Laser module and laser processing machine

Abstract

To provide a laser module capable of reducing deviation between a condensing position of light emitted from a first semiconductor laser element and a condensing position of light emitted from a second semiconductor laser element.SOLUTION: And a lens 30 that condenses light emitted from the plurality of laser diodes and has a convex incident surface, wherein, in a first direction Y orthogonal to an optical axis direction of the lens, a length between a first laser diode 20a of the plurality of laser diodes and an optical axis L of the lens is shorter than a length between a second laser diode 20b of the plurality of laser diodes and the optical axis, A wavelength of light emitted from the second semiconductor laser element is longer than a wavelength of light emitted from the first semiconductor laser element.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a laser module and a laser processing machine. [Background technology]

[0002] A laser that combines and emits light from multiple semiconductor laser elements to achieve high output. - modules are known.

[0003] For example, Patent Document 1 discloses a plurality of laser diodes arranged on the same plane, each of which emits a light beam. A laser element and a collimator that parallelizes the light beams emitted from multiple laser elements. The collimated light beams are collected by a lens array and collimated by a collimating lens array to form a combined beam. and a condenser lens for shaping the laser beam. The laser elements are aligned in a direction perpendicular to the optical axis of the condenser lens. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Laid-Open No. 2018-56148 Summary of the Invention [Problem to be solved by the invention]

[0005] In the laser module described above, the laser disposed on the optical axis of the condenser lens The light from the element is incident on the center of the condenser lens and is focused on the laser located far from the optical axis. The light from the element is incident on the edge of the condenser lens, so the monochromatic aberration of the condenser lens causes This causes a shift in the light-condensing position. [Means for solving the problem]

[0006] One aspect of the laser module according to the present invention is A plurality of semiconductor laser elements; A lens having a convex incident surface that collects the light emitted from the plurality of semiconductor laser elements. and, Including, In a first direction perpendicular to the optical axis direction of the lens, The distance between the first semiconductor laser element and the optical axis of the lens is the distance between the second semiconductor laser element and the optical axis is shorter than the distance between the second semiconductor laser element and the optical axis, The wavelength of the light emitted from the second semiconductor laser element is equal to or larger than the wavelength of the light emitted from the first semiconductor laser element. longer than the wavelength of light emitted from

[0007] One aspect of the laser module according to the present invention is A plurality of semiconductor laser elements; A lens having a concave incident surface that collects the light emitted from the plurality of semiconductor laser elements. and, Including, In a first direction perpendicular to the optical axis direction of the lens, The distance between the first semiconductor laser element and the optical axis of the lens is the distance between the second semiconductor laser element and the optical axis is shorter than the distance between the second semiconductor laser element and the optical axis, The wavelength of the light emitted from the second semiconductor laser element is equal to or larger than the wavelength of the light emitted from the first semiconductor laser element. shorter than the wavelength of light emitted from

[0008] One aspect of the laser processing machine according to the present invention is: The laser module is included. [Brief explanation of the drawings]

[0009] [Figure 1]FIG. 1 is a diagram schematically showing a laser module according to a first embodiment. [Figure 2] FIG. 2 is a diagram schematically showing a semiconductor laser element of the laser module according to the first embodiment. [Figure 3] FIG. 2 is a cross-sectional view schematically showing the semiconductor laser element of the laser module according to the first embodiment. [Figure 4] FIG. 2 is a diagram schematically showing an opening of a semiconductor laser element of the laser module according to the first embodiment. [Figure 5] FIG. 2 is a diagram schematically showing an opening of a semiconductor laser element of the laser module according to the first embodiment. [Figure 6] FIG. 2 is a diagram schematically showing an opening of a semiconductor laser element of the laser module according to the first embodiment. [Figure 7] FIG. 2 is a diagram schematically showing an opening of a semiconductor laser element of the laser module according to the first embodiment. [Figure 8] FIG. 2 is a diagram schematically showing an opening of a semiconductor laser element of the laser module according to the first embodiment. [Figure 9] FIG. 2 is a diagram schematically showing an opening of a semiconductor laser element of the laser module according to the first embodiment. [Figure 10] FIG. 10 is a diagram schematically showing a laser module according to a reference example. [Figure 11] FIG. 10 is a diagram schematically showing a laser module according to a modified example of the first embodiment. [Figure 12] FIG. 4 is a diagram schematically showing a semiconductor laser element of a laser module according to a modified example of the first embodiment. [Figure 13] FIG. 10 is a diagram schematically showing a laser module according to a second embodiment. [Figure 14] FIG. 10 is a diagram schematically showing a lens of a laser module according to a second embodiment. [Figure 15] FIG. 10 is a diagram schematically showing a laser processing machine according to a third embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0010] Preferred embodiments of the present invention will be described in detail below with reference to the drawings. The described embodiments are not intended to unduly limit the scope of the claimed invention. In addition, not all of the configurations described below are essential components of the present invention. .

