Substrate processing apparatus and substrate processing method

Abstract

This technology provides a way to perform processing on a substrate while reducing the possibility of metal contamination of the substrate. [Solution] The substrate processing apparatus comprises a charging unit 20 and a processing unit 30. The charging unit 20 includes a charger 21 that positively charges the first main surface Wa of the substrate W. The processing unit 30 has a processing chamber 31 and includes at least one of heating the substrate W in the processing chamber 31 and supplying a processing gas, and performs processing that involves the generation of metal ions in the processing chamber 31.

Description

Technical Field

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[0001] The present disclosure relates to a substrate processing apparatus and a substrate processing method.

Background Art

[0002] Conventionally, a substrate processing apparatus that processes a substrate using ozone gas has been proposed (for example, Patent Document 1). In Patent Document 1, the substrate processing apparatus includes a heat treatment chamber, an ozone gas supply line for supplying ozone gas to the heat treatment chamber, and an exhaust line for discharging gas from the heat treatment chamber to the outside. A substrate is carried into the heat treatment chamber and placed in a horizontal posture. The ozone gas is supplied into the heat treatment chamber through the ozone gas supply line and acts on the main surface of the substrate. The ozone gas can, for example, oxidize and decompose an organic film on the main surface of the substrate. The ozone gas is discharged from the heat treatment chamber to the outside through the exhaust line.

Prior Art Documents

Patent Documents

[0003] <00000​​​​​​​​​​​​​​​​​When the gas reacts with the inner walls of the chamber and the supply pipe, metals may leach from the inner walls into the supply pipe in an ionic state. These metal ions may adhere to the substrate inside the chamber, potentially causing metal contamination of the substrate.

[0006] Therefore, the purpose of this disclosure is to provide a technology that can perform processing on a substrate while reducing the possibility of metal contamination of the substrate. [Means for solving the problem]

[0007] A first embodiment is a substrate processing apparatus comprising: a charging unit including a charger for positively charging the first main surface of a substrate having a first main surface and a second main surface; and a processing unit having a processing chamber, which includes at least one of heating the substrate in the processing chamber and supplying a processing gas, and performs processing that involves the generation of metal ions in the processing chamber.

[0008] A second embodiment is a substrate processing apparatus according to the first embodiment, wherein the processing unit is connected to the processing chamber and includes a supply pipe through which the processing gas flows, and the processing gas includes ozone gas.

[0009] A third embodiment is a substrate processing apparatus according to the first or second embodiment, wherein the charger includes a first ionizer for charging that supplies positive ions to the first main surface of the substrate.

[0010] A fourth embodiment is a substrate processing apparatus according to the third embodiment, wherein the charging unit further includes a rectifier plate provided between the outlet of the first ionizer and the substrate.

[0011] A fifth embodiment is a substrate processing apparatus according to the fourth embodiment, wherein the charging unit includes a displacement drive unit that changes the positional relationship between the first ionizer and the substrate to change the supply range of cations to the first main surface of the substrate.

[0012] A sixth embodiment is a substrate processing apparatus according to the fifth embodiment, wherein the displacement drive unit rotates at least one of the substrate and the first ionizer about a rotation axis that intersects the first main surface of the substrate.

[0013] A seventh embodiment is a substrate processing apparatus according to the fifth or sixth embodiment, wherein the displacement drive unit moves at least one of the substrate and the first ionizer in a direction along the first main surface of the substrate.

[0014] The eighth aspect is a substrate processing apparatus according to any one of the fifth to seventh aspects, wherein the displacement drive unit causes the first ionizer to oscillate.

[0015] The ninth embodiment is a substrate processing apparatus according to any one of the first to eighth embodiments, wherein the charging unit includes a static eliminator for removing static electricity from the first main surface of the substrate.

[0016] A tenth aspect is a substrate processing apparatus according to the ninth aspect, wherein the static eliminator includes a second ionizer, and the second ionizer supplies negative particles, which include at least one of electrons and anions, and cations to the first main surface of the substrate.

[0017] The eleventh embodiment is a substrate processing apparatus according to any one of the first to tenth embodiments, wherein the processing unit includes a main plate provided in the processing chamber and having an opposing surface that faces the second main surface of the substrate at a distance from it, and a support protruding from the opposing surface and supporting the second main surface of the substrate, and the charger positively charges both the first main surface and the second main surface of the substrate.

[0018] A twelfth aspect is a substrate processing apparatus according to the eleventh aspect, wherein the charger includes the first main surface of the substrate, a first ionizer that supplies cations to the portion of the substrate outside the first main surface, and a guide member that guides the cations flowing through the outer portion to the second main surface of the substrate.

[0019] A thirteenth embodiment is a substrate processing apparatus according to the twelfth embodiment, wherein the charging unit comprises a substrate placement portion that supports the second main surface of the substrate, a plurality of lifting pins, and a pin drive unit that raises the plurality of lifting pins to lift the substrate from the substrate placement portion and lowers the plurality of lifting pins to place the substrate on the substrate placement portion, the charger includes a move drive unit that moves the induction member between a charging position and a standby position while the plurality of lifting pins support the substrate, the charging position is a position in which a part of the induction member is interposed between the second main surface of the substrate supported by the plurality of lifting pins and the substrate placement portion, and the standby position is a position outside the substrate.

[0020] A fourteenth aspect is a substrate processing apparatus according to the eleventh aspect, wherein the charger includes a first ionizer having an outlet for releasing cations, and the first ionizer is provided at a position where the outlet faces the side surface of the substrate.

[0021] A 15th embodiment is a substrate processing apparatus according to the 14th embodiment, wherein the charging unit further includes a lifting drive unit that moves one of the first ionizer and the substrate up and down relative to the other.

[0022] The sixteenth embodiment is a substrate processing apparatus according to any one of the first to fifteenth embodiments, wherein the processing unit includes a heater for heating the substrate as part of the processing, and the charging unit further includes a cooler for cooling the substrate.

[0023] The 17th embodiment is a substrate processing apparatus according to any one of the first to 16 embodiments, wherein the charging unit further includes one or more charging sensors for measuring the measurement potential of the first main surface of the substrate.

[0024] The 18th embodiment is a substrate processing apparatus according to the 17th embodiment, comprising a control unit that causes the charger to supply cations toward the first main surface of the substrate when the measurement potential is less than a charging reference value.

[0025] Aspect 19 is a substrate processing apparatus according to Aspect 18, wherein the charging sensor measures the measurement potential at a plurality of positions on the first main surface, and the control unit causes the charger to supply cations toward the position where the measurement potential is less than the charging reference value among the plurality of positions.

[0026] Aspect 20 is a substrate processing apparatus according to any one of Aspects 1 to 19, wherein the charger includes a substrate holding unit that rotates the substrate while holding the substrate, a first discharge unit that sequentially discharges a plurality of processing liquids toward the first main surface of the substrate held by the substrate holding unit, and a second discharge unit that discharges a rinse liquid toward the second main surface of the substrate held by the substrate holding unit, the charging unit includes a control unit that controls the substrate holding unit, the first discharge unit, and the second discharge unit to perform a series of processes on the substrate, and the control unit discharges the rinse liquid toward the second main surface of the substrate through the second discharge unit under processing conditions in which the first main surface of the substrate after the series of processes is positively charged.

[0027] Aspect 21 is a substrate processing apparatus according to any one of Aspects 1 to 20, including a transfer unit, wherein the charging unit is provided outside the processing chamber, the transfer unit has an insulating contact portion, and the substrate is transferred between the charging unit and the processing unit while the contact portion supports or holds the substrate.

[0028] Aspect 22 is a substrate processing apparatus according to Aspect 21, including a load port on which a carrier containing the substrate is placed, a plurality of dry processing units each including the charging unit, the transfer unit, and the processing unit, and a transfer unit that transfers the substrate between the load port and the plurality of dry processing units.

[0029] The 23rd embodiment is a substrate processing apparatus according to the 21st embodiment, comprising: a load port on which a carrier containing the substrate is placed; a relay unit for relaying the substrate; a first transport unit for transporting the substrate between the carrier and the relay unit; and a plurality of processing units, wherein the transport unit includes a second transport unit for transporting the substrate between the relay unit and the plurality of processing units, and the charging unit is provided in the relay unit.

[0030] A 24th aspect is a substrate processing method comprising a charging step of positively charging the first main surface of a substrate having a first main surface and a second main surface, and a gas bake step of performing processing that includes heating the substrate in a processing chamber and supplying a processing gas, and which involves generating metal ions in the processing chamber. [Effects of the Invention]

[0031] According to the first and 24th embodiments, metal ions repel the first main surface of the positively charged substrate. Therefore, the processing unit can perform processing on the first main surface of the substrate while reducing the possibility of the substrate being contaminated by metal.

[0032] According to the second embodiment, organic matter on the first main surface of the substrate can be oxidized and removed using highly reactive ozone gas. On the other hand, the highly reactive ozone gas increases the risk of metal ions flowing out from the inner walls of the processing chamber, etc. However, since these metal ions repel the first main surface of the substrate, the possibility of metal contamination during the oxidation and removal of organic matter is low.

[0033] According to the third embodiment, the first main surface of the substrate can be positively charged, and the charged state of the substrate W can be maintained even after the operation of the first ionizer has finished.

[0034] According to the fourth embodiment, cations can be supplied more uniformly to the first main surface of the substrate.

[0035] According to the fifth to eighth embodiments, cations can be supplied more uniformly to the first main surface of the substrate. Alternatively, a smaller first ionizer can be used.

[0036] According to the ninth embodiment, the substrate can be destaticized after processing by the processing unit. Therefore, the possibility of particles adhering to the substrate due to static electricity can be reduced.

[0037] According to the tenth embodiment, the substrate W can be discharged regardless of the positive or negative charge state of the substrate.

[0038] According to the eleventh embodiment, although metal ions may enter between the opposing surface and the second main surface of the substrate within the processing chamber, the second main surface of the substrate is positively charged, so the metal ions are repelled from the second main surface of the substrate. Therefore, the possibility of the second main surface of the substrate being contaminated by metal can also be reduced.

[0039] According to the twelfth embodiment, the first and second main surfaces of the substrate can be positively charged.

[0040] According to the 13th embodiment, even if a substrate mounting portion is provided to support the second main surface of the substrate, the first and second main surfaces of the substrate can be positively charged by the first ionizer supplying positive ions while the lifting pins lift the substrate and the induction member moves to the charged position.

[0041] According to the 14th embodiment, the first and second main surfaces of the substrate can be positively charged with a simple configuration.

[0042] According to the 15th embodiment, both the first and second main surfaces of the substrate can be more reliably positively charged.

[0043] According to the 16th embodiment, the substrate can be cooled after heating by the processing unit.

[0044] According to the 17th embodiment, the charge state of the first main surface of the substrate can be confirmed.

[0045] According to the 18th embodiment, the first main surface of the substrate can be more reliably positively charged.

[0046] According to the 19th embodiment, the first main surface of the substrate can be more reliably positively charged with low power consumption.

[0047] According to the 20th embodiment, the substrate can be subjected to sequential processing according to the processing liquid while the first main surface of the substrate can be positively charged.

[0048] According to the 21st embodiment, even if the charging unit contains metal, if the charging unit is located outside the processing chamber, it will not function as a source of metal contamination to the substrate within the processing chamber. Therefore, the possibility of metal contamination of the substrate can be further reduced.

[0049] According to the 22nd embodiment, the dry processing unit is provided with a charging unit and a processing unit. Therefore, the processing unit can perform processing immediately after the charging treatment by the charging unit.

[0050] According to the 23rd embodiment, since it is not necessary to provide a charging unit for each processing unit, manufacturing costs can be reduced. [Brief explanation of the drawing]

[0051] [Figure 1] This is a schematic plan view showing an example of the configuration of a substrate processing apparatus. [Figure 2] This is a block diagram that schematically shows an example of the internal configuration of the control unit. [Figure 3] This diagram schematically shows an example of the configuration of a dry processing unit. [Figure 4] This is a schematic cross-sectional view showing an example of a part of the configuration of the substrate placement area. [Figure 5] This flowchart shows an example of the operation of the dry processing unit. [Figure 6]This diagram schematically shows an example of a charging unit. [Figure 7] This is an enlarged view showing an example of a gas bake unit. [Figure 8] This diagram schematically shows another example of the configuration of a charging unit. [Figure 9] This figure schematically shows an example of the configuration of a charging unit according to the second embodiment. [Figure 10] This flowchart shows an example of the operation of the dry processing unit according to the second embodiment. [Figure 11] This figure schematically shows an example of the configuration of a charging unit according to the third embodiment. [Figure 12] This figure schematically shows a first example of the configuration of a charging unit according to the fourth embodiment. [Figure 13] This figure schematically shows a second example of the configuration of a charging unit according to the fourth embodiment. [Figure 14] This figure schematically shows a third example of the configuration of a charging unit according to the fourth embodiment. [Figure 15] This figure schematically shows a fourth example of the configuration of a charging unit according to the fourth embodiment. [Figure 16] This figure schematically shows a first example of the configuration of a charging unit according to the fifth embodiment. [Figure 17] This is a schematic plan view showing an example of the configuration of a guide member. [Figure 18] This figure schematically shows a second example of the configuration of a charging unit according to the fifth embodiment. [Figure 19] This figure schematically shows a first example of the configuration of a charging unit according to the sixth embodiment. [Figure 20] This flowchart shows a first example of the operation of the charging unit according to the sixth embodiment. [Figure 21] This flowchart shows a second example of the operation of the charging unit in the sixth embodiment. [Figure 22] This figure schematically shows a second example of the configuration of a charging unit according to the sixth embodiment. [Figure 23]This figure schematically shows a third example of the configuration of a charging unit according to the sixth embodiment. [Figure 24] This figure schematically shows a fourth example of the configuration of a charging unit according to the sixth embodiment. [Figure 25] This flowchart shows the first example of the operation of the charging unit according to the fourth example of the sixth embodiment. [Figure 26] This flowchart shows a second example of the operation of the charging unit in the fourth example of the sixth embodiment. [Figure 27] This figure schematically shows a first example of a charging unit according to the seventh embodiment. [Figure 28] This figure schematically shows a second example of the configuration of a charging unit according to the seventh embodiment. [Figure 29] This figure schematically shows an example of the configuration of a tower for a substrate processing apparatus according to the eighth embodiment. [Figure 30] This figure schematically shows another example of the configuration of the substrate processing apparatus according to the eighth embodiment. [Figure 31] This figure schematically shows an example of the configuration of a charging unit according to the ninth embodiment. [Figure 32] This flowchart shows an example of the operation of the wet processing unit according to the ninth embodiment. [Modes for carrying out the invention]

[0052] The embodiments will be described in detail below with reference to the drawings. Note that, for the purpose of ease of understanding, the dimensions and number of parts in the drawings are exaggerated or simplified as needed. Also, parts with similar configurations and functions are denoted by the same reference numerals, and redundant explanations are omitted in the following description.

[0053] Furthermore, in the following explanations, similar components will be denoted by the same symbols, and their names and functions will also be the same. Therefore, detailed explanations of them may be omitted to avoid redundancy.

[0054] Furthermore, even if ordinal numbers such as "first" or "second" are used in the following descriptions, these terms are used for convenience to facilitate understanding of the embodiments and are not limited to the order that may result from these ordinal numbers.

[0055] When expressions indicating relative or absolute positional relationships are used (e.g., "in one direction," "along one direction," "parallel," "orthogonal," "center," "concentric," "coaxial," etc.), unless otherwise specified, such expressions shall not only strictly represent the positional relationship but also represent a state in which there is a relative displacement in terms of angle or distance within a tolerance or a range in which equivalent functionality is obtained. When expressions indicating equality are used (e.g., "identical," "equal," "homogeneous," etc.), unless otherwise specified, such expressions shall not only strictly represent a state in which there is a quantitatively exact equality but also represent a state in which there is a difference within a tolerance or a range in which equivalent functionality is obtained. When expressions indicating shape are used (e.g., "quadrilateral" or "cylindrical"), unless otherwise specified, such expressions shall not only strictly represent the geometrically exact shape but also represent a shape with features such as concavities or chamfers within a range in which equivalent effects are obtained. When expressions such as "possess," "equip," "include," or "have" a single component are used, such expressions are not exclusive expressions that exclude the existence of other components. When the expression "at least one of A, B, and C" is used, it includes A only, B only, C only, any two of A, B, and C, and all of A, B, and C.

[0056] <First Embodiment> <Overall configuration of the substrate processing equipment> Figure 1 is a schematic plan view showing an example of the configuration of the substrate processing apparatus 100. The substrate processing apparatus 100 is a single-wafer processing apparatus that processes substrates W one at a time.

[0057] The substrate W is, for example, a semiconductor wafer, a substrate for liquid crystal displays, an organic electroluminescence (EL) substrate, a flat panel display (FPD) substrate, an optical display substrate, a magnetic disk substrate, an optical disk substrate, a magneto-optical disk substrate, a photomask substrate, or a solar cell substrate. The substrate W has a thin, flat shape. In the following, it is assumed that the substrate W is a semiconductor wafer. The substrate W has, for example, a disc shape. The diameter of the substrate W is, for example, about 300 mm, and the film thickness of the substrate W is, for example, about 0.5 mm or more and about 3 mm or less.

