Template, method for reproducing the template, and method for manufacturing the template

Abstract

To facilitate playback processing. [Solution] The template of the embodiment comprises a substrate and a resin layer bonded to the substrate and having a pattern on the surface opposite to the surface facing the substrate, and the resin layer and the substrate side each have recesses and protrusions on their opposing surfaces that can be interlocked with each other.

Description

Technical Field

[0001] Embodiments of the present invention relate to a template, a method for reproducing a template, and a method for manufacturing a template.

Background Art

[0002] The manufacturing process of a semiconductor device may include an imprint process. In the imprint process, a template for transferring a pattern to a semiconductor substrate is repeatedly used. In order to reproduce a template that has been repeatedly used and consumed, the pattern portion of the template may be formed of a resin layer that can be replaced.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Patent Document 2

Summary of the Invention

Problems to be Solved by the Invention

[0004] One embodiment aims to provide a template, a method for reproducing a template, and a method for manufacturing a template that can easily perform a reproduction process.

Means for Solving the Problems

[0005] The template of the embodiment includes a substrate, and a resin layer that is adhered to the substrate and has a pattern on a surface opposite to the surface facing the substrate side, and the resin layer and the substrate side have concave portions and convex portions that can be fitted to each other on their opposing surfaces.

Brief Description of the Drawings

[0006] [Figure 1]A schematic diagram showing an example of the configuration of the template according to Embodiment 1. [Figure 2] A cross-sectional view illustrating part of the procedure for the imprint method using a template according to Embodiment 1. [Figure 3] A cross-sectional view illustrating a part of the procedure for forming a pattern on a semiconductor substrate according to Embodiment 1. [Figure 4] A cross-sectional view illustrating, in sequence, some of the steps of the manufacturing method of the template type according to Embodiment 1. [Figure 5] A cross-sectional view illustrating, in sequence, some of the steps of the template manufacturing method according to Embodiment 1. [Figure 6] A cross-sectional view illustrating, in order, some of the steps of the method for manufacturing a template according to Embodiment 1. [Figure 7] A cross-sectional view illustrating, in order, some of the steps in the method for manufacturing a template according to Embodiment 1. [Figure 8] A cross-sectional view illustrating part of the procedure for the template reproduction method according to Embodiment 1. [Figure 9] A schematic diagram showing an example of the configuration of a template according to Modification 1 of Embodiment 1. [Figure 10] A schematic diagram showing an example of the template configuration according to a modified example 2 of Embodiment 1. [Figure 11] A cross-sectional view illustrating part of the procedure for an imprinting method using a template according to a modified example 2 of Embodiment 1. [Figure 12] A cross-sectional view showing an example of the configuration of a template mold used in the manufacture of a template according to a modified example 2 of Embodiment 1. [Figure 13] A cross-sectional view illustrating, in sequence, a part of the procedure for manufacturing a template according to a modified example 2 of Embodiment 1. [Figure 14] A cross-sectional view illustrating, in sequence, a part of the procedure for manufacturing a template according to a modified example 2 of Embodiment 1. [Figure 15] A cross-sectional view illustrating, in sequence, a part of the procedure for manufacturing a template according to a modified example 2 of Embodiment 1. [Figure 16]Schematic diagram showing an example of the configuration of a template according to Modification Example 3 of Embodiment 1. [Figure 17] Cross-sectional view showing an example of the configuration of a template mold used for manufacturing a template according to Modification Example 3 of Embodiment 1. [Figure 18] Cross-sectional views sequentially illustrating a part of the procedure of a method for manufacturing a template according to Modification Example 3 of Embodiment 1. [Figure 19] Cross-sectional views sequentially illustrating a part of the procedure of a method for manufacturing a template according to Modification Example 3 of Embodiment 1. [Figure 20] Schematic diagram showing an example of the configuration of a template according to another modification example of Embodiment 1. [Figure 21] Cross-sectional views sequentially illustrating a part of the procedure of a method for manufacturing a template mold according to Embodiment 2. [Figure 22] Cross-sectional views sequentially illustrating a part of the procedure of a method for manufacturing a template mold according to Embodiment 2. [Figure 23] Cross-sectional views sequentially illustrating a part of the procedure of a method for manufacturing a template according to Embodiment 2. [Figure 24] Cross-sectional views sequentially illustrating a part of the procedure of a method for manufacturing a template mold according to a modification example of Embodiment 2. [Figure 25] Cross-sectional views sequentially illustrating a part of the procedure of a method for manufacturing another template mold according to a modification example of Embodiment 2.

Mode for Carrying Out the Invention

[0007] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. Note that the present invention is not limited by the following embodiments. Also, the constituent elements in the following embodiments include those that can be easily assumed by those skilled in the art or those that are substantially the same.

[0008] [Embodiment 1] Hereinafter, Embodiment 1 will be described in detail with reference to the drawings.

[0009] (Example of Template Configuration) Figure 1 is a schematic diagram showing an example of the configuration of template 1 according to Embodiment 1. More specifically, Figure 1(a) is a cross-sectional view showing the entire template 1, Figure 1(b) is a partially enlarged cross-sectional view of template 1, and Figures 1(c) to 1(f) are enlarged cross-sectional views of the anchor patterns 12a to 12c and 24a to 24c of template 1.

[0010] The template 1 of Embodiment 1 is used in imprint processing and is configured to have a replaceable resin layer 20. In imprint processing, the pattern 21 of the template 1 is pressed onto a resist layer formed on a semiconductor substrate and transferred. By using the resist layer onto which the pattern 21 has been transferred as a mask and processing the semiconductor substrate, a desired pattern that will become part of a semiconductor device can be formed on the semiconductor substrate.

[0011] As shown in Figure 1(a), the template 1 comprises a quartz substrate 10 and a resin layer 20.

[0012] The quartz substrate 10 is formed in a flat plate shape and has a mesa portion 11 protruding from one surface. The quartz substrate 10 has a recess, for example, called a counterbore 13, on the other surface.

[0013] The protruding surface of the mesa portion 11 is provided with an anchor pattern 12 containing multiple irregularities and an alignment mark MK.

[0014] The alignment mark MK has a recess 14 that is indented from the surface of the mesa portion 11, and a metal layer 15 such as a chromium layer provided on the bottom surface of the recess 14. The alignment mark MK is used to align the semiconductor substrate and the template 1 when pressing the template 1 against the resist layer of the semiconductor substrate.

[0015] In addition to the alignment mark MK mentioned above, the mesa portion 11 is also provided with alignment marks and inspection marks not shown. These alignment marks and inspection marks may have various shapes, such as line and space patterns, dot patterns, and hole patterns. These alignment marks and inspection marks may or may not include a metal layer such as a chromium layer.

[0016] The resin layer 20 is at least one of a silicon-containing resin layer, an acrylic resin layer, or a urethane resin layer, and is bonded to the protruding surface of the mesa portion 11. Hereafter, the surfaces to which the resin layer 20 and the mesa portion 11 are bonded to each other will also be referred to as the bonding surface of the resin layer 20 and the bonding surface of the mesa portion 11, respectively. In other words, the protruding surface of the mesa portion 11 that protrudes from the quartz substrate 10 corresponds to the bonding surface of the mesa portion 11.

[0017] The resin layer 20 has an anchor pattern 22 on its bonding surface with the mesa portion 11, which includes a plurality of irregularities configured to interlock with the anchor pattern 12 of the mesa portion 11. By interlocking the anchor pattern 12 of the mesa portion 11 and the anchor pattern 22 of the resin layer 20 with each other, the bonding strength against lateral displacement between the mesa portion 11 and the resin layer 20 can be increased. In other words, the anchor patterns 12 and 22 of the mesa portion 11 and the resin layer 20 have an anchoring effect that connects the mesa portion 11 and the resin layer 20 to each other. The force applied to the mesa portion 11 and the resin layer 20 due to lateral displacement between the mesa portion 11 and the resin layer 20 is also called shear stress.

[0018] The anchor patterns 12 and 22 may be distributed across the entire surface of the adhesive surface between the resin layer 20 and the mesa portion 11, or they may be provided only on a portion of these adhesive surfaces. In addition, the alignment marks MK mentioned above, other anchor marks not shown, or inspection marks may be used as anchor patterns instead of, or in addition to, the anchor patterns 12 and 22.

[0019] Furthermore, the resin layer 20 has a pattern 21 on the side opposite to the surface that adheres to the mesa portion 11, for transfer to the resist layer of the semiconductor substrate. Depending on the processed shape of the semiconductor substrate, the pattern 21 can have various shapes such as line and space patterns, dot patterns, and hole patterns.

[0020] Furthermore, the resin layer 20 has recesses 24 on the surface where the pattern 21 is formed that overlap vertically with the alignment marks MK of the quartz substrate 10.

[0021] As shown in Figure 1(b), the template 1 has multiple layers, such as protective layers 41, 61 and an adhesive layer 51, at the interface between the resin layer 20 and the quartz substrate 10, and on the surface of the resin layer 20.

