Substrate processing apparatus and abnormality detection method

Abstract

To detect abnormality related to liquid leakage with high accuracy.SOLUTION: The substrate processing apparatus includes a chamber, a nozzle, a measurement unit, a flow path opening / closing unit, and a controller. The chamber is capable of accommodating a substrate. The nozzle is provided in the chamber and configured to supply a processing liquid toward the substrate. The measurement part projects light to the substrate and measures the intensity of reflected light from the substrate. The flow path opening / closing unit opens and closes a supply flow path of the processing liquid to the nozzle. The control unit outputs, to the flow path opening / closing unit, an opening signal for performing an opening operation of opening the supply flow path and a closing signal for performing a closing operation of closing the supply flow path. The controller is configured to detect an abnormality related to a liquid leakage of the processing liquid from the nozzle based on the intensity of the reflection light measured by the measuring unit after the output of the closing signal.SELECTED DRAWING: Figure 8

Description

[Technical Field]

[0001] The present disclosure relates to a substrate processing apparatus and an abnormality detection method. [Background technology]

[0002] 2. Description of the Related Art One of the steps in a semiconductor manufacturing process is a liquid processing step in which a substrate such as a semiconductor wafer or a glass substrate is processed by supplying a processing liquid to the substrate.

[0003] The liquid processing step is performed by discharging the processing liquid supplied from the processing liquid supply source from a nozzle disposed above the substrate, the nozzle being connected to the processing liquid supply source via a supply path. A valve is provided in the supply path, and the discharge state of the processing liquid from the nozzle is switched by opening and closing the valve.

[0004] Furthermore, a technique is known in which abnormalities related to leakage of processing liquid from nozzles are monitored based on images captured by an infrared camera (see Patent Document 1). [Prior art documents] [Patent documents]

[0005] [Patent Document 1] International Publication No. 2019 / 146456 Summary of the Invention [Problem to be solved by the invention]

[0006] The present disclosure provides a technique that can detect abnormalities related to liquid leakage with high accuracy. [Means for solving the problem]

[0007] A substrate processing apparatus according to one aspect of the present disclosure includes a chamber, a nozzle, a measurement unit, a flow path opening / closing unit, and a control unit. The chamber is capable of accommodating a substrate. The nozzle is provided within the chamber and supplies a processing liquid toward the substrate. The measurement unit projects light onto the substrate and measures the intensity of the light reflected from the substrate. The flow path opening / closing unit opens and closes a supply flow path for the processing liquid to the nozzle. The control unit outputs an open signal to the flow path opening / closing unit to open the supply flow path and a close signal to the flow path opening / closing unit to close the supply flow path. The control unit detects an abnormality related to leakage of the processing liquid from the nozzle based on the intensity of the reflected light measured by the measurement unit after the close signal is output. [Effects of the Invention]

[0008] According to the present disclosure, abnormalities related to liquid leakage can be detected with high accuracy. [Brief explanation of the drawings]

[0009] [Figure 1] FIG. 1 is a diagram showing the configuration of a substrate processing system according to the first embodiment. [Figure 2] FIG. 2 is a diagram showing the configuration of a processing unit according to the first embodiment. [Figure 3] FIG. 3 is a diagram illustrating an example of the configuration of a processing fluid supply unit according to the first embodiment. [Figure 4] FIG. 4 is a block diagram showing an example of the configuration of the control device according to the first embodiment. [Figure 5] FIG. 5 is a diagram for explaining the execution timing of the monitoring process according to the first embodiment. [Figure 6] FIG. 6 is a diagram showing an example of the measurement results of the measurement unit when no leakage of the processing liquid from the nozzle occurs. [Figure 7] FIG. 7 is a diagram showing an example of the measurement results of the measurement unit when leakage of the processing liquid from the nozzle occurs. [Figure 8] FIG. 8 is a flowchart showing the procedure of the monitoring process according to the first embodiment. [Figure 9]FIG. 9 is a diagram for explaining the timing of acquiring the reference intensity and the timing of executing the monitoring process according to the second embodiment. [Figure 10] FIG. 10 is a diagram illustrating an example of the configuration of a processing fluid supply unit according to the third embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0010] Hereinafter, modes for carrying out a substrate processing apparatus and an anomaly detection method according to the present disclosure (hereinafter referred to as "embodiments") will be described in detail with reference to the drawings. Note that the present disclosure is not limited to the embodiments described below. Furthermore, each embodiment can be appropriately combined within the scope of not causing any contradiction in the processing content. Furthermore, the same components in each of the following embodiments will be given the same reference numerals, and duplicated explanations will be omitted.

