Plasma processing system and exhaust system

Abstract

This disclosure provides a plasma processing system equipped with a filter device capable of removing particles from a gas without using liquid. [Solution] The plasma processing system according to this disclosure comprises a plasma generator configured to perform plasma processing and oxidation processing on a process gas to form a powder, and a trap device for removing powder from a gas containing the powder. The trap device comprises a chamber, an inlet pipe configured to fluidly communicate the plasma generator and the chamber, the inlet pipe having an inlet opening located inside or on the surface of the chamber, and an outlet pipe for exhausting the gas inside the chamber to the outside of the chamber, the outlet pipe having an outlet opening located inside or on the surface of the chamber. The chamber does not contain any liquid and is in a dry state, and the orientation of the inlet opening and the orientation of the outlet opening are not arranged to face each other.

Description

[Technical Field]

[0001] This invention relates to a plasma processing system and an exhaust system. [Background technology]

[0002] Plasma treatment systems are used to detoxify exhaust gases emitted from semiconductor processing equipment. One example of such a plasma treatment system is the semiconductor exhaust gas detoxification system described in Patent Document 1.

[0003] The semiconductor exhaust gas abatement system 10 described in Patent Document 1, as shown in Figure 1, comprises a vacuum pump 18 for evacuating the semiconductor chamber, an abatement device 12, and a filter device 16. The abatement device 12 is configured to abate the exhaust gas flowing from the semiconductor processing chamber 14 and supply the abated exhaust gas to the filter device 16. The filter device 16 is configured to remove particles generated during the abatement of the exhaust gas from the exhaust gas. More specifically, the filter device 16 has a filter chamber 118, as shown in Figure 6 of Patent Document 1. The filter chamber 118 forms a liquid reservoir 120 for holding a filter liquid that filters particles from the process gas flowing into the filter device 16. As a result, when the exhaust gas supplied from the abatement device 12 flows through the filter chamber 118, the particles contained in the exhaust gas are separated from the gas flow and adsorbed by the filter liquid. [Prior art documents] [Patent Documents]

[0004] [Patent Document 1] Special Publication 2023-542946 [Patent Document 2] Japanese Patent Publication No. 2023-59416 [Overview of the Initiative] [Problems that the invention aims to solve]

[0005] Incidentally, the filter device 16 disclosed in Patent Document 1 is intended to be used under extremely low pressure created by a vacuum pump 18. For this reason, the filter device 16 requires the use of a filter liquid with a low vapor pressure. If a filter liquid with a high vapor pressure were used, the filter liquid would vaporize, increasing the pressure in the vacuum. However, filter liquids with low vapor pressure are expensive, which increases the running costs of the device.

[0006] Furthermore, to allow the filter liquid to be used for a relatively long period, the filter liquid can be conserved by circulating it through the system while being filtered by a filter. However, in such cases, a filter and liquid circulation equipment are required. As a result, the cost of the equipment increases, and the overall footprint of the system may also increase due to the placement of the filter and liquid circulation equipment. Therefore, there is a need for a filter system that can remove particles from gas without using liquid.

[0007] Therefore, one of the objectives of this disclosure is to provide a plasma processing system and an exhaust system equipped with a filter device that can remove particles from a gas without using liquid. [Means for solving the problem]

[0008] The plasma processing system described herein is in fluid communication with a semiconductor chamber of a semiconductor manufacturing apparatus and performs plasma processing and oxidation processing on a process gas supplied from the semiconductor chamber. The device comprises a plasma generator configured to form powder, and a trap device that is in fluid communication with the plasma generator and removes the powder from a gas containing the powder, wherein the trap device comprises a chamber, an inlet pipe configured to fluidly communicate the plasma generator and the chamber, the inlet pipe having an inlet opening located inside or on the surface of the chamber, and an outlet pipe for exhausting the gas inside the chamber to the outside of the chamber, the outlet pipe having an outlet opening located inside or on the surface of the chamber, wherein the chamber does not contain liquid and is in a dry state, and the orientation of the inlet opening and the orientation of the outlet opening are not arranged to face each other.

[0009] The exhaust system according to this disclosure comprises the plasma processing system described above, the semiconductor manufacturing apparatus having the semiconductor chamber, a vacuum pump for evacuating the semiconductor chamber via the plasma generator and the trapping device, and a detoxification device for receiving the gas exhausted from the vacuum pump and rendering the received gas harmless.

[0010] The plasma processing system according to this disclosure comprises a plasma generator configured to fluidly communicate with a semiconductor chamber of a semiconductor processing apparatus or semiconductor manufacturing apparatus, and to perform plasma processing and oxidation processing on a process gas supplied from the semiconductor chamber to pulverize it and form a powder; and a trap device configured to fluidly communicate with the plasma generator and to remove the powder from the gas containing the powder, wherein the trap device comprises a chamber, an inlet pipe configured to fluidly communicate the plasma generator and the chamber, having an inlet opening located inside or on the surface of the chamber, an outlet pipe for exhausting the gas in the chamber to the outside of the chamber, having an outlet opening located inside or on the surface of the chamber, and a shield located between the inlet opening and the outlet opening, wherein the chamber does not contain any liquid and is in a dry state. [Brief explanation of the drawing]

[0011] [Figure 1] It is a block diagram of an exhaust system according to an embodiment of the present disclosure. [Figure 2] It is a structural diagram showing the configuration of the plasma generator shown in FIG. 1. [Figure 3A] It is a structural diagram showing the configuration of the trap device shown in FIG. 1. [Figure 3B] It is a cross-sectional view of the trap device shown in FIG. 3A. [Figure 4A] It is a cross-sectional view showing an example in which the direction of the inlet opening and the direction of the outlet opening are arranged to face each other. [Figure 4B] It is a cross-sectional view showing an example in which the direction of the inlet opening and the direction of the outlet opening are arranged to face each other. [Figure 5A] It is a structural diagram showing the configuration of a trap device different from the trap device of FIG. 3A. [Figure 5B] It is a cross-sectional view of the trap device shown in FIG. 5A. [Figure 6A] It is a structural diagram showing the configuration of a trap device different from the trap device of FIG. 3A. [Figure 6B] It is a plan view of the trap device shown in FIG. 6A. [Figure 6C] It is a cross-sectional view of the trap device shown in FIG. 6A. [Figure 7] It is a cross-sectional view showing the configuration of a trap device different from the trap device of FIG. 3A. [Figure 8] It is a perspective view of a plasma processing system according to another embodiment of the present disclosure. [Figure 9] It is a block diagram of a plasma processing system according to another embodiment of the present disclosure. [Figure 10] It is a block diagram of an exhaust system according to another embodiment of the present disclosure. [Figure 11] It is a block diagram of an exhaust system according to another embodiment of the present disclosure.

Mode for Carrying Out the Invention

[0012] Embodiments of the present invention will be described below with reference to the drawings. In the drawings described below, the same or corresponding components are denoted by the same reference numerals, and redundant descriptions are omitted.

[0013] ≪Exhaust System 100≫ Figure 1 is a block diagram of an exhaust system 100 according to an embodiment of the present disclosure. Referring to Figure 1, the exhaust system 100 includes, as an example, a plasma processing system 200, a semiconductor manufacturing apparatus 110, a vacuum pump 120, and a filtration device 130. First, the components of the exhaust system 100 will be described.

