Cluster tool, system, and method having one or more pressure stabilization chambers
The cluster tool system with pressure stabilization chambers enhances epitaxial growth rates by performing cleaning and deposition processes at different pressures, achieving reduced contaminants and defects, and maintaining operational flexibility.
Patent Information
- Application Number
- JP2025154876
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2021-09-03
- Filing Date
- 2025-09-18
- Publication Date
- 2026-01-14
AI Technical Summary
Existing substrate processing technologies face limitations in epitaxial growth rates, which can be hindered by increased contaminants and performance issues when attempting to enhance growth rates.
A cluster tool system with pressure stabilization chambers facilitates epitaxial deposition by performing cleaning processes at a first pressure and epitaxial deposition at atmospheric pressure, using a two-mainframe configuration with integrated pressure stabilization to transfer substrates between chambers without exposing them to ambient environments.
The system achieves higher epitaxial growth rates with reduced substrate contaminants and defects, while maintaining operational flexibility and consistency, reducing processing delays and costs.
Smart Images
Figure 2026004352000001_ABST
Abstract
Description
[Technical Field]
[0001] FIELD OF THE DISCLOSURE
[0001] Embodiments of the present disclosure generally relate to cluster tools, systems, and methods that include one or more pressure stabilization chambers. [Background technology]
[0002]
[0002] During substrate processing, the growth rate of an epitaxial process can be limited, and attempts to increase the growth rate can increase contaminants on the substrate or otherwise hinder the performance of devices formed with the processed substrate.
[0003]
[0003] Therefore, there is a need for improved apparatus, systems, and methods that facilitate increased epitaxial growth rates. Summary of the Invention
[0004]
[0004] Embodiments of the present disclosure generally relate to cluster tools, systems, and methods having one or more pressure stabilization chambers. In one aspect of the present disclosure, a cleaning process is performed in a cleaning chamber at a first pressure, and an epitaxial deposition process is performed in an epitaxial deposition chamber at atmospheric pressure and a temperature, where the atmospheric pressure is greater than the first pressure.
[0005] In one embodiment, a cluster tool suitable for processing semiconductor substrates includes a first mainframe, one or more process chambers mounted on the first mainframe, and a second mainframe coupled to the first mainframe. The one or more process chambers are configured to perform a process step at a first pressure less than 700 Torr. The cluster tool includes one or more epitaxial deposition chambers coupled to the second mainframe. The one or more epitaxial deposition chambers are configured to perform an epitaxial deposition step at atmospheric pressure in the range of 700 Torr to 800 Torr.
[0006] In one embodiment, a method for processing a substrate includes placing a substrate in a factory interface and transferring the substrate from the factory interface to a first processing space of a cleaning chamber. The method includes performing a cleaning process on the substrate in the cleaning chamber while maintaining the first processing space at a first pressure to remove native oxide from the substrate. The first pressure is less than 700 Torr. The method includes maintaining a pressure in a pressure stabilization chamber at the first pressure and transferring the substrate from the cleaning chamber to the pressure stabilization chamber through a first door of the pressure stabilization chamber. The method includes closing the first door and increasing the pressure in the pressure stabilization chamber to atmospheric pressure in the range of 700 Torr to 800 Torr. The method includes opening a second door of the pressure stabilization chamber and transferring the substrate from the pressure stabilization chamber to a second processing space of an epitaxial deposition chamber. The method includes performing an epitaxial deposition process on the substrate while maintaining the second processing space at atmospheric pressure.
[0007] In one embodiment, a method for processing a substrate includes placing a substrate in a factory interface and transferring the substrate from the factory interface to a first processing space of a first epitaxial deposition chamber. The method includes performing a first epitaxial deposition process on the substrate in the first epitaxial deposition chamber while maintaining the first processing space at a first pressure. The first pressure is less than 700 Torr. The method includes maintaining a pressure in a pressure stabilization chamber at the first pressure and transferring the substrate from the first epitaxial deposition chamber to the pressure stabilization chamber through a first door of the pressure stabilization chamber. The method includes closing the first door and increasing the pressure in the pressure stabilization chamber to atmospheric pressure within a range of 700 Torr to 800 Torr. The method includes opening a second door of the pressure stabilization chamber and transferring the substrate from the pressure stabilization chamber to a second processing space of a second epitaxial deposition chamber. The method includes performing a second epitaxial deposition step on the substrate while maintaining the second processing space at atmospheric pressure.
[0008]
[0008] So that the features of the present disclosure described above may be understood in detail, a more particular description of the present disclosure briefly summarized above may be had by reference to several embodiments, some of which are illustrated in the accompanying drawings. It should be noted, however, that the accompanying drawings depict only exemplary embodiments and therefore should not be considered as limiting the scope thereof, and that the present disclosure may admit of other equally effective embodiments. [Brief explanation of the drawings]
[0009] [Figure 1] 1 is a schematic top view of a system for processing a substrate according to one embodiment. [Figure 2]
[0010] 1 is a schematic cross-sectional view of a processing chamber according to one embodiment. [Figure 3]
[0011] 1 is a schematic cross-sectional view of a deposition chamber according to one embodiment. [Figure 4]
[0012] 1 is a schematic flow diagram of a method for processing a substrate according to one embodiment. DETAILED DESCRIPTION OF THE INVENTION
[0010]
[0013] For ease of understanding, wherever possible, the same reference numerals have been used to designate identical elements common to the figures. It is believed that elements and features of one embodiment may be beneficially incorporated in multiple other embodiments without further recitation.
