Semiconductor device

Abstract

To provide a semiconductor device capable of reducing noise caused by a leakage current.SOLUTION: The semiconductor package A10 includes a substrate 11, a first wiring layer 12, a second wiring layer 13, a first semiconductor device 21, a second semiconductor device 22, a conductive member 30, first and second gate terminals 441 and 442, first and second detection terminals 451 and 452, and a capacitor 24. The first semiconductor element 21 includes a first obverse-surface electrode 212 and a first gate electrode 213. The second semiconductor element 22 includes a second obverse-surface electrode 222 and a second gate electrode. The first front-surface electrode 212 and the second front-surface electrode 222 have different polarities. The first gate electrode 213 is electrically connected to the first gate terminal 441. The second gate electrode is electrically connected to a second gate terminal 442. The substrate 11 includes an exposed portion 11A located between the first wiring layer 12 and the second wiring layer 13. As viewed in the thickness direction, the conductive member 30 overlaps the exposed portion 11A.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present disclosure relates to semiconductor devices. [Background technology]

[0002] Conventionally, semiconductor devices incorporating multiple semiconductor elements (MOSFETs, IGBTs, etc.) with switching functions have been widely known and are primarily used for power conversion. Patent Document 1 discloses an example of such a semiconductor device. In the semiconductor device disclosed in this document, two wiring layers (metal patterns 4a, 4b) and three wiring relay areas are arranged on the surface of an insulating substrate. Each wiring layer and each wiring relay area constitutes a conductive path of the semiconductor device. A heat sink is attached to the back surface of the insulating substrate via a third metal pattern.

[0003] The semiconductor device disclosed in Patent Document 1 has parasitic capacitance between a specific wiring relay area and a heat sink. In this case, if there is a significant voltage change in the wiring relay area, a leakage current from the heat sink occurs. Depending on the magnitude of the leakage current, there is concern that noise may have a negative impact on the surrounding area of ​​the semiconductor device. Therefore, measures to suppress the leakage current from the semiconductor device are desired. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Laid-Open No. 2009-158787 Summary of the Invention [Problem to be solved by the invention]

[0005] In view of the above circumstances, an object of the present disclosure is to provide a semiconductor device that can reduce noise caused by leakage current. [Means for solving the problem]

[0006] The semiconductor device provided by the present disclosure includes a substrate having a main surface facing a thickness direction, a first wiring layer disposed on the main surface, a second wiring layer disposed on the main surface and spaced apart from the first wiring layer in a first direction perpendicular to the thickness direction, a first semiconductor element having a first main surface electrode and a first back surface electrode positioned opposite each other in the thickness direction, with the first back surface electrode bonded to the first wiring layer, and a second main surface electrode and a second back surface electrode positioned opposite each other in the thickness direction, with the second back surface electrode bonded to the first wiring layer. The semiconductor device includes a second semiconductor element having a surface electrode bonded to the second wiring layer, a conductive member spaced from the substrate in the thickness direction and bonded to the first main surface electrode and the second main surface electrode, a first gate terminal spaced from the first wiring layer, a second gate terminal spaced from the second wiring layer, a first detection terminal spaced from the first wiring layer and conductive to the first main surface electrode, a second detection terminal spaced from the second wiring layer and conductive to the second back surface electrode, and a capacitor bonded to the first wiring layer and the second wiring layer. The polarities of the first main surface electrode and the second main surface electrode are opposite to each other. The first semiconductor element has a first gate electrode conductive to the first gate terminal. The second semiconductor element has a second gate electrode conductive to the second gate terminal. The substrate includes an exposed portion located between the first wiring layer and the second wiring layer. The conductive member overlaps the exposed portion when viewed in the thickness direction. [Effects of the Invention]

[0007] According to the above configuration, it is possible to reduce noise caused by leakage current in the semiconductor device.

[0008] Other features and advantages of the present disclosure will become more apparent from the following detailed description taken in conjunction with the accompanying drawings. [Brief explanation of the drawings]

[0009] [Figure 1] FIG. 1 is a plan view of a semiconductor device according to a first embodiment. [Figure 2]FIG. 2 is a plan view corresponding to FIG. 1, seen through the sealing resin. [Figure 3] FIG. 3 is a plan view corresponding to FIG. 2, further showing the conductive members and the output terminals. [Figure 4] FIG. 2 is a bottom view of the semiconductor device shown in FIG. [Figure 5] FIG. 3 is a cross-sectional view taken along line VV in FIG. 2. [Figure 6] FIG. 6 is a cross-sectional view taken along line VI-VI in FIG. [Figure 7] FIG. 7 is a cross-sectional view taken along line VII-VII in FIG. [Figure 8] FIG. 8 is a cross-sectional view taken along line VIII-VIII in FIG. 2. [Figure 9] FIG. 3 is a partially enlarged view of FIG. 2. [Figure 10] FIG. 10 is a cross-sectional view taken along line XX in FIG. 9. [Figure 11] FIG. 10 is a cross-sectional view taken along line XI-XI in FIG. 9. [Figure 12] FIG. 10 is a cross-sectional view taken along line XII-XII in FIG. 9. [Figure 13] FIG. 8 is a partially enlarged view of FIG. [Figure 14] FIG. 9 is a partially enlarged view of FIG. 8. [Figure 15] 10 is a partially enlarged plan view of the semiconductor device according to the second embodiment, seen through the sealing resin. FIG. [Figure 16] FIG. 16 is a cross-sectional view taken along line XVI-XVI in FIG. [Figure 17] FIG. 17 is a cross-sectional view taken along line XVII-XVII in FIG. [Figure 18] FIG. 18 is a cross-sectional view taken along line XVIII-XVIII in FIG. [Figure 19] FIG. 10 is a partially enlarged plan view of the semiconductor device according to the third embodiment, seen through the sealing resin. [Figure 20] FIG. 10 is a partially enlarged plan view of the semiconductor device according to the fourth embodiment, seen through the sealing resin. [Figure 21] FIG. 10 is a partially enlarged plan view of the semiconductor device according to the fifth embodiment, seen through the sealing resin. [Figure 22]FIG. 22 is a cross-sectional view taken along line XXII-XXII in FIG. 21. [Figure 23] FIG. 23 is a cross-sectional view taken along line XXIII-XXIII in FIG. 21.

[0010] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present disclosure will be described with reference to the accompanying drawings.

[0011] 1 to 14, a semiconductor device A10 according to a first embodiment of the present disclosure will be described. The semiconductor device A10 includes a substrate 11, a first wiring layer 12, a second wiring layer 13, a first semiconductor element 21, a second semiconductor element 22, a pair of diodes 23, a capacitor 24, a conductive member 30, a first input terminal 41, a second input terminal 42, an output terminal 43, a sealing resin 60, and a heat sink 70. The semiconductor device A10 also includes a first gate wiring layer 141, a second gate wiring layer 142, a first detection wiring layer 151, a second detection wiring layer 152, a second gate electrode extension layer 162, a back electrode extension layer 17, a first gate terminal 441, a second gate terminal 442, a first detection terminal 451, a second detection terminal 452, a pair of gate wires 51, a pair of detection wires 52, a pair of first wires 53, and a pair of second wires 54. In FIG. 2, the sealing resin 60 is shown through. In Fig. 3, the conductive member 30 and the output terminal 43 are further seen through than in Fig. 2. In Fig. 2 and Fig. 3, the seen-through sealing resin 60 is shown by an imaginary line (two-dot chain line). In Fig. 3, the seen-through conductive member 30 and the output terminal 43 are shown by an imaginary line.

[0012] In describing the semiconductor device A10, for convenience, the direction perpendicular to the main surface 111 (described later) of the substrate 11 is referred to as the "thickness direction z." The thickness direction z corresponds to, for example, the thickness directions of the first wiring layer 12 and the second wiring layer 13. One direction perpendicular to the thickness direction z is referred to as the "first direction x." The direction perpendicular to both the thickness direction z and the first direction x is referred to as the "second direction y."

[0013] The semiconductor device A10 converts a DC power supply voltage applied to a first input terminal 41 and a second input terminal 42 into AC power using a first semiconductor element 21 and a second semiconductor element 22. The converted AC power is input to a power supply target such as a motor from an output terminal 43. The semiconductor device A10 forms part of a power conversion circuit such as an inverter.