[0022] The protective layer 41 is positioned on the surface of the quartz substrate 10 where the mesa portion 11 is provided, and on the side surface of the quartz substrate 10. That is, the protective layer 41 continuously covers the side surface of the quartz substrate 10, the surface of the quartz substrate 10 where the mesa portion 11 is provided, the side surface of the mesa portion 11, and the protruding surface of the mesa portion 11, i.e., the surface that adheres to the resin layer 20.

[0023] Within the recess 14 of the alignment mark MK, the protective layer 41 covers the side surface of the recess 14 and the metal layer 15 positioned within the recess 14.

[0024] The protective layer 41 is, for example, at least one of an aluminum oxide layer, a titanium oxide layer, or a silicon oxide layer, and is a layer for protecting the surface of the quartz substrate 10.

[0025] The adhesive layer 51 is positioned on the surface of the quartz substrate 10 where the mesa portion 11 is provided, via the protective layer 41. That is, the adhesive layer 51 continuously covers the surface of the quartz substrate 10 on which the mesa portion 11 is provided, the side surface of the mesa portion 11, and the protruding surface of the mesa portion 11, i.e., the bonding surface with the resin layer 20, via the protective layer 41. However, the adhesive layer 51 is not provided on the side surface of the quartz substrate 10.

[0026] Furthermore, within the recess 14 of the alignment mark MK, the adhesive layer 51 covers the surface of the metal layer 15 provided on the side surface and bottom surface of the recess 14 via the protective layer 41.

[0027] The adhesive layer 51 is, for example, an SOC (Spin-On Carbon) layer, and is a layer for bonding the mesa portion 11 of the quartz substrate 10 to the resin layer 20. The SOC layer is formed using spin coating or the like and is a layer containing a large amount of carbon.

[0028] The protective layer 61 is positioned on the surface of the quartz substrate 10 where the mesa portion 11 is provided, including the surface excluding the mesa portion 11, the side surface, and the side surface and the surface where the pattern 21 of the resin layer 20 is provided. In other words, the protective layer 61 continuously covers the side surface of the quartz substrate 10, the surface of the quartz substrate 10 where the mesa portion 11 is provided, and extends from the side surface of the mesa portion 11 to the side surface of the resin layer 20, up to the pattern 21 of the resin layer 20.

[0029] On the side surface of the quartz substrate 10, the protective layer 61 is arranged via the protective layer 41 described above. On the side surface of the quartz substrate 10 where the mesa portion 11 is provided and on the side surface of the mesa portion 11, the protective layer 61 is arranged via the protective layer 41 and the adhesive layer 51 described above. On the side surface of the resin layer 20 and the surface where the pattern 21 is provided, the protective layer 61 directly covers the surface of the resin layer 20.

[0030] On the surface of the resin layer 20 on which the pattern 21 is provided, the protective layer 61 covers the sides and bottom surfaces of the aforementioned recesses 24 which are located in positions that overlap the alignment marks MK vertically, and also covers the entire pattern 21 along the contours of the pattern 21.

[0031] The protective layer 61 is, for example, a silicon oxide layer, and is a layer that protects the pattern 21 of the resin layer 20 and suppresses wear. The protective layer 61 also acts as a trigger to peel off the resin layer 20 when it is replaced.

[0032] As shown in Figures 1(c) to 1(f), the anchor patterns 22 of the resin layer 20 and the anchor patterns 22 of the mesa portion 11 of the quartz substrate 10, which are configured to be interlocked with each other, can have various shapes.

[0033] In the example shown in Figure 1(c), a concave anchor pattern 12a having substantially vertical sides is provided on the quartz substrate 10 side, and a convex anchor pattern 22a that can be fitted into the anchor pattern 12a is provided on the resin layer 20 side.

[0034] As shown in the example in Figure 1(d), the anchor patterns 12 and 22 may have a tapered shape. That is, the anchor pattern 12b on the quartz substrate 10 side may have a tapered shape that narrows from the bottom surface of the concave anchor pattern 12b toward the open end of the surface of the quartz substrate 10. On the other hand, the convex anchor pattern 22b on the resin layer 20 side may have a tapered shape that narrows from the top surface of the anchor pattern 22b toward the base of the surface of the resin layer 20.

[0035] This allows the anchor pattern 12b on the quartz substrate 10 side and the anchor pattern 22b on the resin layer 20 side to interlock with each other. Furthermore, the wedge-like interlocking of the anchor pattern 12b on the quartz substrate 10 side and the anchor pattern 22b on the resin layer 20 side further enhances the adhesive strength against shear stress between the mesa portion 11 and the resin layer 20.

[0036] As shown in the example in Figure 1(e), the convex and concave shapes of the anchor patterns 12 and 22 may be reversed on the quartz substrate 10 side and the resin layer 20 side. That is, a convex anchor pattern 12c can be provided on the quartz substrate 10 side, and a concave anchor pattern 22c can be provided on the resin layer 20 side that can accommodate the anchor pattern 12c on the quartz substrate 10 side. The shapes of these anchor patterns 12c and 22c may be tapered shapes facing in opposite directions, as shown in Figure 1(e), or they may have substantially vertical sides, as shown in Figure 1(a).

[0037] As shown in the example in Figure 1(f), the anchor patterns 12 and 22 on the quartz substrate 10 side and the resin layer 20 side may have a mixture of irregularities. That is, the quartz substrate 10 side is provided with a concave anchor pattern 12b and a convex anchor pattern 12c, and the resin layer 20 side is provided with a convex anchor pattern 22b and a concave anchor pattern 22c that can be fitted into the anchor patterns 12b and 12c on the quartz substrate 10 side, respectively. The shapes of these anchor patterns 12c and 22b may be tapered in opposite directions, as shown in Figure 1(f), or they may have a shape with substantially vertical sides, as shown in Figure 1(a).

[0038] As mentioned above, the anchor patterns 12 and 22 shown in Figures 1(c) to 1(f) are merely examples, and the anchor patterns 12 and 22 can have various shapes and combinations other than those shown above. For example, the anchor patterns 12 and 22 do not have to be such regular patterns. For example, the anchor patterns 12 and 22 may be formed by roughening at least one of the adhesive surfaces of the mesa portion 11 or the resin layer 20. In this case, the roughened adhesive surface of the mesa portion 11 or the resin layer 20 will have irregularly shaped irregularities.

[0039] (Pattern formation method) Next, a method for forming a pattern on a semiconductor substrate W will be described using Figures 2 and 3. The method for forming a pattern on a semiconductor substrate W includes an imprint method using template 1 of Embodiment 1.

[0040] Figure 2 is a cross-sectional view illustrating a part of the procedure for the imprint method using template 1 according to Embodiment 1. Note that in Figure 2, the protective layers 41, 61 and adhesive layer 51 of template 1 are omitted.

[0041] As shown in Figure 2(a), a semiconductor substrate W on which alignment marks MKw are provided is prepared. The semiconductor substrate W is, for example, a silicon substrate. The alignment marks MKw are composed of protrusions, etc., provided on the upper surface of the semiconductor substrate W. In addition to the alignment marks MKw described above, other alignment marks and inspection marks, etc., are also formed on the semiconductor substrate W.

[0042] Furthermore, a workpiece layer, such as a silicon oxide layer, to be patterned may be provided on the semiconductor substrate W. If the workpiece layer is the target of pattern formation, a support substrate, such as an insulating substrate or a conductive substrate, may be used to support the workpiece layer instead of the semiconductor substrate W.

[0043] As shown in Figure 2(b), a resist layer 71 is formed to cover the upper surface of the semiconductor substrate W. The resist layer 71 is, for example, a photocurable resin that hardens when irradiated with ultraviolet light, and is formed on the semiconductor substrate W in an uncured state. At this time, the resist layer 71 can be formed over the entire surface of the semiconductor substrate W using spin coating or the like, or it can be formed by dropping multiple droplets using an inkjet type dropping device or the like.

[0044] Furthermore, the template 1 is positioned so that the pattern 21 of the resin layer 20 faces the semiconductor substrate W. At this time, the alignment mark MKw provided on the semiconductor substrate W and the alignment mark MK on the template 1 are observed from above the template 1, and the horizontal relative position of the semiconductor substrate W and the template 1 is adjusted so that these alignment marks MKw and MK overlap in the vertical direction.

[0045] In this manner, the alignment of the semiconductor substrate W and the template 1, performed using alignment marks MKw and MK while the resist layer 71 of the semiconductor substrate W and the template 1 are in a non-contact state, is also called rough alignment.

[0046] As shown in Figure 2(c), the pattern 21 of the template 1 is pressed onto the resist layer 71 on the semiconductor substrate W.

[0047] At this time, helium gas or carbon dioxide gas is injected between the semiconductor substrate W and the template 1, and the counterbore 13 provided on the back surface of the template 1 is pressed, bringing the pattern 21 of the template 1 into contact with the resist layer 71. As a result, air between the semiconductor substrate W and the template 1 is removed by the helium gas, and the pattern 21 of the template 1 comes into contact with the resist layer 71 sequentially and in stages, from near the horizontal center to the outer edge.

[0048] Therefore, when the resist layer 71 comes into contact with the resist layer, it is possible to suppress the retention of air within the pattern 21 of the template 1 and to make the resist layer 71 adhere more closely to the irregularities of the pattern 21 of the template 1. When air remaining within the pattern 21 of the template 1 comes into contact with the resist layer 71, it can become mixed into the resist layer 71 and cause problems such as poor transfer of the pattern 21, which is also called air bubble trapping.

