Power unit

Abstract

To provide a power unit capable of appropriately connecting a power module and a capacitor module.SOLUTION: The power unit C10 includes a power module A10 having a power conversion circuit, first power terminals 41, and second power terminals 42, and a capacitor module B10 having capacitor elements, first power terminals 81 connected to the first power terminals 41, and second power terminals 82 connected to the second power terminals 42. The first supply terminal 41 and the second supply terminal 42 are arranged in the first direction y, and are located at different positions in the thickness direction z, which is a specific direction intersecting the first direction y. The first output terminal 41 and the second output terminal 42 are arranged in the first direction y and are located at different positions in the thickness direction z, which is the specific direction.SELECTED DRAWING: Figure 7

Description

[Technical Field]

[0001] The present disclosure relates to a power unit. [Background technology]

[0002] Power units that perform power conversion functions, for example, as inverters connected to a DC power source, and are widely used as units that convert DC power and supply the resulting AC power to motors, etc. Patent Document 1 discloses an example of a semiconductor device used in a conventional power unit. The semiconductor device disclosed in this document functions as a power module and includes multiple switching elements, a first power supply terminal, a second power supply terminal, and an output terminal. The multiple switching elements form a half-bridge circuit, which is an example of a power conversion circuit. The first power supply terminal and the second power supply terminal are stacked with a terminal insulating member sandwiched between them. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] WO2019 / 098368 publication Summary of the Invention [Problem to be solved by the invention]

[0004] The power unit may be provided with a capacitor module. The capacitor module is electrically connected between a DC power supply and a semiconductor device. Depending on the arrangement of the first power supply terminal and the second power supply terminal, it may be difficult to properly connect the capacitor module.

[0005] The present disclosure has been conceived in light of the above circumstances, and an object of the present disclosure is to provide a power unit that is capable of appropriately connecting a power module and a capacitor module. [Means for solving the problem]

[0006] The power unit provided by the present disclosure comprises a power module having a power conversion circuit, a first power supply terminal, and a second power supply terminal, and a capacitor module having a capacitor element, a first output terminal connected to the first power supply terminal, and a second output terminal connected to the second power supply terminal, wherein the first power supply terminal and the second power supply terminal are aligned in a first direction and have different positions in a specific direction intersecting the first direction, and the first output terminal and the second output terminal are aligned in the first direction and have different positions in the specific direction. [Effects of the Invention]

[0007] According to the present disclosure, the power module and the capacitor module can be appropriately connected.

[0008] Other features and advantages of the present disclosure will become more apparent from the following detailed description taken in conjunction with the accompanying drawings. [Brief explanation of the drawings]

[0009] [Figure 1] FIG. 1 is a perspective view showing a power module according to a first embodiment of the present disclosure. [Figure 2] FIG. 2 is a partial perspective view showing a power module of the power unit according to the first embodiment of the present disclosure. [Figure 3] FIG. 3 is a plan view showing a power module of the power unit according to the first embodiment of the present disclosure. [Figure 4] FIG. 4 is a partial plan view showing a power module of the power unit according to the first embodiment of the present disclosure. [Figure 5] FIG. 5 is a front view showing the power module of the power unit according to the first embodiment of the present disclosure. [Figure 6] FIG. 6 is a bottom view showing the power module of the power unit according to the first embodiment of the present disclosure. [Figure 7]FIG. 7 is a left side view showing the power module of the power unit according to the first embodiment of the present disclosure. [Figure 8] FIG. 8 is a right side view showing the power module of the power unit according to the first embodiment of the present disclosure. [Figure 9] FIG. 9 is a cross-sectional view taken along line IX-IX in FIG. [Figure 10] FIG. 10 is a cross-sectional view showing a capacitor module of a power unit according to the first embodiment of the present disclosure. [Figure 11] FIG. 11 is a circuit diagram of the power unit according to the first embodiment of the present disclosure. [Figure 12] FIG. 12 is a cross-sectional view showing a first modified example of the power module of the power unit according to the first embodiment of the present disclosure. [Figure 13] FIG. 13 is a cross-sectional view showing a second modified example of the power module of the power unit according to the first embodiment of the present disclosure. [Figure 14] FIG. 14 is a left side view showing a third modified example of the power unit according to the first embodiment of the present disclosure. [Figure 15] FIG. 15 is a perspective view showing a power module of a power unit according to the second embodiment of the present disclosure. [Figure 16] FIG. 16 is a plan view showing a power module of a power unit according to the second embodiment of the present disclosure. [Figure 17] FIG. 17 is a partial plan view showing a power module of a power unit according to the second embodiment of the present disclosure. [Figure 18] FIG. 18 is a bottom view showing the power module of the power unit according to the second embodiment of the present disclosure. [Figure 19] FIG. 19 is a left side view showing a power module of a power unit according to a second embodiment of the present disclosure. [Figure 20] FIG. 20 is a cross-sectional view taken along the line XX-XX in FIG. [Figure 21] FIG. 21 is a cross-sectional view taken along line XXI-XXI in FIG. [Figure 22]FIG. 22 is a cross-sectional view taken along line XXII-XXII in FIG. DETAILED DESCRIPTION OF THE INVENTION

[0010] Preferred embodiments of the present disclosure will now be described in detail with reference to the drawings.

[0011] The terms "first," "second," "third," etc. in this disclosure are used for identification purposes only and are not intended to impose any ranking on their objects.

[0012] In this disclosure, unless otherwise specified, the terms "a certain object A is formed on an object B" and "a certain object A is formed on an object B" include "a certain object A is formed directly on an object B" and "a certain object A is formed on an object B with another object interposed between the objects A and B." Similarly, the terms "a certain object A is disposed on an object B" and "a certain object A is disposed on an object B" include "a certain object A is disposed directly on an object B" and "a certain object A is disposed on an object B with another object interposed between the objects A and B," unless otherwise specified. Similarly, the term "a certain object A is located on an object B" includes "a certain object A is located on an object B in contact with the object B" and "a certain object A is located on an object B with another object interposed between the objects A and B," unless otherwise specified. Furthermore, unless otherwise specified, the phrase "an object A overlaps an object B when viewed in a certain direction" includes "an object A overlaps the entire object B" and "an object A overlaps a part of an object B." Furthermore, in this disclosure, "a surface A faces (one side or the other side of) direction B" is not limited to the case where the angle of surface A with respect to direction B is 90°, but also includes the case where surface A is tilted with respect to direction B.

