Method of manufacturing semiconductor device

Abstract

To provide a method of manufacturing a semiconductor device capable of suppressing the occurrence of connection failure in a manufacturing process of the semiconductor device.SOLUTION: The method includes surface-modifying a first region 2a of a plastic film 2b on at least one of a front face of a substrate 2 and an electrode-formed face of a chip 3 to be hydrophilic, supplying a liquid to at least one of the front face of the substrate 2 and the electrode-formed face of the chip 3, placing one of the substrate 2 and the chip 3 on the other via the liquid in a state where at least one of the chip 3 and the substrate 2 is released, and joining the front face of the substrate 2 and the electrode-formed face of the chip 3 by evaporating the liquid.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present invention relates to a method for manufacturing a semiconductor device. [Background technology]

[0002] In order to electrically connect a semiconductor chip to wiring on a substrate, it is necessary to align the terminals of the semiconductor chip with predetermined positions on the substrate. Self-alignment techniques using liquid droplets are known as such alignment techniques. For example, Patent Document 1 discloses an alignment technique that utilizes the self-alignment effect of liquid droplets in the manufacturing process of an optical module, by dropping a liquid onto a mounting area on an interposer substrate and placing an electrical element on the droplet. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2014-57019 Summary of the Invention [Problem to be solved by the invention]

[0004] However, in the manufacturing process of the optical module described in Patent Document 1, if the above-mentioned self-alignment is performed with a foreign object remaining between the interposer substrate and the electrical element, there is a risk of a connection failure. For example, if a foreign object with a diameter equal to or greater than the height of the terminal portion of the electrical element enters between the interposer substrate and the electrical element, a void will occur between the electrical element and the interposer substrate, causing a connection failure between the terminal portion of the electrical element and the electrical wiring of the interposer substrate.

[0005] SUMMARY OF THE INVENTION It is therefore an object of the present invention to provide a method for manufacturing a semiconductor device that can prevent the occurrence of connection defects during the manufacturing process of the semiconductor device. [Means for solving the problem]

[0006] A first aspect of the present invention provides a method for manufacturing a semiconductor device including a substrate and a semiconductor chip mounted on the surface of the substrate, and includes the steps of: modifying the surface of a first region of a resin film on at least one of the surface of the substrate and the electrode formation surface of the semiconductor chip to be hydrophilic; supplying a liquid to at least one of the surface of the substrate and the electrode formation surface of the semiconductor chip; placing one of the substrate and the semiconductor chip on the other with the liquid interposed therebetween while at least one of the semiconductor chip and the substrate is released; and evaporating the liquid to bond the surface of the substrate and the electrode formation surface of the semiconductor chip.

[0007] According to this aspect, the self-alignment process is performed using a resin film on at least one of the substrate and the semiconductor chip. With this configuration, even if a foreign object gets between the substrate and the semiconductor chip, the foreign object can be absorbed by the resin film, for example, thereby suppressing the occurrence of voids. Therefore, the occurrence of poor connections between the substrate and the semiconductor chip can be suppressed. [Effects of the Invention]

[0008] The present invention can provide a method for manufacturing a semiconductor device that can suppress the occurrence of connection defects during the manufacturing process of the semiconductor device. [Brief explanation of the drawings]