[0014] ≪Semiconductor Manufacturing Equipment 110≫ The semiconductor manufacturing apparatus 110 includes, for example, a semiconductor chamber 112 and a valve 114. The semiconductor manufacturing apparatus 110 is, for example, an apparatus for supplying process gas to a substrate placed in the semiconductor chamber 112 and performing a film deposition process on the substrate. The semiconductor chamber 112 is connected to the plasma generator 300 of the plasma processing system 200. Therefore, the process gas used in the film deposition process is exhausted to the plasma generator 300. The valve 114 has the function of adjusting the flow rate of the process gas exhausted from the semiconductor chamber 112. In this specification, a semiconductor manufacturing apparatus refers to an apparatus that performs some kind of processing on a substrate during semiconductor manufacturing. For example, a semiconductor manufacturing apparatus may include a chemical vapor deposition (CVD) apparatus or an atomic layer deposition (ALD) apparatus. Furthermore, a semiconductor manufacturing apparatus may, for example, be an apparatus for manufacturing flat panel displays (FPDs) or solar cells.

[0015] ≪Vacuum Pump 120≫ The vacuum pump 120 is in fluid communication with the semiconductor chamber 112 via the plasma generator 300 and trap device 500 of the plasma processing system 200. The vacuum pump 120 is used to draw in process gas from inside the semiconductor chamber 112 and create a vacuum inside the semiconductor chamber 112. The vacuum pump 120 is configured, for example, to maintain a pressure at the intake port from 10 Pa to 1333 Pa during intake. The vacuum pump 120 is also connected to an abatement device 130. As a result, the gas drawn in by the vacuum pump 120 from inside the semiconductor chamber 112 flows to the abatement device 130.

[0016] ≪Abatement device 130≫ The abatement device 130 has the function of detoxifying process gases by known methods. Process gases used in semiconductor manufacturing may contain harmful flammable gases such as silane gas (SiH4), dichlorosilane gas (SiH2Cl2), and ammonia (NH3). Furthermore, when harmful flammable liquid sources are used that are liquid at room temperature, such as tetraethyl orosilicate (Si(OC2H5)4), and are vaporized or atomized for use, the process gas may contain halogen-based persistent gases such as HF, F2, Cl2, NF3, ClF3, SF6, CHF3, C2F6, CF4, and / or gases such as H2, O2, O3, and noble gases. For this reason, the process gas exhausted by the vacuum pump 120 cannot be released directly into the atmosphere and is detoxified by the abatement device 130. The detoxified process gas is then released into the atmosphere through exhaust equipment, including exhaust piping.

[0017] ≪Plasma Treatment System 200≫ Depending on the specifications of the semiconductor manufacturing equipment 110, the process gas may contain metallic components such as Zr, Hf, Ti, La, Mo, Ru, and Co. When these metallic components react with an oxidation source, metal oxide powder is formed. If this powder gets stuck in the gaps between the rotors of the vacuum pump 120, or in the gaps between the rotors and the casing housing the rotors, it may hinder the normal rotation of the vacuum pump 120. Therefore, the exhaust system 100 includes a plasma treatment system 200 between the semiconductor chamber 112 and the vacuum pump 120 that has the function of removing metallic components from the process gas in order to protect the vacuum pump 120. The detailed configuration of the M processing system 200 will be described below.

[0018] As an example, the plasma processing system 200 includes a plasma generator 300, a trap device 500, a gas supply device 400, and a control device 220, as shown in Figure 1.

[0019] <Gas supply device 400> The gas supply device 400 is connected to a noble gas supply source 932, a nitrogen gas supply source 934, and an oxidizing gas supply source 936. The nitrogen gas supply source 934 is configured to supply nitrogen gas to the gas supply device 400. The noble gas supply source 932 is configured to supply noble gas to the gas supply device 400. The oxidizing gas supply source 936 is configured to supply noble gas to the gas supply device 400. Note that the oxidizing gas can be any gas that can supply oxygen for the oxidation reaction, such as O2, O3, N2O, H2O2, or ClO. x NO xThe noble gas, nitrogen gas, and oxidizing gas may be H2O, H2+O2, halogen gas+O2, or any combination thereof. This supplies the noble gas, nitrogen gas, and oxidizing gas to the gas supply device 400. The gas supply device 400 is also connected to the plasma generator 300. The gas supply device 400 is configured to supply the noble gas, nitrogen gas, and oxidizing gas to the plasma generator 300 at appropriate flow rates. More specifically, the gas supply device 400 includes a first flow control device 410 for adjusting the flow rate of the noble gas, a second flow control device 420 for adjusting the flow rate of the nitrogen gas, and a third flow control device 430 for adjusting the flow rate of the oxidizing gas. The first flow control device 410, the second flow control device 420, and the third flow control device 430 are, for example, mass flow controllers.

[0020] <Plasma Generator 300> Next, refer to Figure 2. Figure 2 is a structural diagram showing the configuration of the plasma generator 300 shown in Figure 1. Referring to Figure 2, the plasma generator 300 comprises a ceramic tube 302, a coil 304 wound around the outer circumference of the ceramic tube 302, and a power supply 306. In the plasma generator 300, when noble gas, nitrogen gas, and oxidizing gas are supplied to the plasma generator 300, the power supply 306 applies a current of a predetermined frequency to the coil 304, generating strong electromagnetic waves inside the ceramic tube 302 and creating plasma 312. The coil 304 is made of copper (Cu) as an example. The ceramic tube 302 is made of one of the following materials as an example: aluminum nitride (AlN), alumina (Al2O3), zirconium oxide (ZrO2), hafnium oxide (HfO2), yttria (Y2O3), or quartz (SiO2). In another embodiment of this disclosure, the ceramic tube 302 may be made by spraying the above-mentioned ceramic onto a high-temperature corrosion-resistant austenitic metal surface such as stainless steel, Hastelloy, or Inconel. Also, in another embodiment of this disclosure, the plasma generator 300 may generate the plasma 312 by other known methods.

[0021] As shown in Figure 1, the plasma generator 300 is in fluid communication with the semiconductor chamber 112. Therefore, process gas is supplied to the plasma generator 300 from the semiconductor chamber 112. The process gas may contain metallic components. The plasma generator 300 performs plasma treatment and oxidation treatment on the process gas, thereby removing metal oxides (Me) in powder form from the metallic components contained in the process gas. x O y ) R (Me indicates metal, Me x O y This term is used as a general term for metal oxides. R indicates a state in which electrons, etc., are added to the metal oxide by plasma treatment. This forms a ) ). In other words, the plasma generator 300 has the function of oxidizing and pulverizing metal components.

[0022] Furthermore, the plasma generator 300 has the function of detoxifying process gases. For example, in the semiconductor manufacturing apparatus 110, trisdimethylaminocyclopentadienylzirconium (Zr[(C5H5)(N(CH3)2)]3) (hereinafter referred to as "ZAC") is used as a preservative. When (ZAC) is used, (CH3)2NH is produced as a byproduct from ZAC during semiconductor manufacturing in the semiconductor chamber 112. (CH3)2NH is known to be explosive. The plasma generator 300 performs plasma treatment and oxidation treatment on (CH3)2NH, causing the following chemical reaction to occur. As a result, (CH3)2NH is completely oxidized, loses its explosiveness, and becomes harmless. 2(CH3)2NH+22O2→4CO2+14H2O+N2 Therefore, the plasma generator 300 has the function of neutralizing process gases that are explosive, flammable, toxic, or otherwise harmful through oxidation reactions.