[0011] 1. First embodiment 1.1. Laser module 1.1.1. Overall structure First, a laser module according to a first embodiment will be described with reference to the drawings. FIG. 1 is a diagram schematically illustrating a laser module 100 according to the first embodiment. In FIG. 1, an X-axis, a Y-axis, and a Z-axis are illustrated as three axes that are orthogonal to each other.

[0012] As shown in FIG. 1, the laser module 100 includes, for example, a substrate 10 and a semiconductor laser. The optical system includes a lens element 20 and a lens 30.

[0013] The substrate 10 supports the semiconductor laser element 20. The substrate 10 has a flat surface 12. The semiconductor laser element 20 is provided on the plane 12. The substrate 10 is The semiconductor laser element 20 may be mounted on a submount that dissipates heat. It may also be a driving substrate for driving.

[0014] The semiconductor laser element 20 is provided between the substrate 10 and the lens 30. A plurality of semiconductor laser elements 20 are provided. The light emitted from the semiconductor laser elements 20 is The light is incident on the lens 30. The configuration of the semiconductor laser element 20 will be described later.

[0015] The lens 30 focuses the light emitted from the semiconductor laser elements 20. In the illustrated example, the optical axis L of the lens 30 is in the Z-axis direction. When viewed from the direction, the plurality of semiconductor laser elements 20 are provided inside the outer periphery of the lens 30. When viewed from the Z-axis direction, the semiconductor laser elements 20 overlap with the lens 30. When viewed from the Z-axis direction, the shape of the lens 30 is, for example, circular.

[0016] The lens 30 has an incident surface 32 onto which the light emitted from the semiconductor laser element 20 is incident, and an incident and an exit surface 34 that emits light that has entered the entrance surface 32. The lens 30 is a convex lens. The lens 30 has a complex surface. The light beams emitted from the semiconductor laser elements 20 are collected and combined, and then input to the optical fiber 2. In the illustrated example, the focal point of the lens 30 is located on the entrance 3 of the optical fiber 2. There are.

[0017] 1.1.2. Semiconductor laser element FIG. 2 is a diagram showing a schematic view of a plurality of semiconductor laser elements 20 as viewed from the Z-axis direction. Figure.

[0018] As shown in FIG. 2, the semiconductor laser elements 20 are, for example, arranged periodically. In the example shown in FIG. 2, the plurality of semiconductor laser elements 20 are arranged in a regular triangular grid when viewed from the Z-axis direction. The number of the semiconductor laser elements 20 is not particularly limited. When viewed from this direction, the shape of the semiconductor laser element 20 is, for example, a regular hexagon.

[0019] The semiconductor laser element 20a among the plurality of semiconductor laser elements 20 is For example, the semiconductor laser element 20a is aligned with the optical axis L of the lens 30. , when viewed from the Z-axis direction, the semiconductor laser element 20a has a shape such as It is provided at the center of the plurality of semiconductor laser elements 20.

[0020] The semiconductor laser element 20b of the plurality of semiconductor laser elements 20 is The semiconductor laser element 20b is provided on the outer periphery of the semiconductor laser element 20. The plurality of semiconductor laser elements 20b are arranged in a direction parallel to the Z axis. a, 20c, 20d, and 20e. The distance between the semiconductor laser element and the optical axis L is the same. The "distance" refers to the distance between the center of the semiconductor laser element and the optical axis L. The shape formed by the line segment connecting the centers of the semiconductor laser elements 20b is, for example, a regular hexagon. This allows light to be efficiently incident on the lens 30, which is circular when viewed from the Z-axis direction, for example. Although not shown, a line connecting the centers of adjacent semiconductor laser elements 20b can be formed. The shape formed by the line segments may be a regular polygon other than a regular hexagon, or a circle.

[0021] In the +Y-axis direction, the distance D1 between the semiconductor laser element 20a and the optical axis L is The distance D1 is smaller than the distance D2 between the laser element 20b and the optical axis L. is zero. The +Y axis direction is the first direction perpendicular to the optical axis L direction. The wavelength of the light emitted from the element 20b is equal to the wavelength of the light emitted from the semiconductor laser element 20a. The laser module 100 is designed to correct the monochromatic aberration of the lens 30. The wavelength of the light emitted from the semiconductor laser element 20b is then adjusted to the wavelength of the light emitted from the semiconductor laser element 20a. The wavelength of the light emitted from the

[0022] The semiconductor laser element 20c among the plurality of semiconductor laser elements 20 is a semiconductor laser It is provided between the element 20a and the semiconductor laser element 20b. The plurality of semiconductor laser elements 20c are arranged as follows when viewed from the Z-axis direction: The semiconductor laser elements 20a and 20d are surrounded by a plurality of semiconductor laser elements 20c. The distance between the optical axis L and the laser beam emitted from the semiconductor laser element 20c is the same. The wavelength of the light is longer than the wavelength of the light emitted from the semiconductor laser element 20a. The wavelength of the light emitted from the laser element 20b is shorter than that of the light emitted from the laser element 20b.

