Resin mask remover composition

Abstract

To provide a resin mask remover composition capable of reducing residues in cleaning after removing a resin mask.SOLUTION: In one aspect, the present disclosure relates to a resin mask remover composition containing a hydroxide (component A), an alkanolamine (component B), two or more azole-based compounds (component C), an organic solvent (component D), and water (component E).SELECTED DRAWING: None

Description

[Technical Field]

[0001] The present disclosure relates to a resin mask remover composition, a method for cleaning a substrate, and a method for manufacturing an electronic component. [Background technology]

[0002] In recent years, personal computers and various electronic devices have become increasingly power-efficient, faster, and more compact, and the wiring on the package substrates and other components they are equipped with has been getting finer every year. Until now, metal masking has been the primary method used to form such fine wiring and connection terminals such as pillars and bumps, but due to its limited versatility and the difficulty of adapting to the miniaturization of wiring, new methods are being adopted.

[0003] One new method is known to use a resin mask, also known as a dry film resist. In this method, a metal seed layer is formed on an insulating substrate by electroless plating. The metal seed layer is then laminated with a resin mask, and a pattern is formed by exposure and development processes, followed by electroplating to form copper wiring and tin bumps. The resin mask remaining on the substrate is finally peeled off and removed, using an alkaline stripping composition (strip cleaner).

[0004] For example, Patent Document 1 proposes a cleaning composition for removing resin masks, which contains a specific amino alcohol, a specific tetraalkylammonium hydroxide, a carboxylic acid having from 1 to 5 carbon atoms or a salt thereof, a specific glycol ether, a specific imidazole compound, and water. Patent Document 2 proposes a dry film resist stripping liquid composition containing 10 to 30% by weight of an aqueous solution of a quaternary ammonium salt selected from tetramethylammonium hydroxide, tetramethylammonium pentafluoroxenonate, and mixtures thereof, 30 to 60% by weight of an alkanolamine compound, 10 to 30% by weight of a protic (positive polar) organic solvent, and 0.1 to 5% by weight of an azole compound containing sulfur. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Japanese Patent Application Laid-Open No. 2017-116871 [Patent Document 2] Special Publication No. 2020-519915 Summary of the Invention [Problem to be solved by the invention]

[0006] When forming fine wiring on a printed circuit board or the like, the stripper composition is required to have high resin mask removal properties (stripping ability and cleaning ability) in order to reduce not only the residue of the resin mask but also the residue of auxiliary agents contained in the solder, plating solution, etc. used in forming the fine wiring or bumps. Furthermore, corrosion and discoloration of metals such as copper, which are often used in wiring and connection terminals, can lead to a decrease in the quality and value of package substrates. Therefore, the release agent composition is required to have high anti-corrosion and anti-discoloration properties. Furthermore, in the resin mask cleaning process, after the resin mask is removed with a remover, it is usually washed (e.g. For example, acid cleaning is performed after the resin mask is removed (hereinafter referred to as "post-cleaning"). Even after the resin mask cleaning process, residues of components in the stripper composition (e.g., inhibitors) may remain. If components such as inhibitors remain on the substrate, they may adversely affect processes subsequent to the resin mask cleaning process (e.g., metal seed layer removal process). In order to prevent adverse effects on processes subsequent to the resin mask cleaning process (e.g., metal seed layer removal process), the stripper composition contains a high concentration of Easy post-cleaning properties (low residues left when cleaning after removing the resin mask) are required.

[0007] Therefore, the present disclosure provides a resin mask remover composition that can reduce residues during cleaning after removing a resin mask, a method for cleaning a substrate, and a method for manufacturing electronic components. [Means for solving the problem]

[0008] In one aspect, the present disclosure relates to a resin mask remover composition containing the following components A, B, C, D and E. Component A: Hydroxide Component B: Alkanolamine Component C: two or more azole compounds Component D: Organic solvent Ingredient E: Water

[0009] In one aspect, the present disclosure relates to a resin mask remover composition containing the following components A, B, C, D, and E, wherein the mass ratio B / C of component B to component C is 1 or more and 500 or less, and the mass ratio E / C of component E to component C is 100 or more and 3000 or less. Component A: Hydroxide Component B: Alkanolamine Component C: two or more azole compounds Component D: Organic solvent Ingredient E: Water

[0010] In one aspect, the present disclosure relates to a method for cleaning a substrate, comprising stripping a resin mask from a substrate having a copper-containing metal layer and a resin mask on its surface using the resin mask stripper composition of the present disclosure.

[0011] In one aspect, the present disclosure relates to a method for producing an electronic component, comprising a step of cleaning a substrate having a copper-containing metal layer and a resin mask on its surface using the cleaning method of the present disclosure. [Effects of the Invention]

[0012] According to one aspect of the present disclosure, a resin mask remover composition can be provided that can reduce residues that occur during cleaning after a resin mask is removed with the remover composition. DETAILED DESCRIPTION OF THE INVENTION

[0013] [Removal agent composition] The present disclosure is based on the finding that, in one or more embodiments, a stripper composition containing a hydroxide, an alkanolamine, two or more azole compounds, an organic solvent, and water can be used to efficiently remove (stripped) a resin mask while reducing residues in cleaning after the resin mask is stripped (improving low residue in post-cleaning). Furthermore, in one or more embodiments, the present disclosure is based on the finding that, when the resin mask is stripped from a substrate having a copper-containing metal layer and a resin mask on its surface, the resin mask can be efficiently removed (stripped) while suppressing copper corrosion and discoloration.

[0014] That is, in one aspect, the present disclosure relates to a resin mask stripper composition (hereinafter also referred to as "the stripper composition of the present disclosure") containing the following components A, B, C, D, and E. Component A: Hydroxide Component B: Alkanolamine Component C: two or more azole compounds Component D: Organic solvent Ingredient E: Water

[0015] According to one or more embodiments of the present disclosure, a resin mask remover composition can be provided that can efficiently remove (stripping) a resin mask while reducing residues in cleaning after the resin mask is stripped (improving the ability to reduce residues in post-cleaning). Furthermore, in one or more embodiments, when a resin mask is stripped from a substrate having a copper-containing metal layer and a resin mask on its surface, the resin mask can be efficiently removed (stripped) while suppressing copper corrosion and discoloration. Furthermore, by using the resin mask remover composition of the present disclosure for cleaning electronic components such as electronic circuit boards having a resin mask, high-quality electronic components can be obtained with a high yield.

