Manufacturing method of laminates

Abstract

To provide a method for manufacturing laminates that can reduce the generation of burrs. [Solution] The method for manufacturing a laminate comprises the steps of: placing a resist material layer made of a negative type photoresist on an intermediate; exposing the resist material layer using a mask that includes a first part, a second part having a light transmittance lower than that of the first part, and a third part having a light transmittance lower than that of the second part, with the second part positioned between the first and third parts in a top view; developing the exposed resist material layer to form a resist layer having a first region positioned in the region corresponding to the first part and in contact with the intermediate, a second region in the region corresponding to the second part that is separated from the intermediate and connected to the first region, and an opening formed in the region corresponding to the third part; forming a coating layer on the resist layer and on the intermediate so that surfaces other than the top surface of the resist layer are exposed; and removing the resist layer and removing the portion of the coating layer that was in contact with the resist layer.

Description

Technical Field

[0004] , ,

[0005] , ,

[0001] The embodiment relates to a method for manufacturing a laminate.

Background Art

[0002] When manufacturing a microstructured body such as a light emitting diode (LED), a laminate may be formed by a lift-off method. That is, a resist layer is formed on an intermediate body by a lithography method, a coating layer is formed on the intermediate body and on the resist layer, and a part of the coating layer is removed together with the resist layer to pattern the coating layer into a predetermined shape. At this time, burrs may occur in the patterned coating layer.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] An embodiment aims to provide a method for manufacturing a laminate capable of reducing the generation of burrs.

Means for Solving the Problems

[0005] A method for manufacturing a laminate according to an embodiment includes the steps of: placing a resist material layer made of a negative type photoresist on an intermediate; exposing the resist material layer using a mask that includes a first part, a second part having a light transmittance lower than that of the first part, and a third part having a light transmittance lower than that of the second part, wherein the second part is positioned between the first and third parts in a top view; developing the exposed resist material layer to form a resist layer that includes a first region located in the region corresponding to the first part and in contact with the intermediate, and a second region located in the region corresponding to the second part and separated from the intermediate and connected to the first region, with an opening formed in the region corresponding to the third part; forming a coating layer on the resist layer and on the intermediate such that at least a portion of the surfaces other than the top surface of the resist layer is exposed; and removing the resist layer to remove the portion of the coating layer that is in contact with the resist layer. [Effects of the Invention]

[0006] According to this embodiment, a method for manufacturing a laminate that can reduce the generation of burrs can be realized. [Brief explanation of the drawing]

[0007] [Figure 1A] Figure 1A is a plan view showing the mask used in the first embodiment. [Figure 1B] Figure 1B is a partially enlarged plan view showing area IB of Figure 1A. [Figure 2A] Figure 2A is a partially enlarged plan view showing region IIA in Figure 1B. [Figure 2B] Figure 2B is a cross-sectional view taken along the line IIB-IIB shown in Figure 2A. [Figure 3] Figure 3 is a cross-sectional view showing a process for manufacturing a laminate according to the first embodiment. [Figure 4] Figure 4 is a cross-sectional view showing a process for manufacturing a laminate according to the first embodiment. [Figure 5] Figure 5 is a cross-sectional view showing the manufacturing method of the laminate according to the first embodiment. [Figure 6A] Figure 6A is a cross-sectional view showing a process for manufacturing a laminate according to the first embodiment. [Figure 6B] Figure 6B is a cross-sectional view showing a process for manufacturing a laminate according to the first embodiment. [Figure 6C] Figure 6C is a cross-sectional view showing a process for manufacturing a laminate according to the first embodiment. [Figure 7] Figure 7 is a cross-sectional view showing the manufacturing method of the laminate according to the first embodiment. [Figure 8A] Figure 8A shows the mask used in the comparative example. [Figure 8B] Figure 8B is a cross-sectional view showing the process for manufacturing a laminate according to a comparative example. [Figure 8C] Figure 8C is a cross-sectional view showing the process for manufacturing a laminate according to a comparative example. [Figure 9] Figure 9 is a plan view showing a mask used in a modified example of the first embodiment. [Figure 10] Figure 10 is a plan view showing the mask used in the second embodiment. [Figure 11] Figure 11 is a cross-sectional view showing a process for manufacturing a laminate according to the second embodiment. [Figure 12] Figure 12 is a cross-sectional view showing a process for manufacturing a laminate according to the second embodiment. [Figure 13] Figure 13 is a cross-sectional view showing a process for manufacturing a laminate according to the second embodiment. [Figure 14] Figure 14 is a plan view showing the mask used in the third embodiment. [Figure 15] Figure 15 is a cross-sectional view showing a process for manufacturing a laminate according to the third embodiment. [Figure 16] Figure 16 is a cross-sectional view showing a process for manufacturing a laminate according to the third embodiment. [Modes for carrying out the invention]

