Temporary bonding layer, multilayer structure, temporary bonding composition, and method for packaging device

Abstract

To provide a temporary adhesive layer, a multilayer structure, a composition for temporary adhesion, and a method for packaging a device.SOLUTION: The present disclosure relates to a temporary bonding layer, a multilayer structure, a temporary bonding composition, and a method for packaging a device. The temporary adhesive layer has a specific storage elastic modulus after heating. The temporary adhesive layer in the multilayer structure has a specific complex viscosity. The temporary adhesion composition includes a composition having a specific ratio. The obtained temporary adhesion composition has a specific complex viscosity. Therefore, the temporary bonding composition has a certain tackiness and can shield the laser and has the effect of laser debonding. A method of packaging a device includes a device formed using a multilayer structure.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] TECHNICAL FIELD The present disclosure relates to temporary adhesive compositions, temporary adhesive layers, multi-layer structures and methods of packaging devices. [Background technology]

[0002] In conventional semiconductor wafer manufacturing methods, a laser debonding layer, a temporary adhesive layer, and a metal sacrificial layer are typically formed on a carrier wafer first, and then a device wafer is placed on the metal sacrificial layer (e.g., a titanium / copper layer) for bonding. The metal sacrificial layer can block excessive laser light from penetrating to the upper device wafer, protecting the device wafer from damage. The laser debonding layer is used to separate the carrier wafer and the device wafer. The conventional laser debonding layer, the temporary adhesive layer, and the metal sacrificial layer each have different compositions and require different processes to be formed, which results in long semiconductor wafer processing times and high processing costs. Summary of the Invention

[0003] The temporary adhesive layer of the present invention has a specific storage modulus after heating, thus allowing smooth release of the bonded device wafer after laser debonding.

[0004] The multilayer structure of the present invention includes the temporary adhesive layer. The temporary adhesive layer has a specific complex viscosity and therefore has good adhesive ability to bond to the device wafer. The multilayer structure is simple in construction and can be easily applied to packaging methods in different fields.

[0005] The temporary bonding composition of the present invention simultaneously provides laser shielding, laser debonding, and adhesive properties. The temporary bonding composition includes components having specific ratios. The black dye in the temporary bonding composition affects the light transmittance of the temporary bonding composition, blocking excessive laser light from penetrating the upper device wafer, thereby shielding and protecting the upper device wafer. The main resin in the temporary bonding composition has good fluidity at high temperatures, thereby providing excellent caulking ability to the device wafer. In addition, the main resin in the temporary bonding composition has the function of laser debonding. The main resin and other resins in the temporary bonding composition provide the temporary bonding composition with appropriate viscosity, thereby achieving the effect of adhering the carrier wafer and the device wafer.

[0006] The device packaging method of the present invention includes a device formed using the above multi-layer structure. Since the single-layer temporary adhesive layer of the present invention simultaneously has the effects of laser shielding, laser debonding, and providing adhesion, a device including the temporary adhesive layer can be obtained without complex processes, thereby shortening process time and reducing process costs.

[0007] At least one embodiment of the present invention is a temporary adhesive layer, the thickness of the temporary adhesive layer is 2 μm to 2000 μm, the light transmittance of the temporary adhesive layer at 300 nm to 1064 nm is 0.1% to 1%, and after heating the temporary adhesive layer at 50° C. to 300° C. for at least 10 minutes, the storage modulus of the temporary adhesive layer is at least 0.1 MPa, and the adhesion of the temporary adhesive layer to the substrate is 180 N / cm 2 To provide a temporary adhesive layer that is greater than

[0008] At least one embodiment of the present invention provides a multilayer structure comprising a first release layer, a second release layer, and a temporary adhesive layer disposed between the first release layer and the second release layer, the temporary adhesive layer having a first surface and a second surface disposed opposite each other, the first surface contacting the first release layer and the second surface contacting the second release layer, and the complex viscosity of the temporary adhesive layer being 940 Pa·s or less.

[0009] In at least one embodiment of the present invention, the temporary adhesive layer absorbs light at wavelengths of 308 nm to 1064 nm.

[0010] At least one embodiment of the present invention provides a temporary adhesive composition for forming the temporary adhesive layer, the temporary adhesive composition comprising, where the total weight of the temporary adhesive composition is 100 wt % (wt. %), 30 wt % to 50 wt % of a main resin selected from the group consisting of alkyd resins, phenolic resins, acrylic resins, and polyester resins, 17 wt % to 40 wt % of a polyhydrocarbyl resin, 0.1 wt % to 20 wt % of a black dye, 0.5 wt % to 4 wt % of an imidazole-based curing agent, 0.5 wt % to 5 wt % of an acid anhydride-based curing agent, and 3 wt % to 5 wt % of an epoxy resin, and the complex viscosity of the temporary adhesive composition is 940 Pa s or less.

[0011] In at least one embodiment of the present invention, the polyester resin has a hydroxyl number of at least 20 mg KOH / g.

[0012] In at least one embodiment of the present invention, the polyester resin has a molecular weight of at least 5000 g / mole.

[0013] In at least one embodiment of the present invention, the particle size of the black dye is between 10 nm and 50 nm.

[0014] In at least one embodiment of the present invention, the absorption wavelength of the black dye is between 300 nm and 1064 nm.

