Measuring device, lithography device, and method for manufacturing articles

Abstract

This technology provides an advantage in measuring the relative position between a first group of marks on the original plate and a second group of marks on the substrate. [Solution] A measuring device for measuring the relative position between a first group of marks provided on a master plate and a second group of marks provided on a substrate, comprising: an image sensor that simultaneously images the first group of marks and the second group of marks located within a single field of view to acquire mark images; an adjustment unit that adjusts the amount of light illuminating the first group of marks and the second group of marks; and a control unit that adjusts the amount of light via the adjustment unit for each region containing the image of each mark in the first group of marks and the second group of marks.

Description

Technical Field

[0001] The present invention relates to a measuring device, a lithography device, and a method for manufacturing an article.

Background Art

[0002] An imprint device is a device capable of transferring a nano-scale fine pattern, and has attracted attention as one of mass-production lithography devices for semiconductor elements, liquid crystal display elements, magnetic storage media, etc. In an imprint device, in order to accurately transfer the pattern of a mold (mold) as a master to an imprint material on a substrate, it is required to align the mold and the substrate with high precision (alignment).

[0003] In an imprint device, generally, a die-to-die alignment method is adopted as an alignment method between a mold and a substrate. The die-to-die alignment method is an alignment method in which, for each shot region on a substrate, marks on the mold side provided on the mold and marks on the substrate side provided on the substrate are optically detected to correct a deviation in the positional relationship (relative position) between the mold and the substrate (see Patent Documents 1 and 2).

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Patent Document 2

Summary of the Invention

Problems to be Solved by the Invention

[0005] In aligning a mold with a substrate, a group of marks consisting of multiple types of marks is used as marks on both the mold and the substrate to achieve a wide detection range. However, when measuring the relative position (positional misalignment) between the substrate mark group and the mold mark group, the optical characteristics of individual marks constituting the mark group may differ. When detecting such marks simultaneously through the same optical system, it is not possible to adjust each mark individually to obtain a good image (detection signal). Furthermore, extremely bright marks or stray light from marks other than those within the same field of view of the measuring device may affect other marks and be included as noise in the detection signal. Even if the optical characteristics of individual marks constituting the mark group are the same, similar problems can occur if there is unevenness in the light illuminating each mark. These problems contribute to a decrease in the measurement accuracy of the marks.

[0006] This invention has been made in view of the problems of the prior art, and its exemplary objective is to provide a technique that is advantageous for measuring the relative position between a first group of marks provided on a master plate and a second group of marks provided on a substrate. [Means for solving the problem]

[0007] To achieve the above objective, a measuring device as one aspect of the present invention is a measuring device for measuring the relative position between a first group of marks provided on a master plate and a second group of marks provided on a substrate, characterized by comprising: an image sensor that simultaneously images the first group of marks and the second group of marks located within a single field of view to acquire a mark image; an adjustment unit that adjusts the amount of light illuminating the first group of marks and the second group of marks; and a control unit that adjusts the amount of light via the adjustment unit for each region including the image of each mark in the first group of marks and the second group of marks.

[0008] Further objects or other aspects of the present invention will be revealed by embodiments described below with reference to the accompanying drawings. [Effects of the Invention]

[0009] According to the present invention, for example, it is possible to provide a technique that is advantageous for measuring the relative position between a first group of marks provided on a master plate and a second group of marks provided on a substrate. [Brief explanation of the drawing]

[0010] [Figure 1] This is a schematic diagram showing the configuration of an imprint device as one aspect of the present invention. [Figure 2A] This is a schematic diagram showing an example of the configuration of the measurement unit. [Figure 2B] This is a schematic diagram showing an example of the configuration of the measurement unit. [Figure 3] This diagram provides a detailed explanation of the configuration of the mold-side mark group and the substrate-side mark group. [Figure 4] This is a schematic diagram showing an example of a superimposed image acquired by the imaging unit. [Figure 5] This is a schematic diagram showing an example of the configuration of the reflective adjustment mechanism and the transmissive adjustment mechanism. [Figure 6] This diagram illustrates the setting of the regions containing the images of each mark in the mold-side mark group and the substrate-side mark group in the superimposed image. [Figure 7] This figure shows an example of reflectance or transmittance individually set for each region containing the image of each mark in the mold-side mark group and the substrate-side mark group. [Figure 8] This figure shows an example of the result of selecting reflective or transmitting elements that reflect or transmit light in the direction toward the mold and substrate. [Figure 9] This diagram illustrates the temporal control of reflective or transmissive elements for each region containing the image of each mark in the mold-side mark group and the substrate-side mark group. [Figure 10] This diagram illustrates the setting of the regions containing the images of each mark in the mold-side mark group and the substrate-side mark group in the superimposed image. [Figure 11] This is a diagram illustrating the manufacturing method of an article. [Modes for carrying out the invention]

[0011] The embodiments will be described in detail below with reference to the attached drawings. Note that the following embodiments do not limit the invention as defined in the claims. While the embodiments describe multiple features, not all of these features are essential to the invention, and the features may be combined in any way. Furthermore, in the attached drawings, identical or similar configurations are given the same reference numerals, and redundant descriptions are omitted.

[0012] Figure 1 is a schematic diagram showing the configuration of an imprint apparatus 100 as one aspect of the present invention. The imprint apparatus 100 is a lithography apparatus used in the lithography process, which is a manufacturing process for devices such as semiconductor elements, liquid crystal display elements, and magnetic storage media, to form patterns on a substrate. The imprint apparatus 100 brings an imprint material placed (supplied or coated) on the substrate into contact with a mold and applies curing energy to the imprint material to form a pattern on a cured material into which the pattern of the mold has been transferred. For example, the imprint apparatus 100 places an imprint material on a substrate and cures the imprint material with a mold that has a pattern (reliefs) formed on it in contact with the imprint material on the substrate. Then, the imprint apparatus 100 widens the gap between the mold and the substrate and separates the mold from the cured imprint material on the substrate (demolition), thereby forming a pattern of the imprint material on the substrate. This series of processes performed by the imprint apparatus 100 is generally called "imprint processing".

[0013] The imprint material used is a material (curable composition) that hardens when curing energy is applied. The curing energy can be electromagnetic waves or heat. Electromagnetic waves include, for example, light selected from wavelengths between 10 nm and 1 mm, specifically infrared rays, visible light, and ultraviolet rays.

[0014] The curable composition is a composition that cures upon irradiation with light or heating. The photocurable composition that cures upon irradiation with light contains at least a polymerizable compound and a photoinitiator, and may further contain a non-polymerizable compound or a solvent as necessary. The non-polymerizable compound is at least one selected from the group consisting of a sensitizer, a hydrogen donor, an internal mold release agent, a surfactant, an antioxidant, a polymer component, and the like.

[0015] The imprint material may be applied in a film form on a substrate by a spin coater or a slit coater. Further, the imprint material may be applied on the substrate in a droplet form or in an island or film form formed by connecting a plurality of droplets by a liquid injection head. The viscosity of the imprint material (viscosity at 25°C) is, for example, 1 mPa·s or more and 100 mPa·s or less.

[0016] For the substrate, glass, ceramics, metal, semiconductor, resin, etc. are used, and a member made of a material different from the substrate may be formed on its surface as necessary. Specifically, the substrate includes a silicon wafer, a compound semiconductor wafer, quartz glass, and the like.

[0017] In this specification and the accompanying drawings, directions are indicated in an XYZ coordinate system in which the direction parallel to the surface on which the substrate is disposed is the XY plane. The directions parallel to the X-axis, Y-axis, and Z-axis in the XYZ coordinate system are the X-direction, Y-direction, and Z-direction, respectively, and the rotations around the X-axis, Y-axis, and Z-axis are θX, θY, and θZ, respectively.

