Semiconductor equipment

Abstract

This suppresses the delamination of the conductive bonding material that electrically connects the support member and the semiconductor element to be placed. [Solution] The semiconductor device A10 comprises a conductive bonding material 5 that joins a semiconductor element 4 and a support member 1, wherein the distance between the first element side surface 401 and the first edge 501 in a first direction x is greater in a second direction y perpendicular to the first direction than the center of the first element side surface, the distance between the second element side surface 402 and the second edge 502 in a first direction is greater in a second direction than the center of the second element side surface, the distance between the third element side surface 403 and the third edge 503 in a second direction is greater in a first direction than the center of the third element side surface, and the distance between the fourth element side surface 404 and the fourth edge 504 in a second direction is greater in a first direction than the center of the fourth element side surface.

Description

Technical Field

[0001] The present disclosure relates to a semiconductor device and a method for manufacturing the semiconductor device.

Background Art

[0002] Conventionally, various configurations have been proposed for a semiconductor device including a semiconductor element. Patent Document 1 discloses an example of a conventional semiconductor device. The semiconductor device disclosed in the document includes leads, a semiconductor element, and a conductive bonding material. The semiconductor element is rectangular when viewed in the thickness direction of the semiconductor element. The semiconductor element is disposed on the lead. The conductive bonding material electrically connects the lead and the semiconductor element.

[0003] In the above semiconductor device, for example, when joining the semiconductor element to the lead, the conductive bonding material is joined to the lead and the semiconductor element in a high-temperature state. As a result, the lead and the conductive bonding material are in a high-temperature state, but when cooled thereafter, a thermal stress is generated in the conductive bonding material due to the difference in the linear expansion coefficients of the lead and the conductive bonding material. This thermal stress becomes relatively large near the outer periphery of the semiconductor element when viewed in the thickness direction of the semiconductor element. In particular, near the corner portion of the semiconductor element, the thermal stress tends to concentrate on the peripheral portion of the conductive bonding material. When the thermal stress becomes large at the peripheral portion of the conductive bonding material, problems such as cracks occurring in the peripheral portion or the conductive bonding material peeling off from the peripheral portion may occur.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0005] In view of the circumstances described above, one objective of this disclosure is to provide a semiconductor device suitable for suppressing peeling of a conductive bonding material that electrically connects a support member on which a semiconductor element is arranged to the semiconductor element. [Means for solving the problem]

[0006] A semiconductor device provided by a first aspect of this disclosure comprises a support member, a semiconductor element, and a conductive bonding material. The support member has a main surface facing one side in the thickness direction. The semiconductor element has an element main surface and an element back surface facing opposite sides in the thickness direction, and a back surface electrode disposed on the element back surface. The conductive bonding material electrically bonds the main surface of the support member and the back surface electrode. The semiconductor element has a first element side surface facing one side in a first direction perpendicular to the thickness direction and a second element side surface facing the other side, and a third element side surface facing one side in a second direction perpendicular to the thickness direction and the first direction, and a fourth element side surface facing the other side. The conductive bonding material has, when viewed in the thickness direction, a first edge located on one side in the first direction with respect to the side surface of the first element and a second edge located on the other side in the first direction with respect to the side surface of the second element, a third edge located on one side in the second direction with respect to the side surface of the third element and a fourth edge located on the other side in the second direction with respect to the side surface of the fourth element. The first distance in the first direction between the side surface of the first element and the first edge is greater closer to both ends than the center in the second direction of the side surface of the first element. The second distance in the first direction between the side surface of the second element and the second edge is greater closer to both ends than the center in the second direction of the side surface of the second element. The third distance in the second direction between the side surface of the third element and the third edge is greater closer to both ends than the center in the first direction of the side surface of the third element. The fourth distance in the second direction between the side surface of the fourth element and the fourth edge is greater closer to both ends than the center in the first direction of the side surface of the fourth element.

[0007] A method for manufacturing a semiconductor device provided by a second aspect of this disclosure comprises the steps of: preparing a support member having a main surface facing one side in the thickness direction; placing a conductive bonding material on the main surface; arranging a semiconductor element, which has a main surface and a back surface facing opposite sides in the thickness direction, and a back electrode disposed on the back surface of the element, and which is rectangular in shape in the thickness direction, on the support member such that the back electrode is on the conductive bonding material; and heating the conductive bonding material to bond the main surface of the support member and the back electrode with the conductive bonding material. The step of placing the conductive bonding material includes forming extensions in the conductive bonding material that extend outward from positions corresponding to each of the four corners of the semiconductor element in the thickness direction. [Effects of the Invention]

[0008] According to the above configuration, in a semiconductor device, it is possible to suppress peeling of the conductive bonding material that electrically connects the support member on which the semiconductor element is placed to the semiconductor element.

[0009] Other features and advantages of this disclosure will become more apparent from the detailed description below, with reference to the accompanying drawings. [Brief explanation of the drawing]

[0010] [Figure 1] This is a perspective view showing a semiconductor device according to the first embodiment of this disclosure. [Figure 2] This is a perspective view (through the sealing resin) showing a semiconductor device according to the first embodiment of this disclosure. [Figure 3] This is a plan view (through the sealing resin) showing a semiconductor device according to the first embodiment of this disclosure. [Figure 4] This is a cross-sectional view along the line IV-IV in Figure 3. [Figure 5] This is a cross-sectional view along the VV line in Figure 3. [Figure 6] This is a cross-sectional view along the line VI-VI in Figure 3. [Figure 7] This is a magnified view of a portion of Figure 3. [Figure 8] It is a cross-sectional view taken along line VIII-VIII of FIG. 7 [Figure 9] It is a cross-sectional view taken along line IX-IX of FIG. 7 [Figure 10] It is a cross-sectional view taken along line X-X of FIG. 7 [Figure 11] It is a partially enlarged view of FIG. 7 [Figure 12] It is a partially enlarged view of FIG. 7 [Figure 13] It is a partially enlarged view of FIG. 7 [Figure 14] It is a partially enlarged view of FIG. 7 [Figure 15] It is a cross-sectional view showing one step of an example of a method for manufacturing a semiconductor device according to the first embodiment of the present disclosure [Figure 16] It is a cross-sectional view showing the step following FIG. 15 [Figure 17] It is a principal part plan view showing the step following FIG. 15 [Figure 18] It is a cross-sectional view showing the step following FIG. 16 [Figure 19] It is a principal part plan view showing the step following FIG. 16 [Figure 20] It is a plan view similar to FIG. 3 showing a semiconductor device according to the first modification of the first embodiment [Figure 21] It is a partially enlarged view of FIG. 20

Mode for Carrying Out the Invention

[0011] Hereinafter, preferred embodiments of the present disclosure will be specifically described with reference to the drawings

[0012] In the present disclosure, terms such as "first", "second", "third", etc. are merely used as labels and are not necessarily intended to assign an order to their objects

[0013] In this disclosure, "object A is formed on object B" and "object A is formed on object B" include, unless otherwise specified, "object A is directly formed on object B" and "object A is formed on object B with another object interposed between object A and object B." Similarly, "object A is located on object B" and "object A is located on object B" include, unless otherwise specified, "object A is directly located on object B" and "object A is located on object B with another object interposed between object A and object B." Similarly, "object A is located on object B" includes, unless otherwise specified, "object A is located on object B in contact with object B" and "object A is located on object B with another object interposed between object A and object B." Furthermore, unless otherwise specified, "object A overlaps with object B when viewed in a certain direction" includes both "object A overlapping with all of object B" and "object A overlapping with a part of object B."