[0023] The semiconductor laser element 20d among the plurality of semiconductor laser elements 20 is a semiconductor laser It is provided between the element 20a and the semiconductor laser element 20c. The plurality of semiconductor laser elements 20d are arranged as follows when viewed from the Z-axis direction: The semiconductor laser element 20a is surrounded by a plurality of semiconductor laser elements 20d. The distances between the laser diodes 20d and 20e are the same. is longer than the wavelength of the light emitted from the semiconductor laser element 20a, and the It is shorter than the wavelength of the light emitted from 20c.

[0024] The semiconductor laser element 20e among the plurality of semiconductor laser elements 20 is a semiconductor laser It is provided between the semiconductor laser element 20b and the semiconductor laser element 20c. The plurality of semiconductor laser elements 20e are arranged as follows when viewed from the Z-axis direction: The semiconductor laser elements 20a, 20c, and 20d are surrounded by a plurality of semiconductor laser elements 2. The distance between the laser diode element 20e and the optical axis L is the same. The wavelength of the emitted light is longer than that of the light emitted from the semiconductor laser element 20c. It is shorter than the wavelength of the light emitted from the semiconductor laser element 20b.

[0025] As described above, in the case of the plurality of semiconductor laser elements 20, as the distance from the optical axis L increases, The wavelength of the emitted light becomes longer as the distance from the optical axis L increases. Alternatively, a plurality of semiconductor laser elements 20 may be actually driven to obtain a plurality of The wavelength may be adjusted so that the light from the semiconductor laser element 20 is focused on the lens 30. For example, after a laser module based on this embodiment is fabricated on a trial basis, the focal position After that, the semiconductor laser element 10 is adjusted based on the actual measurement. The laser module 100 is newly formed by mounting or monolithically forming the laser element 20. Good too.

[0026] FIG. 3 is a cross-sectional view schematically showing the semiconductor laser element 20. As shown in FIG.

[0027] As shown in FIG. 3, the semiconductor laser element 20 includes, for example, a first semiconductor layer 41 and a first gate electrode. a guide layer 42, a quantum well layer 43, a second guide layer 44, a second semiconductor layer 45, and a transparent substrate. 46, a first electrode 47, and a second electrode 48. The semiconductor laser element 20 has For example, photonic crystal surface emitting lasers (PCSELs) The plurality of semiconductor laser elements 20 are semiconductor laser elements 2 0a, 20b, 20c, 20d, and 20e are monolithically fabricated on the substrate 10. When a photonic crystal surface emitting laser is used as the semiconductor laser element, It becomes easier to create a holistic

[0028] The first semiconductor layer 41 is provided between the first electrode 47 and the first guide layer 42. The semiconductor layer 41 is a semiconductor layer of a first conductivity type. The first semiconductor layer 41 is, for example, a Mg-doped layer. It is a doped p-type semiconductor layer.

[0029] The first guide layer 42 is provided between the first semiconductor layer 41 and the quantum well layer 43. The first guide layer 42 is, for example, an i-type GaN layer that is not intentionally doped with impurities and an In The SL (Semiconductor Superlattice) structure is composed of a GaN layer. The number of GaN layers and InGaN layers that make up the guide layer 42 is not particularly limited.

[0030] An opening 50 is formed in the first guide layer 42. The opening 50 is, for example, a hole. The width of the opening 50 is, for example, 50 nm or more and 500 nm or less. There are multiple locations.

[0031] Here, FIG. 4 is a diagram schematically showing the opening 50. The plurality of openings 50 shown in FIG. As shown in the figure, the openings 5 ​​are arranged periodically when viewed from the Z-axis direction. The 0s are arranged in a square lattice pattern. Therefore, the coordinates of the entire opening 50 are specified by XY. This allows, for example, programming an electron beam lithography system to form the opening 50. The shape of the opening 50 is, for example, circular. In the illustrated example, the shape of the first guide layer 42 is When viewed from the Z-axis direction, the semiconductor layers 41 and 45, the guide layers 42 and 44, and the quantum wells The shape of the transparent layer 43 and the transparent substrate 46 may be a regular hexagon. FIG. 3 is a cross-sectional view taken along line III-III.

[0032] As shown in FIG. 3, the quantum well layer 43 is disposed between the first guide layer 42 and the second guide layer 44. The quantum well layer 43 generates light when a current is injected into it. The layer 43 includes, for example, a well layer and a barrier layer. The well layer is an i-type semiconductor layer that is not intentionally doped with impurities. The barrier layer is, for example, a GaN layer. The quantum well layer 43 is a well layer. The structure has an MQW (Multiple Quantum Well) structure consisting of a gate electrode and a barrier layer.