[0018] The imprint apparatus 100 forms a pattern of the imprint material urchasing the imprint material 104 on the substrate using the mold 103. As shown in FIG. 1, the imprint apparatus 100 includes a measurement unit 101 (measurement device), an imprint head 102, a curing unit 106, a placement unit 107, a substrate stage 109, a stage base plate 110, and a control unit 112.

[0019] The mold 103 is, for example, a master plate in which a three-dimensional pattern of bumps and depressions corresponding to the circuit pattern of a device is formed, and is also called a mold. The mold 103 is made of a material that can transmit light such as ultraviolet light, for example, quartz. In addition, before placing the imprint material 104 on the substrate 105, an adhesion layer may be provided as needed to improve the adhesion between the imprint material 104 and the substrate 105.

[0020] The curing unit 106 cures the imprint material 104 on the substrate by irradiating it with light through the mold 103. The curing section 106 includes, for example, a light source such as a mercury lamp that emits light (curing light such as i-lines and g-lines) for curing the imprint material 104, an elliptical mirror that focuses the curing light emitted from the light source, and an optical system for irradiating the imprint material 104 with the curing light. Such an optical system includes lenses and apertures for shaping the curing light. The aperture is used for controlling the field of view to irradiate only the shot area to be imprinted with curing light, and for controlling the outer edge of the aperture to limit the irradiation of curing light outside the shot area. The curing section 106 may also further include an optical integrator for uniformly illuminating the mold 103.

[0021] The imprint head 102 includes a positioning mechanism for controlling the position of the mold 103 with respect to six axes, and a transfer mechanism for pressing the mold 103 onto the imprint material 104 on the substrate and for pulling the mold 103 away from the cured imprint material 104 on the substrate. Here, the six axes include the X, Y, and Z axes, as well as rotation around each of those axes.

[0022] The substrate stage 109 holds the substrate 105 and is configured to be movable relative to the stage platen 110. The stage platen 110 is a member for supporting the substrate stage 109 in a movable manner. The substrate stage 109 includes, for example, a positioning mechanism for controlling the position of the substrate 105 in six axes.

[0023] The placement unit 107 places (supplies or applies) the imprint material 104 onto the substrate. In this embodiment, the imprint material 104 is an ultraviolet-curable resin that hardens when irradiated with ultraviolet light. The placement unit 107 includes, for example, a tank for containing the imprint material 104, a plurality of nozzles for discharging the imprint material 104 supplied from the tank via a supply path onto the substrate 105, piezoelectric elements provided in the supply path communicating with each nozzle, and a discharge control unit. The discharge control unit controls the amount (discharge amount) and discharge timing of the imprint material 104 discharged as droplets from one nozzle by adjusting the drive signal given to the piezoelectric elements.

[0024] The measurement unit 101 is configured to have a field of view that can capture the mark areas, including the marks provided on the mold 103 and the substrate 105, respectively. The measurement unit 101 includes, for example, four scopes that detect marks provided at the four corners of the shot area on the mold 103 and the substrate. The measurement unit 101 captures an image of the mark area of ​​the shot area to be imprinted via the mold 103 and acquires an image, and based on this image, measures the relative position (positional misalignment) between the mold-side mark group 108 and the substrate-side mark group 111. The measurement unit 101 may also be configured to have a field of view that can capture the entire shot area on the substrate. The mold-side mark group 108 (first mark group) consists of multiple (types) of marks provided on the mold 103. The substrate-side mark group 111 (second mark group) consists of multiple (types) of marks provided on the substrate 105. The substrate-side mark group 111 is provided for each shot area on the substrate and includes multiple marks provided at different positions within the shot area. In this embodiment, at least one of the mold-side mark group 108 and the substrate-side mark group 111 includes a plurality of marks with different optical properties, i.e., different optical properties.

[0025] The control unit 112 is composed of a computer (information processing device) including a CPU and memory. The control unit 112 comprehensively controls each part of the imprint device 100 according to a program stored in the memory unit to operate the imprint device 100. The control unit 112 controls the imprint process, which involves transferring the pattern of the mold 103 onto the imprint material 104 on the substrate to form the pattern of the imprint material 104 on the substrate.

[0026] The measurement unit 101 will be described in detail with reference to Figures 2A and 2B. Figures 2A and 2B are schematic diagrams showing an example of the configuration of the measurement unit 101. In this embodiment, the measurement unit 101 measures the relative positions of the mold-side mark group 108 and the substrate-side mark group 111 from a superimposed image (mark image) obtained by imaging the mold-side mark group 108 and the substrate-side mark group 111 that are present in a single field of view. The measurement unit 101 also includes an adjustment unit that adjusts the amount of light illuminating the mold-side mark group 108 and the substrate-side mark group 111 in order to adjust the amount of light reaching the imaging unit from the mold-side mark group 108 and the substrate-side mark group 111 (light detected by the imaging unit). The adjustment unit that adjusts the amount of light illuminating the mold-side mark group 108 and the substrate-side mark group 111 is implemented as a reflective adjustment mechanism or a transmissive adjustment mechanism, as shown in Figures 2A and 2B.

[0027] Figure 2A shows the configuration of a measurement unit 101A, including a reflective adjustment mechanism 206, as an example of a measurement unit 101. The measurement unit 101A includes, for example, a mirror optical system 201, an illumination unit 202, an imaging unit 203, a first imaging optical system 204, an image processing unit 205, a reflective adjustment mechanism 206, and a second imaging optical system 207. In addition to the mirror optical system 201, the first imaging optical system 204, the reflective adjustment mechanism 206, and the second imaging optical system 207, the measurement unit 101A may further include other optical systems, specifically lenses, apertures, mirrors, etc.

[0028] The illumination unit 202 illuminates the substrate 105 via the second imaging optical system 207, the reflective adjustment mechanism 206, the first imaging optical system 204, and the mold 103. The imaging unit 203 acquires an image by imaging the mark regions, including the marks provided on the mold 103 and the substrate 105, via the first imaging optical system 204 and the mirror optical system 201. The imaging unit 203 includes an image sensor in which a plurality of pixels are arranged to detect light from each mark of the mold-side mark group 108 and the substrate-side mark group 111. In this embodiment, the imaging unit 203 is composed of an image sensor in which a plurality of pixels are arranged so that the mark region of at least one shot region on the substrate can be imaged via the first imaging optical system 204. Specifically, the imaging unit 203 may be a CMOS sensor, a CCD sensor, a line sensor, etc. The image processing unit 205 is composed of, for example, a computer (information processing device) including a CPU and memory, and processes the image acquired by the imaging unit 203 to calculate the relative position between the mold-side mark group 108 and the substrate-side mark group 111 as a measurement result. Note that the function of the image processing unit 205 may also be provided by the control unit 112.

[0029] The reflective adjustment mechanism 206 includes, for example, a digital micromirror device or a reflective liquid crystal device. In this embodiment, the reflective adjustment mechanism 206 is configured to adjust the reflectance and reflection angle to the illumination light for each arbitrary region set within the reflective region that reflects the light (illumination light) from the illumination unit 202. The reflective adjustment mechanism 206 may be configured in combination with a wavelength filter to adjust the reflectance for each wavelength of the illumination light. This makes it possible to select the wavelength of the illumination light and adjust the reflectance for each arbitrary region set within the reflective region when the illumination light includes multiple wavelengths. Furthermore, the reflective adjustment mechanism 206 may be configured in combination with an ND filter to expand the range of reflectance adjustment.

[0030] Figure 2B shows the configuration of a measurement unit 101B, including a transmissive adjustment mechanism 208, as an example of a measurement unit 101. The measurement unit 101B includes, for example, a mirror optical system 201, an illumination unit 202, an imaging unit 203, a first imaging optical system 204, an image processing unit 205, a second imaging optical system 207, and a transmissive adjustment mechanism 208. In addition to the mirror optical system 201, the first imaging optical system 204, the second imaging optical system 207, and the transmissive adjustment mechanism 208, the measurement unit 101B may further include other optical systems, specifically lenses, apertures, mirrors, etc.

