Techniques for heat distribution in coupled semiconductor systems.

Abstract

Methods, systems, and devices are described for heat distribution engineering in bonded semiconductor systems. The semiconductor system can be formed by bonding various semiconductor components together, and semiconductor materials can be implemented to support thermal paths with thermal conductivity relatively close to that through the bonded semiconductor components of the semiconductor system. Such semiconductor materials can be located in areas of the semiconductor system not normally occupied by functional (e.g., electrically operable) semiconductor components, and in some embodiments may be electrically inoperable (e.g., devoid of functional circuitry). In embodiments in which functional semiconductor components are directly bonded (e.g., by fusion bonding or hybrid bonding techniques), the semiconductor materials can also be directly bonded to at least one of the semiconductor components.

Description

[Technical Field]

[0001] Cross Reference This patent application claims priority to U.S. Patent Application No. 18 / 522,457, filed November 29, 2023, by Griffin et al., entitled "TECHNIQUES FOR THERMAL DISTRIBUTION IN COUPLED SEMICONDUCTOR SYSTEMS," and U.S. Provisional Patent Application No. 63 / 429,422, filed December 1, 2022, by Griffin et al., entitled "TECHNIQUES FOR THERMAL DISTRIBUTION IN COUPLED SEMICONDUCTOR SYSTEMS," each of which is assigned to the assignee of the present application and each of which is expressly incorporated herein by reference in its entirety.

[0002] The following relates to one or more systems for memory, including techniques for heat distribution in coupled semiconductor systems. [Background technology]

[0003] Memory devices are widely used to store information in devices such as computers, user devices, wireless communication devices, cameras, digital displays, and the like. Information is stored by programming memory cells within the memory device to various states. For example, a binary memory cell can be programmed to one of two supported states, often represented by a logic 1 or a logic 0. In some instances, a single memory cell can support more than two states, any one of which can be stored. To access the stored information, a memory device can read (e.g., sense, detect, retrieve, determine) the state from the memory cell. To store information, a memory device can write (e.g., program, set, assign) the state to the memory cell.

[0004] There are many different types of memory devices, including magnetic hard disks, random access memory (RAM), read-only memory (ROM), dynamic RAM (DRAM), synchronous dynamic RAM (SDRAM), static RAM (SRAM), ferroelectric RAM (FeRAM), magnetic RAM (MRAM), resistive RAM (RRAM), flash memory, phase-change memory (PCM), self-selection memory, chalcogenide memory technology, and NOT-OR (NOR) and NOT-AND (NAND) memory devices. Memory cells are sometimes described as having either a volatile or nonvolatile configuration. Memory cells configured in a nonvolatile configuration can retain their stored logic state for long periods of time, even in the absence of external power. Memory cells configured in a volatile configuration may lose their stored state when disconnected from external power. Some memory devices may be implemented as part of a stack of semiconductor dies, and the heat transfer associated with the operation of the stack of semiconductor dies may be affected by the thermal conductivity of the semiconductor dies themselves, or of intervening materials such as bonding materials or thermal interface materials, or other materials or interfaces between the stack of semiconductor dies and the environment surrounding the stack of semiconductor dies. [Brief explanation of the drawings]

[0005] [Figure 1] FIG. 1 illustrates an example system supporting techniques for heat distribution in a coupled semiconductor system according to an embodiment disclosed herein. [Figure 2] FIG. 1 illustrates an example semiconductor system supporting techniques for heat distribution in a coupled semiconductor system according to an embodiment disclosed herein. [Figure 3] FIG. 1 illustrates an example of a bonding diagram supporting techniques for thermal distribution in a bonded semiconductor system, according to embodiments disclosed herein. [Figure 4A] 1 illustrates an example layout of semiconductor components supporting techniques for heat distribution in coupled semiconductor systems according to embodiments disclosed herein. [Figure 4B] 1 illustrates an example layout of semiconductor components supporting techniques for heat distribution in coupled semiconductor systems according to embodiments disclosed herein. [Figure 5] 1 is a flowchart illustrating a method for supporting techniques for heat distribution in a coupled semiconductor system, according to embodiments disclosed herein. [Figure 6] 1 is a flowchart illustrating a method for supporting techniques for heat distribution in a coupled semiconductor system, according to embodiments disclosed herein. DETAILED DESCRIPTION OF THE INVENTION

[0006] A semiconductor system is formed by bonding various semiconductor components (e.g., subcomponents, subsystems) together, such as by bonding one semiconductor die to another (e.g., via chip-to-chip (C2C) bonding), bonding a stack of semiconductor dies to another semiconductor die, or bonding each set of one or more semiconductor dies to a semiconductor wafer (e.g., via chip-to-wafer (C2W) bonding), among other examples. Operations performed by a semiconductor system may generate heat, which is distributed throughout the semiconductor system along various thermal paths in the semiconductor system. In some embodiments, the arrangement of materials in a semiconductor system may be associated with a thermal conductivity mismatch, in which some regions of the semiconductor system have relatively lower thermal conductivity than other regions. For example, a semiconductor system may include bonding materials or other interface materials between or around semiconductor components, or one or more regions lacking material (e.g., voids, air interfaces), that have a different thermal conductivity than the semiconductor components themselves or the joints between the semiconductor components (e.g., related to differences in bonding techniques or bonding materials). Additionally or alternatively, one semiconductor component of a semiconductor system may have a different footprint (e.g., cross-sectional area when viewed along the stacking direction) than another semiconductor component, which may also be associated with differences in thermal conductivity from region to region of the semiconductor system. In certain examples, mismatches in thermal conductivity in different regions of a semiconductor system (e.g., along the stacking direction, along the thickness direction) may result in uneven temperature distribution in the semiconductor system (e.g., hot spots that may be related to differences in generated heat rejection), which may affect the operations performed by the semiconductor system.

[0007] According to embodiments described herein, semiconductor materials (e.g., thermal semiconductor portions, separately formed semiconductor portions) can be implemented such that a semiconductor system supports a thermal path having a thermal conductivity relatively close to the thermal conductivity through coupled semiconductor components of the semiconductor system. Such semiconductor materials can be located in regions of the semiconductor system not normally occupied by functional semiconductor components and, in some embodiments, may be electrically inoperable (e.g., devoid of functional circuitry). For example, if a first semiconductor component has a larger footprint than a second semiconductor component, the thermal conductivity in a first region of the semiconductor system (e.g., through the first and second semiconductor components) can be approximated by coupling a semiconductor material to the first semiconductor component in a second region not occupied by the second semiconductor component (e.g., associated with the thermal conductivity through the first semiconductor component and the semiconductor material). In some embodiments, such as when a first semiconductor component and a second semiconductor component are directly bonded (e.g., by fusion bonding or hybrid bonding without a bonding material), a semiconductor material can be directly bonded (e.g., by fusion bonding) to the first semiconductor component to improve the similarity of thermal conductivity in different regions (e.g., along the stacking direction). By supporting more uniform thermal conductivity in different regions of a semiconductor system, such semiconductor material portions can be implemented to reduce hot spots in the semiconductor system and support more uniform operating characteristics in different regions of the semiconductor system.

[0008] Features of the present disclosure will first be illustrated and described in the context of a system with reference to Figure 1. Features of the present disclosure will then be illustrated and described in the context of a semiconductor system, bonding diagram, layout, and flow chart with reference to Figures 2 through 6.