[0014] Figures 1 to 14 show a semiconductor device according to the first embodiment of the present disclosure. The semiconductor device A10 of this embodiment comprises a first lead 1, a second lead 2, a third lead 3, a semiconductor element 4, a conductive bonding material 5, a plurality of first conductive members 61, second conductive members 62, and a sealing resin 7.

[0015] Figure 1 is a perspective view of semiconductor device A10. Figure 2 is a perspective view of semiconductor device A10. Figure 3 is a plan view of semiconductor device A10. Figure 4 is a cross-sectional view along line IV-IV in Figure 3. Figure 5 is a cross-sectional view along line VV in Figure 3. Figure 6 is a cross-sectional view along line VI-VI in Figure 3. Figure 7 is a partially enlarged view of Figure 3. Figure 8 is a cross-sectional view along line VIII-VIII in Figure 7. Figure 9 is a cross-sectional view along line IX-IX in Figure 7. Figure 10 is a cross-sectional view along line XX in Figure 7. Figures 11 to 14 are partially enlarged views of Figure 7, respectively. Note that in Figures 2 and 3, the sealing resin 7 is transparent for ease of understanding. In Figure 7, the first conductive member 61 and the second conductive member 62 are omitted.

[0016] In describing the semiconductor device A10, three mutually orthogonal directions will be referred to as appropriate. In the illustrated example, the thickness direction of the semiconductor element 4 is called the "thickness direction z". The direction orthogonal to the thickness direction z is called the "first direction x", and the direction orthogonal to both the thickness direction z and the first direction x is called the "second direction y".

[0017] The first lead 1, the second lead 2, and the third lead 3 are formed, for example, by punching or bending a metal sheet. The constituent materials of the first lead 1, the second lead 2, and the third lead 3 are, for example, either Cu (copper) or Ni (nickel), or alloys thereof.

[0018] The first lead 1 is a component on which the semiconductor element 4 is mounted. As shown in Figures 1 to 6, the first lead 1 has an element bonding portion 11, a terminal extension portion 12, a protruding portion 13, and a connecting portion 14. The element bonding portion 11 has a main surface 11a and a back surface 11b. The main surface 11a faces one side in the thickness direction z, and the back surface 11b faces the other side in the thickness direction z. The semiconductor element 4 is mounted on the main surface 11a. The shape of the element bonding portion 11 is not particularly limited, and in the illustrated example, it is rectangular (or substantially rectangular) when viewed in the thickness direction z. Also, as shown in Figures 4 to 6, in this embodiment, the back surface 11b is exposed from the sealing resin 7. The back surface 11b is the part that is joined by a bonding material such as solder when mounting the semiconductor device A10 to a circuit board or the like (not shown). The first lead 1 is an example of a "support member". In this disclosure, the "support member" is also referred to as a "base" or "substrate".

[0019] As shown in Figures 3 to 6, the element bonding portion 11 of this embodiment has a locking portion 151. The locking portion 151 is a portion that has a shape that protrudes from the peripheral edge of the element bonding portion 11 in a first direction x or a second direction y. The locking portion 151 is provided to increase the holding force of the element bonding portion 11 by the sealing resin 7 by engaging with a part of the sealing resin 7, for example.

[0020] As shown in Figures 1 to 3 and Figure 5, the terminal extension portion 12 is a part that extends from the element bonding portion 111 to the other side in the second direction y (the side where the pad portion 21 and pad portion 31 described later are located). The shape of the terminal extension portion 12 is not particularly limited, and in the illustrated example, the terminal extension portion 12 has a base portion 121, a bent portion 122, and a tip portion 123.

[0021] The base portion 121 extends from the element bonding portion 11 to the other side in the second direction y and has a shape along the second direction y. The bent portion 122 is connected to the tip of the base portion 121 in the second direction y and is a bent portion that is viewed in the first direction x and is bent to one side in the thickness direction z (upper side in Figure 5). The tip portion 123 is connected to the bent portion 122 and extends from the bent portion 122 along the second direction y to the other side in the second direction y. In the illustrated example, a part of the tip portion 123 protrudes from the sealing resin 7.

[0022] As shown in Figures 1 to 3 and Figure 5, the protruding portion 13 is located on one side of the element bonding portion 11 in the second direction y. The shape of the protruding portion 13 is not particularly limited, and in the illustrated example, it is an elongated rectangle (or approximately elongated rectangle) with the first direction x as the longitudinal direction when viewed in the thickness direction z, and most of it is exposed from the sealing resin 7.

[0023] The connecting portion 14 is the part that connects the element bonding portion 11 and the protruding portion 13. As shown in Figure 3, the connecting portion 14 in the illustrated example has a through hole 141. The through hole 141 penetrates the connecting portion 14 in the thickness direction z.

[0024] The second lead 2 is a member to which a plurality of first conductive members 61, described later, are joined. As shown in Figure 3, the second lead 2 is spaced apart from the first lead 1 when viewed in the thickness direction z. As shown in Figures 1 to 3 and Figure 6, the second lead 2 of this embodiment has a pad portion 21 and a terminal portion 22. A plurality of first conductive members 61 are joined to the pad portion 21. The shape of the pad portion 21 is not particularly limited, and in the illustrated example, it is rectangular (or substantially rectangular) when viewed in the thickness direction z. Also, as shown in Figure 6, in this embodiment, the pad portion 21 is covered with a sealing resin 7.

[0025] As shown in Figures 1 to 3 and Figure 6, in this embodiment, the pad portion 21 is located on the other side of the second direction y relative to the element bonding portion 11 when viewed in the thickness direction z, and on one side of the terminal-shaped extension portion 12 in the first direction x. Furthermore, the pad portion 21 is located on one side of the thickness direction z relative to the element bonding portion 11 (upper side in Figure 6).

[0026] As shown in Figures 1 to 3 and Figure 6, the terminal portion 22 is a part that extends from the pad portion 211 to the other side in the second direction y. The terminal portion 22 is used, for example, when mounting the semiconductor device A10 on a circuit board or the like. The shape of the terminal portion 22 is not particularly limited, and in the illustrated example, the terminal portion 22 has a base portion 221, a bent portion 222, and a tip portion 223.

[0027] The root portion 221 extends from the pad portion 21 to the other side in the second direction y and has a shape along the second direction y. A part of the root portion 221 is exposed from the sealing resin 7. The bent portion 222 is connected to the tip of the root portion 221 in the second direction y and is a bent portion that is viewed in the first direction x and is bent to the other side in the thickness direction z (the lower side in Figure 6). The tip portion 223 is connected to the bent portion 222 and extends from the bent portion 222 along the second direction y to the other side in the second direction y.

[0028] The third lead 3 is the member to which the second conductive member 62, described later, is joined. As shown in Figure 3, the third lead 3 is spaced apart from the first lead 1 and the second lead 2 when viewed in the thickness direction z. As shown in Figures 1 to 4, the third lead 3 in this embodiment has a pad portion 31 and a terminal portion 32. The second conductive member 62 is joined to the pad portion 31. The shape of the pad portion 31 is not particularly limited, and in the illustrated example, it is rectangular (or substantially rectangular) when viewed in the thickness direction z. As shown in Figure 4, in this embodiment, the pad portion 31 is covered with a sealing resin 7.

