Film forming apparatus, film forming method, and electronic device manufacturing method

Abstract

To provide a film deposition apparatus capable of improving film deposition accuracy, a film deposition method, and a method for manufacturing an electronic device.SOLUTION: A film forming apparatus 10 includes an electrostatic attraction unit 300 that electrostatically attracts a substrate S, and an evaporation source 210 that is configured to be relatively movable with respect to the electrostatic attraction unit 300 and forms a thin film on the substrate S through a mask M aligned with the substrate S, in which the electrostatic attraction unit 300 is configured to independently control a temperature in each of a plurality of regions divided with respect to a relative movement direction with respect to the evaporation source 210, and the temperature control of each region is individually performed according to a positional relationship with the evaporation source 210.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a film forming apparatus, a film forming method, and a method for manufacturing an electronic device. [Background technology]

[0002] In a film formation apparatus for forming a thin film on a substrate, a technique for forming a film while moving a film formation source is known. This technique allows for suitable thin film formation even on large-sized substrates. Another known technique for a film formation apparatus is for forming a thin film on a substrate while the substrate and electrostatic chuck are aligned. When this technique is applied to the above technique, the film formation source serves as a heat source, and therefore the substrate and electrostatic chuck tend to become hotter the closer they are to the film formation source, resulting in uneven temperatures of the substrate and electrostatic chuck depending on their positions. As a result, the degree of thermal expansion of the substrate and electrostatic chuck varies depending on their positions, which can lead to reduced positioning accuracy and reduced film formation accuracy. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 2023-112784 [Patent Document 2] Japanese Patent Application Publication No. 2019-099910 Summary of the Invention [Problem to be solved by the invention]

[0004] An object of the present invention is to provide a film formation apparatus, a film formation method, and a method for manufacturing an electronic device that can improve film formation accuracy. [Means for solving the problem]

[0005] The present invention employs the following means to solve the above problems.

[0006] That is, the film forming apparatus of the present invention is an electrostatic suction unit that electrostatically suctions the substrate; a film formation source configured to be movable relative to the electrostatic adsorption unit and configured to form a thin film on the substrate via a mask aligned with the substrate; A film forming apparatus comprising: The electrostatic suction unit is configured to be capable of independently controlling the temperature of each of a plurality of regions divided in the direction of movement relative to the film formation source, and the temperature of each region is controlled individually according to its positional relationship with the film formation source. [Effects of the Invention]

[0007] According to the present invention, the film formation accuracy can be improved. [Brief explanation of the drawings]

[0008] [Figure 1] 1 is a schematic configuration diagram of a film forming apparatus according to an embodiment of the present invention. [Figure 2] 1 is a schematic configuration diagram of a film forming apparatus according to an embodiment of the present invention. [Figure 3] FIG. 2 is an explanatory diagram of an electrostatic suction unit and an evaporation source according to an embodiment of the present invention. [Figure 4] FIG. 2 is a diagram showing the positional relationship between a heating layer and an evaporation source according to an embodiment of the present invention. [Figure 5] FIG. 2 is a diagram showing the positional relationship between a heating layer and an evaporation source according to an embodiment of the present invention. [Figure 6] FIG. 1 is an explanatory diagram of an organic EL display device. DETAILED DESCRIPTION OF THE INVENTION

[0009] The following describes in detail, by way of example, the mode for carrying out the present invention with reference to the drawings. However, the following examples merely exemplify preferred configurations of the present invention, and the scope of the present invention is not limited to these configurations. Furthermore, the hardware and software configurations, processing flows, manufacturing conditions, dimensions, materials, shapes, etc. of the device in the following description are not intended to limit the scope of the present invention unless otherwise specified.