[0014] As shown in FIGS. 5 and 7 , the substrate 11 supports the first wiring layer 12, the second wiring layer 13, the first gate wiring layer 141, the second gate wiring layer 142, the first detection wiring layer 151, the second detection wiring layer 152, the second gate electrode lead layer 162, the back electrode lead layer 17, and the sealing resin 60. Furthermore, as shown in FIGS. 7 and 8 , the substrate 11 supports the first gate terminal 441, the second gate terminal 442, the first detection terminal 451, and the second detection terminal 452. The substrate 11 has electrical insulation properties. Furthermore, the constituent material of the substrate 11 preferably has a relatively high thermal conductivity. For example, the substrate 11 is made of ceramic, such as aluminum nitride (AlN). The substrate 11 has a main surface 111 and a back surface 112 spaced apart from each other in the thickness direction z, and the back surface 112 faces the opposite side to the main surface 111. 5 to 8, the main surface 111 is in contact with the sealing resin 60. The back surface 112 is exposed from the sealing resin 60.

[0015] As shown in FIGS. 2, 3, and 7, the first wiring layer 12 is disposed on the main surface 111 of the substrate 11. The first wiring layer 12 has a first semiconductor element 21 and one of a pair of diodes 23 mounted thereon. The first wiring layer 12 is made of a material containing copper (Cu) or a copper alloy. When viewed in the thickness direction z, the first wiring layer 12 has a rectangular shape with its longer sides extending in the second direction y. When viewed in the thickness direction z, the first wiring layer 12 is located inward from the periphery of the substrate 11.

[0016] As shown in FIGS. 2, 3, and 8, the second wiring layer 13 is disposed on the main surface 111 of the substrate 11. The second wiring layer 13 carries the second semiconductor element 22 and the other diode 23 of the pair of diodes 23. The second wiring layer 13 is made of a material containing copper or a copper alloy. The second wiring layer 13 is spaced apart from the first wiring layer 12 in the first direction x. As viewed in the thickness direction z, the second wiring layer 13 has a rectangular shape with its long sides extending in the second direction y and with a notch cut out on the side where the second gate wiring layer 142 and the second detection wiring layer 152 are located in the first direction x. As viewed in the thickness direction z, the second wiring layer 13 is located inward from the periphery of the substrate 11.

[0017] 10 and 11, the thickness of each of the first wiring layer 12 and the second wiring layer 13 is greater than the thickness of the substrate 11. As shown in Figures 2 and 3, the substrate 11 includes an exposed portion 11A located between the first wiring layer 12 and the second wiring layer 13 when viewed in the thickness direction z. The exposed portion 11A extends along the second direction y.

[0018] As shown in FIGS. 2, 3, and 5, the first semiconductor elements 21 are bonded to the first wiring layer 12. The first semiconductor elements 21 are, for example, MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors). Alternatively, each of the first semiconductor elements 21 may be a field-effect transistor including a MISFET (Metal-Insulator-Semiconductor Field-Effect Transistor) or a bipolar transistor such as an IGBT (Insulated Gate Bipolar Transistor). The first semiconductor elements 21 include a compound semiconductor substrate. The compound semiconductor substrate has a composition including silicon carbide (SiC). That is, the compound semiconductor substrate contains silicon carbide (SiC). In the following description of the semiconductor device A10, the first semiconductor elements 21 are n-channel MOSFETs with a vertical structure.

[0019] As shown in FIGS. 9 and 10 , the first semiconductor element 21 has a first back surface electrode 211, a first main surface electrode 212, and a first gate electrode 213. The first back surface electrode 211 is disposed opposite the first wiring layer 12. A current corresponding to the power converted by the first semiconductor element 21 flows through the first back surface electrode 211. That is, the first back surface electrode 211 corresponds to the drain electrode of the first semiconductor element 21. The first back surface electrode 211 is bonded to the first wiring layer 12 by a first bonding layer 25. The first bonding layer 25 is conductive. The first bonding layer 25 is, for example, lead-free solder. Alternatively, the first bonding layer 25 may be a sintered metal containing silver (Ag) or the like. This allows the first back surface electrode 211 to be electrically connected to the first wiring layer 12.

[0020] As shown in FIG. 10 , the first principal surface electrode 212 is provided on the side of the substrate 11 facing the principal surface 111 in the thickness direction z. Therefore, the first back surface electrode 211 and the first principal surface electrode 212 are located on opposite sides of each other in the thickness direction z. A current corresponding to the power converted by the first semiconductor element 21 flows through the first principal surface electrode 212. That is, the first principal surface electrode 212 corresponds to the source electrode of the first semiconductor element 21. The first principal surface electrode 212 includes multiple metal plating layers. The first principal surface electrode 212 includes a nickel (Ni) plating layer and a gold (Au) plating layer laminated on the nickel plating layer. Alternatively, the first principal surface electrode 212 may include a nickel plating layer, a palladium (Pd) plating layer laminated on the nickel plating layer, and a gold plating layer laminated on the palladium plating layer.

[0021] 9 and 10 , in the semiconductor device A10, the first gate electrode 213 is located on the same side as the first main surface electrode 212 in the thickness direction z. A gate voltage for driving the first semiconductor element 21 is applied to the first gate electrode 213. The first semiconductor element 21 converts a current corresponding to the voltage applied to the first back surface electrode 211 based on the gate voltage. As shown in FIG. 9 , the area of ​​the first gate electrode 213 is smaller than the area of ​​the first main surface electrode 212 when viewed in the thickness direction z.

[0022] 2, 3, and 5, the second semiconductor element 22 is bonded to the second wiring layer 13. The second semiconductor element 22 is a transistor of the same type as the first semiconductor element 21. Therefore, in the semiconductor device A10, the second semiconductor element 22 is a MOSFET.

[0023] 9 and 11, the second semiconductor element 22 has a second back surface electrode 221, a second main surface electrode 222, and a second gate electrode 223. The second back surface electrode 221 is provided opposite the second wiring layer 13. A current corresponding to the power converted by the second semiconductor element 22 flows through the second back surface electrode 221. In other words, the second back surface electrode 221 corresponds to the source electrode of the second semiconductor element 22. The second back surface electrode 221 is bonded to the second wiring layer 13 by a first bonding layer 25. As a result, the second back surface electrode 221 is electrically connected to the second wiring layer 13.

[0024] 11 , the second principal surface electrode 222 is provided on the side facing the principal surface 111 of the substrate 11 in the thickness direction z. Therefore, the second back surface electrode 221 and the second principal surface electrode 222 are located on opposite sides of each other in the thickness direction z. A current corresponding to the power converted by the second semiconductor element 22 flows through the second principal surface electrode 222. In other words, the second principal surface electrode 222 corresponds to the drain electrode of the second semiconductor element 22. The second principal surface electrode 222 includes a plurality of metal plating layers, similar to the first principal surface electrode 212 of the first semiconductor element 21. The configuration of the plurality of metal plating layers is the same as the configuration of the plurality of metal plating layers included in the first principal surface electrode 212.

[0025] 9 and 11, in the semiconductor device A10, the second gate electrode 223 is located on the same side as the second back surface electrode 221 in the thickness direction z. A gate voltage for driving the second semiconductor element 22 is applied to the second gate electrode 223. The second semiconductor element 22 converts a current corresponding to the voltage applied to the second main surface electrode 222 based on the gate voltage. As shown in FIG. 9, the area of ​​the second gate electrode 223 is smaller than the area of ​​the second back surface electrode 221 when viewed in the thickness direction z.

[0026] In the semiconductor device A10, the structure of the second semiconductor element 22 is the same as the structure of the first semiconductor element 21 when it is inverted around a direction perpendicular to the thickness direction z. That is, the second semiconductor element 22 is obtained by flip-chip bonding the first semiconductor element 21 to the second wiring layer 13. The first principal surface electrode 212 of the first semiconductor element 21 and the second principal surface electrode 222 of the second semiconductor element 22 have mutually opposite polarities.