[0016] Although the details of the mechanism of action by which the effects of the present disclosure are manifested are still unclear, it is presumed as follows. In the present disclosure, it is believed that by using a hydroxide (component A) and an alkanolamine (component B) in combination, components A and B penetrate into the resin mask, promoting dissociation of the alkali-soluble resin contained in the resin mask, and further promoting peeling of the resin mask by causing repulsion of the charges generated by the dissociation. On the other hand, alkanolamine (component B) is also thought to be involved in copper etching (corrosion). However, in the present disclosure, a protective film is formed by the adsorption of two or more azole compounds (component C) onto the copper surface, and copper etching (corrosion) due to the coordination of alkanolamine (component B) is thought to be suppressed. As a result, in the presence of alkanolamine (component B), good stripping performance (resin mask removal ability) is thought to be exhibited while copper etching (corrosion) is suppressed. Furthermore, forming a protective film on the copper surface is generally known to be an effective method for inhibiting copper etching (corrosion). However, excessive formation of the protective film can make it difficult to remove residues on the substrate, which can adversely affect processes subsequent to the resin mask cleaning process (e.g., the metal seed layer removal process). Furthermore, excessive formation of the protective film can discolor the copper surface, resulting in a decrease in substrate quality. In contrast, the present disclosure believes that by incorporating two or more azole-based compounds (component C), the formation of the protective film can be controlled, thereby reducing residues on the substrate during post-cleaning and preventing adverse effects on processes subsequent to the resin mask cleaning process (e.g., the metal seed layer removal process). Furthermore, it is believed that copper etching (corrosion) and discoloration can be inhibited. However, the present disclosure need not be construed as being limited to this mechanism.

[0017] In the present disclosure, a resin mask is a mask for protecting the surface of a material from treatments such as etching, plating, and heating, that is, a mask formed from a resin that functions as a protective film. In one or more embodiments, the resin mask may be a resist layer after exposure and development processes, a resist layer that has been subjected to at least one of exposure and development processes (hereinafter also referred to as "exposed and / or developed"), or a hardened resist layer. In one or more embodiments, the resin mask is formed using a resist whose physical properties, such as solubility in a developer, change when exposed to light, an electron beam, or the like. Resists are broadly divided into negative and positive types based on the reaction method with light or an electron beam. Negative resists have the property of decreasing their solubility in a developer when exposed to light, and the exposed portion of a layer containing negative resist (hereinafter also referred to as a "negative resist layer") is used as a resin mask after exposure and development processing. Positive resists have the property of increasing their solubility in a developer when exposed to light, and the exposed portion of a layer containing positive resist (hereinafter also referred to as a "positive resist layer") is removed after exposure and development processing, and the unexposed portion is used as a resin mask. By using a resin mask with such properties, it is possible to form metal wiring, metal pillars, solder bumps, and other structures. It is also possible to form fine connections on the circuit board. In one or more embodiments, the resin material for forming the resin mask may be a film-like photosensitive resin, a resist film, or a photoresist. A general-purpose resist film may be used. In one or more embodiments, the resin mask is a copper or tin plating mask for use in a copper or tin plating process. In the present disclosure, cleaning a resin mask includes stripping the resin mask from a substrate having the resin mask thereon using a stripper composition. Stripping the resin mask may include removing and / or dissolving the resin mask.

[0018] In one or more embodiments, the stripper composition of the present disclosure can be used for cleaning a substrate (object to be cleaned) having a copper-containing metal layer and a resin mask on its surface. In one or more embodiments, the stripper composition of the present disclosure can be used for stripping the resin mask from a substrate (object to be cleaned) having a copper-containing metal layer and a resin mask on its surface. That is, in one aspect, the present disclosure relates to use of the stripper composition of the present disclosure for stripping the resin mask from a substrate (object to be cleaned) having a copper-containing metal layer and a resin mask on its surface.

[0019] (Component A: hydroxide) The hydroxide contained in the stripper composition of the present disclosure (hereinafter also referred to as "Component A") includes at least one selected from aliphatic quaternary ammonium hydroxides and inorganic metal hydroxides. Component A may be one type or a combination of two or more types.

[0020] <Aliphatic quaternary ammonium hydroxide> Examples of aliphatic quaternary ammonium hydroxides include quaternary ammonium hydroxides represented by the following formula (I): The aliphatic quaternary ammonium hydroxides may be one type or a combination of two or more types. [ka] In the above formula (I), R 1 , R 2 , R 3 and R 4 are each independently at least one selected from a methyl group, an ethyl group, a propyl group, a hydroxymethyl group, a hydroxyethyl group, and a hydroxypropyl group.

[0021] The quaternary ammonium hydroxide represented by formula (I) is a salt consisting of a quaternary ammonium cation and hydroxide, and examples thereof include tetramethylammonium hydroxide (TMAH), tetraethylammonium hydroxide, tetrapropylammonium hydroxide, 2-hydroxyethyltrimethylammonium hydroxide (choline), 2-hydroxyethyltriethylammonium hydroxide, 2-hydroxyethyltripropylammonium hydroxide, 2-hydroxypropyltrimethylammonium hydroxide, 2-hydroxypropyltriethylammonium hydroxide, 2-hydroxypropyltripropylammonium hydroxide, dimethylbis(2-hydroxyethyl)ammonium hydroxide, diethylbis(2-hydroxyethyl)ammonium hydroxide, dipropylbis(2-hydroxyethyl)ammonium hydroxide, tris(2-hydroxyethyl)methylammonium hydroxide, tris(2-hydroxyethyl)methylammonium hydroxide, tris(2-hydroxyethyl)methylammonium hydroxide, )ethylammonium hydroxide, tris(2-hydroxyethyl)propylammonium hydroxide, tetrakis(2-hydroxyethyl)ammonium hydroxide, and tetrakis(2-hydroxypropyl)ammonium hydroxide. Among these, from the viewpoint of improving the removability of the resin mask, it is preferable that component A contains tetramethylammonium hydroxide (TMAH).