[0008] <First Embodiment> In this embodiment, a laminate is manufactured by forming a coating layer on an intermediate body. The laminate is, for example, part of a light-emitting diode. In this case, the intermediate body is, for example, a sapphire substrate or a semiconductor structure, and the coating layer is a wiring or the like.

[0009] FIG. 1A is a plan view showing a mask used in this embodiment. FIG. 1B is a partially enlarged plan view showing region IB of FIG. 1A. FIG. 2A is a partially enlarged plan view showing region IIA of FIG. 1B. FIG. 2B is a cross-sectional view taken along line IIB-IIB shown in FIG. 2A. FIGS. 3 to 7 are process cross-sectional views showing a method for manufacturing a laminate according to this embodiment. Note that each figure is schematic and is emphasized or simplified as appropriate. Even when the same component is shown in a plurality of figures, the shape and number of each component do not necessarily exactly match. The same applies to other figures described later. Also, as a cross-sectional view, there may be a case where an end view showing only the cut surface is shown.

[0010] (Mask 100) First, the mask used in this embodiment will be described. As shown in FIGS. 1A to 2B, the exposure mask 100 used in this embodiment includes a first part 101, a second part 102, and a third part 103. In a top view, the second part 102 is disposed between the third part 103 and the first part 101 and surrounds the third part 103.

[0011] The mask 100 includes a light-transmissive member 110 and a metal member 120 disposed on the light-transmissive member 110. The light-transmissive member 110 is made of a material having a high light transmittance. The light-transmissive member 110 is, for example, a quartz plate. The metal member 120 is made of a material having a lower light transmittance than the light transmittance of the light-transmissive member 110. The metal member 120 is, for example, a metal layer made of chromium (Cr). In this specification, the "light transmittance" is the light transmittance with respect to the peak wavelength of light from the light source used in the step of exposing the resist material layer described later.

[0012] In the first part 101 of the mask 100, no metal member 120 is placed. In the second part 102, a plurality of openings 121 are formed in the metal member 120. The arrangement of the openings 121 can be, for example, a rectangular grid or a triangular grid. In the example shown in Figure 2A, the openings 121 formed in the metal member 120 are arranged in a regular triangular grid. The shape of the openings 121 when viewed from above can be, for example, a square, a circle, or an ellipse. The maximum diameter of the openings 121 when viewed from above can be, for example, 0.2 μm or more and 2.0 μm or less. In the third part 103, the metal member 120 is placed throughout the entire third part 103.

[0013] Therefore, the area of ​​the metal member 120 per unit area in Part 2 102 is larger than the area of ​​the metal member 120 per unit area in Part 1 101, and the area of ​​the metal member 120 per unit area in Part 3 103 is larger than the area of ​​the metal member 120 per unit area in Part 2 102. In the above example, the ratio of the area of ​​the metal member 120 per unit area in Part 1 101 is 0%, the ratio of the area of ​​the metal member 120 per unit area in Part 2 102 is higher than 0% but lower than 100%, and the ratio of the area of ​​the metal member 120 per unit area in Part 3 103 is 100%.

[0014] As a result, the light transmittance of Part 2 102 is lower than that of Part 1 101, and the light transmittance of Part 3 103 is lower than that of Part 2 102. For example, the light transmittance of Part 2 102 is between 10% and 90% of the light transmittance of Part 1 101.

[0015] (Step of placing the resist material layer 20) Next, a method for manufacturing the laminate according to this embodiment will be described. First, an intermediate 10 is prepared. The intermediate 10 is, for example, a substrate or a structure. In the case of a substrate, it may be, for example, a semiconductor substrate such as a silicon substrate, or it may be a crystal growth substrate such as a sapphire substrate, or it may be a wiring substrate. In the case of a structure, it may be, for example, a semiconductor structure having multiple semiconductor layers, or it may be a wiring structure.

[0016] Next, as shown in Figure 3, a resist material layer 20 made of a negative-type photoresist is placed on the intermediate 10. For example, by coating the intermediate 10 with a negative-type photoresist, the resist material layer 20 is placed over the entire upper surface 15 of the intermediate 10. The upper surface 21 of the resist material layer 20 is preferably a flat surface or a nearly flat surface.

