Apparatus and method for measuring modified area of substrate

Abstract

To provide a substrate reforming area measuring device.SOLUTION: The imaging apparatus includes a first imaging device 101, a second imaging device 102, a third imaging device 103, and a microcomputer unit 104. The first imaging device faces the first surface of the substrate 110 and is configured to photograph the substrate to obtain a first image. The second imaging device faces the second surface of the substrate and is configured to photograph the substrate to obtain a second image. The first surface of the substrate is opposite to the second surface of the substrate. The third imaging device obliquely faces the first surface of the substrate or the second surface of the substrate, and is configured to photograph the substrate to obtain a third image. The micro-processor unit obtains a modified area measurement information of at least one modified area of the substrate according to the first image, the second image and the third image.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a substrate measuring apparatus and method, and more particularly to a substrate modification region measuring apparatus and method capable of measuring a substrate modification region. [Background technology]

[0002] A through-hole glass (TGV) substrate is a glass substrate with multiple through-holes, and is used as an interposer when packaging 3D chips or 2.5D chips. In particular, for conventional integrated circuits that operate at high speeds and high frequencies, it is inevitable to use a glass substrate with through holes as an interposer when packaging 3D or 2.5D chips, as it has a higher dielectric constant and better interference resistance.

[0003] In a typical method for forming a glass substrate with through holes, the glass substrate is first modified to form a plurality of modified areas at a plurality of specific positions on the glass substrate. Then, the glass substrate having the plurality of modified areas is immersed in an etching solution tank to etch the modified areas, thereby forming glass with through holes in the modified areas. Summary of the Invention [Problem to be solved by the invention]

[0004] However, in the above-mentioned conventional techniques, the most common modification method is laser modification, which involves irradiating a laser light source onto a specific position on the glass substrate to form a modified area at that position on the glass substrate. Conventional measuring devices mainly measure the formed glass with through holes, but do not measure the modified area of ​​the glass substrate after modification and before etching.

[0005] Therefore, the present inventors believed that the above drawbacks could be improved, and as a result of extensive research, they came up with the proposal of the present invention, which effectively improves the above problems through rational design.

[0006] The present invention was made in consideration of the above problems through extensive research by the inventors, and its object is to provide an apparatus and method for measuring a modified area on a substrate. In other words, if the modification of the modified area of ​​the substrate is incomplete and / or has defects, the formed through holes will not be as expected, so before etching, the modified area of ​​the substrate is measured using the substrate modified area measurement device and method of the present invention. If the modification of the modified area is incomplete and / or has defects, further modification or other processing may be performed to ensure that the formed through holes are as expected and to improve the yield of substrates with through holes. [Means for solving the problem]

[0007] In order to achieve the above object, a substrate modified area measuring device according to one aspect of the present invention includes a first imaging device, a second imaging device, and a microcomputer unit. A first imaging device is disposed above and directly opposite the first surface of the substrate and is used to photograph the substrate to obtain a first image. A second imaging device is positioned below the second surface of the substrate, facing in front of the second surface of the substrate, and is used to photograph the substrate to obtain a second image. The first surface of the substrate faces the second surface of the substrate. The microcomputer unit is signal-connected to the first imaging device and the second imaging device, and obtains modified area measurement information of at least one modified area of ​​the substrate based on the first image and the second image.

[0008] Furthermore, a method for measuring a modified area of ​​a substrate, which is another aspect of the present invention, includes the following steps. Providing a first collimated beam that is irradiated in front of the second surface of the substrate and travels toward a first imaging device, the first imaging device photographing the substrate to obtain a first image, the second surface of the substrate facing the first surface of the substrate, and the first imaging device being placed on the first surface of the substrate. providing a second collimated beam irradiating the front of the first surface of the substrate and traveling toward a second imaging device, the second imaging device photographing the substrate to obtain a second image, the second imaging device being positioned below the second surface of the substrate; A step of providing a third collimated beam that is obliquely irradiated onto the second surface or the first surface of the substrate and travels toward a third imaging device, which photographs the substrate to obtain a third image, wherein the third imaging device is installed above the first surface of the substrate, located to one side of the first imaging device, and obliquely facing the first surface of the substrate, or the third imaging device is installed below the second surface of the substrate, located to one side of the second imaging device, and obliquely facing the first surface of the substrate. Using a microcomputer unit, obtaining modified area measurement information of at least one modified area of ​​the substrate based on the first image, the second image, and the third image.