[0022] When component A contains an aliphatic quaternary ammonium hydroxide, the content of the aliphatic quaternary ammonium hydroxide in the stripper composition of the present disclosure is preferably 0.5% by mass or more, more preferably 1.5% by mass or more, and even more preferably 2.5% by mass or more, from the viewpoints of improving resin mask removability (stripping ability) and inhibiting copper corrosion, and from the same viewpoints, is preferably 15% by mass or less, more preferably 10% by mass or less, and even more preferably 8% by mass or less. When two or more types of aliphatic quaternary ammonium are used in combination, the content of the aliphatic quaternary ammonium refers to the total content thereof.

[0023] <Inorganic metal hydroxide> Examples of inorganic metal hydroxides include alkali metal hydroxides, and from the viewpoint of improving the removability (peelability) of the resin mask, examples include at least one selected from sodium hydroxide, potassium hydroxide, lithium hydroxide, and calcium hydroxide, and among these, potassium hydroxide is preferred. The inorganic metal hydroxides may be used alone or in combination of two or more. When the stripper composition of the present disclosure contains an inorganic metal hydroxide, the content of the inorganic metal hydroxide in the stripper composition of the present disclosure is preferably 0.1 mass% or more, more preferably 0.3 mass% or more, and even more preferably 0.5 mass% or more, from the viewpoints of improving resin mask removability (stripping ability) and inhibiting copper corrosion, and from the same viewpoints, is preferably 10 mass% or less, more preferably 8 mass% or less, and even more preferably 5 mass% or less. When two or more inorganic metal hydroxides are used in combination, the content of the inorganic metal hydroxides refers to the total content thereof.

[0024] From the viewpoint of improving resin mask removability, Component A preferably contains an aliphatic quaternary ammonium hydroxide, and more preferably contains tetramethylammonium hydroxide (TMAH). From the same viewpoint, in one or more embodiments, the content of the aliphatic quaternary ammonium hydroxide in Component A is preferably 0.5% by mass or more, more preferably 1.5% by mass or more, even more preferably 2.5% by mass or more, and even more preferably 3.5% by mass. From the same viewpoint, in one or more embodiments, the content of the aliphatic quaternary ammonium hydroxide in Component A is preferably 30% by mass or more, preferably 40% by mass or more, and preferably 50% by mass or more. In one or more embodiments, the content of the aliphatic quaternary ammonium hydroxide in Component A may be 75% by mass or more, or may be 100% by mass.

[0025] The content of Component A in the stripper composition of the present disclosure is preferably 1% by mass or more, more preferably 2% by mass or more, and even more preferably 4% by mass or more, from the viewpoints of improving resin mask removability (stripping ability) and inhibiting copper corrosion, and from the same viewpoints, is preferably 15% by mass or less, more preferably 10% by mass or less, and even more preferably 8% by mass or less. When Component A is a combination of two or more types, the content of Component A refers to the total content thereof.

[0026] In the present disclosure, the "content of each component in the stripper composition" refers to the content of each component at the time of use (at the time of cleaning), i.e., at the time when the stripper composition starts to be used for cleaning (resin mask stripping treatment). In one or more embodiments, the content of each component in the stripper composition of the present disclosure can be considered to be the blending amount of each component in the stripper composition of the present disclosure.

[0027] (Component B: Alkanolamine) The alkanolamine (amino alcohol) (hereinafter also referred to as "component B") contained in the stripper composition of the present disclosure includes, for example, a compound represented by the following formula (II): Component B may be one type or a combination of two or more types. [ka]

[0028] In the above formula (II), R 5 represents a hydrogen atom, a methyl group, an ethyl group, or an aminoethyl group. indicates R 6 is a hydrogen atom, a hydroxyethyl group, a hydroxypropyl group, a methyl group, or indicates an ethyl group, and R 7 represents a hydroxyethyl group or a hydroxypropyl group.

[0029] Examples of component B include at least one selected from monoethanolamine (MEA), monoisopropanolamine, N-methylmonoethanolamine, N-methylisopropanolamine, N-ethylmonoethanolamine, N-ethylisopropanolamine, diethanolamine, diisopropanolamine, N-dimethylmonoethanolamine, N-dimethylmonoisopropanolamine, N-methyldiethanolamine, N-methyldiisopropanolamine, N-diethylmonoethanolamine, N-diethylmonoisopropanolamine, N-ethyldiethanolamine, N-ethyldiisopropanolamine, N-(β-aminoethyl)ethanolamine, N-(β-aminoethyl)isopropanolamine, N-(β-aminoethyl)diethanolamine, and N-(β-aminoethyl)diisopropanolamine. Among these, from the viewpoint of improving resin mask removability, component B preferably contains monoethanolamine (MEA).

[0030] The content of Component B in the stripper composition of the present disclosure is preferably 1% by mass or more, more preferably 6% by mass or more, and even more preferably 10% by mass or more, from the viewpoints of improving resin mask removability and inhibiting copper corrosion, and from the same viewpoints, is preferably 18% by mass or less, more preferably 16% by mass or less, and even more preferably 14% by mass or less. When Component B is a combination of two or more types, the content of Component B refers to the total content thereof.

