Multiple pane and method for producing multiple pane

Abstract

To suppress impairment of sealing performance of double glazing when taking out wiring from the inside of the double glazing to the outside.SOLUTION: A multi-layered glass according to one aspect of the present disclosure includes a first glass plate 11, a second glass plate 12, a sealing material 14 disposed between the first and second glass plates 11 and 12 to form a hollow layer 19 between the first and second glass plates 11 and 12, a photovoltaic cell 31 provided in the hollow layer 19, and a conductive low-emissivity film 20 formed on a main surface of the first glass plate 11 on a side of the hollow layer 19. The low-emissivity film 20 includes first and second regions 21 _ 1 and 21 _ 2 that are formed on the edge side of the first glass plate 11 so as to be independent of the surrounding low-emissivity film 20 and that are disposed so as to extend from the inside of the hollow layer 19 to the outside via the sealing material 14. Each of the first and second regions 21 _ 1 and 21 _ 2, which are parts of the low-emissivity film 20, is configured to function as an extraction electrode of the photovoltaic cell 31.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present disclosure relates to insulating glazing and methods for manufacturing insulating glazing. [Background technology]

[0002] Double glazing has been widely used in buildings and the like for purposes such as improving thermal insulation. In recent years, the use of double glazing equipped with photovoltaic cells has also been promoted in order to utilize natural energy. In double glazing equipped with photovoltaic cells, in order to extract the electricity generated by the photovoltaic cells to the outside, it is necessary to extract wiring connected to the photovoltaic cells from the inside of the double glazing to the outside.

[0003] Patent Document 1 discloses a technique related to double-glazing provided with photovoltaic cells. In the technique disclosed in Patent Document 1, wiring connected to the photovoltaic cells is taken out from between the glass panes and the spacer to the outside of the double-glazing. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Publication No. 11-54781 Summary of the Invention [Problem to be solved by the invention]

[0005] As described above, in the technology disclosed in Patent Document 1, the wiring connected to the photovoltaic cells is taken out from between the glass plate and the spacer (sealant) to the outside of the double-glazing. However, when the wiring is taken out from inside the double-glazing to the outside in this way, there is a risk that the sealing property of the double-glazing may be impaired.

[0006] In view of the above problems, the object of the present disclosure is to provide a double-glazed glass unit that can prevent the sealing property of the double-glazed glass unit from being impaired when wiring is taken out from the inside of the double-glazed glass unit to the outside, and a method for manufacturing the double-glazed glass unit. [Means for solving the problem]

[0007] A double-glazing unit and a method for manufacturing the double-glazing unit according to one aspect of the present disclosure are as follows.

[0008] [1] A first glass plate; a second glass plate disposed on the first glass plate with a hollow layer interposed therebetween; a sealant that is provided on peripheral portions of the first and second glass plates in a plan view and is disposed between the first and second glass plates to form the hollow layer between the first and second glass plates; a photovoltaic cell provided in the hollow layer; and a conductive low-emissivity film formed on a main surface of the first glass plate facing the hollow layer, the low-emissivity film is formed on an end side of the first glass plate so as to be independent from the surrounding low-emissivity film, and includes first and second regions arranged so as to extend from within the hollow layer to the outside via the sealing material; The first and second regions that are part of the low-emissivity film are each configured to function as extraction electrodes of the photovoltaic cell. Double-glazed glass.

[0009] [2] a positive electrode of the photovoltaic cell is connected to the first region via a first wiring in the hollow layer, a negative electrode of the photovoltaic cell is connected to the second region via a second wiring in the hollow layer; [1] The double-glazed glass described in [1].

[0010] [3] The double-glazed glass described in [1] or [2], wherein each of the first and second regions is rectangular with a first direction extending from the hollow layer to the outside as the short side direction and a second direction intersecting the first direction as the long side direction.

[0011] [4] The double-glazed glass according to any one of [1] to [3], wherein each of the first and second regions has a ratio (W / L) of the length W in the second direction to the length L in the first direction of 1 or more and 200 or less.

[0012] [5] The double glazing according to [4], wherein each of the first and second regions has a length L in the first direction of 5 mm or more and 20 mm or less.

