Plasma apparatus

Abstract

There is a possibility that the workpiece is exposed to the electron beam.SOLUTION: The electron beam irradiation device 50 includes a processing container 20, a reaction container 40, an electron beam irradiation device 50, and a reflection wall RW. The processing vessel 20 partitions a first space S1 on which a workpiece W can be placed. The reactor 40 defines a second space S2 into which the gas can flow. The electron beam emitter 50 can emit an electron beam from an emission port 52 into the second space S2. The reaction vessel 40 has an opening 41 through which gas can flow out. The first space S1 communicates with the second space S2 through the opening 41. A reflecting wall RW capable of reflecting an electronic beam is positioned in a direction in which the electronic beam is irradiated to the irradiating port 52 of the electronic beam irradiating device 50 in the second space S2 of the reactor 40.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a plasma device. [Background technology]

[0002] The surface processing apparatus of Patent Document 1 includes a processing vessel, a stage, and an electron beam irradiation device. The processing vessel is box-shaped and the interior can be sealed. Gas flows into the processing vessel from the gas supply device via a gas supply pipe. The stage is located inside the processing vessel. An object to be processed is placed on the top surface of the stage. The electron beam irradiation device is capable of irradiating the interior of the processing vessel with an electron beam. The irradiation port of the electron beam irradiation device faces the stage. Inside the processing vessel, atmospheric pressure plasma is generated by irradiating the gas with an electron beam. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Patent No. 3698065 Summary of the Invention [Problem to be solved by the invention]

[0004] In a plasma device such as that disclosed in Patent Document 1, a workpiece is placed in a processing vessel. Furthermore, an electron beam irradiation device irradiates the inside of the processing vessel with electron beams. In such a case, the electron beams may be directly irradiated onto the workpiece, or the electron beams may be reflected by the wall surface of the processing vessel and irradiated onto the workpiece. In other words, in a plasma device such as that disclosed in Patent Document 1, the workpiece is likely to be exposed to the electron beams. [Means for solving the problem]

[0005] In order to solve the above problems, the present invention provides a plasma device comprising a processing vessel defining a first space in which a workpiece can be placed, a reaction vessel defining a second space into which gas discharged from a gas supply device can flow, and an electron beam irradiation device capable of irradiating an electron beam from an irradiation port into the second space, wherein the reaction vessel has an opening through which the gas in the second space can flow out, the first space is connected to the second space through the opening, and a reflective wall capable of reflecting the electron beam is located within the second space of the reaction vessel in the direction in which the electron beam is irradiated toward the irradiation port of the electron beam irradiation device. [Effects of the Invention]

[0006] The object to be treated is less likely to be exposed to the electron beam. [Brief explanation of the drawings]

[0007] [Figure 1] FIG. 1 is a schematic diagram of a plasma device. [Figure 2] FIG. 2 is a schematic plan view of the reaction vessel. [Figure 3] FIG. 3 is a schematic plan view of a reaction vessel according to a modified example. [Figure 4] FIG. 4 is a schematic plan view of a reaction vessel according to a modified example. DETAILED DESCRIPTION OF THE INVENTION

[0008] <One embodiment of the plasma device> An embodiment of a plasma device will be described below. The drawings are schematic diagrams for ease of understanding, and some components may be enlarged or omitted. Therefore, the dimensional ratios of the components may differ from the actual ones. In addition, the direction of gravity will be referred to as the "downward direction," and the direction opposite to the direction of gravity will be referred to as the "upward direction." The direction perpendicular to the upward and downward directions will be referred to as the "horizontal direction."

[0009] (Overall structure) 1, the plasma device 10 includes a processing chamber 20, a stage 30, a reaction chamber 40, and an electron beam irradiation device 50. The plasma device 10 also includes a gas supply pipe GP1, a supply-side valve V1, a first pressure gauge P1, a gas exhaust pipe GP2, an exhaust-side valve V2, and a second pressure gauge P2.

[0010] As shown in FIG. 1, the processing vessel 20 defines a first space S1 in which a workpiece W can be placed. The processing vessel 20 is not shown in FIG. 2. The processing vessel 20 is shaped like a substantially rectangular parallelepiped box. The processing vessel 20 can substantially seal the first space S1 from the space outside the processing vessel 20. Hereinafter, the inner surface of the processing vessel 20 that faces downward is referred to as the bottom surface. The inner surface of the processing vessel 20 that faces upward is referred to as the top surface. The four inner surfaces of the processing vessel 20 excluding the bottom and top surfaces, i.e., the surfaces facing horizontally, are referred to as side surfaces. The processing vessel 20 is schematically illustrated as a rectangle in FIG. 1. The workpiece W is an object to be surface-treated using plasma. The workpiece W is, for example, a film made of fluororesin.

