Method for measuring the height of semiconductor microbumps

Abstract

Provide a method for measuring the height of microbumps of a semiconductor capable of determining the presence or absence of defects. 【Solution means】The method includes capturing an image of the top of the measurement target with a first image capture unit, and detecting a first movement distance d between the work platform or the first light source and the first image capture unit with a sensor unit, capturing an image of the top of the measurement target with a second image capture unit, and detecting a second movement distance D between the work platform or the second light source and the second image capture unit with a sensor unit. When d = D, the processing unit determines that the height of the measurement target is equal to the height of the reference target. When d > D, the height of the measurement target is calculated by the formula ΔH=(d - D)×tan(θ), H = H s +ΔH. When d < D, the height of the measurement target is calculated by the formula ΔH=(D - d)×tan(θ), H = H s -ΔH, and includes the above.

Description

[Technical Field]

[0001] This invention relates to a measurement method, and more particularly to a method for measuring the height of microbumps in semiconductors. [Background technology]

[0002] Semiconductors are materials or substances in which electrical conductivity is interposed between a metal conductor and an insulator. The surface of a semiconductor has microbumps such as bonding pads, copper posts, metal eutectics, and metal contacts. However, the height of the microbumps can be too high or too low, resulting in variations in microbump height, both of which can be considered defects.

[0003] However, it is currently acknowledged that there is no method to detect the presence or absence of defects in semiconductor microbumps. [Overview of the project] [Problems that the invention aims to solve]

[0004] The main objective of the present invention is to provide a method for measuring the height of semiconductor microbumps that can accurately measure the height of the object to be measured and determine whether or not there are defects in the object to be measured. [Means for solving the problem]

[0005] To achieve the above objective, the present invention provides a method for measuring the height of a semiconductor microbump, wherein a reference object and a measurement object are placed on a work platform, the shape of both the reference object and the measurement object is spherical, and the height of the reference object is H S The process involves a height H of the object to be measured, and both the reference object and the object to be measured being semiconductor microbumps. The process involves simultaneously reflecting the light rays of a first light source and the light rays of a second light source onto the top of the reference object, capturing an image of the top of the reference object using the reflected light from the first light source with a first image capture unit, capturing an image of the top of the reference object using the reflected light from the second light source with a second image capture unit, wherein the light rays of the first light source and the horizontal plane passing through the top of the reference object have a first angle, and the reflected light from the first light source and the horizontal plane passing through the top of the reference object have a second angle, and the first angle is equal to the second angle. A step of moving the work platform, or moving the first light source, the second light source, the first image capture unit, and the second image capture unit, The process involves reflecting the light rays from the first light source onto the top of the object to be measured, capturing an image of the top of the object to be measured using the reflected light from the first light source with the first image capture unit, and detecting a first movement distance of the work platform or a first movement distance between the first light source and the first image capture unit with the sensor unit, wherein the first movement distance is d. The process involves reflecting the light rays from the second light source onto the top of the object to be measured, capturing an image of the top of the object to be measured using the reflected light from the second light source with the second image capture unit, and detecting the second movement distance of the work platform or the second movement distance between the second light source and the second image capture unit with the sensor unit, wherein the second movement distance is D. If the first travel distance is equal to the second travel distance, the processing unit determines that the height of the object to be measured is equal to the height of the reference object and that the object to be measured is a good product. If the first travel distance is greater than the second travel distance, the processing unit determines that the height of the object to be measured is greater than the height of the reference object and that the object to be measured is a defective product. Furthermore, ΔH=(dD)×tan(θ),H=H sThe height of the object to be measured is calculated using the formula +ΔH, where θ is equal to the first angle. If the first travel distance is less than the second travel distance, the processing unit determines that the height of the object to be measured is less than the height of the reference object and that the object to be measured is a defective product. Furthermore, ΔH = (Dd) × tan(θ), H = H s The present invention provides a method for measuring the height of a semiconductor microbump, which includes the step of calculating the height of the object to be measured using a formula in which -ΔH and θ are equal to the first angle. [Effects of the Invention]

