Method of manufacturing light emitting device

Abstract

To provide a method of manufacturing a light emitting device capable of reducing the occurrence of a cutting failure.SOLUTION: The method of manufacturing a light emitting device includes first to eighth steps. In the first step, a structure including a first substrate, a plurality of light-emitting parts, a metal layer, and a protective member is provided. The metal layer is disposed on the upper surface side of the first substrate and covers at least the plurality of light-emitting units. The protective member covers the metal layer. In the second step, a second substrate is bonded onto the protective member. In the third step, the lower surfaces of the plurality of light-emitting units are exposed by removing the first substrate. In the fourth step, the light-transmissive member is bonded to the lower surfaces of the plurality of light-emitting parts via the bonding member. In the fifth step, the second substrate is removed. In the sixth step, a portion of the bonding member located between the plurality of light-emitting portions and the protective member are removed using the metal layer as a mask to form an exposed portion where the light-transmissive member is exposed from the bonding member. In the seventh step, the metal layer is removed. In the eighth step, the light-transmissive member is singulated by cleaving the light-transmissive member at the positions of the exposed portions.SELECTED DRAWING: Figure 3

Description

[Technical Field]

[0001] The embodiment relates to a method for manufacturing a light emitting device. [Background technology]

[0002] Patent Document 1 proposes a light emitting device in which a structure in which a plurality of light emitting units are arranged and a light-transmitting member are joined via a joining member. In a method for manufacturing such a light emitting device, if the joining member is arranged at a position where the light-transmitting member is to be split, splitting defects are likely to occur. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2016-149389 Summary of the Invention [Problem to be solved by the invention]

[0004] The embodiment aims to provide a method for manufacturing a light emitting device that can reduce the occurrence of defective cutting. [Means for solving the problem]

[0005] A method for manufacturing a light emitting device according to one embodiment of the present invention includes first to eighth steps. In the first step, a structure is prepared. The structure includes a first substrate, a plurality of light emitting units, a metal layer, and a protective member. The light emitting units are arranged spaced apart on the upper surface of the first substrate. The metal layer is disposed on the upper surface of the first substrate. The metal layer covers at least the light emitting units. The protective member covers the metal layer. In the second step, a second substrate is bonded onto the protective member. In the third step, the first substrate is removed to expose the lower surfaces of the light emitting units. In the fourth step, a light-transmitting member is bonded to the lower surfaces of the light emitting units via a bonding member. In the fifth step, the second substrate is removed. In the sixth step, the metal layer is used as a mask to remove the protective member and portions of the bonding member located between the light emitting units, thereby forming exposed portions where the light-transmitting member is exposed from the bonding member. In the seventh step, the metal layer is removed. In the eighth step, the light-transmitting member is cut at the positions of the exposed portions to separate the light-transmitting member. [Effects of the Invention]

[0006] According to one embodiment of the present invention, a method for manufacturing a light emitting device that can reduce the occurrence of defective cutting can be achieved. [Brief explanation of the drawings]

[0007] [Figure 1] FIG. 2 is a plan view illustrating a first step of a method for manufacturing a light emitting device according to the embodiment. [Figure 2] 3A to 3C are cross-sectional views illustrating a first step in a method for manufacturing a light emitting device according to an embodiment. [Figure 3] 3A to 3C are cross-sectional views illustrating a first step in a method for manufacturing a light emitting device according to an embodiment. [Figure 4] 3A to 3C are cross-sectional views illustrating a first step in a method for manufacturing a light emitting device according to an embodiment. [Figure 5] 5A and 5B are cross-sectional views illustrating a second step in the method for manufacturing the light emitting device according to the embodiment. [Figure 6]5A and 5B are cross-sectional views illustrating a third step in the method for manufacturing the light emitting device according to the embodiment. [Figure 7] 5A and 5B are cross-sectional views illustrating a third step in the method for manufacturing the light emitting device according to the embodiment. [Figure 8] 10 is a cross-sectional view illustrating a fourth step in the method for manufacturing the light emitting device according to the embodiment. FIG. [Figure 9] 10 is a cross-sectional view illustrating a fourth step in the method for manufacturing the light emitting device according to the embodiment. FIG. [Figure 10] FIG. 10 is a plan view illustrating a fourth step in the method for manufacturing the light emitting device according to the embodiment. [Figure 11] FIG. 10 is a plan view illustrating a fourth step in the method for manufacturing the light emitting device according to the embodiment. [Figure 12] 10 is a cross-sectional view illustrating a fourth step in the method for manufacturing the light emitting device according to the embodiment. FIG. [Figure 13] 10 is a cross-sectional view illustrating a fifth step of the method for manufacturing the light emitting device according to the embodiment. [Figure 14] FIG. 10 is a cross-sectional view illustrating a sixth step of the method for manufacturing the light emitting device according to the embodiment. [Figure 15] FIG. 10 is a cross-sectional view illustrating a sixth step of the method for manufacturing the light emitting device according to the embodiment. [Figure 16] 10 is a cross-sectional view illustrating a seventh step of the method for manufacturing the light emitting device according to the embodiment. FIG. [Figure 17] FIG. 10 is a cross-sectional view illustrating an eighth step of the method for manufacturing the light emitting device according to the embodiment. [Figure 18] FIG. 10 is a cross-sectional view illustrating an eighth step of the method for manufacturing the light emitting device according to the embodiment. [Figure 19] FIG. 10 is a cross-sectional view illustrating an eighth step of the method for manufacturing the light emitting device according to the embodiment. [Figure 20] FIG. 2 is a cross-sectional view illustrating a light source according to the embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0008] Hereinafter, embodiments of the present invention will be described with reference to the drawings. The drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the size ratio between parts, etc. are not necessarily the same as those in reality. Even when the same part is shown, the dimensions and ratios may be different depending on the drawing. In the present specification and the drawings, elements similar to those already explained are given the same reference numerals and detailed explanations will be omitted as appropriate.

