Optical detection device and optical detection system

Abstract

To provide a photodetector having higher performance. [Solution] The photodetector device includes a semiconductor substrate, a first photoelectric conversion unit disposed on the semiconductor substrate for detecting light in a first wavelength range including the visible light range and performing photoelectric conversion, and a plurality of optical filters disposed on the side of the first photoelectric conversion unit opposite the semiconductor substrate for transmitting light of a predetermined color component within a predetermined wavelength range. The first photoelectric conversion unit includes a layered structure in which at least a first electrode, a first photoelectric conversion layer, and a second electrode are layered in this order, and a plurality of charge storage electrodes disposed spaced apart from the first electrode and facing the first photoelectric conversion layer via an insulating layer. A plurality of optical filters are disposed at positions corresponding to the plurality of charge storage electrodes.

Description

[Technical Field]

[0001] The present disclosure relates to a photodetector and a photodetection system including a photoelectric conversion unit that performs photoelectric conversion. [Background technology]

[0002] To date, solid-state imaging devices have been proposed that have a stacked structure of a first photoelectric conversion region that mainly receives visible light and performs photoelectric conversion, and a second photoelectric conversion region that mainly receives infrared light and performs photoelectric conversion (see, for example, Patent Document 1). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 2017-208496 Summary of the Invention

[0004] However, there is a demand for improved functionality in solid-state imaging devices.

[0005] Therefore, it is desirable to provide a photodetector device with enhanced functionality.

[0006] According to one embodiment of the present disclosure, a photodetector device includes a semiconductor substrate, a first photoelectric conversion unit disposed on the semiconductor substrate and configured to detect and photoelectrically convert light in a first wavelength range including the visible light range, and a plurality of optical filters disposed on the opposite side of the first photoelectric conversion unit from the semiconductor substrate and configured to transmit light of a predetermined color component included in a predetermined wavelength range. The first photoelectric conversion unit includes a stacked structure in which at least a first electrode, a first photoelectric conversion layer, and a second electrode are stacked in this order, and a plurality of charge storage electrodes disposed spaced apart from the first electrode and facing the first photoelectric conversion layer via an insulating layer. A plurality of optical filters are disposed at positions corresponding to the plurality of charge storage electrodes, respectively. [Brief explanation of the drawings]

[0007] [Figure 1] 1 is a schematic configuration diagram illustrating an example of a solid-state imaging device according to a first embodiment of the present disclosure. [Figure 2A] 2 is a cross-sectional view schematically illustrating an example of a schematic configuration of an imaging element applied to the pixel shown in FIG. 1. [Figure 2B] 2B is an enlarged schematic cross-sectional view of the through electrode and its periphery shown in FIG. 2A. FIG. [Figure 2C] 2B is an enlarged schematic plan view of the through electrode and its periphery shown in FIG. 2A. FIG. [Figure 2D] 2 is a cross-sectional view schematically illustrating an example of a schematic configuration of an image sensor as a modified example applied to the pixel shown in FIG. 1. [Figure 3] 2B is a circuit diagram illustrating an example of a readout circuit of the iTOF sensor unit shown in FIG. 2A. FIG. [Figure 4] FIG. 2B is a circuit diagram illustrating an example of a readout circuit of the organic photoelectric conversion unit shown in FIG. 2A. [Figure 5] 2 is a schematic diagram illustrating an example of an arrangement state of a plurality of pixels in the pixel section illustrated in FIG. 1. FIG. [Figure 6] FIG. 6 is a schematic diagram illustrating a modified example of the arrangement of the pixels shown in FIG. 5. [Figure 7] FIG. 10 is a schematic cross-sectional view illustrating an example of an imaging element according to a second embodiment of the present disclosure. [Figure 8] FIG. 8 is a schematic diagram illustrating an example of an arrangement of pixels shown in FIG. 7. [Figure 9] FIG. 8 is a schematic diagram illustrating a first modified example of the pixel arrangement state shown in FIG. 7. [Figure 10] FIG. 8 is a schematic diagram illustrating a second modified example of the pixel arrangement state shown in FIG. 7. [Figure 11] FIG. 8 is a schematic diagram illustrating a third modified example of the pixel arrangement state shown in FIG. [Figure 12] FIG. 10 is a schematic cross-sectional view illustrating an example of an imaging element according to a third embodiment of the present disclosure. [Figure 13] FIG. 13 is a schematic diagram illustrating an example of an arrangement state of pixels illustrated in FIG. [Figure 14]FIG. 10 is a schematic cross-sectional view illustrating an example of an imaging element according to a fourth embodiment of the present disclosure. [Figure 15] FIG. 15 is a schematic diagram illustrating an example of an arrangement state of pixels illustrated in FIG. [Figure 16] FIG. 15 is a schematic diagram illustrating a modification of the pixel arrangement shown in FIG. [Figure 17] FIG. 10 is a schematic cross-sectional view illustrating an example of an imaging element according to a fifth embodiment of the present disclosure. [Figure 18] FIG. 18 is a schematic diagram illustrating an example of an arrangement state of pixels illustrated in FIG. [Figure 19] FIG. 18 is a schematic diagram illustrating a first modified example of the pixel arrangement state shown in FIG. [Figure 20] FIG. 18 is a schematic diagram illustrating a second modified example of the pixel arrangement state shown in FIG. [Figure 21A] FIG. 18 is a first schematic diagram illustrating a third modified example of the pixel arrangement state shown in FIG. [Figure 21B] FIG. 18 is a second schematic diagram illustrating a third modified example of the pixel arrangement state shown in FIG. [Figure 22] FIG. 13 is a schematic cross-sectional view illustrating an example of an imaging element according to a sixth embodiment of the present disclosure. [Figure 23] FIG. 23 is a schematic diagram illustrating an example of an arrangement state of pixels shown in FIG. 22. [Figure 24] FIG. 23 is a schematic diagram illustrating a modification of the pixel arrangement shown in FIG. 22. [Figure 25] FIG. 13 is a schematic cross-sectional view illustrating an example of an imaging element according to a seventh embodiment of the present disclosure. [Figure 26] FIG. 13 is a schematic cross-sectional view illustrating an example of an imaging element according to an eighth embodiment of the present disclosure. [Figure 27A] 27 is a characteristic diagram showing the light transmittance distribution of a dual bandpass filter in the image sensor shown in FIG. 26. [Figure 27B] 27 is a characteristic diagram showing the light transmittance distribution of color filters in the image sensor shown in FIG. 26. [Figure 27C] 27 is a characteristic diagram showing the light transmittance distribution of an optical filter in the image sensor shown in FIG. 26. [Figure 27D]27A to 27C are characteristic diagrams showing the wavelength dependence of the sensitivity of the organic photoelectric conversion layer and the wavelength dependence of the sensitivity of the photoelectric conversion region in the image sensor shown in FIG. 26. [Figure 28A] FIG. 27 is a characteristic diagram showing the light transmittance distribution of a dual band-pass filter in the modified example of the image sensor shown in FIG. 26. [Figure 28B] FIG. 27 is a characteristic diagram showing the light transmittance distribution of color filters in the modified example of the image sensor shown in FIG. 26. [Figure 28C] FIG. 27 is a characteristic diagram showing the light transmittance distribution of an optical filter in a modified example of the image sensor shown in FIG. 26. [Figure 28D] 27A to 27C are characteristic diagrams showing the wavelength dependence of the sensitivity of the organic photoelectric conversion layer and the wavelength dependence of the sensitivity of the photoelectric conversion region in the modified example of the imaging element shown in FIG. 26. [Figure 29] FIG. 13 is a schematic cross-sectional view illustrating an example of an imaging element according to a ninth embodiment of the present disclosure. [Figure 30] FIG. 13 is a schematic cross-sectional view illustrating an example of an imaging element according to a ninth embodiment of the present disclosure. [Figure 31] FIG. 31 is a schematic diagram illustrating an example of an arrangement state of pixels shown in FIGS. 29 and 30. [Figure 32A] FIG. 32 is a first schematic diagram illustrating a modification of the pixel arrangement shown in FIG. 31. [Figure 32B] FIG. 32 is a second schematic diagram illustrating a modification of the pixel arrangement shown in FIG. [Figure 33A] FIG. 23 is an enlarged schematic cross-sectional view illustrating a through electrode and its periphery in an imaging element according to a tenth embodiment of the present disclosure. [Figure 33B] FIG. 23 is an enlarged schematic plan view illustrating a through electrode and its periphery in an imaging element according to a tenth embodiment of the present disclosure. [Figure 34A] FIG. 23 is an enlarged schematic cross-sectional view illustrating another example of the configuration of the through electrode and the surrounding details in the imaging element according to the tenth embodiment of the present disclosure. [Figure 34B] FIG. 23 is an enlarged schematic plan view illustrating another configuration example of the through electrode and its surrounding details in the imaging element according to the tenth embodiment of the present disclosure. [Figure 35] FIG. 23 is a cross-sectional view illustrating an example of a schematic configuration of an imaging element as a modified example according to the tenth embodiment of the present disclosure. [Figure 36A] FIG. 23 is a schematic diagram illustrating an example of the overall configuration of a light detection system according to an eleventh embodiment of the present disclosure. [Figure 36B] FIG. 36B is a schematic diagram illustrating an example of a circuit configuration of the photodetection system illustrated in FIG. 36A. [Figure 37] FIG. 1 is a schematic diagram illustrating an example of the overall configuration of an electronic device. [Figure 38] 1 is a block diagram showing an example of a schematic configuration of an in-vivo information acquisition system. [Figure 39] FIG. 1 is a diagram illustrating an example of a schematic configuration of an endoscopic surgery system. [Figure 40] FIG. 2 is a block diagram showing an example of the functional configuration of a camera head and a CCU. [Figure 41] 1 is a block diagram showing an example of a schematic configuration of a vehicle control system; [Figure 42] FIG. 2 is an explanatory diagram showing an example of the installation positions of an outside-vehicle information detection unit and an imaging unit. DETAILED DESCRIPTION OF THE INVENTION

[0008] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the drawings. The description will be made in the following order. 1. First embodiment An example of a solid-state imaging device equipped with an organic photoelectric conversion unit that obtains visible light image information and an iTOF sensor unit that receives infrared light and obtains distance information. 2. Second embodiment An example of a solid-state imaging device in which four on-chip lenses, four color filters, and four charge storage electrodes are provided for one photoelectric conversion unit. 3. Third Embodiment 10 is an example of a solid-state imaging device in which 16 on-chip lenses, 16 color filters, and 16 charge storage electrodes 25 are provided for one photoelectric conversion unit. 4. Fourth Embodiment An example of a solid-state imaging device in which four charge storage electrodes and four photoelectric conversion units are provided for one on-chip lens and one color filter. 5. Fifth Embodiment An example of a solid-state imaging device in which four charge storage electrodes are provided for one on-chip lens, one color filter, and one photoelectric conversion unit. 6. Sixth Embodiment This is an example of a solid-state imaging device in which four on-chip lenses, four color filters, and 16 charge storage electrodes are provided for one photoelectric conversion unit. 7. Seventh Embodiment 1 is an example of a solid-state imaging device equipped with an iTOF sensor unit having a charge storage unit. 8. Eighth Embodiment 10 shows an example of a solid-state imaging device further including a dual bandpass filter. 9. Ninth Embodiment 10 is an example of a solid-state imaging device further having an inner lens or an optical waveguide. 10. Tenth Embodiment 10 is an example of a solid-state imaging device having a metal layer that shields the periphery of a through electrode. 11. Eleventh Embodiment 1 is an example of a light detection system including a light emitting device and a light detecting device. 12. Application examples to electronic devices 13. Application example to in-body information acquisition system 14. Application example to endoscopic surgery system 15. Application examples for mobile devices 16. Other Modifications

[0009] <1. First embodiment> [Configuration of solid-state imaging device 1] (Overall configuration example) FIG. 1 illustrates an example of the overall configuration of a solid-state imaging device 1 according to an embodiment of the present disclosure. The solid-state imaging device 1 is, for example, a complementary metal oxide semiconductor (CMOS) image sensor. The solid-state imaging device 1 captures incident light (image light) from a subject via, for example, an optical lens system, converts the incident light imaged on an imaging surface into an electrical signal on a pixel-by-pixel basis, and outputs the electrical signal as a pixel signal. The solid-state imaging device 1 includes, for example, a pixel unit 100 as an imaging area on a semiconductor substrate 11, and a vertical drive circuit 111, a column signal processing circuit 112, a horizontal drive circuit 113, an output circuit 114, a control circuit 115, and an input / output terminal 116 arranged in a peripheral region of the pixel unit 100. The solid-state imaging device 1 is a specific example corresponding to a "photodetector" of the present disclosure.

[0010] The pixel unit 100 has, for example, a plurality of pixels P arranged two-dimensionally in a matrix. The pixel unit 100 has, for example, a plurality of pixel rows each composed of a plurality of pixels P arranged in a horizontal direction (the horizontal direction on the paper) and a plurality of pixel columns each composed of a plurality of pixels P arranged in a vertical direction (the vertical direction on the paper). The pixel unit 100 has, for example, one pixel drive line Lread (a row selection line and a reset control line) wired for each pixel row and one vertical signal line Lsig wired for each pixel column. The pixel drive line Lread transmits a drive signal for reading out a signal from each pixel P. Ends of the plurality of pixel drive lines Lread are connected to a plurality of output terminals of the vertical drive circuit 111 corresponding to each pixel row.

[0011] The vertical drive circuit 111 is configured with a shift register, an address decoder, etc., and is a pixel drive unit that drives each pixel P in the pixel unit 100, for example, in units of pixel rows. Signals output from each pixel P in a pixel row selected and scanned by the vertical drive circuit 111 are supplied to a column signal processing circuit 112 through each vertical signal line Lsig.

[0012] The column signal processing circuit 112 is composed of an amplifier, a horizontal selection switch, and the like, which are provided for each vertical signal line Lsig.

[0013] The horizontal drive circuit 113 is configured with a shift register, an address decoder, etc., and scans and sequentially drives each horizontal selection switch of the column signal processing circuit 112. By selective scanning by this horizontal drive circuit 113, signals of each pixel P transmitted through each of the multiple vertical signal lines Lsig are output in sequence to a horizontal signal line 121, and are transmitted to the outside of the semiconductor substrate 11 via the horizontal signal line 121.

[0014] The output circuit 114 processes and outputs signals sequentially supplied from each of the column signal processing circuits 112 via the horizontal signal line 121. The output circuit 114 may perform only buffering, or may perform black level adjustment, column variation correction, various digital signal processing, and the like, for example.

[0015] The circuit portion consisting of the vertical drive circuit 111, column signal processing circuit 112, horizontal drive circuit 113, horizontal signal line 121, and output circuit 114 may be formed directly on the semiconductor substrate 11, or may be disposed in an external control IC. Furthermore, these circuit portions may be formed on another substrate connected by a cable or the like.

[0016] The control circuit 115 receives a clock and data instructing an operation mode from outside the semiconductor substrate 11, and outputs data such as internal information of the pixels P, which are image pickup elements. The control circuit 115 further has a timing generator that generates various timing signals, and controls the driving of peripheral circuits such as the vertical drive circuit 111, column signal processing circuit 112, and horizontal drive circuit 113 based on the various timing signals generated by the timing generator.

[0017] The input / output terminal 116 is used to exchange signals with the outside.

[0018] (Example of cross-sectional structure of pixel P) FIG. 2A schematically illustrates an example of a cross-sectional configuration of one pixel P1 among a plurality of pixels P arranged in a matrix in the pixel section 100. As shown in FIG.

[0019] As shown in FIG. 2 , the pixel P1 is a so-called vertical-spectral imaging element having a structure in which, for example, one photoelectric conversion unit 10 and one organic photoelectric conversion unit 20 are stacked in the Z-axis direction, which is the thickness direction. The pixel P1, which is an imaging element, is a specific example corresponding to the “photoelectric conversion element” of the present disclosure. The pixel P1 further includes an intermediate layer 40 provided between the photoelectric conversion unit 10 and the organic photoelectric conversion unit 20 and a multilayer wiring layer 30 provided on the opposite side of the organic photoelectric conversion unit 20 from the photoelectric conversion unit 10. Furthermore, on the light incident side, opposite the photoelectric conversion unit 10 from the organic photoelectric conversion unit 20, for example, a sealing film 51, a color filter 52, a planarization film 53, and an on-chip lens 54 are stacked along the Z-axis direction in this order from a position closest to the organic photoelectric conversion unit 20. The sealing film 51 and the planarization film 53 may each be provided in common to multiple pixels P.

[0020] (Photoelectric conversion unit 10) The photoelectric conversion unit 10 is an indirect TOF (hereinafter referred to as iTOF) sensor that acquires a distance image (distance information) by, for example, optical time-of-flight (TOF). The photoelectric conversion unit 10 includes, for example, a semiconductor substrate 11, a photoelectric conversion region 12, a fixed charge layer 13, a pair of gate electrodes 14A and 14B, charge-voltage converters (FD) 15A and 15B that are floating diffusion regions, an inter-pixel region light-shielding wall 16, and a through electrode 17.

[0021] The semiconductor substrate 11 is, for example, an n-type silicon (Si) substrate including a front surface 11A and a back surface 11B, and has a p-well in a predetermined region. The front surface 11A faces the multilayer wiring layer 30. The back surface 11B faces the intermediate layer 40, and preferably has a fine uneven structure formed thereon. This is because it is effective in confining infrared light incident on the semiconductor substrate 11 inside the semiconductor substrate 11. Note that a similar fine uneven structure may also be formed on the front surface 11A.

[0022] The photoelectric conversion region 12 is a photoelectric conversion element configured by, for example, a PIN (Positive Intrinsic Negative) type photodiode (PD), and includes a pn junction formed in a predetermined region of the semiconductor substrate 11. The photoelectric conversion region 12 detects and receives light from the subject, particularly light having a wavelength in the infrared light region, and generates and accumulates electric charges according to the amount of received light through photoelectric conversion.