[0023] Furthermore, depending on the specifications of the semiconductor manufacturing equipment 110, the flow rate of the process gas supplied to the plasma generator 300 may not be stable. As a result, the flow rate of the process gas supplied to the plasma generator 300 may fluctuate. When the flow rate of the process gas fluctuates, the internal pressure of the plasma generator 300 fluctuates, and the plasma generator 300 may not be able to generate a stable plasma 312.

[0024] In contrast, the plasma processing system 200 is equipped with a pressure gauge 222 for measuring the internal pressure of the plasma generator 300 (see Figure 1). As described above, the gas supply device 400 includes a first flow control device 410 for adjusting the flow rate of noble gas, a second flow control device 420 for adjusting the flow rate of nitrogen gas, and a third flow control device 430 for adjusting the flow rate of oxidizing gas. The control device 220 is configured to control the first flow control device 410, the second flow control device 420, and the third flow control device 430 according to the pressure measured by the pressure gauge 222. As a result, even if the flow rate of the process gas supplied to the plasma generator 300 fluctuates, the control device 220 can change the flow rates of the noble gas, oxidizing gas, and nitrogen gas in accordance with the pressure fluctuations, thereby enabling the plasma generator 300 to generate a stable plasma.

[0025] Referring to Figure 3, the plasma generator 300 further includes an ammeter 308 for measuring the current flowing through the coil 304 and a control device 310. The control device 310 is configured to perform at least one of the following first and second processes when the maximum value of the current measured by the ammeter 308 while the power supply 306 is applying current to the coil 304 is greater than a predetermined value. In the first process, the control device 310 increases the current applied by the power supply 306 to the coil 304. In the second process, the control device 310 increases the frequency of the current applied to the coil 304.

[0026] When plasma 312 is being generated in the plasma generator 300, power is used to generate the plasma 312, and the current flowing through the coil 304 decreases compared to when plasma 312 is not being generated. Therefore, if the maximum value of the current measured by the ammeter 308 is greater than a predetermined value, it can be inferred that plasma 312 is not being generated.

[0027] On the other hand, it is known that plasma 312 is more likely to be generated when the current applied to coil 304 increases or when the frequency of the current applied to coil 304 increases. For this reason, when the control device 310 estimates that plasma 312 has not been generated, it attempts to reignite the plasma 312 under conditions that are more likely to generate plasma 312. In other words, the plasma generator 300 has a plasma 312 reignition function.

[0028] <Trap device 500> Figure 3A is a structural diagram showing the configuration of the trap device 500 shown in Figure 1. Figure 3B is a cross-sectional view of the trap device 500. The trap device 500 is in fluid communication with the plasma generator 300 and has the function of removing powder from the powder-containing gas supplied from the plasma generator 300 (see Figure 1). More specifically, the trap device 500, as an example, The chamber 510 comprises an inlet pipe 520 and an outlet pipe 530. The chamber 510, for example, has a rectangular parallelepiped shape and has a top surface 512, a bottom surface 513, and four side surfaces 514, 515, 516, and 517 connecting the top surface 512 and the bottom surface 513. The top surface 512, the bottom surface 513, and the side surfaces 514, 515, 516, and 517 are thin rectangular plates. The top surface 512, the bottom surface 513, and the side surfaces 514, 515, 516, and 517 are the surfaces of the chamber 510. The chamber 510 does not contain any liquid and is in a dry state. The chamber 510 may also have the shape of a sphere, cylinder, or the like.

[0029] The inlet pipe 520 is configured to provide fluid communication between the plasma generator 300 and the chamber 510. The inlet pipe 520 has an inlet opening 522 located on the top surface 512. In other words, the inlet opening 522 faces the bottom surface 513. In this disclosure, "orientation of the pipe opening" means the direction from inside the pipe through the opening to the outside of the pipe.

[0030] On the other hand, the outlet pipe 530 is configured to exhaust the gas inside the chamber 510 to the vacuum pump 120, which is outside the chamber 510. More specifically, the outlet pipe 530 penetrates the bottom surface 513, bends in an L-shape at a bend 532 located inside the chamber 510, and extends from the bend 532 toward the side surface 514. The outlet pipe 530 has an outlet opening 534 located inside the chamber 510. The outlet opening 534 does not face upwards, but faces toward the side surface 514. In other words, in the trap device 500, the orientation of the inlet opening 522 and the orientation of the outlet opening 534 are not arranged to face each other. The body of the outlet pipe 530 is located between the inlet opening 522 and the outlet opening 534, and the body of the outlet pipe 530 acts as a shield 502. In other words, there is always an obstruction 502 on the straight line connecting the inlet opening 522 and the outlet opening 534, and it is impossible to draw a straight line connecting the inlet opening 522 and the outlet opening 534 without passing through the obstruction 502.

[0031] In this disclosure, the phrase "an arrangement in which the orientation of the inlet opening and the orientation of the outlet opening are facing each other" means not only the arrangement in which the outlet opening 952 is located in front of the inlet opening 950, as shown in Figure 4A, but also the arrangement in which the inlet opening 950 and the outlet opening 952 are facing each other, offset in a parallel direction, as shown in Figure 4B. In other words, the arrangement in which the orientation of the inlet opening and the orientation of the outlet opening are not facing each other does not include at least the arrangements shown in Figures 4A and 4B.

[0032] Thus, in the trap device 500, the orientation of the inlet opening 522 and the orientation of the outlet opening 534 are not arranged to face each other. Therefore, the gas flowing in from the inlet opening 522 cannot move in a straight line towards the outlet opening 534. In other words, the gas flowing in from the inlet opening 522 wanders around inside the chamber 510 before moving towards the outlet opening 534. As a result, the pressure loss of the gas flowing inside the chamber 510 increases. Furthermore, the chamber 510 is relatively larger than the inlet pipe 520. Therefore, inside the chamber 510, the gas can flow through a relatively larger space than when flowing through the inlet pipe 520. In other words, inside the chamber 510, the gas can flow through a flow path with a relatively larger cross-sectional area than when flowing through the inlet pipe 520. As a result, the gas flow velocity inside the chamber 510 slows down. When the gas flow velocity slows down, the particles contained in the gas are less likely to be stirred up by the gas flow and accumulate on the bottom surface 513 of the chamber 510 and are removed. In other words, the trap device 500 can remove particles contained in the gas.

[0033] Furthermore, it is preferable that there be a larger area within the chamber 510 where the flow velocity of the upward component of the gas is slower than the settling velocity of the particles. This is because in such areas, particles that have already fallen will not be lifted upward by the gas. For example, the trap device 500 occupies 50%, 60%, 70%, 80%, or 90% or more of the total volume within the chamber 510. It may be configured such that it becomes such a region.