[0027] As shown in FIGS. 2, 3, 7, and 8, the pair of diodes 23 are individually bonded to the first wiring layer 12 and the second wiring layer 13. The pair of diodes 23 includes a first diode 23A and a second diode 23B. The first diode 23A is bonded to the first wiring layer 12. The second diode 23B is bonded to the second wiring layer 13. The pair of diodes 23 are, for example, Schottky barrier diodes. The first diode 23A is connected in parallel to the first semiconductor element 21. The second diode 23B is connected in parallel to the second semiconductor element 22. The pair of diodes 23 are so-called freewheeling diodes, which means that when a reverse bias is applied to at least one of the first semiconductor element 21 and the second semiconductor element 22, a current flows through the diode 23 connected in parallel to the first semiconductor element 21 and the second semiconductor element 22, rather than through each of them. 13 and 14 , each of the pair of diodes 23 has an anode electrode 231 and a cathode electrode 232. The anode electrode 231 and the cathode electrode 232 are located on opposite sides of each other in the thickness direction z. In the semiconductor device A10, if each of the first semiconductor element 21 and the second semiconductor element 22 is a MOSFET, a diode replacing the pair of diodes 23 may be built into each of the first semiconductor element 21 and the second semiconductor element 22. In this case, the pair of diodes 23 is unnecessary.

[0028] 13 , in the first diode 23A, the anode electrode 231 is provided on the side facing the main surface 111 of the substrate 11 in the thickness direction z. Therefore, the cathode electrode 232 of the first diode 23A is provided facing the first wiring layer 12. The cathode electrode 232 of the first diode 23A is joined to the first wiring layer 12 by a first bonding layer 25. As a result, the cathode electrode 232 of the first diode 23A is electrically connected to the first wiring layer 12.

[0029] 14 , in the second diode 23B, the cathode electrode 232 is provided on the side facing the main surface 111 of the substrate 11 in the thickness direction z. Therefore, the anode electrode 231 of the second diode 23B is provided facing the second wiring layer 13. The anode electrode 231 of the second diode 23B is joined to the second wiring layer 13 by the first joining layer 25. As a result, the anode electrode 231 of the second diode 23B is electrically connected to the second wiring layer 13.

[0030] As shown in FIGS. 3 and 6 , the capacitor 24 is bonded to the first wiring layer 12 and the second wiring layer 13. When viewed in the thickness direction z, the capacitor 24 overlaps the exposed portion 11A of the substrate 11. The capacitor 24 is, for example, a ceramic capacitor. The capacitor 24 has a pair of electrodes 241. The pair of electrodes 241 are spaced apart from each other in the first direction x. One of the pair of electrodes 241 is bonded to the first wiring layer 12 by a first bonding layer 25. The other of the pair of electrodes 241 is bonded to the second wiring layer 13 by the first bonding layer 25. This provides electrical continuity between the capacitor 24 and the first wiring layer 12 and the second wiring layer 13.

[0031] As shown in FIGS. 2, 3, and 5, the first gate wiring layer 141 is disposed on the main surface 111 of the substrate 11. The first gate wiring layer 141 is located on the opposite side of the first wiring layer 12 from the second wiring layer 13 in the first direction x. The first gate wiring layer 141 is electrically connected to the first gate electrode 213 of the first semiconductor element 21. The first gate wiring layer 141 extends along the second direction y. The first gate wiring layer 141 is made of a material containing copper or a copper alloy.

[0032] As shown in FIGS. 2 and 3 , the first gate terminal 441 is located on one side of the substrate 11 in the first direction x. The first gate terminal 441 is electrically connected to the first gate wiring layer 141. The first gate terminal 441 is a metal lead made of a material containing copper or a copper alloy. As shown in FIGS. 1 and 6 , a portion of the first gate terminal 441 is covered with the sealing resin 60. When viewed in the second direction y, the first gate terminal 441 is L-shaped. As shown in FIG. 6 , the first gate terminal 441 includes a portion that stands up in the thickness direction z. This portion is exposed from the sealing resin 60. A gate voltage for driving the first semiconductor element 21 is applied to the first gate terminal 441.

[0033] As shown in FIGS. 2, 3, and 5, the second gate wiring layer 142 is disposed on the main surface 111 of the substrate 11. The second gate wiring layer 142 is located on the opposite side of the second wiring layer 13 from the first wiring layer 12 in the first direction x. The second gate wiring layer 142 is electrically connected to the second gate electrode 223 of the second semiconductor element 22. The second gate wiring layer 142 extends along the second direction y. The second gate wiring layer 142 is made of a material containing copper or a copper alloy.

[0034] As shown in FIGS. 2, 3, and 9, the second gate electrode lead layer 162 is disposed on the main surface 111 of the substrate 11. The second gate electrode lead layer 162 is located in the notched portion of the second wiring layer 13. When viewed in the thickness direction z, the second semiconductor element 22 overlaps the second gate electrode lead layer 162. The second gate electrode lead layer 162 is electrically connected to the second gate wiring layer 142. The second gate electrode lead layer 162 extends along the first direction x. The second gate electrode lead layer 162 is made of a material containing copper or a copper alloy. As shown in FIG. 11, the second gate electrode 223 of the second semiconductor element 22 is bonded to the second gate electrode lead layer 162 by a third bonding layer 27. The third bonding layer 27 is conductive. The third bonding layer 27 is, for example, lead-free solder. Alternatively, the first bonding layer 25 may be a sintered metal containing silver or the like. As a result, the second gate electrode 223 is electrically connected to the second gate electrode leading layer 162 .

[0035] As shown in FIGS. 2 and 3 , the second gate terminal 442 is located on the opposite side of the substrate 11 from the first gate terminal 441 in the first direction x. The second gate terminal 442 is electrically connected to the second gate wiring layer 142. The second gate terminal 442 is a metal lead made of a material containing copper or a copper alloy. As shown in FIGS. 1 and 6 , a portion of the second gate terminal 442 is covered with the sealing resin 60. When viewed in the second direction y, the second gate terminal 442 is L-shaped. As shown in FIG. 6 , the second gate terminal 442 includes a portion that stands up in the thickness direction z. This portion is exposed from the sealing resin 60. A gate voltage for driving the second semiconductor element 22 is applied to the second gate terminal 442.

[0036] 2, 3, and 6, the pair of first wires 53 are individually bonded to the first gate terminal 441 and the second gate terminal 442, and to the first gate wiring layer 141 and the second gate wiring layer 142. As a result, the first gate terminal 441 is electrically connected to the first gate wiring layer 141, and the second gate terminal 442 is electrically connected to the second gate wiring layer 142. The composition of each of the pair of first wires 53 includes gold. Alternatively, the composition of each of the pair of first wires 53 may include copper or aluminum (Al).

[0037] As shown in FIGS. 2, 3, and 5, the first detection wiring layer 151 is disposed on the main surface 111 of the substrate 11. The first detection wiring layer 151 is located next to the first gate wiring layer 141 in the first direction x. The first detection wiring layer 151 is electrically connected to the first main surface electrode 212 of the first semiconductor element 21. The first detection wiring layer 151 extends along the second direction y. The first detection wiring layer 151 is made of a material containing copper or a copper alloy.

[0038] As shown in FIGS. 2 and 3 , the first detection terminal 451 is located on the same side of the substrate 11 as the first gate terminal 441 in the first direction x and adjacent to the first gate terminal 441 in the second direction y. Therefore, the first detection terminal 451 is located closer to the first gate terminal 441 than the second gate terminal 442. The first detection terminal 451 is electrically connected to the first detection wiring layer 151. The first detection terminal 451 is a metal lead made of a material containing copper or a copper alloy. As shown in FIGS. 1 and 5 , a portion of the first detection terminal 451 is covered with the sealing resin 60. When viewed in the second direction y, the first detection terminal 451 is L-shaped. As shown in FIG. 5 , the first detection terminal 451 includes a portion that stands up in the thickness direction z. This portion is exposed from the sealing resin 60. A voltage corresponding to the current flowing through the first principal surface electrode 212 of the first semiconductor element 21 is applied to the first detection terminal 451.

[0039] As shown in FIGS. 2, 3, and 5, the second detection wiring layer 152 is disposed on the main surface 111 of the substrate 11. The second detection wiring layer 152 is located adjacent to the second gate wiring layer 142 in the first direction x. The second detection wiring layer 152 is electrically connected to the second back surface electrode 221 of the second semiconductor element 22. The second detection wiring layer 152 extends along the second direction y. The second detection wiring layer 152 is made of a material containing copper or a copper alloy.