[0011] The gas supply pipe GP1 is a pipe that penetrates the top surface of the processing vessel 20. One end of the gas supply pipe GP1 is connected to a gas supply device GS located outside the processing vessel 20. The other end of the gas supply pipe GP1 penetrates the outer wall of the processing vessel 20 and is located inside the reaction vessel 40. The gas supply device GS can supply, for example, nitrogen gas. The gas discharged from the gas supply device GS travels through the gas supply pipe GP1 to the inner end of the processing vessel 20.

[0012] The supply-side valve V1 is attached to the gas flow path in the gas supply pipe GP1. The supply-side valve V1 is capable of adjusting the flow path cross-sectional area of ​​the gas supply pipe GP1. By controlling the flow path cross-sectional area of ​​the gas supply pipe GP1, the flow rate of the gas flowing through the gas supply pipe GP1 is controlled. The first pressure gauge P1 is attached to the gas flow path in the gas supply pipe GP1, downstream of the supply-side valve V1. The first pressure gauge P1 is capable of acquiring the pressure of the gas flowing through the gas supply pipe GP1.

[0013] The gas exhaust pipe GP2 is a pipe connected to the processing vessel 20. That is, one end of the gas exhaust pipe GP2 is connected to the side surface of the processing vessel 20. The other end of the gas exhaust pipe GP2 is located outside the processing vessel 20. The second pressure gauge P2 is attached to the gas flow path in the gas exhaust pipe GP2. The second pressure gauge P2 can acquire the pressure of the gas flowing through the gas exhaust pipe GP2.

[0014] The exhaust-side valve V2 is attached downstream of the second pressure gauge P2 on the gas flow path in the gas exhaust pipe GP2. The exhaust-side valve V2 is capable of adjusting the flow path cross-sectional area of ​​the gas exhaust pipe GP2. By controlling the flow path cross-sectional area of ​​the gas exhaust pipe GP2, the flow rate of the gas flowing through the gas exhaust pipe GP2 is controlled. In other words, by controlling the flow path cross-sectional area of ​​the gas exhaust pipe GP2, the flow rate of the gas exhausted from the first space S1 is controlled. Therefore, gases and other vapors present inside the processing vessel 20 are exhausted to the outside of the processing vessel 20 through the gas exhaust pipe GP2 and the exhaust-side valve V2.

[0015] The stage 30 is housed inside the processing vessel 20. The stage 30 is installed on the bottom surface of the processing vessel 20. The stage 30 is shaped like a rectangular plate. The workpiece W can be placed and fixed on the upper surface of the stage 30. The stage 30 is equipped with a drive mechanism (not shown). Specifically, the stage 30 has a servo motor, a ball screw, gears, etc. (not shown). This mechanism allows the stage 30 to move horizontally, upwardly, and downwardly relative to the bottom surface of the processing vessel 20.

[0016] As shown in FIG. 1, the reaction vessel 40 is housed inside the processing vessel 20. The reaction vessel 40 is located above the stage 30. The reaction vessel 40 has a generally cylindrical outer shape. The reaction vessel 40 defines a second space S2 as an internal space. A gas supply pipe GP1 is connected to the outer surface of the upper side of the reaction vessel 40. Therefore, gas supplied from the gas supply device GS can flow into the second space S2 defined by the reaction vessel 40. The reaction vessel 40 is electrically connected to ground. In other words, the reaction vessel 40 is substantially not charged.

[0017] In this embodiment, the diameter of the reaction vessel 40 is smaller than the reachable distance of the electron beam irradiated from the irradiation port 52 of the electron beam irradiation device 50 (described later). In other words, the diameter of the reaction vessel 40 is determined so that the electron beam irradiated from the irradiation port 52 of the electron beam irradiation device 50 will collide with the inner wall of the reaction vessel 40 when traveling along the trajectory at the time of irradiation. Therefore, the diameter of the reaction vessel 40 is determined by the type of gas supplied by the gas supply device GS, the acceleration voltage of the electron beam, and other factors. In this embodiment, the gas type is nitrogen, and the acceleration voltage is 60 kV. Therefore, the diameter of the reaction vessel 40 is approximately 100 mm. Furthermore, the reaction vessel 40 is made of a material capable of reflecting the electron beam. For example, the reaction vessel 40 is made of tungsten or various alloys.

