Electrostatic chuck and plasma processing apparatus

Abstract

The occurrence of abnormal discharge in a through hole of an electrostatic chuck is prevented or reduced. [Solution] A plasma processing apparatus comprising: a plasma processing chamber; a base disposed within the plasma processing chamber; and an electrostatic chuck disposed on top of the base, wherein the electrostatic chuck includes a dielectric member having a substrate support surface and a ring support surface; an attraction electrode disposed within the dielectric member; a bias electrode disposed within the dielectric member and below the attraction electrode; and at least one conductive member disposed at least partially within the dielectric member, wherein the dielectric member has a through hole extending from the substrate support surface or the ring support surface to a lower surface of the dielectric member, and the at least one conductive member is disposed around the through hole and extends upward from the same height as the bias electrode or from a position higher than the bias electrode.

Description

[Technical Field]

[0001] The present disclosure relates to a plasma processing apparatus and an electrostatic chuck. [Background technology]

[0002] Patent Document 1 discloses a plasma processing apparatus including a plasma processing chamber and a substrate support disposed within the plasma processing chamber. The substrate support includes a base and an electrostatic chuck. The electrostatic chuck has through-holes for supplying a heat transfer gas to a space between the back surface of the substrate and the front surface of the electrostatic chuck, and through-holes for receiving lifter pins for raising and lowering the substrate. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Patent Publication No. 2021-28958 Summary of the Invention [Problem to be solved by the invention]

[0004] The technology according to the present disclosure prevents or reduces the occurrence of abnormal discharge in the through-hole of the electrostatic chuck. [Means for solving the problem]

[0005] One aspect of the present disclosure is a plasma processing apparatus comprising: a plasma processing chamber; a base disposed within the plasma processing chamber; and an electrostatic chuck disposed on the base, wherein the electrostatic chuck includes a dielectric member having a substrate support surface and a ring support surface; an attraction electrode disposed within the dielectric member; a bias electrode disposed within the dielectric member and below the attraction electrode; and at least one conductive member disposed at least partially within the dielectric member, wherein the dielectric member has a through hole extending from the substrate support surface or the ring support surface to a lower surface of the dielectric member, and the at least one conductive member is disposed around the through hole and extends upward from a position at the same height as the bias electrode or higher than the bias electrode. [Effects of the Invention]

[0006] According to the present disclosure, it is possible to prevent or reduce the occurrence of abnormal discharge in the through-hole of the electrostatic chuck. [Brief explanation of the drawings]

[0007] [Figure 1] FIG. 1 is a diagram illustrating an example of the configuration of a plasma processing system. [Figure 2] FIG. 1 is a diagram illustrating an example of the configuration of a capacitively coupled plasma processing apparatus. [Figure 3] 10 is a cross-sectional view for explaining an outline of a configuration example of a substrate support portion. FIG. [Figure 4] FIG. 10 is a top view for explaining an outline of a configuration example of a substrate support portion. [Figure 5A] FIG. 2 is a cross-sectional view illustrating a conductive member according to the first embodiment. [Figure 5B] FIG. 2 is a top view illustrating the conductive member of the first embodiment. [Figure 6A] 10A and 10B are top views for explaining examples of the shape of the conductive member. [Figure 6B] 10A and 10B are top views for explaining examples of the shape of the conductive member. [Figure 6C] 10A and 10B are top views for explaining examples of the shape of the conductive member. [Figure 6D]10A and 10B are top views for explaining examples of the shape of the conductive member. [Figure 6E] 10A and 10B are top views for explaining examples of the shape of the conductive member. [Figure 7A] 10A and 10B are cross-sectional views illustrating examples of the shape of a conductive member. [Figure 7B] 10A and 10B are cross-sectional views illustrating examples of the shape of a conductive member. [Figure 7C] 10A and 10B are cross-sectional views illustrating examples of the shape of a conductive member. [Figure 8] FIG. 6 is a cross-sectional view illustrating a conductive member according to a second embodiment. [Figure 9] FIG. 10 is a cross-sectional view illustrating a conductive member according to a third embodiment. [Figure 10] FIG. 10 is a cross-sectional view illustrating a conductive member according to a fourth embodiment. [Figure 11] FIG. 10 is a cross-sectional view illustrating a conductive member according to a fifth embodiment. [Figure 12] FIG. 10 is a cross-sectional view illustrating a conductive member according to a sixth embodiment. [Figure 13A] FIG. 13 is a cross-sectional view illustrating a conductive member according to a seventh embodiment. [Figure 13B] FIG. 13 is a cross-sectional view illustrating a conductive member according to a seventh embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0008] An electrostatic chuck and a plasma processing apparatus according to the present embodiment will be described with reference to the drawings. In this specification and the drawings, elements having substantially the same functional configurations are designated by the same reference numerals, and redundant description will be omitted.

[0009] <Plasma processing system> First, a plasma processing system according to one embodiment will be described with reference to Fig. 1. Fig. 1 is a diagram for explaining an example of the configuration of the plasma processing system.

[0010] In one embodiment, the plasma processing system includes a plasma processing device 1 and a controller 2. The plasma processing system is an example of a substrate processing system, and the plasma processing device 1 is an example of a substrate processing device. The plasma processing device 1 includes a plasma processing chamber 10, a substrate support 11, and a plasma generation unit 12. The plasma processing chamber 10 has a plasma processing space. The plasma processing chamber 10 also has at least one gas supply port for supplying at least one processing gas to the plasma processing space and at least one gas exhaust port for exhausting gas from the plasma processing space. The gas supply port is connected to a gas supply unit 20 (described later), and the gas exhaust port is connected to an exhaust system 40 (described later). The substrate support 11 is disposed in the plasma processing space and has a substrate support surface for supporting a substrate.

[0011] The plasma generating unit 12 is configured to generate plasma from at least one processing gas supplied into the plasma processing space. The plasma formed in the plasma processing space may be capacitively coupled plasma (CCP), inductively coupled plasma (ICP), electron-cyclotron-resonance plasma (ECR plasma), helicon wave plasma (HWP), or surface wave plasma (SWP). Various types of plasma generating units may be used, including alternating current (AC) plasma generating units and direct current (DC) plasma generating units. In one embodiment, the AC signal (AC power) used in the AC plasma generating unit has a frequency in the range of 100 kHz to 10 GHz. Therefore, the AC signal includes a radio frequency (RF) signal and a microwave signal. In one embodiment, the RF signal has a frequency in the range of 100 kHz to 150 MHz.