[0013] [6] The double glazing according to [4], wherein each of the first and second regions has a length W in the first direction of 5 mm or more and 1000 mm or less.

[0014] [7] The double glazing according to any one of [1] to [6], wherein the surface resistance of the low-emissivity film is 10 (Ω / sq) or less.

[0015] [8] The double glazing according to any one of [1] to [7], wherein the low-emissivity film has a thickness of 0.05 μm or more and 50 μm or less.

[0016] [9] The double glazing according to any one of [1] to [8], wherein the width of the sealing material is 5 mm or more and 20 mm or less.

[0017]

[10] The double glazing according to any one of [1] to [9], wherein the low-emissivity film is made of silver, tin oxide, or ITO.

[0018]

[11] The double glazing according to any one of [1] to

[10] , wherein the photovoltaic cell is a perovskite photovoltaic cell.

[0019]

[12] forming a conductive low-emissivity film on a main surface of the first glass plate on which a hollow layer is to be formed; removing a portion of the low-emissivity film on the edge side of the first glass plate to form first and second regions that are independent from the surrounding low-emissivity film; a step of arranging a photovoltaic cell at a position where the hollow layer is to be formed, and connecting a positive electrode of the photovoltaic cell to the first region on the hollow layer side via a first wiring, and connecting a negative electrode of the photovoltaic cell to the second region on the hollow layer side via a second wiring; forming a sealant on a peripheral edge of the first glass plate; and after forming the sealant, placing the second glass plate on the sealant so that the first glass plate and the second glass plate are positioned with the hollow layer between them; The first and second regions, which are part of the low-emissivity film, each function as an extraction electrode extending from within the hollow layer to the outside through the sealing material. A method for manufacturing double-glazed glass. [Effects of the Invention]

[0020] The present disclosure makes it possible to provide a double-glazing unit that can prevent the sealing properties of the double-glazing unit from being impaired when wiring is routed from the inside to the outside of the double-glazing unit, and a method for manufacturing the double-glazing unit. [Brief explanation of the drawings]

[0021] [Figure 1] 1 is a plan view illustrating a double glazing unit according to an embodiment of the present invention; [Figure 2] FIG. 2 is a cross-sectional view taken along line II-II in FIG. [Figure 3] 1 is an enlarged plan view of the vicinity of a first region of a double glazing unit according to an embodiment. [Figure 4] 1 is a plan view illustrating a method for manufacturing insulating glass according to an embodiment. FIG. [Figure 5]1 is a plan view illustrating a method for manufacturing insulating glass according to an embodiment. FIG. [Figure 6] 1 is a cross-sectional view illustrating a method for manufacturing a double glazing unit according to an embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0022] Hereinafter, an embodiment will be described with reference to the drawings. Fig. 1 is a plan view illustrating a double glazing unit according to an embodiment of the present invention, and Fig. 2 is a cross-sectional view taken along line II-II in Fig. 1 .

[0023] As shown in Figures 1 and 2, the double-glazing glass 1 according to this embodiment comprises a first glass pane 11, a second glass pane 12, a sealant 14, a low-emissivity film 20, and a photovoltaic cell 31. The double-glazing glass 1 according to this embodiment can be suitably used as a building material such as window glass in buildings. The low-emissivity film 20 is also called a Low-E (Low Emissivity) film.

[0024] In this embodiment, the first glass plate 11 and the second glass plate 12 are arranged to face each other with a hollow layer 19 (see FIG. 2) interposed therebetween. The first glass plate 11 and the second glass plate 12 are plates of inorganic glass such as soda-lime glass, aluminosilicate glass, aluminoborosilicate glass, or alkali-free glass. The first glass plate 11 and the second glass plate 12 may be glass plates that have been subjected to a tempering process such as physical tempering or chemical tempering. Alternatively, the first glass plate 11 and the second glass plate 12 may be laminated glass formed by bonding a plurality of glass plates together.

[0025] As shown in Fig. 1, in this embodiment, a sealant 14 is provided on the peripheral edges of the first glass plate 11 and the second glass plate 12 in a plan view. As shown in Fig. 2, the sealant 14 is disposed between the first glass plate 11 and the second glass plate 12, and forms a hollow layer 19 between the first glass plate 11 and the second glass plate 12. In other words, the sealant 14 blocks the hollow layer 19 from the outside air.