[0023] The fixed charge layer 13 is provided so as to cover the back surface 11B of the semiconductor substrate 11. The fixed charge layer 13 has, for example, negative fixed charges in order to suppress the generation of dark current due to the interface state of the back surface 11B, which is the light-receiving surface of the semiconductor substrate 11. A hole accumulation layer is formed in the vicinity of the back surface 11B of the semiconductor substrate 11 due to the electric field induced by the fixed charge layer 13. This hole accumulation layer suppresses the generation of electrons from the back surface 11B. The fixed charge layer 13 also includes a portion extending in the Z-axis direction between the inter-pixel region light-shielding wall 16 and the photoelectric conversion region 12. The fixed charge layer 13 is preferably formed using an insulating material. Specifically, the fixed charge layer 13 may be made of, for example, hafnium oxide (HfO x ), aluminum oxide (AlO x ), zirconium oxide (ZrO x ), tantalum oxide (TaO x ), titanium oxide (TiO x ), lanthanum oxide (LaO x ), praseodymium oxide (PrO x ), cerium oxide (CeO x ), neodymium oxide (NdO x ), promethium oxide (PmO x ), samarium oxide (SmO x ), europium oxide (EuO x ), gadolinium oxide (GdO x ), terbium oxide (TbO x ), dysprosium oxide (DyO x ), holmium oxide (HoO x ), thulium oxide (TmO x), ytterbium oxide (YbO x ), lutetium oxide (LuO x ), yttrium oxide (YO x ), hafnium nitride (HfN x ), aluminum nitride (AlN x ), hafnium oxynitride (HfO x N y ) and aluminum oxynitride (AlO x N y ) etc.

[0024] The pair of gate electrodes 14A and 14B constitute parts of transfer transistors (TG) 141A and 141B, respectively, and extend, for example, in the Z-axis direction from the surface 11A to the photoelectric conversion region 12. The TG141A and TG141B transfer charges accumulated in the photoelectric conversion region 12 to the pair of FD15A and 15B in response to drive signals applied to the gate electrodes 14A and 14B, respectively.

[0025] The pair of FDs 15A and 15B are floating diffusion regions that convert charges transferred from the photoelectric conversion region 12 via TGs 141A and 141B including gate electrodes 14A and 14B into electrical signals (e.g., voltage signals) and output the signals. As shown in FIG. 3, which will be described later, reset transistors (RST) 143A and 143B are connected to the FDs 15A and 15B, and vertical signal lines Lsig (FIG. 1) are also connected to the FDs 15A and 15B via amplifier transistors (AMP) 144A and 144B and select transistors (SEL) 145A and 145B.

[0026] FIG. 2B is an enlarged cross-sectional view taken along the Z axis of the inter-pixel region light-shielding wall 16 surrounding the through electrode 17, and FIG. 2C is an enlarged cross-sectional view taken along the XY plane of the inter-pixel region light-shielding wall 16 surrounding the through electrode 17. FIG. 2B shows a cross-section taken along line IIB-IIB in FIG. 2C as viewed from the arrow direction. The inter-pixel region light-shielding wall 16 is provided at the boundary between adjacent pixels P in the XY plane. The inter-pixel region light-shielding wall 16 includes, for example, a portion extending along the XZ plane and a portion extending along the YZ plane, and is provided to surround the photoelectric conversion region 12 of each pixel P. The inter-pixel region light-shielding wall 16 may also be provided to surround the through electrode 17. This can suppress oblique incidence of unnecessary light on the photoelectric conversion region 12 between adjacent pixels P, thereby preventing color mixing.

[0027] The inter-pixel region light-shielding wall 16 is made of a material containing at least one of a light-shielding elemental metal, a metal alloy, a metal nitride, and a metal silicide. More specifically, examples of the material for the inter-pixel region light-shielding wall 16 include aluminum (Al), copper (Cu), cobalt (Co), tungsten (W), titanium (Ti), tantalum (Ta), nickel (Ni), molybdenum (Mo), chromium (Cr), iridium (Ir), platinum-iridium, titanium nitride (TiN), and a tungsten-silicon compound. The material for the inter-pixel region light-shielding wall 16 is not limited to metal materials and may be graphite. The inter-pixel region light-shielding wall 16 is not limited to conductive materials and may be made of non-conductive materials with light-shielding properties, such as organic materials. An insulating layer Z1 made of an insulating material, such as silicon oxide (SiOx) or aluminum oxide, may be provided between the inter-pixel region light-shielding wall 16 and the through-electrode 17. Alternatively, a gap may be provided between the inter-pixel region light-shielding wall 16 and the through electrode 17 to insulate the inter-pixel region light-shielding wall 16 from the through electrode 17. If the inter-pixel region light-shielding wall 16 is made of a non-conductive material, the insulating layer Z1 may not be provided. Furthermore, an insulating layer Z2 may be provided outside the inter-pixel region light-shielding wall 16, i.e., between the inter-pixel region light-shielding wall 16 and the fixed charge layer 13. The insulating layer Z2 is made of an insulating material such as SiOx (silicon oxide) or aluminum oxide. Alternatively, a gap may be provided between the inter-pixel region light-shielding wall 16 and the fixed charge layer 13 to insulate the inter-pixel region light-shielding wall 16 from the fixed charge layer 13. If the inter-pixel region light-shielding wall 16 is made of a conductive material, the insulating layer Z2 ensures electrical insulation between the inter-pixel region light-shielding wall 16 and the semiconductor substrate 11. Furthermore, when the inter-pixel region light-shielding wall 16 is arranged to surround the through electrode 17 and is made of a conductive material, the insulating layer Z1 ensures electrical insulation between the inter-pixel region light-shielding wall 16 and the through electrode 17.

[0028] The through electrode 17 is, for example, a connecting member that electrically connects the readout electrode 26 of the organic photoelectric conversion unit 20 provided on the back surface 11B of the semiconductor substrate 11 to the FD 131 and AMP 133 (see FIG. 4 described later) provided on the front surface 11A of the semiconductor substrate 11. The through electrode 17 serves as, for example, a transmission path for transmitting signal charges generated in the organic photoelectric conversion unit 20 and transmitting a voltage for driving the charge storage electrode 25. The through electrode 17 can be provided so as to extend in the Z-axis direction from the readout electrode 26 of the organic photoelectric conversion unit 20 through the semiconductor substrate 11 to the multilayer wiring layer 30. The through electrode 17 enables the signal charges generated in the organic photoelectric conversion unit 20 provided on the back surface 11B of the semiconductor substrate 11 to be efficiently transferred to the front surface 11A of the semiconductor substrate 11. A fixed charge layer 13 and an insulating layer 41 are provided around the through electrode 17, thereby electrically insulating the through electrode 17 from the p-well region of the semiconductor substrate 11.

[0029] The through electrode 17 can be formed using, for example, silicon material doped with impurities such as PDAS (Phosphorus Doped Amorphous Silicon), as well as one or more metal materials such as aluminum (Al), tungsten (W), titanium (Ti), cobalt (Co), platinum (Pt), palladium (Pd), copper (Cu), hafnium (Hf), and tantalum (Ta).

[0030] (Multilayer wiring layer 30) The multi-layer wiring layer 30 includes a read circuit having, for example, TGs 141A and 141B, RSTs 143A and 143B, AMPs 144A and 144B, and SELs 145A and 145B.

[0031] (Middle class 40) The intermediate layer 40 may include, for example, an insulating layer 41, and an optical filter 42 and an inter-pixel region light-shielding film 43 embedded in the insulating layer 41. The insulating layer 41 may be a single layer film made of one inorganic insulating material such as silicon oxide (SiOx), silicon nitride (SiNx), or silicon oxynitride (SiON), or a laminate film made of two or more of these materials. Furthermore, the insulating layer 41 may be made of an organic insulating material such as polymethyl methacrylate (PMMA), polyvinylphenol (PVP), polyvinyl alcohol (PVA), polyimide, polycarbonate (PC), polyethylene terephthalate (PET), polystyrene, N-2(aminoethyl)3-aminopropyltrimethoxysilane (AEAPTMS), 3-mercaptopropyltrimethoxysilane (MPTMS), tetraethoxysilane (TEOS), or octadecyltrichlorosilane (OTS).

[0032] The optical filter 42 has a transmission band in the infrared light region (for example, wavelengths of 880 nm or more and 1040 nm or less) where photoelectric conversion takes place in the photoelectric conversion region 12. That is, the optical filter 42 transmits light having wavelengths in the infrared light region more easily than light having wavelengths in the visible light region (for example, wavelengths of 400 nm or more and 700 nm or less). Specifically, the optical filter 42 can be made of, for example, an organic material, and is configured to selectively transmit light in the infrared light region while absorbing at least a portion of light having wavelengths in the visible light region.

[0033] The inter-pixel region light-shielding film 43 is provided at the boundary between adjacent pixels P in the XY plane. The inter-pixel region light-shielding film 43 includes a portion that extends along the XY plane and is provided so as to surround the photoelectric conversion region 12 of each pixel P. Similar to the inter-pixel region light-shielding wall 16, the inter-pixel region light-shielding film 43 suppresses oblique incidence of unnecessary light into the photoelectric conversion region 12 between adjacent pixels P and prevents color mixing. Note that the inter-pixel region light-shielding film 43 may be provided as needed, and therefore the pixel P1 does not need to have the inter-pixel region light-shielding film 43.

[0034] (Organic photoelectric conversion unit 20) The organic photoelectric conversion unit 20 includes, for example, a readout electrode 26, a semiconductor layer 21, an organic photoelectric conversion layer 22, and an upper electrode 23, which are stacked in this order from the position closest to the photoelectric conversion unit 10. The organic photoelectric conversion unit 20 further includes an insulating layer 24 provided below the semiconductor layer 21 and a charge storage electrode 25 provided to face the semiconductor layer 21 via the insulating layer 24. The charge storage electrode 25 and the readout electrode 26 are spaced apart from each other and are provided, for example, in the same layer. The readout electrode 26 is in contact with the upper end of the through-electrode 17. The upper electrode 23, the organic photoelectric conversion layer 22, and the semiconductor layer 21 may each be provided in common to some of the pixels P ( FIG. 2A ) in the pixel unit 100, or may be provided in common to all of the pixels P in the pixel unit 100. This also applies to other embodiments and modifications described below.

[0035] It should be noted that other organic layers may be provided between the organic photoelectric conversion layer 22 and the semiconductor layer 21 and between the organic photoelectric conversion layer 22 and the upper electrode 23 .

[0036] The readout electrode 26, the upper electrode 23, and the charge storage electrode 25 are made of a light-transmitting conductive film, such as indium tin oxide (ITO). However, the constituent materials of the readout electrode 26, the upper electrode 23, and the charge storage electrode 25 may be, in addition to ITO, tin oxide (SnOx)-based materials with dopants or zinc oxide-based materials obtained by adding dopants to zinc oxide (ZnO). Examples of zinc oxide-based materials include aluminum zinc oxide (AZO) with aluminum (Al) as a dopant, gallium zinc oxide (GZO) with gallium (Ga), and indium zinc oxide (IZO) with indium (In). The constituent materials of the readout electrode 26, the upper electrode 23, and the charge storage electrode 25 may also be CuI, InSbO4, ZnMgO, CuInO2, MgIN2O4, CdO, ZnSnO3, TiO2, or the like. Furthermore, a spinel oxide or an oxide having a YbFe2O4 structure may also be used.

[0037] The organic photoelectric conversion layer 22 converts light energy into electrical energy and is formed, for example, by including two or more organic materials that function as p-type and n-type semiconductors. The p-type semiconductor functions relatively as an electron donor (donor), and the n-type semiconductor functions relatively as an electron acceptor (acceptor). The organic photoelectric conversion layer 22 has a bulk heterojunction structure within the layer. The bulk heterojunction structure is a p / n junction interface formed by mixing a p-type semiconductor and an n-type semiconductor, and excitons generated upon light absorption are separated into electrons and holes at this p / n junction interface.

[0038] In addition to the p-type and n-type semiconductors, the organic photoelectric conversion layer 22 may further include three types of so-called dye materials that photoelectrically convert light in a specific wavelength band while transmitting light in other wavelength bands. The p-type semiconductor, n-type semiconductor, and dye material preferably have different maximum absorption wavelengths. This allows for absorption of light in a wide range of wavelengths in the visible light region.

[0039] The organic photoelectric conversion layer 22 can be formed by, for example, mixing the various organic semiconductor materials described above and using a spin coating technique. Alternatively, the organic photoelectric conversion layer 22 may be formed by, for example, a vacuum deposition method or a printing technique.

[0040] The material constituting the semiconductor layer 21 preferably has a large band gap value (for example, a band gap value of 3.0 eV or more) and a higher mobility than the material constituting the organic photoelectric conversion layer 22. Specific examples of such materials include oxide semiconductor materials such as IGZO; transition metal dichalcogenides; silicon carbide; diamond; graphene; carbon nanotubes; and organic semiconductor materials such as condensed polycyclic hydrocarbon compounds and condensed heterocyclic compounds.

[0041] The charge storage electrode 25, together with the insulating layer 24 and the semiconductor layer 21, forms a kind of capacitor, and accumulates charges generated in the organic photoelectric conversion layer 22 in a part of the semiconductor layer 21, for example, a region of the semiconductor layer 21 corresponding to the charge storage electrode 25 via the insulating layer 24. In this embodiment, one charge storage electrode 25 is provided corresponding to each of one photoelectric conversion region 12, one color filter 52, and one on-chip lens 54. The charge storage electrode 25 is connected to, for example, the vertical drive circuit 111.

[0042] The insulating layer 24 can be formed of, for example, the same inorganic insulating material and organic insulating material as the insulating layer 41 .

[0043] As described above, the organic photoelectric conversion section 20 detects some or all of the wavelengths in the visible light range. In addition, it is desirable that the organic photoelectric conversion section 20 does not have sensitivity to the infrared light range.

[0044] In the organic photoelectric conversion unit 20, light incident from the upper electrode 23 side is absorbed by the organic photoelectric conversion layer 22. The resulting excitons (electron-hole pairs) migrate to the interface between the electron donor and electron acceptor constituting the organic photoelectric conversion layer 22, where they undergo exciton dissociation, i.e., dissociation into electrons and holes. The generated charges, i.e., electrons and holes, migrate to the upper electrode 23 or the semiconductor layer 21 due to diffusion caused by a difference in carrier concentration or an internal electric field caused by a potential difference between the upper electrode 23 and the charge storage electrode 25, and are detected as photocurrent. For example, the readout electrode 26 is set to a positive potential and the upper electrode 23 is set to a negative potential. In this case, holes generated by photoelectric conversion in the organic photoelectric conversion layer 22 migrate to the upper electrode 23. Electrons generated by photoelectric conversion in the organic photoelectric conversion layer 22 are attracted to the charge storage electrode 25 and accumulated in a portion of the semiconductor layer 21, for example, a region of the semiconductor layer 21 corresponding to the charge storage electrode 25 via the insulating layer 24.

[0045] The charges (e.g., electrons) accumulated in the region of the semiconductor layer 21 corresponding to the charge storage electrode 25 via the insulating layer 24 are read out as follows. Specifically, a potential V26 is applied to the readout electrode 26, and a potential V25 is applied to the charge storage electrode 25. Here, the potential V26 is made higher than the potential V25 (V25 < V26). By doing so, the electrons accumulated in the region of the semiconductor layer 21 corresponding to the charge storage electrode 25 are transferred to the readout electrode 26.

[0046] By providing the semiconductor layer 21 under the organic optoelectronic conversion layer 22 in this way and accumulating charges (e.g., electrons) in the region of the semiconductor layer 21 corresponding to the charge storage electrode 25 via the insulating layer 24, the following effects can be obtained. That is, compared with the case of accumulating charges (e.g., electrons) in the organic optoelectronic conversion layer 22 without providing the semiconductor layer 21, recombination of holes and electrons during charge accumulation is prevented, the transfer efficiency of the accumulated charges (e.g., electrons) to the readout electrode 26 can be increased, and generation of dark current can be suppressed. In the above description, the case of reading out electrons is exemplified, but holes may be read out. When reading out holes, the potentials in the above description are described as the potentials felt by the holes.

[0047] (Readout Circuit of the Photoelectric Conversion Unit 10) FIG. 3 is a circuit diagram showing an example of the readout circuit of the photoelectric conversion unit 10 constituting the pixel P shown in FIG. 2A.

[0048] The readout circuit of the photoelectric conversion unit 10 has, for example, TG141A, 141B, OFG146, FD15A, 15B, RST143A, 143B, AMP144A, 144B, and SEL145A, 145B.

[0049] The TG141A and 141B are connected between the photoelectric conversion region 12 and the FD15A and 15B. When a drive signal is applied to the gate electrodes 14A and 14B of the TG141A and 141B and the TG141A and 141B are activated, the transfer gates of the TG141A and 141B are turned on. As a result, the signal charges converted in the photoelectric conversion region 12 are transferred to the FD15A and 15B via the TG141A and 141B.

[0050] The OFG 146 is connected between the photoelectric conversion region 12 and a power supply. When a drive signal is applied to the gate electrode of the OFG 146 and the OFG 146 enters an active state, the OFG 146 enters a conductive state. As a result, the signal charge converted in the photoelectric conversion region 12 is discharged to the power supply via the OFG 146.

[0051] The FDs 15A and 15B are connected between the TGs 141A and 141B and the AMPs 144A and 144B. The FDs 15A and 15B convert the signal charges transferred by the TGs 141A and 141B into voltage signals and output them to the AMPs 144A and 144B.

[0052] RST143A and 143B are connected between FD15A and FD15B and the power supply. When a drive signal is applied to the gate electrodes of RST143A and RST143B and RST143A and 143B enter an active state, the reset gates of RST143A and RST143B enter a conductive state. As a result, the potential of FD15A and FD15B is reset to the power supply level.

[0053] The AMPs 144A and 144B have gate electrodes connected to the FDs 15A and 15B, respectively, and drain electrodes connected to a power supply. The AMPs 144A and 144B serve as inputs to a readout circuit for the voltage signals held by the FDs 15A and 15B, that is, a so-called source follower circuit. That is, the source electrodes of the AMPs 144A and 144B are connected to the vertical signal line Lsig via the SELs 145A and 145B, respectively, thereby constituting a source follower circuit together with a constant current source connected to one end of the vertical signal line Lsig.

