Exposure apparatus, exposure method, and method of manufacturing article

Abstract

To provide an exposure apparatus which maintains productivity and exposure performance at the time of a plurality of wavelengths equal to those at the time of a single wavelength.SOLUTION: An exposure apparatus includes a light source capable of emitting pulsed light of a plurality of wavelengths, a characteristic data division unit configured to acquire time-division information from the light source and divide characteristic data for each wavelength based on the time-division information, and a calculation unit configured to calculate an exposure condition based on the characteristic data divided by the characteristic data division unit.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to an exposure apparatus, an exposure method, and a method for manufacturing an article. [Background technology]

[0002] Currently, the mainstream exposure tool used in semiconductor device manufacturing is a scanning exposure tool that exposes a mask and wafer by scanning them through an optical system. These scanning exposure tools are required to improve not only exposure accuracy and overlay accuracy, but also productivity.

[0003] Furthermore, in the lithography process for thick-film resist-coated wafers using scanning exposure equipment, multiple (usually two-step) exposure is performed to increase the DOF. In this multiple exposure, the DOF is increased by performing a second exposure on a wafer that has undergone the first exposure under the same process conditions, with only the focus changed. However, this method inevitably reduces productivity because it requires multiple exposures using the same process.

[0004] Patent Document 1 proposes an exposure method using a multi-wavelength laser to solve the above problem. According to Patent Document 1, since the same area is exposed to multiple wavelengths simultaneously, the effect equivalent to a focus change during multiple exposures is achieved due to the influence of chromatic aberration, thereby expanding the DOF. There are roughly two methods for realizing a laser that outputs multiple wavelengths. One is the space-division method described in Patent Document 2, which extracts multiple specific wavelengths within the same space. The other is the time-division method described in Patent Document 3, which sequentially switches the wavelength of emitted light pulses. Currently, the time-division method described in Patent Document 3 is mainstream because it is relatively easy to control the optical quality of each pulse.

[0005] As an exposure method using the above-mentioned multiple wavelength laser, Patent Document 4 proposes a method in which calibration for determining the pattern imaging position on the original is performed using a single wavelength, and exposure is performed by switching to multiple wavelengths during wafer exposure. [Prior art documents] [Patent documents]

[0006] [Patent Document 1] International Publication No. 2007 / 119501 [Patent Document 2] Japanese Patent Application Laid-Open No. 2010-251546 [Patent Document 3] Japanese Patent Application Laid-Open No. 2012-174883 [Patent Document 4] Japanese Patent Application Laid-Open No. 2008-103432 Summary of the Invention [Problem to be solved by the invention]

[0007] The exposure method described in Patent Document 4 involves switching between single and multiple wavelengths, improving productivity compared to multiple exposures, which perform the same process multiple times while changing the focus position. However, there is a delay at least equivalent to the time required for the switching process, which means that productivity is lower than that of a single process using a conventional single-wavelength laser. Furthermore, particularly in exposure tools using a time-division multiple-wavelength laser as a light source, the characteristics of the light source's charging voltage value and output pulse energy differ for each wavelength. Therefore, if the conventional method of feedback-controlling the laser charging voltage command value based on measurements from a light intensity sensor installed in the exposure tool is applied as is, the accuracy of integrated exposure dose control will be lower than that of a single-wavelength laser.

[0008] SUMMARY OF THE INVENTION It is therefore an object of the present invention to provide an exposure apparatus that maintains productivity and exposure performance at the same level when using multiple wavelengths as when using a single wavelength. [Means for solving the problem]

[0009] In order to achieve the above object, an exposure apparatus according to one aspect of the present invention is characterized in that it comprises a light source capable of irradiating pulsed light of multiple wavelengths, a characteristic data division unit that acquires time division information from the light source and divides characteristic data for each wavelength based on the time division information, and a calculation unit that calculates exposure conditions based on the characteristic data divided by the characteristic data division unit. [Effects of the Invention]

