Semiconductor device

Abstract

To provide a semiconductor device with improved switching performance.SOLUTION: A semiconductor device according to an embodiment includes a first terminal and a second terminal, a first conductive member connected to the first terminal, a semiconductor chip provided on the first conductive member, a second conductive member having a first region facing the semiconductor chip in a first direction from the first conductive member toward the semiconductor chip, and a second region located between the first region and the second terminal, a first resin covering the semiconductor chip and provided on the second conductive member, a conductive plate provided at least partially on the first resin, and a columnar portion connected to the conductive plate and extending in the first direction along a side surface of the first resin.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] FIELD An embodiment of the present invention relates to a semiconductor device. [Background technology]

[0002] 2. Description of the Related Art In semiconductor packages, a structure in which metal plates are provided on the top and bottom surfaces of the package to improve heat dissipation is known.

[0003] Also, a structure is known in which a magnetic shielding plate is provided between a plurality of chips in order to reduce mutual inductance between a plurality of current paths flowing within a semiconductor package. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Laid-Open No. 2011-114176 [Patent Document 2] JP 2015-198188 A Summary of the Invention [Problem to be solved by the invention]

[0005] The problem to be solved by the present invention is to provide a semiconductor device with improved switching performance. [Means for solving the problem]

[0006] The semiconductor device of the embodiment comprises a first terminal and a second terminal, a first conductive member connected to the first terminal, a semiconductor chip provided on the first conductive member, a second conductive member having a first region facing the semiconductor chip in a first direction from the first conductive member to the semiconductor chip and a second region located between the first region and the second terminal, a first resin covering the semiconductor chip and provided on the second conductive member, a conductive plate provided on at least a portion of the first resin, and a columnar portion connected to the conductive plate and extending in the first direction along a side surface of the first resin.

[0007] In another embodiment, a semiconductor device comprises a first terminal and a second terminal, a first conductive member connected to the first terminal, a semiconductor chip provided on the first conductive member, a second conductive member having a first region facing the semiconductor chip in a first direction from the first conductive member to the semiconductor chip and a second region located between the first region and the second terminal, a first resin covering the semiconductor chip and provided on the second conductive member, and a conductive plate provided on the first resin, at least a portion of which faces the second region in the first direction. [Brief explanation of the drawings]

[0008] [Figure 1] 1 is a perspective view of a semiconductor device according to a first embodiment. [Figure 2] 1 is a top view of a semiconductor device according to a first embodiment. [Figure 3] 1 is a top view of a semiconductor device according to a first embodiment. [Figure 4] 1 is a cross-sectional view taken along line A1-A2 of the semiconductor device according to the first embodiment. [Figure 5A] 2 is a cross-sectional view taken along line B1-B2 of the semiconductor device according to the first embodiment. FIG. [Figure 5B] 10 is another example of a cross-sectional view taken along line B1-B2 of the semiconductor device according to the first embodiment. [Figure 6A] 1 is a cross-sectional view taken along line C1-C2 of the semiconductor device according to the first embodiment. [Figure 6B] 1 is a cross-sectional view taken along line C1-C2 of the semiconductor device according to the first embodiment. [Figure 7] FIG. 4 is a cross-sectional view of a semiconductor device according to a first modified example of the first embodiment. [Figure 8] FIG. 10 is a perspective view of a semiconductor device according to a second modification of the first embodiment. [Figure 9] FIG. 10 is a perspective view of a semiconductor device according to a third modified example of the first embodiment. [Figure 10] FIG. 10 is a perspective view of a semiconductor device according to a second embodiment. [Figure 11] FIG. 10 is a cross-sectional view taken along line D1-D2 of the semiconductor device according to the second embodiment. [Figure 12] FIG. 10 is a cross-sectional view taken along line E1-E2 of the semiconductor device according to the second embodiment. [Figure 13] FIG. 10 is a perspective view of a semiconductor device according to a third embodiment. [Figure 14] FIG. 10 is a circuit diagram of a semiconductor device according to a third embodiment. [Figure 15] FIG. 10 is a top view of a semiconductor device according to a third embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0009] Hereinafter, embodiments of the present invention will be described with reference to the drawings.

[0010] The drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the size ratio between parts, etc. are not necessarily the same as those in reality. Furthermore, even when the same part is shown, the dimensions and ratios may be different depending on the drawing.

[0011] In the present specification and the drawings, elements similar to those described above with reference to the previous drawings are designated by the same reference numerals, and detailed descriptions thereof will be omitted as appropriate.

[0012] The direction from the first conductive member 20 toward the semiconductor chip 40 is referred to as the Z direction (first direction). The direction perpendicular to the Z direction is referred to as the X direction (second direction), and the direction intersecting the X and Z directions is referred to as the Y direction (third direction). The semiconductor device 100 shown in FIG. 2 is a cross-sectional view taken along the XZ plane. In this embodiment, the X, Y, and Z directions are shown orthogonal to each other, but they are not limited to being orthogonal as long as they intersect with each other. For the sake of explanation, the positive direction of the Z direction is referred to as "up" and the negative direction of the Z direction is referred to as "down." However, the "up" and "down" directions are not limited to the direction of gravity or the directions when the semiconductor device is mounted.

[0013] (First embodiment) 1 is a perspective view showing a semiconductor device 100 according to the first embodiment. The semiconductor device 100 has a first insulating portion 10, a first terminal p1 protruding from the first insulating portion 10, a conductive plate 50 provided on the first insulating portion 10, and a columnar portion 52 connected to the conductive plate 50. The semiconductor device 100 is, for example, a Surface-Mount Device (SMD) package.

[0014] The first insulating section 10 encapsulates the semiconductor chip 40 and other components not shown in FIG. 1. The first insulating section 10 is made of, for example, resin. The first insulating section 10 has side surfaces 10w that intersect with the X direction or the Y direction. FIG. 1 shows an example in which the first insulating section 10 has a total of four side surfaces 10w in the positive and negative X directions and the positive and negative Y directions.

[0015] The first terminal p1 protrudes from the first insulating portion 10 at the side surface 10w, enabling electrical connection between the semiconductor device 100 and an external circuit. The first terminal p1 protrudes from the first insulating portion 10 at the side surface 10w in the negative X-direction. The first terminal p1 is one of the external terminals of the semiconductor device 100. Note that the semiconductor device 100 may further have external terminals not shown in FIG. 1 .

[0016] The conductive plate 50 is provided on the first insulating section 10. It is sufficient that the conductive plate 50 is provided on at least a portion of the first insulating section 10. It is desirable that the conductive plate 50 contains a material with excellent electrical conductivity and thermal conductivity. Examples of desirable positions for providing the conductive plate 50 will be described later with reference to FIG. 3.

[0017] The columnar portion 52 is provided continuous with the conductive plate 50. For example, the columnar portion 52 is formed integrally with the conductive plate 50. The columnar portion 52 and the conductive plate 50 need only be connected at least electrically or thermally. The columnar portion 52 has a portion extending in the Z direction. The columnar portion 52 extends in the Z direction along the side surface 10w of the first insulating portion 10. The columnar portion 52 may be spaced apart from the first insulating portion 10 in the X direction, or may be in contact with at least a portion of the first insulating portion 10. Desirably, the columnar portion 52 crosses the side surface 10w of the first insulating portion 10 in the Z direction. Here, "A crosses B in the Z direction" means that A extends from the end of B in the positive direction in the Z direction to the end of B in the negative direction in the Z direction.