[0054] SEL145A and 145B are connected between the source electrodes of AMP144A and 144B and the vertical signal line Lsig, respectively. When a drive signal is applied to each gate electrode of SEL145A and 145B and SEL145A and 145B enter an active state, SEL145A and 145B enter a conductive state and the pixel P enters a selected state. As a result, the readout signals (pixel signals) output from AMP144A and 144B are output to the vertical signal line Lsig via SEL145A and 145B.

[0055] In the solid-state imaging device 1, an infrared light pulse is irradiated onto an object, and the light pulse reflected from the object is received by the photoelectric conversion region 12 of the photoelectric conversion unit 10. In the photoelectric conversion region 12, a plurality of electric charges are generated by the incidence of the infrared light pulse. The plurality of electric charges generated in the photoelectric conversion region 12 are alternately distributed to FD15A and FD15B by supplying drive signals alternately to a pair of gate electrodes 14A and 14B for equal periods of time. By changing the shutter phase of the drive signals applied to the gate electrodes 14A and 14B relative to the irradiated light pulse, the amount of electric charge accumulated in FD15A and the amount of electric charge accumulated in FD15B become phase-modulated values. By demodulating these values, the round-trip time of the light pulse can be estimated, and thus the distance between the solid-state imaging device 1 and the object can be determined.

[0056] (Readout circuit of organic photoelectric conversion unit 20) FIG. 4 is a circuit diagram showing an example of a readout circuit for the organic photoelectric conversion unit 20 constituting the pixel P1 shown in FIG. 2A.

[0057] The readout circuit of the organic photoelectric conversion unit 20 includes, for example, an FD131, an RST132, an AMP133, and a SEL134.

[0058] The FD 131 is connected between the readout electrode 26 and the AMP 133. The FD 131 converts the signal charges transferred by the readout electrode 26 into a voltage signal and outputs the voltage signal to the AMP 133.

[0059] RST132 is connected between FD131 and the power supply. When a drive signal is applied to the gate electrode of RST132 and RST132 enters an active state, the reset gate of RST132 enters a conductive state. As a result, the potential of FD131 is reset to the power supply level.

[0060] The AMP 133 has a gate electrode connected to the FD 131 and a drain electrode connected to a power supply, and a source electrode of the AMP 133 is connected to the vertical signal line Lsig via the SEL 134.

[0061] SEL134 is connected between the source electrode of AMP133 and the vertical signal line Lsig. When a drive signal is applied to the gate electrode of SEL134 and SEL134 enters an active state, SEL134 enters a conductive state and pixel P1 enters a selected state. As a result, a readout signal (pixel signal) output from AMP133 is output to the vertical signal line Lsig via SEL134.

[0062] (Example of the planar configuration of pixel P1) FIG. 5 schematically illustrates an example of an arrangement of a plurality of pixels P1 in the pixel unit 100. (A) to (D) of FIG. 5 respectively illustrate the arrangement at height positions corresponding to levels Lv1 to Lv3 and Lv5 in the Z-axis direction shown in FIG. 2A. Specifically, (A) of FIG. 5 illustrates the arrangement of the on-chip lenses 54 in the XY plane, (B) of FIG. 5 illustrates the arrangement of the color filters 52 in the XY plane, (C) of FIG. 5 illustrates the arrangement of the charge storage electrodes 25 and the readout electrodes 26 in the XY plane, and (D) of FIG. 5 illustrates the arrangement of the photoelectric conversion regions 12 and the through-electrodes 17 in the XY plane. (D) of FIG. 5 also illustrates the planar shape of the inter-pixel region light-shielding film 43 at a height position corresponding to level Lv4, indicated by a dashed line. 5A to 5D, in the pixel unit 100, one on-chip lens 54, one color filter 52, one charge storage electrode 25, and one photoelectric conversion region 12 are provided at positions corresponding to one another in the Z-axis direction. The corresponding positions here refer to, for example, positions overlapping one another in the Z-axis direction. Alternatively, the present invention is not limited thereto. It is sufficient that light incident on one on-chip lens 54 sequentially enters one color filter 52, an organic photoelectric conversion unit 20 provided in common to a plurality of pixels P1, and one photoelectric conversion region 12, and charges generated by photoelectric conversion in the organic photoelectric conversion unit 20 are attracted to one charge storage electrode 25 and stored in a part of the semiconductor layer 21, i.e., a region corresponding to the charge storage electrode 25, via the insulating layer 24. Furthermore, when one on-chip lens 54, one color filter 52, one charge storage electrode 25, and one photoelectric conversion region 12 are positioned to overlap one another in the Z-axis direction, their respective central positions may or may not coincide with one another. Note that, although Fig. 5 shows an example of a planar configuration of a total of 16 pixels P1, four of which are arranged in each of the X-axis and Y-axis directions, in the pixel unit 100, for example, these 16 pixels P1 are arranged in multiples in both the X-axis and Y-axis directions.

[0063] In the example of FIG. 5, as shown in (B), one red pixel PR1 having a red color filter 52R and receiving red light, one blue pixel PB1 having a blue color filter 52B and receiving blue light, and two green pixels PG1 having green color filters 52G and receiving green light constitute one pixel group PP1. The arrangement of the multiple pixels P shown in (B) of FIG. 5 is known as a Bayer arrangement. The red pixels PR1 are arranged every other pixel in the X-axis direction and the Y-axis direction. The blue pixels PB1 are arranged every other pixel in the X-axis direction and the Y-axis direction and are positioned diagonally relative to the red pixels PR1. The green pixels PG1 are arranged to fill the gaps between the red pixels PR1 and the blue pixels PB1. Note that FIG. 5 is merely an example, and the arrangement of the multiple pixels P1 in the pixel unit 100 of the present disclosure is not limited to this example.

[0064] As shown in FIG. 5C, one readout electrode 26 is provided for each pixel group PP1. Specifically, one readout electrode 26 is disposed in a gap near the center of the four charge storage electrodes 25 in one pixel group PP1. Note that FIG. 5 is an example, and the arrangement position of the readout electrode 26 in the pixel unit 100 of the present disclosure is not limited to this. In the example of FIG. 5, the readout electrode 26 is provided in the center of the four pixels P that make up one pixel group PP1, so the distance between each charge storage electrode 25 and the readout electrode 26 of the four pixels P is approximately equal. This makes it suitable for adjacent pixels P to share the readout electrode 26.

[0065] As shown in FIG. 5D, one through electrode 17 is provided for each pixel P. Specifically, one through electrode 17 is disposed in a gap near the four corners of the photoelectric conversion region 12 in each pixel P. By disposing the through electrodes 17 near the corners of the photoelectric conversion region 12 in this manner, the area of ​​the photoelectric conversion region 12 can be increased. Note that FIG. 5 is an example, and the arrangement positions of the through electrodes 17 in the pixel unit 100 of the present disclosure are not limited thereto. For example, as shown in FIG. 6, a through electrode 17 may be further disposed near the boundary between adjacent photoelectric conversion regions 12 and at a position midway between the four corners of the photoelectric conversion region 12. FIG. 6 schematically illustrates a modified arrangement of multiple pixels P1 in the pixel unit 100 shown in FIG. 1. As shown in FIGS. 5D and 6D, the through electrodes 17 and the readout electrodes 26 are preferably disposed at positions that do not overlap with the center of the on-chip lens 54 in the Z-axis direction. This is because it is possible to increase the amount of infrared light that can be incident on the photoelectric conversion region 12, which is advantageous for improving the infrared light detection sensitivity of each pixel P1. Note that the present disclosure is not limited to the embodiments shown in FIGS. 5 and 6. For example, the through electrodes 17 may not be arranged at the four corners of the photoelectric conversion region 12, but may be arranged only at intermediate positions between the four corners of the photoelectric conversion region 12. Furthermore, by arranging the multiple through electrodes 17 as symmetrically as possible in a plane perpendicular to the Z axis for the photoelectric conversion region 12 in each pixel P, the optical characteristics of the photoelectric conversion region 12 are improved. That is, for example, when obliquely incident light is received, the uniformity of the photoelectric conversion characteristics in the photoelectric conversion region 12 in a plane perpendicular to the Z axis is improved.

[0066] As shown in FIGS. 5D and 6D, the inter-pixel region light-shielding film 43 is provided in the boundary between adjacent pixels P1 in the XY plane so as to form a grid pattern as a whole. The inter-pixel region light-shielding film 43 is provided to surround the photoelectric conversion region 12 of each pixel P1 and includes multiple apertures 43K. As described above, the inter-pixel region light-shielding film 43 suppresses oblique incidence of unnecessary light into the photoelectric conversion region 12 between adjacent pixels P1, thereby preventing color mixing. Here, the center position of each aperture 43K in the inter-pixel region light-shielding film 43 may be shifted from the center position of each pixel P1. This is to reduce variations in the detection characteristics of the multiple pixels P1 arranged in the pixel unit 100, for example, to avoid a decrease in the detection sensitivity of pixels P1 arranged in the periphery of the pixel unit 100. In this case, the shift amount of the center position of each aperture portion 43K relative to the center position of each pixel P1 may be increased as the distance from the center of the pixel unit 100 approaches the periphery of the pixel unit 100. In particular, the shift amount may be changed nonlinearly as the distance from the center of the pixel unit 100 approaches the periphery of the pixel unit 100. By doing so, it is possible to further improve the shading characteristics at the edge of the pixel unit 100.

[0067] Furthermore, the interval between adjacent pixels P1 may be increased from the center of the pixel unit 100 toward the periphery of the pixel unit 100. In particular, it is preferable that the interval change nonlinearly from the center of the pixel unit 100 toward the periphery of the pixel unit 100. By doing so, it is possible to perform pupil correction according to the image height of each of the multiple pixels P1 arranged in the pixel unit 100, for example.

[0068] [Functions and Effects of Solid-State Imaging Device 1] The solid-state imaging device 1 of this embodiment includes, stacked in order from the incident side, an organic photoelectric conversion unit 20 that detects light having wavelengths in the visible light range and performs photoelectric conversion, an optical filter 42 having a transmission band in the infrared light range, and a photoelectric conversion unit 10 that detects light having wavelengths in the infrared light range and performs photoelectric conversion. Therefore, a visible light image composed of red light signals, green light signals, and blue light signals obtained from the red pixel PR, green pixel PG, and blue pixel PB, respectively, and an infrared light image using infrared light signals obtained from all of the multiple pixels P can be simultaneously acquired at the same position in the XY plane. This allows for high integration in the XY plane.

[0069] Furthermore, since the photoelectric conversion unit 10 has a pair of gate electrodes 14A, 14B and FDs 15A, 15B, it is possible to acquire an infrared light image as a distance image containing information about the distance to the subject. Therefore, the solid-state imaging device 1 of this embodiment can acquire both a high-resolution visible light image and an infrared light image containing depth information.

[0070] In this embodiment, the organic photoelectric conversion unit 20 includes a structure in which a readout electrode 26, a semiconductor layer 21, an organic photoelectric conversion layer 22, and an upper electrode 23 are stacked in this order. The structure also includes an insulating layer 24 provided below the semiconductor layer 21 and a charge storage electrode 25 provided facing the semiconductor layer 21 via the insulating layer 24. Therefore, charges generated by photoelectric conversion in the organic photoelectric conversion layer 22 can be stored in a portion of the semiconductor layer 21, for example, a region of the semiconductor layer 21 corresponding to the charge storage electrode 25 via the insulating layer 24. This allows for the removal of charges in the semiconductor layer 21, i.e., complete depletion of the semiconductor layer 21, for example, at the start of exposure. This reduces kTC noise, thereby suppressing degradation of image quality due to random noise. Furthermore, compared to when charges (e.g., electrons) are stored in the organic photoelectric conversion layer 22 without the semiconductor layer 21, recombination of holes and electrons during charge storage is prevented, increasing the transfer efficiency of the stored charges (e.g., electrons) to the readout electrode 26 and suppressing the generation of dark current.

[0071] In the present disclosure, the semiconductor layer 21 may not be provided, as shown in pixel P1A in FIG. 2D . In pixel P1A in FIG. 2D , the organic photoelectric conversion layer 22 is connected to the readout electrode 26, and the charge storage electrode 25 is provided facing the organic photoelectric conversion layer 22 via the insulating layer 24. In this configuration, charges generated by photoelectric conversion in the organic photoelectric conversion layer 22 are accumulated in the organic photoelectric conversion layer 22. Even in this case, a type of capacitor is formed by the organic photoelectric conversion layer 22, the insulating layer 24, and the charge storage electrode 25 during photoelectric conversion in the organic photoelectric conversion layer 22. Therefore, for example, at the start of exposure, charges in the organic photoelectric conversion layer 22 can be removed, i.e., the organic photoelectric conversion layer 22 can be completely depleted. As a result, kTC noise can be reduced, thereby suppressing degradation of image quality due to random noise.

[0072] In the present embodiment, one on-chip lens 54, one color filter 52, one charge storage electrode 25, and one photoelectric conversion region 12 are provided in the pixel unit 100 at positions corresponding to one another in the Z-axis direction. Therefore, infrared light signals can be obtained at positions corresponding to the red pixel PR1, the green pixel PG1, and the blue pixel PB1. Therefore, the pixel P1 of the present embodiment can obtain an infrared light image with higher resolution than the pixel P2 of the second embodiment and the pixel P3 of the third embodiment, which will be described later.

[0073] In this embodiment, red, green, and blue color filters 52R, 52G, and 52B are provided, respectively, and red light, green light, and blue light are received to obtain a color visible light image, but a black and white visible light image may also be obtained without providing color filters 52.

[0074] Furthermore, in this embodiment, the through electrode 17 and the read electrode 26 are provided at positions that do not overlap with the vicinity of the center of the on-chip lens 54 in the Z-axis direction, thereby improving the infrared light detection sensitivity of each pixel P1.

[0075] <2. Second embodiment> [Configuration of pixel P2] FIG. 7 schematically illustrates an example of a cross-sectional configuration of a pixel P2 as an image sensor according to the second embodiment. FIG. 8 schematically illustrates an example of an arrangement of multiple pixels P2 in the XY plane. Like the pixel P1 as an image sensor according to the first embodiment, the pixel P2 can be used as the pixel P constituting the pixel unit 100 in the solid-state imaging device 1 shown in FIG. 1. However, in this embodiment, as shown in FIG. 8, four pixels P2 constitute one pixel group PP2 and share one photoelectric conversion unit 10. Therefore, when the pixel P2 according to this embodiment is used as the pixel P shown in FIG. 1, for example, the organic photoelectric conversion unit 20 including one charge storage electrode 25 may be driven for each pixel P2, and one photoelectric conversion unit 10 may be driven for each pixel group PP2. Note that while FIG. 7 illustrates two through electrodes 17 and two readout electrodes 26 in contact with the upper ends of the through electrodes 17, one on each side, the readout electrode 26 on the right side appears to be separated from the semiconductor layer 21. However, in reality, the read electrode 26 on the right side is also connected to the semiconductor layer 21 in a cross section different from that shown in FIG.

[0076] 8A to 8D show the arrangement at height positions corresponding to levels Lv1 to Lv3 and Lv5 in the Z-axis direction shown in FIG. 7, respectively. That is, FIG. 8A shows the arrangement of the on-chip lenses 54 in the XY plane, FIG. 8B shows the arrangement of the color filters 52 in the XY plane, FIG. 8C shows the arrangement of the charge storage electrodes 25 in the XY plane, and FIG. 8D shows the arrangement of the photoelectric conversion regions 12, the through electrodes 17, and the readout electrodes 26 in the XY plane. Note that in FIG. 8D, the readout electrodes 26 are shown in (D) to ensure visibility. Also, in FIG. 8B, the symbol PR2 represents the red pixel P2, the symbol PG2 represents the green pixel P2, and the symbol PB2 represents the blue pixel P2. The color arrangement of the color filters 52 is not particularly limited, and may be, for example, a Bayer arrangement.

[0077] In the first embodiment, one on-chip lens 54, one color filter 52, one charge storage electrode 25, and one photoelectric conversion region 12 are provided in positions corresponding to one another in the Z-axis direction in the pixel unit 100. In contrast, in the present embodiment, four on-chip lenses 54, four color filters 52, and four charge storage electrodes 25 are provided in positions corresponding to one another in the Z-axis direction for one photoelectric conversion region 12. More specifically, for one photoelectric conversion region 12, the on-chip lenses 54, the color filters 52, and the charge storage electrodes 25 are arranged in two columns in the X-axis direction and two rows in the Y-axis direction. That is, in the present embodiment, as shown in FIGS. 7 and 8 , each pixel P2 has one on-chip lens 54, one color filter 52, and one charge storage electrode 25, and four pixels P2 adjacent to one another in both the X-axis direction and the Y-axis direction constitute one pixel group PP2, and the four pixels P2 share one photoelectric conversion unit 10. Except for this point, the configuration of pixel P2 is substantially the same as the configuration of pixel P1. Note that (D) of Fig. 8 shows an example in which the through electrodes 17 and the readout electrodes 26 are arranged near the boundaries between adjacent photoelectric conversion regions 12, at the four corners of the photoelectric conversion region 12.

[0078] [Action and effect of pixel P2] The pixel P2 of the present embodiment, having the above-described configuration, can simultaneously acquire a visible light image and an infrared light image containing distance information at the same position in the in-plane direction. Furthermore, the pixel P2 can reduce the difference in infrared light detection sensitivity among the multiple pixels P2 constituting the pixel unit 100 compared to when the pixel unit 100 is composed of multiple pixels P1. When the pixel unit 100 is composed of multiple pixels P1, the transmittance of infrared light passing through the color filters 52 varies depending on the color of the color filters 52. As a result, the intensity of infrared light reaching the photoelectric conversion region 12 differs between the red pixel PR1, the blue pixel PB1, and the green pixel PG1. This results in a difference in infrared light detection sensitivity among the multiple pixels P1 constituting one pixel group PP1. In contrast, the pixel P2 of the present embodiment allows infrared light passing through one color filter 52R, one color filter 52B, and two color filters 52G to enter each photoelectric conversion region 12. Therefore, it is possible to reduce the difference in infrared light detection sensitivity that occurs between the plurality of pixel groups PP2.

[0079] Furthermore, in this embodiment, the through electrodes 17 and the read electrodes 26 are provided at positions that do not overlap with the vicinity of the center of each on-chip lens 54 in the Z-axis direction, thereby improving the infrared light detection sensitivity of each pixel P2.