[0013] First Embodiment 1 to 11 show a power unit according to a first embodiment of the present disclosure. The power unit C10 of this embodiment includes a power module A10 and a capacitor module B10. The power unit C10 is connected to a DC power source, such as a battery, and a load, such as a motor. The power unit C10 functions as an inverter that converts DC power from the DC power source into AC power and outputs the AC power to the load. However, the function of the power unit of the present disclosure is not limited in any way as long as it converts input power into desired power.

[0014] [Power Module A10] The power module A10 of this embodiment includes a support 1, a plurality of first semiconductor elements 2A, a plurality of second semiconductor elements 2B, a sealing body 3, a plurality of main current terminals 4, a plurality of control terminals 5, a first conductive member 61, and a second conductive member 62.

[0015] FIG. 1 is a perspective view showing a power unit C10. FIG. 2 is a partial perspective view showing a power module A10. FIG. 3 is a plan view showing the power module A10. FIG. 4 is a partial plan view showing the power module A10. FIG. 5 is a front view showing the power module A10. FIG. 6 is a bottom view showing the power module A10. FIG. 7 is a left side view showing the power module A10. FIG. 8 is a right side view showing the power module A10. FIG. 9 is a cross-sectional view taken along line IX-IX in FIG. 4. FIG. 10 is a cross-sectional view showing a capacitor module of a power unit according to a first embodiment of the present disclosure. FIG. 11 is a circuit diagram of the power unit C10. In these figures, the thickness direction of the support 1 is the thickness direction z. A direction perpendicular to the thickness direction z is defined as a first direction y, and a direction perpendicular to the first direction y and the thickness direction z is defined as a second direction x.

[0016] [Support 1] The support 1 supports a plurality of first semiconductor elements 2A and a plurality of second semiconductor elements 2B. The specific configuration of the support 1 is not limited in any way, and in this embodiment, the support 1 includes a first metal layer 11, a second metal layer 12, an intermediate layer 13, and an insulating layer 14. Instead of a support 1 having such a structure, a DBC (Direct Bonded Copper) substrate or an AMB (Active Metal Brazing) substrate may be used as the support 1.

[0017] The first metal layer 11 is formed on the lower surface (surface facing the z1 side in the thickness direction z) of the intermediate layer 13. The constituent material of the first metal layer 11 includes, for example, Cu (copper). The first metal layer 11 includes a first region 11A and a second region 11B.

[0018] The second metal layer 12 is formed on the upper surface (surface facing the z2 side in the thickness direction z) of the intermediate layer 13. The constituent material of the second metal layer 12 includes, for example, Cu (copper). The second metal layer 12 includes a first region 12A and a second region 12B.

[0019] The first region 12A and the second region 12B are spaced apart in the second direction x. The first region 12A is located on the x1 side of the second region 12B in the second direction x. The first region 12A and the second region 12B each have, for example, a rectangular shape in a plan view. The first region 12A and the second region 12B, together with the first conductive member 61 and the second conductive member 62, form a path for a main circuit current that is switched by the multiple first semiconductor elements 2A and the multiple second semiconductor elements 2B.

[0020] The intermediate layer 13 is a layer whose main component is, for example, graphite, which has excellent thermal conductivity. Unlike this embodiment, when the support 1 is a DBC (Direct Bonded Copper) substrate or an AMB (Active Metal Brazing) substrate, the intermediate layer 13 is mainly made of ceramics. Examples of such ceramics include Al2O3 (alumina) and SiN (silicon nitride). The intermediate layer 13 includes a first region 13A and a second region 13B.

[0021] The insulating layer 14 is formed on the lower surface (surface facing the z1 side in the thickness direction z) of the first metal layer 11. The insulating layer 14 is mainly composed of, for example, ceramics. Examples of such ceramics include AlN (aluminum nitride), SiN (silicon nitride), and Al2O3 (aluminum oxide). The insulating layer 14 includes a first region 14A and a second region 14B. Note that if the support 1 is a DBC (Direct Bonded Copper) substrate or an AMB (Active Metal Brazing) substrate, the support 1 may not have the insulating layer 14.

[0022] In this embodiment, first regions 11A, 12A, 13A, and 14A are stacked, and second regions 11B, 12B, 13B, and 14B are stacked.

[0023] [Multiple first semiconductor elements 2A, multiple second semiconductor elements 2B] The multiple first semiconductor elements 2A and the multiple second semiconductor elements 2B are electronic components that are the functional core of the power module A10. The constituent material of each of the first semiconductor elements 2A and each of the second semiconductor elements 2B is a semiconductor material primarily made of, for example, silicon carbide (SiC). This semiconductor material is not limited to SiC and may be silicon (Si), gallium nitride (GaN), diamond (C), or the like. Each of the first semiconductor elements 2A and each of the second semiconductor elements 2B is a power semiconductor chip having a switching function, such as a metal oxide semiconductor field effect transistor (MOSFET).

[0024] In this embodiment, the first semiconductor element 2A and the second semiconductor element 2B are MOSFETs, but are not limited thereto and may be other transistors such as IGBTs (Insulated Gate Bipolar Transistors). Each of the first semiconductor elements 2A and each of the second semiconductor elements 2B are the same element. Each of the first semiconductor elements 2A and each of the second semiconductor elements 2B is, for example, an n-channel MOSFET, but may also be a p-channel MOSFET.

[0025] The drain electrodes of the plurality of first semiconductor elements 2A are conductively joined to the first region 12A, and the drain electrodes of the plurality of second semiconductor elements 2B are conductively joined to the second region 12B.

[0026] [Sealing body 3] The encapsulant 3 covers the first semiconductor elements 2A, the second semiconductor elements 2B, a portion of the support 1, a portion of each of the main current terminals 4, a portion of each of the control terminals 5, the first conductive member 61, and the second conductive member 62. The specific configuration of the encapsulant 3 is not limited, and the encapsulant 3 of this embodiment is made of, for example, a black epoxy resin. The encapsulant 3 is formed by, for example, molding. As shown in FIGS. 1 and 3 to 9, the encapsulant 3 has a first surface 301, a second surface 302, a third surface 303, a fourth surface 304, a fifth surface 305, and a sixth surface 306.