[0049] Furthermore, a gap is provided between the semiconductor substrate W and the template 1 to prevent the template 1 from directly contacting the semiconductor substrate W and damaging it.

[0050] Furthermore, alignment marks (not shown) provided on the semiconductor substrate W and template 1 are used to more precisely align the semiconductor substrate W and template 1. In this case, alignment marks having a two-dimensional periodic structure with different periods can be used on the semiconductor substrate W and template 1. When such alignment marks are superimposed in the vertical direction, interference fringes called moiré patterns are observed. Based on the appearance of these interference fringes, the semiconductor substrate W and template 1 can be more precisely aligned.

[0051] This more precise alignment of the semiconductor substrate W and the template 1, performed while the resist layer 71 of the semiconductor substrate W and the template 1 are in contact, is also called fine alignment.

[0052] During fine alignment, template 1 is slid horizontally while in contact with the resist layer 71. Also, since size errors and distortions may occur in the pattern 21 when the resin layer 20 is formed, when template 1 is pressed, the template 1 is pressed from the side to correct the size and distortion of the pattern 21. In this way, shear stress is generated between the resin layer 20 and the mesa portion 11 of template 1 due to the sliding motion during fine alignment and the correction of the pattern 21.

[0053] However, the resin layer 20 and the mesa portion 11 each have anchor patterns 22 and 12. Therefore, these anchor patterns 22 and 12 suppress the peeling of the resin layer 20 from the mesa portion 11.

[0054] Once the fine alignment between the semiconductor substrate W and the template 1 is complete, the position of the template 1 relative to the semiconductor substrate W is fixed, and the resist layer 71 is cured by irradiating the template 1 with ultraviolet light or the like from above.

[0055] As shown in Figure 2(d), after the resist layer 71 is cured, the template 1 is raised to release the pattern 21 of the template 1 from the resist layer 71. This forms a resist pattern 71p in which the pattern 21 of the template 1 is transferred to the resist layer 71.

[0056] Furthermore, when template 1 is brought into contact with the resist layer 71, the gap between it and the semiconductor substrate W causes the bottom of the resist pattern 71p to be connected to each other by the thin layer 71r of the resist layer 71.

[0057] This concludes the imprint method using template 1 of Embodiment 1.

[0058] Figure 3 is a cross-sectional view illustrating a part of the procedure for forming a pattern on a semiconductor substrate W according to Embodiment 1.

[0059] As shown in Figure 3(a), the thin layer 71r at the bottom of the resist pattern 71p is removed.

[0060] As shown in Figure 3(b), the semiconductor substrate W is etched using the resist pattern 71p as a mask. This forms the desired pattern Wp on the semiconductor substrate W.

[0061] In this case, of the pattern 21 that the resin layer 20 initially had and the recess 24 corresponding to the alignment mark MK, only the portion derived from the pattern 21 may be transferred to the semiconductor substrate W. This is because, when the recess 24 of the resin layer 20 is transferred to the resist pattern 71p, the portion derived from the recess 24 of the resin layer 20 in the resist pattern 71p is positioned to coincide vertically with the convex portion of the alignment mark MKw on the semiconductor substrate W.

[0062] As mentioned above, when a workpiece layer is provided on the upper surface of a semiconductor substrate W or the like, the pattern 21 of template 1 will be transferred to the workpiece layer.

[0063] Next, resist pattern 71p is removed by ashing.

[0064] This concludes the pattern formation method of Embodiment 1.

[0065] From this point onward, semiconductor devices are manufactured through processes such as film deposition, imprinting, lithography, and etching on the semiconductor substrate W.

[0066] (Method of manufacturing a template) Next, the manufacturing method of the template 1 of Embodiment 1 will be described with reference to Figures 4 to 7. The manufacturing method of the template 1 includes a manufacturing method of the template mold 100 for forming a resin layer 20 on the quartz substrate 10 of the template 1.

[0067] Figures 4 and 5 are cross-sectional views illustrating, in sequence, a part of the procedure for manufacturing the template mold 100 according to Embodiment 1.

[0068] As shown in Figure 4(a), a substrate 101 of template type 100 and a master template M1 for processing substrate 101 are prepared.

[0069] The substrate 101 is a semiconductor substrate, such as a silicon substrate. A recess 102 is provided in the center of the upper surface of the substrate 101.

[0070] The master template M1 has a pattern Mp and a recess MKm on one surface of a quartz substrate. The shape of pattern Mp corresponds to the pattern 21 of template 1 described above. The recess MKm is the part that becomes the alignment mark MKt (see Figure 5(d), etc.) of the template mold 100 used when forming the resin layer 20 on the quartz substrate 10 of template 1. The pattern Mp and recess MKm of the master template M1 are formed, for example, by electron beam lithography.

[0071] In addition to the recess MKm for forming the alignment marks MKt of the template type 100, the master template M1 may also be provided with alignment marks with a metal layer, such as a chrome layer (not shown), for alignment adjustment, used for aligning the master template M1 with the substrate 101.

[0072] A resist layer 72 is formed to cover the upper surface of the substrate 101, and the master template M1 is placed opposite it.

[0073] As shown in Figure 4(b), the pattern Mp of the master template M1 is pressed against the resist layer 72, and ultraviolet light or the like is irradiated from above the master template M1 to cure the resist layer 72.

[0074] As shown in Figure 5(a), the master template M1 is released from the resist layer 72. This forms a resist pattern 72p having a thin layer 72r at the bottom.

[0075] As shown in Figure 5(b), the thin layer 72r of the resist pattern 72p is removed.

[0076] As shown in Figure 5(c), the substrate 101 is etched using the resist pattern 72p as a mask. This forms a predetermined pattern 103 and alignment marks MKt within the recesses 102 of the substrate 101. The alignment marks MKt are composed of a convex portion which is the inverse shape of the recess MKm of the master template M1.

[0077] As shown in Figure 5(d), the resist pattern 72p is removed by ashing.

[0078] Based on the above, the template mold 100 of Embodiment 1 is manufactured.

[0079] Figures 6 and 7 are cross-sectional views illustrating, in order, a part of the procedure for manufacturing the template 1 according to Embodiment 1.

[0080] As shown in Figure 6(a), the quartz substrate 10 of the template 1 described above is prepared. The quartz substrate 10 is provided with a mesa portion 11 and a counterbore 13, and the mesa portion 11 is provided with an anchor pattern 12, an alignment mark MK, and alignment marks and inspection marks (not shown).

[0081] The mesa portion 11 and counterbore 13 of the quartz substrate 10 are formed, for example, by machining. The anchor pattern 12 of the quartz substrate 10 and the recess 14 of the alignment mark MK are formed, for example, by imprint processing using a master template on which the corresponding pattern is formed by electronic drawing. Note that the alignment mark MK, alignment marks not shown, and inspection marks can also be formed by imprint processing without electronic drawing, or by laser processing, etc. The metal layer 15 of the alignment mark MK is formed, for example, by sputtering.

[0082] As shown in Figure 6(b), a protective layer 41 and an adhesive layer 51 are also formed on the quartz substrate 10. The protective layer 41 is formed using, for example, atomic layer deposition (ALD). When using ALD, the protective layer 41 is formed continuously over the entire surface of the quartz substrate 10, including the side surfaces, the surface where the mesa portion 11 is provided, the side surfaces of the mesa portion 11, and the protruding surfaces of the mesa portion 11. The adhesive layer 51 is formed, as described above, for example, by spin coating of an SOC layer. When using spin coating, the adhesive layer 51 is formed continuously over the entire surface of the quartz substrate 10 except for the side surfaces.

[0083] As shown in Figure 6(a), the quartz substrate 10 described above is placed opposite a template mold 100 in which a resin layer 20m is formed within a recess 102. The resin layer 20m is made of the material for the resin layer 20 that the template 1 will have, such as a silicon-containing resin layer, an acrylic resin layer, or a urethane resin layer, i.e., uncured resin. As described above, the provision of the recess 102 in the substrate 101 shown in Figure 4(a) facilitates the subsequent placement of the resin layer 20m on the template mold 100 and the adjustment of its position. However, the substrate 101 does not necessarily have to have a recess 102.

[0084] At this time, the alignment marks MK on the quartz substrate 10 and the alignment marks MKt on the template mold 100 are used to align the quartz substrate 10 and the template mold 100.

[0085] As shown in Figure 6(c), the mesa portion 11 of the quartz substrate 10 is pressed against the resin layer 20m of the template mold 100, and fine alignment is performed using alignment marks (not shown) that create a moiré pattern. Then, the entire structure is heated, or in the case of photocurable resins, ultraviolet light is irradiated to cure the resin layer 20m.

[0086] As shown in Figure 7(a), when the quartz substrate 10 is raised, it is heat-cured or photo-cured, and the resin layer 20 bonded to the mesa portion 11 by the adhesive layer 51 is pulled up together with the quartz substrate 10 and released from the template mold 100.