[0010] The present invention can be applied to an apparatus for depositing various materials on the surface of a substrate to form a film, and is preferably applied to an apparatus for forming a thin film (material layer) of a desired pattern by vacuum deposition. The substrate material can be any material, such as glass, a polymeric film, or metal. For example, the substrate may be a glass substrate on which a film such as polyimide is laminated. Organic materials can also be suitably used as the deposition material. However, any material, such as metallic materials (metals, metal oxides, etc.), can also be used. Specifically, the technology of the present invention can be applied to apparatuses for manufacturing organic electronic devices (e.g., organic EL elements, thin-film solar cells), optical components, etc. Among these, an apparatus for manufacturing organic EL elements, in which an organic EL element is formed by evaporating a deposition material and depositing it on a substrate through a mask, is one preferred application example of the present invention.

[0011] (Example) 1 to 6, a film formation apparatus, a film formation method, and a manufacturing method for an electronic device according to an embodiment of the present invention will be described. FIG. 1 is a schematic diagram of a film formation apparatus according to an embodiment of the present invention, mainly illustrating the main internal components of the film formation apparatus. FIG. 2 is a schematic diagram of a film formation apparatus according to an embodiment of the present invention, illustrating the configuration related to an evaporation source as a film formation source provided inside the film formation apparatus. FIG. 3 is an explanatory diagram of an electrostatic adsorption unit and an evaporation source according to an embodiment of the present invention, showing a cross section of the electrostatic adsorption unit. FIG. 4 is a diagram illustrating the positional relationship between a heating layer and an evaporation source according to an embodiment of the present invention, showing the positional relationship between the heating layer viewed from above and the evaporation source located at its initial position. FIG. 5 is a diagram illustrating the positional relationship between a heating layer and an evaporation source according to an embodiment of the present invention, showing an example of the positional relationship between the heating layer and the evaporation source when the evaporation source is moving. FIG. 6 is an explanatory diagram of an organic EL display device. In the XYZ axes shown in FIGS. 1 to 5, the Z direction is parallel to the vertical direction, and the X and Y directions are perpendicular to each other and parallel to the horizontal plane.

[0012] <Film forming equipment> A film forming apparatus 10 according to this embodiment will be described with reference to FIGS. 1 and 2. The film forming apparatus 10 according to this embodiment is an evaporation apparatus that performs vacuum evaporation. The film forming apparatus 10 includes a chamber 110, a vacuum pump 120 for creating a vacuum (reduced pressure atmosphere) inside the chamber 110, and an evaporation source 210 disposed inside the chamber 110. The evaporation source 210 heats a film forming material to be evaporated onto a substrate S disposed inside the chamber 110, thereby evaporating or sublimating the material. The material evaporated or sublimated by the evaporation source 210 adheres to the substrate S, thereby forming a thin film on the substrate S.

[0013] The film forming apparatus 10 also includes an atmospheric box 220 for supplying electricity and a coolant to the evaporation source 210, and a first atmospheric arm 221 and a second atmospheric arm 222 that move in accordance with the movement of the atmospheric box 220. The atmospheric box 220 is hollow and communicates with the outside of the chamber 110 through the insides of the first atmospheric arm 221 and the second atmospheric arm 222. Therefore, the inside of the atmospheric box 220 is exposed to the atmosphere. By adopting such a configuration, wiring connected to a power source provided outside the chamber 110 and a cooling pipe connected to a coolant supply device provided outside the chamber 110 can be connected to the evaporation source 210.

[0014] The first atmospheric arm 221 and the second atmospheric arm 222 are provided to arrange wiring and cooling pipes inside the cavity of the moving atmospheric box 220. That is, the first atmospheric arm 221 and the second atmospheric arm 222 are hollow inside and configured to move in accordance with the movement of the atmospheric box 220. More specifically, one end of the second atmospheric arm 222 is configured to be rotatable with respect to the bottom plate of the chamber 110. One end of the first atmospheric arm 221 is rotatably supported with respect to the other end of the second atmospheric arm 222, and the other end is rotatably supported with respect to the atmospheric box 220.

[0015] The film forming apparatus 10 is also provided with a moving mechanism that moves the evaporation source 210. The moving mechanism according to this embodiment includes a pair of guide rails 232, a pair of gears 240 provided on both sides of a rotation shaft that penetrates the atmospheric box 220, and a drive source (not shown) such as a motor that rotates the rotation shaft. The pair of guide rails 232 are provided with racks that mesh with the pair of gears 240, respectively. With the above configuration, by rotating the rotation shaft with the drive source, the evaporation source 210 can be moved back and forth together with the atmospheric box 220 along the pair of guide rails 232.

