Method of manufacturing vibrator

Abstract

To provide a method of manufacturing a vibrator capable of highly accurate frequency adjustment.SOLUTION: The method of manufacturing the vibrator 1 includes a step of preparing the vibrating arm 22 including the first surface 10a and the second surface 10b and extending along the first direction, the first member 51 provided on the first surface 10a of the vibrating arm 22, and the second member 52 provided on the surface 10b facing the second surface 11c of the vibrating arm 22, and a step of adjusting the frequency by irradiating the first member 51 or the second member 52 with an ion beam. The process of adjusting the frequency is performed by removing at least a part of the first member 51 and masking the first member 51 in the first state in which the first member 51 is irradiated with the ion beam, and attaching at least a part of the second member 52 to the 10b of the second surface of the resonating arm 22 in the second state in which the second member 52 is irradiated with the ion beam.SELECTED DRAWING: Figure 8

Description

[Technical Field]

[0001] The present invention relates to a method for manufacturing a vibrator. [Background technology]

[0002] Patent Document 1 discloses a frequency adjusting device that supplies high-density plasma to a surface electrode of a quartz oscillator and adjusts the frequency. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2001-185971 [Patent Document 2] Japanese Patent Application Laid-Open No. 2003-133885 Summary of the Invention [Problem to be solved by the invention]

[0004] However, when frequency adjustment using high-density plasma is applied to a vibrator having multiple vibrating arms as shown in Patent Document 2, achieving high-precision frequency adjustment is problematic. For example, there is a risk of the metal used for adjustment being etched too much, resulting in poor frequency adjustment where the frequency becomes higher than the target frequency. [Means for solving the problem]

[0005] A method for manufacturing a vibrator is a method for manufacturing a vibrator having a vibrating arm, and includes the steps of preparing a vibrating arm having a first surface and a second surface that are opposite each other and extending along a first direction, a first member provided on the first surface of the vibrating arm, and second members provided on surfaces opposite the second surface of the vibrating arm on both sides of the first member provided on the vibrating arm in a planar view, and adjusting a frequency by irradiating an ion beam onto the first member or the second member, wherein the step of adjusting the frequency is performed by removing at least a portion of the first member and masking the first member in a first state in which the first member is irradiated onto the first member, and attaching at least a portion of the second member to the second surface of the vibrating arm in a second state in which the second member is irradiated onto the ion beam.

[0006] A method for manufacturing a vibrator is a method for manufacturing a vibrator having a vibrating arm, and includes the steps of preparing a vibrating arm having a first surface and a second surface that are opposite each other and extending along a first direction, a first member provided on the first surface of the vibrating arm, and second members provided on surfaces opposite the second surface of the vibrating arm on both sides of the first member provided on the vibrating arm in a planar view, the second member being provided on the surface facing the second surface of the vibrating arm; and adjusting a frequency by irradiating an ion beam onto the first member or the second member, wherein the step of adjusting the frequency is performed by masking the second member and removing at least a portion of the first member in a first state in which the first member is irradiated with the ion beam, and by attaching at least a portion of the second member to the second surface of the vibrating arm in a second state in which the first member is masked and the second member is irradiated with the ion beam. [Brief explanation of the drawings]

[0007] [Figure 1] 1 is a schematic plan view showing the configuration of a vibrator manufactured by a vibrator manufacturing method according to a first embodiment. [Figure 2] Schematic cross-sectional view taken along line AA in Figure 1. [Figure 3] Schematic cross-sectional view taken along line BB in FIG. 1. [Figure 4]FIG. 3 is a flowchart showing a method for manufacturing the vibrator according to the first embodiment. [Figure 5] FIG. 10 is a flowchart showing a method for manufacturing a vibrator before frequency adjustment. [Figure 6] 5A and 5B are schematic cross-sectional views illustrating a frequency adjustment method. [Figure 7] 5A and 5B are schematic cross-sectional views illustrating a frequency adjustment method. [Figure 8] 5A and 5B are schematic cross-sectional views illustrating a frequency adjustment method. [Figure 9] 5A and 5B are schematic cross-sectional views illustrating a frequency adjustment method. [Figure 10] 10A to 10C are schematic cross-sectional views illustrating a frequency adjustment method in a vibrator manufacturing method according to a second embodiment. [Figure 11] FIG. 11 is a schematic plan view showing the configuration of a vibrator manufactured by a vibrator manufacturing method according to a third embodiment. [Figure 12] 12 is a schematic cross-sectional view taken along line CC in FIG. 11 . [Figure 13] 10A and 10B are schematic plan views illustrating a method for manufacturing a vibrator according to a fourth embodiment. [Figure 14] 14 is a schematic cross-sectional view taken along line DD in FIG. 13. DETAILED DESCRIPTION OF THE INVENTION