[0029] As shown in Figures 1 to 4, the terminal portion 32 is a part that extends from the pad portion 31 to the other side in the second direction y. The terminal portion 32 is used, for example, when mounting the semiconductor device A10 on a circuit board or the like. The shape of the terminal portion 32 is not particularly limited, and in the illustrated example, the terminal portion 32 has a base portion 321, a bent portion 322, and a tip portion 323.

[0030] The root portion 321 extends from the pad portion 31 to the other side in the second direction y and has a shape along the second direction y. A part of the root portion 321 is exposed from the sealing resin 7. The bent portion 322 is connected to the tip of the root portion 321 in the second direction y and is a bent portion that is viewed in the first direction x and is bent to the other side in the thickness direction z (the lower side in Figure 4). The tip portion 323 is connected to the bent portion 322 and extends from the bent portion 322 along the second direction y to the other side in the second direction y.

[0031] The semiconductor element 4 is an electronic component that forms the functional core of the semiconductor device A10 and is made of a semiconductor material. Such semiconductor materials include Si (silicon), SiC (silicon carbide), and GaAs (gallium arsenide), but this disclosure is not limited to these. The semiconductor element 4 is, for example, a power semiconductor chip such as a MOSFET (Metal Oxide Semiconductor Field Effect Transistor). In this embodiment, the case where the semiconductor element 4 is a MOSFET is shown, but it is not limited to this and may be other transistors such as IGBTs (Insulated Gate Bipolar Transistors), or diodes such as Schottky barrier diodes or fast recovery diodes.

[0032] As shown in Figures 1 to 10, the semiconductor element 4 of this embodiment has an element main surface 4a, an element back surface 4b, a first element side surface 401, a second element side surface 402, a third element side surface 403, a fourth element side surface 404, a first main surface electrode 41, a second main surface electrode 42, and a back surface electrode 43.

[0033] The semiconductor element 4 is rectangular in shape when viewed in the thickness direction z. The main surface 4a of the element is the surface facing one side in the thickness direction z (the upper side in Figures 1, 2, and 4). The first lead 1B is the surface facing the other side opposite to the main surface 4a of the element in the thickness direction z (the lower side in Figures 1, 2, and 4). The main surface 4a of the element faces the same side as the main surface 11a of the element bonding portion 11 in the thickness direction z. Therefore, the back surface 4b of the element faces the main surface 11a.

[0034] The first element side 401 and the second element side 402 are spaced apart from each other in the first direction x. The first element side 401 faces one side of the first direction x. The second element side 402 faces the other side of the first direction x. The third element side 403 and the fourth element side 404 are connected to both the first element side 401 and the second element side 402, respectively. The third element side 403 and the fourth element side 404 are spaced apart from each other in the second direction y. The third element side 403 faces one side of the second direction y. The fourth element side 404 faces the other side of the second direction y.

[0035] As shown in Figures 1 to 3, the first main surface electrode 41 and the second main surface electrode 42 are arranged on the main surface 4a of the element. In this embodiment, the first main surface electrode 41 is the source electrode and is used as an input / output terminal. The first main surface electrode 41 covers most of the main surface 4a of the element. The second main surface electrode 42 is the gate electrode and is the electrode to which the gate voltage is applied to the semiconductor element 4 as a switching element. In the illustrated example, the second main surface electrode 42 is smaller than the first main surface electrode 41. Furthermore, the second main surface electrode 42 is positioned biased toward the first direction x other side (left side in Figure 3) of the main surface 4a of the element.

[0036] As shown in Figures 4 to 6 and Figures 8 to 10, the back electrode 43 is located on the back surface 4b of the element. In this embodiment, the back electrode 43 is a drain electrode and, together with the first main surface electrode 41, is used as an input / output terminal. The back electrode 43 covers the entire surface (or nearly the entire surface) of the back surface 4b of the element.

[0037] The back electrode 43 is electrically bonded to the main surface 11a (element bonding portion 11, first lead 1) via a conductive bonding material 5. The conductive bonding material 5 electrically connects the main surface 11a (element bonding portion 11) and the back electrode 43. The constituent material of the conductive bonding material 5 includes, for example, Ag (silver). In semiconductor device A10, the conductive bonding material 5 is calcined silver. The conductive bonding material 5 may also be composed of calcined metal containing a metal other than Ag, a metal paste material, or solder.

[0038] In this embodiment, as shown in Figures 3 and 8 to 10, a plating layer 19 is formed on the main surface 11a of the element bonding portion 11 (first lead 1). The plating layer 19 is a metal layer formed by plating on a metal plate such as Cu that constitutes the first lead 1. The plating layer 19 is formed in a region that overlaps with the conductive bonding material 5 when viewed in the thickness direction z. In this embodiment, the plating layer 19 covers most of the main surface 11a. The constituent material of the plating layer 19 is not particularly limited and can be, for example, Ag or Ni. Note that the element bonding portion 11 (first lead 1) may be configured in which no plating layer 19 is formed on the main surface 11a.

[0039] As shown in Figures 7 to 10, the conductive bonding material 5 is arranged in a rectangular region that overlaps with the semiconductor element 4 and around the semiconductor element 4 when viewed in the thickness direction z. As will be described in detail later, the conductive bonding material 5 is arranged to extend further outward from the semiconductor element 4 at the four corners of the semiconductor element 4 than at other locations when viewed in the thickness direction z.

[0040] As shown in Figure 7, the conductive bonding material 5 has a first edge 501, a second edge 502, a third edge 503, and a fourth edge 504. The first edge 501 is located on one side in the first direction x relative to the first element side surface 401 of the semiconductor element 4 when viewed in the thickness direction z. The second edge 502 is located on the other side in the first direction x relative to the second element side surface 402 when viewed in the thickness direction z. The third edge 503 is located on one side in the second direction y relative to the third element side surface 403 when viewed in the thickness direction z, and the fourth edge 504 is located on the other side in the second direction y relative to the fourth element side surface 404.

[0041] In this embodiment, the first edge 501 includes a first edge first part 501A, a first edge second part 501B, and a first edge third part 501C. The first edge first part 501A extends in the second direction y. The first edge second part 501B connects to the first edge first part 501A and is located outside the first edge first part 501A in the first direction x and closer to the third edge 503 in the second direction y. The first edge third part 501C connects to the first edge first part 501A and is located outside the first edge first part 501A in the first direction x and closer to the fourth edge 504 in the second direction y. As a result, as shown in Figures 7, 11, and 12, the distance (first distance D1) between the first element side surface 401 and the first edge 501 in the first direction x is greater closer to both ends than to the center in the second direction y of the first element side surface 401. For the sake of illustration and explanation, the first part 501A of the first edge is shown as a straight line extending along the second direction y, but it may also include a curved portion.

[0042] As shown in Figure 7, the second edge 502 includes the second edge first part 502A, the second edge second part 502B, and the second edge third part 502C. The second edge first part 502A extends in the second direction y. The second edge second part 502B connects to the second edge first part 502A and is located outside the second edge first part 502A in the first direction x and closer to the third edge 503 in the second direction y. The second edge third part 502C connects to the second edge first part 502A and is located outside the second edge first part 502A in the first direction x and closer to the fourth edge 504 in the second direction y. As a result, as shown in Figures 7, 13, and 14, the distance (second distance D2) between the second element side surface 402 and the second edge 502 in the first direction x is greater closer to both ends than to the center in the second direction y of the second element side surface 402. For the sake of illustration and explanation, the first part 502A of the second edge is shown as a straight line extending along the second direction y, but it may also include a curved portion.