[0009] For ease of explanation, the following description will use an XYZ Cartesian coordinate system to explain the arrangement and configuration of each part. The X-axis, Y-axis, and Z-axis are perpendicular to one another. The direction in which the X-axis extends will be referred to as the "X direction," the direction in which the Y-axis extends will be referred to as the "Y direction," and the direction in which the Z-axis extends will be referred to as the "Z direction." For ease of explanation, the direction of the arrow in the Z direction will be referred to as upward and the opposite direction will be referred to as downward, but these directions are unrelated to the direction of gravity. Viewing from above downward will be referred to as a "planar view."

[0010] <Method of manufacturing a light-emitting device> FIG. 1 is a plan view showing a first step of a method for manufacturing a light emitting device according to an embodiment. 2 to 4 are cross-sectional views illustrating a first step of the method for manufacturing the light emitting device according to the embodiment. FIG. 5 is a cross-sectional view showing a second step of the method for manufacturing the light emitting device according to the embodiment. 6 and 7 are cross-sectional views illustrating a third step in the method for manufacturing the light emitting device according to the embodiment. 8, 9, and 12 are cross-sectional views showing a fourth step of the method for manufacturing the light emitting device according to the embodiment. 10 and 11 are plan views showing a fourth step of the method for manufacturing the light emitting device according to the embodiment. FIG. 13 is a cross-sectional view illustrating a fifth step of the method for manufacturing the light emitting device according to the embodiment. 14 and 15 are cross-sectional views illustrating a sixth step of the method for manufacturing the light emitting device according to the embodiment. FIG. 16 is a cross-sectional view illustrating a seventh step of the method for manufacturing the light emitting device according to the embodiment. 17 to 19 are cross-sectional views illustrating an eighth step of the method for manufacturing the light emitting device according to the embodiment. 2 to 9 and 12 to 19 show cross sections taken along line II-II in FIG. 1 to 19, the method for manufacturing a light emitting device according to the embodiment includes steps 1 to 8. Steps 1 to 8 are performed in the order of step 1, step 2, step 3, step 4, step 5, step 6, step 7, and step 8.

[0011] As shown in FIGS. 1 to 4, in the first step, a structure 5 is prepared. The structure 5 has a first substrate 10, a plurality of light-emitting sections 20, a metal layer 30, and a protective member 40. The plurality of light-emitting sections 20 are arranged on the upper surface 10a of the first substrate 10. The plurality of light-emitting sections 20 are spaced apart from one another. The metal layer 30 is arranged on the upper surface 10a side of the first substrate 10. The metal layer 30 covers at least the plurality of light-emitting sections 20. The protective member 40 covers the metal layer 30. The structure 5 may be prepared by purchasing it.

[0012] As shown in FIGS. 1 and 2 , in the first step, a plurality of light-emitting units 20 are arranged on the upper surface 10a of the first substrate 10 so as to be spaced apart from one another. For example, after forming one semiconductor unit on the upper surface 10a of the first substrate 10, the semiconductor unit is partially removed to separate it into a plurality of light-emitting units 20, thereby arranging the plurality of light-emitting units 20 on the upper surface 10a of the first substrate 10. The semiconductor unit can be formed, for example, by metal-organic chemical vapor deposition (MOCVD). For example, a portion of the semiconductor unit is covered with photoresist, and the semiconductor unit not covered by the photoresist is removed. The semiconductor unit is removed, for example, by dry etching such as reactive ion etching (RIE). The plurality of light-emitting units 20 are arranged so that the distance D between adjacent light-emitting units 20 is, for example, 5 μm or more and 30 μm or less. Note that the plurality of light-emitting units 20 do not have to be spaced apart from one another. For example, the plurality of light-emitting units 20 may be connected by a portion of the semiconductor unit.