[0009] 1 illustrates an example system 100 supporting techniques for a coupled host die and memory die according to embodiments disclosed herein. System 100 may comprise part of an electronic device, such as a computing device, a mobile computing device, a wireless communication device, a graphics processing device, a vehicle, or other system. System 100 includes a host system 105, a memory system 110, and one or more channels 115 that couple host system 105 to memory system 110 (e.g., to provide a communicative coupling). System 100 may include one or more memory systems 110, although aspects of one or more memory systems 110 may be described in the context of a single memory system 110.

[0010] Host system 105 may be an example of a processor (e.g., circuit, processing circuit, processing component) that uses memory to execute processes, such as a computing device, a mobile computing device, a wireless communication device, a graphics processing device, a wearable device, an Internet-connected device, a vehicle controller, a processing system of a system-on-chip (SoC) or other fixed or portable electronic device, among other examples. Host system 105 may include one or more of an external memory controller 120, a processor 125, a basic input / output system (BIOS) component 130, or other components (e.g., peripheral components, input / output controllers not shown). The components of host system 105 may be coupled to each other using a bus 135.

[0011] External memory controller 120 can be configured to enable communication of information (e.g., data, commands, control information, configuration information) between components of system 100 (e.g., between processor 125 and components of host system 105, such as memory system 110). External memory controller 120 can process (e.g., translate) communications exchanged between host system 105 and memory system 110. In some embodiments, external memory controller 120, or other components of system 100, or associated functionality described herein, can be implemented by or part of processor 125. For example, external memory controller 120 can be hardware, firmware, or software (e.g., instructions), or a combination thereof, implemented by processor 125 or other components of a memory system of system 100 or host system 105. Although external memory controller 120 is shown external to memory system 110, in some embodiments, external memory controller 120 or its functionality described herein may be implemented by one or more components of memory system 110 (e.g., memory system controller 155, local memory controller 165), or vice versa. In various embodiments, host system 105 or external memory controller 120 may be referred to as a host.

[0012] Processor 125 may operate to provide functionality (e.g., control functions) to system 100 or host system 105. Processor 125 may be a general-purpose processor, a digital signal processor (DSP), an application-specific integrated circuit (ASIC), a field-programmable gate array (FPGA) or other programmable logic device, discrete gate or transistor logic, discrete hardware components, or a combination thereof. In some embodiments, processor 125 may be, among other examples, a central processing unit (CPU), a graphics processing unit (GPU), a general-purpose GPU (GPGPU), or a system-on-chip (SoC).

[0013] In some embodiments, system 100 or host system 105 may include input components, output components, or a combination thereof. Input components may include, among other examples, a sensor, a microphone, a keyboard, another processor (e.g., on a printed circuit board), an interface (e.g., a user interface, an interface between other devices), or a peripheral device that interfaces with system 100 through one or more peripheral components. Output components may include, among other examples, a display, an audio speaker, a printing device, another processor on an integrated circuit, or a peripheral device that interfaces with system 100 through one or more peripheral components.

[0014] Memory system 110 may be a component of system 100 operable to provide physical storage locations (e.g., addresses) that can be used or referenced by system 100. Memory system 110 may include a memory system controller 155 and one or more memory dies 160 (e.g., memory chips) that support capacity for data storage. Memory system 110 may be configurable to operate with one or more different types of host systems 105 and may respond to and execute commands provided by host system 105 (e.g., via external memory controller 120). For example, memory system 110 (e.g., memory system controller 155) may receive, among other types of commands and operations, a write command indicating that memory system 110 should store data received from host system 105, a read command indicating that memory system 110 should provide data stored in memory die 160 to host system 105, or a refresh command indicating that memory system 110 should refresh data stored in memory die 160.

[0015] Memory system controller 155 may include components (e.g., circuitry, logic) operable to control the operation of memory system 110. Memory system controller 155 may include hardware, firmware, or instructions that enable memory system 110 to perform various operations and may be operable to receive, send, or execute commands, data, or control information related to the operation of memory system 110. Memory system controller 155 may be operable to communicate with one or more of external memory controller 120, one or more memory dies 160, or processor 125. In one embodiment, memory system controller 155 may coordinate with a local memory controller 165 of a memory die 160 to control the operation of memory system 110.

[0016] Each memory die 160 can include a local memory controller 165 and a memory array 170. The memory array 170 can be a collection of memory cells, each operable to store one or more bits of data. The memory die 160 can include a two-dimensional (2D) array of memory cells or a three-dimensional (3D) array of memory cells. In some embodiments, the 2D memory die 160 can include a single memory array 170. In some embodiments, the 3D memory die 160 can include two or more memory arrays 170, which can be stacked or positioned next to each other (relative to the substrate).

[0017] Local memory controller 165 may include components (e.g., circuitry, logic) operable to control operation of memory die 160. In some embodiments, local memory controller 165 may be operable to communicate (e.g., receive or send data and / or commands) with memory system controller 155. In some embodiments, memory system 110 may not include memory system controller 155, and local memory controller 165 or external memory controller 120 may perform various functions described herein. Thus, local memory controller 165 may be operable to communicate with memory system controller 155, or with other local memory controllers 165, or directly with external memory controller 120, processor 125, or any combination thereof. Examples of components that may be included in the memory system controller 155 and / or the local memory controller 165 may include a receiver for receiving signals (e.g., from the external memory controller 120), a transmitter for transmitting signals (e.g., to the external memory controller 120), a decoder for decoding or demodulating received signals, an encoder for encoding or modulating transmitted signals, a sense component for sensing the state of memory cells in the memory array 170, a write component for writing the state to memory cells in the memory array 170, or various other components operable to support the described operations of the memory system 110.

[0018] Host system 105 (e.g., external memory controller 120) and memory system 110 (e.g., memory system controller 155) can communicate information (e.g., data, commands, control information, configuration information) using one or more channels 115. Each channel 115 can be an example of a transmission medium that carries information, and each channel 115 can include one or more signal paths (e.g., transmission media, electrical conductors, conductive paths) between terminals associated with components of system 100. For example, channel 115 can be associated with a first terminal (e.g., including one or more pins, including one or more pads) at host system 105 and a second terminal at memory system 110. A terminal can be an example of a conductive input or output point of a device of system 100, and the terminal can be operable to function as part of channel 115.

[0019] In some embodiments, channels 115 (e.g., associated with signal paths and terminals) may be dedicated to conveying one or more types of information. For example, channels 115 may include, among other channels, one or more command and address channels, one or more clock signal channels, one or more data channels, or a combination thereof. In some embodiments, signals may be conveyed over channels 115 using single data rate (SDR) signaling or double data rate (DDR) signaling. SDR signaling may register one modulation symbol (e.g., signal level) of a signal per clock cycle (e.g., on the rising or falling edge of the clock signal). DDR signaling may register two modulation symbols of a signal per clock cycle (e.g., on both the rising and falling edges of the clock signal). In some embodiments, at least a subset of channels 115 may be configured according to a protocol (e.g., a logic protocol, a communications protocol, an operational protocol) that may support operations and interactions between host system 105 and memory system 110. For example, the host system 105, the memory system 110, at least a subset of the channels 115, or a combination thereof, may be configured according to a protocol that conforms to the High Bandwidth Memory (HBM) protocol or other memory standards.