[0006] The effect of the present invention is that, by the method of the present invention, the height of the object to be measured can be accurately measured, and the presence or absence of defects in the object to be measured can be accurately determined based on the height difference between the reference object and the object to be measured. [Brief explanation of the drawing]

[0007] [Figure 1A-1D] This is a flowchart of the first embodiment of the method according to the present invention. [Figure 2] This is a schematic diagram of steps S10 and S20 of the first embodiment of the method according to the present invention. [Figure 3] This is a schematic diagram of steps S30, S40, S50, and S61 of the first embodiment of the method according to the present invention. [Figure 4] This is a schematic diagram illustrating the connection relationship between the sensor unit and the processing unit of the present invention. [Figures 5A-5D] This is a schematic diagram of steps S30, S40, S50, and S62 of the first embodiment of the method according to the present invention. [Figures 6A-6D] This is a schematic diagram of steps S30, S40, S50, and S63 of the first embodiment of the method according to the present invention. [Figure 7] This is a schematic diagram of steps S10 and S20 of a second embodiment of the method according to the present invention. [Figures 8A-8D] This is a flowchart of a third embodiment of the method according to the present invention. [Figure 9A-9B]It is a schematic diagram of step S10 and step S20 of the third embodiment of the method according to the present invention. [Figure 10] It is a schematic diagram of the connection relationship among the first image capture unit, the second image capture unit, and the processing unit according to the present invention. [Figures 11A-11B] It is a schematic diagram of step S30, step S40, step S50, and step S61 of the third embodiment of the method according to the present invention. [Figures 12A-12F] It is a schematic diagram of step S30, step S40, step S50, and step S62 of the third embodiment of the method according to the present invention. [Figures 13A-13F] It is a schematic diagram of step S30, step S40, step S50, and step S63 of the third embodiment of the method according to the present invention. [Figure 14] It is a schematic diagram of step S10 and step S20 of the fourth embodiment of the method according to the present invention.

Mode for Carrying Out the Invention

[0008] Hereinafter, embodiments of the present invention will be described in more detail based on the drawings and reference numerals so that those skilled in the art can implement it after studying this specification.

[0009] Figures 1A to 1D are flowcharts of the first embodiment of the method according to the present invention. Figure 2 is a schematic diagram of step S10 and step S20 of the first embodiment of the method according to the present invention. Figure 3 is a schematic diagram of step S30, step S40, step S50, and step S61 of the first embodiment of the method according to the present invention. Figure 4 is a schematic diagram of the connection relationship between the sensor unit 70 and the processing unit 80 of the present invention. Figures 5A to 5D are schematic diagrams of step S30, step S40, step S50, and step S62 of the first embodiment of the method according to the present invention. Figures 6A to 6D are schematic diagrams of step S30, step S40, step S50, and step S63 of the first embodiment of the method according to the present invention. The present invention provides a method for measuring the height of microbumps of a semiconductor and includes the following steps.

[0010] In step S10, as shown in FIGS. 1A and 2, one reference object 10 and a plurality of measurement objects 11, 12, 13 are placed on the work platform 20. The shapes of the reference object 10 and these measurement objects 11, 12, 13 are both spherical, and the height of the reference object 10 is H S (see FIG. 3), the height of the measurement object 11 is H1 (see FIG. 3), the height of the measurement object 12 is H2 (see FIG. 5D), the height of the measurement object 13 is H3 (see FIG. 6D), and the reference object 10 and these measurement objects 11, 12, 13 are all semiconductor microbumps.

[0011] In step S20, as shown in FIGS. 1A and 2, the light rays of the first light source 30 and the light rays of the second light source 40 are simultaneously reflected on the top of the reference object 10. The first image capture unit 50 captures the image of the top of the reference object 10 by the reflected light of the first light source 30, and the second image capture unit 60 captures the image of the top of the reference object 10 by the reflected light of the second light source 40. The light rays of the first light source 30 and the horizontal plane 90 passing through the top of the reference object 10 have a first angle α1, and the reflected light of the first light source 30 and the horizontal plane 90 passing through the top of the reference object 10 have a second angle α2. The first angle α1 is equal to the second angle α2. In other words, the first angle α1 corresponds to subtracting 90 degrees from the incident angle of the light rays of the first light source 30, and the second angle α2 corresponds to subtracting 90 degrees from the reflection angle of the reflected light of the first light source 30.

