Ladder filter device and filter device

Abstract

This invention provides a filter device for use in communication equipment, a method for manufacturing the same, and a duplexer. [Solution] The RF filter circuit 100 includes a first chip and a second chip. The first chip has a first material lamination and includes one or more series resonators X1, X3, X5 of the ladder filter circuit. The second chip has a second material lamination and includes one or more shunt resonators X2, X4, X6 of the ladder filter circuit. The first material lamination and the second material lamination are different. The first chip and the second chip are mounted on a circuit card that includes at least one conductor for forming an electrical connection between one of the one or more series resonators and one of the one or more shunt resonators.

Description

Technical Field

[0001] The present disclosure relates to a radio frequency filter using a surface acoustic wave resonator, and more particularly, to a filter for use in a communication device.

Background Art

[0002] A radio frequency (RF) filter is a two-port device configured to pass some frequencies and block others. "Pass" means transmitting with a relatively low insertion loss, and "block" means blocking or substantially attenuating. The range of frequencies passed by the filter is called the "passband" of the filter. The range of frequencies not passed by such a filter is called the "stopband" of the filter. A typical RF filter has at least one passband and at least one stopband. Specific requirements for the passband or stopband depend on the particular application. For example, the "passband" can be defined as the frequency range where the insertion loss of the filter is less than a defined value such as 1 dB, 2 dB, or 3 dB. The "stopband" can be defined as the frequency range where the insertion loss of the filter is greater than a defined value such as 20 dB, 30 dB, 40 dB, or more, depending on the application. [[ID=3,6]]

[0003] RF filters are used in communication systems where information is transmitted over a wireless link. For example, RF filters are used in base stations, mobile phones and computing devices, satellite transceivers and terrestrial stations, IoT (Internet of Things) devices, laptop computers and tablets, fixed-point wireless links, and the RF front ends of other communication systems. It can be found at the end. RF filters are also used in radar and electronic information warfare systems. It is being done.

[0004] RF filters are typically designed for specific applications, addressing insertion loss, rejection, isolation, power handling, and linearity. To achieve the best compromise between performance parameters such as performance, size, and cost, many designs are used. This requires accounting trade-offs. Specific design and manufacturing methods and enhancements will meet these requirements. It can bring benefits to one or more of these simultaneously.

[0005] Improving the performance of RF filters in wireless systems will have a wide-ranging impact on system performance. It is possible. By utilizing improvements to the RF filter, it is possible to increase the cell size, extend battery life, and Improved data rates, increased network capacity, reduced costs, enhanced security, and reliability. This can provide improvements to system performance, such as enhanced performance. These improvements include, for example, RF modules, RF transceivers, mobile or fixed subsystems, or networks At various levels, whether individually or in combination, this can be achieved at many levels of wireless systems. It is possible. [Brief explanation of the drawing]

[0006] [Figure 1A] This is a schematic diagram of an exemplary RF ladder filter circuit incorporating an elastic wave resonator. [Figure 1B] This is a schematic diagram of an alternative implementation of an RF ladder filter circuit incorporating an elastic wave resonator. [Figure 2A] This is a simplified schematic cross-sectional view of the first elastic wave resonator. [Figure 2B] This is a simplified schematic cross-sectional view of the second elastic wave resonator. [Figure 3A] This is a simplified schematic cross-sectional view of the third elastic wave resonator. [Figure 3B] Simplified schematic cross-sectional view of a fourth elastic wave resonator. [Figure 4A] Simplified schematic cross-sectional view of a fifth elastic wave resonator. [Figure 4B] Simplified schematic cross-sectional view of a sixth elastic wave resonator. [Figure 5] Simplified schematic plan view of a conventional ladder filter. [Figure 6] Simplified schematic plan view of a split ladder implementation of a bandpass filter. [Figure 7] Simplified schematic cross-sectional view of a split ladder implementation of an exemplary bandpass filter of FIG. 6. [Figure 8] Chart comparing S12 of two implementations of an exemplary bandpass filter. [Figure 9] Chart of S12 of a split ladder implementation of an exemplary bandpass filter. [Figure 10A] Simplified schematic plan view of a two-chip duplexer. [Figure 10B] Simplified schematic plan view of a split ladder implementation of a duplexer. [Figure 11] Simplified schematic plan view of another split ladder implementation of a duplexer. [Figure 12] Flowchart of a method of manufacturing a split ladder filter device.

[0007] Throughout this description, three-digit reference numerals are assigned to the elements represented in the drawings. The lower two digits are specific to the element, and the upper one or two digits are the drawing number in which the element is first introduced. Elements not described in connection with the drawings may be presumed to have the same characteristics and functions as the foregoing elements having the same

Best Mode for Carrying Out the Invention

[0008] FIG. 1A shows a simplified schematic circuit diagram of an exemplary RF filter circuit 100 incorporating six surface acoustic wave resonators X1 to X6, labeled and arranged in a configuration commonly referred to as a "ladder" configuration. A ladder filter of this configuration is commonly used as a bandpass filter in a communication device. The filter circuit 100 can be, for example, a transmit filter or a receive filter for incorporation into a communication device. The filter circuit 100 is a two-port network, and one terminal of each port is typically connected to a signal ground. The filter circuit 100 includes three series resonators (X1, X3, and X5) connected in series between a first port (port 1) and a second port (port 2). Either port can be an input to the filter and the other port can be an output. The filter circuit 100 includes three shunt resonators (X2, X4, and X6). Each shunt resonator is connected between ground and either a junction of adjacent series resonators or an input port or an output port. The schematic diagram of FIG. 1A is simplified and does not show passive components such as the inductance inherent in the conductors interconnecting the resonators. The use of six surface acoustic wave resonators (three series resonators and three shunt resonators) is exemplary. A bandpass filter circuit can include more than six or less than six resonators (more than three or less than three series resonators and more than three or less than three shunt resonators). shown. This ladder filter configuration is commonly used as a bandpass filter in a communication device. The filter circuit 100 can be, for example, a transmit filter or a receive filter for incorporation into a communication device. The filter circuit 100 is a two-port network, and one terminal of each port is typically connected to a signal ground. The filter circuit 100 includes three series resonators (X1, X3, and X5) connected in series between a first port (port 1) and a second port (port 2). Either port can be an input to the filter and the other port can be an output. The filter circuit 100 includes three shunt resonators (X2, X4, and X6). Each shunt resonator is connected between ground and either a junction of adjacent series resonators or an input port or an output port. The schematic diagram of FIG. 1A is simplified and does not show passive components such as the inductance inherent in the conductors interconnecting the resonators. The use of six surface acoustic wave resonators (three series resonators and three shunt resonators) is exemplary. A bandpass filter circuit can include more than six or less than six resonators (more than three or less than three series resonators and more than three or less than three shunt resonators). The filter circuit 100 includes three shunt resonators (X2, X4, and X6). Each shunt resonator is connected between ground and either a junction of adjacent series resonators or an input port or an output port. The schematic diagram of FIG. 1A is simplified and does not show passive components such as the inductance inherent in the conductors interconnecting the resonators. The use of six surface acoustic wave resonators (three series resonators and three shunt resonators) is exemplary. A bandpass filter circuit can include more than six or less than six resonators (more than three or less than three series resonators and more than three or less than three shunt resonators). The use of six surface acoustic wave resonators (three series resonators and three shunt resonators) is exemplary. A bandpass filter circuit can include more than six or less than six resonators (more than three or less than three series resonators and more than three or less than three shunt resonators).