[0040] As shown in FIGS. 2, 3, and 9, the back surface electrode lead layer 17 is disposed on the main surface 111 of the substrate 11. The back surface electrode lead layer 17 is located in the notched portion of the second wiring layer 13 and is located adjacent to the second gate electrode lead layer 162 in the second direction y. As viewed in the thickness direction z, the second semiconductor element 22 overlaps the back surface electrode lead layer 17. The back surface electrode lead layer 17 is electrically connected to the second detection wiring layer 152. The back surface electrode lead layer 17 extends along the first direction x. The back surface electrode lead layer 17 is made of a material containing copper or a copper alloy. As shown in FIG. 12, the second back surface electrode 221 of the second semiconductor element 22 is bonded to the back surface electrode lead layer 17 by a third bonding layer 27. As a result, the second back surface electrode 221 is electrically connected to the back surface electrode lead layer 17.

[0041] As shown in FIGS. 2 and 3 , the second detection terminal 452 is located on the same side of the substrate 11 as the second gate terminal 442 in the first direction x and adjacent to the second gate terminal 442 in the second direction y. Therefore, the second detection terminal 452 is located closer to the second gate terminal 442 than the first gate terminal 441. The second detection terminal 452 is electrically connected to the second detection wiring layer 152. The second detection terminal 452 is a metal lead made of a material containing copper or a copper alloy. As shown in FIGS. 1 and 5 , a portion of the second detection terminal 452 is covered with the sealing resin 60. When viewed in the second direction y, the second detection terminal 452 is L-shaped. As shown in FIG. 5 , the second detection terminal 452 includes a portion that stands up in the thickness direction z. This portion is exposed from the sealing resin 60. A voltage corresponding to the current flowing through the second back surface electrode 221 of the second semiconductor element 22 is applied to the second detection terminal 452.

[0042] 2, 3, and 5, the pair of second wires 54 are individually bonded to the first detection terminal 451 and the second detection terminal 452, and to the first detection wiring layer 151 and the second detection wiring layer 152. As a result, the first detection terminal 451 is electrically connected to the first detection wiring layer 151, and the second detection terminal 452 is electrically connected to the second detection wiring layer 152. Each of the pair of second wires 54 contains gold. Alternatively, each of the pair of second wires 54 may contain copper or aluminum.

[0043] As shown in FIGS. 5 to 8, the conductive member 30 is spaced from the substrate 11 in the thickness direction z toward the side toward which the main surface 111 faces. The conductive member 30 is bonded to the first main surface electrode 212 of the first semiconductor element 21 and the second main surface electrode 222 of the second semiconductor element 22. The conductive member 30 is also bonded to the anode electrode 231 of the first diode 23A and the cathode electrode 232 of the second diode 23B. The conductive member 30 is made of a single lead frame. The lead frame is made of a material containing, for example, copper or a copper alloy. As shown in FIG. 2, the conductive member 30 overlaps the exposed portion 11A of the substrate 11 when viewed in the thickness direction z.

[0044] 2 and 5 to 8, the conductive member 30 has a base 31, a pair of first joint portions 32, and a pair of second joint portions 33. The base 31 extends in the second direction y. When viewed in the thickness direction z, the base 31 overlaps the exposed portion 11A of the substrate 11, the first wiring layer 12, the second wiring layer 13, and the capacitor 24.

[0045] As shown in FIGS. 2, 5, and 9, the pair of first bonding portions 32 are connected to both ends of the base portion 31 in the first direction x. As shown in FIGS. 9 to 11, the pair of first bonding portions 32 are individually bonded to the first principal surface electrode 212 of the first semiconductor element 21 and the second principal surface electrode 222 of the second semiconductor element 22 by the second bonding layer 26. The second bonding layer 26 is conductive. The second bonding layer 26 is, for example, lead-free solder. Alternatively, the second bonding layer 26 may be a sintered metal containing silver or the like. This provides electrical continuity between the first principal surface electrode 212 and the second principal surface electrode 222 and the conductive member 30.

[0046] 2, the pair of second joints 33 are connected to both ends of the base 31 in the first direction x and are spaced apart from the pair of first joints 32 in the second direction y. As shown in FIGS. 13 and 14, the pair of second joints 33 are individually bonded to the anode electrode 231 of the first diode 23A and the cathode electrode 232 of the second diode 23B by the second joint layer 26. As a result, the anode electrode 231 of the first diode 23A and the cathode electrode 232 of the second diode 23B are electrically connected to the conductive member 30.

[0047] As shown in FIGS. 1 to 3, the first input terminal 41 is located on one side of the substrate 11 in the second direction y. The first input terminal 41 is electrically connected to the first wiring layer 12. As shown in FIG. 7, in the semiconductor device A10, the first input terminal 41 is joined to the first wiring layer 12. The first input terminal 41 is a metal plate made of a material containing copper or a copper alloy. A portion of the first input terminal 41 is covered with a sealing resin 60. The first input terminal 41 has a first mounting hole 411 that penetrates in the thickness direction z. The first mounting hole 411 is exposed from the sealing resin 60. The first input terminal 41 is a P terminal (positive electrode) to which a DC power supply voltage to be converted into power is applied.

[0048] As shown in FIGS. 1 to 3, the second input terminal 42 is located on the same side as the first input terminal 41 with respect to the substrate 11 in the second direction y (one side in the second direction y). The second input terminal 42 is spaced apart from the first input terminal 41 in the first direction x. The second input terminal 42 is electrically connected to the second wiring layer 13. As shown in FIG. 8, in the semiconductor device A10, the second input terminal 42 is joined to the second wiring layer 13. The second input terminal 42 is a metal plate made of a material containing copper or a copper alloy. A portion of the second input terminal 42 is covered with sealing resin 60. The second input terminal 42 has a second mounting hole 421 penetrating in the thickness direction z. The second mounting hole 421 is exposed from the sealing resin 60. The second input terminal 42 is an N-terminal (negative electrode) to which a DC power supply voltage to be converted is applied.

[0049] As shown in FIGS. 1 and 2 , the output terminal 43 is located on the opposite side of the substrate 11 in the second direction y from the first input terminal 41 and the second input terminal 42 (the other side in the second direction y). As shown in FIG. 7 , the output terminal 43 is spaced from the substrate 11 in the thickness direction z toward the side toward which the main surface 111 faces. The output terminal 43 is electrically connected to the conductive member 30. The output terminal 43 is joined to the base 31 of the conductive member 30. The output terminal 43 is a metal plate made of a material containing copper or a copper alloy. A portion of the output terminal 43 is covered with a sealing resin 60. The output terminal 43 has a third mounting hole 431 penetrating in the thickness direction z. The third mounting hole 431 is exposed from the sealing resin 60. The output terminal 43 outputs AC power converted by the first semiconductor element 21 and the second semiconductor element 22.

[0050] As shown in FIGS. 2, 3, and 9, one of the pair of gate wires 51 is bonded to the first gate electrode 213 of the first semiconductor element 21 and the first gate wiring layer 141. As a result, the first gate electrode 213 is electrically connected to the first gate wiring layer 141 and to the first gate terminal 441 via one of the pair of first wires 53. As shown in FIGS. 2, 3, and 9, the other of the pair of gate wires 51 is bonded to the second gate electrode leading layer 162 and the second gate wiring layer 142. As a result, the second gate electrode 223 of the second semiconductor element 22 is electrically connected to the second gate wiring layer 142 and to the second gate terminal 442 via the other of the pair of first wires 53. Each of the pair of gate wires 51 contains gold. Alternatively, each of the pair of gate wires 51 may contain aluminum or copper.

[0051] As shown in FIGS. 2, 3, and 9, one of the pair of detection wires 52 is bonded to the first principal surface electrode 212 of the first semiconductor element 21 and the first detection wiring layer 151. As a result, the first principal surface electrode 212 is electrically connected to the first detection wiring layer 151 and to the first detection terminal 451 via one of the pair of second wires 54. As shown in FIGS. 2, 3, and 9, the other of the pair of detection wires 52 is bonded to the back surface electrode lead layer 17 and the second detection wiring layer 152. As a result, the second back surface electrode 221 of the second semiconductor element 22 is electrically connected to the second detection wiring layer 152 and to the second detection terminal 452 via the other of the pair of second wires 54. Each of the plurality of detection wires 52 contains gold. Alternatively, each of the plurality of detection wires 52 may contain aluminum or copper.