[0012] The control unit 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform various processes described in this disclosure. The control unit 2 may be configured to control each element of the plasma processing apparatus 1 to perform various processes described herein. In one embodiment, part or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The control unit 2 may be implemented by, for example, a computer 2a. The processing unit 2a1 may be configured to read a program from the storage unit 2a2 and execute the read program to perform various control operations. The program may be stored in the storage unit 2a2 in advance or may be acquired via a medium when needed. The acquired program is stored in the storage unit 2a2 and read from the storage unit 2a2 by the processing unit 2a1 for execution. The medium may be various storage media readable by the computer 2a or a communication line connected to the communication interface 2a3. The processing unit 2a1 may be a CPU (Central Processing Unit). The storage unit 2a2 may include a random access memory (RAM), a read only memory (ROM), a hard disk drive (HDD), a solid state drive (SSD), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing apparatus 1 via a communication line such as a local area network (LAN).

[0013] Next, a configuration example of a capacitively coupled plasma processing apparatus will be described as an example of the plasma processing apparatus 1. Fig. 2 is a diagram for explaining the configuration example of a capacitively coupled plasma processing apparatus.

[0014] The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply 20, a power supply 30, and an exhaust system 40. The plasma processing apparatus 1 also includes a substrate support 11 and a gas inlet. The gas inlet is configured to introduce at least one process gas into the plasma processing chamber 10. The gas inlet includes a showerhead 13. The substrate support 11 is disposed within the plasma processing chamber 10. The showerhead 13 is disposed above the substrate support 11. In one embodiment, the showerhead 13 forms at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the showerhead 13, a sidewall 10a of the plasma processing chamber 10, and the substrate support 11. The plasma processing chamber 10 is grounded. The showerhead 13 and the substrate support 11 are electrically insulated from the housing of the plasma processing chamber 10.

[0015] The substrate support 11 includes a main body 111 and a ring assembly 112. The main body 111 has a central region 111a for supporting a substrate W and an annular region 111b for supporting the ring assembly 112. A wafer is an example of a substrate W. The annular region 111b of the main body 111 surrounds the central region 111a of the main body 111 in a plan view. The substrate W is disposed on the central region 111a of the main body 111, and the ring assembly 112 is disposed on the annular region 111b of the main body 111 so as to surround the substrate W on the central region 111a of the main body 111. Therefore, the central region 111a is also called a substrate support surface for supporting the substrate W, and the annular region 111b is also called a ring support surface for supporting the ring assembly 112.

[0016] In one embodiment, the main body 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes a conductive member. The conductive member of the base 1110 can function as a lower electrode. The electrostatic chuck 1111 is disposed on the base 1110. The electrostatic chuck 1111 includes a dielectric member 1111a and a first electrode layer 1111b serving as an attraction electrode (also referred to as an electrostatic electrode, a chuck electrode, or a clamp electrode) disposed within the dielectric member 1111a. The dielectric member 1111a is formed of, for example, a ceramic member. The thickness of the first electrode layer is, for example, 10 μm (micrometers) to 300 μm. The dielectric member 1111a has a central region 111a. In one embodiment, the dielectric member 1111a also has an annular region 111b. Note that other members surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck or an annular insulating member, may have the annular region 111b. In this case, the ring assembly 112 may be disposed on the annular electrostatic chuck or the annular insulating member, or may be disposed on both the electrostatic chuck 1111 and the annular insulating member. Furthermore, a second electrode layer (see FIG. 3 described later) serving as at least one RF / DC electrode coupled to an RF power supply 31 and / or a DC power supply 32 described later is disposed within the dielectric member 1111a. The thickness of the second electrode layer is, for example, 10 μm to 300 μm. In this case, the at least one RF / DC electrode functions as a lower electrode. When a bias RF signal and / or a DC signal described later is supplied to the at least one RF / DC electrode, the RF / DC electrode is also referred to as a bias electrode. Note that the conductive member of the base 1110 and at least one RF / DC electrode may function as multiple lower electrodes. Furthermore, the first electrode layer 1111b (the attraction electrode) may function as the lower electrode. The substrate support 11 therefore comprises at least one bottom electrode.

[0017] The ring assembly 112 includes one or more annular members. In one embodiment, the one or more annular members include one or more edge rings and at least one cover ring. The edge rings are formed of a conductive or insulating material, and the cover rings are formed of an insulating material.

[0018] The substrate support 11 may also include a temperature adjustment module configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate to a target temperature. The temperature adjustment module may include a heater, a heat transfer medium, a flow path 1110a, or a combination thereof. A heat transfer fluid such as brine or a gas flows through the flow path 1110a. In one embodiment, the flow path 1110a is formed in the base 1110, and one or more heaters are disposed in the dielectric member 1111a of the electrostatic chuck 1111. The substrate support 11 also includes a heat transfer gas supply configured to supply a heat transfer gas to a gap between the backside of the substrate W and the central region 111a.

[0019] The showerhead 13 is configured to introduce at least one processing gas from the gas supply unit 20 into the plasma processing space 10s. The showerhead 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and multiple gas inlets 13c. The processing gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s from the multiple gas inlets 13c. The showerhead 13 also includes at least one upper electrode. In addition to the showerhead 13, the gas introduction unit may also include one or more side gas injectors (SGIs) attached to one or more openings formed in the sidewall 10a.

[0020] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one process gas from a corresponding gas source 21 to the showerhead 13 via a corresponding flow controller 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Additionally, the gas supply unit 20 may include at least one flow modulation device that modulates or pulses the flow rate of the at least one process gas.

[0021] The power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF power) to at least one lower electrode and / or at least one upper electrode. This generates a plasma from at least one processing gas supplied to the plasma processing space 10s. Therefore, the RF power supply 31 can function as at least a part of the plasma generation unit 12. Furthermore, by supplying a bias RF signal to the at least one lower electrode, a bias potential is generated on the substrate W, and ion components in the formed plasma can be attracted to the substrate W.

[0022] In one embodiment, the RF power supply 31 includes a first RF generating unit 31a and a second RF generating unit 31b. The first RF generating unit 31a is coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matching circuit and is configured to generate a source RF signal (source RF power) for plasma generation. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generating unit 31a may be configured to generate multiple source RF signals having different frequencies. The generated one or more source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0023] The second RF generating unit 31b is coupled to at least one lower electrode via at least one impedance matching circuit and configured to generate a bias RF signal (bias RF power). The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generating unit 31b may be configured to generate multiple bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. In various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0024] The power supply 30 may also include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generator 32a and a second DC generator 32b. In one embodiment, the first DC generator 32a is connected to at least one lower electrode and configured to generate a first DC signal. The generated first DC signal is applied to the at least one lower electrode. In one embodiment, the second DC generator 32b is connected to at least one upper electrode and configured to generate a second DC signal. The generated second DC signal is applied to the at least one upper electrode.