[0031] (Component C: two or more azole compounds) The cleaning composition of the present disclosure contains two or more azole compounds (hereinafter also referred to as "Component C"), which may be a combination of two or more azoles or derivatives thereof, from the viewpoints of inhibiting copper corrosion, inhibiting discoloration, and reducing residues in post-cleaning. For example, a combination of two or more azoles or derivatives thereof is preferably used. For example, a combination of two or more azoles or derivatives thereof is preferably used. In one or more embodiments, the compound having an imidazole skeleton is a compound having a benzimidazole skeleton, such as benzimidazole (BI), 5-methylbenzimidazole (MBI), 5,6-dimethylbenzimidazole (DMBI), 5-methylbenzimidazole (DMBI), 5,6-dimethyl ... Examples of compounds having a triazole skeleton include benzotriazole (BTA), 1-methylbenzotriazole (MBTA), tolyltriazole (TTA), and 5,6-dimethylbenzotriazole (DMBTA). It can be obtained. In one or more embodiments, component C contains at least one compound having an imidazole skeleton (i.e., at least one of the two or more azole compounds is an imidazole) from the viewpoint of inhibiting copper corrosion, inhibiting discoloration, and improving the low residue remaining in post-cleaning. It is preferable that the compound contains at least one compound having a benzimidazole skeleton, and more preferable that the compound contains at least one compound having a benzimidazole skeleton, and at least one compound selected from benzimidazole (BI), 5-methylbenzimidazole (MBI), and 5,6-dimethylbenzimidazole (DMBI). It is more preferable that the component C contains at least one compound having an imidazole skeleton. In one or more embodiments, from the same viewpoint, the content of the compound having an imidazole skeleton in component C is preferably 0.01% by mass or more, more preferably 0.03% by mass or more, and even more preferably 0.05% by mass or more. In one or more embodiments, from the same viewpoint, the content of the compound having an imidazole skeleton in component C is preferably 40% by mass or more, more preferably 50% by mass or more, even more preferably 80% by mass or more, still more preferably 90% by mass or more, and still more preferably 100% by mass. From the same viewpoint, component C preferably comprises a compound having two kinds of imidazole skeletons or a compound having two or more kinds of imidazole skeletons, and more preferably comprises a compound having two or more kinds of benzimidazole skeletons, and more preferably comprises a compound having two or more kinds of benzimidazole skeletons, and more preferably comprises benzimidazole (BI), 5-methylbenzimidazole (MBI), 5,6-dimethylbenzimidazole (DMB), It is more preferable to use a combination of at least two or more selected from I). From the same viewpoint, component C is preferably a combination of at least one compound having an imidazole skeleton (preferably a benzimidazole skeleton) and at least one compound having a triazole skeleton. From the same viewpoint, the mass ratio of the content of the compound having an imidazole skeleton to the content of the compound having a triazole skeleton in component C (compound having an imidazole skeleton / compound having a triazole skeleton) is preferably 0.01 or more, more preferably 0.1 or more, and even more preferably 0.5 or more, and from the same viewpoint, is preferably 10 or less, more preferably 8 or less, and even more preferably 5 or less.

[0032] The content of component C in the stripper composition of the present disclosure is preferably 0.05% by mass or more, more preferably 0.07% by mass or more, and even more preferably 0.1% by mass or more, from the viewpoint of improving low residue retention in post-cleaning, and from the same viewpoint, is preferably 0.5% by mass or less, more preferably 0.4% by mass or less, and even more preferably 0.3% by mass or less. More specifically, the content of component C in the stripper composition of the present disclosure is preferably 0.05% by mass or more and 0.5% by mass or less, more preferably 0.07% by mass or more and 0.4% by mass or less, and even more preferably 0.1% by mass or more and 0.3% by mass or less. % or less, more preferably 0.1% or less. Here, the content of component C refers to the total content of a combination of two or more types.

[0033] When the two or more components C contained in the stripping composition of the present disclosure are designated as c1 and c2 (three or more components In the above combination, the mass ratio c1 / c2 of the first type (c1) and all other types (c2) is preferably 0.02 or more, more preferably 0.05 or more, and even more preferably 0.1 or more, from the viewpoints of inhibiting copper corrosion, inhibiting discoloration, and improving the low residue remaining in post-cleaning, and from the same viewpoints, is preferably 50 or less, more preferably 20 or less, and even more preferably 10 or less. More specifically, the mass ratio c1 / c2 is preferably 0.02 or more and 50 or less, more preferably 0.05 or more and 20 or less, and even more preferably 0.1 or more and 10 or less. In one or more embodiments, c1 includes a compound having an imidazole skeleton (preferably a benzimidazole skeleton).

[0034] <Mass ratio A / C> The mass ratio A / C of Components A to C (content of Component A / content of Component C) in the stripper composition of the present disclosure is preferably 10 or more, more preferably 15 or more, from the viewpoint of improving resin mask removability and inhibiting copper corrosion, and is preferably 200 or less, more preferably 100 or less, 50 or less, or 30 or less, from the viewpoint of inhibiting copper corrosion. The mass ratio A / C in the stripper composition of the present disclosure is preferably 10 or more and 200 or less, more preferably 15 or more and 100 or less, from the viewpoint of inhibiting copper corrosion. When component A is an aliphatic quaternary ammonium hydroxide, the mass ratio A / C is From the viewpoint of improving removability and inhibiting copper corrosion, it is preferably 10 or more, more preferably 15 or more, and even more preferably 20 or more, and from the viewpoint of inhibiting copper corrosion, it is preferably 200 or less, more preferably 100 or less. When component A contains an aliphatic quaternary ammonium hydroxide and an inorganic metal hydroxide, the mass ratio A / C is preferably 10 or more, and preferably 15 or more, from the viewpoint of improving resin mask removability and inhibiting copper corrosion, and is preferably 200 or less, and preferably 100 or less, and preferably 50 or less, and preferably 30 or less, from the viewpoint of inhibiting copper corrosion.

[0035] <Mass ratio B / C> The mass ratio B / C of component B to component C (content of component B / content of component C) in the stripper composition of the present disclosure is preferably 1 or more, more preferably 20 or more, more preferably 40 or more, or more preferably 50 or more from the viewpoint of improving resin mask removability, and is preferably 500 or less, more preferably 200 or less, or more preferably 150 or less from the viewpoint of copper corrosion inhibition. More specifically, the mass ratio B / C in the stripper composition of the present disclosure is preferably 1 or more and 500 or less, and more preferably 20 or more and 200 or less. is more preferable, 40 or more and 150 or less is even more preferable, and 50 or more and 150 or less is even more preferable.

[0036] [Organic solvent (component D)] The organic solvent contained in the stripping composition of the present disclosure (hereinafter also referred to as "component D") may be one type or a combination of two or more types. In one or more embodiments, Component D may include at least one solvent selected from glycol ethers and aromatic ketones. Examples of glycol ethers include compounds having a structure in which 1 to 3 moles of ethylene glycol are added to an alcohol having 1 to 8 carbon atoms. Specific examples of glycol ethers include at least one selected from diethylene glycol monobutyl ether (BDG), ethylene glycol monobenzyl ether, diethylene glycol monohexyl ether, ethylene glycol monophenyl ether, and diethylene glycol diethyl ether. Examples of aromatic ketones include acetophenone. Among these, from the viewpoint of improving the removability of the resin mask, Component D is preferably a glycol ether, and more preferably diethylene glycol monobutyl ether (BDG).

[0037] From the viewpoint of improving the removability of the resin mask, the content of component D in the stripper composition of the present disclosure is preferably 1% by mass or more, more preferably 3% by mass or more, and even more preferably 5% by mass or more, and from the same viewpoint, is 15% by mass or less, more preferably 13% by mass or less, and even more preferably 10% by mass or less. When component D is a combination of two or more types, the content of component D refers to the total content thereof.