[0033] The number of well layers and barrier layers that make up the quantum well layer 43 is not particularly limited. For example, only one well layer may be provided. In this case, the quantum well layer 43 is S It has a QW (Single Quantum Well) structure.

[0034] The second guide layer 44 is provided between the quantum well layer 43 and the second semiconductor layer 45. The second guide layer 44 is, for example, an i-type GaN layer that is not intentionally doped with impurities and an In The SL structure is made up of the GaN layer constituting the second guide layer 44. The number of the InGaN layers is not particularly limited. 4 has the function of increasing the optical confinement coefficient of the semiconductor laser element 20. Although not shown, the plurality of openings 50 are not formed in the first guide layer 42, but in the second guide layer 43. It may be formed on the metal layer 44 .

[0035] The second semiconductor layer 45 is provided between the quantum well layer 43 and the transparent substrate 46. The conductor layer 45 is a semiconductor layer of a second conductivity type different from the first conductivity type. For example, it is a Si-doped n-type GaN layer. The layer 45 is a cladding layer that functions to confine light in the quantum well layer 43 .

[0036] In the semiconductor laser element 20, the p-type first semiconductor layer 41 is intentionally doped with impurities. The non-insulating i-type quantum well layer 43 and guide layers 42 and 44, and the n-type second semiconductor layer The first electrode 45 constitutes a pin diode. When a forward bias voltage of the pin diode is applied between the first electrode 7 and the second electrode 48, the quantum well A current is injected into the layer 43, causing recombination of electrons and holes in the quantum well layer 43. The light generated in the quantum well layer 43 propagates in the in-plane direction and emits a plurality of The photonic crystal effect of the opening 50 forms a standing wave, and the quantum well layer 43 The semiconductor laser element 20 receives the +1st order diffracted light and the - The first-order diffracted light is emitted as laser light.

[0037] 5 is a diagram showing a schematic view of the opening 50. For example, in FIG. 5 shows the opening 50 of the semiconductor laser element 20a, and FIG. 5 shows the opening 50 of the semiconductor laser element 20b. Shows.

[0038] As shown in FIGS. 4 and 5, the period T2 of the openings 50 of the semiconductor laser element 20b is This is longer than the period T1 of the openings 50 of the semiconductor laser element 20a. The wavelength of the light emitted from the semiconductor laser element 20b is then adjusted to the wavelength of the light emitted from the semiconductor laser element 20a. Although not shown, the wavelength of the light emitted from the semiconductor laser element can be made longer. The period of the openings 50 of the semiconductor laser 20c is longer than the period T1 and shorter than the period T2. The period of the openings 50 of the semiconductor laser element 20d is longer than the period T1, and The period of the openings 50 of the semiconductor laser element 20e is shorter than that of the semiconductor laser element 20a. It is longer than the period of the laser element 20c and shorter than the period T2.

[0039] The shape of the opening 50 as viewed in the Z-axis direction does not have to be circular. 6, the opening 50 may be an isosceles triangle as shown in FIG. In the example shown in FIG. The opening 50 is made up of a circular first portion 52 and an elliptical second portion 54. If the shape is as shown in Figures 6 and 7, it will be more efficient and effective than, for example, a circular shape. The light emission mode can be extracted in the Z-axis direction.

[0040] Furthermore, if the plurality of openings 50 are arranged periodically when viewed from the Z-axis direction, they form a square lattice. The plurality of openings 5 ​​may be arranged in a regular triangular lattice pattern as shown in FIG. If the 0's are arranged in a regular triangular lattice, when the shape of the semiconductor laser element 20 is a regular hexagon, The semiconductor laser elements 20 can be arranged in a finely spaced arrangement. The lattice shape is not limited to a rectangular lattice shape or a square lattice shape, but may be a regular hexagonal lattice shape, or as shown in FIG. , or a regular octagonal lattice pattern.

[0041] As shown in FIG. 3, the transparent substrate 46 is provided between the second semiconductor layer 45 and the second electrode 48. The transparent substrate 46 transmits the light generated in the quantum well layer 43. is, for example, an n-type semiconductor substrate doped with Si.

[0042] The first electrode 47 is provided on the side of the first semiconductor layer 41 opposite to the first guide layer . The first semiconductor layer 41 may be in ohmic contact with the first electrode 47. 7 is electrically connected to the first semiconductor layer 41. The first electrode 47 is, for example, The first electrode 47 is a quantum well layer. This is one of the electrodes for injecting current into the layer 43 .

[0043] As shown in FIG. 3, the second electrode 48 is provided on the transparent substrate 46 on the side opposite to the second semiconductor layer 45. The transparent substrate 46 may be in ohmic contact with the second electrode 48. The second electrode 48 is electrically connected to the second semiconductor layer 45 via the transparent substrate 46 . The second electrode 48 is formed by laminating, for example, a Cr layer, a Ni layer, and an Au layer in this order from the transparent substrate 46 side. The second electrode 48 is the other electrode for injecting a current into the quantum well layer 43. The second electrode 48 has a through hole 49 formed therein. The light generated in the quantum well layer 43 is It is injected through the through hole 49.