[0034] Furthermore, the trap device 500 is not limited to the above configuration, and does not need to be configured such that the orientation of the inlet opening 522 and the orientation of the outlet opening 534 face each other. In another embodiment of the present disclosure, for example, the inlet opening 522 may be located inside the chamber 510, and the outlet opening 534 may be located on the surface of the chamber 510.

[0035] The trapping device 500 also includes, for example, a powder recovery port 542 and a service port 544. The powder recovery port 542 is located, for example, on the side 515. The powder recovery port 542 is used to recover powder accumulated inside the chamber 510. The service port 544 is located, for example, on the side 515. The service port 544 is used for mounting an analyzer.

[0036] <Trap device 550> Figure 5A is a structural diagram showing the configuration of a trap device 550, which is separate from the trap device 500. Figure 5B is a cross-sectional view of the trap device 550. The trap device 550 is interchangeable with the trap device 500 in the exhaust system 100 and is configured to be used in the exhaust system 100.

[0037] The trap device 550 is in fluid communication with the plasma generator 300 and has the function of removing powder from the powder-containing gas supplied from the plasma generator 300 (see Figure 1). More specifically, the trap device 550 includes, as an example, a chamber 560, an inlet pipe 570, and an outlet pipe 580. The chamber 560 has an L-shaped cross-section and has a first upper surface 562, a second upper surface 563, a bottom surface 564, and five sides 565, 566, 567, 567, 568, and 569. The first upper surface 562, the second upper surface 563, the bottom surface 564, and the five sides 565, 566, 567, 567, 568, and 569 are the surfaces of the chamber 560. The first upper surface 562, the second upper surface 563, and the bottom surface 564 are rectangular thin plates. The second upper surface 563 is located above the first upper surface 562. Sides 565, 566, and 569 are rectangular thin plates. Side 565 connects the first upper surface 562 and the bottom surface 564. Side 566 connects the second upper surface 563 and the bottom surface 564. Side 569 connects the first upper surface 562 and the second upper surface 563. Sides 567 and 568 are L-shaped thin plates. Sides 567 and 568 connect the first upper surface 562, the second upper surface 563, and the bottom surface 564. The chamber 560 does not contain any liquid and is in a dry state.

[0038] The inlet pipe 570 is configured to provide fluid communication between the plasma generator 300 and the chamber 560 (see Figure 1). The inlet pipe 570 has an inlet opening 572 located on the first upper surface 562. In other words, the inlet opening 572 faces the bottom surface 564.

[0039] On the other hand, the outlet pipe 580 is configured to exhaust the gas inside the chamber 560 to the vacuum pump 120, which is outside the chamber 560. More specifically, the outlet pipe 580 penetrates the bottom surface 564 in the portion located directly below the second top surface 563 and extends through the interior of the chamber 510 toward the second top surface 563. The outlet pipe 580 has an outlet opening 582 located inside the chamber 560. The outlet opening 582 is formed in a portion of the outer circumferential surface of the outlet pipe 580 that is cut out. The outlet opening 582 does not face upwards, but rather toward the side surface 566. In other words, in the trap device 550, the orientation of the inlet opening 572 and the orientation of the outlet opening 582 are not arranged to face each other. The body of the outlet pipe 580 and the wall surface of the chamber 560 are located between the inlet opening 572 and the outlet opening 584, and the body of the outlet pipe 580 and the wall surface of the chamber 560 act as shields 552 and 554. In other words, there are always obstructions 552 and 554 on the straight line connecting the inlet opening 572 and the outlet opening 582, and the line connecting the inlet opening 572 and the outlet opening 582 does not pass through the obstructions 552 and 554. I cannot draw a straight line.

[0040] Thus, in the trap device 550, the orientation of the inlet opening 572 and the orientation of the outlet opening 582 are not arranged to face each other. For this reason, the trap device 550 can remove particles contained in the gas using the same principle as the trap device 500 described above.

[0041] The trapping device 550 also includes, for example, a powder recovery port 592 and a service port 594. The powder recovery port 592 is located, for example, on the side 566. The powder recovery port 592 is used to recover powder accumulated inside the chamber 560. The service port 594 is located, for example, on the side 566. The chamber 560 is used for mounting an analyzer.

[0042] <Trap device 600> Figure 6A is a structural diagram showing the configuration of trap device 600, which is separate from trap device 500 and trap device 550. Figure 6B is a plan view of trap device 600. Figure 6C is a cross-sectional view of trap device 600. Trap device 600 is interchangeable with trap device 500 in exhaust system 100 and is configured to be used in exhaust system 100.

[0043] The trap device 600 is in fluid communication with the plasma generator 300 and has the function of removing powder from the powder-containing gas supplied from the plasma generator 300 (see Figure 1). More specifically, the trap device 600 includes, as an example, a chamber 610, an inlet pipe 620, and an outlet pipe 630. The chamber 610 has a rectangular parallelepiped shape and has a top surface 612, a bottom surface 613, and four sides 614, 615, 616, and 617 connecting the top surface 612 and the bottom surface 613. The top surface 612, the bottom surface 613, and the sides 614, 615, 616, and 617 are thin rectangular plates. The top surface 612, the bottom surface 613, and the sides 614, 615, 616, and 617 are the surfaces of the chamber 610. The chamber 610 does not contain any liquid and is in a dry state.

[0044] The inlet pipe 620 is configured to provide fluid communication between the plasma generator 300 and the chamber 610 (see Figure 1). The inlet pipe 620 has an inlet opening 622 located on the top surface 612. In other words, the inlet opening 622 faces the bottom surface 613.

[0045] On the other hand, the outlet pipe 630 is configured to exhaust the gas inside the chamber 610 to the vacuum pump 120, which is outside the chamber 610. More specifically, the outlet pipe 630 penetrates the side 614, bends in an L-shape at a bend 632 located inside the chamber 610, and extends from the bend 632 toward the bottom surface 613. The outlet pipe 630 has an outlet opening 634 located inside the chamber 610. The outlet opening 634 does not face upwards, but faces toward the bottom surface 613. In other words, in the trap device 600, the orientation of the inlet opening 622 and the orientation of the outlet opening 634 are not arranged to face each other. The body of the outlet pipe 630 is located between the inlet opening 622 and the outlet opening 634, and the body of the outlet pipe 630 acts as a shield 602. In other words, there is always an obstruction 602 on the straight line connecting the inlet opening 622 and the outlet opening 634, and it is impossible to draw a straight line connecting the inlet opening 622 and the outlet opening 634 without passing through the obstruction 602.

[0046] Thus, in the trap device 600, the orientation of the inlet opening 622 and the orientation of the outlet opening 634 are not arranged to face each other. For this reason, the trap device 600 can remove particles contained in the gas using the same principle as the trap device 500 described above.

[0047] The trapping device 600, for example, includes two powder recovery ports 642 and 643. The powder recovery port 642 is located, for example, on side 617. The powder recovery port 643 is located, for example, on side 616. The powder recovery ports 642 and 643 are used to recover powder accumulated inside the chamber 610. Thus, the trap device 600 may have two or more powder recovery ports 642 and 643.

[0048] <Trap device 800> Figure 7 is a cross-sectional view showing the configuration of trap device 800, which is separate from trap device 500, trap device 550, and trap device 600. Trap device 800 is interchangeable with trap device 500 in the exhaust system 100 and is configured to be used in the exhaust system 100.

