Current application device for discrete power semiconductor components

Abstract

By preventing damage to the surface of the leads of discrete power semiconductor components, the application of high current becomes more reliable, improving accuracy. [Solution] A current application device 3 for applying a large current to a strip-shaped lead portion 2 provided on a power semiconductor discrete component 1, wherein the current application device 3 comprises a flexible planar probe 4 that covers the surface 2a of the lead portion 2, and a movable means for pressing the planar probe 4 against the surface 2a of the lead portion 2a.

Description

Technical Field

[0001] This invention particularly relates to a current application device for power semiconductor discrete components that require a large current.

Background Art

[0002] In recent years, in power semiconductor discrete components, when applying current and voltage or conducting electrical characteristic inspections, contact probes are often used to contact the semiconductor for current application and electrical characteristic inspections.

[0003] Generally, as contact probes, a type with densely packed spring probes or a stacked contact probe is used. The type with densely packed spring probes is a contact probe that makes electrical connection with a semiconductor by contacting a metal pin that can expand and contract vertically inside a cylinder with the semiconductor on an electronic circuit board with spring force. In this type with densely packed spring probes, there is a limit to the number that can be densely packed within the surface area of the inspection target such as a semiconductor, resulting in a limitation on the conduction current and a problem of being unsuitable for electrical characteristic inspections that require a large current.

[0004] Therefore, a stacked probe of Patent Document 1 corresponding to inspections of power semiconductors for large currents having contact points with an ultra-small pitch interval has been proposed. This stacked contact probe is a contact probe that makes electrical connection by pressing a metal thin plate laminated in the thickness direction against the contact point of the semiconductor on an electronic circuit board.

Prior Art Documents

Patent Documents

[0005]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0006] While the aforementioned contact probes are certainly suitable for inspecting power semiconductors with a large number of contact points with the object being tested, their surface contact range for each individual semiconductor is narrow, which limits their ability to inspect today's high-current power semiconductors.

[0007] This invention was made to solve the above problems, and aims to provide a current application device for power semiconductor discrete components that ensures the application of current and voltage without damaging the surface of the lead portion of the power semiconductor discrete component, thereby improving the accuracy of electrical characteristic testing of the object under test, such as the power semiconductor discrete component. [Means for solving the problem]

[0008] In order to solve the aforementioned problems and achieve the objective, this invention is configured as follows.

[0009] The invention described in claim 1 is a current application device for applying a large current to a strip-shaped lead portion provided on a power semiconductor discrete component, characterized in that the current application device comprises a flexible planar probe that covers the surface of the lead portion and a movable means for pressing the planar probe against the surface of the lead portion.

[0010] The invention described in claim 2 is a current application device for a power semiconductor discrete component as described in claim 1, characterized in that the movable means comprises a laminated member formed by stacking a plurality of thin plates in the thickness direction, and a holder that supports each of the thin plates of the laminated member so as to be movable in the vertical direction, and an elastic member attached to the holder brings the tip of the thin plate of the laminated member into contact with the planar probe, causing the planar probe to deform to conform to the irregularities of the lead and to come into close contact with the surface of the lead.

[0011] The invention described in claim 3 is a current application device for a power semiconductor discrete component according to claim 1 or claim 2, characterized in that the planar probe is made of a copper material or copper alloy material with a thickness of 0.1 mm to 0.25 mm. [Effects of the Invention]

[0012] With the above configuration, this invention has the following effects.

[0013] The invention described in claim 1 is a current application device for applying a large current to a strip-shaped lead portion provided on a power semiconductor discrete component, wherein the current application device comprises a flexible planar probe that covers the surface of the lead portion and a movable means for pressing the planar probe against the surface of the lead portion. As such, it is possible to apply current without damaging the surface of the lead portion of the power semiconductor discrete component, and the large surface area of ​​the planar probe ensures reliable current application and improves accuracy, while the planar probe simplifies the structure and reduces the overall cost of the device related to the planar probe.

[0014] In the invention described in claim 2, the movable means comprises a laminated member formed by stacking a plurality of thin plates in the thickness direction, and a holder that supports each of the thin plates of the laminated member so as to be movable in the vertical direction. An elastic member attached to the holder causes the tip of the thin plate of the laminated member to come into contact with the planar probe, causing the planar probe to deform to conform to the irregularities of the lead and come into close contact with the surface of the lead. As a result, even if a part of the planar probe does not make contact due to the irregularities on the surface of the lead, the tips of the other thin plates will come into contact with the surface of the planar probe, thereby ensuring that a large current is reliably applied to the discrete component of the power semiconductor.