[0010] According to the present invention, productivity and exposure performance can be maintained at the same level when using multiple wavelengths as when using a single wavelength. [Brief explanation of the drawings]

[0011] [Figure 1] FIG. 1 is a diagram showing the configuration of an exposure apparatus according to a first embodiment. [Figure 2] FIG. 2 is a diagram showing an example of the configuration of a reticle reference mark; [Figure 3] FIG. 10 is a diagram showing an example of the configuration of a wafer reference mark. [Figure 4] FIG. 10 is a diagram showing an example of a calibration waveform in an exposure apparatus that uses a single-wavelength laser as a light source. [Figure 5] FIG. 10 is a diagram showing an example of a calibration waveform in an exposure apparatus that uses a dual-wavelength laser as a light source. [Figure 6] FIG. 5 is a diagram showing an example in which the calibration waveform in FIG. 4 is divided for each wavelength. [Figure 7] 10A and 10B are diagrams illustrating comparative data examples of integrated exposure amount control results at the time of single wavelength and dual wavelength. [Figure 8] FIG. 10 is a diagram showing an example of actual data of a voltage command value and output pulse energy during dual-wavelength oscillation. [Figure 9] FIG. 8 is a diagram showing an example in which the data string of FIG. 7 is divided for each wavelength. DETAILED DESCRIPTION OF THE INVENTION

[0012] Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings. In each drawing, the same members or elements are designated by the same reference numerals, and duplicated descriptions will be omitted or simplified.

[0013] <Embodiment 1> Exposure apparatus 100 of the present embodiment will be described below with reference to the various figures. Exposure apparatus 100 of the present embodiment will be described as a scanning exposure apparatus that transfers a pattern on a reticle onto a wafer by pulsed illumination (irradiating with pulsed light) while scanning the reticle and wafer.

[0014] 1 is a schematic diagram of an exposure apparatus 100 according to this embodiment. Exposure apparatus 100 according to this embodiment has a light source 1, a beam shaping unit 2, an optical integrator 3, an aperture turret 4, a half mirror 5, an energy measurement unit 6, condenser lenses 7 and 11, a blind 8, a slit 9, a mirror 10, and a reticle 12. It also has a reticle stage 13, a projection optical system 14, a focus detection system 15, a wafer stage 17, an energy measurement unit 18, a stage control unit 31, a characteristic data division unit 32, an exposure condition calculation unit 33, and a control unit (general control unit) not shown.

[0015] First, a method for transferring (forming) a pattern onto a photoresist layer on a wafer 16 using an exposure apparatus 100 of this embodiment will be described with reference to Figure 1. A luminous flux of pulsed light emitted from a light source 1 passes through a beam shaping unit 2, is shaped into a predetermined shape, and is incident on a light incident surface of an optical integrator 3. The optical integrator 3 is composed of a plurality of microlenses, and a large number of secondary light sources are formed near its light exit surface.

[0016] The light source 1 in this embodiment is configured as a light source capable of emitting pulsed light (pulse laser) of multiple wavelengths. Furthermore, the light source 1 is also configured to be capable of emitting pulsed light of a single wavelength; that is, the light source 1 in this embodiment is configured as a light source capable of switching between a mode for emitting pulsed light of a single wavelength and a mode for emitting pulsed light of multiple wavelengths. The modes include a multiple wavelength mode for emitting pulsed light of multiple wavelengths (for example, a two-wavelength mode for emitting pulsed light of two wavelengths), and a single wavelength mode for emitting pulsed light of a short wavelength. The mode switching can be performed, for example, by a control unit (not shown) described later.

[0017] The aperture turret 4 limits the size of the surface of the secondary light source using a predetermined aperture. The aperture turret 4 is embedded with a numbered aperture (illumination mode number), such as aperture apertures with different circular aperture areas for setting multiple coherence factor σ values, a ring-shaped aperture for annular illumination, and a quadrupole aperture. The aperture required to change the shape of the incident light source of the illumination light is selected and inserted into the optical path. The energy measurement unit 6 detects the light intensity of the pulsed light reflected by the half mirror 5. It also measures the light intensity using a built-in light intensity sensor.