[0009] [Figure 1] FIG. 2 is a perspective view illustrating a method for manufacturing the semiconductor device according to the first embodiment of the present invention. [Figure 2] 3 is a flowchart showing a method for manufacturing a semiconductor device according to the first embodiment of the present invention. [Figure 3] FIG. 3 is a cross-sectional view showing an example after step S1 in FIG. 2 is performed. [Figure 4] FIG. 3 is a cross-sectional view showing an example after step S2 in FIG. 2 is performed. [Figure 5] FIG. 3 is a cross-sectional view showing an example after step S3 in FIG. 2 is performed. [Figure 6] FIG. 3 is a cross-sectional view showing an example after step S4 in FIG. 2 is performed. [Figure 7] FIG. 3 is a cross-sectional view showing an example after step S5 in FIG. 2 is performed. [Figure 8] FIG. 3 is a cross-sectional view showing an example of step S6 in FIG. 2 during execution. [Figure 9] FIG. 3 is a cross-sectional view showing an example after step S6 in FIG. 2 is performed. [Figure 10] FIG. 3 is a cross-sectional view showing an example of step S7 in FIG. 2 during execution. [Figure 11] FIG. 3 is a cross-sectional view showing an example after step S8 in FIG. 2 is performed. [Figure 12] 1 is a perspective view illustrating a semiconductor device manufactured by a method for manufacturing a semiconductor device according to a first embodiment of the present invention. [Figure 13] FIG. 10 is a perspective view illustrating a method for manufacturing a semiconductor device according to a second embodiment of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0010] The present invention will be described below through embodiments of the invention, but the invention according to the claims is not limited to the following embodiments. Furthermore, not all of the configurations described in the embodiments are necessarily essential as means for solving the problems. In each drawing, components with the same reference numerals have the same or similar configurations.

[0011] To explain the relative directional relationships, in the coordinate notation shown in the lower right of Figure 1, the positive X-axis direction is called the right direction, the positive Y-axis direction is called the back direction, and the positive Z-axis direction is called the up direction. The negative X-axis direction is called the left direction, the negative Y-axis direction is called the front direction, and the negative Z-axis direction is called the down direction. The coordinate notation shown in Figure 1 is consistent with the coordinate notation in Figure 2 and subsequent figures.

[0012] 1. The cross-sectional views (FIGS. 3 to 11) in each step of the flowchart of the semiconductor device manufacturing method in FIG. 2 are the same as the cross-sectional view taken along line XI-XI of the substrate 2 and the semiconductor chip 3 shown in FIG.

[0013] First Embodiment Fig. 1 is a perspective view showing a semiconductor device in the middle of manufacturing according to a first embodiment of the present invention. For convenience of explanation, Fig. 1 shows only the main components of the semiconductor device, and the rest is shown transparently. The semiconductor device 1 is manufactured by bonding a substrate 2 and a semiconductor chip 3. The semiconductor device 1 is, for example, a modular product such as a MEMS (Micro Electro Mechanical Systems), an LSI (Large Scale Integration), an IC (Integrated Circuit), an MPU (Micro Processing Unit), a RAM (Random Access Memory), or a ROM (Read Only Memory).

[0014] The substrate 2 has a surface on which the semiconductor chip 3 can be mounted. The substrate 2 may be a semiconductor substrate such as a silicon wafer, a SiC wafer, or a GaN wafer. The substrate 2 may also be a resin material substrate such as a printed circuit board or an interposer board. In this way, by using resin as the material for the substrate 2, the manufacturing cost of the semiconductor device 1 can be reduced.

[0015] The first resin film 2a is formed on the surface of the substrate 2. The first resin film 2a is typically water-repellent. Examples of such resin materials include polymeric materials such as polyimide and polyethylene. The substrate 2 itself may be a resin material substrate, in which case the resin film forming step can be omitted.

[0016] The first resin film 2a has a first region 2b. The first region 2b is a hydrophilic region formed by modifying the surface of the first resin film 2a. The first region 2b may be a region formed by patterning a portion of the first resin film 2a. In this case, the first resin film 2a has a water-repellent region and a hydrophilic region (corresponding to the first region 2b). Alternatively, the first resin film 2a may be composed of only the first region 2a, which is a hydrophilic region. That is, the first region 2b may be formed by providing the first resin film 2a only in a region where a hydrophilic region is desired. The surface of the first resin film 2a may be modified by, for example, exposing the polymer material constituting the first resin film 2a to plasma, thereby forming hydrophilic functional groups on the surface of the first resin film 2a, thereby modifying the surface to be hydrophilic. The detailed shape of the first region 2b will be described later with reference to FIG. 7.

