Ultraviolet and ozone cleaning device and method of use

Abstract

A cleaning apparatus for cleaning a substrate is also presented, which includes contacting the substrate with ozone water in a cleaning chamber and irradiating the substrate and ozone water with UV electromagnetic radiation from a UV lamp, wherein at least about 50% of the UV electromagnetic radiation has a wavelength of at least about 280 nm.

Description

[Technical Field]

[0001] FIELD OF THE DISCLOSURE

[0001] Embodiments of the present disclosure relate generally to cleaning systems, and more particularly to ultraviolet and ozone cleaning systems. [Background technology]

[0002]

[0002] Substrates used in the semiconductor manufacturing industry are often cleaned to remove waste materials, such as contaminants or other unwanted particles, that are generated thereon during processing. Substrates may include semiconductor wafers, chamber components, photomasks, etc.

[0003] Contaminants can be removed by cleaning a substrate with ultraviolet-irradiated ozone water. Such water can be irradiated by an ultraviolet radiation source that emits ultraviolet light. However, the present inventors have observed that some ultraviolet-ozone water cleaning devices and methods undesirably contribute to the removal or alteration of additional materials beyond the contaminants being cleaned. The removal or alteration of additional materials can cause defects in the substrate.

[0004] Accordingly, the present inventors have provided an improved cleaning apparatus and method for cleaning substrates. Summary of the Invention

[0005]

[0005] Embodiments of an apparatus and method for cleaning a substrate are provided herein. In some embodiments, the method for cleaning a substrate includes contacting the substrate with ozone water in a cleaning chamber and irradiating the substrate and the ozone water with UV electromagnetic radiation from a UV lamp, wherein at least about 50% of the UV electromagnetic radiation has a wavelength of at least about 280 nm.

[0006]

[0006] In some embodiments, a method for cleaning a substrate includes contacting the substrate with ozone water in a cleaning chamber and irradiating the substrate and ozone water with UV electromagnetic radiation from a low-pressure mercury UV lamp, the cleaning chamber further comprising a thermocouple configured to determine the temperature of the UV lamp and a UV detector, the UV lamp being arranged in thermal communication with a controlled flow of cooling fluid, the flow of cooling fluid being controlled based at least in part on the temperature of the low-pressure mercury UV lamp and a signal generated by the UV detector so that at least about 50% of the UV electromagnetic radiation has a wavelength of at least about 280 nm.

[0007]

[0007] In an embodiment, a cleaning apparatus for cleaning a substrate comprises a UV lamp assembly including a UV lamp disposed above a substrate support disposed in a cleaning chamber, the UV lamp assembly being configured so that during operation, at least about 50% of the UV electromagnetic radiation emitted by the UV lamp assembly has a wavelength of at least about 280 nm, a water inlet for receiving a supply of ozone water, and a water outlet disposed above the substrate support for discharging the ozone water irradiated by the UV lamp assembly and bringing it into contact with a substrate disposed on the substrate support, and the UV electromagnetic radiation emitted by the UV lamp assembly contacts the ozone water and the substrate in the cleaning chamber.

[0008]

[0008] Other further embodiments of the present disclosure are described below.

[0009]

[0009] The embodiments of the present disclosure summarized above and described in more detail below can be understood by reference to the exemplary embodiments of the present disclosure illustrated in the accompanying drawings. However, the accompanying drawings depict only typical embodiments of the present disclosure and therefore should not be considered limiting in scope, as the present disclosure may admit of other equally effective embodiments. [Brief explanation of the drawings]

[0010] [Figure 1]FIG. 1 is a schematic diagram illustrating a multi-chamber processing tool having a cleaning chamber, in accordance with at least some embodiments of the present disclosure. [Figure 2] 2 is a schematic diagram illustrating a cleaning apparatus in a cleaning chamber of the multi-chamber processing tool shown in FIG. 1. [Figure 3] 3 illustrates a cleaning workflow employing the cleaning apparatus shown in FIG. 2, according to at least some embodiments of the present disclosure. DETAILED DESCRIPTION OF THE INVENTION

[0011]

[0013] To facilitate understanding, the same reference numerals have been used, wherever possible, to designate identical elements common to the drawings. The drawings are not drawn to scale and may be simplified for clarity. Elements and features of one embodiment may be beneficially incorporated in other embodiments without further recitation.

[0012]

[0014] As used herein, the terms UV electromagnetic radiation and UV light are used interchangeably and refer to electromagnetic radiation having wavelengths from about 200 nm to about 400 nm.

[0013]

[0015] Embodiments of a cleaning chamber for cleaning a substrate are provided herein. The cleaning chamber is configured to clean the substrate to remove unwanted particles or residue after the substrate has undergone a wet cleaning process. The substrate may be, for example, a semiconductor wafer, a photomask, etc. In the example of a photomask, photoresist may remain on the substrate. UV-irradiated ozone water is flowed over the photoresist, causing the photoresist to dissociate from the photomask. The dissociated residue and water are then removed from the interior region of the cleaning chamber.