[0011]
[0014] Embodiments of the present disclosure generally relate to cluster tools, systems, and methods that include one or more pressure stabilization chambers. In one aspect of the disclosure, a cleaning process is performed in a cleaning chamber at a first pressure, and an epitaxial deposition process is performed in an epitaxial deposition chamber at atmospheric pressure and a temperature, where the atmospheric pressure is greater than the first pressure and the temperature is in the range of 400 to 1200 degrees Celsius.
[0012]
[0015] The present disclosure contemplates that terms such as "couples," "coupling," "coupled," and the like may include, but are not limited to, welding, an interference fit, and / or fastening using bolts, threaded connections, pins, screws, and the like. The present disclosure contemplates that terms such as "couples," "coupling," "coupled," and the like may include, but are not limited to, integral formation. The present disclosure contemplates that terms such as "couples," "coupling," "coupled," and the like may include, but are not limited to, direct and / or indirect coupling. The present disclosure contemplates that terms such as "couples," "coupling," "coupled," and the like may include operative coupling, such as electrical and / or fluid coupling.
[0013]
[0016] 1 is a schematic top view of a system 100 for processing substrates according to one embodiment. The system 100 includes a cluster tool 180. The cluster tool 180 includes a factory interface 102, one or more load lock chambers 104, 106 (two shown), and one or more transfer chambers 108, 116 (two shown) with respective transfer robots 110, 118 disposed therein. The cluster tool 180 includes one or more first chambers 120, 122 (two shown) mounted on a first main frame 151 and one or more epitaxial deposition chambers 124, 126, 128, 130 (four shown) mounted on a second main frame 159. The second main frame 159 is coupled to the first main frame 151. The system 100 includes one or more gas boxes 173, 175 (two shown) fluidly connected to one or more epitaxial deposition chambers 124, 126, 128, 130. The one or more gas boxes 173, 175 are configured to supply one or more process gases and / or one or more purge gases to the one or more epitaxial deposition chambers 124, 126, 128, 130.
[0014]
[0017] The cluster tool 180 includes one or more pressure stabilization chambers 112, 114 (two are shown) coupled between one or more first chambers 120, 122 and one or more epitaxial deposition chambers 124, 126, 128, 130. In one embodiment shown in FIG. 1 , each pressure stabilization chamber 112, 114 is coupled between the transfer chambers 108 and 116. The pressure stabilization chambers 112 and 114 can be considered load locks through which substrates are transferred between the first mainframe 151 and the second mainframe 159. The first mainframe 151 is maintained at a reduced pressure below atmospheric pressure. The second mainframe 159 is maintained at atmospheric pressure. As described in detail herein, substrates in the system 100 can be processed in and transferred between the various chambers without being exposed to the ambient environment outside the cluster tool 180. For example, a substrate may be processed in and transferred between various chambers at low pressure or reduced pressure environments without breaking the low pressure (e.g., 700 Torr or less, such as 300 Torr or less) or reduced pressure environment between various processes performed on the substrate in system 100. System 100 may provide an integrated cluster tool 180 for performing processing steps on a substrate.
[0015]
[0018] 1 , the factory interface 102 includes a docking station 140 and a factory interface robot 142 to facilitate the transfer of substrates. The docking station 140 is configured to receive one or more front-opening unified pods (FOUPs) 149. In some embodiments, which may be combined with other embodiments, each factory interface robot 142 includes a blade 148 located at one end of the respective factory interface robot 142 that is configured to transfer substrates from the factory interface 102 to the load lock chambers 104, 106.
[0016]
[0019] The load lock chambers 104, 106 include respective doors 150, 152 that connect to the factory interface 102 and respective doors 154, 156 that connect to the first transfer chamber 108. The pressure stabilization chambers 112, 114 each include a respective first door 158, 160 that connects to the first transfer chamber 108 and a respective second door 166, 168 that connects to the second transfer chamber 116.
[0017]
[0020] The first transfer chamber 108 includes respective doors 162, 164 that connect to the first chambers 120, 122. The second transfer chamber 116 includes respective doors 170, 172, 174, 176 that connect to the epitaxial deposition chambers 124, 126, 128, 130. The doors 154, 156, 158, 160, 162, 164, 166, 168, 170, 172, 174, 176 include slit openings with slit valves for passing substrates through, for example, by the transfer robots 110, 118. Each door 154, 156, 158, 160, 162, 164, 166, 168, 170, 172, 174, 176 can be configured to provide a seal between the respective chambers to prevent gases from passing between the respective chambers. Each door 154, 156, 158, 160, 162, 164, 166, 168, 170, 172, 174, 176 can be opened to transfer substrates between chambers, or can be closed otherwise, such as during a processing step.
[0018]
[0021] The load lock chambers 104, 106, the transfer chambers 108, 116, the pressure stabilization chambers 112, 114, the first chambers 120, 122, and the epitaxial deposition chambers 124, 126, 128, 130 may be fluidly coupled to a gas and pressure control system 181. The gas and pressure control system 181 may include one or more gas pumps (e.g., turbo pumps, cryopumps, roughing pumps, vacuum pumps, etc.), gas sources, various valves, and conduits fluidly coupled to the various chambers. For example, each load lock chamber 104, 106 may be coupled to a gas source and / or an exhaust pump of the gas and pressure control system 181.