[0018] The condenser lens 7 provides Kohler illumination to the blind 8 with a light beam from a secondary light source near the exit surface of the optical integrator 3. A slit 9 is disposed near the blind 8, which shapes the profile of the light illuminating the blind 8 into a rectangular or arc-like shape. The light passing through the blind 8 and the slit 9 passes through a mirror 10 and a condenser lens 11 and is imaged with uniform illuminance and angle of incidence onto a reticle 12 on which an element pattern is formed. The reticle 12 is a conjugate plane of the blind 8. The opening area of ​​the blind 8 is similar in shape to the desired pattern exposure area of ​​the reticle 12 in terms of the optical magnification ratio. During wafer exposure, the blind 8 is synchronously scanned with the reticle stage 13 at the optical magnification ratio while blocking light outside the exposure area of ​​the reticle 12.

[0019] The reticle 12 is held by a reticle stage 13. Light passing through the reticle 12 passes through a projection optical system 14 and is re-imaged in an exposure field area on a plane optically conjugate with the pattern surface of the reticle 12. A focus detection system 15 detects the height and tilt of the exposure surface on a wafer 16 held on a wafer stage 17. During scanning exposure, the wafer stage 17 moves synchronously with the reticle stage 13, controlled based on information from the focus detection system 15 so that the exposure surface of the wafer 16 coincides with the exposure field surface. At the same time, the wafer 16 is exposed, and the pattern is transferred to the photoresist layer on the wafer 16.

[0020] Next, a method for aligning the reticle stage 13 and the wafer stage 17 using the exposure apparatus 100 of this embodiment will be described with reference to Figure 2. Figure 2 is a detailed view of the reticle 12 and the reticle stage 13.

[0021] Reticle reference plates 21 are configured on both ends of the reticle stage, and multiple optical marks necessary for calibrating the exposure apparatus are arranged on them. These optical marks also include a reticle reference mark 22 necessary for aligning the reticle stage 13 and the wafer stage 17. The reticle reference mark 22 does not necessarily have to be arranged on the reticle reference plate 21, but may also be arranged on the reticle 12 as shown in FIG. 2.

[0022] Figure 3 shows an example of the configuration of a wafer fiducial mark. The alignment of the reticle stage and wafer stage is adjusted for multiple components (X, Y, Z, Tilt, projection magnification, etc.). The mark shapes used to measure each component are not necessarily the same. For example, the mark shown in Figure 3(A), which has high sensitivity to the X direction, is used to measure the stage position in the X direction, and the mark shown in Figure 3(B), which has high sensitivity to the Y direction, is used to measure the stage position in the Y direction. In addition, each component may be calculated by combining multiple results of position measurements using the marks shown in Figure 3.

[0023] Figure 4 shows an example of a calibration waveform acquired for aligning the reticle stage 13 and wafer stage 17 when a single-wavelength laser is used as the light source 1. While the reticle stage 13 and wafer stage 17 are simultaneously operated in opposite directions, light source 1 emits continuous light pulses at a specific oscillation frequency, and the light intensity is measured by a light intensity sensor in energy measurement unit 18 located below the wafer fiducial mark. At this time, the measurement value of the light intensity sensor reaches a maximum at the position where the conditions of each component of the reticle fiducial mark and the wafer fiducial mark overlap, so the optimal imaging position on the wafer surface can be determined by detecting the peak position of the calibration waveform in Figure 4.

[0024] 5 is a diagram showing an example of a calibration waveform acquired using a time-division dual-wavelength laser as the light source 1. The dual-wavelength laser emitted from the light source 1 emits pulses at a repetition frequency of 4 kHz, with the wavelength switching for each pulse. In this case, due to differences in chromatic aberration at each wavelength, the peak positions that appear for each wavelength are different, and the calibration waveform shows light intensity measurement values ​​for the light pulses of each wavelength appearing alternately. Next, the configuration of the control system of this embodiment will be described.