[0015] A method for packaging a device according to at least one embodiment of the present invention includes the steps of providing a first element, providing a second element, providing the multilayer structure including a first release layer, a second release layer, and a temporary adhesive layer, tearing the first release layer of the multilayer structure to expose a first surface of the temporary adhesive layer, and after tearing the first release layer, performing a first compression process to attach the first surface of the temporary adhesive layer to the first element, tearing the second release layer of the multilayer structure to expose a second surface of the temporary adhesive layer after performing the first compression process, and tearing the second release layer of the multilayer structure to expose a second surface of the temporary adhesive layer, and after tearing the second release layer, performing a second compression process to attach the second surface of the temporary adhesive layer to the second element, thereby obtaining a device.

[0016] In at least one embodiment of the present invention, the crimping pressure of the first crimping process is 0.5 kg / cm 2 ~100kg / cm 2 The compression temperature of the first compression process is 100° C. to 350° C., and the compression time of the first compression process is 10 seconds to 200 minutes.

[0017] In at least one embodiment of the present invention, the crimping pressure of the second crimping process is 0.5 kg / cm 2 ~100kg / cm 2 The compression temperature of the second compression process is 100° C. to 250° C., and the compression time of the second compression process is 10 seconds to 200 minutes. [Brief explanation of the drawings]

[0018] The various aspects of the present disclosure can be best understood based on the following detailed description and with reference to the drawings. It should be understood that, in accordance with standard industry practice, various features have not been drawn to scale. In fact, the sizes of various features may be arbitrarily increased or decreased for clarity. [Figure 1] FIG. 1 is a schematic diagram of a multi-layer structure according to some embodiments of the present disclosure. [Figure 2] 1 is a flowchart of a method for packaging a device according to some embodiments of the present disclosure. [Figure 3] 1A-1C are schematic diagrams of steps for packaging a first element and a second element according to some embodiments of the present disclosure. DETAILED DESCRIPTION OF THE INVENTION

[0019] The following disclosure provides many different embodiments or examples for implementing different features of the present disclosure. Below, specific embodiments of components and arrangements are described to simplify the disclosure. These are, of course, examples only and are not intended to be limiting. For example, in the following description, a first feature formed above or on a second feature may include an embodiment in which the first and second features are formed so as to be in direct contact with each other, or may include an embodiment in which another feature may be formed between the first and second features so that the first and second features are not in direct contact with each other.

[0020] Other spatially relative terms, such as "bottom," "below," "lower than," "top," "above," and similar terms, are used to simply describe the relationship of one element or feature to another element or feature in the drawings. The spatially relative terms cover the orientation depicted in the drawings, as well as other orientations of the device during use and operation. The device may have other orientations (rotated 90 degrees or at other orientations), and the spatially relative descriptions used herein may be correspondingly described.

[0021] Although terms such as "first" and "second" may be used herein to describe various elements, it should be understood that these elements should not be limited to these terms. These terms are used only to distinguish one element from another. For example, a first element can be referred to as a second element, and similarly, a second element can be referred to as a first element, without departing from the scope of the embodiment.

[0022] Although the methods of the present disclosure are described below using a series of operations or steps, the order in which these operations or steps are presented should not be construed as a limitation of the present disclosure. For example, some operations or steps may be performed in a different order and / or simultaneously with other steps. Furthermore, not all illustrated operations, steps, and / or features need to be performed to implement embodiments of the present disclosure. It should be noted that each operation or step described herein may include multiple sub-steps or operations.

[0023] The temporary adhesive layer of the present application simultaneously has the effects of laser shielding, laser debonding, and providing adhesiveness. As used herein, "laser shielding" refers to the temporary adhesive layer being able to block a portion of the laser light when the temporary adhesive layer is irradiated with the laser light, thereby protecting the device wafer from damage as it moves away from the laser light irradiated surface. As used herein, "laser debonding" refers to the temporary adhesive layer losing its viscosity through a chemical reaction after being irradiated with laser light, thereby separating the underlying carrier wafer and device wafer.

[0024] The temporary adhesive layer of the present application can be applied to the manufacturing or packaging of semiconductor devices or display devices. That is, when conventional metal sacrificial layers and laser debonding layers are not required, the single-layer temporary adhesive layer of the present application simultaneously provides laser shielding, laser debonding, and adhesive properties. In particular, compared to conventional methods for manufacturing semiconductor devices or display devices, the method of the present application does not require the separate formation of conventional metal sacrificial layers and laser debonding layers, thereby shortening process time and reducing process costs.

[0025] 1 is a schematic diagram of a multilayer structure 100 according to some embodiments of the present disclosure. The multilayer structure 100 includes a first release layer 110, a second release layer 120, and a temporary adhesive layer 130. The temporary adhesive layer 130 is disposed between the first release layer 110 and the second release layer 120. The temporary adhesive layer 130 has a first surface s1 and a second surface s2 disposed opposite each other. The first surface s1 of the temporary adhesive layer 130 contacts the first release layer 110, and the second surface s2 of the temporary adhesive layer 130 contacts the second release layer 120. The temporary adhesive layer 130 is sandwiched between the first release layer 110 and the second release layer 120.

[0026] In some embodiments, the thickness of the temporary adhesive layer 130 is 2 μm to 2000 μm, for example, 5, 10, 100, 150, 200, 250, 300, 500, 1000, 1500, or 1800 μm. If the thickness of the temporary adhesive layer 130 is less than 2 μm or more than 2000 μm, the temporary adhesive layer 130 cannot simultaneously provide laser shielding, laser debonding, and adhesive properties.