[0087] As shown in Figures 7(b) and 7(c), a protective layer 61 covering the pattern 21 of the resin layer 20 bonded to the quartz substrate 10 is formed, for example, by the ALD method. When the ALD method is used, the protective layer 61 is formed continuously over the entire surface of the quartz substrate 10, the surface where the mesa portion 11 is provided, the side surface of the mesa portion 11, the side surface of the resin layer 20, and the surface of the resin layer 20 where the pattern 21 is provided.

[0088] Based on the above, template 1 of embodiment 1 is manufactured.

[0089] (How to play the template) When the template 1 of Embodiment 1 is used repeatedly in the imprinting process, the pattern 21 and other elements of the resin layer 20 will wear down. In such cases, the template 1 of Embodiment 1 is configured to be reusable by replacing the resin layer 20.

[0090] The method for reproducing template 1 in Embodiment 1 will be described below with reference to Figure 8. Figure 8 is a cross-sectional view illustrating a part of the procedure for reproducing template 1 according to Embodiment 1.

[0091] As shown in Figure 8, the protective layer 61 is removed by polishing the side of the quartz substrate 10 of template 1 on which the mesa portion 11 is provided using a polishing pad PD or the like, or by using dry etching or the like. This exposes the adhesive layer 51 (see Figure 1(b), etc.) on the surface of the quartz substrate 10. It is preferable that the protective layer 61 be removed not only from the side of the quartz substrate 10 on which the mesa portion 11 is provided, but also from the side surfaces of the quartz substrate 10.

[0092] The protective layer 61 is a silicon oxide layer similar to that of the quartz substrate 10, but the quartz substrate 10 is covered by the protective layer 41 (see Figure 1(b), etc.). Therefore, when removing the protective layer 61, damage to the quartz substrate 10 can be suppressed.

[0093] Subsequently, the adhesive layer 51 is removed by ashing or by dissolving it using a solvent. This causes the resin layer 20 to peel off from the quartz substrate 10. At this time, the surface of the quartz substrate 10 is again protected by the protective layer 41.

[0094] Subsequently, the protective layer 41 on the surface of the quartz substrate 10 is removed as needed. The protective layer 41 in the recesses 14 of the anchor pattern 12 and alignment marks MK on the quartz substrate 10 can be removed, for example, by dissolving it with a solvent. The protective layer 41 on the side and sides of the quartz substrate 10 where the mesa portion 11 is provided may be removed, for example, by polishing.

[0095] This results in a quartz substrate 10 from which the resin layer 20, protective layers 41 and 61, and adhesive layer 51 have all been removed. It is preferable that the metal layer 15 provided in the recess 14 of the alignment mark MK is not removed. The protective layer 41 may also be left in place without being removed.

[0096] Subsequently, by performing the processes shown in Figures 6 and 7 above using the quartz substrate 10, a new resin layer 20 is bonded to the quartz substrate 10, and the template 1 is regenerated.

[0097] With the above steps, the playback process of template 1 of embodiment 1 is completed.

[0098] (Overview) In the manufacturing process of semiconductor devices, imprint processing using templates is sometimes performed. Since templates are used repeatedly for imprint processing, the template patterns wear down. Therefore, attempts have been made to make templates reusable by forming the template patterns on a replaceable resin layer. A protective layer, such as a silicon oxide layer, is provided on the resin layer pattern to increase its strength and suppress pattern wear.

[0099] However, during the template reprocessing process, the resin layer on which the protective layer is formed is difficult to peel off from the quartz substrate of the template, which is a drawback.

[0100] Furthermore, alignment marks, including a metal layer, are formed on the template for alignment with semiconductor substrates, etc. However, in templates with a resin layer, it may be difficult to form a metal layer on the surface of the resin layer depending on the type of resin. Moreover, not limited to templates with a resin layer, the alignment marks on the template may interfere with the alignment marks used for fine alignment, making it difficult to observe the interference fringes generated by the alignment marks.

[0101] According to the template 1 of Embodiment 1, a protective layer 61 is provided to cover the surface of the resin layer 20 having the pattern 21. This increases the strength of the pattern 21 and suppresses wear of the pattern 21.

[0102] According to the template 1 of Embodiment 1, a resin layer 20 is bonded to a protective layer 41 covering a quartz substrate 10 by an adhesive layer 51, and has a pattern 21 on the side opposite to the bonding surface with the protective layer 41. As described above, even if the resin layer 20 has a protective layer 61 formed on it, by bonding the resin layer 20 to the quartz substrate 10 with the adhesive layer 51 in this way, the resin layer 20 can be easily peeled off during the regeneration process of the template 1. Furthermore, when the adhesive layer 51 is removed and the resin layer 20 is peeled off during the regeneration process of the template 1, the protective layer 41 covering the quartz substrate 10 can protect the surface of the quartz substrate 10.

[0103] Furthermore, in recent years, semiconductor devices manufactured using imprint processing and other methods have seen an increase in small-batch, high-mix production. As described above, since template 1 has a structure in which a pattern 21 is provided on an easily replaceable resin layer 20, it becomes possible to easily change the pattern formed by imprint processing in order to accommodate the increasing small-batch, high-mix production of semiconductor devices.

[0104] According to the template 1 of Embodiment 1, an alignment mark MK having a metal layer 15 is provided on a quartz substrate 10. By forming the metal layer 15 on the quartz substrate 10 instead of the resin layer 20, the formation of the metal layer 15 becomes easier.

[0105] Furthermore, since the metal layer 15 is interposed between the quartz substrate 10 and the resin layer 20, unlike the case where the metal layer 15 is formed on the surface of the resin layer 20, the alignment mark MK is not transferred to the semiconductor substrate W. Therefore, the design freedom of the alignment mark MK is increased, and it becomes possible to select the size and shape of the alignment mark MK so as to suppress interference with the alignment mark that causes moiré patterns used during fine alignment.

[0106] According to template 1 of Embodiment 1, the quartz substrate 10 and the resin layer 20 each have anchor patterns 12 and 22 on their bonding surfaces, which include interlocking recesses and protrusions. As described above, shear stress is generated between the quartz substrate 10 and the resin layer 20 during the fine alignment and pattern 21 correction performed during the imprint process. As described above, by providing anchor patterns 12 and 22, even if the resin layer 20 is formed on the quartz substrate 10 by adhesion, for example, the bonding strength between the resin layer 20 and the quartz substrate 10 can be sufficiently increased, and peeling of the resin layer 20 during use of template 1 can be suppressed.

[0107] According to template 1 of Embodiment 1, the recesses of anchor patterns 12b and 22c have a tapered shape that narrows from the bottom surface of the recess towards the open end of the recess, and the protrusions of anchor patterns 12c and 22b have a tapered shape that widens from the base of the protrusion towards the upper end of the protrusion. As a result, these anchor patterns 12b and 22b, or anchor patterns 12c and 22c, can be combined in a wedge shape to further increase the adhesive strength between the resin layer 20 and the quartz substrate 10.

[0108] According to template 1 of Embodiment 1, the adhesive layer 51 continuously covers the adhesive surface of the mesa portion 11, the side surface of the mesa portion 11, and one surface of the quartz substrate 10. Such an adhesive layer 51 is formed, for example, by spin coating. In this way, the adhesive layer 51 can be easily formed by using spin coating.

[0109] (Variation 1) Next, using Figure 9, we will describe template 2 of modified example 1 of Embodiment 1. In template 2 of modified example 1, the shape of the protective layer 62 is different from that of Embodiment 1 described above.

[0110] Figure 9 is a schematic diagram showing an example of the configuration of template 2 according to modification 1 of Embodiment 1. More specifically, Figure 9(a) is a cross-sectional view showing the entire template 2, and Figure 9(b) is an enlarged cross-sectional view of a part of template 2.

[0111] In Figure 9, components similar to those in Embodiment 1 described above are denoted by the same reference numerals, and their descriptions may be omitted.

[0112] As shown in Figure 9, the template 2 of the modified example 1 has a protective layer 62 that covers only the resin layer 20. That is, the protective layer 62 continuously covers the surface and sides of the resin layer 20 that have the pattern 21. However, unlike the embodiment 1 described above, the adhesive layer 51, which is placed via the protective layer 41, is exposed on the side of the mesa portion 11 and on the mesa portion 11 side of the quartz substrate 10, and the protective layer 41 that directly covers the side of the quartz substrate 10 is exposed on the side of the quartz substrate 10.

[0113] Such a protective layer 62 can be formed using a resin layer 20 made of a silicon-containing resin. Specifically, the silicon contained in the resin layer 20, up to a predetermined depth from the surface of the resin layer 20, is oxidized. As a result, a protective layer 62, such as a silicon oxide layer, is formed on the surface of the resin layer 20.

[0114] Alternatively, instead of oxidizing the silicon contained in the resin layer 20, it is also possible to remove components other than silicon from the surface of the resin layer 20 and form a protective layer 62 containing a large amount of silicon on the surface.

[0115] In the regeneration process of template 2 in modified example 1, the adhesive layer 51 exposed on the surface of the quartz substrate 10 can be removed by ashing or dissolution without removing the protective layer 62.