[0018] The reaction vessel 40 has an opening 41. The opening 41 is located in a downward portion of the reaction vessel 40, i.e., on the stage 30 side. In other words, the stage 30 is located inside the first space S1 and outside the second space S2. The opening 41 is a through-hole that communicates between the second space S2 defined by the reaction vessel 40 and the first space S1 defined by the processing vessel 20. In other words, the first space S1 communicates with the second space S2 through the opening 41. In this embodiment, the distance between the edge of the opening 41 and the stage 30 can be reduced to 10 mm or less by moving the stage 30 upward.

[0019] The electron beam irradiation device 50 is attached to the upper portion of the reaction vessel 40. The electron beam irradiation device 50 has an irradiation device main body 51 and an irradiation port 52. The irradiation device main body 51 has a rectangular box shape. Inside the irradiation device main body 51, various control mechanisms for generating electron beams and multiple filaments that emit electron beams are stored. The multiple filaments are arranged in a straight line.

[0020] The irradiation port 52 is located on a surface of the irradiation device main body 51 facing the inside of the reaction vessel 40. The irradiation port 52 is made of a material through which an electron beam can pass, such as metal foil or glass. The electron beam generated by the irradiation device main body 51 is emitted from the irradiation port 52. In this embodiment, the irradiation port 52 has a rectangular shape that is long in the longitudinal direction of the irradiation device main body 51. Since multiple filaments are linearly arranged inside the irradiation device main body 51, the electron beam is irradiated so that its trajectory is strip-shaped along the long side of the irradiation port 52. Therefore, due to the above positional relationship, the electron beam irradiation device 50 can irradiate the electron beam from the irradiation port 52 into the second space S2 of the reaction vessel 40. Details of the electron beam irradiation device 50 will be described later.

[0021] The plasma device 10 includes a potential adjustment circuit 71 , a power supply 72 , and a control device 60 . The power supply 72 is connected to the stage 30. The power supply 72 applies a voltage to the surface of the outer surface of the stage 30 that faces the opening 41. In other words, the power supply 72 applies a positive or negative voltage to that surface of the stage 30.

[0022] The potential adjustment circuit 71 is electrically connected between the power supply 72 and the stage 30. In this embodiment, the potential adjustment circuit 71 is a voltage regulator. The potential adjustment circuit 71 can convert the output voltage of the power supply 72 and output it to the stage 30. The potential adjustment circuit 71 increases or decreases the voltage supplied by the power supply 72 and applies it to the stage 30.

[0023] The control device 60 has a potential control unit 61 and a flow rate control unit 62 as functional blocks such as circuits and programs. The potential control unit 61 can control the potential adjustment circuit 71. The potential control unit 61 can control the potential of the surface of the outer surface of the stage 30 facing the opening 41 through control of the potential adjustment circuit 71.

[0024] The flow rate control unit 62 can control one or more selected from the flow rate of gas discharged from the first space S1 and the flow rate of gas flowing into the second space S2. In this embodiment, the flow rate control unit 62 can control the flow rate of gas discharged from the first space S1 by controlling the supply-side valve V1 of the gas supply pipe GP1. Specifically, the flow rate control unit 62 can increase the amount of gas flowing through the gas supply pipe GP1 by controlling the supply-side valve V1 to open. The flow rate control unit 62 can decrease the amount of gas flowing through the gas supply pipe GP1 by controlling the supply-side valve V1 to close. The flow rate control unit 62 can control the opening and closing of the supply-side valve V1 so that the pressure value acquired from the first pressure gauge P1 becomes a predetermined value.

[0025] The flow rate control unit 62 can also control the flow rate of gas flowing into the second space S2 by controlling the exhaust-side valve V2 of the gas exhaust pipe GP2. Specifically, the flow rate control unit 62 can increase the amount of gas flowing through the gas exhaust pipe GP2 by controlling the exhaust-side valve V2 to open. The flow rate control unit 62 can also reduce the amount of gas flowing through the gas exhaust pipe GP2 by controlling the exhaust-side valve V2 to close. The flow rate control unit 62 can control the opening and closing of the exhaust-side valve V2 so that the pressure value acquired from the second pressure gauge P2 becomes a predetermined value.

