Faraday faceplate

Abstract

An exemplary semiconductor processing chamber faceplate can include a body having a first surface and a second surface opposite the first surface. The body can define a plurality of apertures through one or both of the first surface and the second surface. The faceplate can include a heater disposed within the body. The faceplate can include a first RF mesh disposed between the heater and the first surface. The faceplate can include a second RF mesh disposed between the heater and the second surface. The first RF mesh and the second RF mesh can be coupled together to form a Faraday cage around the heater.

Description

[Technical Field]

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application claims the benefit of and priority to U.S. patent application Ser. No. 17 / 979,572, filed Nov. 4, 2022, entitled "FARADAY FACEPLATE," the entire contents of which are incorporated herein by reference.

[0002]

[0002] The present technology relates to semiconductor processing equipment. More particularly, the present technology relates to semiconductor chamber components and methods of substrate processing. [Background technology]

[0003]

[0003] Plasma is used in various operations during substrate processing. In some applications, plasma is intended to be generated only within the processing region of the substrate processing system, beneath the faceplate during substrate processing. However, unwanted plasma (called parasitic plasma) can be inadvertently generated at locations outside the processing region. This parasitic plasma can cause a variety of problems, including an increased risk of substrate contamination, temperature non-uniformity across the substrate, and failure of certain components of the substrate processing system.

[0004]

[0004] Therefore, minimizing parasitic plasma is beneficial to a substrate processing system. Summary of the Invention

[0005] An exemplary semiconductor processing chamber faceplate may include a body having a first surface and a second surface opposite the first surface. The body may define a plurality of apertures through one or both of the first surface and the second surface. The faceplate may include a heater disposed within the body. The faceplate may include a first RF mesh disposed between the heater and the first surface. The faceplate may include a second RF mesh disposed between the heater and the second surface. The first RF mesh and the second RF mesh may be coupled together to form a Faraday cage around the heater.

[0006] In some embodiments, the faceplate may include one or more conduits disposed within the body. The one or more conduits are fluidly connected to the plurality of apertures. The one or more conduits may form a retroflex pattern that distributes gas radially outward around an area of ​​the faceplate. The body may include first struts that secure the heater to the first conductive mesh. The body may include second struts that secure the heater to the second conductive mesh. A portion of the first strut may penetrate a first surface of the body. An insulating sleeve may circumferentially surround a portion of the first strut. The insulating sleeve may include a ceramic material. A portion of the first strut may be coupled to a ground RF strap. The body may be made of a ceramic material.

[0007] Some embodiments of the present technology may include a faceplate for a semiconductor processing chamber. The faceplate may include a ceramic body having a first surface and a second surface opposite the first surface. The body may define a plurality of apertures through one or both of the first surface and the second surface. The faceplate may include a heater disposed within the body. The faceplate may include a Faraday cage disposed within the body and formed around the heater.

[0008] In some embodiments, the Faraday cage may include a first RF mesh. The faceplate may include first posts that secure the heater to the first RF mesh. The Faraday cage may include a second RF mesh. The faceplate may include second posts that secure the heater to the second RF mesh. The plurality of apertures may extend through only the second surface of the body. The faceplate may include a shaft coupled to the body. The shaft may include a ground rod. An edge of the body may include an RF ground strap.

[0009] Some embodiments of the present technology may include a semiconductor processing chamber. The chamber may include a chamber body defining a processing chamber. The chamber may include a substrate support disposed within the processing chamber. The chamber may include a faceplate positioned on the chamber body. The faceplate may be characterized by a first surface and a second surface opposite the first surface. The second surface may face the substrate support. The faceplate may define a plurality of apertures extending through one or both of the first and second surfaces. A heater may be disposed within the faceplate. A first RF mesh may be disposed between the heater and the first surface. A second RF mesh can be disposed between the heater and the second surface, and the first RF mesh and the second RF mesh can be coupled together to form a Faraday cage around the heater.

[0010] In some embodiments, an edge of the face plate may include a grounding component coupled to at least one lid stack component. The grounding component may be coupled to the Faraday cage. The grounding component may be coupled to the Faraday cage via a post that penetrates the first surface. A portion of the post that extends outward from the face plate may include a ceramic sleeve.

[0011] A further understanding of the nature and advantages of the disclosed technology may be realized by reference to the remainder of this specification and the drawings. [Brief explanation of the drawings]

[0012] [Figure 1A] 1 is a schematic top view of an exemplary processing tool in accordance with some embodiments of the present technique. [Figure 1B]

[0013] 1 is a schematic partial cross-sectional view of an exemplary processing system, in accordance with some embodiments of the present technique; [Figure 2]

[0014] 1 is a schematic isometric view of a transfer section of an exemplary substrate processing system, in accordance with some embodiments of the present technique; [Figure 3]

[0015] 1 is a cross-sectional view of a faceplate arrangement of an exemplary substrate processing system, in accordance with some embodiments of the present technique; [Figure 4]

[0016] FIG. 4 is a partial cross-sectional view of the face plate of the face plate processing system of FIG. 3. [Figure 5]

[0017] FIG. 4 is a partial cross-sectional view of the face plate of the face plate processing system of FIG. 3. [Figure 6]

[0018] 1 is a partial cross-sectional view of an exemplary faceplate arrangement of an exemplary substrate processing system, in accordance with some embodiments of the present technique; DETAILED DESCRIPTION OF THE INVENTION

[0013]

[0019] Some figures are included as schematic diagrams. It is understood that the figures are for illustrative purposes and should not be considered to scale unless expressly stated to be to scale. Furthermore, as schematic diagrams, the figures are provided to aid in understanding and may not include all aspects or information compared to realistic depictions and may include material that is emphasized for illustrative purposes.

[0014]

[0020] In the accompanying figures, similar components and / or features may have the same reference numerals. Furthermore, various components of the same type may be distinguished according to the reference numeral, with a letter distinguishing between the similar components. When only a first reference numeral is used herein, the description is applicable to any one of the similar components having the same first reference numeral, regardless of the letter.

