Indication device

Abstract

To provide semiconductor devices with low wiring resistance and high transmittance. The objective is to provide a semiconductor device with a high aperture ratio. [Solution] The gate electrode, semiconductor layer, source electrode or drain electrode are made of a light-transmitting material. Formed using a light-transmitting material, the resistivity of the gate wiring or source wiring is lower than that of the light-transmitting material. It shall be made of low-cost material. In addition, source wiring and / or gate wiring shall be made of a light-transmitting material. A material with lower resistivity than the light-transmitting material is laminated to provide this. This allows us to provide semiconductor devices with low emission and high transmittance.

Description

[Technical Field]

[0001] The present invention relates to semiconductor devices, display devices, light-emitting devices, or methods for manufacturing the same. In particular, A semiconductor circuit having a thin-film transistor with an oxide semiconductor film in the Nell-formed region This invention relates to a body device and a method for manufacturing the same. [Background technology]

[0002] Currently, amorphous silicon is used as a switching element in display devices such as liquid crystal displays. Thin-film transistors (TFTs) that use a silicon layer such as a capacitor as the channel layer are widely used. Thin-film transistors using amorphous silicon have low field-effect mobility. It has the advantage of being able to accommodate large-area glass substrates.

[0003] Furthermore, in recent years, thin-film transistors have been fabricated using metal oxides that exhibit semiconductor properties, and electronic devices... The technology is attracting attention for its application in chairs and optical devices. For example, among metal oxides, It is known that stenoids, tin oxide, indium oxide, and zinc oxide exhibit semiconductor properties. There is a thin film that uses a transparent semiconductor layer composed of such metal oxides as the channel formation region. A transistor is disclosed (Patent Document 1).

[0004] Furthermore, the channel layer of the transistor is formed from a translucent oxide semiconductor layer, and The source electrode, drain electrode, and other electrodes are also formed from a transparent conductive film that is light-transmitting. Therefore, technologies to improve the aperture ratio are being considered (Patent Document 2).

[0005] By improving the aperture ratio, light utilization efficiency is enhanced, leading to power savings and miniaturization of display devices. It becomes possible to achieve. On the other hand, from the viewpoints of increasing the size of the display device and applying it to portable devices further reduction of power consumption is required along with an improvement in the aperture ratio.

[0006] In addition, as a wiring method of the metal auxiliary wiring with respect to the transparent electrode of the electro-optical element, either above or below the transparent electrode the metal auxiliary wiring and the transparent electrode are wired so as to overlap so that conduction can be achieved with the transparent electrode (see, for example, Patent Document 3).

[0007] In addition, the additional capacitance electrode provided on the active matrix substrate is made of a transparent conductive film such as ITO or SnO2 and a configuration in which an auxiliary wiring made of a metal film is provided in contact with the electrode for additional capacitance is known (see, for example, Patent Document 4 ). )

[0008] In addition, in a field effect transistor using an amorphous oxide semiconductor film, as each of the gate electrode, source electrode and drain electrode, transparent electrodes such as indium tin oxide (ITO), indium zinc oxide, ZnO, SnO2 metal electrodes such as Al, Ag, Cr, Ni, Mo, Au , Ti, Ta, etc., or metal electrodes of alloys containing these can be used , and it is known that laminating two or more of them can reduce the contact resistance and improve the interface strength (see, for example, Patent Document 5).

[0009] In addition, as materials for the source electrode, drain electrode, gate electrode, and auxiliary capacitance electrode of a transistor using an amorphous oxide semiconductor, metals such as indium (In), aluminum (Al), gold (Au), silver (Ag), etc., and indium oxide (In2O3), tin oxide (SnO2) Zinc oxide (ZnO), cadmium oxide (CdO), indium cadmium oxide (CdI (n2O4), cadmium tin oxide (Cd2SnO4), zinc tin oxide (Zn2SnO4) Oxide materials such as these can be used, and the materials for airports, source electrodes and drain electrodes are It is known that they may all be the same or they may all be different (see, for example, Patent Documents 6 and 7). ). [Prior art documents] [Patent Documents]