[0026] In this embodiment, the flow rate control unit 62 controls the above flow rates so that the air pressure in the first space S1 is maintained at atmospheric pressure. Note that "atmospheric pressure" here refers to the air pressure in the environment surrounding the plasma device 10. The term "atmospheric pressure" here is used to distinguish it from pressures of several Pa to several hundred Pa created by devices such as vacuum pumps.

[0027] Furthermore, the flow rate control unit 62 can adjust the flow rate of the gas flowing out from the opening 41 of the reaction vessel 40 by controlling the flow rate of the gas discharged from the first space S1 and the flow rate of the gas flowing into the second space S2. In this embodiment, the flow rate control unit 62 can control the flow rate within a range of 0.1 m / s to 50 m / s.

[0028] (Relationship between electron beam irradiation device and reaction vessel) 2, the irradiation port 52 of the electron beam irradiation device 50 faces the reflecting wall RW inside the reaction vessel 40. Specifically, within the first space S1 of the reaction vessel 40, the reflecting wall RW capable of reflecting the electron beam is located in the direction in which the electron beam is irradiated to the irradiation port 52 of the electron beam irradiation device 50. As described above, the material of the reaction vessel 40 is capable of reflecting the electron beam. Therefore, in this embodiment, the entire inner wall of the reaction vessel 40 is the reflecting wall RW.

[0029] More specifically, the "direction in which the electron beam is irradiated" refers to the theoretical direction in which the electron beam is emitted from each filament of the electron beam irradiation device 50. In this embodiment, the "direction in which the electron beam is irradiated" refers to a direction perpendicular to the irradiation port 52, that is, the direction in which the irradiation port 52 faces. As shown by the dashed-dotted line in FIG. 1 , when the outer edge of the irradiation port 52 is orthogonally projected in the direction in which the electron beam is irradiated, a reflecting wall RW exists within the projected projection area PA. In this embodiment, the reflecting wall RW is located throughout the entire projection area PA.

[0030] As shown in FIG. 2, the irradiation port 52 is set at an angle such that the electron beam emitted from the irradiation port 52 is unlikely to return to the irradiation port 52 after first being reflected by the reflecting wall RW. Specifically, a first virtual line segment SL1 is drawn from the outer edge of the irradiation port 52 in the direction in which the electron beam is emitted. Then, assuming that the first virtual line segment SL1 is the trajectory of the electron beam, a second virtual line segment SL2 is drawn to indicate the trajectory of the electron beam when reflected by the reflecting wall RW. That is, the second virtual line segment SL2 is drawn starting from the intersection of the first virtual line segment SL1 and the reflecting wall RW so that the incident angle and reflection angle of the electron beam with respect to the reflecting wall RW are equal. At this time, the reflecting wall RW is located on the second virtual line segment SL2. In other words, neither the irradiation port 52 nor the opening 41 is located on the second virtual line segment SL2. Note that in FIGS. 2 to 4, the first virtual line segment SL1 and the second virtual line segment SL2 are indicated by dashed dotted lines.

[0031] (Operation of this embodiment) In the above embodiment, gas supplied from the gas supply device GS flows into the second space S2 in the reaction vessel 40 through the gas supply pipe GP1. When the electron beam irradiation device 50 irradiates the second space S2 with electron beams, some of the electron beams collide with molecules constituting the gas, generating plasma. Specifically, the molecules in the gas that collide with the electron beams are ionized, generating active species such as ions and radicals in the second space S2. Next, the electron beams irradiated from the electron beam irradiation device 50 that do not collide with the molecules in the gas are reflected by the reflecting wall RW. The electron beams reflected by the reflecting wall RW diffuse within the second space S2. This efficiently generates plasma in the second space S2. Note that because this plasma is atmospheric pressure plasma, the first space S1 and the second space S2 are maintained at approximately atmospheric pressure. Furthermore, because gas is intermittently supplied from the gas supply device GS, the air pressure in the second space S2 becomes higher than the air pressure in the first space S1. Therefore, the gas containing the active species is forced out through the opening 41. Then, the workpiece W placed on the stage 30 is exposed to the activated species flowing out from the opening 41. That is, the surface of the workpiece W placed on the stage 30 is treated by the plasma.