[0017] The narrowest width of the first region 2b formed in this manner is, for example, 1 μm or less. Furthermore, when the substrate 2 is a substrate made of resin, such as a printed circuit board or an interposer board, a separate resin film may be omitted and the first region 2b may be formed directly on the substrate 2 by, for example, plasma processing. The surface of the first resin film 2a may be modified at the atomic layer level using an ALD (Atomic Layer Deposition) device or the like. The first region 2b can be formed by a combination of, for example, photolithography, deposition, etching, and the like, in addition to modifying the surface of the first resin film 2a.

[0018] The substrate 2 has a plurality of first electrodes 2c. Each of the first electrodes 2c is formed so that at least a portion thereof is exposed from the first resin film 2a in order to bond with a second electrode 3c of the semiconductor chip 3, which will be described later. The first electrodes 2c are, for example, composed of an electrode terminal et and a wiring w, and in this case, the electrode terminal et is formed so that at least a portion thereof is exposed from the first resin film 2a. The electrode terminal et has, for example, a land portion whose line width is larger than that of the wiring w.

[0019] The electrode terminal et is provided so as to be substantially flush with the surface of the first resin film 2a, or alternatively, the electrode terminal et may protrude from the surface of the first resin film 2a, or conversely, may protrude beyond the surface of the first resin film 2a.

[0020] The wiring w may be formed so as to be covered with the first resin film 2a, or a part of it may be exposed from the first resin film 2a. The first electrode 2c may be composed of multiple metal layers, and the electrode terminal et and the wiring w may have different layer structures.

[0021] The semiconductor chip 3 has an electrode-forming surface that can be electrically connected to the substrate 2. The semiconductor chip 3 may be a resin-sealed package of electronic components that have predetermined functions, such as a combination of resistors, coils, capacitors, piezoelectric elements, sensors, actuators, switches, etc.

[0022] The second resin film 3a is formed on the electrode formation surface of the semiconductor chip 3. The second resin film 3a may have, for example, the same material and properties as the above-described first resin film 2a. Note that if the electrode formation surface of the semiconductor chip 3 contains a resin material, such as when the semiconductor chip 3 is resin-sealed and packaged, the resin film formation step can be omitted.

[0023] The second resin film 3a has a second region 3b. The second region 3b is a hydrophilic region formed by modifying the surface of the second resin film 3a. The second region 3b may be formed by patterning a portion of the second resin film 3a. In this case, the second resin film 3a has a water-repellent region and a hydrophilic region (corresponding to the second region 3b). Alternatively, the second resin film 3a may be composed only of the second region 3b, which is a hydrophilic region. That is, the second resin film 3a may be provided only in a region where a hydrophilic region is desired to be provided, thereby providing the second resin film 3a. The surface of the second resin film 3a may be modified by, for example, exposing the polymer material constituting the second resin film 3a to plasma, thereby forming hydrophilic functional groups on the surface of the second resin film 3a, thereby modifying the surface to be hydrophilic. The detailed shape of the second region 3b will be described later with reference to FIG. 7.

[0024] The narrowest width of the second region 3b formed in this manner is, for example, 1 μm or less. Furthermore, if the semiconductor chip 3 is packaged, for example, by resin sealing, a separate resin film may be omitted and the second region 3b may be formed directly on the package by, for example, plasma processing. The surface of the second resin film 3a may be modified at the atomic layer level using an ALD (Atomic Layer Deposition) device or the like. The second region 3b may be formed on the back surface of the second resin film 3a or by a combination of, for example, photolithography, deposition, etching, and the like.