[0049] The trap device 800 is in fluid communication with the plasma generator 300 and has the function of removing powder from the powder-containing gas supplied from the plasma generator 300 (see Figure 1). More specifically, the trap device 800 includes, as an example, a chamber 810, an inlet pipe 820, and an outlet pipe 830. The chamber 810 has a rectangular parallelepiped shape and has a top surface 812, a bottom surface 813, and four sides connecting the top surface 812 and the bottom surface 813. The top surface 812, the bottom surface 813, and the four sides are rectangular thin plates. The top surface 812, the bottom surface 813, and the four sides are the surfaces of the chamber 810. The chamber 810 does not contain any liquid and is in a dry state.

[0050] The inlet pipe 820 is configured to provide fluid communication between the plasma generator 300 and the chamber 810 (see Figure 1). The inlet pipe 820 has an inlet opening 822 located on the top surface 812. In other words, the inlet opening 822 faces the bottom surface 813.

[0051] On the other hand, the outlet pipe 830 is configured to exhaust the gas inside the chamber 810 to the vacuum pump 120, which is outside the chamber 810. The outlet pipe 830 has an outlet opening 832 located on the bottom surface 813. In other words, the outlet opening 832 faces the top surface 812. The inlet opening 822 and the outlet opening 832 are circular, for example. The centerline of the inlet opening 822 coincides with the centerline of the outlet opening 832, for example. That is, in the trap device 800, the orientation of the inlet opening 822 and the orientation of the outlet opening 832 are arranged to face each other.

[0052] Furthermore, the trap device 800 includes a shield 802 located between the inlet opening 822 and the outlet opening 832. In other words, the shield 802 is always located on the straight line connecting the inlet opening 822 and the outlet opening 832, and it is impossible to draw a straight line connecting the inlet opening 822 and the outlet opening 832 without passing through the shield 802. The shield 802 is formed from a thin plate, for example.

[0053] Thus, in the trap device 800, a shield 802 is positioned between the inlet opening 822 and the outlet opening 832. Therefore, the gas flowing in from the inlet opening 822 cannot move in a straight line towards the outlet opening 832. In other words, the gas flowing in from the inlet opening 822 wanders around the chamber 810 before moving towards the outlet opening 832. As a result, the pressure loss of the gas flowing in the chamber 810 increases. Furthermore, the chamber 810 is relatively larger than the inlet pipe 820. Therefore, the gas inside the chamber 810 can flow through a relatively larger space than when flowing through the inlet pipe 820. In other words, the gas inside the chamber 810 can flow through a flow path with a relatively larger cross-sectional area than when flowing through the inlet pipe 820. As a result, the gas flow velocity inside the chamber 810 slows down. When the gas flow velocity slows down, the particles contained in the gas are less likely to be stirred up by the gas flow and accumulate on the bottom surface 813 of the chamber 810, where they are removed. In other words, the trap device 800 can remove particles contained in the gas.

[0054] Now, in the exhaust system 100, if the vacuum pump 120 fails and stops, the vacuum pressure of the plasma generator 300 cannot be maintained (see Figure 1). In this case, the plasma generator 300 can maintain plasma generation by increasing the power supplied by the power supply 306 to the coil 304. However, increasing the power places a high load on each component of the plasma generator 300, which is undesirable. Also, if the abatement device 130 fails and stops, unabated gas will be released into the atmosphere, which is undesirable.

[0055] In contrast, in the exhaust system 100, when the control device 220 detects the shutdown of any of the plasma generator 300, vacuum pump 120, and abatement device 130, it shuts down the remaining device among the plasma generator 300, vacuum pump 120, and abatement device 130, and also outputs a signal to the semiconductor manufacturing equipment 110 to stop the semiconductor manufacturing process. This prevents the harmful effects of releasing toxic gases when any of the plasma generator 300, vacuum pump 120, or abatement device 130 shuts down.

[0056] Furthermore, the exhaust system 100 is equipped with a valve 108. The valve 108 has the function of adjusting the flow rate of gas supplied from the trap device 500 to the vacuum pump 120.

[0057] Furthermore, in the event of a malfunction in the plasma processing system 200, or during maintenance to remove powder collected from inside the trap device 500, the operator may want to disconnect the plasma processing system 200 from the semiconductor manufacturing equipment 110 and the vacuum pump 120. If the semiconductor chamber 112 is opened to atmospheric pressure when the operator disconnects the plasma processing system 200 from the semiconductor manufacturing equipment 110, more steps will be required for the semiconductor manufacturing equipment 110 to restart operation. This will increase the time it takes to restart operation. In contrast, with the exhaust system 100, the operator can disconnect the plasma processing system 200 from the semiconductor manufacturing equipment 110 with valve 114 closed. This prevents the semiconductor chamber 112 from being opened to atmospheric pressure, thus shortening the time it takes to restart operation. Note that when disconnecting the plasma processing system 200 from the semiconductor manufacturing equipment 110, the operator may also close valve 108 along with valve 114. This prevents the adverse effects of the vacuum pump 120 being opened to atmospheric pressure, which will be described later.

[0058] Furthermore, when the operator disconnects the plasma processing system 200 from the vacuum pump 120, if the vacuum pump 120 is released to atmospheric pressure, the internal pressure of the vacuum pump 120 will rise, requiring a longer time for the vacuum pump 120 to create a vacuum again. In contrast, with the exhaust system 100, the operator can disconnect the plasma processing system 200 from the vacuum pump 180 with valve 108 closed. This prevents the vacuum pump 120 from being released to atmospheric pressure, shortening the time it takes for the vacuum pump 120 to create a vacuum again. The operator may also close valve 114 along with valve 108 when disconnecting the plasma processing system 200 from the vacuum pump 120. This prevents the aforementioned problems caused by the semiconductor chamber 112 being released to atmospheric pressure.

[0059] ≪Plasma Treatment System 202≫ Figure 8 is a perspective view of a plasma processing system 202 according to another embodiment of the present disclosure. The plasma processing system 202 is interchangeable with the plasma processing system 200 in the exhaust system 100 and is configured to be used in the exhaust system 100. Referring to Figure 8, the plasma processing system 202 includes, for example, a plasma generator 300, a trap device 650, a gas supply device 400, and a control device 220. The plasma generator 300, gas supply device 400, and control device 220 of the plasma processing system 202 have, for example, the same configuration as those of the plasma processing system 200. Therefore, a description of these is omitted.

[0060] The trapping device 650 includes, as an example, a chamber 652 and a powder collector 654. The powder collector 654 is located inside the chamber 652 and is configured to be positively charged. More specifically, the powder collector 654 is a conductive plate and is connected to a power supply (not shown). The powder collector 654 becomes positively charged when a voltage is applied from the power supply.

[0061] As mentioned above, the powder contained in the gas discharged from the plasma generator 300 is a metal oxide (Me x Oy ) R is. The metal oxide (Me x O y ) R When exposed to the plasma 312, it collides with ions and electrons and becomes negatively charged. When such a negatively charged metal oxide powder (Me x O y ) R enters the inside of the trap device 650, it is attracted to the powder collector 654 by the Coulomb force. As a result, the trap device 650 can collect more powder than when it does not include the powder collector 654.