[0026] In this embodiment, a thermoplastic resin is used for the sealant 14 in consideration of the fact that it can shorten the drying time after manufacturing the double-glazed glass 1. For example, a thermoplastic resin having a JIS A hardness of 10 to 90 at 25°C may be used for the sealant 14. Using a thermoplastic resin having a JIS A hardness of 10 to 90 can prevent glass from breaking during manufacturing, thereby improving productivity.

[0027] In this case, the thermoplastic resin may contain butyl rubber, crystalline polyolefin, a desiccant, and an inorganic filler. That is, it is preferable to use a resin material containing butyl rubber so as to obtain a sufficiently low moisture permeability for the sealant 14. Furthermore, it is preferable to add a material that contributes to high hardness, such as crystalline polyolefin, so as to obtain a sufficient shape retention for the sealant 14.

[0028] The proportion of butyl rubber to the total amount of butyl rubber and crystalline polyolefin in the sealing material 14 is preferably 50 to 98 mass %. If it is 50 mass % or more, the elastic modulus at room temperature can be increased. If it is 98 mass % or less, the melt viscosity at high temperatures can be reduced.

[0029] The proportion of crystalline polyolefin relative to the total amount of butyl rubber and crystalline polyolefin in the sealing material 14 is preferably 2 to 50 mass%, more preferably 5 to 40 mass%, even more preferably 7 to 20 mass%, and most preferably 8 to 15 mass%. If the proportion of crystalline polyolefin is 2 mass% or more, the hardness of the butyl rubber can be increased. If it is 50 mass% or less, the properties of the butyl rubber are easily exhibited.

[0030] The desiccant contained in the thermoplastic resin may be zeolite, alumina, silica gel, etc., with zeolite being preferred due to its high moisture absorption performance in low humidity regions. The inorganic filler contained in the thermoplastic resin may be calcium carbonate, talc, mica, carbon black, or other commonly used inorganic fillers, which may be used alone or in combination of two or more. In this case, the proportion of the inorganic filler per 100 parts by weight of the total of the butyl rubber and the crystalline polyolefin is preferably 200 parts by mass or less.

[0031] In this embodiment, adhesive members (not shown) may be provided between the first glass plate 11 and the sealant 14, and between the second glass plate 12 and the sealant 14. By providing the adhesive members in this manner, the first and second glass plates 11, 12 and the sealant 14 can be firmly bonded together. The adhesive member is not particularly limited as long as it is a glass / resin adhesive. For example, a urethane adhesive, a polyester adhesive, an epoxy adhesive, an α-cyanoacrylate adhesive, an acrylic adhesive, or the like containing a compound having a hydrolyzable silyl group can be used. In this embodiment, the adhesive members may be omitted if the adhesive strength between the first glass plate 11, the second glass plate 12, and the sealant 14 is sufficient.

[0032] As shown in FIGS. 1 and 2, the photovoltaic cells 31 are provided in the hollow layer 19. For example, in the configuration example shown in FIG. 2, the photovoltaic cells 31 are provided on the main surface of the first glass plate 11 (the surface of the low-emissivity film 20). The photovoltaic cells 31 can be configured using photovoltaic cells of silicon-based single crystal type, silicon-based polycrystalline type, amorphous silicon type, thin-film silicon type, CIGS type, organic thin-film type, dye-sensitized type, perovskite type, or the like. The photovoltaic cells 31 may be configured using a plurality of photovoltaic cells. Furthermore, for example, monofacial photovoltaic cells may be used as the photovoltaic cells 31. In this case, the photovoltaic cells 31 are arranged so that their light-receiving surfaces face outward. For example, when the first glass plate 11 is arranged outdoors and the second glass plate 12 is arranged indoors, the photovoltaic cells 31 are arranged so that their light-receiving surfaces face the first glass plate 11. Furthermore, bifacial photovoltaic cells may be used as the photovoltaic cells 31.