[0032] (Effects of this embodiment) (1) In the above embodiment, the plasma device 10 generates plasma in the second space S2 of the reaction vessel 40. This plasma flows into the first space S1 of the processing vessel 20 through the opening 41. That is, the space where the plasma is generated is separated from the space where the workpiece W is exposed to the plasma. When the plasma is generated in the second space S2, the electron beam is reflected by the reflecting wall RW. As a result, the electron beam emitted from the irradiation port 52 of the electron beam irradiation device 50 is less likely to be emitted from the opening 41 into the first space S1. Therefore, the workpiece W is less likely to be exposed to the electron beam than when plasma is generated in the same space as the workpiece W.

[0033] (2) In the above embodiment, the flow rate control unit 62 can control the flow rate of the gas discharged from the first space S1 and the flow rate of the gas flowing into the second space S2. This makes it possible to adjust the amount of active species, such as ions and radicals, that are exposed to the workpiece W per unit time depending on the type of the active species generated in the second space S2.

[0034] (3) In the above embodiment, the potential control unit 61 can control the potential of the surface of the outer surface of the stage 30 facing the opening 41 through control of the potential adjustment circuit 71. This makes it easier to expose specific ions of the plasma flowing out from the opening 41 to the workpiece W.

[0035] For example, when carbon dioxide is irradiated with an electron beam, ionized CO2 + , CO, O2 * At this time, by applying a negative potential to the stage 30, CO2 + The reaction of the electron beam with the object to be treated W can be accelerated. + , O - At this time, by applying a positive potential to the stage 30, O - The reaction of the ion beam with the object to be treated W can be promoted.

[0036] (4) In the above embodiment, the diameter of the reaction vessel 40 is smaller than the distance that the electron beam irradiated from the electron beam irradiation device 50 can reach from the irradiation port 52. Therefore, the electron beam is diffused by repeatedly reflecting off the inner wall of the reaction vessel 40. This allows plasma to be generated more efficiently than when the reaction vessel 40 is not provided.

[0037] (5) In the above embodiment, the reaction vessel 40 is cylindrical. That is, the inner wall of the reaction vessel 40 is curved. This makes it easier for the electron beam to be reflected in unspecified directions compared to when the reflective wall RW of the reaction vessel 40 is flat.

[0038] (6) In the above embodiment, the irradiation port 52 is set at an angle such that the electron beam emitted from the irradiation port 52 is unlikely to return to the irradiation port 52 after first being reflected by the reflecting wall RW. The closer the angle between the reflecting wall RW and the first virtual line segment SL1 is to 90 degrees, the more likely the electron beam is to travel toward the irradiation port 52 after being reflected by the reflecting wall RW. In such a case, there is a risk of the electron beams interfering with each other. With this configuration, the electron beams are unlikely to return toward the irradiation port 52, thereby suppressing interference between the electron beams. Furthermore, as a result of the electron beams being reflected by the reflecting wall RW, the electron beams are likely to spread throughout the entire second space S2. In other words, plasma can be efficiently generated in the second space S2.

[0039] <Example of change> The above embodiment can be modified as follows: The above embodiment and the following modifications can be combined with each other within the scope of technical compatibility.

[0040] The shapes of the processing vessel 20 and the reaction vessel 40 are not limited to those of the above embodiment. The processing vessel 20 only needs to have at least a first space S1 in which the workpiece W can be placed and to be in communication with a second space S2. The term "vessel" used here is a convenient expression and does not refer to the size of the processing vessel 20. For example, the processing vessel 20 may be as large as a room in a factory or facility.

[0041] The shape and material of the workpiece W are not limited to those of the above embodiment. That is, the workpiece W does not have to be sheet-shaped and may be, for example, a three-dimensional object. The material of the workpiece W may be metal, synthetic resin, ceramic, glass, etc.

[0042] The gas supply pipe GP1 does not have to have the supply-side valve V1 and the first pressure gauge P1. Similarly, the gas exhaust pipe GP2 does not have to have the exhaust-side valve V2 and the second pressure gauge P2. Even in this case, for example, the gas supply device GS itself may be able to control the gas flow rate.

[0043] The type of gas is not limited to the examples in the above embodiment. For example, the gas may be argon, helium, oxygen, hydrogen, carbon dioxide, ammonia, air, water vapor, fluoride, chlorine-based gas, bromine-based gas, or a mixture thereof. In addition, the gas may be CF4, which can form a polymer film. 10 , C8F 18 and decane.