[0008] 1. First embodiment A vibrator 1 manufactured by the vibrator manufacturing method according to the first embodiment will be described with reference to Figures 1, 2, and 3. The vibrator 1 is in a state before frequency adjustment.

[0009] The vibrator 1 according to this embodiment can be manufactured by processing an SOI (Silicon on Insulator) substrate 10. The SOI substrate 10 is a substrate in which a silicon substrate 11, a buried oxide film (BOX: Buried Oxide) 12, and a surface silicon layer 13 are stacked in this order. For example, the silicon substrate 11 and the surface silicon layer 13 are made of single crystal silicon (Si), and the buried oxide film 12 is made of silicon dioxide (SiO2) or the like. In this embodiment, the surface silicon layer 13 corresponds to the base material that makes up the base 21 and the vibrating arms 22.

[0010] As shown in Figures 1, 2, and 3, the vibrator 1 includes a silicon substrate 11, a buried oxide film 12 arranged in a partial region of the silicon substrate 11, a vibrating body 20 made of silicon of a surface silicon layer 13, a piezoelectric driving unit 30, a weight unit 40, a first member 51, and a second member 52.

[0011] The vibrating body 20 has a base 21 supported by a buried oxide film 12, and vibrating arms 22 that are separated from the surrounding silicon other than the base 21 in an area where the buried oxide film 12 has been removed, have a first surface 10a and a second surface 10b that are opposite each other, and extend along a first direction. That is, the vibrating body 20 has the base 21 and the vibrating arms 22 that extend from the base 21 in a plan view and have a weight 40 and a first member 51 provided on the first surface 10a of the vibrating arms 22. In the example shown in FIGS. 1 to 3, the vibrating body 20 has three vibrating arms 22. A recess 11a that is recessed on the opposite side to the vibrating body 20 is formed in the silicon substrate 11 at a position facing the vibrating arm 22, and forms a cavity 11b. In addition, second members 52 are provided on surfaces 11c opposite the second surface 10b of the vibrating arm 22 on both sides of the first member 51 provided on the vibrating arm 22 in plan view.

[0012] The piezoelectric driving unit 30 vibrates the vibrating arm 22, is provided on the first surface 10a of the vibrating arm 22, and includes a first electrode 31, a piezoelectric layer 32, a second electrode 33, multiple wirings 34, and two electrode pads 35. The first electrode 31 and the second electrode 33 are arranged to sandwich the piezoelectric layer 32. That is, the first electrode 31 arranged on the first surface 10a of the vibrating arm 22, the piezoelectric layer 32 arranged on the opposite side of the first surface 10a of the first electrode 31, and the second electrode 33 arranged on the opposite side of the piezoelectric layer 32 from the first electrode 31 are laminated in this order. In the example shown in FIGS. 1 to 3, three sets of first electrodes 31, piezoelectric layers 32, and second electrodes 33 are provided corresponding to the three vibrating arms 22.