[0027] In some embodiments, the temporary adhesive layer 130 has a light transmittance of 0.1% to 1%, e.g., 0.3%, 0.5%, or 0.8%, at 300 nm to 1064 nm. If the temporary adhesive layer 130 has a light transmittance greater than 1%, it cannot protect the device wafer from damage. If the temporary adhesive layer 130 has a light transmittance less than 0.1%, the amount of black dye added is too high, resulting in high roughness, poor adhesion, and poor caulking ability when softened at high temperatures. The function of the black dye is described in detail below. Note that, as used herein, "caulking ability" refers to the ability to fill uneven structures (e.g., cutting paths) in a device wafer. Good caulking ability means that the temporary adhesive composition (described in detail below) can fill uneven structures in a device wafer.

[0028] In some embodiments, after the temporary adhesive layer 130 is heated at 50°C to 300°C for 10 minutes or more, the temporary adhesive layer 130 has a storage modulus of at least 0.1 MPa, e.g., 1, 5, 10, or 12 MPa. If the temporary adhesive layer 130 does not have a certain rigidity after being heated (e.g., pressed), the temporary adhesive layer 130 may flow (i.e., reflux) during laser irradiation and re-adhere to the device wafer, preventing the bonded device wafer from being peeled off. Therefore, if the storage modulus of the temporary adhesive layer 130 is less than 0.1 MPa, the temporary adhesive layer 130 may not peel off smoothly from the device wafer after laser irradiation, and residual adhesive may remain stuck to the device wafer.

[0029] In some embodiments, the adhesion of the temporary adhesive layer 130 to the substrate is 180 N / cm 2 The adhesion of the temporary adhesive layer 130 to the substrate is greater than 180 N / cm 2 If the adhesive strength of the temporary adhesive layer 130 to the substrate is less than 180 N / cm, the device wafer and the carrier wafer cannot be sufficiently adhered to each other. 2 In some embodiments, the adhesion of the temporary adhesive layer 130 to a copper (Cu) substrate is greater than 180 N / cm. 2 greater than, for example, about 300 N / cm 2 In some embodiments, the adhesion of the temporary adhesive layer 130 to the glass substrate is 180 N / cm 2 greater than, for example, about 193 N / cm 2 In some embodiments, the adhesion of the temporary adhesive layer 130 to a polyimide (PI) substrate is 180 N / cm 2 greater than, for example, about 358 N / cm 2 In some embodiments, the adhesion of the temporary adhesive layer 130 to the silicon substrate is 180 N / cm 2 greater than, for example, about 268 N / cm 2 is.

[0030] In some embodiments, the complex viscosity of the temporary adhesive layer 130 is 940 Pa·s or less, such as 20, 30, 100, 200, 300, 400, 500, 600, 700, 800, or 900 Pa·s. In one example, a complex viscosity of less than 500 Pa·s can fill 2 micron linewidths on a device wafer. A complex viscosity of greater than 940 Pa·s can result in poor coking ability to the device wafer, and thus inability to fill the uneven structures of the device wafer and, therefore, inability to bond properly to the device wafer.

[0031] In some embodiments, the glass transition temperature (Tg) of the temporary adhesive layer 130 is between 80°C and 200°C. If the glass transition temperature is lower than 80°C, the viscosity of the temporary adhesive layer 130 may be too high, which may be disadvantageous for manufacturing processes such as alignment. If the glass transition temperature is higher than 200°C, the fluidity of the temporary adhesive layer 130 may be poor when softened at high temperatures, resulting in poor caulking ability, which may prevent the temporary adhesive layer 130 from adhering the device wafer and the carrier wafer.

[0032] In some embodiments, the thermal decomposition temperature (Td1) of the temporary adhesive layer 130 at 1% weight loss is greater than 330° C., such as 333° C. If Td1 is less than 330° C., the layer will decompose during processing (e.g., re-furnace soldering, chemical vapor deposition) due to insufficient heat resistance, resulting in plate rupture.

[0033] In some embodiments, the temporary adhesive layer 130 has an absorption wavelength of 308 nm to 1064 nm, such as 355 nm or 532 nm. When the absorption wavelength of the temporary adhesive layer 130 is within the above range, the temporary adhesive layer 130 can simultaneously have the effects of laser blocking, laser debonding, and providing adhesiveness.

[0034] The present invention provides a temporary adhesive composition for forming the temporary adhesive layer 130. The temporary adhesive composition contains 30 to 50% by weight of a main resin, 17 to 40% by weight of a polyhydrocarbyl resin, 0.1 to 20% by weight of a black dye, 0.5 to 4% by weight of an imidazole-based curing agent, 0.5 to 5% by weight of an acid anhydride-based curing agent, and 3 to 5% by weight of an epoxy resin, with the total weight of the temporary adhesive composition being 100% by weight.

[0035] In some embodiments, the primary resin is selected from the group consisting of alkyd resin, phenolic resin, acrylic resin, and polyester resin. In some embodiments, the acrylic resin may be, for example, pentaerythritol triacrylate (Changxing Materials, brand name: ETERMER 235). In some embodiments, the polyester resin may be, for example, a benzene ring-containing polyester resin (Anfeng, brand name: HE558 / 40 (abbreviated as "HE-558" in Tables 1 to 3), molecular weight: 18,000), a polyester resin (Anfeng, brand name: HE554 / 40 (abbreviated as "HE-554" in Table 1)), or a polyester polyol resin (Sanyo Chemical, brand name: SANNIX KC-229 (abbreviated as "KC-229" in Table 1), molecular weight: 5,000) In some embodiments, the polyester resin has a hydroxyl value of at least 20 mg KOH / g, e.g., 25, 30, 35, or 40 mg KOH / g. In some embodiments, the primary resin comprises a compound having a benzene ring structure. The benzene ring in the primary resin has an absorption peak in the ultraviolet range (e.g., 220 nm to 400 nm). When the benzene ring absorbs energy, it generates free radicals that cleave the bonds of the functional groups, thereby achieving the laser debonding effect. Meanwhile, at high laser temperatures, the continuous phase of the primary resin is weakened and locally decomposed, thereby achieving the laser debonding effect. In other words, the primary resin in the temporary bonding composition has a laser debonding effect.