[0009] FIG. 1B shows a simplified schematic circuit diagram of an alternative RF filter circuit 150. The filter circuit 150 is a two-port network, and the signals at each port are balanced, that is, the signals at the two terminals of each port are nominally equal in amplitude and 180 degrees out of phase. The filter circuit 150 is a two-port network, and the signals at each port are balanced, that is, the signals at the two terminals of each port are nominally equal in amplitude and 180 degrees out of phase. ​​​​ They are separated. For the purposes of this patent, the RF filter circuit 150 is considered a ladder filter. The resonators X1a, X1b, X3a, X3b, X5a, and X5b are series resonators. It is conceivable that resonators X2, X4, and X6 are shunt resonators. Ladder filter Circuit 150 is not commonly used, and all subsequent examples in this patent refer to the circuit shown in Figure 1A. A double filter configuration is assumed.

[0010] Each of the elastic wave resonators X1 to X6 is a bulk elastic wave (BAW) resonator, a film bulk elastic wave resonator. (FBAW) resonator, surface acoustic wave (SAW) resonator, temperature-compensated surface acoustic wave (TC-SAW) ) Resonator, bonded wafer acoustic resonator, described in U.S. Patent Application No. 16 / 230,443 Directionally excited film bulk acoustic resonator (XBAR), U.S. Patent Application No. 16 / 438,141 Solid-mount lateral excitation film bulk acoustic resonator (solidly-m) as described in issue number ounted transversely-excited film bulk ac (Oustic resonator) (SM-XBAR), or any other type of ammunition It may also be a seismic wave resonator. Current filters for seismic wave resonators are typically of the same type. It is a resonator.

[0011] Each elastic wave resonator exhibits very high admittance at the resonant frequency, and above the resonant frequency At high anti-resonant frequencies, it exhibits very low admittance. Simply put, each resonator has its own... At the resonant frequency, it is almost a short circuit, and at the anti-resonant frequency, it is an open circuit. This results in a bandpass The transmission between port 1 and port 2 of the filter circuit 100, 150 is via a shunt resonator. The resonant frequency and the anti-resonant frequency of the series resonator are very low. Typical ladder band passthrough. In a filter, the resonant frequency of the shunt resonator creates a stopband at frequencies below the passband. To achieve this, it is smaller than the lower end of the filter passband. The anti-resonant frequency of a shunt resonator is, In terms of type, it falls within the filter's passband. Conversely, the anti-resonant frequency of a series resonator falls within the passband. It is larger than the upper limit and creates a stopband at frequencies above the passband. The wavenumber typically falls within the filter's passband. In some designs, one or more waves fall within the filter's passband. A cant resonator can have a resonant frequency higher than the upper end of the passband.

[0012] Filter devices such as bandpass filter circuits 100 and 150, which include elastic wave resonators, Conventionally, materials deposited on a substrate, materials bonded to a substrate, or materials formed on a substrate This is achieved using multiple layers. The sequence of substrate and material layers is typically an elastic wave resonator and This is called "lamination" used to form a filter device. In this patent, the "material The term "lamination" refers to a regular sequence of material layers formed on a substrate. It is considered part of the material lamination. The term "element" refers to one of the layers within a substrate or material lamination. This means that at least one element in the material lamination (i.e., either the substrate or the layer) quartz, lithium niobate, lithium tantalate, gallium lanthanum silicate, gallium nitride It is a piezoelectric material such as aluminum or aluminum nitride. If the piezoelectric material is a single crystal, X, Y, and The orientation of the crystal axis of Z is known and consistent. One or more conductive layers and / or dielectric layers. One or more layers within a material lamination, such as, all elements of the material lamination are at all points on the elastic wave apparatus. It is not possible to create patterns using photolithography, as they do not exist in reality. Cut.

[0013] Figure 2A is a schematic cross-sectional view of the first exemplary elastic wave resonator 200. In this specification, the device 200 is opposite to the "bonded wafer resonator" (described with Figure 2B). (Incidentally), it is called a "non-junction SAW resonator." A "non-junction SAW resonator" has a thicker beam A conductive pattern 210 is formed on a piezoelectric plate 205 that is not bonded to a substrate or other surface. This can be characterized as such. This term encompasses both temperature-compensated and non-temperature-compensated SAW resonators. Includes. The conductor pattern 210 is formed on the surface of the plate 205 of the single-crystal piezoelectric material. Includes an interdigital transducer (IDT). Dimension p is the pin of the IDT's finger. The gap, or distance, is the spacing between conductors. The dimension λ=2p is measured across the surface of the piezoelectric plate 205. This is the wavelength of the sound wave that cuts and propagates. Multiple non-junction SAW resonators 200 are combined to form a filter. When forming a Luta device, the resonant frequencies of various resonators are selected by choosing the pitch of each resonator. It is set by and . Dimension h is the thickness of the conductor pattern. Dielectric with thickness td1 The body layer 215 may be deposited on top of the conductors of the conductor pattern or between the conductors. The dielectric layer 215 seals and maintains, for example, the electrode pattern and the surface of the piezoelectric plate 205. It may also be a thin passivation layer for protection. In a TC-SAW resonator, The electrolytic layer 215 is used to reduce the temperature coefficient of the resonator frequency, for example, SiO It may also be a relatively thick layer of 2.