[0015]

[0021] Substrate processing can involve time-consuming steps to add, remove, or otherwise modify material on a wafer or semiconductor substrate. Efficient substrate movement can reduce wait times and increase substrate throughput. To increase the number of substrates processed within a cluster tool, additional chambers can be incorporated onto the mainframe. Transfer robots and processing chambers can be added sequentially by increasing the length of the tool, but as the footprint of the cluster tool expands, space efficiency can become less efficient. Therefore, the present technology can include cluster tools with an increased number of processing chambers within a given footprint. To accommodate the limited footprint around the transfer robot, the technology can increase the number of processing chambers laterally outward from the robot. For example, some conventional cluster tools may include one or two processing chambers positioned around a centrally located section of the transfer robot to maximize the number of chambers radially around the robot. The present technology can expand on this concept by incorporating additional chambers laterally outward as another row or group of chambers. For example, the techniques may be applied in a cluster tool that includes three, four, five, six, or more processing chambers, each accessible at one or more robot access locations.

[0016]

[0022] However, as additional process locations are added, accessing these locations from the central robot may no longer be feasible unless additional transfer capabilities are provided at each location. Some prior art may include a wafer carrier on which the substrate remains seated during transfer. However, the wafer carrier may contribute to thermal non-uniformities and particle contamination on the substrate. The present technology overcomes these issues by incorporating a transfer section vertically aligned with the processing chamber area and a carousel or transfer device that can operate in cooperation with the central robot to access the additional wafer locations.

[0017]

[0023] Many deposition and cleaning operations are more effective and / or efficient at higher temperatures, such as 400°C, 500°C, 600°C, or higher. Traditionally, faceplates are made of aluminum, which can sag or otherwise deform at such high temperatures. Furthermore, some conventional processing systems are designed to generate plasma only within the processing region (e.g., between the faceplate and the substrate support). However, the presence of an electric field above the faceplate can create a parasitic plasma in chamber components above the faceplate. This parasitic plasma can cause a number of problems. For example, the parasitic plasma can create a power loss source that robs the power used to deposit material on substrates within the processing region. The parasitic plasma can also create particle problems due to residues the parasitic plasma detaches from processing system surfaces that are difficult for the chamber cleaning operation to reach. The formation of a parasitic plasma can create process non-uniformity because the generation of the plasma (and subsequent power loss) can cause asymmetric plasma generation within the processing region. Furthermore, the amount of parasitic plasma generated from one chamber to another can vary, and parasitic plasma can contribute to chamber matching issues.

[0018]

[0024] The present technology overcomes these challenges by utilizing a faceplate formed from a ceramic material that can withstand temperatures exceeding 600°C. This may enable the faceplate to be used in high-temperature processing and / or cleaning operations. Additionally, embodiments of the faceplate may integrate a Faraday cage that surrounds a heating element disposed within the faceplate itself. The use of such a Faraday cage may help reduce the amount of electric field present above the faceplate, which may then reduce or eliminate the generation of parasitic plasma in chamber components above the faceplate. In some embodiments that reduce the amount of electric field present above the faceplate, the periphery of the faceplate may be grounded, which may further reduce the amount of electric field present above the faceplate. Thus, the present technology may help reduce or eliminate the presence of parasitic plasma in a processing system while enabling higher temperature process performance.

[0019]

[0025] While the remainder of the disclosure will routinely identify particular structures, such as a four-position transfer region, in which the present structures and methods may be employed, it will be readily understood that the present systems and methods are equally applicable to any number of structures and devices that may benefit from the described transfer functionality. Accordingly, the present technology should not be considered limited to use with any particular structure. Furthermore, while an exemplary tool system is described to provide a foundation for the present technology, it should be understood that the present technology may be incorporated into any number of semiconductor processing chambers and tools that may benefit from some or all of the described processes and systems.

[0020]

[0026] 1A illustrates a top view of one embodiment of a deposition, etch, bake, and cure chamber substrate processing tool or processing system 100 in accordance with some embodiments of the present technique. In the figure, a set of front-opening integrated pods 102 supplies substrates of various sizes, which are received by robotic arms 104a and 104b in a factory interface 103, placed in a load lock or low-pressure holding area 106, and then delivered to one of the substrate processing regions 108 positioned in chamber systems or quad sections 109a-c (each of which may be a substrate processing system having a transfer region fluidly coupled to multiple processing regions 108). While a quad system is shown, it should be understood that standalone chambers, twin chambers, and other platforms incorporating multiple chamber systems are also encompassed by the present technique. A second robot arm 110 housed within a transfer chamber 112 can be used to transfer substrate wafers from the holding area 106 to the quad section 109, and the second robot arm 110 can be housed within a transfer chamber that can connect each of the quad sections or processing systems. Each substrate processing area 108 can be equipped to perform several substrate processing steps, including cyclical layer deposition, atomic layer deposition, chemical vapor deposition, physical vapor deposition, as well as any number of deposition processes, including etching, pre-cleaning, annealing, plasma treatment, degassing, alignment, and other substrate processes.

[0021]

[0027] Each quad section 109 may include a transfer region that can receive substrates from and deliver substrates to the second robot arm 110. The transfer region of the chamber system may be aligned with a transfer chamber having the second robot arm 110. In some embodiments, the transfer region may be laterally accessible to the robot. In a subsequent step, components of the transfer section may vertically translate the substrate into an upper processing region 108. Similarly, the transfer region may also be operable to rotate the substrate between positions within each transfer region. The substrate processing region 108 may include any number of system components for depositing, annealing, curing, and / or etching a material film on a substrate or wafer. In one configuration, two sets of processing regions, such as those in quad sections 109a and 109b, may be used to deposit material on the substrate, and a third set of processing chambers, such as those in quad section 109c, may be used to cure, anneal, or process the deposited film. In another configuration, all three sets of chambers, such as all 12 chambers shown, can be configured to both deposit a film on a substrate and / or cure a film on a substrate.