[0009] Furthermore, a method for measuring a modified area of ​​a substrate, which is another aspect of the present invention, includes the following steps. providing a first collimated beam irradiating a front surface of the second surface of the substrate and traveling toward a first imaging device, the first imaging device photographing the substrate to obtain a first image, the second surface of the substrate facing the first surface of the substrate, the first imaging device being installed on the first surface of the substrate, a polarizing plate being installed between the first surface of the substrate and the first imaging device, and another polarizing plate being installed between the second surface of the substrate and a first collimated light source for emitting the first collimated beam, the polarization direction of which is orthogonal to the polarization direction of the polarizing plate; providing a second collimated beam irradiating a front surface of the first surface of the substrate and traveling toward a second imaging device, the second imaging device photographing the substrate to obtain a second image, the second imaging device being disposed below the second surface of the substrate, another polarizing plate being disposed between the second surface of the substrate and the second imaging device, and the polarizing plate being disposed between the first surface of the substrate and a second collimated light source for emitting the first collimated beam; Using a microcomputer unit to obtain modified area measurement information of at least one modified area of ​​the substrate based on the first image and the second image. [Effects of the Invention]

[0010] In summary, the substrate modified area measuring device and method according to the present invention can measure the modified area of ​​a substrate, thereby improving the yield of substrates with through holes thus formed.

[0011] Other objects, configurations and effects of the present invention will become apparent from the following detailed description of the preferred embodiments of the present invention. [Brief explanation of the drawings]

[0012] [Figure 1] 1 is a schematic diagram showing the configuration of a substrate modified area measuring device according to a first embodiment of the present invention. [Figure 2] FIG. 10 is a schematic diagram showing the configuration of a substrate modified area measuring device according to a second embodiment of the present invention. [Figure 3] FIG. 10 is a schematic diagram showing the configuration of a substrate modified area measuring device according to a third embodiment of the present invention. [Figure 4] 1 is a schematic diagram showing a substrate modified area measuring method according to an embodiment of the present invention; [Figure 5] 1 is a schematic view showing a first image acquired by a substrate modified area measuring apparatus according to a first embodiment of the present invention; [Figure 6] 4 is a schematic view showing a second image acquired by the substrate modified area measuring apparatus according to the first embodiment of the present invention. FIG. [Figure 7] FIG. 4 is a schematic view showing a third image acquired by the substrate modified area measuring apparatus according to the first embodiment of the present invention. [Figure 8] FIG. 10 is a schematic diagram showing the configuration of a substrate modified area measuring device according to a fourth embodiment of the present invention. [Figure 9] FIG. 10 is a schematic view showing a first image acquired by a substrate modified area measuring apparatus according to a fourth embodiment of the present invention. [Figure 10] FIG. 10 is a schematic view showing a second image acquired by the substrate modified area measuring apparatus according to the fourth embodiment of the present invention. [Figure 11] FIG. 10 is a schematic diagram showing the configuration of a substrate modified area measuring device according to a fifth embodiment of the present invention. [Figure 12] FIG. 10 is a schematic view showing a third image acquired by the substrate modified area measuring apparatus according to the fifth embodiment of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0013] Hereinafter, embodiments of the present invention will be described in detail. However, the present invention is not limited to this, and various modifications are possible within the scope of the description, and embodiments obtained by appropriately combining the technical means disclosed in different embodiments are also included in the technical scope of the present invention.

[0014] FIG. 1 is a schematic diagram showing the configuration of a substrate modified area measuring device according to a first embodiment of the present invention. The substrate modified area measuring device is used to measure the modified area 111 of the substrate 110 , thus obtaining modified area measurement information of the modified area 111 . The substrate 110 is, for example, a glass substrate. The modified area 111 of the substrate 110 is a laser modified area formed after irradiation with a laser light source. However, the present invention does not limit the type of substrate 110 and the method of forming the modified area 111.

[0015] The substrate modified area measuring device includes a first imaging device 101, a second imaging device 102, a third imaging device 103, and a microcomputer unit 104. The first imaging device 101 is installed on the first surface of the substrate 110 (i.e., installed on the upper surface of the substrate 110), faces the front of the first surface of the substrate 110 (i.e., the extension direction of the central optical axis of the first imaging device 101 is perpendicular to the first surface of the substrate 110), and is used to photograph the substrate 110 and obtain a first image. The second imaging device 102 is positioned below the second surface of the substrate 110 (i.e., positioned below the underside of the substrate 110), faces in front of the second surface of the substrate, and is used to photograph the substrate 110 and acquire a second image. The first surface of the substrate 110 faces the second surface of the substrate 110 .

[0016] The third imaging device 103 is disposed on the first surface of the substrate 110 and on one side of the first imaging device 101 (for example, located to the right of the first imaging device 101). The third imaging device 103 is used to photograph the substrate 110 and obtain a third image. The microcomputer unit 104 is connected to the first imaging device 101, the second imaging device 102, and the third imaging device 103 via a wired or wireless signal, and obtains modified area measurement information of at least one modified area 111 of the substrate 110 based on the first image, the second image, and the third image.