[0016] As described above, the evaporation source 210 is configured to be guided by the pair of guide rails 232 and configured to move linearly back and forth in the Y direction. Then, by evaporating or sublimating the film forming material while moving the evaporation source 210 in the Y direction, a thin film can be formed on the substrate S. Note that film formation can be performed while the evaporation source 210 is moving in at least one of the forward and backward directions.

[0017] As described above, the movement mechanism in this embodiment employs a so-called rack and pinion mechanism. However, the movement mechanism for reciprocating the atmospheric box 220 and the evaporation source 210 is not limited to the rack and pinion mechanism, and various known techniques such as a ball screw mechanism may be employed.

[0018] The film forming apparatus 10 also includes a control unit C. The control unit C has functions such as alignment of the substrate S with the mask M, control of the evaporation source 210, control of the electrostatic adsorption unit 300, and control of film formation. The control unit C can be configured, for example, by a computer having a processor, memory, storage, I / O, etc. In this case, the functions of the control unit C are realized by the processor executing a program stored in the memory or storage. The computer may be a general-purpose personal computer, an embedded computer, or a PLC (Programmable Logic Controller). Alternatively, some or all of the functions of the control unit C may be configured using circuits such as ASICs or FPGAs. Furthermore, a control unit C may be installed for each film forming apparatus 10, or one control unit C may be configured to control multiple film forming apparatuses 10. The control unit C may be considered as a component of the film forming apparatus 10 or as an external component of the film forming apparatus 10.

[0019] <Alignment mechanism> Generally, a film forming apparatus is provided with an alignment mechanism for aligning a substrate and a mask. To align the substrate and the mask, a mechanism for moving at least one of the substrate and the mask in the X direction, the Y direction, and a direction around the Z axis is provided. In this embodiment, as an example, a configuration in which a mechanism for moving the substrate S in the X direction, the Y direction, and a direction around the Z axis is provided will be described.

[0020] The film forming apparatus 10 according to this embodiment includes an electrostatic suction unit 300 that electrostatically suctions the substrate S, and a moving mechanism 301 that can move the electrostatic suction unit 300 in the X direction, the Y direction, and the direction around the Z axis. The moving mechanism 301 may employ various known techniques, such as a mechanism configured with a motor and a ball screw, or a motor and a linear guide, etc. Further, the film forming apparatus 10 according to this embodiment includes a substrate moving mechanism 410 capable of moving the substrate S in the Z direction, and a mask moving mechanism 420 capable of moving the mask M in the Z direction.

[0021] With the above configuration, the substrate S is brought into contact with the electrostatic chuck unit 300 by the substrate moving mechanism 410, and while the electrostatic chuck unit 300 electrostatically chucks and holds the substrate S, the moving mechanism 301 can align the substrate S with the mask M. Note that, since known techniques can be used as appropriate for the alignment of the substrate S with the mask M, a detailed description thereof will be omitted. In this manner, an alignment step is performed in which the substrate S electrostatically chucked to the electrostatic chuck unit 300 is aligned with the mask M disposed on the film formation surface of the substrate S. Thereafter, the mask moving mechanism 420 moves the mask M in the Z direction, and while the substrate S and mask M are in contact with each other, a film formation step is performed in which a thin film is formed on the film formation surface of the substrate S by the evaporation source 210, which serves as a film formation source that is movable relatively to the electrostatic chuck unit 300. It is desirable to adopt a configuration in which a magnetic plate that can move in the Z direction is provided on the opposite side of the mask M across the substrate S, and after the substrate S and the mask M come into contact with each other, the magnetic plate is brought closer to magnetically attract the mask M, thereby performing film formation in a state in which the substrate S and the mask M are in close contact with each other. Such a magnetic plate can be arranged on the opposite side of the mask M via the electrostatic adsorption unit 300, for example.