[0014] The material lamination for non-jointed SAW resonators, such as the first exemplary elastic wave resonator 200, is piezoelectric. Includes a plate 205, a conductor pattern 210, and a dielectric layer 215. Piezoelectric plate 205 This is determined by the material type, thickness, and crystal axis orientation of the piezoelectric material. Conductor pattern 210 is defined by thickness h and material, and the material is, for example, aluminum, copper, gold. Molybdenum, tungsten, alloys thereof, and combinations thereof may also be used. Dielectric layer 21 5 is a material with a thickness td1, which can be, for example, silicon dioxide or silicon nitride. Therefore, it is defined when multiple non-junction SAW resonators 200 are incorporated into a filter device. The material lamination may include additional layers not shown in Figure 2A. For example, fill Generally, the device uses a second metal layer to increase the conductivity of the conductors that interconnect the resonators. Includes additional dielectric to interconnect the external circuit card and filter and form bumps. It may include a body layer and / or a third metal layer of thick gold or solder.

[0015] Figure 2B is a schematic cross-sectional view of a second exemplary elastic wave resonator 220. The device 220 is referred to herein as a "bonded wafer resonator." This is a thin wafer or plate 225 of single-crystal piezoelectric material bonded to a non-piezoelectric base 230. Characterized by: A thin wafer or plate 225 of single-crystal piezoelectric material is non-piezoelectric. Even if directly bonded to the base 230, or by one or more intermediate dielectric layers 240 The bonding may be indirect. The second elastic wave resonator 220 may be, for example, a bonded wafer SAW. Resonator, IHP (Incredibly High Performance) SAW It may be a vibrator or a plate wave resonator. The second elastic wave resonator 220 is made of a single crystal piezoelectric material. Includes a conductive pattern 235 including IDT formed on the surface of a thin wafer 225. The thickness of the turn is dimension h (see Figure 2A). Dimension tp is the piezoelectric material wafer 225. This is the thickness. Dimension p is the finger pitch of the IDT, i.e., the distance between conductors. The dimension λ=2p is the sound wave that propagates across the surface of the piezoelectric wafer 225 or through its interior. It is the wavelength. When multiple bonded wafer resonators 220 are combined to form a filter device, In total, the resonant frequencies of various resonators are set by selecting the IDT pitch of each resonator. The dielectric layer 245 with thickness td1 (see Figure 2A) is, as mentioned above, the conductor pattern It may be deposited on top of the conductor or deposited between the conductors. A second dielectric having a thickness td2 The body layer 240 can be placed between the wafer 225 and the base 230. In this configuration, two dielectric layers can be placed between the wafer 225 and the base 230.

[0016] Material lamination for bonded wafer resonators, such as the second exemplary elastic wave resonator 220, Base 230, one or more underlying dielectric layers IC layer 240 (if present), piezoelectric wafer 225, conductor pattern 235 , and a dielectric layer 245. The base 230 is defined by material and thickness. The dielectric layer 240 is defined by the material type and thickness td2 of each layer. Piezoelectric wafer 225 is defined by the material type, thickness tp, and crystal axis orientation of the piezoelectric material. The body pattern 235 is defined by its thickness h (see Figure 2A) and material. Dielectric layer 24 5 is defined by the thickness td1 and the material. Multiple bonded wafer resonators 220 are filled When incorporated into a ruta, the material lamination can include additional layers, as mentioned above.

[0017] Figure 3A is a schematic cross-sectional view of a third exemplary elastic wave resonator 300. Third elastic wave resonator The device 300 is referred to herein as a "floating diaphragm resonator." The resonator is a single-crystal piezoelectric material floating above a cavity 330 formed within a non-piezoelectric base 315. It is characterized by a thin diaphragm 335. The third elastic wave resonator 300 is, for example For example, the XBAR resonator described in U.S. Patent Application No. 16 / 230,443, or any other It may be any other type of acoustic resonator. The third elastic wave resonator 300 is a single-crystal piezoelectric The material includes a conductive pattern 305 containing IDT formed on the surface of a thin wafer 310, This single-crystal piezoelectric material is attached to or bonded to the non-piezoelectric base 315. Third If the elastic wave resonator is a plate wave resonator, the conductor pattern is a Bragg reflector (as shown in Figure 3A). It may include one or more dielectric layers 320 between the wafer 310 and the base 315. It may exist between them. The cavity 330 is formed within the base 315 and the dielectric layer 320. Therefore, if a cavity exists, as a result, a portion of the wafer 310 will overlap the cavity 330. A diaphragm 335 is formed. The fingers of the IDT are positioned on the diaphragm 335. The dielectric layer 325 is deposited on the fingers of the conductor pattern 305, but the fingers It may be deposited in between.

[0018] Material lamination for floating diaphragm resonators, such as the third exemplary elastic wave resonator 300. The base 315, one or more lower dielectric layers 320 (if present), and piezoelectric wafer The base 315 includes a conductor pattern 305 and a dielectric layer 325. It is determined by the following. The lower dielectric layer 320 is determined by the material type and thickness td2 of each layer. The piezoelectric wafer 310 is defined by the material type of the piezoelectric material, the thickness tp, and the crystal axis. The orientation is defined. The conductor pattern 305 is defined by its thickness and material. The dielectric layer 325 is defined by its thickness td1 and material. Multiple elastic wave resonators 30 If 0 is included in the filter, the material layering may include additional layers, as described above.

[0019] Figure 3B is a schematic cross-sectional view of the fourth exemplary elastic wave resonator 350. The instrument 350 is referred to herein as a "solid-mount membrane resonator." The film resonator is a thin film 360 of single-crystal piezoelectric material supported by a non-piezoelectric base 365. Characterized by a conductor pattern 355 including IDT formed on the surface, acoustic Bragg The reflector 370 is sandwiched between the film 360 and the base 365. Acoustic Bragg reflector The projectile 370 uses a first material with high acoustic impedance and a low acoustic impedance. It includes multiple layers that are alternately arranged with a second material having a film. The acoustic Bragg reflector 370 is a film It is configured to reflect and confine the sound waves generated along with 360. Dielectric layer 375 It can be deposited on top of the fingers of the conductor pattern 355, or deposited between the fingers. stomach.

[0020] The material lamination for the solid-mount membrane resonator 350 is based on 365, and the acoustic Bragg resonator is also used. Includes a nebulizer 370, a piezoelectric film 360, a conductor pattern 355, and a dielectric layer 375. Base 3 65 is specified by material and thickness. The acoustic Bragg reflector 370 is first and second It is defined by the material type, the number of layers, and the thickness of each layer. Piezoelectric film 360 is material type It is defined by the thickness tp and the orientation of the crystal axes of the piezoelectric material. Conductor pattern 355 is and is defined by its thickness and material. The dielectric layer 375 is defined by its thickness td1 and material. It is defined as follows: When incorporating multiple solid-mount film resonators into a filter device, the material volume As mentioned earlier, a layer can include additional layers.