[0033] For example, if the photovoltaic cells 31 are perovskite-type photovoltaic cells or thin-film silicon-type photovoltaic cells, that is, if the photovoltaic cells 31 are composed of a thin film, the photovoltaic cells 31 may be formed directly on the surface of at least one of the first glass plate 11 and the second glass plate 12. For example, an insulating film may be formed on the low-emissivity film 20, and then the photovoltaic cells 31 may be formed on top of that. The double glazing 1 according to this embodiment maintains the sealing properties of the double glazing 1, and therefore has the effect of preventing moisture from penetrating into the double glazing 1. Therefore, when using perovskite-type photovoltaic cells 31, which are particularly susceptible to the effects of moisture, deterioration of the photovoltaic cells 31 can be effectively prevented.

[0034] As shown in Figures 1 and 2, in this embodiment, a low-emissivity film 20 is formed on the main surface of the first glass plate 11 on the hollow layer 19 side. The low-emissivity film 20 has the function of reflecting light in the near-infrared to infrared ranges, and therefore can suppress a rise in temperature inside the room due to sunlight. It also has the function of blocking the transfer of heat from inside the room to outside, and therefore has a heat-insulating effect. The low-emissivity film 20 is made of a conductive material. Specifically, the low-emissivity film 20 can be made using a metal material such as silver, copper, or aluminum, or a conductive oxide such as tin oxide, ITO (Indium Tin Oxide), zinc oxide, or aluminum oxide.

[0035] In the present embodiment, the low-emissivity film 20 includes a first region 21_1 and a second region 21_2. The first region 21_1 and the second region 21_2 are formed on the edge side of the first glass plate 11 so as to be independent from the surrounding low-emissivity film 20, and are arranged so as to extend from within the hollow layer 19 to the outside via the sealing material 14.

[0036] Specifically, as shown in FIG. 1 , a portion of the low-emissivity film 20 is removed at the end side of the first glass plate 11 to form a cutout portion 22_1, and this cutout portion 22_1 separates the first region 21_1 from the main body of the low-emissivity film 20. In other words, the first region 21_1 is separated from the main body of the low-emissivity film 20 by the cutout portion 22_1, and is therefore electrically insulated from the main body of the low-emissivity film 20. Similarly, a portion of the low-emissivity film 20 is removed at the end side of the first glass plate 11 to form a cutout portion 22_2, and this cutout portion 22_2 separates the second region 21_2 from the main body of the low-emissivity film 20. In other words, the second region 21_2 is separated from the main body of the low-emissivity film 20 by the cutout portion 22_2, and is therefore electrically insulated from the main body of the low-emissivity film 20.

[0037] In this embodiment, the first region 21_1 and the second region 21_2, which are parts of the low-emissivity film 20, are configured to function as extraction electrodes of the photovoltaic cells 31, respectively. That is, the positive electrode of the photovoltaic cells 31 is connected to the first region 21_1 via the first wiring 32_1 in the hollow layer 19. Also, the negative electrode of the photovoltaic cells 31 is connected to the second region 21_2 via the second wiring 32_2 in the hollow layer 19. Therefore, the positive electrode of the photovoltaic cells 31 is extracted to the outside via the first wiring 32_1 and the first region 21_1. Similarly, the negative electrode of the photovoltaic cells 31 is extracted to the outside via the second wiring 32_2 and the second region 21_2. Note that the positive electrode and the negative electrode of the photovoltaic cells 31 may be reversed. The first wiring 32_1 and the second wiring 32_2 may be made of, for example, a metal material. For example, the first wiring 32_1 and the second wiring 32_2 may be made of, for example, copper, aluminum, or the like.

[0038] As described above, in this embodiment, the first region 21_1 and the second region 21_2 are formed in part of the low-emissivity film 20 formed on the main surface of the first glass plate 11 facing the hollow layer 19. The first region 21_1 and the second region 21_2 are arranged to extend from within the hollow layer 19 to the outside via the sealing material 14, and are configured to function as extraction electrodes for the photovoltaic cells 31. This makes it possible to prevent the sealing properties of the double glazing 1 from being impaired when wiring is taken out from the inside (hollow layer 19) of the double glazing 1 to the outside.