[0044] The configuration of the stage 30 is not limited to the example of the above embodiment. For example, the stage 30 may not have a drive mechanism. In this case, the position of the workpiece W with respect to the opening 41 may be moved relative to the opening 41, for example, by winding up a film-like workpiece W. Also, for example, instead of the stage 30 itself moving, the reaction vessel 40 may be movable relative to the stage 30. Furthermore, the plasma device 10 may not have a stage 30. In this case, the workpiece W may be placed directly on the bottom surface of the processing vessel 20, for example.

[0045] The shape of the reaction vessel 40 is not limited to a cylindrical shape. For example, a portion of the inner wall of the reaction vessel 40 may be flat. In this case, as shown in FIG. 3, the portion of the inner wall of the reaction vessel 40 serving as the reflecting wall RW on a first imaginary line segment SL1 extending in the direction in which the electron beam is irradiated from the irradiation port 52 of the electron beam irradiation device 50 may be flat. In this modification, too, it is preferable that the angle formed between the first imaginary line segment SL1 and the linear reflecting wall RW is not a right angle.

[0046] The size, material, and other configurations of the reaction vessel 40 are not limited to those of the above embodiment. The size of the reaction vessel 40 may be changed as appropriate depending on the type of gas and the acceleration voltage of the electron beam irradiation device 50. The reaction vessel 40 may be made of any material that is impermeable to electron beams, such as metals such as stainless steel and molybdenum, or ceramics. In particular, metals are preferred for the reaction vessel 40, as they tend to reflect electron beams and allow electrons to diffuse easily within the reaction vessel 40.

[0047] The reaction vessel 40 does not have to be housed inside the processing vessel 20. For example, the plasma device 10 may have a rectangular parallelepiped shape as a whole, and the first space S1 and the second space S2 may be separated by an internal partition plate.

[0048] The shape of the opening 41 is not limited to the example in the above embodiment. For example, the reaction vessel 40 may have a cylindrical gas outlet passage on the downward side. In this case, the opening 41 is located at the tip of the gas outlet passage.

[0049] The specific configuration of the electron beam irradiation device 50 is not limited to the example of the above embodiment. For example, the electron beam does not have to be irradiated in a band shape, but may be irradiated in a linear or circular shape. The plasma device 10 may also include two or more electron beam irradiation devices 50. In this case, it is sufficient that at least one electron beam irradiation device 50 has a reflection wall RW capable of reflecting the electron beam positioned in the direction in which the electron beam is irradiated toward the irradiation port 52 of the electron beam irradiation device 50.

[0050] When the outer edge of the irradiation port 52 is orthogonally projected in the direction of electron beam irradiation, the reflecting wall RW needs to be present in at least a part of the interior of the projected projection area PA. In other words, the opening 41 may be located in a part of the projection area PA. However, it is preferable that the reflecting wall RW be present in 80% or more of the projection area PA. It is more preferable that the reflecting wall RW be present in 95% or more of the projection area PA.

[0051] In the above embodiment, the control device 60 itself may have the function of the potential adjustment circuit 71. Furthermore, the plasma device 10 does not have to be equipped with the potential adjustment circuit 71 and the power supply 72. In other words, the control device 60 does not have to be able to control the potential of the surface of the outer surface of the stage facing the opening 41.

[0052] The control device 60 may not include one or more of the potential control unit 61 and the flow rate control unit 62 as functional blocks. In other words, the potential control unit 61 may not be able to control the potential of the surface of the stage 30 facing the opening 41. The flow rate control unit 62 may not be able to control one or more selected from the flow rate of the gas exhausted from the first space S1 and the flow rate of the gas flowing into the second space S2. Furthermore, the potential control unit 61 and the flow rate control unit 62 may be implemented on two different IC chips, etc.

[0053] The control device 60 may include a control unit other than the potential control unit 61 and the flow rate control unit 62 as a functional block. For example, the control device 60 may be capable of driving the stage 30.

[0054] 1, the control device 60 is shown as being located outside the processing chamber 20, but the location of the control device 60 is not limited to this. The plasma device 10 does not necessarily have to include the control device 60.

[0055] The flow rate of the gas flowing out from the opening 41 controlled by the flow rate control unit 62 is not limited to the example in the above embodiment. In the above embodiment, the reflecting wall RW does not have to be located on the second imaginary line segment SL2. That is, either the irradiation port 52 or the opening 41 may be located on the second imaginary line segment SL2.