[0013] Each of the plurality of light-emitting sections 20 has an upper surface 20a, a lower surface 20b, and a side surface 20c. The side surface 20c connects the upper surface 20a and the lower surface 20b. Each of the plurality of light-emitting sections 20 has a semiconductor laminate 21 and an electrode 22. The upper surface of the semiconductor laminate 21 and the upper surface of the electrode 22 form the upper surface 20a of each light-emitting section 20. The lower surface of the semiconductor laminate 21 forms the lower surface 20b of each light-emitting section 20. The side surface of the semiconductor laminate 21 forms the side surface 20c of each light-emitting section 20. The shape of one light-emitting section 20 in a top view is, for example, rectangular. When the shape of the light-emitting section 20 in a top view is rectangular, the length of one side of the light-emitting section 20 is, for example, 5 μm or more and 2000 μm or less.

[0014] For example, a plurality of convex portions are formed on the upper surface 10a of the first substrate 10. Concave portions corresponding to the convex portions on the upper surface 10a of the first substrate 10 are formed on the lower surfaces 20b of the plurality of light-emitting units 20. The upper surface 10a of the first substrate 10 does not necessarily have to have a plurality of convex portions formed thereon.

[0015] The first substrate 10 is, for example, a growth substrate used when forming the semiconductor laminate 21. The first substrate 10 includes, for example, at least one of sapphire, GaN, and silicon. The first substrate 10 is, for example, a sapphire substrate. The thickness of the first substrate 10 is, for example, not less than 100 μm and not more than 1000 μm. The electrode 22 includes, for example, at least one metal selected from titanium (Ti), rhodium (Rh), gold (Au), platinum (Pt), ruthenium (Ru), and aluminum (Al). The electrode 22 may have a single-layer structure or a multi-layer structure stacked in the Z direction.

[0016] The semiconductor laminate 21 has a p-type semiconductor layer, an active layer, and an n-type semiconductor layer. The active layer is located between the p-type semiconductor layer and the n-type semiconductor layer. The p-type semiconductor layer, the active layer, and the n-type semiconductor layer are each made of, for example, a nitride semiconductor. In this specification, the term "nitride semiconductor" refers to, for example, In x Al y Ga 1-x-yThe term "nitride semiconductor" includes all semiconductors with compositions in which the composition ratios x and y in the chemical formula N (0≦x≦1, 0≦y≦1, x+y≦1) are varied within their respective ranges. In addition, the term "nitride semiconductor" also includes semiconductors with the above chemical formula that further contain Group V elements other than N (nitrogen), and semiconductors that further contain various elements added to control various physical properties such as conductivity type.

[0017] The n-type semiconductor layer contains, for example, Si (silicon) as an n-type impurity. The p-type semiconductor layer contains, for example, Mg (magnesium) as a p-type impurity. The active layer is a light-emitting layer that emits light, and has, for example, an MQW (multiple quantum well) structure including multiple barrier layers and multiple well layers. The peak wavelength of the light emitted by the active layer is, for example, 210 nm or more and 580 nm or less.

[0018] As shown in FIG. 3 , in the first step, a metal layer 30 is disposed on the upper surface 10a of the first substrate 10. The metal layer 30 covers at least the plurality of light-emitting units 20. The metal layer 30 covers at least the upper surfaces 20a and side surfaces 20c of the plurality of light-emitting units 20. The metal layer 30 is formed, for example, along the upper surfaces 20a and side surfaces 20c of the plurality of light-emitting units 20. In the example of FIG. 3 , the metal layer 30 does not cover the upper surface 10a of the first substrate 10. The metal layer 30 may cover the upper surface 10a of the first substrate 10. The metal layer 30 can be formed, for example, by a vapor deposition method or a sputtering method. For example, in a state where a portion of the upper surface 10a of the first substrate 10 is covered with photoresist, the metal layer 30 is formed on the portion not covered by the photoresist. This allows the metal layer 30 to be formed so as not to cover the upper surface 10a of the first substrate 10 but to cover the plurality of light-emitting units 20. The metal layer 30 contains, for example, chromium (Cr). The thickness of the metal layer 30 is, for example, not less than 0.01 μm and not more than 1 μm.

[0019] As shown in FIG. 4, in the first step, a protective member 40 is then disposed on the upper surface 10a of the first substrate 10. The protective member 40 covers at least the metal layer 30. A portion of the protective member 40 is located between the plurality of light-emitting units 20. In the example of FIG. 4, the protective member 40 covers the upper surface 10a of the first substrate 10. The protective member 40 does not have to cover the upper surface 10a of the first substrate 10. The protective member 40 is formed, for example, by disposing the protective member 40 so as to cover the plurality of light-emitting units 20 disposed on the upper surface 10a of the first substrate 10, and then flattening the surface opposite the first substrate 10. The protective member 40 includes, for example, a photosensitive adhesive. The protective member 40 may have a single-layer structure or a multi-layer structure stacked in the Z direction.

[0020] As shown in FIG. 5, in the second step, the second substrate 50 is bonded onto the protective member 40. In the example of FIG. 5, the second substrate 50 is bonded to the upper surface 40a of the protective member 40. The second substrate 50 and the protective member 40 are bonded together using, for example, an adhesive resin such as polyimide resin. The second substrate 50 functions as a support substrate for supporting the plurality of light-emitting units 20, the metal layer 30, and the protective member 40 after the first substrate 10 is removed. The second substrate 50 includes, for example, at least one of sapphire and glass. The second substrate 50 is, for example, a sapphire substrate.