[0038] <Mass ratio B / D> The mass ratio B / D of component B to component D in the stripping composition of the present disclosure (content of component B / component D) The content of component D is preferably 0.1 or more or 0.3 or more from the viewpoint of improving the removability of the resin mask. From the viewpoint of copper corrosion inhibition, the mass ratio B / D is preferably 10 or less, more preferably 5 or less, even more preferably 3.2 or less, even more preferably 2.6 or less, and even more preferably 2 or less. More specifically, the mass ratio B / D in the stripper composition of the present disclosure is preferably 0.1 or more and 10 or 0.3 or more and 10 or less, more preferably 0.7 or more and 5 or less, even more preferably 1 or more and 3.2 or less, even more preferably 1 or more and 2.6 or less, and even more preferably 1 or more and 2 or less.

[0039] <Mass ratio C / D> The mass ratio C / D of component C to component D (content of component C / content of component D) in the stripper composition of the present disclosure is preferably 0.001 or more, and more preferably 0.01 or less, from the viewpoint of improving the removability of the resin mask. The above is more preferable, and from the same viewpoint, it is preferably 0.5 or less, more preferably 0.1 or less. The mass ratio C / D in the release agent composition of the present disclosure is preferably 0.001 or more and 0.5 or less, more preferably 0.01 or more and 0.1 or less.

[0040] (Component E: Water) In one or more embodiments, examples of the water contained in the cleaning composition of the present disclosure (hereinafter also referred to as "component E") include ion-exchanged water, RO water, distilled water, pure water, and ultrapure water.

[0041] The content of component E in the stripper composition of the present disclosure can be the remainder excluding components A, B, C, D, and the optional components described below. Specifically, the content of component E in the stripper composition of the present disclosure is preferably 60% by mass or more, more preferably 65% ​​by mass or more, and even more preferably 70% by mass or more, from the viewpoints of improving resin mask removability and inhibiting copper corrosion, and is preferably 98% by mass or less, more preferably 90% by mass or less, and even more preferably 85% by mass or less, from the viewpoint of improving resin mask removability. The content of component E in the stripper composition of the present disclosure is preferably 60% by mass or more and 98% by mass or less, more preferably 65% ​​by mass or more and 90% by mass or less, and even more preferably 70% by mass or more and 85% by mass or less.

[0042] <Mass ratio E / A> The mass ratio E / A of Component E to Component A (content of Component E / content of Component A) in the stripper composition of the present disclosure is preferably 0.1 or more, more preferably 1 or more, and even more preferably 5 or more, from the viewpoint of improving the removability of the resin mask, and from the same viewpoint, is preferably 100 or less, more preferably 50 or less, and even more preferably 20 or less. More specifically, the mass ratio E / A in the stripper composition of the present disclosure is preferably 0.1 or more and 100 or less, more preferably 1 or more and 50 or less, and even more preferably 5 or more and 20 or less.

[0043] <Mass ratio E / B> The mass ratio E / B of component E to component B (content of component E / content of component B) in the stripper composition of the present disclosure is preferably 0.1 or more, more preferably 1 or more, and even more preferably 2 or more, from the viewpoint of improving the removability of the resin mask, and from the same viewpoint, is preferably 100 or less, more preferably 20 or less, and even more preferably 10 or less. More specifically, the mass ratio E / B in the stripper composition of the present disclosure is preferably 0.1 or more and 100 or less, more preferably 1 or more and 20 or less, and even more preferably 2 or more and 10 or less.

[0044] <Mass ratio E / C> From the viewpoint of post-cleaning properties, the mass ratio E / C of component E to component C (content of component E / content of component C) in the stripper composition of the present disclosure is preferably 100 or more, more preferably 150 or more, even more preferably 300 or more, and is preferably 3000 or less, more preferably 2000 or less, even more preferably 1000 or less, and even more preferably 500 or less. More specifically, the mass ratio E / C in the stripper composition of the present disclosure is preferably 100 or more and 3000 or less, more preferably 150 or more and 2000 or less, even more preferably 300 or more and 1000 or less, and even more preferably 300 or more and 500 or less.

[0045] <Mass ratio E / D> From the viewpoint of improving the removability of the resin mask, the mass ratio E / D of component E to component D (content of component E / content of component D) in the stripper composition of the present disclosure is preferably 0.1 or more, more preferably 1 or more, even more preferably 2 or more, and is preferably 100 or less, more preferably 20 or less, and even more preferably 10 or less. More specifically, the mass ratio E / D in the stripper composition of the present disclosure is preferably 0.1 or more and 100 or less, more preferably 1 or more and 20 or less, and even more preferably 2 or more and 10 or less.

[0046] In one or more embodiments, the stripper composition of the present disclosure preferably has a mass ratio B / C of 1 or more and 500 or less, and a mass ratio E / C of 100 or more and 3,000 or less, from the viewpoint of improving the removability of the resin mask. Therefore, in another aspect, the present disclosure relates to a resin mask remover composition containing the following components A, B, C, D, and E, wherein the mass ratio B / C of component B to component C is 1 or more and 500 or less, and the mass ratio E / C of component E to component C is 100 or more and 3000 or less. Component A: Hydroxide Component B: Alkanolamine Component C: two or more azole compounds Component D: Organic solvent Ingredient E: Water

[0047] (Other ingredients) The stripping agent composition of the present disclosure may further contain other components as necessary in addition to the above-described Components A to E. Examples of other components include components that can be used in ordinary cleaners, such as alkaline agents other than Components A and B, amines other than Component B, solvents other than Component D, corrosion inhibitors other than Component C, surfactants, chelating agents, thickeners, dispersants, rust inhibitors, polymeric compounds, solubilizers, antioxidants, preservatives, antifoaming agents, and antibacterial agents.

[0048] In one or more embodiments, the stripper composition of the present disclosure can be substantially free of a carboxylic acid or a salt thereof having from 1 to 5 carbon atoms. The content of a carboxylic acid or a salt thereof having from 1 to 5 carbon atoms in the stripper composition of the present disclosure is preferably less than 0.05% by mass, more preferably 0.01% by mass or less, and even more preferably 0% by mass (i.e., no content). In one or more embodiments, the stripper composition of the present disclosure can be substantially free of sulfur-containing azole compounds. The content of sulfur-containing azole compounds in the stripper composition of the present disclosure is preferably less than 0.1% by mass, more preferably 0.01% by mass or less, and even more preferably 0% by mass (i.e., no sulfur is contained).