[0027] The first surface 301 faces the z2 side in the thickness direction z. The second surface 302 faces the z1 side in the thickness direction z. The third surface 303 faces the x1 side in the second direction x. The fourth surface 304 faces the x2 side in the second direction x. The fifth surface 305 faces the y1 side in the first direction y. The sixth surface 306 faces the y2 side in the first direction y. In this embodiment, the insulating layer 14 is exposed from the second surface 302.

[0028] [Multiple main current terminals 4] The main current terminals 4 are terminals through which the main current switched by the power module A10 is input and output. As shown in FIGS. 1 to 9, in this embodiment, the main current terminals 4 include a first power supply terminal 41, a second power supply terminal 42, and an output terminal 43. Each of these main current terminals 4 is made of a plate-shaped metal plate. This metal plate contains, for example, Cu (copper) or a Cu (copper) alloy.

[0029] The first power supply terminal 41 is disposed on the x1 side in the second direction x. The first power supply terminal 41 is directly bonded to the first region 12A using, for example, a conductive bonding material. This allows the first power supply terminal 41 to be electrically connected to the drain electrodes of the multiple first semiconductor elements 2A. The first power supply terminal 41 protrudes from the third surface 303 of the sealing body 3. In the illustrated example, the first power supply terminal 41 has a mounting hole 411. The mounting hole 411 penetrates the first power supply terminal 41 in the thickness direction z and is, for example, circular.

[0030] The second power supply terminal 42 is disposed on the x1 side in the second direction x and on the y2 side of the first power supply terminal 41 in the first direction y. That is, the first power supply terminal 41 and the second power supply terminal 42 are aligned in the first direction y. The second power supply terminal 42 is conductively connected to the source electrodes of the plurality of second semiconductor elements 2B via a second conductive member 62. The second conductive member 62 is conductively connected to the source electrodes of the plurality of second semiconductor elements 2B via a spacer 626. The spacer 626 contains, for example, Cu (copper) or a Cu (copper) alloy. The second conductive member 62 includes, for example, a plate-shaped metal plate. This metal plate contains, for example, Cu (copper) or a Cu (copper) alloy. The second conductive member 62 may be formed integrally with the second power supply terminal 42. The second power supply terminal 42 protrudes from the third surface 303 of the sealing body 3. In the illustrated example, the second power supply terminal 42 has an attachment hole 421. The mounting hole 421 penetrates the second power terminal 42 in the thickness direction z and is, for example, circular.

[0031] 5, 7, and 9, the first power supply terminal 41 and the second power supply terminal 42 are located at different positions in the thickness direction z. In the illustrated example, the thickness direction z corresponds to the specific direction of the present disclosure. The distance da between the upper surface of the first power supply terminal 41 (the surface on the z2 side in the thickness direction z) and the upper surface of the second power supply terminal 42 (the surface on the z2 side in the thickness direction z) is set in consideration of connection with the capacitor module B10. As shown in FIG. 9, in the illustrated example, the distance da is set mainly by providing a spacer 626.

[0032] The output terminal 43 is disposed on the x2 side in the second direction x and protrudes from the fourth surface 304 of the sealing body 3. The output terminal 43 is conductively connected to the second region 12B via a spacer 436. The spacer 436 contains, for example, Cu (copper) or a Cu (copper) alloy. The second region 12B is also conductively connected to the source electrodes of the multiple first semiconductor elements 2A via first conductive members 61. As a result, the output terminal 43 is conductively connected to the source electrodes of the multiple first semiconductor elements 2A and the drain electrodes of the multiple second semiconductor elements 2B. The first conductive members 61 are made of, for example, a plate-shaped metal plate. This metal plate contains, for example, Cu (copper) or a Cu (copper) alloy.

[0033] [Multiple control terminals 5] The multiple control terminals 5 are terminals through which control signals, detection signals, etc. for operating the power module A10 are input and output. As shown in Fig. 8, the multiple control terminals 5 protrude from the fifth surface 305 of the sealing body 3 to the y1 side in the first direction y. Furthermore, the multiple control terminals 5 have a bent shape, with their tips extending to the z2 side in the thickness direction z.

[0034] The multiple control terminals 5 include a first gate terminal 51A and a second gate terminal 51B. The first gate terminal 51A is electrically connected to the gate electrodes of the multiple first semiconductor elements 2A. The second gate terminal 51B is electrically connected to the gate electrodes of the multiple second semiconductor elements 2B. The other control terminals 5 are used as appropriate, for example, a source sense terminal, a temperature monitoring terminal, a current monitoring terminal, a voltage monitoring terminal, etc.

[0035] [Capacitor module B10] 10, the capacitor module B10 includes a capacitor element 80, a first output terminal 81, a second output terminal 82, a first metal plate 83, a second metal plate 84, an input terminal 85, an input terminal 86, an insulating layer 87, and a sealing resin 88. Note that the specific configuration of the capacitor module B10 is not limited to the configuration shown in the figure.

[0036] The capacitor element 80 is an element configured, for example, by a film capacitor. The specific configuration and number of the capacitor elements 80 are not limited in any way. The capacitor element 80 may be an element of a type other than a film capacitor. Furthermore, the number of capacitor elements 80 may be one or more.

[0037] The first output terminal 81 and the second output terminal 82 are terminals through which power is output from the capacitor module B10 and are connected to the power module A10. The first output terminal 81 and the second output terminal 82 protrude from the sealing resin 88 toward the x2 side in the second direction x. As shown in FIGS. 1 and 7, the first output terminal 81 and the second output terminal 82 are aligned in the first direction y. The first output terminal 81 is located on the y1 side in the first direction y, and the second output terminal 82 is located on the y2 side in the first direction y. The first output terminal 81 and the second output terminal 82 are located at different positions in the thickness direction z (the method of identification in this example). In the illustrated example, the first output terminal 81 has a mounting hole 811. The mounting hole 811 penetrates the first output terminal 81 in the thickness direction z and is, for example, circular. The second output terminal 82 has a mounting hole 821. The mounting hole 821 penetrates the second output terminal 82 in the thickness direction z and is, for example, circular.