[0036] In some embodiments, the primary resin is a thermoplastic resin. The primary resin of the present application has good high-temperature fluidity, which allows for good caulking ability to device wafers, thereby enabling the temporary bonding composition to be suitably bonded to device wafers. In some embodiments, the complex viscosity of the temporary bonding composition is 940 Pa·s or less, for example, 20, 30, 100, 200, 300, 400, 500, 600, 700, 800, or 900 Pa·s. As used herein, "high-temperature fluidity" means that the temporary bonding composition has a certain complex viscosity and a certain degree of fluidity at high temperatures.

[0037] In some embodiments, the molecular weight of the polyester resin is at least 5,000 g / mole, for example, about 15,000 g / mole or about 20,000 g / mole. When the molecular weight of the polyester resin is less than 5,000 g / mole, the complex viscosity of the temporary bonding composition at high temperatures is inversely related to the molecular weight, which is unfavorable for caulking wafer structures with narrow line widths and results in poor adhesion of the temporary bonding composition, making it unable to properly bond the carrier wafer and the device wafer. Furthermore, when the molecular weight of the polyester resin is less than 5,000 g / mole, the glass transition temperature (Tg) is high, requiring higher temperature compression conditions during the process, which can easily cause wafer warpage due to mismatch in thermal expansion coefficients.

[0038] In some embodiments, the temporary bonding composition contains 35, 40, or 45 wt. % of the main resin. If the main resin content is less than 30 wt. %, the temporary bonding composition is too rigid, resulting in insufficient adhesion between the temporary bonding composition and the device wafer or carrier wafer, making them prone to separation during processing. Its high-temperature fluidity is also poor, making it unsuitable for filling the uneven structure of the device wafer. If the main resin content is more than 50 wt. %, the temporary bonding composition adheres to the periphery of the device wafer, making it impossible to separate the device wafer from the carrier wafer.

[0039] The polyhydrocarbyl resin in the temporary adhesive composition provides rigidity to the temporary adhesive composition after the crosslinking reaction of the material, thereby improving the dimensional stability of the manufactured temporary adhesive layer after it is pressed during the process. In some embodiments, the polyhydrocarbyl resin has a functional group (e.g., an isocyanate functional group) that reacts with the hydroxyl group (—OH group) of the main resin to form a polyurethane bond, making it reactive with alkaline cleaning solutions and easy to clean after the laser debonding process. In some embodiments, the polyhydrocarbyl resin may be, for example, an aliphatic isocyanate (company name: Anfeng, brand name: REXIN 1973 / 900). In some embodiments, the etching rate of the temporary adhesive layer of the present invention in alkaline cleaning solutions is 2.5 μm / min to 5.1 μm / min. In some embodiments, the temporary adhesive composition includes 20, 25, 30, or 35 wt. % polyhydrocarbyl resin. When the polyhydrocarbyl resin content is less than 17 wt. %, the etching rate of the temporary adhesive layer in alkaline cleaning solutions is significantly reduced. If the content of the polyhydrocarbyl resin is greater than 40% by weight, the complex viscosity of the temporary bonding composition at high temperatures will be too high, thereby affecting the caulking ability to the device wafer and the adhesion of the temporary adhesive layer to the substrate (e.g., copper substrate).

[0040] The black dye in the temporary adhesive composition provides the temporary adhesive layer with a laser shielding function, thereby making the light transmittance of the temporary adhesive layer 0.1% to 1%. Specifically, the temporary adhesive layer is used to bond a carrier wafer and an equipment wafer. That is, the temporary adhesive layer is provided between the carrier wafer and the equipment wafer. The structure including the carrier wafer, temporary adhesive layer, and equipment wafer is used to process the equipment wafer. Next, after the equipment wafer processing is completed, laser light irradiation (i.e., laser debonding) must be performed from the carrier wafer side to obtain the separated equipment wafer. At this time, the temporary adhesive layer containing the black dye can protect the equipment wafer and prevent it from being damaged by laser irradiation.

[0041] The addition of a black dye increases the roughness of the temporary adhesive composition, reducing the contact area between the temporary adhesive composition and the substrate (e.g., a carrier wafer), and further affecting the adhesiveness of the temporary adhesive layer. In other words, the shielding ability of the black dye and the roughness are inversely proportional to each other. Specifically, the greater the amount of black dye added, the better the shielding ability for the device wafer. However, the higher the roughness of the temporary adhesive composition, the worse the adhesiveness of the temporary adhesive composition to the device wafer. Conversely, the smaller the amount of black dye added, the worse the shielding ability for the device wafer. However, the lower the roughness of the temporary adhesive composition, the better the adhesiveness of the temporary adhesive composition to the device wafer. The addition of a black dye also affects the caulking ability of the temporary adhesive composition when softened at high temperatures. Specifically, the caulking ability of the temporary adhesive composition when softened at high temperatures decreases as the amount of black dye added increases. Therefore, in order for the temporary adhesive composition to have appropriate adhesiveness and caulking ability, it is necessary to add an appropriate amount of black dye.