[0010] [Patent Document 1] Japanese Patent Publication No. 2004-103957 [Patent Document 2] Japanese Patent Publication No. 2007-81362 [Patent Document 3] Japanese Patent Application Publication No. 2-82221 [Patent Document 4] Japanese Patent Application Publication No. 2-310536 [Patent Document 5] Japanese Patent Publication No. 2008-243928 [Patent Document 6] Japanese Patent Publication No. 2007-109918 [Patent Document 7] Japanese Patent Publication No. 2007-115807 [Overview of the Initiative] [Problems that the invention aims to solve]

[0011] One aspect of the present invention aims to provide a semiconductor device with low wiring resistance. Alternatively, this One aspect of the invention aims to provide a semiconductor device with high transmittance. Alternatively, the present invention One aspect of the present invention aims to provide a semiconductor device with a high aperture ratio. Alternatively, one aspect of the present invention aims to provide a semiconductor device with a high aperture ratio. The objective of this embodiment is to provide a semiconductor device with low power consumption. Or, an embodiment of the present invention. The objective is to provide a semiconductor device that supplies accurate voltage. One embodiment aims to provide a semiconductor device in which voltage drop is reduced. Alternatively, this invention One aspect of the invention aims to provide a semiconductor device with improved display quality. Alternatively, this One aspect of the invention aims to provide a semiconductor device with reduced contact resistance. Alternatively, one aspect of the present invention aims to provide a semiconductor device with reduced flicker. Alternatively, one aspect of the present invention aims to provide a semiconductor device with a small off-current. Furthermore, the description of these problems does not preclude the existence of other problems. The embodiment does not need to solve all of the above-mentioned problems. [Means for solving the problem]

[0012] To solve the above problems, one aspect of the present invention relates to a gate electrode, a semiconductor layer, a source electrode or The drain electrode is formed using a light-transmitting material, and the gate wiring or source wiring is connected to it. The wires are made of a material with lower resistivity than the light-transmitting material.

[0013] Furthermore, one aspect of the present invention provides a first electrode provided with a light-transmitting first conductive layer, and a first The electrodes are electrically connected, and consist of a first conductive layer and a second conductive layer having lower resistance than the first conductive layer. A first wiring structure is provided in a laminated form, and an insulating layer is provided on the first electrode and the first wiring. The second electrode is provided on the insulating layer and is made of a third conductive layer that is translucent, and the second The electrodes are electrically connected, and a third conductive layer and a fourth conductive layer with lower resistance than the third conductive layer are connected. A second wiring is provided in a laminated structure, and a third is provided in a fifth conductive layer that is translucent. An electrode, and a second electrode and a third electrode which are provided on the insulating layer so as to overlap with the first electrode. The present invention provides a semiconductor device having a semiconductor layer provided on an electrode.

[0014] Furthermore, one aspect of the present invention provides a first electrode provided with a light-transmitting first conductive layer, and a first The electrodes are electrically connected, and the first conductive layer and the second conductive layer have lower resistance than the first conductive layer. A first wiring structure is provided in a laminated structure, and a second wiring is provided in a third conductive layer that is translucent. Wiring, a first electrode, an insulating layer provided on the first wiring and the second wiring, and provided on the insulating layer A second electrode is provided with a fourth conductive layer that is transparent to light, and the second electrode is electrically connected to it. It is provided in a laminated structure consisting of a fourth conductive layer and a fifth conductive layer having lower resistance than the fourth conductive layer. A third wiring, a third electrode provided with a translucent sixth conductive layer, and a second wiring A seventh conductive layer, which is transparent and is provided on the line via an insulating layer, and a first electrode on the insulating layer It is provided so as to overlap with the second electrode and the third electrode, and the semiconductor layer provided on the second electrode and the third electrode To provide a semiconductor device.

[0015] Note that various types of switches can be used. For example, an electrical switch These include switches and mechanical switches. In other words, anything that can control the flow of electric current will do. It is not limited to specific types. For example, a transistor (e.g., bipod) can be used as a switch. (Transistors, MOS transistors, etc.), diodes (e.g., PN diodes, P IN diode, Schottky diode, MIM (Metal Insulator) Metal diode, MIS (Metal Insulator Semiconductor) You can use diodes, diode-connected transistors, etc. Alternatively, a logic circuit combining these elements can be used as a switch.

[0016] Examples of mechanical switches include digital micromirror devices (DMDs), There are switches that use MEMS (Micro-Electro-Mechanical System) technology. The switch has electrodes that can be moved mechanically, and when these electrodes move... It operates by controlling the transitions between conductivity and non-conductivity.