[0025] The stage control unit 31 controls the synchronous movement of the reticle stage 13 and wafer stage 17, including the exposure surface positions during scanning exposure. The stage control unit 31 also measures the stage positions of the reticle stage 13 and wafer stage 17 using position measurement sensors (not shown) and acquires information on the position of each stage. The stage control unit 31 is controlled by control signals from a control unit (not shown), which will be described later.

[0026] The control unit (not shown) is configured as at least one computer including a CPU, memory (storage unit), etc., and is connected to each component of exposure apparatus 100 via a line. The control unit also performs overall control of the operation and adjustment of each component of exposure apparatus 100 in accordance with a program stored in the memory. The control unit may be configured integrally with other components of exposure apparatus 100 (in a common housing), or may be configured separately from other components of exposure apparatus 100 (in a different housing), or may be installed in a location separate from exposure apparatus 100 and controlled remotely. While at least one CPU and one memory are required, multiple CPUs and memories may be included. The characteristic data division unit 32 and exposure condition calculation unit 33 described below will be described as blocks (functional units) within the control unit of exposure apparatus 100. In other words, the control unit of exposure apparatus 100 has characteristic data division unit 32 and exposure condition calculation unit 33 as its functional units. The stage control unit 31 may also be configured as a block (functional unit) within the control unit of exposure apparatus 100.

[0027] The characteristic data dividing unit 32 acquires time-division information from the light source 1, which is capable of irradiating pulsed light of multiple wavelengths, and divides the characteristic data for each wavelength based on the time-division information. In this embodiment, the time-division information includes at least one of the output cycle for each wavelength of the pulsed light irradiated from the light source 1 and the number of wavelengths. The characteristic data also includes output values ​​from the light intensity sensors of the exposure apparatus 100, i.e., light intensity measurement values ​​acquired from the energy measurement units 6 and 18. The characteristic data also includes stage position measurement values ​​acquired from the stage control unit 31, i.e., position measurement information for the reticle stage 13 and the wafer stage 17. The characteristic data also includes a charging voltage value (a charging voltage value for the light source 1) commanded to the light source 1. The characteristic data may include at least one of the light intensity measurement values, which are output values ​​from the light intensity sensors of the exposure apparatus 100, the stage position measurement values, and the voltage command value (a charging voltage command value) commanded to the light source 1. In this embodiment, the light intensity measurement values ​​and the stage position measurement values ​​are used as the characteristic data. Based on the time division information of multiple wavelengths obtained from the light source 1, the characteristic data division unit 32 divides the charging voltage value commanded to the light source 1, the light intensity measurement values ​​obtained from the energy measurement units 6 and 18, and the stage position measurement values ​​obtained from the stage control unit 31 into multiple data strings for each wavelength.

[0028] The exposure condition calculation unit 33 calculates exposure conditions based on the characteristic data divided by the characteristic data division unit 32. That is, the exposure condition calculation unit 33 calculates optimal exposure conditions for the exposure apparatus 100 from each measurement data group stored in the multiple data strings divided for each wavelength by the characteristic data division unit 32. In other words, the exposure condition calculation unit 33 calculates, as the exposure condition, the stage position (optimum exposure position) when exposing the wafer 16 from each measurement data group stored in the multiple data strings divided for each wavelength by the characteristic data division unit 32.

[0029] As described above, in this embodiment, first, the characteristic data dividing unit 32 acquires time division information from the light source 1 capable of irradiating multiple wavelengths, and then performs a process of dividing the characteristic data for each wavelength based on the time division information (specific data dividing step). After that, the exposure condition calculation unit 33 performs a process of calculating the exposure conditions based on the divided characteristic data (exposure condition calculation step), thereby making it possible to calculate the optimal exposure conditions for the exposure apparatus 100.

[0030] The following describes the operation (processing) of exposure apparatus 100 of this embodiment. This operation makes it possible to align reticle stage 13 and wafer stage 17 while keeping light source 1 in dual wavelength mode, while maintaining the same alignment accuracy as in single wavelength mode.