[0043] The third edge 503 includes the third edge first part 503A, the third edge second part 503B, and the third edge third part 503C. The third edge first part 503A extends in the first direction x. The third edge second part 503B connects to the third edge first part 503A and is located outside the third edge first part 503A in the second direction y and closer to the first edge 501 in the first direction x. The third edge third part 503C connects to the third edge first part 503A and is located outside the third edge first part 503A in the second direction y and closer to the second edge 502 in the first direction x. As a result, as shown in Figures 7, 11, and 13, the distance between the third element side surface 403 and the third end edge 503 in the second direction y (third distance D3) is greater closer to both ends than to the center in the first direction x of the third element side surface 403. For the sake of illustration and explanation, the first part 503A of the third end edge is shown as a straight line extending along the first direction x, but it may also include a curved portion.

[0044] The fourth edge 504 includes a fourth edge first part 504A, a fourth edge second part 504B, and a fourth edge third part 504C. The fourth edge first part 504A extends in a first direction x. The fourth edge second part 504B connects to the fourth edge first part 504A and is located outside the fourth edge first part 504A in a second direction y and closer to the first edge 501 in a first direction x. The fourth edge third part 504C connects to the fourth edge first part 504A and is located outside the fourth edge first part 504A in a second direction y and closer to the second edge 502 in a first direction x. As a result, as shown in Figures 7, 12, and 14, the distance between the fourth element side surface 404 and the fourth edge 504 in the second direction y (fourth distance D4) is greater closer to both ends than to the center in the first direction x of the fourth element side surface 404. For the sake of illustration and explanation, the first part 504A of the fourth edge is shown as a straight line extending along the first direction x, but it may also include a curved portion.

[0045] In this embodiment, as shown in Figure 11, the first edge second portion 501B has a first edge first inclined portion 501d. The first edge first inclined portion 501d connects to the first edge first portion 501A when viewed in the thickness direction z and extends in a third direction v that intersects both the first direction x and the second direction y. The angle between the first direction x and the third direction v, and the angle between the second direction y and the third direction v are not particularly limited, but in this embodiment they are both 45°. As shown in Figure 12, the first edge third portion 501C has a first edge second inclined portion 501e. The first edge second inclined portion 501e connects to the first edge first portion 501A when viewed in the thickness direction z and extends in a fourth direction w that intersects both the first direction x and the second direction y. The angle between the first direction x and the fourth direction w, and the angle between the second direction y and the fourth direction w are not particularly limited, and in this embodiment, both are 45°. Also, in this embodiment, the angle between the third direction v and the fourth direction w is 90°.

[0046] As shown in Figure 13, the second edge second portion 502B has a second edge first inclined portion 502d. The second edge first inclined portion 502d connects to the second edge first portion 502A when viewed in the thickness direction z and extends in the fourth direction w. As shown in Figure 14, the second edge third portion 502C has a second edge second inclined portion 502e. The second edge second inclined portion 502e connects to the second edge first portion 502A when viewed in the thickness direction z and extends in the third direction v.

[0047] As shown in Figure 11, the third edge second portion 503B has a third edge first inclined portion 503d. The third edge first inclined portion 503d connects to the third edge first portion 503A when viewed in the thickness direction z and extends in the third direction v. As shown in Figure 13, the third edge third portion 503C has a third edge second inclined portion 503e. The third edge second inclined portion 503e connects to the third edge first portion 503A when viewed in the thickness direction z and extends in the fourth direction w.

[0048] As shown in Figure 12, the fourth edge second portion 504B has a fourth edge first inclined portion 504d. The fourth edge first inclined portion 504d connects to the fourth edge first portion 504A when viewed in the thickness direction z and extends in the fourth direction w. As shown in Figure 14, the third edge third portion 503C has a third edge second inclined portion 503e. The third edge second inclined portion 503e connects to the third edge first portion 503A when viewed in the thickness direction z and extends in the fourth direction w.

[0049] As shown in Figures 7 to 10, in this embodiment, the conductive bonding material 5 has an overlapping portion 50, a first intermediate portion 51, a second intermediate portion 52, a third intermediate portion 53, a fourth intermediate portion 54, a first extension portion 55, a second extension portion 56, a third extension portion 57, and a fourth extension portion 58. The overlapping portion 50 is the portion that overlaps with the entire semiconductor element 4 when viewed in the thickness direction z. The first intermediate portion 51, the second intermediate portion 52, the third intermediate portion 53, the fourth intermediate portion 54, the first extension portion 55, the second extension portion 56, the third extension portion 57, and the fourth extension portion 58 are all located outside the overlapping portion 50 when viewed in the thickness direction z, and each is connected to the overlapping portion 50.

[0050] The first intermediate portion 51 is located between the first element side surface 401 and the first edge first portion 501A of the semiconductor element 4, when viewed in the thickness direction z. The second intermediate portion 52 is located between the second element side surface 402 and the second edge first portion 502A, when viewed in the thickness direction z. The third intermediate portion 53 is located between the third element side surface 403 and the third edge first portion 503A, when viewed in the thickness direction z. The fourth intermediate portion 54 is located between the fourth element side surface 404 and the fourth edge first portion 504A, when viewed in the thickness direction z.

[0051] As shown in Figures 7 and 11, the first extension 55 extends in the third direction v from the first corner 451, which is the boundary between the first element side surface 401 and the third element side surface 403. The first extension 55 includes the first edge first inclined portion 501d and the third edge first inclined portion 503d. As shown in Figures 7 and 12, the second extension 56 extends in the fourth direction w from the second corner 452, which is the boundary between the first element side surface 401 and the fourth element side surface 404. The second extension 56 includes the first edge second inclined portion 501e and the fourth edge first inclined portion 504d. As shown in Figures 7 and 13, the third extension 57 extends in the fourth direction w from the third corner 453, which is the boundary between the second element side surface 402 and the third element side surface 403. The third extension 57 includes a second edge first inclined portion 502d and a third edge second inclined portion 503e. As shown in Figures 7 and 14, the fourth extension 58 extends in the third direction v from the fourth corner 454, which is the boundary between the second element side surface 402 and the fourth element side surface 404. The fourth extension 58 includes a second edge second inclined portion 502e and a fourth edge second inclined portion 504e.

[0052] For convenience in the drawings, the boundaries between the first extension 55 and the first intermediate section 51 and third intermediate section 53 connected thereto are shown as solid lines in Figures 7, 11, etc. However, the boundary between the first extension 55 and the first intermediate section 51 or third intermediate section 53 is not limited to a geometrically clear boundary, but may be connected by a gentle curved surface. Similarly, the boundary between the second extension 56 and the first intermediate section 51 or fourth intermediate section 54, the boundary between the third extension 57 and the second intermediate section 52 or third intermediate section 53, and the boundary between the fourth extension 58 and the second intermediate section 52 or fourth intermediate section 54 are not limited to geometrically clear boundaries, but may also be connected by a gentle curved surface.