[0017] When a transistor is used as a switch, that transistor is not simply a switch. For operation, the polarity (conductivity type) of the transistor is not particularly limited. However, the off-current is If you want to suppress it, it is desirable to use a transistor with the polarity that has a lower off-current. Examples of transistors with low current include transistors with an LDD region and multi-gate transistors. There are transistors with a specific design. Alternatively, there are transistors that operate as switches. The terminal operates at a potential close to the potential of the low-potential power supply (Vss, GND, 0V, etc.). In such cases, it is desirable to use an N-channel transistor. Conversely, the potential of the source terminal However, when operating at a potential close to that of the high-potential power supply (such as Vdd), a P-channel type transistor is used. It is preferable to use a sta. This is because in an N-channel transistor, the source terminal is low When operating at a potential close to that of the potential-side power supply, the source terminal of a P-channel transistor is When operating at a potential close to that of the high-potential power supply, the absolute value of the voltage between the gate and source becomes large. This is because it allows for more precise operation as a switch. Because transistors rarely operate as source followers, the output voltage is large. This is because it is less likely to become smaller.

[0018] Furthermore, using both N-channel and P-channel transistors, CMOS A type of switch may be used as the switch. If a CMOS type switch is used, the P channel Either a single-channel transistor or an N-channel transistor conducts. This allows current to flow, making it easier to function as a switch. For example, input to a switch It can output the correct voltage regardless of whether the signal voltage is high or low. This allows for reducing the voltage amplitude value of the signal used to turn the switch on or off. Therefore, it is also possible to reduce power consumption.

[0019] When using a transistor as a switch, the switch is connected to the input terminal (source terminal). (or one of the drain terminals), and an output terminal (the other of the source terminal or drain terminal), It has a terminal (gate terminal) that controls the flow. On the other hand, a diode is used as a switch. If present, the switch may not have terminals to control conductivity. Therefore, Using diodes as switches instead of transistors reduces the amount of wiring required to control the terminals. It can be eliminated.

[0020] Furthermore, if it is explicitly stated that A and B are connected, it means that A and B are electrically connected. When A and B are functionally connected, and when A and B are directly connected This includes cases where... Here, A and B are the objects (e.g., devices, elements, circuits). (Wiring, electrodes, terminals, conductive film, layer, etc.) Therefore, a predetermined connection relationship, For example, not limited to the connection relationships shown in the diagram or text, This includes those who are not in charge of the department.

[0021] For example, if A and B are electrically connected, it is possible to make the electrical connection between A and B possible. Elements such as switches, transistors, capacitive elements, inductors, resistive elements, and dies. One or more (such as an Od) may be connected between A and B. Or, A and B may be A functionally connected case is a circuit that enables a functional connection between A and B (for example) , logic circuits (inverters, NAND gates, NOR gates, etc.), signal conversion circuits (DA converters) (Path, AD conversion circuit, gamma correction circuit, etc.), potential level conversion circuit (power supply circuit (boost circuit, Step-down circuits, level shifter circuits that change the potential level of a signal, voltage sources, current sources, Switching circuits, amplification circuits (circuits that can increase signal amplitude or current, etc., operational amplifiers, Differential amplifier circuits, source follower circuits, buffer circuits, etc.), signal generation circuits, memory circuits, control One or more circuits (such as your own) may be connected between A and B. For example, between A and B Even if another circuit is in between, if the signal output from A is transmitted to B, then A and B are It is assumed that they are functionally connected.

[0022] Furthermore, if it is explicitly stated that A and B are electrically connected, then A and B are electrically connected. When directly connected (that is, when A and B are connected with another element or circuit in between) (if there is a connection between A and B) and when A and B are functionally connected (i.e., there is a connection between A and B) (When A and B are functionally connected with a circuit in between) and (When A and B are directly connected) This includes cases where A and B are connected without any other element or circuit in between. Therefore, if you explicitly state that they are electrically connected, then simply state that they are connected. This is equivalent to the case where it is explicitly stated only that it is.