[0049] From the viewpoint of improving resin mask removability, the pH of the stripper composition of the present disclosure is preferably 10 or higher, more preferably 12 or higher, even more preferably 13.3 or higher, and even more preferably 13. The pH of the stripping composition is preferably 5 or more, and more preferably 14.0 or more. The pH of the stripping composition is the value at 25° C. and can be measured using a pH meter, specifically, by the method described in the examples.

[0050] The stripper composition according to the present disclosure may be a so-called one-component type, in which all components are premixed and supplied to the market, or may be a so-called two-component type, in which components are mixed at the time of use.

[0051] [Method of producing the release agent composition] In one or more embodiments, the release agent composition of the present disclosure can be produced by blending the components A to E and, if necessary, the optional components (other components) described above using a known method. For example, the release agent composition of the present disclosure can be produced by blending at least the components A to E. Therefore, the present disclosure relates to a method for producing a release agent composition that includes a step of blending at least the components A to E. In the present disclosure, "blending" includes mixing the components A to E and, if necessary, the optional components (other components) described above simultaneously or in any order. In the method for producing the release agent composition of the present disclosure, the preferred amount of each component may be the same as the preferred content of each component in the release agent composition of the present disclosure described above.

[0052] The stripper composition of the present disclosure may be in a form that is used as is for cleaning (resin mask stripping treatment), or may be prepared as a concentrate to the extent that separation, precipitation, etc. do not occur and storage stability is not impaired. The stripper composition concentrate of the present disclosure can be used by diluting it so that each component has the above-mentioned content (i.e., the content at the time of cleaning) at the time of use. The stripper composition concentrate can also be used by adding each component separately at the time of use. In the present disclosure, "at the time of use" or "at the time of cleaning" of the concentrated stripper composition refers to the state in which the stripper composition concentrate is diluted.

[0053] [Items to be cleaned] In one or more embodiments, the object to be cleaned is a substrate having a copper-containing metal layer and a resin mask on its surface. In one or more embodiments, the substrate having a copper-containing metal layer and a resin mask on its surface has undergone at least one of soldering and plating using a resin mask. In one or more embodiments, the copper-containing metal layer is a copper plating layer. The copper plating layer can be formed, for example, by electroless copper plating. In one or more embodiments, the copper-containing metal layer is used as metal wiring. The thickness of the copper-containing metal layer is, for example, 3 μm to 30 μm. The substrate may be, for example, an insulating plate or film.

[0054] In one or more embodiments, the object to be cleaned may be an electronic component having a copper-containing metal portion and a resin mask on its surface, or a manufacturing intermediate thereof. In one or more embodiments, the object may be a manufacturing intermediate in a modified semi-additive process (MSAP). The electronic component may be, for example, at least one component selected from a printed circuit board, a wafer, and a metal plate such as a copper plate or an aluminum plate. The manufacturing intermediate is an intermediate product in the manufacturing process of an electronic component, including an intermediate product after resin mask treatment. Specific examples of objects to be cleaned include electronic components in which wiring, connection terminals, etc. are formed on the surface of a substrate by at least one of soldering using a resin mask and plating (copper plating, aluminum plating, nickel plating, tin plating, etc.). In this disclosure, soldering refers to applying solder to the resin mask-free areas of the substrate and heating to form solder bumps. In this disclosure, plating refers to performing at least one plating treatment selected from copper plating, aluminum plating, nickel plating, and tin plating on the resin mask-free areas of the substrate. The resin mask-free areas refer to areas in a resist pattern (a patterned resin mask) formed by developing a resin mask laminated on a substrate, where the resin mask has been removed by the development treatment. Thus, in one aspect, the present disclosure relates to use of the cleaning composition of the present disclosure as a cleaner in the production of electronic components.

[0055] In one or more embodiments, the object to be cleaned is a substrate having a resist pattern (a patterned resin mask) formed by developing a resin mask laminated on the substrate, which has undergone at least one of soldering and plating. For example, the object to be cleaned may be a substrate having a resin mask-existing portion where a hardened resist layer is formed on the substrate, and a solder bump or a plating layer formed in a resin mask-free portion.

[0056] The resin mask may be, for example, a negative resin mask or a positive resin mask. In the present disclosure, a negative resin mask is formed using a negative resist, and examples thereof include a negative resist layer that has been subjected to exposure and / or development. In the present disclosure, a positive resin mask is formed using a positive resist, and examples thereof include a positive resist layer that has been subjected to exposure and / or development.

[0057] [How to clean the substrate] In one aspect, the present disclosure relates to a method for cleaning a substrate (hereinafter also referred to as the "cleaning method of the present disclosure"), which comprises stripping a resin mask from a substrate (object to be cleaned) having a copper-containing metal layer and a resin mask on its surface using a stripper composition of the present disclosure. The object to be cleaned in the stripping step includes the above-described objects to be cleaned. In one or more embodiments, the stripping step comprises contacting the object to be cleaned with the stripper composition of the present disclosure. According to the cleaning method of the present disclosure, it is possible to obtain a substrate that can efficiently remove (peel) a resin mask while reducing residues in cleaning after the peeling (improving low residues in post-cleaning). Furthermore, according to one or more embodiments, according to the cleaning method of the present disclosure, when peeling a resin mask from a substrate having a copper-containing metal layer and a resin mask on its surface, it is possible to efficiently remove (peel) the resin mask while suppressing copper corrosion and discoloration. Furthermore, by using the cleaning method of the present disclosure to clean electronic components such as electronic circuit boards that have a resin mask, it is possible to obtain high-quality electronic components with a high yield.

[0058] Examples of a method for peeling a resin mask from an object to be cleaned using the stripper composition of the present disclosure, or a method for contacting an object to be cleaned with the stripper composition of the present disclosure, include a method of contacting the object by immersing the object in a cleaning bath containing the stripper composition, a method of contacting the object by spraying the stripper composition (shower method), and an ultrasonic cleaning method of irradiating the object with ultrasonic waves during immersion. The stripper composition of the present disclosure can be used for cleaning as is without dilution. Examples of objects to be cleaned include the objects to be cleaned described below. The immersion time is, for example, from 1 minute to 10 minutes, and furthermore from 3 minutes to 6 minutes. The spray time is, for example, from 1 minute to 10 minutes, and furthermore from 3 minutes to 6 minutes.