[0021] Figure 4A is a schematic cross-sectional view of the fifth exemplary elastic wave resonator 400. Fifth elastic wave resonator Instrument 400 is a film bulk acoustic resonator (FBAR). Fifth elastic wave resonator 400 The upper conductor 420 and the lower conductor 420 A thin layer of single-crystal piezoelectric material sandwiched between the nductor)415 and each other. - Includes a film 405. This sandwich is supported by a non-piezoelectric base 410. It is made that the cavity 425 is a part of the sandwich 415 / 405 / 420. It is formed on the base 410 to form a diaphragm that spans across.

[0022] The material lamination for FBAR400 consists of a base 410, a lower conductive layer 415, a piezoelectric wafer or The base 410 includes a film 405 and an upper conductor layer 420. The base 410 is made of a material and has a thickness The lower conductor layer 415 is defined by its material type and thickness. C or piezoelectric film 405 depends on the material type, thickness, and orientation of the crystal axis of the piezoelectric material. The upper conductor layer 420 is defined by its thickness and material. Multiple FBAs When incorporating R400 into a filter, the material lamination may include an additional layer, as mentioned above. can.

[0023] Figure 4B is a schematic cross-sectional view of the sixth exemplary elastic wave resonator 450. In this specification, the instrument is referred to as a "Solid Mount Film Bulk Acoustic Resonator" (SM-FBAR). The sixth elastic wave resonator 450 consists of an upper conductor 470 and a lower conductor 46 Includes a thin wafer or film 455 of single-crystal piezoelectric material sandwiched between 5. This sandwich is supported by a non-piezoelectric base 460. Acoustic Bragg reflector 4 The 75 is sandwiched between the sandwich 470 / 455 / 465 and the base 460. The acoustic Bragg reflector 475 uses a first material with high acoustic impedance and low sound It includes multiple layers that alternate with a second material having acoustic impedance. Reflector 475 reflects the sound waves generated in sandwich 470 / 455 / 465, closing It is structured to convey a sense of depth.

[0024] The material lamination for SM-FBAR450 is base 460, acoustic Bragg reflector 475, bottom It includes a side conductor layer 465, a piezoelectric wafer or film 455, and an upper side conductor layer 470. S460 is specified by material and thickness. Acoustic Bragg reflector 475 is first and The second is defined by the material type, the number of layers, and the thickness of each layer. The lower conductor layer 465 is It is defined by the material type and thickness. The piezoelectric wafer or film 455 is a piezoelectric material. It is defined by the material type, thickness, and orientation of the crystal axis. The upper conductive layer 470 is It is defined by thickness and material. When incorporating multiple SM-FBAR450s into a filter... In addition, as mentioned above, the material lamination can include additional layers.

[0025] The acoustic resonators shown in Figures 2A to 4B are not part of a list that encompasses all types of acoustic resonators. No. Other types of acoustic resonators with other material layers may be used as filters. Furthermore, the cross-sectional views in Figures 2A to 4B do not necessarily show all layers within each material lamination. Not only that. For example, to promote adhesion between other layers, prevent chemical interactions between other layers. Additional layers may exist to achieve this, or to passivate and protect other layers.

[0026] Figure 5 is an illustrative schematic plan view of a conventional implementation of the bandpass filter 500. It has a schematic diagram similar to that of the endpass filter circuit 100. Filter 500 has six elastic The wave resonators X1 to X6 are all formed on a common chip 510. All of the X6's features include non-bonded SAW resonators, bonded wafer resonators, floating diaphragm resonators, and so Lid-mount membrane resonators, FBARs, SM-FBARs, or any other type of elastic wave resonator. They may also be resonators. Elastic wave resonators X1 to X6 are all typically of the same type. It is a resonator. To simplify the preparation of the diagram, all resonators X1 to X6 are the same in Figure 5. This is the case. However, this is almost certainly not true in the case of actual filters.

[0027] Elastic wave resonators X1 to X6 are connected by conductors such as the conductor 530 formed on the substrate 510. They are interconnected. Filter 500 is connected to the outside of the filter by pads such as pad 520. It is electrically connected to the system of the unit. Each pad is connected to, for example, a circuit board (not shown). To do this, solder or gold bumps may be used, or interface with them This is also good. Pads and bumps, in addition to establishing electrical connections, typically filter It is the primary means of removing heat from 500°C.

[0028] When forming multiple elastic wave resonators on the same chip, the manufacturing process and material lamination are multifaceted. This is essentially the same for all resonators. In particular, piezoelectric elements within material stacks (i.e.) The piezoelectric material plate, wafer, or film is the same for all resonators. However, the requirements for shunt resonators and series resonators are summarized in the table below. They are typically different. [Table 1]

[0029] A material lamination that is optimal for all resonators within the filter, or at least sufficient in terms of material volume. It can sometimes be impossible to select a specific layer.

[0030] Figure 6 is an exemplary schematic plan view of the segmented ladder filter 600, which is the same as the ladder in Figure 1A. It has the same schematic diagram as the filter circuit 100. In particular, the series resonators X1, X3, and X5 of the split ladder filter 600 are connected to the first chip 61 Manufactured on 0, the shunt resonators X2, X4, and X6 of the split ladder filter 600 are second It is manufactured on chip 640. Within each chip 610, 640, the elastic wave resonator is each These chips are interconnected by conductors such as conductor 630 formed on the chip. , 640 is connected to each other by pads such as pad 620, and also to the external system of the filter It is electrically connected to the . Each pad is for connecting to, for example, a circuit card (not shown). This may be solder or a gold bump, or it may be interfaced with them.

[0031] Between the series resonator on the first chip 610 and the shunt resonator on the second chip 640 Electrical connection 650 is shown as a thick dashed line. Connection 650 is, for example, the first chip and It is made from conductors on the circuit card to which the second chip is attached. In this context, The term "circuit card" refers to a system that connects the first and second chips to each other and provides bandpass filtering. This essentially refers to a planar structure that includes conductors for connecting to the external system of the TA600. Circuit cards are, for example, single-layer or multi-layer printed circuit boards, low-temperature co-fired ceramics (LTC). C) This can be a card, or any other type of circuit card. Because the resistance of the trace is very low, losses within the trace can be ignored. The inductance of the electrical connection 650 between the vibrator and the shunt resonator is the setting of the elastic wave resonator. This can be compensated for in the calculation. In some cases, the inductance of the electrical connection 650 By utilizing this, the performance of the filter can be improved, for example, by using one or more shunt resonances. By lowering the resonant frequency of the device, the filter bandwidth can be widened.

