Conditional operation in quantum object confinement devices using broadcasted control voltage signals

The quantum object confinement device with switchable and broadcast control electrodes addresses the complexity of large-scale QCCD systems by enabling efficient conditional operations with a reduced number of control voltage sources, simplifying the infrastructure for controlling multiple trapping regions.

JP2025536264APending Publication Date: 2025-11-05QUANTINUUM LLC
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Patent Information

Application Number
JP2025520942
Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
Priority Date
2023-09-18
Filing Date
2023-10-05
Publication Date
2025-11-05

AI Technical Summary

Technical Problem

Conventional quantum charge-coupled device (QCCD)-based quantum systems face challenges in scaling the number of confined quantum objects due to the complexity and size of the confinement device, which necessitates a large number of control electrodes and complex infrastructure for supplying voltage signals.

Method used

A quantum object confinement device with a periodic or quasi-periodic array of trapping regions uses switchable control electrodes and broadcast control electrodes, allowing independent control of potential within each trapping region through a reduced number of control voltage sources and switches, enabling conditional operations without scaling the total number of voltage sources.

Benefits of technology

This approach simplifies the infrastructure by allowing independent control of trapping regions with a scalable number of control voltage sources, facilitating efficient conditional operations in large-scale quantum systems.

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Abstract

A quantum object confinement device is provided that is configured to perform a conditional action using a broadcast voltage signal. In an exemplary embodiment, the confinement device comprises one or more electrode sequences, each including a respective plurality of control electrodes configured to control an electrical potential within a respective one of one or more trapping regions of the confinement device. A first switchable control electrode of the respective plurality of control electrodes is configured to be in switchable electrical communication with a respective selected one of two or more switchable control voltage sources.
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Description

[Technical Field]

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS This application claims priority to U.S. Application No. 18 / 468,892, filed September 18, 2023, U.S. Application No. 63 / 481,665, filed January 26, 2023, and U.S. Application No. 63 / 379,040, filed October 11, 2022, the contents of which are incorporated herein by reference in their entireties.

[0002] Various embodiments relate to devices, systems, and methods related to controlling quantum objects within a quantum object confinement apparatus. For example, some exemplary embodiments relate to performing conditional actions on quantum objects confined by a periodic or quasi-periodic arrangement of trapping regions in a quantum object confinement apparatus. [Background technology]

[0003] Quantum charge-coupled device (QCCD)-based quantum systems have been shown to be usable for performing quantum computations using a small number of quantum objects. However, to increase the number of quantum objects confined by the confinement device of a QCCD-based quantum system, the size of the confinement device must also be increased. Increasing the size of the confinement device necessitates an increase in the number of control electrodes of the confinement device. The infrastructure for supplying voltage signals to each of the control electrodes quickly becomes large and complex. Thus, through a commitment of effort, ingenuity, and innovation, many deficiencies in such previous confinement devices and methods of operation have been overcome by developing structured solutions in accordance with embodiments of the present invention, many examples of which are described in detail herein. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] U.S. Application No. 17 / 910,082 Summary of the Invention [Problem to be solved by the invention]

[0005] Exemplary embodiments provide methods, systems, devices, computer program products, and / or the like for performing conditional operations on quantum objects trapped by a trapping device having a periodic or quasi-periodic array of trapping regions or multiple trapping regions with similar and / or common structures. In various embodiments, the potential within each trapping region is defined by a respective electrode sequence including a respective plurality of control electrodes. Each electrode sequence includes a respective plurality of control electrodes including one or more switchable control electrodes. The one or more switchable control electrodes include a first switchable control electrode and, optionally, a second switchable control electrode. The first switchable control electrode and, optionally, the second switchable control electrode are configured to be in switchable electrical communication with a first switchable control voltage source or a second switchable control voltage source of a plurality of control voltage sources. For example, in one exemplary embodiment, at any particular time, the first switchable control electrode is in electrical communication with exactly one of the first switchable control voltage source or the second switchable control voltage source. The switchable configurations of the first and second switchable control electrodes in each trapping region of the periodic or quasi-periodic array of trapping regions, or in multiple trapping regions having similar and / or common structures, are independently controllable, allowing for the conditional execution of an operation in one or more trapping regions while preventing the execution of an operation in other trapping regions. [Means for solving the problem]

[0006] According to a first aspect, there is provided a quantum object confinement device, such as a quantum object confinement device, configured to perform a conditional operation using a broadcasted voltage signal. In an exemplary embodiment, the quantum object confinement device comprises one or more electrode sequences, each including a respective plurality of control electrodes. Each of the respective plurality of control electrodes is configured to control a potential within a respective trapping region of one or more trapping regions of the quantum object confinement device. A first switchable control electrode and, optionally, a second switchable control electrode of the one or more switchable control electrodes of each of the respective plurality of control electrodes are each configured to be in switchable electrical communication with a respective selected switchable control voltage source of two or more switchable control voltage sources.

[0007] In an exemplary embodiment, each of the plurality of control electrodes further comprises one or more broadcast control electrodes each configured to be in electrical communication with a respective broadcast control voltage source of the one or more broadcast control voltage sources.

[0008] In an exemplary embodiment, the one or more electrode sequences each include a respective plurality of control electrodes, and one or more broadcast control electrodes of the respective plurality of control electrodes are configured to be in electrical communication with a respective control voltage source of the one or more broadcast control voltage sources, e.g., a broadcast control voltage source of the one or more broadcast control voltage sources is in electrical communication with a respective broadcast control electrode of each of several electrode sequences of the plurality of electrode sequences.

[0009] In an exemplary embodiment, the number of broadcast control voltage sources scales and / or is proportional to the number of independent broadcast control electrodes in each of the plurality of control electrodes, and does not scale with the total number of control electrodes.

[0010] In an exemplary embodiment, the quantum object confinement device further comprises one or more switches, each electrode sequence associated with a respective switch of the one or more switches, each switch configured to control switching between two or more switch positions, each switch position of the two or more switch positions configured to cause a first switchable control electrode to be in electrical communication with a selected control voltage source of the two or more selectable control voltage sources, and optionally cause a second switchable control electrode of the one or more switchable control electrodes to be in electrical communication with a different control voltage source of the two or more selectable control voltage sources.

[0011] In one exemplary embodiment, each switch is a double-pole, double-throw switch.

[0012] In one exemplary embodiment, each switch is configured to be controlled by a respective switch signal.

[0013] In an exemplary embodiment, each switch signal is a digital signal.

[0014] In an exemplary embodiment, the one or more electrode sequences include a plurality of electrode sequences, the one or more switches include a plurality of switches, and each switch of the plurality of switches is independently controlled.

[0015] In an exemplary embodiment, each trapping region of the one or more trapping regions is a circular path trapping region, the plurality of voltage control signals are divided into two subsets of voltage signals, labeled an L partition and an R partition, and each of the plurality of control electrodes is configured to: (a) when a first switchable control electrode is in electrical communication with a first switchable control voltage source, the plurality of control electrodes are in electrical communication with the L voltage signal partition, one signal in the L voltage signal partition corresponds to each control electrode of the plurality of control electrodes, causing one or more potential wells formed by each of the plurality of control electrodes to move around the circular path trapping region in a first direction; and (b) when the first switchable control electrode is in electrical communication with a second switchable control voltage source, the plurality of control electrodes are configured to be in electrical communication with the R voltage signal partition, causing one or more potential wells formed by each of the plurality of control electrodes to move around the circular path trapping region in a second direction.

[0016] According to another aspect, a quantum system is provided. The system includes a first switchable control voltage source configured to generate a first switchable control voltage signal, a second switchable control voltage source configured to generate a second switchable control voltage signal, and a quantum object confinement device including one or more electrode sequences. Each electrode sequence includes a respective plurality of control electrodes configured to control a potential within a respective one of one or more trapping regions of the quantum object confinement device. The first and second switchable control electrodes of each of the respective plurality of control electrodes are each in switchable electrical communication with a respective selected one of two or more switchable control voltage sources, and are configured such that a respective selected one of the two or more switchable control voltage signals is applied to the first and second switchable control electrodes. The system further includes a controller configured to control operation of each of the two or more switchable control voltage sources and with which of the two or more switchable control voltage sources each of the first and second switchable control electrodes is in electrical communication.

[0017] In an exemplary embodiment, the system further comprises one or more broadcast control voltage sources each configured to generate a respective broadcast control voltage signal, each of the plurality of control electrodes further comprising one or more broadcast control electrodes in electrical communication with a respective broadcast control voltage source of the one or more broadcast control voltage sources and each configured to apply a respective broadcast control voltage signal to a respective of the plurality of control electrodes.

[0018] In an exemplary embodiment, the one or more electrode sequences include a plurality of electrode sequences, and one or more broadcast control electrodes of the plurality of control electrodes of each of the plurality of electrode sequences are configured to be in electrical communication with one or more broadcast control voltage sources.

[0019] In an exemplary embodiment, the number of broadcast control voltage sources is not proportional to the number of independent control electrodes in the respective plurality of control electrodes and / or is not proportional to the number of electrode sequences.

[0020] In an exemplary embodiment, the quantum object confinement device further comprises one or more switches, each electrode sequence associated with a respective switch of the one or more switches, each switch configured to control switching between two or more switch positions, each switch position of the two or more switch positions configured to cause a first switchable control electrode to be in electrical communication with a selected control voltage source of the two or more selectable control voltage sources and to cause a second switchable control electrode to be in electrical communication with a different control voltage source of the two or more selectable control voltage sources.

[0021] In one exemplary embodiment, each switch is a double-pole, double-throw switch.

[0022] In an exemplary embodiment, the system further includes one or more switch signal generators, wherein the controller is configured to control operation of the one or more switch signal generators, each switch being configured to be controlled by a respective switch signal generated by a respective switch signal generator of the one or more switch signal generators.

[0023] In one exemplary embodiment, each switch signal is a digital signal.

[0024] In an exemplary embodiment, the one or more electrode sequences include a plurality of electrode sequences, the one or more switches include a plurality of switches, the one or more switch signal generators include a plurality of switch signal generators, and the controller is configured to independently control operation of each switch signal generator of the plurality of switch signal generators.

[0025] In an exemplary embodiment, each trapping region of the one or more trapping regions is a circular path trapping region, the plurality of voltage control signals are divided into two subsets of voltage signals labeled an L partition and an R partition, and each of the plurality of control electrodes is configured to: (a) when a first switchable control electrode is in electrical communication with a first switchable control voltage source, the plurality of control electrodes are in electrical communication with the L voltage signal partition, one signal in the L voltage signal partition corresponds to each control electrode of the plurality of control electrodes, causing one or more potential wells formed by each of the plurality of control electrodes to move around the circular path trapping region in a first direction; and (b) when the first switchable control electrode is in electrical communication with a second switchable control voltage source, the plurality of control electrodes are configured to be in electrical communication with the R voltage signal partition, causing one or more potential wells formed by each of the plurality of control electrodes to move around the circular path trapping region in a second direction.

[0026] According to another aspect, a quantum system is provided. In one exemplary embodiment, the system includes a first switchable control voltage source configured to generate a first switchable control voltage signal, a second switchable control voltage source configured to generate a second switchable control voltage signal, a plurality of broadcast control voltage sources each configured to generate a respective broadcast control voltage signal, and a quantum object confinement device including a plurality of electrode sequences. Each electrode sequence includes a respective plurality of control electrodes configured to control a potential within a respective one of a plurality of trapping regions of the quantum object confinement device. Each of the plurality of control electrodes includes a first switchable control electrode, a second switchable control electrode, and a plurality of broadcast control electrodes. The first switchable control electrode and the second switchable control electrode are each configured to switchably communicate with a respective selected one of two or more switchable control voltage sources applied thereto. Each of the plurality of broadcast control electrodes is in electrical communication with a respective one of the plurality of broadcast control voltage sources, such that each broadcast control voltage source is in electrical communication with a respective one of the at least two electrode sequences. The system further comprises a controller configured to control operation of each of the two or more switchable control voltage sources and with which of the two or more switchable control voltage sources each of the first switchable control electrode and the second switchable control electrode, respectively, is in electrical communication.

[0027] In an exemplary embodiment, the system further comprises a plurality of switch signal generators, each configured to generate a respective switch signal. The quantum object confinement device further comprises a plurality of switches, and each electrode sequence is associated with a respective switch of the plurality of switches. Each switch is configured to control switching between two or more switch positions, each of the two or more switch positions being configured to cause a first switchable control electrode to be in electrical communication with a selected control voltage source of the two or more selectable control voltage sources and, optionally, to cause a second switchable control electrode to be in electrical communication with a different control voltage source of the two or more selectable control voltage sources. Each switch is configured to be controlled by a respective switch signal generated by a respective switch signal generator of the plurality of switch signal generators. The controller is configured to independently control the operation of each of the plurality of switch signal generators.

[0028] In one exemplary embodiment, the controller is configured to cause the execution of the conditional action in the subset of the plurality of trapping regions at least in part by controlling the operation of a plurality of switch signal generators, such that (a) for each electrode sequence whose corresponding trapping region is part of the subset of the plurality of trapping regions for which the conditional action is to be executed, the respective switch is in a first switch position of the two or more switch positions, and (b) for each electrode sequence whose corresponding trapping region is not part of the subset of the plurality of trapping regions for which the conditional action is to be executed, the respective switch is in a second switch position of the two or more switch positions.

[0029] In one exemplary embodiment, the plurality of trapping regions are one-dimensional trapping regions, and executing the conditional action within a subset of the plurality of trapping regions includes moving quantum objects between respective initial positions and respective final positions.

[0030] In an exemplary embodiment, the respective initial positions include at least one of (a) respective positions along respective trapping regions of a subset of the plurality of trapping regions, or (b) respective junctions linking the respective trapping regions or enabling transport of quantum objects between the respective trapping regions.

[0031] In an exemplary embodiment, the respective final locations include at least one of (a) a respective position along a respective trapping region of a subset of the plurality of trapping regions, or (b) a respective junction linking the respective trapping regions or enabling transport of quantum objects between the respective trapping regions.

[0032] In one exemplary embodiment, the controller is configured to control operation of the first switchable control voltage source, the second switchable control voltage source, the plurality of broadcast control voltage sources, and the plurality of switch signal generators such that a set of one or more respective quantum objects trapped within each trapping region moves along the respective trapping region in (a) a first direction when the respective switch is in a first position, and (b) a second direction when the respective switch is in a second position.

[0033] In an exemplary embodiment, the controller is configured to identify an operation to be performed, identify one or more trapping regions of the plurality of trapping regions in which the operation should be performed, determine a respective switch position for each trapping region of the plurality of trapping regions based on whether the operation should be performed within the respective trapping region, control operation of the plurality of switch signal generators based on the respective switch position determined for each trapping region of the plurality of trapping regions, and control operation of the first switchable control voltage source, the second switchable control voltage source, and the plurality of broadcast control voltage sources to enable execution of the operation within the one or more trapping regions in which the operation should be performed.

[0034] In an exemplary embodiment, the controller is further configured to control operation of the first switchable control voltage source, the second switchable control voltage source, and the plurality of broadcast control voltage sources to prevent execution of an operation within a trapping region of the plurality of trapping regions where the operation should not be executed.

[0035] In an exemplary embodiment, the system further comprises a first shim voltage source configured to generate a first shim signal having a first dynamic value and a second shim voltage source configured to generate a second shim signal having a second dynamic value. In an exemplary embodiment, the second dynamic value is equal to the first dynamic value multiplied by negative 1. The quantum object confinement device further comprises respective shim electrodes (a) each associated with a respective trapping region of the plurality of trapping regions and (b) each in switchable electrical communication with one of the first shim voltage source and the second shim voltage source.

[0036] In an exemplary embodiment, the quantum object confinement device of the system further comprises a respective shim electrode each associated with a respective trapping region of the plurality of trapping regions, and the shim voltage source is configured to apply a shim voltage to the respective shim electrode configured to induce a stray electric field and / or a resulting electric field that corrects for manufacturing defects.

[0037] In one exemplary embodiment, the shim electrode is in electrical communication with a capacitor, which is in electrical communication with a switch that allows the capacitor to be switched between (a) being in electrical communication with the shim voltage source and (b) not being in electrical communication with the shim voltage source.

[0038] In one exemplary embodiment, applying a shim voltage source to the shim electrode includes closing a switch to place a capacitor in electrical communication with the shim voltage source and causing the capacitor to charge to the shim voltage, and opening the switch to cause the capacitor to maintain the shim voltage.

[0039] In an exemplary embodiment, the controller is configured to identify an operation to be performed, identify one or more trapping regions of the plurality of trapping regions in which the operation should be performed, determine a sign of a respective shim signal for each trapping region of the plurality of trapping regions based on whether the operation should be performed within the respective trapping region, determine whether the sign of the respective shim signal for the respective trapping region determines whether a respective shim electrode of the respective trapping region is in electrical communication with the first shim voltage source or the second shim voltage source, control operation of the plurality of switch signal generators based on the determined sign of the respective shim signal for each trapping region of the plurality of trapping regions, and control operation of the first switchable control voltage source, the second switchable control voltage source, and the plurality of broadcast control voltage sources to enable execution of the operation within the one or more trapping regions in which the operation should be performed.

[0040] In one exemplary embodiment, the controller is configured to cause execution of a conditional action in each of a first subset of the plurality of trapping regions and to prevent execution of the conditional action in each of a second subset of the plurality of trapping regions.