[0023] Furthermore, a display element, a display device having a display element, a light-emitting element, and a device having a light-emitting element The light-emitting device can take on various forms and have various elements. For example As display elements, display devices, light-emitting elements, or light-emitting devices, EL (electroluminescent) LEDs (EL elements including organic and inorganic materials, organic EL elements, inorganic EL elements), (White LED, red LED, green LED, blue LED, etc.), transistor (depending on the current) Transistors that emit light, electron-emitting elements, liquid crystal elements, electronic inks, electrophoretic elements, grayscale Light bulbs (GLV), plasma displays (PDP), digital microphones DMMs (DMDs), piezoelectric ceramic displays, carbon nanotubes, etc. Display media whose contrast, brightness, reflectivity, transmittance, etc., change due to electromagnetic interference. It can have a body. Furthermore, as a display device using an EL element, it is an EL display. Examples of display devices using electron emission elements include field emission displays (FEDs). or SED type flat-panel display (SED: Surface-conduction E Display devices using liquid crystal elements, such as lectron-emitter displays. Liquid crystal displays (transmissive liquid crystal displays, semi-transmissive liquid crystal displays, reflective liquid crystal displays) Crystal displays, direct-view liquid crystal displays, projection liquid crystal displays, electronic ink and electronic displays Electronic paper is an example of a display device that uses a pneumatophoresis element.

[0024] An EL element is an element having an anode, a cathode, and an EL layer sandwiched between the anode and cathode. It is a child. Furthermore, the EL layer utilizes emission (fluorescence) from singlet excitons, and 3 This method utilizes emission from multiplet excitons (phosphorescence) and emission from singlet excitons (fluorescence). This includes methods that utilize the emission (phosphorescence) from triplet excitons, and methods that utilize organic materials. Formed by inorganic matter, formed by inorganic matter, formed by organic matter and Materials formed by substances, polymer materials, low molecular weight materials, polymer materials It may include materials such as low molecular weight materials. However, it is not limited to this, E It can have a variety of L elements.

[0025] An electron-emitting element is a device that extracts electrons by concentrating a high electric field at the cathode. For example, As electron emission devices, spint type, carbon nanotube (CNT) type, metal-insulator type Metal-Insulator-Metal (MIM) type, with layered metals. MIS (Metal-Insulator-Semiconductor) is a stacked structure of metal-insulator-semiconductors. tor) type, MOS type, silicon type, thin-film diode type, diamond type, surface conduction emitter Thin film types such as SCD type, metal-insulator-semiconductor-metal type, HEED type, EL type, polar It can have silicon-type, surface conduction (SCE) type, etc. However, it is not limited to these. Furthermore, it can have various types of electron-emitting elements.

[0026] A liquid crystal element is a component that controls the transmission or non-transmission of light through the optical modulation effect of liquid crystals. It is a sub-unit and consists of a pair of electrodes and liquid crystal. The optical modulation effect of the liquid crystal is due to the liquid Controlled by the electric field applied to the crystal (including horizontal, vertical, or diagonal electric fields). The liquid crystal elements include nematic liquid crystals, cholesteric liquid crystals, and smectic liquid crystals. Liquid crystal, discotic liquid crystal, thermotropic liquid crystal, lyotropic liquid crystal, low molecular weight liquid crystal, Polymer liquid crystals, polymer dispersed liquid crystals (PDLCs), ferroelectric liquid crystals, antiferroelectric liquid crystals, main-chain liquid crystals, Side-chain polymer liquid crystal, plasma address liquid crystal (PALC), banana-type liquid crystal, TN (Twis (Super Twisted Nematic) mode, STN (Super Twisted Nematic) c) Mode, IPS (In-Plane-Switching) mode, FFS (Fri nge Field Switching) mode, MVA (Multi-domain) Vertical Alignment) mode, PVA (Patterned Ve rtical Alignment), ASV(Advanced Super Vie) w) mode, ASM (Axially Symmetric aligned Micro o-cell) mode, OCB (Optical Compensated Biref ringence) mode, ECB (Electrically Controlled) Birefringence mode, FLC (Ferroelectric Liq uid Crystal) mode, AFLC(AntiFerroelectric L iquix Crystal mode, PDLC (Polymer Dispersed Liquid Crystal mode, guest host mode, blue phase Modes such as Phase mode can be used. However, this is not limited to liquid crystal elements and This allows you to use various things.