[0056] 4, the reflecting wall RW may be a reflecting plate RB located in the second space S2 and capable of reflecting the electron beam. The material of the reflecting plate RB may be selected from the materials exemplified for the reaction vessel 40. The material of the reflecting plate RB may be the same as or different from the material of the reaction vessel 40. The surface of the reflecting plate RB facing the irradiation port 52 may be flat or curved.

[0057] By providing the plasma device 10 with the reflector RB in this way, the reflection direction of the electron beam can be changed regardless of the size and shape of the inner wall of the reaction vessel 40. In other words, the reaction vessel 40 itself does not need to be shaped to reflect the electron beam irradiated from the irradiation port 52. Furthermore, even when the irradiation port 52 faces the opening 41, by providing the reflector RB in the direction in which the electron beam is irradiated relative to the irradiation port 52, the effect of preventing the workpiece W from being exposed to the electron beam can be obtained.

[0058] <Additional Notes> The technical ideas that can be understood from the above-described embodiment and modified examples will be described. [1] A plasma device comprising: a processing vessel defining a first space in which a workpiece can be placed; a reaction vessel defining a second space into which gas discharged from a gas supply device can flow; and an electron beam irradiation device capable of irradiating an electron beam from an irradiation port into the second space, wherein the reaction vessel has an opening through which the gas in the second space can flow out, the first space is connected to the second space through the opening, and a reflective wall capable of reflecting the electron beam is located within the second space of the reaction vessel in the direction in which the electron beam is irradiated toward the irradiation port of the electron beam irradiation device.

[0059] [2] The plasma device according to [1], wherein the reflecting wall is an inner wall of the reaction vessel. [3] The plasma device according to [1] or [2], wherein the reflecting wall is a reflecting plate located in the second space and capable of reflecting the electron beam.

[0060] [4] The plasma device according to any one of [1] to [3], further comprising a flow rate control unit capable of controlling one or more of the flow rate of the gas discharged from the first space and the flow rate of the gas flowing into the second space.

[0061] [5] A plasma device according to any one of [1] to [4], comprising a stage located inside the first space and outside the second space, a power source capable of applying a voltage to the stage, and a potential control unit capable of controlling the potential of the surface of the outer surface of the stage facing the opening.

[0062] [6] The plasma device described in [5] further comprises a potential adjustment circuit connected between the power supply and the stage, capable of converting the output voltage of the power supply and outputting it to the stage, wherein the potential control unit is capable of controlling the potential of the surface of the outer surface of the stage facing the opening through control of the potential adjustment circuit. [Explanation of symbols]

[0063] GP: Gas supply device 10...Plasma device GP1...Gas supply pipe GP2...Gas exhaust pipe V1: Supply valve V2: Exhaust valve P1...First pressure gauge P2: Second pressure gauge 20...Processing container S1…first space 30...Stage 40...Reaction vessel S2…Second space 41...Aperture RW…Reflection wall 50...Electron beam irradiation device 51... Irradiation device body 52...Irradiation port 60...Control device 71…Potential adjustment circuit 72…Power supply SL1: First imaginary line segment SL2: Second imaginary line segment W: Processing object RB…reflector

Claims

1. a processing container defining a first space in which an object to be processed can be placed; a reaction vessel defining a second space into which the gas discharged from the gas supply device can flow; an electron beam irradiation device capable of irradiating an electron beam from an irradiation port into the second space; Equipped with the reaction vessel has an opening through which the gas in the second space can flow out, the first space communicates with the second space through the opening, A reflection wall capable of reflecting the electron beam is positioned in the second space of the reaction vessel in a direction in which the electron beam is irradiated to the irradiation port of the electron beam irradiation device. Plasma device.

2. The reflecting wall is the inner wall of the reaction vessel. The plasma device according to claim 1 .

3. The reflecting wall is a reflecting plate that is located in the second space and is capable of reflecting the electron beam. The plasma device according to claim 1 .

4. a flow rate control unit that can control one or more of the flow rate of the gas discharged from the first space and the flow rate of the gas flowing into the second space. The plasma device according to claim 1 .

5. a stage located inside the first space and outside the second space; a power source capable of applying a voltage to the stage; a potential control unit capable of controlling the potential of a surface of the outer surface of the stage facing the opening; Equipped with The plasma device according to claim 1 .

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