[0018] An end portion 54 may be further provided continuous with the columnar portion 52 on the opposite side of the columnar portion 52 from the conductive plate 50. The end portion 54 extends, for example, along a plane (XY plane) intersecting the Z direction. The end portion 54 can be used, for example, as a terminal for connecting the conductive plate 50 and the columnar portion 52 to an external circuit.

[0019] The first terminal p1 (and the second terminal p2 and third terminal p3 shown in FIG. 2 and subsequent figures) is provided on a side surface 10w located in the positive or negative direction in the Y direction. On the other hand, the columnar portion 52 and the end portion 54 are provided on a side surface 10w located in the positive or negative direction in the X direction. It is desirable that the columnar portion 52 be provided on a side surface 10w different from the side surface 10w on which the first terminal p1 or a second terminal p2 or a third terminal p3 described later with reference to FIG. 2 are provided, in order to prevent interference (e.g., contact) between the first terminal p1 and the end portion 54 and to prevent a short circuit. Furthermore, the columnar portion 52 and the end portion 54 are provided, for example, spaced apart in the positive direction in the Y direction from the side surface 10w on which the first terminal p1 is provided. In other words, the columnar portion 52 is connected to the conductive plate 50 at a position shifted in the Y direction from a corner of the conductive plate 50 in the XY plane. By separating the first terminal p1 from the columnar portion 52 and the end portion 54 in the Y direction, the first terminal p1 can be electrically insulated from the columnar portion 52 and the end portion 54 more reliably.

[0020] 1 shows an example in which four columnar portions 52 and four end portions 54 are provided, but the number of columnar portions 52 and four end portions 54 is not limited to this. Regarding the location where the columnar portions 52 are provided, while FIG. 1 shows an example in which the columnar portions 52 are provided near the corners of the semiconductor device 100, the location is not limited to this. To ensure better insulation from the first terminal p1 and the like, the columnar portions 52 may be provided farther away from the first terminal p1. Furthermore, at least some of the multiple columnar portions 52 and end portions 54 may be replaced with, for example, wires.

[0021] FIG. 2 is a top view of the semiconductor device 100 according to this embodiment.

[0022] 1 is provided in the negative Y direction. Meanwhile, a second terminal p2 is provided in the positive Y direction. A third terminal p3 is further provided on the same side as the second terminal p2. The semiconductor device 100 includes, for example, a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) inside a package, with the first terminal p1 being, for example, a drain terminal, the second terminal p2 being, for example, a source terminal, and the third terminal p3 being, for example, a gate terminal.

[0023] In FIG. 2, the first insulating portion 10 is not shown because it is located below the conductive plate 50. The conductive plate 50 and the first insulating portion 10 only need to overlap at least partially in the Z direction. For example, the side surface 50w of the conductive plate 50 and the side surface 10w of the first insulating portion 10 may overlap partially in the Z direction. In FIG. 2, the side surface 10w of the first insulating portion 10 is provided, for example, at a position indicated by a dotted line between the conductive plate 50 and the columnar portion 52. In other words, the columnar portion 52 protrudes from the side surface 10w of the first insulating portion 10 in the positive or negative X direction.

[0024] 3 is a top view of the semiconductor device 100 according to this embodiment, and shows the first insulating portion 10, the conductive plate 50, the columnar portion 52, and the end portion 54 in a see-through manner (the conductive plate 50, the columnar portion 52, and the end portion 54 are shown as areas surrounded by dotted lines). That is, the semiconductor chip 40 and conductive members that are covered by the first insulating portion 10 in FIGS. 1 and 2 are shown in FIG. 3.

[0025] A first conductive member 20 is provided continuous with the first terminal p1. The first conductive member 20 is a metal member such as a die pad. A semiconductor chip 40 is provided on the first conductive member 20, and a second conductive member 22 is further provided on the semiconductor chip 40.

[0026] The second conductive member 22 is connected to the second terminal p2 and has a first region 22a and a second region 22b. The first region 22a is a region that overlaps with the semiconductor chip 40 in the Z direction. The second region 22b is provided between the first region 22a and the second terminal p2. Note that, for example, a structure shown in FIG. 5 (described later) may be provided between the second region 22b and the second terminal p2, or the second region 22b to the second terminal p2 may be integrally formed.

[0027] The semiconductor chip 40 includes a transistor such as a MOSFET, and a gate pad of the semiconductor chip 40 is connected to, for example, the third terminal p3. A third conductive member 24 is provided on the semiconductor chip 40. The third conductive member 24 has a first region 24a and a second region 24b. The first region 24a overlaps with the semiconductor chip 40 in the Z direction. The second region 24b is provided between the first region 24a and the third terminal p3.

[0028] The first terminal p1 and the first conductive member 20 have a potential equal to, for example, the drain potential, the second terminal p2 and the second conductive member 22 have a potential equal to, for example, the source potential, and the third terminal p3 and the third conductive member 24 have a potential equal to, for example, the gate potential.

[0029] In addition, in the explanations from Figure 3 onwards, a so-called drain-down structure will be described in which the second terminal p2 and the third terminal p3 (e.g., a source terminal and a gate terminal) are connected to electrodes on the top surface of the semiconductor chip 40, but the present invention can also be applied to a source-down structure.

[0030] FIG. 4 is a cross-sectional view taken along the XZ plane passing through the line A1-A2 shown in FIGS.

[0031] The semiconductor chip 40 is provided on the first conductive member 20 via a bonding portion 32. The first region 22a of the second conductive member 22 is provided on the semiconductor chip 40 via a bonding portion .

[0032] The semiconductor chip 40 has electrodes on its upper and lower surfaces. The semiconductor chip 40 includes, for example, a MOSFET, and has a source electrode and a gate pad spaced apart from the source electrode on its upper surface, and a drain electrode on its lower surface. For example, the first conductive member 20 is electrically connected to the drain electrode of the semiconductor chip 40, and the second conductive member 22 is electrically connected to the source electrode of the semiconductor chip 40.

[0033] The first insulating portion 10 covers the semiconductor chip 40. In other words, the first insulating portion 10 seals the semiconductor chip 40. The first insulating portion 10 is provided on the second conductive member 22, and the conductive plate 50 is provided on the first insulating portion 10.

[0034] For example, the conductive plate 50 has a length in the X direction greater than that of the second conductive member 22. Furthermore, the conductive plate 50 may have a length in the X direction greater than that of the first conductive member 20.

[0035] 4 illustrates an example in which the side surface 10w of the first insulating portion 10 and the side surface 50w of the conductive plate 50 are arranged to overlap at least partially in the Z direction. However, the conductive plate 50 may be arranged to be smaller than the first insulating portion 10 in the XY plane, or may be arranged to protrude partially.

[0036] FIG. 5 is a cross-sectional view taken along the XZ plane passing through the line B1-B2 shown in FIGS.

[0037] First, Fig. 5A will be described, which is a cross-sectional view along the XZ plane passing through the line B1-B2 of the example shown in Fig. 4.

[0038] The semiconductor chip 40 is provided on the first conductive member 20. A joint 32 is interposed between the first conductive member 20 and the semiconductor chip 40. The first region 22a of the second conductive member 22 faces the semiconductor chip 40 in the Z direction. A joint 34 is interposed between the semiconductor chip 40 and the first region 22a. The second region 22b of the second conductive member 22 is located between the first region 22a and the second terminal p2. The second conductive member 22 connects the semiconductor chip 40 and the second terminal p2. An end region p2A is provided between the second region 22b and the second terminal p2, and is formed continuously with the second terminal p2 and in contact with the first insulating portion 10. The second terminal p2 and the end region p2A are, for example, leads (plate-shaped metal members) and may contain the same material as the first terminal p1 and the first conductive member 20.