[0017] (Step of exposing the resist material layer 20) As shown in Figure 4, the resist material layer 20 is exposed using the mask 100 described above. At this time, the focus of the light L used for exposure is set to the upper surface 21 of the resist material layer 20. In the first part 101 of the mask 100, most of the light L is transmitted and irradiates the resist material layer 20. In the second part 102, a portion of the light L is transmitted and irradiates the resist material layer 20. That is, the amount of light transmitted in the second part 102 is less than the amount of light transmitted in the first part 101. In the third part 103, most of the light L is blocked and the resist material layer 20 is not substantially irradiated. The peak wavelength of the light from the light source used in the process of exposing the resist material layer 20 is, for example, 300 nm or more and 500 nm or less.

[0018] In the negative-type resist material layer 20, the solubility in the developer decreases in the area irradiated with light L. Hereinafter, the portion of the resist material layer 20 that has been irradiated with light L and whose solubility in the developer has decreased will be referred to as the "exposed portion 22". In the resist material layer 20, the portion irradiated with light that has passed through the first part 101 of the mask 100 becomes the exposed portion 22 in the thickness direction. In the resist material layer 20, the portion irradiated with light that has passed through the second part 102 of the mask 100 becomes the exposed portion 22 only in the upper part, while the lower part remains the unexposed resist material layer 20. In the resist material layer 20, the portion irradiated with light that has passed through the third part 103 of the mask 100 does not generate an exposed portion 22, and the entire portion remains the unexposed resist material layer 20.

[0019] (Process for forming a resist layer) Next, as shown in Figure 5, the exposed resist material layer 20 is developed using a developer. For example, an organic solvent is used as the developer. As a result, the exposed portion 22 of the resist material layer 20, whose solubility has decreased, remains, while the rest is dissolved. As a result, a resist layer 30 consisting of the exposed portion 22 is formed on the intermediate 10. The thickness of the resist layer 30 is, for example, 0.5 μm or more and 15 μm or less, preferably 1.0 μm or more and 10 μm or less, and more preferably 1.0 μm or more and 5.0 μm or less. In this specification, "thickness" refers to the maximum thickness in the thickness direction of each component.

[0020] In the resist layer 30, a first region 31, a second region 32, and an opening 33 are formed. The first region 31 is located in the region corresponding to the first part 101 of the mask 100 and is in contact with the intermediate body 10. The second region 32 is located in the region corresponding to the second part 102 of the mask 100, is separated from the intermediate body 10, and is connected to the first region 31. The opening 33 is formed in the region corresponding to the third part 103 of the mask 100. The opening 33 and the region located directly below the second region 32 are connected. In the opening 33 and the second region 32, the upper surface 15 of the intermediate body 10 is exposed from the resist layer 30. The width of the second region 32 in a top view is, for example, 1.0 μm or more and 6.0 μm or less, more preferably 2.0 μm or more and 5.0 μm or less. The thickness of the second region 32 is, for example, 40% or more and 90% or less of the thickness of the first region 31, preferably 50% or more and 80% or less. The thickness of the second region 32 is, for example, 1.0 μm or more and 5.0 μm or less. The thickness of the second region 32 can be changed, for example, by appropriately adjusting the transmittance in the second part 102 of the mask 100.

[0021] (Step of forming the coating layer 40) Next, as shown in Figures 6A to 6C, a coating material is placed on the intermediate 10 and the resist layer 30. For example, the coating material is deposited on the intermediate 10 and the resist layer 30 by sputtering. The coating material is, for example, a metal. However, the coating material may be something other than a metal, such as an insulating material.

[0022] In this case, as shown in Figure 6A, the coating material 49 is supplied along a direction H perpendicular to the upper surface 15 of the intermediate body 10, thereby forming a coating layer 40 on the upper surface 15 of the intermediate body 10 and the upper surface 36 of the resist layer 30. Alternatively, as shown in Figures 6B and 6C, the coating material 49 may be supplied along a direction inclined with respect to direction H, thereby forming a coating layer 40 on the upper surface 15 of the intermediate body 10 and the upper surface 36 of the resist layer 30. For example, the coating layer 40 may be formed by supplying the coating material 49 along direction H and a direction inclined with respect to direction H, respectively.