[0025] In various embodiments, the first and second DC signals may be pulsed. In this case, a sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. The voltage pulses may have a rectangular, trapezoidal, triangular, or combination thereof. In one embodiment, a waveform generator for generating a sequence of voltage pulses from the DC signal is connected between the first DC generator 32a and at least one lower electrode. Thus, the first DC generator 32a and the waveform generator constitute a voltage pulse generator. When the second DC generator 32b and the waveform generator constitute a voltage pulse generator, the voltage pulse generator is connected to at least one upper electrode. The voltage pulses may have either positive or negative polarity. Furthermore, the sequence of voltage pulses may include one or more positive voltage pulses and one or more negative voltage pulses within one period. The first and second DC generating units 32a and 32b may be provided in addition to the RF power supply 31, or the first DC generating unit 32a may be provided instead of the second RF generating unit 31b.

[0026] The exhaust system 40 may be connected to, for example, a gas exhaust port 10e provided at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure regulating valve regulates the pressure in the plasma processing space 10s. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0027] <Substrate support part> Next, the configuration of the substrate support part 11 will be described with reference to Fig. 3. Fig. 3 is a cross-sectional view showing an outline of an example of the configuration of the substrate support part 11 according to one embodiment.

[0028] As described above, the main body 111 of the substrate support 11 includes the base 1110 and the electrostatic chuck 1111 .

[0029] The base 1110 is made of a conductive material such as aluminum. The base 1110 has the aforementioned flow path 1110a formed therein. In one embodiment, the base 1110 and the electrostatic chuck 1111 are integrated with each other by, for example, an adhesive layer. The base 1110 may be made of insulating ceramics such as SiC. In this case, the base 1110 does not function as a lower electrode.

[0030] As described above, the electrostatic chuck 1111 has a dielectric member 1111a. The dielectric member 1111a is formed in a substantially circular plate shape. The dielectric member 1111a is made of a ceramic material such as aluminum oxide or aluminum nitride. The dielectric member 1111a has the central region 111a and the annular region 111b described above. The dielectric member 1111a may be formed by thermal spraying of the ceramic material.

[0031] In one embodiment, the central region 111a has a diameter smaller than the diameter of the substrate W and is positioned higher than the annular region 111b. Therefore, when the substrate W is supported on the central region 111a, a peripheral portion of the substrate W extends horizontally beyond the central region 111a.

[0032] In the example of FIG. 3, an integrally formed dielectric member 1111a has a central region 111a and an annular region 111b. Alternatively, the dielectric member 1111a may be divided into a central portion and an annular portion. In this case, the central portion may have the central region 111a, and the annular portion may have the annular region 111b. Also, in the example of FIG. 3, the central portion and the annular portion are formed as an integral unit. Alternatively, the central portion and the annular portion may be formed as separate bodies.

[0033] The electrostatic chuck 1111 is disposed within a dielectric member 1111a and includes a first electrode layer 1111b and a second electrode layer 1111c disposed below the central region 111a. Power is applied to the first electrode layer 1111b from an AC power supply or a DC power supply (not shown). The resulting electrostatic force attracts and holds the substrate W to the central region 111a. That is, the first electrode layer 1111b functions as an attraction electrode for the substrate W. In one embodiment, the first electrode layer 1111b is formed in a circular shape in a plan view. The first electrode layer 1111b may also have a plurality of electrode layer segments divided, for example, in the radial and / or circumferential directions.

[0034] The second electrode layer 1111c is disposed below the first electrode layer 1111b. A bias RF signal and / or a DC signal is applied to the second electrode layer 1111c from an RF power supply or a DC power supply (not shown), i.e., a bias power supply. This causes ions in the plasma to be attracted toward the substrate W in the central region 111a. That is, the second electrode layer 1111c functions as a bias electrode. In one embodiment, the second electrode layer 1111c is formed in a circular shape in a plan view. The second electrode layer 1111c may also have a plurality of electrode layer segments divided, for example, in the radial and / or circumferential directions. The bias power supply may be the above-described second RF generator 31b or first DC generator 32a.

[0035] The base 1110 has a through-hole 114a2 penetrating from the lower surface to the upper surface of the base 1110 below the central region 111a, and the dielectric member 1111a has a through-hole 114a1 penetrating from its lower surface to the central region 111a. The through-hole 114a1 of the dielectric member 1111a is in communication with the through-hole 114a2 of the base 1110. The through-hole 114a1 of the dielectric member 1111a and the through-hole 114a2 of the base 1110 form a heat transfer gas supply hole 114a configured to supply a heat transfer gas to the gap between the rear surface of the substrate W and the central region 111a. The heat transfer gas supply hole 114a may be a circular hole. In one embodiment, the heat transfer gas supply holes 114a are provided at multiple locations in the central region 111a. That is, the dielectric member 1111a has a plurality of through holes 114a1 that penetrate from the lower surface to the central region 111a, and the base 1110 has a plurality of through holes 114a2 that penetrate from the lower surface to the upper surface of the base 1110 below the central region 111a. The plurality of through holes 114a1 of the dielectric member 1111a and the plurality of through holes 114a2 of the base 1110 each form a plurality of heat transfer gas supply holes 114a.

[0036] The electrostatic chuck 1111 further includes at least one conductive member 115a (described later) disposed around the heat transfer gas supply hole 114a. The conductive member 115a is at least partially disposed within the electrostatic chuck 1111 so as to surround the heat transfer gas supply hole 114a.

[0037] The base 1110 includes a sleeve 113a disposed in a through-hole 114a2 of the base 1110. The sleeve 113a is formed of an insulating material and has a generally cylindrical shape with a through-hole 114a3. The through-hole 114a3 of the sleeve 113a is connected to the through-hole 114a1 of the dielectric member 1111a. Therefore, the through-hole 114a1 of the dielectric member 1111a and the through-hole 114a3 of the sleeve 113a form the heat transfer gas supply hole 114a. The sleeve 113a insulates the base 1110 from the heat transfer gas supply hole 114a. The sleeve 113a is fixed to the base 1110 by a bonding layer. Note that the sleeve 113a may be detachably attached to the base 1110 without a bonding layer. Furthermore, the sleeve 113a may have a double structure of an inner sleeve and an outer sleeve, and in this case, the inner sleeve may be detachably attached to the outer sleeve.