[0019]
[0022] 1 , in some embodiments, a gas and pressure control system 181 includes a first gas source 182 fluidly connected to the interior space of the first pressure stabilization chamber 112 and a second gas source 183 fluidly connected to the interior space of the second pressure stabilization chamber 114. The gas and pressure control system 181 includes a first exhaust pump 184 fluidly connected to the interior space of the first pressure stabilization chamber 112 and a second exhaust pump 185 fluidly connected to the interior space of the second pressure stabilization chamber 114. The gas sources 182 and 183 supply a pressure stabilizing gas to the pressure stabilization chambers 112 and 114, and the exhaust pumps 184 and 185 exhaust the pressure stabilizing gas from the pressure stabilization chambers 112 and 114. The pressure stabilizing gas is an inert gas. In some embodiments, which may be combined with other embodiments, the pressure stabilizing gas is nitrogen (N). The internal pressure of the pressure stabilization chambers 112, 114 can be increased by increasing the supply of pressure stabilization gas from the gas sources 182, 183 and / or by decreasing the pumping speed using the exhaust pumps 184, 185. The internal pressure of the pressure stabilization chambers 112, 114 can be decreased by decreasing the supply of pressure stabilization gas from the gas sources 182, 183 and / or by increasing the pumping speed using the exhaust pumps 184, 185.
[0020]
[0023] The present disclosure contemplates that a pressure stabilizing gas may be supplied to and exhausted from the first transfer chamber 108 and the second transfer chamber 116 to transfer a substrate between the chambers. The present disclosure contemplates that a pressure stabilizing gas may be supplied to and exhausted from the first chambers 120, 122 and / or the epitaxial deposition chambers 124, 126, 128, 130 to transfer a substrate between the chambers.
[0021]
[0024] During operation, the factory interface robot 142 transfers a substrate from the FOUP 149 through the door 150 or 152 to the load lock chamber 104 or 106. The gas and pressure control system 181 then pumps down the load lock chamber 104 or 106. In one example, the gas and pressure control system 181 reduces the pressure within the load lock chamber 104 or 106. The gas and pressure control system 181 maintains the transfer chamber 108 at a first pressure. In some embodiments, the first pressure is less than the pressure of the ambient environment of the factory interface 102. In some embodiments, the gas and pressure control system 181 maintains the pressure stabilization chambers 112, 114 at the first pressure. Thus, pumping down the load lock chamber 104 or 106 facilitates passing the substrate between, for example, the ambient environment of the factory interface 102 and the first pressure of the first transfer chamber 108.
[0022]
[0025] With the substrate in the pumped-down load lock chamber 104 or 106, the transfer robot 110 transfers the substrate from the load lock chamber 104 or 106 through the door 154 or 156 into the first transfer chamber 108. The transfer robot 110 then transfers the substrate to either of the first chambers 120, 122 through the respective doors 162, 164 for processing and to either of the pressure stabilization chambers 112, 114 through the respective doors 158, 160 for holding to await further transfer, and / or can transfer the substrate between either of the first chambers 120, 122 and the pressure stabilization chambers 112, 114. Using the transfer robot 110, the substrate is transferred to the respective substrate support 143 or 144 (e.g., a pedestal) located in the respective pressure stabilization chamber 112 or 114 while the respective first door 158 or 160 is open. The substrate is supported on the substrate support 143 or 144 and the transfer robot 110 is retracted into the first transfer chamber 108. The respective first door 158 or 160 is closed.
[0023]
[0026] The transfer robot 118 can access substrates from the substrate supports 143 or 144 in the pressure stabilization chambers 112 or 114 through the second doors 166 or 168, and can transfer substrates to and / or between any of the epitaxial deposition chambers 124, 126, 128, 130 for epitaxial deposition through respective doors 170, 172, 174, 176. The transfer robot 118 can also transfer substrates to and / or between the pressure stabilization chambers 112, 114 for holding awaiting further transfer through the respective doors 166, 168.
[0024]
[0027] The first chambers 120, 122 are configured to perform a processing step on a substrate disposed therein, and the epitaxial deposition chambers 124, 126, 128, 130 are configured to perform an epitaxial deposition step on a substrate disposed therein. The processing step in the first chambers 120, 122 is performed at a first pressure, and the epitaxial deposition step in the epitaxial deposition chambers 124, 126, 128, 130 is performed at atmospheric pressure. In some embodiments, which may be combined with other embodiments, the processing step is a cleaning step configured to remove native oxide from the substrate. In some embodiments, which may be combined with other embodiments, the processing step in the first chamber 120, 122 is a first epitaxial deposition step for depositing a first epitaxial layer on the substrate, and the epitaxial deposition step in the epitaxial deposition chambers 124, 126, 128, 130 is a second epitaxial deposition step for depositing a second epitaxial layer on the substrate. In some embodiments, which may be combined with other embodiments, the epitaxial deposition steps in the epitaxial deposition chambers 124, 126, 128, 130 are performed on the substrate(s) after the processing step in the first chamber 120, 122 has been performed on the substrate(s). In some embodiments, which may be combined with other embodiments, the processing steps in the first chambers 120, 122 are performed on the substrate(s) after the substrate(s) have undergone epitaxial deposition steps in the epitaxial deposition chambers 124, 126, 128, 130.
[0025]
[0028] As the substrate is transferred from the first chamber 120 or 122 through the first transfer chamber 108 to the pressure stabilization chamber 112 or 114, the internal pressure of the pressure stabilization chamber 112 or 114 and the first transfer chamber 108 is maintained at a first pressure using the gas and pressure control system 181. The first door 158 or 160 is closed, and the internal pressure of the pressure stabilization chamber 112 or 114 is increased to atmospheric pressure (using the gas and pressure control system 181). The second transfer chamber 116 is also maintained at atmospheric pressure using the gas and pressure control system 181. The second doors 166, 168 are opened, and the substrate is transferred from the pressure stabilization chamber 112 or 114 through the second transfer chamber 116 to one of the epitaxial deposition chambers 124, 126, 128, 130 while maintaining the pressure stabilization chamber 112 or 114 at atmospheric pressure. When a substrate is transferred from the epitaxial deposition chamber 124, 126, 128, or 130 to the first chamber 120 or 122, the operational change in the internal pressure of the pressure stabilization chamber 112 or 114 may be reversed.