[0013] The multiple wirings 34 are electrically connected to the first electrode 31 and the second electrode 33 so as to vibrate adjacent vibrating arms 22 in opposite phases. Specifically, the first electrode 31 of the first vibrating arm 22a, the second electrode 33 of the second vibrating arm 22b, and the first electrode 31 of the third vibrating arm 22c are electrically connected by the wirings 34, and the second electrode 33 of the first vibrating arm 22a, the first electrode 31 of the second vibrating arm 22b, and the second electrode 33 of the third vibrating arm 22c are electrically connected by the wirings 34. In addition, the multiple wirings 34 are electrically connected to electrode pads 35, and by applying a voltage between the two electrode pads 35 from the outside, the adjacent vibrating arms 22 can be vibrated in opposite phases.

[0014] As for the materials constituting these, for example, the piezoelectric layer 32 is made of aluminum nitride (AlN) or the like, the first electrode 31 and the second electrode 33 are made of titanium nitride (TiN) or the like, and the multiple wirings 34 and electrode pads 35 are made of titanium nitride (TiN), aluminum (Al), copper (Cu), or the like.

[0015] When a voltage is applied between the first electrode 31 and the second electrode 33 via the two electrode pads 35, the piezoelectric layer 32 expands and contracts, causing the vibrating arm 22 to vibrate. The vibration is greatly excited at a natural frequency, minimizing the impedance. As a result, an oscillator using this vibrator 1 oscillates at an oscillation frequency determined mainly by the frequency of the vibrating arm 22.

[0016] The weight portion 40 and the first member 51 provided on the first surface 10a of the vibrating arm 22 are irradiated with an ion beam from the first surface 10a side, whereby at least a portion of the weight portion 40 and the first member 51 are evaporated and removed, thereby reducing the mass of the vibrating arm 22 and used for adjusting the frequency of the vibrator 1 to increase the frequency. Furthermore, the second member 52 provided on the surface 11c opposite the second surface 10b of the vibrating arm 22 is irradiated with an ion beam from the first surface 10a side, whereby at least a portion of the second member 52 is evaporated and attached to the second surface 10b of the vibrating arm 22 as a third member 53, thereby increasing the mass of the vibrating arm 22 and used for adjusting the frequency of the vibrator 1 to decrease the frequency.

[0017] The materials constituting the first member 51 and the second member 52 include, for example, aluminum nitride (AlN) constituting the piezoelectric layer 32, titanium nitride (TiN) constituting the first electrode 31 and the second electrode 33, and titanium nitride (TiN), aluminum (Al), or copper (Cu) constituting the wiring 34 and the electrode pad 35.

[0018] In this embodiment, the weight portion 40 and the first member 51 are provided on the first surface 10a of the vibrating arm 22 for frequency adjustment, but it is also possible to have only the first member 51 without the weight portion 40. Also, although the tripod vibrator 1 having three vibrating arms 22 has been given as an example and explained, the vibrator having vibrating arms may be a quartz tuning fork vibrator, a MEMS tuning fork vibrator, a quartz gyro sensor element, or a MEMS gyro sensor element.

[0019] Next, a method for manufacturing the vibrator 1 according to this embodiment will be described with reference to FIGS.

[0020] As shown in FIG. 4, the method for manufacturing the vibrator 1 includes a preparation step S1, a frequency adjustment step S2, a sealing step S3, and a singulation step S4.

[0021] First, in a preparation step S1, a vibrating arm 22 having a first surface 10a and a second surface 10b that are opposite each other and extending along a first direction, a first member 51 provided on the first surface 10a of the vibrating arm 22, and second members 52 provided on a surface 11c that faces the second surface 10b of the vibrating arm 22 on both sides of the first member 51 provided on the vibrating arm 22 in a plan view are prepared. Note that in this embodiment, a vibrator 1 before frequency adjustment that includes the vibrating arm 22, the first member 51, and the second member 52 will be described as an example.

[0022] Here, as shown in FIG. 5, the method for manufacturing the vibrator 1 before frequency adjustment includes a substrate preparation step S11, a piezoelectric drive portion formation step S12, a protective film formation step S13, an etching step S14, and a first member and second member formation step S15.

[0023] In the substrate preparation step S11, a large SOI substrate 10 is prepared in order to batch process the resonators 1 and improve mass productivity.