[0053] The distance from the first corner 451 to the tip of the first extension 55 in the third direction v (first extension length L1), as shown in Figures 7 and 11, is, for example, 0.01 to 1 times the length of the diagonal of the semiconductor element 4 (hereinafter referred to as "diagonal length Ld"). Similarly, the distance from the second corner 452 to the tip of the second extension 56 in the fourth direction w (second extension length L2), as shown in Figures 7 and 12, is, for example, 0.01 to 1 times the diagonal length Ld. Likewise, the distance from the third corner 453 to the tip of the third extension 57 in the fourth direction w (third extension length L3), as shown in Figures 7 and 13, and the distance from the fourth corner 454 to the tip of the fourth extension 58 in the third direction v (fourth extension length L4), as shown in Figures 7 and 14, are, respectively, 0.01 to 1 times the diagonal length Ld. The first extension length L1, second extension length L2, third extension length L3, fourth extension length L4, and diagonal length Ld are not particularly limited. In this embodiment, the first extension length L1, second extension length L2, third extension length L3, and fourth extension length L4 are each about 50 μm to 5000 μm, and the diagonal length Ld is about 50 μm to 15000 μm. Here, the smaller the size of the semiconductor element 4 (diagonal length Ld), the larger the ratio of each of the first extension length L1, second extension length L2, third extension length L3, and fourth extension length L4 to the diagonal length Ld. The reason for this is as follows: The size of the semiconductor element 4 (diagonal length Ld) can vary greatly depending on the type of semiconductor element 4, etc. On the other hand, the degree of variation in the first extension length L1, second extension length L2, third extension length L3, and fourth extension length L4 mentioned above is smaller than the degree of variation in the size (diagonal length Ld) of the semiconductor element 4.

[0054] As shown in Figures 8 to 10, the thickness of each of the first extension portion 55, the second extension portion 56, the third extension portion 57, and the fourth extension portion 58 is greater than the thickness of any of the first intermediate portion 51, the second intermediate portion 52, the third intermediate portion 53, and the fourth intermediate portion 54. Furthermore, in this embodiment, the thickness of each of the first extension portion 55, the second extension portion 56, the third extension portion 57, and the fourth extension portion 58 is 2 / 3 times or less the thickness of the semiconductor element 4.

[0055] Multiple first conductive members 61 are used to connect the first main surface electrode 41 of the semiconductor element 4 with the second lead 2. The specific configuration of the first conductive members 61 is not particularly limited and can include, for example, wires or ribbons made of metal. Examples of metals that make up the first conductive members 61 include metals such as Au (gold) and Al (aluminum) and alloys thereof. In this embodiment, the first conductive member 61 is a wire made of Al or an Al alloy. In this case, the diameter of the first conductive member 61 is larger than the diameter of the second conductive member 62.

[0056] As shown in Figures 1 to 3 and Figure 6, the first conductive member 61 has a first bonding portion 611 and a second bonding portion 612. The first bonding portion 611 is bonded to the first main surface electrode 41 of the semiconductor element 4. The second bonding portion 612 is bonded to the pad portion 21 of the second lead 2. In this embodiment, a case in which two first conductive members 61 are provided is illustrated, but a configuration with one or three or more first conductive members 61 may also be used.

[0057] The second conductive member 62 is used to connect the second main surface electrode 42 of the semiconductor element 4 with the third lead 3. The specific configuration of the second conductive member 62 is not particularly limited and can be, for example, a wire or ribbon made of metal. Examples of metals that make up the second conductive member 62 include metals such as Au and Al, and alloys thereof. In this embodiment, the second conductive member 62 is a wire made of Au.

[0058] As shown in Figures 1 to 4, the second conductive member 62 has a first bonding portion 621 and a second bonding portion 622. The first bonding portion 621 is bonded to the second main surface electrode 42 of the semiconductor element 4. The second bonding portion 622 is bonded to the pad portion 31 of the third lead 3.

[0059] The sealing resin 7 covers a portion each of the first lead 1, the second lead 2, and the third lead 3, the semiconductor element 4, the multiple first conductive members 61, and the second conductive members 62. The sealing resin 7 is a thermosetting synthetic resin having electrical insulating properties. In this embodiment, the sealing resin 7 is a black epoxy resin, and may contain fillers as appropriate.

[0060] As shown in Figures 1, 4 to 6, the sealing resin 7 has a resin main surface 71, a resin back surface 72, and resin side surfaces 731 to 734. The resin main surface 71 and the resin back surface 72 face opposite each other in the thickness direction z and are spaced apart. The resin main surface 71 faces the same direction as the element main surface 4a, and the resin back surface 72 faces the same direction as the element back surface 4b. Each of the resin side surfaces 731 to 734 is sandwiched between the resin main surface 71 and the resin back surface 72. The resin side surface 731 faces one side of the first direction x. The resin side surface 732 faces the other side of the first direction x. The resin side surface 733 faces one side of the second direction y. The resin side surface 734 faces the other side of the second direction y. In this embodiment, the back surface 11b of the element bonding portion 11 is exposed from the resin back surface 72. Also, the protruding portion 13 protrudes from the resin side surface 733. Furthermore, terminal-shaped extensions 12, terminal portions 22, and terminal portions 32 protrude from the resin side surface 734.

[0061] Next, the manufacturing method of the semiconductor device A10 will be described below with reference to Figures 15 to 19. Figures 15, 16, and 18 are cross-sectional views showing one step in the manufacturing method of the semiconductor device A10, and are similar to the cross-sectional view shown in Figure 8. Figures 17 and 19 show one step in the manufacturing method of the semiconductor device A10, and are plan views similar to the partially enlarged plan view shown in Figure 7.

[0062] First, prepare the first lead 1 as shown in Figure 15. Here, prepare a lead frame having the shape of the first lead 1 shown in Figure 15, the second lead 2, and the third lead 3. In this embodiment, a plating layer 19 is formed on the main surface 11a of the first lead 1 (element bonding portion 11).

[0063] Next, as shown in Figures 16 and 17, a conductive bonding material 5' is placed on the main surface 11a of the first lead 1 (element bonding portion 11). The conductive bonding material 5' is placed on the main surface 11a by, for example, applying a paste-like conductive metal material (e.g., Ag paste) using a dispenser. In the illustrated example, the conductive bonding material 5' placed on the main surface 11a has a central portion 50' and extension portions 55' to 58'. The central portion 50' corresponds to a part of the center of the area where the semiconductor element 4 will be placed in a later step. In Figure 17, the position where the semiconductor element 4 will be placed is shown by a dashed line. The extension portions 55' to 58' extend outward from the semiconductor element 4 from positions corresponding to each of the four rectangular corners of the semiconductor element 4. In the example shown in Figure 17, the extension portions 55' and 58' extend linearly along the third direction v and can be formed in a series using a dispenser. Furthermore, the extensions 56' and 57' extend linearly along the fourth direction w and can be formed in a single unit by a dispenser. Note that the size and shape of the central portion 50' are not limited to the illustrated example and can be changed as appropriate.

[0064] Next, the semiconductor element 4 is prepared and placed on the conductive bonding material 5'. The semiconductor element 4 is rectangular in shape when viewed in the thickness direction z, and as described above, it has a main element surface 4a, a back surface 4b, a first element side surface 401, a second element side surface 402, a third element side surface 403, a fourth element side surface 404, a first main surface electrode 41, a second main surface electrode 42, and a back surface electrode 43. Here, the back surface electrode 43 is placed on the conductive bonding material 5'. Next, the conductive bonding material 5' is heated (fired) and the main surface 11a and the back surface electrode 43 are joined by the conductive bonding material 5, as shown in Figures 18 and 19. When the conductive bonding material 5' is heated (fired), the portion of the conductive bonding material 5' that overlaps with the semiconductor element 4 in the thickness direction z (parts of the central part 50' and the extended parts 55'~58') is pushed and spread onto the main surface 11a, and protrudes from each of the element side surfaces 401~404 of the semiconductor element 4 when viewed in the thickness direction z. After cooling, a conductive bonding material 5 is formed having a polymerized portion 50, a first intermediate portion 51, a second intermediate portion 52, a third intermediate portion 53, a fourth intermediate portion 54, a first extension portion 55, a second extension portion 56, a third extension portion 57, and a fourth extension portion 58.