[0038] The base 1110 has a through-hole 114c2 below the central region 111a that penetrates from the lower surface to the upper surface of the base 1110, and the dielectric member 1111a has a through-hole 114c1 that penetrates from its lower surface to the central region 111a. The through-hole 114c1 of the dielectric member 1111a is connected to the through-hole 114c2 of the base 1110. The through-hole 114c1 of the dielectric member 1111a and the through-hole 114c2 of the base 1110 form a lifter pin through-hole 114c. A lifter pin 1112 that can be raised and lowered is inserted into the lifter pin through-hole 114c. The lifter pin through-hole 114c may be a circular hole. The lifter pin 1112 rises upward from the central region 111a, thereby lifting the substrate W supported on the central region 111a. In one embodiment, the lifter pins 1112 and the lifter pin through holes 114c are provided at three locations in the central region 111a. That is, the dielectric member 1111a has at least three through holes 114c1 penetrating from its lower surface to the central region 111a, and the base 1110 has at least three through holes 114c2 penetrating from its lower surface to its upper surface. The at least three through holes 114c1 of the dielectric member 1111a and the at least three through holes 114c2 of the base 1110 form at least three lifter pin through holes 114c, respectively.

[0039] The base 1110 includes a sleeve 113c disposed within a through-hole of the base 1110. The sleeve 113c is formed of an insulating material and has a generally cylindrical shape with a through-hole 114c3. The through-hole 114c3 of the sleeve 113c is connected to the through-hole 114c1 of the dielectric member 1111a. Therefore, the through-hole 114c1 of the dielectric member 1111a and the through-hole 114c3 of the sleeve 113c form the lifter pin through-hole 114c. The sleeve 113c insulates the base 1110 from the lifter pin through-hole 114c. The sleeve 113c is fixed to the base 1110 by a bonding layer. Note that the sleeve 113c may be detachably attached to the base 1110 without a bonding layer. Furthermore, the sleeve 113c may have a double structure of an inner sleeve and an outer sleeve, and in this case, the inner sleeve may be detachably attached to the outer sleeve.

[0040] The dielectric member 1111a includes a third electrode layer 1111d and a fourth electrode layer 1111e disposed below the annular region 111b. Power is applied to the third electrode layer 1111d from an AC or DC power supply (not shown). The resulting electrostatic force attracts and holds the ring assembly 112 (edge ​​ring) to the annular region 111b. That is, the third electrode layer 1111d functions as an attraction electrode for the edge ring. In one embodiment, the third electrode layer 1111d is annular in plan view. The third electrode layer 1111d may also have multiple electrode layer segments divided, for example, in the radial and / or circumferential directions. While the example of FIG. 3 illustrates both the third electrode layer 1111d and the fourth electrode layer 1111e disposed within the dielectric member 1111a, this is not limiting. For example, only one of the third electrode layer 1111d and the fourth electrode layer 1111e may be disposed within the dielectric member 1111a.

[0041] The fourth electrode layer 1111e is disposed below the third electrode layer 1111d. A bias RF signal and / or a DC signal is applied to the fourth electrode layer 1111e from an RF power supply or a DC power supply (not shown). This adjusts the plasma sheath in the outer peripheral region of the substrate W and above the edge ring, thereby improving the in-plane uniformity of the plasma processing. In one embodiment, the fourth electrode layer 1111e is formed in an annular shape in a plan view. The fourth electrode layer 1111e may also have a plurality of electrode layer segments divided, for example, in the radial and / or circumferential directions.

[0042] The base 1110 has a through-hole 114b2 below the annular region 111b, penetrating from its lower surface to its upper surface, and the dielectric member 1111a has a through-hole 114b1 penetrating from its lower surface to the annular region 111b. The through-hole 114b1 of the dielectric member 1111a is connected to the through-hole 114b2 of the base 1110. The through-hole 114b1 of the dielectric member 1111a and the through-hole 114b2 of the base 1110 form a heat transfer gas supply hole 114b configured to supply a heat transfer gas to the gap between the back surface of the edge ring and the annular region 111b. The heat transfer gas supply hole 114b has a substantially cylindrical shape. In one embodiment, the heat transfer gas supply holes 114b are provided at multiple locations in the central region 111a. That is, the dielectric member 1111a has a plurality of through holes 114b1 that penetrate from the lower surface to the central region 111a, and the base 1110 has a plurality of through holes 114b2 that penetrate from the lower surface to the upper surface of the base 1110 below the central region 111a. The plurality of through holes 114b1 of the dielectric member 1111a and the plurality of through holes 114b2 of the base 1110 each form a plurality of heat transfer gas supply holes 114b.

[0043] The electrostatic chuck 1111 further includes a conductive member 115b (described later) disposed around the heat transfer gas supply hole 114b. At least a portion of the conductive member 115b is provided inside the electrostatic chuck 1111 so as to surround the heat transfer gas supply hole 114b.

[0044] The base 1110 includes a sleeve 113b disposed within a through-hole of the base 1110. The sleeve 113b is formed of an insulating material and has a generally cylindrical shape with a through-hole 114b3. The through-hole 114b3 of the sleeve 113b communicates with the through-hole 114b1 of the dielectric member 1111a. Therefore, the through-hole 114b1 of the dielectric member 1111a and the through-hole 114b3 of the sleeve 113b form the heat transfer gas supply hole 114b. The sleeve 113b insulates the base 1110 from the heat transfer gas supply hole 114b. The sleeve 113b is fixed to the base 1110 by a bonding layer. Note that the sleeve 113b may be detachably attached to the base 1110 without a bonding layer. Furthermore, the sleeve 113b may have a double structure of an inner sleeve and an outer sleeve, and in this case, the inner sleeve may be detachably attached to the outer sleeve.

[0045] In one embodiment, lifter pins may be provided to lift the edge ring supported on the annular region 111b, and the lifter pins are inserted into lifter pin through-holes having the same configuration as the lifter pin through-holes 114c.

[0046] In the present disclosure, the conductive member 115a is provided around the heat transfer gas supply hole 114a and extends upward from a position at the same height as the second electrode layer 1111c or a position higher than the second electrode layer 1111c. This prevents the potential difference inside the heat transfer gas supply hole 114a from exceeding the discharge start voltage determined by Paschen's law, thereby preventing or reducing the occurrence of abnormal discharge in the heat transfer gas supply hole 114a. Similarly, the conductive member 115b is provided around the heat transfer gas supply hole 114b and extends upward from a position at the same height as the fourth electrode layer 1111e or a position higher than the fourth electrode layer 1111e. This prevents or reduces the occurrence of abnormal discharge in the heat transfer gas supply hole 114b.

[0047] Next, the configuration of the electrostatic chuck 1111 as viewed from above will be described with reference to FIG.