[0031] The illumination unit 202 illuminates the substrate 105 via the second imaging optical system 207, the transmission type adjustment mechanism 208, the first imaging optical system 204, and the mold 103. The imaging unit 203 captures images of the mark areas, including the marks provided on the mold 103 and the substrate 105, via the first imaging optical system 204 and the mirror optical system 201, and acquires images. The specific configuration and functions of the imaging unit 203 and the image processing unit 205 are as described above, so a detailed explanation is omitted here.

[0032] The transmissive adjustment mechanism 208 includes, for example, a transmissive liquid crystal device. In this embodiment, the transmissive adjustment mechanism 208 is configured to adjust the transmittance to the illumination light for each arbitrary region set within the transmissive region that transmits light (illumination light) from the illumination unit 202. The transmissive adjustment mechanism 208 may be configured in combination with a wavelength filter to adjust the transmittance for each wavelength of the illumination light. This makes it possible to select the wavelength of the illumination light and adjust the transmittance for each arbitrary region set within the reflection region when the illumination light contains multiple wavelengths. The transmissive adjustment mechanism 208 may also be configured in combination with an ND filter to expand the range of transmittance adjustment.

[0033] In an imprint apparatus 100 having such a configuration, the measurement unit 101 measures the relative position (positional misalignment) between the mold-side mark group 108 and the substrate-side mark group 111, and aligns the mold 103 and the substrate 105 based on this relative position. The alignment of the mold 103 and the substrate 105 is controlled by the control unit 112 as part of the imprint process (that is, the control unit 112 functions as an alignment unit that aligns the mold 103 and the substrate 105).

[0034] The configurations of the mold-side mark group 108 and the substrate-side mark group 111 will be described in detail with reference to Figures 3(a) and 3(b).

[0035] Figure 3(a) is a schematic diagram showing an example of the configuration of the mold-side mark group 108. As shown in Figure 3(a), the mold-side mark group 108 includes, for example, a mold-side wide-area mark 301 (first rough inspection mark), a mold-side high-precision X mark 302 (first fine inspection mark), and a mold-side high-precision Y mark 303 (first fine inspection mark). The mold-side wide-area mark 301 is a mark for measuring the positional displacement of the mold 103 with respect to the center of the imaging area (detection area) of the imaging unit 203 over a wide area. The mold-side high-precision X mark 302 is a mark for measuring the positional displacement in the X direction with respect to the substrate-side mark group 111. The mold-side high-precision Y mark 303 is a mark for measuring the positional displacement in the Y direction with respect to the substrate-side mark group 111.

[0036] Figure 3(b) is a schematic diagram showing an example of the configuration of the substrate-side mark group 111. As shown in Figure 3(b), the substrate-side mark group 111 includes, for example, a substrate-side wide-area mark 304 (second rough inspection mark), a substrate-side high-precision X mark 305 (second fine inspection mark), and a substrate-side high-precision Y mark 306 (second fine inspection mark).

[0037] The wide-area mark 304 on the substrate side is a mark for measuring the positional displacement of the substrate 105 with respect to the center of the imaging area (detection area) of the imaging unit 203 over a wide area. The high-precision X mark 305 on the substrate side is used in combination with the high-precision X mark 302 on the mold side to measure the positional displacement in the X direction with respect to the mold side mark group 108. The high-precision Y mark 306 on the substrate side is used in combination with the high-precision Y mark 303 on the mold side to measure the positional displacement in the Y direction with respect to the mold side mark group 108.

[0038] The alignment of the mold 103 and the substrate 105 will be described below. Figure 4(a) is a schematic diagram showing an example of an image acquired by the imaging unit 203 during the alignment of the mold 103 and the substrate 105, i.e., an overlaid image 401 (mark image) of each mark group provided on the mold 103 and the substrate 105. Referring to Figure 4(a), the overlaid image 401 includes a wide-area mark image 402 on the mold side, a wide-area mark image 403 on the substrate side, a high-precision X-mark overlaid image 404, and a high-precision Y-mark overlaid image 405.

[0039] The wide-area mark image 402 on the mold side is an image of the wide-area mark 301 on the mold side acquired by the imaging unit 203. Specifically, first, light from the illumination unit 202 (illumination light) is shone onto the wide-area mark 301 on the mold side via the second imaging optical system 207, the reflective adjustment mechanism 206 or the transmissive adjustment mechanism 208, and the first imaging optical system 204. Then, the wide-area mark image 402 on the mold side is acquired by detecting the light (detection light) reflected from the wide-area mark 301 in the imaging unit 203 via the first imaging optical system 204 and the mirror optical system 201.

[0040] The wide-area mark image 403 on the substrate side is an image of the wide-area mark 304 on the substrate side acquired by the imaging unit 203. Specifically, first, light from the illumination unit 202 (illumination light) is shone onto the wide-area mark 304 on the substrate side via the second imaging optical system 207, the reflective adjustment mechanism 206 or the transmissive adjustment mechanism 208, the first imaging optical system 204, the mold 103, and the imprint material 104. Then, the light reflected from the wide-area mark 304 on the substrate side (detection light) is detected by the imaging unit 203 via the imprint material 104, the mold 103, the first imaging optical system 204, and the mirror optical system 201, thereby acquiring the wide-area mark image 403 on the substrate side.

[0041] The high-precision X-mark superimposed image 404 is formed by superimposing (combining) the mold-side high-precision X-mark 302 and the substrate-side high-precision X-mark 305, and is acquired by the imaging unit 203. In this embodiment, the high-precision X-mark superimposed image 404 is an interference fringe image (interference fringe image) formed by the difference between the mark spacing of the mold-side high-precision X-mark 302 and the mark spacing of the substrate-side high-precision X-mark 305.

[0042] The high-precision Y-mark superimposed image 405 is formed by superimposing (combining) the mold-side high-precision Y-mark 303 and the substrate-side high-precision Y-mark 306, and is acquired by the imaging unit 203. In this embodiment, the high-precision Y-mark superimposed image 405 is an interference fringe image (interference fringe image) formed by the difference between the mark spacing of the mold-side high-precision Y-mark 303 and the mark spacing of the substrate-side high-precision Y-mark 306.

[0043] Each of the wide-area mark image 402 on the mold side, the wide-area mark image 403 on the substrate side, the high-precision X-mark superimposed image 404, and the high-precision Y-mark superimposed image 405 is processed by the image processing unit 205 in order to calculate their respective positions (measured values).

[0044] One processing method for the mold-side wide-area mark image 402 and the substrate-side wide-area mark image 403 in the image processing unit 205 is to detect the peak position of the image including the mold-side wide-area mark image 402 and the substrate-side wide-area mark image 403. One processing method for the high-precision X-mark superimposed image 404 and the high-precision Y-mark superimposed image 405 in the image processing unit 205 is to fit the interference fringe image with trigonometric functions or the like.

[0045] In these processing methods, in order to accurately calculate measurement values ​​from the mold-side wide-area mark image 402, the substrate-side wide-area mark image 403, the high-precision X-mark superimposed image 404, and the high-precision Y-mark superimposed image 405, it is necessary that there is no saturation in each image (light intensity). Image saturation includes "overexposure" caused by an excessive amount of light (light intensity) detected by the imaging unit 203 (above the detection limit), and "underexposure" caused by an insufficient amount of light (light intensity) detected by the imaging unit 203 (below the detection limit).