[0038] In the illustrated example, the first output terminal 81 and the first power supply terminal 41 are connected to each other and, in this example, are fixed by a bolt 91 and a nut 93. The bolt 91 is inserted through a mounting hole 811 of the first output terminal 81 and a mounting hole 411 of the first power supply terminal 41. The nut 93 is threadedly engaged with the bolt 91. Furthermore, the second output terminal 82 and the second power supply terminal 42 are connected to each other and, in this example, are fixed by a bolt 92 and a nut 94. The bolt 92 is inserted through a mounting hole 821 of the second output terminal 82 and a mounting hole 421 of the second power supply terminal 42. The nut 94 is threadedly engaged with the bolt 92.

[0039] The specific manner in which the first output terminal 81 and the first power supply terminal 41 are fixed to the second output terminal 82 and the second power supply terminal 42 is not limited to any particular form. In addition to the screwing described above, various methods of fixing can be used, such as joining by welding or mechanical fitting. Furthermore, the first output terminal 81 and the first power supply terminal 41 and the second output terminal 82 and the second power supply terminal 42 are not limited to being fixed to each other, as long as they are connected to each other. The specific manner of connection is not limited to any particular form, and any connection (e.g., contact) is sufficient as long as the relative positional relationship between the first output terminal 81 and the first power supply terminal 41 and the relative positional relationship between the second output terminal 82 and the second power supply terminal 42 are in the desired relationship.

[0040] The first output terminal 81 is located on the z1 side in the thickness direction z, and the second output terminal 82 is located on the z2 side in the thickness direction z. The first output terminal 81 is disposed on the z2 side in the thickness direction z with respect to the first power supply terminal 41. The second output terminal 82 is disposed on the z2 side in the thickness direction z with respect to the second power supply terminal 42. A distance db1 in the thickness direction z between the connection surface (the surface on the z1 side in the thickness direction z) of the first output terminal 81 and the connection surface (the surface on the z1 side in the thickness direction z) of the second output terminal 82 is the same as the distance da described above.

[0041] The first metal plate 83 is electrically connected to one electrode of the capacitor element 80. The first metal plate 83 includes, for example, Cu (copper) or a Cu (copper) alloy.

[0042] The second metal plate 84 is electrically connected to the other electrode of the capacitor element 80. The second metal plate 84 includes, for example, Cu (copper) or a Cu (copper) alloy.

[0043] The input terminals 85 and 86 are terminals through which power is input to the capacitor module B10 and are connected to a DC power source such as a battery. In the illustrated example, the input terminals 85 and 86 protrude from the sealing resin 88 to the x1 side in the second direction x.

[0044] In the illustrated example, the first output terminal 81 and the input terminal 85 are integrally formed with the first metal plate 83. Furthermore, the first output terminal 81 and the first metal plate 83 are connected flatly. The second output terminal 82 and the input terminal 86 are integrally formed with the second metal plate 84. Furthermore, the second output terminal 82 and the second metal plate 84 are connected flatly.

[0045] The distance db2 between the center of the first metal plate 83 in the thickness direction z and the center of the second metal plate 84 in the thickness direction z is the same as the above-mentioned distance db1.

[0046] The insulating layer 87 is sandwiched between the first metal plate 83 and the second metal plate 84. The insulating layer 87 insulates the first metal plate 83 and the second metal plate 84 from each other.

[0047] Sealing resin 88 covers capacitor element 80, first metal plate 83, and second metal plate 84. Sealing resin 88 is made of, for example, epoxy resin.

[0048] FIG. 11 shows the circuit configuration of a power unit C10. The power module A10 has a half-bridge circuit Ct0. The half-bridge circuit Ct0 is a power conversion circuit of the power module A10 and is an example of an inverter circuit. The half-bridge circuit Ct0 includes an upper arm circuit Ct1 and a lower arm circuit Ct2. The upper arm circuit Ct1 is configured by a first region 12A and a plurality of first semiconductor elements 2A electrically connected thereto. The plurality of first semiconductor elements 2A are connected in parallel between a first power supply terminal 41 and an output terminal 43. The gate electrodes of the plurality of first semiconductor elements 2A in the upper arm circuit Ct1 are connected in parallel to a first gate terminal 51A. A gate voltage is applied to the first gate terminal 51A by a drive circuit, such as a gate driver, arranged outside the power module A10, thereby simultaneously driving the plurality of first semiconductor elements 2A in the upper arm circuit Ct1.

[0049] The lower arm circuit Ct2 is composed of a second region 12B and a plurality of second semiconductor elements 2B electrically connected thereto. The plurality of second semiconductor elements 2B are connected in parallel between the output terminal 43 and the second power supply terminal 42. The gate electrodes of the plurality of second semiconductor elements 2B in the lower arm circuit Ct2 are connected in parallel to a second gate terminal 51B. A gate voltage is applied to the second gate terminal 51B by a drive circuit such as a gate driver arranged outside the power module A10, thereby simultaneously driving the plurality of second semiconductor elements 2B in the lower arm circuit Ct2.

[0050] The capacitor module B10 is connected to the first power supply terminal 41 and the second power supply terminal 42 of the power module A10. The capacitor element 80 is connected in parallel to the conductive path connecting the first output terminal 81 and the input terminal 85 and the conductive path connecting the second output terminal 82 and the input terminal 86.

[0051] Next, the operation of the power unit C10 will be described.

[0052] As shown in FIG. 7 , the first power supply terminals 41 and 42 are aligned in the first direction y and are positioned differently in the thickness direction z. With this configuration, when the capacitor module B10 is configured such that the first output terminal 81 and the second output terminal 82 are positioned differently in the thickness direction z, the first power supply terminals 41 and 81 can be more appropriately connected to the second power supply terminals 42 and 82. This allows the power module A10 and the capacitor module B10 to be more appropriately connected to each other. Furthermore, the first power supply terminals 41 and 81 can be more appropriately fixed to the second power supply terminals 42 and 82.

[0053] The distance da and the distance db1 being equal to each other is preferable for fixing the first power supply terminal 41 and the first output terminal 81, and the second power supply terminal 42 and the second output terminal 82, respectively.

[0054] The first output terminal 81 and the second output terminal 82 are both disposed on the z2 side in the thickness direction z with respect to the first power supply terminal 41 and the second power supply terminal 42. As a result, as shown in Fig. 1, by moving the capacitor module B10 closer to the power module A10 from the z2 side to the z1 side in the thickness direction z, the first power supply terminal 41 and the first output terminal 81 and the second power supply terminal 42 and the second output terminal 82 can be easily and reliably fixed.