[0032] In the exemplary split ladder filter 600, all of the series resonators are located on the first chip. All shunt resonators are located on the second chip. However, in reality, this is not always the case. No. In some filters, the first chip is fewer in number than the total number of series resonators. It may not include, and / or the second tip may be fewer than the total number of components in the shunt resonator. It may only contain numbers.

[0033] Figure 7 is a schematic cross-sectional view of the segmented ladder filter 700, which is a segmented ladder filter It may be 600. The split ladder filter 700 consists of a first chip 710 and a second chip Including chip 740, both chips are mounted on circuit card 770, thereby interconnecting The process continues. In this example, the first chip 710 and the second chip 740 are connected to the circuit card 77. The 0 is implemented with a "flip chip". The first chip is 710 and the second chip is 740. The electrical connection between circuit card 770 and other components is made by soldering or by using gold bumps such as bump 720. The electrical connection between the first chip 710 and the second chip 740 is performed on the circuit card. The first tip 7 is formed by a conductor on or inside 770, for example, conductor 750. 10 and the second chip 740 are mounted on the circuit card 770 in some other way and / Alternatively, they may be connected.

[0034] The advantage of split ladder filters such as the 600 and 700 is that they are designed to avoid series resonance. The ability to use different material laminations for the instrument and shunt resonator. First material lamination This may be used in a first chip that includes part or all of a series resonator, and in a second material lamination. The first material may be used in a second tip that includes part or all of the shunt resonator. The lamination and the second lamination of materials may be different. This allows for the creation of a series resonator and a shunt. This allows for separate optimization of the first and second material layers for the resonator.

[0035] The two material layers are such that they are at least one embodiment of at least one element within the layer If they differ in certain aspects, they are considered to be different. Differences between material layers include, for example, the sequence of elements. , or different material types, thicknesses, or for at least one element in the stack Other parameters may be used. Generally, the first material lamination includes the first piezoelectric element. The second material lamination includes a second piezoelectric element. The second piezoelectric element is At least one of the material, thickness, and orientation of the crystal axis of the material is different from that of the first piezoelectric element. Yes.

[0036] The split ladder filter 600 / 700 incorporates a non-junction SAW resonator, as shown in Figure 2A. When incorporated, the first and second material layers have the following characteristics, namely, piezoelectric play. Material type, thickness, and orientation of crystal axes of T205, material and / or of conductor pattern 210 Even if one or more of the thickness h, the thickness td1 of the dielectric layer 215, and the material are different good.

[0037] The split ladder filter 600 / 700 assembles a bonded wafer resonator as shown in Figure 2B. When incorporating, the first and second material layers have the following characteristics, namely, base 23 Material and thickness of layer 0, number of lower dielectric layers 240 (if any), material and thickness td of each layer 2. Material type, thickness tp and crystal axis orientation of piezoelectric wafer 225, and conductor pattern 235 If one or more of the thickness h and material of the dielectric layer 245, and the thickness td1 and material of the dielectric layer 245 are different... It's okay to do that.

[0038] The split ladder filter 600 / 700 is a floating diaphragm resonator, as shown in Figure 3A. When incorporating this, the first and second material layers have the following characteristics, namely, base Material and thickness of 315, number of lower dielectric layers 320 (if any), material and thickness of each layer TD2, material type of piezoelectric wafer 310, thickness TP and crystal axis orientation, conductor pattern 3 One or more of the thickness h and material of 05, and the thickness td1 and material of the dielectric layer 325 are They can be different.

[0039] The split ladder filter 600 / 700 exhibits solid-mount film resonance, as shown in Figure 3B. When assembling the container, the first and second material layers have the following characteristics, namely, The material and thickness of S365, the number of layers in the acoustic Bragg reflector 370, the material and thickness of each layer, The material type, thickness tp, and crystal axis orientation of the piezoelectric wafer 360, and the conductor pattern 365. If one or more of the thickness h and material, and the thickness td1 and material of the dielectric layer 375 are different... It's fine if you do that.

[0040] When the split ladder filter 600 / 700 incorporates an FBAR as shown in Figure 4A, The first and second material layers have the following characteristics, namely, the base 410 material and Thickness, material and thickness of lower conductor 415, material type of piezoelectric wafer 405, thickness tp and Even if one or more of the crystal axis orientation, thickness of the upper conductor 420, and material are different, good.

[0041] The split ladder filter 600 / 700 incorporates an SM-FBAR as shown in Figure 4B. In summary, the first and second material layers have the following characteristics, namely, the base 460 material and thickness, number of layers in the acoustic Bragg reflector 475, material and thickness of each layer, lower conductor 465 The material and thickness of the piezoelectric wafer 455, the material type, thickness tp and crystal axis orientation, and The thickness and material of the upper conductor 470 may differ in one or more respects.

[0042] The difference between the first and second material stacks of the split ladder filter is not necessarily the same as the previous one. It is not identified by six paragraphs. The first material lamination and the second material lamination are as specified herein. In addition to, or instead of, the parameters identified by, one or more parameters are different It is acceptable to have one. The type of resonator is not limited to those shown in Figures 2A to 4B. Also, Column resonators and shunt resonators do not need to be the same type of resonator. [Examples]

[0043] (Example 1) The desired properties for filters used in portable devices are a wide temperature range. The stability of the passband is important. Technologies that achieve this objective, at least partially, involve thermal expansion. A thin wafer of piezoelectric material bonded to a base such as a silicon substrate, which has a low number and high thermal conductivity. The method involves using a bonded wafer resonator to manufacture a filter. Bonded wafer SA Compared to filters using non-junction SAW resonators, W filters offer a more efficient approach to handling a given power input. This results in a lower temperature rise and reduced sensitivity of the passband frequency to temperature.

[0044] The drawbacks of SAW resonators in bonded wafers are that they are located within the piezoelectric material, or within the silicon wafer or The existence of spurious acoustic modes that can propagate into other bases. A key element in designing bandfilters using bonded wafer resonators is spurious modes. The goal is to ensure that this occurs at frequencies outside the filter passband. Bonded wafer The cross-sectional structure and material lamination for the SAW resonator are similar to those of resonator 250 in Figure 2B.

[0045] Figure 8 shows the use of a lithium tantalate (LT) wafer bonded to a silicon base. In the graph of the size of S12 for two manufactured bonded wafer SAW filters, 800 Yes. S12 is the transmission between the first and second ports of the filter. (Dotted line) 810 is the S12 profile for filters manufactured on 42-degree Y-cut LT wafers. The dashed line 820 is for filters manufactured on a 46-degree Y-cut LT wafer. This is a plot of S12. The thick line 830 represents LTE (Registered Trademark) (Long Term E Requirements for Band 2 Transmit Filters (1850MHz~1910MHz) This specifies an insertion loss of less than 2 dB across the transmission bandwidth of z.