[0042] In some embodiments, the temporary bonding composition contains 0.2, 0.5, 0.8, 1, 3.5, 3.9, 4, 6, 8, 10, 12, 14, 16, or 18 wt % of black dye. When the content of black dye is less than 0.1 wt %, the shielding ability of the temporary bonding layer made with the temporary bonding composition is insufficient to protect the device wafer from damage. When the content of black dye is more than 20 wt %, the device wafer can be protected from damage, but the roughness of the temporary bonding composition increases, reducing the adhesion of the temporary bonding layer to the substrate, thereby preventing the device wafer and the carrier wafer from adhering sufficiently. It also affects the total thickness variation (TTV) of the temporary bonding layer, i.e., flatness, which is disadvantageous in operation (e.g., increasing the risk of misalignment of crystal grains).

[0043] In some embodiments, the black dye may be, for example, carbon black. In some embodiments, the particle size of the black dye is 10 nm to 50 nm, for example, 20, 30, or 40 nm. If the particle size of the black dye is smaller than 10 nm, it has a large surface area, which causes aggregation problems when dispersed in a temporary bonding composition. If the particle size of the black dye is larger than 50 nm, it causes sedimentation problems due to the increased effect of gravity caused by the increased particle size.

[0044] In some embodiments, the absorption wavelength of the black dye is 300 nm to 1064 nm. When the absorption wavelength of the black dye is in the above range, the temporary bonding composition can simultaneously have the effects of laser shielding, laser debonding, and providing adhesiveness.

[0045] The addition of an imidazole-based curing agent causes a cross-linking reaction with the epoxy resin in the temporary adhesive composition, improving the surface adhesion (g / cm) in the incompletely cross-linked (B-Stage) state. 2 ) can be adjusted. In some embodiments, the temporary bonding composition contains 0.8, 1, 2, or 3 wt % of an imidazole-based curing agent. When the content of the imidazole-based curing agent is less than 0.5 wt %, the temporary bonding composition before aging has high tack, and is prone to sticking if inadvertently touched when aligning the device wafer and the carrier wafer during processing, making it more difficult to handle. When the content of the imidazole-based curing agent is more than 4 wt %, the excess imidazole-based curing agent causes the thermal decomposition temperature of the temporary bonding layer to be lower than 330°C, and the imidazole-based curing agent that is not involved in the reaction will gasify during high-temperature processing, causing the plate to burst.

[0046] The addition of an acid anhydride curing agent can increase the degree of crosslinking of the temporary adhesive composition, thereby improving its heat resistance. In some embodiments, the temporary adhesive composition contains 0.8, 1, 2, 3, or 4 wt. % of the acid anhydride curing agent. If the content of the acid anhydride curing agent is less than 0.5 wt. %, the degree of crosslinking of the temporary adhesive composition is insufficient, making the plate more likely to burst during processing. If the content of the acid anhydride curing agent is more than 5 wt. %, the excess acid anhydride curing agent is not involved in the reaction, and the thermal decomposition temperature of the temporary adhesive layer is lower than 330°C.

[0047] The addition of an epoxy resin can adjust the surface tackiness of the temporary adhesive composition before it has fully matured and reduce the fluidity of the temporary adhesive composition after it has matured. In some embodiments, the temporary adhesive composition contains 3.5, 4, or 4.5 wt. % of an epoxy resin. If the epoxy resin content is less than 3 wt. %, the temporary adhesive composition is too viscous before it matures, and if the device wafer and the carrier wafer are inadvertently brought into contact during alignment during processing, they tend to stick together, making handling more difficult. Furthermore, if the amount of epoxy resin added is insufficient, the heat generated during processing causes fluidity in the temporary adhesive layer after it matures, making it difficult to separate the carrier wafer and the device wafer. If the epoxy resin content is greater than 5 wt. %, the thermal decomposition temperature of the temporary adhesive layer is less than 330°C, resulting in insufficient heat resistance during processing, resulting in plate rupture.

[0048] See Figure 1. In some embodiments, the first surface s1 of the temporary adhesive layer 130 is in direct contact with the first release layer 110, and the second surface s2 of the temporary adhesive layer 130 is in direct contact with the second release layer 120. That is, there is no other layer structure between the temporary adhesive layer 130 and the first release layer 110, and there is no other layer structure between the temporary adhesive layer 130 and the second release layer 120.

[0049] Figure 2 is a flowchart of a method 200 for packaging a device according to some embodiments of the present disclosure. Figures 3A-3C are schematic diagrams of steps for packaging a first element and a second element according to some embodiments of the present disclosure.

[0050] The device packaging method 200 includes the following steps. See step 210 of FIG. 2 and FIG. 3A. Provide a first element 310. The first element 310 may be, for example, a carrier wafer. For example, the carrier wafer may be, but is not limited to, a glass substrate, a silicon substrate, an organic substrate, or an inorganic substrate.

[0051] See step 220 of FIG. 2 and FIG. 3C. A second element 320 is provided. The second element 320 may be, for example, a device wafer. For example, the device wafer may be, but is not limited to, an integrated circuit substrate with a solid molding encapsulant or an integrated circuit substrate with an arrayed copper pillar structure. The solid molding encapsulant may be, for example, an epoxy molding compound (EMC).

[0052] See step 230 of Figure 2 and Figure 1. A multi-layer structure 100 is provided.