[0080] Furthermore, even when a plurality of pixels P2 according to the present embodiment are arranged, the center position of each opening 43K in the inter-pixel region light-shielding film 43 may be shifted from the center position of each pixel P2. This is to reduce variations in the detection characteristics of the plurality of pixels P2 arranged in the pixel unit 100, for example, to avoid a decrease in the detection sensitivity of the pixels P2 arranged in the peripheral part of the pixel unit 100. In this case, the amount of shift of the center position of each opening 43K from the center position of each pixel P2 may be increased as the distance from the center of the pixel unit 100 approaches the peripheral part of the pixel unit 100. In particular, it is preferable that the amount of shift change nonlinearly as the distance from the center of the pixel unit 100 approaches the peripheral part of the pixel unit 100.

[0081] Furthermore, the interval between adjacent pixels P2 may be increased from the center of the pixel unit 100 toward the periphery of the pixel unit 100. In particular, it is preferable that the interval change nonlinearly from the center of the pixel unit 100 toward the periphery of the pixel unit 100. By doing so, it is possible to perform pupil correction according to the image height of each of the multiple pixels P2 arranged in the pixel unit 100, for example.

[0082] 8 is an example, and the arrangement positions of the through electrodes 17 and the readout electrodes 26 in the plurality of pixels P2 arranged in the pixel unit 100 of the present disclosure are not limited thereto. For example, as shown in FIG. 9, the through electrodes 17 may be arranged near the boundary between adjacent photoelectric conversion regions 12, at intermediate positions between the four corners of the photoelectric conversion region 12. FIG. 9 schematically illustrates a first modified example of the arrangement state of the plurality of pixels P2 in the pixel unit 100. Alternatively, as shown in FIG. 10, the through electrodes 17 may be arranged near the boundary between adjacent photoelectric conversion regions 12, at both the four corners of the photoelectric conversion region 12 and at intermediate positions between the four corners of the photoelectric conversion region 12. FIG. 10 schematically illustrates a second modified example of the arrangement state of the plurality of pixels P2 in the pixel unit 100. Furthermore, as shown in FIG. 11 , one on-chip lens 54A having a size twice that of the on-chip lens 54 may be arranged in place of two on-chip lenses 54 aligned in the X-axis direction. FIG. 11 is a schematic diagram illustrating a third modified example of the arrangement of multiple pixels P2 in the pixel unit 100. In the example of FIG. 11 , the color filters 52 arranged directly below the on-chip lenses 54A are, for example, green color filters 52G that transmit green light. As a result, light transmitted through the on-chip lenses 54A is received by two pixels PG2, thereby enabling image plane phase difference information to be acquired. The color arrangement of the color filters 52 is not particularly limited, and the portions other than the on-chip lenses 54A may be, for example, a Bayer array. Although FIG. 11 illustrates the arrangement of the through electrodes 17 and the readout electrodes 26 at the four corners of the photoelectric conversion region 12, the present disclosure is not limited thereto. 11 , for example, through electrodes 17 may be further arranged near the boundaries between adjacent photoelectric conversion regions 12 and at intermediate positions between the four corners of the photoelectric conversion region 12. Alternatively, through electrodes 17 may not be arranged at the four corners of the photoelectric conversion region 12, and may be arranged only at intermediate positions between the four corners of the photoelectric conversion region 12.

[0083] <3. Third Embodiment> [Configuration of pixel P3] FIG. 12 is a schematic diagram illustrating an example of a cross-sectional configuration of a pixel P3 as an image sensor according to the third embodiment. FIG. 13 is a schematic diagram illustrating an example of an arrangement of a plurality of pixels P3 in the XY plane. Like the pixel P1 as an image sensor according to the first embodiment, the pixel P3 can be used as the pixel P constituting the pixel unit 100 in the solid-state imaging device 1 shown in FIG. 1. However, in this embodiment, as shown in FIG. 13, 16 pixels P3 constitute one pixel group PP3 and share one photoelectric conversion unit 10. Therefore, when the pixel P3 according to the present embodiment is used as the pixel P shown in FIG. 1, for example, the organic photoelectric conversion unit 20 including one charge storage electrode 25 may be driven for each pixel P3, and one photoelectric conversion unit 10 may be driven for each pixel group PP3.

[0084] 13A to 13D show the arrangement at height positions corresponding to levels Lv1 to Lv3 and Lv5 in the Z-axis direction shown in FIG. 12, respectively. That is, FIG. 13A shows the arrangement of the on-chip lenses 54 in the XY plane, FIG. 13B shows the arrangement of the color filters 52 in the XY plane, FIG. 13C shows the arrangement of the charge storage electrodes 25 and the readout electrodes 26 in the XY plane, and FIG. 13D shows the arrangement of the photoelectric conversion regions 12 and the through electrodes 17 in the XY plane. Note that in FIG. 13, the readout electrodes 26 are also shown in FIG. 13D to ensure visibility. Furthermore, in FIG. 13C, the charge storage electrodes 25 and the readout electrodes 26 are shown as if they are partially overlapping, but in reality, the charge storage electrodes 25 and the readout electrodes 26 are spaced apart from each other. 13B, the symbol PR3 represents the red pixel P3, the symbol PG3 represents the green pixel P3, and the symbol PB3 represents the blue pixel P3. The color arrangement of the color filter 52 is not particularly limited, but may be, for example, a Bayer arrangement.

[0085] In the first embodiment, one on-chip lens 54, one color filter 52, one charge storage electrode 25, and one photoelectric conversion region 12 are arranged in positions corresponding to one another in the Z-axis direction in the pixel unit 100. In contrast, in the present embodiment, 16 on-chip lenses 54, 16 color filters 52, and 16 charge storage electrodes 25 are arranged in positions corresponding to one another in the Z-axis direction for one photoelectric conversion region 12. More specifically, for one photoelectric conversion region 12, the on-chip lenses 54, the color filters 52, and the charge storage electrodes 25 are arranged in four columns in the X-axis direction and four rows in the Y-axis direction. That is, in the present embodiment, as shown in FIGS. 12 and 13 , 16 pixels P3 adjacent to one another in both the X-axis direction and the Y-axis direction constitute one pixel group PP3 and share one photoelectric conversion unit 10. Except for this point, the configuration of pixel P3 is substantially the same as that of pixel P1. 13(D) shows an example in which the through electrodes 17 are arranged near the boundaries between adjacent photoelectric conversion regions 12, at the four corners of the photoelectric conversion region 12, and on the straight lines connecting these four corners. Also, in FIG. 13(D), one read electrode 26 is arranged at the center of each of the four pixels P3, and one read electrode 26 is shared by the four pixels P3.

[0086] [Effects of pixel P3] The pixel P3 of the present embodiment has the above-described configuration, and therefore can simultaneously acquire a visible light image and an infrared light image containing distance information at the same position in the in-plane direction. Furthermore, the pixel P3 can reduce the difference in infrared light detection sensitivity among the multiple pixel groups PP3 that make up the pixel unit 100, compared to when the pixel unit 100 is made up of multiple pixels P1.

[0087] Furthermore, in this embodiment, the through electrodes 17 and the read electrodes 26 are provided at positions that do not overlap with the vicinity of the center of each on-chip lens 54 in the Z-axis direction, thereby improving the infrared light detection sensitivity of each pixel P2. Note that Fig. 13 is just an example, and the arrangement positions of the through electrodes 17 and the read electrodes 26 in the multiple pixels P3 arranged in the pixel section 100 of the present disclosure are not limited to this.

[0088] Furthermore, even when a plurality of pixels P3 according to the present embodiment are arranged, the center position of each opening 43K in the inter-pixel region light-shielding film 43 may be shifted from the center position of each pixel P3. This is to reduce variations in the detection characteristics of the plurality of pixels P3 arranged in the pixel unit 100, for example, to avoid a decrease in the detection sensitivity of the pixels P3 arranged in the periphery of the pixel unit 100. In this case, the amount of shift of the center position of each opening 43K from the center position of each pixel P3 may be increased as the distance from the center of the pixel unit 100 approaches the periphery of the pixel unit 100. In particular, it is preferable that the amount of shift change nonlinearly as the distance from the center of the pixel unit 100 approaches the periphery of the pixel unit 100.

[0089] Furthermore, the interval between adjacent pixels P3 may be increased from the center of the pixel unit 100 toward the periphery of the pixel unit 100. In particular, it is preferable that the interval change nonlinearly from the center of the pixel unit 100 toward the periphery of the pixel unit 100. By doing so, it is possible to perform pupil correction according to the image height of each of the multiple pixels P2 arranged in the pixel unit 100, for example.

[0090] <4. Fourth embodiment> [Configuration of pixel P4] FIG. 14 schematically illustrates an example of a cross-sectional configuration of a pixel P4 as an image sensor according to the fourth embodiment. FIG. 15 is a schematic diagram illustrating an example of an arrangement of a plurality of pixels P4 in the XY plane. Like the pixel P1 as an image sensor according to the first embodiment, the pixel P4 can be applied to the pixel P constituting the pixel unit 100 in the solid-state imaging device 1 shown in FIG. 1. However, in this embodiment, as shown in FIGS. 14 and 15, one pixel P4 is composed of four subpixels SP4, and each subpixel SP4 has one charge storage electrode 25 and one photoelectric conversion unit 10. Therefore, when the pixel P4 according to the present embodiment is used as the pixel P shown in FIG. 1, for example, the organic photoelectric conversion unit 20 including one charge storage electrode 25 may be driven for each subpixel SP4, and one photoelectric conversion unit 10 may be driven for each subpixel SP4.

[0091] (A) to (D) of FIG. 15 show the arrangement states at height positions corresponding to levels Lv1 to Lv3 and Lv5 in the Z-axis direction shown in FIG. 14, respectively. That is, (A) of FIG. 15 shows the arrangement state of the on-chip lenses 54 in the XY plane, (B) of FIG. 15 shows the arrangement state of the color filters 52 in the XY plane, (C) of FIG. 15 shows the arrangement state of the charge storage electrodes 25 in the XY plane, and (D) of FIG. 15 shows the arrangement state of the photoelectric conversion regions 12 and the through electrodes 17 in the XY plane. Note that in FIG. 15, the readout electrode 26 is shown in (D) to ensure visibility. In addition, in (B) of FIG. 15, symbol PR4 represents the red pixel P4, symbol PG4 represents the green pixel P4, and symbol PB4 represents the blue pixel P4.

[0092] In the first embodiment, one on-chip lens 54, one color filter 52, one charge storage electrode 25, and one photoelectric conversion region 12 are arranged in positions corresponding to one another in the Z-axis direction in the pixel unit 100. In contrast, in the present embodiment, one color filter 52, four charge storage electrodes 25, and four photoelectric conversion regions 12 are arranged in positions corresponding to one on-chip lens 54 in the Z-axis direction. More specifically, for one on-chip lens 54 and one color filter 52, the charge storage electrodes 25 and the photoelectric conversion regions 12 are arranged in two columns in the X-axis direction and two rows in the Y-axis direction. That is, in the present embodiment, as shown in FIGS. 14 and 15 , four charge storage electrodes 25 and four photoelectric conversion regions 12 are included in one pixel P4. Except for this point, the configuration of pixel P4 is substantially the same as the configuration of pixel P1.

[0093] [Action and effect of pixel P4] The pixel P4 of the present embodiment has the above-described configuration, so that a visible light image and an infrared light image including distance information can be simultaneously acquired at the same position in the in-plane direction. Furthermore, each pixel P4 can acquire image plane phase difference information in the X-axis direction and the Y-axis direction using infrared light.

[0094] In addition, infrared light signals can be obtained at positions corresponding to the red pixel PR4, the green pixel PG4, and the blue pixel PB4, respectively. Therefore, pixel P4 of the present embodiment can obtain an infrared light image with higher resolution than pixel P2 of the second embodiment and pixel P3 of the third embodiment.

[0095] Also in this embodiment, the through electrode 17 and the read electrode 26 are provided at positions that do not overlap with the vicinity of the center of the on-chip lens 54 in the Z-axis direction, thereby improving the infrared light detection sensitivity of each pixel P4.

[0096] Furthermore, even when a plurality of pixels P4 according to the present embodiment are arranged, the central position of each aperture 43K in the inter-pixel region light-shielding film 43 may be shifted from the central position of each sub-pixel SP4. This is to reduce variations in the detection characteristics of the plurality of pixels P4 arranged in the pixel unit 100, for example, to avoid a decrease in the detection sensitivity of the pixels P4 arranged in the periphery of the pixel unit 100. In this case, the amount of shift of the central position of each aperture 43K from the central position of each sub-pixel SP4 may be increased as the distance from the center of the pixel unit 100 approaches the periphery of the pixel unit 100. In particular, it is preferable that the amount of shift change nonlinearly as the distance from the center of the pixel unit 100 approaches the periphery of the pixel unit 100.

[0097] Furthermore, the interval between adjacent pixels P4 may be increased from the center of the pixel unit 100 toward the periphery of the pixel unit 100. In particular, it is preferable that the interval change nonlinearly from the center of the pixel unit 100 toward the periphery of the pixel unit 100. By doing so, it is possible to perform pupil correction according to the image height of each of the multiple pixels P4 arranged in the pixel unit 100, for example.

[0098] 15 is an example, and the positions of the through electrodes 17 and the readout electrodes 26 in the plurality of pixels P4 arranged in the pixel section 100 of the present disclosure are not limited to this. For example, as shown in FIG. 16, the through electrodes 17 may also be arranged near the boundary between adjacent photoelectric conversion regions 12 and at intermediate positions between the four corners of the photoelectric conversion region 12. FIG. 16 schematically shows a modified example of the arrangement of the plurality of pixels P4 in the pixel section 100.

[0099] <5. Fifth Embodiment> [Pixel P5 configuration] FIG. 17 is a schematic diagram illustrating an example of a cross-sectional configuration of a pixel P5 as an image sensor according to the fifth embodiment. FIG. 18 is a schematic diagram illustrating an example of an arrangement of a plurality of pixels P5 in the XY plane. Like the pixel P1 as an image sensor according to the first embodiment, the pixel P5 can be used as the pixel P constituting the pixel unit 100 in the solid-state imaging device 1 illustrated in FIG. 1. However, in this embodiment, as illustrated in FIGS. 17 and 18, one pixel P5 is composed of four subpixels SP5, and each subpixel SP5 has one charge storage electrode 25. Therefore, when the pixel P5 according to the present embodiment is used as the pixel P illustrated in FIG. 1, for example, the organic photoelectric conversion unit 20 including one charge storage electrode 25 may be driven for each subpixel SP5, and one photoelectric conversion unit 10 may be driven for each pixel P5.

[0100] (A) to (D) of FIG. 18 show the arrangement states at height positions corresponding to levels Lv1 to Lv3 and Lv5 in the Z-axis direction shown in FIG. 17, respectively. That is, (A) of FIG. 18 shows the arrangement state of the on-chip lenses 54 in the XY plane, (B) of FIG. 18 shows the arrangement state of the color filters 52 in the XY plane, (C) of FIG. 18 shows the arrangement state of the charge storage electrodes 25 in the XY plane, and (D) of FIG. 18 shows the arrangement state of the photoelectric conversion regions 12 and the through electrodes 17 in the XY plane. Note that in FIG. 18, the readout electrode 26 is shown in (D) to ensure visibility. In addition, in (B) of FIG. 18, symbol PR5 represents the red pixel P5, symbol PG5 represents the green pixel P5, and symbol PB5 represents the blue pixel P5.

[0101] In the first embodiment, one on-chip lens 54, one color filter 52, one charge storage electrode 25, and one photoelectric conversion region 12 are provided in positions corresponding to one another in the Z-axis direction in the pixel unit 100. In contrast, in the present embodiment, one color filter 52, four charge storage electrodes 25, and one photoelectric conversion region 12 are provided in positions corresponding to one on-chip lens 54 in the Z-axis direction. More specifically, for one on-chip lens 54, one color filter 52, and one photoelectric conversion region 12, the charge storage electrodes 25 are arranged in two columns in the X-axis direction and two rows in the Y-axis direction. That is, in the present embodiment, as shown in FIGS. 17 and 18 , four charge storage electrodes 25 are included in one pixel P5. Furthermore, in the pixel P5 of the present embodiment, an inter-pixel region light-shielding film 56 may be provided between the organic photoelectric conversion unit 20 and the on-chip lens 54 in the Z-axis direction, more specifically, between the color filter 52 and the sealing film 51. The inter-pixel region light-shielding film 56 is mainly composed of a metal such as W (tungsten) or Al (aluminum). The inter-pixel region light-shielding film 56 includes a plurality of openings 56K and is provided in the boundary between adjacent pixels P5 in the XY plane, i.e., in the region between the color filters 52 of different colors, so as to form a grid pattern as a whole. This suppresses oblique incidence of unnecessary light on the organic photoelectric conversion unit 20 between adjacent pixels P5, thereby preventing color mixing. Furthermore, the inter-pixel region light-shielding film 56 is provided so as to surround the photoelectric conversion region 12 of each pixel P5 in a plan view. This suppresses oblique incidence of unnecessary light on the photoelectric conversion region 12 between adjacent pixels P5, thereby preventing color mixing. 18(B), the inter-pixel region light-shielding film 56 is indicated by a dashed line. Except for these points, the configuration of pixel P5 is substantially the same as the configuration of pixel P1. In particular, in this embodiment, the arrangement pitch of the color filters 52 and the arrangement pitch of the photoelectric conversion regions 12 are made to match, so that the provision of the inter-pixel region light-shielding film 56 can be expected to have an effect of preventing color mixing in both the organic photoelectric conversion unit 20 and the photoelectric conversion region 12.Here, the center position of each aperture 56K in the inter-pixel region light-shielding film 43 may be shifted from the center position of each pixel P5. This is to reduce variations in the detection characteristics of the multiple pixels P5 arranged in the pixel unit 100, for example, to avoid a decrease in the detection sensitivity of the pixels P5 arranged in the periphery of the pixel unit 100. In this case, the shift amount of the center position of each aperture 56K from the center position of each pixel P5 may be increased as the pixel approaches the periphery of the pixel unit 100 from the center of the pixel unit 100. In particular, the shift amount may change nonlinearly as the pixel approaches the periphery of the pixel unit 100 from the center of the pixel unit 100. Note that the inter-pixel region light-shielding film 56 can be applied to any of the other pixels described in the embodiments and modified examples herein, in addition to the pixel P5 of this embodiment. However, the inter-pixel region light-shielding film 56 may not be provided in any of the pixels described in any of the embodiments and modified examples.