[0116] According to the template 2 of the modified example 1, during the manufacturing or reprocessing of the template 2, the formation of the protective layer 62 includes oxidizing the silicon from the surface of the resin layer 20, which is a silicon-containing resin layer, to a predetermined depth. Alternatively, it includes removing components other than silicon from the surface of the resin layer 20. This achieves the same effect as the template 1 of Embodiment 1.

[0117] (Modification 2) Next, the template 3 of modified embodiment 1, part 2, will be described using Figures 10 to 13. The template 3 of modified embodiment 2 differs from the above-described embodiment 1 in that it includes two types of resin layers 20 and 30.

[0118] In the following drawings, components similar to those in Embodiment 1 described above are denoted by the same reference numerals, and their descriptions may be omitted.

[0119] Figure 10 is a schematic diagram showing an example of the configuration of template 3 according to modification 2 of Embodiment 1. More specifically, Figure 10(a) is a cross-sectional view showing the entire template 3, and Figure 10(b) is an enlarged cross-sectional view of a part of template 3.

[0120] As shown in Figure 10(a), the template 3 of the modified example 2 has a resin layer 30 between the resin layer 20 and the quartz substrate 10. The resin layer 30 is a layer with higher gas permeability than the resin layer 20, such as an SOC layer or a porous resin layer.

[0121] Furthermore, the resin layer 30 has an anchor pattern 32a on the side facing the quartz substrate 10 that engages with the anchor pattern 12 of the quartz substrate 10, and an anchor pattern 32b on the side facing the resin layer 20 that engages with the anchor pattern 22 of the resin layer 20. These anchor patterns 32a and 32b can also have any of the various shapes shown in Figures 1(c) to 1(f) of the above-described embodiment 1, such as vertical recesses or protrusions, or tapered recesses or protrusions.

[0122] As shown in Figure 10(b), in the template 2 of the modified example 3, a protective layer 41 and an adhesive layer 51 are provided in this order between the resin layer 30 and the quartz substrate 10.

[0123] However, if the resin layer 30 is made of the same material as the adhesive layer 51, such as the SOC layer, the template 2 does not need to have the adhesive layer 51. In this case, the interface between the resin layer 30 and the mesa portion 11 functions as the adhesive layer 51. When regenerating the template 2, the resin layers 20 and 30 can be peeled off from the quartz substrate 10 all at once by removing the interface portion between the resin layer 30 and the mesa portion 11 by ashing or dissolution.

[0124] As described above, because template 2 has a resin layer 30 with high gas permeability, the occurrence of bubbles between template 3 and the resist layer on the semiconductor substrate can be further reduced during imprint processing using template 2.

[0125] Figure 11 is a cross-sectional view illustrating a part of the procedure for an imprinting method using template 3 according to a modified example 2 of Embodiment 1.

[0126] As shown in Figure 11, when pressing the template 3 against the resist layer 71 on the semiconductor substrate W, in order to suppress air bubbles from getting trapped, helium gas or the like is sprayed between the template 3 and the semiconductor substrate W, as described above, and the recessed portion 13 is pressed from the back of the template 3, so that the pattern 21 of the template 3 contacts the resist layer 71 on the semiconductor substrate W sequentially from near the horizontal center.

[0127] However, even with the above measures, air or gases such as helium may remain in the irregularities of the pattern 21 of template 3. In the template 2 of modified example 3, there is a resin layer 30 with high gas permeability, so such gases G are discharged to the outside from between template 3 and semiconductor substrate W through the resin layer 30.

[0128] The template 3 of the modified example 2 described above is manufactured by using a template mold 110 having the pattern of the resin layer 30 of the modified example 2, in addition to the template mold 100 of the embodiment 1 described above, through the process shown in Figures 12 to 15.

[0129] Figure 12 is a cross-sectional view showing an example of the configuration of a template mold 110 used in the manufacture of template 3 according to a modified example 2 of Embodiment 1.

[0130] As shown in Figure 12, the template mold 110 has a substantially flat substrate 111. The substrate 111 has a recess 112 in the horizontal center of its upper surface. A pattern 113 corresponding to the anchor pattern 32b of the resin layer 30 is provided within the recess 112 of the substrate 111.

[0131] Such a template type 110 can be manufactured using a master template or the like, which has a pattern formed on it that corresponds to the pattern that the template type 110 has in the recess 112, similar to the template type 100 of Embodiment 1 described above.

[0132] Figures 13 to 15 are cross-sectional views illustrating, in order, a part of the procedure for manufacturing the template 3 according to a modified example 2 of Embodiment 1.

[0133] As shown in Figure 13(a), an uncured resin layer 30m is formed in the recess 112 of the template mold 110 described above.

[0134] Furthermore, a quartz substrate 10, which has an anchor pattern 12, an alignment mark MK with a metal layer 15 in the recess 14, a protective layer 41, and an adhesive layer 51 formed on it, is placed opposite a template mold 110, which has an uncured resin layer 30m formed on it that covers the inside of the recess 112.

[0135] As shown in Figure 13(b), the mesa portion 11 of the quartz substrate 10 is pressed against the resin layer 30m of the template mold 110, and the resin layer 30m is cured by heating the entire surface or by irradiating it with ultraviolet light or the like.

[0136] Furthermore, since the resin layer 30 is a resin layer with high gas permeability, another advantage is obtained in that the formation of air bubbles between the resin layer 30 and the quartz substrate 10 is suppressed.

[0137] As shown in Figure 14(a), when the quartz substrate 10 is raised, it is heat-cured or photo-cured, and the resin layer 30 bonded to the mesa portion 11 by the adhesive layer 51 is pulled up together with the quartz substrate 10 and released from the template mold 110.

[0138] As a result, a resin layer 30 is formed in a state where it is bonded to the quartz substrate 10, having an anchor pattern 32b on the surface released from the template mold 110 and an anchor pattern 32a on the bonding surface with the quartz substrate 10 that engages with the anchor pattern 12 of the quartz substrate 10.

[0139] As shown in Figure 14(b), the quartz substrate 10 on which the resin layer 30 is formed is placed opposite the template mold 100 on which an uncured resin layer 20m is formed in the recess 102.

[0140] At this time, the alignment marks MK on the quartz substrate 10 and the alignment marks MKt on the template mold 100 are used to align the quartz substrate 10 and the template mold 100.

[0141] As shown in Figure 14(c), the resin layer 30 of the quartz substrate 10 is pressed against the resin layer 20m of the template mold 100, and fine alignment is performed using alignment marks (not shown) that create a moiré pattern. Then, the entire structure is heated or irradiated with ultraviolet light to cure the resin layer 20m.

[0142] Furthermore, since the resin layer 30 is a resin layer with high gas permeability, another advantage is obtained in that air bubbles are suppressed between the resin layer 30 and the resin layer 20.

[0143] As shown in Figure 15, when the quartz substrate 10 is raised, it is heat-cured or photo-cured, and the resin layer 20 bonded to the resin layer 30 is pulled up together with the quartz substrate 10 and released from the template mold 100.

[0144] As described above, in the template 3 which includes a highly gas-permeable resin layer 30, it is possible to suppress bubble trapping in the laminated structure of the resin layers 20, 30 and the quartz substrate 10 not only during the imprint process on the semiconductor substrate W using the template 3, but also during manufacturing.

[0145] Subsequently, a protective layer 61 covering the pattern 21 of the resin layer 20 and the quartz substrate 10, etc., is formed, for example, by the ALD method. However, a silicon-containing resin may be used for the resin layer 20, and the silicon on the surface of the resin layer 20 may be oxidized, or components other than silicon on the surface may be removed, to form the protective layer 62 of the modified example 1 described above on the pattern 21 forming surface of the resin layer 20.

[0146] Based on the above, template 3 of modification 2 is manufactured.

[0147] According to the template 3 of the modified example 2, it has a resin layer 20 having a pattern and a resin layer 30 interposed between the resin layer 20 and the quartz substrate 10, having an adhesive surface with the quartz substrate 10, and having higher gas permeability than the resin layer 20. This makes it possible to further suppress air bubbles during the imprinting process.

[0148] According to the template 3 of the modified example 2, the same effects as those of template 1 of embodiment 1 described above are achieved.

[0149] In the modified example 2 described above, template 3 was manufactured using two types of template molds 110 and 100. However, template 3 having a highly gas-permeable resin layer 30 may be manufactured using only template mold 100. In this case, template mold 100 can also be used when forming the resin layer 30 in the process shown in Figures 13(a) to 14(a) above.

[0150] However, in this case, the anchor pattern 32b of the resin layer 30 on the side of the resin layer 20 will have the same pattern as the surface of the resin layer 20 that comes into contact with the semiconductor substrate W during the imprint process. That is, the anchor pattern 32b of the resin layer 30 will have a pattern corresponding to the transfer pattern 21 of the resin layer 20 and the recess 24 formed due to the alignment mark MKt of the template mold 100.

[0151] Subsequently, by performing the processing described in Figure 14(b) and subsequent steps, template 3 is manufactured using only template mold 100. In this case, the anchor pattern 22 of the resin layer 20 also corresponds to the anchor pattern 32b of the resin layer 30, and the resin layer 20 itself has a pattern with inverted irregularities compared to the pattern 21 and recesses 24 on the contact surface with the semiconductor substrate W.