[0053] See step 240 of Figure 2 and Figure 1. The first release layer 110 of the multi-layer structure 100 is torn to expose the first surface s1 of the temporary adhesive layer 130.

[0054] See step 250 in Figure 2 and Figure 1. After the first release layer 110 is torn off, a first pressing process is performed to attach the first surface s1 of the temporary adhesive layer 130 to the first element 310 (see Figure 3A).

[0055] In some embodiments, the crimping pressure of the first crimping process is 0.5 kg / cm 2 ~100kg / cm 2 , for example 1, 10, 20, 50 or 80 kg / cm 2In some embodiments, the bonding temperature of the first bonding process is 100°C to 350°C, for example, 150°C, 200°C, 250°C, or 300°C. In some embodiments, the bonding time of the first bonding process is 10 seconds to 200 minutes, for example, 30 seconds, 1 minute, 10 minutes, 50 minutes, 100 minutes, or 150 minutes. When the bonding pressure, bonding temperature, and bonding time are within the above ranges, the temporary adhesive layer 130 can be adhered to the first element 310, and the temporary adhesive layer 130 and the first element 310 will not be separated from each other due to gas expansion in the high-temperature process, even if a gap exists between them due to insufficient flatness or uneven bonding.

[0056] See step 260 of Figure 2, Figures 1 and 3B. After performing the first pressing process, the second release layer 120 of the multi-layer structure 100 is torn to expose the second surface s2 of the temporary adhesive layer 130.

[0057] See steps 270 and 280 in Figure 2, Figure 1 and Figure 3C. After tearing the second release layer 120, a second pressing process is performed to attach the second surface s2 of the temporary adhesive layer 130 to the second element 320 to obtain a device. As can be seen, the device has a sandwich structure in which the temporary adhesive layer 130 is sandwiched between the first element 310 and the second element 320, and the temporary adhesive layer 130 is a single-layer temporary adhesive layer, as shown in Figure 3C. The "device" herein may be, for example, a semiconductor device or a display device.

[0058] In some embodiments, the crimping pressure of the second crimping process is 0.5 kg / cm 2 ~100kg / cm 2 , for example 1, 10, 20, 50 or 80 kg / cm 2In some embodiments, the bonding temperature of the second bonding process is 100°C to 250°C, for example, 150°C or 200°C. In some embodiments, the bonding time of the second bonding process is 10 seconds to 200 minutes, for example, 30 seconds, 1 minute, 10 minutes, 50 minutes, 100 minutes, or 150 minutes. When the bonding pressure, bonding temperature, and bonding time are within the above ranges, the temporary adhesive layer 130 can be adhered to the second element 320, and the temporary adhesive layer 130 and the second element 320 will not be separated from each other due to gas expansion in the high-temperature process, even if gaps exist between them due to insufficient flatness or uneven bonding.

[0059] In some embodiments, after forming the device of Figure 3C, wafer fabrication may optionally be performed on the second element 320. After wafer fabrication is complete, the device of Figure 3C may optionally be subjected to a laser debonding step to separate the second element 320 from the device. As used herein, "laser debonding" refers to irradiating the first element 310 side of the device with a laser to sever the bond of the temporary adhesive layer 130, thereby separating the second element 320.

[0060] 1 and 2, the temporary adhesive layer 130 of the present application can be applied to the first element 310 by lamination. However, in other embodiments, the temporary adhesive composition of the present application can be coated onto the first element 310 using spin coating.

[0061] See Tables 1 to 3 below. Experimental Examples 1 to 18 and Comparative Examples 1 to 12 are used to illustrate the application of the present invention, but are not intended to limit the present invention, and any person skilled in the art may make various changes and modifications without departing from the spirit and scope of the present invention.

[0062] Experimental Example 1

[0063] In Experimental Example 1, the temporary adhesive composition contained 30% by weight of a main resin, 25% by weight of a polyhydrocarbyl resin, 10% by weight of a black dye, 4% by weight of an epoxy resin, 1% by weight of an imidazole-based curing agent, and 1% by weight of an acid anhydride-based curing agent, and the main resin was HE-558 and the black dye was carbon black. The evaluation results of the obtained temporary adhesive composition are shown in Table 1 below.

[0064] Experimental Examples 2 to 18 and Comparative Examples 1 to 12

[0065] See Tables 1, 2, and 3 below for the temporary adhesive compositions and evaluation results of Experimental Examples 2 to 18 and Comparative Examples 1 to 12. Table 3 lists the particle sizes of the black dyes. The black dye in the compositions of Experimental Examples 2 to 18 and Comparative Examples 1 to 12 was all carbon black.

[0066] Evaluation method

[0067] 1. Can debonding be done after laser?

[0068] Whether or not debonding after laser as referred to in the present invention is possible was determined by testing using a diode-pumped solid-state laser (DPSS laser) with a wavelength of 355 nm, with the distance between the laser source and the substrate fixed at 1500 mm, a spot size of 65 μm, a pitch of 48 μm, and a power of 2.0 W, to determine whether or not the temporary adhesive compositions of Experimental Examples 1 to 15 and Comparative Examples 1 to 10 were debondable after laser, and the measurement results are shown in Tables 1 and 2 below.

[0069] 2. Whether the device wafer is damaged after laser

[0070] To determine whether the device wafer was damaged after the laser treatment in the present invention, the surface of the device wafer was observed with an optical microscope after laser debonding was performed using the above method. The measurement results for Experimental Examples 1 to 18 and Comparative Examples 1 to 12 are shown in Tables 1 to 3 below.