[0024] Next, in the piezoelectric driver formation step S12, the piezoelectric driver 30, wiring 34, electrode pads 35, and weight 40 are formed by photolithography on the SOI substrate 10 on which the base 21 and vibrating arms 22 are formed.

[0025] Next, in the protective film forming step S13, a photoresist is applied onto the SOI substrate 10 on which the piezoelectric driving section 30 and the like are formed, and an element outline mask pattern is formed by photolithography to serve as an etching protective film.

[0026] Next, in an etching process S14, the surface silicon layer 13 exposed from the etching protection film is etched using an etching solution of TMAH (tetramethylammonium hydroxide) or potassium hydroxide (KOH). Thereafter, the buried oxide film 12 exposed from the surface silicon layer 13 is etched using an etching solution of BHF (buffered hydrofluoric acid). Next, the silicon substrate 11 exposed from the buried oxide film 12 is etched again using an etching solution of TMAH (tetramethylammonium hydroxide) or potassium hydroxide (KOH), forming a recess 11a below the vibrating arm 22 and constituting a cavity 11b. Thereafter, the etching protection film is peeled off, thereby completing the vibrator 1 before the formation of the first member 51 and the second member 52.

[0027] Next, in a first member and second member forming process S15, the first member 51 is formed on the first surface 10a of the vibrating arm 22, and the second member 52 is formed on the surface 11c facing the second surface 10b of the vibrating arm 22 by photolithography. If the first member 51 and the second member 52 are made of the same material, they are simultaneously formed by vapor deposition or sputtering using a mask with openings. By simultaneously forming them, the first member 51 is provided on the first surface 10a of the vibrating arm 22, opposite the silicon substrate 11 serving as a substrate on which the vibrating arm 22 is disposed, and the second members 52 are provided on the surfaces 11c of the silicon substrate 11 facing the second surface 10b of the vibrating arm 22 on both sides of the first member 51 of the vibrating arm 22. This process completes the vibrator 1 on which the first member 51 and the second member 52 are formed.

[0028] Next, returning to FIG. 4, in the frequency adjusting step S2, the first member 51 or the second member 52 is irradiated with an ion beam to adjust the frequency. In a first state in which an ion beam is irradiated onto the first member 51, at least a portion of the first member 51 is removed and the first member 51 is masked, and in a second state in which an ion beam is irradiated onto the second member 52, at least a portion of the second member 52 is attached to the second surface 10b of the vibrating arm 22.

[0029] In the first state, as shown in FIG. 6, an ion beam is irradiated from the first surface 10a side onto the first member 51 provided on the first surface 10a of the vibrating arm 22. By irradiating the ion beam, as shown in FIG. 7, at least a portion of the first member 51 is evaporated and removed, reducing the mass of the vibrating arm 22 and performing frequency adjustment to increase the frequency. In this embodiment, the weight portion 40 provided below the first member 51 is also removed at the same time, thereby widening the frequency adjustment range. Although not shown in FIG. 7, the second member 52 provided on the surface 11c opposite the second surface 10b of the vibrating arm 22 is irradiated from the first surface 10a side onto the second member 52. At least a portion of the second member 52 is evaporated and attached to the second surface 10b of the vibrating arm 22, increasing the mass of the vibrating arm 22 and performing frequency adjustment to decrease the frequency. Here, the main focus of frequency adjustment may be to increase the frequency by selecting materials for the first member 51 and the second member 52 so that the evaporation of the first member 51 is higher than the evaporation of the second member 52. Alternatively, the main focus of frequency adjustment may be to increase the frequency by increasing the evaporation of the first member 51 compared to the second member 52 by controlling the divergence angle of the ion beam to be large.

[0030] In the second state, as shown in Figure 8, a mask 71 is placed on the first member 51 and the weight portion 40 to mask the first member 51 and the weight portion 40, and an ion beam is irradiated from the first surface 10a side onto the second member 52 provided on the surface 11c opposite the second surface 10b of the vibrating arm 22, thereby evaporating at least a portion of the second member 52 and attaching it to the second surface 10b of the vibrating arm 22 as a third member 53, thereby increasing the mass of the vibrating arm 22 and performing a frequency adjustment to lower the frequency.