[0025] The semiconductor chip 3 has a plurality of second electrodes 3c. Each second electrode 3c is formed so that at least a portion thereof is exposed from the second resin film 3a in order to bond with the first electrode 2c of the substrate 2. The second electrodes 3c may be electrode pads ep. The electrode pads ep are provided, for example, so as to be substantially flush with the surface of the second resin film 3a. Alternatively, the electrode pads ep may protrude from the surface of the second resin film 3a, or conversely, protrude from the surface of the second resin film 3a. The semiconductor device 1 may be configured such that the plurality of electrode pads ep constituting the second electrodes 3c of the semiconductor chip 3 are selectively connected to the electrode terminals et of the first electrodes 2c of the substrate 2 in the substrate 2 and the semiconductor chip 3.

[0026] As shown in Fig. 1, the first region 2b of the first resin film 2a and the second region 3b of the second resin film 3a are each modified to be hydrophilic. In the example shown in Fig. 1, the first regions 2b1 and 2b2 are divided into two parts and are formed to surround the first electrodes 2c1 to 2c4 and the electrode terminals et of the other plurality of first electrodes 2c. The second region 3b is rectangular and annular and is formed to surround the electrode pads ep of the plurality of second electrodes 3c.

[0027] At this time, the first region 2b and the second region 3b are formed into a shape that corresponds to self-alignment in order to perform a self-alignment process on the semiconductor chip 3 (described later) relative to the substrate 2. The shape that corresponds to self-alignment refers to a combination of shapes of the first and second regions 2b, 3b that allow the first and second electrodes 2c, 3c to be properly bonded by performing a self-alignment process, in addition to a case where the first and second regions 2b, 3b are opposed to each other and have substantially the same shape as the outlines of the regions, as shown in Fig. 1.

[0028] 2 is a flowchart showing an example of the method for manufacturing a semiconductor device according to this embodiment. As shown in FIG. 2, the method for manufacturing a semiconductor device according to this embodiment proceeds, for example, along steps S1 to S8.

[0029] 2 to 12, an example will be described in which a resin film is formed on each of the surface of the substrate 2 and the electrode formation surface of the semiconductor chip 3. Note that the present invention is not limited to this embodiment, and can also be applied to a case in which a resin film is formed only on the surface of the substrate 2, or a case in which a resin film is formed only on the electrode formation surface of the semiconductor chip 3. Furthermore, as already explained, if both the substrate 2 and the semiconductor chip 3 contain a resin material, the separate resin film formation step can be omitted.

[0030] In step S1, a first resin film 2a is formed on the surface of the substrate 2. The first resin film 2a can be formed, for example, by applying a resin to the surface of the substrate 2 and using a spin coating method.

[0031] 3 is a cross-sectional view showing an example after step S1 is performed. After step S1 is performed, a first resin film 2a is formed on the surface of the substrate 2. The first resin film 2a is formed so as to expose the plurality of first electrodes 2c1-2c4 formed on the substrate 2. For example, the first resin film 2a can be formed by applying a resin to the entire surface of the substrate 2 by a spin coating method, and then patterning the resin using a resist or the like.

[0032] In step S2, a second resin film 3a is formed on the surface of the semiconductor chip 3. The second resin film 3a may be formed by the same method as that for the first resin film 2a, or may be formed by a different method.

[0033] 4 is a cross-sectional view showing an example after step S2 is performed. After step S2 is performed, a second resin film 3a is formed on the back surface of the semiconductor chip 3. The second resin film 3a is formed so that the multiple second electrodes 3c formed on the semiconductor chip 3 are exposed.

[0034] In step S3, the first region 2b of the first resin film 2a is surface-modified to be hydrophilic. The surface modification of the first region 2b of the first resin film 2a may be performed, for example, by irradiating the first region 2b on the first resin film 2a with plasma. For example, by irradiating the first region 2b with plasma through a mask having a predetermined pattern, the first region 2b can be partially formed with hydrophilic properties on the first resin film 2a.