[0022]

[0028] As shown, the second robot arm 110 may include two arms for simultaneously delivering and / or retrieving multiple substrates. For example, each quad section 109 may include two accesses 107 along a surface of the transfer region housing, which may be laterally aligned with the second robot arm. The accesses may be defined along a surface adjacent to the transfer chamber 112. In some embodiments, as shown, a first access may be aligned with a first substrate support of the quad section's plurality of substrate supports. Additionally, a second access may be aligned with a second substrate support of the quad section's plurality of substrate supports. The first substrate support may be adjacent to the second substrate support, and the two substrate supports may define a first row of substrate supports in some embodiments. As shown in the illustrated configuration, the second row of substrate supports may be positioned laterally outward from the transfer chamber 112 and behind the first row of substrate supports. The two arms of the second robot arm 110 may be spaced apart so that the two arms can simultaneously enter a quad section or chamber system to deliver or retrieve one or two substrates to a substrate support in the transfer region.

[0023]

[0029] Any one or more of the transfer regions described may incorporate additional chambers separate from the fabrication systems shown in the different embodiments. It will be understood that additional configurations of deposition, etching, annealing, and curing chambers for material films are contemplated by the processing system 100. Additionally, any number of other processing systems may be utilized with the present technology that may incorporate transfer systems for performing any of the specific processes, such as transferring substrates. In some embodiments, a processing system that may provide access to multiple processing chamber regions while maintaining a vacuum environment in various sections, such as the holding and transfer areas mentioned, may enable processes to be performed in multiple chambers while maintaining a specific vacuum environment between separate processes.

[0024]

[0030] FIG. 1B shows a schematic cross-sectional elevation view of one embodiment of an exemplary processing tool, e.g., through a chamber system, in accordance with some embodiments of the present technique. FIG. 1B may show a cross-sectional view through any two adjacent processing regions 108 in any quad section 109. The elevation view may show the configuration or fluid connection between one or more processing regions 108 and the transfer region 120. For example, a continuous transfer region 120 may be defined by a transfer region housing 125. The housing may define an open interior space in which several substrate supports 130 may be disposed. For example, as shown in FIG. 1A, the exemplary processing system may include four or more substrate supports 130, including multiple substrate supports 130 distributed within the housing around the transfer region. The substrate support may be a pedestal as shown, although several other configurations may also be used. In some embodiments, the pedestal may be vertically translatable between the transfer region 120 and a processing region above the transfer region. The substrate support may be vertically translatable along a central axis of the substrate support along a path between a first position and a second position within the chamber system. Thus, in some embodiments, each substrate support 130 may be axially aligned with an overlying processing region 108 defined by one or more chamber components.

[0025]

[0031] The open transfer region may provide the ability for a transfer device 135, such as a carousel, to engage and move a substrate, e.g., rotationally, between various substrate supports. The transfer device 135 may be rotatable about a central axis, which may allow a substrate to be positioned for processing in any of the processing regions 108 in the processing system. The transfer device 135 may include one or more end effectors that may engage the substrate from above, below, or may engage the outer edge of the substrate to move it around the substrate supports. The transfer device may receive a substrate from a transfer chamber robot, such as robot 110 described above. The transfer device may then rotate the substrate to an alternating substrate support to facilitate the delivery of additional substrates.

[0026]

[0032] Once the transfer apparatus is positioned and waiting for processing, an end effector or arm can be positioned between the substrate supports, allowing the substrate supports to rise above the transfer apparatus 135 and deliver substrates into the processing region 108, which may be vertically offset from the transfer region. For example, as shown, substrate support 130a can deliver substrates into processing region 108a, while substrate support 130b can deliver substrates into processing region 108b. This can also be done with the other two substrate supports and processing regions, as well as with additional substrate supports and processing regions in embodiments where additional processing regions are included. In this configuration, when the substrate supports are operably engaged to process a substrate, for example in the second position, they can at least partially define the processing region 108 from below, which may be axially aligned with the associated substrate support. The processing region may be defined from above by a face plate 140 and other lid stack components. In some embodiments, each processing region may have an individual lid stack component, while in some embodiments, a component may accommodate multiple processing regions 108. Based on this configuration, in some embodiments, each processing region 108 may be fluidly isolated from above from each other processing region within the chamber system or quad section, while still being fluidly coupled to the transfer region.

[0027]

[0033] In some embodiments, face plate 140 may act as an electrode of the system for creating a localized plasma within processing region 108. As shown, each processing region may utilize or incorporate a separate face plate. For example, face plate 140a may be included to define processing region 108a from above, and face plate 140b may be included to define processing region 108b from above. In some embodiments, the substrate support may act as a companion electrode for generating a capacitively coupled plasma between the face plate and the substrate support. The face plate may be heated by a heater 142 that extends around the face plate in some embodiments. Pumping liner 145 may at least partially define processing region 108 radially or laterally, depending on the geometry of the space. Again, separate pumping liners may be used for each processing region. For example, pumping liner 145a may at least partially define processing region 108a radially, and pumping liner 145b may at least partially define processing region 108b radially. The pumping liner 145 may seat on a choke plate 147, which may control heat distribution from the lid stack to the cooled chamber body. In embodiments, a shield plate 150 may be positioned between the lid 155 and the face plate 140, and again, separate shield plates may be included to facilitate fluid distribution within each processing region. For example, shield plate 150a may be included for distribution toward processing region 108a, and shield plate 150b may be included for distribution toward processing region 108b.