[0065] Subsequently, multiple first conductive members 61 and second conductive members 62 are joined together. Next, a sealing resin 7 is formed by molding. Then, the lead frame is cut as appropriate to separate the first lead 1, second lead 2, and third lead 3 from each other. By going through the above steps, the semiconductor device A10 shown in Figures 1 to 14 is manufactured.

[0066] Next, the effects and advantages of this embodiment will be described.

[0067] The semiconductor device A10 comprises a first lead 1, a semiconductor element 4, and a conductive bonding material 5. The conductive bonding material 5 has a first edge 501, a second edge 502, a third edge 503, and a fourth edge 504. The first edge 501 is located on one side in the first direction x relative to the first element side surface 401 when viewed in the thickness direction z. The second edge 502 is located on the other side in the first direction x relative to the second element side surface 402 when viewed in the thickness direction z. The third edge 503 is located on one side in the second direction y relative to the third element side surface 403 when viewed in the thickness direction z. The fourth edge 504 is located on the other side in the second direction y relative to the fourth element side surface 404 when viewed in the thickness direction z. The distance (first distance D1) between the first element side surface 401 and the first edge 501 in the first direction x is greater closer to both ends than to the center in the second direction y of the first element side surface 401. The distance between the second element side surface 402 and the second edge 502 in the first direction x (second distance D2) is greater closer to both ends than to the center in the second direction y of the second element side surface 402. The distance between the third element side surface 403 and the third edge 503 in the second direction y (third distance D3) is greater closer to both ends than to the center in the first direction x of the third element side surface 403. The distance between the fourth element side surface 404 and the fourth edge 504 in the second direction y (fourth distance D4) is greater closer to both ends than to the center in the first direction x of the fourth element side surface 404.

[0068] With this configuration, the conductive bonding material 5 is positioned to extend further outward from the semiconductor element 4 near its four corners than other parts when viewed in the thickness direction z. This makes it possible to suppress thermal stress in the conductive bonding material 5 that may occur during the manufacturing process of the semiconductor device A10 due to the difference in the coefficient of thermal expansion between the first lead 1 and the conductive bonding material 5, near the four corners of the semiconductor element 4. Therefore, according to this embodiment, it is possible to suppress peeling of the conductive bonding material 5 that electrically bonds the first lead 1 and the semiconductor element 4.

[0069] The conductive bonding material 5 has a first intermediate portion 51, a second intermediate portion 52, a third intermediate portion 53, a fourth intermediate portion 54, a first extension portion 55, a second extension portion 56, a third extension portion 57, and a fourth extension portion 58. The first extension portion 55 extends in the third direction v from the first corner portion 451, which is the boundary between the first element side surface 401 and the third element side surface 403. The second extension portion 56 extends in the fourth direction w from the second corner portion 452, which is the boundary between the first element side surface 401 and the fourth element side surface 404. The third extension portion 57 extends in the fourth direction w from the third corner portion 453, which is the boundary between the second element side surface 402 and the third element side surface 403. The fourth extension portion 58 extends in the third direction v from the fourth corner portion 454, which is the boundary between the second element side surface 402 and the fourth element side surface 404. Therefore, when viewed in the thickness direction z, the first extension portion 55 and the fourth extension portion 58 extending from one diagonal of the semiconductor element 4 extend in the same direction (third direction v). Similarly, the second extension portion 56 and the third extension portion 57 extending from the other diagonal of the semiconductor element 4 also extend in the same direction (fourth direction w). With this configuration, the conductive bonding material 5 can be easily formed by applying the conductive bonding material 5 in a certain direction, for example.

[0070] In the conductive bonding material 5 of this embodiment, the first extension length L1 of the first extension portion 55 from the corner (first corner 451) of the semiconductor element 4, the second extension length L2 of the second extension portion 56 from the corner (second corner 452) of the semiconductor element 4, the third extension length L3 of the third extension portion 57 from the corner (third corner 453) of the semiconductor element 4, and the fourth extension length L4 of the fourth extension portion 58 from the corner (fourth corner 454) of the semiconductor element 4 are, when viewed in the thickness direction z, 0.01 to 1 times the diagonal length Ld of the semiconductor element 4. With this configuration, the peripheral edge of the conductive bonding material 5 is positioned appropriately away from the four corners of the semiconductor element 4. Therefore, it is possible to appropriately suppress delamination caused by thermal stress in the conductive bonding material 5.

[0071] When forming the conductive bonding material 5, if the method of application using a dispenser is used, for example, even if the size of the semiconductor element 4 is changed, the first extension portion 55, second extension portion 56, third extension portion 57, and fourth extension portion 58 of a size appropriately suited to the semiconductor element 4 after the size change can be easily formed.

[0072] In the conductive bonding material 5 of this embodiment, the thickness of each of the first extension portion 55, second extension portion 56, third extension portion 57, and fourth extension portion 58 is greater than the thickness of any of the first intermediate portion 51, second intermediate portion 52, third intermediate portion 53, and fourth intermediate portion 54. With this configuration, the volume occupied by the first extension portion 55, second extension portion 56, third extension portion 57, and fourth extension portion 58 is relatively larger than that of the other parts. This means that the influence of thermal stress on the first extension portion 55, second extension portion 56, third extension portion 57, and fourth extension portion 58 located near the four corners of the semiconductor element 4 can be expected to be reduced.

[0073] The thickness of each of the first extension portion 55, the second extension portion 56, the third extension portion 57, and the fourth extension portion 58 is 2 / 3 times or less the thickness of the semiconductor element 4. With this configuration, it is prevented that the conductive bonding material 5 (first extension portion 55, second extension portion 56, third extension portion 57, or fourth extension portion 58) will not improperly conduct to the first main surface electrode 41, etc., which is located on the main surface 4a side of the semiconductor element 4.

[0074] A plating layer 19 is formed on the main surface 11a of the element bonding portion 11 (first lead 1) in a region that overlaps with the conductive bonding material 5 when viewed in the thickness direction z. With this configuration, when forming the conductive bonding material 5 on the main surface 11a, the shape of the conductive bonding material 5 can be expected to be stabilized, for example, by changes in the wettability of the surface on the element bonding portion 11 side.

[0075] Figures 20 and 21 show a semiconductor device according to a modified example of the first embodiment. Figure 20 is a plan view similar to Figure 3 shown in the above embodiment. Figure 21 is a partially enlarged view of Figure 20. In the drawings from Figure 20 onward, elements that are the same as or similar to semiconductor device A10 in the above embodiment are denoted by the same reference numerals as in the above embodiment, and their descriptions are omitted as appropriate.

[0076] In this modified example of semiconductor device A11, the shape of a part of the conductive bonding material 5 differs from that of semiconductor device A10 in the above embodiment. In this modified example, the shape of the conductive bonding material 5 near the four corners of the semiconductor element 4, viewed in the thickness direction z, differs from the configuration shown in Figure 7.

[0077] As shown in Figure 21, in this modified example, the shapes of the second part 501B and the third part 501C of the first edge are arc-shaped. Similarly, the shapes of the second part 502B and the third part 502C of the second edge, the second parts 503B and 503 of the third edge, and the second part 504B and the third part 504C of the fourth edge are arc-shaped.