[0058] In the example shown in Figure 1, the substrate processing apparatus 100 includes an indexer block 110, a processing block 120, and a control unit 90. The processing block 120 is primarily responsible for processing the substrate W, while the indexer block 110 is primarily responsible for transporting the substrate W between the outside of the substrate processing apparatus 100 and the processing block 120.

[0059] The indexer block 110 includes a load port 111 and a first transport section 112. A substrate carrier (hereinafter referred to as a carrier) C, which is brought in from the outside, is placed on the load port 111. Multiple substrates W are housed in the carrier C, for example, arranged with spacing between them in the vertical direction. In the example shown in Figure 1, multiple load ports 111 are arranged.

[0060] The first transport unit 112 is a transport robot capable of removing unprocessed substrates W from carriers C placed on each load port 111. The first transport unit 112 may also be called an indexer robot. The first transport unit 112 transports the unprocessed substrates W removed from the carriers C to the processing block 120. The processing block 120 can process the unprocessed substrates W. The first transport unit 112 can also receive processed substrates W from the processing block 120 and transport the processed substrates W to the carriers C on the load ports 111.

[0061] In the example shown in Figure 1, the processing block 120 includes a plurality of processing units 121 and a second transport unit 122. The second transport unit 122 is a transport robot that transports the substrate W between the first transport unit 112 and the plurality of processing units 121. In the example shown in Figure 1, the second transport unit 122 transfers the substrate W to the first transport unit 112 via a relay unit 123. The relay unit 123 may be a shelf on which the substrate W is placed, or it may be a shuttle-type transport unit.

[0062] In the example shown in Figure 1, multiple (e.g., four) processing units 121 are arranged to surround the second transport unit 122 in a plan view. This second transport unit 122 may also be called a center robot. At each position in the plan view, the multiple processing units 121 may be stacked vertically. In other words, multiple (four in the figure) towers TW, each composed of multiple processing units 121 stacked vertically, may be arranged to surround the second transport unit 122.

[0063] In the example shown in Figure 1, the multiple processing units 121 include a wet processing unit 121W and a dry processing unit 121D.

[0064] The wet treatment unit 121W performs various wet treatments on the substrate W. For example, the wet treatment unit 121W performs a chemical treatment by supplying a chemical solution to the main surface of the substrate W, followed by a rinsing treatment by supplying a rinsing solution to the main surface of the substrate W, in that order. As chemical treatments, for example, cleaning treatment and etching treatment can be applied. In addition, the wet treatment unit 121W also performs a drying treatment to dry the substrate W after the rinsing treatment.

[0065] In some cases, a pattern may be formed on the main surface of the substrate W immediately before it is fed into the wet processing unit 121W. In this case, the wet processing unit 121W may perform hydrophobic treatment and rinsing treatment in this order between rinsing and drying. Hydrophobic treatment is a process in which a hydrophobic solution, such as a silylation solution, is supplied to the main surface of the substrate W to make the main surface of the substrate W hydrophobic. Specifically, when the hydrophobic solution acts on the main surface of the substrate W, the hydrophobic groups in the hydrophobic solution bind to the main surface of the substrate W, and the main surface of the substrate W becomes hydrophobic. Rinsing treatment after hydrophobic treatment is a process in which the hydrophobic solution is washed away with rinsing liquid. By making the substrate W hydrophobic, the surface tension of the rinsing liquid can be reduced. Therefore, the collapse of the pattern in the subsequent drying treatment can be suppressed. In this case, organic matter (hydrophobic groups) is formed on the main surface of the substrate W after drying treatment by the wet processing unit 121W. Such organic matter is removed by the dry processing unit 121D described later.

[0066] Alternatively, the wet processing unit 121W may perform sublimation drying as a drying process. Specifically, the wet processing unit 121W supplies a processing liquid containing a sublimable substance to the main surface of the substrate W, dries the processing liquid to form a solidified film of the sublimable substance, and then dries the substrate W by sublimating the solidified film. The sublimable substance is an organic substance, such as cyclohexanone oxime. In this case, organic matter (sublimable substance) may remain on the main surface of the substrate W after drying by the wet processing unit 121W. Such organic matter is removed by the dry processing unit 121D described later.

[0067] The dry processing unit 121D performs a dry processing on the substrate W. Specifically, the dry processing unit 121D performs a processing that includes either heating the substrate W or supplying a processing gas. Hereinafter, this processing will also be referred to as gas baking. Here, the dry processing unit 121D will perform both heating and supplying a processing gas. As an example, the dry processing unit 121D will supply an oxidizing gas as the processing gas. The oxidizing gas is a gas that oxidizes organic matter on the substrate W, such as ozone gas. In this way, the dry processing unit 121D oxidizes and removes organic matter from the main surface of the substrate W.

[0068] In the example shown in Figure 1, the dry processing unit 121D includes a charging unit 20 and a gas bake unit (corresponding to a processing unit) 30. The charging unit 20 positively charges the main surface of the substrate W. A detailed example of the charging unit 20 and its operation will be described in detail later. The gas bake unit 30 performs the gas bake process on the positively charged main surface of the substrate W. A detailed example of the gas bake unit 30 will also be described in detail later. In the example shown in Figure 1, the dry processing unit 121D also includes a transport unit 40. The transport unit 40 transports the substrate W between the charging unit 20 and the gas bake unit 30. The transport unit 40 can also be called a local transport unit. An example of the transport unit 40 will also be described in detail later.

[0069] The control unit 90 comprehensively controls the substrate processing apparatus 100. More specifically, the control unit 90 controls the first transport unit 112, the second transport unit 122, and the processing unit 121. Figure 2 is a schematic block diagram showing an example of the internal configuration of the control unit 90. The control unit 90 is an electronic circuit and includes, for example, a data processing unit 91 and a storage unit 92. The data processing unit 91 and the storage unit 92 may be interconnected via a bus 93. The data processing unit 91 may be an arithmetic processing unit such as a CPU (Central Processor Unit). The storage unit 92 may include a non-temporary storage unit (e.g., ROM (Read Only Memory)) 921 and a temporary storage unit (e.g., RAM (Random Access Memory)) 922. The non-temporary storage unit 921 may store, for example, a program that defines the processing to be executed by the control unit 90. By executing this program, the data processing unit 91 enables the control unit 90 to execute the processing defined in the program. Of course, some or all of the processing performed by the control unit 90 may be performed by hardware such as dedicated logic circuits.

[0070] <Dry Processing Unit> Figure 3 is a schematic diagram showing an example of the configuration of the dry processing unit 121D. In the examples of Figures 1 and 3, the charging unit 20 is adjacent to the gas bake unit 30 in the horizontal direction. Hereafter, the two main surfaces of the substrate W will be referred to as the first main surface Wa and the second main surface Wb, respectively. The first main surface Wa and the second main surface Wb are opposite surfaces to each other in the thickness direction of the substrate W. Organic matter such as hydrophobic groups is present on the first main surface Wa of the substrate W.

[0071] <Charging Unit> The charging unit 20 positively charges the first main surface Wa of the substrate W. In the example shown in Figure 3, the charging unit 20 includes a charger 21 and a substrate placement section 22. The dry processing unit 121D may include a chamber (not shown). The charger 21 and the substrate placement section 22 are located within the chamber.

[0072] The substrate placement section 22 supports or holds the substrate W in a horizontal position. Here, "horizontal position" means that the thickness direction of the substrate W is aligned with the vertical direction. The first main surface Wa (in this case, the top surface) of the substrate W is exposed within the charging unit 20 (inside a chamber not shown). In the example of Figure 3, the substrate placement section 22 has a plate-like shape and is provided in a position where its thickness direction is aligned with the vertical direction. In the example of Figure 3, the substrate placement section 22 has an upper surface 22a, which supports the second main surface Wb of the substrate W. Such a substrate placement section 22 can also be called a mounting platform. The upper surface 22a of the substrate placement section 22 may be wider than the substrate W in a plan view. Here, "plan view" means viewing the object along the vertical direction.

[0073] At least the portion of the substrate placement area 22 that contacts the substrate W is formed of an insulating material. Figure 4 is a schematic cross-sectional view showing an example of a part of the configuration of the substrate placement area 22. In the example of Figure 4, the substrate placement area 22 includes a main plate B1 and a plurality of support members P1. The main plate B1 has a plate-like shape and is provided in a position where its thickness direction is aligned with the vertical direction. In the example of Figure 4, the support members P1 are granular, and the plurality of support members P1 are dispersed on the upper surface of the main plate B1. The support members P1 protrude upward from the upper surface of the main plate B1. The second main surface Wb of the substrate W is in contact with the plurality of support members P1 and is supported by the plurality of support members P1. In other words, the support members P1 correspond to the contact portion of the substrate placement area 22 that contacts the substrate W. In the example of Figure 4, each support member P1 has a spherical shape. In the example of Figure 4, the lower part of the support member P1 is embedded in the main plate B1, and the upper part of the support member P1 protrudes from the main plate B1. The amount of protrusion of the support P1 from the upper surface of the main plate B1 may be, for example, 0.5 mm or less, and a specific example is about 0.1 mm. The support P1 (contact portion) is formed of an insulating material, for example, ceramics. The main plate B1 may be formed of an insulating material (ceramics or organic resin), or it may be formed of a conductive material such as metal.

[0074] In the example shown in Figure 3, the substrate placement portion 22 includes a plurality of positioning pins G1. The plurality of positioning pins G1 are provided on the upper surface of the main plate B1 and protrude upward from the upper surface of the main plate B1. The plurality of positioning pins G1 may be provided at equal intervals along the periphery of the substrate W. The amount of protrusion of the positioning pins G1 may be greater than the amount of protrusion of the support P1, and may be greater than, for example, the thickness of the substrate W. The positioning pins G1 abut against the side surface of the substrate W to determine the position of the substrate W in a plan view. The positioning pins G1 may also be formed from an insulating material. For example, the positioning pins G1 may be formed from ceramics or organic resin.

[0075] In the example shown in Figure 3, the charging unit 20 also includes a plurality (e.g., three or more) of lifting pins 26 and a pin drive unit 261. Each lifting pin 26 has an elongated shape extending vertically and is provided so as to be able to vertically penetrate the substrate mounting section 22 and the cooling plate 251 described later. The pin drive unit 261 is controlled by the control unit 90 and raises and lowers the plurality of lifting pins 26 between a first pin upper position and a first pin lower position. The first pin upper position is the position where the upper end of the lifting pin 26 is above the upper surface 22a of the substrate mounting section 22, and the first pin lower position is the position where the lower end of the lifting pin 26 is below the upper surface 22a of the substrate mounting section 22. The pin drive unit 261 includes, for example, an air cylinder. By raising the plurality of lifting pins 26 to the first pin upper position, the substrate W can be lifted from the substrate mounting section 22. At this time, the second main surface Wb of the substrate W abuts against the tips of the multiple lifting pins 26. With the multiple lifting pins 26 positioned above the first pin, the substrate W is transferred between the second transport unit 122 and the lifting pins 26. Furthermore, as the multiple lifting pins 26 descend to the position below the first pin while supporting the substrate W, the substrate W can be transferred to the substrate placement unit 22.

[0076] The charger 21 is controlled by the control unit 90 to positively charge the first main surface Wa of the substrate W placed in the substrate placement section 22. In the example in Figure 3, the charger 21 includes a first ionizer 21A. The first ionizer 21A supplies positive ions to the first main surface Wa of the substrate W placed in the substrate placement section 22, thereby positively charging the first main surface Wa of the substrate W. In the example in Figure 3, the first ionizer 21A is located above the substrate W placed in the substrate placement section 22.

[0077] The first ionizer 21A is, for example, a corona discharge type charging ionizer. For example, the first ionizer 21A includes a housing (not shown) and discharge electrodes. The discharge electrodes are provided inside the housing. The first ionizer 21A generates a discharge and produces positive ions by applying a voltage to the electrodes. An outlet is formed in the housing, and the first ionizer 21A discharges positive ions from the outlet of the housing toward the first main surface Wa of the substrate W. The first ionizer 21A may also generate electrons or anions (hereinafter referred to as anions), but discharges a sufficiently large number of positive ions from the outlet compared to the number of anions. For example, a capture electrode for capturing anions may be provided inside the housing of the first ionizer 21A. The first ionizer 21A may also include a blower. A blower is, for example, a fan, which moves a carrier gas (for example, air or nitrogen gas) inside the enclosure toward an outlet, causing the carrier gas to be discharged from the outlet along with cations.

[0078] The first ionizer 21A can supply positive ions to the entire surface of the first main surface Wa of the substrate W. As a result, the entire surface of the first main surface Wa of the substrate W becomes positively charged. Here, the contact parts of the substrate placement area 22 (e.g., the support P1 and the positioning pin G1) are formed of insulating material, so these contact parts are insulated from the substrate W. Therefore, even after the first ionizer 21A stops supplying positive ions, the charge of the substrate W on the substrate placement area 22 is properly maintained. The technical significance of positively charging the first main surface Wa of the substrate W will be discussed later. In addition, although the charging unit 20 is equipped with a cooler 25 in the example of Figure 3, the cooler 25 will also be discussed later.

[0079] <Conveyor Unit> In the example shown in Figure 3, the substrate placement section 22 also functions as the transport plate 41 of the transport unit 40. In the following, the substrate placement section 22 may be described as the transport plate 41. The transport unit 40 transports the substrate W between the charging unit 20 and the gas bake unit 30 with an insulating contact section (here, a support P1) supporting or holding the substrate W. For example, the transport unit 40 includes a transport plate 41 and a transport drive unit 42. The transport drive unit 42 moves the transport plate 41 along, for example, the horizontal and vertical directions. In other words, the transport drive unit 42 may include a horizontal movement drive unit and a lifting drive unit. The transport drive unit 42 includes, for example, a drive source such as a motor and a power transmission unit that transmits the driving force of the drive source to the transport plate 41. The power transmission unit includes, for example, a ball screw mechanism. The transport drive unit 42 is controlled by a control unit 90.

[0080] The transport drive unit 42 moves the transport plate 41 on which the substrate W has been charged toward the gas bake unit 30. This allows the transport unit 40 to transport the substrate W to the gas bake unit 30. Since at least the contact portion (support P1 and positioning pin G1) of the transport plate 41 is insulated from the substrate W, the transport unit 40 can transport the substrate W while maintaining its charge.

[0081] The gas bake unit 30 performs a gas bake treatment on the substrate W, as will be described in detail later. The transport unit 40 transports the substrate W, after the gas bake treatment, from the gas bake unit 30 to the charging unit 20.

[0082] <Gas bake unit (processing unit)> The gas bake unit 30 includes a processing chamber 31. The internal space of the processing chamber 31 corresponds to the processing space for performing gas bake treatment on the substrate W. In the example in Figure 3, the processing chamber 31 has an opening and closing structure for loading and unloading the substrate W. As an example, the processing chamber 31 includes an upper member 311, a lower member 312, and an opening / closing drive unit 313. The upper member 311 is located above the lower member 312. The opening / closing drive unit 313 switches between a closed state in which the upper member 311 and the lower member 312 are in contact with each other in the vertical direction, and an open state in which the upper member 311 and the lower member 312 are separated from each other. In the closed state, the upper member 311 and the lower member 312 form a sealed internal space, and in the open state, the internal space communicates with the outside where the transport unit 40 is located. In the example in Figure 3, the opening / closing drive unit 313 moves the upper member 311 in the vertical direction. The opening / closing drive unit 313 may include a linear motion mechanism such as an air cylinder or a linear motor. Alternatively, the opening / closing drive unit 313 may include a motor and a power transmission unit (for example, a rack and pinion mechanism or a ball screw mechanism) that converts the rotation of the motor into linear motion.

[0083] The material of the processing chamber 31 may include metal. For example, a stainless steel alloy may be used for the material of the processing chamber 31. At least a portion of the inner wall of the processing chamber 31 is exposed to metal or a metal compound (e.g., oxide). The metal on the inner wall of the processing chamber 31 may be released into the internal space of the processing chamber 31 in an ionic state by gas baking, as described later.

[0084] As shown in Figure 3, the gas bake unit 30 includes a substrate placement section 32. The substrate placement section 32 supports or holds the substrate W in a horizontal position inside the processing chamber 31. In the example in Figure 3, the substrate placement section 32 is formed by a part of the lower member 312 and supports the second main surface Wb (here, the bottom surface) of the substrate W. The first main surface Wa (here, the top surface) of the substrate W is exposed inside the processing chamber 31. In the example in Figure 3, the substrate placement section 32 has a plate-like shape and is provided in a position where its thickness direction is aligned with the vertical direction. In the example in Figure 3, the substrate placement section 32 forms a part of the bottom of the processing chamber 31, and the upper surface of the substrate placement section 32 supports the second main surface Wb of the substrate W. Such a substrate placement section 32 can also be called a mounting platform. In the example in Figure 3, the upper surface of the substrate placement section 32 is wider than the substrate W in a plan view.

[0085] At least the portion of the substrate placement area 32 that contacts the substrate W is formed of an insulating material. The substrate placement area 32 may include a main plate B1 and a plurality of support members P1, similar to the substrate placement area 22 (see Figure 4). Therefore, the substrate placement area 32 can support or hold the substrate W while maintaining the charged state of the substrate W. As shown in Figure 3, the substrate placement area 32 may also include a plurality of positioning pins G1.