[0020] In certain embodiments, aspects of system 100 can be implemented with respective semiconductor components (e.g., dies, die stacks, wafers) that can be coupled to one another to form a semiconductor system (e.g., a combined semiconductor system). The semiconductor system can implement semiconductor material (e.g., thermal semiconductor portions, electrically inoperable semiconductor material) in regions of the semiconductor system not normally occupied by functional semiconductor components that can support a thermal path having a thermal conductivity relatively close to the thermal conductivity through the combined functional semiconductor components. By supporting a more uniform thermal conductivity in different regions of the semiconductor system, such semiconductor material portions can be implemented to reduce hot spots in the semiconductor system and support more uniform operating characteristics in different regions of the semiconductor system.

[0021] FIG. 2 illustrates an example semiconductor system 200 (e.g., a semiconductor assembly) supporting techniques for heat distribution in a bonded semiconductor system according to embodiments disclosed herein. Aspects of semiconductor system 200 may be described with reference to x, y, and z directions in the figure's coordinate system, where the z direction may refer to a direction perpendicular or otherwise more relative (e.g., vertical, thickness, stack) to a surface in an xy plane (e.g., substrate plane, bonding plane) of semiconductor system 200. While FIG. 2 illustrates example relative dimensions and quantities of various features, aspects of semiconductor system 200 may be implemented using other relative dimensions or quantities of such features according to embodiments disclosed herein.

[0022] Semiconductor system 200 includes semiconductor component 205 (e.g., semiconductor components 205-a and 205-b), semiconductor component 210, and semiconductor component 215 (e.g., semiconductor components 215-a and 215-b). While FIG. 2 shows an example of semiconductor system 200 including two semiconductor components 205 and two semiconductor components 215, semiconductor system 200 according to the described technology can include any quantity of one or more semiconductor components 205 and any quantity of one or more semiconductor components 215. Each of semiconductor components 205 and each of semiconductor components 215 can be coupled (e.g., physically coupled, bonded) to semiconductor component 210. In one embodiment, semiconductor component 210 can be a semiconductor wafer or a portion thereof (e.g., a semiconductor die cut from a semiconductor wafer), and each semiconductor component 205 can be a single semiconductor die or a stack of multiple semiconductor dies. Semiconductor component 210 and semiconductor component 205 may each include electrically operable circuitry (e.g., functional circuitry) that may be supported by at least a respective communicative coupling (e.g., electrical coupling) between semiconductor component 210 and each semiconductor component 205, and in some embodiments, a communicative coupling with a component (e.g., an interface component, a user interface) external to semiconductor system 200.

[0023] In one embodiment, semiconductor system 200 may include at least some features of memory system 110. For example, each semiconductor component 205 may include a respective set of one or more memory arrays (e.g., one or more memory arrays 170 of one or more respective semiconductor dies), and semiconductor component 205 or semiconductor component 210, or a combination thereof, may include at least some of the circuitry for accessing the respective set of memory arrays (e.g., aspects of local memory controller 165, aspects of memory system controller 155). In one embodiment, semiconductor component 210 may include at least some control circuitry for accessing the respective memory arrays of at least one semiconductor component 205. In one embodiment, semiconductor component 210 may also include at least some features of a host (e.g., host system 105), including aspects of a host processor (e.g., processor 125) or external memory controller 120, or a combination thereof.

[0024] Operations performed by semiconductor system 200 (e.g., operation of semiconductor component 210, operation of semiconductor component 205) may generate heat, which may be distributed throughout semiconductor system 200 along various thermal paths. However, in certain embodiments, semiconductor component 210 may be associated with a footprint (e.g., a larger cross-section as viewed along the z-direction, larger dimensions along one or more directions in the xy-plane, such as a "pouch" area) that is larger than semiconductor component 205 or the pattern of semiconductor components 205 coupled to semiconductor component 210. For example, as shown, semiconductor component 210 may be associated with dimension 211 along the y-direction that is larger than dimension 206 along the y-direction associated with semiconductor component 205.

[0025] To improve the uniformity (e.g., along the xy plane) of thermal conductivity through the semiconductor system (e.g., along the z direction) and reduce the likelihood of hot spots (e.g., at locations of the semiconductor component 210 not coupled to the semiconductor component 205), the semiconductor system 200 may include a semiconductor component 215 (e.g., a thermal path component, a thermal semiconductor component) that can be coupled to the semiconductor component 210 in areas not coupled to the semiconductor component 205. The semiconductor component 215 may include (e.g., consist of) a material that exhibits a thermal conductivity equal to or similar to that of the semiconductor component 205 (e.g., at least along the z direction), such as a silicon material or another semiconductor material. In an example embodiment, the semiconductor component 215 may be implemented with a height (e.g., along the z direction, thickness, one or more extents) that is similar (e.g., the same) as that of one or more semiconductor components 205, or with a height that is different (e.g., shorter, taller) from that of one or more semiconductor components 205 (e.g., to compensate for differences in thermal conductivity between the material of the semiconductor component 215 and the material of the semiconductor component 205).

[0026] Because semiconductor component 215 is implemented to provide a thermal path (e.g., rather than electrical circuit functionality), semiconductor component 215 may not include electrically operable circuitry. Thus, semiconductor component 215 may be implemented with a lower grade of semiconductor material than semiconductor component 210 or semiconductor component 205. For example, semiconductor component 210 and / or semiconductor component 205 may be implemented with at least some crystalline semiconductor (e.g., from a crystalline silicon wafer) to support relatively high performance circuitry (e.g., transistors formed at least in part from doped portions of a crystalline semiconductor substrate), while semiconductor component 215 may be formed from polycrystalline semiconductor (e.g., from a block or other physically contiguous or monolithic piece of polycrystalline silicon or other semiconductor). In certain embodiments, the selection of a material for semiconductor component 215 similar to the material for semiconductor component 205, among other examples, can support other aspects of relative uniformity between portions of the semiconductor system, such as uniformity in bonding properties, uniformity in thermal expansion properties (e.g., a relatively uniform coefficient of thermal expansion (CTE)), or uniformity in strength or stiffness properties, or a combination thereof, among other examples.

[0027] In some embodiments, semiconductor component 205 can be directly bonded to semiconductor component 210 (e.g., without a separate bonding material). For example, to support a communicative coupling, the bond between semiconductor component 205 and semiconductor component 210 can include a fusion bond between respective conductive portions (e.g., conductive portions, conductive contacts) of semiconductor component 205 and semiconductor component 210. In some embodiments (e.g., by hybrid bonding), the bond between semiconductor component 205 and semiconductor component 210 can also include a fusion bond between respective dielectric portions (e.g., oxide portions, nitride portions, carbide portions, oxynitride portions, carbonitride portions, or other semiconductor conversion or deposition portions) of semiconductor component 205 and semiconductor component 210.