[0055] 10, the first output terminal 81 is formed integrally with the first metal plate 83, and the second output terminal 82 is formed integrally with the second metal plate 84. The first metal plate 83 and the second metal plate 84 are laminated on top of each other. For this reason, the distance db1 between the first output terminal 81 and the second output terminal 82 tends to be approximately the same as the distance db2 between the first metal plate 83 and the second metal plate 84. The fact that the first power supply terminal 41 and the second power supply terminal 42 are positioned at different positions in the thickness direction z by the distance da is advantageous for connection to a capacitor module B10 configured in this way.

[0056] The first output terminal 81 and the first metal plate 83 are connected flatly, and the second output terminal 82 and the second metal plate 84 are connected flatly, thereby reducing the inductance in the capacitor module B10.

[0057] 12 to 22 show other embodiments of the present disclosure. In these figures, elements that are the same as or similar to those in the above embodiment are given the same reference numerals. Furthermore, the configurations of the various parts in each of the modified examples and each of the embodiments can be combined with each other as appropriate within the scope of not causing technical contradictions.

[0058] <First Modification of First Embodiment> 12 shows a first modified example of the power module A 10. The power module A11 of this embodiment differs from the above-described embodiments in that it has a spacer 416.

[0059] The first power supply terminal 41 is conductively connected to the first region 12A via a spacer 416. The spacer 416 contains, for example, Cu (copper) or a Cu (copper) alloy. In this modification, the distance da is set approximately by the difference in thickness between the spacer 626 and the spacer 416 in the thickness direction z.

[0060] This modification also makes it possible to more appropriately connect the first power supply terminal 41 and the first output terminal 81 to the second power supply terminal 42 and the second output terminal 82. In this modification, the distance da can be adjusted to a desired value by appropriately setting the thickness of the spacer 416.

[0061] <Second Modification of First Embodiment> 13 shows a second modified example of the power module A 10. In the power module A12 of this embodiment, the specific directions of the first power terminal 41 and the second power terminal 42 are different from those of the above-described example.

[0062] In this modification, the first power supply terminal 41 and the second power supply terminal 42 include a portion extending from the third surface 303 of the sealing body 3 toward the x1 side in the second direction x and a portion extending along the thickness direction z. The portions of the first power supply terminal 41 and the second power supply terminal 42 that are connected to the first output terminal 81 and the second output terminal 82 of the capacitor module B10 are located at different positions in the second direction x. That is, in this modification, the second direction x is a specific direction.

[0063] This modification also makes it possible to more appropriately connect the first power supply terminal 41 and the first output terminal 81 to the second power supply terminal 42 and the second output terminal 82. Furthermore, as can be understood from this modification, the specific direction of the present disclosure can be set to various directions.

[0064] <Third Modification of First Embodiment> 14 shows a third modified example of the power unit C10. In the power unit C13 of this modified example, the first power supply terminal 41 and the second power supply terminal 42 of the power module A10 are connected to the first output terminal 81 and the second output terminal 82 of the capacitor module B10 in a manner different from that of the power unit C10.

[0065] In this modification, the first output terminal 81 is located on the z2 side in the thickness direction z with respect to the first power supply terminal 41, and the second output terminal 82 is located on the z1 side in the thickness direction z with respect to the second power supply terminal 42. In this way, the first output terminal 81 and the second output terminal 82 may be fixed to the first power supply terminal 41 and the second power supply terminal 42 from the same side in a specific direction such as the thickness direction z, or may be fixed to them from different sides.

[0066] Second Embodiment 15 to 22, a power unit C20 and a power module A20 according to the second embodiment of the present disclosure will be described. The power module A20 is connected to, for example, the above-mentioned capacitor module B10 to form the power unit C20. Furthermore, a capacitor module having a configuration different from that of the capacitor module B10 may be used in accordance with the configuration of the power module A20.

[0067] The power module A20 includes a support 1, a plurality of first semiconductor elements 2A, a plurality of second semiconductor elements 2B, a sealing body 3, a plurality of main current terminals 4, and a plurality of control terminals 5. For ease of understanding, Fig. 17 shows a transparent view of a sealing resin 32 and a cover 33, which will be described later.

[0068] FIG. 15 is a perspective view showing the power module A20. FIG. 16 is a plan view showing the power module A20. FIG. 17 is a partial plan view showing the power module A20. FIG. 18 is a bottom view showing the power module A20. FIG. 19 is a left side view showing the power unit C20 and the power module A20. FIG. 20 is a cross-sectional view taken along line XX-XX in FIG. 17. FIG. 21 is a cross-sectional view taken along line XXI-XXI in FIG. 17. FIG. 22 is a cross-sectional view taken along line VI-VI in FIG. 17.

[0069] The power module A20 is used, for example, in inverter devices for various electrical products. As shown in Figures 15 and 16, the power module A20 has a rectangular shape when viewed in the thickness direction z of the support body 1. The power module A20 has a shape with its longitudinal direction aligned in the second direction x.

[0070] [Support 1] Support 1 supports a plurality of first semiconductor elements 2A and a plurality of second semiconductor elements 2B. Support 1 includes a first metal layer 11, a second metal layer 12, and an intermediate layer 13. The specific configuration of support 1 is not limited in any way.

[0071] First metal layer 11 is a layer containing a metal such as Cu (copper) as a main component. First metal layer 11 is exposed from sealing body 3 on the z1 side in the z direction, as shown in FIGS.

[0072] The first metal layer 11 also has a plurality of support holes 115. The plurality of support holes 115 are arranged at the four corners of the first metal layer 11, and each penetrates the first metal layer 11 in the z direction.

[0073] The intermediate layer 13 is disposed on the z1 side in the z direction with respect to the first metal layer 11. The intermediate layer 13 is made of an insulating material, and has a ceramic main component such as AlN (aluminum nitride) or Al2O3 (alumina). In this embodiment, the intermediate layer 13 includes a first region 13A, a second region 13B, and a third region 13C. The first region 13A is disposed closest to the x1 side in the x direction. The second region 13B is disposed closest to the x2 side in the x direction. The third region 13C is disposed between the first region 13A and the second region 13B in the x direction.