[0039] The first insulating portion 10 covers the semiconductor chip 40 and is provided on at least the second conductive member 22. The first insulating portion 10 is provided on the first region 22a and the second region 22b of the second conductive member 22.

[0040] The first region 22a and the second region 22b are, for example, integrally formed. A joint 36 is interposed between the second region 22b and the end region p2A, as shown in Fig. 5A, for example. However, the second region 22b and the end region p2A may also be integrally formed.

[0041] The conductive plate 50 has a length in the Y direction greater than that of the second conductive member 22. Therefore, the conductive plate 50 is provided so as to overlap in the Z direction across the first region 22a and the second region 22b of the second conductive member 22. Furthermore, the conductive plate 50 has a length in the X direction greater than that of the second conductive member 22.

[0042] Next, FIG. 5B, which has a different configuration from the examples shown in FIGS. 4 and 5A, will be described. The cross-sectional direction shown in FIG. 5B is the same as that of FIG. 5A. In FIG. 5B, the configuration of the second conductive member 22 differs from that of FIGS. 4 and 5A. The second conductive member 22 has a first region 22a connected to the semiconductor chip 40 and a second region 22b located between the first region 22a and the second terminal p2. The second region 22b is a wire or ribbon formed by, for example, bonding. The first region 22a is electrically connected to, for example, a source electrode on the upper surface of the semiconductor chip 40. The wire is, for example, a conductive material having a circular cross section perpendicular to the extension direction, and the ribbon is, for example, a conductive material having an elliptical or oval cross section perpendicular to the extension direction.

[0043] The end region p2A is formed continuously with the second terminal p2. For example, the second region 22b is a wire, one end of which is connected to the semiconductor chip 40 by bonding, and the other end of which is connected to the end region p2A by bonding.

[0044] That is, as shown in FIGS. 5A and 5B, the structure connecting the semiconductor chip 40 and the second terminal p2 may be a preformed plate-shaped metal member, or may include a bonded wire or ribbon. Here, "plate-shaped" refers to a shape in which the length (thickness) in the Z direction is smaller than the dimensions in the X and Y directions. The plate-shaped metal member is pre-bent as necessary and is then provided on the semiconductor chip 40 via the joint 34. From the viewpoint of heat dissipation, it may be desirable to use a plate-shaped metal member that allows current to flow over a wider area. On the other hand, as with wires or ribbons, the shape of the second conductive member 22 may be determined by bonding from the semiconductor chip 40 to the second terminal p2.

[0045] 5A and 5B, the positional relationship between the conductive plate 50 and the second conductive member 22 will be described. While Fig. 5A shows an example in which the conductive plate 50 is provided on the entire surface of the first insulating section 10, the conductive plate 50 may be provided on at least a portion of the first insulating section 10.

[0046] The conductive plate 50 is provided at a position where at least a portion thereof overlaps with the second region 22b in the Z direction. In other words, at least a portion of the conductive plate 50 faces the second region 22b in the Z direction with the first insulating portion 10 interposed therebetween. Furthermore, it is desirable that at least a portion of the conductive plate 50 faces the first region 22a in the Z direction with the first insulating portion 10 interposed therebetween. It is desirable that the area where the conductive plate 50 and the second conductive member 22 face each other with the first insulating portion 10 interposed therebetween is large.

[0047] 5A and 5B, the desirable positional relationship between the conductive plate 50 and the second conductive member 22 is the same. In both cases of Fig. 5A and 5B, an electrical signal transmitted between the semiconductor chip 40 and the second terminal p2 passes through the second region 22b of the second conductive member 22. It is desirable for the conductive plate 50 to overlap in the Z direction with the current path that passes through the second region 22b in order to improve switching performance, as will be described later.

[0048] 6 is a cross-sectional view taken along the XZ plane passing through the line C1-C2 shown in FIG. 1-3, showing the structure between the first insulating portion 10 and the conductive plate 50 and the columnar portion 52.

[0049] 6A shows an example in which an adhesive portion 60 is provided between the first insulating portion 10 and the conductive plate 50. The adhesive portion 60 contacts the first insulating portion 10 and the conductive plate 50, and fixes the positions of the conductive plate 50 and the columnar portion 52 relative to the first insulating portion 10. In other words, it prevents the positions of the conductive plate 50 and the columnar portion 52 from shifting relative to the first insulating portion 10. The adhesive portion 60 only needs to be provided in at least a portion between the first insulating portion 10 and the conductive plate 50.

[0050] As shown in Fig. 6A, the first insulating portion 10 and the columnar portion 52 may be in direct contact with each other, or although not shown in Fig. 6A, a gap may be provided between the first insulating portion 10 and the columnar portion 52. As shown in Fig. 6B, a gap may also be provided between the first insulating portion 10 and the columnar portion 52.

[0051] 6B shows an example of another structure that can prevent the conductive plate 50 and the columnar portion 52 from being misaligned with respect to the first insulating portion 10. The columnar portion 52 has a protrusion 50p that protrudes in the negative X-direction on the surface of the columnar portion 52 that faces the first insulating portion 10. A recess 10c is provided on the side surface 10w of the first insulating portion 10 at a position corresponding to the protrusion 50p. In other words, the recess 10c of the first insulating portion 10 is fitted with the protrusion 10p of the columnar portion 52.

[0052] 6B shows an example in which the first insulating portion 10 has a recess 10c and the columnar portion 52 has a protrusion 10p, but the first insulating portion 10 may have a protrusion and the columnar portion 52 may have a recess. Furthermore, when a recess is provided in the columnar portion 52, this also includes the case in which a hole penetrating the columnar portion 52 in the X direction is provided.

[0053] In either of the structures shown in FIGS. 6A and 6B, the positions of the conductive plate 50 and the columnar portion 52 relative to the first insulating portion 10 are prevented from shifting.

[0054] An example of the material for each component will be described below.

[0055] The first insulating portion 10 is, for example, a sealing resin containing epoxy resin.

[0056] The first conductive member 20 is made of a metal such as an alloy containing Cu, and the second conductive member 22 is made of a metal such as an alloy containing Cu.

[0057] The conductive plate 50 is made of a metal such as an alloy containing Cu.

[0058] The semiconductor chip includes a semiconductor substrate containing at least one element selected from the group consisting of Si, SiC, C, GaAs, and Ge.

[0059] The joints 32, 34, 36 include, for example, solder.

[0060] The adhesive portion 60 includes, for example, a silicone adhesive. The silicone adhesive is an adhesive containing silicone.

[0061] Referring again to FIG. 5A, the operation of semiconductor device 100 will be described.

[0062] Although an example in which an electrical signal is transmitted from the first terminal p1 to the second terminal p2 will be described, the direction in which the electrical signal is transmitted is not limited to this. Also, although an example in which the semiconductor chip 40 includes a MOSFET will be described, the type of semiconductor chip 40 is not limited to a MOSFET.

[0063] An electric signal is input to an electrode provided on the underside of the semiconductor chip 40 through the first terminal p1 and the first conductive member 20. For example, a drain electrode of a MOSFET is provided on the underside of the semiconductor chip 40. Meanwhile, the potential of the gate electrode of the MOSFET of the semiconductor chip 40 is controlled by controlling the potential applied to the third terminal p3 shown in FIG.