[0028] In such an embodiment, semiconductor component 215 may also be bonded directly (without a separate bonding material) to semiconductor component 210 to support a relatively uniform thermal conductivity throughout semiconductor system 200. In some embodiments, the direct bond between semiconductor component 215 and semiconductor component 210 may include a fusion bond between respective dielectric portions (e.g., oxide portions, nitride portions, carbide portions, oxynitride portions, carbonitride portions, or other semiconductor conversion or deposition portions) of semiconductor component 215 and semiconductor component 210. In some embodiments, the bond between semiconductor component 215 and semiconductor component 210 may include a fusion bond between respective conductive portions (e.g., electrically conductive portions) or other types of material portions on the surfaces of semiconductor component 215 and semiconductor component 210, although such a bond may be configured as a non-communicative bond (e.g., a non-communicative and thermally conductive bond). Thus, according to these and other embodiments, the thermal conductivity through semiconductor component 210 and semiconductor component 215 can be similar to the thermal conductivity through semiconductor component 210 and semiconductor component 205, which can support a more balanced temperature distribution along the xy plane (e.g., so as to reduce the likelihood of hot spots at least in semiconductor component 210), which can support more uniform operating characteristics in different regions of semiconductor system 200.

[0029] In some cases, semiconductor system 200 may also include material 220, which may be a mold compound, a thermal interface material (TIM), or an organic compound, located around, between, or on semiconductor component 205 and semiconductor component 215. Material 220 may be deposited on semiconductor system 200 after semiconductor component 205 and semiconductor component 215 are bonded to semiconductor component 210. For example, material 220 may be formed within a recess between semiconductor component 205 and semiconductor component 215 and around semiconductor component 205 and semiconductor component 215 (e.g., without being disposed between semiconductor component 210 and semiconductor component 205 and semiconductor component 215). In some embodiments, the top surface, bottom surface, or both (e.g., along the Z direction) of semiconductor system 200 may be configured for bonding to a heat sink, which may include bonding via a TIM (e.g., thermal paste), which may involve planarization or other preparation operations along the interfaces of semiconductor component 205 and semiconductor component 215.

[0030] FIG. 3 illustrates an example bonding diagram 300 supporting techniques for heat distribution in a bonded semiconductor system according to embodiments disclosed herein. Aspects of the bonding diagram 300 may be described with reference to x, y, and z directions in an illustrated coordinate system, which may be the same as or similar to the directions in the coordinate system described with reference to FIG. 2. The bonding diagram 300 may illustrate a cross-sectional view of a bond in a semiconductor system (e.g., including semiconductor component 205-c, semiconductor component 210-a, and semiconductor component 215-c) that may include features described with reference to semiconductor system 200 of FIG. 2. In some embodiments, the thickness (e.g., along the z direction) of semiconductor component 215-c may be similar (e.g., the same within manufacturing tolerances) to the thickness of semiconductor component 205-c.

[0031] Although FIG. 3 illustrates examples of relative dimensions and quantities of various features, aspects of bonding diagram 300 may be implemented with other relative dimensions or quantities of such features according to embodiments disclosed herein.

[0032] In this example of bonding diagram 300, semiconductor component 205-c includes multiple semiconductor dies 305 (e.g., semiconductor dies 305-a and 305-b, memory dies), although a semiconductor system formed according to bonding diagram 300 can include any quantity of one or more semiconductor dies 305 in semiconductor component 205. Each semiconductor die 305 can include a respective set of one or more memory arrays 325 (e.g., memory arrays 325-a-1 and 325-a-2 of semiconductor die 305-a, memory arrays 325-b-1 and 325-b-2 of semiconductor die 305-b), which can be examples of memory array 170. Semiconductor component 210-a can include circuitry 330, which can include at least a portion of circuitry (e.g., control circuitry) configured to access memory arrays 325. For example, circuitry 330 can include at least a portion of local memory controller 165, or memory system controller 155, or a combination thereof. In some embodiments, semiconductor die 305 may also include at least a portion (e.g., a different portion than that included in circuitry 330) of circuitry configured to access each memory array 325, or such circuitry may be considered to be included within the illustrated boundaries of memory array 325. In some embodiments, circuitry 330 may also include features of at least a portion of a host (e.g., of host system 105), including aspects of a host processor (e.g., processor 125), or external memory controller 120, or a combination thereof.

[0033] The bonding diagram 300 illustrates aspects of semiconductor component 205-c and semiconductor component 215-c coupled to semiconductor component 210-a. For example, surface 306 of semiconductor component 205-c can be coupled to a portion of surface 307 of semiconductor component 210-a (e.g., portion 310-a along the y-direction). The coupling of semiconductor component 205-c to semiconductor component 210-a can form a communicative coupling (e.g., via portions of conductive material 320 at surfaces 306 and 307, which can exhibit any quantity of one or more conductive contacts, each associated with a respective signal path) between at least memory array 325 of semiconductor component 205-c and circuit 330 of semiconductor component 210-a, such that circuit 330 can be operable to access one or more memory arrays 325. In some embodiments, such a communicative coupling can be supported via conductive material 320 at the interfaces of semiconductor dies 305 coupled in a stack (e.g., to form semiconductor component 215-c as a stack of semiconductor dies). Additionally, surface 308 of semiconductor component 215-c can be coupled to a portion of surface 307 of semiconductor component 210-a (e.g., portion 310-b along the y-direction). However, the coupling of semiconductor component 215 with semiconductor component 210-a does not necessarily form a coupling that allows communication (e.g., because semiconductor component 215-c may not have functional circuitry).

[0034] In one embodiment, the bond between semiconductor component 215-c and semiconductor component 210-a can be established by fusion bonding, which can include fusing dielectric material 315-a at surface 308 to dielectric material 315-b at surface 307. Dielectric material 315-a and dielectric material 315-b can be a semiconductor oxide material (e.g., an oxide of silicon), a semiconductor nitride material (e.g., a nitride of silicon), a semiconductor carbide material (e.g., a carbide of silicon), a semiconductor carbonitride material, or any combination thereof (e.g., an oxynitride of silicon, a carbonitride of silicon). Dielectric material 315-a and dielectric material 315-b can be the same material or different materials.

[0035] In one embodiment, the bond between semiconductor component 205-c and semiconductor component 210-a can be provided by hybrid bonding, which can include fusing conductive material 320-a at surface 306 to conductive material 320-b at surface 307. Conductive material 320-a and conductive material 320-b can be the same or different materials and can each be associated with one or more contacts that support a communicative coupling between memory array 325 and circuitry 330. In one embodiment, hybrid bonding can also include fusing dielectric material 315-c at surface 306 to dielectric material 315-d at surface 307. Dielectric material 315-c and dielectric material 315-d can be a semiconductor oxide material (e.g., an oxide of silicon), a semiconductor nitride material (e.g., a nitride of silicon), a semiconductor carbide material (e.g., a carbide of silicon), or any combination thereof (e.g., an oxynitride of silicon, a carbonitride of silicon). Dielectric material 315-c and dielectric material 315-d may be the same material or different materials. In some embodiments, dielectric material 315-d is continuous (e.g., made of the same material) with dielectric material 315-b (e.g., from portion 310-a to portion 310-b).

[0036] In some embodiments, one or more of the dielectric materials 315 may be formed on the respective surfaces of the semiconductor components (e.g., semiconductor component 205-c, semiconductor component 210-a, semiconductor component 215-c) by oxidizing, nitriding, or otherwise converting a material (e.g., a semiconductor material) at the respective surfaces. For example, dielectric material 315-a may be formed by oxidizing, nitriding, or carbonizing a semiconductor material (e.g., a polycrystalline semiconductor) of semiconductor component 215-c, or dielectric material 315-b may be formed by oxidizing or nitriding a semiconductor material (e.g., a crystalline semiconductor) of semiconductor component 210-a, etc. Additionally or alternatively, one or more of the dielectric materials 315 may be formed on the respective surfaces of the semiconductor components by depositing the respective dielectric material 315 on the surface of the semiconductor component. For example, a semiconductor oxide, nitride, carbide, oxynitride, carbonitride, or other material may be deposited on at least surface 308 of semiconductor component 215 to form dielectric material 315-a, etc. Although shown along certain surfaces of each semiconductor component (e.g., dielectric material 315-a is on surface 308 of semiconductor component 215-c), dielectric material 315 may be formed on multiple surfaces of the body of each semiconductor component (e.g., may surround the body).