[0028]

[0034] The lid 155 may be a separate component for each processing region or may include one or more common features. In some embodiments, the lid 155 may be one of two separate lid plates in the system. For example, a first lid plate 158 may sit atop the transfer region housing 125. The transfer region housing may define an open space, and the first lid plate 158 may include several apertures extending therethrough to divide the overlying space into specific processing regions. In some embodiments, as shown, the lid 155 may be a second lid plate or a single component defining multiple apertures 160 for fluid delivery to individual processing regions. For example, the lid 155 may define a first aperture 160a for fluid delivery to processing region 108a, and the lid 155 may define a second aperture 160b for fluid delivery to processing region 108b. When included, additional apertures may be defined for additional processing regions within each section. In some embodiments, each quad section 109, or a multi-processing region section that may accommodate more or less than four substrates, may include one or more remote plasma units 165 for delivering plasma effluents into the processing chambers. In some embodiments, each chamber processing region may incorporate an individual plasma unit, while in some embodiments, fewer remote plasma units may be used. For example, as shown, a single remote plasma unit 165 may be used for multiple chambers, e.g., two, three, four, or more chambers (up to all the chambers for a particular quad section). In embodiments of the present technology, piping may extend from the remote plasma unit 165 to each aperture 160 to deliver plasma effluents for processing or cleaning.

[0029]

[0035] In some embodiments, a purge channel 170 may penetrate the transfer region housing near or adjacent each substrate support 130. For example, multiple purge channels may penetrate the transfer region housing to provide fluid access for delivering fluidly connected purge gas into the transfer region. The number of purge channels may be the same as or different from the number of substrate supports in the processing system, and may be greater or less than the number of substrate supports. For example, a purge channel 170 may penetrate the transfer region housing beneath each substrate support. In the illustrated two substrate supports 130, a first purge channel 170a may penetrate the housing adjacent substrate support 130a, and a second purge channel 170b may penetrate the housing adjacent substrate support 130b. It should be understood that any additional substrate supports may similarly have purge channels plumbed through the transfer region housing to provide purge gas into the transfer region.

[0030]

[0036] When purge gas is delivered through one or more of the purge channels, it may also be exhausted through pumping liner 145, which may provide an exhaust path from the processing system. As a result, in some embodiments, both the process precursor and the purge gas may be exhausted through the pumping liner. The purge gas may flow upward into the associated pumping liner; for example, purge gas flowing through purge channel 170b may be exhausted from the processing system through pumping liner 145b.

[0031]

[0037] As previously mentioned, processing system 100, and more specifically, a quad section or chamber system incorporated into processing system 100 or other processing systems, may include a transfer section positioned below the depicted processing chamber region. FIG. 2 shows a schematic isometric view of the transfer section of an exemplary chamber system 200 in accordance with some embodiments of the present technique. FIG. 2 may illustrate additional aspects or variations of the transfer region 120 described above, which may include any of the components or features described above. The depicted system may include a transfer region housing 205 defining a transfer region in which several components may be included. Further, the transfer region may be at least partially defined from above by a processing chamber or processing region in fluid communication with the transfer region, for example, by the processing chamber region 108 shown in quad section 109 in FIG. 1A. Sidewalls of the transfer region housing may define one or more access locations 207 where substrates can be delivered and retrieved, for example, by the second robot arm 110 described above. The access locations 207 may be slit valves or other sealable access positions, and in some embodiments include doors or other sealing mechanisms to provide a sealed environment within the transfer region housing 205. While two such access locations 207 are shown, it is understood that in some embodiments only a single access location 207 may be included, or access locations on multiple sides of the transfer region housing may also be included. It is also understood that the illustrated transfer section may be sized to accommodate substrates of any substrate size, including 200 mm, 300 mm, 450 mm, or larger or smaller, including substrates characterized by any number of profiles or shapes.

[0032]

[0038] Within the transfer region housing 205, there may be multiple substrate supports 210 positioned around the transfer region space. While four substrate supports are shown, it should be understood that any number of substrate supports is similarly encompassed by embodiments of the present technology. For example, three, four, five, six, eight, or more substrate supports 210 may be housed within the transfer region according to embodiments of the present technology. A second robot arm 110 may deliver substrates to one or both of the substrate supports 210a or 210b via the access portion 207. Similarly, the second robot arm 110 may retrieve substrates from these locations. Lift pins 212 may protrude from the substrate support 210, allowing the robot to access underneath the substrate. The lift pins may be fixed on the substrate support, or may be fixed where the substrate support may be recessed downward, or in some embodiments, the lift pins may also pass through the substrate support to raise and lower. The substrate support 210 may be vertically translatable and, in some embodiments, may extend to a processing chamber region of a substrate processing system positioned above the transfer region housing 205 , such as processing chamber region 108 .

[0033]

[0039] The transfer region housing 205 may provide access 215 for an alignment system, which may include an aligner that may pass through an aperture in the transfer region housing as shown and may operate in conjunction with a laser, camera, or other monitoring device projecting or transmitting through an adjacent aperture to determine whether a translating substrate is properly aligned. The transfer region housing 205 may also include a transfer apparatus 220 that may operate in several ways to position and move substrates between various substrate supports. In one example, the transfer apparatus 220 may move substrates on substrate supports 210a and 210b to substrate supports 210c and 210d, which may allow additional substrates to be delivered into the transfer chamber. Additional transfer steps may include rotating the substrate between the substrate supports for additional processing in the overlying processing region.

[0034]

[0040] The transfer apparatus 220 may include a central hub 225, which may include one or more shafts extending into the transfer chamber. The shafts may be coupled to an end effector 235. The end effector 235 may include multiple arms 237 extending radially or laterally outward from the central hub. While a central body with arms extending therefrom is shown, the end effector may further include separate arms, each coupled to a shaft or central hub, in various embodiments. Embodiments of the present technology may include any number of arms. In some embodiments, the number of arms 237 may be similar to or equal to the number of substrate supports 210 included in the chamber. Thus, for four substrate supports, as shown, the transfer apparatus 220 may include four arms extending from the end effector. The arms may be characterized by any number of shapes and profiles, such as straight or arcuate profiles, and may include any number of distal profiles including hooks, rings, forks, or other designs for supporting and / or providing access to the substrate, for example, for alignment or engagement.