[0011] (First embodiment) 1 is a diagram showing the configuration of a substrate processing system according to a first embodiment. In the following, to clarify the positional relationships, mutually orthogonal X-axis, Y-axis, and Z-axis are defined, and the positive direction of the Z-axis is defined as the vertically upward direction.

[0012] 1, a substrate processing system 1 (an example of a substrate processing apparatus) includes a loading / unloading station 2 and a processing station 3. The loading / unloading station 2 and the processing station 3 are provided adjacent to each other.

[0013] The carry-in / out station 2 includes a carrier placement section 11 and a transport section 12. A plurality of carriers C are placed on the carrier placement section 11, each of which accommodates a plurality of substrates, in this embodiment, semiconductor wafers (hereinafter referred to as wafers W, an example of substrates), in a horizontal position.

[0014] The transfer section 12 is provided adjacent to the carrier placement section 11 and includes a substrate transfer device 13 and a transfer section 14. The substrate transfer device 13 includes a wafer holding mechanism that holds the wafer W. The substrate transfer device 13 is capable of moving horizontally and vertically and rotating about a vertical axis, and transfers the wafer W between the carrier C and the transfer section 14 using the wafer holding mechanism.

[0015] The processing station 3 is provided adjacent to the transport section 12. The processing station 3 includes a transport section 15 and a plurality of processing units 16. The plurality of processing units 16 are provided side by side on both sides of the transport section 15.

[0016] The transfer section 15 includes a substrate transfer device 17 therein. The substrate transfer device 17 includes a wafer holding mechanism that holds the wafer W. The substrate transfer device 17 is capable of moving in the horizontal and vertical directions and rotating about a vertical axis, and transfers the wafer W between the delivery section 14 and the processing unit 16 using the wafer holding mechanism.

[0017] The processing unit 16 performs predetermined substrate processing on the wafer W transferred by the substrate transfer device 17 .

[0018] The substrate processing system 1 also includes a control device 4. The control device 4 is, for example, a computer, and includes a control unit 18 and a storage unit 19. The storage unit 19 stores programs that control various processes executed in the substrate processing system 1. The control unit 18 controls the operation of the substrate processing system 1 by reading and executing the programs stored in the storage unit 19.

[0019] Such a program may be recorded on a computer-readable storage medium and installed from that storage medium into the storage unit 19 of the control device 4. Examples of computer-readable storage media include hard disks (HDs), flexible disks (FDs), compact disks (CDs), magnetic optical disks (MOs), and memory cards.

[0020] In the substrate processing system 1 configured as described above, first, the substrate transfer device 13 in the loading / unloading station 2 removes the wafer W from the carrier C placed on the carrier placement unit 11 and places the removed wafer W on the delivery unit 14. The wafer W placed on the delivery unit 14 is then removed from the delivery unit 14 by the substrate transfer device 17 in the processing station 3 and carried into the processing unit 16.

[0021] The wafer W carried into the processing unit 16 is processed by the processing unit 16, and then carried out of the processing unit 16 by the substrate transfer device 17 and placed on the transfer section 14. Then, the processed wafer W placed on the transfer section 14 is returned to the carrier C on the carrier placement section 11 by the substrate transfer device 13.

[0022] Next, the processing unit 16 will be described with reference to Fig. 2. Fig. 2 is a diagram showing the configuration of the processing unit 16 according to the first embodiment.

[0023] As shown in FIG. 2, the processing unit 16 includes a chamber 20, a substrate holding mechanism 30, a processing fluid supply unit 40, and a collection cup 50.

[0024] The chamber 20 accommodates a substrate holding mechanism 30, a processing fluid supply unit 40, and a collection cup 50. An FFU (Fan Filter Unit) 21 is provided on the ceiling of the chamber 20. The FFU 21 forms a downflow within the chamber 20.