[0014]

[0016] In an embodiment, a method for cleaning a substrate includes contacting the substrate with ozone water in a cleaning chamber and irradiating the substrate and ozone water with UV electromagnetic radiation from a UV lamp, wherein at least about 50% of the UV electromagnetic radiation has a wavelength of at least about 280 nm.

[0015]

[0017] In some such embodiments, at least a portion of the ozone water is irradiated with UV electromagnetic radiation before the ozone water contacts the substrate.

[0016]

[0018] In embodiments, the UV lamp is disposed in thermal communication with the controlled flow of cooling fluid, and the method further includes controlling the flow of cooling fluid such that at least about 50% of the UV electromagnetic radiation emitted by the UV lamp has a wavelength of at least about 280 nm. In some such embodiments, the cleaning chamber further includes a thermocouple configured to determine a temperature of the UV lamp, and the method further includes controlling the flow of cooling fluid based at least in part on the temperature of the UV lamp. In some embodiments, the cleaning chamber further includes a UV detector, and the method further includes controlling the flow of cooling fluid based at least in part on a signal generated by the UV detector. In embodiments, the cooling fluid is in physical contact with at least a portion of the UV lamp.

[0017]

[0019] In an embodiment, the UV lamp is configured such that when the temperature of the UV lamp is within a first temperature range, more than about 50% of the UV electromagnetic radiation emitted by the UV lamp is less than or equal to 270 nm, and when the temperature of the UV lamp is within an operating temperature range, more than about 50% of the UV electromagnetic radiation emitted by the UV lamp is greater than or equal to 280 nm, wherein the lower limit of the operating temperature range is greater than the upper limit of the first temperature range.

[0018]

[0020] In embodiments, the UV lamp comprises a coating configured to induce a bathochromic shift in the wavelength of UV electromagnetic radiation. In some embodiments, about 50% or more of the UV electromagnetic radiation emitted by the lamp assembly has a wavelength of about 310 nm to about 370 nm, inclusive. In some embodiments, about 50% or more of the UV electromagnetic radiation has a wavelength of about 310 nm to about 320 nm, inclusive. In some embodiments, about 50% or more of the UV electromagnetic radiation has a wavelength of about 365 nm to about 375 nm, inclusive.

[0019]

[0021] In an embodiment, a method for cleaning a substrate includes contacting the substrate with ozone water in a cleaning chamber and irradiating the substrate and the ozone water with UV electromagnetic radiation from a low-pressure mercury UV lamp, the cleaning chamber further comprising a thermocouple configured to determine the temperature of the UV lamp and a UV detector, the UV lamp being arranged in thermal communication with a controlled flow of cooling fluid, the flow of cooling fluid being controlled based at least in part on the temperature of the low-pressure mercury UV lamp and a signal generated by the UV detector so that at least about 50% of the UV electromagnetic radiation has a wavelength of at least about 280 nm.

[0020]

[0022] In some such embodiments, the cleaning apparatus includes a UV lamp assembly including a UV lamp disposed above a substrate support disposed in a cleaning chamber, the UV lamp assembly being configured such that during operation, at least about 50% of the UV electromagnetic radiation emitted by the UV lamp assembly has a wavelength of at least about 280 nm; a water inlet for receiving a supply of ozone water; and a water outlet disposed above the substrate support for discharging the ozone water irradiated by the UV lamp assembly and contacting it with a substrate disposed on the substrate support, wherein the UV electromagnetic radiation emitted by the UV lamp assembly contacts the ozone water and the substrate in the cleaning chamber.

[0021]

[0023] In some embodiments, the cleaning apparatus comprises a coating disposed on the UV lamp that is configured to cause a bathochromic shift in the wavelength of UV electromagnetic radiation, a coating that is configured to filter out UV electromagnetic radiation having a wavelength less than 280 nm, or a combination thereof.

[0022]

[0024] In some embodiments, the cleaning device comprises an optical filter configured to induce a bathochromic shift in the wavelength of UV electromagnetic radiation, an optical filter configured to filter out UV electromagnetic radiation having a wavelength less than 280 nm, or a combination thereof.

[0023]

[0025] In some embodiments, the cleaning device includes a UV detector and a UV lamp thermally coupled to a controlled flow of cooling fluid, and is configured such that during operation, the flow of cooling fluid is controlled based at least in part on the response of the UV detector.

[0024]

[0026] In some embodiments, the device includes a thermocouple configured to determine the temperature of the UV lamp, and is configured such that during operation, the flow of cooling fluid is controlled based at least in part on the response of the thermocouple, e.g., the temperature of the UV lamp.