[0012] In step S30, as shown in FIGS. 1A, 3, 5A, 5B, 5C, 6A, 6B, 6C, the work platform 20 is moved, or the first light source 30, the second light source 40, the first image capture unit 50, and the second image capture unit 60 are moved.

[0013] In step S40, as shown in Figures 1A, 3, 4, 5A, 5C, 6B, and 6C, the light rays from the first light source 30 are reflected off the tops of the measurement targets 11, 12, and 13, and the first image capture unit 50 captures images of the tops of the measurement targets 11, 12, and 13 using the reflected light from the first light source 30. The sensor unit 70 also detects the first movement distance of the work platform 20, or the first movement distance between the first light source 30 and the first image capture unit 50, where the first movement distances are d1, d2, and d3.

[0014] In step S50, as shown in Figures 1A, 3, 4, 5B, 5C, 6A, and 6C, the light rays from the second light source 40 are reflected off the tops of the measurement targets 11, 12, and 13, and the second image capture unit 60 captures images of the tops of the measurement targets 11, 12, and 13 using the reflected light from the second light source 40. The sensor unit 70 also detects the second movement distance of the work platform 20, or the second movement distance between the second light source 40 and the second image capture unit 60, where the second movement distances are D1, D2, and D3.

[0015] In step S61, as shown in Figures 1B, 3, and 4, when the first travel distance d1 is equal to the second travel distance D1, the processing unit 80 adjusts the height H1 of the measurement target 11 to the height H of the reference target 10. S This is equivalent to the above, and the measurement target 11 is determined to be a good product.

[0016] In step S62, as shown in Figures 1C, 4, and 5A to 5D, if the first movement distance d2 is greater than the second movement distance D2, the processing unit 80 adjusts the height H2 of the measurement target 12 to the height H of the reference target 10. S If the value is greater than and the measurement target 12 is determined to be a defective product, then ΔH2=(d2-D2)×tan(θ),H2=H s The height H2 of the object to be measured 12 is calculated using the formula +ΔH2, where θ is equal to the first angle α1.

[0017] In step S63, as shown in FIGS. 1D, 4, 6A to 6D, when the first moving distance d3 is smaller than the second moving distance D3, the processing unit 80 determines that the height H3 of the measurement target 13 is smaller than the height H of the reference target 10 and that the measurement target 13 is a defective product. Further, the height H3 of the measurement target 13 is calculated by the calculation formula ΔH3 = (D3 - d3) × tan(θ), H3 = H - ΔH3, where θ is equal to the first angle α1. S and the measurement target 13 is determined to be a defective product. Further, the height H3 of the measurement target 13 is calculated by the calculation formula ΔH3=(D3 - d3)×tan(θ), H3 = H s - ΔH3, where θ is equal to the first angle α1.

[0018] In the first embodiment, in step S20, as shown in FIG. 2, the light beam of the second light source 40 and the reflected light of the second light source 40 overlap the axis 102 of the reference target 10. In step S50, as shown in FIGS. 3, 5B, and 6A, the light beam of the second light source 40 and the reflected light of the second light source 40 overlap the axes 112, 122, and 132 of these measurement targets 11, 12, and 13.

[0019] When the work platform 20 moves with acceleration, or when the first light source 30, the second light source 40, the first image capture unit 50, and the second image capture unit 60 move with acceleration, the moving speed of the work platform 20 and the moving speeds of the first light source 30, the second light source 40, the first image capture unit 50, and the second image capture unit 60 become unstable, and the first image capture unit 50 cannot clearly capture the images of the tops of these measurement targets 11, 12, and 13 with the reflected light of the first light source 30, and the second image capture unit 60 cannot clearly capture the images of the tops of these measurement targets 11, 12, and 13 with the reflected light of the second light source 40.

[0020] Preferably, in step S30, the work platform 20 moves at a constant speed, or the first light source 30, the second light source 40, the first image capture unit 50, and the second image capture unit 60 move at a constant speed.