[0152] (Variation 3) Next, we will describe the template 4 of modified example 3 of Embodiment 1 using Figures 16 to 19. In the template 4 of modified example 3, the placement of the alignment marks MKg is different from that of modified example 2 described above.

[0153] In the following drawings, components similar to those in the modified example 2 described above are denoted by the same reference numerals, and their descriptions may be omitted.

[0154] Figure 16 is a schematic diagram showing an example of the configuration of template 4 according to modification 3 of Embodiment 1. More specifically, Figure 16(a) is a cross-sectional view showing the entire template 4, and Figure 16(b) is an enlarged cross-sectional view of a part of template 4.

[0155] As shown in Figure 16(a), the template 4 of the modified example 3 comprises a quartz substrate 10a, a resin layer 30a, and a resin layer 20, etc.

[0156] Unlike the quartz substrate 10 of the modified example 2 described above, the quartz substrate 10a does not have alignment marks MK. In the region where the alignment marks MK were located in the quartz substrate 10 of the modified example 2 described above, the quartz substrate 10a has, for example, a flat surface.

[0157] In addition to the components of the resin layer 30 in the above-described modified example 2, the resin layer 30a has an alignment mark MKg. The alignment mark MKg has a recess 34 provided on the bonding surface of the resin layer 30a with the resin layer 20, and a metal layer 35 such as a chromium layer provided on the bottom surface of the recess 34. In the above-described modified example 2, the recess 24 of the resin layer 20 was positioned to overlap the alignment mark MK of the quartz substrate 10 in the vertical direction, but in the template 4 of modified example 3, it is positioned to overlap the alignment mark MKg of the resin layer 30a in the vertical direction.

[0158] As shown in Figure 16(a), similar to the modified example 2 described above, the resin layer 30a and the resin layer 20 are directly bonded together. Therefore, the resin layer 20 fills the recess 34 of the alignment mark MKg in the resin layer 30a. The resin layer 20 within the recess 34 is in contact with the side surface of the recess 34 and the surface of the metal layer 35 located on the bottom surface of the recess 34.

[0159] The template 4 of the modified example 3 described above is manufactured by using a template mold 110a having the pattern of the resin layer 30a of the modified example 3, in addition to the template mold 100 of the embodiment 1 described above, and by the process shown in Figures 17 to 19.

[0160] Figure 17 is a cross-sectional view showing an example of the configuration of a template mold 110a used in the manufacture of template 4 according to Modification 3 of Embodiment 1.

[0161] As shown in Figure 17, the template mold 110a has a substantially flat substrate 111a. The substrate 111a has a recess 112 in the horizontal center of its upper surface. Within the recess 112 of the substrate 111a, there is a pattern 113 corresponding to the anchor pattern 32b of the resin layer 30a and a protrusion 114 corresponding to the alignment mark MKg. In addition, a metal layer 35, such as a chromium layer, is provided on the upper surface of the protrusion 114 of the substrate 111a.

[0162] Such a template mold 110a can be manufactured using a master template or the like, which has a pattern formed on it that corresponds to the pattern that the template mold 110a has in the recess 112, similar to the template mold 110 of the modified example 2 described above. The metal layer 35 on the upper surface of the protrusion 114 is obtained by forming a mask pattern or the like having an opening on the upper surface of the protrusion 114 on the upper surface of the substrate 111a, and then forming a chromium layer or the like by sputtering.

[0163] Figures 18 and 19 are cross-sectional views illustrating, in sequence, a part of the procedure for manufacturing the template 4 according to modified example 3 of Embodiment 1.

[0164] As shown in Figure 18(a), an uncured resin layer 30m is formed in the recess 112 of the template mold 110a, which includes the pattern 113, the protrusion 114, and the metal layer 35.

[0165] Furthermore, the quartz substrate 10a, on which the anchor pattern 12, protective layer 41, and adhesive layer 51 are formed, is placed opposite the template mold 110a, on which an uncured resin layer 30m covering the inside of the recess 112 is formed.

[0166] As shown in Figure 18(b), the mesa portion 11 of the quartz substrate 10a is pressed against the resin layer 30m of the template mold 110a, and the resin layer 30m is cured by heating the entire surface or by irradiating it with ultraviolet light or the like.

[0167] As shown in Figure 18(c), when the quartz substrate 10a is raised, it is heat-cured or photo-cured, and the resin layer 30a, which is bonded to the mesa portion 11 by the adhesive layer 51, is pulled up together with the quartz substrate 10a, with the metal layer 35 that was formed on the template mold 110a attached to it, and is released from the template mold 110a.

[0168] As a result, a resin layer 30a is formed on the surface released from the template mold 110a, having an anchor pattern 32b and an alignment mark MKg having a recess 34 and a metal layer 35, and having an anchor pattern 32a that interlocks with the anchor pattern 12 of the quartz substrate 10a on the bonding surface with the quartz substrate 10a, and is bonded to the quartz substrate 10a.

[0169] As shown in Figure 19(a), a quartz substrate 10a on which a resin layer 30a is formed is placed opposite a template mold 100 on which an uncured resin layer 20m is formed in the recess 102.

[0170] At this time, the alignment marks MKg on the resin layer 30a and the alignment marks MKt on the template mold 100 are used to align the quartz substrate 10a with the template mold 100.

[0171] As shown in Figure 19(b), the resin layer 30a of the quartz substrate 10a is pressed against the resin layer 20m of the template mold 100, and fine alignment is performed using alignment marks (not shown) that create a moiré pattern. Then, the entire structure is heated or irradiated with ultraviolet light to cure the resin layer 20m.

[0172] As shown in Figure 19(c), when the quartz substrate 10a is raised, it is heat-cured or photo-cured, and the resin layer 20 bonded to the resin layer 30a is pulled up together with the quartz substrate 10a and released from the template mold 100.

[0173] Subsequently, a protective layer 61 covering the pattern 21 of the resin layer 20 and the quartz substrate 10a, etc., is formed, for example, by the ALD method. However, a silicon-containing resin may be used for the resin layer 20, and the silicon on the surface of the resin layer 20 may be oxidized, or components other than silicon on the surface may be removed, to form the protective layer 62 of the modified example 1 described above on the pattern 21 forming surface of the resin layer 20.

[0174] Based on the above, template 4 of modification 3 is manufactured.

[0175] According to the template 4 of the modified example 3, an alignment mark MKg is provided, which is positioned so as not to overlap with the pattern 21 in the vertical direction, and has a metal layer 35 between the resin layer 20 and the resin layer 30a. Even with this configuration, the alignment mark MKg is not transferred to the semiconductor substrate W. Therefore, the design freedom of the alignment mark MKg is increased, and it becomes possible to select the size and shape of the alignment mark MKg so as to suppress interference with the alignment mark that causes moiré patterns used during fine alignment.

[0176] According to template 4 of variation 3, it also produces the same effects as variation 2 described above.

[0177] Furthermore, the template 4 of the above-described modified example 3 may also be manufactured using only the template type 100.

[0178] (Other variations) In the above-described embodiment 1 and variations 1 to 3, anchor patterns 12, 32a, 32b, 22, etc., are provided on the bonding surfaces of each layer, such as the quartz substrate 10, resin layer 30, and resin layer 20. However, anchor patterns 12, 32a, 32b, 22 are not necessarily required. Figure 20 below shows some examples of templates without anchor patterns.

[0179] Figure 20 is a schematic diagram showing an example of the configuration of templates 5 to 7, which are other modifications of Embodiment 1.

[0180] In the example shown in Figure 20(a), template 5 does not have anchor patterns 32b, 22 such as the modified example 2 described above between resin layer 30b and resin layer 20b, and the opposing surfaces of resin layer 30b and resin layer 20b are flat surfaces.

[0181] In the example shown in Figure 20(b), the template 6 does not have anchor patterns 12, 32a such as those in the modified example 3 described above between the quartz substrate 10b and the resin layer 30c, and the opposing surfaces of the quartz substrate 10b and the resin layer 30c are flat surfaces.

[0182] In the example shown in Figure 20(c), template 7 does not have anchor patterns 12, 32a, 32b, or 22 such as those in the modified example 2 described above, between the quartz substrate 10c and the resin layer 30d, or between the resin layer 30d and the resin layer 20b. The opposing surfaces of the quartz substrate 10c and the resin layer 30d, and the resin layer 30d and the resin layer 20b, are flat surfaces. In this case, the alignment mark MKd of the quartz substrate 10c has a metal layer 15 on the flat surface of the quartz substrate 10c. The metal layer 15 on the flat quartz substrate 10c is covered with a protective layer 41 and an adhesive layer 51.

[0183] In addition to the example in Figure 20, it is also possible to have a configuration in which, for example, the above-described embodiment 1 does not have anchor patterns 12 and 22 between the quartz substrate 10 and the resin layer 20.

[0184] [Embodiment 2] As mentioned above, in recent years, there has been a trend towards small-volume, high-mix production of semiconductor devices. For this reason, it is preferable that the pattern of the template mold 100 used in the manufacture of, for example, template 1 in Embodiment 1 described above can be easily changed.

[0185] Embodiment 2 will be described in detail below with reference to the drawings. Embodiment 2 describes a template type that allows for easy pattern modification.