[0041] In an exemplary embodiment, the conditional operation is at least one of a junction swap operation, a linear swap operation, a partial row or column shift, sorting any quantum object, gating one or more quantum objects, cooling a quantum object, measuring a quantum object, initializing a quantum object, swapping the positions of quantum objects located within the same trapping region, or other transport or non-transport operations.

[0042] In an exemplary embodiment, the plurality of trapping regions forms a periodic or quasi-periodic array of trapping regions.

[0043] In one exemplary embodiment, the multiple broadcast control voltage sources include a first set of broadcast control voltage sources and a second set of broadcast control voltage sources, and the multiple broadcast control electrodes of a given electrode sequence are in selective electrical communication with respective broadcast control voltage sources of the first set of broadcast control voltage sources or the second set of broadcast control voltage sources, thereby reducing crosstalk between some electrode sequences of the multiple electrode sequences or achieving conditional operation, and having more than two switchable control electrodes may simplify operation by reducing maximum voltage levels in circuit trapping regions, etc., when selecting a first direction of rotation or a second direction of rotation.

[0044] In an exemplary embodiment, a given electrode sequence is in selective electrical communication with each broadcast control voltage source of the first set of broadcast control voltage sources or the second set of broadcast control voltage sources based on at least one of (a) the switch position of each switch of the given electrode sequence, or (b) the switch position of each switch of an adjacent electrode sequence.

[0045] In one exemplary embodiment, the trapping region of a given electrode sequence and the trapping region of an adjacent electrode sequence are joined to one another via a junction.

[0046] According to another aspect, a controller configured to control operation of a quantum system is provided. The quantum system includes a quantum object confinement device including a first switchable control voltage source, a second switchable control voltage source, a plurality of broadcast control voltage sources, and a plurality of electrode sequences each defining a respective trapping region. Each electrode sequence of the plurality of electrode sequences includes a first switchable control electrode configured to switchably communicate with a selected control voltage source of the two or more switchable control voltage sources and a plurality of broadcast control electrodes each configured to communicate with a respective broadcast control voltage source of the plurality of broadcast control voltage sources. The controller is configured and / or programmed to control operation of each of the two or more switchable control voltage sources and the plurality of broadcast control voltage sources such that each quantum object disposed in a first subset of the plurality of trapping regions is moved along its respective trapping region in a first direction and each quantum object disposed in a second subset of the plurality of trapping regions is moved along its respective trapping region in a second direction. The plurality of broadcast control electrodes corresponding to the trapping regions in the first subset of trapping regions are in electrical communication with the same plurality of broadcast control voltage sources as the plurality of broadcast control electrodes corresponding to the trapping regions in the second subset of trapping regions.

[0047] In an exemplary embodiment, first switchable control electrodes corresponding to trapping regions in the first subset of trapping regions are in electrical communication with the same control voltage source, either the first switchable control voltage source or the second switchable control voltage source.

[0048] In an exemplary embodiment, first switchable control electrodes corresponding to trapping regions in a first subset of trapping regions are in electrical communication with the opposite control voltage source, either the first switchable control voltage source or the second switchable control voltage source, relative to first switchable control electrodes corresponding to trapping regions in a second subset of trapping regions.

[0049] In one exemplary embodiment, the quantum system further comprises a first shim voltage source configured to generate a first shim signal having a first dynamic value and a second shim voltage source configured to generate a second shim signal having a second dynamic value. In one exemplary embodiment, the second dynamic value is equal to the first dynamic value multiplied by negative 1. The quantum object confinement device further comprises respective shim electrodes (a) each associated with a respective trapping region of the plurality of trapping regions and (b) each in switchable electrical communication with one of the first shim voltage source and the second shim voltage source, wherein shim electrodes corresponding to trapping regions in a first subset of the trapping regions are in electrical communication with the same shim voltage source of the first shim voltage source or the second shim voltage source.

[0050] In an exemplary embodiment, the quantum system further comprises a first shim voltage source configured to generate a first shim signal having a first dynamic value and a second shim voltage source configured to generate a second shim signal having a second dynamic value. In an exemplary embodiment, the second dynamic value is equal to the first dynamic value multiplied by negative one. The quantum object confinement device further comprises respective shim electrodes (a) each associated with a respective trapping region of the plurality of trapping regions and (b) each in switchable electrical communication with one of the first shim voltage source and the second shim voltage source, wherein shim electrodes corresponding to trapping regions in a first subset of the trapping regions are in electrical communication with different shim voltage sources, either the first shim voltage source or the second shim voltage source, relative to shim electrodes corresponding to trapping regions in a second subset of the trapping regions.

[0051] In an exemplary embodiment, the plurality of trapping regions forms a periodic array of trapping regions or a quasi-periodic array of trapping regions.

[0052] According to yet another aspect, a quantum system is provided. The system includes a first switchable control voltage source configured to generate a first switchable control voltage signal, a second switchable control voltage source configured to generate a second switchable control voltage signal, a plurality of broadcast control voltage sources each configured to generate a respective broadcast control voltage signal, and a quantum object confinement device including one or more electrode sequences. Each electrode sequence includes a respective plurality of broadcast control electrodes and a respective shim electrode configured to control a potential within a respective one of one or more trapping regions of the quantum object confinement device. The shim electrodes are configured to be in switchable electrical communication with a respective selected one of the two or more switchable control voltage sources, and to apply a respective selected one of the two or more switchable control voltage signals to the shim electrode. Each of the broadcast control electrodes is configured to be in electrical communication with a respective one of the plurality of broadcast control voltage sources. The system further includes a controller configured to control operation of each of the two or more switchable control voltage sources and with which of the two or more switchable control voltage sources the shim electrode is in electrical communication.

[0053] According to yet another aspect, there is provided a method, executed by a controller of a quantum system, for causing the quantum system to perform a conditional operation. The method includes identifying a first set of trapping regions in which the conditional operation should be performed and a second set of trapping regions in which the conditional operation should not be performed, wherein respective potentials of the trapping regions in each of the first set of trapping regions and the second set of trapping regions are each defined by a respective electrode sequence of a confinement device of the quantum system. Each electrode sequence includes a first switchable control electrode configured to switchably communicate with a selected control voltage source of two or more switchable control voltage sources and a plurality of broadcast control electrodes each configured to electrically communicate with a respective broadcast control voltage source of a plurality of broadcast control voltage sources. The method further includes controlling operation of the first switchable control voltage source, the second switchable control voltage source, the broadcast control voltage source, and which of the first switchable control voltage source or the second switchable control voltage source each of the first switchable control electrode and the second switchable control electrode is in electrical communication with, so that each quantum object disposed in a first subset of the plurality of trapping regions is moved in a first direction along its respective trapping region and each quantum object disposed in a second subset of the plurality of trapping regions is moved in a second direction along its respective trapping region. The method further includes controlling operation of one or more components of the quantum system to cause a conditional operation to be performed on each quantum object in the first subset of the plurality of trapping regions.

[0054] The invention is described in general terms and with reference to the accompanying drawings, which are not necessarily to scale. [Brief explanation of the drawings]

[0055] [Figure 1A]FIG. 1 is a top view illustrating at least a portion of an exemplary quantum object confinement device that may be used in an exemplary embodiment. [Figure 1B] FIG. 1 is a schematic diagram illustrating an electrode sequence corresponding to two linear trapping regions, according to an exemplary embodiment. [Figure 1C] FIG. 10 is a schematic diagram illustrating two electrode sequences corresponding to a circuit trapping region, according to an exemplary embodiment. [Figure 1D] FIG. 10 is a top view illustrating at least a portion of another exemplary quantum object confinement device that may be used in an exemplary embodiment. [Figure 2] FIG. 2 is a diagram illustrating an exemplary scheme for executing conditional motion primitives, according to an exemplary embodiment. [Figure 3] FIG. 10 is a diagram illustrating another exemplary scheme for executing conditional motion primitives, according to an exemplary embodiment. [Figure 4A] FIG. 10 is a schematic diagram illustrating a conditional junction replacement operation in accordance with an exemplary embodiment; [Figure 4B] FIG. 10 is a schematic diagram illustrating a conditional junction replacement operation in accordance with an exemplary embodiment; [Figure 4C] FIG. 10 is a schematic diagram illustrating a conditional junction replacement operation in accordance with an exemplary embodiment; [Figure 4D] FIG. 10 is a schematic diagram illustrating a conditional junction replacement operation in accordance with an exemplary embodiment; [Figure 4E] FIG. 10 is a schematic diagram illustrating a conditional junction replacement operation in accordance with an exemplary embodiment; [Figure 4F] FIG. 10 is a schematic diagram illustrating a conditional junction replacement operation in accordance with an exemplary embodiment; [Figure 4G] FIG. 10 is a schematic diagram illustrating a conditional junction replacement operation in accordance with an exemplary embodiment; [Figure 5A] FIG. 10 is a schematic diagram illustrating a conditional linear exchange operation, according to an exemplary embodiment. [Figure 5B]FIG. 10 is a schematic diagram illustrating a conditional linear exchange operation, according to an exemplary embodiment. [Figure 5C] FIG. 10 is a schematic diagram illustrating a conditional linear exchange operation, according to an exemplary embodiment. [Figure 5D] FIG. 10 is a schematic diagram illustrating a conditional linear exchange operation, according to an exemplary embodiment. [Figure 6A] 1 is a schematic diagram illustrating a conditional no-transport operation in accordance with an exemplary embodiment; [Figure 6B] 1 is a schematic diagram illustrating a conditional no-transport operation in accordance with an exemplary embodiment; [Figure 6C] 1 is a schematic diagram illustrating a conditional no-transport operation in accordance with an exemplary embodiment; [Figure 6D] 1 is a schematic diagram illustrating a conditional no-transport operation in accordance with an exemplary embodiment; [Figure 7A] FIG. 10 is a schematic diagram illustrating a partial row shifting operation, according to an example embodiment. [Figure 7B] FIG. 10 is a schematic diagram illustrating a partial row shifting operation, according to an example embodiment. [Figure 7C] FIG. 10 is a schematic diagram illustrating a partial row shifting operation, according to an example embodiment. [Figure 7D] FIG. 10 is a schematic diagram illustrating a partial row shifting operation, according to an example embodiment. [Figure 8] FIG. 10 is a schematic diagram illustrating a conditional motion primitive in which a quantum object is initially placed at a junction between a set of linear trapping regions, according to an illustrative embodiment; [Figure 9] FIG. 1 is a schematic diagram illustrating an exemplary quantum computing system comprising a quantum object confinement device having a periodic or quasi-periodic arrangement of trapping regions and configured to perform a conditional operation, in accordance with various embodiments. [Figure 10] FIG. 1 is a schematic diagram of an example controller of a quantum computer configured to perform one or more deterministic reshaping and / or reordering functions, according to various embodiments. [Figure 11] 11 is a flowchart illustrating various processes, procedures, and / or actions performed by the controller of FIG. 10, for example, to perform conditional actions, according to various embodiments. [Figure 12] FIG. 1 is a schematic diagram of an exemplary computing entity of a quantum computer system that may be used by an exemplary embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0056] The present invention will now be described in more detail below with reference to the accompanying drawings, in which some, but not all, embodiments of the invention are shown. Indeed, the present invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will satisfy applicable legal requirements. The term "or" (also written " / ") is used herein in both an alternative and connective sense, unless otherwise noted. The terms "exemplary" and "exemplary" are used as examples without denoting a level of quality. The terms "generally" and "about" refer to within engineering and / or manufacturing limits and / or user measurement capabilities, unless otherwise noted. Like numbers refer to like elements throughout.

[0057] Exemplary embodiments provide methods, systems, devices, computer program products, and / or the like for performing conditional operations on quantum objects trapped by a confinement device having multiple trapping regions. In various embodiments, the confinement device comprises multiple trapping regions having similar and / or common structures (e.g., the same electrode or other control structure layout and / or arrangement, the same dimensions, and / or the like). In various embodiments, the multiple trapping regions are arranged in a periodic or quasi-periodic array of trapping regions.

[0058] Various embodiments provide methods for and / or use with various confinement devices. For example, the confinement device may be an optical trap, a magnetic trap, a dipole trap, a quadrupole trap, and / or the like, including multiple trapping regions of similar and / or common structure. The confinement device is configured to confine a respective type of quantum object (e.g., neutral atoms / molecules, charged / ionic atoms / molecules, quantum particles, quantum dots, and / or the like). One or more trapping regions of the confinement device include respective switchable control elements that switchably communicate with two or more switchable control signals provided by respective switchable confinement control electric field sources. The ability to select between two or more switchable control signals enables conditional operations to be performed within each trapping region. Various embodiments are described herein relating to quadrupole ion traps (e.g., surface ion traps configured to confine ions). However, based on the disclosure provided herein, one skilled in the art would be able to implement various embodiments using other forms of confinement devices.

[0059] In various embodiments, where the containment device is an ion trap, the trapping region of the containment device is defined by an electric potential. In various embodiments, the electric potential within each trapping region is defined by a respective electrode sequence. Each electrode sequence includes a respective plurality of control electrodes, including one or more switchable control electrodes. In various embodiments, the one or more switchable control electrodes include a first switchable control electrode. In various embodiments, the one or more switchable control electrodes include, in addition to the first switchable control electrode, a second switchable control electrode and, in some cases, additional switchable control electrodes. The first switchable control electrode and, when present, the second switchable control electrode are configured to switchably and / or alternately communicate electrically with a first switchable control voltage source or a second switchable control voltage source of the plurality of voltage sources. For example, in one exemplary embodiment, at any particular time, the first switchable control electrode is in electrical communication with exactly one of the first switchable control voltage source or the second switchable control voltage source. The switchable configurations of the first switchable control electrode and the second switchable control electrode in each trapping region of the plurality of trapping regions are independently controllable, allowing for conditional execution of an operation in one or more trapping regions while preventing execution of an operation in other trapping regions.

[0060] In various embodiments, the confinement device is a device configured to confine quantum objects using electromagnetic fields. For example, in one exemplary embodiment, the confinement device is configured to trap one or more quantum objects in one or more potential wells. In one exemplary embodiment, the confinement device is an ion trap, such as a surface ion trap and / or a Paul ion trap.

[0061] In various embodiments, the trapping device is configured to trap a quantum object within each one-dimensional trapping region of the plurality of trapping regions. In various embodiments, the one-dimensional trapping region is linear, round (e.g., circular, elliptical, and / or the like), curved, and / or other one-dimensional shape. In various embodiments, some of the plurality of trapping regions have a common structure. For example, each of the plurality of trapping regions is defined by an electrode layout that is common to each of the plurality of trapping regions. For example, each of the plurality of trapping regions includes a respective electrode sequence that is substantially identical in electrode size, positioning, and ordering / positioning to broadcast control electrodes, shim electrodes, RF electrodes, ground electrodes, and switchable control electrodes and / or the like.

[0062] In various embodiments, one-dimensional trapping regions are connected to other one-dimensional trapping regions through junctions to form a two-dimensional or three-dimensional periodic or quasi-periodic array of trapping regions. A quasi-periodic array is an array in which the periodicity of the array is perturbed by a global distortion. In other words, a quasi-periodic array is approximately periodic, but the periodicity is perturbed in one or more dimensions. In various embodiments, the periodic or quasi-periodic array of trapping regions may be similar to the array of trapping regions described in U.S. Application No. 17 / 910,082, filed June 30, 2022, the entire contents of which are incorporated herein by reference.

[0063] In various embodiments, the quantum object is an object having multiple quantum states that can be confined by a confinement device and manipulated while the quantum object is confined by the confinement device. For example, in various embodiments, the quantum object is a neutral or ionic atom, a neutral, charged, or multipolar molecule, a quantum particle, and / or the like. In various embodiments, the quantum object is a group of two or more neutral or ionic atoms, neutral, charged, or multipolar molecules, quantum particles, and / or the like. For example, in various embodiments, the quantum object is a singly ionized ytterbium atom, a singly ionized barium atom, or an ionic crystal comprising one or more singly ionized ytterbium atoms and / or one or more singly ionized barium atoms. In various embodiments, the quantum object is or comprises a singly ionized calcium atom, a singly ionized strontium atom, a singly ionized magnesium atom, a singly ionized beryllium atom, a singly ionized mercury atom, and / or the like.

[0064] In various embodiments, the confinement device is configured such that operations can be performed in parallel in two or more of the multiple trapping regions. For example, a quantum system including the confinement device can be configured such that a manipulation signal (e.g., one or more laser beams, magnetic fields, magnetic field gradients, electric fields, other fields, or the like) can be emitted to a portion of the confinement device, thereby allowing the manipulation signal to interact with quantum objects in the multiple trapping regions.

[0065] However, it is not always desirable to perform an operation in each of two or more trapping regions where the operation could be performed in parallel. For example, a containment device may be configured such that operation X can be performed in parallel in trapping regions A, B, C, and D. However, in one exemplary scenario, it is only desirable to perform the operation in trapping regions A, B, and C.

[0066] In a conventional confinement device, the electromagnetic field and / or potential within each trapping region is independently controllable because each control electrode of the confinement device is independently supplied with a control voltage signal. For example, in a conventional confinement device, each control electrode is in electrical communication with a control voltage source, and the number of control voltage sources is equal to the total number of control electrodes across all trapping regions. This means that the confinement device includes traces or leads to the individual control electrodes, and that the quantum system includes at least as many voltage sources as there are control electrodes.