[0017] Furthermore, the modified area measurement information of the modified area 111 includes a first position of the modified area 111 on the first surface of the substrate 110, a second position of the modified area 111 on the second surface of the substrate 110, and modification information of the modified area 111. The modification information of the modified area 111 is used to indicate whether the modification of the modified area 111 is complete and / or whether defects (e.g., impurities or dirt, but the present invention is not limited to these) are present. The modified area measurement information of the modified area 111 is not limited to the above content, and may further include diameter information (diameter of the major axis and diameter of the minor axis) and circularity of the modified area 111 on the first surface and the second surface of the substrate 110.

[0018] The modified area measurement information is used to determine whether etching can be performed on the substrate 110, and prevents the yield of the subsequently formed substrate with through holes (for example, but not limited to, a glass substrate with through holes (TGV substrate)) from decreasing too much. If the modified area measurement information indicates that the display substrate 110 can be subjected to another modification process or other process so that the modified area meets the expected requirements, the substrate 110 can be subjected to another modification process or other process. In this way, the yield of the subsequently formed substrates with through holes can be increased.

[0019] In this embodiment, the substrate modified area measuring device further includes a first collimated light source 121, a second collimated light source 122, and a third collimated light source 123. The first collimated light source 121 is connected to the microcomputer unit 104 by a wired or wireless signal, is installed under the second surface of the substrate 110, faces the front of the second surface of the substrate 110, and is used to illuminate the substrate 110 and provide a first collimated beam L1 that travels toward the first imaging device 101. The second collimated light source 122 is connected to the microcomputer unit 104 by a wired or wireless signal, is installed on the first surface of the substrate 110, faces the front of the first surface of the substrate 110, and is used to illuminate the substrate 110 and provide a second collimated beam L2 that travels toward the second imaging device 102. The third collimated light source 123 is connected to the microcomputer unit 104 by a wired or wireless signal, is installed under the second surface of the substrate 110, faces the second surface of the substrate 110 obliquely, and is used to irradiate the substrate 110 and provide a third collimated beam L3 that travels toward the third imaging device 103.

[0020] Alternatively, the first imaging device 101 and the second collimated light source 122 may be integrated as a first telecentric mirror imaging module 21, and the second imaging device 102 and the first collimated light source 121 may be integrated as a second telecentric mirror imaging module 22, but the present invention is not limited thereto. In addition, the first wavelength range of the first collimated beam L1 may be designed to be different from or the same as the second wavelength range of the second collimated beam L2, and the second wavelength range of the second collimated beam L2 may be designed to be different from or the same as the third wavelength range of the third collimated beam L3. As an example, the color of any one of the first collimated beam L1, the second collimated beam L2, and the third collimated beam L3 may be white, red, green, or blue. Furthermore, any one of the first imaging device 101, the second imaging device 102, and the third imaging device 103 is a color camera or a monochrome camera, and preferably a color depth-of-field camera or a monochrome depth-of-field camera. In addition, in other embodiments, each of the first collimated beam L1, the second collimated beam L2, and the third collimated beam L3 may be realized using a non-collimated beam, that is, the second collimated light source 122 and the third collimated light source 123 may be changed to a non-collimated light source.

[0021] FIG. 5 is a schematic view showing a first image acquired by the substrate modified area measuring apparatus according to the first embodiment of the present invention. FIG. 6 is a schematic view showing a second image acquired by the substrate modified area measuring apparatus according to the first embodiment of the present invention. FIG. 7 is a schematic view showing a third image acquired by the substrate modified area measuring apparatus according to the first embodiment of the present invention. As shown in FIG. 5, the first image IMG1 displays the distribution of multiple modified areas 111, 111a, 111b on the first surface of the substrate 110, and the microcomputer unit 104 obtains the first positions of the modified areas 111, 111a, 111b on the first surface of the substrate 110 based on the first image IMG1. As shown in Figure 6, the second image IMG2 displays the distribution of multiple modified areas 111, 111a, 111b on the second surface of the substrate 110, and the microcomputer unit 104 obtains the second positions of the modified areas 111, 111a, 111b on the second surface of the substrate 110 based on the second image IMG2.

[0022] As shown in FIG. 7, the third image IMG3 displays the modification status of a plurality of modified areas 111, 111a, 111b of the substrate 110 between the first surface and the second surface of the substrate 110. Furthermore, upon modification, the refractive index, reflectance, and transmission coefficient of the modified areas 111, 111a, 111b are all altered, and compared to the unmodified areas, light is scattered in the modified areas 111, 111a, 111b, and the brightness of the multiple modified areas 111, 111a, 111b in the third image IMG3 becomes lower than the brightness of the unmodified areas. The AI ​​algorithm or other algorithms determine the modification status of the multiple modified areas 111, 111a, 111b between the first surface and the second surface of the substrate 110. In this way, the microcomputer unit 104 acquires modification information of the modified areas 111, 111a, 111b based on the third image IMG3, the first positions of the modified areas 111, 111a, 111b on the first surface of the substrate 110, and the second position of the modified area 111 on the second surface of the substrate 110.