[0062] In another embodiment according to the present disclosure, the trap devices 500, 550, 600, 800 described above may include a powder collector 654.

[0063] ≪Plasma processing system 204≫ FIG. 9 is a block diagram of a plasma processing system 204 according to another embodiment of the present disclosure. The plasma processing system 204 is replaceable with the plasma processing system 200 in the exhaust system 100 and is configured to be usable in the exhaust system 100. Referring to FIG. 9, the plasma processing system 204 includes, as an example, a plasma generator 300, a trap device (an example of a first trap device) 700, a trap device (an example of a second trap device) 750, and a switching device 210. The plasma generator 300 of the plasma processing system 202 has, as an example, the same configuration as that of the plasma processing system 200. Therefore, the description of the plasma generator 300 is omitted.

[0064] Referring to Figure 9, the trap device 700 is in fluid communication with the plasma generator 300 and has the function of removing powder from the powder-containing gas supplied from the plasma generator 300. More specifically, the trap device 700 includes, as an example, a chamber 710, an inlet pipe 720, an outlet pipe 730, a shutter 740, and a powder collector 704. The chamber 710 does not contain any liquid and is in a dry state. Furthermore, the chamber 710 includes a gas flow chamber 712 and a collection chamber 714.

[0065] The powder collector 704 is located inside the collection chamber 714 and is configured to be positively charged. As a result, the powder collected by the trap device 700 is attracted to the powder collector 704 and accumulates more in the collection chamber 714.

[0066] The shutter 740 is, for example, a gate valve, and when closed, it can separate the gas flow chamber 712 from the collection chamber 714. In the trap device 700, when the shutter 740 is closed, the inlet pipe 720 is configured to communicate fluidly with the outlet pipe 730 via the gas flow chamber 712 without going through the collection chamber 714. Therefore, when the shutter 740 is closed, the collection chamber 714 can be opened to the atmosphere while maintaining the vacuum pressure in the gas flow chamber 712. In other words, when the shutter 740 is closed, the worker can access the collection chamber 714 and collect the powder accumulated in the collection chamber 714 while the exhaust system 100 is running.

[0067] On the other hand, the trap device 750 is in fluid communication with the plasma generator 300 and has the function of removing powder from the powder-containing gas supplied from the plasma generator 300. More specifically, the trap device 750 includes, as an example, a chamber 760, an inlet pipe 770, an outlet pipe 780, a shutter 790, and a powder collector 754. Chamber 760 does not contain any liquid and is in a dry state. Furthermore, chamber 760 includes a gas flow chamber 762 and a collection chamber 764.

[0068] The powder collector 754 is located inside the collection chamber 764 and is configured to be positively charged. As a result, the powder collected by the trap device 750 is attracted to the powder collector 754 and accumulates more in the collection chamber 764.

[0069] The shutter 790 is, for example, a gate valve, which, when closed, can separate the gas flow chamber 762 from the collection chamber 764. In the trap device 750, when the shutter 790 is closed, the inlet pipe 770 is configured to communicate fluidly with the outlet pipe 780 via the gas flow chamber 762 without going through the collection chamber 764. Therefore, when the shutter 790 is closed, the collection chamber 764 can be opened to the atmosphere while maintaining the vacuum pressure in the gas flow chamber 762. In other words, when the shutter 790 is closed, the worker can access the collection chamber 764 and collect the powder accumulated in the collection chamber 764 while the exhaust system 100 is running.

[0070] The switching device 210 contains powder supplied from the plasma generator 300. More specifically, the switching device 210 includes valves 212, 214, 216, and 218. Valve 212 is attached to the inlet pipe 720 and has the function of adjusting the flow rate of gas flowing through the inlet pipe 720. Valve 214 is attached to the outlet pipe 730 and has the function of adjusting the flow rate of gas flowing through the outlet pipe 730. Valve 216 is attached to the inlet pipe 770 and has the function of adjusting the flow rate of gas flowing through the inlet pipe 770. Valve 218 is attached to the outlet pipe 780 and has the function of adjusting the flow rate of gas flowing through the outlet pipe 780.

[0071] In the plasma processing system 204, when valves 212 and 216 are opened, gas supplied from the plasma generator 300 is supplied to the trap device 700. On the other hand, when valves 214 and 218 are opened, gas supplied from the plasma generator 300 is supplied to the trap device 750. In other words, the plasma processing system 204 can remove particles from the gas even when one of the trap devices 700 or 750 is being maintained, by using the other trap device 700 or 750. That is, in the plasma processing system 204, an operator can perform maintenance on one of the trap devices 700 or 750 without stopping the system.

[0072] As described above, the plasma processing system 204 had two trap devices 700 and 750, but is not limited to this configuration. In another embodiment of the present disclosure, for example, the plasma processing system 204 may include three or more trap devices and a switching device configured to switch the gas supply destination between these trap devices.

[0073] ≪Exhaust System 102≫ Figure 10 is a block diagram of exhaust system 102, which is separate from exhaust system 100. Referring to Figure 10, exhaust system 102 includes, as an example, a plasma processing system 206, a semiconductor manufacturing apparatus 110, a vacuum pump 120, and a detoxification device 130. The semiconductor manufacturing apparatus 110, vacuum pump 120, and detoxification device 130 of exhaust system 102 have, as an example, the same configuration as those of exhaust system 100. Therefore, their descriptions are omitted. The plasma processing system 206 includes, as an example, a plasma generator 300, a trap device 500, a gas supply device 402, and a control device 220. The plasma generator 300, trap device 500, and control device 220 of plasma processing system 206 have, as an example, the same configuration as those of plasma processing system 200. Therefore, their descriptions are omitted.

[0074] Referring to Figure 10, the gas supply device 402 is connected to the etching gas supply source 983. The etching gas supply source 983 is configured to supply etching gas to the gas supply device 400. The gas supply device 402 is also connected to the trap device 500. The gas supply device 402 is configured to supply etching gas to the trap device 500 at an appropriate flow rate. More specifically, the gas supply device 402 has a flow rate control device (not shown) for adjusting the flow rate of the etching gas. When etching gas is supplied to the trap device 500, the etching gas reacts with the powder accumulated in the trap device 500, causing the powder to vaporize. The vaporized powder is then removed to the outside of the device by passing through the vacuum pump 120 and the abatement device 130. In other words, the plasma processing system 206 can reduce the rate at which powder accumulates in the trap device 500 by using etching gas to remove the powder accumulated in the trap device 500. As a result, the plasma processing system 206 can reduce the frequency of powder recovery operations from the trapping device 500. The etching gas is selected according to the physical properties of the deposited powder. For example, the etching gas may include NF3, CF4, CIF3, C4F8, C2F6, SF6, and / or H2.

[0075] Furthermore, in another embodiment of the present disclosure, as shown in Figure 11, the gas supply device 402 may be configured to supply etching gas to the plasma generator 300 instead of supplying it to the trap device 500. In this case, the plasma generator 300 can radicalize the etching gas supplied from the gas supply device 402 and supply the radicalized etching gas to the trap device 500. As a result, the plasma processing system 206 can remove the powder accumulated in the trap device 500, as in the case of Figure 10, and the frequency of powder recovery work from the trap device 500 can be reduced.