[0064] When the potential of the gate electrode of the MOSFET of the semiconductor chip 40 is higher than the threshold voltage, the semiconductor chip 40 outputs an electrical signal from the source electrode provided on the upper surface. Referring again to Fig. 5A, the output electrical signal is transmitted to the first region 22a of the second conductive member 22, and is output from the second terminal p2 to an external circuit via the second region 22b.

[0065] An example of current flow when the electrical signal is a current will be described with reference to Figure 5A. First, current flows in the positive Y direction from the first terminal p1 to the first conductive member 20. Current also flows in the positive Z direction from the first conductive member 20 to the first region 22a of the second conductive member via the semiconductor chip 40. Current flows in the positive Y direction from the first region 22a to the second region 22b (the second conductive member 22 may be bent and may include a portion that flows along the Z direction). Current flows from the second region 22b to the second terminal p2.

[0066] For example, as described above, a current path is formed from the first terminal p1 to the second terminal p2. The cross section shown in FIG. 5A continues in the depth direction (X direction) with, for example, a similar cross-sectional structure, and the current path flowing from the first terminal p1 to the second terminal p2 can be considered to exist not only in the YZ plane shown in FIG. 5A but also in the depth direction (X direction). Here, the current path does not necessarily mean a path through which current actually flows, but also includes a virtual current path through which current can flow. In addition, there are many other current paths in the semiconductor device 100, such as the internal wiring of the semiconductor chip 40 and the current passing through the third terminal p3 shown in FIG. 3.

[0067] It is known that multiple current paths mutually induce electromotive forces through the magnetic fields generated by the current. When the induced electromotive force causes a change in current over time, such as during switching, current can begin to flow through a virtual current path.

[0068] Regarding the current paths from the first terminal p1 to the second terminal p2, mutually induced electromotive forces are generated between the multiple current paths aligned in the YZ plane and in the depth direction (X direction). If two of the multiple current paths located between the first terminal p1 and the second terminal p2 are conveniently referred to as the first path I1 and the second path I2 (not shown), mutually induced electromotive forces are generated between the first path I1 and the second path I2. That is, for example, when the semiconductor device 100 is turned off, if the current flowing through the first path I1 decreases, the magnetic field generated by the current flowing through the first path I1 decreases, and the second path I2 generates an electromotive force in a direction that increases the current so as to mitigate the time change of the magnetic field. The more rapidly the current flowing through the first path I1 decreases, the larger the induced electromotive force generated in the second path I2. The same relationship holds even if the first path I1 and the second path I2 are interchanged. Mutually induced electromotive forces can also be generated when the semiconductor device 100 is turned on.

[0069] In other words, when a semiconductor device is turned off (or on), an induced electromotive force is generated in a direction that decreases (increases) the current in opposition to the turn-on (turn-off) action, and the voltage waveform during switching may oscillate. Generally, the greater the induced electromotive force generated between multiple current paths (= the greater the mutual inductance), the more likely it is that an induced electromotive force will be generated during switching of the semiconductor device, and the oscillation of the voltage waveform may result in a deterioration of switching performance.

[0070] The semiconductor device 100 according to this embodiment can provide a semiconductor device with improved switching performance by suppressing oscillation of the voltage waveform due to induced electromotive force during switching. The semiconductor device 100 includes a conductive plate 50, and current flows through the conductive plate 50 in a direction that alleviates the time change of the magnetic field during switching, thereby reducing the induced electromotive force (reducing mutual inductance) generated among multiple current paths between the first terminal p1 and the second terminal p2, thereby reducing oscillation during switching. Reducing oscillation of the voltage waveform enables stable switching operation, and good switching characteristics can be maintained even when the switching frequency is increased.

[0071] The use of the conductive plate 50 to reduce the effect of changes in the magnetic field during switching will be described with reference to Fig. 5A. The portion of the current path between the first terminal p1 and the second terminal p2 that flows through the first region 22a and the second region 22b will be described. As an example, consider the case where current flows from the first region 22a to the second region 22b.

[0072] The current flowing from the first region 22a to the second region 22b generates a vortex-shaped magnetic field around it. As the current changes over time during switching, the magnetic field generated around the current also changes over time, generating an induced electromotive force in the surrounding current path. In this embodiment, assuming a virtual closed circuit in the conductive plate 50, the time change in the magnetic field penetrating the closed circuit in the Z direction also generates an induced electromotive force in the closed circuit. In other words, eddy currents are generated in the closed circuit of the conductive plate 50 in a direction that reduces the time change in the magnetic field. A magnetic field is also generated by the current flowing through the conductive plate 50. The magnetic field generated by the current flowing through the conductive plate 50 is generated in a direction that reduces the time change in the magnetic field. Therefore, by reducing the time change in the magnetic field, the induced electromotive force in the current path flowing from the first region 22a to the second region 22b can be reduced. By providing the conductive plate 50, oscillation during switching can be suppressed.

[0073] For example, the induced electromotive force between current paths flowing along the XY plane is mainly generated by the time-varying magnetic field along the Z direction. This is because the magnetic field penetrating a closed circuit in the XY plane has a directional component along the Z direction. When eddy currents are generated in the conductive plate 50, the eddy currents generate a magnetic field along the Z direction. Depending on the direction of rotation of the eddy current vortex, the magnetic field will be either positive or negative in the Z direction. In other words, the eddy currents in the XY plane generated in the conductive plate 50 can generate a magnetic field in a direction that alleviates the time-varying magnetic field in the Z direction. To reduce the induced electromotive force between current paths flowing along the XY plane, it is effective to provide a conductive plate 50 aligned along the XY plane, as in the semiconductor device 100 of this embodiment.

[0074] The current generated in the conductive plate 50 is not limited to an eddy current. For example, the conductive plate 50 may be connected to an external circuit via the columnar portion 52 and the end portion 54 shown in FIG. 1, and a current may flow between the conductive plate 50 and the external circuit.

[0075] At least a portion of the conductive plate 50 overlaps with the first region 22a or the second region 22b in the Z direction, and can suppress the change over time of the magnetic field generated by the current flowing through the first region 22a or the second region 22b.

[0076] When the semiconductor device 100 is mounted on, for example, a substrate, at least a portion of the first conductive member 20 comes into contact with the substrate. The time change of the magnetic field generated by the current flowing through the first conductive member 20 may be reduced by wiring provided inside the substrate.

[0077] On the other hand, the current flowing through the second conductive member 22 flows through a current path away from the substrate or the like in the positive Z direction, and therefore the effect of reducing the time change in the magnetic field due to the substrate may be smaller than that of the first conductive member 20. According to the semiconductor device 100 of this embodiment, the time change in the magnetic field for the current flowing through the second conductive member 22 can be reduced by the conductive plate 50 that is provided on the first insulating part 10 and is electrically insulated from the second conductive member 22.

[0078] In the semiconductor device 100 according to this embodiment, the conductive plate 50, the columnar portion 52, and the end portion 54 serve as paths for heat flow, thereby suppressing local overheating and improving the reliability of the semiconductor device. As an example, a case will be described in which the semiconductor device 100 is mounted on a substrate or the like and the end portion 54 comes into contact with the substrate or the like.

[0079] The current density of the current flowing through the semiconductor chip 40 in the Z direction from the first conductive member 20 to the second conductive member 22 may differ in the XY plane between the center and the end portion of the semiconductor chip 40. For example, the current density at the center of the semiconductor chip 40 may be greater than the current density at the end portion of the semiconductor chip 40, and the amount of heat generated at the center may be greater than the amount of heat generated at the end portion.