[0037] 4A and 4B illustrate example semiconductor component layouts 400-a and 400-b supporting techniques for heat distribution in a bonded semiconductor system according to embodiments described herein. Semiconductor component layouts 400-a and 400-b may illustrate embodiments for implementing semiconductor system 200 or bonding diagram 300. For illustrative purposes, embodiments of semiconductor component layouts 400-a and 400-b may be described with reference to x-, y-, and z-directions in an illustrated coordinate system, which may be the same as or similar to the coordinate system directions described with reference to FIG. 2 and / or FIG. 3. For example, each semiconductor component layout 400-a and 400-b may be illustrated with a top view and a cross-sectional view of a respective semiconductor component structure. While semiconductor component layouts 400-a and 400-b may illustrate example relative dimensions and quantities of various features, embodiments of semiconductor component layouts 400-a and 400-b may also be implemented with other relative dimensions or quantities of such features according to embodiments disclosed herein.

[0038] The semiconductor component layout 400-a may illustrate bonding (e.g., deposition) of multiple semiconductor components 205-d to the semiconductor component 210-b, which may occur after the semiconductor component 215-d is bonded to the semiconductor component 210-b. For example, the semiconductor component 215-d may be formed with a pattern of openings 405 (e.g., extending through the semiconductor component 215-d along the z-direction) and deposited (e.g., bonded) on the semiconductor component 210-b. In some embodiments, the semiconductor component 215-d may have a common extent (e.g., in the x-y plane) with the semiconductor component 210-b. The openings 405 may provide locations for depositing the semiconductor component 205-d through the semiconductor component 210-b to bond the semiconductor component 205-d to the semiconductor component 210-b.

[0039] The semiconductor component layout 400-b may illustrate the bonding of one or more semiconductor components 215-e to the semiconductor component 210-c, which may occur after the multiple semiconductor components 215-e are bonded to the semiconductor component 210-c. For example, at least a portion of the semiconductor component 215-e may be deposited between each of the semiconductor components 205-e. In various embodiments, such techniques may be implemented using a single (e.g., contiguous) semiconductor component 215-e or a set of multiple semiconductor components 215-e (e.g., multiple sections of a thermal semiconductor).

[0040] In some embodiments, semiconductor component layout 400-a or semiconductor component layout 400-b may be subdivided into multiple semiconductor systems (e.g., multiple semiconductor assemblies after respective bonding operations). For example, one or more semiconductor assemblies, each including semiconductor component 205, a portion of semiconductor component 210, and a portion of semiconductor component 215, may be formed based at least in part on a separation (e.g., a cut) through semiconductor component 210 and at least one semiconductor component 215 (e.g., separating semiconductor component 210 and one or more semiconductor components 215 into separate portions).

[0041] 5 illustrates a flowchart illustrating a method 500 supporting techniques for heat distribution in a coupled semiconductor system according to embodiments disclosed herein. The operations of method 500 may be performed by a manufacturing system or one or more controllers associated with the manufacturing system. In some embodiments, the one or more controllers may execute a set of instructions to control one or more functional elements of the manufacturing system to perform the described functions. Additionally or alternatively, the one or more controllers may perform aspects of the described functions using dedicated hardware.

[0042] At 505, the method includes coupling a surface of a first semiconductor component to a first portion of a surface of a second semiconductor component, the first semiconductor component including one or more memory arrays, the second semiconductor component including control circuitry for accessing the one or more memory arrays, and wherein coupling the surface of the first semiconductor component to the first portion of the surface of the second semiconductor component forms a communicative coupling between the one or more memory arrays and the control circuitry.

[0043] At 510, the method includes bonding a surface of the third semiconductor component to a second portion of a surface of the second semiconductor component without forming a communicative bond between the third semiconductor component and the second semiconductor component based at least in part on fusing a first material on the surface of the third semiconductor component to a second material on the second portion of the surface of the second semiconductor component.

[0044] In some examples, an apparatus (e.g., a manufacturing system) as described herein may perform one or more methods, such as method 500. The apparatus may include mechanism (e.g., circuitry, logic, one or more controllers, or other functional elements), or instructions (e.g., a non-transitory computer-readable medium storing instructions executable by one or more controllers to control one or more functional elements of the manufacturing system), or any other means, or combinations thereof, for performing the following aspects of the present disclosure:

[0045] Aspect 1: A method or apparatus including: operations, mechanisms, instructions, or any other means, or combinations thereof, for coupling a surface of a first semiconductor component to a first portion of a surface of a second semiconductor component, the first semiconductor component including one or more memory arrays and the second semiconductor component including control circuitry for accessing the one or more memory arrays, wherein coupling the surface of the first semiconductor component to the first portion of the surface of the second semiconductor component forms a communicative bond between the one or more memory arrays and the control circuitry; and coupling the surface of the third semiconductor component to the second portion of the surface of the second semiconductor component without forming a communicative bond between the third semiconductor component and the second semiconductor component, based at least in part on fusing a first material at the surface of the third semiconductor component to a second material at the second portion of the surface of the second semiconductor component.

[0046] Embodiment 2: The method or apparatus of embodiment 1, wherein coupling the surface of the first semiconductor component to the first portion of the surface of the second semiconductor component includes an operation, mechanism, instruction, or any other means, or a combination thereof, for fusing one or more portions of a first conductive material on the surface of the first semiconductor component to one or more portions of a second conductive material on the first portion of the surface of the second semiconductor component.

[0047] Embodiment 3: The method or apparatus of embodiment 2, wherein coupling the surface of the first semiconductor component to the first portion of the surface of the second semiconductor component includes an operation, mechanism, instruction, or any other means, or a combination thereof, for fusing one or more portions of the first dielectric material on the surface of the first semiconductor component to one or more portions of the second dielectric material on the first portion of the surface of the second semiconductor component.

[0048] Embodiment 4: The method or apparatus of embodiment 3, wherein at least a portion of the second material and at least a portion of the second dielectric material are continuous at a surface of the second semiconductor component.

[0049] Embodiment 5: The method or apparatus of any of embodiments 1 to 4, further including an operation, mechanism, instruction, or any other means, or combination thereof, for forming the first material on a surface of the third semiconductor component based at least in part on oxidizing, nitriding, carbonizing, or a combination thereof, a semiconductor portion of the third semiconductor component.

[0050] Embodiment 6: The method or apparatus of any of embodiments 1 to 5, further including an operation, mechanism, instruction, or any other means, or combination thereof, for forming the first material on a surface of the third semiconductor component based at least in part on depositing a semiconductor oxide material, a semiconductor nitride material, a semiconductor carbide material, or combinations thereof on the surface of the third semiconductor component.