[0048] 4, the central region 111a is substantially circular and has an outer edge 111ar. The annular region 111b is annular and defined by the outer edge 111ar of the central region 111a and the outer edge 111br of the annular region 111b. The annular region 111b is disposed concentrically with the central region 111a.

[0049] 4, eight heat transfer gas supply holes 114a are arranged in the central region 111a at equal intervals in the circumferential direction of the central region 111a at an equal distance r1 from the center O of the electrostatic chuck 1111. Note that, in the example of FIG. 4, the heat transfer gas supply holes 114a are arranged at equal intervals in the circumferential direction of the central region 111a, but this is not limitative. It is sufficient that at least one heat transfer gas supply hole 114a is arranged, and the heat transfer gas supply holes 114a may be arranged at unequal intervals in the circumferential direction of the central region 111a.

[0050] 4, eight heat transfer gas supply holes 114b in the annular region 111b are arranged at equal intervals in the circumferential direction of the annular region 111b at an equal distance r2 from the center O of the electrostatic chuck 1111. Note that in the example of FIG. 4, the heat transfer gas supply holes 114b are arranged at equal intervals in the circumferential direction of the annular region 111b, but this is not limitative. It is sufficient that at least one heat transfer gas supply hole 114b is arranged, and the heat transfer gas supply holes 114b may be arranged at unequal intervals in the circumferential direction of the annular region 111b.

[0051] 4, three lifter pin through holes 114c are arranged in the central region 111a at an equal distance r3 from the center O of the electrostatic chuck 1111. Although three lifter pin through holes 114c are arranged in the example of FIG. 4, the number is not limited to three. Four or more lifter pin through holes 114c may be arranged.

[0052] Next, the arrangement of conductive members 115a will be described with reference to FIGS. 5A to 13B.

[0053] First Embodiment FIG. 5A is a cross-sectional view illustrating the conductive member 115a of the first embodiment. FIG. 5B is a top view of the conductive member 115a of the first embodiment. In this embodiment, the conductive member 115a has a substantially cylindrical shape formed integrally and is disposed within the dielectric member 1111a so as to surround the heat transfer gas supply hole 114a. The conductive member 115a is made of conductive ceramics. The conductive ceramics are formed by, for example, mixing aluminum oxide (Al2O3) with metal carbide and firing the mixture. The metal carbide is, for example, tungsten carbide (WC). The material of the conductive member 115a is not limited to conductive ceramics and may be a metal.

[0054] In the example of FIG. 5A, the conductive member 115a has an inner diameter d11. In the example of FIG. 5A, the conductive member 115a is exposed to the heat transfer gas supply hole 114a. In other words, a portion of the heat transfer gas supply hole 114a is defined by the conductive member 115a. Therefore, the inner diameter d11 of the conductive member 115a is substantially the same as the diameter of the heat transfer gas supply hole 114a. The conductive member 115a also has an outer diameter d21. The outer diameter d21 of the conductive member 115a is smaller than the diameter d3 of the opening formed in the first electrode layer 1111b. In the example of FIG. 5A, the outer diameter d21 of the conductive member 115a is larger than the diameter d4 of the opening formed in the second electrode layer 1111c. Note that the outer diameter d21 of the conductive member 115a may be smaller than the diameter d4 of the opening formed in the second electrode layer 1111c.

[0055] In the example of FIG. 5A, the inner diameter d11 is, for example, 0.1 mm (millimeter) to 1 mm. The outer diameter d21 is, for example, 1 mm to 5 mm. The diameter d3 of the opening formed in the first electrode layer 1111b is, for example, 1.5 mm to 9 mm. The diameter d4 of the opening formed in the second electrode layer 1111c is, for example, 0.6 mm to 9 mm.

[0056] In the example of FIG. 5B, the conductive member 115a has an annular shape with an inner diameter d11 and an outer diameter d21 when viewed from above.

[0057] In the example of FIG. 5A, the second electrode layer 1111c is disposed a distance t4 below the central region 111a and a distance t5 above the upper surface of the base 1110. Also, in the example of FIG. 5A, the conductive member 115a extends upward from a position higher than the second electrode layer 1111c. The lower surface 118 of the conductive member 115a is disposed a distance t3 above the second electrode layer 1111c. The lower surface 118 of the conductive member 115a may be located at the same height as the second electrode layer 1111c. Also, in the example of FIG. 5A, the upper surface 116 of the conductive member 115a is disposed substantially flush with the central region 111a. The upper surface 116 of the conductive member 115a may be located below the central region 111a, or may be located above the central region 111a. In the latter case, the top surface 116 of the conductive member 115 a may be configured to contact a substrate W supported on the substrate support 11 .

[0058] 5A, the conductive member 115a has a thickness t11 in the vertical direction. The thickness t11 is smaller than the distance t4. The thickness t11 is also larger than the distance t2 between the central region 111a and the first electrode layer 1111b. The thickness t11 may be equal to or smaller than the distance t2.

[0059] In the example of FIG. 5A, the thickness t11 is, for example, 0.25 mm to 2.5 mm. The interval t2 is, for example, 0.25 mm to 1 mm. The distance t3 is, for example, 0.25 mm to 2.5 mm. The distance t4 is, for example, 0.25 mm to 2.5 mm. The distance t5 is, for example, 0.25 mm to 5 mm.

[0060] The conductive member 115a of this embodiment prevents the potential difference inside the heat transfer gas supply hole 114a from exceeding the discharge start voltage determined by Paschen's law, thereby preventing or reducing the occurrence of abnormal discharge in the heat transfer gas supply hole 114a. Furthermore, in this embodiment, the inner diameter d11 of the conductive member 115a can be reduced within a range that allows a desired conductance for the heat transfer gas to be obtained in the heat transfer gas supply hole 114a. Therefore, the occurrence of temperature singularities on the substrate W during plasma processing can also be prevented or reduced.

[0061] 5A and 5B, one conductive member 115a is arranged around the through-hole, but this is not limiting. For example, multiple conductive members 115a may be arranged around the through-hole.