[0086] In the example shown in Figure 3, the gas bake unit 30 also includes a plurality (e.g., three or more) of lifting pins 36 and a pin drive unit 361. Each lifting pin 36 has an elongated shape extending vertically and is provided so as to be able to vertically penetrate the substrate mounting section 32 and the heater 33 described later. The pin drive unit 361 is controlled by the control unit 90 and raises and lowers the plurality of lifting pins 36 between the second pin upper position and the second pin lower position. The second pin upper position is the position where the upper end of the lifting pin 36 is above the upper surface of the substrate mounting section 32, and the second pin lower position is the position where the lower end of the lifting pin 36 is below the upper surface of the substrate mounting section 32. The pin drive unit 361 includes, for example, an air cylinder. By raising the plurality of lifting pins 36 to the second pin upper position, the substrate W can be lifted from the substrate mounting section 32, and by lowering to the second pin lower position, the substrate W can be placed on the substrate mounting section 32. With multiple lifting pins 36 positioned above the second pin, the substrate W is transferred between the transport unit 40 and the lifting pins 36. At least the contact portion of the lifting pins 36 with the substrate W (i.e., the tip portion of the lifting pins 36) is made of an insulating material. For example, an organic resin or ceramics may be used as the insulating material.

[0087] In the example shown in Figure 3, a bellows 362 is provided on the lifting pin 36. This maintains the airtightness of the internal space of the processing chamber 31.

[0088] The gas bake unit 30 performs a gas bake treatment on the substrate W within the processing chamber 31. The gas bake treatment is a process that includes at least one of heating the substrate W and supplying a processing gas. In the example shown in Figure 3, the gas bake unit 30 includes a heater 33 and a processing gas supply unit 34. In other words, the gas bake unit 30 illustrated in Figure 3 performs both heating and supplying a processing gas to the substrate W.

[0089] The heater 33 heats the substrate W placed in the substrate placement section 32. The heater 33 is controlled by the control unit 90 and heats the substrate W so that its temperature is within a temperature range suitable for gas baking. This temperature is, for example, 100 degrees Celsius or higher. The heater 33 is, for example, an electrical resistance type or a radiant type heater. As an example, the heater 33 includes a heat source such as an electric heating wire and a heating plate. The heating plate is made of a material with high thermal conductivity (for example, aluminum or an aluminum alloy). The heating plate has a plate-like shape and is installed with its thickness direction aligned with the vertical direction. The upper surface of the heating plate abuts the lower surface of the main plate B1 of the substrate placement section 32. The heat source is provided inside the heating plate and heats the heating plate. The heat generated by the heat source is transferred to the substrate W through the heating plate and the substrate placement section 32, and the substrate W is heated.

[0090] The heat generated by the heater 33 is transferred to the processing chamber 31, so the temperature of the processing chamber 31 may also rise. As a result, the processing chamber 31 becomes relatively reactive. Consequently, metals contained in the processing chamber 31 may leach into the processing chamber 31 in an ionic state due to their reaction with the gas inside the processing chamber 31. These metal ions are cations. The metal ions include, for example, at least one of manganese ions, iron ions, and copper ions.

[0091] The processing gas supply unit 34 supplies processing gas into the processing chamber 31. The processing gas acts on the first main surface Wa of the substrate W, performing an action on the first main surface Wa of the substrate W according to the type of processing gas. The processing gas is, for example, an oxidizing gas. As a specific example, the oxidizing gas is ozone gas. In this case, the processing gas oxidizes and removes organic matter from the first main surface Wa of the substrate W. The organic matter on the first main surface Wa of the substrate W is not particularly limited, but may be, for example, hydrophobic groups. These hydrophobic groups can be formed on the first main surface Wa of the substrate W by processing in the wet processing unit 121W.

[0092] The processing gas supply unit 34 includes a supply pipe 341, a pressure adjustment unit 342, a supply valve 343, and an ozone generator 344. The downstream end of the supply pipe 341 is open inside the processing chamber 31. This downstream end of the supply pipe 341 functions as an air inlet 341a. In the example in Figure 3, the supply pipe 341 penetrates the ceiling of the processing chamber 31, and the air inlet 341a is located perpendicular to the center of the substrate W. The upstream end of the supply pipe 341 is connected to the ozone generator 344. The ozone generator 344 generates ozone gas, which is an example of a processing gas. The ozone generation method by the ozone generator 344 is not particularly limited, but at least one of the following can be applied: a silent discharge method, an electrolysis method, and an ultraviolet lamp method. The ozone generator 344 supplies ozone gas to the upstream end of the supply pipe 341.

[0093] The supply valve 343 is inserted into the supply pipe 341 and switches the supply pipe 341 open and closed. When the supply valve 343 is open, ozone gas from the ozone generator 344 flows through the inside of the supply pipe 341 toward the processing chamber 31 and into the internal space of the processing chamber 31. When the supply valve 343 is closed, the supply of ozone gas to the processing chamber 31 stops. The pressure adjustment unit 342 is, for example, an auto pressure controller. The pressure adjustment unit 342 adjusts the flow rate of the processing gas flowing through the supply pipe 341 so that the pressure inside the processing chamber 31 is within a predetermined pressure range. The pressure adjustment unit 342 and the supply valve 343 are controlled by the control unit 90.

[0094] At least a portion of the material in the longitudinal direction of the supply pipe 341 may contain metal. For example, that portion of the supply pipe 341 is formed of a stainless steel alloy. The inner wall of that portion of the supply pipe 341 is exposed to metal or a metal compound. When a processing gas (e.g., ozone gas) acts on the inner wall of the supply pipe 341, metal ions may flow into the interior of the supply pipe 341. The metal ions are cations and include, for example, at least one of iron ions, manganese ions, and copper ions. The metal ions flow into the interior of the processing chamber 31 along with the processing gas.

[0095] In the example shown in Figure 3, the gas bake unit 30 also includes a rectifier plate 35. The rectifier plate 35 has a plate-like shape and is installed with its thickness direction aligned with the vertical direction. The rectifier plate 35 is installed at a distance from the air intake port 341a in the vertical direction. The rectifier plate 35 is also installed at a distance from the substrate W in the vertical direction and faces the substrate W. In other words, the rectifier plate 35 is installed in the internal space of the processing chamber 31 between the downstream end of the supply pipe 341 and the substrate W. In plan view, the rectifier plate 35 has a shape that is concentric with the substrate W, for example, and its diameter is larger than the diameter of the substrate W. Multiple through holes 35a are formed in the rectifier plate 35. The multiple through holes 35a are arranged two-dimensionally in plan view, for example, in a matrix. The multiple through holes 35a penetrate the rectifier plate 35 in the vertical direction. In the example shown in Figure 3, the rectifier plate 35 is attached to the upper member 311.

[0096] The gas flowing into the internal space of the processing chamber 31 from the air inlet 341a of the supply pipe 341 passes through multiple through holes 35a of the rectifier plate 35. As the gas passes through the multiple through holes 35a, the gas is rectified and supplied more uniformly to the first main surface Wa of the substrate W.

[0097] As shown in Figure 3, the gas bake unit 30 also includes a discharge section 37. The discharge section 37 discharges the gas from the processing chamber 31 to the outside. The discharge section 37 includes a discharge pipe 371 and a discharge valve 372. In the example in Figure 3, the upstream end of the discharge pipe 371 is connected to the bottom of the processing chamber 31. Specifically, the upstream end of the discharge pipe 371 is connected to the lower member 312 radially outward from the substrate placement section 32. The downstream end of the discharge pipe 371 is connected to an external exhaust section. The exhaust section may be a factory utility. The discharge valve 372 is controlled by the control unit 90 to switch the opening and closing of the discharge pipe 371.

[0098] The ozone gas supplied into the processing chamber 31 through the supply pipe 341 reacts with the first main surface Wa of the substrate W to oxidize and remove organic matter from the first main surface Wa of the substrate W. The organic gas and other reactants such as water vapor produced by this reaction are discharged together with the ozone gas to the exhaust section outside the processing chamber 31 through the discharge pipe 371.

[0099] During the gas bake process using this gas bake unit 30, metal ions may flow out from the inner walls of the processing chamber 31 and the supply pipe 341. As a result, metal ions are generated inside the processing chamber 31. In other words, the gas bake process involves the generation of metal ions in the processing chamber 31. Although these metal ions may flow toward the first main surface Wa of the substrate W, the first main surface Wa of the substrate W is positively charged. Therefore, the metal ions repel the first main surface Wa of the substrate W. Consequently, the possibility of the substrate W being contaminated with metal can be reduced.

[0100] As described above, the gas bake unit 30 can perform gas bake treatment on the substrate W while suppressing metal contamination.

[0101] By the way, in the example described above, the gas bake unit 30 heats the substrate W, so the substrate W becomes hot after the gas bake treatment. Therefore, in the example in Figure 3, the charging unit 20 is equipped with a cooler 25 to cool the substrate W. Conversely, the charging unit 20 (specifically the charger 21) is provided in the cooling unit 29, which includes the cooler 25.

[0102] In the example shown in Figure 3, the cooler 25 includes a cooling plate 251. The cooling plate 251 has a plate-like shape and is positioned so that its thickness direction is aligned with the vertical direction. The upper surface of the cooling plate 251 may contact the lower surface of the transport plate 41. The cooling plate 251 is made of a material with high thermal conductivity (e.g., a metal such as aluminum or an aluminum alloy). The upper surface of the cooling plate 251 may be wider than the substrate W in a plan view. The cooler 25 includes a cooling source (not shown) for cooling the cooling plate 251. The cooling source includes, for example, an internal flow path of the cooling plate 251 through which a refrigerant flows, refrigerant piping connected to the internal flow path, and a heat pump unit provided in the refrigerant piping for cooling the refrigerant. Alternatively, the cooling source may include a Peltier element provided on the cooling plate 251. The cooling source is controlled by the control unit 90.

[0103] <Example of operation of the dry processing unit> Figure 5 is a flowchart illustrating an example of the operation of the dry processing unit 121D. This flowchart is executed by the control unit 90 controlling the dry processing unit 121D according to a predetermined procedure. First, the second transport unit 122 transports the substrate W into the charging unit 20 (step S1: transport process). As a result, the substrate W is placed on the transport plate 41. Organic matter is present on the first main surface Wa (in this case, the top surface) of the substrate W. For example, hydrophobic treatment by the wet processing unit 121W forms hydrophobic groups (organic matter) on the first main surface Wa of the substrate W.

[0104] Next, the charging unit 20 positively charges the first main surface Wa of the substrate W (Step S2: Charging process). Figure 6 is a schematic diagram showing an example of the state of the charging unit 20 in Step S2. The control unit 90 activates the first ionizer 21A. As a result, the first ionizer 21A generates positive ions, which are released from the outlet toward the first main surface Wa of the substrate W. In the example in Figure 6, the supply range of positive ions from the first ionizer 21A is schematically shown by a dashed line, and the charged state of the first main surface Wa of the substrate W is schematically shown by a boxed "+".

[0105] In the example shown in Figure 6, the cations flow in a manner that spreads out as they move away from the first ionizer 21A, and are supplied to the entire surface of the first main surface Wa of the substrate W. As a result, the entire surface of the first main surface Wa of the substrate W becomes positively charged. When the first main surface Wa of the substrate W is sufficiently charged, the control unit 90 stops the first ionizer 21A. As an example, the control unit 90 stops the first ionizer 21A when a predetermined charging time has elapsed since the start of operation of the first ionizer 21A. The control unit 90 measures the elapsed time using a timer circuit (not shown). The charging time is set in advance so that the potential of the first main surface Wa of the substrate W is within a predetermined range. The minimum value in the potential distribution of the first main surface Wa of the substrate W after charging may be, for example, 1V or more, 5V or more, 10V or more, or 15V or more. The maximum value in the potential distribution of the first main surface Wa of the substrate W after charging may be, for example, 50V or less.

[0106] Next, the transport unit 40 transports the substrate W from the charging unit 20 to the gas bake unit 30 (step S3: local transport process). Since the contact portion of the transport plate 41 of the transport unit 40 is formed of an insulating material, the transport unit 40 can transport the substrate W to the gas bake unit 30 while maintaining its charged state. As an example, first, the opening / closing drive unit 313 opens the processing chamber 31, the transport unit 40 moves the substrate W directly above the lifting pins 36, and the pin drive unit 361 raises the multiple lifting pins 36 to the second pin upper position. As a result, the substrate W is lifted by the multiple lifting pins 36. Then, the transport plate 41 moves to the outside of the processing chamber 31. The transport plate 41 has a shape that does not collide with the lifting pins 36. Then, the pin drive unit 361 lowers the multiple lifting pins 36 to the second lower position. As a result, the substrate W is placed on the substrate placement section 32. Since the contact portion of the lifting pin 36 is made of an insulating material, the lifting pin 36 can place the substrate W on the substrate placement portion 32 while maintaining the charged state of the substrate W. The opening / closing drive unit 313 then closes the processing chamber 31. Since the contact portion of the substrate placement portion 32 is made of an insulating material, the substrate placement portion 32 can support the substrate W while maintaining the charged state of the substrate W.

[0107] Next, the gas bake unit 30 heats the substrate W while supplying a processing gas (ozone gas) to the substrate W (step S4: gas bake process). Specifically, first, the control unit 90 heats the substrate W with the heater 33. When the temperature of the substrate W reaches a temperature suitable for the gas bake process, the control unit 90 generates ozone gas in the ozone generator 344 and opens the supply valve 343 and the discharge valve 372. As a result, the ozone gas flows into the processing chamber 31 through the supply pipe 341. Figure 7 is an enlarged view showing an example of the gas bake unit 30 in step S4. The ozone gas acts on the inner wall of the supply pipe 341, which can cause metal ions (manganese ions in Figure 7) to flow out from the inner wall of the supply pipe 341. Also, the ozone gas acts on the inner wall of the processing chamber 31, which can cause metal ions (manganese ions in Figure 7) to flow out from the inner wall of the processing chamber 31. Ozone gas and metal ions flow through the through-hole 35a of the rectifier plate 35 toward the first main surface Wa of the substrate W.

[0108] Ozone gas acts on the first main surface Wa of the substrate W, oxidizing and removing organic matter from the first main surface Wa of the substrate W, and flows into the discharge pipe 371 along with by-reactants. On the other hand, metal ions repel the positively charged first main surface Wa of the substrate W. Therefore, the metal ions do not come very close to the first main surface Wa of the substrate W and flow into the discharge pipe 371.

[0109] When organic matter is sufficiently removed from the first main surface Wa of the substrate W, the control unit 90 stops the heater 33 and the ozone generator 344 and closes the supply valve 343. For example, the control unit 90 stops the heater 33 and the ozone generator 344 and closes the supply valve 343 when a predetermined processing time has elapsed since the start of ozone gas supply. Next, the gas bake unit 30 may supply an inert gas such as nitrogen gas into the processing chamber 31 by an inert gas supply unit (not shown). This allows the ozone gas to be discharged from the processing chamber 31.

[0110] Next, the transport unit 40 transports the substrate W from the gas bake unit 30 to the charging unit 20 (Step S5: Local transport process). Specifically, the opening / closing drive unit 313 opens the processing chamber 31, and the lifting pin 36 lifts the substrate W from the substrate placement section 32. Then, the transport unit 40 receives the substrate W from the lifting pin 36 and moves the transport plate 41 onto the cooling plate 251.

[0111] Next, the charging unit 20 cools the substrate W (step S6: cooling process). Specifically, the control unit 90 activates the cooler 25. This cools the substrate W. When the substrate W is sufficiently cooled, the control unit 90 stops the cooler 25. For example, the control unit 90 stops the cooler 25 when a predetermined cooling time has elapsed since the start of operation of the cooler 25.

[0112] Next, the second transport unit 122 unloads the substrate W from the charging unit 20 (Step S7: Unloading process).

[0113] As described above, the charging unit 20 positively charges the first main surface Wa of the substrate W, and then the gas bake unit 30 performs the gas bake treatment on the substrate W. In other words, the gas bake unit 30 performs the gas bake treatment on the substrate W while the first main surface Wa of the substrate W is positively charged. Although this gas bake treatment involves the generation of metal ions in the processing chamber 31, since metal ions are cations, they repel the positively charged first main surface Wa of the substrate W. Therefore, the gas bake unit 30 can perform the gas bake treatment on the substrate W while reducing the possibility of metal contamination of the substrate W.

[0114] Furthermore, in the above example, ozone gas is supplied as the processing gas. The highly reactive ozone gas allows for more efficient oxidation and removal of organic matter from the first main surface Wa of the substrate W. On the other hand, the highly reactive ozone gas increases the risk of metal ions flowing out from the inner walls of the processing chamber 31 and the supply pipe 341. However, since these metal ions repel the first main surface Wa of the substrate W, the possibility of metal contamination during the oxidation and removal of organic matter is low.

[0115] Furthermore, in the example described above, the charger 21 includes a first ionizer 21A. The first ionizer 21A can positively charge the first main surface Wa of the substrate W by supplying positive ions. Therefore, compared to the case where the substrate W is charged by inductive polarization, the charged state of the substrate W can be maintained even after the operation of the first ionizer 21A has finished.

[0116] Furthermore, in the example described above, the first ionizer 21A is located outside the processing chamber 31. Therefore, even if the first ionizer 21A contains metal, it will not function as a metal source within the processing chamber 31. Consequently, the possibility of metal contamination of the substrate W can be further reduced.

