Integrated showerhead with temperature control for delivering radicals and precursor gases to a downstream chamber to enable remote plasma film deposition

Abstract

To provide an integrated showerhead with temperature control to supply radicals and precursor gases to a downstream chamber to enable remote plasma film deposition.SOLUTION: The substrate processing system comprises an upper chamber comprising a substrate support, wherein a showerhead is disposed above the upper chamber to filter ions and provide radicals from a plasma source to the upper chamber. The showerhead comprises a thermally conductive fluid plenum 140 comprising an inlet for receiving a thermally conductive fluid and a plurality of flow channels for directing the thermally conductive fluid through a central portion of the showerhead to an outlet for controlling the temperature of the showerhead, a secondary gas plenum 150 comprising an inlet for receiving a secondary gas and a plurality of secondary gas injectors 112 for injecting the secondary gas into the upper chamber, and a plurality of through-holes 110 extending through the showerhead. The through-holes are not in fluid communication with the heat transfer fluid plenum and the secondary gas plenum.SELECTED DRAWING: FIG. 8A

Description

[Technical Field]

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS This application claims priority to U.S. Patent Application No. 15 / 378,854, filed December 14, 2016, the entire disclosure of which is incorporated herein by reference.

[0002] The present disclosure relates to substrate processing systems, and more particularly to substrate processing systems with showerheads that deliver radical and precursor gases to a downstream chamber. [Background technology]

[0003] The background art provided herein is intended to provide a general background to the present disclosure, and the work of the inventors named herein, to the extent described in this background art, along with aspects of the description that would not normally be considered prior art at the time of filing, are not admitted expressly or implicitly as prior art to the present disclosure.

[0004] Substrate processing systems can be used to deposit films on substrates, such as semiconductor wafers. Substrate processing systems typically include a processing chamber and a substrate support. During film deposition, radicals and precursor gases can be supplied to the processing chamber.

[0005] For example, the processing chamber may include an upper chamber, a lower chamber, and a substrate support. A showerhead may be disposed between the upper and lower chambers. A substrate is disposed on the substrate support in the lower chamber. A plasma gas mixture is supplied to the upper chamber, and a plasma is ignited in the upper chamber. A portion of the radicals generated by the plasma flow through the showerhead into the lower chamber. The showerhead filters ions and blocks UV light from reaching the lower chamber. A precursor gas mixture is supplied to the lower chamber through the showerhead and reacts with the radicals to deposit a film on the substrate.

[0006] Typically, showerheads do not include a temperature control system. However, some processing systems use a basic temperature control system to control the temperature of the outer edge of the showerhead (which is accessible and not under vacuum). The basic temperature control system does not uniformly control the temperature throughout the showerhead due to heat from the plasma. In other words, the temperature at the center of the showerhead increases. Temperature changes occur with process changes, such as plasma on / off, pressure, flow rate, and / or pedestal temperature. Showerhead temperature variations adversely affect deposition process uniformity and defect performance. Summary of the Invention

[0007] The substrate processing system includes a first chamber including a substrate support. A showerhead is disposed above the first chamber and configured to filter ions and deliver radicals from a plasma source to the first chamber. The showerhead includes a heat transfer fluid plenum having an inlet for receiving a heat transfer fluid and a plurality of flow passages for directing the heat transfer fluid through a central portion of the showerhead to an outlet to control a temperature of the showerhead. A secondary gas plenum has an inlet for receiving a secondary gas and a plurality of secondary gas injectors for injecting the secondary gas into the first chamber. A plurality of through-holes extend through the showerhead. The through-holes are not in fluid communication with either the heat transfer fluid plenum or the secondary gas plenum.

[0008] In another feature, the heat transfer fluid plenum includes a first plenum in fluid communication with the inlet, a first end of a flow path in fluid communication with the first plenum, and a second plenum in fluid communication with an opposite end of the flow path.

[0009] In another feature, the heat transfer fluid plenum comprises a first plenum in fluid communication with the inlet, a second plenum in fluid communication with a first end of the flow path, a first plurality of restrictions disposed between the first plenum and the second plenum to restrict fluid flow therebetween, a third plenum in fluid communication with an opposite end of the flow path, a fourth plenum in fluid communication with the outlet, and a second plurality of restrictions disposed between the third plenum and the fourth plenum to restrict fluid flow therebetween.

[0010] In another aspect, the plurality of flow channels flow radially from one side of the showerhead to the other side of the showerhead. The plurality of flow channels define a linear path. The plurality of flow channels define a curved path. The plurality of flow channels define a sinusoidally shaped path.