[0025] The substrate holding mechanism 30 includes a holding part 31, a support part 32, and a drive part 33. The holding part 31 holds the wafer W horizontally. The support part 32 is a member extending in the vertical direction, and its base end is rotatably supported by the drive part 33, with its tip end supporting the holding part 31 horizontally. The drive part 33 rotates the support part 32 around a vertical axis. The substrate holding mechanism 30 rotates the support part 32 using the drive part 33, thereby rotating the holding part 31 supported by the support part 32, and thereby rotating the wafer W held by the holding part 31.

[0026] The processing fluid supply unit 40 supplies a processing fluid to the wafer W. The processing fluid supply unit 40 is connected to a processing fluid supply source 70.

[0027] Collection cup 50 is disposed to surround holder 31, and collects the processing liquid scattered from wafer W by the rotation of holder 31. A drainage port 51 is formed in the bottom of collection cup 50, and the processing liquid collected by collection cup 50 is discharged from drainage port 51 to the outside of processing unit 16. In addition, an exhaust port 52 is formed in the bottom of collection cup 50, which discharges gas supplied from FFU 21 to the outside of processing unit 16.

[0028] The processing unit 16 also includes a measurement unit 80. The measurement unit 80 is provided on the inner surface of the chamber 20. The measurement unit 80 has a light-projecting unit 81 and a light-receiving unit 82, and projects light onto the wafer W and measures the intensity of the light reflected from the wafer W. The measurement result of the measurement unit 80 is output to the control device 4. When the processing liquid has landed on the wafer W or when the wafer W is not present in the chamber 20, the measurement result of the measurement unit 80 becomes the minimum value "V0", indicating that there is no light reflected from the wafer W. When the processing liquid has not yet landed on the wafer W, the measurement result of the measurement unit 80 becomes a value greater than the minimum value "V0", indicating that there is light reflected from the wafer W. The measurement unit 80 may be, for example, an optical sensor provided on the inner surface of the chamber 20 and used to determine the presence or absence of the wafer W in the chamber 20.

[0029] Next, the configuration of the processing fluid supply part 40 provided in the processing unit 16 will be described with reference to Fig. 3. Fig. 3 is a diagram showing an example of the configuration of the processing fluid supply part 40 according to the first embodiment.

[0030] As shown in FIG. 3, the processing fluid supply unit 40 includes a nozzle 41 that supplies processing liquid toward the wafer W, a nozzle arm 42 that supports the nozzle 41 horizontally, and a pivoting and lifting mechanism (not shown) that pivots and raises and lowers the nozzle arm 42.

[0031] The processing fluid supply unit 40 also includes a supply flow path 43 that connects the nozzle 41 to the processing fluid supply source 70 and supplies the processing liquid from the processing fluid supply source 70 to the nozzle 41 .

[0032] Supply flow path 43 is a tubular member made of a highly chemical-resistant material such as fluororesin. A flow path opening / closing unit 61 is provided in supply flow path 43. Flow path opening / closing unit 61 opens and closes supply flow path 43 in accordance with an open signal and a close signal output from control device 4.

[0033] The flow path opening / closing unit 61 includes an air-operated valve 61a, an air supply pipe 61b, and an air adjustment valve 61c. The air-operated valve 61a opens and closes the supply flow path 43 by moving a valve element using the pressure of air supplied from the air supply pipe 61b. The air adjustment valve 61c is provided in the air supply pipe 61b and adjusts the flow rate of air supplied to the air-operated valve 61a. Specifically, the air adjustment valve 61c adjusts the amount of air supplied to the air-operated valve 61a, thereby controlling the valve element of the air-operated valve 61a to open and close at a preset speed. The air adjustment valve 61c is also called a speed controller.

[0034] When the air regulating valve 61c receives an open signal from the control device 4, it changes the open / close state of the air operated valve 61a from a "closed" state to an "open" state at a preset opening speed. As a result, the valve element of the air operated valve 61a opens at a preset opening speed (set open time). When the air regulating valve 61c receives a close signal from the control device 4, it changes the open / close state of the air operated valve 61a from an "open" state to a "closed" state at a preset closing speed. As a result, the valve element of the air operated valve 61a closes at a preset closing speed (set close time).