[0044] The method for manufacturing the semiconductor laser element 20 includes the steps of: forming the semiconductor layers 41 and 45, and the guide layers 42 and 44. The quantum well layer 43 is formed by, for example, MOCVD (Metal Organic Chemical Vapor Deposition). It is formed by epitaxial growth using methods such as the Molecular Beam Epitaxy (MBE) method. The opening 50 is formed by, for example, patterning the first guide layer 42 using an electron beam lithography system. The electrodes 47 and 48 are formed by sputtering, vacuum deposition, It is formed by a method such as CVD (Chemical Vapor Deposition). The laser element 20 is mounted on the junk substrate 10 with the first electrode 47 facing the substrate 10 shown in FIG. A s-down implementation will be implemented.

[0045] 1.1.3. Effects The laser module 100 includes a plurality of semiconductor laser elements 20 and a plurality of semiconductor lasers. and a lens (30) having a convex incident surface (32) that collects the light emitted from the laser element (20). In the +Y-axis direction, which is the first direction orthogonal to the optical axis L direction of the lens 30, a plurality of semiconductors a semiconductor laser element 20a (first semiconductor laser element) among the semiconductor laser elements 20; The distance D1 between the optical axis L of the lens 30 and the semiconductor laser elements 20b is The semiconductor laser element 20b (second semiconductor laser element) located in the +Y-axis direction of the semiconductor laser element 20a The distance D2 between the semiconductor laser element 20b and the optical axis L is smaller than the distance D2 between the semiconductor laser element 20b and the optical axis L. The wavelength of the light emitted from the semiconductor laser element 20a is longer than the wavelength of the light emitted from the semiconductor laser element 20b. stomach.

[0046] Therefore, in the laser module 100, the light emitted from the semiconductor laser element 20a The deviation between the focusing position of the light and the focusing position of the light emitted from the semiconductor laser element 20b is reduced. This allows, for example, the placement of multiple condenser lenses or the use of an aspherical lens as a condenser lens. Therefore, the monochromatic aberration of the lens 30 can be corrected without using a lens. Light from a plurality of semiconductor laser elements 20 can be focused onto one point without any complexity.

[0047] For example, as shown in FIG. 10, the laser beam emitted from a plurality of semiconductor laser elements 1020 When the wavelengths are the same, the light focusing position of the semiconductor laser element 1020 provided on the periphery is as follows: A semiconductor laser is provided in the center just before the entrance 1003 of the optical fiber 1002. The light condensing position of the element 1020 is the same as the light condensing position of the semiconductor laser element 1020 provided on the periphery. The optical fiber 1002 is closer to the entrance 1003 of the optical fiber 1002 than the optical position. Therefore, the light from the plurality of semiconductor laser elements 1020 is incident on the entrance 1003 of the laser diode 1001. The semiconductor laser elements 1020 are mounted on the substrate 1010. 10 is a diagram schematically showing a laser module according to a reference example.

[0048] In the laser module 100, among the plurality of semiconductor laser elements 20c, In the semiconductor laser device 20, a semiconductor laser element 20a is provided between the semiconductor laser element 20b. The wavelength of the light emitted from the semiconductor laser element 20c (third semiconductor laser element) is The wavelength of the light emitted from the semiconductor laser element 20b is longer than the wavelength of the light emitted from the semiconductor laser element 20a. Therefore, in the laser module 100, The focusing position of the light emitted from the semiconductor laser element 20a and the focusing position of the light emitted from the semiconductor laser element 20b are The deviation between the focusing position of the light and the focusing position of the light emitted from the semiconductor laser element 20c is reduced. It can be reduced.

[0049] In the laser module 100, each of the plurality of semiconductor laser elements 20 is a photonic Therefore, the laser module 100 is a photonic crystal surface emitting laser. The period of the periodic structure that exhibits the crystal effect is determined by the semiconductor laser element 20a and the semiconductor laser element 20b, the light waves emitted from the semiconductor laser elements 20a and 20b are The length can be adjusted.

[0050] In the laser module 100, when viewed from the direction of the optical axis L, a plurality of semiconductor laser elements 20 Each of the semiconductor lasers has a regular hexagonal shape. The semiconductor laser elements 20 can be formed into a honeycomb structure, and a plurality of semiconductor laser elements 20 can be precisely arranged.

[0051] In the laser module 100, when viewed from the direction of the optical axis L, a plurality of semiconductor laser elements 20 is provided inside the outer periphery of the lens 30. 0, the light emitted from the plurality of semiconductor laser elements 20 and incident on the lens 30 This reduces the amount of light emitted from the semiconductor laser elements 20. The light can be efficiently incident on the lens 30.