[0074] In this embodiment, as shown in FIGS. 20 and 22, the intermediate layer 13 is joined to the first metal layer 11 via a third metal layer 141 and a bonding layer 142. The third metal layer 141 is made of a metal material such as copper foil. The bonding layer 142 is a bonding material interposed between the first metal layer 11 and the third metal layer 141. In the power module A20, the constituent material of the bonding layer 142 is a lead-free solder containing tin as a main component.

[0075] As shown in FIGS. 20 and 22, the second metal layer 12 is disposed on the z1 side of the intermediate layer 13 in the z direction. The second metal layer 12 is in direct contact with the intermediate layer 13. The second metal layer 12 is mainly composed of a metal such as Cu (copper). The second metal layer 12 of this embodiment includes a first region 121A, a first region 122A, a first region 123A, a second region 121B, a second region 122B, a second region 123B, a third region 121C, a third region 122C, and a third region 123C. Furthermore, the second metal layer 12 of the illustrated example includes a plurality of other small regions.

[0076] The first region 121A is disposed on the x1 side in the second direction x with respect to the first region 123A. The first region 122A is disposed on the x2 side in the second direction x with respect to the first region 123A. The second region 123B is disposed on the y2 side in the y direction with respect to the first region 123A. The second region 121B is disposed on the x1 side in the second direction x with respect to the second region 123B. The second region 122B is disposed on the x2 side in the second direction x with respect to the second region 123B. The third region 123C is disposed on the y2 side in the y direction with respect to the second region 123B. The third region 121C is disposed on the x1 side in the second direction x with respect to the third region 123C. The third region 122C is disposed on the x2 side in the second direction x with respect to the third region 123C.

[0077] First region 121A, first region 122A, and first region 123A are interconnected by a plurality of wires. Second region 121B, second region 122B, and second region 123B are interconnected by a plurality of wires. Third region 121C, third region 122C, and third region 123C are interconnected by a plurality of wires.

[0078] In this embodiment, the second metal layer 12, the intermediate layer 13, and the third metal layer 141 constitute a so-called DBC (Direct Bonding Copper) substrate. The DBC substrate and the first metal layer 11 are bonded via a bonding layer 142. Such a configuration of the support 1 is an example of the support of the present disclosure, and is not limited to this.

[0079] [Multiple first semiconductor elements 2A, multiple second semiconductor elements 2B] A plurality of first semiconductor elements 2A and a plurality of second semiconductor elements 2B are supported by a support 1. As shown in Fig. 17, the plurality of first semiconductor elements 2A are mounted in first regions 121A, 122A, and 123A of the second metal layer 12. The plurality of second semiconductor elements 2B are mounted in second regions 121B, 122B, and 123B of the second metal layer 12.

[0080] The first semiconductor element 2A and the second semiconductor element 2B are MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) made of semiconductor materials mainly containing, for example, SiC (Silicon Carbide) and Si (Silicon). The first semiconductor element 2A and the second semiconductor element 2B are not limited to MOSFETs, but may also be IGBTs (Insulated Gate Bipolar Transistors). The description of the power module A20 focuses on n-channel MOSFETs made of semiconductor materials mainly containing SiC (Silicon Carbide). In this embodiment, a protection element such as a diode is connected to each of the first semiconductor element 2A and the second semiconductor element 2B.

[0081] The drain electrodes of the multiple first semiconductor elements 2A are conductively joined to the first region 121A, the first region 122A, and the first region 123A of the second metal layer 12. The drain electrodes of the multiple second semiconductor elements 2B are conductively joined to the second region 121B, the second region 122B, and the second region 123B of the second metal layer 12. The source electrodes of the multiple first semiconductor elements 2A are conductively connected to the first region 122A, the second region 122B, and the second region 123B by multiple wires. The source electrodes of the multiple second semiconductor elements 2B are conductively connected to the third region 121C, the third region 122C, and the third region 123C by multiple wires.

[0082] [Sealing body 3] The sealing body 3 seals and protects the first semiconductor elements 2A and the second semiconductor elements 2B. There are no particular limitations on the specific configuration of the sealing body 3. In this embodiment, the sealing body 3 includes a case 31, a sealing resin 32, and a cover 33.

[0083] 17, the case 31 is an electrical insulating member that surrounds the plurality of first semiconductor elements 2A, the plurality of second semiconductor elements 2B, and the second metal layer 12 when viewed in the thickness direction z. The case 31 is, for example, frame-shaped. The case 31 is mainly composed of a synthetic resin that has electrical insulation properties and excellent heat resistance, such as PPS (polyphenylene sulfide).

[0084] The case 31 also has a first support portion 311, a second support portion 312, and two third support portions 313. The first support portion 311, the second support portion 312, and the two third support portions 313 are portions that individually support a plurality of main current terminals 4 (a first power supply terminal 41, a second power supply terminal 42, and two output terminals 43) described below. The first support portion 311 and the second support portion 312 protrude toward the x1 side of the second direction x. The first support portion 311 is located on the y1 side of the first direction y, and the second support portion 312 is located on the y2 side of the first direction y. The two third support portions 313 protrude toward the x2 side of the second direction x. The two third support portions 313 are aligned in the first direction y.

[0085] 17 and 20, a nut 93 is housed in the first support portion 311. As shown in Fig. 17 and 21, a nut 94 is housed in the second support portion 312. Other nuts may also be housed in the two third support portions 313.

[0086] The case 31 of this embodiment has a plurality of mounting holes 39. The positions of the plurality of mounting holes 39 correspond to the plurality of support holes 115 provided in the first metal layer 11. The plurality of mounting holes 39 and the plurality of support holes 115 are used to mount the power module A20 to, for example, a heat sink (not shown).

[0087] As shown in Figures 20 to 22, the sealing resin 32 is contained in an area surrounded by the support body 1 and the case 31. The sealing resin 32 covers the plurality of first semiconductor elements 2A and the plurality of second semiconductor elements 2B. The sealing resin 32 is preferably a synthetic resin that has excellent heat resistance and adhesiveness, as well as electrical insulation. The sealing resin 32 is, for example, a silicone gel whose main component is thermosetting organopolysiloxane.

[0088] 16 and 20 to 22, the cover 33 closes the internal region of the power module A20 formed by the support body 1 and the case 31 from the z2 side in the z direction. The cover 33 is made of an electrically insulating synthetic resin.