[0046] If the optical properties of the imprint material 104, which is filled between the mold-side mark group 108 (mold 103) and the substrate-side mark group 111 (substrate 105), are similar to those of the mold 103, for example, if the refractive index is close, sufficient detection light cannot be obtained from the mold-side mark group 108. In such cases, the mold-side mark group 108 is processed to reflect illumination light, for example, by adding a metal film. In addition, the surface of the substrate 105 may be coated with a planarization film to flatten the surface, an adhesion film to improve adhesion with the imprint material 104, or a protective film necessary when processing the pattern of the imprint material 104. Therefore, the mold-side wide-range mark image 402, the substrate-side wide-range mark image 403, the high-precision X-mark superimposed image 404, and the high-precision Y-mark superimposed image 405 are each acquired by the imaging unit 203 via different paths. As a result, the amount of light detected by the imaging unit 203 will differ for each image depending on the wavelength of the illumination light, the thickness of the imprint material 104, the type and thickness of the metal film added to the mold-side mark group 108, and the type (optical properties) and thickness of the film added to the surface of the substrate 105.

[0047] Figure 4(b) is a schematic diagram showing an example of an image acquired by the imaging unit 203 during alignment of the mold 103 and the substrate 105, i.e., a superimposed image 406 (mark image) of each mark group provided on the mold 103 and the substrate 105. Referring to Figure 4(b), each image in the superimposed image 406 is saturated. Specifically, the superimposed image 406 includes a wide-area mark image 407 on the mold side that is "overexposed" and a wide-area mark image 408 on the substrate side that is "underexposed". Furthermore, the superimposed image 406 includes a high-precision X-mark superimposed image 409 that is "overexposed" and a high-precision Y-mark superimposed image 410 that is "underexposed". Note that the saturation of each image included in the superimposed image 406, i.e., the combination of "overexposed" and "underexposed", is arbitrary and is not limited to the combination shown in Figure 4(b). These images are acquired by the same imaging unit 203 (measurement unit 101). Therefore, the amount of light illuminating the mold-side mark group 108 and the substrate-side mark group 111 (each mark) is adjusted relative to the entire superimposed image 406 in which each image is saturated. In this case, as shown in Figure 4(b), the imaging unit 203 cannot acquire each image included in the superimposed image 406 with the optimal amount of light.

[0048] Referring to Figures 5(a) and 5(b), the specific configurations of the reflective adjustment mechanism 206 and the transmissive adjustment mechanism 208 will be described. In this embodiment, the reflective adjustment mechanism 206 and the transmissive adjustment mechanism 208 are configured such that the amount of light illuminating each mark can be adjusted for each region containing the images of each mark in the mold-side mark group 108 and the substrate-side mark group 111 in the superimposed image 406.

[0049] Figure 5(a) is a schematic diagram showing an example of the configuration of the reflective adjustment mechanism 206. As shown in Figure 5(a), the reflective adjustment mechanism 206 includes a plurality of reflective elements 501 arranged in a grid pattern within the reflective region, a reflection drive unit 502, and a reflection control unit 503.

[0050] The reflective element 501 is an element having a reflective structure that reflects light incident from the illumination unit 202 through the second imaging optical system 207. The reflective element 501 includes, for example, a micromirror element or a reflective liquid crystal element.

[0051] The reflective drive unit 502 is a unit for independently driving each of the reflective elements 501 to a first state or a second state (changing the orientation of the reflective elements 501). Here, the first state is a state in which the reflective elements 501 reflect light from the illumination unit 202 toward the mold 103 (mold-side mark group 108) and the substrate 105 (substrate-side mark group 111) (i.e., the mold 103 and the substrate 105 are illuminated by the light reflected by the reflective elements 501). The second state is a state in which the reflective elements 501 reflect light from the illumination unit 202 toward a direction different from the direction toward the mold 103 and the substrate 105 (i.e., the mold 103 and the substrate 105 are not illuminated by the light reflected by the reflective elements 501).

[0052] The reflection control unit 503 independently controls each of the reflection elements 501 via the reflection drive unit 502. For example, the reflection control unit 503 controls the reflectance of any region set within the reflection region by selecting either a first state or a second state (a reflection element 501 that reflects light toward the mold 103 and substrate 105) for each state of the reflection element 501. Note that the function of the reflection control unit 503 may also be provided by the control unit 112.

[0053] Thus, in this embodiment, the reflective adjustment mechanism 206 can adjust the amount of light illuminating the mold-side mark group 108 and the substrate-side mark group 111 for each arbitrary region set within the reflective region, and further, with the reflective element 501 as a single unit (region).

[0054] Figure 5(b) is a schematic diagram showing an example of the configuration of the transmissive adjustment mechanism 208. As shown in Figure 5(b), the transmissive adjustment mechanism 208 includes a plurality of transmissive elements 505 arranged in a grid pattern within the transmissive region, a transmissive drive unit 506, and a transmissive control unit 507.

[0055] The transmissive element 505 is an element having a transmissive structure that transmits light incident from the illumination unit 202 through the second imaging optical system 207. The transmissive element 505 includes, for example, a transmissive liquid crystal element.

[0056] The transmission drive unit 506 is a unit for independently driving each of the transmission elements 505 to a third state or a fourth state. Here, the third state is a state in which the transmission element 505 transmits light from the illumination unit 202 toward the mold 103 (mold-side mark group 108) and the substrate 105 (substrate-side mark group 111) (i.e., the light transmitted through the transmission element 505 illuminates the mold 103 and the substrate 105). The fourth state is a state in which the transmission element 505 does not transmit light from the illumination unit 202 toward the mold 103 and the substrate 105 (i.e., the transmission element 505 blocks the light and does not illuminate the mold 103 and the substrate 105).

[0057] The light transmission control unit 507 independently controls each of the light transmission elements 505 via the light transmission drive unit 506. For example, the light transmission control unit 507 controls the transmittance of any region set within the transmission region by selecting a third state or a fourth state (a light transmission element 505 that transmits light in the direction toward the mold 103 and the substrate 105) for each state of the light transmission element 505. Note that the function of the light transmission control unit 507 may also be performed by the control unit 112.

[0058] Thus, in this embodiment, the transmissive adjustment mechanism 208 can adjust the amount of light illuminating the mold-side mark group 108 and the substrate-side mark group 111 for each arbitrary region set within the transmissive region, and further, with the transmissive element 505 as a single unit (region).

[0059] Here, the positions in which the reflective adjustment mechanism 206 and the transmissive adjustment mechanism 208 are positioned will be described. In Figures 2A and 2B, the reflective adjustment mechanism 206 and the transmissive adjustment mechanism 208 are positioned at the intermediate imaging position MIM of the light illuminating the mold-side mark group 108 and the substrate-side mark group 111. However, in practice, considering the influence of the grid-like arrangement of reflective elements 501 and transmissive elements 505, it is preferable to position the reflective adjustment mechanism 206 and the transmissive adjustment mechanism 208 at a defocused position defocused from the intermediate imaging position MIM. For example, in order to prevent the grid-like arrangement of reflective elements 501 and transmissive elements 505 from forming an image and affecting the measurement accuracy of the marks, it is necessary to generate a blur equal to or greater than the arrangement pitch of the reflective elements 501 and transmissive elements 505. Specifically, the reflective adjustment mechanism 206 and the transmissive adjustment mechanism 208 should be positioned at a defocus position where the illuminance unevenness of the light incident on the mold-side mark group 108 and the substrate-side mark group 111 via the reflective adjustment mechanism 206 and the transmissive adjustment mechanism 208 is 10% or less. Therefore, the measurement unit 101 may further include a moving mechanism for moving the reflective adjustment mechanism 206 and the transmissive adjustment mechanism 208 to the defocus position.