[0026]
[0029] The present disclosure contemplates that chambers 120, 122, 124, 126, 128, and 130 may be other chambers for processing substrates, such as etch chambers. The present disclosure contemplates that steps in any of chambers 120, 122, 124, 126, 128, and 130 may be performed at a pressure equal to or less than the first pressure. The present disclosure contemplates that steps in any of chambers 120, 122, 124, 126, 128, and 130 may be performed at a pressure between the first pressure and atmospheric pressure. The present disclosure contemplates that steps in any of chambers 120, 122, 124, 126, 128, and 130 may be performed at a pressure equal to or greater than atmospheric pressure.
[0027]
[0030] The system 100 includes a controller 190 configured to control the system 100 or components thereof. For example, the controller 190 may control the operation of the system 100 using direct control of the chambers 104, 106, 108, 112, 114, 116, 120, 122, 124, 126, 128, 130 of the system 100 or by controlling controllers associated with the chambers 104, 106, 108, 112, 114, 116, 120, 122, 124, 126, 128, 130. The controller 190 is configured to control the gas and pressure control system 181. During operation, the controller 190 enables data collection and feedback from each chamber and the gas and pressure control system 181 to regulate and control the performance of the system 100.
[0028]
[0031] Controller 190 generally includes a central processing unit (CPU) 192, memory 194, and support circuits 196. CPU 192 may be one of any form of general-purpose processor available in an industrial setting. Memory 194, or non-transitory computer-readable medium, is accessible by CPU 192 and may be one or more memories, such as local or remote random access memory (RAM), read-only memory (ROM), floppy disk, hard disk, or any other form of digital storage. Support circuits 196 are coupled to CPU 192 and may include cache, clock circuits, input / output subsystems, power supplies, etc.
[0029]
[0032] The various methods (e.g., method 400) and processes disclosed herein may generally be performed under the control of CPU 192 by CPU 192 executing computer instruction code stored in memory 194 (or in the memory of a particular processing chamber), for example, as a software routine. When the computer instruction code is executed by CPU 192, CPU 192 controls the chamber to process according to the various methods and processes described herein. In some embodiments, which may be combined with other embodiments, memory 194 includes instructions stored therein that, when executed, cause the methods (e.g., method 400) and processes described herein to be performed.
[0030]
[0033] Other processing systems in other configurations are also contemplated. For example, more or fewer processing chambers may be coupled to the transfer apparatus. In one embodiment shown in FIG. 1 , the transfer apparatus includes transfer chambers 108, 116 and pressure stabilization chambers 112, 114. In other embodiments, more or fewer transfer chambers (e.g., one transfer chamber) and / or more or fewer pressure stabilization chambers (e.g., no pressure stabilization chambers) may be implemented as the transfer apparatus in a system for processing substrates.
[0031]
[0034] FIG. 2 is a schematic cross-sectional view of a processing chamber 200 according to one embodiment. The processing chamber 200 is a cleaning chamber, such as a pre-cleaning chamber. The processing chamber 200 may be used as either of the first chambers 120, 122 shown in FIG. 1. The processing chamber 200 may be configured to perform a thermal or plasma-based oxidation process and / or a plasma-assisted dry etching process. The processing chamber 200 includes a chamber body 212, a lid assembly 214, and a support assembly 216. The lid assembly 214 is disposed at an upper end of the chamber body 212, and the support assembly 216 is disposed at least partially within the chamber body 212. A vacuum system may be used to remove gases from the processing chamber 200. The vacuum system includes a vacuum pump 218 coupled to a vacuum port 221 disposed in the chamber body 212. The vacuum system may be part of the gas and pressure control system 181 shown in FIG. 1.
[0032]
[0035] The lid assembly 214 includes at least two stacked components 222, 241, and 242 (three are shown) configured to generate a plasma volume or plasma cavity therebetween. A first electrode 220 is disposed vertically above a second electrode 222, defining the plasma volume. The first electrode 220 is connected to a power source 224, such as a radio frequency (RF) power source, and the second electrode 222 is connected to ground or a source return, creating a capacitance between the first electrode 220 and the second electrode 222. The lid assembly 214 includes one or more gas inlets 226 for supplying a cleaning gas to the substrate surface through a blocker plate 228 and a gas distribution plate 230. The cleaning gas may be an etchant, or an ionized active radical such as ionized fluorine, chlorine, or ammonia, or an oxidizer such as ozone. Furthermore, the processing chamber 200 includes a controller 202 for controlling processes within the processing chamber 200. The controller 202 may be part of (eg, integrated with) the controller 190 shown in FIG. 1 or may be in communication with the controller 190 shown in FIG.
[0033]
[0036] The support assembly 216 may include a substrate support 232 for supporting the substrate 210 thereon during processing. The substrate support 232 may be coupled to an actuator 234 by a shaft 236. The shaft 236 extends through a centrally located opening formed in the lower surface of the chamber body 212. The actuator 234 may be flexibly sealed to the chamber body 212 by a bellows (not shown) that prevents vacuum leakage around the shaft 236. The actuator 234 enables the substrate support 232 to be moved vertically within the chamber body 212 between a process position and a lower transfer position. The transfer position is slightly below a slit valve opening 243 formed in a sidewall of the chamber body 212. A pumping ring 244 (which may include one or more pumping liners) is disposed within the first processing volume 211 of the processing chamber 200 to facilitate exhausting gases from the first processing volume 211.