[0102] [Effects of pixel P5] The pixel P5 of the present embodiment has the above-described configuration, and therefore can simultaneously acquire a visible light image and an infrared light image including distance information at the same position in the in-plane direction. Furthermore, each pixel P5 can acquire image plane phase difference information in the X-axis direction and the Y-axis direction using visible light.

[0103] Also in this embodiment, the through electrode 17 and the read electrode 26 are provided at positions that do not overlap with the vicinity of the center of the on-chip lens 54 in the Z-axis direction, thereby improving the infrared light detection sensitivity of each pixel P5.

[0104] Furthermore, even when a plurality of pixels P5 of the present embodiment are arranged, the center position of each opening portion 43K in the inter-pixel region light-shielding film 43 may be shifted from the center position of each pixel P5. This is to reduce variations in the detection characteristics of the plurality of pixels P5 arranged in the pixel unit 100, for example, to avoid a decrease in the detection sensitivity of the pixels P5 arranged in the periphery of the pixel unit 100. In this case, the amount of shift of the center position of each opening portion 43K from the center position of each pixel P5 may be increased as the distance from the center of the pixel unit 100 approaches the periphery of the pixel unit 100. In particular, it is preferable that the amount of shift change nonlinearly as the distance from the center of the pixel unit 100 approaches the periphery of the pixel unit 100.

[0105] Furthermore, the interval between adjacent pixels P5 may be increased from the center of the pixel unit 100 toward the periphery of the pixel unit 100. In particular, it is preferable that the interval change nonlinearly from the center of the pixel unit 100 toward the periphery of the pixel unit 100. By doing so, it is possible to perform pupil correction according to the image height of each of the multiple pixels P5 arranged in the pixel unit 100, for example.

[0106] 18 is merely an example, and the positions of the through electrodes 17 and the readout electrodes 26 in the plurality of pixels P4 arranged in the pixel unit 100 of the present disclosure are not limited thereto. For example, as shown in FIG. 19, the through electrodes 17 may be arranged near the boundary between adjacent photoelectric conversion regions 12 and at intermediate positions between the four corners of the photoelectric conversion region 12. FIG. 19 schematically illustrates a first modified example of the arrangement of the plurality of pixels P5 in the pixel unit 100. Alternatively, as shown in FIG. 20, the through electrodes 17 may be arranged near the boundary between adjacent photoelectric conversion regions 12 and at both the four corners of the photoelectric conversion region 12 and at intermediate positions between the four corners of the photoelectric conversion region 12. FIG. 20 schematically illustrates a second modified example of the arrangement of the plurality of pixels P5 in the pixel unit 100.

[0107] Furthermore, as shown in FIGS. 21A and 21B, in each pixel P5, the center position of the color filter 52 and the center position of the photoelectric conversion region 12 may be offset by half in both the X-axis direction and the Y-axis direction. This reduces variations in the infrared light sensitivity of each photoelectric conversion region 12. FIGS. 21A and 21B schematically illustrate a third modified example of the arrangement of multiple pixels P5 in the pixel unit 100. FIG. 21A particularly illustrates the positional relationship between the on-chip lens 54, the photoelectric conversion region 12, the through electrode 17, and the readout electrode 26. FIG. 21B particularly illustrates the positional relationship between the on-chip lens 54, the color filter 52, and the photoelectric conversion region 12.

[0108] 6. Sixth Embodiment [Pixel P6 configuration] FIG. 22 is a schematic diagram illustrating an example of a cross-sectional configuration of a pixel P6 as an image sensor according to the sixth embodiment. FIG. 23 is a schematic diagram illustrating an example of an arrangement of multiple pixels P6 in the XY plane. Like the pixel P1 as an image sensor according to the first embodiment, the pixel P6 can be used as the pixel P constituting the pixel unit 100 in the solid-state imaging device 1 illustrated in FIG. 1. However, in this embodiment, as illustrated in FIGS. 22 and 23, one pixel P6 is composed of four subpixels SP4, and each subpixel SP6 has one charge storage electrode 25. The four pixels P6 form one pixel group PP6 and share one photoelectric conversion unit 10. Therefore, when the pixel P6 according to the present embodiment is used as the pixel P illustrated in FIG. 1, for example, the organic photoelectric conversion unit 20 including one charge storage electrode 25 may be driven for each subpixel SP6, and one photoelectric conversion unit 10 may be driven for each pixel group PP6.

[0109] 23A to 23D show the arrangement at height positions corresponding to levels Lv1 to Lv3 and Lv5 in the Z-axis direction shown in FIG. 22, respectively. That is, FIG. 23A shows the arrangement of the on-chip lenses 54 in the XY plane, FIG. 23B shows the arrangement of the color filters 52 in the XY plane, FIG. 23C shows the arrangement of the charge storage electrodes 25 in the XY plane, and FIG. 23D shows the arrangement of the photoelectric conversion regions 12 and the through electrodes 17 in the XY plane. Note that in FIG. 23D, the readout electrode 26 is shown in (D) to ensure visibility. In addition, in FIG. 23B, the symbol PR6 represents the red pixel P6, the symbol PG6 represents the green pixel P6, and the symbol PB6 represents the blue pixel P6.

[0110] In the first embodiment, one on-chip lens 54, one color filter 52, one charge storage electrode 25, and one photoelectric conversion region 12 are arranged in positions corresponding to one another in the Z-axis direction in the pixel unit 100. In contrast, in the present embodiment, four on-chip lenses 54, four color filters 52, and 16 charge storage electrodes 25 are arranged in positions corresponding to one another in the Z-axis direction for one photoelectric conversion region 12. More specifically, for one photoelectric conversion region 12, the on-chip lenses 54 and the color filters 52 are arranged in two columns in the X-axis direction and two rows in the Y-axis direction, and the charge storage electrodes 25 are arranged in four columns in the X-axis direction and four rows in the Y-axis direction. That is, in the present embodiment, as shown in FIGS. 22 and 23 , four pixels P6 adjacent to one another in both the X-axis direction and the Y-axis direction constitute one pixel group PP6 and share one photoelectric conversion unit 10. Except for this point, the configuration of pixel P6 is substantially the same as that of pixel P1.

[0111] [Effects of pixel P6] The pixel P6 of the present embodiment has the above-described configuration, so that a visible light image and an infrared light image including distance information can be simultaneously acquired at the same position in the in-plane direction. Furthermore, each pixel P6 can acquire image plane phase difference information in the X-axis direction and the Y-axis direction using visible light.

[0112] Also in this embodiment, the through electrode 17 and the read electrode 26 are provided at positions that do not overlap with the vicinity of the center of the on-chip lens 54 in the Z-axis direction, thereby improving the infrared light detection sensitivity of each pixel P6.

[0113] Furthermore, even when a plurality of pixels P6 according to the present embodiment are arranged, the center position of each aperture 43K in the inter-pixel region light-shielding film 43 may be shifted from the center position of each pixel P5. This is to reduce variations in the detection characteristics of the plurality of pixels P6 arranged in the pixel unit 100, for example, to avoid a decrease in the detection sensitivity of the pixels P6 arranged in the periphery of the pixel unit 100. In this case, the amount of shift of the center position of each aperture 43K from the center position of each pixel P6 may be increased as the distance from the center of the pixel unit 100 approaches the periphery of the pixel unit 100. In particular, it is preferable that the amount of shift change nonlinearly as the distance from the center of the pixel unit 100 approaches the periphery of the pixel unit 100.

[0114] Furthermore, the interval between adjacent pixels P6 may be increased from the center of the pixel unit 100 toward the periphery of the pixel unit 100. In particular, it is preferable that the interval change nonlinearly from the center of the pixel unit 100 toward the periphery of the pixel unit 100. By doing so, it is possible to perform pupil correction according to the image height of each of the multiple pixels P6 arranged in the pixel unit 100, for example.

[0115] 23 is just an example, and the arrangement positions of the through electrodes 17 and the read electrodes 26 in the plurality of pixels P6 arranged in the pixel unit 100 of the present disclosure are not limited to this. For example, as shown in FIG. 24, the through electrodes 17 may be arranged near the boundary between adjacent pixel groups PP6 so as to surround each on-chip lens 54. FIG. 24 schematically shows a modified example of the arrangement state of the plurality of pixels P6 in the pixel unit 100.

[0116] 7. Seventh Embodiment [Configuration of pixel P7] 25 is a schematic diagram illustrating an example of a cross-sectional configuration of pixel P7 as an image sensor according to the seventh embodiment. Similar to pixel P1 as an image sensor according to the first embodiment, pixel P7 can be used as pixel P constituting pixel unit 100 in solid-state imaging device 1 shown in FIG.

[0117] In addition to the configuration of pixel P1, pixel P7 of this embodiment further includes a pair of charge storage units (MEMs) 143A and 143B on the surface 11A of the semiconductor substrate 11. The MEMs 143A and 143B temporarily store the charges generated and accumulated in the photoelectric conversion region 12 to share the FDs 15A and 15B with other pixels. Except for this point, the configuration of pixel P7 is essentially the same as that of pixel P1. The MEMs 143A and 143B have a structure in which an insulating film and an electrode are stacked on the surface 11A side. Alternatively, other configurations may be used, such as excluding the floating diffusion layers of 15A and 15B, and placing the charge storage units 143A and 143B next to the TGs 141A and 141B, and then placing the FDs 15A and 15B next to them. The MEMs 143A and 143B may be applied to any of the other pixels described in the present specification as embodiments and modifications, in addition to pixel P7 of this embodiment.

[0118] [Action and effect of pixel P7] According to pixel P7 of this embodiment, the photoelectric conversion unit 10 includes MEMs 143A and 143B, which allows the floating diffusion layers of 15A and 15B to be shared, improving the placement efficiency of the image sensor on the semiconductor substrate. For example, increasing the area of ​​the amplifier transistor can improve the noise characteristics of the photoelectric conversion film. In addition, pixel P7 has the same functions and effects as pixel P1 of the first embodiment.

[0119] 8. Eighth Embodiment 26 schematically illustrates an example of a cross-sectional configuration of pixel P8 as an image sensor according to the eighth embodiment. Similar to pixel P1 as an image sensor according to the first embodiment, pixel P8 can be used as pixel P constituting pixel unit 100 in solid-state imaging device 1 shown in FIG.

[0120] The pixel P8 of this embodiment is configured such that, in addition to the configuration of the pixel P1 described in the first embodiment, an optical filter 61 is further provided on the incident side of the on-chip lens 54, i.e., on the opposite side of the organic photoelectric conversion unit 20 as viewed from the on-chip lens 54. However, FIG. 26 illustrates an example in which a plurality of color filters 52 of different colors are arranged for one optical filter 61, one on-chip lens 54, one organic photoelectric conversion layer 22, one optical filter 42, and one photoelectric conversion region 12. For convenience, FIG. 26 illustrates color filters 52-1 and 52-2 of different colors. Except for this, the configuration of the pixel P8 is substantially the same as the configuration of the pixel P1. Note that the pixel P8 is not limited to the one illustrated in FIG. 26. For example, one color filter 52 may be provided for one optical filter 61, or a plurality of on-chip lenses 54, organic photoelectric conversion layers 22, optical filters 42, and photoelectric conversion regions 12 may be provided for one optical filter 61. The organic photoelectric conversion layer 22 may be provided in common to some pixels P8, or may be provided in common to all of the pixels P8 in the pixel section 100. Alternatively, one optical filter 61 may be provided so as to span the plurality of pixels P8. The optical filter 61 is applicable to any of the pixels P1 to P7 described in the first to seventh embodiments and their respective modified examples.

[0121] 27A to 27C schematically show the wavelength dependence of the light transmittance of each of the optical filter 61, the color filter 52, and the optical filter 42 in pixel P8. Specifically, FIG. 27A shows the light transmittance distribution of the optical filter 61, FIG. 27B shows the light transmittance distribution of the color filter 52, and FIG. 27C shows the light transmittance distribution of the optical filter 42. Furthermore, FIG. 27D shows the relationship between the wavelength incident on the organic photoelectric conversion layer 22 and the sensitivity of the organic photoelectric conversion layer 22 to the incident light, and the relationship between the wavelength incident on the photoelectric conversion region 12 and the sensitivity of the photoelectric conversion region 12 to the incident light. Note that in FIG. 27B, the light transmittance distribution curve of the red color filter 52R is indicated by R, the light transmittance distribution curve of the green color filter 52G is indicated by G, and the light transmittance distribution curve of the blue color filter 52B is indicated by B. 27C, the light transmittance distribution of optical filter 61 is represented by a dashed line, and the light transmittance distribution of optical filter 42 is represented by a solid line. Optical filter 61 is a so-called dual bandpass filter, and is an optical member that has transmission wavelength ranges in both the visible light region and the infrared light region and selectively transmits visible light (e.g., light having a wavelength of 400 nm or more and 650 nm or less) and a portion of infrared light (e.g., light having a wavelength of 800 nm or more and 900 nm or less). Of the incident light, visible light and a portion of infrared light are transmitted through optical filter 61 (FIG. 27A). Of the light transmitted through optical filter 61, for example, visible light in the blue region and a portion of infrared light are transmitted through blue color filter 52B (FIG. 27B). When the organic photoelectric conversion layer 22 is configured to detect some or all wavelengths in the visible light range but not have sensitivity to infrared light, visible light in the blue range among the light transmitted through the blue color filter 52B is absorbed by the organic photoelectric conversion layer 22, and some infrared light among the light transmitted through the blue color filter 52B is transmitted through the organic photoelectric conversion layer 22. Of the light transmitted through the organic photoelectric conversion layer 22, infrared light transmitted through the optical filter 42 enters the photoelectric conversion region 12. The same applies to the red color filter 52R and the green color filter 52G. As a result, as shown in FIG. 27D, visible light information (R, G, B) is acquired in the organic photoelectric conversion layer 22, and infrared light information (IR) is acquired in the photoelectric conversion region 12.As shown in Figures 27A to 27D, in pixel P8, only infrared light in a predetermined wavelength range that has passed through all of the optical filter 61, color filter 52, organic photoelectric conversion layer 22, and optical filter 42 selectively enters the photoelectric conversion region 12 and is photoelectrically converted.

[0122] Note that the characteristics shown in FIGS. 27A to 27D are merely examples, and the light transmittance distributions of optical filters applicable to pixel P8 are not limited to those shown in FIGS. 27A to 27D. For example, optical filter 61A as a modified example shown in FIGS. 28A to 28D may selectively transmit light in a continuous wavelength range from the visible light range to part of the infrared light range. Specifically, FIG. 28A shows the light transmittance distribution of optical filter 61A, FIG. 28B shows the light transmittance distribution of color filter 52, and FIG. 28C shows the light transmittance distribution of optical filter 42. Furthermore, FIG. 28D shows the relationship between the wavelength incident on organic photoelectric conversion layer 22 and the sensitivity of organic photoelectric conversion layer 22 to incident light, and the relationship between the wavelength incident on photoelectric conversion region 12 and the sensitivity of photoelectric conversion region 12 to incident light, when optical filter 61A is used.

[0123] 9. Ninth Embodiment 29 is a schematic diagram illustrating an example of a cross-sectional configuration of a pixel P9 serving as an image sensor according to the ninth embodiment. Similar to the pixel P1 serving as an image sensor according to the first embodiment, the pixel P9 can be used as the pixel P constituting the pixel unit 100 in the solid-state imaging device 1 shown in FIG.

[0124] In addition to the configuration of pixel P8 described in the above eighth embodiment, pixel P9 of the present embodiment further includes an inner lens INL between the organic photoelectric conversion unit 20 and the photoelectric conversion unit 10, more specifically, between the organic photoelectric conversion layer 22 and the optical filter 42. Except for this point, the configuration of pixel P9 is substantially the same as the configuration of pixel P8. Note that the configuration in which an inner lens INL is provided between the organic photoelectric conversion layer 22 and the optical filter 42 can be applied to any of pixels P1 to P7 described in the above first to seventh embodiments and their respective modified examples.

[0125] Furthermore, an optical waveguide WG may be provided instead of the inner lens INL, as in pixel P9A shown in Fig. 30. Fig. 30 is a schematic diagram illustrating a cross-sectional configuration of pixel P9A as an image sensor that is a modification of the ninth embodiment. Note that the configuration in which an optical waveguide WG is provided between the organic photoelectric conversion layer 22 and the optical filter 42 is applicable to any of the pixels P1 to P7 described in the first to seventh embodiments and their modifications.

[0126] Fig. 31 is a schematic diagram showing an example of the arrangement of multiple pixels P9, P9A in the XY plane. (A) to (E) of Fig. 31 show the arrangement at height positions corresponding to levels Lv1 to Lv5 in the Z-axis direction shown in Fig. 29 and Fig. 30, respectively. That is, (A) of Fig. 31 shows the arrangement of on-chip lenses 54 in the XY plane, (B) of Fig. 31 shows the arrangement of color filters 52 in the XY plane, (C) of Fig. 31 shows the arrangement of charge storage electrodes 25 in the XY plane, (D) of Fig. 31 shows the arrangement of inner lenses INL or optical waveguides WG in the XY plane, and (E) of Fig. 31 shows the arrangement of photoelectric conversion regions 12 and through-electrodes 17 in the XY plane. 31B, the symbols PR9 and PR9A represent red pixels P9 and P9A, the symbols PG9 and PG9A represent green pixels P9 and P9A, and the symbols PB9 and PB9A represent blue pixels P9 and P9A. In FIG. 31E, the through electrodes 17 are arranged near the boundaries between adjacent photoelectric conversion regions 12 at the four corners of the photoelectric conversion regions 12, but the arrangement positions of the through electrodes 17 are not limited thereto. For example, the through electrodes 17 may be arranged at intermediate positions between the four corners of the photoelectric conversion regions 12. Alternatively, the through electrodes 17 may be arranged near the boundaries between adjacent photoelectric conversion regions 12 at both the four corners of the photoelectric conversion regions 12 and intermediate positions between the four corners of the photoelectric conversion regions 12. 31(E) shows the inter-pixel region light-shielding film 43, the pixels P9 and P9A according to this embodiment and its modified example may not have the inter-pixel region light-shielding film 43.