[0117] Furthermore, in the example described above, the dry processing unit 121D includes a charging unit 20 and a gas bake unit 30. In other words, the charging unit 20 is provided in a one-to-one relationship with the gas bake unit 30. Therefore, the dry processing unit 121D can charge the substrate W with the charging unit 20 immediately before processing by the gas bake unit 30 without causing any waiting time for charging. In other words, the gas bake unit 30 can perform the gas bake process quickly after the charging process by the charging unit 20.

[0118] <Another example> In the example described above, the charger 21, represented by the first ionizer 21A, is located outside the processing chamber 31, but this is not necessarily the case. For example, the first ionizer 21A may be located inside the processing chamber 31. Even in this case, the charging unit 20 performs a charging treatment on the substrate W inside the processing chamber 31, and then the gas bake unit 30 performs a gas bake treatment on the substrate W inside the processing chamber 31 while the substrate W is charged. This allows the gas bake unit 30 to perform the gas bake treatment while reducing the possibility of metal contamination.

[0119] If the first ionizer 21A includes a blower, the first ionizer 21A may discharge carrier gas from its outlet during the gas bake process. In this case, the possibility of the process gas (ozone gas) in the processing chamber 31 entering the interior of the first ionizer 21A from the outlet can be reduced. Consequently, the possibility of the process gas acting on the metal electrodes in the first ionizer 21A can be reduced. The metal electrodes of the first ionizer 21A may be located far from the outlet; for example, the housing of the processing chamber 31 may be positioned through the processing chamber 31, and the metal electrodes may be located outside the processing chamber 31. This further reduces the possibility of the process gas acting on the metal electrodes.

[0120] Figure 8 is a schematic diagram showing another example of the configuration of the charging unit 20. In the example of Figure 8, the charging unit 20 (charger 21) is provided in the gas bake unit 30. The charging unit 20 applies an electric field (electrostatic field) to the substrate W placed in the substrate placement section 32 to positively charge the first main surface Wa of the substrate W. In the example of Figure 8, the charger 21 includes a conductor 210 and a power supply 211. The conductor 210 is provided below the substrate W in the processing chamber 31. The conductor 210 may be, for example, the main plate B1 of the substrate placement section 32. The conductor 210 is made of, for example, metal. The conductor 210 has a plate-like shape and is provided in a position where its thickness direction is aligned with the vertical direction. The conductor 210 (here, the main plate B1) faces the substrate W with a gap in the vertical direction (see Figure 4).

[0121] Power supply 211 applies a positive potential to conductor 210. Power supply 211 is a DC power supply, its positive terminal is connected to conductor 210 through wiring, and its negative terminal is grounded. Power supply 211 is controlled by control unit 90.

[0122] When a positive potential is applied to the conductor 210, inductive polarization occurs in the substrate W placed near the conductor 210. That is, the second main surface Wb of the substrate W facing the conductor 210 becomes negatively charged, and the first main surface Wa of the substrate W becomes positively charged.

[0123] The charging unit 20 positively charges the first main surface Wa of the substrate W before the gas bake treatment. Specifically, the control unit 90 outputs a voltage to the power supply 211 before the gas bake treatment to positively charge the first main surface Wa of the substrate W. However, since the inductive polarization of the substrate W disappears when the voltage output of the power supply 211 ends, the control unit 90 maintains the voltage output of the power supply 211 during the gas bake treatment. This allows the gas bake unit 30 to perform the gas bake treatment on the substrate W while reducing the possibility of metal contamination. The control unit 90 may maintain the voltage output of the power supply 211 for the entire duration of the gas bake treatment, or it may maintain the voltage output for only a part of that period. Even in this case, the possibility of metal contamination can be reduced for a part of that period.

[0124] Unlike the example in Figure 8, the charging unit 20 may further include a conductive plate (not shown). The plate, together with the conductor 210, sandwiches the substrate W in the vertical direction. The conductive plate may also be located on the ceiling of the processing chamber 31. In this case, the negative terminal of the power supply 211 is connected to the plate via wiring. Since an electric field is generated between the conductor 210 and the plate, the substrate W experiences the same inductive polarization as described above. As a result, the second main surface Wb of the substrate W becomes negatively charged, and the first main surface Wa becomes positively charged.

[0125] <Second Embodiment> The substrate processing apparatus 100 according to the second embodiment differs from the substrate processing apparatus 100 according to the first embodiment in terms of the configuration of the charging unit 20. Figure 9 is a schematic diagram showing an example of the configuration of the charging unit 20 according to the second embodiment. In the second embodiment, the charging unit 20 has not only the function of charging the substrate W, but also the function of de-staticizing the substrate W.

[0126] In the example shown in Figure 9, the charging unit 20 further includes a static eliminator 24 compared to the first embodiment. The static eliminator 24 de-staticizes the first main surface Wa of the substrate W. The static eliminator 24 includes, for example, a second ionizer 24A. The second ionizer 24A is an ionizer for de-staticizing the first main surface Wa of the substrate W. The second ionizer 24A is, for example, a corona discharge type ionizer. The second ionizer 24A de-staticizes the first main surface Wa of the substrate W by supplying negative particles (e.g., electrons) to the first main surface Wa of the substrate W. The second ionizer 24A may supply not only negative particles but also positive ions. For example, the second ionizer 24A may supply positive ions and negative particles to the first main surface Wa of the substrate W in roughly equal amounts. Since the first main surface Wa of the substrate W is positively charged, negative particles (e.g., electrons) are mainly attracted to the first main surface Wa of the substrate W, thereby neutralizing the charge on the first main surface Wa of the substrate W. In other words, the second ionizer 24A can neutralize the charge on the substrate W regardless of its positive or negative charge state.

[0127] In the example shown in Figure 9, the first ionizer 21A and the second ionizer 24A are located above the substrate placement area 22. The first ionizer 21A supplies cations to, for example, the entire surface of the first main surface Wa of the substrate W, and the second ionizer 24A supplies charged particles (including cations and anions) to, for example, the entire surface of the first main surface Wa of the substrate W. The first ionizer 21A and the second ionizer 24A are controlled by the control unit 90.

[0128] Figure 10 is a flowchart showing an example of the operation of the dry processing unit 121D according to the second embodiment. In the example of Figure 10, step S60 is performed instead of step S6, compared to Figure 5. Step S60 is performed after step S5. In step S60, the charging unit 20 cools the substrate W while removing static electricity from the substrate W (cooling and static elimination step). Specifically, the control unit 90 operates the cooler 25 and the second ionizer 24A. In other words, the charging unit 20 performs cooling and static elimination of the substrate W in parallel. To put it another way, the second ionizer 24A operates for at least a portion of the cooling period during which the cooler 25 is operating.

[0129] The control unit 90 stops the second ionizer 24A when the first main surface Wa of the substrate W has been sufficiently discharged. For example, the control unit 90 stops the second ionizer 24A when a predetermined discharge time has elapsed since the start of operation of the second ionizer 24A. The discharge time is set in advance to a degree that the potential of the first main surface Wa of the substrate W is sufficiently reduced. Then, when the cooling and discharge of the substrate W is completed, the second transport unit 122 discharges the substrate W from the dry processing unit 121D (step S7).

[0130] As described above, in the second embodiment, after the gas bake process of the gas bake unit 30 (step S4) is completed, the charging unit 20 discharges static electricity from the substrate W (step S60). For this reason, for example, the second transport unit 122 transports the substrate W after the static electricity has been discharged. Therefore, the possibility of particles adhering to the substrate W due to static electricity can be reduced during transport by the second transport unit 122.

[0131] Furthermore, in the example described above, the charging unit 20 performs static discharge and cooling of the substrate W in parallel. Therefore, the charging unit 20 can discharge and cool the substrate W with higher throughput compared to when these operations are performed at separate times.

[0132] <Third Embodiment> The substrate processing apparatus 100 according to the third embodiment differs from the substrate processing apparatus 100 according to the first embodiment in terms of the configuration of the charging unit 20. Figure 11 is a schematic diagram showing an example of the configuration of the charging unit 20 according to the third embodiment.

[0133] In the example shown in Figure 11, the charging unit 20 further includes a rectifier plate 28 compared to the first embodiment. The rectifier plate 28 is provided between the outlet of the first ionizer 21A and the substrate placement portion 22. The rectifier plate 28 has a plate-like shape and is provided in a position where its thickness direction is aligned with the vertical direction. The rectifier plate 28 is provided at a distance from the outlet of the first ionizer 21A in the vertical direction. The rectifier plate 28 is also provided at a distance from the substrate W in the vertical direction and faces the substrate W. In plan view, the rectifier plate 28 has a shape that is wider than, for example, the substrate W. A plurality of through holes 28a are formed in the rectifier plate 28. The plurality of through holes 28a are arranged two-dimensionally in plan view, for example, in a matrix. The plurality of through holes 28a penetrate the rectifier plate 28 in the vertical direction. The rectifier plate 28 is made of, for example, an insulating material. For example, the rectifier plate 28 is made of an organic resin or ceramics.

[0134] According to the third embodiment, cations flowing out from the outlet of the first ionizer 21A flow through a plurality of through holes 28a of the rectifier plate 28 toward the first main surface Wa of the substrate W. This allows cations to be supplied more uniformly to the first main surface Wa of the substrate W. Therefore, the charging unit 20 can charge the first main surface Wa of the substrate W with greater uniformity. In other words, the charging unit 20 can make the potential distribution of the first main surface Wa of the substrate W more uniform after the charging process.

[0135] <Fourth Embodiment> The substrate processing apparatus 100 according to the fourth embodiment differs from the substrate processing apparatus 100 according to the first embodiment in terms of the configuration of the charging unit 20. Figure 12 is a schematic diagram showing a first example of the configuration of the charging unit 20 according to the fourth embodiment.

[0136] In the example shown in Figure 12, the charging unit 20 further includes a displacement drive unit 27 compared to the first embodiment. The displacement drive unit 27 changes the relative positional relationship between the substrate W, which is placed in the substrate placement section 22, and the first ionizer 21A. Specifically, the lifting drive unit 212 raises or lowers one of the first ionizer 21A and the substrate W relative to the other. As a result, the supply range of cations from the first ionizer 21A moves relative to the first main surface Wa of the substrate W. Therefore, the charging unit 20 can supply cations more uniformly to the first main surface Wa of the substrate W. A specific example of the displacement drive unit 27 will be described below.

[0137] In the example shown in Figure 12, the displacement drive unit 27 includes a rotation drive unit 271. The rotation drive unit 271 rotates the substrate W around a rotation axis Q1. The rotation axis Q1 is an axis that passes through the center of the substrate W on the transport plate 41 and is aligned vertically. In the example shown in Figure 12, the rotation drive unit 271 rotates the transport plate 41 around the rotation axis Q1. As a result, the substrate W supported by the transport plate 41 also rotates around the rotation axis Q1.

[0138] The rotary drive unit 271 includes a drive source such as a motor and a power transmission unit that transmits the driving force of the drive source to the transport plate 41. The power transmission unit may include a shaft. The power transmission unit may also include gears or a belt. The rotary drive unit 271 is controlled by the control unit 90.

[0139] The transport drive unit 42 may be connected to the rotary drive unit 271, and the rotary drive unit 271 and the transport plate 41 may be moved together. With the transport drive unit 42 raising the transport plate 41 and moving it upward away from the cooling plate 251, the rotary drive unit 271 may rotate the transport plate 41 and the substrate W together.

[0140] An example of the operation of the dry processing unit 121D according to the fourth embodiment is the same as in Figure 5. However, in step S2, the control unit 90 operates the first ionizer 21A while driving the displacement drive unit 27 (for example, the rotation drive unit 271). That is, the rotation drive unit 271 rotates the substrate W for at least a portion of the charging period in which the first ionizer 21A supplies positive ions to the substrate W. The rotation drive unit 271 may continue to operate for the entire charging period. This also applies to other specific examples of the displacement drive unit 27 described later.

[0141] The size of the cation supply range by the first ionizer 21A may be greater than the entire surface Wa of the first main surface of the substrate W. In this case, even if there is variation in the distribution of cations within the supply range, the charging unit 20 can supply cations more uniformly to the first main surface Wa of the substrate W. This also applies to other specific examples of the displacement drive unit 27 described later.

[0142] On the other hand, the size of the cation supply range may be smaller than the first main surface Wa of the substrate W. Specifically, the supply range may be a long range greater than or equal to the radius including the center and periphery of the substrate W. As the substrate W rotates, the supply range passes over the entire surface of the first main surface Wa of the substrate W, so the charging unit 20 can supply cations to the entire surface of the first main surface Wa of the substrate W. With this structure, a smaller first ionizer 21A can be used.

[0143] In the example described above, the rotary drive unit 271 rotates the substrate W, but this is not necessarily the only way. The rotary drive unit 271 may also rotate the first ionizer 21A around the rotation axis Q1. In short, the rotary drive unit 271 only needs to rotate one of the first ionizer 21A and the substrate W relative to the other around the rotation axis Q1.

[0144] Figure 13 is a schematic diagram showing a second example of the configuration of the charging unit 20 according to the fourth embodiment. In the example of Figure 13, the displacement drive unit 27 includes an oscillating drive unit 272. The oscillating drive unit 272 rotates (i.e., oscillates) the first ionizer 21A in forward and reverse directions within a predetermined angular range around the rotation axis Q2. The rotation axis Q2 is an axis along the horizontal direction, and in the example of Figure 13, it is an axis extending perpendicular to the plane of the paper. In the example of Figure 13, the first ionizer 21A in the process of rotating is schematically shown by a dashed line.

[0145] The oscillating drive unit 272 includes a drive source such as a motor and a power transmission unit that transmits the driving force of the drive source to the first ionizer 21A. The power transmission unit may include a shaft. The power transmission unit may also include gears or a belt. The oscillating drive unit 272 is provided, for example, on the ceiling of the chamber (not shown) of the charging unit 20.

[0146] In the example shown in Figure 13, the horizontal position of the first ionizer 21A is offset from the center of the substrate W. Specifically, the first ionizer 21A is positioned offset from the center of the substrate W in a horizontal direction perpendicular to the rotation axis Q2.

[0147] The first ionizer 21A may have an elongated shape extending along the rotation axis Q2. That is, the longitudinal direction of the first ionizer 21A may be along the rotation axis Q2. The first ionizer 21A discharges cations diagonally downward from the outlet 21a. The oscillation drive unit 272 rotates the first ionizer 21A around the rotation axis Q2, which changes the depression angle θ of the first ionizer 21A. As a result, the supply range of cations by the first ionizer 21A shifts with respect to the first main surface Wa of the substrate W.

[0148] In step S2, the control unit 90 drives the oscillating drive unit 272 and operates the first ionizer 21A. That is, the oscillating drive unit 272 rotates the first ionizer 21A within a predetermined angular range for at least a portion of the charging period. The oscillating drive unit 272 may rotate the first ionizer 21A within a predetermined angular range along one direction, or it may reciprocate (oscillate) the first ionizer 21A within a predetermined angular range.

[0149] The size of the cation supply range by the first ionizer 21A may be smaller than the first main surface Wa of the substrate W. Specifically, the supply range may be a long range having a longitudinal direction parallel to the rotation axis Q2. The length of this long range in the longitudinal direction is greater than or equal to the diameter of the substrate W. By rotating the first ionizer 21A with the oscillating drive unit 272, the supply range moves in a horizontal direction perpendicular to the rotation axis Q2 on the first main surface Wa of the substrate W. The angular range of the oscillating drive unit 272 is set in advance so that the cation supply range passes over the entire surface of the first main surface Wa of the substrate W. This allows the charging unit 20 to properly charge the entire surface of the first main surface Wa of the substrate W. Moreover, a smaller first ionizer 21A can be used.

[0150] Figure 14 is a schematic diagram showing a third example of the configuration of the charging unit 20 according to the fourth embodiment. In the example of Figure 14, the displacement drive unit 27 includes a movement drive unit 273. The movement drive unit 273 moves the first ionizer 21A along the direction (here, the horizontal direction) along the first main surface Wa of the substrate W. The movement drive unit 273 may also move the first ionizer 21A back and forth within a predetermined range of motion. In the example of Figure 13, the first ionizer 21A in motion is schematically shown by a dashed line. The movement drive unit 273 includes, for example, a drive source such as a motor and a power transmission unit that transmits the driving force of the drive source to the first ionizer 21A. The power transmission unit includes, for example, a ball screw mechanism.

[0151] The moving drive unit 273 moves the first ionizer 21A horizontally, causing the supply range of cations to move horizontally with respect to the first main surface Wa of the substrate W.

[0152] In step S2, the control unit 90 operates the first ionizer 21A while moving it with the moving drive unit 273. During the charging period, the moving drive unit 273 may move the first ionizer 21A in one direction within a predetermined range of movement, or it may move the first ionizer 21A back and forth within a predetermined range of movement.

[0153] The size of the cation supply range by the first ionizer 21A may be smaller than the first main surface Wa of the substrate W. Specifically, the supply range may be a long range having a longitudinal direction perpendicular to the direction of movement of the moving drive unit 273. The length of the long range in the longitudinal direction is greater than or equal to the diameter of the substrate W. As the moving drive unit 273 moves the first ionizer 21A horizontally, the supply range moves along the direction of movement on the first main surface Wa of the substrate W. The movement range of the moving drive unit 273 is set in advance so that the supply range passes over the entire surface of the first main surface Wa of the substrate W. This allows the charging unit 20 to properly charge the entire surface of the first main surface Wa of the substrate W. Moreover, a smaller first ionizer 21A can be used.