[0067] For small confinement devices configured to confine a small number of quantum objects (e.g., 20 to 30 or fewer), the infrastructure for providing independent control voltage signals to each control electrode is manageable. However, for large confinement devices configured to confine a large number of quantum objects (e.g., 50, 100, or more), the number of control voltage sources and leads for providing independent control voltage signals to each control electrode increases, making the system extremely complex. For example, making available a sufficient number of connection points for the leads on the chip that makes up the confinement device is a challenge. Additionally, the number of independent voltage sources, voltage signal filters, and feedthroughs to the cryostat and / or vacuum chamber containing the confinement device are all too numerous to efficiently manage. Thus, a technical problem exists regarding how to provide voltage signals to the control electrodes of large confinement devices while still allowing sufficient independent control of the trapping regions to enable conditional operations to be performed.

[0068] Various embodiments provide technical solutions to these technical problems. For example, in various embodiments, a quantum object confinement device comprises one or more electrode sequences, each electrode sequence including a respective plurality of control electrodes configured to control an electrical potential within each of a plurality of trapping regions of the quantum object confinement device. Each of the plurality of control electrodes includes a first switchable control electrode and possibly a second switchable control electrode of the one or more switchable control electrodes, each configured to be in switchable and / or alternating electrical communication with a plurality of switchable control voltage sources.

[0069] In an exemplary embodiment, each of the plurality of control electrodes further includes a plurality of broadcast control electrodes each configured to be in electrical communication with a respective broadcast control voltage source of the plurality of broadcast control voltage sources, e.g., the first broadcast control electrode of the first trapping region and the first broadcast control electrode of the second trapping region are in electrical communication with the same broadcast control voltage source.

[0070] Similarly, each of the first and possibly second switchable control electrodes of the one or more switchable control electrodes is in (switchable) electrical communication with one control voltage source of the plurality of switchable control voltage sources. This allows the number of control voltage sources, chip interconnects, and the like to scale with the number of control electrodes in each electrode sequence. In particular, this allows the number of control voltage sources, chip interconnects, and the like to not scale with the number of electrode sequences while still allowing for the execution of conditional operations. Thus, various embodiments provide technical improvements to the fields of confinement devices and quantum systems (e.g., QCCD-based quantum systems).

[0071] 1A presents a schematic diagram of an exemplary confinement device 100 comprising multiple one-dimensional trapping regions 110 (e.g., 110A, 110B, 110C, 110D). Each trapping region 110 is connected to other trapping regions of the confinement device 100 via junctions 120. For example, trapping regions 110A, 110B, 110C, and 110D are connected to one another via junctions 120. As used herein, trapping regions 110A, 110B, 110C, and 110D are connected to one another via junctions 120 in the sense that one or more quantum objects disposed in trapping region 110A can be transported to any of trapping regions 110B, 110C, or 110D via junctions 120. In the illustrated embodiment, the trapping regions are arranged and / or configured to provide a periodic or quasi-periodic arrangement 105 of trapping regions 110.

[0072] 1B presents a schematic diagram of trapping regions 110A and 110B. In various embodiments, confinement device 100 comprises one or more radio frequency (RF) electrodes, referred to herein as RF rails 112 (e.g., 112A, 112B). A periodic voltage signal (e.g., having a radio frequency periodicity) is applied to RF rails 112 to generate a confinement or trap pseudopotential that generally defines one-dimensional trapping region 110.

[0073] The electrical potential along the axis 113 of the trapping region 110 is controlled by an electrode sequence 130 (e.g., 130A, 130B). In various embodiments, the electrode sequences 130 each include multiple control electrodes 114 (e.g., 114A, 114B, 114C, 114D, 114E).

[0074] In various embodiments, each control electrode 114 communicates with a respective control voltage source (via wires, leads, traces, and / or the like), and a time-varying directional current (DC) control voltage signal generated by the respective control voltage source is applied to the respective control electrode 114. In various embodiments, the control voltage signal supplied to each of the multiple control electrodes of the electrode sequence 130 is configured to define a potential well within the respective trapping region 110 corresponding to the electrode sequence 130. As used herein, an electrode sequence 130A corresponds to the trapping region 110A when the electrode sequence 130A is configured to control the potential within the trapping region 110A. The control voltage signal may be varied over time to cause one or more potential wells to move along the one-dimensional trapping region. When two potential wells are present, the potential wells may move in the same or different directions along the one-dimensional trapping region 110 based on the control voltage signals applied to the electrodes 114 of the electrode sequence 130.

[0075] 1B illustrates one exemplary configuration of control electrodes. Various other embodiments may include more or fewer than five control electrodes 114 in each sequence 130 of control electrodes. In various embodiments, an electrode sequence of control electrodes 114 may include control electrodes 114 disposed outside of and / or between RF rails 112. In one exemplary embodiment, an electrode sequence may include one or more control electrodes that are neither switchable control electrodes nor broadcast control electrodes.

[0076] It should be understood that Figure 1A illustrates one example of a periodic or quasi-periodic arrangement of trapping regions. Various other embodiments may include multiple trapping regions each having a common structure (e.g., defined by respective electrode sequences that are substantially the same) with zero or more broadcast electrodes and one or more switchable control electrodes, which may or may not be interconnected by junctions and may or may not have a periodic or quasi-periodic arrangement. For example, Figure 1D illustrates an exemplary quantum object confinement device 100' comprising multiple trapping regions 110 (e.g., 110X, 110Y, 110Z) each having a substantially identical structure (e.g., defined by respective electrode sequences that are substantially the same or similar to each other) that do not form a periodic or quasi-periodic arrangement of trapping regions.

[0077] The plurality of control electrodes 114 of the electrode sequence 130 includes a first switchable control electrode 132 and a second switchable control electrode 134. The first switchable control electrode 132 and the second switchable control electrode 134 are configured to be switchably and / or alternately connected to and in electrical communication with one of a first switchable control voltage source 5A and a second switchable control voltage source 5B via a control switch 116 (e.g., 116A, 116B). The first switchable control voltage source 5A is configured to generate and supply a first switchable control voltage signal U(t). In various embodiments, the first switchable control voltage signal U(t) is a dynamic analog voltage signal. The second switchable control voltage source 5B is configured to generate and supply a second switchable control voltage signal S(t). In various embodiments, the second switchable control voltage signal S(t) is a dynamic analog voltage signal.

[0078] As illustrated, the control switch 116B is in a first switch position where the first switchable control electrode 132 is in electrical communication with the first switchable controlled voltage source 5A and the second switchable control electrode 134 is in electrical communication with the second switchable controlled voltage source 5B. The control switch 116A is in a second switch position where the first switchable control electrode 132 is in electrical communication with the second switchable controlled voltage source 5B and the second switchable control electrode 134 is in electrical communication with the first switchable controlled voltage source 5A.

[0079] In one exemplary embodiment, the control switch 116 is a double-pole, double-throw switch. Other forms of switches may be used in various other embodiments depending on the application.

[0080] In various embodiments, the control switches 116 of each trapping region 110 are independently operable and / or controllable. As used herein, independently controllable means that the state or output of an element is independent of the state or output of each of the other similar elements of the containment device. For example, the switch position of the first control switch 116A is configured to be independent of the switch positions of all other switches 116 of the containment device 100.

[0081] In various embodiments, the control switch 116 is controlled by a switch signal. For example, the switch is in electrical communication with a switch signal generator 20 (e.g., 20A, 20B). In an exemplary embodiment, the switch signal generator is a digital signal generator. For example, in the illustrated embodiment, the switch signal is a single-bit digital signal (e.g., either a first voltage representing a "0" or a second voltage representing a "1"). For example, when the switch signal is a first voltage, the switch is switched to and / or maintained in a first switch position, and when the switch signal is a second voltage, the switch is switched to and / or maintained in a second switch position. The switching or changing of the switch position depends on whether the first and second switchable control electrodes 132, 134 are in electrical communication with the first and second switchable control voltage sources 5A, 5B.

[0082] In an exemplary embodiment, the first switchable control electrode 132 is always in electrical communication with the opposite control voltage source, one of the first switchable control voltage source 5A and the second switchable control voltage source 5B, with respect to the second switchable control electrode 134. In an exemplary embodiment, the first switchable control electrode 132 is always in electrical communication with the same control voltage source, one of the first switchable control voltage source 5A and the second switchable control voltage source 5B, with respect to the second switchable control electrode 134. For example, the switchable electrical communication between the first switchable control electrode 132 and the first and second switchable control voltage sources 5A, 5B, and the switchable electrical communication between the second switchable control electrode 134 and the first and second switchable control voltage sources 5A, 5B, are controlled by a single control switch 116. For example, when the first switchable control electrode 132 switches the electrical communication destination between the first and second switchable control voltage sources 5A, 5B, the electrical communication destination between the second switchable control electrode 134 also changes between the first and second switchable control voltage sources 5A, 5B.

[0083] In various embodiments, the control switch 116 may define two or more switch positions. For example, in one exemplary embodiment, the control switch 116 is switchable between two or more switch positions, each of which is configured to cause the first switchable control electrode to be in electrical communication with a selected one of two or more selectable control voltage sources. In various embodiments, more than two control electrodes 114 are in communication with the control switch 116. In various embodiments, the trapping region 110 may be associated with multiple control switches 116. For example, the control switch 116 may be configured to enable switchable control that places the first switchable control electrode 132 and the second switchable control electrode 134 in electrical communication with more than two switchable control voltage sources. In another example, the second switch of the trapping region 110 may be configured to enable switchable control that places the third and fourth switchable control electrodes in electrical communication with selected ones of the third and fourth switchable control voltage sources, respectively. For example, in various embodiments, N switchable control voltage sources are in switchable and / or alternating electrical communication with M control electrodes 114 of each trapping region 110 of the periodic or quasi-periodic array 105 and / or the plurality of trapping regions 110 of the confinement device 100, where N and M are integers greater than 0.

[0084] 1B , the first switchable control voltage source 5A and the second switchable control voltage source 5B are in electrical communication with the respective electrodes 114 of both trapping region 110A and trapping region 110B. In various embodiments, the first switchable control voltage source 5A and the second switchable control voltage source 5B are in electrical communication with the respective control electrodes 114 of each trapping region 110 of the periodic or quasi-periodic array 105 and / or the plurality of trapping regions 110 of the confinement device 100. In other words, in various embodiments, the number of switchable control voltage sources 5 does not increase or decrease depending on the number of trapping regions 110 of the confinement device 100. For example, a quantum system with a confinement device including 100 trapping regions may include the same number of switchable control voltage sources as a quantum system with a confinement device including 10,000 trapping regions. However, the switchable electrical connection between each switchable control electrode and each switchable control voltage source 5 allows for conditional execution of operations in each of the trapping regions 110.

[0085] In various embodiments, the plurality of control electrodes 114 of the electrode sequence 130 includes one or more broadcast control electrodes 136. In various embodiments, each broadcast control electrode 136 is configured to be in electrical communication with a respective voltage source of one or more broadcast control voltage sources 10 (e.g., 10A, 10B, 10C). In various embodiments, each broadcast control voltage source 10 is configured to generate and provide a respective broadcast control voltage signal V(t) (e.g., V1(t), V2(t), V3(t)). In various embodiments, the broadcast control voltage signals are analog voltage signals.

[0086] In various embodiments, electrical communication between broadcast control electrodes 136 and respective broadcast controlled voltage sources 10 is stable, consistent, and / or unchanged throughout operation of a quantum system including confinement device 100 with broadcast control electrodes 136. For example, control electrode 114B of trapping region 110A and control electrode 114B of trapping region 110B are always in electrical communication with first broadcast controlled voltage source 10A throughout operation of a quantum system including confinement device 10 and first broadcast controlled voltage source 10A.

[0087] 1B , broadcast control voltage source 10 is in electrical communication with each broadcast control electrode 136 in both trapping region 110A and trapping region 110B. Broadcast control voltage source 10 is referred to herein as “broadcast” because the voltage signal generated by the broadcast control voltage source 10 is supplied to each of the plurality of respective broadcast control electrodes 136 in each trapping region. In various embodiments, broadcast control voltage source 10 is in electrical communication with each of the trapping regions 110 in periodic or quasi-periodic array 105 and / or each of the plurality of trapping regions 110 in confinement device 100. In other words, in various embodiments, the number of broadcast control voltage sources 10 does not increase or decrease depending on the number of trapping regions 110 in confinement device 100. For example, a quantum system with a confinement device including 100 trapping regions may include the same number of broadcast control voltage sources as a quantum system with a confinement device including 10,000 trapping regions (assuming both confinement devices have the same number of control electrodes and / or broadcast control electrodes per electrode sequence).

[0088] In various embodiments, the broadcast control voltage source 10 is in electrical communication with each trapping region 110 in the periodic or quasi-periodic array 105 and / or each broadcast control electrode 136 in the plurality of trapping regions 110 in the confinement device 100. Thus, the potential generated by the first electrode sequence 130A is the same as the potential generated by the second electrode sequence 130B when the first control switch 116A coupled to the first electrode sequence 130A and the second control switch 116B coupled to the second electrode sequence 130B are in the same switch position. However, the potential generated by the first electrode sequence 130A is different from the potential generated by the second electrode sequence 130B when the first control switch 116A coupled to the first electrode sequence 130A and the second control switch 116B coupled to the second electrode sequence 130B are in different switch positions. Thus, in one exemplary embodiment, a conditional action is performed within each trapping region 110 where the corresponding control switch 116 is in the first switch position, and a conditional action is prevented from being performed within each trapping region 110 where the corresponding control switch 116 is in the second switch position.

[0089] In various embodiments, the plurality of trapping regions 110 are divided into several groups. For example, in the periodic or quasi-periodic array 105, the trapping regions 110 are divided into a group of horizontal trapping regions including trapping regions 110A and 110B and a group of vertical trapping regions including trapping regions 110C and 110D. In an exemplary embodiment, a set of broadcast control voltage sources 10 is provided for each group of trapping regions. For example, trapping regions 110A and 110B each include a broadcast control electrode 136 in electrical communication with a respective broadcast control voltage source of a first set of broadcast control voltage sources, and trapping regions 110C and 110D each include a broadcast control electrode 136 in electrical communication with a respective broadcast control voltage source of a second set of broadcast control voltage sources. For example, this allows for independent control of operations performed in the "vertical" trapping regions and "horizontal" trapping regions, without the number of voltage sources required scaling with the number of trapping regions in the plurality of trapping regions.

[0090] In various embodiments, the trapping regions 110 are divided into several groups based on the subarray of the trapping device 100. In various embodiments, the multiple trapping regions 110 are divided into several groups based on the dimension and / or direction of the periodic or quasi-periodic array 105. For example, if the periodic or quasi-periodic array 105 of trapping regions 110 is a two-dimensional array, the trapping regions 110 may be divided into two groups, each group representing one of the dimensions of the array (e.g., horizontal and vertical in the example presented above). If the periodic or quasi-periodic array 105 is a three-dimensional array, the trapping regions 110 may be divided into three groups, each group representing one of the dimensions of the array. In various embodiments, the trapping regions 110 may be divided into multiple groups based on factors other than the dimension of the trapping device. For example, groups may be designated for several operational purposes, such as gate control, initialization, measurement, loading, storage, cooling, or other functions required for the operation of a quantum system.

[0091] In one exemplary embodiment, the plurality of broadcast control voltage sources 10 includes a first set of broadcast control voltage sources and a second set of broadcast control voltage sources. The plurality of broadcast control electrodes of a given electrode sequence are in selective electrical communication with respective broadcast control voltage sources of the first set of broadcast control voltage sources or the second set of broadcast control voltage sources, thereby reducing crosstalk between some sequences of electrodes among the plurality of sequences of electrodes. For example, in one exemplary embodiment, a determination of whether a broadcast control electrode of a given electrode sequence is in electrical communication with respective broadcast control voltage sources of the first set of broadcast control voltage sources or the second set of broadcast control voltage sources is made based on whether the switch positions of one or more adjacent electrode sequences are the same or different switch positions as the given electrode sequence.

[0092] In another exemplary embodiment, the switchable control voltage source includes more than two switchable control voltage sources, each configured to generate and supply a respective switchable control voltage signal. The control switch 116 is configured to enable switching of electrical communication between the first and second switchable control electrodes 132, 134 of the more than two switchable control voltage sources. For example, the controller 30 may determine whether to place the first and second switchable control electrodes 132, 134 of a respective electrode sequence in electrical communication with the respective one of the first and second switchable control voltage sources or the respective one of the third and fourth switchable control voltage sources based at least in part on the assigned switch positions of adjacent trapping regions to reduce any possible crosstalk between the trapping regions.

[0093] FIG. 2 presents a schematic diagram of the execution of a conditional motion primitive. For example, FIG. 2 illustrates a potential well 200 created by an electrode sequence 130 within a one-dimensional trapping region 110. At time t0, as shown in the top row of FIG. 2, potential well 200 is positioned at the center of trapping region 110, and quantum object 205 is disposed within potential well 200. As will be appreciated, in various scenarios, one or more quantum objects may be disposed within potential well 200; a single quantum object 205 is illustrated in FIG. 2 for clarity. At time t0, first switchable control signal U is substantially equal to second switchable control signal S.