[0186] (Template-type manufacturing method) To facilitate template-type pattern changes, for example, a silicon oxide layer with a pattern can be formed on the substrate. The silicon oxide layer is easier to process than the substrate, and by removing it from the substrate and forming a new silicon oxide layer, the pattern can be easily changed.

[0187] The manufacturing method for the template mold 200 of Embodiment 2 will be described below with reference to Figures 21 and 22.

[0188] Figures 21 and 22 are cross-sectional views illustrating, in sequence, a part of the procedure for manufacturing the template mold 200 according to Embodiment 2.

[0189] As shown in Figure 21(a), a flat substrate 121 is prepared. The substrate 121 has a configuration that is the same as the substrate 101 of the template type 100 of Embodiment 1 described above, but with the pattern 103 removed. That is, the substrate 121 has a recess 102 provided on the upper surface of the substrate 121 and an alignment mark MKt having a protrusion provided within the recess 102.

[0190] As shown in Figure 21(b), a pattern layer 201 is formed to cover the upper surface of the substrate 121. The pattern layer 201 is a silicon oxide layer, such as a TEOS (Tetra-Ethyl Ortho-Silicate) layer, and has a pattern formed on it that corresponds to the pattern that will be present in the template manufactured from the template mold 200.

[0191] As shown in Figure 21(c), a master template M3 is prepared. The master template M3 has a configuration that is the same as the master template M1 for manufacturing the template type 100 of Embodiment 1 described above, but with the recess MKm removed. That is, the quartz substrate of the master template M3 has a pattern Mp formed on it that corresponds to the pattern that the template manufactured from the template type 200 will have.

[0192] Here, since it is necessary to adjust the position of pattern Mp relative to alignment mark MKt, it is desirable that the master template M3 and the substrate 121 have alignment marks (not shown) in order to align the master template M3 and the substrate 121.

[0193] Furthermore, a resist layer 73 is formed on the substrate 121 described above, covering the upper surface of the pattern layer 201, and the master template M3 is placed opposite it.

[0194] As shown in Figure 21(d), the pattern Mp of the master template M3 is pressed against the resist layer 73, and ultraviolet light or the like is irradiated from above the master template M3 to cure the resist layer 73. At this time, the master template M3 and the substrate 121 are aligned.

[0195] As shown in Figure 22(a), the master template M3 is released from the resist layer 73. This forms a resist pattern 73p having a thin layer 73r at the bottom.

[0196] As shown in Figure 22(b), the thin layer 73r of the resist pattern 73p is removed.

[0197] As shown in Figure 22(c), the pattern layer 201 is etched using the resist pattern 73p as a mask. This forms a predetermined pattern 203 on the pattern layer 201. In the region where the pattern layer 201 overlaps with the alignment mark MKt of the substrate 121, the pattern layer 201 has a flat surface.

[0198] As shown in Figure 22(d), the resist pattern 73p is removed by ashing.

[0199] Based on the above, the template mold 200 of Embodiment 2 is manufactured.

[0200] By having the above configuration, the template type 200 of Embodiment 2 is configured such that, for example, when performing a regeneration process due to wear of the pattern layer 201, or when changing the pattern 203 of the pattern layer 201, the pattern layer 201 can be temporarily removed by dry etching or wet etching, and a new pattern layer 201 having a new pattern 203 can be formed.

[0201] (Method of manufacturing a template) Next, a method for manufacturing a template using the template mold 200 of Embodiment 2 will be described with reference to Figure 23. From the above-mentioned template mold 200, for example, a template corresponding to template 1 of Embodiment 1 described above can be manufactured.

[0202] Figure 23 is a cross-sectional view illustrating, in sequence, some of the steps in the method for manufacturing a template according to Embodiment 2.

[0203] As shown in Figure 23(a), a quartz substrate 10 is prepared in the same manner as the manufacturing method of the template 1 in Embodiment 1 described above. Specifically, the quartz substrate 10 is provided with a mesa portion 11 and a counterbore 13, and the mesa portion 11 is provided with an anchor pattern 12 and an alignment mark MK. Furthermore, the quartz substrate 10 has a protective layer 41 and an adhesive layer 51.

[0204] The quartz substrate 10 is placed opposite a template mold 200 on which a resin layer 20m covering the upper surface of the pattern layer 201 is formed. At this time, the alignment marks MK on the quartz substrate 10 and the alignment marks MKt provided on the substrate 121 of the template mold 200 are used to align the quartz substrate 10 and the template mold 200.

[0205] As shown in Figure 23(b), the mesa portion 11 of the quartz substrate 10 is pressed against the resin layer 20m of the template mold 200, and the resin layer 20m is cured by heating the entire surface or by irradiating it with ultraviolet light or the like.

[0206] As shown in Figure 23(c), when the quartz substrate 10 is raised, it is heat-cured or photo-cured, and the resin layer 20a, which is bonded to the mesa portion 11 by the adhesive layer 51, is pulled up together with the quartz substrate 10 and released from the template mold 200. The resin layer 20a has a shape that is the same as the resin layer 20 of the template 1 of the above-described embodiment 1, but without the recess 24.

[0207] In other words, the resin layer 20a has a pattern 21 on its surface that is transferred to a semiconductor substrate, and in the region that overlaps with the alignment mark MK in the vertical direction, it has a flat shape. Thus, a template manufactured from the template mold 200 has the advantage that the shape caused by the alignment mark MK is not formed on the surface of the resin layer 20a, that is, on the transfer surface to the semiconductor substrate.

[0208] Subsequently, a protective layer 61 covering the pattern 21 of the resin layer 20a and the quartz substrate 10, etc., is formed, for example, by the ALD method. However, a silicon-containing resin may be used for the resin layer 20a, and the silicon on the surface of the resin layer 20a may be oxidized, or components other than silicon on the surface may be removed, to form the protective layer 62 of the modified example 1 of Embodiment 1 described above on the pattern 21 forming surface of the resin layer 20a.

[0209] Based on the above, the template for Embodiment 2 is manufactured.

[0210] Furthermore, by using the methods of the modified embodiments 2 and 3 of Embodiment 1 described above, it is also possible to manufacture templates corresponding to the templates 3 and 4 described above, which are equipped with two types of resin layers 20 and 30, or resin layers 20 and 30a, using the template mold 200 of Embodiment 2.

[0211] (Overview) According to the template mold 200 of Embodiment 2, the template mold comprises a substrate 121 and a pattern layer 201 positioned above the substrate 121 and having a pattern 203 that is transferred to the resin layer 20a of the template to form a pattern 21. This allows for easy regeneration of the template mold 200 or modification of the pattern 203 by replacing the pattern layer 201. Furthermore, by using such a template mold 200, it is possible to manufacture a template that does not have a shape caused by alignment marks MK on the transfer surface of the resin layer 20a to the semiconductor substrate.

[0212] (modified version) Next, the modified template types 210 and 220 of Embodiment 2 will be described with reference to Figures 24 and 25. The modified template types 210 and 220 differ from Embodiment 2 in that, instead of placing alignment marks on the base portion of the template types 210 and 220, alignment marks are formed on a pattern layer such as the TEOS layer. Furthermore, in order to improve the visibility of the alignment marks provided on the TEOS layer, the modified template types 210 and 220 are provided with two types of pattern layers 211, 301 or pattern layers 221, 311.

[0213] In the following drawings, components similar to those in Embodiment 2 described above are denoted by the same reference numerals, and their descriptions may be omitted.

[0214] Figure 24 is a cross-sectional view illustrating, in sequence, a part of the procedure for manufacturing a template mold 210 according to a modified example of Embodiment 2.

[0215] As shown in Figure 24(a), instead of the substrate 121 of the template mold 200 of Embodiment 2 described above, a substrate 131 is prepared to serve as the base for the modified template mold 210. The substrate 131 has no recesses or alignment marks formed on it, and the substrate 131 has a substantially flat surface.

[0216] As shown in Figure 24(b), a pattern layer 211 such as a TEOS layer is formed to cover the upper surface of the substrate 131.

[0217] As shown in Figure 24(c), a pattern layer 301 is formed to cover the upper surface of the pattern layer 211. The pattern layer 301 is, for example, at least one of an amorphous silicon layer, a silicon nitride layer, or a metal layer, and is made of a different material from the pattern layer 211.

[0218] As shown in Figure 24(d), a resist layer 74 is formed to cover the upper surface of the pattern layer 301. A SOC layer or SOG layer may be provided between the resist layer 74 and the pattern layer 301.

[0219] As shown in Figure 24(e), in addition to the pattern Mp of the master template M3 of Embodiment 2 described above, a master template having recesses for forming alignment marks in the pattern layers 211 and 301 is pressed against the resist layer 74 of the substrate 131, and ultraviolet light is irradiated to cure the resist layer 74, forming a resist pattern 74p having a thin layer 74r at the bottom.

[0220] As shown in Figure 24(f), the thin layer 74r of the resist pattern 74p is removed, and the pattern layers 301 and 211 are etched using the resist pattern 74p as a mask. As a result, predetermined patterns 303 and 213 are formed on the pattern layers 301 and 211, respectively, and alignment marks MKr are formed on the pattern layers 301 and 211, respectively, which are processed to be convex.