[0071] 3. Testing adhesion to Cu substrate

[0072] The adhesion to a Cu substrate referred to in the present invention is measured in accordance with MIL-STD-883 (Method 2027) by using a rivet to measure the adhesion of the temporary adhesive composition to the surface of a copper substrate. A 4cm x 4cm vapor-deposited copper substrate was sheared, and a film layer made with the temporary adhesive composition was attached to the copper substrate using a vacuum rapid press to produce a sample. A rivet was then fixed to the surface of the sample using a jig, and the sample was placed in an oven at 160°C for 1 hour to soften the epoxy adhesive on the rivet surface. The jig was then removed, and the condition required for the rivet to separate the temporary adhesive composition from the copper substrate surface was measured using a tension of 4.0 N / sec to measure the adhesion of the temporary adhesive compositions of Experimental Examples 1 to 18 and Comparative Examples 1 to 12 to the Cu substrate. The unit is N / cm. 2 The measurement results are shown in Tables 1 to 3 below.

[0073] 4. Testing the etching rate of alkaline cleaning solutions

[0074] The etching rate in the alkaline cleaning solution referred to in the present invention was measured by laminating the temporary adhesive layer onto a glass substrate using a vacuum high-speed press, placing it in an oxygen-free oven to completely mature it, and then measuring the etching rate in the alkaline cleaning solution of the temporary adhesive compositions of Experimental Examples 1 to 15 and Comparative Examples 1 to 10 at a temperature of 60°C using an alkaline cleaning solution containing 2.38% TMAH, the unit being μm / min, and the measurement results are shown in Tables 1 and 2 below.

[0075] 5. Complex viscosity test

[0076] The complex viscosity referred to here in the present invention was measured for the temporary bonding compositions of Experimental Examples 1 to 15 and Comparative Examples 1 to 10 using an HR-2 rotational rheometer (brand: TA) according to the ASTM D4440 method, and the unit is Pa.s. The measurement results are shown in Tables 1 and 2 below.

[0077] 6. Testing surface adhesion before full maturation

[0078] The surface tackiness before complete aging referred to in the present invention is measured in units of g / cm by testing the surface tackiness of the temporary adhesive composition and the laminating film (e.g., release film) at an angle of 180° in accordance with the ASTM D3330 test method, and the surface tackiness of the temporary adhesive compositions of Experimental Examples 1 to 15 and Comparative Examples 1 to 10 before complete aging is measured. 2 The measurement results are shown in Tables 1 and 2 below.

[0079] 7.1% weight loss thermal decomposition temperature (Td1) test

[0080] The thermal decomposition temperature at 1% weight loss in the present invention was analyzed using a thermogravimetric analyzer (TGA, brand: TA, model: Q-500) according to the ASTM E2550-21 method. The sample weight range was fixed at 5 to 10 mg, and tests were conducted in a nitrogen gas (N2) atmosphere at a heating rate of 10°C / min to measure the thermal decomposition temperature at 1% weight loss for the temporary bonding compositions of Experimental Examples 1 to 15 and Comparative Examples 1 to 10. The unit is °C, and the measurement results are shown in Tables 1 and 2 below.

[0081] [Table 1(1)] [Table 1(2)]

[0082] [Table 2]

[0083] [Table 3]

[0084] As can be seen from Comparative Example 1, when the content of the main resin was less than 30 wt%, the adhesion of the temporary adhesive layer formed from the temporary adhesive composition to the copper substrate was too low, and the device wafer and carrier wafer could not be sufficiently bonded. Furthermore, the content of the main resin was insufficient, and the complex viscosity of the temporary adhesive composition was too high, resulting in poor caulking ability. As can be seen from Comparative Example 2, when the content of the main resin was more than 50 wt%, the temporary adhesive composition adhered to the periphery of the device wafer, and separation of the device wafer and carrier wafer was still impossible even after the laser debonding process.

[0085] As can be seen from Comparative Example 3, when the content of the polyhydrocarbyl resin is less than 17% by weight, the etching rate of the temporary adhesive composition is slow, i.e., it is difficult to remove with an alkaline solution. As can be seen from Comparative Example 4, when the content of the polyhydrocarbyl resin is more than 40% by weight, the complex viscosity of the temporary adhesive composition at high temperatures is too high, which results in a deterioration in the coking ability to the device wafer and the adhesion of the temporary adhesive layer to the copper substrate (e.g., 180 N / cm 2 (smaller than

[0086] As can be seen from Comparative Example 5, when the content of the epoxy resin is less than 3% by weight, the adhesive strength of the temporary adhesive composition before aging is too high (for example, 2.3 g / cm 2 The temperature was higher than 5 wt. %, and careless contact between the device wafer and carrier wafer during alignment during the process led to adhesion, making operation more difficult. Furthermore, if the amount of epoxy resin added was insufficient, the heat generated during the process caused the temporary bonding composition to become fluid after aging, and even after the laser debonding process, the carrier wafer and device wafer re-adhered and could not be separated. As can be seen from Comparative Example 6, when the epoxy resin content was greater than 5 wt. %, the excess epoxy resin small molecules could not completely react with the curing agent, resulting in a thermal decomposition temperature below 330°C, which made the plate prone to bursting during the process.

[0087] As can be seen from Comparative Examples 7 and 9, when the content of the imidazole-based curing agent is less than 0.5% by weight or the content of the acid anhydride-based curing agent is less than 0.5% by weight, the temporary bonding composition before aging has high surface tack (for example, 2.3 g / cm 2 The adhesive composition has a thermal decomposition temperature of less than 330°C, which is likely to cause plate rupture during processing due to inadvertent contact between the device wafer and carrier wafer during alignment.