[0035] The air adjusting valve 61c is adjusted in advance so as to close the flow path opening / closing unit 61 at an appropriate speed. However, if conditions change, for example, due to long-term use or replacement of components, the flow path opening / closing unit 61 (i.e., the valve body of the air operated valve 61a) may not close at an appropriate speed, which may result in leakage of the processing liquid from the nozzle 41. If leakage of the processing liquid from the nozzle 41 occurs, the leakage may cause the processing liquid to adhere to the wafer W, which may cause fluctuations in light reflection, resulting in fluctuations in the measurement results of the measurement unit 80.

[0036] Therefore, in the substrate processing system 1 according to the first embodiment, the presence or absence of leakage of the processing liquid from the nozzle 41 is monitored based on the measurement result of the measurement unit 80 after outputting a close signal to the flow path opening / closing unit 61. This point will be described in detail below.

[0037] First, the configuration of the control device 4 will be described with reference to FIG. 4. FIG. 4 is a block diagram showing an example of the configuration of the control device 4 according to the first embodiment. Note that in FIG. 4, components necessary for explaining the features of the first embodiment are represented by functional blocks, and descriptions of general components are omitted. That is, each component shown in FIG. 4 is a functional concept, and does not necessarily have to be physically configured as shown. For example, the specific form of distribution and integration of each functional block is not limited to that shown in the figure, and all or part of them can be functionally or physically distributed and integrated in any unit depending on various loads, usage conditions, etc.

[0038] Furthermore, all or any part of the processing functions performed by each functional block of the control device 4 is realized by a processor such as a CPU (Central Processing Unit) and a program analyzed and executed by the processor. Alternatively, each processing function of the control device 4 may be realized as hardware using wired logic.

[0039] 4, the control device 4 includes a control unit 18 and a storage unit 19 (see FIG. 1). The storage unit 19 is realized by, for example, a semiconductor memory element such as a RAM or a flash memory, or a storage device such as a hard disk or an optical disk. The storage unit 19 stores recipe information 19a.

[0040] The recipe information 19a is information indicating the content of the substrate processing, specifically, the content of each process to be performed by the processing unit 16 during the substrate processing, which is registered in advance in the order of the processing sequence.

[0041] Control unit 18 is, for example, a CPU, and functions as, for example, each of the functional blocks shown in Fig. 4 (substrate processing execution unit 18a, monitoring unit 18b, and abnormality response processing unit 18c) by reading and executing a program (not shown) stored in storage unit 19. The program may be recorded on a computer-readable recording medium and installed from the recording medium into storage unit 19 of control device 4. Examples of computer-readable recording media include a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnetic optical disk (MO), and a memory card.

[0042] The control unit 18 includes a substrate processing execution unit 18a, a monitoring unit 18b, and an abnormality handling unit 18c.

[0043] When functioning as substrate processing execution unit 18a, control unit 18 controls processing unit 16 to execute a series of substrate processing in accordance with recipe information 19a stored in storage unit 19. For example, control unit 18 executes a series of substrate processing including a chemical processing in which a chemical liquid is supplied to wafer W, a rinse processing in which a rinse liquid is supplied to wafer W, and a drying processing in which the rotation speed of wafer W is increased to dry wafer W.

[0044] The control unit 18 outputs an open signal and a close signal to the flow path opening / closing unit 61 of the processing fluid supply unit 40 at a timing according to the recipe information 19a, thereby causing the nozzle 41 to discharge a processing liquid according to the content of the substrate processing. The processing liquid discharged from the nozzle 41 lands on the wafer W. At this time, the intensity of the light reflected from the wafer W is measured by the measurement unit 80, and the measurement result is output to the control unit 18.

[0045] When functioning as the monitoring unit 18b, the control unit 18 executes a "monitoring process" based on the measurement results of the measurement unit 80. The "monitoring process" is a process of monitoring whether or not leakage of the processing liquid from the nozzle 41 has occurred.

[0046] The contents of the monitoring process will now be described with reference to Fig. 5. Fig. 5 is a diagram for explaining the execution timing of the monitoring process according to the first embodiment.