[0021] As shown in FIG. 6, in the third step, the first substrate 10 is removed to expose the lower surfaces 20b of the plurality of light-emitting units 20. In the example of FIG. 6, the first substrate 10 is removed to expose the lower surfaces 20b of the plurality of light-emitting units 20 and the lower surface 40b of the protective member 40. The first substrate 10 is removed by, for example, laser lift-off (LLO). After the first substrate 10 is removed, shapes corresponding to the convex portions on the upper surface 10a of the first substrate 10 are formed on the lower surfaces 20b of the plurality of light-emitting units 20 and the lower surface 40b of the protective member 40.

[0022] As shown in FIG. 7 , in the third step, after removing the first substrate 10, the lower surfaces 20 b of the plurality of light-emitting units 20 may be planarized. In the example of FIG. 7 , the lower surfaces 20 b of the plurality of light-emitting units 20 and the lower surface 40 b of the protective member 40 are planarized. Note that "planarization" refers to a process for reducing surface roughness. In other words, the surface roughness of the lower surfaces 20 b of the plurality of light-emitting units 20 after planarization is smaller than the surface roughness of the lower surfaces 20 b of the plurality of light-emitting units 20 before planarization. The planarization is performed, for example, by chemical mechanical polishing (CMP). In the third step, the lower surfaces 20 b of the plurality of light-emitting units 20 and the lower surface 40 b of the protective member 40 do not need to be planarized. Note that if the plurality of light-emitting units 20 are not separated from each other but are connected by a portion of the semiconductor portion, the plurality of light-emitting units 20 are separated from each other by removing a portion of the semiconductor portion during planarization.

[0023] As shown in FIG. 8 , in the fourth step, first, the lower surfaces 20b of the plurality of light-emitting units 20 are roughened. In the example of FIG. 8 , when the lower surfaces 20b of the plurality of light-emitting units 20 are roughened, the lower surface 40b of the protective member 40 is not roughened. Note that "roughening" refers to a process for increasing surface roughness. In other words, the surface roughness of the lower surfaces 20b of the plurality of light-emitting units 20 after roughening is greater than the surface roughness of the lower surfaces 20b of the plurality of light-emitting units 20 before roughening. The roughening of the lower surfaces 20b of the light-emitting units 20 is performed, for example, by wet etching using a strong alkaline agent. The strong alkaline agent includes, for example, tetramethylammonium hydroxide (TMAH). The roughening of the lower surfaces 20b of the plurality of light-emitting units 20 is performed before bonding the light-transmitting member 70 via the bonding member 60. Because the etching rate of the protective member 40 with respect to a strongly alkaline agent such as TMAH is low, the lower surface 40b of the protective member 40 is unlikely to be roughened, whereas the lower surfaces 20b of the plurality of light-emitting units 20 are likely to be roughened. In the fourth step, roughening of the lower surfaces 20b of the plurality of light-emitting units 20 does not have to be performed. Note that, if planarization is not performed in the third step and recesses corresponding to the protrusions on the upper surface 10a of the first substrate 10 are formed on the lower surfaces 20b of the light-emitting units 20, roughening the lower surfaces 20b of the light-emitting units 20 forms a rough surface on the surface including the recesses on the lower surfaces 20b of the light-emitting units 20.

[0024] As shown in FIGS. 9 to 11 , in the fourth step, grooves 45 are formed in the protective member 40 by continuously removing portions of the protective member 40 that do not overlap with the light-emitting units 20 in a plan view. In the example of FIG. 9 , the grooves 45 reach the second substrate 50. The grooves 45 do not necessarily have to reach the second substrate 50. The protective member 40 is removed by dry etching using oxygen gas, for example. FIG. 10 shows the state before the grooves 45 are formed, and FIG. 11 shows the state after the grooves 45 are formed. In FIGS. 10 and 11 , the area where the protective member 40 is disposed is indicated by hatching. In the examples of FIGS. 10 and 11 , the grooves 45 are formed between adjacent light-emitting units 20, and one protective member 40 is disposed for each light-emitting unit 20. The formation of the grooves 45 may not be performed in the fourth step. For example, if no gas is generated when the bonding member 60 is cured, the formation of the grooves 45 may not be performed.

