the electrode layer in each of the via holes in the first flat layer and in each of the via holes in the first buffer layer.

8. The method for manufacturing a millimeter-wave antenna according to claim 7 , wherein the material of the mask layer includes a metal.

9. After the step of providing a first substrate and before the step of forming a confinement layer on the first substrate, The method for manufacturing a millimeter-wave antenna according to claim 1 , further comprising the step of forming a surface seed layer on the first substrate.

10. After the step of forming an electrode layer in each of the via holes of the confinement layer, The method for manufacturing a millimeter-wave antenna according to claim 9 , further comprising the step of forming a second planar layer on the electrode layer.

11. After the step of forming a second planar layer on the electrode layer, The method for manufacturing a millimeter-wave antenna according to claim 10 , further comprising the step of forming a second substrate on the second planar layer.

12. After the step of providing a first substrate and before the step of forming a surface seed layer on the first substrate, forming a release layer on the first substrate; After the step of forming a second substrate on the second planar layer, further comprising removing the release layer and the first substrate; After the step of forming a second substrate on the second planar layer, The method for manufacturing a millimeter-wave antenna according to claim 11 , further comprising the step of forming a second protective layer on the second substrate.

13. A millimeter-wave antenna manufactured by the method for manufacturing a millimeter-wave antenna according to any one of claims 1 to 12, a first substrate; a confinement layer disposed on the first substrate and having a plurality of via holes; an electrode layer disposed within each of the via holes of the confinement layer, the electrode layer including a radiation pattern and a feed line, the radiation pattern and the feed line both including a lattice line structure.

14. the confinement layer includes at least a first planar layer; The millimeter-wave antenna according to claim 13 , wherein the first planar layer has a plurality of via holes, and the electrode layer is provided in at least each of the via holes of the first planar layer.

15. the confinement layer includes a first planar layer; the first flat layer has a plurality of via holes, and the electrode layer is provided in each of the via holes of the first flat layer; the confinement layer further includes a first buffer layer and a mask layer, the first buffer layer being provided between the first substrate and the first planar layer, and the mask layer being provided on a side of the first planar layer away from the first substrate; the first buffer layer, the first flat layer, and the mask layer each have a plurality of via holes, and the electrode layer is provided in each of the via holes in the mask layer, in each of the via holes in the first flat layer, and in each of the via holes in the first buffer layer; the confinement layer further includes a first buffer layer, the first buffer layer being disposed between the first substrate and the first planar layer; 15. The millimeter-wave antenna according to claim 14, wherein both the first buffer layer and the first planar layer have a plurality of via holes, and the electrode layer is provided in each of the via holes of the first planar layer and each of the via holes of the first buffer layer.

16. An electronic device comprising the millimeter wave antenna according to claim 13.

17. 17. The electronic device according to claim 16, comprising a display device including a display panel, the display panel including a display substrate and the millimeter-wave antenna according to claim 15, the millimeter-wave antenna being provided on a light-emitting side of the display substrate.

18. the display panel further includes a touch layer; the touch layer is provided between the display substrate and the millimeter-wave antenna; Alternatively, the touch layer is provided on a side of the millimeter-wave antenna that is farther from the display substrate, the display panel further includes a first polarizing unit and a cover plate; the first polarization unit is provided on a side of the millimeter-wave antenna that is farther from the display substrate, the cover plate is provided on a side of the first polarization unit that is away from the display substrate, The display device further includes a first controller and a second controller, the first controller being electrically connected to the display substrate and configured to control the display substrate; The electronic device of claim 17 , wherein the second controller is electrically connected to the millimeter-wave antenna and configured to control the millimeter-wave antenna.

19. the display panel includes a display area and a frame area connected to the display area, the millimeter-wave antenna and the display substrate are both located in the display area and the frame area, the first controller is coupled to the display substrate located in the frame region; the millimeter-wave antenna further extends along the frame region of the display panel in a direction away from the display region, the portion of the millimeter-wave antenna extending from the display panel includes a bent region and a non-bent region, the bent region is located between the non-bent region and the frame region of the display panel, the second controller is located in the non-bent region and is coupled to the millimeter-wave antenna located in the non-bent region, the display panel includes a display area and a frame area connected to the display area, the millimeter-wave antenna and the display substrate are both located in the display area and the frame area, the first controller is coupled to the display substrate located in the frame region; The electronic device of claim 18 , wherein a portion of the second controller is located in the frame region and coupled to the millimeter-wave antenna located in the frame region.

20. the display device further includes a ground layer, the ground layer being located on a side of the millimeter-wave antenna that is closer to the first substrate than the portion that extends from the display panel, and the ground layer being located in the non-bending region and the bending region; 20. The electronic device of claim 19, wherein the electrode layer of the millimeter-wave antenna is further provided on the second controller and on a side of the portion of the millimeter-wave antenna extending from the display panel that is away from the ground layer, and is located in the bending region and the non-bending region, and the electrode layer is configured to bend together with the ground layer in the bending region.

21. a remaining portion of the second controller extends along the frame region of the display panel in a direction away from the display region, and includes a bent region and a non-bent region, the bent region being located between the non-bent region and the frame region of the display panel; the display device further includes a ground layer, the ground layer being provided on a side of the second controller closer to the first substrate and having a gap between the ground layer and the frame region, the ground layer being located in the non-bending region and a part of the bending region; 20. The electronic device of claim 19, wherein the electrode layer of the millimeter-wave antenna is further provided on a side of the second controller away from the ground layer and is located in the bending region and the non-bending region, and the electrode layer of the millimeter-wave antenna is configured to be bent in the bending region together with the remaining portion of the second controller and the ground layer.

22. 17. A method for driving an electronic device according to claim 16, the first controller controls the display board to display; the second controller controls the millimeter wave antenna to radiate.

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