[0089] [Multiple main current terminals 4] The main current terminals 4 are terminals through which the main current switched by the power module A20 is input and output. In this embodiment, as shown in Figures 15 to 17 and 20 to 22, the main current terminals 4 include a first power supply terminal 41, a second power supply terminal 42, and two output terminals 43.

[0090] The first power supply terminal 41 is disposed on the x1 side in the second direction x and is conductively connected to the first region 121A via multiple wires. As a result, the first power supply terminal 41 is conductively connected to the drain electrodes of multiple first semiconductor elements 2A. The first power supply terminal 41 is supported from the z1 side in the thickness direction z by a first support portion 311. In the illustrated example, the first power supply terminal 41 has a mounting hole 411. The mounting hole 411 penetrates the first power supply terminal 41 in the thickness direction z and is, for example, circular. The centers of the mounting hole 411 and the hole of the nut 93 are approximately aligned when viewed in the thickness direction z.

[0091] The second power supply terminal 42 is disposed on the x1 side in the second direction x and on the y2 side in the first direction y relative to the first power supply terminal 41. The second power supply terminal 42 is conductively connected to the third region 121C via multiple wires. This allows the second power supply terminal 42 to be conductively connected to the source electrodes of multiple second semiconductor elements 2B. The second power supply terminal 42 is supported from the z1 side in the thickness direction z by the second support portion 312. In the illustrated example, the second power supply terminal 42 has a mounting hole 421. The mounting hole 421 penetrates the second power supply terminal 42 in the thickness direction z and is, for example, circular. The mounting hole 421 and the hole of the nut 94 have substantially the same center when viewed in the thickness direction z.

[0092] 15, 19, 20, and 21, the first power supply terminal 41 and the second power supply terminal 42 are located at different positions in the thickness direction z. In the illustrated example, the thickness direction z corresponds to the specific direction of the present disclosure. The distance da between the top surface of the first power supply terminal 41 (the surface on the z2 side in the thickness direction z) and the top surface of the second power supply terminal 42 (the surface on the z2 side in the thickness direction z) is set in consideration of the connection with the capacitor module B10. In this embodiment, the distance da is set by appropriately adjusting the bending points of the first power supply terminal 41 and the second power supply terminal 42.

[0093] 19 , in the power unit C20, the first output terminal 81 and the second output terminal 82 of the capacitor module B10 are fixed to the first power supply terminal 41 and the second power supply terminal 42 from the z2 side in the thickness direction z. More specifically, the first power supply terminal 41 and the first output terminal 81 are fixed by a bolt 91. The bolt 91 is inserted through the mounting hole 411 of the first power supply terminal 41 and the mounting hole 811 of the first output terminal 81, and is threadedly engaged with a nut 93 built into the first support part 311. The second power supply terminal 42 and the second output terminal 82 are fixed by a bolt 92. The bolt 92 is inserted through the mounting hole 421 of the second power supply terminal 42 and the mounting hole 821 of the second output terminal 82, and is threadedly engaged with a nut 94 built into the second support part 312.

[0094] The two output terminals 43 are arranged on the x2 side in the second direction x. The two output terminals 43 are conductively connected to the second region 122B via multiple wires. As a result, the two output terminals 43 are conductively connected to the source electrodes of the multiple first semiconductor elements 2A and the drain electrodes of the multiple second semiconductor elements 2B. The two output terminals 43 are individually supported from the z1 side in the thickness direction z by two third supports 313.

[0095] [Multiple control terminals 5] The control terminals 5 are terminals through which control signals, detection signals, etc. for operating the power module A20 are input and output. As shown in Figs. 15 to 17, the control terminals 5 are arranged on both ends of the case 31 of the sealing body 3 in the first direction y, and protrude to the z2 side in the z direction.

[0096] The multiple control terminals 5 include a first gate terminal 51A and a second gate terminal 51B. The first gate terminal 51A is electrically connected to the gate electrodes of the multiple first semiconductor elements 2A. The second gate terminal 51B is electrically connected to the gate electrodes of the multiple second semiconductor elements 2B. The other control terminals 5 are used as appropriate, for example, a source sense terminal, a temperature monitoring terminal, a current monitoring terminal, a voltage monitoring terminal, etc.

[0097] This embodiment also allows for more appropriate connection between the first power supply terminal 41 and the first output terminal 81, and the second power supply terminal 42 and the second output terminal 82. As can be understood from this embodiment, the specific configuration of the power module of the present disclosure is not limited in any way.

[0098] The power unit according to the present disclosure is not limited to the above-described embodiment, and the specific configuration of the power unit according to the present disclosure can be freely modified in various ways.

[0099] [Appendix 1] a power module having a power conversion circuit, a first power terminal, and a second power terminal; a capacitor module having a capacitor element, a first output terminal connected to the first power supply terminal, and a second output terminal connected to the second power supply terminal; the first power supply terminal and the second power supply terminal are aligned in a first direction and are positioned at different positions in a specific direction intersecting the first direction; The power unit, wherein the first output terminal and the second output terminal are aligned in the first direction and are at different positions in the specific direction. [Appendix 2] the first power supply terminal and the first output terminal are fixed to each other, 2. The power unit according to claim 1, wherein the second power supply terminal and the second output terminal are fixed to each other. [Appendix 3] the first power terminal is located on a first side in the specific direction, 3. The power unit according to claim 1, wherein the second power supply terminal is located on a second side in the specific direction. [Appendix 4] The first output terminal is located on the second side in the specific direction with respect to the first power supply terminal. 4. The power unit according to claim 3, wherein the second output terminal is located on the second side in the specific direction relative to the second power supply terminal. [Appendix 5] The first output terminal is located on the first side in the specific direction with respect to the first power supply terminal. 4. The power unit according to claim 3, wherein the second output terminal is located on the second side in the specific direction relative to the second power supply terminal. [Appendix 6] 6. The power unit according to any one of claims 1 to 5, wherein the power module further includes a sealing body that houses the power conversion circuit. [Appendix 7] 7. The power unit according to claim 6, wherein the specific direction is a thickness direction of the sealing body. [Appendix 8] 7. The power unit according to claim 6, wherein the specific direction is a second direction intersecting the first direction and a thickness direction of the sealing body. [Appendix 9] the capacitor module further includes a first metal plate member and a second metal plate member; the first output terminal is integrally formed with the first metal plate member, the second output terminal is integrally formed with the second metal plate member, 9. The power unit according to claim 6, wherein the first metal plate member and the second metal plate member overlap the capacitor element when viewed in the thickness direction of the sealing body. [Appendix 10] 10. The power unit described in Appendix 9, wherein the distance in the thickness direction between the center of the first metal plate member and the center of the second metal plate member is the same as the distance in the thickness direction between the connection surface of the first output terminal and the connection surface of the second output terminal. [Appendix 11] the first output terminal and the first metal plate member are connected flatly, The power unit according to claim 10, wherein the second output terminal and the second metal plate member are connected flatly. [Appendix 12] 12. The power unit according to any one of appendixes 1 to 11, wherein the power conversion circuit of the power module is an inverter circuit. [Appendix 13] 13. The power unit according to claim 12, wherein the power module has a plurality of semiconductor elements that constitute the power conversion circuit. [Appendix 14] 14. The power unit according to claim 13, wherein the power conversion circuit includes a half-bridge circuit configured by the plurality of semiconductor elements. [Appendix 15] 15. The power unit of claim 14, wherein the semiconductor elements include SiC. [Appendix 16] 7. The power unit according to claim 6, wherein the first power terminal and the second power terminal protrude from the sealing body in a second direction intersecting the first direction and a thickness direction of the sealing body. [Appendix 17] 7. The power unit described in Appendix 6, wherein the sealing body has a first support portion that supports the first power supply terminal in a thickness direction of the sealing body, and a second support portion that supports the second power supply terminal in the thickness direction. [Explanation of symbols]