[0039] That is, because the low-emissivity film 20 is thinner than commonly used wiring, it is possible to reduce the step formed by the surface (cutout portion 22_1) of the first glass plate 11, the low-emissivity film 20, the first region 21_1, and the second region 21_2. As a result, when the sealant 14 is formed on these, it is possible to prevent gaps from being formed between the surface (cutout portion 22_1) of the first glass plate 11, the low-emissivity film 20, the first region 21_1, and the second region 21_2 and the sealant 14. This prevents the sealing ability of the double glazing 1 from being impaired when wiring is routed from the inside (hollow layer 19) of the double glazing 1 to the outside.

[0040] Fig. 3 is an enlarged plan view of the vicinity of the first region 21_1 of the double glazing according to the embodiment. As shown in Fig. 3, in the present embodiment, the first region 21_1 may have a rectangular shape with a first direction (vertical direction in the plane of the paper) extending from the hollow layer 19 to the outside as the short side direction and a second direction (horizontal direction in the plane of the paper) intersecting the first direction as the long side direction. The second region 21_2 can also be configured in the same way as the first region 21_1 (the same applies below).

[0041] In this case, if the vertical length of the rectangular first region 21_1 is L and the horizontal length is W, the ratio (W / L) of the horizontal length W to the vertical length L is preferably 1 to 200, more preferably 3 to 200, and even more preferably 5 to 200. By setting the ratio (W / L) of the horizontal length W to the vertical length L of the first region 21_1 within this range, the resistance value of the first region 21_1 in the vertical direction (the direction in which the length L extends) can be reduced.

[0042] That is, the low-emissivity film 20 is thinner than commonly used wiring (electrode film). For this reason, when the low-emissivity film 20 is used as wiring (electrode film), the resistance value may become high. In the present embodiment, by setting the ratio (W / L) of the horizontal length W to the vertical length L of the first region 21_1 within the above-mentioned range, the cross-sectional area perpendicular to the vertical direction of the first region 21_1 can be increased, and the resistance value of the first region 21_1 in the vertical direction (the direction in which the length L extends) can be reduced.

[0043] For example, the length L of the first region 21_1 in the vertical direction is preferably 5 mm to 20 mm, more preferably 5 mm to 15 mm, and even more preferably 5 mm to 12 mm. The length W of the first region 21_1 in the horizontal direction is preferably 5 mm to 1000 mm, more preferably 30 mm to 1000 mm, and even more preferably 60 mm to 1000 mm.

[0044] Furthermore, the thickness of the low-emissivity film 20 (first region 21_1 and second region 21_2) is preferably 0.05 μm or more and 50 μm or less, more preferably 0.1 μm or more and 10 μm or less, and even more preferably 0.1 μm or more and 1 μm or less. Furthermore, the sheet resistance of the low-emissivity film 20 (first region 21_1 and second region 21_2) is preferably 10 (Ω / sq) or less, more preferably 6 (Ω / sq) or less, and even more preferably 3 (Ω / sq) or less. In this embodiment, by setting the thickness and sheet resistance of the low-emissivity film 20 (first region 21_1 and second region 21_2) within the above-mentioned ranges, the resistance value in the longitudinal direction (direction in which the length L extends) of the first region 21_1 and the second region 21_2 can be reduced.

[0045] The surface resistance of the low-emissivity film 20 is calculated using the following formula (1). Surface resistance value (Ω / sq) = resistivity (Ω cm) / thickness (cm) Formula (1)

[0046] In this embodiment, as described above, the first region 21_1 and the second region 21_2 are formed by removing a portion of the low-emissivity film 20 to form the cutout portions 22_1 and 22_2, respectively. Therefore, the low-emissivity film 20, the first region 21_1, and the second region 21_2 are the same film, and the thickness (film thickness) and surface resistance of these regions are basically approximately the same values.

[0047] For example, the thinner the thickness of the low-emissivity film 20, the smaller the steps on the surface of the first glass plate 11, thereby improving the sealing performance of the double glazing 1. However, when the thickness of the low-emissivity film 20 is reduced, the surface resistance of the low-emissivity film 20 increases. In this case, the resistance value in the vertical direction (the direction in which the length L extends) of the first region 21_1 and the second region 21_2 can be set low by increasing the ratio (W / L) of the horizontal length W to the vertical length L of the first region 21_1 and the second region 21_2 (i.e., by increasing W).