[0052] As shown in FIG. 1 and FIGS. 5 to 8 , the sealing resin 60 covers the first wiring layer 12, the second wiring layer 13, the first gate wiring layer 141, the second gate wiring layer 142, the first detection wiring layer 151, the second detection wiring layer 152, the second gate electrode lead layer 162, the back electrode lead layer 17, the first semiconductor element 21, the second semiconductor element 22, the pair of diodes 23, the capacitor 24, and the conductive member 30. The sealing resin 60 also covers a portion of each of the substrate 11, the first input terminal 41, the second input terminal 42, the output terminal 43, the first gate terminal 441, the second gate terminal 442, the first detection terminal 451, and the second detection terminal 452. The sealing resin 60 has electrical insulation properties. The sealing resin 60 is made of a material containing, for example, black epoxy resin. The sealing resin 60 includes a portion sandwiched between the exposed portion 11A of the substrate 11 and the base portion 31 of the conductive member 30 in the thickness direction z.

[0053] As shown in FIGS. 1, 4, and 5 to 8, the sealing resin 60 has a top surface 61, a bottom surface 62, a pair of first side surfaces 63, and a pair of second side surfaces 64. The top surface 61 faces the same side as the main surface 111 of the substrate 11 in the thickness direction z. The area of ​​the top surface 61 is larger than the area of ​​the main surface 111. The bottom surface 62 faces the opposite side to the top surface 61 in the thickness direction z. The back surface 112 of the substrate 11 is exposed from the bottom surface 62. The pair of first side surfaces 63 are spaced apart from each other in the first direction x and are connected to the top surface 61 and the bottom surface 62. A first gate terminal 441 and a first detection terminal 451 are exposed from one of the pair of first side surfaces 63. A second gate terminal 442 and a second detection terminal 452 are exposed from the other first side surface 63 of the pair of first side surfaces 63. The pair of second side surfaces 64 are spaced apart from each other in the second direction y and are connected to the top surface 61 and the bottom surface 62. The first input terminal 41 and the second input terminal 42 are exposed from one second side surface 64 of the pair of second side surfaces 64. The output terminal 43 is exposed from the other second side surface 64 of the pair of second side surfaces 64.

[0054] 4 to 8, the heat sink 70 is bonded to the rear surface 112 of the substrate 11. As a result, the substrate 11 is located between the heat sink 70 and the first wiring layer 12, the second wiring layer 13, and the conductive member 30 in the thickness direction z. The heat sink 70 is made of a material containing aluminum, for example.

[0055] Next, the effects of the semiconductor device A10 will be described.

[0056] The semiconductor device A10 includes a conductive member 30 spaced apart from the substrate 11 on the side toward which the principal surface 111 faces in the thickness direction z. The conductive member 30 is bonded to a first principal surface electrode 212 of the first semiconductor element 21 and a second principal surface electrode 222 of the second semiconductor element 22. The first principal surface electrode 212 and the second principal surface electrode 222 have opposite polarities. The substrate 11 includes an exposed portion 11A located between the first wiring layer 12 and the second wiring layer 13 as viewed in the thickness direction z. The conductive member 30 overlaps the exposed portion 11A as viewed in the thickness direction z. This increases the distance in the thickness direction z from the exposed portion 11A to the conductive member 30. For example, if the heat sink 70 is used as a ground electrode, the parasitic capacitance of the semiconductor device A10 across the conductive member 30 and the substrate 11 is inversely proportional to the distance. Therefore, the parasitic capacitance decreases as the distance increases. This reduces the charge stored in the conductive member 30 due to switching of the first semiconductor element 21 and the second semiconductor element 22, thereby suppressing leakage current from the semiconductor device A10. Therefore, the semiconductor device A10 can reduce noise caused by leakage current from the device.

[0057] The semiconductor device A10 further includes a second gate electrode extension layer 162 disposed on the main surface 111 of the substrate 11 and electrically connected to the second gate wiring layer 142. The second gate electrode 223 of the second semiconductor element 22 is located on the same side as the second back surface electrode 221 in the thickness direction z. The second gate electrode 223 is bonded to the second gate electrode extension layer 162. This allows the first main surface electrode 212 of the first semiconductor element 21 and the second main surface electrode 222 of the second semiconductor element 22 to have opposite polarities without impeding the operation of the second semiconductor element 22. This enables mutual conduction between the first main surface electrode 212 and the second main surface electrode 222 via the conductive member 30.

[0058] The conductive member 30 has a base 31 extending in the second direction y and a pair of joints (first joints 32) connected to both ends of the base 31 in the first direction x. By making the dimensions of each of the pair of joints approximately the same, it is possible to reduce the difference in the magnitude of inductance from the first principal surface electrode 212 of the first semiconductor element 21 to the base 31 and the magnitude of inductance from the second principal surface electrode 222 of the second semiconductor element 22 to the base 31. This makes it possible to reduce the bias in power loss from the output terminal 43 to the first semiconductor element 21 and the second semiconductor element 22.

[0059] The conductive member 30 can shorten the length of the conductive path between the first principal surface electrode 212 of the first semiconductor element 21 and the second principal surface electrode 222 of the second semiconductor element 22 compared to conventional cases. This can reduce the inductance and parasitic resistance applied to the conductive member 30.

[0060] The semiconductor device A10 further includes a sealing resin 60 that covers the conductive member 30. The sealing resin 60 includes a portion that is sandwiched between the exposed portion 11A of the substrate 11 and the base portion 31 of the conductive member 30 in the thickness direction z. This makes it possible for the sealing resin 60 to more stably hold the conductive member 30, and further reduces the parasitic capacitance of the semiconductor device A10 across the conductive member 30 and the substrate 11.

[0061] The semiconductor device A10 further includes a capacitor 24 bonded to the first wiring layer 12 and the second wiring layer 13. This provides the semiconductor device A10 with a snubber circuit for reducing surge voltages applied to the first input terminal 41 and the second input terminal 42, thereby protecting the first semiconductor element 21 and the second semiconductor element 22 from the surge voltages. In this case, by configuring the capacitor 24 to overlap the exposed portion 11A of the substrate 11 when viewed in the thickness direction z, it is possible to avoid an increase in the size of the semiconductor device A10.

[0062] The thickness of each of the first wiring layer 12 and the second wiring layer 13 is greater than the thickness of the substrate 11. This allows the heat conduction efficiency in each of the first wiring layer 12 and the second wiring layer 13 to be improved in a direction perpendicular to the thickness direction z, which contributes to improving the heat dissipation performance of the semiconductor device A10.

[0063] A semiconductor device A20 according to a second embodiment of the present disclosure will be described with reference to Figures 15 to 18. In these figures, elements that are the same as or similar to those in the semiconductor device A10 described above are given the same reference numerals, and duplicated explanations will be omitted. Here, Figure 15 shows a perspective view through the sealing resin 60 for ease of understanding.

[0064] The semiconductor device A20 differs from the semiconductor device A10 described above in the configuration of the first semiconductor element 21, the second semiconductor element 22, the pair of gate wires 51, and the pair of detection wires 52, and in that it has a first gate electrode lead layer 161 instead of a second gate electrode lead layer 162.

[0065] As shown in FIGS. 15 and 16 , the first semiconductor element 21 further includes a first detection electrode 214, a first element body 215, a plurality of first redistribution layers 216, and a first protective layer 217. The first element body 215 is the same type of transistor as the first semiconductor element 21 of the semiconductor device A10 and has the same structure as the first semiconductor element 21. The first element body 215 includes a first electrode 215A, a second electrode 215B, and a gate electrode 215C. The first electrode 215A corresponds to the first back surface electrode 211 and the drain electrode of the first semiconductor element 21 of the semiconductor device A10. The second electrode 215B corresponds to the first main surface electrode 212 and the source electrode of the first semiconductor element 21 of the semiconductor device A10. The gate electrode 215C corresponds to the first gate electrode 213 of the first semiconductor element 21 of the semiconductor device A10.