[0046] When the filter is manufactured on 42 degrees LT (dash-dotted line 810), the spurious mode is: These spurious signals occur at frequencies around the anti-resonance frequency of the series resonator within the filter. Depending on the mode, the filter passband is near the upper limit between 1902MHz and 1915MHz. S12 decreases (and correspondingly the insertion loss increases). The filter is 46 degrees LT (break When manufactured on line 820), spurious modes occur around the resonant frequency of the shunt resonator. These spurious modes occur at frequencies in the range of 1845MHz to 1855MHz. Between MHz, S12 decreases (and correspondingly, insertion loss increases). These factors All of these requirements include an insertion loss of less than 2 dB across the LTE Band 2 transmission bandwidth. It does not meet the requirements.

[0047] Figure 9 shows the split ladder LTE band 2 transmit filter manufactured on two chips. In graph 900, the size of S12 (curve 910), each is bonded to a silicon base. The wafer has lithium tantalate (LT). The first chip is manufactured on 46 degrees LT. The second chip includes a series resonator. The second chip is a shunt resonator manufactured on a 42-degree LT. Includes. The material lamination for the first chip and the second chip is at least LTW This varies depending on the orientation of the crystal axes of the Ehr, and may also vary in other ways.

[0048] By using a 46-degree LT in the series resonator, the spurious emissions that were clearly visible in curve 810 were eliminated. Mode-dependent losses at the upper end of the passband are avoided. A 42-degree LT is used for the shunt resonator. As a result, the spurious modes that were clearly visible at curve 820 at the lower end of the passband Losses are avoided. As shown in Figure 9, the split ladder filter is different from the conventional (that is, as shown in Figure 8) In contrast to the performance of any of the ladder filters (single-chip type), LTE Band 2 transmission The filter insertion loss requirement (bold line 930) is met.

[0049] (Example 2) In most elastic wave resonators, increasing the temperature causes both the resonant frequency and the anti-resonant frequency to change. It shifts to a lower frequency. Lowering the resonant frequency of the shunt resonator reduces the filter passband. The margin between the lower end and the lower end of the actual frequency band increases. Therefore, shunt resonance occurs. The effect of temperature on the device can be small. Conversely, if you lower the anti-resonance frequency of a series resonator... This reduces the margin between the upper end of the filter passband and the upper end of the actual frequency band. The effect may be accompanied by increased power dissipation in the series resonator. Thus, the junction wave Advantages of a resonator (low temperature coefficient of frequency, high thermal conductivity, and ability to suppress temperature rise) The series resonator is larger than the shunt resonator. The bonded wafer series resonator has A split ladder includes one chip and a second chip having a non-jointed SAW shunt resonator. The filter maintains the advantages of using bonded wafer series resonators while implementing the previous approach. This will be less expensive than Example 1.

[0050] (Example 3) Many of the frequency bands used by mobile communication devices are in the "Frequency Division Duplex" (FDD) band. This is the domain. In other words, it is the signal used for signals transmitted from and received by a device. Individual frequency ranges or bands are used. The duplexer receives the transmission frequency band. This is a filter subsystem for separating from frequency bands. Typically, it is a duplexer. It receives the transmission signal from the transmitter and sends the filtered transmission signal to the antenna. A transmission filter receives the received signal from the antenna and then receives the filtered received signal. Includes a receiving filter that is sent to the device.

[0051] The duplexer uses the same material lamination for both the transmit and receive filters. It may be implemented as two filters on a common chip. Alternatively, duplexer 1 000 represents the transmit filter and receive filter on separate chips, as shown in Figure 10A. It may be implemented using the following: The first chip 1010 includes a transmit filter, and the second chip The 1020 includes a receiving filter. The pads on chips 1010 and 1020 are as described above. It connects to the circuit card. The pad labeled "Tx" is the input from the transmitter. The pad labeled "Rx" is the output to the receiver. The pad labeled "A" The pads are connected to the antenna. The pads labeled "G" are connected to the ground. To be continued. Figure 10A is a concept of a two-chip duplexer, not a specific duplexer design. To facilitate preparation, the transmit filter on the first chip 1010 is shown in Figure 5. It is the same as the filter, and the receiving filter on the second chip 1020 is the same as the filter in Figure 5. It is a mirror image.

[0052] Implementing a duplexer with transmit and receive filters on different chips. This allows for different material stacking configurations for the two filters. Two-chip mounting is possible. Suitable for frequency division duplex bandwidths where the transmit and receive frequency bands are widely separated. For example, LTE Band 4 has a transmission band (1710MHz~1755MHz) and a reception band. There is a 400MHz gap between the frequency bands (2110MHz~2155MHz). Different chips Implement an LTE Band 4 duplexer with a transmit filter and a receive filter on top of it. This allows the material stacking of the two filters to be optimized for their respective frequency ranges. Cut.

[0053] Figure 10B shows the split ladder duplexer 1050, which includes a transmit filter and a receive filter. These are illustrative schematic plan views, each of which is the same as the bandpass filter circuit 100 in Figure 1. The schematic diagram is shown. The transmitting filter consists of series resonators XT1, XT3, and XT5, and a shan The receiver includes the resonators XT2, XT4, and XT6. The receiver filter has the series resonators XR1, X This includes R3 and XR5, and shunt resonators XR2, XR4, and XR6. (See Figure 10A) In contrast to the 2-chip duplexer 1000 shown, both the transmit filter and the receive filter... The series resonators XT1, XT3, XT5, XR1, XR3, and XR5 are the first chip 106 Manufactured on 0. Shunt resonators XT2 and XT for both the transmit and receive filters. 4. XT6, XR2, XR4, and XR6 are manufactured on the second chip 1070. 1060 and 1070 are connected to each other by pads, and as the aforementioned circuit cards, and It is electrically connected to an external system of the filter. Each pad is connected to, for example, a circuit card (Figure). (Not shown) For connection above, solder or gold bump may be used, or it may be used in You may also use a series resonator on the first chip 1060 and the second chip 1070. The electrical connection 650 between the upper shunt resonator and the other components is shown as a thick dashed line. Connection 650 For example, a circuit car on which the first chip 1060 and the second chip 1070 are mounted. It is made from a conductor on a certain surface.

[0054] The transmit filter is, for example, the LTE Band 2 transmit filter described in relation to Figures 8 and 9. A ladder filter may also be used. The receiving filter is for 1930MHz~1990MHz. It may be similar to a split ladder filter with a passband of [value].