[0025] As shown in FIG. 12 , in the fourth step, the light-transmitting member 70 is bonded to the lower surfaces 20b of the light-emitting units 20 via the bonding member 60. More specifically, first, the material of the bonding member 60 before curing is applied to the light-transmitting member 70 to form a layer of the bonding member 60 before curing. Next, the lower surfaces 20b of the light-emitting units 20 are pressed against the layer of the bonding member 60 before curing, thereby embedding the lower portions of the light-emitting units 20 into the layer of the bonding member 60 before curing. Next, while the lower surfaces 20b of the light-emitting units 20 are pressed against the bonding member 60 before curing, the bonding member 60 before curing is heated to harden the material of the bonding member 60 and bond the light-transmitting member 70 to the lower surfaces 20b of the light-emitting units 20. The material of the bonding member 60 includes, for example, polysilazane. The Si-O bond contained in the bonding member 60 after curing is higher than that of the bonding member 60 before curing. The thickness of the bonding member 60 is, for example, 4 μm to 6 μm. The light-transmitting member 70 includes, for example, at least one of resin and glass. The light-transmitting member 70 may include a phosphor. The phosphor is, for example, an yttrium-aluminum-garnet phosphor (for example, Y3(Al,Ga)5O 12The light-transmitting member 70 may include at least one of nitride-based phosphors such as (Si,Al)3(O,N)4:Eu), β-sialon-based phosphors (e.g., (Si,Al)3(O,N)4:Eu), CASN-based phosphors (e.g., CaAlSiN3:Eu) or SCASN-based phosphors (e.g., (Sr,Ca)AlSiN3:Eu), and fluoride-based phosphors such as KSF-based phosphors (e.g., K2SiF6:Mn) and KSAF-based phosphors (e.g., K2(Si,Al)F6:Mn). The light-transmitting member 70 may be a sintered body obtained by sintering a phosphor. The thickness of the light-transmitting member 70 is, for example, smaller than the thickness of the first substrate 10. The thickness of the light-transmitting member 70 is, for example, 50 μm or more and 200 μm or less.

[0026] 13, in the fifth step, the second substrate 50 is removed. In the example of Fig. 13, the upper surface 40a of the protective member 40 is exposed by removing the second substrate 50. The second substrate 50 is removed by, for example, laser lift-off (LLO).

[0027] 14, in the sixth step, first, the protective member 40 is removed using the metal layer 30 as a mask. The protective member 40 is removed by, for example, reactive ion etching using a fluorine-based gas. The fluorine-based gas includes, for example, at least one of CF4, CHF3, C4F8, and SF6. The protective member 40 may be removed by, for example, using a chemical capable of peeling off the protective member 40.

[0028] 15 , in the sixth step, the metal layer 30 is then used as a mask to remove portions of the bonding member 60 that are located between the plurality of light-emitting units 20, thereby forming exposed portions 72 where the light-transmitting member 70 is exposed from the bonding member 60. The bonding member 60 is removed by, for example, reactive ion etching using a fluorine-based gas. The protective member 40 and the bonding member 60 may be removed at the same time by reactive ion etching using a fluorine-based gas.

[0029] 16, in the seventh step, the metal layer 30 is removed. The metal layer 30 is removed by, for example, wet etching using a chemical capable of etching the metal layer 30. When the metal layer 30 contains chromium, the metal layer 30 is removed by, for example, wet etching using a chemical containing nitric acid.

[0030] As shown in FIG. 17 , in the eighth step, first, modified regions 75 are formed inside the light-transmitting member 70 by irradiating the exposed portions 72 with laser light LL. By irradiating the exposed portions 72 located between the plurality of light-emitting units 20 with laser light LL, a plurality of modified regions 75 are formed at positions overlapping with the exposed portions 72. The modified regions 75 are formed, for example, by focusing the laser light LL inside the light-transmitting member 70 to modify a portion of the light-transmitting member 70. For example, a laser light source capable of oscillating a pulsed laser is used as the laser light LL. When a pulsed laser is used, the pulse width is, for example, 300 fsec or more and 10 psec or less.

[0031] As shown in FIG. 18 , in the eighth step, the light-transmitting member 70 is then cleaved at the positions of the modified portions 75 to separate the light-transmitting member 70. This results in a light-emitting device 100 as shown in FIG. 19 . The cleavage of the light-transmitting member 70 is performed, for example, by pressing a pressing member against the portion of the light-transmitting member 70 that overlaps with the modified portions 75. The light-transmitting member 70 is cleaved along the modified portions 75 formed in positions that overlap with the exposed portions 72, thereby obtaining a plurality of light-emitting devices each having a light-emitting unit 20 and the light-transmitting member 70. Note that in the eighth step, the light-transmitting member 70 may be cleaved at the positions of the exposed portions 72 by blade dicing to separate the light-transmitting member 70.

[0032] The effects of the method for manufacturing a light emitting device according to the embodiment will be described below. In a manufacturing method in which a structure having a plurality of light-emitting portions and a light-transmitting member are bonded via a bonding member to separate the light-transmitting member, if the bonding member is located at a position where the light-transmitting member is to be fractured, fracture defects are likely to occur. To reduce the occurrence of fracture defects, it is preferable to remove the bonding member located at the position where the light-transmitting member is to be fractured before fracture of the light-transmitting member. However, depending on the material of the bonding member, it is difficult to ensure an etching selectivity with respect to the light-emitting portions, and it is therefore necessary to form a mask to protect the light-emitting portions when removing the bonding member. However, since light-transmitting members are typically thin and easily fractured, it is difficult to form a mask only over the light-emitting portions immediately before fracture of the light-transmitting member.