[0078] The conductive bonding material 5 has extensions 551, 561, 571, and 581. Extension 551 includes a first edge second part 501B and a third edge second part 503B, and protrudes outward from the semiconductor element 4 near the first corner 451 of the semiconductor element 4 when viewed in the thickness direction z. Extension 561 includes a first edge third part 501C and a fourth edge second part 504B, and protrudes outward from the semiconductor element 4 near the second corner 452 of the semiconductor element 4 when viewed in the thickness direction z. Extension 571 includes a second edge second part 502B and a first edge third part 501C, and protrudes outward from the semiconductor element 4 near the third corner 453 of the semiconductor element 4 when viewed in the thickness direction z. The extension portion 581 includes the second end edge third portion 502C and the fourth end edge third portion 504C, and protrudes outward from the semiconductor element 4 near the fourth corner 454 of the semiconductor element 4 when viewed in the thickness direction z.

[0079] In this modified example, the conductive bonding material 5 is positioned to extend outward from the semiconductor element 4 at the four corners of the semiconductor element 4, when viewed in the thickness direction z, compared to other parts. This allows for the suppression of thermal stress in the conductive bonding material 5 that may occur during the manufacturing process of the semiconductor device A10 due to the difference in the coefficient of thermal expansion between the first lead 1 and the conductive bonding material 5, at the four corners of the semiconductor element 4. Therefore, this modified example can suppress delamination of the conductive bonding material 5 that electrically bonds the first lead 1 and the semiconductor element 4. In addition, within the same configuration as the semiconductor device A10 of the above embodiment, the same effects and advantages as in the above embodiment are achieved.

[0080] The semiconductor device relating to this disclosure is not limited to the embodiments described above. The specific configuration of each part of the semiconductor device relating to this disclosure can be modified in various ways.

[0081] In the above embodiment, the case in which the support member on which the semiconductor element 4 is arranged is described as a first lead 1 made of a metal plate, but the configuration of the support member is not particularly limited. For example, a DBC (Direct Bonded Copper) substrate may be used instead of the first lead 1. When a DBC substrate is used, peeling of the conductive bonding material 5 that electrically bonds the DBC substrate and the semiconductor element 4 can be suppressed.

[0082] In the above embodiments, semiconductor devices A10 and A11 equipped with one semiconductor element 4 were described, but this disclosure can be applied to semiconductor devices equipped with multiple semiconductor elements. Regarding the formation of the conductive bonding material 5, various methods can be employed instead of the method of application using the dispenser described above. For example, a mask may be used to arrange the conductive bonding material 5 of a predetermined shape on the main surface of the support member.

[0083] This disclosure includes embodiments described in the following appendix.

[0084] Note 1. A support member having a main surface facing one side in the thickness direction, A semiconductor element having a main surface and a back surface of the element facing opposite directions in the thickness direction, and a back surface electrode disposed on the back surface of the element, The support member comprises a conductive bonding material that electrically connects the main surface and the back surface electrode, The semiconductor element has a first element side facing one side and a second element side facing the other side in a first direction perpendicular to the thickness direction, and a third element side facing one side and a fourth element side facing the other side in a second direction perpendicular to the thickness direction and the first direction. The conductive bonding material has, when viewed in the thickness direction, a first edge located on one side in the first direction with respect to the side surface of the first element and a second edge located on the other side in the first direction with respect to the side surface of the second element, a third edge located on one side in the second direction with respect to the side surface of the third element and a fourth edge located on the other side in the second direction with respect to the side surface of the fourth element, The first distance in the first direction between the side surface of the first element and the first edge is greater closer to both ends than to the center in the second direction of the side surface of the first element. The second distance in the first direction between the side surface of the second element and the second edge is greater closer to both ends than to the center of the side surface of the second element in the second direction. The third distance in the second direction between the side surface of the third element and the third edge is greater closer to both ends than to the center in the first direction of the side surface of the third element. A semiconductor device wherein the fourth distance in the second direction between the side surface of the fourth element and the fourth edge is greater closer to both ends than to the center in the first direction of the side surface of the fourth element. Note 2. The first edge includes a first edge portion extending in the second direction, a first edge portion connected to the first edge portion, a first edge portion located outside the first edge portion in the first direction and at the end closer to the third edge in the second direction, and a first edge portion located at the end closer to the fourth edge. The second edge includes a second edge first portion extending in the second direction, a second edge second portion connected to the second edge first portion and located outside the second edge first portion in the first direction and at the end closer to the third edge in the second direction, and a second edge third portion located at the end closer to the fourth edge, The third edge includes a third edge first portion extending in the first direction, a third edge second portion connected to the third edge first portion and located outside the third edge first portion in the second direction and at the end closer to the first edge in the second direction, and a third edge third portion located at the end closer to the second edge, The semiconductor device according to Appendix 1, wherein the fourth edge includes a first portion of the fourth edge extending in the first direction, a second portion of the fourth edge connected to the first portion of the fourth edge and located outside the first portion of the fourth edge in the second direction and at the end closer to the first edge in the second direction, and a third portion of the fourth edge located at the end closer to the second edge. Note 3. The first edge second portion, when viewed in the thickness direction, has a first edge first inclined portion that connects to the first edge first portion and extends in a third direction intersecting the first and second directions. The first edge third portion, when viewed in the thickness direction, has a first edge second inclined portion that connects to the first edge first portion and extends in a fourth direction intersecting the first and second directions, The second edge, second portion, has a second edge, first inclined portion that connects to the second edge, first portion and extends in the fourth direction when viewed in the thickness direction. The second edge third portion has a second inclined portion that, when viewed in the thickness direction, connects to the second edge first portion and extends in the third direction. The third edge second portion, when viewed in the thickness direction, has a third edge first inclined portion that connects to the third edge first portion and extends in the third direction, The third edge third portion has a third edge second inclined portion that, when viewed in the thickness direction, connects to the third edge first portion and extends in the fourth direction. The fourth edge second portion, when viewed in the thickness direction, has a fourth edge first inclined portion that connects to the fourth edge first portion and extends in the fourth direction, The semiconductor device according to Appendix 2, wherein the fourth edge third portion connects to the fourth edge first portion when viewed in the thickness direction and has a fourth edge second inclined portion extending in the third direction. Note 4. The conductive bonding material, when viewed in the thickness direction, has a first intermediate portion located between the side surface of the first element and the first part of the first edge, a second intermediate portion located between the side surface of the second element and the first part of the second edge, a third intermediate portion located between the side surface of the third element and the first part of the third edge, and a fourth intermediate portion located between the side surface of the fourth element and the first part of the fourth edge. A first extension portion that includes the first inclined portion of the first edge and the first inclined portion of the third edge, and extends in the third direction from the first corner portion which is the boundary between the side surface of the first element and the side surface of the third element, A second extension portion that includes the first edge second inclined portion and the fourth edge first inclined portion, and extends in the fourth direction from the second corner portion which is the boundary between the side surface of the first element and the side surface of the fourth element, A third extension portion that includes the second edge first inclined portion and the third edge second inclined portion, and extends in the fourth direction from the third corner portion which is the boundary between the side surface of the second element and the side surface of the third element, The semiconductor device according to Appendix 3, comprising the second inclined portion of the second edge and the second inclined portion of the fourth edge, and a fourth extension portion extending in the third direction from a fourth corner portion which is the boundary between the side surface of the second element and the side surface of the fourth element. Note 5. The semiconductor device according to Appendix 4, wherein, viewed in the thickness direction, the first extension length from the first corner to the tip of the first extension in the third direction, the second extension length from the second corner to the tip of the second extension in the fourth direction, the third extension length from the third corner to the tip of the third extension in the fourth direction, and the fourth extension length from the fourth corner to the tip of the fourth extension in the third direction are each 0.01 to 1 times the length of the diagonal from the first corner to the third corner of the semiconductor element. Note 6. The semiconductor device according to Appendix 4 or 5, wherein the thickness of each of the first extension, second extension, third extension, and fourth extension is greater than the thickness of any of the first intermediate portion, second intermediate portion, third intermediate portion, and fourth intermediate portion. Note 7. The semiconductor device according to Appendix 6, wherein the thickness of each of the first extension, the second extension, the third extension, and the fourth extension is 2 / 3 times or less the thickness of the semiconductor element. Note 8. The conductive bonding material is a semiconductor device according to any one of the appendices 1 to 7, containing silver. Note 9. The conductive bonding material is made of a fired metal, and the semiconductor device is as described in any one of the appendices 1 to 8. Note 10. The semiconductor device according to any one of the appendices 1 to 9, wherein the support member is a first lead that includes the main surface of the support member and is made of a metal plate. Note 11. The semiconductor device according to Appendix 10, wherein the main surface of the first lead includes a region that overlaps with a conductive bonding material when viewed in the thickness direction, and a plating layer is formed in the said region. Note 12. A second lead, which is spaced apart from the first lead when viewed in the thickness direction and is made of a metal plate, It further comprises a first conductive member, The semiconductor element has a first main surface electrode arranged on the main surface of the element, The semiconductor device according to appendix 10 or 11, wherein the first conductive member is connected to the first main surface electrode and the second lead. Note 13. A third lead, which is spaced apart from the first and second leads when viewed in the thickness direction, and is made of a metal plate, It further comprises a second conductive member, The semiconductor element has a second main surface electrode arranged on the main surface of the element, The semiconductor device as described in Appendix 12, wherein the second conductive member is connected to the second main surface electrode and the third lead. Note 14. The semiconductor device according to Appendix 13, wherein the back electrode is a drain electrode, the first main surface electrode is a source electrode, and the second main surface electrode is an electrode gate. Note 15. A step of preparing a support member having a main surface facing one side in the thickness direction, The steps include: placing a conductive bonding material on the main surface, A step of arranging a semiconductor element, which has a main surface and a back surface facing opposite directions in the thickness direction, and a back electrode disposed on the back surface of the element, and which is rectangular in shape when viewed in the thickness direction, with respect to the support member such that the back electrode is on the conductive bonding material, The process includes a step of heating the conductive bonding material to bond the main surface and the back electrode of the support member with the conductive bonding material, A method for manufacturing a semiconductor device, comprising the step of arranging the conductive bonding material, which includes forming extensions in the conductive bonding material that extend outward from each of the four corners of the semiconductor element when viewed in the thickness direction. [Explanation of Symbols]