[0023] For example, in this embodiment, if the modified area measurement information indicates that there is a deviation between the first position of the modified areas 111a, 111b on the first surface of the substrate 110 and the second position of the modified areas 111a, 111b on the second surface of the substrate 110, and if the substrate 110 cannot be made to meet the expected requirements by further modification processing or other processing (i.e., the deviation decreases), the substrate 110 is deemed to be defective. If the substrate 110 can be modified or otherwise processed again to meet the expected requirements, the substrate 110 is modified or otherwise processed again.

[0024] For example, in this embodiment, if the modified area measurement information indicates that the degree of modification of the modified area 111a is insufficient, the modification is incomplete, and the substrate 11 is subjected to a modification process or other process again to meet the expected requirements of the substrate 110 (i.e., the degree of modification of the modified area 111a is increased and the modification of the modified area 111a is completed). In this way, the yield of the substrate with through holes formed after the subsequent etching process of the substrate 110 is effectively increased.

[0025] Incidentally, in the above-described embodiment of the substrate modified area measuring device, an example including the third imaging device 103 and the third collimated light source 123 is given, but the present invention is not limited to this. In one embodiment, the third imaging device 103 and the third collimated light source 123 are excluded from the substrate modified area measurement device, i.e., the substrate modified area measurement device does not have the third imaging device 103 and the third collimated light source 123, and the microcomputer unit 104 obtains modified area measurement information of at least one modified area 111 of the substrate 110 based on the first image and the second image. For example, depending on the size of the modified area 111 in the first image and the second image, it is determined whether the modification of the modified area 111 is complete and / or whether defects exist.

[0026] FIG. 2 is a schematic diagram showing the configuration of a substrate modified area measuring device according to a second embodiment of the present invention. In this embodiment, the third imaging device 103 is installed on the second surface of the substrate 110 and on one side of the second imaging device 102 (for example, it is located on the left side of the second imaging device 102, but in other embodiments it may be located on the right side of the second imaging device 102), and is obliquely facing the second surface of the substrate 110, and the third collimated light source 123 is installed on the first surface of the substrate 110 and is obliquely facing the first surface of the substrate 110, which is different from the embodiment of Figure 1.

[0027] FIG. 3 is a schematic diagram showing the configuration of a substrate modified area measuring device according to a third embodiment of the present invention. This embodiment differs from the embodiment of FIG. 1 in that the substrate modified area measuring apparatus further includes a fourth imaging device 105 and a fourth collimated light source 124. The fourth imaging device 105 is connected to the microcomputer unit 104 via a wired or wireless signal, and is installed under the second surface of the substrate 110 and on one side of the second imaging device 102, facing the second surface of the substrate 110 obliquely, and is used to photograph the substrate 110 and obtain a fourth image. The fourth collimated light source 124 is connected to the microcomputer unit 104 by a wired or wireless signal, is installed on the first surface of the substrate 110, faces the first surface of the substrate 110 obliquely, and is used to illuminate the substrate 110 and provide a fourth collimated beam L4 that travels toward the fourth imaging device 105.

[0028] In this embodiment, the microcomputer unit 104 obtains modified area measurement information of at least one modified area 111 of the substrate 110 based on the first image, the second image, the third image IMG3, and the fourth image. The fourth image may increase the accuracy of the modified area measurement information because the fourth image resembles a mirror image of the third image. In addition, in this embodiment, the fourth collimated light source 124 and the third imaging device 103 may be integrated as a third telecentric mirror imaging module 23, and the third collimated light source 123 and the fourth imaging device 105 may be integrated as a fourth telecentric mirror imaging module 24, but the present invention is not limited to this.

[0029] The following description will be given with reference to both FIG. 1 and FIG. 4, or both FIG. 2 and FIG. FIG. 4 is a schematic diagram showing a method for measuring a modified area of ​​a substrate according to one embodiment of the present invention. First, in step S801, a first collimated light source 121 is used to illuminate the front of the second surface of the substrate 110 and provide a first collimated beam L1 traveling toward the first imaging device 101, which photographs the substrate 110 to obtain a first image. The second surface of the substrate 110 faces the first surface of the substrate 110 , and the first imaging device 101 is disposed on the first surface of the substrate 110 . Next, in step S802, a second collimated light source 122 is used to illuminate the front of the first surface of the substrate 110 and provide a second collimated beam L2 that travels toward the second imaging device 102, which then photographs the substrate 110 to obtain a second image. The second imaging device 102 is positioned below the second surface of the substrate 110 .