[0011] In another feature, the secondary gas plenum comprises a first plenum, a second plenum, and a flow restriction disposed between the first plenum and the second plenum.

[0012] In another feature, the flow restriction includes a first plurality of walls and a plurality of slots defined between the first plurality of walls. The first plurality of walls are arcuate. The second plurality of walls are disposed around the through-hole of the second plenum. The second plurality of walls are cylindrical.

[0013] In another feature, the secondary gas injector is in fluid communication with the second plenum, and a plurality of restrictions are disposed between the second plenum and the secondary gas injector.

[0014] In another feature, the plurality of flow channels comprises an inlet and an outlet, the inlets of the plurality of flow channels are disposed on one side of the showerhead, the outlets of the plurality of flow channels are disposed between the inlets on that side, and the plurality of flow channels connect to the inlets, traverse the showerhead, and turn back across the showerhead to return to the outlets.

[0015] In another feature, the second chamber is disposed above the first chamber. The showerhead is disposed between the first and second chambers. A coil is disposed around the second chamber. An RF generator is connected to the coil to generate a plasma in the second chamber.

[0016] In another feature, at least one of the flow paths includes a flow restriction. The heat transfer fluid includes a liquid. The heat transfer fluid includes a gas. The heat transfer fluid does not flow into the first chamber.

[0017] In another feature, the secondary gas injector extends a predetermined distance from the bottom surface of the showerhead, the predetermined distance being within a range of 0.1 inches (2.54 mm) to 1.5 inches (38.1 mm). The through-hole has a diameter within a range of 0.05 inches (1.27 mm) to 0.3 inches (7.62 mm).

[0018] In another feature, the showerhead includes a cylindrical wall extending from a bottom surface of the showerhead and positioned radially outward from the plurality of through-holes and the plurality of secondary gas injectors.The showerhead includes a cylindrical wall extending upward from a top surface of the showerhead and positioned radially outward from the plurality of through-holes and the plurality of secondary gas injectors.

[0019] In another feature, a first O-ring is positioned between the top surface of the showerhead and the upper chamber, and a second O-ring is positioned between the bottom surface of the showerhead and the lower chamber.

[0020] Further areas of applicability of the present disclosure will become apparent from the detailed description, claims, and drawings. The detailed description and specific examples are intended for purposes of illustration only and are not intended to limit the scope of the present disclosure. [Brief explanation of the drawings]

[0021] The present disclosure will become more fully understood from the detailed description and accompanying drawings set forth below.

[0022] [Figure 1] FIG. 1 is a functional block diagram illustrating an example substrate processing chamber equipped with a showerhead in accordance with the present disclosure.

[0023] [Figure 2A] FIG. 2 is a bottom perspective view of an example showerhead according to the present disclosure.

[0024] [Figure 2B] 1 is a side cross-sectional view showing a groove for receiving an O-ring according to the present disclosure;

[0025] [Figure 3] FIG. 1 is a top perspective view of an example showerhead according to the present disclosure.

[0026] [Figure 4A] FIG. 2 is a plan view showing the bottom of an example showerhead according to the present disclosure.

[0027] [Figure 4B] 1 is a top view of an example of a plurality of through-holes arranged around a secondary gas injector according to the present disclosure;

[0028] [Figure 4C] 10 is a top view illustrating another example of a plurality of through-holes arranged around a secondary gas injector according to the present disclosure.

[0029] [Figure 5A] FIG. 1 is a cross-sectional side view of an example showerhead according to the present disclosure.

[0030] [Figure 5B] FIG. 1 is a cross-sectional side view of an example showerhead formed by multiple adjacent layers.

[0031] [Figure 6] FIG. 10 is an enlarged cross-sectional side view of another example showerhead according to the present disclosure.

[0032] [Figure 7] 7 is a cross-sectional side view of the showerhead of FIG. 6 in accordance with the present disclosure.

[0033] [Figure 8A] FIG. 10 is an enlarged cross-sectional side view of another example showerhead with downwardly protruding walls in accordance with the present disclosure.

[0034] [Figure 8B] FIG. 10 is an enlarged cross-sectional side view of another example showerhead with upwardly protruding walls in accordance with the present disclosure.

[0035] [Figure 9] FIG. 2 is a plan view illustrating an example of the top surface of an intermediate layer of a showerhead according to the present disclosure.

[0036] [Figure 10] 1 illustrates an example of a fluid channel including a restriction for controlling fluid flow through the channel in accordance with the present disclosure.

[0037] [Figure 11] FIG. 2 is a top view illustrating an example bottom surface of an intermediate layer of a showerhead according to the present disclosure.