[0127] In the pixels P9 and 9A of this embodiment and its modified examples, an inner lens INL or an optical waveguide WG is provided, so that even if the incident light is inclined with respect to the back surface 11B extending in the XY plane, for example, vignetting at the inter-pixel region light-shielding wall 16 can be avoided, and the oblique incidence characteristics can be improved.

[0128] Furthermore, as shown in FIGS. 32A and 32B , in each pixel P9, the center position of the color filter 52 and the center position of the photoelectric conversion region 12 may be shifted by half in both the X-axis direction and the Y-axis direction. In this case, the position of the inner lens INL may also be shifted according to the position of the photoelectric conversion region 12. This reduces variations in the infrared light sensitivity of each photoelectric conversion region 12 and suppresses color mixing between adjacent pixels P9. FIGS. 32A and 32B schematically illustrate a modified example of the arrangement of multiple pixels P9 in the pixel unit 100. FIG. 32A particularly illustrates the positional relationship between the on-chip lens 54, the photoelectric conversion region 12, the through electrode 17, and the readout electrode 26. FIG. 32B particularly illustrates the positional relationship between the on-chip lens 54, the color filter 52, the inner lens INL, and the photoelectric conversion region 12. The same applies to pixel 9A that uses an optical waveguide WG instead of inner lens INL. Furthermore, even when neither inner lens INL nor optical waveguide WG is used, the center position of the color filter 52 and the center position of the photoelectric conversion region 12 may be shifted by half in both the X-axis direction and the Y-axis direction, as in the embodiment shown in Figures 32A and 32B. Note that the positions of the through electrodes 17 and the readout electrodes 26 in the multiple pixels P9 and P9A arranged in the pixel section 100 of the present disclosure are not limited to the positions shown in Figures 31 and 32A.

[0129] <10. Tenth Embodiment> 33A and 33B are respectively a vertical cross-sectional view and a horizontal cross-sectional view enlarging the vicinity of through electrode 17 in an image sensor according to the tenth embodiment. Note that FIG. 33A shows a cross section taken along the AA cutting line shown in FIG. 33B. The configuration of this embodiment is applicable to any of pixels P1 to P9 in the first to ninth embodiments and their modified versions.

[0130] This embodiment has a configuration in which a metal layer 18 is provided that surrounds the through electrode 17 in the XY cross section and extends in the Z-axis direction. The through electrode 17 and the metal layer 18 are electrically insulated by an insulating layer Z1 that fills the gap between them. The metal layer 18 may also serve as, for example, the inter-pixel region light-shielding wall 16. A fixed charge layer 13 is provided outside the metal layer 18 via an insulating layer Z2.

[0131] The through electrode 17 is formed of, for example, tungsten (W). The metal layer 18 is formed of, for example, tungsten (W). However, aluminum or the like can also be used for the metal layer 18. The insulating layers Z1 and Z2 are formed of, for example, an insulating material such as SiOx (silicon oxide) or aluminum oxide. Instead of the insulating layer Z1, a gap may be provided between the inter-pixel region light-shielding wall 16 and the through electrode 17 to insulate the inter-pixel region light-shielding wall 16 from the through electrode 17. Similarly, instead of the insulating layer Z2, a gap may be provided between the inter-pixel region light-shielding wall 16 and the fixed charge layer 13 to insulate the inter-pixel region light-shielding wall 16 from the fixed charge layer 13. Note that the constituent materials of each component are not limited to those described above.

[0132] The through electrode 17 is a transmission path for transmitting, for example, signal charges generated in the organic photoelectric conversion unit 20 and a voltage for driving the charge storage electrode 25. The metal layer 18 functions as both a light-shielding wall in the inter-pixel region and an electrostatic shielding film. Without the metal layer 18, when the fixed charge layer 13 has, for example, negative fixed charges, application of a positive voltage to the through electrode 17 may impair the function of the fixed charge layer 13 and result in the generation of dark current. Therefore, providing the metal layer 18 to electrically shield the through electrode 17 from the fixed charge layer 13 can suppress the generation of such dark current. Note that, of the metal layer 18 shown in FIG. 33B , the portion other than the portion surrounding the through electrode 17 can be replaced with a light-shielding, non-conductive material. This is because the metal layer 18 surrounding the through electrode 17, if made of a metal material such as tungsten or aluminum, can achieve the aforementioned electrostatic shielding effect. Furthermore, when the metal layer 18 is provided as an electrostatic shielding film, the portion of the metal layer 18 other than the portion surrounding the through electrode 17 does not need to be provided.

[0133] The vicinity of the through electrode 17 may also be configured as shown in FIGS. 34A and 34B. The configurations shown in FIGS. 34A and 34B are the same as those shown in FIGS. 33A and 33B, except that they do not include the fixed charge layer 13 disposed opposite the metal layer 18 via the insulating layer Z2. The metal layer 18 is a light-shielding wall in the inter-pixel region, shielding the electric field of the through electrode and preventing the voltage applied to the through electrode 17 from affecting the semiconductor substrate 11. Furthermore, applying an appropriate voltage to the metal layer 18 can achieve the same effect as a fixed charge layer. Furthermore, the metal layer 18 shown in FIG. 34B, except for the portion surrounding the through electrode 17, can be replaced with a light-shielding, non-conductive material. It is also preferable to provide the fixed charge layer 13 on the back surface 11B of the semiconductor substrate 11 in the configurations shown in FIGS. 34A and 34B.

[0134] The configuration of the present embodiment shown in FIGS. 33A and 33B and FIGS. 34A and 34B, i.e., the configuration in which the metal layer 18 surrounding the through electrode 17 in the XY cross section and extending in the Z-axis direction is provided, can be applied to pixels other than those shown in the first to ninth embodiments. For example, it can be applied to pixel P10 shown in FIG. 35, which is a modified example of the tenth embodiment. In pixel P10, the readout electrode 26 extends across the entire pixel P10, for example, and does not include a semiconductor layer 21 or a charge storage electrode 25. Furthermore, in pixel P10 shown in FIG. 35, one TG 141, one FD 15, etc. are provided for each photoelectric conversion region 12. Furthermore, as described above, a metal layer 18 is provided that also serves as the inter-pixel region light-shielding wall 16. Except for these points, pixel P10 shown in FIG. 35 has substantially the same configuration as pixel P1 shown in FIG. 2A, etc. 35, pixel P10 has a color filter 52, but pixel P10 does not necessarily have to have a color filter 52. Furthermore, the wavelength ranges to which the organic photoelectric conversion unit 20 and the photoelectric conversion unit 10 in pixel P10 are sensitive can be set arbitrarily. Furthermore, the organic photoelectric conversion layer 22 of the organic photoelectric conversion unit 20 may be made of a photoelectric conversion material other than an organic substance, for example, quantum dots.

[0135] <11. Eleventh Embodiment> FIG. 36A is a schematic diagram illustrating an example of the overall configuration of a light detection system 201 according to an eleventh embodiment of the present disclosure. FIG. 36B is a schematic diagram illustrating an example of a circuit configuration of the light detection system 201. The light detection system 201 includes a light emitting device 210 serving as a light source unit that emits infrared light L2, and a light detecting device 220 serving as a light receiving unit having a photoelectric conversion element. The above-described solid-state imaging device 1 can be used as the light detecting device 220. The light detection system 201 may further include a system control unit 230, a light source driving unit 240, a sensor control unit 250, a light source side optical system 260, and a camera side optical system 270.

[0136] The photodetector 220 can detect light L1 and light L2. Light L1 is external ambient light reflected by the object (measurement target) 200 (FIG. 36A). Light L2 is light emitted by the light-emitting device 210 and then reflected by the object 200. Light L1 is, for example, visible light, and light L2 is, for example, infrared light. Light L1 can be detected by an organic photoelectric conversion unit in the photodetector 220, and light L2 can be detected by a photoelectric conversion unit in the photodetector 220. Image information of the object 200 can be obtained from light L1, and distance information between the object 200 and the photodetector system 201 can be obtained from light L2. The photodetector system 201 can be mounted on an electronic device such as a smartphone or a mobile object such as a car. The light-emitting device 210 can be configured, for example, by a semiconductor laser, a surface-emitting semiconductor laser, or a vertical-cavity surface-emitting laser (VCSEL). The method of detecting the light L2 emitted from the light-emitting device 210 by the photodetector 220 can be, for example, an iTOF method, but is not limited to this. In the iTOF method, the photoelectric conversion unit can measure the distance to the subject 200 using, for example, time-of-flight (TOF). The method of detecting the light L2 emitted from the light-emitting device 210 by the photodetector 220 can also be, for example, a structured light method or a stereo vision method. For example, in the structured light method, a predetermined pattern of light is projected onto the subject 200 and the distance between the light detection system 201 and the subject 200 can be measured by analyzing the distortion of the pattern. In addition, in the stereo vision method, for example, two or more cameras are used to acquire two or more images of the subject 200 viewed from two or more different viewpoints, thereby measuring the distance between the light detection system 201 and the subject. The light-emitting device 210 and the photodetector 220 can be synchronously controlled by the system control unit 230.

[0137] <12. Application examples to electronic devices> 37 is a block diagram showing an example configuration of an electronic device 2000 to which the present technology is applied. The electronic device 2000 has a function as, for example, a camera.

[0138] The electronic device 2000 includes an optical unit 2001 including a lens group and the like, a photodetector 2002 to which the above-described solid-state imaging device 1 or the like (hereinafter referred to as the solid-state imaging device 1, etc.) is applied, and a DSP (Digital Signal Processor) circuit 2003 which is a camera signal processing circuit. The electronic device 2000 also includes a frame memory 2004, a display unit 2005, a recording unit 2006, an operation unit 2007, and a power supply unit 2008. The DSP circuit 2003, the frame memory 2004, the display unit 2005, the recording unit 2006, the operation unit 2007, and the power supply unit 2008 are connected to one another via a bus line 2009.

[0139] The optical unit 2001 takes in incident light (image light) from a subject and forms an image on the imaging surface of the photodetector 2002. The photodetector 2002 converts the amount of incident light formed on the imaging surface by the optical unit 2001 into an electrical signal on a pixel-by-pixel basis and outputs the signal as a pixel signal.

[0140] The display unit 2005 is formed of a panel display device such as a liquid crystal panel or an organic EL panel, and displays moving images or still images captured by the photodetector 2002. The recording unit 2006 records the moving images or still images captured by the photodetector 2002 in a recording medium such as a hard disk or a semiconductor memory.

[0141] An operation unit 2007, under the operation of a user, issues operation commands for various functions of the electronic device 2000. A power supply unit 2008 appropriately supplies various types of power to the DSP circuit 2003, frame memory 2004, display unit 2005, recording unit 2006, and operation unit 2007 as operating power sources.

[0142] As described above, by using the above-described solid-state imaging device 1 or the like as the photodetector 2002, it is possible to expect to obtain a good image.

[0143] <13. Application example to in-body information acquisition system> The technology according to the present disclosure (the present technology) can be applied to various products. For example, the technology according to the present disclosure may be applied to an endoscopic surgery system.

[0144] FIG. 38 is a block diagram showing an example of a schematic configuration of a system for acquiring information from within a patient's body using a capsule endoscope, to which the technology according to the present disclosure (the present technology) can be applied.

[0145] The in-vivo information acquisition system 10001 includes a capsule endoscope 10100 and an external control device 10200 .

[0146] The capsule endoscope 10100 is swallowed by a patient during an examination. The capsule endoscope 10100 has an imaging function and a wireless communication function, and moves inside organs such as the stomach and intestines by peristaltic movement or the like until it is naturally excreted from the patient, sequentially capturing images of the inside of the organs (hereinafter also referred to as in-vivo images) at predetermined intervals, and sequentially wirelessly transmitting information about the in-vivo images to an external control device 10200 outside the body.

[0147] The external control device 10200 comprehensively controls the operation of the in-vivo information acquisition system 10001. In addition, the external control device 10200 receives information about the in-vivo image transmitted from the capsule endoscope 10100, and generates image data for displaying the in-vivo image on a display device (not shown) based on the received information about the in-vivo image.

[0148] In this way, the in-vivo information acquisition system 10001 can obtain in-vivo images of the state inside the patient's body at any time from the time the capsule endoscope 10100 is swallowed until it is expelled.

[0149] The configurations and functions of the capsule endoscope 10100 and the external control device 10200 will be described in more detail.

[0150] The capsule endoscope 10100 has a capsule-shaped housing 10101, which houses a light source unit 10111, an imaging unit 10112, an image processing unit 10113, a wireless communication unit 10114, a power supply unit 10115, a power supply unit 10116, and a control unit 10117.

[0151] The light source unit 10111 is configured from a light source such as an LED (light emitting diode), and irradiates the imaging field of the imaging unit 10112 with light.

[0152] The imaging unit 10112 is composed of an imaging element and an optical system consisting of multiple lenses provided in front of the imaging element. Reflected light (hereinafter referred to as observation light) of light irradiated onto the body tissue to be observed is collected by the optical system and incident on the imaging element. In the imaging unit 10112, the imaging element photoelectrically converts the incident observation light, generating an image signal corresponding to the observation light. The image signal generated by the imaging unit 10112 is provided to the image processing unit 10113.

[0153] The image processing unit 10113 is configured with processors such as a CPU (Central Processing Unit) and a GPU (Graphics Processing Unit), and performs various signal processing on the image signal generated by the imaging unit 10112. The image processing unit 10113 provides the image signal after signal processing to the wireless communication unit 10114 as RAW data.

[0154] The wireless communication unit 10114 performs predetermined processing such as modulation processing on the image signal that has been subjected to signal processing by the image processing unit 10113, and transmits the image signal to the external control device 10200 via the antenna 10114A. The wireless communication unit 10114 also receives a control signal related to drive control of the capsule endoscope 10100 from the external control device 10200 via the antenna 10114A. The wireless communication unit 10114 provides the control signal received from the external control device 10200 to the control unit 10117.

[0155] The power supply unit 10115 is composed of an antenna coil for receiving power, a power regeneration circuit that regenerates power from the current generated in the antenna coil, a boost circuit, etc. The power supply unit 10115 generates power using the principle of so-called contactless charging.

[0156] The power supply unit 10116 is composed of a secondary battery and stores the power generated by the power supply unit 10115. In Fig. 38, to avoid cluttering the drawing, arrows and other symbols indicating the destinations of the power supply unit 10116 are omitted, but the power stored in the power supply unit 10116 is supplied to the light source unit 10111, the imaging unit 10112, the image processing unit 10113, the wireless communication unit 10114, and the control unit 10117 and can be used to drive these units.

[0157] The control unit 10117 is composed of a processor such as a CPU, and appropriately controls the operation of the light source unit 10111, the imaging unit 10112, the image processing unit 10113, the wireless communication unit 10114, and the power supply unit 10115 in accordance with control signals transmitted from the external control device 10200.

[0158] The external control device 10200 is configured with a microcomputer or a control board or the like equipped with a processor such as a CPU or a GPU, or a processor and a storage element such as a memory. The external control device 10200 controls the operation of the capsule endoscope 10100 by transmitting a control signal to the control unit 10117 of the capsule endoscope 10100 via the antenna 10200A. In the capsule endoscope 10100, for example, the control signal from the external control device 10200 can change the light irradiation conditions of the light source unit 10111 for the observation object. Furthermore, the control signal from the external control device 10200 can change the imaging conditions (for example, the frame rate, exposure value, etc. in the imaging unit 10112). Furthermore, the control signal from the external control device 10200 can change the content of processing in the image processing unit 10113 and the conditions for transmitting an image signal from the wireless communication unit 10114 (for example, the transmission interval, the number of transmitted images, etc.).

[0159] The external control device 10200 also performs various image processing on the image signal transmitted from the capsule endoscope 10100 to generate image data for displaying the captured in-vivo image on a display device. The image processing can include various signal processing such as development processing (demosaic processing), high-quality image processing (band enhancement processing, super-resolution processing, NR (Noise Reduction) processing, and / or image stabilization processing, etc.), and / or enlargement processing (electronic zoom processing). The external control device 10200 controls the driving of the display device to display the captured in-vivo image based on the generated image data. Alternatively, the external control device 10200 may record the generated image data in a recording device (not shown) or print it out on a printing device (not shown).

[0160] An example of an in-vivo information acquisition system to which the technology according to the present disclosure can be applied has been described above. The technology according to the present disclosure can be applied to, for example, the image capturing unit 10112 among the above-described configurations. Therefore, high image detection accuracy can be obtained despite the small size.

[0161] <14. Application example to endoscopic surgery system> The technology according to the present disclosure (the present technology) can be applied to various products. For example, the technology according to the present disclosure may be applied to an endoscopic surgery system.

[0162] FIG. 39 is a diagram showing an example of a schematic configuration of an endoscopic surgery system to which the technology according to the present disclosure (the present technology) can be applied.

[0163] Figure 39 shows an operator (doctor) 11131 performing surgery on a patient 11132 on a patient bed 11133 using an endoscopic surgery system 11000. As shown in the figure, the endoscopic surgery system 11000 is composed of an endoscope 11100, other surgical tools 11110 such as an insufflation tube 11111 and an energy treatment tool 11112, a support arm device 11120 that supports the endoscope 11100, and a cart 11200 on which various devices for endoscopic surgery are mounted.

[0164] The endoscope 11100 is composed of a lens barrel 11101, a region of a predetermined length from the tip of which is inserted into a body cavity of a patient 11132, and a camera head 11102 connected to the base end of the lens barrel 11101. In the example shown, the endoscope 11100 is configured as a so-called rigid scope having a rigid lens barrel 11101, but the endoscope 11100 may also be configured as a so-called flexible scope having a flexible lens barrel.

[0165] An opening into which an objective lens is fitted is provided at the tip of the lens barrel 11101. A light source device 11203 is connected to the endoscope 11100, and light generated by the light source device 11203 is guided to the tip of the lens barrel by a light guide extending inside the lens barrel 11101, and is irradiated via the objective lens towards an object to be observed inside the body cavity of the patient 11132. The endoscope 11100 may be a direct-viewing endoscope, an oblique-viewing endoscope, or a side-viewing endoscope.