[0080] Furthermore, the amount of heat generated differs between the portion where the semiconductor chip 40 is provided and the other portion in the XY plane. The portion where the semiconductor chip 40 is provided generally generates more heat than the portion where the semiconductor chip 40 is not provided. In other words, depending on the arrangement of the semiconductor chip 40 and the unevenness of the current density inside the semiconductor chip 40, there are cases where areas of the semiconductor device 100 that generate a lot of heat and areas that generate a little heat.

[0081] According to the semiconductor device 100 of this embodiment, the conductive plate 50 contains a material with a higher thermal conductivity than, for example, the first insulating section 10, and heat is easily diffused in the conductive plate 50. Therefore, even if the heat distribution inside the semiconductor device 100 is uneven in the XY plane, the heat conducted to the conductive plate 50 is quickly diffused in the conductive plate 50, thereby making the amount of heat generated in the XY plane more uniform. Furthermore, by diffusing heat widely in the conductive plate 50, the contact area between the environment, including the surrounding air, and the high-heat portion increases, making it easier to dissipate heat. This makes it possible to suppress local overheating in the semiconductor device 100 and improve the reliability of the semiconductor device.

[0082] Furthermore, the conductive plate 50 can be thermally connected to an external circuit via the columnar portion 52 and the end portion 54. The external circuit functions as a heat sink, and the heat diffused in the conductive plate 50 is further conducted to the outside of the semiconductor device 100. This prevents heat from accumulating in the conductive plate 50, and also allows the conductive plate 50 to absorb heat from the first insulating portion 10.

[0083] Furthermore, according to the semiconductor device 100 of this embodiment, the conductive plate 50 can be electrically connected to an external circuit via the columnar portion 52 and the end portion 54. For example, in FIG. 1 , it is possible to connect external circuits to each other by crossing the semiconductor device 100 from the negative direction to the positive direction in the X direction, or vice versa. In other words, a circuit located in the positive direction of the X direction and a circuit located in the negative direction of the X direction can be connected to the semiconductor device 100 via the end portion 54, the columnar portion 52, the conductive plate 50, the columnar portion 52, and the end portion 54, in that order. This allows for a shorter wiring layout for the circuits around the semiconductor device 100.

[0084] For comparison, if the semiconductor device does not have the columnar portion 52 and the end portion 54, it is necessary to provide wiring that does not traverse the semiconductor device 100 from the negative direction to the positive direction in the X direction or vice versa, but that bypasses the semiconductor device 100. Therefore, an area is required on the substrate on which the semiconductor device is mounted to provide the wiring for the bypass.

[0085] According to the semiconductor device 100 of this embodiment, the wiring layout can be shortened, thereby enabling the semiconductor device to be more highly integrated.

[0086] (First Modification of the First Embodiment) 7 is a cross-sectional view showing a semiconductor device 101 according to a first modification of the first embodiment. The cross section is taken at the same position as the cross section taken along line B1-B2 in FIG. 1-3. Explanations of parts common to the semiconductor device 100 according to the first embodiment will be omitted.

[0087] In the semiconductor device 101 according to this modification, the conductive plate 50 provided on the first insulating portion 10 has a recess 50c. The first insulating portion 10 also has a protrusion 10p at a position overlapping the recess 50c in the Z direction. The protrusion 10p and the recess 50c fit together. The recess 50c may be a hole that penetrates the conductive plate 50 in the Z direction.

[0088] The semiconductor device 101 according to this modification allows for easy and reliable alignment of the conductive plate 50 and the first insulating portion 10. When the conductive plate 50 is provided on the first insulating portion 10 so that the protrusions 10p and the recesses 50c fit together, misalignment can be suppressed to less than the difference in dimensions between the protrusions 10p and the recesses 50c. For example, when the protrusions 10p and the recesses 50c are designed to fit together perfectly, it is theoretically possible to prevent misalignment between the conductive plate 50 and the first insulating portion 10.

[0089] The semiconductor device 101 according to this modification does not necessarily require a configuration for suppressing misalignment between the conductive plate 50 and the first insulating portion 10 as shown in Fig. 6. Therefore, for example, the step of providing the adhesive portion 60 in Fig. 6A and the step of providing the recess 10c in the first insulating portion 10 in Fig. 6B can be omitted.

[0090] The shape of the protrusions 10p is not limited to the shape shown in FIG. 7, but preferably the protrusions 10p extend along the Z direction. The first insulating section 10 is formed, for example, by pouring the material that constitutes the first insulating section 10 into a mold and then removing it from the mold. If the protrusions 10p extend along the Z direction, they can be removed without getting caught when the mold is removed along the Z direction. In other words, it is only necessary to change the shape of the mold into which the material that constitutes the first insulating section 10 is poured, and there is no need to add an additional process for forming the protrusions 10p.

[0091] (Second Modification of the First Embodiment) 8 shows a perspective view of a semiconductor device 102 according to a second modification of the first embodiment. Description of parts common to the semiconductor device 100 according to the first embodiment will be omitted.

[0092] In the semiconductor device 102 according to this modification, a groove 10g is provided in the side surface 10w of the first insulating portion 10, running vertically through the side surface 10w. Here, the groove 10g is defined as follows for the side surface 10w located in the positive X direction, for example: the groove 10g is a space located between the first insulating portion 10 and a YZ plane including the side surface 10w. It is desirable that the groove 10g extend along the Z direction.

[0093] 8, a groove portion 10g is formed at a position overlapping in the Z direction with the region surrounded by the dotted line on the conductive plate 50. A columnar portion 52 is provided along the groove portion 10g. The groove portion 10g and the columnar portion 52 are interlocked. In other words, at least a portion of the columnar portion 52 is located inside the semiconductor device 102 relative to the side surface 10w of the first insulating portion 10. "More inside the semiconductor device 102" means, for example, closer to the semiconductor chip 40 of the semiconductor device 102.

[0094] In the semiconductor device 102 according to this modification, the columnar portion 52 fits into the groove portion 10g, thereby preventing the conductive plate 50 from shifting in position relative to the first insulating portion 10. In FIG. 8, for example, the conductive plate 50 is prevented from shifting in the Y direction.

[0095] Furthermore, when the grooves 10g are provided along the Z direction, it is possible to form the first insulating section 10 having the grooves 10g by changing the shape of the mold for forming the first insulating section 10. Therefore, it is not necessary to form the grooves 10g by cutting the first insulating section 10 later, and the manufacturing process can be shortened.

[0096] (Third Modification of the First Embodiment) 9 is a perspective view of a semiconductor device 103 according to a third modification of the first embodiment. Description of parts common to the semiconductor device 100 according to the first embodiment will be omitted.

[0097] The columnar portion 52 of the semiconductor device 103 according to this modification is formed so that the length in the Y direction is greater than the length in the Z direction. In the columnar portion 52 shown in Figures 1 and 8, the length in the Z direction is greater than the length in the Y direction, but the shape of the columnar portion 52 is not limited to this.

[0098] 9, the end portion 54 has the same length in the Y direction as the columnar portion 52. Note that the end portion 54 may have a length in the Y direction different from that of the columnar portion 52.