[0035] Here, Fig. 5 is a cross-sectional view showing an example after step S3 is performed. After step S3 is performed, first regions 2b1 and 2b2 of first resin film 2a are modified to be hydrophilic. First regions 2b1 and 2b2 are formed near first electrode 2c1 and first electrodes 2c2 to 2c4, respectively. As shown in Fig. 5, on first resin film 2a, first region 2b is divided into two parts, first regions 2b1 and 2b2, which are modified to surround first electrode 2c1 and first electrodes 2c2 to 2c4, respectively.

[0036] In step S4, the second region 3b of the second resin film 3a is surface-modified to be hydrophilic. The surface modification of the second region 3b of the second resin film 3a may be performed, for example, by irradiating the second region 3b on the second resin film 3a with plasma. For example, by irradiating the second region 3b with plasma through a mask having a predetermined pattern, the second region 3b can be partially formed with hydrophilic properties on the second resin film 3a.

[0037] Here, Figure 6 is a cross-sectional view showing an example after step S4 is performed. After step S4 is performed, the second region 3b of the second resin film 3a is modified to be hydrophilic. The second region 3b is formed in the vicinity of the second electrode 3c. As shown in Figure 6, on the second resin film 3a, the second region 3b is modified so as to entirely surround the multiple second electrodes 3c.

[0038] In step S5, droplets of liquid are supplied between the surface of the substrate 2 on which the first resin film 2a is provided and the electrode formation surface of the semiconductor chip 3 on which the second resin film 3a is provided. For example, the liquid is dropped onto an area including the first region 2b. At this time, the substrate 2 may be vibrated so that the liquid spreads over the entire first region 2b. The liquid may be, for example, pure water. The liquid may be supplied onto the electrode formation surface of the semiconductor chip 3, or may be supplied onto both the surface of the substrate 2 and the electrode formation surface of the semiconductor chip 3.

[0039] 7 is a cross-sectional view showing an example after execution of step S5. As shown in FIG. 7, the liquid dropped onto the first region 2b gathers into a spherical shape due to surface tension to form droplets DL.

[0040] In step S6, a self-alignment process is performed using the droplets DL. Specifically, the position of the semiconductor chip 3 is self-aligned using the droplets DL, the first region 2b of the substrate 2, and the second region 3b of the semiconductor chip 3. For example, the semiconductor chip 3 is transported to a predetermined position on the surface of the substrate 2, and then lowered with its electrode-formed surface facing downward and released, so that the electrode-formed surface of the semiconductor chip 3 comes into contact with the droplets DL supplied to the surface of the substrate 2. The semiconductor chip 3 is placed on the droplets DL and placed on the substrate 2 via the droplets DL. At this time, the surface tension of the droplets DL causes the droplets DL to spread over the entire second region 3b of the second resin film 3a, automatically aligning the first electrodes 2c of the substrate 2 with the second electrodes 3c of the semiconductor chip 3.

[0041] 8 is a cross-sectional view showing an example during execution of step S6, and FIG. 9 is a cross-sectional view showing an example after execution of step 6. The first region 2b1 and the second region 3b are formed so that when the substrate 2 and the semiconductor chip 3 are appropriately aligned, their outlines coincide in the X-axis direction. This allows the substrate 2 and the semiconductor chip 3 to be appropriately aligned using the droplets DL.

[0042] More specifically, as shown in FIG. 8, immediately after the semiconductor chip 3 is brought into contact with the droplet DL, the left end of the second region 3b of the semiconductor chip 3 has a deviation Dg relative to the left end of the first hydrophilic region 2b1 of the substrate 2.

[0043] 9, a self-alignment process is performed using droplets DL, and the outer contour of the first region 2b of the semiconductor chip 3 and the outer contour of the second region 3b of the substrate 2 are aligned so that their left and right ends in the X-axis direction coincide with each other. Note that, in the process of transitioning from the state shown in FIG. 8 to the state shown in FIG. 9, a process of vibrating the substrate 2 may be performed.