[0094] The middle row of FIG. 2 shows the execution of a conditional motion primitive at time t, with the corresponding control switch 116 in a first position (left) and the corresponding control switch 116 in a second position (right). <t<t f The initial time t0 and the final time t fAt an intermediate time t between t and t, first switchable control signal U is not equal to second switchable control signal S. In particular, potential well 200 is moved from a position over control electrode 114C toward a position over control electrode 114B when control switch 116 is in a first switch position, and toward a position over control electrode 114D such that first switchable control signal U is applied to control electrode 114B and second switchable control signal S is applied to control electrode 114D. Similarly, potential well 200 is moved from a position over control electrode 114C toward a position over control electrode 114D when control switch 116 is in a second switch position, such that first switchable control signal U is applied to control electrode 114D and second switchable control signal S is applied to control electrode 114B. Quantum object 205 remains within potential well 200 and moves with the potential well toward control electrode 114B when control switch 116 is in the first switch position, and toward control electrode 114D when control switch 116 is in the second switch position.

[0095] As shown in the bottom row of Figure 2, at time t f At time t, electrode sequence 130 (as a result of the broadcast control signal applied to its broadcast control electrode 136) defines two potential wells 200A, 200B. The first potential well 200A is disposed to the left of the center of trapping region 110 (e.g., above control electrode 114B), and the second potential well 200B is disposed to the right of the center of trapping region 110 (e.g., above control electrode 114D). f , the first switchable control signal U is substantially equal to the second switchable control signal S. Thus, which of the first potential well 200A and the second potential well 200B is occupied by the quantum object 205 depends on the switch position of the corresponding control switch 116.

[0096] For example, in one exemplary embodiment, a first switchable control signal U(t) is configured to attract quantum object 205, and a second switchable control signal S(t) is configured to repel quantum object 205 (if U≠S). Thus, at time t f , the quantum object 205 occupies either the first potential well 200A or the second potential well 200B which is closer to the switchable control electrodes 132, 134 in electrical communication with the first switchable control voltage source 5A (and to which the first switchable control voltage signal U is applied).

[0097] Thus, the respective switchable electrical communications between the first and second switchable control voltage sources 5A and 5B and the first and second switchable control electrodes 132 and 134 enable conditional motion primitives that can be individually controlled in each of the trapping regions 110 via the respective switches 16, even though the respective broadcast control electrodes 136 of the multiple trapping regions are each in electrical communication with the same respective broadcast control voltage source 10.

[0098] 1B , in some embodiments, electrode sequence 130 includes one or more shim electrodes 118. Shim electrodes 118 are in electrical communication with a set of shim voltage sources 15. In various embodiments, stray electric fields within containment device 100 can cause some motion behavior within some trapping regions to be unreliable. To compensate for stray electric fields, in an exemplary embodiment, one or more quasi-static analog voltage signals are applied to one or more shim electrodes 118.

[0099] 1B illustrates a shim electrode 110B in electrical communication with a capacitor 119 that is in selective electrical communication with a shim voltage source 15 via a shim switch 115. For example, in one exemplary embodiment, a shim electrode voltage may be written by the shim voltage source 15 through the shim switch 115 and stored in a capacitor 119 in electrical communication with the shim electrode 118; when the shim voltage source is subsequently disconnected from the shim electrode (e.g., a switch is opened), the capacitor 119 remains in constant electrical communication with the shim electrode and retains the voltage value. Periodically, the shim electrode voltage is refreshed by rewriting it by closing a switch to electrically connect the shim voltage source to the shim electrode and associated capacitor storage device. In one exemplary embodiment, the shim voltage periodically applied to the shim electrode may be substantially the same or substantially different from the previous value. In this way, the shim voltage values ​​can compensate for stray electric field drift in the capacitor storage device due to leakage current and maintain the values ​​necessary to overcome slow voltage drift. In another exemplary embodiment, the shim voltages can be varied to produce different operating results. For example, the shim values ​​can be written to different values ​​for gating purposes than those used for measurement purposes.

[0100] In another exemplary embodiment, a voltage summer is used to insert a quasi-static voltage signal into one or more of the control electrodes 114. In an exemplary embodiment, the shim electrode 118 is one of these control electrodes 114. As used herein, the term quasi-static refers to an analog signal that changes more slowly in time than the control voltage signals (e.g., U(t), S(t), V1(t), V2(t), V3(t)). For example, the quasi-static voltage signal may have a slower update rate and / or a lower filter cutoff frequency than the control voltage signals.

[0101] In various embodiments, shim electrode 118 is in switchable electrical communication with one of first shim voltage source 15A and second shim voltage source 15B. In various embodiments, first shim voltage source 15A is configured to generate and supply a first shim voltage signal, and second shim voltage source 15B is configured to generate and supply a second shim voltage signal. In one exemplary embodiment, the first shim voltage signal and the second shim voltage signal are different voltage signals having different amplitudes and / or signs. In various embodiments, the first shim voltage signal has the same amplitude as the second shim voltage signal but an opposite sign. For example, in one exemplary embodiment, the first shim voltage signal is equal to the second shim voltage signal multiplied by negative one.

[0102] In various embodiments, the shim electrode 118 is in switchable electrical communication with one of the first shim voltage source 15A and the second shim voltage source 15B via a shim switch 115. In various embodiments, the shim switch 115 is controlled via application of a switch signal thereto. In one exemplary embodiment, the switch signal applied to the shim switch 115 is the same as the switch signal applied to the control switch 116. For example, in one exemplary embodiment, the shim switch 115 is in electrical communication with the switch signal generator 20.

[0103] 3 illustrates another example of a conditional motion primitive that enables the execution of a conditional action within a trapping region, where switch signals provided to the shim switches 115 and / or control switches 116 of the trapping region control whether a quantum object 205 confined by the trapping region is transported from an initial position to a first position or a second position. As will be appreciated, in various scenarios, one or more quantum objects may be disposed within the potential well 200, and a single quantum object 205 is illustrated in FIG. 3 for clarity.

[0104] 3, the switch signals supplied to the switchable control electrodes include shim signals. For example, a shim signal may be supplied with a first sign (e.g., a negative or positive voltage) to one switchable control electrode 132 / 134 as part of a first switchable control signal U, and a shim signal may be supplied with a second sign (e.g., a positive or negative voltage) opposite the first sign to the other switchable control electrode as part of a second switchable control signal S.

[0105] 3, a potential well 200 is created at an initial position (e.g., the center) of trapping region 110 due to the control voltage signals (e.g., the first and second switchable control voltage signals and the broadcast control voltage signal) applied to the control electrodes 114 of electrode sequence 130. At time t0, the first switchable control voltage signal is equal to the second switchable control voltage signal, and the shim voltage signal (e.g., the voltage signal applied to shim electrode 118) is zero.

[0106] The middle row of FIG. 3 illustrates the execution of a conditional motion primitive at time t, where t0 is the time for a scenario in which the corresponding control switch 116 is in a first position (left) and a scenario in which the corresponding control switch 116 is in a second position (right). <t<t f The initial time t0 and the final time t fAt an intermediate time t between t and t, the first switchable control signal U is not equal to the second switchable control signal S. For example, the first switchable control signal U may differ from the second switchable control signal S by twice the absolute amplitude of the shim signal. In particular, a double potential well 200C is formed, in which a first minimum is located toward control electrode 114C and a second minimum is located toward control electrode 114D. The first and second minimums are separated by a small potential barrier (e.g., small compared to the depth of potential well 200C). Quantum object 205 occupies a minimum value near first switchable control electrode 132 (e.g., control electrode 114B in the exemplary embodiment illustrated in FIG. 3 ) when control switch 116 is placed in a first switch position such that a first switchable control signal U is applied to first switchable control electrode 132 and a second switchable control signal S is applied to second switchable control electrode 134 (e.g., control electrode 114D in the exemplary embodiment illustrated in FIG. 3 ). Similarly, quantum object 205 occupies a minimum value near second switchable control electrode 134 when control switch 116 is placed in a second switch position such that a first switchable control signal U is applied to second switchable control electrode 134 and a second switchable control signal S is applied to first switchable control electrode 132.

[0107] As shown in the bottom row of Figure 3, at time t f , the control voltage signals (e.g., first and second switchable control voltage signals and a broadcast control voltage signal) applied to the control electrodes 114 of the electrode sequence 130 cause the first potential well 200A to be positioned at a first position along the trapping region and the second potential well 200B to be positioned at a second position along the trapping region, and the first switchable control voltage signal U is substantially equal to the second switchable control voltage signal S. For example, at time t fBy then, the amplitude of the shim voltage signal has decayed back to zero and quantum object 205 occupies either first potential well 200A or second potential well 200B based on whether control switch 116 was in the first switchable position or the second switchable position when the conditional motion primitive was executed.

[0108] Thus, in various embodiments, the number of analog voltage sources is proportional to and / or scales accordingly with the number of electrodes in the electrode sequence 130, and is not proportional to and / or scales accordingly with the number of trapping regions 110 of the containment device 100. Furthermore, a single digital signal per trapping region (e.g., generated by a respective switch signal generator) allows independent control for each trapping region, such that a conditional action can be caused to be performed in a first subset of the trapping regions and prevented from being performed in a second subset of the trapping regions.

[0109] 2 and 3 illustrate electrode sequence 130 as symmetrical (e.g., switchable control electrodes 132, 134 are symmetrically arranged around the center of electrode sequence 130), various embodiments are symmetrical in this manner. For example, in one exemplary embodiment, control electrodes 114B and 114E are switchable control electrodes 132, 134. In another exemplary embodiment, control electrodes 114 of electrode sequence 130 may differ in terms of shape and / or size (e.g., the length of the control electrodes along and / or parallel to axis 113, or different dimensions of the control electrodes). As will be appreciated, electrode sequence 130 is illustrated as including five control electrodes. However, in various embodiments, electrode sequence 130 may include control electrodes having various numbers and different sizes and shapes and relative positions.

[0110] FIG. 1C illustrates exemplary circuit trapping regions 110′n and 110′m. In various embodiments, the circuit trapping region is a one-dimensional closed-loop trapping region. For example, the one-dimensional circuit trapping region 110′ can be a circular, elliptical, rectangular, polygonal, or other closed-loop trapping region. For example, multiple circular, elliptical, rectangular, polygonal, or other closed-loop trapping regions 110′ can be used to generate a periodic or quasi-periodic array of trapping regions. In various embodiments, the closed loop of the circuit is formed explicitly by the geometry of the trapping region or logically by constructing a circuit from the geometry of other trapping regions (e.g., forming a circuit from a two-dimensional lattice of linear trapping regions). In one exemplary embodiment, the periodic or quasi-periodic array of trapping regions can include a combination of circuit trapping regions 110′ and linear trapping regions 110.

[0111] In the illustrated embodiment of the circular, elliptical, rectangular, polygonal, or closed-loop trapping region 110′, each control electrode 114 (e.g., 114A-114H) is a switchable control electrode. For example, the control switches 116 (e.g., 116n, 116m) control each of the control electrodes 114 to select one of the L partitions (e.g., V1, V2, V3, V4, V5, V6, V7, V8, V9, V10, V11, V12, V13, V14, V15, V16, V17, V18, V19, V20, V21, V22, V23, V24, V25, V26, V27, V28, V29, V30, V31, V32, V33, V34, V35, V36, V37, V38, V39, V40, V41, V42, V43, V44, V45, V46, V47, V48, V49, V50, V51, V52, V53, V54, V55, V56, V57, V58, V59, V59, V60, V61, V62, V63, V64, V65, V66, V67, V68, V69, V69, V70, V71, V72, V73, V74, V75, V76, V77, V78, V79, V79, V80, V81, V82, V83, V84, V85, V86, V87, V88, V89, V90, V91, V92, V93, V94, V95, V96, V97, V98, V L , V2 L , V3 L , V4 L , V5 L , V6 L , V7 L , V8 L , respectively) or R partitions (e.g., V1 R , V2 R , V3 R , V4 R , V5 R , V6 R , V7 R , V8 R, respectively), and two voltage sources are available for each electrode (i.e., L channel and R channel). As can be understood based on the above description, the switchable control voltage sources 5 are each configured to switchably communicate with a respective switchable control electrode of a plurality of trapping regions. For example, the switch position of the switch 116 is controlled by a switch signal s (e.g., s n , s m ) . In various embodiments, the switch signal is a digital signal. In various embodiments, when switch 116 is in a first switch position, it electrically connects the L partition of the controlled voltage source to the electrode sequence, causing the rotation of one or more potential wells of the circular, elliptical, rectangular, polygonal, or other closed-loop trapping region 110′ to rotate and / or move counterclockwise; when switch 116 is in a second switch position, it electrically connects the R partition of the controlled voltage source to the electrode sequence, causing the rotation of one or more potential wells of the circular, elliptical, rectangular, polygonal, or other closed-loop trapping region 110′ to rotate and / or move clockwise. Thus, the switch position of switch 116 controls whether one or more quantum objects trapped by trapping region 110′ rotate and / or move clockwise or counterclockwise around the circular, elliptical, rectangular, polygonal, or other closed-loop trapping region 110′.

[0112] In various embodiments, the same control signal is supplied to each control electrode 114 of the plurality of electrode sequences 130, each corresponding to a respective trapping region 110 of the plurality of trapping regions (e.g., of a periodic or quasi-periodic array of trapping regions). The use of shim switches 115 and / or control switches 116 allows for individual control of each trapping region 110. For example, the switch position of the shim switches 115 and / or control switches 116 of each trapping region determines whether an operation is performed in the respective trapping region or whether an operation is prevented from being performed in the respective trapping region. In other words, the containment device 100 is configured for conditional execution of parallel operations.

[0113] In an exemplary embodiment, different respective positions along each trapping region are configured for performing various operations thereon. For example, a first position of each trapping region of the plurality of trapping regions may be configured to perform a read operation. For example, a read operation signal path may be aligned with the first position of each trapping region of the plurality of trapping regions. Thus, when a quantum object is positioned at the first position of a trapping region and a read operation is performed (e.g., a read operation signal is propagated along the read operation signal path to determine the quantum state of the quantum object), the read operation is performed on the quantum object. When the quantum object is not positioned at the first position of a trapping region when the read operation signal is propagated along the read operation signal path, performance of the read operation on the quantum object is prevented.

[0114] The second position of each trapping region of the plurality of trapping regions may be associated with a conditional operation, such as a single-qubit gate, a two-qubit gate, a qubit initialization operation (e.g., preparing a quantum object to a known state in a defined qubit space), a position swap of quantum objects located within the same trapping region, or other transport or non-transport operations. Using the shim switches 115 or control switches 116 of each trapping region of the plurality of trapping regions, the presence or absence of one or more quantum objects at the second position may be independently controlled for each trapping region. Thus, the conditional operation is performed within a first subset of the plurality of trapping regions and is prevented from being performed within a second subset of the plurality of trapping regions (e.g., by the absence of one or more quantum objects at the second position). For example, in one exemplary scenario, each of the trapping regions of the plurality of trapping regions is within a first subset of trapping regions when the corresponding shim switch 115 or control switch 116 is in a first switch position, and each of the trapping regions of the plurality of trapping regions is within a second subset of trapping regions when the corresponding shim switch 115 or control switch 116 is in a second switch position.

[0115] In this manner, conditional operations may be performed by confinement device 100 and / or a quantum system including confinement device 100. In various embodiments, the conditional operations include one or more of a junction exchange operation, a linear exchange operation, a partial row or column shift, sorting of any quantum objects, gating one or more quantum objects, cooling of a quantum object, measuring a quantum object, initializing a quantum object, swapping the positions of quantum objects located within the same trapping region, or other transport or non-transport operations. For example, controller 30 may decide to perform an operation on a first set of quantum objects arbitrarily positioned within the plurality of trapping regions and / or periodic or quasi-periodic array of trapping regions 105, and to prevent the performance of the operation on a second set of quantum objects arbitrarily positioned within the plurality of trapping regions and / or periodic or quasi-periodic array of trapping regions 105, even when quantum system 900 is specifically configured for parallel execution of operations.

[0116] 4A-4G and 5A-5D present schematic diagrams illustrating the execution of two exemplary conditional actions enabled through the use of the conditional motion primitives illustrated in FIGS. 2 and / or 3, according to an exemplary embodiment.

[0117] 4A-4G are schematic diagrams illustrating the conditional execution of a junction swap operation. For example, as shown by the solid line representations of quantum objects 405, 410 (e.g., 405A, 410A) in FIGS. 4A and 4G, a junction swap operation may be performed to move a first quantum object 405 from trapping region 110C to trapping region 110A through junction 120, and to move a second quantum object 410 from trapping region 110A to another trapping region 110C, causing first quantum object 405 and second quantum object 410 to swap positions through junction 120. As will be appreciated, each of quantum objects 405, 410 may be one or more quantum objects. As shown by the dashed representations of quantum objects 405, 410 (e.g., 405B, 410B), the use of conditional motion primitives can prevent quantum objects 405, 410 from changing position or cause quantum objects 405, 410 to be collected in either trapping region 110A, 110C.

[0118] 4A, a portion of a plurality of trapping regions and / or a periodic or quasi-periodic array 105 of trapping regions 110 is shown at an initial time t0. The portion of a plurality of trapping regions and / or a periodic or quasi-periodic array includes trapping regions 110A, 110B, 110C, and 110D connected by junctions 120. A first quantum object 405 is positioned at an initial position (e.g., center) of the third trapping region 110C, and a second quantum object 410 is positioned at an initial position (e.g., center) of the first trapping region 110A.