[0025]

[0027] In an embodiment, the UV lamp of the cleaning apparatus is a low pressure mercury UV lamp.

[0026]

[0028] FIG. 1 is a schematic diagram illustrating a multi-chamber processing tool 100 having one or more cleaning chambers 130 (three are shown in FIG. 1 ) according to at least some embodiments of the present disclosure. The multi-chamber processing tool 100 described below is shown in an exemplary configuration, and other configurations are also available. The multi-chamber processing tool 100 generally includes a factory interface 102, a transfer chamber 106 coupled to the factory interface 102, and multiple process chambers 105, including cleaning chambers 130, coupled to the transfer chamber 106. The factory interface 102 includes multiple load ports 104 for receiving one or more substrates 112. The one or more substrates 112 may be semiconductor wafers, carrier substrates, photomasks, etc. In some embodiments, the multiple load ports 104 are disposed along a common side of the factory interface 102. A factory interface robot 110 is disposed in an interior region 108 of the factory interface 102 and can transfer or transport the one or more substrates 112 back and forth from the multiple load ports 104 to the transfer chamber 106. The factory interface robot 110 may be configured for rotational movement within the interior region 108, for lateral movement within the interior region 108, or for both.

[0027]

[0029] The transfer chamber 106 is coupled to the factory interface 102 and, in some embodiments, is located on the opposite side of the factory interface 102 from the plurality of load ports 104. The transfer chamber 106 includes a transfer robot 116 disposed therein for transferring one or more substrates 112 received from the factory interface robot 110 to and from one or more process chambers 105 coupled to the transfer chamber. The transfer robot 116 may be configured for rotational movement, lateral movement, or both. For example, lateral movement may be achieved via rails on the floor of the transfer chamber 106 or via wheels or tracks below the transfer robot 116. An arm 122 of the transfer robot 116 can extend and retract to move one or more substrates 112 into and out of each of the plurality of process chambers 105.

[0028]

[0030] In some embodiments, the transfer robot 116 is configured to receive one or more substrates 112 directly from the factory interface robot 110. In some embodiments, the transfer robot 116 is configured to receive one or more substrates 112 indirectly from the factory interface robot 110. For example, in some embodiments, one of the factory interface 102 or the transfer chamber 106 includes a buffer 120 configured to hold one or more of the one or more substrates 112. The transfer robot 116 may be configured to transfer the one or more substrates 112 to the buffer 120, and the transfer robot 116 may be configured to transfer the one or more substrates 112 from the buffer 120 to the plurality of process chambers 105 and back from the plurality of process chambers 105 to the buffer 120.

[0029]

[0031] The transfer chamber 106 may include one or more environmental control devices. For example, the airflow openings in the transfer chamber 106 may include filters to filter the airflow entering the transfer chamber 106. Other environmental control devices may include one or more of a humidity control device, a static control device, a temperature control device, or a pressure control device.

[0030]

[0032] The one or more process chambers 105 may be orthogonally coupled to the transfer chamber 106 or may be coupled at an angle relative to the transfer chamber 106. The multiple process chambers 105 may be in sealing engagement with the transfer chamber 106. The transfer chamber 106 generally operates at atmospheric pressure, but may be configured to operate at vacuum pressure. The multiple process chambers 105 are configured to perform one or more processing steps on one or more substrates 112 being processed within the multichamber processing tool 100. For example, the multiple process chambers 105 may include one or more cleaning chambers 130 (three shown in FIG. 1 ) configured to clean the one or more substrates 112 with a liquid, such as water. The multiple process chambers 105 may include one or more dry cleaning chambers 140 (two shown in FIG. 1 ) configured to perform a dry cleaning process on the one or more substrates 112, for example, via a plasma etching or plasma ashing procedure. The one or more process chambers 105 include at least one bake chamber, such as a bake chamber 150 configured to heat one or more substrates to remove residue or haze left behind after a wet or dry cleaning process. In some embodiments, the one or more cleaning chambers 130 are located on a different side of the transfer chamber 106 than the one or more dry cleaning chambers 140.

[0031]

[0033] 2 is a schematic diagram of a cleaning apparatus 200 housed in a cleaning chamber 130, also referred to herein as a wet cleaning chamber, of the multi-chamber processing tool 100 of FIG. 1. In some embodiments, the cleaning chamber 130 may form a portion of the cleaning apparatus 200. In FIG. 2, the cleaning apparatus 200 is shown being used to clean a substrate 112. While described with respect to a particular cleaning chamber 130 of the multi-chamber processing tool 100 above, the cleaning apparatus 200 may be housed in cleaning chambers having other configurations that may be found in processing tools having other configurations, including being used as a stand-alone tool without being coupled to a multi-chamber processing tool.