[0038] [Figure 12] FIG. 10 is a plan view illustrating another example of the top surface of an intermediate layer of a showerhead with alternating pairs of heat transfer fluid inlets and outlets located along one edge in accordance with the present disclosure.

[0039] [Figure 13] FIG. 13 is a plan view showing the bottom surface of the intermediate layer of the showerhead of FIG. 12 in accordance with the present disclosure.

[0040] [Figure 14] FIG. 14 is a cross-sectional side view of the showerhead of FIGS. 12 and 13.

[0041] In the drawings, the same numbers may be used to identify similar and / or identical elements. DETAILED DESCRIPTION OF THE INVENTION

[0042] The present disclosure relates to a substrate processing system with an integrated recessed showerhead that provides uniform radical delivery and filters ions from a remote plasma source. The showerhead provides uniform temperature control by supplying a heat transfer fluid to a flow path through a central portion of the showerhead to maintain a uniform and controlled temperature. The showerhead also provides uniform precursor gas flow delivery to a chamber containing a substrate. In some examples, the substrate processing system can be utilized to deposit conformal carbide films, although other types of films may also be deposited.

[0043] 1, a substrate processing system 10 includes an upper chamber 20 and a lower chamber 30. While a particular type of substrate processing system is shown and described, other types may be used. While an inductively coupled plasma is shown, other types of plasma generation may be used, such as a capacitively coupled plasma, a remote plasma source, or other suitable plasma generator.

[0044] In some examples, the upper chamber 20 may comprise a dome-shaped chamber, although other chamber shapes may be used. A substrate support 34 is disposed within the lower chamber 30. A substrate 36 is disposed on the substrate support 34 during substrate processing. A showerhead 40 is disposed between the upper chamber 20 and the lower chamber 30. An induction coil 42 may be disposed around the upper chamber 20.

[0045] A gas supply system 50-1 may be used to supply a process gas mixture including a plasma gas to the upper chamber 20. The gas supply system 50-1 includes one or more gas sources 52-1, 52-2, ..., and 52-N, valves 54-1, ..., and 54-N, mass flow controllers (MFCs) 56-1, ..., and 56-N, and a manifold 58, although other types of gas supply systems may be used (where N is an integer). A gas supply system 50-2 supplies a process gas mixture including a precursor gas to the showerhead 40.

[0046] RF plasma generator 66 includes an RF source 70 and a matching network 72. RF plasma generator 66 selectively supplies RF power to inductive coil 42 (while plasma gas is supplied) to generate plasma 62 within upper chamber 20.

[0047] To control the temperature of the showerhead 40, a temperature control system 86 may be used to supply a heat transfer fluid, such as a gas or liquid coolant, to the showerhead 40. A valve 88 and a pump 90 may be used to evacuate the reactants.

[0048] The controller 94 communicates with the gas delivery systems 50-1 and 50-2 to selectively supply process gases as needed to the upper chamber 20 and the showerhead 40. The controller 94 communicates with the RF plasma generator 66 to generate and extinguish a plasma within the upper chamber 20.

[0049] The controller 94 communicates with the temperature control system 86 to control the flow rate and temperature of a heat transfer fluid used to control the temperature of the showerhead 40. In some examples, the heat transfer fluid may include water, water mixed with ethylene glycol, a fluorinated perfluoropolyether fluid, or other fluids, and / or one or more gases. In some examples, the temperature control system 86 controls the flow rate and temperature of the heat transfer fluid using closed-loop control. In other examples, the temperature control system 86 controls the flow rate and temperature using proportional-integral-derivative (PID) control. The heat transfer fluid may be provided in an open-loop system from the building's water circulation system. In some examples, the heat transfer fluid is sealed from the vacuum chamber.

[0050] In some examples, the controller 94 is connected to one or more temperature sensors (not shown) disposed in the showerhead 40 to sense one or more temperatures of the showerhead 40. In some examples, the controller 94 is connected to one or more pressure sensors (not shown) disposed in the showerhead 40 to sense one or more pressures within the processing chamber. The controller 94 is in communication with the valves 88 and pumps 90 to control the pressures within the upper and lower chambers 20, 30 and to selectively evacuate reactants therefrom.

[0051] 2A-3, the top surface 102, bottom surface 104, and side surface 108 of the showerhead 40 are shown. In FIG. 2A, the showerhead 40 includes a plurality of spaced-apart through-holes 110 in a central portion or center of the showerhead's axis that pass from the top surface 102 to the bottom surface 104 of the showerhead 40. In some examples, an O-ring 111 may be disposed between the bottom surface 104 of the showerhead 40 and the lower chamber 30, as shown in FIG. 2B. A groove 113 may be disposed in one or both of the showerhead 40 and the lower chamber 30 to position the O-ring 111.