[0119] 4B illustrates a portion of a plurality of trapping regions and / or a periodic or quasi-periodic arrangement at a first time t1. Between the initial time t0 and the first time t1, conditional motion primitives are executed. For example, in a scenario in which a first quantum object 405 is moved from the third trapping region 110C to the first trapping region 110A, the first quantum object 405 is moved from an initial position within the third trapping region 110C to a first position within the third trapping region, as shown by the solid line representation of the first quantum object 405A. In a scenario in which the first quantum object 405 is not moved from the third trapping region 110C to the first trapping region 110A, the first quantum object 405 is moved from an initial position within the third trapping region 110C to a second position within the third trapping region, as shown by the dashed line representation of the first quantum object 405B. Whether the first quantum object 405 is moved from its initial position in the third trapping region 110C to the first position or the second position is controlled through the switch position of the shim switch 115 or control switch 116 corresponding to the third trapping region 110C.

[0120] Similarly, upon execution of the conditional motion primitive, in a scenario in which the second quantum object 410 is moved from the first trapping region 110A to the third trapping region 110C, the second quantum object 410 is moved from an initial position within the first trapping region 110A to a first position within the first trapping region, as shown by the solid line representation of the second quantum object 410A. In a scenario in which the second quantum object 410 is not moved from the first trapping region 110A to the third trapping region 110C, the second quantum object 410 is moved from an initial position within the first trapping region 110A to a second position within the first trapping region, as shown by the dashed line representation of the second quantum object 410B. Whether the second quantum object 410 is moved from its initial position in the first trapping region 110A to the first position or the second position is controlled through the switch position of the shim switch 115 or control switch 116 corresponding to the first trapping region 110A.

[0121] 4C illustrates a portion of the plurality of trapping regions and / or the periodic or quasi-periodic arrangement of trapping regions at a second time t2. Between the first time t1 and the second time t2, a downward shift is performed in the vertical group of trapping regions (including trapping regions 110C and 110D). For example, a control voltage signal applied to control electrodes 114 of electrode sequence 130 corresponding to the vertical group of trapping regions causes all of the quantum objects located within the trapping regions of the vertical group of trapping regions to move downward along their respective trapping regions (possibly through junctions 120).

[0122] 4D illustrates a portion of the plurality of trapping regions and / or the periodic or quasi-periodic arrangement of trapping regions at a third time t3. Between the second time t2 and the third time t3, a rightward shift is performed in the horizontal group of trapping regions (including trapping regions 110A and 110B). For example, a control voltage signal applied to control electrodes 114 of electrode sequence 130 corresponding to the horizontal group of trapping regions causes all of the quantum objects located within the trapping regions of the horizontal group of trapping regions to move rightward along their respective trapping regions (possibly through junctions 120).

[0123] 4E illustrates a portion of the plurality of trapping regions and / or the periodic or quasi-periodic arrangement of trapping regions at a fourth time t4. Between the third time t3 and the fourth time t4, an upward shift is performed in the vertical group of trapping regions (including trapping regions 110C and 110D). For example, a control voltage signal applied to control electrodes 114 of electrode sequence 130 corresponding to the vertical group of trapping regions causes all of the quantum objects located within the trapping regions of the vertical group of trapping regions to move upward along their respective trapping regions (possibly through junctions 120).

[0124] 4F illustrates a portion of the plurality of trapping regions and / or the periodic or quasi-periodic arrangement of trapping regions at a fifth time t5. Between the fourth time t4 and the fifth time t5, a leftward shift is performed in the horizontal group of trapping regions (including trapping regions 110A and 110B). For example, a control voltage signal applied to control electrodes 114 of electrode sequence 130 corresponding to the horizontal group of trapping regions causes all of the quantum objects located within the trapping regions of the horizontal group of trapping regions to move leftward along their respective trapping regions (possibly through junctions 120).

[0125] FIG. 4G shows the final time t corresponding to the completion of the conditional junction exchange operation. f 1 illustrates a portion of a plurality of trapping regions and / or a periodic or quasi-periodic arrangement of trapping regions at a fifth time t5 and a final time t f , and an inverse conditional motion primitive is executed between the first trapping region 110A and the second trapping region 110C. The inverse conditional motion primitive is the inverse of the conditional motion primitive executed between the initial time t0 and the first time t1. For example, the inverse conditional motion primitive is executed by reversing the time order of the steps shown in FIG. 2 and / or FIG. 3. For example, execution of the inverse conditional motion primitive causes any quantum objects 405, 410 located at the second position or the first position in the first trapping region 110A to be moved to their initial positions in the first trapping region 110A, and any quantum objects 405, 410 located at the second position or the first position in the third trapping region 110C to be moved to their initial positions in the third trapping region 110C.

[0126] Depending on the switch positions of the shim switch 115 and / or the control switch 116 of the first trapping region 110A in the conditional motion primitive between the initial time t0 and the first time t1, the second quantum object 410 is either placed in the initial position of the third trapping region 110C (as shown by the solid line representation of the second quantum object 410A) or is placed in the initial position of the third trapping region 110C (as shown by the solid line representation of the second quantum object 410A) at the final time t f Depending on the switch positions of the shim switch 115 and / or control switch 116 of the third trapping region 110C in the conditional motion primitive between the initial time t0 and the first time t1, the first quantum object 405 is either placed in the initial position of the first trapping region 110A (as shown by the solid line representation of the first quantum object 405A) or placed in the initial position of the first trapping region 110A (as shown by the solid line representation of the first quantum object 405A) at the final time tf 4B) or is positioned at the initial position of the third trapping region 110C at (as indicated by the dashed line representation of the first quantum object 405B).

[0127] Thus, whether an action is performed or prevented from being performed within each trapping region is controlled through the switch position of the shim switch 115 or control switch 116 of each trapping region (as controlled by the respective switch signal) upon execution of the conditional motion primitive.

[0128] 5A-5D present schematic diagrams illustrating the conditional execution of a linear swap operation. For example, as shown by the solid line representations of quantum objects 505, 510 (e.g., 505A, 510A) in FIGS. 5A and 5D, a linear swap operation may be conditionally executed to swap the order of a first quantum object 505 and a second quantum object 510 within the trapping region 110. As shown by the dashed line representations of quantum objects 505, 510 (e.g., 505B, 510B), the use of conditional motion primitives can prevent the quantum objects 505, 510 from swapping order within the trapping region 110. As will be appreciated, each of the quantum objects 505, 510 may be one or more quantum objects 505, 510.

[0129] 5A illustrates a pair of quantum objects 505, 510 in trapping region 110 at an initial time t0. At the initial time t0, first quantum object 505 and second quantum object 510 are arranged in a first order at an initial position in trapping region 110.

[0130] 5B illustrates a pair of quantum objects 505, 510 at a first time t1. Between the initial time t0 and the first time t1, conditional motion primitives are executed. For example, in a scenario in which the order of the first quantum object 505 and the second quantum object 510 is swapped, the first quantum object 505 and the second quantum object 510 are moved from their initial positions within the trapping region 110C to first positions within the trapping region, as shown by the solid line representations of the first quantum object 505A and the second quantum object 510A. In a scenario in which the order of the first quantum object 505 and the second quantum object 510 is not swapped, the first quantum object 505 and the second quantum object 510 are moved from their initial positions within the trapping region 110C to second positions within the trapping region, as shown by the dashed line representations of the first quantum object 505B and the second quantum object 510B. Whether the first quantum object 505 and the second quantum object 510 are moved from their initial positions in the trapping region 110 to the first position or the second position is controlled through the switch position of the shim switch 115 or control switch 116 corresponding to the trapping region 110.

[0131] 5C illustrates the pair of quantum objects 505, 510 at a second time t2. Between the first time t1 and the second time t2, a swap operation is performed at a first location of the trapping region 110. For example, the order of the first quantum object 505A and the second quantum object 510A has been swapped, as indicated by the solid line representation of the first quantum object 505A and the second quantum object 510A. For example, by the second time t2, the first quantum object 505A and the second quantum object 510A have been swapped from a first order to a second order. The order of the first quantum object 505B and the second quantum object 510B has not been swapped, as indicated by the dashed line representation of the first quantum object 505B and the second quantum object 510B. Notably, the swap operation was performed at the first location of the trapping region 110. Thus, when first quantum object 505B and second quantum object 510B are disposed in the second position of trapping region 110, the execution of the exchange operation is prevented.

[0132] FIG. 5D shows the final time t corresponding to the completion of the conditional linear exchange operation. f 5 illustrates a pair of quantum objects 505, 510 at a second time t2 and a final time t f 2 and / or 3. An inverse conditional motion primitive is executed between the initial time t0 and the first time t1. The inverse conditional motion primitive is the opposite of the conditional motion primitive executed between the initial time t0 and the first time t1. For example, the inverse conditional motion primitive is executed by reversing the time order of the steps shown in FIG. 2 and / or FIG. 3. For example, execution of the inverse conditional motion primitive causes the first and second quantum objects 505, 510, which are positioned at the second position or the first position in the trapping region 110, to be returned to their initial positions in the trapping region 110.

[0133] Depending on the switch positions of the shim switches 115 and / or control switches 116 of the trapping region 110 in the conditional motion primitive between the initial time t0 and the first time t1, the first quantum object 505 and the second quantum object 510 are either placed in their initial positions in the trapping region 110 in the first order (as shown by the solid line representations of the first quantum object 505A and the second quantum object 510A) or are placed in their initial positions in the trapping region 110 at the final time t f 5B) in the initial position of trapping region 110 in the second order (as indicated by the dashed line representation of first quantum object 505B and second quantum object 510B).

[0134] 6A-6D are schematic diagrams illustrating the conditional execution of conditional non-transport operations. A non-transport operation includes the interaction of one or more qubits with a field, such as an electromagnetic field (e.g., a laser and / or microwave beam or pulse), a magnetic field, a magnetic field gradient, an electric field, or another field. For example, a non-transport operation may include the interaction of one or more qubits with an manipulation signal. Some non-limiting examples of non-transport operations include a single-qubit quantum gate, a two- or more-qubit quantum gate, a quantum initialization operation, a quantum measurement operation (i.e., a readout operation), a cooling operation, a loading operation, a quantum object ejection (e.g., causing a quantum object to no longer be trapped by confinement device 100), or other operation involving the interaction of one or more qubits with a field.

[0135] 6A and 6D , a non-transport operation may be conditionally performed to cause a first quantum object 605 and possibly a second quantum object 610 to interact with a field within the trapping region 110. As will be appreciated, each of the quantum objects 605, 610 may be one or more quantum objects. As shown by the dashed representations of the quantum objects 605, 610 (e.g., 605B, 610B), the use of conditional motion primitives can prevent the quantum objects 605, 610 from performing a non-transport operation within the trapping region 110. For example, an interaction between the first quantum object 605 and possibly the second quantum object 610 may be prevented.

[0136] While Figures 6A-6D illustrate the conditional non-transport operation being performed on two quantum bits (e.g., first quantum object 605 and second quantum object 610), in various embodiments, the conditional non-transport operation may be performed on a single quantum bit (e.g., only first quantum object 605) or on more than two quantum bits by transporting an additional quantum bit to the initial position of trapping region 110 before initial time t0, or by removing a quantum object (e.g., second quantum object 610) from its initial position in the trapping region before initial time t0.

[0137] 6A illustrates a pair of quantum objects 605, 610 in trapping region 110 at an initial time t0. At the initial time t0, first quantum object 605 and second quantum object 610 are arranged in a first order at an initial position in trapping region 110.

[0138] 6B illustrates a pair of quantum objects 605, 610 at a first time t1. Between the initial time t0 and the first time t1, conditional motion primitives are executed. For example, in a scenario in which a non-transport operation is executed on the first quantum object 605 and the second quantum object 610, the first quantum object 605 and the second quantum object 610 are moved from an initial position within the trapping region 110C to a first position within the trapping region, as shown by the solid line representations of the first quantum object 605A and the second quantum object 610A. In a scenario in which a non-transport operation is not executed on the first quantum object 605 and the second quantum object 610, the first quantum object 605 and the second quantum object 610 are moved from an initial position within the trapping region 110C to a second position within the trapping region, as shown by the dashed line representations of the first quantum object 605B and the second quantum object 610B. Whether the first quantum object 605 and the second quantum object 610 are moved from their initial positions in the trapping region 110 to the first position or the second position is controlled through the switch position of the shim switch 115 or control switch 116 corresponding to the trapping region 110.

[0139] 6C illustrates the pair of quantum objects 605, 610 at a second time t2. At the second time t2, a field 620 (one or more operating signals such as a laser beam or pulse, a magnetic field, a magnetic field gradient, a microwave beam or pulse, an electric field, and / or the like) is substantially applied to a first position of trapping region 110 (e.g., position B in FIG. 6C) and is substantially not applied to a second position of trapping region 110 (e.g., position D in FIG. 6C). For example, as shown in the solid line representations of first quantum object 605A and second quantum object 610A, field 620 is incident on and / or is substantially acted upon by field 620. For example, at a second time t2, the first quantum object 605A and the second quantum object 610A interact with the field 620, resulting in a non-transport operation. As indicated by the dashed representation of the first quantum object 605B and the second quantum object 610B, the first quantum object 605B and the second quantum object 610B do not substantially interact with the field 620. As used herein, when the first and second quantum objects 605B, 610B are substantially unaffected by or do not substantially interact with the field 620, the interaction of the first quantum object 605B, 610B with the field 620 is not sufficient to mediate, cause, or drive the non-transport operation that the field 620 is intended to mediate, cause, or drive (at the first location). In particular, the non-transport operation occurred at the first location of the trapping region 110. Thus, when first quantum object 605B and second quantum object 610B are disposed at the second position in trapping region 110, non-transport operations are prevented from occurring (e.g., via interaction with field 620).

[0140] Figure 6D shows the final time t corresponding to the completion of the conditional non-transport operation. f6 illustrates a pair of quantum objects 605, 610 at a second time t2 and a final time t f 2 and / or 3. An inverse conditional motion primitive is executed between the initial time t0 and the first time t1. The inverse conditional motion primitive is the opposite of the conditional motion primitive executed between the initial time t0 and the first time t1. For example, the inverse conditional motion primitive is executed by reversing the time order of the steps shown in FIG. 2 and / or FIG. 3. For example, execution of the inverse conditional motion primitive causes the first and second quantum objects 605, 610, which are positioned at the second position or the first position in the trapping region 110, to be returned to their initial positions in the trapping region 110.

[0141] Depending on the switch positions of the shim switches 115 and / or control switches 116 of the trapping region 110 in the conditional motion primitive between the initial time t0 and the first time t1, the first quantum object 605 and the second quantum object 610 are either placed in their initial positions in the trapping region 110 (as shown by the solid line representations of the first quantum object 605A and the second quantum object 610A) where they were interacting with (and therefore having a non-transport operation performed on) the field 620, or are placed in their initial positions in the trapping region 110 at a final time t f 6. The first quantum object 605B and the second quantum object 610B are either positioned in an initial position of the trapping region 110 (as indicated by the dashed line representations of the first quantum object 605B and the second quantum object 610B) that is not substantially interacting with (and therefore not performing a non-transport operation on) the field 620 at

[0142] Another example of a conditional operation is a partial row or column shift. In various embodiments, a partial row or column shift may be used to load quantum objects into the periodic or quasi-periodic array 105 and / or replace missing quantum objects. For example, in one exemplary embodiment, trapping regions 110A and 110B are part of a row of trapping regions, and trapping regions 110C and 110D are part of a column of trapping regions. For example, it may be determined that one or more quantum objects are missing from a particular trapping region 110 of the confinement device 100. For example, during execution of a quantum circuit and / or algorithm, it may be determined that a trapping region 110 that the controller 30 expected to be occupied by one or more quantum objects currently does not contain each of the one or more quantum objects. To continue execution of the quantum circuit and / or algorithm, the controller 30 may determine that the empty trapping region is no longer empty and / or that the missing quantum object or objects are replaced by filling the empty trapping region and / or replacing the missing quantum object or objects by shifting quantum objects in the corresponding row or column. For example, controller 30 determines that a first set of quantum objects should be shifted along corresponding rows or columns of the trapping regions to cause an empty trapping region to no longer be empty. A conditional motion primitive may be used to cause a first set of quantum objects, each disposed within a respective trapping region of a first subset of the trapping regions, to be shifted while other quantum objects (each disposed within a respective trapping region of a second subset of the trapping regions) are not shifted.

[0143] 7A-7D present schematic diagrams illustrating the conditional execution of partial row shifting. As will be appreciated, partial column shifting can be performed similarly to the exemplary embodiment illustrated in FIGS. 7A-7D, but using columns of trapping region 110 rather than the illustrated rows of the trapping region.

[0144] 7A illustrates a first quantum object 705A disposed at an initial position 710 in a first trapping region 110A, a second quantum object 705B disposed at an initial position in a second trapping region 110B, and a third quantum object 705C disposed at an initial position in a third trapping region 110C. As will be appreciated, each of the quantum objects 705 may be one or more quantum objects. The first, second, and third trapping regions 110A, 110B, 110C form a first row 720 of trapping regions. A second row 722 of trapping regions 110 includes fourth, fifth, and sixth trapping regions 110D, 110E, 110F. A fourth quantum object 705D is disposed at an initial position 710 in the fourth trapping region 110D, and a fifth quantum object 705E is disposed at an initial position in the sixth trapping region 110F. At initial time t0, there are no quantum objects disposed in the fourth trapping region 110D.