[0023] In this way, a coating layer 40 is formed on the intermediate body 10 and the resist layer 30. The coating layer 40 is formed on the entire upper surface 36 of the resist layer 30 and on the inner surface 34 of the opening 33. The coating layer 40 is also formed on the upper surface 15 of the intermediate body 10 in the region of the resist layer 30 that overlaps with the opening 33, and around the region that overlaps with the opening 33. The thickness of the coating layer 40 formed in the region that overlaps with the opening 33 is approximately uniform. Around the region that overlaps with the opening 33, the thickness of the coating layer 40 becomes thinner than the thickness of the coating layer 40 formed in the region that overlaps with the opening 33 as you move away from the region that overlaps with the opening 33.

[0024] On the other hand, the coating layer 40 exposes at least a portion of the surface of the resist layer 30 other than the upper surface 36. For example, the coating layer 40 is not placed on the side surface of the first region 31 and the lower surface of the second region 32 of the resist layer 30. Therefore, the first portion 41 of the coating layer 40 that is in contact with the resist layer 30 is not connected to the second portion 42 of the coating layer 40 that is in contact with the intermediate 10. In other words, the first portion 41 placed on the upper surface 36 of the resist layer 30 and on the inner surface 34 of the opening 33 is not connected to the region of the resist layer 30 that overlaps with the opening 33 and to the second portion 42 deposited around the region that overlaps with the opening 33.

[0025] (Removal process) Next, as shown in Figure 7, the resist layer 30 is removed. As a result, the first portion 41 of the coating layer 40 that was in contact with the resist layer 30 is also removed along with the resist layer 30, leaving the second portion 42 that was not in contact with the resist layer 30. The second portion 42 of the coating layer 40 forms a component 50. The component 50 is, for example, a wiring made of a metal material. By forming the component 50 on the intermediate body 10, a laminate 60 is manufactured. If the intermediate body 10 is a semiconductor structure having multiple semiconductor layers, the component 50 functions, for example, as an electrode electrically connected to the semiconductor structure. The resist layer 30 is removed, for example, using a solution capable of removing the resist layer 30.

[0026] (effect) According to this embodiment, by exposing a negative-type resist material layer 20 using a mask 100 having a second part 102, a second region 32 separated from the intermediate 10 can be formed on the resist layer 30 after development of the resist material layer 20. This allows for the separation of the first part 41 in contact with the resist layer 30 and the second part 42 in contact with the intermediate 10 when the coating layer 40 is deposited. As a result, when the resist layer 30 is removed, only the first part 41 of the coating layer 40 can be removed, leaving the second part 42, thereby reducing the generation of burrs on the member 50.

[0027] <Comparative Example> To explain the effects of the first embodiment described above, a comparative example will be described. Figure 8A shows the mask used in this comparative example. Figures 8B and 8C are cross-sectional views showing the process for manufacturing the laminate according to this comparative example.

[0028] As shown in Figure 8A, the mask 900 of this comparative example has a first part 101 and a third part 103, but does not have a second part 102. The configuration of the first part 101 and the third part 103 is the same as that of the mask 100 in the first embodiment.

[0029] As shown in Figure 8B, when the negative-type resist material layer 20 is exposed using the mask 900 and developed, the first region 31 and the opening 33 are formed in the resist layer 39, but the second region 32 is not formed. When the coating material is deposited in this state, the first portion 41 in contact with the resist layer 39 and the second portion 42 in contact with the intermediate 10 of the coating layer 40 become connected.

[0030] Subsequently, as shown in Figure 8C, when the resist layer 39 is removed, most of the first portion 41 of the coating layer 40 is removed, but there is a possibility that the portion in contact with the second portion 42 may not be completely removed. In this case, burrs 58 may be formed on the member 59.

[0031] <Modified form of the first embodiment> This modified version differs from the first embodiment in that it uses a different mask for exposure. Figure 9 is a plan view showing the mask used in this modified example.

[0032] As shown in Figure 9, in this modified example, the mask 150 has a plurality of metal members 120 arranged at a distance from each other in the second part 102. The shape of the upper surface of each metal member 120 is, for example, a square or a circle. The arrangement of the metal members 120 in the second part 102 is, for example, a rectangular grid or a triangular grid. In the example shown in Figure 9, the metal members 120 in the second member 102 are arranged in a regular triangular grid.

[0033] The configuration of the first part 101 and the third part 103 of the mask 150 in this modified example is the same as that of the mask 100 in the first embodiment. This also allows for the same effects as in the first embodiment. The configuration, operation, and effects of this modified example other than those described above are the same as in the first embodiment.