[0221] As a result, a pattern layer 301 of a different type of layer is positioned at the upper end of the pattern 213 of the pattern layer 211, such as a silicon oxide layer, having a pattern 303 that overlaps vertically with the pattern 213 of the pattern layer 211.

[0222] As shown in Figure 24(g), the resist pattern 74p is removed by ashing.

[0223] Based on the above, a modified template type 210 is manufactured.

[0224] Furthermore, amorphous silicon layers, silicon nitride layers, or metal layers can also be formed at different locations within the silicon oxide layer.

[0225] Figure 25 is a cross-sectional view illustrating, in sequence, some of the steps of a method for manufacturing another template mold 220 according to a modification of Embodiment 2.

[0226] As shown in Figure 25(a), instead of the substrate 121 of the template type 200 of Embodiment 2 described above, a substrate 131 is prepared to serve as the base for the modified template type 210.

[0227] As shown in Figure 25(b), a pattern layer 221 such as a TEOS layer is formed to cover the upper surface of the substrate 131. However, the formation of the pattern layer 221 is temporarily stopped, and a pattern layer 311 is formed to cover the upper surface of the pattern layer 221, which is at least one of an amorphous silicon layer, a silicon nitride layer, or a metal layer.

[0228] As shown in Figure 25(c), the pattern layer 211 is continuously formed so as to cover the upper surface of the pattern layer 311.

[0229] As a result, a pattern layer 311 made of a different material is interposed within a pattern layer 221 made of, for example, a silicon oxide layer.

[0230] As shown in Figure 25(d), a resist layer 75 is formed to cover the upper surface of the pattern layer 221 above the pattern layer 311. A SOC layer or SOG layer may be provided between the resist layer 75 and the pattern layer 311.

[0231] As shown in Figure 25(e), in addition to the pattern Mp of the master template M3 of Embodiment 2 described above, a master template having recesses for forming alignment marks in the pattern layers 211 and 301 is pressed against the resist layer 75 of the substrate 131, and ultraviolet light is irradiated to cure the resist layer 75, forming a resist pattern 75p having a thin layer 75r at the bottom.

[0232] As shown in Figure 25(f), the thin layer 75r of the resist pattern 75p is removed, and the pattern layer 221 above the pattern layer 311 and the pattern layer 311 are etched using the resist pattern 75p as a mask. As a result, predetermined patterns 223 and 313 are formed on the pattern layers 221 and 311, respectively, and alignment marks MKr are formed on the pattern layers 221 and 311, respectively, which are processed to be convex. Furthermore, the pattern layer 221 below the pattern layer 311 is exposed from the bottom of these patterns 223 and 313.

[0233] As a result, a pattern layer 311 of a different material is positioned at the lower end of the pattern 223 of the pattern layer 221, such as a silicon oxide layer, with a pattern 313 that overlaps vertically with the pattern 223 of the pattern layer 221.

[0234] As shown in Figure 25(g), the resist pattern 75p is removed by ashing.

[0235] Based on the above, other modified template types 220 are manufactured.

[0236] When forming the resin layer of a template using a template mold having a pattern layer such as a silicon oxide layer, the silicon oxide layer and the resin layer have similar refractive indices. This can reduce the visibility of alignment marks on the pattern layer, potentially lowering the alignment accuracy between the template mold and the quartz substrate.

[0237] According to the modified template type 210, it comprises a pattern layer 211 positioned above the substrate 131 and having a pattern 213 that is transferred to the resin layer 20a to become pattern 21, and a pattern layer 301 positioned at the upper end of the pattern 213 of the pattern layer 211 and made of a different material from the pattern layer 211.

[0238] In this way, by having a pattern layer 301 of a different type at the upper end of pattern 213 of pattern layer 211, the visibility of the alignment marks MKr provided on pattern layers 211 and 301 can be improved. This improves the alignment accuracy between the template mold 210 and the quartz substrate 10 of the template.

[0239] Furthermore, when etching the pattern layer 211, the pattern layer 301 at the upper end of pattern 213 functions as a hard mask layer, which reduces the dimensional difference between patterns 213 and 303 formed on the template mold 210. It also becomes possible to form patterns 213 and 303 with a higher overall aspect ratio.

[0240] According to the modified template type 220, the pattern layer 221 is positioned above the substrate 121 and has a pattern 223 that is transferred to the resin layer 20a to become pattern 21, and a pattern layer 311 is positioned at the lower end of the pattern 223 of the pattern layer 221 and is made of a different material from the pattern layer 221.

[0241] Even with this configuration, the visibility of the alignment marks MKr provided on the pattern layers 221 and 311 can be improved, thereby enhancing the alignment accuracy between the template mold 220 and the quartz substrate 10 of the template.

[0242] Furthermore, when etching the pattern layer 221, the pattern layer 311 at the lower end of the pattern 223 functions as a stopper layer, thereby suppressing variations in the depth of the patterns 223 and 313 formed on the template mold 220.

[0243] While several embodiments of the present invention have been described, these embodiments are presented as examples only and are not intended to limit the scope of the invention. These novel embodiments can be carried out in a variety of other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their variations are included in the scope and spirit of the invention, as well as in the claims of the invention and its equivalents. [Explanation of Symbols]

[0244] 1-7...Template, 10,10a,10b,10c...Quartz substrate, 11...Mesa section, 12,12a-12c,22,22a-22c,32a,32b...Anchor pattern, 15,35...Metal layer, 20,20a,20b,30,30a,30b,30c,30d...Resin layer, 21,103,203,213,223,303,313...Pattern, 41,61,62...Protective layer, 51...Adhesive layer, 100,110,110a,200,210,220...Template type, 101,111,111a,121,131...Substrate, 201,211,221,301,311...Pattern layer, MK,MKd,MKg...Alignment mark.

Claims

1. circuit board and The resin layer is bonded to the substrate and has a pattern on the side opposite to the side facing the substrate, The resin layer and the substrate side are, It has a recess and a protrusion on each other's opposing surfaces that can be interlocked. Template.

2. The aforementioned recess is It has a tapered shape that narrows from the bottom surface of the recess towards the open end of the recess. The aforementioned protrusion is, The protrusion has a tapered shape that widens from the base to the upper end of the protrusion. The template according to claim 1.

3. The resin layer is fitted into the recess of the substrate, or the protrusion is fitted into the recess of the substrate. The resin layer has at least one of the recesses into which the protrusions of the substrate are fitted. The template according to claim 1.

4. The aforementioned substrate is It is composed of a mesa portion that protrudes from one side and has an adhesive surface with the resin layer, The adhesive layer 30 is interposed between the mesa portion and the resin layer. The template according to claim 1.

5. The resin layer further comprises a first protective layer covering the surface having the pattern, The template according to claim 4.

6. The system further comprises a second protective layer interposed between the mesa portion and the adhesive layer. The template according to claim 5.

7. The aforementioned resin layer is A first resin layer having the pattern described above, The present invention comprises a second resin layer having an adhesive surface with the substrate, interposed between the first resin layer and the substrate, and having higher gas permeability than the first resin layer, The second resin layer is The adhesive surface has at least one of the recess or the protrusion, The aforementioned substrate is The protrusions that are fitted into the recesses of the second resin layer, The adhesive surface with the second resin layer has at least one of the recesses into which the protrusions of the second resin layer are fitted, The template according to claim 1.

8. The aforementioned resin layer is A first resin layer having the pattern described above, The present invention comprises a second resin layer having an adhesive surface with the substrate, interposed between the first resin layer and the substrate, and having higher gas permeability than the first resin layer, The first resin layer is At least one of the recess or the protrusion is located on the surface facing the substrate side via the second resin layer, The second resin layer is The protrusions that are fitted into the recesses of the first resin layer, The surface facing the first resin layer has at least one of the recesses into which the protrusions of the first resin layer are fitted, The template according to claim 1.

9. circuit board and Alignment marks having a metal layer are provided on the substrate, A first protective layer covering the substrate and the alignment marks, A resin layer is bonded to the first protective layer covering the substrate by an adhesive layer, and has a pattern on the surface opposite to the adhesive surface with the first protective layer, The system comprises a second protective layer covering the aforementioned resin layer, Template.

10. A method for reproducing a template according to claim 6, Remove the adhesive layer from the exposed portion of the adhesive layer and peel off the resin layer. How to play the template.

11. The first protective layer is, The resin layer has the patterned surface, the side surface of the mesa portion, one of the surfaces of the substrate, and the side surface of the substrate are continuously covered. The removal of the aforementioned adhesive layer is performed by This includes removing the first protective layer from one side of the substrate to expose the adhesive layer. A method for reproducing the template described in claim 10.

12. A manufacturing method for the template of claim 1, using a template type, The aforementioned template type is, Template-type circuit board and A first layer is placed above the template-type substrate and has a transfer pattern that is transferred to the resin layer to form the pattern, The first layer comprises a second layer, which is disposed at the upper or lower end of the transfer pattern of the first layer and is made of a different material from the first layer. A method for manufacturing templates.

13. The first layer is a silicon oxide layer, The second layer is at least one of an amorphous silicon layer, a silicon nitride layer, or a metal layer. A method for manufacturing a template according to claim 12.

Images