[0154] Figure 15 is a schematic diagram showing a fourth example of the configuration of the charging unit 20 according to the fourth embodiment. In the example of Figure 15, the displacement drive unit 27 includes a transport drive unit 42. The transport drive unit 42 moves the transport plate 41 and the substrate W together in a direction along the first main surface Wa of the substrate W (in this case, the horizontal direction).

[0155] The first ionizer 21A is provided in the following position. Specifically, the first ionizer 21A is provided in a position where the first main surface Wa of the substrate W can cross the supply range of the first ionizer 21A when the transport unit 40 transports the substrate W to the gas bake unit 30. In other words, the first ionizer 21A supplies cations to a portion of the transport path of the substrate W. The transport path here refers to the trajectory of the substrate W moving between the charging unit 20 and the gas bake unit 30. The first ionizer 21A may be provided in a position where it can supply cations to a portion of the transport path that extends horizontally. As shown in Figure 15, the first ionizer 21A may be provided above the transport path and opposite the transport path in the vertical direction. In the example in Figure 15, the first ionizer 21A is located between the cooling plate 251 and the processing chamber 31 in a plan view.

[0156] The supply range of cations from the first ionizer 21A may be smaller than the first main surface Wa of the substrate W. The supply range may be a long range with the longitudinal direction perpendicular to the plane of the paper in Figure 15. In other words, the supply range may be a long range having a longitudinal direction parallel to the width direction of the portion of the transport path that extends horizontally. The length of the long range in the longitudinal direction is greater than or equal to the diameter of the substrate W. The transport drive unit 42 moves the transport plate 41 and the substrate W horizontally, so that the substrate W passes directly beneath the first ionizer 21A. In the example in Figure 15, a portion of the transport plate 41 and the substrate W during transport is schematically shown by a dashed line. This movement supplies cations to the entire surface of the first main surface Wa of the substrate W. As a result, the charging unit 20 can properly charge the entire surface of the first main surface Wa of the substrate W. Moreover, a smaller first ionizer 21A can be used.

[0157] In the fourth example of the fourth embodiment, steps S2 and S3 are performed in parallel. That is, the control unit 90 operates the first ionizer 21A while the transport drive unit 42 moves the transport plate 41 and the substrate W together.

[0158] The transport drive unit 42 may move the transport plate 41 and the substrate W so that they pass directly under the first ionizer 21A only once, or it may move them back and forth within a predetermined range of motion directly under the first ionizer 21A. The predetermined range of motion is set in advance so that the supply range passes over the entire surface of the first main surface Wa of the substrate W.

[0159] Furthermore, the fourth embodiment can be applied to the second ionizer 24A of the second embodiment. In other words, a displacement drive unit (not shown) that changes the relative positional relationship between the substrate W and the second ionizer 24A may be provided. This displacement drive unit may be the same as the displacement drive unit 27 described above.

[0160] <Fifth Embodiment> The substrate processing apparatus 100 according to the fifth embodiment differs from the substrate processing apparatus 100 according to the first embodiment in terms of the configuration of the charging unit 20. Figure 16 is a schematic diagram showing a first example of the configuration of the charging unit 20 according to the fifth embodiment.

[0161] In the fifth embodiment, the charger 21 of the charging unit 20 positively charges both the first main surface Wa and the second main surface Wb of the substrate W. In the example of Figure 16, a plurality of lifting pins 26 are positioned above the first pin and support the substrate W. In this state, the entire surface of the first main surface Wa and most of the second main surface Wb of the substrate W are exposed inside the charging unit 20 (inside a chamber not shown). In this state, the charger 21 positively charges both the first main surface Wa and the second main surface Wb of the substrate W.

[0162] In the example shown in Figure 16, the charger 21 further includes a first ionizer 21A, a guide member 23, and a moving drive unit 235. The guide member 23 is a member that guides (directs) positive ions from the first ionizer 21A to the second main surface Wb of the substrate W. The guide member 23 is formed of, for example, an insulating material. For example, ceramics or organic resins can be used as insulating materials. The moving drive unit 235 moves the guide member 23 between a charging position and a standby position, which will be described next, with a plurality of lifting pins 26 supporting the substrate W in the first pin position. The charging position is a position in which a part of the guide member 23 is interposed between the second main surface Wb of the substrate W and the substrate placement portion 32, and the part faces the second main surface Wb of the substrate W at a distance. In the example shown in Figure 16, the guide member 23 stopped in the charging position is shown. The induction member 23, in its charged position, guides positive ions from the first ionizer 21A to the second main surface Wb of the substrate W. The standby position is a position where the induction member 23 does not face the substrate W in the vertical direction, for example, a position radially outward from the substrate W. The standby position is a position where the induction member 23 does not interfere with the transport path of the substrate W. The moving drive unit 235 includes, for example, a drive source such as a motor and a power transmission unit that transmits the driving force of the drive source to the induction member 23. The power transmission unit includes, for example, a ball screw mechanism.

[0163] In the example shown in Figure 16, the guide member 23 includes a face portion 231 and an inclined portion 232. The face portion 231 is the portion that partially faces the second main surface Wb of the substrate W when the guide member 23 is in the charged position. In other words, the face portion 231 is partially located between the substrate W and the transport plate 41. The surface of the face portion 231 that faces the second main surface Wb of the substrate W (in this case, the top surface) is, for example, a horizontal flat surface. The face portion 231 has, for example, a plate-like shape and is provided in a position where its thickness direction is aligned with the vertical direction. The face portion 231 faces the second main surface Wb of the substrate W in a region that does not collide with the multiple lifting pins 26. That is, the face portion 231 does not come into contact with the lifting pins 26. Also, when the guide member 23 is in the charged position, the face portion 231 protrudes outward from the substrate W in a plan view. The face portion 231 may have, for example, a rectangular shape in a plan view.

[0164] The inclined portion 232 extends from the end of the opposing portion 231 that protrudes outward from the substrate W. The upper surface of the inclined portion 232 is inclined so as it moves upward, it moves away horizontally from the substrate W. The inclined portion 232 is located outside the substrate W when the induction member 23 is in the charged position. The upper end of the inclined portion 232 is located above the first main surface Wa of the substrate W. The upper end of the inclined portion 232 may be located below the first ionizer 21A. In the example of Figure 16, the inclined portion 232 has a plate-like shape. The inclined portion 232 may have, for example, a rectangular shape in plan view.

[0165] The guide member 23 may have an elongated shape extending in the direction perpendicular to the plane of the paper in Figure 16. Figure 17 is a schematic plan view showing an example of the configuration of the guide member 23. In the example of Figure 17, the opposing portion 231 is adjacent to the inclined portion 232 in the left-right direction of the paper, and the longitudinal direction of the guide member 23 is along the up-down direction of the paper. In other words, the longitudinal direction of the guide member 23 is perpendicular to the direction in which the opposing portion 231 and the inclined portion 232 are adjacent. The length of the guide member 23 in the longitudinal direction is greater than or equal to the diameter of the substrate W.

[0166] As shown in Figure 16, the first ionizer 21A supplies cations to the first main surface Wa of the substrate W and to the portion of the substrate W outside the first main surface Wa (specifically, the upper surface of the induction member 23). For example, in a plan view, the cation supply range of the first ionizer 21A spans both the first main surface Wa of the substrate W and the upper surface of the induction member 23. The first ionizer 21A discharges cations and carrier gas toward the substrate W and the induction member 23. The supply of cations to the first main surface Wa of the substrate W causes the first main surface Wa of the substrate W to become positively charged.

[0167] Meanwhile, the carrier gas and cations flowing in the portion of the substrate W outside the first main surface Wa are supplied to the upper surface of the guide member 23. The cations supplied to the upper surface of the guide member 23 flow along the upper surface of the inclined portion 232 together with the carrier gas, and then flow between the opposing portion 231 and the second main surface Wb of the substrate W. In other words, the cations are guided to the second main surface Wb of the substrate W. The cations flow between the second main surface Wb of the substrate W and the opposing portion 231, and then flow between the second main surface Wb of the substrate W and the upper surface 22a of the transport plate 41. As a result, the cations act on the entire surface of the second main surface Wb of the substrate W, and the second main surface Wb of the substrate W also becomes positively charged.

[0168] The distance between the upper surface of the opposing portion 231 and the second main surface Wb of the substrate W is narrower than the distance between the upper surface 22a of the transport plate 41 and the second main surface Wb of the substrate W. The distance between the transport plate 41 and the substrate W may be set to 50 mm or less, 30 mm or less, or 10 mm or less. This makes it easier to supply cations to the second main surface Wb of the substrate W.

[0169] An example of the operation of the dry processing unit 121D according to the fifth embodiment is the same as in Figure 5. However, in step S2, the control unit 90 moves the induction member 23 to the charged position with the moving drive unit 235 while the multiple lifting pins 26 are supporting the substrate W. For example, the lifting pins 26 receive the substrate W from the second transport unit 122 at the position above the first pin. As a result, the substrate W is supported by the lifting pins 26. Next, the control unit 90 moves the induction member 23 to the charged position with the moving drive unit 235. Next, the control unit 90 activates the first ionizer 21A. The first ionizer 21A supplies positive ions to both the first main surface Wa of the substrate W and the upper surface of the induction member 23. As a result, both the first main surface Wa and the second main surface Wb of the substrate W become positively charged, as described above.

[0170] When both the first main surface Wa and the second main surface Wb of the substrate W are sufficiently positively charged, the control unit 90 stops the first ionizer 21A, moves the induction member 23 to the standby position via the moving drive unit 235, and lowers the multiple lifting pins 26 via the pin drive unit 261. As a result, the substrate W having the positively charged first main surface Wa and second main surface Wb is placed on the transport plate 41.

[0171] Next, the transport unit 40 transports the substrate W to the gas bake unit 30 while maintaining the charged state of the substrate W, and the substrate placement section 32 of the gas bake unit 30 supports the substrate W while maintaining the charged state of the substrate W (step S3). Specifically, the substrate placement section 32 supports the second main surface Wb of the substrate W with a plurality of support members P1 protruding from the upper surface of the main plate B1. Therefore, the upper surface of the main plate B1 corresponds to the opposing surface that faces the second main surface Wb of the substrate W with a gap in between. In other words, a gap is formed between the second main surface Wb of the substrate W and the main plate B1 (see also Figure 4).

[0172] Next, the gas bake unit 30 performs a gas bake treatment (step S4). During this gas bake treatment, metal ions in the treatment chamber 31 may flow between the second main surface Wb of the substrate W and the main plate B1. However, since the second main surface Wb of the substrate W is positively charged, the metal ions are repelled from the second main surface Wb of the substrate W. Therefore, the possibility of the second main surface Wb of the substrate W being contaminated by metal can also be reduced. After that, steps S5 to S7 are performed in this order.

[0173] As described above, in the fifth embodiment, the charging unit 20 positively charges the first main surface Wa and the second main surface Wb of the substrate W, and the gas bake unit 30 maintains the charge of the substrate W while performing the gas bake treatment. Therefore, the gas bake unit 30 can perform the gas bake treatment on the substrate W while suppressing metal contamination of both the first main surface Wa and the second main surface Wb of the substrate W.

[0174] Furthermore, in the above example, a substrate placement portion 22 is provided to support the second main surface Wb of the substrate W. In this state, it is difficult to supply positive ions to the second main surface Wb of the substrate W. However, in the above example, the lifting pin 26 lifts the substrate W and the induction member 23 moves to the charged position, at which point the first ionizer 21A supplies positive ions. As a result, the charging unit 20 can more appropriately positively charge the first main surface Wa and the second main surface Wb of the substrate W.

[0175] In the example described above, both the first main surface Wa of the substrate W and the upper surface of the induction member 23 are included within the supply range of the first ionizer 21A. However, if a rocking drive unit 272 or a moving drive unit 273 is provided to displace the first ionizer 21A, the supply range of cations may be set to be smaller. For example, the supply range of cations may be a long range having a longitudinal direction parallel to the longitudinal direction of the induction member 23 (see Figure 17). The length of the longitudinal direction of the supply range of cations is greater than or equal to the diameter of the substrate W. The rocking drive unit 272 or the moving drive unit 273 displaces the first ionizer 21A so that the supply range of cations moves along its short direction (left-right direction in Figure 17).

[0176] More specifically, the oscillation drive unit 272 or the movement drive unit 273 displaces the first ionizer 21A between a first position where the cation supply range is located on the induction member 23 and a second position where the cation supply range is located on the first main surface Wa of the substrate W. The second position is where the supply range is located on the end of the first main surface Wa of the substrate W opposite to the first position. When the first ionizer 21A supplies cations at the first position, the induction member 23 guides the cations to the second main surface Wb of the substrate W. This makes the second main surface Wb of the substrate W positively charged. Furthermore, when the first ionizer 21A supplies cations while moving from the first position to the second position, the first main surface Wa of the substrate W can also be positively charged.

[0177] Figure 18 is a schematic diagram showing a second example of the configuration of the charging unit 20 according to the fifth embodiment. In the example of Figure 18, the first ionizer 21A is provided at a position adjacent to the substrate W in the horizontal direction, with a plurality of lifting pins 26 supporting the substrate W. The outlet 21a of the first ionizer 21A may face the side surface of the substrate W in the horizontal direction. The first ionizer 21A is provided so as to avoid the transport path of the substrate W.

[0178] The vertical length of the outlet 21a of the first ionizer 21A may be greater than the thickness of the substrate W. The first ionizer 21A may discharge cations and carrier gas from the outlet 21a. Some of the cations discharged from the outlet 21a of the first ionizer 21A may flow along the first main surface Wa and the second main surface Wb of the substrate W. This allows the first main surface Wa and the second main surface Wb of the substrate W to be positively charged.

[0179] As shown in Figure 18, the charger 21 may further include a lifting drive unit 212. The lifting drive unit 212 changes the relative positional relationship between the substrate W, supported by the lifting pins 26, and the first ionizer 21A. In the example of Figure 18, the lifting drive unit 212 raises and lowers the first ionizer 21A. The lifting drive unit 212 raises and lowers the first ionizer 21A between the upper position and the lower position, which are described below. The upper position is, for example, a position where the center of the outlet 21a of the first ionizer 21A is above the first main surface Wa of the substrate W, and supplies more cations to the first main surface Wa of the substrate W. The lower position is, for example, a position where the center of the outlet 21a of the first ionizer 21A is below the second main surface Wb of the substrate W, and supplies more cations to the second main surface Wb of the substrate W. In the example shown in Figure 18, the first ionizer 21A, which stops at the upper and lower positions respectively, is schematically shown by dashed lines. The lifting drive unit 212 includes a drive source, such as a motor, and a power transmission unit that transmits the driving force of the drive source to the first ionizer 21A. The power transmission unit includes, for example, a ball screw mechanism. The lifting drive unit 212 is controlled by the control unit 90.

[0180] In step S2, the control unit 90 may operate the first ionizer 21A and have the lifting drive unit 212 move the first ionizer 21A in one direction from one upper position to the other. Alternatively, the control unit 90 may have the lifting drive unit 212 move the first ionizer 21A back and forth between the upper position and the lower position. This allows the first main surface Wa and the second main surface Wb of the substrate W to be positively charged more appropriately.

[0181] Furthermore, the fifth embodiment can be applied to the second ionizer 24A of the second embodiment. In other words, the second ionizer 24A may supply ions to the first main surface Wa and the second main surface Wb of the substrate W to remove static electricity from the first main surface Wa and the second main surface Wb of the substrate W.

[0182] <Sixth Embodiment> The substrate processing apparatus 100 according to the sixth embodiment differs from the substrate processing apparatus 100 according to the first embodiment in terms of the configuration of the charging unit 20. Figure 19 is a schematic diagram showing a first example of the configuration of the charging unit 20 according to the sixth embodiment. Compared to the first embodiment, the charging unit 20 further includes a charging sensor 285. The charging sensor 285 is, for example, a surface potential sensor. For example, a surface potential sensor has a sensing electrode and measures the potential of the object to be measured by detecting the induced potential generated in the sensing electrode according to the potential of the object to be measured. The charging sensor 285 measures the potential of the first main surface Wa of the substrate W placed on the substrate placement section 22 and outputs an electrical signal indicating the measurement result to the control unit 90. Hereinafter, the potential measured by the charging sensor 285 will also be called the measured potential.

[0183] In the example shown in Figure 19, the charge sensor 285 is positioned to face a portion of the substrate W in the vertical direction. For example, the charge sensor 285 measures the potential of a portion (measurement area) of the first main surface Wa of the substrate W.

[0184] The charging unit 20 may include a moving drive unit (not shown) for moving the charging sensor 285. The moving drive unit may move the charging sensor 285 between a measurement position and a standby position, which will be described below. The measurement position is a position where the charging sensor 285 faces the first main surface Wa of the substrate W in the vertical direction. The standby position is a position where the charging sensor 285 does not face the first main surface Wa of the substrate W in the vertical direction, for example, a position radially outside the substrate W. The standby position is also a position that does not interfere with the transport path of the substrate W. The moving drive unit includes a drive source such as a motor and a power transmission unit that transmits the driving force of the drive source to the charging sensor 285. The power transmission unit includes, for example, a ball screw mechanism. With the moving drive unit having moved the charging sensor 285 to the standby position, the first ionizer 21A may supply positive ions to the first main surface Wa of the substrate W. This makes it possible to avoid the positive ions being blocked by the charging sensor 285. On the other hand, when measuring the potential of the substrate W, the moving drive unit may move the charge sensor 285 to the measurement position.