[0034]
[0037] The substrate support 232 has a flat or substantially flat surface for supporting the substrate 210 being processed thereon. The substrate support 232 can be moved vertically within the chamber body 212 by an actuator 234 coupled to the substrate support 232 by a shaft 236. During operation, the substrate support 232 can be raised to a position adjacent to the lid assembly 214 to control the temperature of the substrate 210 being processed. Thus, the substrate 210 can be heated via radiation or convection emanating from the gas distribution plate 230.
[0035]
[0038] The processing chamber 200 is configured to perform a cleaning process on the substrate 210 to remove native oxide from the substrate 210. The native oxide may include SiO2. The cleaning process is performed while maintaining the first processing space 211 of the processing chamber 200 at a first pressure and a first temperature. The first temperature is equal to or less than 1000 degrees Celsius, such as equal to or less than 800 degrees Celsius. In some embodiments, which may be combined with other embodiments, the first temperature is within a range of 15 degrees Celsius to 130 degrees Celsius, such as equal to or less than 20 degrees Celsius to 100 degrees Celsius. In some embodiments, which may be combined with other embodiments, the first temperature is within a range of 0 degrees Celsius to 50 degrees Celsius, such as equal to or less than 20 degrees Celsius to 40 degrees Celsius. The first pressure is equal to or less than 700 Torr, such as equal to or less than 600 Torr. In some embodiments that may be combined with other embodiments, the first pressure is in a range of 5 Torr to 600 Torr, for example, in a range of 100 Torr to 500 Torr, for example, in a range of 200 Torr to 400 Torr. In some embodiments that may be combined with other embodiments, the first pressure is in a range of 30 Torr to 80 Torr. In some embodiments that may be combined with other embodiments, the first pressure is 5 Torr. In some embodiments that may be combined with other embodiments, the first pressure is 300 Torr. In some embodiments that may be combined with other embodiments, the first pressure is 600 Torr.
[0036]
[0039] The present disclosure contemplates that when the first chamber 120, 122 is an epitaxial deposition chamber, the first pressure described is used for the first epitaxial deposition step.
[0037]
[0040] During the cleaning process, the substrate 210 may be exposed to a generated plasma. The plasma may include one or more of NH3 and / or NF3. The plasma may also include one or more inert gases, such as one or more of helium (He), nitrogen (N2), and / or argon (Ar). The plasma may be capacitively coupled or inductively coupled. The plasma may be supplied from a remote plasma source. The plasma may be introduced into the processing chamber through a gas distribution plate, such as a showerhead. NH3 is injected directly into the chamber through a separate gas inlet. The cleaning process may include exposing the substrate 210 to a thermal combination of anhydrous HF and NH3, exposing the substrate 210 to anhydrous HF, a dry etching process (such as a remote plasma-assisted dry etching process), and / or a silicon etching process (e.g., an inductively coupled plasma H2 / Cl2 silicon etching). The dry etching process may include exposing the substrate 210 to NF3 and NH3 plasma byproducts.
[0038]
[0041] The cleaning process may include a wet cleaning process. The substrate 210 may be cleaned using a wet cleaning process, in which the substrate 210 is exposed to a cleaning solution, such as an HF-rust type cleaning solution, an ozone water rinse, a hydrofluoric acid (HF) and hydrogen peroxide (H2O2) solution, and / or other suitable cleaning solutions. The cleaning solution may be heated.
[0039]
[0042] FIG. 3 is a schematic cross-sectional view of a deposition chamber 300 according to one embodiment. The deposition chamber 300 is an epitaxial deposition chamber. The deposition chamber 300 may be used as the epitaxial deposition chambers 124, 126, 128, and / or 130 shown in FIG. 1 using atmospheric pressure. The deposition chamber 300 may be used as the first chambers 120 and / or 122 shown in FIG. 1 using a first pressure. The deposition chamber 300 is utilized to grow an epitaxial film on a substrate, such as substrate 302. The deposition chamber 300 generates a crossflow of precursors across the top surface 350 of the substrate 302.
[0040]
[0043] The deposition chamber 300 includes an upper body 356, a lower body 348 disposed below the upper body 356, and a flow module 312 disposed between the upper body 356 and the lower body 348. The upper body 356, the flow module 312, and the lower body 348 form a chamber body. Disposed within the chamber body are a substrate support 306, an upper window 308, a lower window 310, a plurality of upper lamps 341, and a plurality of lower lamps 343. As shown, a controller 320 is used to communicate with the deposition chamber 300 and to control the processes and methods described herein. The controller 320 may be part of (e.g., integrated with) or in communication with the controller 190 shown in FIG. 1. The upper window 308 may be convex as shown in FIG. 3 (such as when the deposition chamber 300 is used with a first pressure), or the upper window 308 may be flat or concave (such as when the deposition chamber 300 is used with atmospheric pressure).
[0041]
[0044] The substrate support 306 is disposed between an upper window 308 and a lower window 310. A plurality of upper lamps 341 are disposed between the upper window 308 and a lid 354. The plurality of upper lamps 341 form part of an upper lamp module 355. The lid 354 may include a plurality of sensors (not shown) disposed therein for measuring the temperature within the deposition chamber 300. A plurality of lower lamps 343 are disposed between the lower window 310 and a floor 352. The plurality of lower lamps 343 form part of a lower lamp module 345. In the illustrated embodiment, the upper window 308 is an upper dome. In some embodiments, the upper window 308 is formed of an energy-transmitting material, such as quartz. In the illustrated embodiment, the lower window 310 is a lower dome. In some embodiments, the lower window 310 is formed of an energy-transmitting material, such as quartz.