[0088] As can be seen from Comparative Examples 8 and 10, when the content of the imidazole curing agent was greater than 4% by weight or the content of the acid anhydride curing agent was greater than 5% by weight, the thermal decomposition temperature of the temporary adhesive layer was lower than 330°C due to the excess imidazole curing agent or acid anhydride curing agent. In addition, the imidazole curing agent or acid anhydride curing agent that was not involved in the reaction in the temporary adhesive composition gasified during the high-temperature process, causing the plate to burst.

[0089] As can be seen from Comparative Example 11, when the content of the black dye is less than 0.1 wt%, the shielding ability of the temporary adhesive composition is insufficient, causing damage to the device wafer after laser debonding. As can be seen from Comparative Example 12, when the content of the black dye is more than 20 wt%, the device wafer can be protected from damage, but the roughness of the temporary adhesive composition is increased, reducing the adhesion of the temporary adhesive layer to the substrate.

[0090] As described above, the temporary adhesive layer according to the present disclosure simultaneously functions as a laser shield, a laser debonding layer, and adhesiveness. Therefore, compared to conventional methods for manufacturing semiconductor devices or display devices, the method according to the present disclosure does not require the separate formation of a metal sacrificial layer and a laser debonding layer, thereby shortening process time and reducing process costs.

[0091] The foregoing summary of the features of several embodiments will enable those skilled in the art to better understand the state of the present disclosure. Those skilled in the art should appreciate that this disclosure may readily be used as a basis for designing or modifying other processes and structures to carry out the same purposes and / or achieve the same advantages of the embodiments described herein. Those skilled in the art should also recognize that such equivalent structures do not depart from the spirit and scope of the present disclosure, and that various changes, substitutions, and alterations may be made thereto without departing from the spirit and scope of the present disclosure. [Explanation of symbols]

[0092] 100: Multilayer structure 110: First release layer 120:Second release layer 130: Temporary adhesive layer 200: Method 210, 220, 230, 240, 250, 260, 270, 280: Step 310: First element 320: Second element s1: 1st surface s2: 2nd surface

Claims

1. A temporary adhesive layer, the thickness of the temporary adhesive layer is 2 μm to 2000 μm, the light transmittance of the temporary adhesive layer at 300 nm to 1064 nm is 0.1% to 1%, and after heating the temporary adhesive layer at 50 ° C to 300 ° C for at least 10 minutes, the storage modulus of the temporary adhesive layer is at least 0.1 MPa, and the adhesion of the temporary adhesive layer to the substrate is 180 N / cm ２ A temporary adhesive layer larger than

2. A multi-layer structure, A first release layer; A second release layer; The temporary adhesive layer according to claim 1, wherein the temporary adhesive layer is provided between the first release layer and the second release layer, has a first surface and a second surface that are opposed to each other, the first surface contacts the first release layer, the second surface contacts the second release layer, and has a complex viscosity of 940 Pa s or less; A multi-layer structure including:

3. The multilayer structure of claim 2, wherein the temporary adhesive layer absorbs light at wavelengths between 308 nm and 1064 nm.

4. 2. A temporary adhesive composition for forming the temporary adhesive layer according to claim 1, wherein the total weight of the temporary adhesive composition is 100% by weight, a primary resin comprising 30% to 50% by weight and selected from the group consisting of alkyd resins, phenolic resins, acrylic resins, and polyester resins; 17% to 40% by weight of a polyhydrocarbyl resin; 0.1% to 20% by weight of a black dye; 0.5% to 4% by weight of an imidazole-based curing agent; an acid anhydride curing agent in an amount of 0.5% by weight to 5% by weight; an epoxy resin comprising 3% to 5% by weight; The temporary bonding composition has a complex viscosity of 940 Pa·s or less.

5. 5. The temporary bonding composition of claim 4, wherein the polyester resin has a hydroxyl number of at least 20 mg KOH / g.

6. The temporary bonding composition according to claim 4 , wherein the polyester resin has a molecular weight of at least 5000 g / mole.

7. The temporary bonding composition according to claim 4, wherein the particle size of the black dye is 10 nm to 50 nm.

8. The temporary bonding composition according to claim 4, wherein the black dye has an absorption wavelength of 300 nm to 1064 nm.

9. 1. A method of packaging a device, comprising: providing a first element; providing a second element; Providing a multi-layer structure according to claim 2; tearing the first release layer of the multi-layer structure to expose the first surface of the temporary adhesive layer; After tearing the first release layer, performing a first pressing process to bond the first surface of the temporary adhesive layer onto the first element; After performing the first pressing process, tearing the second release layer of the multi-layer structure to expose the second surface of the temporary adhesive layer; After tearing the second release layer, performing a second pressing process to attach the second surface of the temporary adhesive layer to the second element to obtain the device; A method of packaging a device, comprising:

10. The pressure of the first crimping process is 0.5 kg / cm ２ ~100 kg / cm ２ The device packaging method according to claim 9, wherein the first compression process has a compression temperature of 100°C to 350°C, and a compression time of the first compression process of 10 seconds to 200 minutes.

11. The pressure of the second crimping process is 0.5 kg / cm ２ ~100 kg / cm ２ The device packaging method according to claim 9, wherein the compression temperature of the second compression process is 100°C to 250°C, and the compression time of the second compression process is 10 seconds to 200 minutes.

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