[0031] For example, if the time-division information acquired by the characteristic data division unit 32 from the light source 1 is "number of wavelengths = 2, number of wavelength switching pulses = 2," the characteristic data division unit 32 first prepares two storage areas for data strings. Next, the storage locations for the light intensity measurement values ​​and stage position measurement values ​​are allocated for each wavelength, such as storing the light intensity measurement value and stage position measurement value of the first pulse in data string 1, storing the second pulse in data string 2, storing the third pulse in data string 1, and storing the fourth pulse in data string 2. This makes it possible to obtain, for each wavelength, a calibration waveform equivalent to that for single-wavelength oscillation shown in FIG. 6. Note that although only the first four pulses are described above, this is an example, and the characteristic data division unit 32 allocates subsequent pulses in the same manner.

[0032] Figure 6 shows an example of dividing the calibration waveform shown in Figure 4 by wavelength. For example, if the first wavelength (λ1) of the optical pulses output from light source 1 is 247.995 nm and the second wavelength (λ2) is 248.005 nm, Figure 6(A) shows a waveform obtained by extracting only the data group for λ1. Figure 6(B) shows a waveform obtained by extracting only the data group for λ2.

[0033] Next, the exposure condition calculation unit 33 detects the light intensity peak position for each wavelength using the wavelength-specific data string of the light intensity measurement value and stage position measurement value, which are the acquired characteristic data. Specifically, it detects the peak position (light intensity peak detection position) for each of the two calibration waveforms acquired from the characteristic data division unit 32. Then, it calculates a statistical value (e.g., average value) of the two peak position detection results as the imaging position during wafer exposure. In other words, the exposure condition calculation unit 33 calculates the stage position (optimum exposure position), which is the imaging position during wafer exposure, based on the peak position detection results of the two calibration waveforms detected above.

[0034] The above operation enables the alignment of the reticle stage 13 and the wafer stage 17 in the dual-wavelength mode to be equivalent to that in the single-wavelength mode. In other words, the alignment of the reticle stage 13 and the wafer stage 17 can be performed in the same multiple-wavelength mode as during wafer exposure. Therefore, with the exposure apparatus 100 of this embodiment, it is possible to omit the process of switching between the single-wavelength mode and the multiple-wavelength mode (e.g., lock oscillation operation) during alignment and exposure. This eliminates the time delay that occurs due to the switching process, thereby improving productivity (throughput).

[0035] Furthermore, the operation of this embodiment can be extended to any time division information such as "number of wavelengths = n, number of wavelength switching pulses = m." In other words, the characteristic data division unit 32 can prepare n storage areas and shift the storage area for the data group every m pulses.

[0036] Furthermore, the exposure condition calculation unit 33 detects the peak position (light intensity peak detection position) for each of the n calibration waveforms acquired from the characteristic data division unit 32, and calculates the optimal exposure position, which is the imaging position during wafer exposure, using, for example, the following equation (1). Note that Pt represents the optimal exposure position, αk represents a wavelength-specific weighting coefficient (weighting coefficient for each wavelength), and Pk represents the wavelength-specific peak detection position. That is, when the wavelength-specific weighting coefficient is αk and the wavelength-specific peak detection position is Pk, the exposure condition calculation unit 33 calculates the optimal exposure position Pt from the wavelength-specific light intensity peak detection position using the following equation (1).

number

[0037] Here, when the wavelength-specific weighting coefficient αk=1 / n, the optimal exposure position is the average value of n peak positions. The wavelength-specific weighting coefficient αk may also be optimized for each pattern shape to be formed. In this embodiment, the weighting coefficients are calculated in advance using an image calculation simulator. Alternatively, the weighting coefficients may be obtained by feedback optimization of exposure results (e.g., CD measurement results using an SEM, etc.). This allows statistical processing parameters (e.g., weighting coefficients used in averaging processing) to be optimized for each process, thereby improving printing accuracy.