[0185] An example of the operation of the dry processing unit 121D according to the sixth embodiment is the same as in Figure 5. However, a specific example of the operation in step S2 is different. Figure 20 is a flowchart of the first example of the operation of the charging unit 20 according to the sixth embodiment. The flowchart in Figure 20 corresponds to a specific example of the operation in step S2. First, the control unit 90 activates the first ionizer 21A (step S21). As a result, the first ionizer 21A discharges positive ions from the outlet 21a and supplies the positive ions to the first main surface Wa of the substrate W. Here, the supply range of positive ions by the first ionizer 21A is wider than the first main surface Wa of the substrate W. The first ionizer 21A supplies positive ions to the first main surface Wa of the substrate W for a predetermined charging time. In this step S21, the charging sensor 285 may be in a standby position.

[0186] Next, the charge sensor 285 measures the potential of the first main surface Wa of the substrate W and outputs the measurement result to the control unit 90 (step S22). In step S22, the charge sensor 285 is positioned at the measurement location.

[0187] Next, the control unit 90 determines whether the measured potential is within a predetermined charging range (step S23). As a specific example, the control unit 90 determines whether the measured potential is above a predetermined charging reference value. The charging reference value is set in advance to a value (for example, several tens of volts) that allows the substrate W to sufficiently repel metal ions during the gas bake process. When the measured potential is above the predetermined charging reference value, the control unit 90 determines that the charging process has been properly completed and proceeds with the processes from step S3 onward.

[0188] On the other hand, when the measured potential is less than a predetermined charge reference value, the control unit 90 performs abnormal processing (step S24). As an example of abnormal processing, the control unit 90 may interrupt processing on the substrate W, or it may notify the user of error information by an unillustrated notification unit. The notification unit includes, for example, at least one of a display and an audio output unit. The display includes, for example, a liquid crystal display. The audio output unit includes, for example, a speaker or a buzzer.

[0189] As described above, in the sixth embodiment, the charge sensor 285 measures the potential of the first main surface Wa of the substrate W and outputs the measurement result to the control unit 90. Therefore, the control unit 90 can confirm that the substrate W is charged to a degree that metal contamination can be appropriately reduced before the gas bake treatment. Consequently, metal contamination of the substrate W can be more reliably reduced during the gas bake treatment by the gas bake unit 30. Conversely, the dry treatment unit 121D does not perform the gas bake treatment on the substrate W when the first main surface Wa of the substrate W is not sufficiently positively charged. Therefore, unnecessary gas bake treatment in the gas bake unit 30 can be avoided. In addition, the user can recognize abnormalities through the notification unit.

[0190] Figure 21 is a flowchart showing a second example of the operation of the charging unit 20 in the sixth embodiment. The flowchart in Figure 21 also corresponds to a specific example of the operation in step S2. In the example in Figure 21, steps S21, S22, and S23 are performed in this order. However, in the example in Figure 21, if the measured potential in step S23 is less than a predetermined charging reference value, the control unit 90 continues the operation of the first ionizer 21A in step S21. In other words, when the charging of the first main surface Wa of the substrate W is still insufficient, the charging unit 20 continues to supply positive ions by the first ionizer 21A. This allows the potential (amount of charge) of the first main surface Wa of the substrate W to be further increased.

[0191] On the other hand, if the measured potential in step S23 is equal to or greater than the charging reference value, the control unit 90 stops the first ionizer 21A and executes the processing from step S3 onward.

[0192] As described above, in the example shown in Figure 21, the charging process is continued when charging is insufficient. Therefore, the charging unit 20 can more reliably charge the first main surface Wa of the substrate W with a sufficient amount of charge.

[0193] However, even after multiple steps S21, it is conceivable that the first main surface Wa of the substrate W may not be sufficiently charged due to abnormalities or other reasons. In such cases, the control unit 90 may measure the number of times in step S23 that the measured potential is determined to be below the charging reference value, and perform abnormality processing (step S24) when the number exceeds a predetermined reference value (for example, 3 times).

[0194] Figure 22 is a schematic diagram showing a second example of the configuration of the charging unit 20 according to the sixth embodiment. In the example of Figure 22, the charging unit 20 includes a plurality of charging sensors 285. The plurality of charging sensors 285 each measure the potential at different measurement positions on the first main surface Wa of the substrate W. For example, the plurality of charging sensors 285 may measure the potential at different radial positions on the first main surface Wa of the substrate W.

[0195] An example of the operation of the charging unit 20 according to the second example of the sixth embodiment is the same as in Figure 20 or Figure 21. However, in step S22, all of the multiple charging sensors 285 measure the potential. Therefore, the control unit 90 can obtain the measured potential at different measurement locations.

[0196] In step S23, the control unit 90 may determine for each charging sensor 285 whether the measured potential is equal to or greater than the charging reference value. If all measured potentials are equal to or greater than the charging reference value, the control unit 90 determines that the substrate W is sufficiently charged and proceeds with the processing from step S3 onward.

[0197] On the other hand, if at least one of the measured potentials is below the charging reference value, the control unit 90 may perform abnormal processing (step S24) or continue the charging process (step S21).

[0198] In the example shown in Figure 22, the charging unit 20 includes a displacement drive unit 27. Here, the size of the cation supply area by the first ionizer 21A is assumed to be smaller than the first main surface Wa of the substrate W. For example, a rocking drive unit 272 or a moving drive unit 273 can be applied to the displacement drive unit 27. In this case, in the initial step S21, the control unit 90 operates the first ionizer 21A and causes the displacement drive unit 27 to displace the first ionizer 21A, thereby supplying cations to the entire surface of the first main surface Wa of the substrate W.

[0199] Then, in step S23, if the measured potential is less than the charge reference value, the control unit 90 performs step S21 again. In this second step S21, the control unit 90 may control the displacement drive unit 27 to supply cations only to the vicinity of the measurement area of ​​the charge sensor 285 that measured a measured potential less than the charge reference value. In other words, the first ionizer 21A releases cations toward the area with insufficient charge and does not release cations toward at least a portion of the area with sufficient charge. This makes it possible to increase the charge of the undercharged area of ​​the first main surface Wa of the substrate W while reducing unnecessary operation of the first ionizer 21A. Therefore, the power consumption of the first ionizer 21A can be reduced. In other words, the charging unit 20 can more reliably positively charge the first main surface Wa of the substrate W with low power consumption.

[0200] In the example shown in Figure 22, the charging unit 20 also includes a rotary drive unit 271. The first ionizer 21A may spot-irradiate the first main surface Wa of the substrate W with cations. In this case, the displacement drive unit 27 may displace the first ionizer 21A so that the spot-shaped supply range of cations moves radially along the first main surface Wa of the substrate W. In this case, in the initial step S21, the control unit 90 may rotate the substrate W with the rotary drive unit 271 while simultaneously moving the supply range along the radial direction of the substrate W with the displacement drive unit 27. This allows cations to be supplied to the entire surface of the first main surface Wa of the substrate W in step S21.

[0201] In step S22, the multiple charge sensors 285 each measure different radial positions on the first main surface Wa of the substrate W. Then, in step S23, if the measured potential is less than the charge reference value, the control unit 90 may control the displacement drive unit 27 in step S21 so that the first ionizer 21A releases cations toward the same radial position as the measurement area of ​​the charge sensor 285 that measured a measured potential below the charge reference value. The rotation drive unit 271 then rotates the substrate W in this state. As a result, the first ionizer 21A can supply cations to the annular region of the first main surface Wa of the substrate W that includes the position where the charge amount is insufficient. Therefore, the charge amount of the annular region of the first main surface Wa of the substrate W that has an insufficient charge amount can be increased. Conversely, since the first ionizer 21A does not release cations toward the annular region that includes the position where a measured potential of a value above the charge reference value is measured, the power consumption of the first ionizer 21A can be reduced.

[0202] Figure 23 is a schematic diagram showing a third example of the configuration of the charging unit 20 according to the sixth embodiment. In the example of Figure 23, the charging unit 20 further includes a moving drive unit 286. The moving drive unit 286 changes the relative positional relationship between the substrate W placed on the substrate placement section 22 and the charging sensor 285, thereby moving the measurement position on the first main surface Wa of the substrate W. For example, the moving drive unit 286 may move the charging sensor 285 one-dimensionally along the radial direction of the substrate W, or it may move it two-dimensionally in the horizontal plane. The moving drive unit 286 includes a drive source such as a motor and a power transmission unit that transmits the driving force of the drive source to the charging sensor 285. The power transmission unit includes, for example, a ball screw mechanism.

[0203] An example of the operation of the charging unit 20 according to the third example of the sixth embodiment is the same as in Figure 20 or Figure 21. However, in step S22, the control unit 90 controls the movement drive unit 286 so that the measurement position moves on the first main surface Wa of the substrate W. The charging sensor 285 measures the potential at each measurement position and outputs the measurement result to the control unit 90. As a result, the control unit 90 can acquire the potential distribution of the first main surface Wa of the substrate W in more detail. Therefore, the control unit 90 can grasp the region of the first main surface Wa of the substrate W that is undercharged with higher spatial resolution. Other operations are the same as the charging unit 20 according to the second example of the sixth embodiment.

[0204] Figure 24 is a schematic diagram showing a fourth example of the configuration of the charging unit 20 according to the sixth embodiment. In the example of Figure 24, the charging unit 20 includes a first ionizer 21A and a second ionizer 24A. The second ionizer 24A removes static electricity from the first main surface Wa of the substrate W.

[0205] An example of the operation of the dry processing unit 121D according to the fourth example of the sixth embodiment is the same as in Figure 10. However, a specific example of the operation in step S60 is different.

[0206] Figure 25 is a flowchart showing a first example of the operation of the charging unit 20 according to the fourth example of the sixth embodiment. Figure 25 corresponds to a specific example of the operation of step S60 (cooling and static elimination process) in Figure 10. In Figure 25, the operation related to the cooling of the substrate W is omitted, and an example of the operation related to static elimination is shown.

[0207] First, the control unit 90 activates the second ionizer 24A (step S61). The second ionizer 24A supplies ions (including anions) to the entire surface of the first main surface Wa of the substrate W. As a result, the charge of the substrate W (absolute value of potential) decreases over time. The second ionizer 24A supplies ions to the first main surface Wa of the substrate W for a predetermined static discharge period.

[0208] Next, the charge sensor 285 measures the potential of the first main surface Wa of the substrate W and outputs the measurement result to the control unit 90 (step S62).

[0209] Next, the control unit 90 determines whether the measured potential is within a predetermined static elimination range (step S63). The static elimination range is pre-set to a range in which, for example, almost no particles adhere to the substrate W due to static charge (for example, -1V or more and less than 1V). If the measured potential is outside the static elimination range, the control unit 90 performs abnormal processing (step S64). On the other hand, if the measured potential is within the static elimination range, the control unit 90 determines that the static elimination process has been completed appropriately. If the substrate W has been sufficiently cooled, the control unit 90 performs the process in step S7.

[0210] As described above, in step S62, the charge sensor 285 measures the potential of the first main surface Wa of the substrate W. Therefore, the control unit 90 can confirm that the substrate W has been discharged to a degree that, for example, particle adhesion can be suppressed, before the second transport unit 122 discharges it. Conversely, if the substrate W cannot be sufficiently discharged, the user can recognize the abnormality through the notification unit.

[0211] Figure 26 is a flowchart showing a second example of the operation of the charging unit 20 in the fourth example of the sixth embodiment. The flowchart in Figure 26 also corresponds to a specific example of the operation of step S60. In the example in Figure 26, steps S61, S62, and S63 are performed in this order. However, in the example in Figure 26, if the measured potential is outside the predetermined static discharge range in step S63, the control unit 90 continues the operation of the second ionizer 24A in step S61. In other words, if the static discharge of the first main surface Wa of the substrate W is still insufficient, the charging unit 20 continues to supply charged particles by the second ionizer 24A. This makes it possible to further reduce the amount of charge on the first main surface Wa of the substrate W.

[0212] On the other hand, if the measured potential in step S63 is within the static elimination range, the first main surface Wa of the substrate W has been sufficiently statically eliminated, so the control unit 90 stops the second ionizer 24A and executes step S7.

[0213] As described above, in the example shown in Figure 26, the static elimination process is continued when static elimination is insufficient. Therefore, the charging unit 20 can more reliably eliminate static electricity from the first main surface Wa of the substrate W.

[0214] However, even after multiple steps S61, it is conceivable that the first main surface Wa of the substrate W may not be sufficiently discharged due to abnormalities or other reasons. In such cases, the control unit 90 may measure the number of times in step S63 that the measured potential is determined to be outside the discharge range, and if this number exceeds a predetermined reference value (for example, 3 times), the control unit 90 may perform abnormality processing (step S64).

[0215] Furthermore, the charging unit 20 may include a plurality of charging sensors 285. Alternatively, the charging unit 20 may include a moving drive unit 286 for moving the charging sensors 285. In this configuration, the control unit 90 can obtain measurement potentials at multiple measurement positions on the first main surface Wa of the substrate W.

[0216] The control unit 90 may continue to operate the second ionizer 24A until all measured potentials fall within a predetermined static elimination range. When the second ionizer 24A discharges both positive ions and negative particles, charged particles corresponding to the potential in the region where static elimination is insufficient are attracted, thereby appropriately reducing the potential in that region.

[0217] <Seventh Embodiment> Figure 27 is a schematic diagram showing a first example of a charging unit 20 according to the seventh embodiment. Figure 27(a) shows a side view of the charging unit 20, and Figure 27(b) shows a top view of the charging unit 20. In the seventh embodiment, the position of the first ionizer 21A will be described. In the example of Figure 27, the first ionizer 21A has a plurality of outlets 21a. All of the plurality of outlets 21a are located offset from the center of the substrate W in a plan view. As a more specific example, in a plan view, all of the outlets 21a are located outside the substrate W. In other words, the outlets 21a of the first ionizer 21A are located so as to avoid the region that is perpendicular to the substrate W placed on the substrate placement portion 22.

[0218] The first ionizer 21A includes a housing 21b. In the example shown in Figure 27, the housing 21b is also provided so as to avoid the area that is perpendicular to the substrate W. The housing 21b of the first ionizer 21A has an elongated shape in plan view. The longitudinal direction of the housing 21b may be parallel, for example, to the tangent line at the position closest to the first ionizer 21A on the periphery of the substrate W.

[0219] The housing 21b is positioned at an angle when viewed along its longitudinal direction (in a side view). Specifically, in a side view, the housing 21b is positioned at an angle such that the end 21c of the housing 21b closer to the circuit board W is lower than the end 21d of the housing 21b further away from the circuit board W.

[0220] The outlet 21a of the first ionizer 21A is formed at the end 21c. The direction of cation outflow from the outlet 21a of the first ionizer 21A is diagonally downward. The cations flow out from the outlet 21a toward the first main surface Wa of the substrate W.

[0221] In the example shown in Figure 27, the multiple outlets 21a are arranged at intervals along the longitudinal direction of the first ionizer 21A. In Figure 27, the supply range of cations from each outlet 21a of the first ionizer 21A is schematically shown by the dashed lines. As shown in Figure 27, the cations spread out as they move away from the outlets 21a and reach the first main surface Wa of the substrate W. In the example shown in Figure 27, the multiple outlets 21a are arranged at a pitch that supplies cations to the entire surface of the first main surface Wa of the substrate W.

[0222] Since cations spread out and flow from the outlet 21a, the distance from each outlet 21a to the first main surface Wa of the substrate W needs to be sufficiently wide in order to supply cations to the first main surface Wa of the substrate W over a sufficient supply area. In the seventh embodiment, the outlet 21a of the first ionizer 21A is located outside the substrate W, and cations flow out from the outlet 21a diagonally downward toward the substrate W. Therefore, the distance between the outlet 21a and the first main surface Wa of the substrate W can be widened while suppressing an increase in the vertical size of the charging unit 20. Consequently, the cations reach the first main surface Wa of the substrate W in a sufficiently spread state. Therefore, the first ionizer 21A can more reliably supply cations to the entire surface of the first main surface Wa of the substrate W.

[0223] In the example shown in Figure 27, the multiple outlets 21a are arranged one-dimensionally along the longitudinal direction of the housing 21b, but they may also be arranged two-dimensionally. Figure 28 is a schematic diagram showing a second example of the configuration of the charging unit 20 according to the seventh embodiment. In the second example of the seventh embodiment, a plurality of first ionizers 21A are provided. In the example shown in Figure 28, two first ionizers 21Aa and a first ionizer 21Ab are provided as the plurality of first ionizers 21A. The first ionizers 21Aa and 21Ab are adjacent to each other in a horizontal arrangement direction perpendicular to the longitudinal direction of the housing 21b. In a plan view, the first ionizers 21Aa and 21Ab are positioned offset to one side in the arrangement direction from the center of the substrate W placed on the substrate placement portion 22. In the example shown in Figure 28, the first ionizer 21Aa is positioned opposite the substrate W in the vertical direction, while the first ionizer 21Ab is positioned not opposite the substrate W in the vertical direction.