[0033] In contrast, in the manufacturing method of the light-emitting device according to the embodiment, in a first step, a structure 5 having a metal layer 30 covering the plurality of light-emitting units 20 is prepared. In a fourth step, a light-transmitting member 70 is bonded to the lower surfaces 20b of the plurality of light-emitting units 20 via a bonding member 60. Thereafter, in a sixth step, the metal layer 30 is used as a mask to remove portions of the bonding member 60 located between the plurality of light-emitting units 20, thereby forming exposed portions 72 where the light-transmitting member 70 is exposed from the bonding member 60. Then, in an eighth step, the light-transmitting member 70 is cleaved at the positions of the exposed portions 72, thereby dividing the light-transmitting member 70 into individual pieces. This allows the bonding members 60 located at the positions where the light-transmitting member 70 will be cleaved to be removed before cleaving the light-transmitting member 70 using the metal layer 30 previously formed on the light-emitting units 20 as a mask, thereby reducing the occurrence of cleaving defects.

[0034] Furthermore, in the manufacturing method of the light-emitting device according to the embodiment, in the eighth step, modified portions 75 are formed inside the light-transmitting member 70 by irradiating the positions of the exposed portions 72 with laser light LL, and the light-transmitting member 70 is then cut at the positions of the modified portions 75 to separate the light-transmitting member 70. This reduces the load on the light-emitting units 20 and the light-transmitting member 70 compared to when the light-emitting units 20 and the light-transmitting member 70 are cut into individual pieces by blade dicing or the like, thereby improving the reliability of the light-emitting device.

[0035] Furthermore, in the manufacturing method for the light emitting device according to the embodiment, in the fourth step, before bonding the light-transmitting member 70 via the bonding member 60, grooves 45 are formed in the protective member 40 by continuously removing portions of the protective member 40 that do not overlap with the plurality of light-emitting units 20 in a planar view. This allows gas generated when the bonding member 60 is cured to pass through the grooves 45 formed in the protective member 40 and be exhausted to the outside of the protective member 40. This reduces the occurrence of bonding defects caused by voids that form between the bonding member 60 and the light-transmitting member 70 due to gas generated when the bonding member 60 is cured.

[0036] Furthermore, in the manufacturing method of the light emitting device according to the embodiment, in the fourth step, the lower surfaces 20b of the plurality of light emitting sections 20 are roughened before the light-transmitting member 70 is bonded via the bonding member 60. This improves the adhesion between the lower surfaces 20b of the plurality of light emitting sections 20 and the bonding member 60. Furthermore, light emitted from the plurality of light emitting sections 20 is more easily extracted from the lower surfaces 20b of the light emitting sections 20, thereby improving the light extraction efficiency of the light emitting device 100.

[0037] Furthermore, in the manufacturing method for the light emitting device according to the embodiment, in the third step, after removing the first substrate 10, the lower surfaces 20b of the plurality of light emitting units 20 are planarized. This removes residues resulting from the removal of the first substrate 10, and when roughening the lower surfaces 20b of the plurality of light emitting units 20, the lower surfaces 20b of the light emitting units 20 can be efficiently roughened.

[0038] Furthermore, in the manufacturing method of the light emitting device according to the embodiment, in the first step, the structure 5 having the metal layer 30 containing chromium is prepared. This makes it possible to selectively remove the bonding member 60 while reducing etching of the structure 5 when removing the bonding member 60.

[0039] Furthermore, in the manufacturing method of the light emitting device according to the embodiment, in the fourth step, the light-transmitting member 70 is bonded via the bonding member 60 made of a cured material containing polysilazane. This allows the light emitting section 20 and the light-transmitting member 70 to be bonded together using the bonding member 60 containing a large amount of inorganic components, and a highly reliable light emitting device can be obtained in which deterioration of the bonding member 60 due to light emitted from the light emitting section 20 is reduced.

[0040] Furthermore, in the manufacturing method of the light emitting device according to the embodiment, in the sixth step, reactive ion etching using a fluorine-based gas is performed to remove the portions of the bonding member 60 located between the plurality of light emitting units 20. This allows efficient removal of even bonding member 60 containing a large amount of inorganic components.

[0041] In the manufacturing method of the light emitting device according to the embodiment, the light-transmitting member 70 including the wavelength conversion member is joined in the fourth step. This allows the light-transmitting member 70 to convert the wavelength of part of the light emitted from the light emitting unit 20 and emit the converted light from the light emitting device 100.

[0042] Furthermore, in the manufacturing method of the light emitting device according to the embodiment, in the first step, a structure 5 is prepared on the upper surface 10a of the first substrate 10, in which a plurality of light emitting sections 20 are arranged such that the distance D between adjacent light emitting sections 20 is 10 μm or more and 30 μm or less. By setting the distance D to 10 μm or more, the bonding member 60 located between adjacent light emitting sections 20 can be efficiently removed. By setting the distance D to 30 μm or less, a larger number of light emitting sections 20 can be arranged on the first substrate 10, thereby improving the productivity of the light emitting device.