[0062] 6A to 6E are diagrams illustrating modified examples of conductive member 115a in the first embodiment. In the example shown in FIG. 6A, conductive member 115a11 and conductive member 115a12 are arranged around heat transfer gas supply hole 114a. Conductive member 115a11 and conductive member 115a12 have substantially the same shape and are arranged symmetrically around heat transfer gas supply hole 114a with heat transfer gas supply hole 114a as the center. In the example shown in FIG. 6B, conductive member 115a21, conductive member 115a22, conductive member 115a23, and conductive member 115a24 are arranged around heat transfer gas supply hole 114a. Conductive members 115a21, 115a22, 115a23, and 115a24 have substantially the same shape and are arranged around heat transfer gas supply hole 114a at equal intervals in the circumferential direction around heat transfer gas supply hole 114a. In the example shown in FIG. 6C, conductive members 115a31, 115a32, 115a33, and 115a34 are arranged around heat transfer gas supply hole 114a. Conductive members 115a31 and 115a34 have substantially the same shape and are arranged symmetrically around heat transfer gas supply hole 114a around heat transfer gas supply hole 114a. Conductive members 115a32 and 115a33 have substantially the same shape and are arranged symmetrically around heat transfer gas supply hole 114a around heat transfer gas supply hole 114a. Furthermore, conductive member 115a31 and conductive member 115a34 have different shapes from conductive member 115a32 and conductive member 115a33. In the example shown in FIG. 6D, conductive member 115a41 and conductive member 115a42 are arranged around heat transfer gas supply hole 114a. Conductive member 115a41 and conductive member 115a42 have substantially the same shape and are arranged symmetrically around heat transfer gas supply hole 114a. In the example shown in FIG. 6D, conductive member 115a41 and conductive member 115a42 occupy a smaller proportion of the area around heat transfer gas supply hole 114a than in the example shown in FIG. 6A. Note that conductive member 115a41 and conductive member 115a42 may have different shapes.

[0063] 5A and 5B, the conductive member 115a has a substantially cylindrical shape, but is not limited thereto. For example, as shown in FIG. 6E, the conductive member 115a5 may have a rectangular shape or another polygonal shape. In this case, a portion of the inner periphery of the conductive member 115a5 may be exposed to the heat transfer gas supply hole 114a.

[0064] In the examples shown in FIGS. 6A to 6D, multiple conductive members 115a are arranged along the circumferential direction, but this is not limiting. For example, multiple conductive members surrounding a through hole may be arranged along the vertical direction. FIGS. 7A to 7C are diagrams illustrating modifications of the conductive member 115a in the first embodiment. In the example shown in FIG. 7A, conductive members 115a61 and 115a62 are arranged around the heat transfer gas supply hole 114a. The conductive members 115a61 and 115a62 have approximately the same thickness and are arranged around the heat transfer gas supply hole 114a, spaced apart in the vertical direction. In the example shown in FIG. 7B, conductive members 115a71, 115a72, and 115a73 are arranged around the heat transfer gas supply hole 114a. Conductive member 115a71, conductive member 115a72, and conductive member 115a73 have substantially the same thickness and are arranged at equal intervals in the vertical direction around heat transfer gas supply hole 114a. Conductive member 115a71, conductive member 115a72, and conductive member 115a73 may have different thicknesses or may be arranged at unequal intervals. In the example shown in FIG. 7C, conductive member 115a81 and conductive member 115a82 are arranged around heat transfer gas supply hole 114a. Conductive member 115a81 and conductive member 115a82 have different thicknesses and are arranged at equal intervals in the vertical direction around heat transfer gas supply hole 114a.

[0065] The embodiments of FIGS. 6A to 6E and the embodiments of FIGS. 7A to 7C may be arbitrarily combined.

[0066] <Second embodiment> FIG. 8 is a cross-sectional view illustrating a conductive member 215a according to the second embodiment. In the example of FIG. 8, the conductive member 215a is completely embedded in the dielectric member 1111a. That is, the upper surface 216 of the conductive member 215a is disposed below the central region 111a, and the inner diameter d12 of the conductive member 215a is larger than the diameter of the heat transfer gas supply hole 114a. In addition, in the example of FIG. 8, the conductive member 215a extends upward from a position higher than the second electrode layer 1111c. The lower surface 218 of the conductive member 215a is spaced above the second electrode layer 1111c by a distance t3. Note that the lower surface 218 of the conductive member 215a may be at the same height as the second electrode layer 1111c.

[0067] The outer diameter d22 of the conductive member 215a is smaller than the diameter d3 of the opening formed in the first electrode layer 1111b. In the example of Fig. 8, the outer diameter d22 of the conductive member 215a is larger than the diameter d4 of the opening formed in the second electrode layer 1111c. The outer diameter d22 of the conductive member 2115a may be smaller than the diameter d4 of the opening formed in the second electrode layer 1111c.

[0068] In this embodiment, the conductive member 215a has a thickness t12 in the vertical direction. The thickness t12 is smaller than the distance t4. In the example of FIG. 8, the thickness t12 is larger than the distance t2 between the central region 111a and the first electrode layer 1111b. The thickness t12 may be smaller than the distance t2.

[0069] 8, the inner diameter d12 is, for example, 0.1 mm (millimeter) to 1 mm, and the outer diameter d22 is, for example, 1 mm to 5 mm.

[0070] In this embodiment, the conductive member 215a is completely embedded in the dielectric member 1111a, so that the conductive member 215a is not exposed to plasma during plasma processing, thereby preventing contamination of the plasma processing space 10s by the material of the conductive member 215a.

[0071] <Third embodiment> FIG. 9 is a cross-sectional view illustrating a conductive member 315a according to the third embodiment. In the example of FIG. 9, an inner circumferential surface 317 of the conductive member 315a is exposed to the heat transfer gas supply hole 114a. The inner diameter d13 of the conductive member 315a is the same as or smaller than the diameter of the heat transfer gas supply hole 114a. In addition, in the example of FIG. 9, the conductive member 315a extends upward from a position higher than the second electrode layer 1111c. The lower surface 318 of the conductive member 315a is spaced above the second electrode layer 1111c by a distance t3. The lower surface 318 of the conductive member 315a may be at the same height as the second electrode layer 1111c.

[0072] The outer diameter d23 of the conductive member 315a is smaller than the diameter d3 of the opening formed in the first electrode layer 1111b. In the example of Fig. 9, the outer diameter d23 of the conductive member 315a is larger than the diameter d4 of the opening formed in the second electrode layer 1111c. The outer diameter d23 of the conductive member 315a may be smaller than the diameter d4 of the opening formed in the second electrode layer 1111c.

[0073] In this embodiment, the conductive member 315a has a thickness t13 in the vertical direction. The thickness t13 is smaller than the distance t4. In the example of FIG. 9, the thickness t13 is larger than the distance t2 between the central region 111a and the first electrode layer 1111b. The thickness t13 may also be smaller than the distance t2. In the example of FIG. 9, the upper surface 316 of the conductive member 315a is disposed below the central region 111a. The upper surface 316 of the conductive member 315a may also be disposed above the central region 111a. In this case, the upper surface 316 of the conductive member 315a may be configured to come into contact with the substrate W supported on the substrate support 11.