[0042]
[0045] A second processing space 336 is created between the upper window 308 and the lower window 310. A substrate support 306 is disposed within the second processing space 336. The substrate support 306 includes an upper surface on which the substrate 302 is disposed and supported. The substrate support 306 is attached to a shaft 318. The shaft is connected to a motion assembly 321. The motion assembly 321 includes one or more actuators and / or adjustment devices that provide movement and / or adjustment of the shaft 318 and / or the substrate support 306 within the second processing space 336.
[0043]
[0046] The substrate support 306 may include lift pin holes 307 disposed therein that are sized to accommodate lift pins 332 for lifting the substrate 302 from the substrate support 306 either before or after an epitaxial deposition process is performed using the deposition chamber 300. The lift pins 332 may rest on lift pin stops 334 when the substrate support 306 is lowered from the process position to the transfer position.
[0044]
[0047] The flow module 312 includes multiple process gas inlets 314, multiple purge gas inlets 364, and one or more exhaust gas outlets 316. The multiple process gas inlets 314 and the multiple purge gas inlets 364 are positioned on the opposite side of the flow module 312 from the one or more exhaust gas outlets 316. One or more flow guides may be positioned below the multiple process gas inlets 314 and the one or more exhaust gas outlets 316. The flow guide may be positioned above the purge gas inlet 364. A liner 363 is positioned on the inner surface of the flow module 312 to protect the flow module 312 from reactive gases used during the epitaxial deposition process. The process gas inlets 314 and the purge gas inlets 364 are positioned to flow gases parallel to the top surface 350 of the substrate 302 disposed in the second processing space 336. The process gas inlets 314 are fluidly connected to a process gas source 351. The purge gas inlet 364 is fluidly connected to the purge gas source 362 .
[0045]
[0048] The one or more exhaust gas outlets 316 are fluidly connected to an exhaust pump 357. The one or more exhaust gas outlets 316 are further connected to or include an exhaust system 378. The exhaust system 378 fluidly connects the one or more exhaust gas outlets 316 and the exhaust pump 357. The exhaust system 378 described herein can include one or more growth monitors and be configured to assist in controlled epitaxial deposition of layers on the substrate 302. In some embodiments, the process gas source 351, the purge gas source 362, the exhaust pump 357, and the exhaust system 378 are part of the gas and pressure control system 181 shown in FIG. 1 .
[0046]
[0049] The deposition chamber 300 includes a preheat ring 374 disposed within the second processing space 336. During an epitaxial deposition process, one or more process gases are supplied using a process gas source 351. The one or more process gases flow over the preheat ring 374 and over the top surface 350 of the substrate 302 while the second processing space 336 and the substrate 302 are heated using lamps 341, 343 to epitaxially deposit (e.g., grow) one or more film layers on the substrate 302. The epitaxially deposited film layers may include one or more of silicon (Si), silicon-germanium (SiGe), silicon phosphide (SiP), silicon arsenide (SiAs), and / or boron-doped silicon germanium (SiGeB).
[0047]
[0050] The one or more process gases may include one or more of dichlorosilane, silane, disilane, germane, and / or hydrogen chloride. In some embodiments, which may be combined with other embodiments, an epitaxial deposition process performed using deposition chamber 300 includes exposing substrate 302 to a hydrogen-containing gas at a second temperature and atmospheric pressure.
[0048]
[0051] The epitaxial deposition process is performed while maintaining the second processing space 336 at a second temperature. The second temperature is in the range of 400°C to 1200°C. In some embodiments, which may be combined with other embodiments, the second temperature is in the range of 400°C to 800°C. In some embodiments, which may be combined with other embodiments, the second temperature is less than 400°C. In one implementation in which atmospheric pressure is used, the epitaxial deposition process is performed while maintaining the second processing space 336 at atmospheric pressure. In some embodiments, which may be combined with other embodiments, the atmospheric pressure is in the range of 700 Torr to 800 Torr, such as in the range of 720 Torr to 790 Torr, such as in the range of 740 Torr to 780 Torr, such as in the range of 750 Torr to 770 Torr. In some embodiments, which may be combined with other embodiments, the atmospheric pressure is 760 Torr.
[0049]
[0052] 4 is a schematic flow diagram of a method 400 for processing a substrate according to one embodiment. Step 403 includes placing the substrate in a factory interface, such as factory interface 102.
[0050]
[0053] Step 405 includes transferring the substrate from the factory interface to a first processing space of a first chamber, such as first chamber 120 or 122. In some embodiments, which may be combined with other embodiments, the first chamber is a cleaning chamber, such as processing chamber 200. In some embodiments, which may be combined with other embodiments, the first chamber is a first epitaxial deposition chamber, such as deposition chamber 300.
[0051]
[0054] Step 407 includes performing a processing step on the substrate in the first chamber while maintaining the first processing space at a first pressure. In some embodiments, the first pressure is less than atmospheric pressure, such as less than 760 Torr, less than 750 Torr, less than 730 Torr, or less than 700 Torr. In some embodiments that may be combined with other embodiments, the processing step is a cleaning step to remove native oxide from the substrate. In some embodiments that may be combined with other embodiments, the processing step is a first epitaxial deposition step.
[0052]
[0055] Step 409 includes maintaining the pressure stabilization chamber at a first pressure.