[0060] Figure 6(a) is a schematic diagram showing an example of a region in the imaging unit 203 that is set to include the images of each mark in the mold-side mark group 108 and the substrate-side mark group 111 in the superimposed image 406, that is, a region for detecting (imaging) each mark. As shown in Figure 6(a), the imaging unit 203 includes a mold-side wide-area mark region 601, a substrate-side wide-area mark region 602, a high-precision X-mark region 603, a high-precision Y-mark region 604, and an off-mark region 605 as regions for detecting each mark. The mold-side wide-area mark region 601 is a region for detecting the mold-side wide-area mark 301 (mold-side wide-area mark image 402) of the mold-side mark group 108. The substrate-side wide-area mark region 602 is a region for detecting the substrate-side wide-area mark 304 (substrate-side wide-area mark image 403) of the substrate-side mark group 111. The high-precision X-mark area 603 is the area for detecting the mold-side high-precision X-mark 302 of the mold-side mark group 108 and the substrate-side high-precision X-mark 305 (high-precision X-overlay image 404) of the substrate-side mark group 111. The high-precision Y-mark area 604 is the area for detecting the mold-side high-precision Y-mark 303 of the mold-side mark group 108 and the substrate-side high-precision Y-mark 306 (high-precision Y-overlay image 405) of the substrate-side mark group 111. The non-mark area 605 is the area where no marks exist in the mold-side mark group 108 and the substrate-side mark group 111. These areas are basically set by the pixel control unit 502 or control unit 112 based on the design information (design dimensions) of each mark in the mold-side mark group 108 and the substrate-side mark group 111.

[0061] Figure 6(b) is a schematic diagram showing the superimposed region 601 to 605 set in the imaging unit 203 shown in Figure 6(a) superimposed on the superimposed image 401 shown in Figure 4(a). As shown in Figure 6(b), each region 601 to 604 of the imaging unit 203 is set to include the images of each mark in the mold-side mark group 108 and the substrate-side mark group 111 in the superimposed image 406.

[0062] In this embodiment, an arbitrary region is set within the reflective region of the reflective adjustment mechanism 206 or within the transmissive region of the transmissive adjustment mechanism 208, corresponding to (in conjunction with) each region 601 to 605 set in the imaging unit 203. In other words, an arbitrary region is set within the reflective region of the reflective adjustment mechanism 206 or the transmissive region of the transmissive adjustment mechanism 208 for adjusting the amount of light illuminating the mold-side mark group 108 and the substrate-side mark group 111, corresponding to each region 601 to 605. Therefore, in this embodiment, it is possible to adjust the amount of light illuminating the mold-side mark group 108 and the substrate-side mark group 111 via the reflective adjustment mechanism 206 or the transmissive adjustment mechanism 208 for each region containing the image of each mark of the mold-side mark group 108 and the substrate-side mark group 111. In the following, the reflective adjustment mechanism 206 and the transmissive adjustment mechanism 208 may be collectively referred to simply as the adjustment unit.

[0063] In this embodiment, for each region containing the image of each mark in the mold-side mark group 108 and the substrate-side mark group 111, the amount of light illuminating the mold-side mark group 108 and the substrate-side mark group 111 is adjusted via the adjustment unit so that such images do not become saturated. Specifically, for each region containing the image of each mark in the mold-side mark group 108 and the substrate-side mark group 111, the amount of light illuminating the mold-side mark group 108 and the substrate-side mark group 111 is adjusted via the adjustment unit so that a peak appears in the waveform obtained from the image of each mark. For example, for regions containing overexposed mark images, the reflectance or transmittance of such regions is adjusted to increase the amount of light illuminating the mold-side mark group 108 and the substrate-side mark group 111. Also, for regions containing underexposed mark images, the reflectance or transmittance of such regions is adjusted to decrease the amount of light illuminating the mold-side mark group 108 and the substrate-side mark group 111. This allows each image included in the superimposed image 406 to be acquired with the optimal amount of light, and the position of the mark corresponding to each image can be determined (measured) with high precision.

[0064] The reflectivity of the region containing the images of each mark in the mold-side mark group 108 and the substrate-side mark group 111 is adjusted by the reflection control unit 503 (control unit 112) by selecting a reflective element 501 from a plurality of reflective elements 501 to be in a first state (or second state). Here, selecting a reflective element 501 to be in a first state corresponds to selecting a reflective element 501 that reflects light in the direction toward the mold 103 and the substrate 105.

[0065] Furthermore, the transmittance of the region containing the images of each mark in the mold-side mark group 108 and the substrate-side mark group 111 is adjusted by the transmittance control unit 507 (control unit 112) by selecting a transmittance element 505 to be in the third state (or fourth state) from among a plurality of transmittance elements 505. Here, selecting a transmittance element 505 to be in the third state corresponds to selecting a transmittance element 505 that transmits light in the direction toward the mold 103 and the substrate 105.

[0066] Furthermore, it is preferable to adjust the light intensity for illuminating the non-mark areas, which do not include the marks in the mold-side mark group 108 and the substrate-side mark group 111, separately from the light intensity for illuminating the mold-side mark group 108 and the substrate-side mark group 111, via the adjustment unit. For example, it is preferable to make the light intensity for illuminating the non-mark areas smaller than the light intensity for illuminating the mold-side mark group 108 and the substrate-side mark group 111, specifically, to zero. This reduces the influence of stray light and noise from the non-mark areas (patterns other than the marks present therein), and suppresses a decrease in the measurement accuracy of the marks. However, it is not necessarily required to make the light intensity for illuminating the non-mark areas zero; it should be low enough so as not to affect the measurement accuracy of the marks.

[0067] Figure 7 shows an example of reflectance or transmittance individually set for each region containing the images of each mark in the mold-side mark group 108 and the substrate-side mark group 111 in the reflective adjustment mechanism 206 or the transmissive adjustment mechanism 208. Referring to Figure 7, in region 702 containing the high-precision Y superimposed image 405, the maximum reflectance or transmittance is set so that the high-precision Y superimposed image 405 does not become saturated. In region 703 containing the high-precision X superimposed image 404, a first reflectance or first transmittance lower than the maximum reflectance or transmittance is set so that the high-precision X superimposed image 404 does not become saturated. In region 704 containing the substrate-side wide-area mark image 403, a second reflectance or second transmittance lower than the first reflectance or first transmittance is set so that the substrate-side wide-area mark image 403 does not become saturated. In region 705 containing the mold-side wide-area mark image 402, a third reflectance or third transmittance lower than the second reflectance or second transmittance is set so that the mold-side wide-area mark image 402 does not become saturated. Furthermore, in the non-marked area 706, which does not include the image of each mark in the mold-side mark group 108 and the substrate-side mark group 111, a minimum reflectivity or transmittance is set to reduce the effects of stray light and noise.

[0068] Figure 8 shows an example of the result of selecting reflective elements 501 or transmitting elements 505 that reflect or transmit light in the direction toward the mold 103 and substrate 105, with respect to the reflectance or transmittance of each region shown in Figure 7. In Figure 8, the reflective elements 501 or transmitting elements 505 that reflect or transmit light in the direction toward the mold 103 and substrate 105 are shown in white. In this way, by spatially controlling the reflective elements 501 or transmitting elements 505 for each region containing the image of each mark of the mold-side mark group 108 and the substrate-side mark group 111, the reflectance or transmittance of each region shown in Figure 7 can be achieved. In other words, in this embodiment, the amount of light illuminating each mark can be adjusted by selecting reflective elements 501 or transmitting elements 505 that reflect or transmit light in the direction toward the mold 103 and substrate 105 for each region containing the image of each mark.

[0069] In this embodiment, the reflective element 501 or the transmissive element 505 is set to either illuminate the mark (first state or third state) or not illuminate the mark (second state or fourth state). However, when the reflective element 501 or the transmissive element 505 illuminates the mark, the state of the reflective element 501 or the transmissive element 505 may be controlled in steps to provide a gradation in the amount of light illuminating the mark.

[0070] Furthermore, by temporally controlling the state of the reflective element 501 or the transmissive element 505 for each region containing the image of each mark in the mold-side mark group 108 and the substrate-side mark group 111, it is also possible to adjust the amount of light illuminating the mold-side mark group 108 and the substrate-side mark group 111.

[0071] Referring to Figures 9(a), 9(b), 9(c), and 9(d), the temporal control of the state of the reflective element 501 or the transmissive element 505 for each region containing the image of each mark in the mold-side mark group 108 and the substrate-side mark group 111 will be explained. In Figures 9(a) to 9(d), the vertical axis represents the reflectance or transmittance of the region containing the image of each mark, and the horizontal axis represents time (t). Furthermore, the period during which the reflective element 501 or the transmissive element 505 is controlled to a first or third state, in which it reflects or transmits light in the direction toward the mold 103 and the substrate 105, is indicated by the region IR.