[0035]

[0041] The end effector 235, or components or portions of the end effector, may be used to contact the substrate during transfer or movement. These components and end effectors may be made from or include several materials, including conductive and / or insulating materials. In some embodiments, materials may be coated or plated to withstand contact with precursors or other chemicals that may pass into the transfer chamber from overlying processing chambers.

[0036]

[0042] Additionally, materials can be provided or selected to withstand other environmental characteristics, such as temperature. In some embodiments, the substrate support may be operable to heat a substrate disposed thereon. The substrate support may be configured to raise the temperature of the surface or substrate to about or greater than 100°C, about or greater than 200°C, about or greater than 300°C, about or greater than 400°C, about or greater than 500°C, about or greater than 600°C, about or greater than 700°C, about or greater than 800°C, or higher. During operation, any of these temperatures may be maintained, and thus components of the transfer apparatus 220 may be exposed to any of the temperatures listed above or included. Consequently, in some embodiments, any of the materials may be selected to accommodate these temperature regimes, and may include materials such as ceramics and metals, which may be characterized by relatively low coefficients of thermal expansion or other beneficial properties.

[0037]

[0043] The connection of the components may also be adapted to operate in high temperature and / or corrosive environments. For example, if the end effector and end portion are each ceramic, the connection may include a press fit, snap fitting, or other fitting that may not include additional materials such as bolts that may expand and contract with temperature and crack the ceramic. In some embodiments, the end portion may be continuous with the end effector or may be integrally formed with the end effector. Any number of other materials that can promote process and resistance during operation may be utilized and are also encompassed by the present technology.

[0038]

[0044] 3 shows a cross-sectional view of an exemplary faceplate arrangement 300 configuration of an exemplary substrate processing system, in accordance with some embodiments of the present technique. In particular, the faceplate arrangement 300 includes a shaft 310, a ground rod 320, and a faceplate 400. The ground rod 320 can be used to discharge electrical current associated with the faceplate 400. The shaft 310 can house the ground rod 320 and / or other components. For example, in some embodiments, one or more gas supply lines can be disposed within the shaft 310. The gas supply lines can be coupled to one or more gas sources and used to deliver one or more precursors, cleaning gases, inert gases, and / or other gases to a supply space of the faceplate 400.

[0039]

[0045] 4 and 5 illustrate partial cross-sectional views of a face plate 400 according to some embodiments of the present technology. FIGS. 4 and 5 may provide additional details regarding components within system 100, such as face plate 140. Face plate 400 is understood to include any feature or aspect of system 100 described above in some embodiments. Face plate 400 may be used to perform semiconductor processing steps, including the deposition of hard mask materials described above, as well as other deposition, removal, and cleaning steps. Face plate 400 may illustrate a partial view of a face plate that may be incorporated into a semiconductor processing system, and may illustrate a view across the center of the face plate; the face plate may otherwise be of any size and include any number of apertures. While some apertures extending laterally or radially outward are shown, it should be understood that the illustrations are included solely for purposes of illustrating the embodiment and are not drawn to scale. For example, exemplary face plates may be characterized by a number of apertures along the central diameter of about 20 or more, and may be characterized by about 25 or more, about 30 or more, about 35 or more, about 40 or more, about 45 or more, about 50 or more, or more, as further described below.

[0040]

[0046] As mentioned above, face plate 400 can be included in any number of processing chambers, including system 100 described above. Face plate 400 can be included as part of a gas inlet assembly, such as a gas box and a shield plate. For example, a gas box can define or provide access to the processing chamber. A substrate support can be included within the chamber and configured to support a substrate for processing. A shield plate can be included in the chamber between the gas box and the substrate support. The shield plate can include or define several apertures through the plate. The components can include any of the features previously described for similar components, as well as various other modifications that are also encompassed by the present technology.

[0041]

[0047] As previously illustrated, in some embodiments, the face plate 400 may be positioned within the chamber between the shield plate and the substrate support. The face plate 400 may include an upper surface (or first surface) 401 and a lower surface (or second surface) 402 opposite the upper surface 401. For example, in some embodiments, the first surface 401 may face toward the shield plate, gas box, or gas inlet to the processing chamber, while the second surface 402 may be positioned to face the substrate support or substrate within the processing region of the processing chamber. For example, in some embodiments, the second surface 402 of the face plate 400 and the substrate support may at least partially define the processing region within the chamber. The face plate 400 may be characterized by a central axis that may extend vertically through the midpoint of the showerhead and may be coaxial with the central axis through the processing chamber.

[0042]

[0048] The face plate 400 may define a plurality of apertures 403 defined through at least a portion of the face plate 400. For example, in some embodiments, the apertures 403 may extend from the first surface 401 through the second surface 402. In other words, each aperture 403 may penetrate the entire thickness of the face plate 400. In other embodiments, each aperture 403 may be defined only by and penetrate only the second surface 402. For example, the face plate 400 may define one or more return conduits 450 that are fluidly coupled with the central space 470 and / or apertures 403 and may receive one or more gases from one or more gas supply lines (which may be provided in the shaft 310 in some embodiments). Gases from the supply lines may be distributed within the central space 470 and / or return conduits 450. Due to the small size of the apertures 403, gas can flow radially outward within the central space 470 and / or through the length of the return conduit 450 through the apertures 403 formed throughout the face plate 403. Each aperture 403 can provide a flow path through the face plate 400, and the apertures 403 can provide fluid access to the processing region of the chamber. Depending on the size of the face plate 400 and the size of the apertures 403, the face plate 400 can define any number of apertures 403 through the plate, for example, greater than about 1,000, greater than about 2,000, greater than about 3,000, greater than about 4,000, greater than about 5,000, greater than about 6,000, or more apertures 403. As mentioned above, the apertures can be included in a set of rings extending outward from a central axis, and as mentioned above, can include any number of rings. The rings may be characterized by any number of shapes, including circular or oval, as well as any other geometric pattern, such as rectangular, hexagonal, or any other geometric pattern that may include apertures distributed among the radially outer number of rings. The apertures may have uniform or staggered spacing and be spaced no more than about 10 mm from center to center. The apertures may be spaced no more than about 9 mm, no more than about 8 mm, no more than about 7 mm, no more than about 6 mm, no more than about 5 mm, no more than about 4 mm, no more than about 3 mm, or even less.