[0066] 16 , the multiple first redistribution layers 216 form conductive paths between the first electrode 215A, the second electrode 215B, and the gate electrode 215C and the first back surface electrode 211, the first main surface electrode 212, the first gate electrode 213, and the first detection electrode 214. The multiple first redistribution layers 216 electrically connect the first electrode 215A to the first back surface electrode 211. The second electrode 215B electrically connects the first main surface electrode 212 and the first detection electrode 214. The gate electrode 215C electrically connects to the first gate electrode 213. In the semiconductor device A20, the first gate electrode 213 is located on the same side as the first back surface electrode 211 in the thickness direction z. As viewed in the thickness direction z, the first gate electrode 213 is located outward of the first element body 215. When viewed in the thickness direction z, the area of ​​the first principal surface electrode 212 is larger than the area of ​​the second electrode 215B.

[0067] 15, the first detection electrode 214 is located on the same side in the thickness direction z as the first principal surface electrode 212. A voltage with the same potential as that of the first principal surface electrode 212 is applied to the first detection electrode 214.

[0068] 16, the first protective layer 217 covers the first element body 215 and the multiple first redistribution layers 216. The first back surface electrode 211, the first main surface electrode 212, the first gate electrode 213, and the first detection electrode 214 are exposed from the first protective layer 217. The first protective layer 217 is made of a material containing, for example, polyimide.

[0069] As shown in FIG. 15 , the first gate electrode extension layer 161 is disposed on the main surface 111 of the substrate 11. When viewed in the thickness direction z, the first semiconductor element 21 overlaps the first gate electrode extension layer 161. The first gate electrode extension layer 161 is electrically connected to the first gate wiring layer 141. The first gate electrode extension layer 161 extends along the first direction x. The first gate electrode extension layer 161 is made of a material containing copper or a copper alloy. As shown in FIG. 16 , the first gate electrode 213 of the first semiconductor element 21 is bonded to the first gate electrode extension layer 161 by a third bonding layer 27. As a result, the first gate electrode 213 is electrically connected to the first gate electrode extension layer 161.

[0070] As shown in FIGS. 15, 17, and 18, the second semiconductor element 22 further includes a second detection electrode 224, a second element body 225, multiple second redistribution layers 226, and a second protective layer 227. The second element body 225 is the same type of transistor as the second semiconductor element 22 of the semiconductor device A10 and has the same structure as the second semiconductor element 22. The second element body 225 includes a first electrode 225A, a second electrode 225B, and a gate electrode 225C. The first electrode 225A corresponds to the second main surface electrode 222 and the drain electrode of the second semiconductor element 22 of the semiconductor device A10. The second electrode 225B corresponds to the second back surface electrode 221 and the source electrode of the second semiconductor element 22 of the semiconductor device A10. The gate electrode 225C corresponds to the second gate electrode 223 of the second semiconductor element 22 of the semiconductor device A10.

[0071] 17 and 18, the multiple second redistribution layers 226 form conductive paths between the first electrode 225A, the second electrode 225B, and the gate electrode 225C and the second back surface electrode 221, the second main surface electrode 222, the second gate electrode 223, and the second detection electrode 224. The multiple second redistribution layers 226 electrically connect the first electrode 225A to the second main surface electrode 222. The second electrode 225B electrically connects to the second back surface electrode 221 and the second detection electrode 224. The gate electrode 225C electrically connects to the second gate electrode 223. In the semiconductor device A20, the second gate electrode 223 is located on the same side as the second main surface electrode 222 in the thickness direction z. As viewed in the thickness direction z, the second gate electrode 223 is located outward of the second element body 225. When viewed in the thickness direction z, the area of ​​the second back surface electrode 221 is larger than the area of ​​the second electrode 225B.

[0072] 15 and 18, the second detection electrode 224 is located on the same side as the second back surface electrode 221 in the thickness direction z. A voltage of the same potential as that of the second back surface electrode 221 is applied to the second detection electrode 224. As shown in FIG. 18, the second detection electrode 224 is joined to the back surface electrode leading layer 17 by a third joining layer 27. As a result, the second detection electrode 224 is electrically connected to the back surface electrode leading layer 17.

[0073] 17 and 18, the second protective layer 227 covers the second element body 225 and the multiple second redistribution layers 226. The second back surface electrode 221, the second main surface electrode 222, the second gate electrode 223, and the second detection electrode 224 are exposed from the second protective layer 227. The second protective layer 227 is made of a material containing, for example, polyimide.

[0074] 15, one of the pair of gate wires 51 is bonded to the first gate electrode leading layer 161 and the first gate wiring layer 141. As a result, the first gate electrode 213 of the first semiconductor element 21 is electrically connected to the first gate terminal 441. As shown in FIG. 15, the other of the pair of gate wires 51 is bonded to the second gate electrode 223 of the second semiconductor element 22 and the second gate wiring layer 142. As a result, the second gate electrode 223 is electrically connected to the second gate terminal 442.

[0075] 15, one of the pair of detection wires 52 is joined to the first detection electrode 214 of the first semiconductor element 21 and the first detection wiring layer 151. As a result, the first principal surface electrode 212 of the first semiconductor element 21 is electrically connected to the first detection terminal 451. As shown in FIG. 15, the other of the pair of detection wires 52 is joined to the back surface electrode leading layer 17 and the second detection wiring layer 152. As a result, the second back surface electrode 221 of the second semiconductor element 22 is electrically connected to the second detection terminal 452.

[0076] Next, the effects of the semiconductor device A20 will be described.

[0077] The semiconductor device A20 includes a conductive member 30 spaced apart from the substrate 11 on the side toward which the main surface 111 faces in the thickness direction z. The conductive member 30 is bonded to a first main surface electrode 212 of the first semiconductor element 21 and a second main surface electrode 222 of the second semiconductor element 22. The first main surface electrode 212 and the second main surface electrode 222 have opposite polarities. The substrate 11 includes an exposed portion 11A located between the first wiring layer 12 and the second wiring layer 13 as viewed in the thickness direction z. The conductive member 30 overlaps the exposed portion 11A as viewed in the thickness direction z. Therefore, the semiconductor device A20 also makes it possible to reduce noise caused by leakage current from the device.

[0078] In the semiconductor device A20, the second gate electrode 223 of the second semiconductor element 22 is located on the same side in the thickness direction z as the second main surface electrode 222. This makes it unnecessary to provide the second gate electrode leading layer 162.

[0079] In the semiconductor device A20, the first semiconductor element 21 has a first element body 215 and a plurality of first redistribution layers 216. This allows the area of ​​the first principal surface electrode 212 of the first semiconductor element 21 to be increased when viewed in the thickness direction z. This contributes to increasing the bonding strength of the conductive member 30 to the first principal surface electrode 212 and improving the efficiency of heat conduction from the first principal surface electrode 212 to the conductive member 30.

[0080] In the semiconductor device A20, the second semiconductor element 22 has a second element body 225 and a second redistribution layer 226. This allows the area of ​​the second back surface electrode 221 of the second semiconductor element 22 to be increased when viewed in the thickness direction z. This contributes to an increase in the bonding strength of the second back surface electrode 221 to the second wiring layer 13 and an improvement in the efficiency of heat conduction from the second back surface electrode 221 to the second wiring layer 13.

[0081] A semiconductor device A30 according to a third embodiment of the present disclosure will be described with reference to Fig. 19. In these figures, elements that are the same as or similar to those in the semiconductor device A10 described above are given the same reference numerals, and duplicated explanations will be omitted. For ease of understanding, Fig. 19 is viewed through the sealing resin 60.

[0082] In the semiconductor device A30, the configuration of the second semiconductor element 22 differs from that of the semiconductor device A10 described above.

[0083] 19, the configuration of the first semiconductor element 21 is the same as the configuration of the first semiconductor element 21 of the semiconductor device A10. Therefore, in the semiconductor device A30, the first gate electrode 213 of the first semiconductor element 21 is located on the same side as the first main surface electrode 212 in the thickness direction z.

[0084] 19, the configuration of the second semiconductor element 22 is the same as the configuration of the second semiconductor element 22 of the semiconductor device A20. Therefore, in the semiconductor device A30, the second gate electrode 223 of the second semiconductor element 22 is located on the same side as the second main surface electrode 222 in the thickness direction z.

[0085] Next, the effects of the semiconductor device A30 will be described.