[0145] In the illustrated exemplary scenario, execution of the quantum circuit requires that each of the first, second, third, fourth, fifth, and sixth trapping regions 110 be occupied by a respective quantum object 705. Because the first row 720 of trapping regions is already fully occupied (e.g., the first quantum object 705A occupies the first trapping region 110A, the second quantum object 705B occupies the second trapping region 110B, and the third quantum object 705C occupies the third trapping region 110C), no modifications to the first, second, and third trapping regions are necessary. Similarly, because the fourth trapping region 110D is occupied by the fourth quantum object 705D, no modifications to the fourth trapping region 110D are necessary. However, because each of the trapping regions 110A, 110B, 110C, 110D, 110E, and 110F has a common structure and includes a control electrode 114 in communication with a common broadcast control voltage source and a switchable control voltage source (e.g., common among the trapping regions), the transport action used to cause the fifth trapping region 110E to become occupied affects the first, second, third, and fourth trapping regions.

[0146] 7B illustrates a first row 710 and a second row 722 of trapping regions at a first time t1. Between the initial time t0 and the first time t1, a conditional motion primitive is executed in each of the illustrated trapping regions. The conditional motion primitive is a transport operation configured to move or transport a quantum object disposed in an initial position 710 of each trapping region 110 to either a first position 712 or a second position 714 of each trapping region 110 based on the switch position of the respective shim switch 115 and / or control switch 116 corresponding to each trapping region 110. For example, for trapping regions without a desired or required change, execution of the conditional motion primitive causes each quantum object 705 to be transported to the respective second position 714 of each trapping region 110. Since the fifth quantum object 705E, currently disposed within the sixth trapping region 110F, should be shifted to the fifth trapping region 110E, execution of the conditional motion primitive causes the fifth quantum object 705E to be transported to the first position 712 of the sixth trapping region 110F.

[0147] Whether each quantum object 705 is moved or transported from its respective initial position 710 in its respective trapping region 110 to its respective first position 712 or its respective second position 714 is controlled through the switch position of its respective shim switch 115 or its respective control switch 116 corresponding to its respective trapping region 110.

[0148] 7C illustrates the first row 720 and second row 722 of trapping regions 110 at a second time t2. Between the first time t1 and the second time t2, all of the quantum objects 705 have shifted to the left. For example, the first, second, third, and fourth quantum objects 705A, 705B, 705C, and 705D have shifted from their respective second positions 714 in their respective trapping regions 110A, 110B, 110C, and 110D to their respective first positions 712 in their respective trapping regions. The fifth quantum object 705E has shifted from the first position 712 in the sixth trapping region 110F to the second position 714 in the fifth trapping region 110E. In addition, a sixth quantum object 705F has been loaded and / or shifted into the sixth trapping region 110F (e.g., from another trapping region not shown and / or from the loading portion of the confinement device 100).

[0149] FIG. 7D shows a final time t corresponding to the completion of the partial row shift operation. f 7 illustrates a first row 720 and a second row 722 of the trapping region 110 at a second time t2 and a final time t f 2 and / or 3. An inverse conditional motion primitive is executed in each of the illustrated trapping regions between time t0 and time t1. The inverse conditional motion primitive is a transport operation configured to move or transport a quantum object disposed in either the first position 712 or the second position 714 of each trapping region 110 to the initial position 710 of the respective trapping region 110 based on the switch position of the respective shim switch 115 and / or control switch 116 corresponding to the respective trapping region 110. The inverse conditional motion primitive is an inverse motion primitive of the conditional motion primitive executed between the initial time t0 and the first time t1. For example, the inverse conditional motion primitive is executed by reversing the time order of the steps shown in FIG. 2 and / or FIG. 3. For example, the execution of the inverse conditional motion primitive is executed between time t2 and time t3.f , causing first, second, third, and fourth quantum objects 705A, 705B, 705C, 705D to be moved or transported from their respective first positions 712 in their respective trapping regions 110A, 110B, 110C, 110D to their respective initial positions 710 in their respective trapping regions. For example, execution of the inverse conditional motion primitive may cause a transition between times t and t f , causing the fifth and sixth quantum objects 705E, 705F to be moved or transported from their respective second positions 714 in their respective trapping regions 110E, 110F to their respective initial positions 710 in their respective trapping regions. Thus, at time t f wherein each of the first, second, third, fourth, fifth, and sixth trapping regions 110A, 110B, 110C, 110D, 110E, 110F is occupied by a respective quantum object 110A, 110B, 110C, 110D, 110E, 110F disposed at a respective initial position 710 of the respective trapping region 110.

[0150] 7A-7D should be understood to illustrate one exemplary embodiment of a conditional row-shift operation in which junctions between trapping regions are not illustrated. Exemplary embodiments in which both two-dimensional and / or three-dimensional junctions are disposed between trapping regions of two-dimensional and / or three-dimensional quantum object confinement devices are similar and contemplated. For example, one skilled in the art will be able to perform conditional column-shift operations and / or conditional shift operations through various junctions in the confinement devices based on the disclosure provided herein.

[0151] Thus, whether an action is performed or prevented from being performed within each trapping region is controlled through the switch position of the respective shim switch 115 or control switch 116 (as controlled by the respective switch signal) of each trapping region upon execution of the conditional motion primitive.

[0152] Additionally, the use of inverse conditional motion primitives allows and / or enables maintaining a bounded number of potential wells (e.g., to confine quantum objects) by repeatedly applying conditional motion primitives followed by inverse conditional motion primitives, and / or keeping the size of the system finite while supporting arbitrarily long operation counts.

[0153] As noted above, various embodiments provide methods for and / or use with various confinement devices. For example, the confinement devices may be optical traps, magnetic traps, dipole traps, quadrupole traps, and / or the like, including multiple trapping regions of similar and / or common structure. In various embodiments, a confinement control field source provides switchable, broadcast, and / or shim control signals used to generate and / or provide the respective confinement potentials used to execute the conditional motion primitives and inverse conditional motion primitives. The conditional motion primitives and inverse conditional motion primitives enable the use of broadcast control signals to multiple trapping regions having similar and / or common structure, while independently controlling whether a conditional operation is executed in each of the multiple trapping regions.

[0154] For example, a control voltage signal is an example of a control signal generated by a respective confinement control field source. A control voltage source is an example of a confinement control field source. Some other examples of confinement control field sources include lasers and corresponding optics for providing one or more laser beams used to generate the trapping laser field, current sources for providing currents to generate electric and / or magnetic confinement potentials, and magnetic field sources for providing magnetic fields or magnetic field gradients used to shape the magnetic confinement potentials. For example, in various embodiments, the control signals include broadcast control signals (e.g., broadcast control voltage signals), switchable control signals (e.g., switchable control voltage signals), and / or shim control signals (e.g., shim voltage signals). These control signals are used to control the confinement fields of the respective confinement devices.

[0155] Figures 4A-4G, 5A-5D, 6A-6D, and 7A-7D illustrate example conditional operations that are performed when quantum objects are located at respective positions along the linear and / or one-dimensional trapping regions in the initial step (see, e.g., Figures 4A, 5A, 6A, and 7A) and final step (e.g., Figures 4G, 5D, 6D, and 7D) of each conditional operation. Figure 8 illustrates an example conditional operation when a quantum object 805 is located at a junction 820 between a set of linear and / or one-dimensional trapping regions 110A, 110B, 110C, and 110D.

[0156] For example, the conditional operation may include transporting the quantum object 805 from the junction to a location along a selected one of the trapping regions of the set of linear and / or one-dimensional trapping regions 110A, 110B, 110C, 110D. For example, each control switch 116 is used to selectively couple one or more switchable control electrodes 835 (e.g., 835A, 835B, 835C, 835D) to a switchable control voltage source 5A, 5B to cause the quantum object 805 to be transported to a selected one of the trapping regions of the set of linear and / or one-dimensional trapping regions.

[0157] 8, conditional motion primitives are used to transport quantum object 805 from junction 820 to a location along first trapping region 110A. For example, switchable control electrode 835A of first trapping region 110A is placed in communication with first switchable control voltage source 5A (e.g., via respective control switch 116) such that a first switchable control signal U(t) configured to attract quantum object 805 is applied to switchable control electrode 835A of first trapping region 110A. The switchable control electrodes 835B, 835C, 835D of the second, third, and fourth trapping regions 110B, 110C, 110D are placed in communication with one or more second switchable control voltage sources 5B (e.g., via respective control switches 116) such that respective second switchable control signals S1(t), S2(t), S3(t) configured to repel the quantum object 805 are applied to the respective switchable control electrodes 835B, 835C, 835D of the second, third, and fourth trapping regions 110B, 110C, 110D. In the illustrated embodiment, the quantum object is transported from the junction 820 to the left of the first trapping region 110A by the conditional operation. In a scenario in which the quantum object is transported from the junction 820 upward into the third trapping region 110C, the respective voltage signals applied to the switchable control electrodes 835A, 835B, 835C, 835D are rotated a quarter clockwise (e.g., U(t) is applied to the switchable control electrode 835C, S1(t) is applied to the switchable control electrode 835B, S2(t) is applied to the switchable control electrode 835D, and S3(t) is applied to the switchable control electrode 835A). Similarly, the controller 30 may control the application of the respective voltage signals to the switchable control electrodes 835A, 835B, 835C, 835D to cause the quantum object to be transported from the junction 820 into the second trapping region 110B or the fourth trapping region 110D, as appropriate.

[0158] In one exemplary embodiment, two or more of the respective second switchable control signals S1(t), S2(t), S3(t) are equal to one another and / or are generated by the same second switchable controlled voltage source 5B. In one exemplary embodiment, the respective second switchable control signals S1(t), S2(t), S3(t) are different from one another and / or are generated by different second switchable controlled voltage sources 5B. In various embodiments, the junction 820 may link and / or allow the quantum object 805 to be transported between two or more trapping regions 110. For a junction 820 linking n trapping regions 110, the respective switchable voltage signals U(t), S1(t), ..., S n-1 (t) is applied to each switchable control electrode 835 to cause the execution of the conditional motion primitive.

[0159] As will be appreciated, execution of the conditional operation may terminate with quantum object 805 being disposed at junction 820 (or another junction) or at a location along a selected linear and / or one-dimensional trapping region, depending on the application. As will be appreciated, junction 820 may be one of multiple junctions in quantum object confinement device 100. The quantum object may be disposed at various points before, during, and / or after execution of the conditional operation at a selected one of the multiple junctions, depending on the application.

[0160] Exemplary Quantum Systems Including Quantum Object Confinement Devices As described above, execution of a conditional operation may, in various embodiments, be performed on one or more quantum objects trapped within a trapping region of a quantum object confinement device controlled by a controller 30 of a quantum computer 910. FIG. 9 presents a schematic diagram of an exemplary quantum system 900 including a quantum object confinement device 100 (e.g., an ion trap, an optical trap, and / or the like), according to one illustrative embodiment. In various embodiments, the quantum system 900 comprises a computing entity 90 and a quantum computer 910. In various embodiments, the quantum computer 910 comprises a controller 30 and a quantum processor 915. In various embodiments, the quantum processor 915 includes the quantum object confinement device 100 enclosed in a cryostat and / or vacuum chamber 40, one or more voltage sources 50, one or more manipulation sources 60, and / or the like.

[0161] In one exemplary embodiment, one or more manipulation sources 60 comprise one or more lasers (e.g., optical lasers, microwave sources, and / or the like). In various embodiments, one or more manipulation sources 60 are configured to manipulate one or more quantum objects within quantum object confinement device 100 and / or cause the evolution of their controlled quantum states. For example, in one exemplary embodiment, if one or more manipulation sources 60 comprise one or more lasers, the lasers may provide one or more laser beams to the confinement device within cryogenic and / or vacuum chamber 40. The laser beams may be used to perform one or more conditional operations, such as conditional execution of quantum gates, co-cooling, and / or the like. In various embodiments, manipulation sources 60 are controlled by respective driver-controller elements 1015 of controller 30 (see FIG. 10 ).

[0162] In various embodiments, quantum computer 910 comprises one or more voltage sources 50. For example, voltage source 50 includes a controlled voltage source (e.g., switchable controlled voltage sources 5A, 5B, broadcast controlled voltage sources 10A, 10B, 10C), switch signal generator 20 (e.g., 20A, 20B), shim voltage source 15 (e.g., 15A, 15B), at least one RF driver and / or voltage source configured to generate and supply an RF voltage signal to RF rail 112, and / or the like. Voltage source 50 may, in an exemplary embodiment, be electrically coupled to corresponding elements of quantum object confinement device 100 (e.g., control electrode 114, shim switch 115 and / or control switch, RF rail 112). For example, voltage source 50 is configured to supply a periodic voltage signal to RF rail 112 and a control voltage signal to control electrode 114. In various embodiments, the switch signal generators 20 are each in communication with a respective switch (e.g., shim switch 115 and / or control switch 116) configured to control the conditional execution (and / or prevention) of each trapping region of the periodic or quasi-periodic array 105 of trapping regions and / or trapping regions 110 of the containment device 100. In various embodiments, the voltage sources 50 are controlled by respective driver controller elements 1015 of the controller 30.

[0163] In various embodiments, computing entity 90 is configured to enable a user to provide input to quantum computer 910 (e.g., via a user interface of computing entity 90), receive and display output from quantum computer 910, and / or perform similar operations thereon. Computing entity 90 may communicate with controller 30 of quantum computer 910 via one or more wired or wireless networks 70 and / or via direct wired and / or wireless communication. In an exemplary embodiment, computing entity 90 may translate, organize, format, and / or perform similar operations on information / data, quantum circuits, quantum computing algorithms, and / or the like into a computing language, executable instructions, command set, and / or the like that controller 30 can understand and / or implement.

[0164] In various embodiments, controller 30 is configured to control voltage source 50, a cryogenic and / or vacuum system that controls the temperature and pressure within cryogenic and / or vacuum chamber 40, manipulation source 60, and / or other systems configured to control various environmental conditions (e.g., temperature, pressure, and / or the like) within cryogenic and / or vacuum chamber 40, and / or manipulate one or more quantum objects within confinement device 100, and / or cause controlled evolution of the quantum states of one or more quantum objects. For example, controller 30 may cause controlled evolution of the quantum states of one or more quantum objects within confinement device 100 to execute a quantum circuit and / or algorithm. In various embodiments, the quantum objects confined within confinement device 100 are used as qubits in quantum computer 910. In one exemplary embodiment, quantum processor 915 includes multiple multi-quantum object crystals, each including a first quantum object used as a qubit quantum object of the quantum processor and a second quantum object used as a co-cooling quantum object for use in cooling qubit quantum objects of the same multi-quantum object crystal.

[0165] Exemplary Controller In various embodiments, quantum object confinement device 100, including a periodic or quasi-periodic arrangement 105 of multiple trapping regions and / or one-dimensional trapping regions 110, is incorporated into a quantum computer 910. In various embodiments, quantum computer 910 further comprises a controller 30 configured to control various elements of quantum computer 910. For example, controller 30 may be configured to control voltage source 50, a cryogenic and / or vacuum system that controls the temperature and pressure within cryogenic and / or vacuum chamber 40, manipulation source 60, and / or other systems configured to control environmental conditions (e.g., temperature, humidity, pressure, and / or the like) within cryogenic and / or vacuum chamber 40, and / or manipulate one or more quantum objects within the confinement device, and / or cause controlled evolution of the quantum state of one or more quantum objects.

[0166] 10 , in various embodiments, the controller 30 may include various controller elements, including processing elements and / or devices 1005, memory 1010, driver controller elements 1015, communication interfaces 1020, analog-to-digital converter elements 1025, and / or similar elements. For example, the processing elements and / or devices 1005 may include programmable logic devices (CPLDs), microprocessors, coprocessing entities, application-specific instruction set processors (ASIPs), integrated circuits, application-specific integrated circuits (ASICs), field-programmable gate arrays (FPGAs), programmable logic arrays (PLAs), hardware accelerators, other processing devices and / or circuits, and / or the like, and / or controllers. The term circuitry may refer to an entirely hardware embodiment or a combination of hardware and a computer program product. In one exemplary embodiment, the processing elements and / or devices 1005 of the controller 30 include and / or communicate with a clock.

[0167] For example, the memory 1010 may include non-transitory memory such as volatile and / or non-volatile memory storage such as one or more of a hard disk, ROM, PROM, EPROM, EEPROM, flash memory, MMC, SD memory card, memory stick, CBRAM, PRAM, FeRAM, RRAM, SONOS, racetrack memory, RAM, DRAM, SRAM, FPM DRAM, EDO DRAM, SDRAM, DDR SDRAM, DDR2 SDRAM, DDR3 SDRAM, RDRAM, RIMM, DIMM, SIMM, VRAM, cache memory, register memory, and / or the like. In various embodiments, memory 1010 may store qubit records corresponding to qubits of the quantum computer (e.g., in a qubit record data store, qubit record database, qubit record table, and / or the like stored in classical / semiconductor-based memory 1010), calibration tables, executable cues, computer program code (e.g., in one or more computer languages, dedicated controller languages, and / or the like), one or more libraries, one or more waveforms / control voltage trains, and associated metadata, and / or the like.In one exemplary embodiment, execution of at least a portion of the computer program code stored in memory 1010 (e.g., by the processing element and / or device 1005) causes the controller 30 to perform one or more steps, operations, processes, procedures, and / or the like described herein, such as determining that a conditional operation should be performed in a first set of trapping regions, determining that a conditional operation is prevented from being performed in a second set of trapping regions, identifying the first set of trapping regions, identifying the second set of trapping regions, controlling the operation of the switch signal generator 20 and the control voltage sources 5, 10 to cause execution of a conditional motion primitive, controlling the operation of the control voltage sources 5, 10, the operation source 60, and / or the like to cause execution of a conditional operation in the first set of trapping regions, and / or the like.