[0224] The outlet 21a of the first ionizer 21Aa and the outlet 21a of the first ionizer 21Ab discharge cations diagonally downward. The first ionizer 21Aa is provided such that its cation supply range includes the position on the first main surface Wa of the substrate W that is furthest from the first ionizer 21Aa. The first ionizer 21Ab is provided such that the entire cation supply range by the first ionizer 21Aa and the first ionizer 21Ab includes the first main surface Wa of the substrate W.

[0225] The first ionizer 21Ab can be configured such that all of the imaginary straight lines L1 connecting the center of the outlet 21a of the first ionizer 21Ab to each point on the periphery of the first main surface Wa of the substrate W do not collide with the first ionizer 21Aa. Figure 28 shows the straight line L1 closest to the first ionizer 21Aa. According to this, cations from the first ionizer 21Ab are less likely to collide with the first ionizer 21Aa, so cations can be supplied to the first main surface Wa of the substrate W more efficiently.

[0226] <Eighth Embodiment> In the first to seventh embodiments, the charging unit 20 (specifically, the charger 21) was provided in the cooling unit 29 or the gas bake unit 30. However, the charging unit 20 is not necessarily limited to these. Figure 29 is a schematic diagram showing an example of the configuration of a tower TW of the substrate processing apparatus 100 according to the eighth embodiment. In the example of Figure 29, the tower TW is composed of four dry processing units 121D stacked vertically. Note that the number of dry processing units 121D constituting the tower TW is not limited to four.

[0227] As shown in Figure 29, one of the multiple dry processing units 121D may include a charging unit 20 without including a cooling unit 29 and a gas bake unit 30. In the example in Figure 29, the lowest dry processing unit 121D is formed only of a charging unit 20. The charger 21 of the charging unit 20 includes a first ionizer 21A. Also in the example in Figure 29, the other dry processing units 121D of the tower TW are not provided with charging units 20.

[0228] In this structure, the second transport unit 122 transports the substrate W from the wet processing unit 121W to the charging unit 20. This places the substrate W on the substrate placement section 22 of the charging unit 20. The first ionizer 21A of the charging unit 20 supplies positive ions to the first main surface Wa of the substrate W, thereby positively charging it. Then, the second transport unit 122 transports the substrate W from the charging unit 20 to the cooling unit 29 (transport unit 40). During this transport, the charged state of the substrate W must be maintained. Therefore, at least the contact portion of the handle of the second transport unit 122 with the substrate W, and at least the contact portion of the lifting pin 26 with the substrate W, are formed from an insulating material. For example, ceramics or organic resins can be used as the insulating material. This allows the second transport unit 122 to transport the substrate W from the charging unit 20 to the cooling unit 29 (transport unit 40) while maintaining the charged state of the substrate W. Then, the transport unit 40 transports the substrate W to the gas bake unit 30, and the gas bake unit 30 performs the gas bake treatment on the substrate W. In this way, the gas bake unit 30 can perform the gas bake treatment while suppressing metal contamination.

[0229] The number of charging units 20 in each tower TW may be less than or equal to half the number of dry processing units 121D that make up the tower TW. For example, if a tower TW is composed of four dry processing units 121D, one charging unit 20 may be provided in the tower TW (see Figure 29). In this case, the charging unit 20 will be provided in accordance with multiple gas bake units 30. Since it is not necessary to provide a charging unit 20 for each gas bake unit 30, the manufacturing cost of the substrate processing apparatus 100 can be reduced.

[0230] Figure 30 is a schematic diagram showing another example of the configuration of the substrate processing apparatus 100 according to the eighth embodiment. As shown in Figure 30, the charging unit 20 may be provided in the relay section 123. The relay section 123 is provided between the first transport section 112 and the second transport section 122 and relays the substrate W. The relay section 123 is provided with a substrate placement section (not shown) in which the substrate W is arranged in a horizontal position. The charger 21 of the charging unit 20 includes a first ionizer 21A. The first ionizer 21A supplies positive ions to the first main surface Wa of the substrate W placed in the substrate placement section, thereby positively charging it.

[0231] <Ninth Embodiment> Figure 31 is a schematic diagram showing an example of the configuration of the charging unit 20 according to the ninth embodiment. In the ninth embodiment, the charging unit 20 also functions as a wet processing unit 121W. Note that not all wet processing units 121W belonging to the substrate processing apparatus 100 need to have the configuration illustrated in Figure 31. It is sufficient that at least one wet processing unit 121W of the substrate processing apparatus 100 has the configuration illustrated in Figure 31.

[0232] In the ninth embodiment, the substrate W after processing by the wet processing unit 121W is transported to the dry processing unit 121D by the second transport unit 122. During this transport, it is necessary to maintain the charged state of the substrate W, so at least the contact portion of the handle of the second transport unit 122 with the substrate W is formed of an insulating material. For example, ceramics or organic resin can be used as the insulating material. This allows the second transport unit 122 to transport the substrate W from the wet processing unit 121W to the dry processing unit 121D while maintaining the charged state of the substrate W. Here, the dry processing unit 121D includes a cooling unit 29 and a gas bake unit 30. In the ninth embodiment, since the wet processing unit 121W functions as a charging unit 20, the dry processing unit 121D does not need to include a charging unit 20.

[0233] As shown in Figure 31, the wet processing unit 121W includes a substrate holding section 50 for holding the substrate W, a first discharge section 60 for discharging processing liquid toward the first main surface Wa of the substrate W, and a second discharge section 67 for discharging rinsing liquid toward the second main surface Wb of the substrate W.

[0234] In the example shown in Figure 31, the wet processing unit 121W is also provided with a chamber 10. The chamber 10 has a box-like shape, and its internal space corresponds to the processing space for processing the substrate W. The chamber 10 is provided with an openable and closable discharge port (not shown). The second transport unit 122 transports unprocessed substrates W into the chamber 10 through the discharge port and discharges processed substrates W from the chamber 10 through the discharge port.

[0235] The substrate holder 50 is located inside the chamber 10 and holds the substrate W in a horizontal position while rotating the substrate W around the rotation axis Q3. The rotation axis Q3 is an axis that passes through the center of the substrate W held by the substrate holder 50 and is aligned vertically. Such a substrate holder 50 may also be called a spin chuck.

[0236] The substrate holder 50 holds the substrate W using a chuck system such as a mechanical chuck, vacuum chuck, electrostatic chuck, or Bernoulli chuck. In the example shown in Figure 31, the substrate holder 50 holds the substrate W using a mechanical chuck system. For example, the substrate holder 50 includes a spin base 51, chuck pins 52, and a rotation drive unit 53. The spin base 51 has a plate-like shape (e.g., a disc shape) and is positioned so that its thickness direction is aligned with the vertical direction. Multiple chuck pins 52 are provided on the upper surface of the spin base 51. The multiple chuck pins 52 are provided at equal intervals along the circumferential direction with respect to the rotation axis Q3. The multiple chuck pins 52 are provided so as to be displaceable between a holding position and a release position, which will be described below. The holding position is the position where the chuck pins 52 contact the periphery of the substrate W. The multiple chuck pins 52 hold the substrate W by stopping at their respective holding positions. Figure 31 shows the chuck pins 52 stopped in the holding position. The release position is the position where each chuck pin 52 is separated from the substrate W. When multiple chuck pins 52 stop in their respective release positions, the holding of the substrate W by the multiple chuck pins 52 is released. The substrate holding unit 50 also includes a pin drive unit (not shown) that displaces the chuck pins 52. The pin drive unit includes a drive source such as a motor and an air cylinder, and is controlled by the control unit 90.

[0237] The rotary drive unit 53 includes a shaft 531 and a motor 532. The upper end of the shaft 531 is connected to the lower surface of the spin base 51, and the shaft 531 extends from the lower surface of the spin base 51 along the rotation axis Q3. The motor 532 is controlled by the control unit 90 and rotates the shaft 531 around the rotation axis Q3. As a result, the spin base 51, chuck pin 52, and substrate W rotate together around the rotation axis Q3.

[0238] The contact portion of the substrate holding portion 50 with the substrate W (e.g., the chuck pin 52) is formed of an insulating material. For example, an organic resin or ceramics can be used as the insulating material. This allows the substrate holding portion 50 to maintain the charged state of the substrate W and hold the substrate W.

[0239] The first discharge unit 60 sequentially discharges various processing liquids toward the first main surface Wa (e.g., the top surface) of the substrate W held by the substrate holding unit 50. When the first discharge unit 60 discharges the processing liquid toward the first main surface Wa of the rotating substrate W, the processing liquid that lands on the first main surface Wa of the substrate W flows radially outward due to centrifugal force and scatters outward from the periphery of the substrate W. At this time, the processing liquid acts on the first main surface Wa of the substrate W, and processing according to the type of processing liquid is performed on the substrate W.

[0240] The various processing solutions include chemicals for processing the substrate W, and rinsing solutions for washing the chemicals away from the first main surface Wa of the substrate W. The chemicals include, for example, liquids for cleaning, etching, or hydrophobizing the substrate W. The cleaning or etching solutions include, for example, dilute hydrofluoric acid, a mixture of ammonia water, hydrogen peroxide, and pure water (SC1), a mixture of hydrochloric acid, hydrogen peroxide, and pure water (SC2), a mixture of sulfuric acid and hydrogen peroxide (SPM), or phosphoric acid. The hydrophobizing solution is, for example, a silylation solution containing a liquid silylation agent (also called a silane coupling agent). The rinsing solution includes, for example, pure water or an organic solvent (e.g., isopropyl alcohol).

[0241] The first dispensing unit 60 performs various treatments on the substrate W by sequentially dispensing various treatment liquids toward the substrate W. Specific examples of these treatments will be described later.

[0242] The second discharge unit 67 discharges rinsing liquid toward the second main surface Wa (e.g., the bottom surface) of the substrate W held by the substrate holding unit 50. The rinsing liquid is, for example, pure water. When the second discharge unit 67 discharges rinsing liquid toward the second main surface Wb of the rotating substrate W, the rinsing liquid that lands on the second main surface Wb of the substrate W flows radially outward due to centrifugal force and scatters outward from the periphery of the substrate W. Here, a dielectric film (e.g., an SiO2 film) is formed on the second main surface Wb of the substrate W. As the rinsing liquid acts on the second main surface Wb of the substrate W, the second main surface Wb of the substrate W becomes negatively charged, and the first main surface Wa of the substrate W becomes positively charged by inductive charging.

[0243] As shown in Figure 31, the first discharge unit 60 includes at least one nozzle 61. The nozzle 61 discharges the processing liquid toward the first main surface Wa of the substrate W held by the substrate holding unit 50. In the example of Figure 31, the nozzle 61 is located above the substrate W held by the substrate holding unit 50. The nozzle 61 is, for example, a straight nozzle that discharges the processing liquid in a continuous flow state. The nozzle 61 extends, for example, along the vertical direction.

[0244] In the example shown in Figure 31, nozzles 61c, 61w, 61i, and 61h are shown as nozzles 61. Nozzle 61c discharges a chemical solution, nozzle 61w discharges pure water, nozzle 61i discharges an organic solvent, and nozzle 61h discharges a hydrophobic solution.

[0245] In the example shown in Figure 31, nozzles 61w, 61i, and 61h are adjacent to each other horizontally and fixed to each other. In the example shown in Figure 31, nozzles 61w, 61i, and 61h are located inside the opposing member 65. The opposing member 65 has, for example, a cylindrical shape. The opposing member 65 is hollow, and the lower end opening of its hollow portion opens on the lower surface of the opposing member 65. The nozzles 61w, 61i, and 61h are located inside the hollow portion of the opposing member 65, and the processing liquid discharged from each nozzle 61 flows out from the lower end opening of the opposing member 65. In the example shown in Figure 31, the opposing member 65 is located at a position vertically opposite to the central portion of the substrate W held by the substrate holding portion 50.

[0246] Each nozzle 61 is connected to the downstream end of a supply pipe 62, and the upstream end of the supply pipe 62 is connected to a processing liquid supply source that supplies the corresponding processing liquid. A supply valve 63 and a flow control valve 64 are interposed in the supply pipe 62. The supply valve 63 switches the supply pipe 62 open and closed. The flow control valve 64 is, for example, a mass flow controller and adjusts the flow rate of the processing liquid flowing through the supply pipe 62. The supply valve 63 and the flow control valve 64 are controlled by a control unit 90.

[0247] In the example shown in Figure 31, one nozzle 61c is provided, but multiple nozzles 61c may be provided. For example, a nozzle 61c for dilute hydrofluoric acid and a nozzle 61c for SC1 may be provided.

[0248] In the example shown in Figure 31, the opposing member 65 is configured to discharge gas toward the first main surface Wa of the substrate W held by the substrate holding portion 50. In the example shown in Figure 31, the space in the hollow portion of the opposing member 65 other than the nozzle 61 functions as a gas passage 61g. The lower end opening of the lower surface of the opposing member 65 corresponds to the discharge port of the gas passage 61g. In the example shown in Figure 31, the upper part of the opposing member 65 is connected to the downstream end of the supply pipe 62g. That is, the downstream end of the supply pipe 62g is connected to the gas passage 61g. The upstream end of the supply pipe 62g is connected to a gas supply source. The gas supply source has a storage portion (not shown) for storing inert gas and supplies the inert gas to the upstream end of the supply pipe 62g. The inert gas is, for example, nitrogen gas. The supply pipe 62g is provided with a supply valve 63g and a flow control valve 64g. The supply valve 63g switches the opening and closing of the supply pipe 62g. The flow control valve 64g adjusts the flow rate of the inert gas flowing through the supply pipe 62g. The supply valve 63g and the flow control valve 64g are controlled by the control unit 90.

[0249] In the example shown in Figure 31, the wet processing unit 121W is provided with a movable drive unit 66. In the example shown in Figure 31, there is a movable drive unit 66 for the nozzle 61c and a movable drive unit 66 for the opposing member 65. The movable drive unit 66 for the nozzle 61c moves the nozzle 61c, and the movable drive unit 66 for the opposing member 65 moves the discharge head, which includes the nozzles 61w, 61i, 61h, and the opposing member 65, as a single unit. The movable drive unit 66 moves the nozzle 61c or the discharge head between the processing position and the standby position, which will be described below. The processing position is the position where the nozzle 61 discharges the processing liquid toward the first main surface Wa of the substrate W, for example, a position perpendicular to the center of the first main surface Wa of the substrate W. In the example shown in Figure 31, the discharge head stopped at the processing position is shown. The standby position is the position where the nozzle 61 does not discharge the processing liquid toward the first main surface Wa of the substrate W, for example, a position radially outside the substrate holding part 50. In the example shown in Figure 31, the nozzle 61c is shown stopped in the standby position.

[0250] Figure 31 shows an example of the specific configuration of the mobile drive unit 66. In the example in Figure 31, the mobile drive unit 66 includes an arm 661, a support column 662, and a drive source 663. The support column 662 is located radially outward from the guard 70 (described later) and extends vertically. The arm 661 extends horizontally, its tip connected to the discharge head, and its base connected to the support column 662. The drive source 663 is controlled by the control unit 90 and rotates the support column 662 in forward and reverse directions within a predetermined angular range around its central axis Q4. The drive source 663 includes, for example, a motor. When the support column 662 rotates in forward and reverse directions within a predetermined angular range around the central axis Q4, the discharge head reciprocates along the circumferential direction with respect to the central axis Q4. The support column 662 is installed such that the processing position and standby position are located on the movement trajectory of the discharge head. The mobile drive unit 66 is not necessarily limited to the configuration shown in Figure 31, and may include, for example, a linear motion mechanism such as a linear motor.

[0251] The second discharge section 67 includes a nozzle 68w. The nozzle 68 discharges the rinsing liquid toward the second main surface Wb of the substrate W held by the substrate holding section 50. In the example of Figure 31, the nozzle 68w is located below the substrate W held by the substrate holding section 50. The nozzle 68w is, for example, a straight nozzle that discharges the processing liquid in a continuous flow state. The nozzle 68w extends, for example, along the vertical direction.

[0252] The upper end (discharge port) of the nozzle 68w faces the center of the second main surface Wb of the substrate W in a vertical direction. The lower end of the nozzle 68w is connected to the downstream end of the supply pipe 681. In the example of Figure 31, a through hole is formed in the center of the spin base 51, and the shaft 531 is a hollow shaft. At least a portion of the nozzle 68w and the supply pipe 681 extends vertically inside the spin base 51 and the shaft 531. The upstream end of the supply pipe 681 is connected to a rinse fluid supply source. A supply valve 682 and a flow control valve 683 are interposed in the supply pipe 681. The supply valve 682 switches the supply pipe 681 open and closed. The flow control valve 683 is, for example, a mass flow controller, which adjusts the flow rate of the rinse fluid flowing through the supply pipe 681. The supply valve 682 and the flow control valve 683 are controlled by the control unit 90.

[0253] In the example shown in Figure 31, the wet processing unit 121W is provided with a guard 70 and a guard lifting drive unit 71. The guard 70 has a cylindrical shape with the rotation axis Q3 as its central axis and surrounds the substrate holding portion 50. The guard 70 can catch processing liquid splashed from the periphery of the substrate W. The guard lifting drive unit 71 raises and lowers the guard 70 between the upper position and the lower position, which will be described below. The upper position is the position where the upper end of the guard 70 is above the substrate W held by the substrate holding portion 50. When the guard 70 is in the upper position, it can catch processing liquid splashed from the periphery of the substrate W. The lower position is a position lower than the upper position, for example, the position where the upper end of the guard 70 is below the upper surface of the spin base 51.