[0055] (Example 4) Figure 11 shows another split ladder duplexer 1100 including transmit and receive filters. These are illustrative schematic plan views, each of which is a bandpass filter circuit 100 of Figure 1 and They have the same schematic diagram. The transmitting filter consists of series resonators XT1, XT3, and XT5, and a shutter The receiver includes the series resonators XT2, XT4, and XT6. The receiver filter includes the series resonator XR1. Includes XR3 and XR5, and shunt resonators XR2, XR4, and XR6. Transmitter Luta's series resonators XT1, XT3, and XT5 are manufactured on the first chip 1060. Shunt resonators XT2, XT4, XT6 of the signal filter and resonator XR1 of the receiver filter, The XR2, XR3, XR4, XR5, and XR6 are all manufactured on the second chip, the 1070. The chips 1060 and 1070 are connected to each other by pads, and as with the aforementioned circuit board. It is electrically connected to the filter and to an external system.

[0056] The series resonators XT1, XT3, and XT5 of the transmit filter on the first chip 1160 are second Compared to the resonator on chip 1120, it has high power dissipation. Therefore, the first chip The top may have a material lamination that provides efficient heat removal from the resonator. Luta's series resonators XT1, XT3, and XT5 can be used, for example, as bonded wafer resonators or solid A mounted film resonator may also be used. A second chip where heat dissipation is not so critical may be different. It can be manufactured using different types of resonators. The second resonator on the chip is, for example, non A junctioned SAW resonator may also be used.

[0057] (Explanation of method) Figure 12 is a flowchart of method 1200 for manufacturing a segmented ladder filter device. The segmented ladder filter device is the segmented ladder filter device 600, 700, or 1050. It is also acceptable. Method 1200 starts at 1210 and ends with a completed filter device at 1290. I'm done.

[0058] In step 1220, the first chip is manufactured using the first material stack. This includes one, part, or all of the series resonators of the filter device. The first chip is During each iteration of step 1220, multiple copies of the first chip are generated. It may be part of the first large multi-chip wafer. In this case, at 1220 As part of the process, individual chips can be cut from the wafer and tested. .

[0059] In 1230, the second chip uses a second material layer that is different from the first material layer. The second chip is one, part of, or part of the shunt resonator of the filter device. This includes everything. The second chip is the second chip during each iteration of step 1230. Part of a second large multi-chip wafer so that multiple copies are generated. Alternatively, as part of the action in 1230, the individual chips can be removed from the wafer. It can be cut out and tested.

[0060] 1240 is used to manufacture circuit cards. Circuit cards are, for example, printed circuit boards or L It may be a TCC card or some other form of circuit card. The circuit card is Between the series resonator on one chip and the shunt resonator on the second chip, at least one The circuit may include one or more conductors to form an electrical connection. Between each of the 240 iterations, multiple copies of the circuit card are generated, using a large board. It may be a part of the action in 1240, or the individual circuit The card can be cut from the circuit board and tested. Alternatively, at 1250, the chip After the circuit board is attached, or in 1260, the device is packaged. Afterward, individual circuit cards can be cut out from the circuit board.

[0061] In 1250, individual first and second chips are circuit-driven using a known process. It is assembled into a board (which may or may not be part of a larger circuit board). For example, The first and second chips are attached to the circuit card using solder, gold bumps, or balls, and then flipped into place. The "chip" is implemented to establish electrical, mechanical, and thermal connections between the chip and the circuit card. This is possible. The first and second chips can be assembled into a circuit card in some other way. can.

[0062] The filter device is completed in step 1260. Steps to complete the filter device in step 1260 This includes packaging and testing. The steps to complete the filter device in 1260 include Before or after packaging, individual circuit cards / chip assemblies are separated from the larger board. This may include cutting out the "ri" part.

[0063] Throughout this description, the embodiments and examples shown are those of the disclosed or claimed apparatus and The examples presented herein should be considered as illustrations, not limitations on procedures. Many of these involve specific combinations of method actions or system elements, but these actions and These elements can be combined in other ways to achieve the same purpose. I want you to understand. Regarding flowcharts, even if there are additional steps, the number of steps is good. The steps shown may be at least a combination of steps to achieve the method described herein. They may be combined or further refined. This is discussed in relation to one embodiment only. The actions, elements, and features described herein are intended to be excluded from similar roles in other embodiments. It will not be done.

[0064] As used herein, “plural” means two or more. In this case, a "set" of items can contain one or more of those items. When used herein, either the description or the claims described herein may not apply. The terms "comprising", "including", and "carrying" "carrying", "having", "contain" "ing" and "involving" imply the absence of constraints, that is, including However, this should be understood as meaning that it is not limited to these. "consisting of)" and "substantially consisting of" Only the transitional phrases "(sentially of)" are definite or semi-definite transitional phrases, respectively. The following terms shall apply to modifying the claim elements: "first," "second," and "third" in the claim. The use of ordinal numbers such as these indicates, in itself, priority of one claim element over another. It implies rank, priority, or order, or the temporal order in which the actions of a method are performed. Rather, to distinguish the claim elements, one claim element having a certain name, ( However, labels (for use with ordinal numbers) to distinguish from other elements that have the same name. As used herein, "and / or" is merely used as an enumerator. This means that the item is a substitute, but the substitute is any pair of the enumerated items. This includes combinations.

Claims

1. A first chip having a first material layer, comprising one or more ladder filter circuits in series The first chip includes a resonator, A second chip having a second material layer, comprising one or more of the ladder filter circuits. The second tip includes a shunt resonator, A filter device comprising, A filter device that is different from the first material lamination and the second material lamination.

2. The first chip includes all of the series resonators of the ladder filter circuit, The second chip includes all of the shunt resonators of the ladder filter circuit. The filter device according to claim 1.

3. The first chip and the second chip are one of the one or more series resonators Electrical A circuit card that includes at least one conductor for forming a connection, The filter device described in item 1.

4. The first material lamination includes a first piezoelectric element. The second material lamination includes a second piezoelectric element. The first piezoelectric element and the second piezoelectric element are made of a material, have a thickness, and have a crystal axis of the material. At least one of the orientations is different, The filter device according to claim 1.

5. The one or more series resonators and the one or more shunt resonators are non-jointed SAW (surface It is an elastic wave resonator, The first material lamination and the second material lamination are, Materials for piezoelectric plates, The thickness of the piezoelectric plate and The orientation of the crystal axis of the piezoelectric plate, The material of the conductive pattern formed on the piezoelectric plate, The thickness of the aforementioned conductor pattern and The material of the dielectric layer formed on the conductor pattern, The thickness of the dielectric layer and, A filter device according to claim 1, wherein one or more of the following are different.