[0022] Although the present embodiment has been described with reference to a configuration in which the substrate S is moved in the Z direction by the substrate moving mechanism 410, a configuration in which a mechanism for moving the substrate S in the Z direction is not provided can also be adopted by providing a mechanism for moving the electrostatic adsorption unit 300 in the Z direction. The same applies to the mask M. Furthermore, the present embodiment has been described with reference to a configuration in which a mechanism for moving the substrate S in the X direction, the Y direction, and the direction around the Z axis is provided. However, as described above, a configuration in which a mechanism for moving the mask M in the X direction, the Y direction, and the direction around the Z axis is provided can also be adopted, without providing a mechanism for moving the substrate S in each direction. Furthermore, a configuration in which alignment is performed by providing mechanisms for moving both the substrate S and the mask M in the X direction, the Y direction, and the direction around the Z axis can also be adopted. In this case, a configuration in which rough alignment is performed by one mechanism, and then fine alignment is performed by the other mechanism can be adopted.

[0023] <Evaporation source> The basic configuration of the evaporation source 210 is well known and will not be described in detail here. However, the evaporation source 210 includes a crucible that stores an evaporation material to be deposited on the substrate S, a heater that heats the crucible, and a case 211 that stores these components. In this embodiment, a plurality of nozzles 212 are provided above the case 211 for spraying the material evaporated or sublimated by heating the film-forming material. These nozzles 212 are configured to be spaced apart from one another in the X direction. That is, the nozzles 212 are spaced apart from one another in a direction intersecting (in this embodiment, perpendicular to) the movement direction (Y direction) of the evaporation source 210.

[0024] By performing film formation while moving the evaporation source 210 configured as described above in the Y direction, a thin film can be formed over the entire surface of the substrate S held by the stationary electrostatic adsorption unit 300. As described above, in this embodiment, a configuration is adopted in which the evaporation source 210 is moved while the electrostatic adsorption unit 300 is stationary in the film formation process, thereby moving the two relatively. However, a configuration can also be adopted in which the evaporation source is stationary while the electrostatic adsorption unit is moved, thereby moving the two relatively. In either case, it can be said that multiple nozzles that spray the film formation material are arranged at intervals in a direction intersecting the direction of relative movement between the evaporation source and the electrostatic adsorption unit.

[0025] <Electrostatic adsorption unit> The electrostatic suction unit 300 will be described with particular reference to Figures 3 and 4. The electrostatic suction unit 300 includes a flat base material 310, a flat electrostatic suction section 320 fixed to the base material 310, and a flat temperature adjustment section 330 fixed to the base material 310 and disposed on the opposite side of the electrostatic suction section 320 from the substrate S. Metal or ceramic can be suitably used as the material for the base material 310. Metal has the advantage of being easy to process. Ceramics also have the advantage of being effective in maintaining flatness.

[0026] The electrostatic attraction unit 320 may be a structure in which an electric circuit 321 such as a metal electrode is embedded in a substrate such as ceramic. In this case, the electrostatic attraction unit 320 may be attached to the substrate 310 with an adhesive. Alternatively, the electrostatic attraction unit 320 may be provided on the substrate 310 by thermal spraying. The electrostatic attraction unit 320 may be a Coulomb force type electrostatic chuck, a Johnsen-Rahbek force type electrostatic chuck, or a gradient force type electrostatic chuck.

[0027] The temperature adjustment unit 330 includes a cooling layer 331 having a flow path 331a through which a coolant flows, and a heating layer 332 having a heater circuit 332a, which is disposed closer to the substrate S than the cooling layer 331. The cooling layer 331 may be a plate-like member such as a metal plate having the flow path 331a formed therein. In this case, the cooling layer 331 may be bonded to the heating layer 332 with an adhesive. The heating layer 332 may be a film-like heater having a heater circuit 332a made of a metal foil such as SUS, nichrome, or Inconel attached to a resin film such as polyimide. This heating layer 332 may be bonded to the substrate 310. Alternatively, the heating layer 332 may be formed by thermal spraying the heater circuit 332a and insulating portions other than the heater circuit on the substrate 310.