[0021] Therefore, the movement speeds of the first light source 30, the second light source 40, the first image capture unit 50, and the second image capture unit 60 are very stable, the first image capture unit 50 can clearly capture images of the tops of the measurement targets 11, 12, and 13 using the reflected light from the first light source 30, and the second image capture unit 60 can clearly capture images of the tops of the measurement targets 11, 12, and 13 using the reflected light from the second light source 40.

[0022] Preferably, the semiconductor microbumps are bonding pads, copper posts, metal eutectic, or metal contacts.

[0023] Figure 7 is a schematic diagram of steps S10 and S20 of a second embodiment of the method according to the present invention. The difference between the second embodiment and the first embodiment is that in step S20, as shown in Figure 7, the light ray from the second light source 40 and the horizontal plane 90 passing over the top of the reference object 10 have a third angle α3, and the reflected light from the second light source 40 and the horizontal plane 90 passing over the top of the reference object 10 have a fourth angle α4, with the third angle α3 being equal to the fourth angle α4. In other words, the third angle α3 corresponds to the incident angle of the light ray from the second light source 40 minus 90 degrees, and the fourth angle α4 corresponds to the reflection angle of the reflected light from the second light source 40 minus 90 degrees. Otherwise, the other technical features of the second embodiment are exactly the same as the other technical features of the first embodiment.

[0024] Figures 8A to 8D are flowcharts of a third embodiment of the method according to the present invention. Figures 9A and 9B are schematic diagrams of steps S10 and S20 of the third embodiment of the method according to the present invention. Figure 10 is a schematic diagram of the connection relationship between the first image capture unit 50, the second image capture unit 60, and the processing unit 80 according to the present invention. Figures 11A and 11B are schematic diagrams of steps S30, S40, S50, and S61 of the third embodiment of the method according to the present invention. Figures 12A to 12F are schematic diagrams of steps S30, S40, S50, and S62 of the third embodiment of the method according to the present invention. Figures 13A to 13F are schematic diagrams of steps S30, S40, S50, and S63 of the third embodiment of the method according to the present invention. The present invention provides a method for measuring the height of a semiconductor microbump, and includes the following steps.

[0025] Specifically, in process S10, as shown in Figures 8A and 9A, one reference object 10A and multiple measurement objects 11A, 12A, and 13A are placed on the work platform 20, and the shape of both the reference object 10A and these measurement objects 11A, 12A, and 13A is rectangular, and the height of the reference object 10A is H S In A (see Figure 11A), the height of measurement target 11A is H1A (see Figure 11A), the height of measurement target 12A is H2A (see Figure 12F), and the height of measurement target 13A is H3A (see Figure 13F). Reference target 10A and these measurement targets 11A, 12A, and 13A are all semiconductor microbumps.

[0026] In step 20, as shown in Figures 8A, 9A, 9B, and 10, the light rays from the first light source 30 and the light rays from the second light source 40 are simultaneously reflected off the top surface 101 of the reference object 10A. The first image capture unit 50 captures an image of the first end 1011 and the second end 1012 on the top surface 101 of the reference object 10A using the reflected light from the first light source 30. The second image capture unit 60 captures an image of the first end 1011 and the second end 1012 on the top surface 101 of the reference object 10A using the reflected light from the second light source 40. The processing unit 80 calculates the midpoint positions 1013, 1013A, and 1013B of the first end 1011 and the second end 1012 on the top surface 101 of the reference object 10A based on the images of the first end 1011 and the second end 1012 on the top surface 101 of the reference object 10A.

[0027] More specifically, as shown in Figure 9B, the rays from the first light source 30 and the second light source 40 may be directed onto the top surface 101 of the reference object 10A along the midpoint line L1, in which case the midpoint position 1013 is exactly at the axial position of the reference object 10A. The rays from the first light source 30 and the second light source 40 may also be directed onto the top surface 101 of the reference object 10A along the eccentric lines L2 and L3, in which case the midpoint positions 1013A and 1013B are exactly at the eccentric positions of the reference object 10A. The rays from the first light source 30 and the top surface of the reference object 10A have a first angle α1A, and the reflected light from the first light source 30 and the top surface of the reference object 10A have a second angle α2A, with the first angle α1A being equal to the second angle α2A. In other words, the first angle α1A corresponds to the incident angle of the light rays from the first light source 30 minus 90 degrees, and the second angle α2A corresponds to the reflection angle of the reflected light from the first light source 30 minus 90 degrees.