6. The one or more series resonators and the one or more shunt resonators are bonded wafer resonators. And, The first material lamination and the second material lamination are, The base materials, The thickness of the aforementioned base and, The material of the dielectric layer between the base and the piezoelectric wafer, The thickness of the dielectric layer between the base and the piezoelectric wafer, The material of the piezoelectric wafer, The thickness of the piezoelectric wafer and The orientation of the crystal axis of the piezoelectric wafer, The material of the conductive pattern formed on the piezoelectric wafer, The thickness of the aforementioned conductor pattern and The material of the dielectric layer formed on the aforementioned conductor pattern, The thickness of the dielectric layer formed on the conductor pattern, A filter device according to claim 1, wherein one or more of the following are different.

7. The one or more series resonators and the one or more shunt resonators are, together with the floating diaphragm It is a vibrator, The first material lamination and the second material lamination are, The base materials, The thickness of the aforementioned base and, The material of the dielectric layer between the base and the piezoelectric wafer, The thickness of the dielectric layer between the base and the piezoelectric element, The material of the piezoelectric wafer, The thickness of the piezoelectric wafer and The orientation of the crystal axis of the piezoelectric wafer, The material of the conductive pattern formed on the piezoelectric wafer, The thickness of the aforementioned conductor pattern and The material of the dielectric layer formed on the aforementioned conductor pattern, The material of the dielectric layer formed on the conductor pattern, A filter device according to claim 1, wherein one or more of the following are different.

8. The one or more series resonators and the one or more shunt resonators are solid-mounted. It is an ear phragm resonator, The first material lamination and the second material lamination are, The base materials, The thickness of the aforementioned base and, The number of layers in the acoustic Bragg reflector placed between the base and the piezoelectric wafer, and each layer The material and thickness, The thickness of the dielectric layer between the base and the piezoelectric element, The material of the piezoelectric wafer, The thickness of the piezoelectric wafer and The orientation of the crystal axis of the piezoelectric wafer, The material of the conductive pattern formed on the piezoelectric wafer, The thickness of the aforementioned conductor pattern and The material of the dielectric layer formed on the aforementioned conductor pattern, The thickness of the dielectric layer formed on the conductor pattern, A filter device according to claim 1, wherein one or more of the following are different.

9. The one or more series resonators and the one or more shunt resonators are film bulk acoustics It is a resonator, The first material lamination and the second material lamination are, The base materials, The thickness of the aforementioned base and, The material of the lower conductor pattern disposed between the base and the piezoelectric element, The thickness of the lower conductor pattern and The material of the piezoelectric element, The thickness of the piezoelectric element and The orientation of the crystal axis of the piezoelectric element, The material of the upper conductor pattern formed on the piezoelectric element, The thickness of the upper conductor pattern and The material of the dielectric layer formed on the upper conductor pattern, The thickness of the dielectric layer and, A filter device according to claim 1, wherein one or more of the following are different.

10. The one or more series resonators and the one or more shunt resonators are solid-mounted It is a Wilmbulk acoustic resonator, The first material lamination and the second material lamination are, The base materials, The thickness of the aforementioned base and, The number of layers of acoustic Bragg reflectors placed between the base and the lower conductor pattern, and each layer The material and thickness, The material of the lower conductor pattern disposed between the acoustic Bragg reflector and the piezoelectric element 、 The thickness of the lower conductor pattern and The material of the piezoelectric element, The thickness of the piezoelectric element and The orientation of the crystal axis of the piezoelectric element, The material of the upper conductor pattern formed on the piezoelectric element, The thickness of the upper conductor pattern and The material of the dielectric layer formed on the upper conductor pattern, The thickness of the dielectric layer and, A filter device according to claim 1, wherein one or more of the following are different.

11. The one or more series resonators and the one or more shunt resonators are bonded wafer resonators. And, The first material layer includes a 46-degree Y-cut lithium tantalate piezoelectric wafer. The second material layer includes a 42-degree Y-cut lithium tantalate piezoelectric wafer. The filter device according to claim 1.

12. The one or more series resonators are bonded wafer resonators, The one or more shunt resonators are non-junction SAW resonators. The filter device according to claim 1.

13. A duplexer including a transmit ladder filter circuit and a receive ladder filter circuit, A first chip having a first material layer, wherein one of the transmitting ladder filter circuits The first chip includes the series resonator shown above, A second chip having a second material layer, wherein one of the receiving ladder filter circuits The second tip includes the upper shunt resonator, Equipped with, A duplexer that is different from the first material lamination and the second material lamination.

14. The first chip comprises both the transmit ladder filter circuit and the receive ladder filter circuit. It includes a series resonator of the same type, The second chip comprises both the transmit ladder filter circuit and the receive ladder filter circuit. Including a shunt resonator, The duplexer according to claim 13.

15. The first chip is the transmit ladder filter circuit and the receive ladder filter circuit. Including all of the aforementioned series resonators, The second chip is the transmit ladder filter circuit and the receive ladder filter circuit. Including all of the aforementioned shunt resonators, The duplexer according to claim 14.

16. The first chip includes a series resonator of the transmit ladder filter circuit, The second chip is the shunt resonator of the transmitting ladder filter circuit and the receiving ladder - Including all resonators in the filter circuit, The duplexer according to claim 13.

17. The series resonator of the aforementioned transmitting ladder filter circuit is a bonded wafer resonator, All of the shunt resonator of the transmitting ladder filter circuit and the receiving filter circuit The duplexer according to claim 16, wherein the resonator is a non-junction SAW resonator.

18. A method for manufacturing a filter device, A step of manufacturing a first chip having a first material layer, wherein the first chip Steps include a ladder filter circuit with one or more series resonators, A step of manufacturing a second chip having a second material layer, wherein the second chip The step includes one or more shunt resonators in the ladder filter circuit, Includes, A method for manufacturing a filter device, which differs from the first material lamination and the second material lamination described above.

19. The first chip includes all of the series resonators of the ladder filter circuit, The second chip includes all of the shunt resonators of the ladder filter circuit. A method for manufacturing a filter device according to claim 18.

20. The first chip and the second chip are connected to one of the one or more series resonators. Electrical Steps to mount a circuit card containing at least one conductor for forming a target connection. A method for manufacturing a filter device according to claim 18, further comprising:

21. The first material lamination includes a first piezoelectric element. The second material lamination includes a second piezoelectric element. The first piezoelectric element and the second piezoelectric element are made of a material, have a thickness, and have a crystal axis of the material. A method for manufacturing a filter device according to claim 18, wherein at least one of the orientations is different.

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