[0099] According to the semiconductor device 103 of this modification, the time change of the magnetic field can be further suppressed, thereby further improving the switching performance of the semiconductor device. By providing the columnar portion 52 widely on the side surface 10w of the first insulating portion 10, the time change of the magnetic field due to the current flowing through the columnar portion 52 can also be suppressed.

[0100] 1, for example, the columnar portion 52 in this modification has a longer length in the Y direction, and the magnetic field penetrating the columnar portion 52 in the X direction is stronger. In addition to the current induced in the conductive plate 50 by the change in the magnetic field, a larger current can also be induced in the columnar portion 52.

[0101] Furthermore, the conductive plate 50 and the columnar portion 52 intersect. For example, the conductive plate 50 and the columnar portion 52 are perpendicular to each other. Therefore, the direction of the magnetic field generated by the current flowing through the conductive plate 50 and the direction of the magnetic field generated by the current flowing through the columnar portion 52 are different.

[0102] The eddy currents generated in the conductive plate 50 intersecting the Z direction are excellent in suppressing the induced electromotive force between current paths along the XY plane, for example. On the other hand, the eddy currents generated in the columnar portion 52 intersecting the X direction are excellent in suppressing the induced electromotive force between current paths along the YZ plane, for example.

[0103] There are various shapes of the current path flowing from the first terminal p1 to the second terminal p2, and the direction of the generated magnetic field may also be diverse. By having both the conductive plate 50 intersecting in the Z direction and the columnar portion 52 intersecting in the X direction, it is possible to enhance the effect of mitigating the time change of the magnetic field for various internal structures of the semiconductor device.

[0104] According to the semiconductor device 103 of this modified example, currents such as eddy currents are easily induced in the columnar portion 52, which makes it possible to improve the switching performance of the semiconductor device even when current paths in more diverse directions are expected.

[0105] (Second embodiment) 10 is a perspective view showing a semiconductor device 200 according to the second embodiment. Explanation of parts common to the semiconductor device 100 according to the first embodiment will be omitted.

[0106] The semiconductor device 200 according to this embodiment further includes a second insulating portion 12 that covers the conductive plate 50 and the columnar portion 52. The second insulating portion 12 is made of, for example, resin. The end portion 54 protrudes from the second insulating portion 12 at a side surface 12w of the second insulating portion 12.

[0107] FIG. 11 shows a cross-sectional view along the XZ plane passing through the line D1-D2 shown in FIG.

[0108] The conductive plate 50 is provided on the first insulating portion 10, and the second insulating portion 12 is provided on the conductive plate 50. The second insulating portion 12 contacts the side surface 50w of the conductive plate 50. The first insulating portion 10 and the second insulating portion 12 are formed continuously, but the portion that overlaps with the conductive plate 50 in the negative Z direction is considered to be the first insulating portion 10. The first insulating portion 10 and the second insulating portion 12 contain, for example, the same type of material.

[0109] FIG. 12 shows a cross-sectional view along the YZ plane passing through the line E1-E2 shown in FIG.

[0110] The conductive plate 50 preferably has a hole 50h as shown in Fig. 12. The hole 50h is filled with the second insulating portion 12, which contacts the first insulating portion 10 provided below the conductive plate 50. In other words, the first insulating portion 10 and the second insulating portion 12 are continuous with each other through the hole 50h.

[0111] According to the semiconductor device 200 of this embodiment, by providing the second insulating portion 12 that covers the conductive plate 50 and the columnar portion 52, it is possible to more reliably prevent the conductive plate 50 and the columnar portion 52 from being connected to an unintended potential. It is desirable that the conductive plate 50 be electrically insulated from the first terminal p1 and the second terminal p2. By covering the top and side surfaces of the conductive plate 50 with the second insulating portion 12, it is possible to more reliably electrically insulate the conductive plate 50 from the first terminal p1 and the second terminal p2. Furthermore, compared to when the conductive plate 50 and the columnar portion 52 are exposed, contact between the wiring of an external circuit and the conductive plate 50 and the columnar portion 52 is more reliably prevented when the semiconductor device 200 is mounted on a substrate or the like.

[0112] Furthermore, since the conductive plate 50 has the holes 50h, when the first insulating portion 10 and the second insulating portion 12 are integrally formed, the adhesion between the conductive plate 50 and the first insulating portion 10 and the second insulating portion 12 can be further improved. The first insulating portion 10 and the second insulating portion 12 contain, for example, the same sealing resin, and the resin flows through the holes 50h during the sealing process, thereby making the adhesion between the second insulating portion 12 and the conductive plate 50 more reliable.

[0113] (Third embodiment) FIG. 13 is a perspective view showing a semiconductor device 300 according to the third embodiment.

[0114] The semiconductor device 300 has a first terminal p1 and a second terminal p2 that protrude from the first insulating section 10. The first terminal p1 and the second terminal p2 protrude from one side surface (the side surface located in the negative Y direction) of the first insulating section 10, as shown in FIG. 13. In other words, the positional relationship between the first terminal p1 and the second terminal p2 is not limited to the example shown in FIG. 2.

[0115] Furthermore, the shape of the columnar portion 52 can take various forms, as explained in the first embodiment 100 and its modifications. The shape of the columnar portion 52 shown in Figure 13 is merely one example.

[0116] 13 is mounted on, for example, a substrate or a cooler on the negative side of the Z direction. The cooler is, for example, a water-cooled type.

[0117] FIG. 14 shows an example of a circuit configuration of a semiconductor device 300 according to the third embodiment.

[0118] The semiconductor device 300 can be used as part of a power conversion circuit such as an inverter circuit or a bridge circuit. The semiconductor chip 40 of the semiconductor device 300 includes multiple semiconductor chips (a first semiconductor chip 401 and a second semiconductor chip 402). The multiple semiconductor chips are electrically connected by a wiring portion 42. The first semiconductor chip 401 and the second semiconductor chip 402 each have a transistor and a diode. The first semiconductor chip 401 and the second semiconductor chip 402 are, for example, MOSFETs.

[0119] The first terminal p1 is connected to the drain electrode of the first semiconductor chip 401, and the second terminal p2 is connected to the source electrode of the second semiconductor chip 402. For example, a positive voltage is applied to the first terminal p1 with respect to the second terminal. The third terminals p3A and p3B are gate terminals of the first semiconductor chip 401 and the second semiconductor chip 402, respectively. The source electrode of the first semiconductor chip 401 and the drain electrode of the second semiconductor chip 402 are connected by a wiring portion 42, and the potential of the connection point is equal to the potential of the fourth terminal p4. An inductive load (not shown) is connected to the fourth terminal p4 as an external load.

[0120] The operation of the semiconductor device 300 according to this embodiment will be described with reference to FIG.

[0121] The semiconductor device 300 is, for example, an inverter. The first semiconductor chip 401 has a transistor Tr1 and a diode D1. The diode D1 is, for example, a body diode formed by a pn junction provided in a MOSFET of the first semiconductor chip 401. The second semiconductor chip 402 has a transistor Tr2 and a diode D2. The diode D2 is, for example, a body diode formed by a pn junction provided in a MOSFET of the second semiconductor chip 402. An external load (not shown) is connected to a fourth terminal p4.

[0122] An example of the operation of switching the conductive states of the transistors Tr1 and Tr2 will be described below.

[0123] First, a voltage equal to or greater than the threshold voltage is applied to the third terminal p3A. Meanwhile, a voltage smaller than the threshold voltage is applied to the third terminal p3B. The transistor Tr1 of the first semiconductor chip 401 is turned on. The transistor Tr2 of the second semiconductor chip 402 is turned off. As a result, for example, the on-current of the transistor Tr1 flows from the first terminal p1 to the fourth terminal p4 via the drain electrode of the transistor Tr1, the source electrode of the transistor Tr1, the wiring portion 42, and the connection region 26.