[0254] In the example shown in Figure 31, multiple guards 70 are provided. The multiple guards 70 are arranged concentrically. The multiple guards 70 may be used differently depending on the type of processing liquid. In the example shown in Figure 31, a cup 72 corresponding to each guard 70 is provided. The cup 72 has an annular (e.g., circular) recess (groove) surrounding the axis of rotation Q3. Each cup 72 receives the processing liquid that flows down the inner circumferential surface of the corresponding guard 70. The upstream end of the discharge pipe 12 is connected to, for example, the bottom of each cup 72. The processing liquid received in each cup 72 is discharged to the outside of the wet processing unit 121W through the discharge pipe 12.

[0255] <Example of operation of the wet treatment unit (charging unit)> Figure 32 is a flowchart showing an example of the operation of the wet processing unit 121W (charging unit 20) according to the ninth embodiment. The control unit 90 causes the wet processing unit 121W to execute the processing from step S31 to step S41 according to a preset processing procedure (recipe).

[0256] First, the second transport unit 122 transports the substrate W (a substrate W with a dielectric film (SiO2 film) laminated on the second main surface Wb) to the wet processing unit 121W, and the substrate holding unit 50 holds the substrate W received from the second transport unit 122 (step S31: holding step). As a specific example, the substrate holding unit 50 displaces a plurality of chuck pins 52 from their respective release positions to holding positions. As a result, the plurality of chuck pins 52 hold the substrate W. The substrate holding unit 50 continues to hold the substrate W until the processing of the substrate W is completed.

[0257] Next, the wet processing unit 121W sequentially supplies various processing liquids to the substrate W. In each step, the guard lifting drive unit 71 raises the guard 70 to the upper position according to the processing liquid, but this will not be explained below.

[0258] In the example shown in Figure 32, the wet treatment unit 121W first performs dilute hydrofluoric acid treatment (step S32). Specifically, the substrate holding unit 50 rotates the substrate W while the first discharge unit 60 discharges dilute hydrofluoric acid toward the first main surface Wa of the substrate W.

[0259] Next, the wet treatment unit 121W performs a rinsing treatment (step S33). Specifically, the substrate holding unit 50 rotates the substrate W, while the first discharge unit 60 discharges pure water toward the first main surface Wa of the substrate W. The pure water washes away the dilute hydrofluoric acid on the first main surface Wa of the substrate W.

[0260] Next, the wet processing unit 121W performs the SC1 process (step S34). Specifically, the substrate holding unit 50 rotates the substrate W, while the first discharge unit 60 discharges SC1 toward the first main surface Wa of the substrate W. As SC1 acts on the first main surface Wa of the substrate W, the substrate W is cleaned, for example.

[0261] Next, the wet treatment unit 121W performs a rinsing treatment (step S35). Specifically, the substrate holding unit 50 rotates the substrate W, while the first discharge unit 60 discharges pure water toward the first main surface Wa of the substrate W. The pure water washes away SC1 on the first main surface Wa of the substrate W.

[0262] Next, the wet processing unit 121W performs SPM processing (step S36). Specifically, the substrate holding unit 50 rotates the substrate W while the first discharge unit 60 discharges SPM toward the first main surface Wa of the substrate W.

[0263] In step S36, the wet processing unit 121W performs a rinse liquid treatment on the second main surface Wb of the substrate W. Specifically, the second discharge unit 67 discharges a rinse liquid toward the second main surface Wb of the rotating substrate W. Due to the occurrence of induced charging by this rinse treatment on the second main surface Wb, the first main surface Wa of the substrate W becomes positively charged. The wet processing unit 121W discharges a rinse liquid onto the second main surface Wb under the processing condition that the first main surface Wa of the substrate W becomes positively charged after a series of processes (processes up to step S41) on the substrate W are completed. The processing conditions include, for example, the rotation speed of the substrate W, the flow rate of the rinse liquid, and the discharge time of the rinse liquid. The amount of charge of the substrate W increases as the flow rate of the rinse liquid discharged onto the second main surface Wb increases, and also increases as the discharge time of the rinse liquid becomes longer. The processing conditions for the SPM treatment are, for example, set in advance by simulation or experiment.

[0264] Next, the wet processing unit 121W performs a rinse treatment (step S37). Specifically, while the substrate holding unit 50 rotates the substrate W, the first discharge unit 60 discharges pure water toward the first main surface Wa of the substrate W. The pure water flushes away the SPM on the first main surface Wa of the substrate W.

[0265] Next, the wet processing unit 121W performs an organic solvent treatment (step S38). Specifically, while the substrate holding unit 50 rotates the substrate W, the first discharge unit 60 discharges an organic solvent toward the first main surface Wa of the substrate W. The organic solvent flushes away the pure water on the first main surface Wa of the substrate W.

[0266] Next, the wet processing unit 121W performs a hydrophobic treatment (step S39). Specifically, while the substrate holding unit 50 rotates the substrate W, the first discharge unit 60 discharges a hydrophobizing liquid toward the first main surface Wa of the substrate W. When the hydrophobizing liquid acts on the first main surface Wa of the substrate W, the first main surface Wa of the substrate W becomes hydrophobic. Specifically, the first main surface Wa of the substrate W becomes hydrophobic by the hydrophobic group of the hydrophobizing liquid substituting the substituent on the first main surface Wa of the substrate W. The hydrophobic group is an organic substance.

[0267] Next, the wet processing unit 121W performs organic solvent treatment (step S40). Specifically, while the substrate holding unit 50 rotates the substrate W, the first discharge unit 60 discharges an organic solvent toward the first main surface Wa of the substrate W. The organic solvent flushes away the hydrophobization liquid on the first main surface Wa of the substrate W. Thereby, the processing liquid on the first main surface Wa of the substrate W is replaced from the hydrophobization liquid with the organic solvent.

[0268] Next, the wet processing unit 121W performs drying treatment (step S41). For example, the substrate holding unit 50 increases the rotation speed of the substrate W. Thereby, the substrate W is dried (spin-dried). In the drying treatment, the first discharge unit 60 may discharge a gas toward the first main surface Wa of the substrate W. Thereby, the substrate W can be dried more rapidly.

[0269] Next, the substrate holding unit 50 releases the holding of the substrate W, and the second transfer unit 122 unloads the substrate W from the wet processing unit 121W. The second transfer unit 122 transfers the substrate W to the dry processing unit 121D.

[0270] As described above, in the ninth embodiment, the wet processing unit 121W can discharge various processing liquids to perform etching or cleaning on the substrate W.

[0271] Incidentally, the charge state of the first main surface Wa of the substrate W can change depending on the processing liquid supplied to the substrate W. For example, the flow of pure water along the first main surface Wa of the substrate W can cause the first main surface Wa to become negatively charged. Since the procedure for a series of processing steps on the substrate W is predetermined, for example, the charge state of the first main surface Wa of the substrate W after a series of processing steps when no rinsing liquid is supplied to the second main surface Wa of the substrate W can be known in advance. Therefore, the processing conditions for the rinsing process in the series of processing steps are set so that the first main surface Wa of the substrate W becomes positively charged by the rinsing process on the second main surface Wb of the substrate W. In other words, the wet processing unit 121W supplies rinsing liquid (e.g., pure water) to the second main surface Wb of the rotating substrate W under processing conditions that result in the first main surface Wa of the substrate W being positively charged after a series of processing steps (i.e., after drying). As an example, the processing conditions may be such that the minimum value of the potential distribution of the first main surface Wa of the substrate W after drying is equal to or greater than the charge reference value (e.g., 10V). This allows the wet processing unit 121W to properly positively charge the first main surface Wa of the substrate W while performing processing on the substrate W.

[0272] Furthermore, the second discharge unit 67 may supply the rinse liquid to the second main surface Wb of the substrate W not only in step S36, but also in other liquid processing steps (for example, at least one of steps S32 to S35).

[0273] In the example described above, the first main surface Wa of the substrate W after drying has hydrophobic groups, which are organic matter. Therefore, the second transport unit 122 transports the substrate W from the wet processing unit 121W to the dry processing unit 121D while maintaining the charged state of the substrate W. In the dry processing unit 121D, the transport unit 40 transports the substrate W to the gas bake unit 30 while maintaining the charged state, and the gas bake unit 30 performs a gas bake treatment to oxidize and remove the organic matter (hydrophobic groups) from the substrate W. Since the first main surface Wa of the substrate W is positively charged, even if metal ions are generated in the processing chamber 31 by the gas bake treatment, the possibility of metal contamination of the substrate W is low.

[0274] In the example described above, the wet processing unit 121W hydrophobizes the substrate W and then dries the substrate W, but this is not necessarily the only method. The wet processing unit 121W may also perform sublimation drying. In this case, the following steps are performed instead of steps S38 to S41. That is, the wet processing unit 121W discharges a processing liquid containing a sublimable substance onto the first main surface Wa of the substrate W, then solidifies the processing liquid on the substrate W to form a solidified film of the sublimable substance, and then sublimes the solidified film to dry the substrate W. In this case, a small amount of the sublimable substance (organic matter) may remain on the first main surface Wa of the substrate W.

[0275] <Tenth Embodiment> A resist may be formed on the first main surface Wa of the substrate W. The substrate processing apparatus 100 may perform a charging process to positively charge the first main surface Wa of the substrate W, a pre-bake process to heat the resist on the charged substrate W, and an exposure process to perform immersion exposure on the substrate W after the pre-bake process. The charging process is performed by the charging unit 20. The unit that performs the pre-bake process on the substrate W includes a hot plate for heating the substrate W. As the hot plate heats the substrate W, the chamber of the unit also becomes hot. Therefore, although metal contained in the chamber may flow out into the chamber in an ionic state, the metal ions repel the positively charged substrate W, thus reducing the possibility of the substrate W being contaminated with metal. Consequently, the possibility of metal contamination being transferred to the liquid in the exposure apparatus can be reduced.

[0276] As described above, the substrate processing apparatus 100 and the substrate processing method have been described in detail, but the above description is illustrative in all respects, and this disclosure is not limited thereto. Furthermore, the various modifications described above can be applied in combination as long as they do not contradict each other. And it is understood that a number of modifications not illustrated can be conceivable without falling outside the scope of this disclosure. [Explanation of Symbols]

[0277] 111 Loadport 121D Dry Processing Unit 112 First Conveyor Unit (Conveyor Unit) 122 Second Conveyor Unit (Conveyor Unit) 123 Relay Unit 20 Charging Units 21 Charger 212 Lifting drive unit 21a Outlet 21A First Ionizer 23 Induction Member 235 Mobile drive unit 24 Static eliminator 24A Second Ionizer 25 Cooler 26 Elevating pins 261 Pin drive unit 27 Displacement drive unit 28 Rectifier plate 285 Electrostatic Sensor 30 Gas bake unit (processing unit) 31 Processing Chamber 33 Heater 40 Conveyor Units B1 Main Plate P1 support W board Wa First Main Surface Wb 2nd principal surface

Claims

1. A charging unit including a charger that positively charges the first main surface of a substrate having a first main surface and a second main surface, A processing unit having a processing chamber, which includes at least one of heating the substrate in the processing chamber and supplying a processing gas to the substrate, and which performs processing that involves the generation of metal ions in the processing chamber. A substrate processing apparatus comprising:

2. A substrate processing apparatus according to claim 1, The processing unit is connected to the processing chamber and includes a supply pipe through which the processing gas flows. The aforementioned processing gas contains ozone gas, and is used in a substrate processing apparatus.

3. A substrate processing apparatus according to claim 1 or claim 2, The charging apparatus includes a first ionizer for charging that supplies positive ions to the first main surface of the substrate.

4. A substrate processing apparatus according to claim 3, The charging unit further includes a rectifier plate provided between the outlet of the first ionizer and the substrate, wherein the substrate processing apparatus is a substrate processing apparatus.

5. A substrate processing apparatus according to claim 4, The aforementioned charging unit is A substrate processing apparatus comprising a displacement drive unit that changes the positional relationship between the first ionizer and the substrate, thereby changing the supply range of cations to the first main surface of the substrate.

6. A substrate processing apparatus according to claim 5, A substrate processing apparatus comprising a displacement drive unit that rotates at least one of the substrate and the first ionizer around a rotation axis that intersects the first main surface of the substrate.

7. A substrate processing apparatus according to claim 5, A substrate processing apparatus comprising a displacement drive unit that moves at least one of the substrate and the first ionizer in a direction along the first main surface of the substrate.

8. A substrate processing apparatus according to claim 5, The displacement drive unit is a substrate processing apparatus that oscillates the first ionizer.

9. A substrate processing apparatus according to claim 1 or claim 2, The charging unit includes a static eliminator for removing static electricity from the first main surface of the substrate, in a substrate processing apparatus.

10. A substrate processing apparatus according to claim 9, A substrate processing apparatus comprising a static eliminator including a second ionizer, the second ionizer supplying negative particles containing at least one of electrons and negative ions, and positive ions to the first main surface of the substrate.

11. A substrate processing apparatus according to claim 1 or claim 2, The aforementioned processing unit is A main body plate is provided within the processing chamber and has an opposing surface that faces the second main surface of the substrate at a distance from it, A support that protrudes from the opposing surface and supports the second main surface of the substrate Includes, The charger is a substrate processing apparatus that positively charges both the first main surface and the second main surface of the substrate.

12. A substrate processing apparatus according to claim 11, The aforementioned charger is The substrate comprises the first main surface and a first ionizer that supplies cations to the portion of the substrate outside the first main surface. A guide member that guides the cations flowing through the outer portion to the second main surface of the substrate, A substrate processing apparatus, including

13. A substrate processing apparatus according to claim 12, The aforementioned charging unit A substrate placement portion that supports the second main surface of the substrate, Multiple lifting pins, A pin drive unit that raises the plurality of lifting pins to lift the substrate from the substrate mounting area, and lowers the plurality of lifting pins to place the substrate on the substrate mounting area. Equipped with, The charger includes a moving drive unit that moves the induction member between a charging position and a standby position while the plurality of lifting pins support the substrate, The charging position is a position in which a part of the induction member is interposed between the second main surface of the substrate supported by the plurality of lifting pins and the portion of the substrate to be placed. The aforementioned standby position is located outside the substrate, in the substrate processing apparatus.

14. A substrate processing apparatus according to claim 11, The charger includes a first ionizer having an outlet for releasing positive ions, The substrate processing apparatus wherein the first ionizer is provided at a position where the outlet faces the side surface of the substrate.

15. A substrate processing apparatus according to claim 14, The charging unit further includes a lifting drive unit that raises and lowers one of the first ionizer and the substrate relative to the other, in a substrate processing apparatus.

16. A substrate processing apparatus according to claim 1 or claim 2, The processing unit includes a heater for heating the substrate as part of the processing, A substrate processing apparatus, wherein the charging unit further includes a cooler for cooling the substrate.

17. A substrate processing apparatus according to claim 1 or claim 2, A substrate processing apparatus comprising a charging unit further including one or more charging sensors for measuring the measurement potential of the first main surface of the substrate.

18. A substrate processing apparatus according to claim 17, A substrate processing apparatus comprising a control unit that, when the measured potential is less than a charging reference value, causes the charger to supply cations toward the first main surface of the substrate.

19. A substrate processing apparatus according to claim 18, The charge sensor measures the measurement potential at multiple positions on the first main surface, The control unit causes the charger to supply cations to the charger toward the position among the plurality of positions where the measurement potential is less than the charging reference value, in a substrate processing apparatus.

20. A substrate processing apparatus according to claim 1 or claim 2, The aforementioned charger is A substrate holding unit that rotates the substrate while holding it, A first discharge unit that sequentially discharges a plurality of processing liquids toward the first main surface of the substrate held by the substrate holding unit, A second discharge unit that discharges rinse liquid toward the second main surface of the substrate held by the substrate holding unit, Includes, The charging unit includes a control unit that controls the substrate holding unit, the first discharge unit, and the second discharge unit to perform a series of processes on the substrate, The control unit discharges the rinse liquid toward the second main surface of the substrate to the second discharge unit under processing conditions in which the first main surface of the substrate after the series of processing is positively charged.

21. A substrate processing apparatus according to claim 1 or claim 2, Equipped with a transport unit, The charging unit is located outside the processing chamber. A substrate processing apparatus comprising a transport unit having an insulating contact portion, wherein the transport unit transports the substrate between the charging unit and the processing unit while the contact portion supports or holds the substrate.

22. A substrate processing apparatus according to claim 21, A load port on which a carrier containing the aforementioned substrate is placed, Each comprises a plurality of dry processing units including the charging unit, the transport unit, and the processing unit, A transport unit that transports the substrate between the load port and the plurality of dry processing units A substrate processing apparatus comprising:

23. A substrate processing apparatus according to claim 21, A load port on which a carrier containing the aforementioned substrate is placed, A relay unit that relays the aforementioned substrate, A first transport unit transports the substrate between the carrier and the relay unit, Multiple processing units and Equipped with, The transport unit includes a second transport unit that transports the substrate between the relay unit and the plurality of processing units, The charging unit is provided in the relay section of the substrate processing apparatus.

24. A charging step of positively charging the first main surface of a substrate having a first main surface and a second main surface, A gas bake step comprising heating the substrate in a processing chamber and supplying a processing gas, and performing a process that involves generating metal ions in the processing chamber. A substrate processing method comprising:

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