[0059] In the cleaning method of the present disclosure, ultrasonic waves are preferably applied when the stripper composition of the present disclosure comes into contact with the object to be cleaned, since the stripper composition of the present disclosure can easily exert its stripping and cleaning power, and the ultrasonic waves are more preferably relatively high frequency. From the same viewpoint, the ultrasonic irradiation conditions are, for example, preferably 26 to 72 kHz and 80 to 1500 W, and more preferably 36 to 72 kHz and 80 to 1500 W.

[0060] In the cleaning method of the present disclosure, the temperature of the stripper composition is preferably 40°C or higher, more preferably 50°C or higher, from the viewpoint of making it easier for the stripper composition of the present disclosure to exert its stripping and cleaning power, and is preferably 70°C or lower, more preferably 60°C or lower, from the viewpoint of reducing the effect on the organic resin-containing substrate.

[0061] In one or more embodiments of the cleaning method of the present disclosure, a post-cleaning may be performed on the substrate (object to be cleaned) after the object to be cleaned has been contacted with the stripper composition of the present disclosure to strip the resin mask. That is, the cleaning method of the present disclosure may further include cleaning the substrate after the stripping. In one or more embodiments, the post-cleaning includes contacting the substrate after the stripping with a cleaning agent. Examples of cleaning methods for post-cleaning include immersion cleaning, ultrasonic cleaning, vibration cleaning, and spray cleaning. The post-washing time is, for example, from 1 second to 60 seconds, and more preferably from 20 seconds to 30 seconds. The temperature of the detergent used in the post-washing is, for example, 20°C or higher and 40°C or lower, and more preferably 25°C or higher and 35°C or lower.

[0062] In one or more embodiments, the cleaning method of the present disclosure further comprises rinsing with water and drying after contacting the object to be cleaned with the stripper composition of the present disclosure (after stripping) or after post-cleaning. The rinsing method may include, for example, rinsing with running water, and the drying method may include, for example, air blow drying. In one or more embodiments, the cleaning method of the present disclosure can include rinsing with water after contacting the object to be cleaned with the stripper composition of the present disclosure (after stripping) or after post-cleaning.

[0063] The post-washing is preferably an acid wash. Examples of the wash agent used for the acid wash include sulfuric acid, nitric acid, and aqueous solutions of these diluted with water.

[0064] [substrate] In one aspect, the present disclosure relates to a substrate (hereinafter also referred to as "substrate of the present disclosure") manufactured using the cleaning method of the present disclosure. The substrate of the present disclosure enables the manufacture of electronic components described below, and in one or more embodiments, enables the manufacture of highly reliable electronic components.

[0065] [Electronic component manufacturing method] In one aspect, the present disclosure relates to a method for manufacturing an electronic component (hereinafter also referred to as "the method for manufacturing an electronic component of the present disclosure"), which includes the cleaning method of the present disclosure. In one or more embodiments, the method for manufacturing an electronic component of the present disclosure is a method for manufacturing an electronic component, which includes a step (hereinafter also referred to as "cleaning step") of cleaning a substrate (object to be cleaned) having a copper-containing metal layer and a resin mask on its surface using the cleaning method of the present disclosure. Examples of the cleaning method in the cleaning step include methods similar to the cleaning method of the present disclosure described above. Examples of the object to be cleaned include the objects to be cleaned described above. In one or more embodiments, the method for manufacturing an electronic component of the present disclosure may include, before the cleaning step, a step of performing at least one of soldering using a resin mask and plating on at least one electronic component selected from a printed circuit board, a wafer, and a metal plate. In one or more embodiments, the method for manufacturing an electronic component according to the present disclosure may include, after the cleaning step, a step of etching the copper-containing metal layer. According to the method for producing electronic components of the present disclosure, in one or more embodiments, by using the cleaning method of the present disclosure, a substrate can be obtained that can reduce residues during cleaning after peeling off the resin mask (improving low residue during post-cleaning), thereby enabling the production of highly reliable electronic components. Furthermore, in one or more embodiments, when peeling off the resin mask from a substrate having a copper-containing metal layer and a resin mask on its surface, the resin mask can be efficiently removed (peeled off) while suppressing copper corrosion and discoloration, thereby enabling the production of more reliable electronic components. Furthermore, by using the cleaning method of the present disclosure, the resin mask attached to the electronic component can be easily removed, thereby shortening the cleaning time and improving the production efficiency of electronic components.

[0066] [kit] In one aspect, the present disclosure relates to a kit (hereinafter also referred to as the "kit of the present disclosure") for use in either the cleaning method of the present disclosure or the method for producing an electronic component of the present disclosure. In one or more embodiments, the kit of the present disclosure is a kit for producing the stripper composition of the present disclosure. The kit of the present disclosure can provide a resin mask stripper composition that can efficiently remove (stripping) a resin mask while reducing residues in cleaning after stripping the resin mask (improving low residue levels in post-cleaning). One embodiment of the kit of the present disclosure is a kit (two-component stripper composition) that contains a first liquid and a second liquid in a mutually unmixed state, and in which components A, B, C, D, and E are each contained in either or both of the first liquid and the second liquid, and the first liquid and the second liquid are mixed upon use. Each of the first liquid and the second liquid may contain the above-mentioned optional components (other components) as necessary. [Example]

[0067] The present disclosure will be specifically described below using examples, but the present disclosure is not limited to these examples in any way.

[0068] 1. Preparation of Stripping Compositions of Examples 1 to 8 and Comparative Examples 1 to 3 The components shown in Table 1 were blended in the amounts (mass %, active ingredient) shown in Table 1 and mixed by stirring to prepare the release agent compositions of Examples 1 to 8 and Comparative Examples 1 to 3.