[0043]

[0049] The rings may be characterized by any contour, as described above, and in some embodiments, the apertures may be characterized by a scaling function of the number of apertures per ring. For example, in some embodiments, the first aperture may penetrate the center of the faceplate, such as along a central axis. The first ring of apertures may extend around the central aperture and may include any number of apertures, such as between about 4 and about 10 apertures, which may be equally spaced around a contour that penetrates the center of each aperture. Any number of additional rings of apertures may extend radially outward from the first ring and may include a number of apertures that may be a function of the number of apertures in the first ring. For example, the number of apertures in each successive ring may be characterized by the number of apertures in each corresponding ring according to the formula XR, where X is the base number of apertures and R is the corresponding ring number. The base number of apertures may be the number of apertures in the first ring, or in some embodiments, may be other numbers, as described further below when the first ring has an increased number of apertures. For example, in an exemplary faceplate having five apertures distributed around a first ring, where five is the base number of apertures, the second ring may be characterized by 10 apertures, (5) x (2), the third ring may be characterized by 15 apertures, (5) x (3), and the twentieth ring may be characterized by 100 apertures, (5) x (20). This may continue for any number of rings of apertures, such as up to, more than, or about 50 rings, as previously described. In some embodiments, each aperture of a plurality of apertures across the faceplate may be characterized by an aperture profile, which may be the same or different in embodiments of the present technology. For example, the aperture profile may be cylindrical, as shown, or may be generally frusto-conical in shape. In some embodiments, the aperture profile of some or all of the apertures may include multiple cylindrical and / or conical sections and may include one or more choke regions. The aperture profile may be the same for each of the apertures or may be different in various embodiments.

[0044]

[0050] Body 410 may house several components for faceplate 400. In particular, body 410 may house upper (or first) RF mesh 420, second (or lower) RF mesh 430, heater 460, support 440, and / or conduit 450. As shown, body 410 may entirely house meshes 420, 430, heater 460, support 440, and / or conduit 450. However, in other embodiments, at least a portion of one or more components may not be completely housed within body 410.

[0045]

[0051] The heater 460 may be embedded within the body 410, as described above. The heater 460 may include one or more conductive plates and / or coils used to heat the faceplate 400. For example, in some embodiments, the heater 460 may include one or more coils and / or other heating elements that may extend through a portion of the central space 470. For example, the coils may have a helical shape extending radially outward from the center of the faceplate 400 in some embodiments, while in other embodiments, the coils may have other recursive shapes. In other embodiments, the heater 460 may include one or more generally disc-shaped plates that at least substantially (e.g., greater than 90%, greater than 95%, greater than 97%, greater than 99%, etc.) fill, extend across, and / or otherwise span the cross-sectional area of ​​the faceplate 400. The heater 460 may be coupled to a power source, such as an AC power source, to supply current to the heater 460 to increase the temperature of the faceplate 400 and the gas flowing therethrough. The heater 460 may have a circumferential area and / or diameter substantially similar to the interior of the body 410 such that the heater 460 applies a substantially uniform heat distribution to the components within the body 410. However, in other embodiments, the heater may have a smaller circumferential area and / or diameter than the interior of the body 410 (e.g., when there are multiple heaters).

[0046]

[0052] As described above, the body 410 may include and / or define one or more conduits 450. In some embodiments, the conduits 450 may include one or more recursive shapes extending from the center of the faceplate 400 toward the periphery of the central space 470. For example, the conduits 450 may include a spiral shape, several concentric rings, and / or other shapes that may be used to distribute one or more gases about an area of ​​the faceplate 400. Each of the conduits 450 may include and / or be fluidly connected to several channels 451 extending between the conduit 450 and a respective one of the apertures 403. In this manner, one or more gases may flow through the conduits 450, the channels 451, and exit the faceplate 400 via the apertures 403. In some applications, RF power may be supplied to the faceplate 400 and the pedestal to strike a plasma of one or more gases in a processing region of the processing chamber. Although the conduit 450 is shown as having a rectangular cross-section, it is understood that in other embodiments, the cross-section of the conduit 450 may have other shapes (eg, circular).

[0047]

[0053] The first RF mesh 420 and the second RF mesh 430 may be positioned on opposite sides of the heater 460. In certain embodiments, each RF mesh 420, 430 may be positioned approximately 1 mm to 10 mm, 2 mm to 9 mm, 3 mm to 8 mm, 4 mm to 7 mm, or 5 mm to 6 mm from the nearest respective surface (e.g., the first surface 401 or the second surface 402), the spacing being determined by the thickness of the body 410 in some embodiments. The periphery of the RF meshes 420, 430 may extend radially outward to a distance equal to or greater than the heater 460, thereby connecting the RF meshes 420, 430 to completely surround the body of the heater 460. For example, several vias 442 may be used to connect the RF meshes 420, 430. The vias or posts 442 may extend directly between the RF meshes 420, 430, or may extend between one of the RF meshes 420, 430 and one or more intervening components. For example, as shown in FIG. 5 , a first via 442a may extend between and connect the second RF mesh 430 and the reinforcing pad or flange 443. A second via 442d may extend between and connect the reinforcing pad or flange 443 and the reinforcing pad or flange 441. A third via 442b may extend between and connect the reinforcing pad or flange 441 and the heater 460. A fourth via 442a may extend between and connect the heater 460 and the first RF mesh 420. In this manner, the two RF meshes 420, 430 may be connected. It will be appreciated that more, fewer, and / or different intervening connections may be made to link the two RF meshes 420, 430.