[0034] <Second Embodiment> This embodiment differs from the first embodiment in the shape of the intermediate and the mask used for exposure. The configuration of this embodiment, other than the shape of the intermediate and the mask, is the same as in the first embodiment. Figure 10 is a plan view showing the mask used in this embodiment. Figures 11 to 13 are cross-sectional views showing the process for manufacturing the laminate according to this embodiment.

[0035] First, the exposure mask used in this embodiment will be described. As shown in Figure 10, the mask 200 used in this embodiment includes a fourth part 104 in addition to the first part 101, second part 102, and third part 103. The light transmittance of the fourth part 104 is lower than that of the first part 101 and higher than that of the second part 102. That is, the amount of light transmitted through the fourth part 104 is less than the amount of light transmitted through the first part 101 and greater than the amount of light transmitted through the second part 102.

[0036] In the example shown in Figure 10, the second part 102 and the fourth part 104 are positioned between the first part 101 and the third part 103 in a top view. The third part 103 is positioned between the second part 102 and the fourth part in a top view. That is, in the mask 200, in the region shown in Figure 10, the parts are arranged in the order of the first part 101, the fourth part 104, the third part 103, the second part 102, and the first part 101.

[0037] Next, a method for manufacturing the laminate according to this embodiment will be described. As shown in Figure 11, in this embodiment, the upper surface 15 of the intermediate body 10 includes a first surface 11 and a second surface 12 of different heights. The second surface 12 is positioned lower than the first surface 11. The upper surface 15 of the intermediate body 10 has a step. A resist material layer 20 made of a negative type photoresist is placed on the intermediate body 10. The upper surface 21 of the resist material layer 20 is preferably a flat surface or a nearly flat surface.

[0038] Next, as shown in Figure 12, the resist material layer 20 is exposed using the mask 200. At this time, the second part 102 of the mask 200 is placed in the region corresponding to the first surface 11 of the upper surface 15 of the intermediate body 10, and the fourth part 104 of the mask 200 is placed in the region corresponding to the second surface 12 of the upper surface 15 of the intermediate body 10. In addition, the first part 101 of the mask 200 is placed in the region where the entire resist material layer 20 is exposed 22, and the third part 103 of the mask 200 is placed in the region where the opening 33 is formed.

[0039] In the resist material layer 20, in the portion irradiated by light transmitted through the fourth part 104 of the mask 200, only the upper part becomes the exposed portion 22, while the lower part remains the unexposed resist material layer 20. The exposed portion 22 formed in the portion of the resist material layer 20 corresponding to the fourth part 104 of the mask 200 is thicker than the exposed portion 22 formed in the portion corresponding to the second part 102. This is because, as described above, the amount of light transmitted in the fourth part 104 is greater than the amount of light transmitted in the second part 102. Similar to the first embodiment, in the resist material layer 20, the entire portion corresponding to the first part 101 of the mask 200 becomes the exposed portion 22, and no exposed portion 22 is formed in the portion corresponding to the third part 103.

[0040] Next, as shown in Figure 13, the resist material layer 20 is developed. This leaves the exposed portion 22 of the resist material layer 20, forming the resist layer 30. The resist layer 30 includes a first region 31, a second region 32, an opening 33, and a third region 35. The third region 35 is the region irradiated by light L that has passed through the fourth portion 104 of the mask 200. That is, the third region 35 is located in the region corresponding to the fourth portion 104 of the mask 200. The third region 35 is separated from the intermediate 10. The thickness t3 of the third region 35 of the resist layer 30 is greater than the thickness t2 of the second region 32. The second region 32 is located on the first surface 11 of the intermediate 10, and the third region 35 is located on the second surface 12 of the intermediate 10.

[0041] By considering the difference in height between the first surface 11 and the second surface 12, and setting the thickness t2 of the second region 32 and the thickness t3 of the third region 35, the distance D2 between the first surface 11 of the intermediate body 10 and the second region 32 of the resist layer 30 is set to be approximately equal to the distance D3 between the second surface 12 of the intermediate body 10 and the third region 35 of the resist layer 30. Approximately equal distance D2 to distance D3 means, for example, that distance D2 is between 90% and 110% of distance D3. Distance D2 is the maximum length in the thickness direction between the first surface 11 of the intermediate body 10 and the second region 32 of the resist layer 30. Distance D3 is the maximum length in the thickness direction between the second surface 12 of the intermediate body 10 and the third region 35 of the resist layer 30.