[0168] In various embodiments, the driver controller element 1015 may include one or more driver and / or controller elements, each configured to control one or more drivers. In various embodiments, the driver controller element 1015 may comprise a driver and / or a driver controller. For example, a driver controller may be configured to cause one or more corresponding drivers to operate according to executable instructions, commands, and / or the like scheduled and executed by the controller 30 (e.g., by the processing element and / or device 1005). In various embodiments, the driver controller element 1015 may enable the controller 30 to operate the operation source 60. In various embodiments, the driver may be a laser driver, a vacuum component driver, a driver for controlling the flow of current and / or voltage applied to RF rail 112, control electrode 112, switches (e.g., shim switch 115, control switch 116), shim electrode 118, and / or other electrodes used to maintain and / or control the trapping potential of confinement device 100 and / or cause transport of one or more quantum objects or multi-quantum object crystals, a cryogenic and / or vacuum system component driver, and / or the like. For example, the driver may control and / or comprise RF voltage drivers, control voltage sources 5, 10, shim voltage source 15, switch signal generator 20, and / or other voltage sources 50 that supply voltages and / or electrical signals (e.g., periodic voltage signals, control voltage signals, and / or the like) to control electrode 114, shim electrode 118, switches (e.g., shim switch 115, control switch 116), and / or RF rail 112.

[0169] In various embodiments, the controller 30 comprises means for transmitting and / or receiving signals from one or more optical receiver components, such as a camera, a MEMs camera, a CCD camera, a photodiode, a photomultiplier tube, and / or the like. For example, the controller 30 may comprise one or more analog-to-digital converter elements 1025 configured to receive signals from one or more optical receiver components, calibration sensors, and / or the like.

[0170] In various embodiments, controller 30 may comprise a communications interface 1020 for interfacing and / or communicating with computing entity 90. For example, controller 30 may comprise a communications interface 1020 for receiving executable instructions, command sets, and / or the like from computing entity 90, and for providing to computing entity 90 output received from quantum computer 910 (e.g., from an optical concentration system) and / or results of processing the output. In various embodiments, computing entity 90 and controller 30 may communicate via a direct wired and / or wireless connection and / or one or more wired and / or wireless networks 70.

[0171] Example Operation of the Controller In various embodiments, the controller 30 is configured to control various elements of the quantum system 900 to cause the quantum system to perform one or more conditional operations. For example, the quantum system 900 includes a quantum object confinement device 100 that confines multiple quantum objects in respective one-dimensional trapping regions 110, which in one exemplary embodiment are arranged in a periodic or quasi-periodic array 105 of trapping regions 110. When the controller 30 determines that a conditional operation should be performed, the controller 30 identifies a first set of trapping regions in which the conditional operation should be performed and / or identifies a second set of trapping regions in which execution of the conditional operation should be prevented. The controller 30 controls operation of the switch signal generators 20 corresponding to the first set of trapping regions to cause the conditional operation to be performed in each trapping region of the first set of trapping regions. The controller 30 controls operation of the switch signal generators 20 corresponding to the second set of trapping regions to prevent execution of the conditional operation in each trapping region of the second set of trapping regions.

[0172] 11 presents a flowchart illustrating various processes, procedures, operations, and / or the like, performed, for example, by controller 30, to cause execution of a conditional operation in a first set of trapping regions and prevent execution of the conditional operation in a second set of trapping regions. In particular, controller 30 is configured to control operation of the conditional operation in a confinement device 100 in which at least one control electrode is a switchable control electrode. For example, controller 30 is configured to control operation of the conditional operation in a confinement device 100 in which at least some of the control voltage signals applied to control electrodes 114 are broadcast to control electrodes of multiple trapping regions. For example, controller 30 is configured to control operation of the conditional operation in a quantum system 900 in which the number of control voltage sources 5, 10 scales and / or is proportional to the number of control electrodes 114 per trapping region 110 and / or does not scale and / or is not proportional to the number of trapping regions 110 in confinement device 100.

[0173] Beginning with step / action 1102, controller 30 identifies a conditional action to be performed. For example, controller 30 of quantum system 900 controls the operation of quantum processor 915 to cause quantum processor 915 to execute a quantum circuit and / or algorithm. During execution of the quantum circuit and / or algorithm, controller 30 determines that a conditional action should be performed. In various embodiments, the conditional action is an action that should be performed in some trapping regions of the plurality of trapping regions and / or periodic or quasi-periodic array of trapping regions and is prevented from being performed in other trapping regions of the plurality of trapping regions and / or periodic or quasi-periodic array.

[0174] As will be understood based on the above, the control electrodes of each trapping region and / or group of trapping regions are in electrical communication with the same broadcast control voltage source and / or switchable control voltage source. In particular, quantum system 900 is configured to perform operations in multiple trapping regions 110 in parallel. However, based on quantum circuits and / or algorithms, conditional operations should be performed on some quantum objects confined by confinement device 100 and not on other quantum objects confined by the confinement device.

[0175] At step / operation 1104, controller 30 determines a first set of trapping regions 110 in which the conditional operation should be performed and a second set of trapping regions 110 in which the conditional operation should not be performed. For example, controller 30 may determine a first set of quantum objects in which the conditional operation should be performed. Controller 30 may then determine which trapping regions 110 the first set of quantum objects are disposed in. The trapping regions 110 in which the first set of quantum objects are disposed are then identified as the first set of trapping regions, and the remainder of the trapping regions are then identified as the second set of trapping regions. In another example, controller 30 may determine a second set of quantum objects in which the conditional operation should not be performed. Controller 30 may then determine which trapping regions 110 the second set of quantum objects are disposed in. The trapping regions 10 in which the second set of quantum objects are disposed are then identified as the second set of trapping regions, and the remainder of the trapping regions are then identified as the first set of trapping regions.

[0176] In various embodiments, the conditional action may not be a binary action (e.g., performed or prevented from being performed). For example, the conditional action may include a degree to which the action may be performed. In such embodiments, multiple sets of trapping regions 110 are identified, each set of trapping regions 110 having a similar degree of conditional action to be performed therein.

[0177] In step / operation 1106, the controller 30 determines a switch position for each trapping region 110. For example, the switch position determined for each trapping region 110 in the first set of trapping regions is configured to cause execution of a conditional action in the corresponding trapping region 110. For example, the switch position determined for each trapping region 110 in the second set of trapping regions is configured to prevent execution of a conditional action in the corresponding trapping region 110.

[0178] As described above, the switch position of a switch corresponding to a trapping region controls whether execution of a conditional motion primitive within the trapping region causes one or more quantum objects disposed at an initial position of the trapping region to move to a first position of the trapping region or a second position of the trapping region, the first position and the second position being different positions along the corresponding one-dimensional trapping region 110. For example, in one exemplary embodiment, controller 30 determines that the switch position of each switch of each trapping region in the first set of trapping regions should be set to a first switch position, and that the switch position of each switch of each trapping region in the second set of trapping regions should be set to a second switch position.

[0179] In step / operation 1108, controller 30 controls the operation of various components of quantum system 900 to cause the execution of conditional operations in the first set of trapping regions 110 and prevent the execution of conditional operations in the second set of trapping regions 110. For example, controller 30 controls the operation of switch signal generator 20 to cause each switch (e.g., control switch 116, shim switch 115) to be in the respective switch position determined in step / operation 1106.

[0180] For example, the controller 30 controls the operation of the first switch signal generator 20A such that the first switch signal generator 20A generates and supplies a digital switch signal corresponding to the determined switch position of the corresponding first trapping region 110A. The switch signal is supplied to the corresponding shim switch 115 and / or control switch 116A, causing the corresponding shim switch 115 and / or control switch 116A to be in the determined switch position. The operation of the other switch signal generators 20 of the voltage source 50 is similarly controlled such that each switch (e.g., shim switch 115 and / or control switch 116) corresponding to a trapping region of the plurality of trapping regions and / or periodic or quasi-periodic array of trapping regions is set to its respective determined switch position.

[0181] The controller 30 further controls the operation of the control voltage sources 5, 10 and / or shim voltage source 15 of the voltage source 50 such that a conditional motion primitive is executed in each of the plurality of trapping regions and / or trapping regions of the periodic or quasi-periodic array of trapping regions, where whether one or more quantum objects disposed in the respective trapping regions are disposed in the first position or the second position of the respective trapping region after execution of the conditional motion primitive is determined based on the switch position of the respective switch.

[0182] The controller 30 further controls operation of the control voltage sources 5, 10, the shim voltage source 15, the manipulation source 60, and / or the like to cause execution of a conditional action at a first location of each of the plurality of trapping regions and / or trapping regions 110 of the periodic or quasi-periodic array of trapping regions. As will be appreciated, in a trapping region of the second set of trapping regions, no quantum object is present at the first location of the trapping region, thus preventing execution of the conditional action in the trapping region of the second set of trapping regions.

[0183] The controller 30 may further control the operation of the control voltage sources 5, 10 and / or shim voltage source 15 of the voltage source 50 such that the inverse conditional motion primitive is executed in each of the trapping regions of the plurality of trapping regions and / or periodic or quasi-periodic array of trapping regions to reposition the quantum object at its initial position in the respective trapping region 110.

[0184] Exemplary Computing Entity 12 presents an illustrative schematic diagram of an exemplary computing entity 90 that may be used in conjunction with embodiments of the present invention. In various embodiments, computing entity 90 is part of a quantum system 900 and / or is configured to enable a user to provide input to quantum computer 910 (e.g., via a user interface of computing entity 90) and receive, display, analyze, and / or perform similar operations on output from quantum computer 910.

[0185] 12, computing entity 90 may include an antenna 1212, a transmitter 1204 (e.g., wireless), a receiver 1206 (e.g., wireless), and a processing device (e.g., one or more processing elements) 1208 that provides signals to and receives signals from transmitter 1204 and receiver 1206, respectively. The signals provided to and received from transmitter 1204 and receiver 1206, respectively, may include signaling information / data in accordance with the air interface standard of the applicable wireless system for communicating with various entities, such as controller 30, other computing entities 10, and / or the like. In this regard, computing entity 90 may be operable with one or more air interface standards, communication protocols, modulation types, and access types. For example, computing entity 90 may be configured to receive and / or provide communications using a wired data transmission protocol such as Fiber Distributed Data Interface (FDDI), Digital Subscriber Line (DSL), Ethernet, Asynchronous Transfer Mode (ATM), Frame Relay, Data Over Cable Service Interface Specification (DOCSIS), or any other wired transmission protocol.Similarly, the computing entity 90 may support any of the following standards: General Packet Radio Service (GPRS), Universal Mobile Telecommunications System (UMTS), Code Division Multiple Access 2000 (CDMA2000), CDMA2000 1X (1xRTT), Wideband Code Division Multiple Access (WCDMA), Global System for Mobile Communications (GSM), Enhanced Data rates for GSM Evolution (EDGE), Time Division Synchronous Code Division Multiple Access (TD-SCDMA), Long Term Evolution (LTE), Evolved Universal Terrestrial Radio Access Network (E-UTRAN), Evolved Data Optimized (EVDO), High Speed ​​Packet Access (HSPA), High Speed ​​Downlink Packet Access (HSDPA), IEEE 802.11 (Wi-Fi), Wi-Fi It may be configured to communicate over a wireless external communications network using any of a variety of protocols, such as Direct, 802.16 (WiMAX), Ultra Wideband (UWB), Infrared (IR) protocol, Near Field Communication (NFC) protocol, Wibree, Bluetooth protocol, Wireless Universal Serial Bus (USB) protocol, and / or any other wireless protocol.Computing entity 90 may communicate using such protocols and standards using Border Gateway Protocol (BGP), Dynamic Host Configuration Protocol (DHCP), Domain Name System (DNS), File Transfer Protocol (FTP), Hypertext Transfer Protocol (HTTP), HTTP over TLS / SSL / Secure, Internet Message Transfer Protocol (IMAP), Network Time Protocol (NTP), Simple Mail Transfer Protocol (SMTP), Telnet, Transport Layer Security (TLS), Secure Sockets Layer (SSL), Internet Protocol (IP), Transmission Control Protocol (TCP), User Datagram Protocol (UDP), Datagram Congestion Control Protocol (DCCP), Stream Control Transmission Protocol (SCTP), Hypertext Markup Language (HTML), and / or the like.

[0186] Through these communication standards and protocols, computing entity 90 can communicate with various other entities using concepts such as Unstructured Supplementary Service Information / Data (USSD), Short Message Service (SMS), Multimedia Messaging Service (MMS), Dual Tone Multi-Frequency Signaling (DTMF), and / or Subscriber Identity Module Dialer (SIM dialer). Computing entity 90 can also download modifications, add-ons, and updates to its firmware, software (including, e.g., executable instructions, applications, program modules), and operating system, for example. In various embodiments, computing entity 90 is configured to communicate over one or more wired and / or wireless networks using network interface 1220.

[0187] Computing entity 90 may also include user interface devices including one or more user input / output interfaces (e.g., a display 1216 and / or speaker / speaker driver coupled to processing device 1208, and a touchscreen, keyboard, mouse, and / or microphone coupled to processing device 1208). For example, the user output interface may be configured to provide applications, browsers, user interfaces, interfaces, dashboards, screens, web pages, pages, and / or similar terms used interchangeably herein running on and / or accessible via computing entity 90 to cause display or audible presentation of information / data and for interactive manipulation via one or more user input interfaces. The user input interface may comprise any of a number of devices that enable computing entity 90 to receive data, such as a keypad 1218 (hard or soft), a touch display, a voice / speech or motion interface, a scanner, reader, or other input device. In embodiments including a keypad 1218, the keypad 1218 may include (or cause to be displayed) conventional numeric (0-9) and related keys (#, *), and other keys used to operate the computing entity 90, and may include a set of keys that can be activated to provide a full set of alphabetic keys or a full set of alphanumeric keys. In addition to providing input, the user input interface may be used to activate or deactivate certain features, such as, for example, a screen saver and / or sleep mode. Through such input, the computing entity 90 may collect information / data, user interaction / input, and / or the like.

[0188] Computing entity 90 may also include volatile storage or memory 1222 and / or nonvolatile storage or memory 1224, which may be embedded and / or removable. For example, the nonvolatile memory may be ROM, PROM, EPROM, EEPROM, flash memory, MMC, SD memory card, memory stick, CBRAM, PRAM, FeRAM, RRAM, SONOS, racetrack memory, and / or the like. The volatile memory may be RAM, DRAM, SRAM, FPM DRAM, EDO DRAM, SDRAM, DDR SDRAM, DDR2 SDRAM, DDR3 SDRAM, RDRAM, RIMM, DIMM, SIMM, VRAM, cache memory, registered memory, and / or the like. The volatile and nonvolatile storage or memory may store databases, database instances, database management system entities, data, applications, programs, program modules, scripts, source code, object code, byte code, compiled code, interpreted code, machine code, executable instructions, and / or the like to implement the functionality of computing entity 90.

[0189] conclusion Many modifications and other embodiments of the inventions set forth herein will come to mind to one skilled in the art to which these inventions pertain having the benefit of the teachings presented in the foregoing descriptions and the associated drawings. It is to be understood, therefore, that the inventions are not to be limited to the specific embodiments disclosed, and that modifications and other embodiments are intended to be included within the scope of the appended claims. Although specific terms are employed herein, they are used in a generic and descriptive sense only and not for purposes of limitation. [Explanation of symbols]

[0190] 5 Switchable Controlled Voltage Source 5A First Switchable Controlled Voltage Source 5B Second Switchable Controlled Voltage Source 10, 10A, 10B, 10C Broadcast Control Voltage Source 15 Shim Voltage Source 15A First Shim Voltage Source 15B Second Shim Voltage Source 20, 20A, 20B Switch Signal Generator 30 Controllers 40 Cryostat and / or vacuum chamber 50 Voltage Source 60 Operation source 70 Wired and / or Wireless Networks 90 Computing Entities 100 Confinement Device 100' Quantum Object Confinement Device 105 Periodic or Quasi-Periodic Arrays 110, 110A, 110B, 110C, 110D, 110E, 110F 1D trapping area 110, 110X, 110Y, 110Z trapping areas 110' Circulation Trapping Area Trapping Area 110'n and 100'm circular path trapping area 112, 112A, 112B RF Rail 113 axes 114, 114A, 114B, 114C, 114D, 114E control electrodes 115 Shim Switch 116, 116A, 116B control switches 116, 116n, 116m control switch 118 Shim Electrode 119 Capacitor 120 Joint 130, 130A, 130B electrode sequence 132 first switchable control electrode 134 second switchable control electrode 136 Broadcast Control Electrode 200 Potential Wells 200A, 200B potential wells 205 Quantum Objects 405, 410, 405A, 405B, 410A, 410B quantum objects 505, 510, 505A, 505B, 510A, 510B quantum objects 605, 610, 605A, 610A quantum objects 620 places 705 Quantum Objects 705A, 705B, 705C, 705D, 705E Quantum Objects 710 Initial position 712 1st position 714 Second position 720 First Line 722 Second Line 805 Quantum Objects 820 Joint 835, 835A, 835B, 835C, 835D Switchable Control Electrode 900 Quantum Systems 910 Quantum Computer 915 Quantum Processor 1005 Processing elements and / or devices 1010 memory 1015 Driver Controller Element 1020 Communication Interface 1025 Analog-to-Digital Converter Elements 1204 Transmitter 1206 Receiver 1208 Processing Device 1212 Antenna 1216 Display 1218 keypad 1220 network interface 1222 Volatile Storage or Memory 1224 Non-volatile storage or memory

Claims

1. 1. A quantum object confinement device, comprising:

1. A quantum object confinement device comprising one or more electrode sequences, each electrode sequence including a respective plurality of control electrodes configured to control an electrical potential within a respective one of one or more trapping regions of the quantum object confinement device, wherein a first switchable control electrode of one or more switchable control electrodes of the respective plurality of control electrodes is configured to be in switchable electrical communication with a respective selected switchable control voltage source of two or more switchable control voltage sources.