[0043] Furthermore, in the manufacturing method of the light emitting device according to the embodiment, in the fourth step, the light-transmitting member 70 is bonded to the lower surfaces 20b of the plurality of light emitting units 20 via the bonding member 60 having a thickness of 4 μm or more and 6 μm or less. By making the thickness of the bonding member 60 4 μm or more, the bonding strength between the light emitting units 20 and the light-transmitting member 70 can be improved. By making the thickness of the bonding member 60 6 μm or less, the bonding member 60 can be removed efficiently in the sixth step.

[0044] Furthermore, in the manufacturing method of the light emitting device according to the embodiment, in the first step, a structure 5 is prepared in which a plurality of light emitting sections 20 are covered with a metal layer 30 having a thickness of 0.01 μm or more and 1 μm or less. By making the thickness of the metal layer 30 0.01 μm or more, etching of the light emitting sections 20 can be further reduced when removing the bonding member 60 using the metal layer 30 as a mask in the sixth step. By making the thickness of the metal layer 30 1 μm or less, the metal layer 30 can be easily removed in the seventh step.

[0045] <Light source> FIG. 20 is a cross-sectional view illustrating a light source according to an embodiment. As shown in FIG. 20, a light source 200 according to the embodiment includes a light emitting device 100, a mounting substrate 110, a conductive member 120, and a light reflective member .

[0046] The mounting substrate 110 is located below the light source 200. The mounting substrate 110 includes, for example, at least one of aluminum nitride and glass epoxy resin.

[0047] The conductive member 120 is disposed on the mounting substrate 110. The conductive member 120 includes, for example, at least one of Ti (titanium), Cu (copper), Ni (nickel), Pd (palladium), and Au (gold).

[0048] The light emitting device 100 is disposed on a conductive member 120. The light emitting device 100 is disposed on the conductive member 120 with the electrode 22 facing downward. The light emitting device 100 is electrically connected to the conductive member 120 via the electrode 22.

[0049] The light-reflecting member 130 is disposed on the mounting substrate 110 and around the light-emitting device 100. The light-reflecting member 130 includes, for example, a resin and a light-reflecting material. The resin includes, for example, at least one of a silicone resin, an epoxy resin, and an acrylic resin. The light-reflecting material includes, for example, at least one of titanium oxide, aluminum oxide, and silicon oxide.

[0050] Embodiments may include the following features.

[0051] (Configuration 1) a first step of preparing a structure including a first substrate, a plurality of light-emitting units arranged on an upper surface of the first substrate at a distance from each other, a metal layer disposed on the upper surface of the first substrate and covering at least the plurality of light-emitting units, and a protective member covering the metal layer; a second step of bonding a second substrate onto the protective member; a third step of removing the first substrate to expose lower surfaces of the plurality of light emitting units; a fourth step of joining a translucent member to the lower surfaces of the plurality of light-emitting units via a joining member; a fifth step of removing the second substrate; a sixth step of removing the protective member and portions of the bonding member located between the plurality of light emitting units using the metal layer as a mask, thereby forming exposed portions in which the light-transmitting member is exposed from the bonding member; a seventh step of removing the metal layer; an eighth step of dividing the light-transmitting member into individual pieces by cutting the light-transmitting member at the positions of the exposed portions; A method for manufacturing a light emitting device comprising the steps of:

[0052] (Configuration 2) the eighth step forms a modified portion inside the light-transmitting member by irradiating the exposed portion with laser light, and separates the light-transmitting member into individual pieces at the positions of the modified portions.

[0053] (Configuration 3) 3. The method for manufacturing a light-emitting device according to claim 1, wherein in the fourth step, before joining the translucent member via the joining member, a groove is formed in the protective member by continuously removing a portion of the protective member that does not overlap with the plurality of light-emitting units in a planar view.

[0054] (Configuration 4) The method for manufacturing a light emitting device according to any one of configurations 1 to 3, wherein in the fourth step, the lower surfaces of the plurality of light emitting sections are roughened before the light-transmitting member is joined via the joining member.

[0055] (Configuration 5) 5. The method for manufacturing a light emitting device according to any one of configurations 1 to 4, wherein in the third step, after removing the first substrate, the lower surfaces of the plurality of light emitting sections are flattened.

[0056] (Configuration 6) 6. The method for manufacturing a light emitting device according to any one of configurations 1 to 5, wherein in the first step, the structure having the metal layer containing chromium is prepared.

[0057] (Configuration 7) 7. The method for manufacturing a light emitting device according to any one of configurations 1 to 6, wherein in the fourth step, the light-transmitting member is bonded via the bonding member made of a cured material containing polysilazane.

[0058] (Configuration 8) 8. The method for manufacturing a light emitting device according to claim 7, wherein in the sixth step, portions of the bonding member located between the plurality of light emitting portions are removed by reactive ion etching using a fluorine-based gas.

[0059] (Configuration 9) 9. The method for manufacturing a light emitting device according to any one of configurations 1 to 8, wherein in the fourth step, the light-transmitting member includes a wavelength conversion member.