[0166] An optical system and an image sensor are provided inside the camera head 11102, and light reflected from the object of observation (observation light) is collected onto the image sensor by the optical system. The observation light is photoelectrically converted by the image sensor to generate an electrical signal corresponding to the observation light, i.e., an image signal corresponding to the observed image. The image signal is sent to a camera control unit (CCU) 11201 as RAW data.

[0167] The CCU 11201 is configured with a CPU (Central Processing Unit), a GPU (Graphics Processing Unit), etc., and comprehensively controls the operations of the endoscope 11100 and the display device 11202. Furthermore, the CCU 11201 receives an image signal from the camera head 11102, and performs various image processing on the image signal, such as development processing (demosaic processing), to display an image based on the image signal.

[0168] Under the control of the CCU 11201, the display device 11202 displays an image based on an image signal that has been subjected to image processing by the CCU 11201.

[0169] The light source device 11203 is configured from a light source such as an LED (light emitting diode), and supplies irradiation light to the endoscope 11100 when photographing an operation site or the like.

[0170] The input device 11204 is an input interface for the endoscopic surgery system 11000. A user can input various information and instructions to the endoscopic surgery system 11000 via the input device 11204. For example, the user inputs an instruction to change the imaging conditions (type of irradiating light, magnification, focal length, etc.) of the endoscope 11100.

[0171] The treatment tool control device 11205 controls the driving of the energy treatment tool 11112 for cauterizing tissue, incising, sealing blood vessels, etc. The insufflation device 11206 inflates the body cavity of the patient 11132 through the insufflation tube 11111 in order to ensure a clear field of view for the endoscope 11100 and a working space for the surgeon. The recorder 11207 is a device capable of recording various types of information related to the surgery. The printer 11208 is a device capable of printing various types of information related to the surgery in various formats such as text, images, or graphs.

[0172] The light source device 11203 that supplies illumination light to the endoscope 11100 when photographing the surgical site can be configured from a white light source configured from, for example, an LED, a laser light source, or a combination of these. When the white light source is configured from a combination of RGB laser light sources, the output intensity and output timing of each color (each wavelength) can be controlled with high precision, making it possible to adjust the white balance of the captured image in the light source device 11203. In this case, it is also possible to capture images corresponding to each RGB in a time-division manner by irradiating the object of observation with laser light from each RGB laser light source in a time-division manner and controlling the drive of the image sensor of the camera head 11102 in synchronization with the irradiation timing. According to this method, a color image can be obtained without providing a color filter to the image sensor.

[0173] Furthermore, the light source device 11203 may be controlled to change the intensity of light it outputs at predetermined time intervals. By controlling the driving of the image sensor of the camera head 11102 in synchronization with the timing of the change in light intensity to acquire images in a time-division manner and combining the images, it is possible to generate an image with a high dynamic range that is free of so-called blocked-up shadows and blown-out highlights.

[0174] The light source device 11203 may also be configured to supply light in a predetermined wavelength band corresponding to special light observation. Special light observation, for example, utilizes the wavelength dependence of light absorption in body tissues to irradiate light with a narrower band than the light irradiated during normal observation (i.e., white light), thereby capturing high-contrast images of specific tissues, such as blood vessels on the surface of mucous membranes, known as narrow-band imaging. Alternatively, special light observation may be performed using fluorescence observation, in which images are obtained using fluorescence generated by irradiating excitation light. Fluorescence observation can involve irradiating excitation light onto body tissues and observing the fluorescence from the tissues (autofluorescence observation), or locally injecting a reagent such as indocyanine green (ICG) into the body tissue and irradiating the tissue with excitation light corresponding to the fluorescent wavelength of the reagent to obtain a fluorescent image. The light source device 11203 may be configured to supply narrow-band light and / or excitation light corresponding to such special light observation.

[0175] FIG. 40 is a block diagram showing an example of the functional configuration of the camera head 11102 and the CCU 11201 shown in FIG.

[0176] The camera head 11102 has a lens unit 11401, an imaging unit 11402, a drive unit 11403, a communication unit 11404, and a camera head control unit 11405. The CCU 11201 has a communication unit 11411, an image processing unit 11412, and a control unit 11413. The camera head 11102 and the CCU 11201 are connected to each other by a transmission cable 11400 so that they can communicate with each other.

[0177] The lens unit 11401 is an optical system provided at the connection point with the lens barrel 11101. Observation light taken in from the tip of the lens barrel 11101 is guided to the camera head 11102 and enters the lens unit 11401. The lens unit 11401 is composed of a combination of multiple lenses including a zoom lens and a focus lens.

[0178] The imaging unit 11402 may include one imaging element (a so-called single-chip type) or multiple imaging elements (a so-called multi-chip type). When the imaging unit 11402 is configured as a multi-chip type, for example, each imaging element may generate an image signal corresponding to each of RGB, and a color image may be obtained by combining these signals. Alternatively, the imaging unit 11402 may be configured to have a pair of imaging elements for acquiring image signals for the right eye and the left eye corresponding to 3D (dimensional) display. 3D display allows the surgeon 11131 to more accurately grasp the depth of the biological tissue at the surgical site. Note that when the imaging unit 11402 is configured as a multi-chip type, multiple lens units 11401 may be provided corresponding to each imaging element.

[0179] Furthermore, the imaging unit 11402 does not necessarily have to be provided in the camera head 11102. For example, the imaging unit 11402 may be provided inside the lens barrel 11101, immediately after the objective lens.

[0180] The driving unit 11403 is configured by an actuator, and moves the zoom lens and focus lens of the lens unit 11401 by a predetermined distance along the optical axis under the control of the camera head control unit 11405. This allows the magnification and focus of the image captured by the imaging unit 11402 to be adjusted appropriately.

[0181] The communication unit 11404 is configured by a communication device for transmitting and receiving various types of information to and from the CCU 11201. The communication unit 11404 transmits the image signal obtained from the imaging unit 11402 to the CCU 11201 via the transmission cable 11400 as RAW data.

[0182] Furthermore, the communication unit 11404 receives a control signal for controlling the driving of the camera head 11102 from the CCU 11201 and supplies the control signal to the camera head control unit 11405. The control signal includes information on the imaging conditions, such as information specifying the frame rate of the captured image, information specifying the exposure value at the time of imaging, and / or information specifying the magnification and focus of the captured image.

[0183] The image capturing conditions such as the frame rate, exposure value, magnification, and focus may be appropriately specified by the user, or may be automatically set by the control unit 11413 of the CCU 11201 based on the acquired image signal. In the latter case, the endoscope 11100 is equipped with so-called AE (Auto Exposure) function, AF (Auto Focus) function, and AWB (Auto White Balance) function.

[0184] The camera head control unit 11405 controls the driving of the camera head 11102 based on a control signal received from the CCU 11201 via the communication unit 11404 .

[0185] The communication unit 11411 is configured by a communication device for transmitting and receiving various information to and from the camera head 11102. The communication unit 11411 receives an image signal transmitted from the camera head 11102 via the transmission cable 11400.

[0186] Furthermore, the communication unit 11411 transmits to the camera head 11102 a control signal for controlling the driving of the camera head 11102. The image signal and the control signal can be transmitted by electrical communication, optical communication, or the like.

[0187] The image processing unit 11412 performs various image processing operations on the image signal, which is RAW data sent from the camera head 11102 .

[0188] The control unit 11413 performs various controls related to the imaging of the surgical site, etc. by the endoscope 11100 and the display of the captured image obtained by imaging the surgical site, etc. For example, the control unit 11413 generates a control signal for controlling the driving of the camera head 11102.

[0189] Furthermore, the control unit 11413 causes the display device 11202 to display a captured image showing the surgical site, etc., based on the image signal that has been image processed by the image processing unit 11412. At this time, the control unit 11413 may recognize various objects in the captured image using various image recognition technologies. For example, the control unit 11413 can recognize surgical tools such as forceps, specific biological parts, bleeding, mist generated when using the energy treatment tool 11112, etc., by detecting the shape and color of the edges of objects included in the captured image. When displaying the captured image on the display device 11202, the control unit 11413 may use the recognition results to superimpose various surgical support information on the image of the surgical site. By superimposing the surgical support information and presenting it to the surgeon 11131, the burden on the surgeon 11131 can be reduced and the surgeon 11131 can proceed with the surgery reliably.

[0190] The transmission cable 11400 connecting the camera head 11102 and the CCU 11201 is an electrical signal cable for communication of electrical signals, an optical fiber for optical communication, or a composite cable of these.

[0191] In the illustrated example, communication is performed by wire using the transmission cable 11400, but communication between the camera head 11102 and the CCU 11201 may also be performed wirelessly.

[0192] The above describes an example of an endoscopic surgery system to which the technology according to the present disclosure can be applied. Of the above-described configurations, the technology according to the present disclosure can be applied to, for example, the imaging unit 11402 of the camera head 11102. By applying the technology according to the present disclosure to the imaging unit 11402, clearer images of the surgical site can be obtained, improving the surgeon's visibility of the surgical site.

[0193] Although an endoscopic surgery system has been described as an example here, the technology disclosed herein may also be applied to other systems, such as a microsurgery system.

[0194] <15. Mobile Application Examples> The technology according to the present disclosure (the present technology) can be applied to various products. For example, the technology according to the present disclosure may be realized as a device mounted on any type of moving body, such as an automobile, an electric vehicle, a hybrid electric vehicle, a motorcycle, a bicycle, personal mobility, an airplane, a drone, a ship, or a robot.

[0195] FIG. 41 is a block diagram showing a schematic configuration example of a vehicle control system, which is an example of a mobile object control system to which the technology according to the present disclosure can be applied.

[0196] The vehicle control system 12000 includes a plurality of electronic control units connected via a communication network 12001. In the example shown in Fig. 35, the vehicle control system 12000 includes a drive system control unit 12010, a body system control unit 12020, an outside-vehicle information detection unit 12030, an inside-vehicle information detection unit 12040, and an integrated control unit 12050. Also shown as functional components of the integrated control unit 12050 are a microcomputer 12051, an audio / video output unit 12052, and an in-vehicle network I / F (Interface) 12053.

[0197] The drivetrain control unit 12010 controls the operation of devices related to the drivetrain of the vehicle in accordance with various programs. For example, the drivetrain control unit 12010 functions as a control device for a drive force generating device for generating a drive force of the vehicle, such as an internal combustion engine or a drive motor, a drive force transmission mechanism for transmitting the drive force to the wheels, a steering mechanism for adjusting the steering angle of the vehicle, a braking device for generating a braking force of the vehicle, etc.

[0198] The body system control unit 12020 controls the operation of various devices equipped in the vehicle body according to various programs. For example, the body system control unit 12020 functions as a control device for a keyless entry system, a smart key system, a power window device, or various lamps such as headlamps, backup lamps, brake lamps, turn signals, and fog lamps. In this case, radio waves transmitted from a portable device that serves as a key or signals from various switches may be input to the body system control unit 12020. The body system control unit 12020 receives these radio waves or signals and controls the vehicle's door lock device, power window device, lamps, etc.

[0199] The outside-vehicle information detection unit 12030 detects information outside the vehicle equipped with the vehicle control system 12000. For example, an imaging unit 12031 is connected to the outside-vehicle information detection unit 12030. The outside-vehicle information detection unit 12030 causes the imaging unit 12031 to capture images outside the vehicle and receives the captured images. The outside-vehicle information detection unit 12030 may perform object detection processing or distance detection processing for people, cars, obstacles, signs, characters on the road surface, etc., based on the received images.

[0200] The imaging unit 12031 is an optical sensor that receives light and outputs an electrical signal according to the amount of light received. The imaging unit 12031 can output the electrical signal as an image, or as distance measurement information. The light received by the imaging unit 12031 may be visible light or invisible light such as infrared light.

[0201] The in-vehicle information detection unit 12040 detects information inside the vehicle. For example, a driver state detection unit 12041 that detects the state of the driver is connected to the in-vehicle information detection unit 12040. The driver state detection unit 12041 includes, for example, a camera that captures an image of the driver, and the in-vehicle information detection unit 12040 may calculate the degree of fatigue or concentration of the driver based on the detection information input from the driver state detection unit 12041, or may determine whether the driver is dozing off.

[0202] The microcomputer 12051 can calculate control target values ​​for the driving force generating device, steering mechanism, or braking device based on the information inside and outside the vehicle acquired by the outside-vehicle information detection unit 12030 or the inside-vehicle information detection unit 12040, and output control commands to the drivetrain control unit 12010. For example, the microcomputer 12051 can perform cooperative control aimed at realizing the functions of an ADAS (Advanced Driver Assistance System), including avoiding or mitigating collisions between vehicles, following based on the distance between vehicles, maintaining vehicle speed, warning of vehicle collisions, or warning of vehicle lane departure.

[0203] In addition, the microcomputer 12051 can perform cooperative control for the purpose of autonomous driving, which allows the vehicle to travel autonomously without relying on driver operation, by controlling the driving force generating device, steering mechanism, braking device, etc. based on information about the surroundings of the vehicle obtained by the outside vehicle information detection unit 12030 or the inside vehicle information detection unit 12040.

[0204] Furthermore, the microcomputer 12051 can output a control command to the body system control unit 12030 based on the information about the outside of the vehicle acquired by the outside information detection unit 12030. For example, the microcomputer 12051 can control the headlamps according to the position of a preceding vehicle or an oncoming vehicle detected by the outside information detection unit 12030, and perform cooperative control for the purpose of preventing glare, such as switching from high beams to low beams.

[0205] The audio / video output unit 12052 transmits at least one of audio and video output signals to an output device capable of visually or audibly notifying information to passengers in the vehicle or to the outside of the vehicle. In the example of Fig. 41, the output devices are exemplified by an audio speaker 12061, a display unit 12062, and an instrument panel 12063. The display unit 12062 may include, for example, at least one of an on-board display and a head-up display.

[0206] FIG. 42 is a diagram showing an example of the installation position of the imaging unit 12031.

[0207] In FIG. 42, the imaging unit 12031 includes imaging units 12101, 12102, 12103, 12104, and 12105.

[0208] The imaging units 12101, 12102, 12103, 12104, and 12105 are provided, for example, at positions such as the front nose, side mirrors, rear bumper, back door, and the top of the windshield inside the vehicle cabin of the vehicle 12100. The imaging unit 12101 provided at the front nose and the imaging unit 12105 provided at the top of the windshield inside the vehicle cabin mainly acquire images of the front of the vehicle 12100. The imaging units 12102 and 12103 provided at the side mirrors mainly acquire images of the sides of the vehicle 12100. The imaging unit 12104 provided at the rear bumper or back door mainly acquires images of the rear of the vehicle 12100. The imaging unit 12105 provided at the top of the windshield inside the vehicle cabin is mainly used to detect preceding vehicles, pedestrians, obstacles, traffic lights, traffic signs, lanes, etc.

[0209] 42 shows an example of the imaging ranges of the imaging units 12101 to 12104. Imaging range 12111 indicates the imaging range of the imaging unit 12101 provided on the front nose, imaging ranges 12112 and 12113 indicate the imaging ranges of the imaging units 12102 and 12103 provided on the side mirrors, respectively, and imaging range 12114 indicates the imaging range of the imaging unit 12104 provided on the rear bumper or back door. For example, by overlaying the image data captured by the imaging units 12101 to 12104, a bird's-eye view image of the vehicle 12100 viewed from above can be obtained.

[0210] At least one of the imaging units 12101 to 12104 may have a function of acquiring distance information. For example, at least one of the imaging units 12101 to 12104 may be a stereo camera made up of multiple imaging elements, or may be an imaging element having pixels for phase difference detection.

[0211] For example, the microcomputer 12051 can calculate the distance to each three-dimensional object within the imaging ranges 12111 to 12114 and the change in this distance over time (relative speed with respect to the vehicle 12100) based on the distance information obtained from the imaging units 12101 to 12104, thereby extracting as a preceding vehicle, in particular, the three-dimensional object that is the closest three-dimensional object on the path of the vehicle 12100 and traveling in approximately the same direction as the vehicle 12100 at a predetermined speed (for example, 0 km / h or higher). Furthermore, the microcomputer 12051 can set a vehicle-to-vehicle distance to be maintained in advance in front of the preceding vehicle, and perform automatic braking control (including follow-up stop control), automatic acceleration control (including follow-up start control), etc. In this way, cooperative control can be performed for the purpose of automatic driving, which runs autonomously without relying on driver operation.

[0212] For example, the microcomputer 12051 classifies and extracts three-dimensional object data regarding three-dimensional objects into two-wheeled vehicles, ordinary vehicles, large vehicles, pedestrians, utility poles, and other three-dimensional objects based on distance information obtained from the imaging units 12101 to 12104, and can use the data for automatic obstacle avoidance. For example, the microcomputer 12051 distinguishes obstacles around the vehicle 12100 into obstacles that are visible to the driver of the vehicle 12100 and obstacles that are difficult to see. The microcomputer 12051 then determines the collision risk, which indicates the degree of risk of collision with each obstacle, and when the collision risk is equal to or greater than a set value and a collision is possible, the microcomputer 12051 can provide driving assistance for collision avoidance by outputting an alarm to the driver via the audio speaker 12061 or the display unit 12062, or by performing forced deceleration or avoidance steering via the drivetrain control unit 12010.

[0213] At least one of the image capturing units 12101 to 12104 may be an infrared camera that detects infrared rays. For example, the microcomputer 12051 can recognize a pedestrian by determining whether or not a pedestrian is present in the images captured by the image capturing units 12101 to 12104. The pedestrian recognition is performed, for example, by extracting feature points from the images captured by the image capturing units 12101 to 12104, which are infrared cameras, and then performing pattern matching on a series of feature points that indicate the outline of an object to determine whether or not the object is a pedestrian. When the microcomputer 12051 determines that a pedestrian is present in the images captured by the image capturing units 12101 to 12104 and recognizes the pedestrian, the audio / image output unit 12052 controls the display unit 12062 to superimpose a rectangular outline on the recognized pedestrian for emphasis. The audio / image output unit 12052 may also control the display unit 12062 to display an icon or the like indicating the pedestrian at a desired position.