[0015] In the invention described in claim 3, since the planar probe is made of copper or copper alloy material with a thickness of 0.1 mm to 0.25 mm, even if the biasing force by the elastic member is small, the planar probe conforms easily to the surface of the lead, and measurement errors are eliminated. [Brief explanation of the drawing]

[0016] [Figure 1] This is a plan view showing the discrete components in this invention. [Figure 2] It is a cross-sectional view taken along the line A-A of FIG. 1. [Figure 3] It is a front view showing a partial cross-section of the movable means in this invention. [Figure 4] It is a side view of the thin plate of the laminated member in this invention. [Figure 5] An enlarged view explaining the operation of the current application device in this invention.

Mode for Carrying Out the Invention

[0017] Hereinafter, embodiments of this invention will be described. The embodiments of this invention show the most preferred forms of the invention and are not limited to this.

[0018] Embodiments of this invention will be described based on FIGS. 1 and 4. Reference numeral 1 is a power semiconductor discrete component. This power semiconductor discrete component 1 is composed of a strip-shaped lead portion 2 that alternately changes between a conductive state and an insulating state by an electrical action. Since the lead portion 2 is a metal processed part, some irregularities will occur on the surface.

[0019] Reference numeral 3 is a current application device 3 for applying a larger current to the power semiconductor discrete component 1 than the lead portion 2. This current application device 3 includes a flexible planar probe 4 that covers the surface 2a of the lead portion 2, and a movable means 5 that presses the planar probe 4 against the surface 2a of the lead portion 2.

[0020] The planar probe 4 is made of a copper material or a copper alloy material with a thickness of 0.1 mm to 0.25 mm, and is externally connected to the power generation unit 10 by an external connection cable 9. No relay or the like with a switching function is interposed in this external connection cable 9.

[0021] The movable means 5 includes a laminated member 6 formed by stacking a plurality of insulating thin plates 6a in the thickness direction, and a holder 7 that supports each of the thin plates 6a of the laminated member 6 so as to be movable in the vertical direction.

[0022] The tip of the thin plate 6a of the laminated member 6 is brought into contact with the planar probe 4 by an elastic member 8 having a U-shaped cross section mounted on the holder 7, so that the planar probe 4 is deformed along the unevenness of the lead portion 2 and closely contacts the surface 2a of the lead portion 2.

[0023] Even if the biasing force by the elastic member 8 is small, the planar probe 4 easily conforms to the surface 2a of the lead portion 2, minimizing the loss of current application, and no [unclear term] occurs. The strength of the planar probe 4 is increased and the durability is improved. Also, linear scratches due to contact on the surface 2a of the lead portion 2 do not occur.

[0024] The planar probe 4 is connected to a power generation unit 10 via a connection cable 9, and due to the electrical action of this power generation unit 10, the planar probe 4 alternates between a conductive state and an insulating state. Therefore, when power is supplied from the power generation unit 10, the planar probe 4 becomes conductive, and current is applied from the planar probe 4 to the lead portion 2. Also, when the power is cut off, the planar probe 4 becomes insulating, and the current from the planar probe 4 to the lead portion 2 is cut off.

[0025] Also, if the planar probe 4 is made of a flexible material, even if the pressing force from above the power semiconductor discrete component 1 is small, the lead portion 2 of the power semiconductor discrete component 1 sufficiently contacts the planar probe 4. However, if the planar probe 42 is made of a non-flexible material, it is necessary to press the lead portion 2 of the power semiconductor discrete component 1 downward with a large force.

[0026] A procedure for applying current to the lead portion 2 of the power semiconductor discrete component 1 using the planar probe 4 having the above configuration will be described below.

[0027] First, when power is supplied from the power generation unit 10, the planar probe 4 changes to a conductive state due to electrical action, and when the laminated member 6 of the movable means 5 is moved downward in a vertical direction toward the planar probe 4 as shown in Figure 3, the lower part 3b of the laminated member 6 of the movable means 5 comes into contact with the surface 2a of the lead portion 2 of the power semiconductor discrete component 1, and the biasing force of the elastic member 8 causes it to come into close contact with the surface 2a of the lead portion 2.