[0086] The semiconductor device A30 includes a conductive member 30 spaced apart from the substrate 11 on the side toward which the main surface 111 faces in the thickness direction z. The conductive member 30 is bonded to a first main surface electrode 212 of the first semiconductor element 21 and a second main surface electrode 222 of the second semiconductor element 22. The first main surface electrode 212 and the second main surface electrode 222 have opposite polarities. The substrate 11 includes an exposed portion 11A located between the first wiring layer 12 and the second wiring layer 13 as viewed in the thickness direction z. The conductive member 30 overlaps the exposed portion 11A as viewed in the thickness direction z. Therefore, the semiconductor device A30 also makes it possible to reduce noise caused by leakage current from the device.

[0087] In the semiconductor device A30, the first gate electrode 213 of the first semiconductor element 21 is located on the same side as the first main surface electrode 212 in the thickness direction z. This eliminates the need to provide the first gate electrode extension layer 161. Furthermore, in the semiconductor device A30, the second gate electrode 223 of the second semiconductor element 22 is located on the same side as the second main surface electrode 222 in the thickness direction z. This eliminates the need to provide the second gate electrode extension layer 162.

[0088] A semiconductor device A40 according to a fourth embodiment of the present disclosure will be described with reference to Fig. 20. In these figures, elements that are the same as or similar to those in the semiconductor device A10 described above are given the same reference numerals, and duplicated explanations will be omitted. For ease of understanding, Fig. 20 shows a view through the sealing resin 60.

[0089] In the semiconductor device A40, the configuration of the first semiconductor element 21 differs from the configuration of the semiconductor device A10 described above.

[0090] 20, the configuration of the first semiconductor element 21 is the same as the configuration of the first semiconductor element 21 of the semiconductor device A20. Therefore, in the semiconductor device A40, the first gate electrode 213 of the first semiconductor element 21 is located on the same side as the first back surface electrode 211 in the thickness direction z. Therefore, in the semiconductor device A40, the arrangement of the first gate electrode extraction layer 161 is essential.

[0091] 20, the configuration of the second semiconductor element 22 is the same as the configuration of the second semiconductor element 22 of the semiconductor device A10. Therefore, in the semiconductor device A40, the second gate electrode 223 of the second semiconductor element 22 is located on the same side as the second back surface electrode 221 in the thickness direction z. Therefore, in the semiconductor device A40, the arrangement of the second gate electrode leading layer 162 is essential.

[0092] Next, the effects of the semiconductor device A40 will be described.

[0093] The semiconductor device A40 includes a conductive member 30 spaced apart from the substrate 11 on the side toward which the main surface 111 faces in the thickness direction z. The conductive member 30 is bonded to a first main surface electrode 212 of the first semiconductor element 21 and a second main surface electrode 222 of the second semiconductor element 22. The first main surface electrode 212 and the second main surface electrode 222 have opposite polarities. The substrate 11 includes an exposed portion 11A located between the first wiring layer 12 and the second wiring layer 13 as viewed in the thickness direction z. The conductive member 30 overlaps the exposed portion 11A as viewed in the thickness direction z. Therefore, the semiconductor device A40 also makes it possible to reduce noise caused by leakage current from the device.

[0094] A semiconductor device A50 according to a fifth embodiment of the present disclosure will be described with reference to Figures 21 to 23. In these figures, elements that are the same as or similar to those in the semiconductor device A10 described above are given the same reference numerals, and duplicated explanations will be omitted. Here, Figure 21 shows a perspective view through the sealing resin 60 for ease of understanding.

[0095] In the semiconductor device A50, the configuration of the second semiconductor element 22 and the configuration of the pair of gate wires 51 and the pair of detection wires 52 that are joined to the second semiconductor element 22 differ from the configuration of the semiconductor device A10 described above.

[0096] 21, the configuration of the first semiconductor element 21 is the same as the configuration of the first semiconductor element 21 of the semiconductor device A10. Therefore, in the semiconductor device A30, the first gate electrode 213 of the first semiconductor element 21 is located on the same side as the first main surface electrode 212 in the thickness direction z.

[0097] As shown in FIGS. 21 to 23, the second semiconductor element 22 further includes a second detection electrode 224, a second element body 225, a plurality of second rewiring layers 226, and a second protective layer 227.

[0098] 21 to 23, in the semiconductor device A50, the second gate electrode 223 and the second detection electrode 224 are located on the same side as the second main surface electrode 222 in the thickness direction z. As viewed in the thickness direction z, the second gate electrode 223 and the second detection electrode 224 are located outward from the second element body 225. As viewed in the thickness direction z, the area of ​​the second back surface electrode 221 is larger than the area of ​​the second electrode 225B.

[0099] 21, one of the pair of gate wires 51 is bonded to the first gate electrode 213 of the first semiconductor element 21 and the first gate wiring layer 141. As a result, the first gate electrode 213 is electrically connected to the first gate terminal 441. As shown in FIG. 21, the other of the pair of gate wires 51 is bonded to the second gate electrode 223 of the second semiconductor element 22 and the second gate wiring layer 142. As a result, the second gate electrode 223 is electrically connected to the second gate terminal 442.

[0100] 21, one of the pair of detection wires 52 is joined to the first principal surface electrode 212 of the first semiconductor element 21 and the first detection wiring layer 151. As a result, the first principal surface electrode 212 is electrically connected to the first detection terminal 451. As shown in FIG. 21, the other of the pair of detection wires 52 is joined to the second detection electrode 224 of the second semiconductor element 22 and the second detection wiring layer 152. As a result, the second back surface electrode 221 of the second semiconductor element 22 is electrically connected to the second detection terminal 452.

[0101] Next, the effects of the semiconductor device A50 will be described.

[0102] The semiconductor device A50 includes a conductive member 30 spaced apart from the substrate 11 on the side toward which the main surface 111 faces in the thickness direction z. The conductive member 30 is bonded to a first main surface electrode 212 of the first semiconductor element 21 and a second main surface electrode 222 of the second semiconductor element 22. The first main surface electrode 212 and the second main surface electrode 222 have opposite polarities. The substrate 11 includes an exposed portion 11A located between the first wiring layer 12 and the second wiring layer 13 as viewed in the thickness direction z. The conductive member 30 overlaps the exposed portion 11A as viewed in the thickness direction z. Therefore, the semiconductor device A50 also makes it possible to reduce noise caused by leakage current from the device.

[0103] In the semiconductor device A50, the second gate electrode 223 of the second semiconductor element 22 is located on the same side as the second main surface electrode 222 in the thickness direction z. This eliminates the need to provide the second gate electrode extraction layer 162. Furthermore, in the semiconductor device A50, the second semiconductor element 22 has a second detection electrode 224 located on the same side as the second main surface electrode 222 in the thickness direction z. The second detection electrode 224 is electrically connected to the second back surface electrode 221 of the second semiconductor element 22. This eliminates the need to provide the back surface electrode extraction layer 17.

[0104] The present disclosure is not limited to the above-described embodiment, and the specific configuration of each part of the present disclosure can be freely modified in various ways.