[0032]

[0034] The cleaning apparatus 200 for cleaning a substrate includes a UV lamp 202 disposed within a UV lamp assembly 204. The cleaning apparatus 200 further includes a water inlet for receiving a supply of ozone water 208, and a water outlet 206, e.g., a nozzle, disposed above the substrate 112 on the substrate support 236 for discharging the ozone water 208 irradiated by the UV lamp assembly 204 into contact with the substrate 112 disposed on the substrate support 236.

[0033]

[0035] In an embodiment, within the cleaning chamber, UV electromagnetic radiation 212 emitted by UV lamp assembly 204 contacts ozonated water 208 and substrate 112. Ozone water 208 flows from an external source through an ozonated water inlet and then contacts UV electromagnetic radiation 210 along a flow path 214 over at least a portion of the substrate, which then contacts substrate 112. In an embodiment, UV lamp 202 is configured to emit ultraviolet light that contacts both substrate 112 and ozonated water 208.

[0034]

[0036] In an embodiment, the UV lamp 202 may be a low-pressure mercury-vapor ultraviolet lamp. In the embodiment shown in FIG. 2, the UV lamp 202 is housed in a UV lamp assembly 204. In the embodiment shown in FIG. 2, the UV lamp assembly 204 defines a cooling chamber 216 surrounding the UV lamp 202. In the embodiment shown in FIG. 2, the UV lamp assembly 204 may include an upper cover 218 and a lower cover 220 sealingly engaged with each other. The upper cover 218 may be formed from polytetrafluoroethylene (PTFE), and the lower cover 220 may be formed from quartz, which allows transmission of the UV electromagnetic radiation 212 emitted by the UV lamp 202. The UV lamp may be disposed in thermal communication with a controlled flow of a cooling fluid 222, for example, via a flow controller 224, to control the flow of the cooling fluid 222 and thereby the temperature of the UV lamp 202. The UV lamp assembly 204 may have a cooling fluid inlet 226 separate from a cooling fluid outlet 228 along a flow path where the cooling fluid 222 physically contacts the UV lamp 202. The cooling fluid inlet 226 and the cooling fluid outlet 228 may be formed in the top cover 218, as shown in the embodiment of FIG. 2. The cooling fluid inlet 226 may be fluidly coupled to a source of cooling fluid 222, such as cool, dry air. The cooling fluid outlet 228 may be fluidly coupled to a cooling fluid exhaust. The cooling fluid inlet 226 and the cooling fluid outlet 228 are fluidly connected to the cooling chamber 216, which is configured to flow cooling fluid between the cooling fluid inlet 226 and the cooling fluid outlet 228 and over the UV lamps 202. The flow of cooling fluid over the UV lamps 202 cools the UV lamps 202 and controls the temperature of the UV lamps 202.

[0035]

[0037] In an embodiment, the UV lamp assembly 204 further includes a thermocouple 230, or other similar device, configured to determine the temperature of the UV lamp 202. In other embodiments, the UV lamp 202 may be configured with a thermocouple or other similar device (not shown) to determine the temperature of the UV lamp 202.

[0036]

[0038] As described in more detail below, the temperature of the UV lamps 202 can be controlled by controlling the flow of the cooling fluid 222 to affect the peak amplitude of the radiation spectrum emitted by the UV lamps 202. For example, a lower temperature can reduce the peak amplitude, and a higher UV lamp temperature can cause a bathochromic shift of the emitted UV electromagnetic radiation (UV light) to longer wavelength UV light. In embodiments, the cleaning apparatus 200 can include a UV detector 232 configured to monitor the peak amplitude of the radiation spectrum of the UV lamps 202, which can measure at least a portion of the UV spectrum emitted by the UV lamp assembly 204 and be used as feedback to adjust the temperature of the UV lamps 202 by adjusting parameters of the cooling fluid passing through the cooling chamber 216, such as the cooling fluid flow rate and the cooling fluid inlet temperature. The UV detector 232 may be connected to the UV lamp assembly 204, as shown in FIG. 2, or may be located elsewhere such that the UV detector 232 measures, e.g., senses, at least a portion of the UV spectrum of the UV light emitted by the UV lamp assembly 204, and the UV detector 232 and UV lamp 202 may be configured, for example, to be thermally coupled to the controlled flow of the cooling fluid 222 via the flow controller 224, such that during operation, the flow rate of the cooling fluid 222 is controlled based at least in part on the response of the UV detector 232.

[0037]

[0039] 2, the cleaning apparatus 200 may further include an upper reflector 234 that may be disposed within the cooling chamber 216 of the UV lamp assembly 204. The upper reflector 234 extends along and above the UV lamps 202. The upper reflector 234 may be formed of aluminum or an aluminum alloy, or any other suitable material capable of reflecting ultraviolet light.