[0048]

[0054] The first and second RF meshes 420, 430, the vias 442, the heater 460, and the flanges 441, 443 may be made of a conductive material such that the meshes 420, 430 form a Faraday cage surrounding the conductive heater 460. The Faraday cage may help contain electric fields generated during processing operations (e.g., from the heater 460 and / or from RF fields between the faceplate 400 and a pedestal used to strike a plasma in the processing region) to the area below the faceplate 400. The reduced electric field above the faceplate 400 may help reduce or eliminate the generation of parasitic plasma above the faceplate 400. The RF meshes 420, 430 may define openings 421, 431, respectively, sized to form a mesh structure to form the Faraday cage. The openings 421, 431 may further be sized to allow components to pass through the meshes 420, 430. For example, the openings 431 can be sized and / or positioned to allow at least a portion of the channels 451 to pass through the mesh 430. In this manner, one or more gases can pass through the RF meshes 420, 430 to be delivered to the processing region.

[0049]

[0055] Additionally, the RF meshes 420, 430 may have a circumferential area substantially similar to the interior of the body 410, such that the meshes 420, 430 form a Faraday cage having a circumferential area substantially similar to the interior of the body 410, and therefore approximately the same as the circumferential area of ​​the faceplate 400. The size of this Faraday cage may help prevent charge on one side of the faceplate 400 from passing through to the other side. For example, when the faceplate 400 is assembled in a substrate processing system, the Faraday cage created by the meshes 420, 430 may help prevent charge created below the faceplate 400 (e.g., between the faceplate 400 and a pedestal (which acts as an electrode) during a capacitively coupled plasma process) from seeping into components of the substrate processing system above the faceplate 400. This prevention of charge helps reduce or minimize the formation of a parasitic plasma above the faceplate 400.

[0050]

[0056] The position of the components of face plate 400 within body 410 may be reinforced by supports 440. Support 440 may include an upper (or first) flange or pad 441, a lower (or second) flange or pad 443, and vias or posts 442 extending between flanges 441, 443. Support 440 may be integrally formed such that flanges 441, 443 and posts 442 are integral with one another. Alternatively, flanges 441, 443 and posts 442 may be constructed separately before being engaged with one another (e.g., by welding, etc.).

[0051]

[0057] Flanges 441, 443 may be engaged to body 410 (e.g., by welding, etc.) such that any other components engaged to flanges 441, 443 may likewise be supported by body 410. For example, flanges 441, 443 may be engaged to conduit 450 to support the position of conduit 450. In particular, upper flange 441 may be engaged to an upper surface of conduit 450, and lower flange 443 may be engaged to a lower surface of conduit 450. In this manner, the position of conduit 450 may be supported by flanges 441, 443 and their connections to body 410.

[0052]

[0058] 5, posts 442 are shown extending from flanges 441, 443 toward other components within body 410 to support the position of those components. For example, post 442A extends from lower flange 443 to engage lower mesh 430. Additionally, post 442B extends from upper flange 441 to engage heater 460. A separate post 442C may extend from heater 460 to upper mesh 420. Posts 442A, 442B, 442C, 442D may be engaged to corresponding components by welding, etc. Thus, the position of meshes 420, 430 and heater 460 may be supported by their respective connections to posts 442A, 442B, 442C, 442D, the connections between posts 442A, 442B, 442C, 442D and flanges 441, 443, and the connections between flanges 441, 443 and body 410.

[0053]

[0059] In other embodiments, there may be additional flanges connecting at least one of the heater and mesh to the body. For example, the heater and mesh may each include their own pair of flanges for connecting each component to the body. Alternatively, the conduit is not engaged with a flange; instead, either the mesh or the heater is engaged with a flange, which is in turn engaged with the body. As a further alternative, struts extending from the upper flange are integral in construction, with their ends engaging the upper mesh and upper flange. In this example, the struts may pass through the heater, and the heater may be secured to the middle of the struts.

[0054]

[0060] The support 440 may be made of a conductive material, such as tungsten, and may thus form part of a Faraday cage together with the meshes 420, 430.

[0055]

[0061] The body 410 may be made of an insulating material, such as a ceramic, which may have a higher coefficient of thermal expansion than a conductor, such as aluminum. Suitable ceramics may include, for example, aluminum nitride and / or aluminum oxide. The higher coefficient of thermal expansion may allow the faceplate 400 to be used in high temperature processing and cleaning operations, such as operations involving operating temperatures of 250°C, 300°C, 350°C, 400°C, 450°C, 500°C, 550°C, 600°C, or higher.

[0056]

[0062] While faceplate 400 may provide a substantial reduction in electrical charge to areas of the processing system above faceplate 400, additional protection from electrical charge may be desired. Figure 6 shows an exemplary faceplate 400', which may be similar to faceplate 400, except as described below. In this embodiment, features having similar reference numbers to features described above are similar, except as described below. Each of posts 442C' may include a portion 444' of conductive material that extends beyond upper mesh 420' and upper surface 401'.

[0057]

[0063] Each portion 444' includes an end 445' coupled to a grounding component 500' (e.g., a strap), which may be coupled to the chamber body and / or lid stack components. The grounding component 500' may assist in dissipating electrical charge within the faceplate 400. Because the posts 442C' may form part of a Faraday cage, grounding the portions 444' may assist in eliminating electrical charge in the Faraday cage. This grounding may further minimize the risk of electrical charge seeping above the faceplate 400'.

[0058]

[0064] The sleeve 475' may circumferentially surround the portion 444' to prevent the portion 444' from being exposed to any process gases that could damage the portion 444'. The sleeve 475' may be made of an insulating material, such as ceramic.