[0052] A plurality of secondary gas injectors 112 deliver secondary gases (such as precursor gases) from the showerhead 40. In some examples, the secondary gas injectors 112 extend downward from the bottom surface 104 of the showerhead 40 in a central portion of the showerhead 40. In some examples, the secondary gas injectors 112 include a restriction (not shown) on the bottom surface 104 to prevent back-diffusion and to ensure uniform gas flow per secondary gas injector. The restriction can cause a choked flow condition.

[0053] In FIG. 3 , the showerhead 40 includes paired thermal fluid ports 120, 122 that function as an inlet and an outlet. The showerhead 40 may include two or more thermal fluid plenums with more paired ports. A leak collection tray 128 may be disposed around one or both of the thermal fluid ports 120, 122. The leak collection tray 128 may be disposed outside the upper and lower chambers. The leak collection tray 128 enables leak detection. In some examples, an O-ring 115 may be disposed between the top surface 102 of the showerhead 40 and the upper chamber 20. Similar to FIG. 2B , a groove may be disposed in one or both of the showerhead 40 and the upper chamber 20 to position the O-ring 111.

[0054] Referring now to FIG. 4A , the through-holes 110 and secondary gas injectors 112 of the showerhead 40 may be arranged in various patterns. For example, the through-holes 110 and secondary gas injectors 112 of the showerhead 40 shown in FIG. 4A may have an offset triangular pattern T. Alternative patterns include rectangular, radial, hexagonal, or spiral patterns, although other patterns may also be used. In some examples, the spacing between the secondary gas injectors 112 ranges from 0.25 inches to 2 inches (50.8 mm). In some examples, the through-holes 110 may have the same spacing as the secondary gas injectors, although different spacings may also be used, as shown in FIGS. 4B and 4C .

[0055] In some examples, the through-holes 110 may include multiple smaller through-holes clustered around each secondary gas injector 112, as shown in the examples of Figures 4B and 4C. The arrangement of the through-holes 110 around the secondary gas injector 112 may be uniform, as shown in Figure 4B, or non-uniform, as shown in Figure 4C. In some examples, the through-holes 110-R are positioned radially of the showerhead 40 on the side of the secondary gas injector closer to the center of the showerhead 40.

[0056] 5A-8B, cross-sectional side views of the showerhead 40 are shown. In FIG. 5A, through-holes 110 penetrate from the top surface 102 of the showerhead 40 to its bottom surface 104. One or more heat transfer fluid plenums 140 are disposed in one or more planes perpendicular to the through-holes 110 and parallel to but offset from the top surface 102 of the showerhead 40. One or more secondary gas plenums 150 are disposed in one or more planes perpendicular to the through-holes 110 and parallel to but offset from the bottom surface 104 of the showerhead 40 and the one or more planes containing the heat transfer fluid plenums 140. In the illustrated configuration, the heat transfer fluid plenum is above the secondary gas supply. The plenums may be inverted so that the secondary gas plenum is above the heat transfer fluid plenum.

[0057] One or more heat transfer fluid plenums 140 are connected to the thermal fluid ports 120, 122. One or more secondary gas plenums 150 receive gas from the secondary gas inlets (FIG. 2A) and provide secondary gas flow to the flow passages 152 of the secondary gas injectors 112.

[0058] In some examples, the secondary gas injectors 112 extend a predetermined distance away from the bottom surface of the showerhead 40 to reduce film deposition on the showerhead 40. In some examples, the predetermined distance ranges from 0.1 inches to 1.5 inches, although other distances may be used. In some examples, the secondary gas injectors 112 include restrictions to prevent back-diffusion and ensure flow uniformity from one secondary gas injector to another. In some examples, the through-holes 110 have diameters ranging from 0.05 inches to 0.3 inches.

[0059] In FIG. 5B , the showerhead 40 can be formed of multiple layers, including a top layer 163, a middle layer 165, and a bottom layer 167 connected to one another. More layers can be added to form additional plenums. In some examples, the showerhead 40 can be manufactured using vacuum brazing, tungsten inert gas (TIG) welding, or electron beam welding to enable complex and unique shapes at a reasonable cost. Vacuum brazing allows the showerhead to be machined as flat plates with grooves cut into the plates and brazing layers between each plate. Welding techniques require more complex subcomponents to allow welding access to all areas requiring sealing. Posts and corresponding holes can be machined to raise the sealing area to the surface where welding is accessible.