[0038]

[0040] The cleaning apparatus 200 may also include a substrate support 236 located below the UV lamp assembly 204. The substrate support 236 may be rotatably connected to the cleaning chamber 130. The substrate support 236 may be configured to rotate about a central axis, as shown in FIG. 2, such that the substrate 112 is irradiated with UV electromagnetic radiation 212 and the UV-irradiated ozone water 208a flows over the substrate 112.

[0039]

[0041] The cleaning chamber 130 may have a slit valve door 131 operable to open and close to allow the substrate 112 to be introduced into or removed from the interior of the cleaning chamber 130, such as by a transfer robot 116 (FIG. 1).

[0040]

[0042] In embodiments, the UV lamp 202 may be a low-pressure mercury-vapor UV lamp configured to operate at approximately 30 to 150 watts and emit ultraviolet radiation having a spectrum defined by peak amplitudes at wavelengths from 240 nanometers to 310 nanometers at a design operating temperature. In some embodiments, the lamp emits ultraviolet radiation having a primary ultraviolet wavelength of approximately 254 nanometers. In embodiments, the UV lamp 202 is configured such that, when the temperature of the UV lamp is within a first temperature range, which may be a design temperature range intended to be a temperature range specified by a manufacturer, approximately 50% or more of the UV electromagnetic radiation emitted by the UV lamp is 270 nm or less, e.g., ∼254 nm, and when the temperature of the UV lamp is within an operating temperature range suitable for use with embodiments disclosed herein, the lower limit of the operating temperature range is higher than the upper limit of the first temperature range.

[0041]

[0043] Low-pressure mercury ultraviolet lamps can be characterized as emitting electromagnetic radiation in the UV-C range with a peak or maximum intensity of UV light at wavelengths of about 200 nm to 280 nm, with most low-pressure mercury UV lamps emitting electromagnetic radiation with a peak or maximum intensity of UV light at wavelengths of about 253 nm to 255 nm, e.g., 254 nm.

[0042]

[0044] However, the inventors have found that by controlling the temperature of the UV lamps, sometimes to a temperature higher than that used to generate UV-C electromagnetic radiation, these lamps can also emit UV electromagnetic radiation in the UV-B region, with a peak or maximum intensity of UV light at wavelengths of about 280 nm to 320 nm, with a maximum intensity centered at ∼300 nm or ∼315 nm, or UV electromagnetic radiation in the UV-A region, with a peak or maximum intensity of UV light at wavelengths of about 320 nm to 400 nm, with a maximum intensity centered at ∼365 nm to 370 nm.

[0043]

[0045] The inventors have also discovered that ozone water irradiated with higher energy UV electromagnetic energy becomes more reactive, as the reaction or interaction of ozone water with UV light using lower wavelength light increases the reaction rate at which contaminants on the substrate are removed. However, UV-C wavelength ozone water / UV irradiation, in addition to removing organic contaminants from the substrate, e.g., photoresist or other process, also removes chromium or other metals specifically disposed on the substrate surface as part of the intended final product.

[0044]

[0046] The inventors have observed that by increasing the wavelength of the UV light, i.e., decreasing the energy of the UV light, organic contaminants can be sufficiently removed from a substrate while significantly reducing the rate of removal or destruction of chromium or other metals present. Accordingly, in an embodiment, a cleaning apparatus for cleaning a substrate is configured such that, during operation, about 50% or more of the UV electromagnetic radiation has a wavelength of about 280 nm or greater. In the embodiment shown in Figure 2, the UV lamps 202 are disposed in thermal communication with a controlled flow of cooling fluid 222, and the flow of cooling fluid 222 is controlled (224) so ​​that about 50% or more of the UV electromagnetic radiation 212 emitted by the UV lamps 202 has a wavelength of about 280 nm or greater.

[0045]

[0047] In embodiments, the cleaning chamber 130 further comprises a thermocouple 230 configured to determine the temperature of the UV lamps 202, and the flow of the cooling fluid 222 is controlled based at least in part on the temperature of the UV lamps 202. In other embodiments, the cleaning chamber further comprises a UV detector 232, and the cleaning chamber apparatus is configured to control the flow of the cooling fluid 222 based at least in part on a signal generated by the UV detector 232. In some embodiments, the cleaning chamber can include both a thermocouple and a UV detector.

[0046]

[0048] In some embodiments, the cooling fluid 222 is in physical contact with at least a portion of the UV lamp 202, as shown in Figure 2. However, the UV lamp may be in thermal contact with the cooling fluid without being in direct physical contact with the cooling fluid.