[0052] In the laser module 100, a substrate 10 supporting a plurality of semiconductor laser elements 20 is Therefore, the laser module 100 includes a plurality of semiconductor laser elements 20 and a laser The optical path length between the lens 30 and the semiconductor laser can be easily adjusted. The cooling element 20 can be easily cooled.

[0053] 1.2. Laser module modifications Next, a laser module according to a modification of the first embodiment will be described with reference to the drawings. FIG. 11 is a schematic diagram of a laser module 110 according to a modification of the first embodiment. 12 is a diagram showing a semiconductor of a laser module 110 according to a modification of the first embodiment. 1 is a diagram showing a schematic diagram of a solid laser element 20. FIG.

[0054] Hereinafter, in the laser module 110 according to the modified example of the first embodiment, Regarding components having the same functions as the components of the laser module 100 according to the embodiment are denoted by the same reference numerals, and detailed explanations thereof will be omitted.

[0055] In the above-described laser module 100, as shown in FIG. 2, a plurality of semiconductor laser elements The elements 20 were arranged in a regular triangular lattice pattern when viewed from the Z-axis direction.

[0056] In contrast, the laser module 110 has a plurality of semiconductor lasers as shown in FIG. The laser elements 20 are arranged in a square lattice pattern.

[0057] In the illustrated example, a plurality of semiconductor laser elements 20a are provided. The semiconductor laser elements 20a are arranged in the X-axis direction. The semiconductor laser elements 20c are arranged in the X-axis direction. The plurality of semiconductor laser elements 20d are arranged in the X-axis direction. The laser elements 20e are arranged in the X-axis direction.

[0058] The semiconductor laser elements 20 are arranged in a plurality of rows 22 along the Y axis. In this example, eight columns 22 are provided. One column 22 corresponds to, for example, one semiconductor laser. Two semiconductor laser elements 20a, two semiconductor laser elements 20b, and two semiconductor laser elements 20 c, two semiconductor laser elements 20d, and two semiconductor laser elements 20e. It has been done.

[0059] In the laser module 110, as shown in FIG. 11, the lens 30 is a cylindrical As shown in FIG. 12, the optical axes L of the lenses 30 are arranged in a plurality of positions along the X axis. are.

[0060] Although not shown in the figure, a plurality of optical fibers 2 are provided corresponding to the rows 22. For example, eight optical fibers 2 are provided. The optical fibers 2 are arranged in the X-axis direction. For example, the laser beam is emitted from the row 22 located furthest in the +X-axis direction among the multiple rows 22. The light is incident on the optical fiber 2 located furthest in the +X-axis direction among the multiple optical fibers 2. The light emitted from the second row 22 located in the +X-axis direction among the plurality of rows 22 is The light is incident on the second optical fiber 2 located in the +X-axis direction among the optical fibers 2. As shown, the light emitted from the plurality of rows 22 enters the corresponding optical fibers 2, respectively.

[0061] In the laser module 110, similar to the laser module 100, a semiconductor laser The focusing position of the light emitted from the element 20a and the focusing position of the light emitted from the semiconductor laser element 20b This can reduce the deviation between the focusing position of and .

[0062] 2. Second embodiment Next, a laser module according to a second embodiment will be described with reference to the drawings. FIG. 13 is a diagram schematically illustrating a laser module 200 according to the second embodiment.

[0063] Hereinafter, in the laser module 200 according to the modified example of the second embodiment, Regarding components having the same functions as the components of the laser module 100 according to the embodiment are denoted by the same reference numerals, and detailed explanations thereof will be omitted.

[0064] In the above-described laser module 100, as shown in FIG. 1, the lens 30 is a convex lens. It was.

[0065] In contrast, in the laser module 200, as shown in FIG. 13, the lens 30 is a concave The lens 30 has an entrance surface 32 and an exit surface 34 that are concave. The curvature of the incident surface 32 is larger than that of the exit surface 34. The curvature of the exit surface 32 may be less than the curvature of the exit surface 34 .

[0066] In the laser module 200, the wavelength of the light emitted from the semiconductor laser element 20b is , which is shorter than the wavelength of the light emitted from the semiconductor laser element 20a. The wavelength of the light emitted from the semiconductor laser element 20c is and is longer than the wavelength of the light emitted from the semiconductor laser element 20b. The wavelength of the light emitted from the element 20d is equal to the wavelength of the light emitted from the semiconductor laser element 20a. The wavelength is shorter than the wavelength of the light emitted from the semiconductor laser element 20c. The wavelength of the light emitted from the semiconductor laser element 20e is equal to the wavelength of the light emitted from the semiconductor laser element 20c. It is shorter than the wavelength of light and longer than the wavelength of light emitted from the semiconductor laser element 20d. As shown, in the case of the plurality of semiconductor laser elements 20, as the distance from the optical axis L increases, , the wavelength of the emitted light becomes shorter.

[0067] In the laser module 200, similar to the laser module 100, a semiconductor laser The focusing position of the light emitted from the element 20a and the focusing position of the light emitted from the semiconductor laser element 20b This can reduce the deviation between the focusing position of and .