[0060] In some examples, the top surface of the middle layer 165 defines one or more heat transfer fluid plenums 140, and the bottom surface of the middle layer 165 defines one or more secondary gas plenums 150. However, the bottom surface of the top layer 163 may be used to partially or completely define one or more heat transfer fluid plenums 140, and the top surface of the bottom layer 167 may be used to completely or partially define one or more secondary gas plenums.

[0061] In some examples, the thickness of the plenums and the material above and below them is between 0.05 inches and 0.25 inches (6.35 mm), although other thicknesses may be used. The thickness of the material between and above / below the plenums is determined by the fluid pressures required for fabrication and the strength required to support the material thickness. The thickness of the thermal fluid plenum 140 may be sized to reduce fluid pressure drop. The size of the secondary gas plenum 150 may be selected to be large enough to allow uniform gas distribution to each injector 112. The thickness of each layer is preferably minimized to reduce the overall thickness and thereby reduce radical loss within the through-holes 110.

[0062] In some examples, the thickness of the top layer 163 and the bottom layer 167 ranges from 0.075 inches (1.905 mm) to 0.125 inches (3.175 mm), although other thicknesses may be used. In some examples, the thickness of the top layer 163 and the bottom layer 167 is 0.1 inches, although other thicknesses may be used. In some examples, the thickness of the middle layer 165 ranges from 0.4 inches (10.16 mm) to 0.6 inches (15.24 mm), although other thicknesses may be used. In some examples, the thickness of the middle layer 165 is 0.5 inches (12.7 mm), although other thicknesses may be used. In some examples, the thickness of the showerhead is 1 inch (25.4 mm) or less. In some examples, the thickness of the showerhead is 0.7 inches (17.78 mm) or less.

[0063] 6 and 7 show a leak collection tray 128. The leak collection tray 128 includes a recess disposed around at least one of the thermal fluid ports 120, 122. In some examples, the recess is cylindrical, although other shapes may be used.

[0064] 8A , some examples include a cylindrical wall 210 that extends downward from (near or spaced radially inward from) the radially outer edge 208 of the showerhead 40 toward the substrate 36 (and radially outward from the through-holes 110 and secondary gas injector 112). The cylindrical wall 210 may be integral with or attached to the showerhead 40. The cylindrical wall 210 improves thermal uniformity between the showerhead 40 and the chamber wall as seen by the substrate. The cylindrical wall 210 may be used to suppress exhaust port pumping non-uniformity by providing a flow restriction between the wall and the substrate support 34. In some examples, the cylindrical wall 210 extends below a plane that includes the top surface of the substrate support 34.

[0065] 8B , some examples include a cylindrical wall 211 that extends downward from (near or spaced radially inward from) the radially outer edge 208 of the showerhead 40 (and radially outward of the through-holes 110 and secondary gas injector 112). The cylindrical wall 211 may be integral with or attached to the upper surface of the showerhead 40. The cylindrical wall 211 provides a mounting surface for mounting a radical source.

[0066] 9-10, example configurations of one or more heat transfer fluid plenums 140 are shown. FIG. 9 illustrates the top surface of the intermediate layer 165. The one or more heat transfer fluid plenums 140 include a first plenum 156-1. In some examples, the first plenum 156-1 is arcuate, although other shapes may be used. In some examples, multiple restrictions 158-1 are positioned adjacent to one another on one side of the first plenum 156-1. The spacing between each of the multiple restrictions 158-1 is selected to restrict and distribute the flow from the first plenum 156-1 to the second plenum 156-2. In some examples, each of the multiple restrictions 158-1 includes a post having a circular, elliptical, or oval shape, although other shapes may be used. The multiple restrictions 158-1 may be used to make the fluid flow between the flow paths 160 more uniform and to eliminate the blowout effect. Alternatively, one or more of the flow paths 160 may include a restriction 164 to control flow, as shown in Figure 10. If the flow paths 160 include a restriction 164, the multiple restrictions 158-1 may be omitted, and the first and second plenums 156-1 and 156-2 may be a single plenum.

[0067] The second plenum 156-2 opens toward a first end of the flow channels 160. In some examples, the flow channels 160 have a triangular, square wave, curved, or generally sinusoidal shape to increase surface area. The second end of the flow channels 160 connects to a third plenum 156-3 located on the opposite side of the showerhead 40. A plurality of restrictions 158-2 are located on one side of the third plenum 156-3. Each of the plurality of restrictions 158-2 is positioned to restrict flow to a fourth plenum 156-4. The fourth plenum 156-4 is connected to an outlet. If the flow channels 160 include the restrictions 164, the plurality of restrictions 158-2 can be omitted, and the third and fourth plenums 156-3 and 156-4 can be combined into a single plenum.