[0047]

[0049] In an embodiment, the UV lamp is configured such that when the temperature of the UV lamp is within a first temperature range, approximately 50% or more of the UV electromagnetic radiation emitted by the UV lamp is below 270 nm, and when the temperature of the UV lamp is within an operating temperature range, approximately 50% or more of the UV electromagnetic radiation emitted by the UV lamp is above 280 nm, the lower limit of the operating temperature range being higher than the upper limit of the first temperature range.

[0048]

[0050] In some embodiments, the cleaning apparatus 200 for cleaning the substrate 112 includes an optical filter 240 configured to induce a bathochromic shift in the wavelength of UV electromagnetic radiation, an optical filter 240 configured to filter out UV electromagnetic radiation having a wavelength less than 280 nm, or a combination thereof.

[0049]

[0051] In an embodiment, the UV lamp 202 comprises a coating 242 configured to produce a bathochromic shift in the wavelength of the UV electromagnetic radiation.

[0050]

[0052] An example of a suitable coating is a phosphor.

[0051]

[0053] In some embodiments, the UV lamp assembly 204 is configured such that, during operation, about 50% or more of the UV electromagnetic radiation has a wavelength of about 310 nm to about 370 nm, inclusive. In other embodiments, about 50% or more of the UV electromagnetic radiation has a wavelength of about 310 nm to about 320 nm, inclusive. In other embodiments, about 50% or more of the UV electromagnetic radiation has a wavelength of about 365 nm to about 375 nm, inclusive.

[0052]

[0054] FIG. 3 illustrates a method 300 for cleaning a substrate 112, which includes contacting the substrate 112 with ozone water 208 in a cleaning chamber and irradiating the substrate and the ozone water, which may include UV-irradiated ozone water 208a, with UV electromagnetic radiation 212 from a UV lamp 202, such as a low-pressure mercury UV lamp (block 302), wherein the apparatus is controlled so that at least about 50% of the UV electromagnetic radiation has a wavelength of at least about 280 nm (block 304).

[0053]

[0055] In some embodiments, the controlling at block 304 includes controlling a flow of a cooling fluid thermally coupled to the UV lamp, wherein the cooling chamber comprises a thermocouple configured to determine a temperature of the UV lamp and a UV detector, and the flow of the cooling fluid is controlled such that about 50% or more of the UV electromagnetic radiation has a wavelength of about 280 nm or greater based at least in part on the temperature of the low-pressure mercury UV lamp, a signal generated by the UV detector, or both.