[0028] In step S30, as shown in Figures 8A, 11A, 12A, 12B, 12C, 12E, 13A, 13B, 13C, and 13E, the work platform 20 is moved, and the first light source 30, the second light source 40, the first image capture unit 50, and the second image capture unit 60 are moved.

[0029] In step S40, as shown in Figures 4, 8A, 11A, 11B, 12A-12E, and 13A-13E, the light rays from the first light source 30 are reflected off the top surfaces 111, 121, and 131 of the measurement targets 11A, 12A, and 13A. The first image capture unit 50 captures images of the first ends 1111, 1211, and 1311 and the second ends 1112, 1212, and 1312 of the top surfaces 111, 121, and 131 of the measurement targets 11, 12, and 131 using the reflected light from the first light source 30. The processing unit 80 then captures images of the first ends 1111, 121, and 1311 and the second ends 1112, 1212, and 1312 of the top surfaces 111, 121, and 131 of the measurement targets 11A, 12A, and 13A. Based on the images of the first end 1111, 1211, 1311 and the second end 1112, 1212, 1312, the midpoint positions 1113, 1113A, 1113B, 1213, 1213A, 1213B, 1313, 1313A, 1313B, 1313, 1313A, 1313B, 1113, 1313A, 1313B on the top surface of these measurement targets 11A, 12A, 13A are calculated, and the sensor unit 70 detects the first movement distance of the work platform 20 or the first movement distance between the first light source 30 and the first image capture unit 50, with the first movement distances being d1A, d2A, and d3A.

[0030] More specifically, as shown in Figure 11B, the rays from the first light source 30 and the second light source 40 may be directed along the midpoint line L1 to the top surface 111 of the object to be measured 11A, in which case the midpoint position 1113 is exactly at the axial position of the object to be measured 11A. The rays from the first light source 30 and the second light source 40 may also be directed along the eccentric lines L2 and L3 to the top surface 111 of the object to be measured 11A, in which case the midpoint positions 1113A and 1113B are exactly at the eccentric positions of the object to be measured 11A.

[0031] More specifically, as shown in Figure 12D, the rays from the first light source 30 and the second light source 40 may be directed along the midpoint line L1 to the top surface 121 of the object to be measured 12A, in which case the midpoint position 1213 is exactly at the axial position of the object to be measured 12A. The rays from the first light source 30 and the second light source 40 may also be directed along the eccentric lines L2 and L3 to the top surface 121 of the object to be measured 12A, in which case the midpoint positions 1213A and 1213B are exactly at the eccentric positions of the object to be measured 12A.

[0032] More specifically, as shown in Figure 13D, the rays from the first light source 30 and the second light source 40 may be directed along the midpoint line L1 to the top surface 131 of the object to be measured 13A, in which case the midpoint position 1313 is exactly at the axial position of the object to be measured 13A. The rays from the first light source 30 and the second light source 40 may also be directed along the eccentric lines L2 and L3 to the top surface 131 of the object to be measured 13A, in which case the midpoint positions 1313A and 1313B are exactly at the eccentric positions of the object to be measured 13A.