[0068] In some examples, the thermal fluid flow passages 160 have a channel-to-channel non-uniformity of 10% or less in flow rate. In some examples, the thermal fluid flow rate is 10 gallons per minute and is controlled to within ±1°C across the showerhead surface. In some examples, the secondary gas injectors 112 have a flow rate non-uniformity of 1% or less in mass flow rate. In some examples, the secondary gas injectors 112 have a non-uniformity of 0.1% or less in mass flow rate.

[0069] 11, the bottom surface of the middle layer 165 is shown. The one or more secondary gas plenums 150 include a gas inlet 172 and a flow passage 174 in fluid communication with a first plenum 176-1 and a second plenum 176-2. A first plurality of walls 180 are disposed between the first plenum 176-1 and the second plenum 176-2. A plurality of slots 184 are disposed between the ends of the plurality of walls 180 to restrict flow between the first plenum 176-1 and the second plenum 176-2. In some examples, the first plenum 176-1 is ring-shaped, the second plenum 176-2 is circular, and the first plurality of walls 180 are arcuate, although other shapes may be used.

[0070] A second plurality of walls 190 are disposed around the through-hole 110. In some examples, the second plurality of walls 190 are cylindrical, although other shapes may be used. In some examples, the upper edges of the second plurality of walls 190 provide a bonding area to form a vacuum seal between the secondary plenum 176-2 and the through-hole 110. In some examples, a plurality of restrictions 186 are provided at the inlet of the second gas injector 112 to control the flow of secondary gas from the second plenum 176-2 to the lower chamber 30.

[0071] In some examples, the slot 184 may be configured to reduce the pressure drop across the slot 184, ΔP スロット is the pressure drop ΔP 第1プレナム In some examples, the restriction 186 is sized to be significantly larger than ΔP スロット is ΔP 第1プレナム In some cases, ΔP スロット is ΔP第1プレナム It is five times larger than the

[0072] 12-14, an intermediate portion 300 of another showerhead 40 is shown with a heat transfer fluid inlet and outlet disposed along one side thereof. In other words, the flow path runs from the inlet across the showerhead, then turns back across the showerhead to the outlet.

[0073] 12 shows the top view of the intermediate section 300. A fluid inlet 310 is connected to a fluid inlet plenum 320. In some examples, the fluid inlet plenum 320 is arcuate. An inlet 324 to a plurality of flow channels 330 is connected to the fluid inlet plenum 320. The plurality of flow channels 330 traverse the entire showerhead 40, then turn back to outlets 334 located between adjacent ones of the flow channels 324. Although the flow channels 330 are shown as straight sections, non-straight flow channels (such as those shown above) may be used to increase surface area and heat transfer (or a combination of straight and curved lines may be used).

[0074] The outlet 334 passes through a gas conduit 338 in the midsection 300 to an outlet plenum 350 located on the bottom side of the midsection 300 in Figure 13. The outlet plenum 350 is connected to a fluid outlet 358. As can be appreciated, the bottom of the midsection 300 may also include a secondary gas plenum similar to that shown in Figure 11. The size of the conduit 338 may be varied to compensate for non-uniform flow rates from flow path to flow path to achieve the same uniformity as with the posts 158.

[0075] The integrated showerhead described herein provides sufficient and uniform radical delivery, filters ions from a remote plasma source, provides uniform temperature control, and delivers uniform precursors. In some examples, the temperature control provided by the showerhead with the heat transfer fluid channels described above reduces temperature non-uniformity across the substrate to less than 5°C. The heat transfer fluid channels can also reduce heat generated from the plasma contained in the upper chamber 20. The showerhead further includes an internal secondary gas plenum that provides uniform precursor delivery to the lower chamber. In some examples, the gas outlet from the secondary gas plenum is offset a predetermined distance from the bottom of the showerhead to minimize deposition on the showerhead and extend the time between cleanings.

[0076] The foregoing description is merely exemplary in nature and is not intended to limit the disclosure, its applications, or uses. The broad teachings of the present disclosure may be embodied in a variety of forms. Accordingly, while the present disclosure includes specific examples, the true scope of the disclosure is not limited to those examples, as other variations will become apparent from a study of the drawings, the specification, and the following claims. It should be understood that one or more steps within a method may be performed in a different order (or simultaneously) without altering the principles of the present disclosure. Furthermore, although each embodiment is described as having particular features, any one or more of the features described with respect to any embodiment of the present disclosure can be implemented in any of the other embodiments and / or combined with any of the features of the other embodiments, even if the combination is not expressly described. In other words, the above-described embodiments are not mutually exclusive, and substituting one or more embodiments for one another is within the scope of the present disclosure.