[0100] A10, A11, A12, A20: Power modules B10: Capacitor module C10, C13, C20: Power unit 1:Support 2A: First semiconductor element 2B: Second semiconductor element 3: Encapsulation body 4: Main current terminal 5: Control terminal 11: 1st metal layer 11A: 1st area 11B:Second area 12:Second metal layer 12A: 1st area 12B:Second area 13: Middle class 13A: 1st area 13B:Second area 13C: Third area 14: Insulating layer 14A: 1st area 14B:Second area 31: Case 32: Sealing resin 33: Cover 39: Mounting hole 41: 1st power supply terminal 42: 2nd power supply terminal 43: Output terminal 51A: First gate terminal 51B: Second gate terminal 61: First conductive member 62: Second conductive member 80: Capacitor element 81: First output terminal 82: Second output terminal 83: 1st metal plate 84:Second metal plate 85: Input terminal 86: Input terminal 87: Insulating layer 88: Sealing resin 91,92: Bolt 93,94: Nut 115: Support hole 121A: 1st area 121B:Second area 121C: Third area 122A: 1st area 122B:Second area 122C: Third area 123A: 1st area 123B:Second area 123C: Third area 141:Third metal layer 142: Bonding layer 301: 1st page 302: 2nd side 303: 3rd page 304:Side 4 305:Side 5 306:Side 6 311: 1st support part 312:Second support part 313: Third support part 411: Mounting hole 416: Spacer 421: Mounting hole 436: Spacer 626: Spacer 811: Mounting hole 821: Mounting hole Ct0: Half-bridge circuit Ct1: Upper arm circuit Ct2: Lower arm circuit da,db1,db2:Distance x :Second direction y: 1st direction z: thickness direction

Claims

1. a power module having a power conversion circuit, a first power supply terminal, and a second power supply terminal; a capacitor module having a capacitor element, a first output terminal connected to the first power supply terminal, and a second output terminal connected to the second power supply terminal; the first power supply terminal and the second power supply terminal are aligned in a first direction and are positioned at different positions in a specific direction intersecting the first direction, The power unit, wherein the first output terminal and the second output terminal are aligned in the first direction and are at different positions in the specific direction.

2. the first power supply terminal and the first output terminal are fixed to each other, The power unit according to claim 1 , wherein the second power supply terminal and the second output terminal are fixed to each other.

3. the first power supply terminal is located on a first side in the specific direction, The power unit according to claim 1 or 2, wherein the second power supply terminal is located on a second side in the specific direction.

4. The first output terminal is located on the second side in the specific direction with respect to the first power supply terminal. The power unit according to claim 3 , wherein the second output terminal is located on the second side in the specific direction relative to the second power supply terminal.

5. The first output terminal is located on the first side in the specific direction with respect to the first power supply terminal. The power unit according to claim 3 , wherein the second output terminal is located on the second side in the specific direction relative to the second power supply terminal.

6. The power unit according to claim 1 , wherein the power module further comprises a sealing body that houses the power conversion circuit.

7. The power unit according to claim 6 , wherein the specific direction is a thickness direction of the sealing body.

8. The power unit according to claim 6 , wherein the specific direction is a second direction intersecting the first direction and a thickness direction of the sealing body.

9. the capacitor module further includes a first metal plate member and a second metal plate member; the first output terminal is integrally formed with the first metal plate member, the second output terminal is integrally formed with the second metal plate member, The power unit according to claim 6 , wherein the first metal plate member and the second metal plate member overlap the capacitor element when viewed in a thickness direction of the sealing body.

10. 10. The power unit according to claim 9, wherein a distance in the thickness direction between a center of the first metal plate member and a center of the second metal plate member is the same as a distance in the thickness direction between a connection surface of the first output terminal and a connection surface of the second output terminal.

11. the first output terminal and the first metal plate member are connected flatly, The power unit according to claim 10 , wherein the second output terminal and the second metal plate member are connected flatly.

12. The power unit according to claim 1 , wherein the power conversion circuit of the power module is an inverter circuit.

13. The power unit according to claim 12, wherein the power module has a plurality of semiconductor elements that constitute the power conversion circuit.

14. The power unit according to claim 13, wherein the power conversion circuit includes a half-bridge circuit configured by the plurality of semiconductor elements.

15. The power unit of claim 14 , wherein the plurality of semiconductor elements include SiC.

16. The power unit according to claim 6 , wherein the first power supply terminal and the second power supply terminal protrude from the sealing body in a second direction intersecting the first direction and a thickness direction of the sealing body.

17. 7. The power unit according to claim 6, wherein the sealing body has a first support portion that supports the first power supply terminal in a thickness direction of the sealing body, and a second support portion that supports the second power supply terminal in the thickness direction.

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