[0072] Figure 9(a) shows an example of controlling the state of the reflective element 501 or the transmissive element 505 when the reflectance or transmittance of the region containing the image of each mark is set to the maximum reflectance or maximum transmittance. Figure 9(d) shows an example of controlling the state of the reflective element 501 or the transmissive element 505 when the reflectance or transmittance of the region containing the image of each mark is set to the minimum reflectance or minimum transmittance. Figures 9(b) and 9(c) show an example of controlling the state of the reflective element 501 or the transmissive element 505 when the reflectance or transmittance of the region containing the image of each mark is set to the maximum reflectance or a transmittance between the maximum transmittance and the minimum reflectance or minimum transmittance.

[0073] Referring to Figures 9(b) and 9(c), the reflection time or transmission time T1 required to obtain the desired transmittance between the maximum and minimum transmittance can be determined by multiplying the required reflectance or transmittance by the control period T. For example, if the required reflectance or transmittance is 30% and the control period T is 10 ms, the reflection time or transmission time T1 will be 10 ms × 0.3 = 0.3 ms. Therefore, by controlling the reflective element 501 or the transmitting element 505 to the first or third state for 3 ms and to the second or fourth state for 7 ms during the control period T, the reflectance or transmittance can be set to 30%. Note that the reflection time or transmission time T1 is adjusted (changed) according to the required reflectance or transmittance in the region containing the image of each mark.

[0074] Furthermore, the method for obtaining the required reflectance or transmittance in the region containing the image of each mark in the mold-side mark group 108 and the substrate-side mark group 111 is not limited to spatially or temporally controlling (decimating) the reflective elements 501 or the transmissive elements 505. For example, it is also possible to obtain the required reflectance or transmittance in the region containing the image of each mark by uniformly controlling (setting to the same state) the reflective elements 501 or the transmissive elements 505. Specifically, by directly setting the reflectance or transmittance of the reflective elements 501 or the transmissive elements 505 to the required reflectance or transmittance, the required reflectance or transmittance can be obtained in the region containing the image of each mark even if the reflective elements 501 or the transmissive elements 505 are uniformly controlled. As a method for setting the reflective elements 501 or the transmissive elements 505 to the required reflectance or transmittance, for example, it is conceivable to control the first or third state of the reflective elements 501 or the transmissive elements 505 to multiple subdivided states, thereby giving the reflectance or transmittance gradation.

[0075] In this embodiment, the relative positions of the mold-side mark group 108 and the substrate-side mark group 111 are measured by a measuring unit 101 including a reflective adjustment mechanism 206 or a transmissive adjustment mechanism 208, and the mold 103 and the substrate 105 are aligned based on these relative positions.

[0076] Specifically, first, the mold-side mark group 108 and the substrate-side mark group 111, which are located within one field of view of the imaging unit 203 (image sensor), are simultaneously imaged by the imaging unit 203 to obtain a superimposed image 401. This simultaneously yields a wide-area mold-side mark image 402, a wide-area substrate-side mark image 403, a high-precision X superimposed image 404 (interference fringes), and a high-precision Y superimposed image 405 (interference fringes).

[0077] Next, the positions of the respective imaging units 203 (image sensors) of the mold-side wide-area mark image 402 and the substrate-side wide-area mark image 403 with respect to their imaging areas are determined, and the positional relationship between the mold-side mark group 108 and the substrate-side mark group 111 is determined. At the same time, the high-precision positional relationship between the mold-side mark group 108 and the substrate-side mark group 111 is determined from the high-precision X-overlay image 404 and the high-precision Y-overlay image 405.

[0078] In this embodiment, since the high-precision X superimposed image 404 and the high-precision Y superimposed image 405 are interference fringes, in principle, it is not possible to measure positional deviations larger than the period of these interference fringes. In other words, a high-precision positional relationship between the mold-side mark group 108 and the substrate-side mark group 111 can be obtained when the positional relationship between the mold-side mark group 108 and the substrate-side mark group 111 obtained from the mold-side wide-area mark image 402 and the substrate-side wide-area mark image 403 is less than or equal to the period of the interference fringes. Therefore, the resolution of the mold-side wide-area mark 301 and the substrate-side wide-area mark 304 must be less than or equal to the period of the interference fringes generated by the superimposition (combination) of the high-precision marks on the mold side and the high-precision marks on the substrate side. The high-precision marks on the mold side are the mold-side high-precision X mark 302 and the mold-side high-precision Y mark 303, and the high-precision marks on the substrate side are the substrate-side high-precision X mark 305 and the substrate-side high-precision Y mark 306. The positional relationship obtained from such high-precision marks is the sum of the measured value of the high-precision mark and the product of the integer value of the quotient between the period of the wide-range mark and the period of the interference fringes, and the period of the interference fringes.

[0079] In this embodiment, the positional relationship between the shot area and the mold 103 (pattern) is determined from the positional relationship between the substrate-side mark group 111 provided in the shot area on the substrate and the corresponding mold-side mark group 108, and from the design position of the substrate-side mark group 111 within the shot area. The positional relationship between the shot area on the substrate and the mold 103 (the positional relationship between the mold 103 and the substrate 105) includes, for example, X translation, Y translation, rotation, X magnification, Y magnification, and rhombus shape. Of the positional relationship between the shot area on the substrate and the mold 103, the X translation, Y translation, and rotation are reflected in the drive command values ​​of the substrate stage 109, and the substrate stage 109 is driven to reduce alignment errors. In addition, the X magnification, Y magnification, and rhombus shape are reflected in the drive command values ​​of the magnification / shape correction mechanism, and the magnification / shape correction mechanism is driven to reduce alignment errors. The magnification and shape correction mechanism can be implemented, for example, as a mechanism that deforms the mold 103 (pattern) by applying force to the side of the mold 103, or as a mechanism that deforms the substrate 105 (shot area) by applying heat to the substrate 105. The positional relationship between the shot area on the substrate and the mold 103, and the method for correcting it, are not limited. In this way, the mold 103 and the substrate 105 are aligned by simultaneously imaging the mold-side mark group 108 and the substrate-side mark group 111 to obtain a superimposed image 401 and repeating the alignment operation while determining the positional relationship between the mold 103 and the substrate 105.

[0080] The setting of the region containing the images of each mark in the mold-side mark group 108 and the substrate-side mark group 111 in the superimposed image 406 will now be explained. As described above, the region containing the images of each mark in the mold-side mark group 108 and the substrate-side mark group 111 is basically set based on the design information of each mark.

[0081] However, as shown in Figure 10(a), there may be cases where the position of the substrate-side mark group 111 is misaligned with the imaging area (field of view) of the imaging unit 203. In this case, even if the region containing the image of each mark is set based on the design information of each mark in the mold-side mark group 108 and the substrate-side mark group 111, it may not be possible to detect the substrate-side wide-area mark 304 in the substrate-side wide-area mark region 602, for example. Therefore, as shown in Figure 10(b), the region containing the image of each mark may be set based on the position of the image of each mark in the mold-side mark group 108 and the substrate-side mark group 111 in the superimposed image 406 (mark image) acquired by the imaging unit 203. In other words, the region for detecting each mark in the imaging unit 203 (image sensor) may be set so that the image of each mark in the mold-side mark group 108 and the substrate-side mark group 111 is included in the superimposed image 406. Figure 10(a) is a schematic diagram showing an example of a superimposed image 401 acquired by the imaging unit 203, and Figure 10(b) is a schematic diagram showing the superimposed image 401 shown in Figure 10(a) with the regions 601 to 605 set in the imaging unit 203 superimposed on it.