[0042] According to this embodiment, by using a mask 200 having a fourth portion 104, the intensity of light transmitted through the fourth portion 104 can be made higher than the intensity of light transmitted through the second portion 102, thereby forming a third region 35 in the resist layer 30. The thickness t3 of the third region 35 of the resist layer 30 is greater than the thickness t2 of the second region 32. By placing the second region 32 on the first surface 11 of the intermediate body 10 and the third region 35 on the second surface 12 of the intermediate body 10, the distance D2 is made approximately equal to the distance D3. In this way, even if there is a step on the upper surface 15 of the intermediate body 10, the distance between the intermediate body 10 and the resist layer 30 can be uniformly reduced. As a result, even if there is a step on the upper surface 15 of the intermediate body 10, the generation of burrs on the member 50 can be reduced. The manufacturing method and effects in this embodiment other than those described above are the same as in the first embodiment.

[0043] <Third Embodiment> This embodiment differs from the first embodiment in that it uses a different mask for exposure. Aside from the mask, the configuration in this embodiment is the same as in the first embodiment. Figure 14 is a plan view showing the mask used in this embodiment. Figures 15 and 16 are cross-sectional views showing the process for manufacturing the laminate according to this embodiment.

[0044] First, the exposure mask used in this embodiment will be described. As shown in Figure 14, the mask 300 used in this embodiment includes a fourth part 104 in addition to the first part 101, the second part 102, and the third part 103. The light transmittance of the fourth part 104 is lower than that of the first part 101 and higher than that of the second part 102.

[0045] In a top view, the fourth part 104 is positioned between the first part 101 and the second part 102. The second part 102 is positioned between the third part 103 and the fourth part 104. That is, in the mask 300, in the region shown in Figure 14, the parts are arranged in the order of first part 101, fourth part 104, second part 102, third part 103, second part 102, fourth part 104, and first part 101.

[0046] Next, a method for manufacturing the laminate according to this embodiment will be described. As shown in Figure 15, in this embodiment, the resist material layer 20 is exposed using the mask 300. Similar to the second embodiment, the exposed portion 22 formed on the part of the resist material layer 20 corresponding to the fourth part 104 of the mask 300 is thicker than the exposed portion 22 formed on the part corresponding to the second part 102. Furthermore, the entire part of the mask 300 corresponding to the first part 101 becomes the exposed portion 22, and no exposed portion 22 is formed on the part corresponding to the third part 103.

[0047] Next, as shown in Figure 16, the resist material layer 20 is developed. This leaves the exposed portion 22 of the resist material layer 20, forming the resist layer 30. The resist layer 30 includes a first region 31, a second region 32, an opening 33, and a third region 35. The third region 35 is the region irradiated by light L that has passed through the fourth portion 104 of the mask 200, and is separated from the intermediate 10. The thickness t3 of the third region 35 of the resist layer 30 is thinner than the thickness t1 of the first region 31 and thicker than the thickness t2 of the second region 32.

[0048] As a result, a step is formed on the lower surface of the resist layer 30, and the distance between the intermediate 10 and the resist layer 30 decreases as it moves away from the area overlapping with the opening 33. Consequently, on the upper surface 15 of the intermediate 10, the coating material has difficulty reaching the portion of the resist layer 30 that is far from the area overlapping with the opening 33, making it difficult for the coating layer 40 to form. In other words, the supply of the coating material is obstructed by the third region 35, causing the coating layer 40 to form on the side surface of the third region 35, while it becomes difficult for the coating layer 40 to form in the area directly below the third region 35.

[0049] According to this embodiment, the shape of the coating layer 40 can be controlled with greater precision compared to the first embodiment. As a result, the generation of burrs on the member 50 can be reduced more effectively. The manufacturing method and effects of this embodiment other than those described above are the same as those of the first embodiment.

[0050] The embodiments and their modifications described above are examples that embody the present invention, and the present invention is not limited to these embodiments and modifications. For example, the present invention also includes the addition, deletion, or modification of some components or processes in the embodiments and modifications described above. Furthermore, the embodiments and modifications described above can be implemented in combination with each other.

[0051] The present invention includes the following embodiments.