[0028] In this embodiment, the temperature adjustment unit 330 is configured with a cooling layer 331 and a heating layer 332. However, a configuration in which a sheathed heater is provided inside a plate-shaped member having a flow path through which a cooling liquid flows can also be adopted. This allows both cooling and heating temperature control to be performed using a single plate-shaped member. The temperature adjustment unit 330 can also be configured with a Peltier element. In this case, a plate-shaped member having multiple Peltier elements can be used instead of the heating layer 332 in the above embodiment. Furthermore, a plate-shaped member having multiple Peltier elements can be used instead of the cooling layer 331. Furthermore, only a plate-shaped member having multiple Peltier elements can be used instead of the cooling layer 331 and the heating layer 332. A Peltier element is a plate-shaped element in which P-type and N-type semiconductors are alternately arranged. When a direct current is applied to a Peltier element, heat is transferred between both sides of the element, causing one side to generate heat and increase its temperature, while the other side absorbs heat and decreases its temperature. Heating and cooling can be achieved by switching the direction of the current input to this Peltier element.

[0029] The electrostatic chuck unit 300 according to this embodiment is configured to enable independent temperature control in each of multiple regions divided in the direction of relative movement (Y direction) with respect to the evaporation source 210 serving as a film formation source. In this embodiment, as shown in FIG. 4 , the first region R1, the second region R2, the third region R3, the fourth region R4, the fifth region R5, and the sixth region R6 are configured to enable independent temperature control. A heater circuit 332a is provided in each of these multiple regions, and the control unit C independently controls the temperature in each region. Even when a Peltier element is used, it goes without saying that the temperature can be independently controlled in each region. Furthermore, when a plate-like member having multiple Peltier elements is used instead of the cooling layer 331, it is possible to combine the temperature control in each region by the heater circuit 332a and the temperature control in each region by the Peltier elements.

[0030] In this embodiment, the cooling layer 331 is maintained at a constant temperature by controlling the temperature of the cooling liquid flowing through the flow path 331a of the cooling layer 331 to be constant. For example, the cooling layer 331 is maintained at an excessively high cooling temperature (for example, 15°C). In an area that is not significantly affected by the evaporation source 210, which serves as a heat source, the control unit C controls the heater circuit 332a to supply a constant current so that the surface temperature of the electrostatic attraction unit 320 reaches a predetermined temperature (for example, 23°C). In contrast, in an area that is heated by the evaporation source 210, which serves as a heat source, the control unit C controls the heater circuit 332a so that it is not energized or the amount of current supplied is reduced so that the surface temperature of the electrostatic attraction unit 320 remains at a predetermined temperature (for example, 23°C). In this way, the electrostatic chuck unit 300 is configured to be able to independently control the temperature of each of a plurality of regions divided in the direction of movement relative to the evaporation source 210, and is configured to individually control the temperature of each region depending on the positional relationship with the evaporation source 210 (corresponding to the distance between the evaporation source 210 and the substrate S). A more specific example of temperature control will be described below.

[0031] In this embodiment, as shown in FIG. 4, a heater circuit 332a is disposed in each of the first to sixth regions R1 to R6. This allows the controller C to independently control the temperature in each region. In this embodiment, three heater circuits 332a are disposed in each region along the X direction. This allows for temperature non-uniformity in the X direction to be suppressed by controlling the amount of current supplied to the three heater circuits 332a. Furthermore, the electrostatic chuck unit 300 according to this embodiment is provided with a temperature sensor TS in each region to enable feedback control, as described below. While FIG. 4 illustrates the positional relationship of the temperature sensor TS with respect to the heating layer 332, the temperature sensor TS does not necessarily need to be attached to the heating layer 332. It may be attached to the electrostatic chuck 320 or another member.