[0068] 3. Third embodiment Next, a laser processing machine according to a third embodiment will be described with reference to the drawings. 15 is a diagram schematically showing a laser processing machine 300 according to the third embodiment.

[0069] As shown in FIG. 15, the laser processing machine 300 includes, for example, a laser module 100 and , an optical fiber 2 and a processing head 4 .

[0070] The laser processing machine 300 processes the workpiece W. Specifically, the laser processing machine 30 0 is a diagram showing the state where the processing head 4 is moved relative to the workpiece W, and the light is emitted from the processing head 4. The processing head 4 is provided with lenses 6 and 8. 6 and 8 collect the light emitted from the optical fiber 2 and guide it to the workpiece W. The material of W is not particularly limited, and may be metal, resin, or ceramic. It may also be a

[0071] The use of the laser processing machine according to the present invention is not particularly limited. -The processing machine is a processing machine for cutting the workpiece W or drilling holes in the workpiece W. Furthermore, the laser processing machine according to the present invention can remove rust from metal, for example. It may be a laser cleaner that removes the surface with laser light, or a cleaner that cleans the surface of metal or resin. It can be a laser annealing device that heats with laser light, or a 3D printer. It's okay to have one.

[0072] The above-described embodiment and modifications are merely examples, and the present invention is not limited to these. For example, it is possible to combine the respective embodiments and modifications as appropriate.

[0073] The present invention has substantially the same configuration as the configuration described in the embodiment, for example, functions, methods, and the like. The present invention also includes configurations with the same purpose and effect as those described above. The present invention also includes configurations in which non-essential parts of the configurations described in the embodiments are replaced. A configuration that has the same effect as the configuration described in the embodiment or achieves the same purpose. The present invention also includes a configuration in which known technology is added to the configuration described in the embodiment. This includes the configuration.

[0074] The following can be derived from the above-described embodiment and modifications.

[0075] One aspect of the laser module is A plurality of semiconductor laser elements; A lens having a convex incident surface that collects the light emitted from the plurality of semiconductor laser elements. and, Including, In a first direction perpendicular to the optical axis direction of the lens, The distance between the first semiconductor laser element and the optical axis of the lens is the distance between the second semiconductor laser element and the optical axis is shorter than the distance between the second semiconductor laser element and the optical axis, The wavelength of the light emitted from the second semiconductor laser element is equal to or larger than the wavelength of the light emitted from the first semiconductor laser element. longer than the wavelength of light emitted from

[0076] According to this laser module, the focusing position of the light emitted from the first semiconductor laser element is This can reduce the deviation between the position of the first semiconductor laser element and the position at which the light emitted from the second semiconductor laser element is focused.

[0077] One aspect of the laser module is A plurality of semiconductor laser elements; A lens having a concave incident surface that collects the light emitted from the plurality of semiconductor laser elements. and, Including, In a first direction perpendicular to the optical axis direction of the lens, The distance between the first semiconductor laser element and the optical axis of the lens is the distance between the second semiconductor laser element and the optical axis is shorter than the distance between the second semiconductor laser element and the optical axis, The wavelength of the light emitted from the second semiconductor laser element is equal to or larger than the wavelength of the light emitted from the first semiconductor laser element. shorter than the wavelength of light emitted from

[0078] According to this laser module, the focusing position of the light emitted from the first semiconductor laser element is This can reduce the deviation between the position of the first semiconductor laser element and the position at which the light emitted from the second semiconductor laser element is focused.

[0079] In one embodiment of the laser module, In the first direction, a third semiconductor laser element among the plurality of semiconductor laser elements a laser diode is provided between the first semiconductor laser element and the second semiconductor laser element, The wavelength of the light emitted from the third semiconductor laser element is equal to or larger than the wavelength of the light emitted from the first semiconductor laser element. the wavelength of the light emitted from the second semiconductor laser element is longer than the wavelength of the light emitted from the second semiconductor laser element. It may be shorter than long.

[0080] According to this laser module, the focusing position of the light emitted from the first semiconductor laser element is a focusing position of the light emitted from the second semiconductor laser element; and a focusing position of the light emitted from the third semiconductor laser element. This reduces the deviation between the focusing position of the light emitted from the

[0081] In one embodiment of the laser module, In the first direction, a third semiconductor laser element among the plurality of semiconductor laser elements a laser diode is provided between the first semiconductor laser element and the second semiconductor laser element, The wavelength of the light emitted from the third semiconductor laser element is equal to or larger than the wavelength of the light emitted from the first semiconductor laser element. the wavelength of the light emitted from the second semiconductor laser element is shorter than the wavelength of the light emitted from the second semiconductor laser element. It may be longer than long.