[0054] Embodiment

[0056] Accordingly, the present disclosure includes, among other embodiments, as set forth in the appended claims. E1. A method for cleaning a substrate, comprising: contacting the substrate with ozone water in a cleaning chamber; and irradiating the substrate and the ozone water with UV electromagnetic radiation from a UV lamp; The method, wherein about 50% or more of the UV electromagnetic radiation has a wavelength of about 280 nm or greater. E2. The method of embodiment E1, wherein at least a portion of the ozone water is irradiated with UV electromagnetic radiation before the ozone water contacts the substrate. E3. The method of embodiment E1 or E2, wherein the UV lamp is positioned in thermal communication with a controlled flow of cooling fluid, and the method further comprises controlling the flow of cooling fluid so that at least about 50% of the UV electromagnetic radiation emitted by the UV lamp has a wavelength of at least about 280 nm. E4. The method of any one of embodiments E1 to E3, wherein the cleaning chamber further comprises a thermocouple configured to determine the temperature of the UV lamp, and the method further comprises controlling the flow of cooling fluid based at least in part on the temperature of the UV lamp. E5. The method of any one of embodiments E1 to E4, wherein the cleaning chamber further comprises a UV detector, and the method further comprises controlling the flow of cooling fluid based at least in part on a signal generated by the UV detector. E6. The method of any one of embodiments E1 to E5, wherein the cooling fluid is in physical contact with at least a portion of the UV lamp. E7. The UV lamp, when the temperature of the UV lamp is within a first temperature range, approximately 50% or more of the UV electromagnetic radiation emitted by the UV lamp is 270 nm or less; configured such that when the temperature of the UV lamp is within an operating temperature range, at least about 50% of the UV electromagnetic radiation emitted by the UV lamp is at or above 280 nm; The method of any one of embodiments E1 to E6, wherein the lower limit of the operating temperature range is greater than the upper limit of the first temperature range. E8. The method of any one of embodiments E1 to E7, wherein the UV lamp comprises a coating configured to impart a bathochromic shift in the wavelength of the UV electromagnetic radiation. E9. The method of embodiment E1-E8, wherein about 50% or more of the UV electromagnetic radiation has a wavelength of about 310 nm or more and about 370 nm or less. E10. The method of embodiment E1-E9, wherein about 50% or more of the UV electromagnetic radiation has a wavelength of about 310 nm or more and about 320 nm or less. E11. The method of embodiment E1-E10, wherein about 50% or more of the UV electromagnetic radiation has a wavelength of about 365 nm or more and about 375 nm or less. E12. A method for cleaning a substrate, comprising: contacting the substrate with ozone water in a cleaning chamber; and irradiating the substrate and ozone water with UV electromagnetic radiation from a low-pressure mercury UV lamp; the cleaning chamber further comprising a thermocouple configured to determine the temperature of the UV lamp and a UV detector; The UV lamp is disposed in thermal communication with a controlled flow of cooling fluid; The method of any one of embodiments E1 to E11, wherein the flow of cooling fluid is controlled based at least in part on the temperature of the low-pressure mercury UV lamp and the signal produced by the UV detector so that about 50% or more of the UV electromagnetic radiation has a wavelength of about 280 nm or greater. E13. A method for cleaning a substrate, comprising: contacting the substrate with ozone water in a cleaning chamber; and irradiating the substrate and ozone water with UV electromagnetic radiation from a low-pressure mercury UV lamp; the cleaning chamber further comprising a thermocouple configured to determine the temperature of the UV lamp and a UV detector; The UV lamp is disposed in thermal communication with a controlled flow of cooling fluid; The method, wherein the flow of cooling fluid is controlled based at least in part on the temperature of the low-pressure mercury UV lamp and a signal generated by a UV detector, such that about 50% or more of the UV electromagnetic radiation has a wavelength of about 280 nm or greater. E14. A cleaning device for cleaning substrates, a UV lamp assembly including a UV lamp disposed above a substrate support disposed within the cleaning chamber, the UV lamp assembly being configured such that during operation, at least about 50% of the UV electromagnetic radiation emitted by the UV lamp assembly has a wavelength of at least about 280 nm; a water inlet for receiving a supply of ozone water; and a water outlet disposed above the substrate support for discharging the ozone water irradiated by the UV lamp assembly into contact with a substrate disposed on the substrate support. Equipped with The cleaning apparatus for cleaning a substrate of any one of embodiments E1 to E13, wherein UV electromagnetic radiation emitted by the UV lamp assembly contacts the ozone water and the substrate in the cleaning chamber. E15. A cleaning apparatus for cleaning a substrate of embodiment E14, comprising a coating disposed on the UV lamp and configured to produce a bathochromic shift in the wavelength of UV electromagnetic radiation, a coating configured to filter out UV electromagnetic radiation having a wavelength less than 280 nm, or a combination thereof. E16. A cleaning apparatus for cleaning a substrate according to embodiment E14 or E15, comprising an optical filter configured to impart a bathochromic shift to the wavelength of UV electromagnetic radiation, an optical filter configured to remove UV electromagnetic radiation having a wavelength less than 280 nm, or a combination thereof. E17. A cleaning apparatus for cleaning a substrate according to any one of embodiments E14 to E16, comprising a UV detector and a UV lamp in thermal communication with the controlled flow of cooling fluid, wherein during operation, the flow of cooling fluid is configured to be controlled based at least in part on the response of the UV detector. E18. A cleaning apparatus for cleaning a substrate as described in embodiments E14 to E17, comprising a thermocouple configured to determine the temperature of the UV lamp, and configured such that during operation, the flow of cooling fluid is controlled based at least in part on the response of the thermocouple. E19. The cleaning apparatus for cleaning a substrate of any one of embodiments E14 to E18, wherein the UV lamp is a low-pressure mercury UV lamp. E20. The cleaning apparatus for cleaning a substrate of any one of embodiments E14 to E19, wherein during operation, about 50% or more of the UV electromagnetic radiation emitted by the UV lamp assembly has a wavelength of about 310 nm or more and about 320 nm or less. E21. The cleaning apparatus for cleaning a substrate of any one of embodiments E14 to E19, wherein during operation, about 50% or more of the UV electromagnetic radiation emitted by the UV lamp assembly has a wavelength of about 365 nm or more and about 375 nm or less.

[0055]

[0057] While the forgoing is directed to embodiments of the present disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof.

Claims

1. A method for cleaning a substrate, comprising: contacting a substrate with ozone water in a cleaning chamber; and irradiating the substrate and the ozone water with UV electromagnetic radiation from a UV lamp; Including, wherein about 50% or more of said UV electromagnetic radiation has a wavelength of about 280 nm or greater.

2. The method of claim 1 , wherein at least a portion of the ozone water is irradiated with the UV electromagnetic radiation before the ozone water contacts the substrate.

3. 10. The method of claim 1, wherein the UV lamp is disposed in thermal communication with a controlled flow of cooling fluid, the method further comprising controlling the flow of cooling fluid such that greater than or equal to about 50% of the UV electromagnetic radiation emitted by the UV lamp has a wavelength of greater than or equal to about 280 nm.