[0032] In this embodiment, control is performed by the control unit C to maintain a constant temperature across the entire surface of the electrostatic attraction unit 320. Specifically, control using only feedback control, control using only feedforward control, or control using a combination of feedback control and feedforward control may be employed. Below, a description will be given in order, particularly with reference to FIG. 5. When the film formation process begins, the evaporation source 210 moves in the Y direction from the initial position shown in FIG. 4 as indicated by the arrow in FIG. 5. FIG. 5 shows a state in which the evaporation source 210 is moving below the third region R3. In this state, the first region R1, the second region R2, and the fourth region R4 to the sixth region R6 are not significantly affected by the evaporation source 210, which serves as a heat source. However, in the third region R3, the evaporation source 210 heats the substrate S and mask M, raising their temperatures. Based on the above assumptions, each control will be described.

[0033] <<Feedback control>> While the evaporation source 210 is moving below the third region R3, the temperatures detected by the temperature sensors TS in other regions usually change little, so the controller C controls the amount of current supplied to the heater circuit 332a in regions other than the third region R3 to be constant. In contrast, the temperature detected by the temperature sensors TS in the third region R3 increases, so the controller C controls the heater circuit 332a in the third region R3 to either not supply current or to reduce the amount of current. As described above, the temperatures of multiple regions in the electrostatic chuck unit 300 are individually detected, and feedback control is performed based on the detected temperatures. This control keeps the temperature of the entire surface of the electrostatic chuck 320 constant, preventing the temperatures of the substrate S and mask M from becoming non-uniform depending on their position.

[0034] <<Feedforward control>> The position of the evaporation source 210 can be detected by providing a position sensor or by measuring the elapsed time after the start of film formation. The relationship between the position of the evaporation source 210 and the surface temperature of each region of the electrostatic adsorption unit 320 can be predicted by conducting experiments or other measurements in advance. Therefore, even without temperature detection using the temperature sensor TS, the temperature of the entire surface of the electrostatic adsorption unit 320 can be kept constant by performing feedforward control according to the position of the evaporation source 210, which moves relative to the electrostatic adsorption unit 300. In the example shown in FIG. 5 , the heater circuit 332a in the third region R3 is not energized or is controlled to have a reduced amount of power. Furthermore, since the fourth region R4 begins to be affected by the evaporation source 210, the amount of power supplied to the heater circuit 332a can be controlled to gradually decrease as the evaporation source 210 approaches.

[0035] <<Combination of feedback control and feedforward control>> It is also preferable to perform the above-mentioned feedback control while performing the above-mentioned feedforward control. In this case, even if the temperature cannot be kept constant due to some influence by the feedforward control alone, the temperature can be more accurately kept constant by combining the feedforward control with the feedback control.

[0036] <Electronic device manufacturing method> Next, an example of a method for manufacturing an electronic device using the film forming apparatus of this embodiment will be described. Below, the configuration of an organic EL display device will be shown as an example of the electronic device, and a method for manufacturing the organic EL display device will be illustrated.

[0037] First, the organic EL display device to be manufactured will be described. Figure 6(a) is an overall view of the organic EL display device 150, and Figure 6(b) shows the cross-sectional structure of one pixel.

[0038] As shown in FIG. 6(a), a plurality of pixels 152, each including a plurality of light-emitting elements, are arranged in a matrix in a display region 151 of an organic EL display device 150. As will be described in detail later, each light-emitting element has a structure including an organic layer sandwiched between a pair of electrodes. Note that the term "pixel" here refers to the smallest unit that enables a desired color to be displayed in the display region 151. In the organic EL display device according to this embodiment, each pixel 152 is configured by a combination of a first light-emitting element 152R, a second light-emitting element 152G, and a third light-emitting element 152B, which emit light different from one another. The pixel 152 is often configured by a combination of red, green, and blue light-emitting elements, but may also be a combination of yellow, cyan, and white light-emitting elements, and is not particularly limited as long as it emits at least one color.