[0074] 9, the inner diameter d13 is, for example, 0.1 mm (millimeter) to 1 mm, and the outer diameter d23 is, for example, 1 mm to 5 mm.

[0075] In this embodiment, the inner diameter d13 of the conductive member 315a can be made smaller than the inner diameter of the heat transfer gas supply hole 114a. This reduces the spatial volume in which electrons accelerate inside the heat transfer gas supply hole 114a. This can achieve a greater effect of suppressing abnormal discharge.

[0076] <Fourth embodiment> FIG. 10 is a cross-sectional view illustrating a conductive member 415a according to the fourth embodiment. In the example of FIG. 10, the conductive member 415a is in electrical and physical contact with the first electrode layer 4111b. That is, the outer diameter d24 of the conductive member 415a is approximately the same as the diameter d34 of the opening formed in the first electrode layer 4111b. In the example of FIG. 10, the inner diameter d14 of the conductive member 415a is approximately the same as the diameter of the heat transfer gas supply hole 114a. Note that the inner diameter d14 of the conductive member 415a may be larger than the diameter of the heat transfer gas supply hole 114a.

[0077] In this embodiment, the conductive member 415a has a thickness t14 in the vertical direction. The thickness t14 is smaller than the distance t4. In the example of FIG. 10, the thickness t14 is larger than the distance t2 between the central region 111a and the first electrode layer 1111b. The thickness t14 may also be smaller than the distance t2. In the example of FIG. 10, the upper surface 416 of the conductive member 415a is disposed substantially flush with the central region 111a. In other words, the upper surface 416 of the conductive member 415a forms part of the central region 111a. The upper surface 416 of the conductive member 415a may also be disposed below the central region 111a.

[0078] 10, the inner diameter d14 is, for example, 0.1 mm (millimeter) to 1 mm, and the outer diameter d24 is, for example, 1 mm to 5 mm.

[0079] In this embodiment, the conductive member 415a is in electrical and physical contact with the first electrode layer 4111b, so the potential of the conductive member 415a is not in a floating state but can be stabilized at the same potential as the first electrode layer 4111b.

[0080] <Fifth embodiment> FIG. 11 is a cross-sectional view illustrating a conductive member 515a according to the fifth embodiment. In the example of FIG. 11, the conductive member 515a is in electrical and physical contact with the second electrode layer 5111c. That is, the height position of the lower surface 518 of the conductive member 515a is substantially the same as the height position of the second electrode layer 5111c. The outer diameter d25 of the conductive member 515a is substantially the same as the diameter d4 of the opening formed in the second electrode layer 5111c. Furthermore, the outer diameter d25 of the conductive member 515a is smaller than the diameter d3 of the opening formed in the first electrode layer 1111b.

[0081] 11, the inner diameter d15 of the conductive member 515a is approximately the same as the diameter of the heat transfer gas supply hole 114a. Note that the inner diameter d15 of the conductive member 515a may be larger than the diameter of the heat transfer gas supply hole 114a. Also, in the example of FIG. 11, the upper surface 516 of the conductive member 515a is disposed in approximately the same plane as the central region 111a. Note that the upper surface 516 of the conductive member 515a may be disposed below the central region 111a.

[0082] 11, the inner diameter d15 is, for example, 0.1 mm (millimeter) to 1 mm, and the outer diameter d25 is, for example, 1 mm to 5 mm.

[0083] In this embodiment, the conductive member 515a is in electrical and physical contact with the second electrode layer 5111c, so the potential of the conductive member 515a is not in a floating state but can be stabilized at the same potential as the second electrode layer 5111c.

[0084] Sixth Embodiment 12 is a cross-sectional view illustrating a conductive member 615a and a heat transfer gas supply hole 114a according to the sixth embodiment. In this embodiment, the heat transfer gas supply hole 114a includes a through hole 614a in a dielectric member 1111a. The through hole 614a has an upper portion 614b (first portion) at least partially defined by an inner diameter d16 (first diameter) of the conductive member 615a, and a lower portion 614c (second portion) communicating with a lower portion of the upper portion 614b and defined by an inner diameter d56 (second diameter) of the dielectric member 1111a that is smaller than the inner diameter d16 of the conductive member 615a.

[0085] 12, the depth t56 of the upper portion 614b is approximately the same as the thickness t16 of the conductive member 615a in the vertical direction and is smaller than the distance t4. Note that the depth t56 of the upper portion 614b may be larger than the thickness t16.

[0086] In this embodiment, by making the inner diameter d56 of the lower portion 614c smaller than the inner diameter d16 of the upper portion 614b, the spatial volume in which electrons are accelerated in the lower portion 614c is reduced, thereby achieving a greater effect of suppressing abnormal discharge.

[0087] 12, the inner diameter d16 is, for example, 1 mm (millimeter) to 5 mm, and the inner diameter d56 is, for example, 0.1 mm to 2 mm.

[0088] Seventh Embodiment 13A and 13B are cross-sectional views illustrating a conductive member 715a according to the seventh embodiment. In the example of FIG. 13A, a rod-shaped member 1200 is disposed in the heat transfer gas supply hole 114a. The rod-shaped member 1200 has a substantially cylindrical shape. The rod-shaped member 1200 is formed from a plasma-resistant material such as ceramics. Within the dielectric member 1111a, the rod-shaped member 1200 may extend from the lower surface of the dielectric member 1111a to near the substrate support surface.

[0089] The outer diameter of the rod-shaped member 1200 is smaller than the diameter of the heat transfer gas supply hole 114a, thereby forming a gap between the rod-shaped member 1200 and the inner wall of the heat transfer gas supply hole 114a, and this gap forms a flow path for the heat transfer gas.

[0090] In this embodiment, the rod-shaped member 1200 is disposed inside the heat transfer gas supply hole 114a, thereby reducing the spatial volume in which electrons accelerate inside the heat transfer gas supply hole 114a. Therefore, the effect of the rod-shaped member 1200 is added to the effect of the conductive member 715a, thereby achieving a greater effect of suppressing abnormal discharge.

[0091] 13B, the conductive member 1201 may be disposed at the tip portion of the rod-shaped member 1200. In the example of FIG. 13B, the conductive member 1201 extends upward from a position higher than the second electrode layer 1111c. The conductive member 1201 may also extend upward from a position lower than the second electrode layer 1111c. The conductive member 1201 may also be disposed over the entire surface of the tip of the rod-shaped member 1200, or may be disposed partially on a part of the surface.