[0051] Embodiment 7: The method or apparatus of any of embodiments 1 to 6, further including an operation, mechanism, instruction, or other means, or a combination thereof, for forming a molding compound adjacent to the first semiconductor component, adjacent to the third semiconductor component, or between the first semiconductor component and the third semiconductor component, or a combination thereof.

[0052] Embodiment 8: The method or apparatus of any of embodiments 1 to 7, further including an operation, mechanism, instruction, or other means, or a combination thereof, for: after bonding the third semiconductor component to the second portion of the surface of the second semiconductor component, depositing a first semiconductor component in the opening through the third semiconductor component, and bonding the surface of the first semiconductor component to the first portion of the surface of the second semiconductor component while the first semiconductor component is in the opening.

[0053] Embodiment 9: The method or apparatus of any of embodiments 1 to 8, wherein coupling the surface of the third semiconductor component to the second portion of the surface of the second semiconductor component includes an operation, mechanism, instruction, or other means, or a combination thereof, for depositing the third semiconductor component between the set of the plurality of first semiconductor components after coupling the set of the plurality of first semiconductor components to the second semiconductor component.

[0054] Embodiment 10: The method or apparatus of any of embodiments 1 to 9, wherein the first semiconductor component includes: a first semiconductor die including a first subset of the one or more memory arrays; and a second semiconductor die coupled to the first semiconductor die including a second subset of the one or more memory arrays.

[0055] Embodiment 11: The method or apparatus of any of embodiments 1 to 10, further including operations, mechanisms, instructions, or other means, or a combination thereof, for forming a semiconductor assembly including the first semiconductor component, a portion of the second semiconductor component, and a portion of the third semiconductor component based at least in part on a separation through the second semiconductor component and the third semiconductor component.

[0056] Example 12: The method or apparatus of any of Examples 1 to 11, wherein the second semiconductor component comprises a semiconductor wafer configured for bonding with the plurality of first semiconductor components.

[0057] Embodiment 13: The method or apparatus of any of embodiments 1 to 12, wherein the third semiconductor component is formed without circuitry.

[0058] Embodiment 14: The method or apparatus of any of embodiments 1 to 13, wherein the first material is formed over a polycrystalline silicon portion of the third semiconductor component.

[0059] 6 illustrates a flowchart illustrating a method 600 for supporting techniques for heat distribution in a coupled semiconductor system according to embodiments disclosed herein. The operations of method 600 may be performed by a manufacturing system or one or more controllers associated with the manufacturing system. In some embodiments, the one or more controllers may execute a set of instructions for controlling one or more functional elements of the manufacturing system to perform the described functions. Additionally or alternatively, the one or more controllers may perform aspects of the described functions using dedicated hardware.

[0060] At 605, the method may include coupling a surface of a first semiconductor component to a first portion of a surface of a second semiconductor component, where the first semiconductor component includes one or more memory arrays and the second semiconductor component includes control circuitry for accessing the one or more memory arrays, and where coupling the surface of the first semiconductor component to the first portion of the surface of the second semiconductor component forms a communicative coupling between the one or more memory arrays and the control circuitry.

[0061] At 610, the method may include bonding a surface of the third semiconductor component to a second portion of a surface of the second semiconductor component without forming a communicative bond between the third semiconductor component and the second semiconductor component based at least in part on fusing a first dielectric material on a surface of the third semiconductor component to a second dielectric material on a second portion of a surface of the second semiconductor component.

[0062] In an example, an apparatus (e.g., a manufacturing system) as described herein can perform one or more methods, such as method 600. The apparatus can include mechanism (e.g., circuitry, logic, one or more controllers, or other functional elements), or instructions (e.g., a non-transitory computer-readable medium storing instructions executable by one or more controllers to control one or more functional elements of the manufacturing system), or any other means, or combinations thereof, for performing the following aspects of the present disclosure:

[0063] Aspect 15: A method or apparatus including operations, mechanisms, instructions, or any other means, or combinations thereof, for coupling a surface of a first semiconductor component to a first portion of a surface of a second semiconductor component, the first semiconductor component including one or more memory arrays and the second semiconductor component including control circuitry for accessing the one or more memory arrays, wherein coupling the surface of the first semiconductor component to the first portion of the surface of the second semiconductor component forms a communicative bond between the one or more memory arrays and the control circuitry; and coupling the surface of the third semiconductor component to the second portion of the surface of the second semiconductor component without forming a communicative bond between the third semiconductor component and the second semiconductor component, based at least in part on fusing a first dielectric material at the surface of the third semiconductor component to a second dielectric material at the second portion of the surface of the second semiconductor component.

[0064] Embodiment 16: The method or apparatus of embodiment 15, wherein the first dielectric material and the second dielectric material comprise an oxide of silicon, a nitride of silicon, a carbide of silicon, or a combination thereof.

[0065] It should be noted that the methods described herein describe possible implementations, that the acts and steps may be rearranged or otherwise modified, that other implementations are possible, and that portions of two or more of the methods may be combined.

[0066] DETAILED DESCRIPTION OF THE DEVICE The following provides an overview of aspects of the device described herein.

[0067] Aspect 17: An apparatus including: a first semiconductor component including one or more memory arrays; a second semiconductor component including control circuitry for accessing the one or more memory arrays, wherein a surface of the first semiconductor component and a first portion of the surface of the second semiconductor component are coupled by a communicative coupling between the one or more memory arrays and the control circuitry; and a third semiconductor component, wherein the surface of the third semiconductor component and a second portion of the surface of the second semiconductor component are coupled without a communicative coupling between the third semiconductor component and the second semiconductor component, and the coupling between the surface of the third semiconductor component and the second portion of the surface of the second semiconductor component is based at least in part on a fusion bond between a first material at the surface of the third semiconductor component and a second material at the second portion of the surface of the second semiconductor component.

[0068] Example 18: The device of example 17, wherein the first semiconductor component includes: a first semiconductor die including a first subset of the one or more memory arrays; and a second semiconductor die coupled between the first semiconductor die and the second semiconductor component, the second semiconductor die including a second subset of the one or more memory arrays.

[0069] Example 19: The device of example 17 to example 18, wherein the bonding of the first portion of the surface of the second semiconductor component to the surface of the first semiconductor component comprises a fusion bond between the first conductive material on the surface of the first semiconductor component and the second conductive material on the first portion of the surface of the second semiconductor component.

[0070] Embodiment 20: The device of embodiment 19, wherein the bonding of the first portion of the surface of the second semiconductor component to the surface of the first semiconductor component comprises a fusion bond between the first dielectric material on the surface of the first semiconductor component and the second dielectric material on the first portion of the surface of the second semiconductor component.

[0071] Embodiment 21: The device of embodiment 20, wherein at least a portion of the second material and at least a portion of the second dielectric material semiconductor component are continuous at a surface of the second semiconductor component.

[0072] Embodiment 22: The device of any of embodiments 17 to 21, further comprising a molding compound adjacent to the first semiconductor component, adjacent to the third semiconductor component, or between the first semiconductor component and the third semiconductor component, or a combination thereof.

[0073] Example 23: The device of any of Examples 17 to 22, wherein the third semiconductor component is formed without circuitry.

[0074] Embodiment 24: The device of any of embodiments 17 to 23, wherein the first material is formed on a polycrystalline silicon portion of the third semiconductor component.

[0075] DETAILED DESCRIPTION OF THE DEVICE The following provides an overview of aspects of the device described herein.