[0033] In step S50, as shown in Figures 4, 8A, 11A, 11B, 12A-12E, and 13A-13E, the light rays from the second light source 40 are reflected off the top surfaces 111, 121, and 131 of the measurement targets 11A, 12A, and 13A. The second image capture unit 60 captures images of the first ends 1111, 1211, and 1311 and the second ends 1112, 1212, and 1312 of the top surfaces 111, 121, and 131 of the measurement targets 11, 12, and 131 using the reflected light from the second light source 40. The processing unit 80 then captures images of the first ends 1111, 121, and 1311 and the second ends 1112, 1212, and 1312 of the top surfaces 111, 121, and 131 of the measurement targets 11A, 12A, and 13A. Based on the images of the first ends 1111, 1211, 1311 and the second ends 1112, 1212, 1312, the midpoint positions 1113, 1113A, 1113B, 1213, 1213A, 1213B, 1313, 1313A, 1313B, 1313, 1313A, 1313B, 1113, 1313A, and 1313B on the top surface of these measurement targets 11A, 12A, and 13A are calculated. The sensor unit 70 also detects the second movement distance of the work platform 20, or the second movement distance between the second light source 40 and the second image capture unit 60, and the second movement distances are D1A, D2A, and D3A.

[0034] In step S61, as shown in Figures 4, 8B, 11A, and 11B, when the first travel distance d1A is equal to the second travel distance D1A, the processing unit 80 sets the height H1A of the measurement target 11A to the height H of the reference target 10A. S This is equivalent to the above, and the measured object 11A is determined to be a good product.

[0035] In step S62, as shown in Figures 4, 8C, and 12A to 12F, if the first travel distance d2A is greater than the second travel distance D2A, the processing unit 80 adjusts the height H2A of the measurement target 12A to the height H of the reference target 10A. S If it is greater than A and the measured object 12A is determined to be a defective product, then ΔH2A=(d2A-D2A)×tan(θ),H2A=H s The height H2A of the object to be measured, 12A, is calculated using the formula A + ΔH2A, where θ is equal to the first angle α1A.

[0036] In step S63, as shown in Figures 4, 8D, and 13A to 13F, if the first travel distance d3A is smaller than the second travel distance D3A, the processing unit 80 adjusts the height H3A of the measurement target 13A to the height H of the reference target 10A. S If it is smaller than A and the measurement target 13A is determined to be a defective product, then ΔH3A=(D3A-d3A)×tan(θ),H3A=H s The height H3A of the object to be measured 13A is calculated using the formula A - ΔH3A, where θ is equal to the first angle α1A.

[0037] In the third embodiment, as shown in Figure 9A, in step S20, the light rays from the second light source 40 and the reflected light from the second light source 40 coincide with the axis 102A of the reference object 10A. In step S50, as shown in Figures 11A, 12C, and 13B, the light rays from the second light source 40 and the reflected light from the second light source 40 coincide with the axes 112A, 122A, and 132A of the measurement objects 11A, 12A, and 13A.

[0038] Figure 14 is a schematic diagram of steps S10 and S20 of the fourth embodiment of the method according to the present invention. The difference between the fourth embodiment and the third embodiment is that in step S20, as shown in Figure 14, there is a third angle α3A between the light ray of the second light source 40 and the top of the reference object 10A, and a fourth angle α4A between the reflected light of the second light source 40 and the top of the reference object 10A, with the third angle α3A being equal to the fourth angle α4A. In other words, the third angle α3A corresponds to the incident angle of the light ray of the second light source 40 minus 90 degrees, and the fourth angle α4A corresponds to the reflection angle of the reflected light of the second light source 40 minus 90 degrees. Otherwise, the other technical features of the fourth embodiment are exactly the same as the other technical features of the third embodiment.

[0039] As described above, the method of the present invention can accurately measure the heights of these measurement targets 11, 11A, 12, 12A, 13, and 13A, and can accurately determine whether the measurement targets 11, 11A, 12, 12A, 13, and 13A have defects based on the difference in heights H1, H1A, H2, H2A, H3, and H3A between the reference targets 10 and 10A and the measurement targets 11, 11A, 12, 12A, 13, and 13A.