[0048] In the present embodiment, the width S of the sealing material 14 (see FIG. 3) is preferably 5 mm to 20 mm, more preferably 5 mm to 12 mm, and even more preferably 5 mm to 7 mm. When the width S of the sealing material 14 is set within this range, the length L of the first region 21_1 in the vertical direction can be shortened while ensuring a connection area between the first wiring 32_1 and the first region 21_1. Therefore, the resistance value of the first region 21_1 in the vertical direction can be reduced.

[0049] In the above description, a configuration example has been shown in which the low-emissivity film 20 (first region 21_1 and second region 21_2) is formed on the main surface of the first glass plate 11 facing the hollow layer 19. However, in the present embodiment, the low-emissivity film 20 (first region 21_1 and second region 21_2) may be formed on the main surface of the second glass plate 12 facing the hollow layer 19, or the low-emissivity film 20 (first region 21_1 and second region 21_2) may be formed on both the main surface of the first glass plate 11 facing the hollow layer 19 and the main surface of the second glass plate 12 facing the hollow layer 19. When the low-emissivity film 20 (first region 21_1 and second region 21_2) is formed on both the first glass plate 11 and the second glass plate 12, the number of extraction electrodes of the photovoltaic cells 31 can be increased, and the total resistance value of the extraction electrodes can be reduced.

[0050] In the present embodiment, functional films may be further formed on the main surfaces of the first glass plate 11 and the second glass plate 12. Examples of functional films include an anti-fogging film, an anti-fouling film, and a water-repellent film.

[0051] Next, a method for manufacturing double glazing according to this embodiment will be described. Figures 4 and 5 are cross-sectional views illustrating the method for manufacturing double glazing according to this embodiment. Figure 6 is a plan view illustrating the method for manufacturing double glazing according to this embodiment. Figures 4 and 5 correspond to the cross-sectional views taken along line II-II in Figure 1.

[0052] When manufacturing double-glazing glass according to this embodiment, first, a first glass sheet 11 is prepared as shown in the upper diagram of Fig. 4. Then, as shown in the center diagram of Fig. 4 and the left diagram of Fig. 6, a low-emissivity film 20 is formed on the main surface (upper surface) of the first glass sheet 11 on the side where the hollow layer 19 is to be formed. The above-mentioned materials can be used for the low-emissivity film 20. For example, the low-emissivity film 20 can be formed using a film-forming device such as a sputtering device.

[0053] Next, as shown in the lower diagram of Fig. 4 and the right diagram of Fig. 6, a first region 21_1 and a second region 21_2 are formed on the edge side of the first glass plate 11. Specifically, as shown in the right diagram of Fig. 6, the first region 21_1 and the second region 21_2 are formed by removing parts of the low-emissivity film 20 to form cutout portions 22_1 and 22_2, respectively. When removing parts of the low-emissivity film 20, for example, a laser is used.

[0054] Next, as shown in the upper diagram of Fig. 5, a photovoltaic cell 31 is placed in a position that will become the hollow layer 19 after the double glazing is formed. The positive electrode of the photovoltaic cell 31 is connected to a first region 21_1 on the hollow layer 19 side via a first wiring 32_1. Similarly, the negative electrode of the photovoltaic cell 31 is connected to a second region 21_2 on the hollow layer 19 side via a second wiring 32_2.

[0055] Next, as shown in the center diagram of FIG. 5, a sealant 14 is formed on the peripheral portion of the first glass plate 11 (see FIG. 1). Specifically, the sealant 14 (for example, a molten thermoplastic resin) is applied to the peripheral portion of the main surface of the first glass plate 11 using an application means. The above-mentioned materials can be used for the sealant 14. At this time, the sealant 14 may be formed so that the first wiring 32_1 and the second wiring 32_2 are covered with the sealant 14. When the first wiring 32_1 and the second wiring 32_2 are configured to be covered with the sealant 14 in this way, the first wiring 32_1 and the second wiring 32_2 can be firmly fixed to the first region 21_1 and the second region 21_2, respectively.