[0052] (Note 1) A step of placing a resist material layer consisting of a negative-type photoresist on an intermediate, A step of exposing the resist material layer using a mask comprising a first part, a second part having a light transmittance lower than that of the first part, and a third part having a light transmittance lower than that of the second part, wherein the second part is positioned between the first and third parts in a top view, A step of developing the exposed resist material layer to form a resist layer that includes a first region located in the region corresponding to the first part and in contact with the intermediate, and a second region located in the region corresponding to the second part and separated from the intermediate and connected to the first region, with an opening formed in the region corresponding to the third part. A step of forming a coating layer on the resist layer and on the intermediate such that at least a portion of the surface other than the upper surface of the resist layer is exposed. The process of removing the resist layer to remove the portion of the coating layer that is in contact with the resist layer, A method for manufacturing a laminate equipped with the following features.

[0053] (Note 2) The method for manufacturing a laminate according to Appendix 1, wherein the coating layer is formed by sputtering in the step of forming the coating layer.

[0054] (Note 3) The method for manufacturing a laminate according to Appendix 1 or 2, wherein the thickness of the resist layer is 0.5 μm or more and 15 μm or less.

[0055] (Note 4) A method for manufacturing a laminate according to any one of the appendices 1 to 3, wherein the light transmittance of the second part is 10% or more and 90% or less of the light transmittance of the first part.

[0056] (Note 5) The mask includes a light-transmitting member and a metal member disposed on the light-transmitting member. The area of ​​the metal member per unit area of ​​the second part is greater than the area of ​​the metal member per unit area of ​​the first part. A method for manufacturing a laminate according to any one of the appendices 1 to 4, wherein the area of ​​the metal member per unit area of ​​the third part is greater than the area of ​​the metal member per unit area of ​​the second part.

[0057] (Note 6) In the aforementioned Part 1, the metal member is not arranged. In the second part, a plurality of openings are formed in the metal member, The method for manufacturing a laminate according to Appendix 5, wherein the metal member is arranged throughout the third part.

[0058] (Note 7) In the aforementioned Part 1, the metal member is not arranged. In the second part, a plurality of the metal members are arranged apart from each other. The method for manufacturing a laminate according to Appendix 5, wherein the metal member is arranged throughout the third part.

[0059] (Note 8) A method for manufacturing a laminate according to any one of the appendices 1 to 7, wherein in the step of exposing the resist material layer, the focus of the light used for exposure is aligned with the upper surface of the resist material layer.

[0060] (Note 9) The mask further includes a fourth part positioned between the first and second parts in a top view, the fourth part having a light transmittance lower than that of the first part and higher than that of the second part. A method for manufacturing a laminate according to any one of 1 to 8, wherein the resist layer is disposed in a region corresponding to the fourth part and separated from the intermediate, and includes a third region which is thicker than the second region and is disposed between the first region and the second region.

[0061] (Note 10) The mask further includes a fourth part whose transmittance is lower than that of the first part and higher than that of the second part. The upper surface of the intermediate body includes a first surface and a second surface positioned lower than the first surface. A method for manufacturing a laminate according to any one of appendices 1 to 8, wherein the second part of the mask is placed in a region corresponding to the first surface of the upper surface of the intermediate, and the fourth part of the mask is placed in a region corresponding to the second surface of the upper surface of the intermediate.

[0062] (Note 11) The mask further includes a fourth part whose transmittance is lower than that of the first part and higher than that of the second part. The upper surface of the intermediate body includes a first surface and a second surface positioned lower than the first surface. In the exposure step, the second part of the mask is placed in a region corresponding to the first surface of the upper surface of the intermediate, and the fourth part of the mask is placed in a region corresponding to the second surface of the upper surface of the intermediate. The method for manufacturing a laminate according to Appendix 1, wherein, in the step of forming the resist layer, the resist layer includes a third region disposed in a region corresponding to the fourth part and separated from the intermediate, and the distance between the first surface of the intermediate and the second region of the resist layer is equal to the distance between the second surface of the intermediate and the third region of the resist layer.