[0040] The above-described examples are merely preferred embodiments for illustrating the present invention and are not intended to limit the invention in any way. Therefore, any modifications or changes made in accordance with the spirit of the invention shall be included within the scope of protection of the invention. [Explanation of symbols]

[0041] 10, 10A References 101 Top surface 1011 1st end 1012 2nd end 1013, 1013A, 1013B intermediate point position 102, 102A axis 11, 11A, 12, 12A, 13, 13A Measurement targets 111, 121, 131 top surface 1111, 1211, 1311 1st end 1112, 1212, 1312 2nd end 1113, 1113A, 1113B, 1213, 1213A, 1213B, 1313, 1313A, 1313B Intermediate position 112, 112A, 122, 122A, 132, 132A Axis 20 Work Platforms 30 1st light source 40 Second light source 50 First Image Capture Unit 60. Second Image Capture Unit 70 Sensor Units 80 processing units d1, d1A, d2, d2A, d3, d3A First movement distance D1, D1A, D2, D2A, D3, D3A Second movement distance H1, H1A, H2, H2A, H3, H3A, H S H S A Height L1 Intermediate Line L2, L3 eccentric wire S10~S63 process α1, α1A 1st angle α2, α2A, second angle α3, α3A Third angle α4, α4A, fourth angle

Claims

1. A method for measuring the height of microbumps in semiconductors, The reference object and the measurement object are placed on the work platform, both of which are spherical in shape, and the height of the reference object is H S The process involves a measurement target height of H, where both the reference target and the measurement target are semiconductor microbumps, The process involves simultaneously reflecting the light rays of a first light source and the light rays of a second light source onto the top of the reference object, capturing an image of the top of the reference object using the reflected light from the first light source with a first image capture unit, capturing an image of the top of the reference object using the reflected light from the second light source with a second image capture unit, wherein the light rays of the first light source and the horizontal plane passing through the top of the reference object have a first angle, and the reflected light from the first light source and the horizontal plane passing through the top of the reference object have a second angle, and the first angle is equal to the second angle. A step of moving the work platform, or moving the first light source, the second light source, the first image capture unit, and the second image capture unit, The process involves reflecting the light rays from the first light source onto the top of the object to be measured, capturing an image of the top of the object to be measured using the reflected light from the first light source with the first image capture unit, and detecting a first movement distance of the work platform or a first movement distance between the first light source and the first image capture unit with the sensor unit, wherein the first movement distance is d. The process involves reflecting the light rays from the second light source onto the top of the object to be measured, capturing an image of the top of the object to be measured using the reflected light from the second light source with the second image capture unit, and detecting the second movement distance of the work platform or the second movement distance between the second light source and the second image capture unit with the sensor unit, wherein the second movement distance is D. If the first travel distance is equal to the second travel distance, the processing unit determines that the height of the object to be measured is equal to the height of the reference object and that the object to be measured is a good product. If the first travel distance is greater than the second travel distance, the processing unit determines that the height of the object to be measured is greater than the height of the reference object and that the object to be measured is a defective product. Furthermore, ΔH = (d - D) × tan(θ), H = H s The height of the object to be measured is calculated using the formula +ΔH, where θ is equal to the first angle. If the first travel distance is less than the second travel distance, the processing unit determines that the height of the object to be measured is less than the height of the reference object and that the object to be measured is defective. Furthermore, ΔH = (D - d) × tan(θ), H = H s The process includes calculating the height of the object to be measured using a formula in which -ΔH, θ is equal to the first angle, A method for measuring the height of microbumps in semiconductors.

2. The step of simultaneously reflecting the rays of the first light source and the rays of the second light source onto the top of the reference object further includes the ray of the second light source and the reflected light from the second light source overlapping with one axis of the reference object; the step of reflecting the rays of the second light source onto the top of the object to be measured further includes the ray of the second light source and the reflected light from the second light source overlapping with the axis of the object to be measured. The method for measuring the height of a microbump according to claim 1.

3. The step of simultaneously reflecting the light rays of the first light source and the light rays of the second light source onto the top of the reference object further includes the following: there is a third angle between the light rays of the second light source and the horizontal plane passing through the top of the reference object, there is a fourth angle between the reflected light from the second light source and the horizontal plane passing through the top of the reference object, and the third angle is equal to the fourth angle. The method for measuring the height of a microbump according to claim 1.

4. The step of moving the work platform, or moving the first light source, the second light source, the first image capture unit, and the second image capture unit, further includes the first light source, the second light source, the first image capture unit, and the second image capture unit moving at a constant velocity, or the work platform moving at a constant velocity. The method for measuring the height of a microbump according to claim 1.