[0085] A10, A11: Semiconductor device 1: First lead (support member) 11: Element bonding area 11a: Main surface 11b: Back side 12: Terminal-shaped extension part 121: Base part 122: Bending part 123:Tip 13:Protrusion 14: Connecting part 141: Through hole 151: Locking part 19: Plating layer 2: Second lead 21: Pad section 22: Terminal part 221: Base part 222: Bent part 223: Tip part 3: Third lead 31: Pad section 32: Terminal part 321: Base part 322: Bent part 323: Tip part 4: Semiconductor device 4a: Main surface of the device 4b: Back surface of the element 401: Side surface of the first element 402: Side view of the second element 403: Side view of the third element 404: Side view of the fourth element 41: First main surface electrode 42: Second main surface electrode 43: Back surface electrode 43': Third metal layer material 451: First corner 452: Second corner 453: Third corner 454: 4th corner 5,5': Conductive bonding material 50: Polymerization area 50': Central area 501: 1st edge 501A: 1st edge 1st part 501B: 1st edge 2nd part 501C: 1st edge 3rd part 501d: First edge first inclined part 501e: First edge second inclined part 502: Second edge 502A: Second edge first part 502B: Second edge 2nd part 502C: 2nd edge 3rd part 502d: Second edge first inclined part 502e: Second edge second inclined part 503: Third edge 503A: Third edge first part 503B: Third edge 2nd part 503C: 3rd edge 3rd part 503d: Third edge first inclined part 503e: Third edge second inclined part 504: Fourth edge 504A: Fourth edge, part 1 504B: 4th edge 2nd part 504C: 4th edge 3rd part 504d: Fourth edge first slope 504e: Fourth edge second slope 51: First Intermediate Section 52: Second Intermediate Section 53: Third Intermediate Section 54: Fourth Intermediate Section 55: First extension part 56: Second extension part 57: Third extension part 58: Fourth extension part 61: First conductive member 611: First bonding section 612: Second bonding section 62: Second conductive member 621: First Bonding Section 622: Second Bonding Section 7: Sealing resin 71: Main surface of resin 72: Resin back surface 731, 732, 733, 734: Resin side surface D1: 1st distance D2: 2nd distance D3: 3rd distance D4: 4th distance L1: First extension length L2: Second extension length L3: Third extension length L4: Fourth extension length Ld: diagonal length x: first direction y: second direction z: thickness direction v: 3rd direction w: 4th direction

Claims

1. A support member having a main surface facing one side in the thickness direction, A semiconductor element having a main surface and a back surface of the element facing opposite directions in the thickness direction, and a back surface electrode disposed on the back surface of the element, The support member comprises a conductive bonding material that electrically connects the main surface and the back surface electrode, The semiconductor element has a first element side facing one side and a second element side facing the other side in a first direction perpendicular to the thickness direction, and a third element side facing one side and a fourth element side facing the other side in a second direction perpendicular to the thickness direction and the first direction. The conductive bonding material is composed of calcined silver, The main surface of the support member has a plating layer containing silver or nickel in at least the region in contact with the conductive bonding material. The conductive bonding material has a first extension portion that extends from a first corner portion which is the boundary between the side surface of the first element and the side surface of the third element, The first extension has an inclined portion that extends linearly along a direction intersecting both the first and second directions from the first corner, due to the wettability of the fired silver on the plating layer. A semiconductor device wherein the thickness of the first extension is greater than the thickness of the intermediate portion of the conductive bonding material that extends beyond the periphery of the semiconductor element.

2. The semiconductor device according to claim 1, wherein, viewed in the thickness direction, the length from the first corner to the tip of the first extension is 0.01 to 1 times the length of the diagonal of the semiconductor element.

3. The semiconductor device according to claim 1 or 2, wherein the thickness of the first extension is 2 / 3 times or less the thickness of the semiconductor element.

4. The semiconductor device according to any one of claims 1 to 3, wherein the plating layer is formed on the entire area of ​​the main surface of the support member that overlaps with at least the conductive bonding material.

5. The semiconductor device according to any one of claims 1 to 4, wherein the inclined portion of the first extension extends at an angle of 45° with respect to the first direction and the second direction, respectively, when viewed in the thickness direction.

6. The semiconductor device according to any one of claims 1 to 5, wherein the semiconductor element is a MOSFET, an IGBT, or a diode.

7. The semiconductor device according to any one of claims 1 to 6, wherein the support member is a first lead made of a metal plate, and the first lead has a terminal portion having a bent portion that is bent from the main surface to one side in the thickness direction.

8. A semiconductor device according to any one of claims 1 to 7, comprising the conductive bonding material and a sealing resin covering the semiconductor element, wherein the sealing resin is an epoxy resin.

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