[0031] After the target frequency is reached, as shown in FIG. 9, a mask 72 that masks the second member 52 is placed on the mask 71 to prevent the second member 52 from being irradiated with the ion beam, thereby completing the frequency adjustment.

[0032] Next, in the sealing process S3, a lid having a recessed portion recessed on the side opposite to the vibrating arm 22 (not shown) is bonded onto the surface silicon layer 13 of the SOI substrate 10. The lid may be in an individual piece state, but it is preferable to bond the lid in a state where it is integrally formed with a large substrate.

[0033] Thereafter, in a singulation step S4, the large SOI substrate 10 to which the lid body is joined is cut and singulated using a dicing saw, an ion beam, or the like, thereby completing the vibrator 1 with its frequency adjusted.

[0034] In the manufacturing method of the vibrator 1 according to this embodiment, in the frequency adjustment step S2 in which the frequency is adjusted by irradiating the first member 51 or the second member 52 with an ion beam, in a first state in which the first member 51 is irradiated with an ion beam, at least a portion of the first member 51 is removed to reduce the mass of the vibrating arm 22, thereby increasing the frequency, and in a second state in which the second member 52 is irradiated with the ion beam, the first member 51 is masked and at least a portion of the second member 52 is attached to the second surface 10b of the vibrating arm 22, thereby increasing the mass of the vibrating arm 22, thereby decreasing the frequency. This frequency adjustment can be performed by irradiating the ion beam from the first surface 10a side.

[0035] Therefore, high-precision frequency adjustment can be achieved even in the vibrator 1 having a plurality of vibrating arms 22, and the frequency adjustment failure can be reduced, thereby improving the productivity of the vibrator 1.

[0036] 2. Second embodiment Next, a method for manufacturing the vibrator according to the second embodiment will be described with reference to FIG.

[0037] The method for manufacturing the vibrator 1 according to this embodiment is the same as the method for manufacturing the vibrator 1 according to the first embodiment, except that the frequency adjustment step S2 is different from the method for manufacturing the vibrator 1 according to the first embodiment. Note that the following description will focus on the differences from the first embodiment described above, and a description of similar points will be omitted.

[0038] The frequency adjustment process S2 is performed by masking the second member 52 and removing at least a portion of the first member 51 in a first state in which the first member 51 is irradiated with an ion beam, and by masking the first member 51 and attaching at least a portion of the second member 52 to the second surface 10b of the vibrating arm 22 in a second state in which the second member 52 is irradiated with an ion beam.

[0039] 10, a mask 73 is placed on the second member 52 to mask the second member 52, and an ion beam is irradiated from the first surface 10a side to the first member 51 provided on the first surface 10a of the vibrating arm 22. By irradiating the ion beam, at least a portion of the first member 51 is evaporated and removed, reducing the mass of the vibrating arm 22 and performing frequency adjustment to increase the frequency.

[0040] In the second state, a mask 71 is placed on the first member 51 and the weight portion 40 to mask the first member 51 and the weight portion 40, and then the mask 73 is removed. An ion beam is irradiated from the first surface 10a side onto the second member 52 provided on the surface 11c opposite the second surface 10b of the vibrating arm 22, thereby evaporating at least a portion of the second member 52 and attaching it to the second surface 10b of the vibrating arm 22 as a third member 53, thereby increasing the mass of the vibrating arm 22 and performing a frequency adjustment to lower the frequency.

[0041] By adopting such a configuration, it is possible to obtain the same effects as in the first embodiment.

[0042] 3. Third embodiment Next, a vibrator 1a manufactured by the vibrator manufacturing method according to the third embodiment will be described with reference to Figures 11 and 12. Figure 12 is a schematic cross-sectional view showing the configuration of the vibrator 1a after frequency adjustment.

[0043] The vibrator 1a of this embodiment is similar to the vibrator 1 of the first embodiment except that the structures of the first member 51a and the second member 52a are different from those of the vibrator 1 of the first embodiment. Note that the following description will focus on the differences from the first embodiment described above, and a description of similar points will be omitted.