[0038] <Embodiment 2> Below, as embodiment 2, an exposure apparatus 100 will be described that can maintain the same performance in terms of integrated exposure dose control accuracy during wafer exposure with a multiple wavelength laser (pulsed light irradiated in multiple wavelength mode) as when using a single wavelength laser (pulsed light irradiated in single wavelength mode). Note that the configuration and each functional unit of exposure apparatus 100 in embodiment 2 are the same as exposure apparatus 100 in embodiment 1, and therefore description thereof will be omitted. Furthermore, description of the same points as in embodiment 1 will be omitted, and only the points that differ from embodiment 1 will be described below.

[0039] Figure 7 shows an example of exposure dose control accuracy when the light source 1 is a single-wavelength laser and when it is a dual-wavelength laser (pulsed light irradiated in dual-wavelength mode). The horizontal axis represents the shot number within the wafer surface (for 180 shots), and the vertical axis represents the standard deviation of the light dose measurement values ​​for 100 pulses per shot by the energy measurement unit 6. The graph in Figure 7 shows that when the conventional exposure dose control method is applied when a dual-wavelength laser is used (solid line), the pulse variation within each shot is greater than when a single-wavelength laser is used (dotted line).

[0040] Figure 8 shows the charge voltage command value (solid line) and light intensity measurement value (dotted line) for the final 100 pulses of the shot when using a dual-wavelength laser (solid line graph) in Figure 7. Here, the relationship between the charge voltage value and the pulse output energy from light source 1 (dE / dV characteristics) differs for each wavelength, so when using a dual-wavelength laser, both the charge voltage value and the light intensity measurement value tend to be polarized for each wavelength, as shown in Figure 8. Therefore, if feedback control of the exposure amount is performed using the same method as when using a single-wavelength laser, that is, while mixing dual-wavelength data, the control accuracy will deteriorate due to the influence of each other's data.

[0041] To solve the above problem, in the second embodiment, when the time-division information obtained from the light source 1 is, for example, "number of wavelengths = 2, number of wavelength switching pulses = 2," the characteristic data division unit 32 first prepares two storage areas for data strings. Next, the characteristic data division unit 32 allocates the storage locations for the charging voltage values ​​and light intensity measurement values ​​for each wavelength, such as storing the charging voltage value and light intensity measurement value for the first pulse in data string 1, the second pulse in data string 2, the third pulse in data string 1, and the fourth pulse in data string 2. This enables feedback control of the integrated exposure amount for each wavelength. In the second embodiment, the charging voltage value and light intensity measurement value are used as characteristic data. Although only the first four pulses are described above, this is an example, and the characteristic data division unit 32 allocates the data for subsequent pulses in the same manner.

[0042] Fig. 9 is a diagram showing an example in which the data string in Fig. 7 is divided by wavelength. In the second embodiment, the conditions for the dual-wavelength mode are the same as those in the first embodiment, so Fig. 9(A) is a graph in which only the λ1 data group is extracted from Fig. 8. Also, Fig. 9(B) is a graph in which only the λ2 data group is extracted.

[0043] The exposure condition calculation unit 33 of the second embodiment calculates a charging voltage command value for the next pulse emission for each wavelength based on the actual data string (data string for each wavelength) of the charging voltage value and light intensity measurement value for each wavelength acquired as the exposure condition from the characteristic data division unit 32. Then, it commands the calculated charging voltage command value to the light source 1. In this case, the charging voltage can be calculated using a conventional feedback control calculation formula for the data string for each wavelength.

[0044] In this way, the exposure conditions calculated by the exposure condition calculation unit 33 include the stage position (optimum exposure position) when exposing the wafer 16 in the first embodiment, and include a charging voltage command value to the light source 1 in the second embodiment. Note that in each of the above embodiments, the exposure condition calculation unit 33 may calculate the exposure conditions so as to include both the stage position (optimum exposure position) and the charging voltage command value to the light source 1.