[0030] Then, in step S803, a second collimated light source 122 is used to obliquely illuminate the second surface (see the embodiment in Figure 1) or the first surface (see the embodiment in Figure 2) of the substrate 110 and provide a third collimated beam traveling toward the third imaging device 103, which photographs the substrate 110 to obtain a third image. The third imaging device 103 is installed on the first surface of the substrate 110, located on one side of the first imaging device 101, and obliquely facing the first surface of the substrate 110 (see the embodiment in Figure 1), or the third imaging device 103 is installed below the second surface of the substrate 110, located on one side of the second imaging device 102, and obliquely facing the first surface of the substrate 110 (see the embodiment in Figure 2). Then, in step S804, the microcomputer unit 104 is used to obtain modified area measurement information of at least one modified area 111 of the substrate 110 based on the first, second, and third images.

[0031] Furthermore, as in the above-described substrate modified area measuring device, the third imaging device 103 and the third collimated light source 123 do not have to be used. Therefore, in other embodiments, the above-described substrate modified area measuring method may not include step S803. Then, modify step S804 to use the microcomputer unit 104 to obtain modified area measurement information of at least one modified area 111 of the substrate 110 based on the first image and the second image.

[0032] FIG. 8 is a schematic diagram showing the configuration of a substrate modified area measuring device according to a fourth embodiment of the present invention. The substrate modified area measuring apparatus of FIG. 8 does not include the third imaging device 103 and the third collimated light source 123, but does include polarizing plates 31 and 32. 1 in that the polarizer 31 is installed between the first imaging device 101 and the substrate 110, and between the second collimated light source 122 and the substrate 110, and the polarizer 32 is installed between the second imaging device 102 and the substrate 110, and between the second collimated light source 122 and the substrate 110. The polarizers 31 and 32 may be realized by a polarizing filter effect, allowing light rays of a specific polarization direction to enter and exit, and the polarization directions of the polarizers 31 and 32 are orthogonal to each other.

[0033] In this embodiment, the polarization directions of the polarizers 31 and 32 are, for example, horizontal and vertical, respectively, the polarization direction of the first collimated beam L1 is vertical, and the polarization direction of the second collimated beam L2 is, for example, horizontal. The modified area 111 is modified so that the polarization direction of the beam passing through it is altered. By installing the polarizing plate 31, the first imaging device 101 can image only horizontal beams, and by installing the polarizing plate 32, the second imaging device 102 can image only vertical beams. After the substrate 110 is modified, the alignment direction of the crystal lattice changes, so that the modified area 111 changes the polarization direction of the beam. After the first collimated beam L1 passes through the modified area 111, the polarization direction is changed (from vertical to diagonal), so that the horizontal portion of the beam passing through the modified area 111 can be imaged by the first imaging device 101, and after the second collimated beam L2 passes through the modified area 111, the polarization direction is changed (from horizontal to diagonal), so that the vertical portion of the beam passing through the modified area 111 can be imaged by the second imaging device 102.

[0034] The description will be made with reference to both FIG. 8 and FIG. FIG. 9 is a schematic view showing a first image acquired by the substrate modified area measuring apparatus according to the fourth embodiment of the present invention. In the first image IMG1 of Figure 9, according to the above explanation, the part of the first collimated beam L1 that passes through the substrate 110 other than the modified area 111 cannot be imaged by the first imaging device 101 and therefore appears black, while the part of the first collimated beam L1 that passes through the modified area 111 of the substrate 110 has its polarization direction altered and can therefore be imaged by the first imaging device 101. Furthermore, the higher the degree of modification of the modified area 111, the larger the bright spot of the modified area 111 formed in the first image IMG1. For example, in the first image IMG1 of FIG. 9, the degree of modification of the modified area 111a is higher than the degree of modification of the other modified areas 111, and the degree of modification of the modified area 111b is lower than the degree of modification of the other modified areas 111. The bright spots in the modified areas 111 a, 111 b, 111 are also used to measure the stress situation in the substrate 110. In addition, the size of the bright spot is enlarged based on the size of the modified area 111 based on a ratio (for example, 10 or more and related to the degree of modification), so the first imaging device 101 may adopt an imaging device with low resolution, and the first collimated beam L1 may not be a collimated beam.

[0035] The description will be made with reference to both FIG. 8 and FIG. FIG. 10 is a schematic view showing a second image acquired by the substrate modified area measuring apparatus according to the fourth embodiment of the present invention. In the second image IMG2 of Figure 10, according to the above explanation, the second collimated beam L2 that passes through the substrate 110 other than the modified area 111 cannot be imaged by the second imaging device 102 and therefore appears black, while the second collimated beam L2 that passes through the modified area 111 of the substrate 110 has its polarization direction altered and can therefore be imaged by the second imaging device 102. Furthermore, the higher the degree of modification of the modified area 111, the larger the bright spot of the modified area 111 formed in the second image IMG2. For example, in the second image IMG2 of FIG. 10, the degree of modification of the modified area 111a is higher than the degree of modification of the other modified areas 111, and the degree of modification of the modified area 111b is lower than the degree of modification of the other modified areas 111. In addition, the size of the bright spot is enlarged based on the size of the modified area 111 based on a ratio (for example, 10 or more and related to the degree of modification), so the second imaging device 102 may adopt an imaging device with low resolution, and the second collimated beam L2 may not be a collimated beam.