[0214] An example of a vehicle control system to which the technology according to the present disclosure can be applied has been described above. Of the configurations described above, the technology according to the present disclosure can be applied to, for example, the image capturing unit 12031. By applying the technology according to the present disclosure to the image capturing unit 12031, it is possible to obtain a captured image that is easier to see, thereby reducing driver fatigue.

[0215] <16. Other variations> Although the present disclosure has been described above by giving several embodiments and modifications thereof, as well as examples of their applications or applications (hereinafter referred to as "embodiments, etc."), the present disclosure is not limited to the above-described embodiments, etc., and various modifications are possible. For example, the present disclosure is not limited to back-illuminated image sensors, but can also be applied to front-illuminated image sensors.

[0216] The imaging device according to the present disclosure may be in the form of a module in which the imaging section and the signal processing section or the optical system are packaged together.

[0217] Furthermore, in the above-described embodiments, a solid-state imaging device that converts the amount of incident light focused on an imaging surface via an optical lens system into an electrical signal on a pixel-by-pixel basis and outputs the signal as a pixel signal, and an imaging element mounted thereon, have been described as examples. However, the photoelectric conversion element of the present disclosure is not limited to such an imaging element. For example, it may be an imaging element that detects and receives light from a subject, generates and accumulates electric charges according to the amount of received light through photoelectric conversion, and stores the electric charges. The output signal may be a signal of image information or a signal of ranging information.

[0218] Furthermore, in the above-described embodiments, the photoelectric conversion unit 10 as the second photoelectric conversion unit is an iTOF sensor, but the present disclosure is not limited to this. That is, the second photoelectric conversion unit is not limited to one that detects light having a wavelength in the infrared light range, and may be one that detects light with wavelengths in other wavelength ranges. Furthermore, if the photoelectric conversion unit 10 is not an iTOF sensor, only one transfer transistor (TG) may be provided.

[0219] Furthermore, in the above-described embodiments, an imaging element in which a photoelectric conversion element of the present disclosure is formed by stacking a photoelectric conversion unit 10 including a photoelectric conversion region 12 and an organic photoelectric conversion unit 20 including an organic photoelectric conversion layer 22 with an intermediate layer 40 sandwiched therebetween is described, but the present disclosure is not limited thereto. For example, the photoelectric conversion element of the present disclosure may have a structure in which two organic photoelectric conversion regions are stacked, or a structure in which two inorganic photoelectric conversion regions are stacked. Furthermore, in the above-described embodiments, the photoelectric conversion unit 10 detects and performs photoelectric conversion primarily in the infrared wavelength range, and the organic photoelectric conversion unit 20 detects and performs photoelectric conversion primarily in the visible wavelength range, but the photoelectric conversion element of the present disclosure is not limited thereto. In the photoelectric conversion element of the present disclosure, the wavelength ranges to which the first photoelectric conversion unit and the second photoelectric conversion unit are sensitive can be arbitrarily set.

[0220] Furthermore, the constituent materials of each component of the photoelectric conversion element of the present disclosure are not limited to the materials listed in the above embodiments, etc. For example, when the first photoelectric conversion unit or the second photoelectric conversion unit receives light in the visible light region and performs photoelectric conversion, the first photoelectric conversion unit or the second photoelectric conversion unit may contain quantum dots.

[0221] Furthermore, in the above-described fifth embodiment, the inter-pixel region light-shielding film 56 is provided between the organic photoelectric conversion unit 20 and the on-chip lens 54 in the Z-axis direction. However, the inter-pixel region light-shielding film 56 may also be provided in the above-described respective embodiments and modified examples other than the fifth embodiment.

[0222] Furthermore, in the above-described embodiments, a case has been described in which a pair of gate electrodes and a pair of charge retention units that accumulate charges arriving from the second photoelectric conversion layer via the pair of gate electrodes, respectively, have been provided for each second photoelectric conversion layer, but the present disclosure is not limited to this. A single gate electrode and a single charge retention unit may be provided for each second photoelectric conversion layer. Alternatively, three or more gate electrodes and three or more charge retention units may be provided for each second photoelectric conversion layer. Furthermore, in the present disclosure, the transistor that reads out charges from the second photoelectric conversion layer is not limited to a so-called vertical transistor, but may also be a planar transistor.

[0223] According to the photoelectric conversion element as an embodiment of the present disclosure, the above configuration makes it possible to acquire, for example, high-quality visible light image information and infrared light image information including distance information. It should be noted that the effects described in this specification are merely examples and are not limited to those described, and other effects may also be achieved. Furthermore, the present technology may have the following configurations. (1) a semiconductor substrate; a first photoelectric conversion unit provided on the semiconductor substrate, which detects light in a first wavelength range including a visible light range and performs photoelectric conversion; a second photoelectric conversion unit that is provided in the semiconductor substrate at a position that overlaps with the first photoelectric conversion unit in a thickness direction of the semiconductor substrate, and that detects light in a second wavelength range that includes an infrared light range and performs photoelectric conversion; an optical filter provided on the opposite side of the first photoelectric conversion unit from the second photoelectric conversion unit, the optical filter transmitting light of a predetermined color component included in a predetermined wavelength range; and The first photoelectric conversion unit includes a laminated structure in which a first electrode, a first photoelectric conversion layer, and a second electrode are laminated in this order, and a charge storage electrode that is disposed apart from the first electrode and faces the first photoelectric conversion layer via an insulating layer. Photoelectric conversion element. (2) The second photoelectric conversion unit is capable of acquiring distance information of an object. The photoelectric conversion element according to (1) above. (3) The second photoelectric conversion unit includes a second photoelectric conversion layer, a pair of gate electrodes, and a pair of charge retention units that accumulate charges that arrive from the second photoelectric conversion layer via the pair of gate electrodes, respectively. The photoelectric conversion element according to (1) or (2) above. (4) A plurality of the charge storage electrodes are provided corresponding to one of the second photoelectric conversion units. The photoelectric conversion element according to any one of (1) to (3) above. (5) one optical filter is provided corresponding to one second photoelectric conversion unit, One of the first photoelectric conversion units is provided corresponding to one of the second photoelectric conversion units. The photoelectric conversion element according to (4) above. (6) A plurality of the charge storage electrodes are provided corresponding to one of the first photoelectric conversion units. The photoelectric conversion element according to any one of (1) to (5) above. (7) The inter-pixel region light-shielding film further includes a plurality of openings at positions corresponding to the second photoelectric conversion unit, and is located on the incident side of the second photoelectric conversion unit. The photoelectric conversion element according to any one of (1) to (6) above. (8) The semiconductor device further includes a through electrode for extracting the charges stored in the charge storage electrode on the side opposite to the second photoelectric conversion unit when viewed from the first photoelectric conversion unit. The photoelectric conversion element according to any one of (1) to (7) above. (9) The through electrode further includes a metal layer surrounding the through electrode via an insulating layer. The photoelectric conversion element according to (8) above. (10) the semiconductor substrate includes a first surface facing the first photoelectric conversion unit and a second surface opposite to the first surface; At least one of the first surface and the second surface has an uneven structure formed thereon. The photoelectric conversion element according to any one of (1) to (9) above. (11) The stacked structure of the first photoelectric conversion layer further includes a semiconductor layer provided between the first electrode and the first photoelectric conversion layer. The photoelectric conversion element according to any one of (1) to (10) above. (12) A plurality of photoelectric conversion elements are provided, The photoelectric conversion element is a semiconductor substrate; a first photoelectric conversion unit provided on the semiconductor substrate, which detects light in a first wavelength range including a visible light range and performs photoelectric conversion; a second photoelectric conversion unit that is provided in the semiconductor substrate at a position that overlaps with the first photoelectric conversion unit in a thickness direction of the semiconductor substrate, and that detects light in a second wavelength range that includes an infrared light range and performs photoelectric conversion; an optical filter provided on the opposite side of the first photoelectric conversion unit from the second photoelectric conversion unit, the optical filter transmitting light of a predetermined color component included in a predetermined wavelength range; and The first photoelectric conversion unit includes a laminated structure in which a first electrode, a first photoelectric conversion layer, and a second electrode are laminated in this order, and a charge storage electrode that is disposed apart from the first electrode and faces the first photoelectric conversion layer via an insulating layer. Light detection device. (13) The photoelectric conversion element further includes a light-shielding film located between the first photoelectric conversion unit and the second photoelectric conversion unit and provided in a region between adjacent photoelectric conversion elements. The photodetector according to (12) above. (14) a light emitting device that emits infrared light; a photodetector having a photoelectric conversion element; Equipped with The photoelectric conversion element is a semiconductor substrate; a first photoelectric conversion unit provided on the semiconductor substrate, the first photoelectric conversion unit detecting external visible light and performing photoelectric conversion; a second photoelectric conversion unit provided in the semiconductor substrate at a position overlapping the first photoelectric conversion unit in a thickness direction of the semiconductor substrate, the second photoelectric conversion unit detecting the infrared light from the light emitting device and performing photoelectric conversion; an optical filter provided on the opposite side of the first photoelectric conversion unit from the second photoelectric conversion unit, the optical filter transmitting light of a predetermined color component included in a predetermined wavelength range; and The first photoelectric conversion unit includes a laminated structure in which a first electrode, a first photoelectric conversion layer, and a second electrode are laminated in this order, and a charge storage electrode that is disposed apart from the first electrode and faces the first photoelectric conversion layer via an insulating layer. Optical detection system. (15) The optical unit includes an optical signal processor and a photoelectric conversion element. The photoelectric conversion element is a semiconductor substrate; a first photoelectric conversion unit provided on the semiconductor substrate, which detects light in a first wavelength range including a visible light range and performs photoelectric conversion; a second photoelectric conversion unit that is provided in the semiconductor substrate at a position that overlaps with the first photoelectric conversion unit in a thickness direction of the semiconductor substrate, and that detects light in a second wavelength range that includes an infrared light range and performs photoelectric conversion; an optical filter provided on the opposite side of the first photoelectric conversion unit from the second photoelectric conversion unit, the optical filter transmitting light of a predetermined color component included in a predetermined wavelength range; and The first photoelectric conversion unit includes a laminated structure in which a first electrode, a first photoelectric conversion layer, and a second electrode are laminated in this order, and a charge storage electrode that is disposed apart from the first electrode and faces the first photoelectric conversion layer via an insulating layer. electronic equipment. (16) a light emitting device that emits a first light in the visible light range and a second light in the infrared light range; a photodetection system having a photodetector including a photoelectric conversion element; The photoelectric conversion element is a semiconductor substrate; a first photoelectric conversion unit provided on the semiconductor substrate, which detects light in a first wavelength range including the first light and performs photoelectric conversion; a second photoelectric conversion unit that is provided in the semiconductor substrate at a position that overlaps with the first photoelectric conversion unit in a thickness direction of the semiconductor substrate, and that detects light in a second wavelength range that includes the second light and performs photoelectric conversion; an optical filter provided on the opposite side of the first photoelectric conversion unit from the second photoelectric conversion unit, the optical filter transmitting light of a predetermined color component included in a predetermined wavelength range; and The first photoelectric conversion unit includes a laminated structure in which a first electrode, a first photoelectric conversion layer, and a second electrode are laminated in this order, and a charge storage electrode that is disposed apart from the first electrode and faces the first photoelectric conversion layer via an insulating layer. Mobile object. (17) a semiconductor substrate; a first photoelectric conversion unit provided on the semiconductor substrate, having a stacked structure in which a first electrode, a first photoelectric conversion layer, and a second electrode are stacked in this order from the semiconductor substrate side, and detecting light in a first wavelength range and performing photoelectric conversion; a second photoelectric conversion unit that is provided in the semiconductor substrate at a position that overlaps with the first photoelectric conversion unit in a thickness direction of the semiconductor substrate, and that detects light in a second wavelength range and performs photoelectric conversion; a through electrode electrically connected to the first electrode, which extracts charges generated in the first photoelectric conversion layer to the opposite side of the semiconductor substrate as viewed from the first photoelectric conversion unit; a metal layer surrounding the through electrode via an insulating layer; A photoelectric conversion element having the above structure. (18) The metal layer is provided so as to surround the second photoelectric conversion unit in a plane perpendicular to the stacking direction of the stacked structure. The photoelectric conversion element according to (17) above. (19) a light emitting device that emits a first light in the visible light range and a second light in the infrared light range; a photodetection system having a photodetector including a photoelectric conversion element; The photoelectric conversion element is a semiconductor substrate; a first photoelectric conversion unit provided on the semiconductor substrate, which detects light in a first wavelength range including the first light and performs photoelectric conversion; a second photoelectric conversion unit that is provided in the semiconductor substrate at a position that overlaps with the first photoelectric conversion unit in a thickness direction of the semiconductor substrate, and that detects light in a second wavelength range that includes the second light and performs photoelectric conversion; an optical filter provided on the opposite side of the first photoelectric conversion unit from the second photoelectric conversion unit, the optical filter transmitting light of a predetermined color component included in a predetermined wavelength range; and The first photoelectric conversion unit includes a laminated structure in which a first electrode, a first photoelectric conversion layer, and a second electrode are laminated in this order, and a charge storage electrode that is disposed apart from the first electrode and faces the first photoelectric conversion layer via an insulating layer. electronic equipment. (20) The optical unit includes an optical signal processor and a photoelectric conversion element. The photoelectric conversion element is a semiconductor substrate; a first photoelectric conversion unit provided on the semiconductor substrate, having a stacked structure in which a first electrode, a first photoelectric conversion layer, and a second electrode are stacked in this order from the semiconductor substrate side, and detecting light in a first wavelength range and performing photoelectric conversion; a second photoelectric conversion unit that is provided in the semiconductor substrate at a position that overlaps with the first photoelectric conversion unit in a thickness direction of the semiconductor substrate, and that detects light in a second wavelength range and performs photoelectric conversion; a through electrode electrically connected to the first electrode, which extracts charges generated in the first photoelectric conversion layer to the opposite side of the semiconductor substrate as viewed from the first photoelectric conversion unit; a metal layer surrounding the through electrode via an insulating layer; have electronic equipment.

[0224] This application claims priority to U.S. Provisional Application No. 62 / 864,907, filed June 21, 2019, in the U.S. Patent and Trademark Office, the entire contents of which are incorporated herein by reference.

[0225] Those skilled in the art will recognize that various modifications, combinations, subcombinations, and variations may occur depending on design requirements and other factors, and are intended to be within the scope of the appended claims and their equivalents.

Claims

1. a semiconductor substrate; a first photoelectric conversion unit provided on the semiconductor substrate, which detects light in a first wavelength range including a visible light range and performs photoelectric conversion; a plurality of optical filters provided on the side of the first photoelectric conversion unit opposite to the semiconductor substrate, the optical filters transmitting light of a predetermined color component included in a predetermined wavelength range; and the first photoelectric conversion unit includes at least a stacked structure in which a first electrode, a first photoelectric conversion layer, and a second electrode are stacked in this order, and a plurality of charge storage electrodes that are arranged spaced apart from the first electrode and opposed to the first photoelectric conversion layer via an insulating layer; The plurality of optical filters are provided at positions corresponding to the plurality of charge storage electrodes, respectively. Light detection device.

2. The semiconductor device further includes a second photoelectric conversion unit that is provided in the semiconductor substrate and detects light in a second wavelength range including an infrared light range and performs photoelectric conversion. The photodetector device according to claim 1 .

3. The second photoelectric conversion unit is capable of acquiring distance information of an object.

3. The photodetector according to claim 2.

4. The second photoelectric conversion unit includes a photoelectric conversion region, a pair of gate electrodes, and a pair of charge retention units that accumulate charges that arrive from the second photoelectric conversion layer via the pair of gate electrodes, respectively.

3. The photodetector according to claim 2.

5. a light-shielding film including an opening at a position corresponding to the second photoelectric conversion unit, on the incident side of the second photoelectric conversion unit; 3. The photodetector according to claim 2.

6. the semiconductor substrate includes a first surface facing the first photoelectric conversion unit and a second surface opposite to the first surface; The semiconductor device further includes a through electrode that extracts charges generated in the first photoelectric conversion portion to the second surface.

2. The optical detection device according to claim 1.

7. The through electrode further includes a metal layer surrounding the through electrode via an insulating layer.

7. The photodetector according to claim 6.

8. the semiconductor substrate includes a first surface facing the first photoelectric conversion unit and a second surface opposite to the first surface; At least one of the first surface and the second surface has a concave-convex structure formed thereon.

2. The optical detection device according to claim 1.

9. The stacked structure in the first photoelectric conversion unit further includes a semiconductor layer provided between the first electrode and the first photoelectric conversion layer.

2. The optical detection device according to claim 1.

10. The second photoelectric conversion unit further includes a light-shielding wall provided to surround the photoelectric conversion region.

5. The photodetector according to claim 4.

11. a light emitting device that emits infrared light; Photodetector and Equipped with The photodetector device a semiconductor substrate; a first photoelectric conversion unit provided on the semiconductor substrate, the first photoelectric conversion unit detecting external visible light and performing photoelectric conversion; a second photoelectric conversion unit provided in the semiconductor substrate at a position overlapping the first photoelectric conversion unit in a thickness direction of the semiconductor substrate, the second photoelectric conversion unit detecting the infrared light from the light emitting device and performing photoelectric conversion; a plurality of optical filters provided on the side of the first photoelectric conversion unit opposite to the semiconductor substrate, the optical filters transmitting light of a predetermined color component included in a predetermined wavelength range; and the first photoelectric conversion unit includes at least a stacked structure in which a first electrode, a first photoelectric conversion layer, and a second electrode are stacked in this order, and a plurality of charge storage electrodes that are arranged spaced apart from the first electrode and opposed to the first photoelectric conversion layer via an insulating layer; The plurality of optical filters are provided at positions corresponding to the plurality of charge storage electrodes, respectively. Optical detection system.

12. In a plan view, each of the plurality of optical filters overlaps the second photoelectric conversion unit. The photodetector device according to claim 2 .

13. In a plan view, each of the plurality of charge storage electrodes overlaps with the second photoelectric conversion unit. The photodetector device according to claim 2 .

14. The arrangement of the plurality of optical filters is a Bayer arrangement. The photodetector device according to claim 1 .

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