[0076] Aspect 25: A device formed by a process including: bonding a surface of a first semiconductor component to a first portion of a surface of a second semiconductor component, wherein the first semiconductor component includes one or more memory arrays and the second semiconductor component includes control circuitry for accessing the one or more memory arrays, and wherein bonding the surface of the first semiconductor component to the first portion of the surface of the second semiconductor component forms a communicative bond between the one or more memory arrays and the control circuitry; and bonding the surface of the third semiconductor component to a second portion of the surface of the second semiconductor component without forming a communicative bond between the third semiconductor component and the second semiconductor component, based at least in part on fusing a first material at the surface of the third semiconductor component and a second material at the second portion of the surface of the second semiconductor component.

[0077] Embodiment 26: The apparatus of embodiment 25, formed by a process that includes bonding a surface of the first semiconductor component to a first portion of a surface of the second semiconductor component based at least in part on fusing one or more portions of a first conductive material on the surface of the first semiconductor component to one or more portions of a second conductive material on the first portion of the surface of the second semiconductor component.

[0078] Embodiment 27: The apparatus of embodiment 26, formed by a process that includes bonding a surface of the first semiconductor component to a first portion of a surface of the second semiconductor component based at least on fusing one or more portions of a first dielectric material on the surface of the first semiconductor component to one or more portions of a second dielectric material on the first portion of the surface of the second semiconductor component.

[0079] Embodiment 28: The device of embodiment 27, wherein at least a portion of the second material and at least a portion of the second dielectric material are continuous at a surface of the second semiconductor component.

[0080] DETAILED DESCRIPTION OF THE DEVICE The following provides an overview of aspects of the device described herein.

[0081] Aspect 29: A device comprising: a first semiconductor component including one or more memory arrays; a second semiconductor component including control circuitry for accessing the one or more memory arrays, wherein a surface of the first semiconductor component and a first portion of the surface of the second semiconductor component are coupled by a communicative coupling between the one or more memory arrays and the control circuitry; and a third semiconductor component, wherein a surface of the third semiconductor component and a second portion of the surface of the second semiconductor component are coupled without a communicative coupling between the third semiconductor component and the second semiconductor component, and wherein the coupling of the surface of the third semiconductor component to the second portion of the surface of the second semiconductor component is based at least in part on a fusion bond between a first dielectric material at the surface of the third semiconductor component and a second dielectric material at the second portion of the surface of the second semiconductor component.

[0082] Embodiment 30: The device of embodiment 29, wherein the first dielectric material and the second dielectric material comprise an oxide of silicon, a nitride of silicon, a carbide of silicon, or a combination thereof.

[0083] The information and signals described herein may be represented using any of a variety of different technologies and techniques. For example, data, instructions, commands, information, signals, bits, symbols, and chips that may be referred to throughout the above description may be represented by voltages, currents, electromagnetic waves, magnetic fields or particles, optical fields or particles, or combinations thereof. Some drawings may show a signal as a single signal. However, a signal may represent a bus of signals, where the bus may have various bit widths.

[0084] The terms “electronic communication,” “conductive contact,” “connected,” and “coupled” may refer to a relationship between components that supports the flow of signals between them. Components are considered to be in electronic communication with one another (e.g., in conductive contact, connected, coupled) if there is any electrical path (e.g., a conductive path) between the components that can support the flow of signals (e.g., charge, current, voltage) between the components at any given time. At any given time, the conductive path between components that are in electronic communication with one another (e.g., in conductive contact, connected, coupled) may be an open circuit or a closed circuit based on the operation of the devices that include the connected components. The conductive path between connected components may be a direct conductive path between the components, or the conductive path between connected components may be an indirect conductive path that may include intervening components such as switches, transistors, or other components. In some examples, the flow of signals between connected components may be temporarily interrupted using one or more intervening components, such as switches or transistors.

[0085] The term "couple" refers to a state of transition from an open-circuit relationship between components where signals are not currently able to pass between the components (e.g., via conductive paths) to a closed-circuit relationship between the components where signals are able to pass between the components (e.g., via conductive paths). When a component, such as a controller, couples other components to one another, the component causes a change that allows signals to pass between those other components via conductive paths that did not previously allow signals to pass.

[0086] The term "isolated" refers to a relationship between components where signals cannot currently flow between them. Components are isolated from one another if there is an open circuit between them. For example, two components separated by a switch located between them are isolated from one another when the switch is open. When a controller isolates two components, the controller makes a change that prevents signals from flowing between the components using the conductive path that previously carried the signal.

[0087] The description set forth herein, along with the accompanying drawings, sets forth example configurations and does not represent every embodiment that may be implemented or that is within the scope of the claims. As used herein, the term "exemplary" means "serving as an example, instance, or illustration" and does not mean "preferred" or "advantageous over other embodiments." The detailed description includes specific details to enable an understanding of the described technology. However, these technologies may be practiced without these specific details. In some instances, well-known structures and devices are shown in block diagram form in order to avoid obscuring the concepts of the described embodiments.

[0088] In the accompanying drawings, similar components or features may have the same reference number. Also, various components of the same type may be distinguished by following the reference number with a dash and a second number that distinguishes between the similar components. When only the first reference number is used in this specification, the description applies to any one of the similar components having the same first reference number, regardless of the second reference number.

[0089] As used herein, including the claims, the use of "or" in a list of items (e.g., a list of items preceded by a phrase such as "at least one of" or "one or more of") indicates an inclusive list, such that a list of one of A, B, or C means A or B or C or AB or AC or BC or ABC (i.e., A and B and C). Also, as used herein, the phrase "based on" should not be construed as referring to a closed set of conditions. For example, an example step described as "based on condition A" could be based on both condition A and condition B without departing from the scope of the present disclosure. In other words, as used herein, the phrase "based on" should be construed similarly to the phrase "based at least in part on."

[0090] The description herein is provided to enable any person skilled in the art to make or use the present disclosure. Various modifications to the present disclosure will be apparent to those skilled in the art, and the general principles defined herein may be applied to other variations without departing from the scope of the present disclosure. Thus, the present disclosure is not limited to the embodiments and designs shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. coupling a surface of a first semiconductor component to a first portion of a surface of a second semiconductor component, the first semiconductor component including one or more memory arrays and the second semiconductor component including control circuitry for accessing the one or more memory arrays, wherein the coupling of the surface of the first semiconductor component to the first portion of the surface of the second semiconductor component forms a communicative coupling between the one or more memory arrays and the control circuitry; and bonding the surface of the third semiconductor component to the second portion of the surface of the second semiconductor component without forming a communicative bond between the third semiconductor component and the second semiconductor component, based at least in part on fusing a first material on a surface of the third semiconductor component to a second material on the second portion of the surface of the second semiconductor component.

2. bonding the surface of the first semiconductor component to the first portion of the surface of the second semiconductor component; 10. The method of claim 1, comprising fusing one or more portions of a first conductive material on the surface of the first semiconductor component to one or more portions of a second conductive material on the first portion of the surface of the second semiconductor component.

3. bonding the surface of the first semiconductor component to the first portion of the surface of the second semiconductor component; 3. The method of claim 2, comprising fusing one or more portions of a first dielectric material on the surface of the first semiconductor component to one or more portions of a second dielectric material on the first portion of the surface of the second semiconductor component.