[0028] Then, when the application of current to the lead portion 2 is finished, the power to the power generator 10 is cut off, and the planar probe 4 is changed to an insulated state. The laminated member 6 of the movable means 5 moves upward so that the planar probe 4 is not in contact with the lead portion 2, and the lead portion 2 of the power semiconductor discrete component 1 returns to its initial state.

[0029] Since the movable means 3 is a laminated member 6 formed by stacking thin plates 5a, as shown in Figure 4(b), the tip 6b of the thin plate 6a deforms individually to conform to the shape of the unevenness of the lead 2, and is electrically connected from the power generation unit 10 through the connection cord 9, and current is applied to the lead 2.

[0030] Then, when the application of current to the power semiconductor discrete component 1 ends, the movable means 5 moves upward, and the biasing force of the elastic member 8 is released, causing the planar probe 4 to become non-contact with the lead 2.

[0031] In the above embodiment, the current application device 3 comprises a flexible planar probe 4 that covers the surface 2a of the lead portion 2, and a movable means 5 that presses the planar probe 4 against the surface 2a of the lead portion 2. As a result, current and voltage are applied reliably without damaging the surface 2a of the lead portion 2 of the power semiconductor discrete component 1, and the accuracy of current application to the power semiconductor discrete component 1 is greatly improved.

[0032] Furthermore, the planar probe 4 alternately changes between a conductive state and an insulating state due to electrical action, and when current is supplied to or cut off from the power supply generation unit 10 to the planar probe 4, the planar probe 4 instantly becomes either a conductive state or an insulating state.

[0033] Furthermore, the movable means 5 consists of a laminated member 6 formed by stacking a plurality of the thin plates 6a in the thickness direction, and a holder 7 that supports each of the thin plates 6a of the laminated member 6 so as to be movable in the vertical direction. The elastic member 8 attached to the holder 7 causes the tip 6b of the thin plate 6a of the laminated member 6 to abut against the planar probe 4, causing the planar probe 4 to deform to conform to the irregularities 2b of the lead portion 2 and to come into close contact with the surface 2a of the lead portion 2. As a result, even if a part of the planar probe 4 becomes non-contact due to the influence of the irregularities 2b of the surface 2a of the lead portion 2, the tip 6b of the thin plate 6a will still come into contact with the surface of the planar probe 4, and current from the power semiconductor discrete component 1 will be conducted to the lead 2, ensuring reliable application to the power semiconductor discrete component 1.

[0034] Furthermore, since the planar probe 4 is made of copper or copper alloy with a thickness of 0.1 mm to 0.25 mm, even if the biasing force by the elastic member 8 is small, the planar probe 4 easily conforms to the surface 2a of the lead portion 2, preventing measurement errors, and increasing the strength of the planar probe 4, improving its durability. In particular, even if there are irregularities 2b on the surface 2a of the lead portion 2, the probe 4 conforms to the shape of these irregularities 2b, leaving no areas that do not make contact, and ensuring a reliable electrical connection from the power generation unit 10 through the planar probe 4, thus reliably applying a large current to the discrete component 1. [Industrial applicability]

[0035] The current application device for power semiconductor discrete components in this invention is suitable for applying current to power semiconductor discrete components by eliminating the effects of electrical loss and distance inductance. [Explanation of Symbols]

[0036] 1. Power semiconductor discrete components 2 Lead section 2a surface 2b Unevenness 3 Current application device 4-sided probe 5 Mobility means 6 Laminated member 6a thin plate 6b Tip 7 holders 8 Elastic members 9. Connection Cable 10 Power generation unit

Claims

1. A current application device for applying a large current to a strip-shaped lead portion provided on a power semiconductor discrete component, characterized in that the current application device comprises a flexible planar probe that covers the surface of the lead portion and a movable means for pressing the planar probe against the surface of the lead portion.

2. The current application device for a power semiconductor discrete component according to claim 1, wherein the movable means comprises a laminated member formed by stacking a plurality of thin plates in the thickness direction, and a holder that supports each of the thin plates of the laminated member so as to be movable in the vertical direction, and an elastic member attached to the holder causes the tip of the thin plate of the laminated member to come into contact with the planar probe, so that the planar probe deforms to conform to the irregularities of the lead and comes into close contact with the surface of the lead.

3. The current application device for a power semiconductor discrete component according to claim 1 or claim 2, characterized in that the planar probe is made of a copper material or copper alloy material with a thickness of 0.1 mm to 0.25 mm.

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