[0056] After forming the sealant 14, the second glass plate 12 is placed on top of the sealant 14 so that the first glass plate 11 and the second glass plate 12 are arranged with a hollow layer 19 between them, as shown in the lower diagram of Figure 5.

[0057] The double-glazing glass according to this embodiment can be manufactured using the manufacturing method described above. Even when the double-glazing glass manufacturing method according to this embodiment is used, the first region 21_1 and the second region 21_2, which are part of the low-emissivity film 20, each function as an extraction electrode extending from inside the hollow layer 19 to the outside via the sealing material 14. This makes it possible to prevent the sealing properties of the double-glazing glass 1 from being impaired when wiring is drawn from the inside (hollow layer 19) of the double-glazing glass 1 to the outside. [Example]

[0058] Next, examples will be described. The following samples were produced to examine the conditions for using the first region 21_1 and the second region 21_2, which are parts of the low emissivity film 20, as extraction electrodes.

[0059] For the samples according to Examples 1 to 7, double-glazing units having the first region 21_1 and the second region 21_2 as extraction electrodes were fabricated using the double-glazing manufacturing method described above. Ag was used as the material for the low-emissivity film 20 (Low-E film) formed on the first glass plate 11. The low-emissivity film 20 was fabricated using a sputtering device. The thickness, length L, length W, and W / L ratio of the low-emissivity film 20 (Low-E film) for each sample were set to the values ​​shown in Table 1. Table 1 also shows the sheet resistance, resistance value, and rate of decrease in short-circuit current Isc for each sample. The short-circuit current Isc is the short-circuit current when the first region 21_1 and the second region 21_2 are short-circuited outside the double-glazing unit 1. A higher rate of decrease in short-circuit current Isc indicates a higher internal resistance of the photovoltaic cell 31. The resistance value was calculated using the following formula (2): Resistance (Ω) = Length L (m) / Width W (m) × Surface Resistance (Ω / sq) Equation (2)

[0060] The internal dew point temperature and FF reduction rate of each sample were also measured. The internal dew point temperature was measured using a chilled mirror method. The internal dew point temperature was rated as best (A) when it was -40°C or lower, good (B) when it was higher than -40°C and lower than -35°C, fair (C) when it was higher than -35°C and lower than -30°C, and poor (NG) when it was higher than -30°C.

[0061] The FF reduction rate is the reduction rate of a solar cell due to a faulty FF mode. The FF reduction rate was measured using a solar simulator. The FF reduction rate was rated as best (A) when it was within 30%, good (B) when it was between 30% and 40%, acceptable (C) when it was between 40% and 50%, and unacceptable (NG) when it was above 50%.

[0062] The Isc reduction rate was determined by short-circuiting the first region 21_1 and the second region 21_2 outside the double glazing 1 and measuring the short-circuit current in this state. The Isc reduction rate was rated as best (A) when it was within 20%, good (B) when it was between 20% and 40%, fair (C) when it was between 40% and 60%, and poor (NG) when it was greater than 60%.

[0063] Furthermore, a sample (Example 8) was produced as a comparative example, using busbar wiring for the extraction electrode. The sample of Example 8 was produced using the same method as the samples of Examples 1 to 7, except that busbar wiring was used for the extraction electrode. The measurement results are shown in Table 1. In Table 1, Examples 1 to 6 are working examples, and Examples 7 and 8 are comparative examples.

[0064] [Table 1]

[0065] As shown in Table 1, in Examples 1 to 3 and 7, the thickness of the low-emissivity film 20 was 0.2 μm and the surface resistance was 2 (Ω / sq). In this case, the short-circuit current Isc was evaluated as A in Example 1 where the W / L ratio was 17, Example 2 where the W / L ratio was 15, and Example 3 where the W / L ratio was 5. On the other hand, the short-circuit current Isc was evaluated as NG in Example 7 where the W / L ratio was 0.5. In other words, it is thought that the resistance value in the vertical direction of the page (see FIGS. 1 and 3) of the first region 21_1 and the second region 21_2 was high because the W / L ratio was small at 0.5 in Example 7.