[0082] Furthermore, during the alignment of the mold 103 and the substrate 105, the positional relationship between the mold-side mark group 108 and the substrate-side mark group 111 changes dynamically as the alignment operation is repeated. Therefore, during the period in which the mold 103 and the substrate 105 are aligned, it is preferable to dynamically set the region containing the image of each mark based on the position of the image of each mark in the mold-side mark group 108 and the substrate-side mark group 111 in the superimposed image 406 acquired by the imaging unit 203.

[0083] Thus, the settings of each region 601 to 605 in the imaging unit 203 may be changed depending on the position of the substrate-side mark group 111 relative to the imaging area (field of view) of the imaging unit 203. In this case, depending on the change in the settings of each region 601 to 605 in the imaging unit 203, an arbitrary area for adjusting the amount of light illuminating each mark is set within the reflective area of ​​the reflective adjustment mechanism 206 or within the transmissive area of ​​the transmissive adjustment mechanism 208.

[0084] Furthermore, when aligning the mold 103 and the substrate 105, the positional relationship between the mold-side mark group 108 and the substrate-side mark group 111 may be significantly misaligned. In this case, it is assumed that the superimposed image 406 acquired by the imaging unit 203 does not include images of each mark in the mold-side mark group 108 and the substrate-side mark group 111. Therefore, each mark cannot be detected in the regions set based on the design information of each mark in the mold-side mark group 108 and the substrate-side mark group 111. In such cases, the setting of the region corresponding to each mark is released, and the amount of light illuminating each mark is adjusted to be the same across the entire imaging area of ​​the imaging unit 203 via the reflective adjustment mechanism 206 or the transmissive adjustment mechanism 208 to acquire the superimposed image 406. Then, the images of each mark in the mold-side mark group 108 and the substrate-side mark group 111 are searched for in the superimposed image 406, and a new region for detecting each mark in the imaging unit 203 is set so that the images of each mark detected by the search are included. Furthermore, depending on the newly defined regions 601 to 605, any region for adjusting the light intensity of the light illuminating each mark is set within the reflective region of the reflective adjustment mechanism 206 or within the transmissive region of the transmissive adjustment mechanism 208.

[0085] In this embodiment, the process of adjusting the light intensity to illuminate the mold-side mark group 108 and the substrate-side mark group 111 to be the same was explained using the example of a case where the positional relationship between the mold-side mark group 108 and the substrate-side mark group 111 is significantly misaligned. However, adjusting the light intensity to illuminate the mold-side mark group 108 and the substrate-side mark group 111 to be the same is also useful when the light intensity illuminating each mark is not appropriately adjusted. For example, if the light intensity illuminating each mark is not appropriate, it becomes possible to search for the image of each mark in the mold-side mark group 108 and the substrate-side mark group 111 by making the light intensity uniform across the entire imaging area.

[0086] Thus, in this embodiment, the imprint apparatus 100 can acquire images of each mark in the mold-side mark group 108 and the substrate-side mark group 111 with an optimal amount of light, and accurately determine (measure) the position of the mark corresponding to each image. Therefore, according to this embodiment, an advantageous technique is provided for measuring the relative position between the mold-side mark group 108 and the substrate-side mark group 111, and the mold 103 and the substrate 105 can be aligned with high precision.

[0087] The cured pattern formed using the imprint apparatus 100 in this embodiment is used permanently on at least a part of various articles, or temporarily when manufacturing various articles. Articles include electrical circuit elements, optical elements, MEMS, recording elements, sensors, or molds. Examples of electrical circuit elements include volatile or non-volatile semiconductor memories such as DRAM, SRAM, flash memory, and MRAM, as well as semiconductor elements such as LSI, CCD, image sensors, and FPGAs. Examples of molds include molds for imprinting.

[0088] The pattern of the cured material is either used as is as a component of at least some of the articles described above, or temporarily used as a resist mask. After etching or ion implantation is performed during the substrate processing process, the resist mask is removed.

[0089] Next, we will explain the specific manufacturing method of the product. As shown in Figure 11(a), a substrate such as a silicon wafer with a workpiece material such as an insulator formed on its surface is prepared, and then an imprint material is applied to the surface of the workpiece material by an inkjet method or the like. Here, we show how multiple droplet-shaped imprint materials are applied to the substrate.

[0090] As shown in Figure 11(b), the mold for imprinting is positioned so that the side with the raised and recessed pattern faces the imprint material on the substrate. As shown in Figure 11(c), the substrate to which the imprint material has been applied and the mold are brought into contact, and pressure is applied. The imprint material fills the gap between the mold and the workpiece. In this state, when light is shone through the mold as curing energy, the imprint material hardens.

[0091] As shown in Figure 11(d), after the imprint material has hardened, when the mold and substrate are separated, a pattern of the hardened imprint material is formed on the substrate. In this pattern, the recesses of the mold correspond to the protrusions of the hardened material, and the protrusions of the mold correspond to the recesses of the hardened material. In other words, the pattern of the mold's irregularities has been transferred to the imprint material.

[0092] As shown in Figure 11(e), when etching is performed using the cured material pattern as an etching-resistant mask, the parts of the workpiece surface where there is no cured material, or where a thin layer remains, are removed, forming grooves. As shown in Figure 11(f), when the cured material pattern is removed, an article with grooves formed on the surface of the workpiece can be obtained. Here, the cured material pattern was removed, but it may also be used without removal after processing, for example, as an interlayer insulating film included in semiconductor devices, i.e., as a component of the article.

[0093] In this embodiment, an imprint apparatus was described as an example of a lithography apparatus that forms a pattern on a substrate using a master plate. However, the lithography apparatus is not limited to an imprint apparatus; it may also be an exposure apparatus that projects a pattern from a master plate (mask or reticle) onto a substrate to expose the substrate.

[0094] The disclosures herein include the following measuring devices, lithography devices, and methods for manufacturing articles.

[0095] (Item 1) A measuring device for measuring the relative position between a first group of marks provided on the original plate and a second group of marks provided on the substrate, An image sensor that simultaneously images the first group of marks and the second group of marks located within a single field of view to acquire a mark image, An adjustment unit for adjusting the light intensity of the light illuminating the first group of marks and the second group of marks, A control unit adjusts the light intensity via the adjustment unit for each region including the image of each mark in the first mark group and the second mark group, A measuring device characterized by having [a certain feature].

[0096] (Item 2) The adjustment unit includes a plurality of reflective elements arranged in a grid pattern, The control unit adjusts the amount of light for each region by selecting a reflective element from the plurality of reflective elements that reflects the light in a direction toward the first mark group and the second mark group. The measuring device described in item 1, characterized by the features described herein.

[0097] (Item 3) The measuring device according to item 2, characterized in that the control unit adjusts the amount of light by spatially or temporally selecting a reflective element that reflects the light toward the first group of marks and the second group of marks for each region.

[0098] (Item 4) The adjustment unit includes a plurality of transparent elements arranged in a grid pattern, The control unit adjusts the amount of light for each region by selecting a transparent element from the plurality of transparent elements that transmits light in the direction toward the first mark group and the second mark group. The measuring device described in item 1, characterized by the features described herein.

[0099] (Item 5) The measuring device according to item 4, characterized in that the control unit adjusts the amount of light by spatially or temporally selecting a transmitting element that transmits the light in the direction toward the first group of marks and the second group of marks for each region.

[0100] (Item 6) The measuring device according to any one of items 1 to 5, characterized in that the adjustment unit is located at a position defocused from the intermediate imaging position of the light illuminating the first group of marks and the second group of marks.

[0101] (Item 7) The measuring device according to item 6, characterized in that the position defocused from the intermediate imaging position is a position in which the illuminance unevenness of the light incident on the first mark group and the second mark group via the adjustment unit is 10% or less.

[0102] (Item 8) The measuring device according to any one of items 1 to 7, characterized in that the control unit adjusts, via the adjustment unit, the amount of light that illuminates the areas outside the marks that do not include the marks of the first mark group and the second mark group, separately from the amount of light that illuminates the first mark group and the second mark group.