[0053]
[0056] Step 411 includes transferring the substrate from the first chamber to the pressure stabilization chamber through a first door of the pressure stabilization chamber. In some embodiments that may be combined with other embodiments, a second door of the pressure stabilization chamber is maintained in a closed position while the substrate is transferred into the pressure stabilization chamber through the first door. In some embodiments that may be combined with other embodiments, step 411 includes transferring the substrate through the first transfer chamber while maintaining the pressure of the first transfer chamber at a first pressure. In some embodiments that may be combined with other embodiments, a closed second door of the pressure stabilization chamber separates the pressure stabilization chamber from the second transfer chamber. In some embodiments that may be combined with other embodiments, step 411 includes maintaining the pressure of the second transfer chamber at atmospheric pressure.
[0054]
[0057] Step 413 includes closing a first door of the pressure stabilization chamber.
[0055]
[0058] Step 415 includes increasing the pressure of the pressure stabilization chamber from the first pressure to atmospheric pressure. The atmospheric pressure may be, for example, within a range of 700 Torr to 800 Torr, such as 700 Torr to 800 Torr, such as 720 Torr to 790 Torr, such as 740 Torr to 780 Torr, or such as 750 Torr to 770 Torr. In some embodiments, which may be combined with other embodiments, the atmospheric pressure is 760 Torr. In some embodiments, which may be combined with other embodiments, the pressure of the pressure stabilization chamber is increased to a pressure substantially equal to the pressure of the second transfer chamber. For example, the pressure of the pressure stabilization chamber is increased to a pressure within 20 Torr, 15 Torr, 10 Torr, or 5 Torr of the pressure of the second transfer chamber.
[0056]
[0059] Step 417 includes opening a second door of the pressure stabilization chamber. In some embodiments, which may be combined with other embodiments, the first door remains closed while the second door is opened.
[0057]
[0060] Step 419 includes transferring the substrate from the pressure stabilization chamber through a second door to a second processing space of the epitaxial deposition chamber. In some embodiments, which may be combined with other embodiments, the first door of the pressure stabilization chamber is maintained in a closed position while the substrate is transferred from the pressure stabilization chamber through the second door. In some embodiments in which a second door of the pressure stabilization chamber connects the pressure stabilization chamber to a second transfer chamber, step 419 includes transferring the substrate through the second transfer chamber. In one embodiment in which the first chamber is an epitaxial deposition chamber, the epitaxial deposition chamber of step 419 is a second epitaxial deposition chamber.
[0058]
[0061] Step 421 includes performing an epitaxial deposition step on the substrate while maintaining the second process space at atmospheric pressure and a temperature, the temperature being in the range of 400 degrees Celsius to 1200 degrees Celsius, such as in the range of 400 degrees Celsius to 800 degrees Celsius. In one embodiment where the first process step is an epitaxial deposition step, the epitaxial deposition step of Step 421 is a second epitaxial deposition step.
[0059]
[0062] Advantages of the present disclosure include performing an epitaxial deposition process at atmospheric pressure and a temperature in the range of 400° C. to 1200° C. along with a cleaning process at a first pressure (a pressure below atmospheric pressure) in the same cluster tool, a single cluster tool having two mainframes operating at different pressures, transferring substrates between processing chambers operating at different pressures, higher epitaxial growth rates compared to conventional processes, fewer substrate contaminants and defects compared to conventional processes, and reduced processing delays, costs, and process drift compared to conventional processes. For example, performing the epitaxial deposition process at atmospheric pressure and a second temperature facilitates efficiently increasing epitaxial growth rates while efficiently reducing substrate defects compared to conventional processes.
[0060]
[0063] Furthermore, efficiently increasing epitaxial growth rates while reducing defects in the substrate compared to conventional processes is facilitated by performing a sequence within a cluster tool, while isolating the substrate from the ambient environment outside the cluster tool, that includes the following steps: cleaning the substrate at a first temperature below atmospheric pressure, a transfer step to move the substrate to an epitaxial deposition chamber, and epitaxial deposition on the substrate at atmospheric pressure.
[0061]
[0064] Efficiently increasing epitaxial growth rates while reducing defects in the substrate compared to conventional processes is facilitated by performing a sequence within a cluster tool, while isolating the substrate from the ambient environment outside the cluster tool, that includes the following steps: a first epitaxial deposition step on the substrate at a first pressure below atmospheric pressure, a transfer step to move the substrate to an epitaxial deposition chamber, and a second epitaxial deposition step on the substrate at atmospheric pressure.
[0062]
[0065] It is contemplated that one or more aspects disclosed herein may be combined. As an example, one or more aspects, features, components, and / or characteristics of system 100, processing chamber 200, deposition chamber 300, and / or method 400 may be combined. For example, process parameters (including, but not limited to, temperature and pressure) described in connection with processing chamber 200 and / or deposition chamber 300 may be combined with the processes described for method 400. Furthermore, it is contemplated that one or more aspects disclosed herein may include some or all of the advantages described above.
[0063]
[0066] The present disclosure achieves unexpected results over other processes. For example, it was previously believed that transferring substrates between chambers at different pressures could involve processing delays, increased costs, process drift, and substrate defects. However, the cluster tool of the present disclosure facilitates operational flexibility and consistent process results by providing controlled, discrete environments interconnected by pressure stabilization chambers 112, 114.
[0064]
[0067] While the foregoing is directed to several embodiments of the present disclosure, other and further embodiments of the present disclosure may be devised without departing from the basic scope thereof. The present disclosure also contemplates that one or more aspects of the embodiments described herein may be substituted with one or more of the other aspects described. The scope of the present disclosure is defined by the following claims.
Claims
1. 1. A cluster tool suitable for processing semiconductor substrates, comprising: A first mainframe, one or more process chambers mounted on the first mainframe, the one or more process chambers configured to perform a process step at a first pressure less than 700 Torr; a second mainframe coupled to the first mainframe; and a cluster tool comprising: one or more epitaxial deposition chambers coupled to the second mainframe, the one or more epitaxial deposition chambers configured to perform epitaxial deposition processes at atmospheric pressure in a range of 700 Torr to 800 Torr.