4. The method of claim 3 , wherein at least a portion of the second material and at least a portion of the second dielectric material are contiguous at the surface of the second semiconductor component.

5. 10. The method of claim 1, further comprising forming the first material on the surface of the third semiconductor component based at least in part on oxidizing, nitriding, or carbonizing a semiconductor portion of the third semiconductor component, or a combination thereof.

6. 10. The method of claim 1, further comprising forming the first material on the surface of the third semiconductor component based at least in part on depositing an oxide material, a nitride material, a carbide material, or a combination thereof, on the surface of the third semiconductor component.

7. 10. The method of claim 1, further comprising forming a mold compound adjacent to the first semiconductor component, adjacent to the third semiconductor component, or between the first semiconductor component and the third semiconductor component, or a combination thereof.

8. depositing the first semiconductor component into an opening through the third semiconductor component after bonding the third semiconductor component to the second portion of the surface of the second semiconductor component; 10. The method of claim 1, further comprising: bonding the surface of the first semiconductor component to the first portion of the surface of the second semiconductor component while the first semiconductor component is within the opening.

9. bonding the surface of the third semiconductor component to the second portion of the surface of the second semiconductor component; 10. The method of claim 1, further comprising: depositing the third semiconductor component between a set of a plurality of first semiconductor components after bonding the set of a plurality of first semiconductor components to the second semiconductor component.

10. the first semiconductor component a first semiconductor die including a first subset of the one or more memory arrays; a second semiconductor die coupled to the first semiconductor die, the second semiconductor die including a second subset of the one or more memory arrays.

11. 10. The method of claim 1, further comprising forming a semiconductor assembly including the first semiconductor component, a portion of the second semiconductor component, and a portion of the third semiconductor component based at least in part on a separation through the second semiconductor component and the third semiconductor component.

12. The method of claim 1 , wherein the second semiconductor component comprises a semiconductor wafer configured for bonding with a plurality of first semiconductor components.

13. The method of claim 1 , wherein the third semiconductor component is formed without circuitry.

14. The method of claim 1 , wherein the first material is formed over a polycrystalline silicon portion of the third semiconductor component.

15. a first semiconductor component including one or more memory arrays; a second semiconductor component including control circuitry for accessing the one or more memory arrays, wherein a surface of the first semiconductor component and a first portion of a surface of the second semiconductor component are coupled by a communicative coupling between the one or more memory arrays and the control circuitry; a third semiconductor component, wherein a surface of the third semiconductor component and a second portion of the surface of the second semiconductor component are coupled without a communicative bond between the third semiconductor component and the second semiconductor component, and wherein the coupling between the surface of the third semiconductor component and the second portion of the surface of the second semiconductor component is based at least in part on a fusion bond between a first material at the surface of the third semiconductor component and a second material at the second portion of the surface of the second semiconductor component.

16. the first semiconductor component a first semiconductor die including a first subset of the one or more memory arrays; a second semiconductor die coupled between the first semiconductor die and the second semiconductor component, the second semiconductor die including a second subset of the one or more memory arrays.

17. 16. The apparatus of claim 15, wherein the bonding of the first portion of the surface of the second semiconductor component to the surface of the first semiconductor component comprises a fusion bond between a first conductive material on the surface of the first semiconductor component and a second conductive material on the first portion of the surface of the second semiconductor component.

18. 18. The apparatus of claim 17, wherein the bonding of the first portion of the surface of the second semiconductor component to the surface of the first semiconductor component comprises a fusion bond between a first dielectric material at the surface of the first semiconductor component and a second dielectric material at the first portion of the surface of the second semiconductor component.

19. 20. The apparatus of claim 18, wherein at least a portion of the second material and at least a portion of the second dielectric material are contiguous at the surface of the second semiconductor component.

20. 16. The apparatus of claim 15, further comprising a molding compound adjacent to the first semiconductor component, adjacent to the third semiconductor component, or between the first semiconductor component and the third semiconductor component, or any combination thereof.

21. 16. The apparatus of claim 15, wherein the third semiconductor component is formed without circuitry.

22. 16. The apparatus of claim 15, wherein the first material is formed over a polycrystalline silicon portion of the third semiconductor component.

23. coupling a surface of a first semiconductor component to a first portion of a surface of a second semiconductor component, the first semiconductor component including one or more memory arrays, the second semiconductor component including control circuitry for accessing the one or more memory arrays, the coupling of the surface of the first semiconductor component to the first portion of the surface of the second semiconductor component forming a communicative coupling between the one or more memory arrays and the control circuitry; coupling the surface of the third semiconductor component to the second portion of the surface of the second semiconductor component without forming a communicative bond between the third semiconductor component and the second semiconductor component based at least in part on fusing a first material on the surface of the third semiconductor component to a second material on the second portion of the surface of the second semiconductor component; 1. An apparatus formed by a process comprising:

24. 24. The apparatus of claim 23, formed by the process including bonding the surface of the first semiconductor component to the first portion of the surface of the second semiconductor component based at least in part on fusing one or more portions of a first conductive material on the surface of the first semiconductor component to one or more portions of a second conductive material on the first portion of the surface of the second semiconductor component.

25. 25. The apparatus of claim 24, formed by the process including bonding the surface of the first semiconductor component to the first portion of the surface of the second semiconductor component based at least in part on fusing one or more portions of a first dielectric material on the surface of the first semiconductor component to one or more portions of a second dielectric material on the first portion of the surface of the second semiconductor component.

26. 26. The apparatus of claim 25, wherein at least a portion of the second material and at least a portion of the second dielectric material component are contiguous at the surface of the second semiconductor component.

27. coupling a surface of a first semiconductor component to a first portion of a surface of a second semiconductor component, the first semiconductor component including one or more memory arrays and the second semiconductor component including control circuitry for accessing the one or more memory arrays, wherein the coupling of the surface of the first semiconductor component to the first portion of the surface of the second semiconductor component forms a communicative coupling between the one or more memory arrays and the control circuitry; and bonding the surface of the third semiconductor component to the second portion of the surface of the second semiconductor component without forming a communicative bond between the third semiconductor component and the second semiconductor component, based at least in part on fusing a first dielectric material on the surface of the third semiconductor component to a second dielectric material on the second portion of the surface of the second semiconductor component.

28. 28. The method of claim 27, wherein the first dielectric material and the second dielectric material comprise an oxide of silicon, a nitride of silicon, a carbide of silicon, or a combination thereof.

29. a first semiconductor component including one or more memory arrays; a second semiconductor component including control circuitry for accessing the one or more memory arrays, wherein a surface of the first semiconductor component and a first portion of a surface of the second semiconductor component are coupled by a communicative coupling between the one or more memory arrays and the control circuitry; a third semiconductor component, wherein a surface of the third semiconductor component and a second portion of the surface of the second semiconductor component are coupled without a communicative bond between the third semiconductor component and the second semiconductor component, and wherein the coupling of the surface of the third semiconductor component to the second portion of the surface of the second semiconductor component is based at least in part on a fusion bond between a first dielectric material at the surface of the third semiconductor component and a second dielectric material at the second portion of the surface of the second semiconductor component.

30. 30. The apparatus of claim 29, wherein the first dielectric material and the second dielectric material comprise an oxide of silicon, a nitride of silicon, a carbide of silicon, or a combination thereof.

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