[0045] Furthermore, the operation of exposure apparatus 100 in embodiment 2 can be extended to any time division information "number of wavelengths = n, number of wavelength switching pulses = m" as in embodiment 1. That is, characteristic data division unit 32 simply prepares n storage areas and shifts the storage area for the data group every m pulses. Furthermore, exposure condition calculation unit 33 simply performs feedback control calculation of the integrated exposure amount for each of the n data strings obtained from characteristic data division unit 32, and provides a charging voltage command value to light source 1 according to the wavelength of the next pulse.

[0046] As described above, according to exposure apparatus 100 of embodiment 2, even in a multiple wavelength (e.g., dual wavelength) mode, it is possible to perform control equivalent to that in a single wavelength for each data row, thereby eliminating deterioration in the accuracy of integrated exposure dose control. Therefore, even when exposing a wafer in a multiple wavelength mode such as dual wavelength mode, it is possible to achieve the same accuracy of integrated exposure dose control as in single wavelength mode.

[0047] <Embodiments of manufacturing methods of articles> Next, a method for manufacturing an article (such as a semiconductor IC element, a liquid crystal display element, or a MEMS) using the exposure apparatus 100 will be described. The article can be manufactured by sequentially performing an exposure process and a development process using the above-described exposure apparatus 100. The exposure process is a process for obtaining an exposed substrate by exposing a substrate (such as a wafer or a glass substrate) coated with a photosensitive agent. The development process is a process for obtaining a developed substrate by developing the exposed substrate (photosensitive agent) obtained in the exposure process. The developed substrate developed in the development process is then processed in other well-known processes to manufacture the article. Other well-known processes include etching, resist stripping, dicing, bonding, packaging, and the like. This article manufacturing method makes it possible to manufacture articles of higher quality than conventional methods.

[0048] The embodiment described above is merely a typical example, and various modifications and changes can be made to the embodiment when implementing the present invention.

[0049] Furthermore, a computer program that realizes part or all of the functions of each of the above-described embodiments may be supplied to exposure apparatus 100 or the like via a network or various storage media. A computer (or a processor such as a CPU or MPU) in the apparatus may then read and execute the program. In this case, the program and the storage medium storing the program constitute the present invention. It may also be realized by a circuit (e.g., an ASIC) that realizes one or more functions.

[0050] The disclosure of this embodiment includes the following configurations and methods.

[0051] (Configuration 1) An exposure apparatus, a light source capable of irradiating pulsed light of multiple wavelengths; a characteristic data dividing unit that acquires time division information from the light source and divides characteristic data for each wavelength based on the time division information; a calculation unit that calculates exposure conditions based on the characteristic data divided by the characteristic data division unit, An exposure apparatus characterized by:

[0052] (Configuration 2) 2. The exposure apparatus according to configuration 1, wherein the time division information is information including at least one of an output cycle for each wavelength of the pulsed light and the number of wavelengths.

[0053] (Configuration 3) 3. The exposure apparatus according to configuration 1 or 2, wherein the characteristic data includes at least one of an output value of a light intensity sensor provided in the exposure apparatus, a stage position measurement value, and a voltage command value to the light source.

[0054] (Configuration 4) 4. The exposure apparatus according to any one of configurations 1 to 3, wherein the exposure conditions calculated by the calculation unit include at least one of a stage position when exposing a substrate and a voltage command value to the light source.

[0055] (Configuration 5) The exposure apparatus according to configuration 4, wherein the calculation unit detects the light intensity peak position for each wavelength using the output value of a light intensity sensor provided in the exposure apparatus and a data string for each wavelength of the measurement value of the stage position.

[0056] (Configuration 6) When the weighting coefficient for each wavelength is αk and the peak detection position for each wavelength is Pk, the calculation unit calculates (Number 1) 6. The exposure apparatus according to any one of configurations 1 to 5, wherein the optimum exposure position Pt is calculated from the light intensity peak detection position for each wavelength using the formula TIFF2026007585000003.tif27154.

[0057] (Configuration 7) 7. The exposure apparatus according to configuration 6, wherein the weighting coefficients are obtained by calculation using an image calculation simulator or optimization using exposure results.