[0124] Next, the voltage applied to the third terminal p3A is controlled to a voltage lower than the threshold voltage. Meanwhile, a voltage equal to or higher than the threshold voltage is applied to the third terminal p3B. The transistor Tr1 of the first semiconductor chip 401 is turned off. The transistor Tr2 of the second semiconductor chip 402 is turned on. As a result, for example, the on-current of the transistor Tr2 flows from the fourth terminal p4 to the second terminal p2 via the connection region 26, the wiring portion 42, the drain electrode of the transistor Tr2, and the source electrode of the transistor Tr2.

[0125] Subsequently, when transistor Tr2 is switched from on to off, the current flowing from the fourth terminal p4 to the second terminal p2 is cut off. Furthermore, when transistor Tr1 is subsequently switched from off to on, the on-state current of transistor Tr1 again flows from the first terminal p1 to the fourth terminal. By switching transistors Tr1 and Tr2 on and off in this way, it is possible to control the change over time in the voltage applied to an external load (not shown) connected to the fourth terminal p4.

[0126] As described above, by switching the voltage applied to the third terminals p3A and p3B, the DC voltage applied between the first terminal p1 and the second terminal p2 can be converted into an AC voltage output from the fourth terminal p4.

[0127] Fig. 15 is a top view of a semiconductor device 300 according to the third embodiment. Note that in Fig. 15, the conductive plate 50 and the insulating portion 10 are shown in a see-through manner.

[0128] The semiconductor chip 40 of the semiconductor device 300 has a plurality of semiconductor chips (a first semiconductor chip 401 and a second semiconductor chip 402). The semiconductor device 300 has a wiring portion 42 that connects the semiconductor chips. A plurality of first semiconductor chips 401 and a plurality of second semiconductor chips 402 (six of each in FIG. 15) may also be provided. The first semiconductor chip 401 and the second semiconductor chip 402 have a semiconductor substrate containing, for example, SiC. In other words, a plurality of semiconductor chips (the first semiconductor chip 401 and the second semiconductor chip 402) connected via the wiring portion 42 are provided between the first terminal p1 and the second terminal p2.

[0129] An example will be described in which the first semiconductor chip 401 and the second semiconductor chip 402 have drain electrodes in the negative direction of the Z direction (the side of the first conductive member 20 or the second conductive member 22) in Figure 15, and source electrodes and gate electrodes in the positive direction of the Z direction.

[0130] The first terminal p1 is connected to the drain electrode of the first semiconductor chip 401 of the semiconductor chip 40 via the first conductive member 20. The first conductive member 20 has a first region 20a facing the drain electrode of the first semiconductor chip 401, and a second region 20b located between the first region 20a and the first terminal p1.

[0131] A gate pad is provided on the top surface of the first semiconductor chip 401, and the potential of the gate pad is controlled via a third terminal p3A. A fourth conductive region 24A is provided between the third terminal p3A and the first semiconductor chip 401, and the fourth conductive region 24A and the gate pad of the first semiconductor chip 401 are connected by, for example, a wire W.

[0132] A source electrode on the top surface of the first semiconductor chip 401 is connected to a drain electrode on the bottom surface of the second semiconductor chip 402 via a wiring portion 42. The wiring portion 42 has a wire portion 42w having one end connected to the source electrode of the first semiconductor chip 401 and a pad portion 42p having the other end connected to the wire portion 42w. The second semiconductor chip 402 is provided on the pad portion 42p. The wiring portion 42 is continuous with the fourth terminal p4. A connection region 26 located between the wiring portion 42 and the fourth terminal p4 is separated in the Z direction from the fourth conductive region 24A and a fifth conductive region 24B1 described later.

[0133] A gate pad is provided on the top surface of the second semiconductor chip 402, and the potential of the gate pad is controlled via the third terminal p3B. A fifth conductive region 24B1 is provided continuous with the third terminal p3B. The fifth conductive region 24B1 and the sixth conductive region 24B2 are connected by, for example, a wire W. The sixth conductive region 24B2 is connected to the gate pad of the second semiconductor chip 402 by, for example, the wire W.

[0134] The source electrode of the second semiconductor chip 402 of the semiconductor chip 40 is connected to the second terminal p2 via the second conductive member 22. The end region p2A is continuous with the second terminal p2. The second conductive member 22 has a first region 22a connected to the source electrode of the second semiconductor chip 402, and a second region 22b having one end connected to the first region 22a and the other end connected to the end region p2A.

[0135] As described above, the number of semiconductor chips provided in the semiconductor chip 40 between the first terminal p1 and the second terminal p2 is not limited to one.

[0136] 15 shows an example in which the wire portion 42w of the wiring portion 42 and the second region 22b of the second conductive member 22 are formed of wire, but metal members other than wire may be used for the wire portion 42w and the second region 22b. For example, a plate-shaped metal member may be used. The configuration in which the first semiconductor chips 401 are arranged in six parts in FIG. 15 is merely an example, and it is sufficient that at least one first semiconductor chip 401 is provided. For example, when one first semiconductor chip 401 having a large area in the XY plane is provided, a plate-shaped metal member may be used instead of a wire.

[0137] In the example shown in FIG. 15, the path through which current mainly flows during operation of the semiconductor device 300 is as follows: 1: A current path that flows from the first terminal p1 to the fourth terminal p4 via the first conductive member 20, the first semiconductor chip 401, the wiring portion 42, and the connection region 26, or in the opposite direction; 2: A current path that flows from the fourth terminal p4 through the connection region 26, the wiring portion 42, the second semiconductor chip 402, and the second conductive member 22 to the second terminal p2, or in the opposite direction; There are two reasons for this:

[0138] The conductive plate 50 is preferably provided in a position facing at least a portion of the wiring portion 42 or the second conductive member 22 in the Z direction, with the first insulating portion 10 interposed therebetween. One end of the wire portion 42w of the wiring portion 42 and the second region 22b of the second conductive member 22 is provided on the upper surface of the first semiconductor chip 401 or the second semiconductor chip 402, respectively. In other words, the wiring portion 42 and the second conductive member 22 have portions that are located in the positive direction in the Z direction relative to the first conductive member 20, for example.

[0139] It is more desirable that the conductive plate 50 faces, in the Z direction, the wire portion 42w of the wiring portion 42 or at least a part of the second region 22b of the second conductive member 22, via the first insulating portion 10. It is even more desirable that at least a part of the conductive plate 50 faces, in the Z direction, the connection region 26, via the first insulating portion 10.

[0140] According to the semiconductor device 300 of this embodiment, for a semiconductor device having multiple semiconductor chips, the conductive plate 50 can suppress the generation of induced electromotive forces between multiple current paths, thereby improving the switching performance of the semiconductor device.

[0141] The conductive plate 50 is provided at a position facing in the Z direction to at least a portion of the wiring portion 42 or the second conductive member 22, with the first insulating portion 10 interposed therebetween. The wire portion 42w of the wiring portion 42 or the second region 22b of the second conductive member 22 is a current path that is farther away in the positive Z direction from the mounting substrate or the like on which the underside of the semiconductor device 300 is mounted in contact than the first conductive member 20 or the like. The conductive plate 50 provided on the upper surface of the semiconductor device 300 can mitigate changes over time in the magnetic field due to the current path at a position farther away from the mounting substrate or the like.