[0060] (Configuration 10) 10. The method for manufacturing a light-emitting device according to any one of configurations 1 to 9, wherein in the first step, the structure is prepared on the upper surface of the first substrate, in which the plurality of light-emitting sections are arranged so that the distance between adjacent light-emitting sections is 5 μm or more and 30 μm or less.

[0061] (Configuration 11) 11. The method for manufacturing a light emitting device according to any one of configurations 1 to 10, wherein in the fourth step, the translucent member is bonded to the lower surfaces of the plurality of light emitting sections via the bonding member having a thickness of 4 μm or more and 6 μm or less.

[0062] (Configuration 12) 12. The method for manufacturing a light emitting device according to any one of configurations 1 to 11, wherein in the first step, the structure is prepared in which the plurality of light emitting portions are covered with the metal layer having a thickness of 0.01 μm or more and 1 μm or less.

[0063] As described above, according to the embodiment, a method for manufacturing a light emitting device that can reduce the occurrence of defective cutting is provided.

[0064] The above-described embodiments are examples of realizing the present invention, and the present invention is not limited to these embodiments. For example, the present invention also includes embodiments in which some components or steps are added, deleted, or modified in the above-described embodiments. Furthermore, the above-described embodiments can be implemented in combination with each other. [Explanation of symbols]

[0065] 5: Structure 10: First board 10a:Top surface 20: Light emitting part 20a:Top surface 20b: Bottom surface 20c: Side 21: Semiconductor laminate 22: Electrode 30: Metal layer 40: Protective material 40a:Top surface 40b: Bottom surface 45: Groove 50: Second board 60: Joint material 70: Translucent member 72:Exposed part 75: Modification section 100: Light emitting device 110: Mounting board 120: Conductive member 130: Light-reflecting member 200: Light source LL: Laser light

Claims

1. a first step of preparing a structure including a first substrate, a plurality of light-emitting units arranged on an upper surface of the first substrate at a distance from each other, a metal layer disposed on the upper surface of the first substrate and covering at least the plurality of light-emitting units, and a protective member covering the metal layer; a second step of bonding a second substrate onto the protective member; a third step of removing the first substrate to expose lower surfaces of the plurality of light emitting units; a fourth step of joining a translucent member to the lower surfaces of the plurality of light-emitting units via a joining member; a fifth step of removing the second substrate; a sixth step of removing the protective member and portions of the joining member located between the plurality of light-emitting units using the metal layer as a mask, thereby forming an exposed portion in which the translucent member is exposed from the joining member; a seventh step of removing the metal layer; an eighth step of dividing the light-transmitting member into individual pieces by cutting the light-transmitting member at the positions of the exposed portions; A method for manufacturing a light emitting device comprising the steps of:

2. 2. The method for manufacturing a light-emitting device according to claim 1, wherein in the eighth step, a modified portion is formed inside the light-transmitting member by irradiating a laser beam to the position of the exposed portion, and the light-transmitting member is divided into individual pieces by fracturing the light-transmitting member at the position of the modified portion.

3. 2. The method for manufacturing a light emitting device according to claim 1, wherein in the fourth step, before joining the translucent member via the joining member, grooves are formed in the protective member by continuously removing portions of the protective member that do not overlap with the plurality of light emitting sections in a planar view.

4. The method for manufacturing a light emitting device according to claim 1 , wherein in the fourth step, the lower surfaces of the plurality of light emitting portions are roughened before the light-transmitting member is joined via the joining member.

5. The method for manufacturing a light emitting device according to claim 1 , wherein in the third step, after removing the first substrate, the lower surfaces of the plurality of light emitting portions are planarized.

6. 6. The method for manufacturing a light emitting device according to claim 1, wherein in the first step, the structure having the metal layer containing chromium is prepared.

7. 6. The method for manufacturing a light emitting device according to claim 1, wherein in the fourth step, the light-transmitting member is joined via the joining member made of a cured material containing polysilazane.

8. 8. The method for manufacturing a light emitting device according to claim 7, wherein in the sixth step, portions of the bonding member located between the plurality of light emitting portions are removed by reactive ion etching using a fluorine-based gas.

9. 6. The method for manufacturing a light emitting device according to claim 1, wherein in the fourth step, the translucent member includes a wavelength conversion member.

10. 6. The method for manufacturing a light-emitting device according to claim 1, wherein in the first step, the structure is prepared on the upper surface of the first substrate, in which the plurality of light-emitting sections are arranged so that the distance between adjacent ones of the plurality of light-emitting sections is 5 μm or more and 30 μm or less.

11. 6. The method for manufacturing a light emitting device according to claim 1, wherein in the fourth step, the translucent member is bonded to the lower surfaces of the plurality of light emitting portions via the bonding member having a thickness of 4 μm or more and 6 μm or less.

12. 6. The method for manufacturing a light emitting device according to claim 1, wherein in the first step, the structure is prepared in which the plurality of light emitting portions are covered with the metal layer having a thickness of 0.01 μm or more and 1 μm or less.

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