[0044] In step S7, the droplets DL are removed. The droplets DL may be removed after the contour of the first region 2b of the substrate 2 and the contour of the second region 3b of the semiconductor chip 3 are aligned. The droplets DL may be removed, for example, by drying the droplets DL. That is, a drying process may be performed on the substrate 2 and the semiconductor chip 3 to evaporate the droplets DL. Drying may be performed by blowing air, or natural drying may be performed by leaving them for a predetermined period of time. Furthermore, the substrate 2 and the semiconductor chip 3 may be vibrated during at least a portion of the drying process, thereby simultaneously removing the droplets DL and performing a self-alignment process using the droplets DL. Note that in step S7, it is sufficient that at least a portion of the droplets DL is removed, and some of the droplets DL may remain. For example, the droplets DL may not be completely removed by evaporation, and a small amount of liquid may remain between the substrate 2 and the semiconductor chip 3 when they are joined.

[0045] Here, Fig. 10 is a cross-sectional view showing an example of step S7 in progress. As shown in Fig. 10, in the process of removing the droplet DL, the volume of the droplet DL gradually decreases, and the first electrode 2c of the substrate 2 and the second electrode 3c of the semiconductor chip 3 approach each other. Note that, even in the process of transitioning from the state of Fig. 9 to the state of Fig. 10, the droplet DL contributes to matching the outline of the first region 2b of the substrate 2 with the outline of the second region 3b of the semiconductor chip 3.

[0046] In step S8, the substrate 2 and the semiconductor chip 3 are bonded. After the removal of the droplets DL is completed and the first electrodes 2c of the substrate 2 and the second electrodes 3c of the semiconductor chip 3 are aligned, the electrodes are bonded together. The electrodes are bonded by, for example, melting at least one of the first and second electrodes 2c, 3c by heating or the like. Alternatively, for example, the first and second electrodes 2c, 3c may be bonded via a molten metal such as solder. Alternatively, for example, the first and second electrodes 2c, 3c may be bonded using Coulomb force.

[0047] 11 is a cross-sectional view showing an example of the state after step S8 is performed. As shown in FIG. 11, the first electrodes 2c of the substrate 2 and the second electrodes 3c of the semiconductor chip 3 are aligned and bonded to each other.

[0048] 12 is a perspective view showing a semiconductor device manufactured according to the first embodiment of the present invention. For convenience of explanation, Fig. 12 shows only the main components of the semiconductor device, and the remaining components are shown transparently. As shown in Fig. 12, after step S8 is performed, the semiconductor chip 3 is bonded to the substrate 2, and the semiconductor device 1 is manufactured.

[0049] As described above, according to the semiconductor device manufacturing method of this embodiment, a self-alignment process is performed using a resin film on at least one of the substrate 2 and the semiconductor chip 3. With this configuration, even if foreign matter such as particles gets between the substrate 2 and the semiconductor chip 3, the foreign matter can be absorbed by the resin film, for example, and the generation of voids due to the foreign matter can be suppressed. Therefore, the self-alignment process between the substrate 2 and the semiconductor chip 3 can be performed while suppressing the occurrence of connection failures between the substrate 2 and the semiconductor chip 3.

[0050] Furthermore, the semiconductor device manufacturing method of this embodiment can suppress bonding defects caused by foreign matter even if the foreign matter is present, and therefore can be manufactured in a clean room with a lower cleanliness level than conventional processes. For example, the semiconductor device manufacturing method of this embodiment may be performed in a clean room with a cleanliness level of about Class 6 as defined in the international standard ISO1464-1:2015. In this way, the semiconductor device manufacturing method of this embodiment can expand the options for manufacturing conditions compared to conventional methods.