[0066] In addition, in Examples 4 to 6, the thickness of the low emissivity film 20 was 0.1 μm and the surface resistance was 6 (Ω / sq). In this case, the short-circuit current Isc was evaluated as A in Example 4 where the W / L ratio was 17 and in Example 6 where the W / L ratio was 15.

[0067] In addition, in Example 8, which used busbar wiring, the resistance was low and the short-circuit current Isc was rated as good at A, but the internal dew point temperature and FF reduction rate were NG. Therefore, it can be said that when busbar wiring was used, the sealing of the double-glazed glass was insufficient.

[0068] The present invention has been described above in accordance with the above-mentioned embodiment, but the present invention is not limited to the configuration of the above-mentioned embodiment, and naturally includes various modifications, alterations, and combinations that a person skilled in the art can make within the scope of the invention as defined in the claims of this application. [Explanation of symbols]

[0069] 1. Double glazing 11 First glass plate 12 Second glass plate 14 Sealant 19 Hollow layer 20 Low emissivity film 21_1 1st area 21_2 2nd area 22_1, 22_2 Notch 31 Photovoltaic cells 32_1 1st wiring 32_2 2nd wiring

Claims

1. A first glass plate; a second glass plate disposed on the first glass plate with a hollow layer interposed therebetween; a sealant provided on peripheral portions of the first and second glass plates in a plan view and disposed between the first and second glass plates to form the hollow layer between the first and second glass plates; a photovoltaic cell provided in the hollow layer; and a conductive low-emissivity film formed on a main surface of the first glass plate facing the hollow layer, the low-emissivity film is formed on an end side of the first glass plate so as to be independent from the surrounding low-emissivity film, and includes first and second regions arranged so as to extend from within the hollow layer to the outside via the sealing material, The first and second regions that are part of the low-emissivity film are each configured to function as extraction electrodes of the photovoltaic cell. Double-glazed glass.

2. a positive electrode of the solar power generation cell is connected to the first region via a first wiring in the hollow layer, a negative electrode of the solar power generation cell is connected to the second region via a second wiring in the hollow layer; The double glazing according to claim 1 .

3. 3. The double-glazed glass according to claim 1, wherein each of the first and second regions is rectangular in shape with a first direction extending from the hollow layer to the outside as its short side and a second direction intersecting the first direction as its long side.

4. The double-glazing glass according to claim 3 , wherein each of the first and second regions has a ratio (W / L) of a length W in the second direction to a length L in the first direction of 1 or more and 200 or less.

5. The double glazing according to claim 4 , wherein each of the first and second regions has a length L in the first direction of 5 mm or more and 20 mm or less.

6. The double-glazing glass according to claim 4 , wherein each of the first and second regions has a length W in the first direction of 5 mm or more and 1000 mm or less.

7. The double glazing according to claim 1 or 2, wherein the surface resistance of the low-emissivity film is 10 (Ω / sq) or less.

8. The double glazing according to claim 1 or 2, wherein the low-emissivity film has a thickness of 0.05 μm or more and 50 μm or less.

9. The double glazing according to claim 1 or 2, wherein the width of the sealant is 5 mm or more and 20 mm or less.

10. The double glazing according to claim 1 or 2, wherein the low-emissivity film is made of silver, tin oxide, or ITO.

11. The insulating glass according to claim 1 or 2, wherein the photovoltaic cell is a perovskite photovoltaic cell.

12. forming a conductive low-emissivity film on a main surface of the first glass plate on which a hollow layer is to be formed; removing a portion of the low-emissivity film on an end side of the first glass plate to form first and second regions that are independent from the surrounding low-emissivity film; a step of arranging a photovoltaic cell at a position where the hollow layer is to be formed, and connecting a positive electrode of the photovoltaic cell to the first region on the hollow layer side via a first wiring, and connecting a negative electrode of the photovoltaic cell to the second region on the hollow layer side via a second wiring; forming a sealant on a peripheral edge of the first glass plate; and after forming the sealant, placing the second glass plate on the sealant so that the first glass plate and the second glass plate are positioned with the hollow layer between them; the first and second regions that are part of the low-emissivity film each function as an extraction electrode that extends from within the hollow layer to the outside through the sealing material; A method for manufacturing double-glazed glass.

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