[0063] (Note 12) A method for manufacturing a laminate according to any one of the appendices 1 to 11, wherein in the step of forming the coating layer, the portion of the coating layer in contact with the resist layer does not connect with the portion of the coating layer in contact with the intermediate. [Explanation of Symbols]

[0064] 10 Intermediates 11 Page 1 12 Side 2 15 Upper surface of intermediate 10 20 Resist material layer 21 Upper surface of the resist material layer 20 22 Exposure area 30 Resist Layers 31 First area 32 Second area 33 Opening 34 Inner surface 35 Third area 36 Top surface of the resist layer 30 39 Resist Layers 40 Covering layer 41 Part 1 42 Part 2 49. Covering materials 50 components 58 Bali 59 components 60-layer structure 100 masks 101 Part 1 102 Part 2 103 Part 3 104 Part 4 110 Translucent material 120 Metal components 121 Opening 150, 200, 300, 900 masks D2 Distance between the first surface 11 and the second region 32 D3 Distance between the second surface 12 and the third region 35 H in a direction perpendicular to the top surface 15 L light t1 Thickness of the first region 31 t2 Thickness of the second region 32 t3 Thickness of the third region 35

Claims

1. A step of placing a resist material layer consisting of a negative-type photoresist on an intermediate, A step of exposing the resist material layer using a mask comprising a first part, a second part having a light transmittance lower than that of the first part, and a third part having a light transmittance lower than that of the second part, wherein the second part is positioned between the first and third parts in a top view, A step of developing the exposed resist material layer to form a resist layer that includes a first region located in the region corresponding to the first part and in contact with the intermediate, and a second region located in the region corresponding to the second part and separated from the intermediate and connected to the first region, with an opening formed in the region corresponding to the third part. A step of forming a coating layer on the resist layer and on the intermediate such that at least a portion of the surface other than the upper surface of the resist layer is exposed. The process of removing the resist layer to remove the portion of the coating layer that is in contact with the resist layer, A method for manufacturing a laminate equipped with the following features.

2. The method for manufacturing a laminate according to claim 1, wherein the coating layer is formed by sputtering in the step of forming the coating layer.

3. The method for manufacturing a laminate according to claim 1, wherein the thickness of the resist layer is 0.5 μm or more and 15 μm or less.

4. The method for manufacturing a laminate according to claim 1, wherein the light transmittance of the second part is 10% or more and 90% or less of the light transmittance of the first part.

5. The mask includes a light-transmitting member and a metal member disposed on the light-transmitting member. The area of ​​the metal member per unit area of ​​the second part is greater than the area of ​​the metal member per unit area of ​​the first part. The method for manufacturing a laminate according to claim 1, wherein the area of ​​the metal member per unit area of ​​the third part is greater than the area of ​​the metal member per unit area of ​​the second part.

6. In the first part, the metal member is not arranged. In the second part, a plurality of openings are formed in the metal member, The method for manufacturing a laminate according to claim 5, wherein the metal member is arranged throughout the third part.

7. In the first part, the metal member is not arranged. In the second part, a plurality of the metal members are arranged apart from each other. The method for manufacturing a laminate according to claim 5, wherein the metal member is arranged throughout the third part.

8. The method for manufacturing a laminate according to claim 1, wherein in the step of exposing the resist material layer, the focus of the light used for exposure is aligned with the upper surface of the resist material layer.

9. The mask further includes a fourth part positioned between the first and second parts in a top view, the fourth part having a light transmittance lower than that of the first part and higher than that of the second part. The method for manufacturing a laminate according to claim 1, wherein the resist layer is disposed in a region corresponding to the fourth part and separated from the intermediate, has a thickness greater than the second region, and includes a third region disposed between the first region and the second region.

10. The mask further includes a fourth part whose light transmittance is lower than that of the first part and higher than that of the second part. The upper surface of the intermediate body includes a first surface and a second surface positioned lower than the first surface. The method for manufacturing a laminate according to claim 1, wherein the second part of the mask is placed in a region corresponding to the first surface of the upper surface of the intermediate, and the fourth part of the mask is placed in a region corresponding to the second surface of the upper surface of the intermediate.

11. The mask further includes a fourth part whose light transmittance is lower than that of the first part and higher than that of the second part. The upper surface of the intermediate body includes a first surface and a second surface positioned lower than the first surface. In the exposure step, the second part of the mask is placed in a region corresponding to the first surface of the upper surface of the intermediate, and the fourth part of the mask is placed in a region corresponding to the second surface of the upper surface of the intermediate. The method for manufacturing a laminate according to claim 1, wherein, in the step of forming the resist layer, the resist layer includes a third region disposed in a region corresponding to the fourth part and separated from the intermediate, and the distance between the first surface of the intermediate and the second region of the resist layer is equal to the distance between the second surface of the intermediate and the third region of the resist layer.

12. The method for manufacturing a laminate according to claim 1, wherein in the step of forming the coating layer, the portion of the coating layer in contact with the resist layer does not connect with the portion of the coating layer in contact with the intermediate.

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