[0036] The following description will be given with reference to FIGS. In the example of Figures 1 to 3, if there are dirt defects 41, 42 (e.g., other particles) on the substrate 110, the microcomputer unit 104 needs to separately execute a dirt defect 41, 42 interpretation algorithm to remove the dirt defects 41, 42 in the image and obtain accurate modified area measurement information of the modified area 111 of the substrate 110. However, as can be seen from the method of Figure 8 and the related explanations of Figures 9 and 10, the dirt scratches 41 and 42 cannot change the polarization direction of the beam, so they appear black in the first image IMG1 and the second image IMG2, and the calculation time and power consumption required for the microcomputer unit 104 in the examples of Figures 1 to 3 to separately execute an algorithm for reading the dirt scratches 41 and 42 can be saved.

[0037] FIG. 11 is a schematic diagram showing the configuration of a substrate modified area measuring device according to a fifth embodiment of the present invention. The substrate modification area measuring device further includes polarizing plates 31, 32, 33, and . 1 in that the polarization directions of polarizers 31 and 32 are orthogonal to each other, the polarization directions of polarizers 33 and 34 are orthogonal to each other, the polarization directions of polarizers 31 and 33 are orthogonal to each other, and the polarization directions of polarizers 32 and 34 are orthogonal to each other. The first and second images acquired by the substrate modified area measuring device of Figure 11, and the first and second images acquired by the substrate modified area measuring device of the embodiment of Figure 8 will not be described again here.

[0038] The description will be made with reference to both FIG. 11 and FIG. FIG. 12 is a schematic view showing a third image acquired by the substrate modified area measuring apparatus according to the fifth embodiment of the present invention. In the third image IMG3 of Figure 12, according to the above explanation, the third collimated beam L3 that passes through the substrate 110 other than the modified area 111 cannot be imaged by the third imaging device 103 and therefore appears black, while the third collimated beam L3 that passes through the modified area 111 of the substrate 110 has its polarization direction altered and can therefore be imaged by the third imaging device 103. Furthermore, the higher the degree of modification of the modified area 111, the larger the bright spot of the modified area 111 formed in the third image IMG3. For example, in the third image IMG3 of FIG. 12, the degree of modification of the modified area 111a is higher than the degree of modification of the other modified areas 111, and the degree of modification of the modified area 111b is lower than the degree of modification of the other modified areas 111. In addition, the size of the bright spot is enlarged based on the size of the modified area 111 based on a ratio (for example, 10 or more and related to the degree of modification), so the third imaging device 103 may adopt an imaging device with low resolution, and the third collimated beam L3 may not be a collimated beam.

[0039] Further, referring back to FIG. In some embodiments, the first collimated beam in step S801 is a collimated beam that passes through a first polarizer, and a second polarizer is placed in front of the first imaging device. The second collimated beam in step S802 is a collimated beam passing through a second polarizer, and a first polarizer is placed in front of the second imaging device. The third collimated beam in step S803 is a collimated beam passing through a third polarizer, and a fourth polarizer is placed in front of the third imaging device. The polarization direction of the first polarizer is perpendicular to the polarization direction of the second polarizer, and the polarization direction of the third polarizer is perpendicular to the polarization direction of the fourth polarizer. When the third collimated beam is irradiated obliquely onto the first surface of the substrate, the polarization direction of the third polarizer is the same as the polarization direction of the second polarizer. When the third collimated beam is irradiated obliquely onto the second surface of the substrate, the polarization direction of the third polarizer is the same as the polarization direction of the second polarizer.

[0040] In summary, the substrate modified area measuring device and method according to the present invention measures the modified area of ​​a substrate and acquires modified area measurement information. In this way, if the modification of the modified area of ​​the substrate is incomplete and / or defects are present or absent, the modification process or other process can be carried out again to complete the modification of the modified area and to eliminate defects before the substrate is subjected to the etching process, thereby improving the yield of the substrates with through holes that are formed.