[0092] The above embodiment (conductive member related to heat transfer gas supply hole 114a) can also be applied to conductive member 115b surrounding heat transfer gas supply hole 114b. Similar to the rod-shaped member in heat transfer gas supply hole 114a, a rod-shaped member may also be disposed in heat transfer gas supply hole 114b. Alternatively, only one of conductive member 115a and conductive member 115b may be provided.

[0093] Moreover, the above embodiment (conductive member related to the heat transfer gas supply hole 114a) can also be applied to the conductive member (not shown) surrounding the periphery of the lifter pin through hole 114c.

[0094] In the present disclosure, the first electrode layer 1111b and the third electrode layer 1111d function as attraction electrodes, and the second electrode layer 1111c and the fourth electrode layer 1111e function as bias electrodes, but this is not limiting. For example, any one of the first electrode layer 1111b, the second electrode layer 1111c, the third electrode layer 1111d, and the fourth electrode layer 1111e may function as a heater electrode.

[0095] Although various exemplary embodiments have been described above, the present invention is not limited to the above-described exemplary embodiments, and various additions, omissions, substitutions, and modifications may be made. Furthermore, elements in different embodiments may be combined to form other embodiments. [Explanation of symbols]

[0096] W...substrate, 1...plasma processing apparatus, 10...plasma processing chamber, 20...gas supply section, 30...power supply, 40...exhaust system, 11...substrate support section, 111...main body section, 111a...central region, 111b...annular region, 112...ring assembly, 1110...base, 1111...electrostatic chuck, 1111a...dielectric member, 1111b...first electrode layer, 1111c...second electrode layer, 1111d...third electrode layer, 1111e...fourth electrode layer, 1112...lifter pin, 115a...conductive member, 115b...conductive member, 1200...rod-shaped member, 1201...conductive member.

Claims

1. a plasma processing chamber; a base disposed within the plasma processing chamber; an electrostatic chuck disposed on the base; Equipped with The electrostatic chuck comprises: a dielectric member having a substrate support surface and a ring support surface; an adsorption electrode disposed within the dielectric member; a bias electrode disposed within the dielectric member and below the chucking electrode; at least one conductive member disposed at least partially within the dielectric member; Including, the dielectric member has a through hole that penetrates from the substrate support surface or the ring support surface to a lower surface of the dielectric member, The at least one conductive member is disposed around the through hole and extends upward from a position in the same height direction as the bias electrode or a position higher than the bias electrode.

2. the at least one conductive member is exposed to the through hole; The plasma processing apparatus according to claim 1 .

3. the at least one conductive member is completely embedded within the dielectric member; The plasma processing apparatus according to claim 1 .

4. the at least one conductive member is electrically connected to the attraction electrode or the bias electrode; The plasma processing apparatus according to any one of claims 1 to 3.

5. the at least one conductive member comprises a plurality of conductive members; The plasma processing apparatus according to any one of claims 1 to 3.

6. The plurality of conductive members are arranged in a circumferential direction around the through hole. The plasma processing apparatus according to claim 5 .

7. The plurality of conductive members are arranged along a periphery of the through hole in a vertical direction. The plasma processing apparatus according to claim 5 .

8. the at least one conductive member is capable of contacting a substrate supported on the substrate support surface or an edge ring supported on the ring support surface.

3. The plasma processing apparatus according to claim 1 or 2.

9. The through hole is a first portion having a first diameter; a second portion having a second diameter smaller than the first diameter and disposed below the first portion; and the at least one conductive member is disposed around the first portion or is exposed to the first portion; The plasma processing apparatus according to any one of claims 1 to 3.

10. a rod-shaped member disposed in the through-hole and extending from a lower surface of the dielectric member to a position adjacent to the substrate support surface or the ring support surface; The plasma processing apparatus according to any one of claims 1 to 3.

11. The rod-shaped member has a conductive member at its tip. The plasma processing apparatus according to claim 10.

12. a plasma processing chamber; a substrate support disposed within the plasma processing chamber; at least one bias power supply electrically connected to the substrate support; Equipped with The substrate support includes: The base and an electrostatic chuck disposed on the upper part of the base; Including, The electrostatic chuck comprises: a dielectric member having a substrate support surface and a ring support surface; a first electrode layer disposed within the dielectric member; a second electrode layer disposed within the dielectric member and below the first electrode layer; at least one conductive member disposed at least partially within the dielectric member; Including, the dielectric member has a through hole that penetrates from the substrate support surface or the ring support surface to a lower surface of the dielectric member, the at least one conductive member is disposed around the through hole and extends upward from a position at the same height as the second electrode layer or a position higher than the second electrode layer. Plasma processing equipment.

13. a dielectric member having a substrate support surface and a ring support surface; a first electrode layer disposed within the dielectric member; a second electrode layer disposed within the dielectric member below the first electrode layer and electrically connected to an RF or DC power source; at least one conductive member disposed at least partially within the dielectric member; Including, the dielectric member has a through hole that penetrates from the substrate support surface or the ring support surface to a lower surface of the dielectric member, an electrostatic chuck, wherein the at least one conductive member is arranged around the through hole and extends upward from a position at the same height as the second electrode layer or a position higher than the second electrode layer;

14. the at least one conductive member is exposed to the through hole; 14. The electrostatic chuck of claim 13.

15. the at least one conductive member is completely embedded within the dielectric member; 14. The electrostatic chuck of claim 13.

16. the at least one conductive member is electrically connected to the first electrode layer or the second electrode layer; The electrostatic chuck according to any one of claims 13 to 15.

17. the at least one conductive member comprises a plurality of conductive members; The electrostatic chuck according to any one of claims 13 to 15.

18. The plurality of conductive members are arranged in a circumferential direction around the through hole.

18. The electrostatic chuck of claim 17.

19. The plurality of conductive members are arranged along a periphery of the through hole in a vertical direction.

18. The electrostatic chuck of claim 17.

20. the at least one conductive member is capable of contacting a substrate supported on the substrate support surface or an edge ring supported on the ring support surface.

15. The electrostatic chuck according to claim 13 or 14.

21. The through hole is a first portion having a first diameter; a second portion having a second diameter smaller than the first diameter and disposed below the first portion; and the at least one conductive member is disposed around the first portion or is exposed to the first portion; The electrostatic chuck according to any one of claims 13 to 15.

22. a rod-shaped member disposed in the through-hole and extending from a lower surface of the dielectric member to a position adjacent to the substrate support surface or the ring support surface; The electrostatic chuck according to any one of claims 13 to 15.

23. The rod-shaped member is A conductive member is provided at the tip thereof.

23. The electrostatic chuck of claim 22.

24. the first electrode layer functions as an attraction electrode, and the second electrode layer functions as a bias electrode; The electrostatic chuck according to any one of claims 13 to 15.

Images