[0059]

[0065] Although the foregoing description, for purposes of explanation, sets forth numerous details in order to provide an understanding of various embodiments of the present technology, it will be apparent to one skilled in the art that particular embodiments may be practiced without some of these details or with additional details.

[0060]

[0066] Although several embodiments have been disclosed, those skilled in the art will recognize that various modifications, alternative structures, and equivalents may be used without departing from the essence of the embodiments. Additionally, some well-known processes and elements have not been described to avoid unnecessarily obscuring the present technology. Therefore, the above description should not be construed as limiting the scope of the present technology. Furthermore, while a method or process may be described sequentially or in steps, it should be understood that the operations may be performed simultaneously or in an order different from that listed.

[0061]

[0067] Where a range of values ​​is provided, each intervening value between the upper and lower limit of that range is also understood to be specifically disclosed, to the smallest unit of the lower limit (unless the context clearly dictates otherwise). Narrower ranges between any stated or unstated intervening values ​​in a stated range, as well as all other stated or intervening values ​​in that stated range, are encompassed. The upper and lower limits of such narrower ranges may individually be included or excluded within that range. Each range where either, neither, or both limits are included within this narrower range is also encompassed within the technology, even though there may be specifically excluded limits within the stated range. When a stated range includes one or both of the limits, ranges excluding either or both of those included limits are also included.

[0062]

[0068] As used in this specification and the appended claims, the singular forms "a," "an," and "the" include the plural references (unless the context clearly dictates otherwise). Thus, for example, a reference to "a plate" includes a plurality of such plates, a reference to "the aperture" includes a reference to one or more apertures and equivalents known to those skilled in the art, and so forth.

[0063]

[0069] Furthermore, the words "comprise(s) / comprising", "contain(s) / containing", and "include(s) / including", when used in this specification and the claims that follow, are intended to specify the presence of stated features, integers, components, or steps, but do not exclude the presence or addition of one or more other features, integers, components, steps, operations, or groups.

[0064]

[0070] Directional references such as "up," "upper," "lower," "down," "top," "left," "right," "bottom," etc. are not intended to be limiting, but instead to refer to the orientation as shown and described in the figure (or figures) in which the components and directions are referenced.

Claims

1. 1. A faceplate for a semiconductor processing chamber, comprising: a body having a first surface and a second surface opposite the first surface, the body defining a plurality of apertures through one or both of the first surface and the second surface; a heater disposed inside the body; a first RF mesh disposed between the heater and the first surface; a second RF mesh disposed between the heater and the second surface; and wherein the first RF mesh and the second RF mesh are coupled together to form a Faraday cage around the heater.

2. further comprising one or more conduits disposed within the body; The semiconductor processing chamber faceplate of claim 1 , wherein the one or more conduits are in fluid communication with the plurality of apertures.

3. The semiconductor processing chamber faceplate of claim 2 , wherein the one or more conduits form a retro-reflective pattern that distributes gas radially outward around the area of ​​the faceplate.

4. 10. The semiconductor processing chamber faceplate of claim 1, wherein the body comprises first posts that secure the heater to a first conductive mesh.

5. 5. The semiconductor processing chamber faceplate of claim 4, wherein said body includes second posts that secure said heater to a second conductive mesh.

6. The semiconductor processing chamber faceplate of claim 4 , wherein a portion of the first post penetrates the first surface of the body.

7. 7. The semiconductor processing chamber faceplate of claim 6, wherein an insulating sleeve circumferentially surrounds said portion of said first post.

8. The semiconductor processing chamber faceplate of claim 7 , wherein the insulating sleeve comprises a ceramic material.

9. 7. The semiconductor processing chamber faceplate of claim 6, wherein said portion of said first post is coupled to a ground RF strap.

10. The semiconductor processing chamber faceplate of claim 1 , wherein the body is made of a ceramic material.

11. 1. A faceplate for a semiconductor processing chamber, comprising: a ceramic body having a first surface and a second surface opposite the first surface, the body defining a plurality of apertures through one or both of the first surface and the second surface; a heater disposed inside the body; a Faraday cage disposed within the body and formed around the heater; 1. A faceplate for a semiconductor processing chamber comprising:

12. the Faraday cage comprises a first RF mesh; 12. The semiconductor processing chamber faceplate of claim 11, wherein said faceplate further comprises first posts that secure said heater to said first RF mesh.

13. the Faraday cage comprises a second RF mesh; 13. The semiconductor processing chamber faceplate of claim 12, wherein said faceplate further comprises second posts that secure said heater to said second RF mesh.

14. 12. The semiconductor processing chamber faceplate of claim 11, wherein the plurality of apertures extend only through the second surface of the body.

15. a shaft coupled to the body and including a ground rod; 15. The semiconductor processing chamber faceplate of claim 14, further comprising:

16. The semiconductor processing chamber faceplate of claim 14 , wherein an edge of the body comprises an RF grounding strap.

17. 1. A semiconductor processing chamber comprising: a chamber body defining a processing chamber; a substrate support disposed within the processing chamber; a faceplate positioned on the chamber body; the face plate is characterized by a first surface and a second surface opposite the first surface, the second surface facing the substrate support; the faceplate defines a plurality of apertures extending through one or both of the first surface and the second surface; a heater disposed within the faceplate; a first RF mesh disposed between the heater and the first surface; a second RF mesh disposed between the heater and the second surface; The semiconductor processing chamber, wherein the first RF mesh and the second RF mesh are coupled together to form a Faraday cage around the heater.

18. 20. The semiconductor processing chamber of claim 17, wherein an edge of the faceplate comprises a grounding component coupled to at least one lid stack component.

19. 20. The semiconductor processing chamber of claim 18, wherein the grounding component is coupled to the Faraday cage.

20. a grounding component coupled to the Faraday cage via a post passing through the first surface; 20. The semiconductor processing chamber of claim 17, wherein a portion of the post extending outwardly from the faceplate comprises a ceramic sleeve.

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