2. 2. The quantum object confinement device of claim 1, wherein the one or more switchable control electrodes include the first switchable control electrode and the second switchable control electrode, and the first switchable control electrode and the second switchable control electrode are each configured to be in switchable electrical communication with a respective one of the first switchable control voltage source and the second switchable control voltage source of the two or more switchable control voltage sources.

3. 3. The quantum object confinement device of claim 2, further comprising one or more switches, each electrode sequence of the one or more electrode sequences being associated with a respective switch of the one or more switches, each switch being configured to control switching of the electrical communication of the first switchable control electrode and the second switchable control electrode to a respective control voltage source of the two or more switchable control voltage sources.

4. 2. The quantum object confinement device of claim 1, further comprising one or more switches, each electrode sequence of the one or more electrode sequences being associated with a respective switch of the one or more switches, the respective switch being configured to control switching of electrical communication between the one or more switchable control electrodes and the respective selected switchable control voltage source of the two or more switchable control voltage sources.

5. 10. The quantum object confinement device of claim 1, wherein each of the plurality of control electrodes further comprises one or more broadcast control electrodes each configured to electrically communicate with a respective broadcast control voltage source of one or more broadcast control voltage sources.

6. 6. The quantum object confinement device of claim 5, wherein the one or more electrode sequences include a plurality of electrode sequences, and the one or more broadcast control electrodes among the respective plurality of control electrodes of the plurality of electrode sequences are configured to be in electrical communication with the one or more broadcast control voltage sources.

7. 8. A quantum object confinement device as described in claim 7, wherein the number of broadcast control voltage sources increases or decreases depending on the number of control electrodes among the respective plurality of control electrodes, and does not increase or decrease depending on the number of electrode sequences.

8. 2. The quantum object confinement device of claim 1, further comprising one or more switches, each electrode sequence associated with a respective switch of the one or more switches, each switch configured to control switching between two or more switch positions, each switch position of the two or more switch positions configured to cause the first switchable control electrode to be in electrical communication with a selected control voltage source of two or more selectable control voltage sources, and to cause the second switchable control electrode to be in electrical communication with a different control voltage source of the two or more selectable control voltage sources.

9. 9. A quantum object confinement device according to claim 8, wherein each of the switches is a double-pole, double-throw switch.

10. 9. A quantum object confinement device according to claim 8, wherein each said switch is configured to be controlled by a respective switch signal.

11. 11. The quantum object confinement device of claim 10, wherein each of the switch signals is a digital signal.

12. 9. The quantum object confinement device of claim 8, wherein the one or more electrode sequences include a plurality of electrode sequences, the one or more switches include a plurality of switches, and each switch of the plurality of switches is independently controlled.

13. the respective trapping regions of the one or more trapping regions are circuit trapping regions, the two or more switchable control voltage sources are configured to provide a plurality of control voltage signals, the plurality of control voltage signals are divided into two subsets of voltage signals, the two subsets of voltage signals comprise a left partition and a right partition, the respective plurality of control electrodes are configured to: (a) when the first switchable control electrode is in electrical communication with the first switchable control voltage source, the plurality of control electrodes are each in electrical communication with a respective control voltage signal of the left partition, the voltage signal of the left partition being on a respective electrode of the respective plurality of control electrodes; 10. The quantum object confinement device of claim 1, configured to achieve: (a) when the first switchable control electrode is in electrical communication with the second switchable control voltage source, the plurality of control electrodes are each configured to be in electrical communication with a respective control voltage signal for the right partition, the voltage signal for the right partition being configured to cause the one or more potential wells formed by application of the voltage signal for the right partition to move around the circular path trapping region in a first direction; and (b) when the first switchable control electrode is in electrical communication with the second switchable control voltage source, the plurality of control electrodes are each configured to be in electrical communication with a respective control voltage signal for the right partition, the voltage signal for the right partition being configured to cause the one or more potential wells formed by application of the voltage signal for the right partition to move around the circular path trapping region in a second direction.

14. 1. A system comprising: two or more switchable control voltage sources each configured to generate a respective switchable control voltage signal; a quantum object confinement device comprising one or more electrode sequences, each electrode sequence of the one or more electrode sequences including a respective plurality of control electrodes configured to control an electrical potential in a respective one of one or more trapping regions of the quantum object confinement device, a first switchable control electrode of the one or more switchable control electrodes of the respective plurality of control electrodes being in switchable electrical communication with a respective selected switchable control voltage source of two or more switchable control voltage sources, and configured such that a respective selected switchable control voltage signal of two or more switchable control voltage signals is applied to the first switchable control electrode; a controller configured to control operation of each of the two or more switchable control voltage sources and with which of the two or more switchable control voltage sources a respective set of one or more switchable control electrodes is in electrical communication.

15. 15. The system of claim 14, further comprising one or more broadcast control voltage sources each configured to generate a respective broadcast control voltage signal, the respective plurality of control electrodes further comprising one or more broadcast control electrodes in electrical communication with a respective broadcast control voltage source of the one or more broadcast control voltage sources and each configured to have the respective broadcast control voltage signal applied thereto.

16. 16. The system of claim 15, wherein the one or more electrode sequences include a plurality of electrode sequences, and wherein the one or more broadcast control electrodes of the respective plurality of control electrodes of the plurality of electrode sequences are configured to be in electrical communication with the one or more broadcast control voltage sources.

17. 17. The system of claim 16, wherein the number of broadcast control voltage sources is proportional to the number of broadcast control electrodes in the respective plurality of control electrodes and is not proportional to the number of electrode sequences.

18. 15. The system of claim 14, wherein the quantum object confinement device further comprises one or more switches, each electrode sequence associated with a respective switch of the one or more switches, the respective switch configured to control switching between two or more switch positions, each switch position of the two or more switch positions configured to cause the set of one or more switchable control electrodes to be in electrical communication with a selected set of one control voltage sources of two or more selectable control voltage sources.

19. 20. The system of claim 18, wherein each said switch is a double-pole, double-throw switch.

20. 20. The system of claim 18, further comprising one or more switch signal generators, wherein the controller is configured to control operation of the one or more switch signal generators, and wherein the respective switches are configured to be controlled by respective switch signals generated by respective switch signal generators of the one or more switch signal generators.

21. 21. The system of claim 20, wherein each of the switch signals is a digital signal.

22. 20. The system of claim 18, wherein the one or more electrode sequences comprise a plurality of electrode sequences, the one or more switches comprise a plurality of switches, the one or more switch signal generators comprise a plurality of switch signal generators, and the controller is configured to independently control operation of each switch signal generator of the plurality of switch signal generators.

23. the respective trapping regions of the one or more trapping regions are circular path trapping regions, the two or more switchable control voltage signals are configured to provide a plurality of control voltage signals, the plurality of control voltage signals are divided into two subsets of voltage signals, the two subsets of voltage signals comprise a left partition and a right partition, the respective plurality of control electrodes are each configured to: (a) when the first switchable control electrode is in electrical communication with the first switchable control voltage source, the plurality of control electrodes are each configured to be in electrical communication with a respective control voltage signal of the left partition, the voltage signal of the left partition being applied to a respective electrode of the respective plurality of control electrodes; 15. The system of claim 14, wherein the system is configured to achieve: (a) causing one or more potential wells formed by application of the voltage signal to move around the circular path trapping region in a first direction; and (b) when the first switchable control electrode is in electrical communication with the second switchable control voltage source, the plurality of control electrodes are each configured to be in electrical communication with a respective control voltage signal for the right partition, the voltage signal for the right partition being configured to cause the one or more potential wells formed by application of the voltage signal for the right partition on a respective one of the respective plurality of control electrodes to move around the circular path trapping region in a second direction.

24. 1. A system comprising: two or more switchable control voltage sources each configured to generate a respective switchable control voltage signal; a plurality of broadcast control voltage sources each configured to generate a respective broadcast control voltage signal; a quantum object confinement device comprising a plurality of electrode sequences, each electrode sequence including a respective plurality of control electrodes configured to control an electrical potential within a respective one of a plurality of trapping regions of the quantum object confinement device; one or more first switchable control electrodes of the respective plurality of control electrodes are in switchable electrical communication with a respective set of selected switchable control voltage sources of the two or more switchable control voltage sources, and are each configured such that a respective subset of selected switchable control voltage signals of the two or more switchable control voltage signals is applied to the one or more first switchable control electrodes; a quantum object confinement device, wherein a plurality of broadcast control electrodes of the respective plurality of control electrodes are each in electrical communication with a respective broadcast control voltage source of the plurality of broadcast control voltage sources, whereby the respective broadcast control voltage sources are in electrical communication with a respective broadcast control electrode of at least two electrode sequences; a controller configured to control operation of each of the two or more switchable control voltage sources and with which of the two or more switchable control voltage sources a respective set of one or more switchable control electrodes is in electrical communication.

25. further comprising a plurality of switch signal generators each configured to generate a respective switch signal; the quantum object confinement device further comprises a plurality of switches; each electrode sequence is associated with a respective switch of the plurality of switches; each switch configured to control switching between two or more switch positions, each of the two or more switch positions configured to cause the set of one or more switchable control electrodes to be in electrical communication with a selected subset of two or more selectable control voltage sources; the respective switches are configured to be controlled by respective switch signals generated by respective switch signal generators of the plurality of switch signal generators; 25. The system of claim 24, wherein the controller is configured to individually control the operation of each of the plurality of switch signal generators.

26. 26. The system of claim 25, wherein the controller is configured to perform a conditional action within the subset of the plurality of trapping regions at least in part by controlling the operation of the plurality of switch signal generators, whereby (a) for each electrode sequence whose corresponding trapping region is part of the subset of the plurality of trapping regions for which the conditional action is to be performed, the respective switch is in a first switch position of the two or more switch positions, and (b) for each electrode sequence whose corresponding trapping region is not part of the subset of the plurality of trapping regions for which the conditional action is to be performed, the respective switch is in a second switch position of the two or more switch positions.

27. 26. The system of claim 25, wherein the controller is configured to control operation of each of the two or more switchable control voltage sources, the plurality of broadcast control voltage sources, and the plurality of switch signal generators to cause a respective quantum object trapped within the respective trapping region to move along the respective trapping region in (a) a first direction when the respective switch is in the first position, and (b) a second direction when the respective switch is in the second position.

28. The controller Identifying the action to be performed; identifying one or more trapping regions of the plurality of trapping regions on which the action is to be performed; determining a respective one of the two or more switch positions for each trapping area of ​​the plurality of trapping areas based on whether the action is to be performed within the respective trapping area; controlling operation of the plurality of switch signal generators based on the respective switch positions determined for each trapping region of the plurality of trapping regions; 26. The system of claim 25, configured to control operation of a first switchable control voltage source, a second switchable control voltage source, and the plurality of broadcast control voltage sources to enable performance of the operation within the one or more trapping regions in which the operation is to be performed.

29. 30. The system of claim 28, wherein the controller is further configured to control operation of the first switchable control voltage source, the second switchable control voltage source, and the plurality of broadcast control voltage sources to prevent execution of the operation in the trapping regions of the plurality of trapping regions where the operation should not be executed.

30. 25. The system of claim 24, wherein the quantum object confinement device further comprises respective shim electrodes each associated with a respective trapping region of the plurality of trapping regions, and wherein the shim voltage source is configured to apply shim voltages to the electrodes configured to induce stray electric fields and / or resulting electric fields that correct for manufacturing defects.

31. 31. The system of claim 30, wherein the shim electrode is in electrical communication with a capacitor, the capacitor being in electrical communication with a switch that enables the capacitor to be switched between (a) being in electrical communication with the shim voltage source and (b) not being in electrical communication with the shim voltage source.

32. The step of applying the shim voltage source to the shim electrodes comprises: closing the switch so that the capacitor is in electrical communication with the shim voltage source, causing the capacitor to charge to the shim voltage; and opening the switch so that the capacitor maintains the shim voltage.

33. The controller Identifying the action to be performed; identifying one or more trapping regions of the plurality of trapping regions on which the action is to be performed; determining a sign of a respective shim signal for each trapping region of the plurality of trapping regions based on whether the operation is to be performed within the respective trapping region, the sign of the respective shim signal for the respective trapping region determining whether the respective shim electrode of the respective trapping region is in electrical communication with a first shim voltage source or a second shim voltage source; controlling operation of a plurality of switch signal generators based on the determined sign of the respective shim signal for each trapping region of the plurality of trapping regions; 31. The system of claim 30, configured to control operation of a first switchable control voltage source, a second switchable control voltage source, and the plurality of broadcast control voltage sources to enable performance of the operation within the one or more trapping regions in which the operation is to be performed.

34. 25. The system of claim 24, wherein the controller is configured to cause execution of a conditional action in each of a first subset of the plurality of trapping regions and to prevent execution of a conditional action in each of a second subset of the plurality of trapping regions.

35. 35. The system of claim 34, wherein the conditional operation is at least one of a junction exchange operation, a linear exchange operation, a partial row or column shift, sorting any quantum object, gating one or more quantum objects, cooling a quantum object, measuring a quantum object, initializing a quantum object, swapping the positions of quantum objects located within the same trapping region, loading or reloading a quantum object, replacing a lost quantum object from another trapping region, interaction of a quantum object with a local field, or other transport or non-transport operation.

36. 25. The system of claim 24, wherein the plurality of trapping regions form a periodic or quasi-periodic array of trapping regions.

37. 25. The system of claim 24, wherein the plurality of broadcast control voltage sources includes a first set of broadcast control voltage sources and a second set of broadcast control voltage sources, and wherein the plurality of broadcast control electrodes of a given electrode sequence are in selective electrical communication with respective broadcast control voltage sources of the first set of broadcast control voltage sources or the second set of broadcast control voltage sources, thereby reducing crosstalk between some sequences of electrodes of the plurality of sequences of electrodes.

38. 38. The system of claim 37, wherein the plurality of broadcast control electrodes of the given electrode sequence are in selective electrical communication with the respective broadcast control voltage sources of the first set of broadcast control voltage sources or the second set of broadcast control voltage sources based on at least one of (a) the switch position of the respective switch of the given electrode sequence, or (b) the switch position of the respective switch of an adjacent electrode sequence.

39. 39. The system of claim 38, wherein the trapping region of the given electrode sequence and the trapping region of the adjacent electrode sequence are joined to each other via a junction.

40. 1. A controller configured to control the operation of a quantum system, comprising: the quantum system comprises a quantum object confinement device comprising two or more first switchable control voltage sources, a plurality of broadcast control voltage sources, and a plurality of electrode sequences each defining a respective trapping region, each electrode sequence of the plurality of electrode sequences including a first switchable control electrode configured to be in switchable electrical communication with a selected switchable control voltage source of the two or more switchable control voltage sources, and a plurality of broadcast control electrodes each configured to be in electrical communication with a respective broadcast control voltage source of the plurality of broadcast control voltage sources; the controller is configured to control operation of the two or more switchable control voltage sources and each of the plurality of broadcast control voltage sources such that each quantum object disposed in a first subset of the plurality of trapping regions is moved along its respective trapping region in a first direction and each quantum object disposed in a second subset of the plurality of trapping regions is moved along its respective trapping region in a second direction; a controller in which the plurality of broadcast control electrodes corresponding to trapping regions in the first subset of trapping regions are in electrical communication with the same plurality of broadcast control voltage sources as the plurality of broadcast control electrodes corresponding to trapping regions in the second subset of trapping regions.

41. 41. The controller of claim 40, wherein the first switchable control electrodes corresponding to trapping regions in the first subset of trapping regions are in electrical communication with the same control voltage source of the two or more switchable control voltage sources.

42. 41. The controller of claim 40, wherein the first switchable control electrodes corresponding to trapping regions in the first subset of trapping regions are in electrical communication with a different one of the two or more switchable control voltage sources relative to the first switchable control electrodes corresponding to trapping regions in the second subset of trapping regions.

43. the quantum system further comprising a shim voltage source configured to generate shim voltages; the quantum object confinement device further comprising a respective shim electrode each associated with a respective trapping region of the plurality of trapping regions; 41. The controller of claim 40, wherein each shim electrode is in selective electrical communication with the shim voltage source.

44. 41. The controller of claim 40, wherein the plurality of trapping regions form a periodic array of trapping regions or a quasi-periodic array of trapping regions.

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