[0039] 6(b) is a partial cross-sectional schematic diagram taken along line AB in FIG. 6(a). A pixel 152 is composed of a plurality of light-emitting elements, each of which includes a first electrode (anode) 154, a hole transport layer 155, one of light-emitting layers 156R, 156G, and 156B, an electron transport layer 157, and a second electrode (cathode) 158 on a substrate 153. Among these, the hole transport layer 155, the light-emitting layers 156R, 156G, and 156B, and the electron transport layer 157 correspond to organic layers. In this embodiment, the light-emitting layer 156R is an organic EL layer that emits red light, the light-emitting layer 156G is an organic EL layer that emits green light, and the light-emitting layer 156B is an organic EL layer that emits blue light. The light-emitting layers 156R, 156G, and 156B are formed in patterns corresponding to the light-emitting elements (sometimes referred to as organic EL elements) that emit red, green, and blue light, respectively. Furthermore, first electrode 154 is formed separately for each light-emitting element. Hole transport layer 155, electron transport layer 157, and second electrode 158 may be formed in common for multiple light-emitting elements 152R, 152G, and 152B, or may be formed for each light-emitting element. In order to prevent short-circuiting between first electrode 154 and second electrode 158 due to foreign matter, insulating layer 159 is provided between first electrodes 154. Furthermore, because the organic EL layer deteriorates due to moisture and oxygen, protective layer 140 is provided to protect the organic EL elements from moisture and oxygen.

[0040] 6(b), the hole transport layer 155 and the electron transport layer 157 are shown as single layers, but depending on the structure of the organic EL display element, they may be formed of multiple layers including a hole blocking layer and an electron blocking layer. Furthermore, a hole injection layer having an energy band structure that can smoothly inject holes from the first electrode 154 to the hole transport layer 155 can be formed between the first electrode 154 and the hole transport layer 155. Similarly, an electron injection layer can be formed between the second electrode 158 and the electron transport layer 157.

[0041] Next, an example of a method for manufacturing an organic EL display device will be specifically described.

[0042] First, a circuit (not shown) for driving the organic EL display device and a substrate 153 on which a first electrode 154 is formed are prepared.

[0043] An acrylic resin is formed by spin coating on the substrate 153 on which the first electrode 154 is formed, and the acrylic resin is patterned by lithography so that an opening is formed in the portion where the first electrode 154 is formed, thereby forming an insulating layer 159. This opening corresponds to the light-emitting region where the light-emitting element actually emits light.

[0044] The substrate 153 with the patterned insulating layer 159 is carried into a first organic material film formation apparatus, and the substrate is held by a substrate support table and an electrostatic chuck. A hole transport layer 155 is formed as a common layer on the first electrode 154 in the display area. The hole transport layer 155 is formed by vacuum deposition. In practice, the hole transport layer 155 is formed to be larger than the display area 151, so a high-resolution mask is not required.

[0045] Next, the substrate 153 on which the hole transport layer 155 has been formed is carried into a second organic material film formation apparatus and held by a substrate support table and an electrostatic chuck. The substrate and a mask are aligned, and the substrate is placed on the mask. A red light-emitting layer 156R is then formed on the portion of the substrate 153 where the red light-emitting element is to be disposed.

[0046] Similar to the formation of the light-emitting layer 156R, a green-emitting light-emitting layer 156G is formed by a third organic material film formation apparatus, and then a blue-emitting light-emitting layer 156B is formed by a fourth organic material film formation apparatus. After the formation of the light-emitting layers 156R, 156G, and 156B is completed, an electron transport layer 157 is formed over the entire display area 151 by a fifth film formation apparatus. The electron transport layer 157 is formed as a layer common to the three light-emitting layers 156R, 156G, and 156B.

[0047] The substrate on which the electron transport layer 157 has been formed is moved in a metallic evaporation material deposition device, and the second electrode 158 is deposited.

[0048] Thereafter, the substrate is transferred to a plasma CVD apparatus, where a protective layer 140 is formed, and the organic EL display device 150 is completed.

[0049] If the substrate 153 on which the insulating layer 159 has been patterned is exposed to an atmosphere containing moisture or oxygen from the time it is carried into the film-forming apparatus until the completion of the formation of the protective layer 140, the light-emitting layer made of an organic EL material may be deteriorated by the moisture or oxygen. Therefore, in this embodiment, the substrate is carried in and out of the film-forming apparatus in a vacuum atmosphere or an inert gas atmosphere.