[0047] 5, the control unit 18 first acquires the intensity of reflected light measured by the measurement unit 80 before starting a series of substrate processing operations on the wafer W, that is, before outputting an open signal to the flow path opening / closing unit 61, as a "reference intensity" and stores it in the memory unit 19 (time t0). At this point, the flow path opening / closing unit 61 is in a closed state, so the processing liquid has not yet arrived on the wafer W. In other words, the processing liquid is not preventing light from being reflected on the wafer W, so the intensity of reflected light stored in the memory unit 19 as the reference intensity is a value greater than the minimum value "V0."

[0048] Next, the control unit 18 outputs an open signal to the flow path opening / closing unit 61 at the timing to start a series of substrate processing steps for the wafer W (time t1). This causes the flow path opening / closing unit 61 to open at a preset opening speed, and the discharge of the processing liquid from the nozzle 41 begins. At this point, the processing liquid discharged from the nozzle 41 has not yet landed on the wafer W, so the measurement result of the measurement unit 80 is maintained at a value (>V0) indicating that there is reflected light from the wafer W. After a predetermined time has elapsed since the open signal was output to the flow path opening / closing unit 61, the measurement result of the measurement unit 80 gradually decreases toward the minimum value "V0," which indicates that there is no reflected light from the wafer W.

[0049] Next, the control unit 18 outputs a close signal to the flow path opening / closing unit 61 (time t2). This causes the flow path opening / closing unit 61 to close at a preset closing speed, and the discharge of the processing liquid from the nozzle 41 is stopped. At this point, the processing liquid remains on the wafer, so the measurement result of the measurement unit 80 is maintained at the minimum value "V0", which indicates that there is no reflected light from the wafer W. After a predetermined time has elapsed since the close signal was output to the flow path opening / closing unit 61, the measurement result of the measurement unit 80 gradually increases from the minimum value "V0" toward the reference intensity.

[0050] The monitoring process is performed for a predetermined period T1 from the time when a close signal is output to the flow path opening / closing unit 61. The length of the predetermined period T1 is set to a length that exceeds the expected time from the output of the close signal until the flow path opening / closing unit 61 is completely closed and the intensity of the reflected light from the wafer W reaches the reference intensity.

[0051] In the monitoring process, the control unit 18 monitors whether or not the processing liquid is leaking from the nozzle 41 based on the intensity of the reflected light measured by the measurement unit 80 after the output of the close signal.

[0052] The process of monitoring the presence or absence of liquid leakage based on the intensity of reflected light will be described in detail with reference to Fig. 6 and Fig. 7. Fig. 6 is a diagram showing an example of the measurement result of the measurement unit 80 when there is no leakage of the processing liquid from the nozzle 41. Fig. 7 is a diagram showing an example of the measurement result of the measurement unit 80 when there is leakage of the processing liquid from the nozzle 41.

[0053] As shown in FIG. 6, if no liquid leakage occurs, the measurement results of the measuring unit 80 after the reference intensity is reached show no change in the reflected light intensity from the reference intensity.

[0054] On the other hand, as shown in FIG. 7, when a liquid leak occurs, the measurement results of the measuring unit 80 after the reference intensity is reached show a large change in the reflected light intensity compared to when no liquid leak occurs.

[0055] Therefore, the control unit 18 determines whether the amount of change from the reference intensity of the reflected light measured by the measurement unit 80 during the predetermined period T1 after the output of the close signal exceeds a threshold value. If the amount of change exceeds the threshold value, the control unit 18 detects the occurrence of leakage of the treatment liquid.

[0056] In this way, monitoring based on the intensity of reflected light makes it possible to appropriately capture the change in the intensity of reflected light when a liquid leak occurs, thereby enabling highly accurate detection of abnormalities related to liquid leaks. Furthermore, the measurement cycle of the intensity of reflected light is shorter than the capture cycle of images captured by an infrared camera. Therefore, monitoring based on the intensity of reflected light makes it possible to detect instantaneous liquid leaks, such as minute fluctuations in the liquid surface on the wafer W, which cannot be captured by monitoring based on images captured by an infrared camera.

[0057] 7, liquid leakage is detected based on the amount of change in the intensity of reflected light from a reference intensity, but liquid leakage may also be detected using only the intensity of reflected light without using the reference intensity. For example, the control unit 18 compares a first intensity of reflected light measured at a first time point during a predetermined period T1 after the output of the close signal with a second intensity of reflected light measured at a second time point after the first time point, and detects the occurrence of liquid leakage if the amount of change in the second intensity from the first intensity exceeds a threshold.