[0044] 11 and 12, in the vibrator 1a, the first member 51a corresponds to the weight portion 40, and the second member 52a corresponds to the silicon substrate 11. In other words, the second member 52a is the material of the silicon substrate 11 on which the vibrating arms 22 are arranged.

[0045] By irradiating the first member 51a, which is the weight portion 40 provided on the first surface 10a of the vibrating arm 22, with an ion beam from the first surface 10a side, at least a portion of the first member 51a is evaporated and removed, reducing the mass of the vibrating arm and increasing the frequency. Furthermore, by masking the first member 51a and irradiating the surface 11c of the silicon substrate 11, which faces the second surface 10b of the vibrating arm 22 and forms the second member 52a, with an ion beam from the first surface 10a side, at least a portion of the second member 52a is evaporated and attached to the second surface 10b of the vibrating arm 22 as the third member 53a, increasing the mass of the vibrating arm 22 and decreasing the frequency. Ion beam marks 60 resulting from the ion beam irradiation remain on the surface 11c of the silicon substrate 11.

[0046] Next, the manufacturing method of the vibrator 1a according to this embodiment is the same as the manufacturing method of the vibrator 1 according to the first embodiment except that the first member and second member forming step S15 in the preparation step S1 is different from the manufacturing method of the vibrator 1 according to the first embodiment. Note that the following description will focus on the differences from the first embodiment described above, and a description of similar points will be omitted.

[0047] The first member and second member forming step S15 in the preparation step S1 is replaced with the piezoelectric drive unit forming step S12 and the etching step S14 in the preparation step S1. That is, the formation of the first member 51a corresponds to the formation of the weight portion 40 in the piezoelectric drive unit forming step S12. Furthermore, the formation of the second member 52a corresponds to the formation of the surface 11c of the silicon substrate 14 that faces the second surface 10b of the vibrating arm 22 in the etching step S14.

[0048] Therefore, in the frequency adjustment process S2, by irradiating the first member 51a, which is the weight portion 40, with an ion beam, at least a portion of the first member 51a is evaporated and removed, thereby performing frequency adjustment to increase the frequency. Also, by masking the first member 51a and irradiating the surface 11c of the silicon substrate 14, which will become the second member 52a, with an ion beam, at least a portion of the second member 52a is evaporated and attached to the second surface 10b of the vibrating arm 22 as the third member 53a, thereby performing frequency adjustment to decrease the frequency.

[0049] By adopting such a configuration, it is possible to obtain the same effects as in the first embodiment.

[0050] 4. Fourth embodiment Next, a method for manufacturing a vibrator according to the fourth embodiment will be described with reference to Fig. 13 and Fig. 14. Fig. 14 is a schematic cross-sectional view showing the configuration of vibrator 1b and tray 55 after frequency adjustment.

[0051] The method for manufacturing the vibrator 1b according to this embodiment is the same as the method for manufacturing the vibrator 1 according to the first embodiment, except that the structure of the vibrator 1b, the first member and second member forming step S15 in the preparation step S1, and the sealing step S3 are different from the method for manufacturing the vibrator 1 according to the first embodiment. Note that the following description will focus on the differences from the first embodiment described above, and a description of similar matters will be omitted.

[0052] The vibrator 1b is manufactured from a silicon substrate 14, as shown in FIGS.

[0053] In the first member and second member forming step S15 in the preparation step S1, the formation of the first member 51b is replaced by the piezoelectric drive unit forming step S12 in the preparation step S1, and the formation of the second member 52b is replaced by the preparation of a tray 55 that supports the silicon substrate 14 on which the vibrating arms 22 are formed. In other words, the formation of the first member 51b corresponds to the formation of the weight portion 40 in the piezoelectric drive unit forming step S12. Furthermore, the tray 55 that supports the silicon substrate 14 corresponds to the second member 52b.