[0058] (Configuration 8) The exposure apparatus described in any one of configurations 1 to 7, characterized in that the calculation unit determines the voltage command value of the next pulse for each wavelength based on the output value of a light intensity sensor possessed by the exposure apparatus obtained from the characteristic data division unit and a data string for each wavelength of a voltage command value to the pulsed light.

[0059] (Configuration 9) An exposure method comprising: a characteristic data dividing step of acquiring time division information from a light source capable of irradiating pulsed light of a plurality of wavelengths and dividing the characteristic data for each wavelength based on the time division information; an exposure condition calculation step of calculating exposure conditions based on the characteristic data divided in the characteristic data division step; An exposure method characterized by:

[0060] (Configuration 10) an exposure step of exposing a substrate using the exposure apparatus according to any one of configurations 1 to 9 to obtain an exposed substrate; a developing step of developing the exposed substrate to obtain a developed substrate, A method for manufacturing an article, comprising manufacturing an article from the developed substrate. [Explanation of symbols]

[0061] 1 light source 2 Beam shaping section 3 Optical Integrator 4 Aperture turret 5 Half mirror 6 Energy measurement section 7 Condenser Lens 8. Blinds 9 Slit 10. Mirror 11 Condenser lens 12 reticle 13 Reticle stage 14 Projection optical system 15 Focus detection system 16 wafers 17 Wafer stage 18 Energy measurement unit 21 Reticle Reference Plate 22 Reticle fiducial marks 31 Stage control section 32 Characteristic data division section 33 Exposure condition calculation unit

Claims

1. An exposure apparatus, a light source capable of irradiating pulsed light of multiple wavelengths; a characteristic data dividing unit that acquires time division information from the light source and divides characteristic data for each wavelength based on the time division information; a calculation unit that calculates exposure conditions based on the characteristic data divided by the characteristic data division unit, An exposure apparatus characterized by:

2. 2. An exposure apparatus according to claim 1, wherein the time division information includes at least one of an output cycle for each wavelength of the pulsed light and the number of wavelengths.

3. 2. The exposure apparatus according to claim 1, wherein the characteristic data includes at least one of an output value of a light intensity sensor provided in the exposure apparatus, a stage position measurement value, and a voltage command value for the light source.

4. 2. The exposure apparatus according to claim 1, wherein the exposure conditions calculated by the calculation unit include at least one of a stage position when exposing a substrate and a voltage command value for the light source.

5. 5. The exposure apparatus according to claim 4, wherein the calculation unit detects a light intensity peak position for each wavelength using an output value of a light intensity sensor provided in the exposure apparatus and a data string for each wavelength of the measurement value of the stage position.

6. When the weighting coefficient for each wavelength is αk and the peak detection position for each wavelength is Pk, the calculation unit calculates [Equation 1] 2. The exposure apparatus according to claim 1, wherein the optimum exposure position Pt is calculated from the light intensity peak detection position for each wavelength using the following formula:

7. 7. The exposure apparatus according to claim 6, wherein the weighting coefficients are obtained by calculation using an image calculation simulator or optimization using exposure results.

8. The exposure apparatus according to claim 1, wherein the calculation unit determines the voltage command value of the next pulse for each wavelength based on the output value of the light intensity sensor of the exposure apparatus acquired from the characteristic data division unit and a data string for each wavelength of the voltage command value to the pulsed light.

9. An exposure method comprising: a characteristic data dividing step of acquiring time division information from a light source capable of irradiating pulsed light of a plurality of wavelengths and dividing the characteristic data for each wavelength based on the time division information; an exposure condition calculation step of calculating exposure conditions based on the characteristic data divided in the characteristic data division step; An exposure method characterized by:

10. an exposure step of exposing a substrate using the exposure apparatus according to any one of claims 1 to 9 to obtain an exposed substrate; a developing step of developing the exposed substrate to obtain a developed substrate, A method for manufacturing an article, comprising manufacturing an article from the developed substrate.

Images