[0105] The present disclosure includes the embodiments described in the following appendices. Appendix 1. a substrate having a main surface facing in a thickness direction; a first wiring layer disposed on the main surface; a second wiring layer disposed on the main surface and spaced apart from the first wiring layer in a first direction perpendicular to the thickness direction; a first semiconductor element having a first main surface electrode and a first back surface electrode positioned on opposite sides in the thickness direction, the first back surface electrode being joined to the first wiring layer; a second semiconductor element having a second principal surface electrode and a second back surface electrode positioned on opposite sides in the thickness direction, the second back surface electrode being joined to the second wiring layer; a conductive member spaced apart from the substrate in the thickness direction and joined to the first principal surface electrode and the second principal surface electrode, the first principal surface electrode and the second principal surface electrode have polarities different from each other, the substrate includes an exposed portion located between the first wiring layer and the second wiring layer; When viewed in the thickness direction, the conductive member overlaps the exposed portion. Appendix 2. a first gate terminal spaced apart from the first wiring layer; a second gate terminal spaced apart from the second wiring layer; the first semiconductor element has a first gate electrode that is electrically connected to the first gate terminal; 2. The semiconductor device according to claim 1, wherein the second semiconductor element has a second gate electrode that is electrically connected to the second gate terminal. Appendix 3. a first detection terminal spaced apart from the first wiring layer and connected to the first principal surface electrode; 3. The semiconductor device according to claim 2, further comprising: a second detection terminal spaced apart from the second wiring layer and connected to the second back surface electrode. Appendix 4. a gate electrode lead layer spaced apart from the second wiring layer and connected to the second gate terminal; the first gate electrode is located on the same side as the first principal surface electrode in the thickness direction, 4. The semiconductor device according to claim 3, wherein the second gate electrode is located on the same side as the second back surface electrode in the thickness direction and is joined to the gate electrode lead layer. Appendix 5. the first gate electrode is located on the same side as the first principal surface electrode in the thickness direction, 4. The semiconductor device according to claim 3, wherein the second gate electrode is located on the same side as the second principal surface electrode in the thickness direction. Appendix 6. the second semiconductor element has a detection electrode located on the same side as the second principal surface electrode in the thickness direction, 6. The semiconductor device according to claim 5, wherein the detection electrode is electrically connected to the second back surface electrode and the second detection terminal. Appendix 7. a first gate electrode lead layer spaced apart from the first wiring layer and connected to the first gate terminal; a second gate electrode lead layer spaced apart from the second wiring layer and connected to the second gate terminal; the first gate electrode is located on the same side as the first back surface electrode in the thickness direction and is joined to the first gate electrode extraction layer; 4. The semiconductor device according to claim 3, wherein the second gate electrode is located on the same side as the second back surface electrode in the thickness direction and is joined to the second gate electrode lead layer. Appendix 8. further comprising a pair of diodes individually connected to the first wiring layer and the second wiring layer; 8. The semiconductor device according to claim 3, wherein the pair of diodes are joined to the conductive member. Appendix 9. 9. The semiconductor device according to claim 3, further comprising a capacitor connected to the first wiring layer and the second wiring layer. Appendix 10. 10. The semiconductor device according to claim 9, wherein the capacitor overlaps the exposed portion when viewed in the thickness direction. Appendix 11. a first input terminal electrically connected to the first wiring layer; a second input terminal electrically connected to the second wiring layer; an output terminal spaced apart from the substrate on a side toward which the main surface faces in the thickness direction and electrically connected to the conductive member; the first input terminal and the second input terminal are located on one side of the substrate in a second direction orthogonal to both the thickness direction and the first direction; 11. The semiconductor device according to claim 3, wherein the output terminal is located on the other side of the substrate in the second direction. Appendix 12. 12. The semiconductor device according to claim 11, wherein the output terminal is joined to the conductive member. Appendix 13. the first gate terminal is located on the opposite side of the first wiring layer from the second wiring layer in the first direction; 13. The semiconductor device according to claim 3, wherein the second gate terminal is located on the opposite side of the second wiring layer from the first wiring layer in the first direction. Appendix 14. the first detection terminal is located closer to the first gate terminal than the second gate terminal; 14. The semiconductor device according to claim 13, wherein the second detection terminal is located closer to the second gate terminal than the first gate terminal. Appendix 15. a sealing resin that covers the first wiring layer, the second wiring layer, the first semiconductor element, the second semiconductor element, and the conductive member; 15. The semiconductor device according to any one of claims 1 to 14, wherein the sealing resin includes a portion sandwiched between the exposed portion and the conductive member in the thickness direction. Appendix 16. the substrate has a back surface facing the opposite side to the main surface in the thickness direction, 16. The semiconductor device according to claim 15, wherein the back surface is exposed from the sealing resin. Appendix 17. 17. The semiconductor device of claim 16, further comprising a heat sink bonded to the back surface. [Explanation of symbols]

[0106] A10, A20, A30, A40, A50: Semiconductor device 11: Substrate 11A: Exposed part 111: Main surface 112: Back surface 12: First wiring layer 13: Second wiring layer 141: First gate wiring layer 142: Second gate wiring layer 151: First detection wiring layer 152: Second detection wiring layer 161: First gate electrode lead layer 162: Second gate electrode lead layer 17: Back electrode lead layer 21: First semiconductor element 211: First back surface electrode 212: First principal surface electrode 213: First gate electrode 214: First detection electrode 215: First element body 215A: 1st electrode 215B: 2nd electrode 215C: Gate electrode 216: First rewiring layer 217: First protective layer 22: Second semiconductor element 221: Second rear surface electrode 222: Second main surface electrode 223: Second gate electrode 224: Second detection electrode 225: Second element body 226: Second rewiring layer 227: Second protective layer 23: Diode 23A: First diode 23B: Second diode 231: Anode electrode 232: Cathode electrode 24: Capacitor 241: Electrode 25: First bonding layer 26: Second bonding layer 27: Third bonding layer 30: Conductive member 31: Base 32: First joint 33: Second junction 41: First input terminal 411: First mounting hole 42: Second input terminal 421: Second mounting hole 43: Output terminal 431: Third mounting hole 441: First gate terminal 442: Second gate terminal 451: First detection terminal 452: Second detection terminal 51: Gate wire 52: Detection wire 53: First wire 54: Second wire 60: Sealing resin 61:Top 62:Bottom 63: 1st side 64: 2nd side z: thickness direction x: 1st direction y: 2nd direction

Claims

1. a substrate having a main surface facing in a thickness direction; a first wiring layer disposed on the main surface; a second wiring layer disposed on the main surface and spaced apart from the first wiring layer in a first direction perpendicular to the thickness direction; a first semiconductor element having a first main surface electrode and a first back surface electrode positioned on opposite sides in the thickness direction, the first back surface electrode being joined to the first wiring layer; a second semiconductor element having a second main surface electrode and a second back surface electrode positioned on opposite sides in the thickness direction, the second back surface electrode being joined to the second wiring layer; a conductive member spaced apart from the substrate in the thickness direction and joined to the first principal surface electrode and the second principal surface electrode; a first gate terminal spaced apart from the first wiring layer; a second gate terminal spaced apart from the second wiring layer; a first detection terminal spaced apart from the first wiring layer and connected to the first principal surface electrode; a second detection terminal spaced apart from the second wiring layer and connected to the second back surface electrode; a capacitor connected to the first wiring layer and the second wiring layer, Equipped with the first principal surface electrode and the second principal surface electrode have polarities different from each other; the first semiconductor element has a first gate electrode that is electrically connected to the first gate terminal; the second semiconductor element has a second gate electrode that is electrically connected to the second gate terminal; the substrate includes an exposed portion located between the first wiring layer and the second wiring layer; When viewed in the thickness direction, the conductive member overlaps the exposed portion.

2. a gate electrode lead layer spaced apart from the second wiring layer and connected to the second gate terminal; the first gate electrode is located on the same side as the first principal surface electrode in the thickness direction, 2. The semiconductor device according to claim 1, wherein said second gate electrode is located on the same side as said second back surface electrode in said thickness direction and is joined to said gate electrode lead layer.

3. a pair of diodes individually connected to the first wiring layer and the second wiring layer; 3. The semiconductor device according to claim 1, wherein the pair of diodes are joined to the conductive member.

4. 4. The semiconductor device according to claim 1, wherein the capacitor overlaps the exposed portion when viewed in the thickness direction.

5. a first input terminal electrically connected to the first wiring layer; a second input terminal electrically connected to the second wiring layer; an output terminal spaced apart from the substrate on a side toward which the main surface faces in the thickness direction and electrically connected to the conductive member; the first input terminal and the second input terminal are located on one side of the substrate in a second direction orthogonal to both the thickness direction and the first direction; 5. The semiconductor device according to claim 1, wherein the output terminal is located on the other side of the substrate in the second direction.

6. The semiconductor device according to claim 5 , wherein the output terminal is joined to the conductive member.

7. the first gate terminal is located on the opposite side of the first wiring layer from the second wiring layer in the first direction, 7. The semiconductor device according to claim 1, wherein said second gate terminal is located on an opposite side of said second wiring layer to said first wiring layer in said first direction.

8. the first detection terminal is located closer to the first gate terminal than the second gate terminal; The semiconductor device according to claim 7 , wherein the second detection terminal is located closer to the second gate terminal than to the first gate terminal.

9. a sealing resin that covers the first wiring layer, the second wiring layer, the first semiconductor element, the second semiconductor element, and the conductive member; 9. The semiconductor device according to claim 1, wherein said sealing resin includes a portion sandwiched between said exposed portion and said conductive member in said thickness direction.

10. the substrate has a back surface facing the opposite side to the main surface in the thickness direction, The semiconductor device according to claim 9 , wherein the back surface is exposed from the sealing resin.

11. The semiconductor device according to claim 10 , further comprising a heat sink bonded to the back surface.

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