[0058] Furthermore, the control unit 18 may detect an operational abnormality of the flow path opening and closing unit 61 based on the elapsed time from when a close signal is output to the flow path opening and closing unit 61 until the intensity of the reflected light reaches a reference intensity.

[0059] That is, the control unit 18 determines whether the elapsed time exceeds a threshold value. If the elapsed time exceeds the threshold value, the control unit 18 detects an operational abnormality of the flow path opening / closing unit 61. This makes it possible to detect an operational abnormality of the flow path opening / closing unit 61 in addition to a liquid leak.

[0060] After a predetermined period T1 has elapsed, and then a further predetermined time has elapsed, substrate processing for the first wafer W is completed (time t3). Then, during the period from time t3 to time t4, the first wafer W is unloaded from chamber 20, and the next wafer W is loaded into chamber 20. When the first wafer W is unloaded from chamber 20, no wafer W is present in chamber 20, so the measurement result of measurement unit 80 becomes the minimum value "V0," indicating that no light is reflected from the wafer W. When the next wafer W is loaded into chamber 20, a wafer W is present in chamber 20, so the measurement result of measurement unit 80 becomes a value greater than the minimum value "V0," indicating that light is reflected from the wafer W.

[0061] Subsequently, the control unit 18 outputs an open signal again to the flow path opening / closing unit 61 (time t4) at the timing to start substrate processing on the next wafer W. After time t4, the substrate processing on the next wafer W is executed.

[0062] Returning to Fig. 4, the abnormality handling processor 18c will be described. When the controller 18 detects an abnormality in the monitoring process, the controller 18 functions as the abnormality handling processor 18c and executes a predetermined abnormality handling process.

[0063] For example, the control unit 18 causes the output device 200, such as a display unit or an audio output unit, to output warning information such as a warning screen or a warning sound, thereby making the worker aware that an abnormality has occurred.

[0064] Furthermore, the control unit 18 suspends the substrate processing currently being performed, thereby preventing, for example, leakage of the processing liquid in the next substrate processing, etc., from occurring and causing product defects due to the leaked processing liquid adhering to the wafer W.

[0065] Next, the procedure of the above-mentioned monitoring process will be described with reference to Fig. 8. Fig. 8 is a flowchart showing the procedure of the monitoring process according to the first embodiment.

[0066] As shown in FIG. 8, when a predetermined period T1 (see FIG. 5) starts, the control unit 18 acquires the measurement results of the measurement unit 80 (step S101), and determines whether the amount of variation in the intensity of reflected light in the acquired measurement results from the reference intensity exceeds a threshold value (step S102).

[0067] When it is determined that the amount of variation of the intensity of the reflected light from the reference intensity exceeds the threshold value (Yes in step S102), the control unit 18 detects leakage of the processing liquid from the nozzle 41 (step S103) and executes an abnormality response process (step S104). For example, the control unit 18 suspends the substrate processing and outputs warning information to the output device 200.

[0068] If it is determined in step S102 that the amount of variation in the intensity of the reflected light from the reference intensity does not exceed the threshold (step S102, No), the control unit 18 determines whether or not the predetermined period T1 has ended (step S105). If the predetermined period T1 has not ended (step S105, No), the control unit 18 returns the process to step S101 and repeats steps S101 to S105. The processes of steps S102 and S105 are repeated.

[0069] On the other hand, if the predetermined period T1 has elapsed (Yes in step S105), the control unit 18 determines that there is no leakage of the processing liquid from the nozzle 41 (step S106). After completing the processing in step S104 or step S106, the control unit 18 ends the monitoring processing.

[0070] As described above, the substrate processing apparatus (for example, the substrate processing system 1) according to the first embodiment includes a chamber (for example, the chamber 20), a nozzle (for example, the nozzle 41), a measurement unit (for example, the measurement unit 80), a flow path opening / closing unit (for example, the flow path opening / closing unit 61), and a control unit (for example, the control unit 18). The chamber can accommodate a substrate (for example, a wafer W). The nozzle is provided within the chamber and supplies a processing liquid toward the substrate. The measurement unit projects light onto the substrate and measures the intensity of the light reflected from the substrate. The flow path opening / closing unit opens and closes a supply flow path (for example, the supply flow path 43) for the processing liquid to the nozzle. The control unit outputs an open signal to the flow path opening / closing unit to open the supply flow path and a close signal to the flow path opening / closing unit to close the supply flow path. The control unit detects an abnormality related to leakage of the processing liquid from the nozzle based on the intensity of the reflected light measured by the measurement unit after the close signal is output.