[0041] The present invention is not limited to the above-described embodiments, and various modifications are possible within the scope of the claims. Embodiments obtained by appropriately combining the technical means disclosed in different embodiments are also included in the technical scope of the present invention. [Explanation of symbols]

[0042] 101 First imaging device 102 Second imaging device 103 Third Imaging Device 104 Microcomputer Unit 105 4th Imaging Device 110 Substrate 111 Reformed area 111a Reformation area 111b Modification area 121 1st collimated light source 122 2nd collimated light source 123 Third collimated light source 124 4th collimated light source 21 First telecentric mirror imaging module 22 Second telecentric mirror imaging module 23 Third telecentric mirror imaging module 24 4th Telecentric Mirror Imaging Module 31~34 Polarizing plate 41 Dirt Scratches 42 Dirt Scratches IMG1 1st image IMG2 2nd image IMG3 3rd image L1 First collimated beam L2 Second collimated beam L3 Third collimated beam L4 4th collimated beam S801~S804 steps

Claims

1. a first imaging device (101) placed on a first surface of a substrate (110) and facing in front of the first surface of the substrate (110) for photographing the substrate (110) to obtain a first image (IMG1); a second imaging device (102) located below the second surface of the substrate (110), facing directly to the second surface of the substrate (110), and used to photograph the substrate (110) to obtain a second image (IMG2), with the first surface of the substrate (110) facing the second surface of the substrate (110); a microcomputer unit (104) connected to the first imaging device (101) and the second imaging device (102) for signal connection, for obtaining modified area measurement information of at least one modified area (111) of the substrate (110) based on the first image (IMG1) and the second image (IMG2); a first collimated light source (121) connected to the microcomputer unit (104) and disposed under the second surface of the substrate (110), facing the front of the second surface of the substrate (110), for irradiating the substrate (110) and providing a first collimated beam (L1) traveling toward the first imaging device (101); A substrate modification area measurement device characterized by comprising: a second collimated light source (122) connected to the microcomputer unit (104) and installed on the first surface of the substrate (110), facing the front of the first surface of the substrate (110), for irradiating the substrate (110) and providing a second collimated beam (L2) that travels toward the second imaging device (102).

2. a third imaging device (103) disposed above the first surface of the substrate (110), on one side of the first imaging device (101) and obliquely facing the first surface of the substrate (110), or disposed below the second surface of the substrate (110), on one side of the second imaging device (102) and obliquely facing the second surface of the substrate (110); a third collimated light source (123) connected to the microcomputer unit (104) and disposed below the second surface or above the first surface of the substrate (110) and facing the second surface or the first surface of the substrate (110) in an oblique direction, for irradiating the substrate (110) and providing a third collimated beam (L3) traveling toward the third imaging device (103); the third imaging device (103) is used to photograph the substrate (110) to obtain a third image (IMG3); The substrate modified area measuring device of claim 1, characterized in that the microcomputer unit (104) is further connected to the first imaging device by signal and is used to obtain the modified area measurement information of the modified area (111) of the substrate (110) based on the first image (IMG1), the second image (IMG2), and the third image (IMG3).

3. 3. The substrate modified area measuring device of claim 2, wherein the modified area measurement information of the modified area (111) includes a first position of the modified area (111) on the first surface of the substrate (110), a second position of the modified area (111) on the second surface of the substrate (110), and modification information of the modified area (111), and the modification information of the modified area (111) is used to indicate whether modification of the modified area (111) is complete and / or whether defects exist.

4. The substrate modified area measuring device of claim 3, characterized in that the microcomputer unit (104) acquires the first position of the modified area (111) on the first surface of the substrate (110) based on the first image (IMG1), the microcomputer unit (104) acquires the second position of the modified area (111) on the second surface of the substrate (110) based on the second image (IMG2), and the microcomputer unit (104) acquires the modification information of the modified area (111) based on the third image (IMG3), the first position of the modified area (111) on the first surface of the substrate (110), and the second position of the modified area (111) on the second surface of the substrate (110).

5. The substrate modification area measurement device of claim 1 further comprises two polarizing plates (31, 32) whose two polarization directions are orthogonal to each other, one of the two polarizing plates (31, 32) being installed between the first imaging device (101) and the first surface of the substrate (110) and between the second collimated light source (122) and the first surface of the substrate (110), and the other of the two polarizing plates (31, 32) being installed between the second imaging device (102) and the second surface of the substrate (110), and between the first collimated light source (121) and the second surface of the substrate (110).

6. two polarizing plates (31, 32) whose two polarization directions are orthogonal to each other, one of the two polarizing plates (31, 32) being installed between the first imaging device (101) and the first surface of the substrate (110) and between the second collimated light source (122) and the first surface of the substrate (110), and the other of the two polarizing plates (31, 32) being installed between the second imaging device (102) and the second surface of the substrate (110) and between the first collimated light source (121) and the second surface of the substrate (110); The substrate modification area measurement device of claim 2 further comprises two other polarizers (33, 34) whose two polarization directions are orthogonal to each other, one of the other two polarizers (33, 34) being installed between the third imaging device (103) and the first surface or the second surface of the substrate (110), and the other of the two polarizers (31, 32) being installed between the third collimated light source (123) and the second surface or the first surface of the substrate (110).

7. 3. The substrate modification area measuring device of claim 2, wherein the first wavelength range of the first collimated beam (L1) is different from or the same as the second wavelength range of the second collimated beam (L2), and the second wavelength range of the second collimated beam (L2) is different from or the same as the third wavelength range of the third collimated beam (L3).