[0082] According to this laser module, the focusing position of the light emitted from the first semiconductor laser element is a focusing position of the light emitted from the second semiconductor laser element; and a focusing position of the light emitted from the third semiconductor laser element. This reduces the deviation between the focusing position of the light emitted from the

[0083] In one embodiment of the laser module, Each of the plurality of semiconductor laser elements may be a photonic crystal surface emitting laser. good.

[0084] This laser module allows the period of the periodic structure that produces the photonic crystal effect to be , by changing the first semiconductor laser element and the second semiconductor laser element, The wavelengths of the light emitted from the laser element and the second semiconductor laser element can be adjusted.

[0085] In one embodiment of the laser module, When viewed from the optical axis direction, each of the plurality of semiconductor laser elements has a regular hexagonal shape. It is also possible.

[0086] According to this laser module, multiple semiconductor laser elements are arranged in a honeycomb structure. This allows a plurality of semiconductor laser elements to be arranged closely together.

[0087] In one embodiment of the laser module, When viewed from the optical axis direction, the plurality of semiconductor laser elements are positioned inside the outer periphery of the lens. It may be provided on the side.

[0088] According to this laser module, light emitted from a plurality of semiconductor laser elements This reduces the amount of light that does not enter the lens.

[0089] In one embodiment of the laser module, The laser diode may include a substrate that supports the plurality of semiconductor laser elements.

[0090] According to this laser module, the light between the plurality of semiconductor laser elements and the lens is The path length can be easily adjusted.

[0091] One aspect of the laser processing machine is Includes laser module. [Explanation of symbols]

[0092] 2...optical fiber, 3...inlet port, 4...processing head, 6, 8...lenses, 10...substrate, 12... Plane, 20, 20a, 20b, 20c, 20d, 20e...semiconductor laser elements, 22...row , 30... lens, 32... incident surface, 34... exit surface, 41... first semiconductor layer, 42... first guide layer, 43... quantum well layer, 44... second guide layer, 45... second semiconductor layer, 46... transparent substrate, 4 7...first electrode, 48...second electrode, 49...through hole, 50...opening, 52...first part, 54... Second part, 100, 110, 200... laser module, 300... laser processing machine, 1 002...optical fiber, 1003...incident port, 1010...substrate, 1020...semiconductor laser Element, 1030...lens

Claims

1. A plurality of semiconductor laser elements; A lens having a convex incident surface that collects the light emitted from the plurality of semiconductor laser elements. and, Including, In a first direction perpendicular to the optical axis direction of the lens, The distance between the first semiconductor laser element and the optical axis of the lens is the distance between the second semiconductor laser element and the optical axis is shorter than the distance between the second semiconductor laser element and the optical axis, The wavelength of the light emitted from the second semiconductor laser element is equal to or larger than the wavelength of the light emitted from the first semiconductor laser element. The wavelength of the light emitted from the laser module is longer than the wavelength of the light emitted from the laser module.

2. A plurality of semiconductor laser elements; A lens having a concave incident surface that collects the light emitted from the plurality of semiconductor laser elements. and, Including, In a first direction perpendicular to the optical axis direction of the lens, The distance between the first semiconductor laser element and the optical axis of the lens is the distance between the second semiconductor laser element and the optical axis is shorter than the distance between the second semiconductor laser element and the optical axis, The wavelength of the light emitted from the second semiconductor laser element is equal to or larger than the wavelength of the light emitted from the first semiconductor laser element. The wavelength of the light emitted from the laser module is shorter than that of the laser itself.

3. In claim 1, In the first direction, a third semiconductor laser element among the plurality of semiconductor laser elements a laser diode is provided between the first semiconductor laser element and the second semiconductor laser element, The wavelength of the light emitted from the third semiconductor laser element is equal to or larger than the wavelength of the light emitted from the first semiconductor laser element. the wavelength of the light emitted from the second semiconductor laser element is longer than the wavelength of the light emitted from the second semiconductor laser element. Shorter than long, laser module.

4. In claim 2, In the first direction, a third semiconductor laser element among the plurality of semiconductor laser elements a laser diode is provided between the first semiconductor laser element and the second semiconductor laser element, The wavelength of the light emitted from the third semiconductor laser element is equal to or larger than the wavelength of the light emitted from the first semiconductor laser element. the wavelength of the light emitted from the second semiconductor laser element is shorter than the wavelength of the light emitted from the second semiconductor laser element. Longer than the laser module.

5. In claim 1 or 2, Each of the plurality of semiconductor laser elements is a photonic crystal surface emitting laser. User module.

6. In claim 1 or 2, When viewed from the optical axis direction, each of the plurality of semiconductor laser elements has a regular hexagonal shape. Laser module.

7. In claim 1 or 2, When viewed from the optical axis direction, the plurality of semiconductor laser elements are positioned inside the outer periphery of the lens. The laser module is located on the side.

8. In claim 1 or 2, a laser module including a substrate supporting the plurality of semiconductor laser elements;

9. A laser processing machine comprising the laser module according to claim 1 or 2.

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