[0071] Therefore, the substrate processing apparatus according to the first embodiment can detect abnormalities related to liquid leakage with high accuracy.

[0072] In the first embodiment described above, the nozzle 41 preferably supplies the processing liquid from above the wafer W toward the wafer W. Furthermore, the processing liquid is preferably supplied from the nozzle 41 while the wafer W is rotating.

[0073] (Second embodiment) In the second embodiment, the timing of acquiring the reference intensity and the timing of executing the monitoring process differ from those in the first embodiment. Fig. 9 is a diagram for explaining the timing of acquiring the reference intensity and the timing of executing the monitoring process according to the second embodiment.

[0074] Here, as the substrate processing, a substrate processing that changes the surface condition of the wafer W using a processing liquid may be performed. The surface condition of the wafer W refers to, for example, the shape or color. The substrate processing that changes the surface condition of the wafer W using a processing liquid refers to, for example, an etching process or a film formation process. In such a substrate processing, the intensity of reflected light from the wafer W may change before and after the change in the surface condition of the wafer W.

[0075] Therefore, in the substrate processing of the first wafer W, the control unit 18 acquires the intensity of the reflected light at the point when the measurement result of the measurement unit 80 converges within a predetermined range after the output of a close signal to the flow path opening / closing unit 61 as a "reference intensity" and stores it in the memory unit 19 (time t0).

[0076] In this way, by obtaining the intensity of the reflected light at the point when the measurement result of the measurement unit 80 converges within a predetermined range after the output of the close signal, it is possible to grasp the intensity of the reflected light after the surface condition of the wafer W has changed.

[0077] In this embodiment, the monitoring process is executed during a predetermined period T1 from the time when a close signal is output again to the flow path opening / closing unit 61 during substrate processing of the next wafer W. The contents of the monitoring process are the same as those described with reference to FIGS.

[0078] As described above, in the second embodiment, the intensity of the reflected light at the time when the measurement result of the measurement unit 80 converges within a predetermined range after the output of the close signal is acquired as the reference intensity. This makes it possible to detect abnormalities related to liquid leakage with high accuracy using the reference intensity, even if the intensity of the reflected light from the wafer W changes before and after the surface condition of the wafer W changes.

[0079] (Third embodiment) The third embodiment differs from the first embodiment in the arrangement of the measurement unit 80. Fig. 10 is a diagram showing an example of the configuration of the treatment fluid supply unit 40 according to the third embodiment.

[0080] As shown in FIG. 10, the processing fluid supply unit 40 according to the third embodiment includes a nozzle 41 that supplies processing liquid toward the wafer W, a nozzle arm 42 that supports the nozzle 41 horizontally, and a pivoting and lifting mechanism (not shown) that pivots and raises and lowers the nozzle arm 42.

[0081] In the third embodiment, a measurement unit 80 is provided on the nozzle arm 42. The measurement unit 80 has a light projecting unit 81 and a light receiving unit 82, projects light from the nozzle arm 42 onto the wafer W, and measures the intensity of the light reflected from the wafer W.

[0082] In this way, by providing the measurement unit 80 on the nozzle arm 42, the position at which light is projected from the measurement unit 80 onto the wafer W can be brought closer to the position at which the processing liquid lands on the wafer W from the nozzle 41. This shortens the time lag from when the light projecting unit 81 of the measurement unit 80 projects light onto the liquid landing position on the wafer W until the light reflected from the liquid landing position on the wafer W is received by the light receiving unit 82. As a result, it is possible to more appropriately capture the point at which the reflected light intensity changes when a liquid leak occurs, thereby enabling instantaneous abnormalities related to liquid leaks to be detected with higher accuracy.