[0142] First, we will describe the case where the conductive plate 50 overlaps the second conductive member 22. The change over time in the magnetic field generated by the current flowing through the second conductive member 22 can be alleviated by the current induced in the conductive plate 50, which is located in the positive Z direction relative to the second conductive member 22.

[0143] 14, for example, when the third terminal p3A is turned off, a change in current may occur over time through the diode D2 of the second semiconductor chip 402 from the second terminal p2 to the fourth terminal p4. Or, when the third terminal p3B is turned on, a change in current may occur over time through the transistor Tr2 of the second semiconductor chip 402 from the fourth terminal p4 to the second terminal p2. Thus, when the third terminal p3A or p3B is switched, a change in current may occur over time through the second conductive member 22 connected to the second semiconductor chip 402. The conductive plate 50, located in the positive Z direction relative to the second conductive member 22, can suppress the change in magnetic field over time when switching by controlling the voltages at the third terminals p3A and p3B of the semiconductor device 300, thereby suppressing voltage oscillation.

[0144] On the other hand, when the conductive plate 50 overlaps with the wiring portion 42 in the Z direction, the change over time in the magnetic field generated by the current flowing through the wiring portion 42 can be alleviated by the current induced in the conductive plate 50 located in the positive Z direction relative to the wiring portion 42. Therefore, it is possible to suppress voltage oscillations during switching of the third terminals p3A and p3B of the semiconductor device 300.

[0145] Furthermore, the conductive plate 50 also serves as a path for heat flow, and even if the heat generating locations are uneven in the XY plane due to the arrangement of multiple semiconductor chips 40 in the semiconductor device 300, the heat is conducted to the conductive plate 50 via the first insulating part 10 and diffused in the conductive plate 50, thereby making it possible to make the amount of heat generated more uniform in the XY plane. By suppressing localized heat generation, the reliability of the semiconductor device 300 can be improved.

[0146] Furthermore, the conductive plate 50 is electrically and thermally connected to an external circuit via the columnar portions 52 and the end portions 54 connected to the conductive plate 50. This makes it possible to lay out wiring that connects external circuits via the conductive plate 50. In addition, by dissipating heat to the external circuit, heat accumulation in the conductive plate 50 is suppressed.

[0147] According to the semiconductor device of at least one of the first to third embodiments described above, when the semiconductor chip 40 includes at least one semiconductor chip, the conductive plate 50 reduces the influence of the magnetic field caused by the current flowing through the semiconductor device, thereby improving the switching performance of the semiconductor device. It is desirable for the second conductive member 22 connecting the semiconductor chip 40 and the second terminal p2 to at least partially overlap the conductive plate 50 in the Z direction, as this further improves the switching performance. Furthermore, the conductive plate 50 also serves as a path for heat flow, preventing localized overheating of the semiconductor device and improving its reliability.

[0148] The embodiments have been described above with reference to specific examples. However, the embodiments are not limited to these specific examples. In other words, designs that are appropriately modified by a person skilled in the art from these specific examples are also included within the scope of the embodiments as long as they have the characteristics of the embodiments. The elements, as well as their arrangement, materials, conditions, shapes, sizes, etc., of the above-mentioned specific examples are not limited to those exemplified and can be modified as appropriate.

[0149] Furthermore, the elements of each of the above-described embodiments can be combined to the extent technically possible, and combinations of these are also included within the scope of the embodiments as long as they include the features of the embodiments. In addition, within the scope of the concept of the embodiments, a person skilled in the art may conceive of various modifications and alterations, and it is understood that these modifications and alterations also fall within the scope of the embodiments.

[0150] Although several embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be embodied in various other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their modifications are included within the scope and spirit of the invention, and are also included in the scope of the invention and its equivalents as defined in the claims. [Explanation of symbols]

[0151] 100, 101, 102, 103, 200, 300... Semiconductor device 10, 12... Insulation section 10w, 12w...side 10g...Groove 20, 22, 24...Conductive members 20a, 22a, 24a...1st area 22b, 22b, 24b...Second area 26 Connection area p1, p2, p3, p4...terminals p2A...edge area 32, 34, 36...junction 40. Semiconductor chip 401, 402: Semiconductor chips 42...Wiring section 50 Conductive plate 52...Columnar part 54...End 60...Adhesive part 10p, 50p... Convex part 10c, 50c recess 50h...hole

Claims

1. a first terminal and a second terminal; a first conductive member connected to the first terminal; a semiconductor chip provided on the first conductive member; a first region facing the semiconductor chip in a first direction from the first conductive member toward the semiconductor chip; a second region located between the first region and the second terminal; a second conductive member having a first resin covering the semiconductor chip and provided on the second conductive member; a conductive plate provided on at least a portion of the first resin; a columnar portion connected to the conductive plate and extending in the first direction along a side surface of the first resin; A semiconductor device comprising:

2. a first terminal and a second terminal; a first conductive member connected to the first terminal; a semiconductor chip provided on the first conductive member; a first region facing the semiconductor chip in a first direction from the first conductive member toward the semiconductor chip; a second region located between the first region and the second terminal; a second conductive member having a first resin covering the semiconductor chip and provided on the second conductive member; a conductive plate provided on the first resin, at least a portion of which faces the second region in the first direction; A semiconductor device comprising:

3. a columnar portion connected to the conductive plate and extending in the first direction along a side surface of the first resin; The semiconductor device according to claim 2 .

4. The columnar portion further has an end portion that is continuous with the columnar portion and extends in a first plane that intersects with the first direction. The semiconductor device according to claim 1 or 3.

5. the conductive plate is longer than the second conductive member in a second direction intersecting the first direction and extending from the first terminal to the first conductive member; The semiconductor device according to claim 1 .

6. the conductive plate is longer than the second conductive member in a third direction intersecting the first direction and the second direction from the first terminal to the first conductive member; The semiconductor device according to claim 1 .

7. an adhesive portion is provided at least partially between the first resin and the conductive plate; the first resin includes an epoxy resin, and the adhesive portion includes a silicone adhesive; The semiconductor device according to claim 1 .

8. a convex portion protruding in the first direction is provided on an upper surface of the first resin; a recessed portion is provided on the lower surface of the conductive plate at a position corresponding to the protruding portion; The semiconductor device according to claim 1 .

9. a groove portion extending in the first direction is provided on the side surface of the first resin; At least a portion of the columnar portion is provided within the groove portion. The semiconductor device according to claim 1 or 3.

10. Further comprising a second resin provided on the conductive plate. The semiconductor device according to claim 1 .

11. a bonding portion provided between the semiconductor chip and the second conductive member, the second conductive member is a plate-shaped metal member; The semiconductor device according to claim 1 .

12. The semiconductor chip comprises: a first semiconductor chip provided on the first conductive member; a second semiconductor chip connected to the first semiconductor chip via a wiring portion and connected to the second conductive member; Including, the first region of the second conductive member faces the second semiconductor chip in the first direction; The semiconductor device according to claim 1 .

13. the first semiconductor chip and the second semiconductor chip each include a MOSFET; and a plurality of third terminals each connected to a gate electrode of the MOSFET; a fourth terminal connected to the wiring portion; The semiconductor device according to claim 12 , further comprising:

14. two or more of the first semiconductor chips and two or more of the second semiconductor chips are provided; the second region of the second conductive member includes a wire or a ribbon. The semiconductor device according to claim 13.

Images