5. The method for measuring the height of a microbump according to claim 1, wherein the microbump of the semiconductor is a bonding pad, a copper post, a metal eutectic, or a metal contact.

6. A method for measuring the height of microbumps in semiconductors, The reference object and the measurement object are placed on the work platform, both of which are rectangular in shape, and the height of the reference object is H S The process involves a measurement target height of H, where both the reference target and the measurement target are semiconductor microbumps, The process involves simultaneously reflecting the light rays of a first light source and the light rays of a second light source onto the top surface of the reference object, capturing an image of the first and second ends on the top surface of the reference object using the reflected light from the first light source with a first image capture unit, capturing an image of the first and second ends on the top surface of the reference object using the reflected light from the second image capture unit, and calculating the midpoint position of the first and second ends on the top surface of the reference object based on the images of the first and second ends on the top surface of the reference object with a processing unit, determining that there is a first angle between the light rays of the first light source and the top surface of the reference object, and that there is a second angle between the reflected light from the first light source and the top surface of the reference object, and that the first angle is equal to the second angle. A step of moving the work platform, or moving the first light source, the second light source, the first image capture unit, and the second image capture unit, The process involves reflecting the light rays from the first light source onto the top surface of the object to be measured, capturing an image of the first and second ends on the top surface of the object to be measured using the reflected light from the first light source with the first image capture unit, calculating the midpoint position of the first and second ends on the top surface of the object to be measured based on the image of the first and second ends on the top surface of the object to be measured with the processing unit, and detecting a first movement distance of the work platform or a first movement distance between the first light source and the first image capture unit, wherein the first movement distance is d. The process involves reflecting the light rays from the second light source onto the top surface of the object to be measured, capturing an image of the first and second ends on the top surface of the object to be measured using the reflected light from the second light source with the second image capture unit, calculating the midpoint position of the first and second ends on the top surface of the object to be measured based on the image of the first and second ends on the top surface of the object to be measured with the processing unit, and detecting the second movement distance of the work platform or the second movement distance between the second light source and the second image capture unit, wherein the second movement distance is D. If the first travel distance is equal to the second travel distance, the processing unit determines that the height of the object to be measured is equal to the height of the reference object and that the object to be measured is a good product. If the first travel distance is greater than the second travel distance, the processing unit determines that the height of the object to be measured is greater than the height of the reference object and that the object to be measured is a defective product. Furthermore, ΔH = (d - D) × tan(θ), H = H s The height of the object to be measured is calculated using the formula +ΔH, where θ is equal to the first angle. If the first travel distance is less than the second travel distance, the processing unit determines that the height of the object to be measured is less than the height of the reference object and that the object to be measured is a defective product. Furthermore, ΔH = (D - d) × tan(θ), H = H s The process includes calculating the height of the object to be measured using a formula in which -ΔH, θ is equal to the first angle, A method for measuring the height of microbumps in semiconductors.

7. The step of simultaneously reflecting the rays of the first light source and the rays of the second light source onto the top surface of the reference object further includes the ray of the second light source and the reflected light from the second light source coinciding with the axis of the reference object; the step of reflecting the rays of the second light source onto the top surface of the object to be measured further includes the ray of the second light source and the reflected light from the second light source coinciding with the axis of the object to be measured. The method for measuring the height of a microbump according to claim 6.

8. The step of simultaneously reflecting the light rays of the first light source and the light rays of the second light source onto the top surface of the reference object further includes the following: there is a third angle between the light rays of the second light source and the top surface of the reference object, there is a fourth angle between the reflected light of the second light source and the top surface of the reference object, and the third angle is equal to the fourth angle. The method for measuring the height of a microbump according to claim 6.

9. The step of moving the work platform, or moving the first light source, the second light source, the first image capture unit, and the second image capture unit, further includes the first light source, the second light source, the first image capture unit, and the second image capture unit moving at a constant velocity, or the work platform moving at a constant velocity. The method for measuring the height of a microbump according to claim 6.

10. The microbumps of the semiconductor are bonding pads, copper posts, metal eutectic, or metal contacts. The method for measuring the height of a microbump according to claim 6.

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