[0077] Spatial and functional relationships between elements (e.g., between modules, circuit elements, semiconductor layers) are described using various terms, such as "connected," "engaged," "coupled," "adjacent," "adjacent," "on top of," "above," "below," and "disposed." When describing a relationship between first and second elements in this disclosure, unless expressly stated as "direct," the relationship may be a direct relationship where no other intervening elements exist between the first and second elements, or an indirect relationship where one or more intervening elements exist (spatially or functionally) between the first and second elements. As used herein, the phrase "at least one of A, B, and C" should be interpreted to mean the logical (A or B or C) using a non-exclusive logical OR, and not to mean "at least one of A, at least one of B, and at least one of C."

[0078] In some embodiments, the controller is part of a system, which may be part of the examples described above. Such systems may include semiconductor processing equipment, such as one or more processing tools, one or more chambers, one or more platforms for processing, and / or specific processing components (e.g., substrate pedestals, gas flow systems, etc.). These systems may be integrated with electronics for controlling the operation of the system before, during, and after processing of the semiconductor substrate or substrates. The electronics may be referred to as a "controller" and may control various components or subcomponents of the system. Depending on the processing requirements and / or type of system, the controller may be programmed to control any of the processes disclosed herein, such as supply of process gases, temperature settings (e.g., heating and / or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid supply settings, position and motion settings, and substrate movement in and out of tools and other transfer tools and / or load locks connected or coupled to the specific system.

[0079] Generally, a controller may be defined as an electronic device having various integrated circuits, logic, memory, and / or software that receive instructions, issue instructions, control operations, enable cleaning operations, enable endpoint measurements, etc. Integrated circuits may include chips in the form of firmware that store program instructions, digital signal processors (DSPs), chips defined as application-specific integrated circuits (ASICs), and / or one or more microprocessors or microcontrollers that execute program instructions (e.g., software). Program instructions are communicated to the controller in the form of various individual settings (or program files) to define operational parameters for performing specific processes on or for semiconductor substrates or for the system. The operational parameters, in some embodiments, may be part of a recipe defined by a process engineer to accomplish one or more process steps during processing of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or dies of a substrate.

[0080] In some embodiments, the controller may be part of or connected to a computer that is integrated with, connected to, or otherwise networked with the system, or a combination thereof. For example, the controller may be in the “cloud” or may be all or part of a fab host computer system that can enable remote access to substrate processing. The computer may enable remote access to the system to monitor the current progress of a manufacturing operation, examine the history of past manufacturing operations, or examine trends or performance indicators from multiple manufacturing operations, to change parameters of a current process, configure processing steps according to a current process, or initiate a new process. In some examples, a remote computer (e.g., a server) may provide process recipes to the system over a network (which may include a local network or the Internet). The remote computer may include a user interface that enables entry or programming of parameters and / or settings, which are communicated to the system from the remote computer. In some examples, the controller receives instructions in the form of data, where the instructions specify parameters for each of the processing steps to be performed during one or more operations. It should be understood that the parameters may be specific to the type of process being performed as well as the type of tool the controller is configured to interface with or control. Thus, as described above, the controller may be distributed, such as by having one or more separate controllers that are networked and operate toward a common purpose (such as the process and control described herein). One example of a distributed controller for such purposes is one or more integrated circuits on the chamber that communicate with one or more remotely located integrated circuits (e.g., at the platform level or located as part of a remote computer) that cooperate to control the process in the chamber.

[0081] Without limitation, example systems may include a plasma etch chamber or module, a deposition chamber or module, a spin rinse chamber or module, a metal plating chamber or module, a cleaning chamber or module, a bevel edge etch chamber or module, a physical vapor deposition (PVD) chamber or module, a chemical vapor deposition (CVD) chamber or module, an atomic layer deposition (ALD) chamber or module, an atomic layer etch (ALE) chamber or module, an ion implantation chamber or module, a track chamber or module, and any other semiconductor processing system that may be associated with or utilized in the processing and / or manufacturing of semiconductor substrates.

[0082] As described above, depending on the processing step or steps being performed by the tool, the controller may communicate with one or more of other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, nearby tools, tools located throughout the factory, a main computer, another controller, or tools used in material transport to carry containers of substrates to or from tool locations and / or load ports within a semiconductor fabrication factory.