[0076] [Note] Some or all of the above embodiments may also be described as follows, but are not limited to the following:

[0077] (Note 1) The plasma processing system described in Appendix 1 comprises a plasma generator configured to fluidly communicate with a semiconductor chamber of a semiconductor manufacturing apparatus and to perform plasma processing and oxidation processing on a process gas supplied from the semiconductor chamber to pulverize it and form a powder, and a trap device configured to fluidly communicate with the plasma generator and to remove the powder from the gas containing the powder, wherein the trap device comprises a chamber, an inlet pipe configured to fluidly communicate the plasma generator and the chamber and having an inlet opening located inside or on the surface of the chamber, and an outlet pipe for exhausting the gas inside the chamber to the outside of the chamber and having an outlet opening located inside or on the surface of the chamber, wherein the chamber does not contain any liquid and is in a dry state, and the orientation of the inlet opening and the orientation of the outlet opening are not arranged to face each other.

[0078] (Note 2) The plasma processing system described in Appendix 2 is the plasma processing system described in Appendix 1, wherein the trapping device has a powder collector configured to be positively charged within the chamber.

[0079] (Note 3) The plasma processing system relating to Appendix 3 is the plasma processing system described in any one of Appendix 1 to 3, wherein the chamber has a rectangular parallelepiped shape, and has an upper surface, a bottom surface and the upper surface The chamber has a side surface that connects to the bottom surface, the inlet opening is located on the top surface, the outlet piping penetrates the bottom surface, bends in an L-shape at a bend located inside the chamber, and extends from the bend toward the side surface.

[0080] (Note 4) The plasma processing system according to Appendix 4 is the plasma processing system described in any one of Appendix 1 to 3, wherein the chamber has an L-shaped cross-section and has a first upper surface, a second upper surface located above the first upper surface, and a bottom surface, the inlet opening is located on the first upper surface, the outlet piping penetrates the bottom surface in a portion located directly below the second upper surface, extends through the inside of the chamber toward the second upper surface, and the outlet opening is formed in a portion where the outer circumferential surface of the outlet piping is cut out.

[0081] (Note 5) The plasma processing system according to Appendix 5 is the plasma processing system described in any one of Appendix 1 to 3, wherein the chamber has a rectangular parallelepiped shape and has a top surface, a bottom surface, and a side surface connecting the top surface and the bottom surface, the inlet opening is located on the top surface, the outlet piping penetrates the side surface, bends in an L-shape at a bend located inside the chamber, and extends from the bend toward the bottom surface.

[0082] (Note 6) The plasma processing system according to Appendix 6 is the plasma processing system described in Appendix 2, wherein the chamber includes a gas flow chamber and a collection chamber, the trap device has a shutter that separates the gas flow chamber and the collection chamber when closed, the inlet piping is in fluid communication with the outlet piping via the gas flow chamber when the shutter is closed, and the powder collector is located inside the collection chamber.

[0083] (Note 7) The plasma processing system according to Appendix 7 is a plasma processing system according to any one of Appendix 1 to 6, comprising a gas supply device configured to supply etching gas to the plasma generator, wherein the plasma generator is configured to radicalize the etching gas supplied from the gas supply device and to supply the radicalized etching gas for removing the powder to the trap device.

[0084] (Note 8) The plasma processing system according to Appendix 8 is a plasma processing system according to any one of Appendix 1 to 7, and includes a gas supply device configured to supply etching gas for removing the powder to the trap device.

[0085] (Note 9) The plasma processing system according to Appendix 9 is the plasma processing system described in any one of Appendix 1 to 8, wherein the trap device is a first trap device, the plasma processing system comprises a second trap device that is in fluid communication with the plasma generator and removes the powder from the gas containing the powder, and a switching device that can switch the destination of the gas containing the powder supplied from the plasma generator between the first trap device and the second trap device.

[0086] (Note 10) The plasma processing system relating to Appendix 10 is a plasma processing system described in any one of Appendix 1 to 9, comprising: a gas supply device for supplying noble gas, nitrogen gas and oxidizing gas to the plasma generator; and a pressure gauge for measuring the internal pressure of the plasma generator. The gas supply device comprises a first flow control device for adjusting the flow rate of the noble gas, a second flow control device for adjusting the flow rate of the nitrogen gas, and a third flow control device for adjusting the flow rate of the oxidizing gas, and the control device is configured to control the first flow control device, the second flow control device and the third flow control device in accordance with the pressure measured by the pressure gauge.

[0087] (Note 11) The exhaust system according to Appendix 11 comprises a plasma processing system described in any one of Appendix 1 to 10, a semiconductor manufacturing apparatus having the semiconductor chamber, a vacuum pump for evacuating the semiconductor chamber via the plasma generator and the trap device, and a detoxification device for receiving the gas exhausted from the vacuum pump and rendering the received gas harmless.

[0088] (Note 12) The exhaust system relating to Appendix 12 is the exhaust system described in Appendix 11, and includes a control device, which, upon detecting the shutdown of any of the plasma generator, vacuum pump, and abatement device, shuts down the remaining device among the plasma generator, vacuum pump, and abatement device, and outputs a signal to the semiconductor manufacturing apparatus to shut down the semiconductor manufacturing process.

[0089] (Note 13) The plasma processing system according to Appendix 13 is the plasma processing system described in any one of Appendix 1 to 10, wherein the plasma generator comprises a ceramic tube, a coil wound around the outer circumference of the ceramic tube, a power supply for applying a current of a predetermined frequency to the coil, an ammeter for measuring the current flowing through the coil, and a control device, wherein the control device is configured to perform at least one of a first process and a second process when the maximum value of the current measured by the ammeter when the power supply is applying a current to the coil is greater than a predetermined value, in the first process the control device increases the current applied to the coil by the power supply, and in the second process the control device increases the frequency of the current applied to the coil.

[0090] (Note 14) The plasma processing system described in Appendix 14 comprises a plasma generator configured to fluidly communicate with a semiconductor chamber of a semiconductor processing apparatus or semiconductor manufacturing apparatus, and to perform plasma processing and oxidation processing on a process gas supplied from the semiconductor chamber to pulverize it and form a powder; and a trap device configured to fluidly communicate with the plasma generator and to remove the powder from the gas containing the powder. The trap device comprises a chamber, an inlet pipe configured to fluidly communicate the plasma generator and the chamber, having an inlet opening located inside or on the surface of the chamber, an outlet pipe for exhausting the gas inside the chamber to the outside of the chamber, having an outlet opening located inside or on the surface of the chamber, and a shield located between the inlet opening and the outlet opening. The chamber does not contain any liquid and is in a dry state.