[0054] In the frequency adjustment process S2, the silicon substrate 14 on which the vibrating arm 22 is formed is placed on a tray 55 having a recess 55a recessed on the side opposite the vibrating arm 22. An ion beam is applied to the first member 51b, which is the weight 40 provided on the first surface 10a of the vibrating arm 22, to evaporate and remove at least a portion of the first member 51b, thereby adjusting the frequency to increase. Furthermore, the second member 52b is masked, and a surface 55c of the tray 55 facing the second surface 10b of the vibrating arm 22, which is the second member 52b, is irradiated with an ion beam to evaporate at least a portion of the second member 52b and attach it to the second surface 10b of the vibrating arm 22 as a third member 53b, thereby adjusting the frequency to decrease. Ion beam marks 60 resulting from the ion beam irradiation remain on the surface 55c of the tray 55.

[0055] In addition, in the sealing process S3, a lid having a recessed portion recessed on the side opposite the vibrating arms 22 (not shown) is bonded to the upper surface of the silicon substrate 14, and a base having a recessed portion recessed on the side opposite the vibrating arms 22 (not shown) is bonded to the lower surface of the silicon substrate 14. Thereafter, in the singulation process S4, the joined lid, silicon substrate 14, and base are cut and singulated to complete the frequency-adjusted vibrator 1b.

[0056] In this embodiment, the second member 52b is a tray 55 that supports the silicon substrate 14 on which the vibrating arm 22 is formed, but this is not limited to this and may also be a package that contains the target material or the vibrating arm 22, etc.

[0057] By adopting such a configuration, it is possible to obtain the same effects as in the first embodiment. [Explanation of symbols]

[0058] 1...vibrator, 10...SOI substrate, 10a...first surface, 11...silicon substrate, 11a...recess, 11b...cavity, 12...buried oxide film, 13...surface silicon layer, 20...vibrator, 21...base, 22...vibrating arm, 30...piezoelectric drive unit, 31...first electrode, 32...piezoelectric layer, 33...second electrode, 34...wiring, 35...electrode pad, 40...weight, 51...first member, 52...second member, 53...third member, 60...ion beam mark, 71, 72, 73...mask.

Claims

1. A method for manufacturing a vibrator having a vibrating arm, comprising: a step of preparing a vibrating arm having a first surface and a second surface that are opposite each other and extending along a first direction, a first member provided on the first surface of the vibrating arm, and second members provided on surfaces of the vibrating arm facing the second surface on both sides of the first member provided on the vibrating arm in a plan view; and adjusting a frequency by irradiating the first member or the second member with an ion beam, The step of adjusting the frequency includes: In a first state in which the first member is irradiated with the ion beam, at least a part of the first member is removed, and the first member is masked; and in a second state in which the second member is irradiated with the ion beam, at least a part of the second member is attached to the second surface of the vibrating arm. A method for manufacturing a vibrator.

2. A method for manufacturing a vibrator having a vibrating arm, comprising: a step of preparing a vibrating arm having a first surface and a second surface that are opposite each other and extending along a first direction, a first member provided on the first surface of the vibrating arm, and second members provided on surfaces of the vibrating arm facing the second surface on both sides of the first member provided on the vibrating arm in a plan view; and adjusting a frequency by irradiating the first member or the second member with an ion beam, The step of adjusting the frequency includes: In a first state in which the second member is masked and the first member is irradiated with the ion beam, at least a part of the first member is removed, and in a second state in which the first member is masked and the second member is irradiated with the ion beam, at least a part of the second member is attached to the second surface of the vibrating arm. A method for manufacturing a vibrator.

3. The first member and the second member are made of the same material and are formed at the same time, so that the first member is provided on the first surface of the vibrating arm, opposite to the substrate on which the vibrating arm is arranged, and the second members are provided on surfaces of the substrate facing the second surface of the vibrating arm on both sides of the first member of the vibrating arm. The method for manufacturing the vibrator according to claim 1 or 2.

4. The second member is a material of a substrate on which the vibrating arm is disposed. The method for manufacturing the vibrator according to claim 1 or 2.

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