Claims

1. 1. A substrate processing system, comprising: a first chamber including a substrate support; a showerhead disposed above the first chamber and configured to filter ions and deliver radicals from a plasma source to the first chamber; Equipped with The shower head is a heat transfer fluid plenum including an inlet for receiving a heat transfer fluid and a plurality of flow paths for directing the heat transfer fluid through a central portion of the showerhead to an outlet for controlling a temperature of the showerhead; a secondary gas plenum including an inlet for receiving a secondary gas and a plurality of secondary gas injectors for injecting the secondary gas into the first chamber; a plurality of through holes penetrating the showerhead; Equipped with The through-hole is not in fluid communication with either the heat transfer fluid plenum or the secondary gas plenum.

2. 10. The substrate processing system of claim 1, The heat transfer fluid plenum includes a first plenum in fluid communication with the inlet; a first end of the flow passage in fluid communication with the first plenum; a second plenum in fluid communication with an opposite end of the flow path.

3. 10. The substrate processing system of claim 1, wherein the heat transfer fluid plenum comprises: a first plenum in fluid communication with the inlet; a second plenum in fluid communication with the first end of the flow path; a first plurality of restrictions disposed between the first plenum and the second plenum to restrict fluid flow therebetween; a third plenum in fluid communication with an opposite end of the flow path; a fourth plenum in fluid communication with the outlet; a second plurality of restrictions disposed between the third plenum and the fourth plenum to restrict fluid flow therebetween; A substrate processing system comprising:

4. 10. The substrate processing system of claim 1, wherein the plurality of flow paths flow radially from one side of the showerhead to an opposite side of the showerhead.

5. The substrate processing system of claim 4 , wherein the plurality of flow paths define linear paths.

6. The substrate processing system of claim 4 , wherein the plurality of flow paths define a curved path.

7. 7. The substrate processing system of claim 6, wherein the plurality of flow paths define sinusoidally shaped paths.

8. 10. The substrate processing system of claim 1, wherein the secondary gas plenum comprises: The first plenum; A second plenum; and a flow restriction disposed between the first plenum and the second plenum; A substrate processing system comprising:

9. 9. The substrate processing system according to claim 8, wherein the flow rate restricting unit: a first plurality of walls; a plurality of slots defined between the first plurality of walls; A substrate processing system comprising:

10. 10. The substrate processing system of claim 9, wherein the first plurality of walls are arcuate.

11. 10. The substrate processing system of claim 9, further comprising a second plurality of walls disposed around the through hole of the second plenum.

12. 12. The substrate processing system of claim 11, wherein the second plurality of walls are cylindrical.

13. 9. The substrate processing system of claim 8, wherein the secondary gas injector is in fluid communication with the second plenum.

14. 14. The substrate processing system of claim 13, further comprising a plurality of restrictions disposed between the second plenum and the secondary gas injector.

15. 10. The substrate processing system of claim 1, wherein the plurality of flow paths include an inlet and an outlet, the inlets of the plurality of flow paths being located on one side of the showerhead, the outlets of the plurality of flow paths being located between the inlets on the one side, and the plurality of flow paths connecting to the inlets, traversing the showerhead, and turning back across the showerhead to return to the outlets.

16. 10. The substrate processing system of claim 1, further comprising: a second chamber disposed above the first chamber, and the showerhead is disposed between the first chamber and the second chamber; a coil disposed around the second chamber; an RF generator connected to the coil to generate a plasma in the second chamber; A substrate processing system comprising:

17. 10. The substrate processing system of claim 1, wherein at least one of the flow paths comprises a flow restriction.

18. 10. The substrate processing system of claim 1, wherein the heat transfer fluid comprises a liquid.

19. 10. The substrate processing system of claim 1, wherein the heat transfer fluid comprises a gas.

20. 10. The substrate processing system of claim 1, wherein the heat transfer fluid does not flow into the first chamber.

21. 10. The substrate processing system of claim 1, wherein the secondary gas injector extends a predetermined distance from a bottom surface of the showerhead, the predetermined distance being within a range of 0.1 inches (2.54 mm) to 1.5 inches (38.1 mm).

22. 10. The substrate processing system of claim 1, wherein the through-holes have a diameter in the range of 0.05 inches (1.27 mm) to 0.3 inches (7.62 mm).

23. 10. The substrate processing system of claim 1, wherein the showerhead comprises a cylindrical wall extending from a bottom surface of the showerhead and disposed radially outward of the plurality of through-holes and the plurality of secondary gas injectors.

24. 10. The substrate processing system of claim 1, wherein the showerhead comprises a cylindrical wall extending upward from a top surface of the showerhead and disposed radially outward of the plurality of through-holes and the plurality of secondary gas injectors.

25. 10. The substrate processing system of claim 1, further comprising: a first O-ring disposed between a top surface of the showerhead and the upper chamber; and a second O-ring disposed between the bottom surface of the showerhead and the lower chamber.

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