[0083] 10 shows an example in which the measurement unit 80 is provided on the nozzle arm 42, but the arrangement position of the measurement unit 80 is not limited to the position shown in FIG. For example, the measurement unit 80 may be provided on the nozzle 41. In this case, the measurement unit 80 projects light from the nozzle 41 onto the wafer W and measures the intensity of the light reflected from the wafer W. This makes it possible to further shorten the time lag between when the light projecting unit 81 of the measurement unit 80 projects light onto the liquid landing position on the wafer W and when the light reflected from the liquid landing position on the wafer W is received by the light receiving unit 82.

[0084] The disclosed embodiments should be considered in all respects as illustrative and not restrictive. Indeed, the above-described embodiments may be embodied in various forms. Furthermore, the above-described embodiments may be omitted, substituted, or modified in various ways without departing from the scope and spirit of the appended claims. [Explanation of symbols]

[0085] 1. Substrate Processing System 4. Control device 16 Processing Unit 18 Control Unit 19 Memory section 20 Chamber 40 Processing fluid supply unit 41 nozzle 42 Nozzle arm 43 Supply channel 61 Flow path opening and closing section 70 Treatment fluid supply source 80 Measuring part 81 Light projector 82 Light receiving part W wafer

Claims

1. a chamber capable of accommodating a substrate; a nozzle provided in the chamber for supplying a processing liquid toward the substrate; a measuring unit that projects light onto the substrate and measures the intensity of the light reflected from the substrate; a flow path opening / closing unit that opens and closes a supply flow path of the processing liquid to the nozzle; a control unit that outputs an open signal to the flow path opening / closing unit to cause the flow path opening / closing unit to perform an opening operation to open the supply flow path and a close signal to cause the flow path opening / closing unit to perform a closing operation to close the supply flow path; Equipped with The control unit An abnormality related to leakage of the processing liquid from the nozzle is detected based on the intensity of the reflected light measured by the measurement unit after the close signal is output. Substrate processing equipment.

2. The control unit An abnormality related to leakage of the processing liquid from the nozzle is detected based on the amount of change from a reference intensity of the intensity of the reflected light measured by the measurement unit after the output of the close signal. The substrate processing apparatus according to claim 1 .

3. A storage unit is provided, The control unit The intensity of the reflected light measured by the measurement unit before the output of the open signal is acquired as the reference intensity and stored in the storage unit; An abnormality related to leakage of the processing liquid from the nozzle is detected based on the amount of variation from the reference intensity of the reflected light measured by the measurement unit after the output of the close signal. The substrate processing apparatus according to claim 2 .

4. A storage unit is provided, The control unit during substrate processing of the substrate, an intensity of the reflected light measured by the measurement unit after output of the close signal at a time point when the intensity of the reflected light converges within a predetermined range is acquired as the reference intensity and stored in the storage unit; In the next substrate processing for the substrate, an abnormality related to leakage of the processing liquid from the nozzle is detected based on the amount of variation from the reference intensity of the intensity of the reflected light measured by the measurement unit after the output of the close signal. The substrate processing apparatus according to claim 2 .

5. The control unit An operational abnormality of the flow path opening / closing unit is detected based on the elapsed time from when the close signal is output to the flow path opening / closing unit until the intensity of the reflected light reaches the reference intensity. The substrate processing apparatus according to claim 2 .

6. The measurement unit an optical sensor provided on the inner surface of the chamber and used to determine the presence or absence of the substrate in the chamber; The substrate processing apparatus according to claim 1 .

7. The measurement unit The light source is provided on the nozzle or the nozzle arm supporting the nozzle, and projects light from the nozzle or the nozzle arm onto the substrate, and measures the intensity of the light reflected from the substrate. The substrate processing apparatus according to claim 1 .

8. an output step of using a substrate processing apparatus including a chamber capable of accommodating a substrate, a nozzle provided in the chamber and supplying a processing liquid toward the substrate, a measurement unit that projects light onto the substrate and measures the intensity of light reflected from the substrate, and a flow path opening and closing unit that opens and closes a supply flow path of the processing liquid to the nozzle, to the flow path opening and closing unit; an abnormality detection step of detecting an abnormality related to leakage of the processing liquid from the nozzle based on the intensity of the reflected light measured by the measurement unit after the output of the close signal; An anomaly detection method comprising:

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