[0103] (Item 9) The measuring device according to item 8, characterized in that the control unit, via the adjustment unit, reduces the amount of light illuminating the area outside the marks to less than the amount of light illuminating the first group of marks and the second group of marks.

[0104] (Item 10) The measuring device according to item 9, characterized in that the control unit, via the adjustment unit, reduces the amount of light illuminating the area outside the mark to zero.

[0105] (Item 11) The measuring device according to any one of items 1 to 10, characterized in that the control unit sets the area based on the design information of each mark in the first mark group and the second mark group.

[0106] (Item 12) The measuring device according to any one of items 1 to 11, characterized in that the control unit sets the region based on the position of the images of each mark in the first mark group and the second mark group in the mark image acquired by the image sensor.

[0107] (Item 13) The measuring device according to any one of items 1 to 12, characterized in that the control unit dynamically sets the region based on the position of the images of each mark in the first mark group and the second mark group in the mark image acquired by the image sensor during the period for measuring the relative position.

[0108] (Item 14) The measuring device according to any one of items 1 to 13, characterized in that the control unit adjusts the light intensity to be the same across the entire imaging area for imaging the first mark group and the second mark group via the adjustment unit when the images of each mark in the first mark group and the second mark group are not included in the mark image.

[0109] (Item 15) The measuring device according to any one of items 1 to 14, characterized in that at least one of the first group of marks and the second group of marks includes a plurality of marks with different optical properties.

[0110] (Item 16) The aforementioned first group of marks includes a first rough inspection mark and a first detailed inspection mark, The second group of marks includes a second rough inspection mark and a second fine inspection mark that is combined with the first fine inspection mark. A measuring device as described in any one of items 1 to 15, characterized by the above.

[0111] (Item 17) A lithography apparatus for forming a pattern on a curable composition on a substrate using a master plate, A measuring unit that measures the relative position between the first group of marks provided on the original plate and the second group of marks provided on the substrate, The measurement unit measures the relative position and the alignment unit aligns the original plate and the substrate based on that relative position, It has, The aforementioned measuring unit is An image sensor that simultaneously images the first group of marks and the second group of marks located within a single field of view to acquire a mark image, An adjustment unit for adjusting the light intensity of the light illuminating the first group of marks and the second group of marks, A control unit adjusts the light intensity via the adjustment unit for each region including the image of each mark in the first mark group and the second mark group, including, A lithography apparatus characterized by the following features.

[0112] (Item 18) The lithography apparatus according to item 17, characterized in that it brings the original plate and the curable composition into contact to form a pattern of the curable composition on which the pattern of the original plate has been transferred.

[0113] (Item 19) A step of forming a pattern on a substrate using a lithography apparatus as described in item 17 or 18, A step of processing the substrate on which the pattern has been formed in the above step, A process for manufacturing an article from the processed substrate, A method for manufacturing an article, characterized by having the following:

[0114] The invention is not limited to the embodiments described above, and various modifications and variations are possible without departing from the spirit and scope of the invention. Accordingly, claims are attached to disclose the scope of the invention. [Explanation of symbols]

[0115] 100: Imprint device 101: Measurement unit 103: Mold 105: Substrate 108: Mold-side mark group 111: Substrate-side mark group 112: Control unit 203: Imaging unit 206: Reflective type adjustment mechanism 208: Transmissive type adjustment mechanism

Claims

1. A measuring device for measuring the relative position between a first group of marks provided on the original plate and a second group of marks provided on the substrate, An image sensor that simultaneously images the first group of marks and the second group of marks located within a single field of view to acquire a mark image, An adjustment unit for adjusting the light intensity of the light illuminating the first group of marks and the second group of marks, A control unit adjusts the light intensity via the adjustment unit for each region including the image of each mark in the first mark group and the second mark group, A measuring device characterized by having [a certain feature].

2. The adjustment unit includes a plurality of reflective elements arranged in a grid pattern, The control unit adjusts the amount of light for each region by selecting a reflective element from the plurality of reflective elements that reflects the light in a direction toward the first group of marks and the second group of marks. The measuring device according to feature 1.

3. The measuring device according to claim 2, characterized in that the control unit adjusts the amount of light by spatially or temporally selecting a reflective element that reflects the light toward the first group of marks and the second group of marks for each region.

4. The adjustment unit includes a plurality of transparent elements arranged in a grid pattern, The control unit adjusts the amount of light for each region by selecting a transparent element from the plurality of transparent elements that transmits light in the direction toward the first mark group and the second mark group. The measuring device according to feature 1.

5. The measuring device according to claim 4, characterized in that the control unit adjusts the amount of light by spatially or temporally selecting a light-transmitting element that transmits light in the direction toward the first mark group and the second mark group for each region.

6. The measuring device according to claim 1, characterized in that the adjustment unit is positioned at a position defocused from the intermediate imaging position of the light illuminating the first group of marks and the second group of marks.

7. The measuring device according to claim 6, characterized in that the position defocused from the intermediate imaging position is a position in which the illuminance unevenness of the light incident on the first mark group and the second mark group via the adjustment unit is 10% or less.

8. The measuring device according to claim 1, characterized in that the control unit adjusts, via the adjustment unit, the amount of light that illuminates the area outside the marks that does not include each of the marks in the first mark group and the second mark group, separately from the amount of light that illuminates the first mark group and the second mark group.

9. The measuring device according to claim 8, characterized in that the control unit, via the adjustment unit, reduces the amount of light illuminating the area outside the marks to less than the amount of light illuminating the first group of marks and the second group of marks.

10. The measuring device according to claim 9, characterized in that the control unit, via the adjustment unit, sets the amount of light illuminating the area outside the mark to zero.

11. The measuring device according to claim 1, characterized in that the control unit sets the region based on the design information of each mark in the first mark group and the second mark group.

12. The measuring device according to claim 1, characterized in that the control unit sets the region based on the position of the images of each mark in the first mark group and the second mark group in the mark image acquired by the image sensor.

13. The measuring device according to claim 1, characterized in that the control unit dynamically sets the region based on the position of the images of each mark in the first mark group and the second mark group in the mark image acquired by the image sensor during the period for measuring the relative position.

14. The measuring device according to claim 1, characterized in that the control unit adjusts the light intensity to be the same across the entire imaging area for imaging the first mark group and the second mark group, via the adjustment unit, when the images of each mark in the first mark group and the second mark group are not included in the mark image.

15. The measuring device according to claim 1, characterized in that at least one of the first group of marks and the second group of marks includes a plurality of marks with different optical properties.

16. The aforementioned first group of marks includes a first rough inspection mark and a first detailed inspection mark, The second group of marks includes a second rough inspection mark and a second fine inspection mark that is combined with the first fine inspection mark. The measuring device according to feature 1.

17. A lithography apparatus for forming a pattern on a curable composition on a substrate using a master plate, A measuring unit that measures the relative position between the first group of marks provided on the original plate and the second group of marks provided on the substrate, The measurement unit measures the relative position and the alignment unit aligns the original plate and the substrate based on that relative position, It has, The aforementioned measuring unit is An image sensor that simultaneously images the first group of marks and the second group of marks located within a single field of view to acquire a mark image, An adjustment unit for adjusting the light intensity of the light illuminating the first group of marks and the second group of marks, A control unit adjusts the light intensity via the adjustment unit for each region including the image of each mark in the first mark group and the second mark group, including, A lithography apparatus characterized by the following features.

18. The lithography apparatus according to claim 17, characterized in that the original plate and the curable composition are brought into contact to form a pattern of the curable composition on which the pattern of the original plate has been transferred.

19. A step of forming a pattern on a substrate using the lithography apparatus described in claim 17, A step of processing the substrate on which the pattern has been formed in the above step, A process for manufacturing an article from the processed substrate, A method for manufacturing an article, characterized by having the following:

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