2. The cluster tool of claim 1 , wherein the one or more process chambers include one or more cleaning chambers, and the process step is a cleaning step.
3. The cluster tool of claim 1 , wherein the one or more process chambers include one or more reduced pressure epitaxial deposition chambers, and the process step is a reduced pressure epitaxial deposition step.
4. a first pressure stabilization chamber coupled between the one or more process chambers and the one or more epitaxial deposition chambers; and The cluster tool of claim 1 , further comprising a second pressure stabilization chamber coupled between the one or more process chambers and the one or more epitaxial deposition chambers.
5. 10. The cluster tool of claim 1, further comprising at least one pressure stabilization chamber coupled between said first mainframe and said second mainframe, said first mainframe operating at said first pressure and said second mainframe operating at said atmospheric pressure.
6. The at least one pressure stabilization chamber comprises: Interior space, a first door connecting to the first transfer chamber; a second door connecting to the second transfer chamber; a substrate support disposed within the interior space; a first gas source fluidly connected to the interior space for supplying a pressure stabilizing gas to the interior space; and The cluster tool of claim 5 , further comprising an exhaust pump fluidly connected to the interior volume for exhausting the pressure stabilizing gas from the interior volume.
7. Factory interfaces, and The cluster tool of claim 5 , further comprising one or more load lock chambers disposed between the factory interface and the first mainframe.
8. 1. A method of processing a substrate, comprising: placing the substrate within a factory interface; transferring the substrate from the factory interface to a first processing space of a cleaning chamber; performing a cleaning process on the substrate in the cleaning chamber while maintaining the first process space at a first pressure less than 700 Torr to remove native oxide from the substrate; maintaining the pressure in the pressure stabilization chamber at the first pressure; transferring the substrate from the cleaning chamber to the pressure stabilization chamber through a first door of the pressure stabilization chamber; closing the first door; increasing the pressure in the pressure stabilization chamber to atmospheric pressure in the range of 700 Torr to 800 Torr; opening a second door of the pressure stabilization chamber; transferring the substrate from the pressure stabilization chamber to a second processing space of an epitaxial deposition chamber; and performing an epitaxial deposition process on the substrate while maintaining the second processing space at the atmospheric pressure.
9. 9. The method of claim 8, wherein the first pressure is in the range of 30 Torr to 80 Torr.
10. 10. The method of claim 9, wherein the epitaxial deposition step is performed on the substrate while maintaining the second processing space at a temperature in the range of 400 degrees Celsius to 1200 degrees Celsius.
11. Transferring the substrate from the cleaning chamber to the pressure stabilization chamber comprises: transferring the substrate through the first transfer chamber while maintaining a pressure in the first transfer chamber at the first pressure; and The method of claim 8 , further comprising maintaining the second door of the pressure stabilization chamber closed while moving the substrate into the pressure stabilization chamber.
12. the closed second door of the pressure stabilization chamber separates the pressure stabilization chamber from a second transfer chamber; 12. The method of claim 11, wherein transferring the substrate from the cleaning chamber to the pressure stabilization chamber further comprises maintaining a pressure in the second transfer chamber at atmospheric pressure.
13. 13. The method of claim 12, wherein the first door is maintained closed while the second door is opened.
14. 14. The method of claim 13, wherein transferring the substrate from the pressure stabilization chamber to the second processing space of the epitaxial deposition chamber further comprises transferring the substrate through the second transfer chamber.
15. 1. A method of processing a substrate, comprising: placing the substrate within a factory interface; transferring the substrate from the factory interface to a first processing space of a first epitaxial deposition chamber; performing a first epitaxial deposition process on the substrate in the first epitaxial deposition chamber while maintaining the first process space at a first pressure less than 700 Torr; maintaining the pressure in the pressure stabilization chamber at the first pressure; transferring the substrate from the first epitaxial deposition chamber to the pressure stabilization chamber through a first door of the pressure stabilization chamber; closing the first door; increasing the pressure in the pressure stabilization chamber to atmospheric pressure in the range of 700 Torr to 800 Torr; opening a second door of the pressure stabilization chamber; transferring the substrate from the pressure stabilization chamber to a second processing space of a second epitaxial deposition chamber; and performing a second epitaxial deposition step on the substrate while maintaining the second processing space at the atmospheric pressure.
16. 16. The method of claim 15, wherein the second epitaxial deposition step is performed on the substrate while maintaining the second processing space at a temperature in the range of 400 degrees Celsius to 1200 degrees Celsius.
17. Transferring the substrate from the first epitaxial deposition chamber to the pressure stabilization chamber includes: transferring the substrate through the first transfer chamber while maintaining a pressure in the first transfer chamber at the first pressure; and 16. The method of claim 15, further comprising maintaining the second door of the pressure stabilization chamber closed while moving the substrate into the pressure stabilization chamber.
18. the closed second door of the pressure stabilization chamber separates the pressure stabilization chamber from a second transfer chamber; 20. The method of claim 17, wherein transferring the substrate from the first epitaxial deposition chamber to the pressure stabilization chamber further comprises maintaining the pressure of the second transfer chamber at atmospheric pressure.
19. 20. The method of claim 18, wherein the first door is maintained closed while the second door is opened.
20. 20. The method of claim 19, wherein transferring the substrate from the pressure stabilization chamber to the second processing space of the second epitaxial deposition chamber further comprises transferring the substrate through the second transfer chamber.