[0091] The embodiments of the present invention and their respective modifications have been described above. It goes without saying that the examples described above are for the purpose of facilitating understanding of the present invention and do not limit it. The present invention can be modified and improved as appropriate without departing from its spirit, and equivalents thereof are included in the present invention. Furthermore, any combination or omission of the components described in the claims and specification is possible to the extent that at least a part of the above-described problems can be solved or at least a part of the effects can be achieved. [Explanation of Symbols]

[0092] 100,102: Exhaust system 110: Semiconductor manufacturing equipment 112: Semiconductor Chamber 120: Vacuum pump 130:Abatement device 200, 202, 204, 206: Plasma processing system 210: Switching device 220: Control device 222: Pressure gauge 300: Plasma generator 302: Ceramic tube 304: Coil 306: Power supply 308: Ammeter 310: Control device 312: Plasma 400,402: Gas supply equipment 410: First flow control device 420: Second flow control device 430: Third flow control device 500: Trap device 510: Chamber 520: Inlet piping 522: Entrance opening 530: Outlet piping 532: Curve 534:Exit opening 550: Trap device 560: Chamber 570: Inlet piping 572: Entrance opening 580: Outlet piping 582:Exit opening 600: Trap device 610: Chamber 620: Inlet piping 622: Entrance opening 630: Outlet piping 632:Exit opening 632: Curve 634:Exit opening 642,643: Ports for powder recovery 650: Trap device 652: Chamber 654: Powder collector 700: Trap device 704: Powder collector 710: Chamber 712: Gas flow chamber 714: Collection room 720: Inlet piping 730: Outlet piping 740: Shutter 750: Trap device 754: Powder collector 760: Chamber 762: Gas flow chamber 764: Collection room 770: Inlet piping 780: Outlet piping 790: Shutter

Claims

1. A plasma generator is configured to fluidly communicate with the semiconductor chamber of a semiconductor manufacturing apparatus and to perform plasma treatment and oxidation treatment on the process gas supplied from the semiconductor chamber to pulverize it and form a powder. A trap device is connected to the plasma generator via a fluid to remove the powder from the gas containing the powder, Equipped with, The aforementioned trap device, Chamber and, An inlet pipe configured to provide fluid communication between the plasma generator and the chamber, the inlet pipe having an inlet opening located inside or on the surface of the chamber, An outlet pipe for exhausting the gas inside the chamber to the outside of the chamber, the outlet pipe having an outlet opening located inside or on the surface of the chamber, It has, The chamber does not contain any liquid and is in a dry state. The orientation of the inlet opening and the orientation of the outlet opening are not arranged to face each other. Plasma processing system.

2. A plasma processing system according to claim 1, The trapping device has a powder collector configured to be positively charged within the chamber. Plasma processing system.

3. A plasma processing system according to claim 1 or 2, The chamber has a rectangular parallelepiped shape and has a top surface, a bottom surface, and a side surface connecting the top surface and the bottom surface. The inlet opening is located on the upper surface, The outlet pipe penetrates the bottom surface, bends in an L-shape at a bend located inside the chamber, and extends from the bend toward the side surface. Plasma processing system.

4. A plasma processing system according to claim 1 or 2, The chamber has an L-shaped cross-section and includes a first upper surface, a second upper surface located above the first upper surface, and a bottom surface. The inlet opening is located on the first upper surface, The outlet piping penetrates the bottom surface at a point directly below the second upper surface and extends through the inside of the chamber toward the second upper surface. The outlet opening is formed in a portion of the outer surface of the outlet pipe that is cut out. Plasma processing system.

5. A plasma processing system according to claim 1 or 2, The chamber has a rectangular parallelepiped shape and has a top surface, a bottom surface, and a side surface connecting the top surface and the bottom surface. The inlet opening is located on the upper surface, The outlet pipe penetrates the side surface, bends in an L-shape at a bend located inside the chamber, and extends from the bend toward the bottom surface. Plasma processing system.

6. A plasma processing system according to claim 2, The chamber includes a gas flow chamber and a collection chamber. The trap device has a shutter that, when closed, separates the gas flow chamber and the collection chamber. When the shutter is closed, the inlet piping is in fluid communication with the outlet piping via the gas flow chamber. The powder collector is located inside the collection chamber. Plasma processing system.

7. A plasma processing system according to claim 1 or 2, The system includes a gas supply device configured to supply etching gas to the plasma generator, The plasma generator is configured to radicalize the etching gas supplied from the gas supply device and to supply the radicalized etching gas to the trap device for removing the powder. Plasma processing system.

8. A plasma processing system according to claim 1 or 2, The system includes a gas supply device configured to supply etching gas for removing the aforementioned powder to the trap device. Plasma processing system.

9. A plasma processing system according to claim 1 or 2, The aforementioned trap device is a first trap device, The aforementioned plasma processing system is A second trap device is connected to the plasma generator via a fluid to remove the powder from the gas containing the powder, A switching device that can switch the supply destination of the gas containing the powder supplied from the plasma generator between the first trap device and the second trap device, Equipped with, Plasma processing system.

10. A plasma processing system according to claim 1 or 2, A gas supply device for supplying noble gas, nitrogen gas, and oxidizing gas to the plasma generator, A pressure gauge for measuring the internal pressure of the plasma generator, Control device and Equipped with, The aforementioned gas supply device is A first flow rate control device for adjusting the flow rate of the noble gas, A second flow rate control device for adjusting the flow rate of the nitrogen gas, A third flow control device for adjusting the flow rate of the oxidizing gas, It has, The control device is configured to control the first flow control device, the second flow control device, and the third flow control device in accordance with the pressure measured by the pressure gauge. Plasma processing system.

11. A plasma processing system according to claim 1 or 2, The semiconductor manufacturing apparatus having the semiconductor chamber, A vacuum pump for evacuating the semiconductor chamber via the plasma generator and the trap device, A detoxification device for receiving the gas exhausted from the aforementioned vacuum pump and rendering the received gas harmless, Equipped with, Exhaust system.

12. The exhaust system according to claim 11, Equipped with a control device, When the control device detects the shutdown of any of the plasma generator, vacuum pump, and abatement device, it shuts down the remaining device among the plasma generator, vacuum pump, and abatement device, and outputs a signal to the semiconductor manufacturing apparatus to stop the semiconductor manufacturing process. Exhaust system.

13. A plasma processing system according to claim 1 or 2, The aforementioned plasma generator is Ceramic tube and A coil wound around the outer circumference of the ceramic tube, A power supply that applies a current of a predetermined frequency to the coil, An ammeter for measuring the current flowing through the coil, Control device and Equipped with, The control device is configured to execute at least one of the first and second processes when the maximum value of the current measured by the ammeter while the power supply is applying current to the coil is greater than a predetermined value. In the first process, the control device increases the current that the power supply applies to the coil. In the second process, the control device increases the frequency of the current applied to the coil. Plasma processing system.

14. A plasma generator is configured to fluidly communicate with the semiconductor chamber of a semiconductor processing apparatus and to perform plasma treatment and oxidation treatment on the process gas supplied from the semiconductor chamber to pulverize it and form a powder. A trap device is connected to the plasma generator via a fluid to remove the powder from the gas containing the powder, Equipped with, The aforementioned trap device, Chamber and, An inlet pipe configured to provide fluid communication between the plasma generator and the chamber, the inlet pipe having an inlet opening located inside or on the surface of the chamber, An outlet pipe for exhausting the gas inside the chamber to the outside of the chamber, the outlet pipe having an outlet opening located inside or on the surface of the chamber, A shield located between the aforementioned inlet opening and the aforementioned outlet opening, It has, The chamber does not contain any liquid and is in a dry state. Plasma processing system.

Images