[0051] Second Embodiment FIG. 13 shows a semiconductor device in the middle of manufacturing according to a second embodiment of the present invention. For ease of explanation, FIG. 13 also shows only the main components of the semiconductor device, and the remaining components are shown transparently. This embodiment differs from the first embodiment in that a resin film is not formed on the semiconductor chip 30. In this case, the hydrophilic second region 30b of the semiconductor chip 30 may be made of a material other than a resin material. Additionally, this embodiment differs from the first embodiment in the shape of the hydrophilic first region 20b of the substrate 20 and the shape of the hydrophilic second region 30b of the semiconductor chip 30.

[0052] As shown in FIG. 13, the shape of the hydrophilic first region 20b in the substrate 20 and the shape of the hydrophilic second region 30b in the semiconductor chip 30 are substantially identical to each other. In the example shown in FIG. 13, the first region 20b and the second region 30b are substantially rectangular, the same as the electrode formation surface of the semiconductor chip 30. If the shapes are compatible with self-alignment, the first electrode 20c and the second electrode 30c can be properly bonded by performing a self-alignment process on the substrate 20 and the semiconductor chip 30. Furthermore, if a resin film is provided on either the substrate 20 or the semiconductor chip 30 in this manner, voids occurring between the substrate 20 and the semiconductor chip 30 can be suppressed, thereby mitigating bonding defects.

[0053] Although the embodiments of the present invention have been described above, the present invention is not limited to the above embodiments. For example, in the present invention, if a resin film region on either the substrate or the semiconductor chip is surface-modified to be hydrophilic, a self-alignment process can be performed using a droplet between the substrate and the semiconductor chip and the hydrophilic region. Furthermore, in the above embodiments, a resin film is provided in a peripheral region of an electrode (pad), but it does not necessarily have to be provided in a shape surrounding the electrode; for example, it may be provided near the electrode. Furthermore, in the above embodiments, a resin film is described as being patterned into a predetermined shape, but it may also be provided on the entire surfaces of the semiconductor chip and the substrate that face each other.

[0054] The above-described embodiments are intended to facilitate understanding of the present invention and are not intended to limit the scope of the present invention. The present invention may be modified or improved without departing from its spirit, and equivalents are also included within the scope of the present invention. In other words, designs modified by those skilled in the art as appropriate are also encompassed within the scope of the present invention as long as they incorporate the characteristics of the present invention. For example, the elements of the embodiments, as well as their arrangement, materials, conditions, shape, size, etc., are not limited to those exemplified and can be modified as appropriate. Furthermore, the elements of the embodiments can be combined to the extent technically possible, and such combinations are also encompassed within the scope of the present invention as long as they incorporate the characteristics of the present invention.

[0055] (Appendix 1) The method for manufacturing a semiconductor device according to this embodiment is a method for manufacturing a semiconductor device including a substrate and a semiconductor chip mounted on the surface of the substrate, and includes the steps of: modifying the surface of a first region of a resin film on at least one of the surface of the substrate and the electrode formation surface of the semiconductor chip to be hydrophilic; supplying a liquid to at least one of the surface of the substrate and the electrode formation surface of the semiconductor chip; placing one of the substrate and the semiconductor chip on the other via the liquid while at least one of the semiconductor chip and the substrate is released; and evaporating the liquid to bond the surface of the substrate and the electrode formation surface of the semiconductor chip.

[0056] (Appendix 2) In the method for manufacturing a semiconductor device described in Supplementary Note 1 above, the step of modifying the surface of the first region to be hydrophilic is a step of modifying the surface of the first region of the first resin film formed on the substrate to be hydrophilic.

[0057] (Appendix 3) The method for manufacturing a semiconductor device described in Appendix 2 above further includes the steps of forming a second resin film on the electrode formation surface of the semiconductor chip and modifying the surface of the second resin film on the electrode formation surface of the semiconductor chip to be hydrophilic, and the placing step self-aligns the semiconductor chip to the substrate by the liquid, the first region of the first resin film on the substrate, and the second region of the second resin film on the semiconductor chip.