[0069] The following materials were used to prepare each stripping composition. (Component A) TMAH: Tetramethylammonium hydroxide [Showa Denko K.K., concentration 25%] KOH: Potassium hydroxide [Kanto Chemical Co., Ltd., concentration 48%] (Component B) MEA: Monoethanolamine [manufactured by Nippon Shokubai Co., Ltd.] (Component C) BI: Benzimidazole [Tokyo Chemical Industry Co., Ltd.] DMBI: 5,6-dimethylbenzimidazole [Tokyo Chemical Industry Co., Ltd.] TTA: Tolyltriazole [Fujifilm Wako Pure Chemical Industries, Ltd.] (Component D) BDG: Butyl diglycol [Nihon Nyukazai Co., Ltd., diethylene glycol monobutyl ether] (Component E) Water [pure water of 1 μS / cm or less produced using the Organo Corporation G-10DSTSET water purification system]

[0070] [Method for measuring pH of stripping composition] The pH of the stripping composition at 25°C was measured using a pH meter (Toa Denpa Kogyo Co., Ltd., HM- The value was measured using a pH meter with a pH sensor (30G) and was measured by immersing the electrode of the pH meter in the stripping composition for 3 minutes. The latter number.

[0071] 2. Evaluation of the release agent compositions of Examples 1 to 8 and Comparative Examples 1 to 3 The following cleaning test was carried out using the following test pieces, and the prepared stripper compositions of Examples 1 to 8 and Comparative Examples 1 to 3 were evaluated for their resin mask removability and post-cleaning properties.

[0072] <Test piece> A test piece (50 mm x 50 mm) consisting of a solid substrate having a copper plating layer (thickness: 3 μm) on its surface was obtained by electroless plating on an insulating substrate. <Cleaning test> 2.5 L of each stripping composition was prepared and heated to 60°C. The composition was then circulated in a box-type spray washer equipped with a full-cone nozzle (J020, manufactured by Ikeuchi Co., Ltd.) and sprayed onto a copper-plated test piece for 4 minutes (pressure: 0.03 MPa). a, spray distance: 80 mm). Then, the test piece was washed with pure water in a washing bottle for 30 minutes. Rinse for 2 seconds and finally dry with nitrogen blow. Visual observation of the test pieces after the cleaning test confirmed that the resin mask removability was excellent for all of the stripper compositions of Examples 1 to 8 and Comparative Examples 1 to 3. Furthermore, no discoloration of copper was observed on the test pieces after the cleaning test using the stripper compositions of Examples 1 to 8, confirming that the stripper compositions of Examples 1 to 8 have a copper corrosion inhibitory effect.

[0073] [Evaluation of post-cleaning properties] After rinsing the test piece that had undergone the cleaning test in the cleaning bottle containing pure water for 30 seconds, 2.5 L of a 10% aqueous sulfuric acid solution (manufactured by Fujifilm Wako Pure Chemical Industries, Ltd.) at room temperature was used to fill the nozzle with a cone. The test piece was sprayed for 10 seconds (pressure: 0.03 MPa, spray distance: 80 mm) while circulating in a box-type spray washer equipped with a spray nozzle (J020, manufactured by Ikeuchi Co., Ltd.) (acid cleaning). Then, the test piece is rinsed again for 30 seconds in a washing bottle filled with pure water, and finally dried with nitrogen blow. The surface element concentration (N / Cu ratio) of the test piece after the cleaning test and acid cleaning was measured using an X-ray photoelectron analyzer (PHI Quantera SXM manufactured by ULVAC-PHI, Inc.). The post-cleanability was judged by comparing the surface element concentration (N / Cu ratio) of the treated test piece. If the N / Cu ratio is lower than that of the untreated test piece, the post-cleanability can be judged to be good. The results are shown in Table 1.

[0074] [Table 1]

[0075] As shown in Table 1, Examples 1 to 8, which used two types of azole compounds, were found to have superior post-cleaning properties compared to Comparative Examples 1 to 3, which used only one type of azole compound. [Industrial Applicability]

[0076] According to the present disclosure, a stripper composition and a substrate cleaning method can be provided that, when stripping a resin mask from a substrate having a copper-containing metal layer and a resin mask on its surface, can efficiently remove (stripping) the resin mask while reducing residues in cleaning after the resin mask is stripped (improving the ability to reduce residues in post-cleaning). Furthermore, by using the resin mask stripper composition of the present disclosure, it is possible to improve the performance and reliability of manufactured electronic components, thereby improving the productivity of semiconductor devices.

Claims

1. A resin mask remover composition comprising the following components A, B, C, D and E. Component A: Hydroxide Component B: Alkanolamine Component C: two or more azole compounds Component D: organic solvent Component E: Water

2. The resin mask remover composition according to claim 1 , wherein component C comprises at least one compound having an imidazole skeleton.

3. 2. The resin mask remover composition according to claim 1, wherein component C comprises two or more compounds having an imidazole skeleton.

4. The resin mask remover composition according to claim 1, wherein the content of component C is 0.05% by mass or more and 0.5% by mass or less.

5. The resin mask remover composition according to claim 1, wherein a mass ratio E / C of component E to component C is 100 or more and 3,000 or less.

6. 2. The resin mask remover composition according to claim 1, wherein the mass ratio B / C of component B to component C is 1 or more and 500 or less.

7. 2. The resin mask remover composition according to claim 1, wherein a mass ratio A / C of component A to component C is 10 or more and 200 or less.

8. 2. The resin mask remover composition according to claim 1, wherein when the two or more types of component C are designated as c1 and c2, the mass ratio c1 / c2 of c1 to c2 is 0.02 or more and 50 or less.

9. 2. The resin mask remover composition according to claim 1, wherein the mass ratio B / D of component B to component D is 0.1 or more and 10 or less.

10. The resin mask remover composition according to claim 1, wherein the content of component E is 60% by mass or more and 98% by mass or less.

11. The resin mask remover composition according to claim 1 , which has a pH of 10 or more.

12. A resin mask remover composition comprising the following components A, B, C, D and E: the mass ratio B / C of component B to component C is 1 or more and 500 or less; A resin mask remover composition, wherein the mass ratio E / C of component E to component C is 100 or more and 3,000 or less. Component A: Hydroxide Component B: Alkanolamine Component C: two or more azole compounds Component D: organic solvent Component E: Water

13. A method for cleaning a substrate, comprising stripping a resin mask from a substrate having a copper-containing metal layer and a resin mask on its surface, using the resin mask stripper composition according to any one of claims 1 to 12.

14. The method of claim 13 further comprising cleaning the substrate after said stripping.

15. A method for producing an electronic component, comprising the step of cleaning a substrate having a copper-containing metal layer and a resin mask on its surface, using the cleaning method according to claim 13.

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