8. The substrate modified area measuring device of claim 1, characterized in that the modified area (111) of the substrate (110) is a laser modified area formed after irradiating the substrate (110) with a laser light source, and the substrate (110) is a glass substrate.

9. 3. The substrate modification area measuring device of claim 2, wherein any one of the first imaging device (101), the second imaging device (102), and the third imaging device (103) is a color depth of field camera or a monochrome depth of field camera.

10. 8. The substrate modification area measuring device of claim 7, wherein the color of any one of the first collimated beam (L1), the second collimated beam (L2), and the third collimated beam (L3) is white, red, green, or blue.

11. The substrate modification area measurement device of claim 1, characterized in that the first imaging device (101) and the second collimated light source (122) are integrated as a first telecentric mirror imaging module (21), and the second imaging device (102) and the first collimated light source (121) are integrated as a second telecentric mirror imaging module (22).

12. the third imaging device (103) is located above the first surface of the substrate (110), and the third collimated light source (123) is located below the second surface of the substrate (110); The substrate modification area measuring device is a fourth imaging device (105), the signal of which is connected to the microcomputer unit (104), the fourth imaging device (105) being disposed under the second surface of the substrate (110), and disposed on one side of the second imaging device (102), obliquely facing the second surface of the substrate (110), the fourth imaging device (105) being used to photograph the substrate (110) and obtain a fourth image; a fourth collimated light source (124) connected to the microcomputer unit (104) and disposed on the first surface of the substrate (110) and obliquely facing the first surface of the substrate (110), for irradiating the substrate (110) and providing a fourth collimated beam (L4) traveling toward the fourth imaging device (105); 3. The substrate modification area measuring device of claim 2, wherein the microcomputer unit (104) acquires the modification area measurement information of at least one modification area (111) of the substrate (110) based on the first image (IMG1), the second image (IMG2), the third image (IMG3), and the fourth image.

13. The substrate modification area measurement device of claim 12, characterized in that the fourth collimated light source (124) and the third imaging device (103) are integrated as a third telecentric mirror imaging module (23), and the third collimated light source (123) and the fourth imaging device (105) are integrated as a fourth telecentric mirror imaging module (24).

14. providing a first collimated beam (L1) irradiating a front surface of a second surface of a substrate (110) and traveling toward a first imaging device (101), the first imaging device (101) photographing the substrate (110) to obtain a first image (IMG1), the second surface of the substrate (110) facing the first surface of the substrate (110), and the first imaging device (101) being placed on the first surface of the substrate (110); providing a second collimated beam (L2) irradiating a front surface of the substrate (110) and traveling toward a second imaging device (102), the second imaging device (102) photographing the substrate (110) to obtain a second image (IMG2), the second imaging device (102) being positioned below a second surface of the substrate (110); providing a third collimated beam (L3) obliquely irradiating the second or first surface of the substrate (110) and traveling toward a third imaging device (103), the third imaging device (103) photographing the substrate (110) to obtain a third image (IMG3), the third imaging device (103) being installed above the first surface of the substrate (110), located on one side of the first imaging device (101), and obliquely facing the first surface of the substrate (110); or the third imaging device (103) being installed below the second surface of the substrate (110), located on one side of the second imaging device (102), and obliquely facing the second surface of the substrate (110); and using a microcomputer unit (104) to acquire modified area measurement information of at least one modified area (111) of the substrate (110) based on the first image (IMG1), the second image (IMG2), and the third image (IMG3).

15. providing a first collimated beam (L1) irradiating a front surface of a second surface of a substrate (110) and traveling toward a first imaging device (101), the first imaging device (101) photographing the substrate (110) to obtain a first image (IMG1), the second surface of the substrate (110) facing the first surface of the substrate (110), the first imaging device (101) being placed on the first surface of the substrate (110), a polarizing plate (31) being placed between the first surface of the substrate (110) and the first imaging device (101), another polarizing plate (32) being placed between the second surface of the substrate (110) and a first collimated light source (121) for emitting the first collimated beam (L1), the polarization direction of which is orthogonal to the polarization direction of the polarizing plate (31); providing a second collimated beam (L2) irradiating a front surface of the substrate (110) and traveling toward a second imaging device (102), the second imaging device (102) photographing the substrate (110) to obtain a second image (IMG2), the second imaging device (102) being located below the second surface of the substrate (110), the other polarizer (32) being located between the second surface of the substrate (110) and the second imaging device (102), and the polarizer (31) being located between the first surface of the substrate (110) and the second collimated light source (122) for emitting the first collimated beam (L1); and using a microcomputer unit (104) to acquire modified area measurement information of at least one modified area (111) of the substrate (110) based on the first image (IMG1) and the second image (IMG2).

Images