4. 4. The method of claim 3, wherein the cleaning chamber further comprises a thermocouple configured to determine a temperature of the UV lamp, and the method further comprises controlling the flow of the cooling fluid based at least in part on the temperature of the UV lamp.

5. The method of claim 3 , wherein the wash chamber further comprises a UV detector, the method further comprising controlling the flow of the cooling fluid based at least in part on a signal generated by the UV detector.

6. The method of claim 3 , wherein the cooling fluid is in physical contact with at least a portion of the UV lamp.

7. The method of claim 1 , wherein the UV lamp comprises a coating configured to produce a bathochromic shift in the wavelength of UV electromagnetic radiation.

8. the UV lamp, when a temperature of the UV lamp is within a first temperature range, wherein approximately 50% or more of the UV electromagnetic radiation emitted by the UV lamp is 270 nm or less; configured such that when the temperature of the UV lamp is within an operating temperature range, about 50% or more of the UV electromagnetic radiation emitted by the UV lamp is 280 nm or greater; The method according to any one of claims 1 to 7, wherein a lower limit of the operating temperature range is higher than an upper limit of the first temperature range.

9. 8. The method of any one of claims 1 to 7, wherein at least about 50% of the UV electromagnetic radiation has a wavelength of at least about 310 nm and at most about 370 nm.

10. 8. The method of any one of claims 1 to 7, wherein at least about 50% of the UV electromagnetic radiation has a wavelength of at least about 310 nm and at most about 320 nm.

11. 8. The method of any one of claims 1 to 7, wherein about 50% or more of the UV electromagnetic radiation has a wavelength of about 365 nm to about 375 nm.

12. A method for cleaning a substrate, comprising: contacting a substrate with ozone water in a cleaning chamber; and irradiating the substrate and the ozone water with UV electromagnetic radiation from a low-pressure mercury UV lamp; the cleaning chamber further comprising a thermocouple configured to determine a temperature of the UV lamp and a UV detector; the UV lamps are disposed in thermal communication with a controlled flow of cooling fluid; wherein the flow of the cooling fluid is controlled based at least in part on the temperature of the low-pressure mercury UV lamp and a signal produced by the UV detector so that about 50% or more of the UV electromagnetic radiation has a wavelength of about 280 nm or greater.

13. A cleaning apparatus for cleaning a substrate, comprising: a UV lamp assembly including a UV lamp disposed above a substrate support disposed within the cleaning chamber, the UV lamp assembly being configured such that during operation, about 50% or more of the UV electromagnetic radiation emitted by the UV lamp assembly has a wavelength of about 280 nm or greater; a water inlet for receiving a supply of ozone water; and a water outlet disposed above the substrate support for discharging the ozone water irradiated by the UV lamp assembly into contact with the substrate disposed on the substrate support. Equipped with A cleaning apparatus for cleaning a substrate, wherein the UV lamp assembly is configured such that, during operation, UV electromagnetic radiation emitted by the UV lamp assembly contacts the ozone water and the substrate in the cleaning chamber.

14. 14. The cleaning apparatus for cleaning a substrate of claim 13, comprising a coating disposed on the UV lamp and configured to cause a bathochromic shift in wavelength of UV electromagnetic radiation, a coating configured to filter out UV electromagnetic radiation having a wavelength less than 280 nm, or a combination thereof.

15. 14. The cleaning apparatus for cleaning a substrate of claim 13, comprising an optical filter configured to induce a bathochromic shift in the wavelength of UV electromagnetic radiation, an optical filter configured to filter out UV electromagnetic radiation having a wavelength less than 280 nm, or a combination thereof.

16. 14. The cleaning apparatus for cleaning a substrate of claim 13, comprising a UV detector and a UV lamp in thermal communication with a controlled flow of cooling fluid, wherein during operation, the flow of cooling fluid is configured to be controlled based at least in part on a response of the UV detector.

17. 17. The cleaning apparatus for cleaning a substrate of claim 16, further comprising a thermocouple configured to determine a temperature of the UV lamp, and wherein during operation, the flow of the cooling fluid is configured to be controlled based at least in part on a response of the thermocouple.

18. 14. The cleaning apparatus for cleaning a substrate according to claim 13, wherein the UV lamp is a low-pressure mercury UV lamp.

19. 19. The cleaning apparatus for cleaning a substrate according to any one of claims 13 to 18, configured such that during operation, at least about 50% of the UV electromagnetic radiation emitted by the UV lamp assembly has a wavelength of at least about 310 nm and at most about 320 nm.

20. 19. The cleaning apparatus for cleaning a substrate according to any one of claims 13 to 18, configured such that during operation, at least about 50% of the UV electromagnetic radiation emitted by the UV lamp assembly has a wavelength of at least about 365 nm and at most about 375 nm.

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