[0050] <Advantages of this Example> According to this embodiment, it is possible to prevent the temperature of the entire surface of the electrostatic attraction unit 320 from becoming uneven, and it is possible to prevent the temperature of the substrate S and the mask M from becoming uneven depending on the position. This prevents the degree of thermal expansion of the substrate S and the mask M from varying depending on the position, and prevents a decrease in positioning accuracy, thereby improving film formation accuracy. [Explanation of symbols]

[0051] 10: Film forming apparatus 110: Chamber 120: Vacuum pump 210: Evaporation source 211: Case 212: Nozzle 220: Atmospheric box 221: First atmospheric arm 222: Second atmospheric arm 232: Guide rail 240: Gear 300: Electrostatic adsorption unit 301: Movement mechanism 310: Substrate 320: Electrostatic adsorption section 321: Electric circuit 330: Temperature adjustment section 331: Cooling layer 331a: Flow path 332: Heating layer 332a: Heater circuit 410: Substrate movement mechanism 420: Mask movement mechanism C: Control section M: Mask R1: First region R2: Second region R3: Third region R4: Fourth region R5: Fifth region R6: Sixth region S: Substrate TS: Temperature sensor

Claims

1. an electrostatic suction unit that electrostatically suctions the substrate; a film formation source configured to be movable relative to the electrostatic adsorption unit and configured to form a thin film on the substrate via a mask aligned with the substrate; A film forming apparatus comprising: the electrostatic chuck unit is configured to be divided into a plurality of regions in a direction of movement relative to the film formation source, and each region is temperature-controllable independently, and the temperature of each region is controlled individually according to its positional relationship with the film formation source.

2. 2. The film forming apparatus according to claim 1, wherein the film forming source is an evaporation source having a plurality of nozzles for spraying film forming material arranged at intervals in a direction intersecting the direction of relative movement with the electrostatic adsorption unit.

3. 3. The film forming apparatus according to claim 1, wherein the electrostatic suction unit includes a flat electrostatic suction portion and a flat temperature adjustment portion disposed on the opposite side of the electrostatic suction portion from the substrate.

4. 4. The film deposition apparatus according to claim 3, wherein a flat substrate is disposed between the electrostatic attraction unit and the temperature adjustment unit.

5. 4. The film forming apparatus according to claim 3, wherein the temperature adjusting unit includes a flow path through which a cooling liquid flows, and heater circuits disposed in the plurality of regions, respectively.

6. 6. The film forming apparatus according to claim 5, wherein the temperature adjusting unit comprises: a cooling layer having the flow path; and a heating layer having the heater circuit and disposed closer to the substrate than the cooling layer.

7. 3. The film forming apparatus according to claim 1, wherein the temperature control comprises detecting the temperatures of the plurality of regions in the electrostatic chucking unit individually, and performing feedback control in accordance with the detected temperatures.

8. 3. The film deposition apparatus according to claim 1, wherein the temperature control is performed by feedforward control according to the position of the film deposition source which moves relatively to the electrostatic adsorption unit.

9. 3. The film formation apparatus according to claim 1, wherein the temperature control is performed by detecting temperatures of the plurality of regions in the electrostatic chuck unit individually, while performing feedforward control according to a position of the film formation source that moves relatively to the electrostatic chuck unit, and performing feedback control according to the detected temperatures.

10. an alignment step of aligning the substrate electrostatically attracted to the electrostatic attraction unit with a mask disposed on the film formation surface of the substrate; a film formation step of forming a thin film on the film formation surface of the substrate by a film formation source that is movable relative to the electrostatic adsorption unit; A film forming method comprising: the electrostatic chuck unit is configured to be divided into a plurality of regions in a direction of movement relative to the film formation source, and each region is temperature-controllable independently; and in the film formation step, the temperature of each region is controlled individually in accordance with its positional relationship with the film formation source.

11. A method for manufacturing an electronic device, comprising the steps of: manufacturing an electronic device by using the film forming method according to claim 10;

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