[0058] (Appendix 4) In the method for manufacturing a semiconductor device described in any one of Supplementary Notes 1 to 3 above, the step of surface-modifying the first region to make it hydrophilic is a step of surface-modifying the first region of a first resin film formed on a semiconductor chip to make it hydrophilic.

[0059] (Appendix 5) In the method for manufacturing a semiconductor device according to any one of Supplementary Note 1 to Supplementary Note 4, the step of modifying the surface of the first region of the resin film to make it hydrophilic includes subjecting the first region to plasma treatment.

[0060] (Appendix 6) In the method for manufacturing a semiconductor device described in any one of Supplementary Notes 1 to 5 above, the step of joining the surface of the substrate and the electrode formation surface of the semiconductor chip includes drying the substrate and the semiconductor chip to evaporate the liquid.

[0061] (Appendix 7) In the method for manufacturing a semiconductor device according to any one of Supplementary Notes 1 to 6, the substrate is a semiconductor substrate.

[0062] (Appendix 8) In the method for manufacturing a semiconductor device according to any one of Supplementary Notes 1 to 7, the substrate is a resin substrate.

[0063] (Appendix 9) In the method for manufacturing a semiconductor device according to any one of Supplementary Note 1 to Supplementary Note 8, the first region has a narrowest width of 1 μm or less. [Explanation of symbols]

[0064] 1... Semiconductor device, 2,20... Substrate, 2a, 20a... First resin film, 2b, 20b... First region, 2c, 20c, 20c1, 20c2, 20c3, 20c4... First electrode, 3, 30...Semiconductor chip, 3a...Second resin film, 3b, 30b...Second region, 3c(ep),30c(ep)...Second electrode, DL...Droplet, Dg...Misalignment amount, et...Electrode terminal, w...Wiring

Claims

1. A method for manufacturing a semiconductor device including a substrate and a semiconductor chip mounted on a surface of the substrate, comprising: a step of surface-modifying a first region of a resin film on at least one of the surface of the substrate and the electrode-forming surface of the semiconductor chip to be hydrophilic; supplying a liquid to at least one of the surface of the substrate and the electrode-forming surface of the semiconductor chip; a step of placing one of the substrate and the semiconductor chip on the other via the liquid while at least one of the semiconductor chip and the substrate is in a released state; a step of evaporating the liquid to bond the surface of the substrate and the electrode-forming surface of the semiconductor chip; A method for manufacturing a semiconductor device, comprising:

2. The step of surface-modifying the first region to be hydrophilic includes: a step of surface-modifying a first region of the first resin film formed on the substrate to make it hydrophilic; The method for manufacturing a semiconductor device according to claim 1 .

3. forming a second resin film on the electrode formation surface of the semiconductor chip; modifying the second region of the second resin film on the electrode formation surface of the semiconductor chip to make it hydrophilic; further comprising the placing step self-aligns the semiconductor chip with respect to the substrate by the liquid, the first region of the first resin film on the substrate, and the second region of the second resin film on the semiconductor chip; The method for manufacturing a semiconductor device according to claim 2 .

4. The step of surface-modifying the first region to be hydrophilic includes: a step of surface-modifying a first region of the first resin film formed on the semiconductor chip to make it hydrophilic; The method for manufacturing a semiconductor device according to claim 1 .

5. the step of surface-modifying the first region of the resin film to be hydrophilic includes subjecting the first region to plasma treatment; The method for manufacturing a semiconductor device according to claim 1 .

6. the step of joining the surface of the substrate and the electrode formation surface of the semiconductor chip includes drying the substrate and the semiconductor chip to evaporate the liquid; The method for manufacturing a semiconductor device according to claim 1 .

7. The method for manufacturing a semiconductor device according to claim 1 , wherein the substrate is a semiconductor substrate.

8. The method for manufacturing a semiconductor device according to claim 1 , wherein the substrate is a resin substrate.

9. 2. The method for manufacturing a semiconductor device according to claim 1, wherein the first region has a narrowest width of 1 [mu]m or less.

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