[0027] Furthermore, electronic paper is a type of display that uses molecules (optical anisotropy, dye molecule orientation, etc.). (e.g., electrophoresis, particle migration, particle rotation, phase change), This is caused by the movement of one end of a molecule, or by the color change / phase change of a molecule. Things that are displayed by light absorption by molecules, or by self-illumination caused by the bonding of electrons and holes. This refers to things like microcapsule electrophoresis. For example, as an electronic paper, microcapsule electrophoresis Horizontal-moving electrophoresis, vertical-moving electrophoresis, spherical twist balls, magnetic twist balls Cylindrical twist ball method, charged toner, electronic powder fluid (a registered trademark of Bridgestone Corporation) ), magnetic electrophoresis type, magnetic thermal type, electrowetting, light scattering (transparent turbidity), coreless Telic liquid crystal / photoconductive layer, cholesteric liquid crystal, bistable nematic liquid crystal, ferroelectric liquid crystal Dichromatic dye, liquid crystal dispersion type, movable film, leuco dye colorfastness, photochromic, ele This involves using chromochromic, electrodeposition, flexible organic EL, etc. Yes, it is possible. However, it is not limited to this; various types of electronic paper can be used. Here, by using microcapsule electrophoresis, the drawbacks of the electrophoretic method can be overcome. This can solve the aggregation and precipitation of certain electrophoretic particles. Electron powder fluid offers high-speed response and high reflectivity. It offers advantages such as high resolution, wide viewing angle, low power consumption, and memory capacity.

[0028] Furthermore, a plasma display consists of a substrate with electrodes formed on its surface, and electrodes and minute grooves formed on the surface. A substrate formed in a certain manner and with a phosphor layer formed in the grooves is placed opposite another substrate at a narrow distance apart, and a rare gas is sealed inside. It has a structure that allows the plasma tube to be viewed from above and below. Alternatively, the plasma display has a structure that allows the plasma tube to be viewed from above and below. It is also possible to create a structure where the electrodes are sandwiched together. The plasma tube is made of glass. The tube contains sealed discharge gas and RGB phosphors. By applying a voltage between the electrodes, ultraviolet light is generated, causing the phosphor to glow, thus creating a display. It is possible to do so. Furthermore, as for plasma displays, DC-type PDPs and AC-type PDPs are available. This is also good. Here, as a plasma display panel, ASW(Address Wh (Ile Sustain) drive, subframe reset period, address period, maintenance period ADS (Address Display Separated) drive that divides into parts, CL EAR(HIGH-CONTRAST&LOW ENERGY ADDRESS&RED (Driving False Contour Sequence) (Alternate Lighting of Surfaces) method, TERES (Technology of Reciprocal Suspender) drive, etc. It can be used. However, it is not limited to this, and various plasma displays can be used. It is possible to use things.

[0029] Note that display devices that require a light source, such as liquid crystal displays (transmissive liquid crystal displays) Semi-transmissive liquid crystal displays, reflective liquid crystal displays, direct-view liquid crystal displays, projection Display devices using liquid crystal displays, grating light bulbs (GLVs), and digital As a light source for display devices using a t-micromirror device (DMD), Using lorluminescence, cold cathode tubes, hot cathode tubes, LEDs, laser light sources, mercury lamps, etc. It is possible to do so. However, it is not limited to this, and various things can be used as light sources. .

[0030] Furthermore, various types of transistors can be used as transistors. Therefore, There are no restrictions on the type of transistor used. For example, amorphous silicon, polycrystalline silicon, microcrystalline silicon, etc. Crystals (also called microcrystals, nanocrystals, or semi-amorphous materials) such as silicon. Thin-film transistors (TFTs) having non-single-crystal semiconductor films, such as those exemplified by [examples of thin-film transistors], can be used. Yes, it's possible. Using TFTs offers various advantages. For example, compared to single-crystal silicon... Because it can be manufactured at a lower temperature, it can reduce manufacturing costs or allow for the use of larger manufacturing equipment. Yes, it is possible. Because the manufacturing equipment can be made larger, it is possible to manufacture on large substrates. Therefore, many can be manufactured simultaneously. Because it can manufacture display devices with a limited number of units, it can be manufactured at a low cost. Furthermore, because the manufacturing temperature is low... Therefore, substrates with poor heat resistance can be used. It is possible to manufacture transistors. And, using transistors on a light-transmitting substrate, a display element can be created. It is possible to control the transmission of light. Alternatively, because the film thickness of the transistor is thin, A portion of the film that makes up the zista can transmit light. Therefore, the aperture ratio is improved. It can be done.

[0031] Furthermore, when manufacturing polycrystalline silicon, by using a catalyst (such as nickel), Further improvement in crystallinity makes it possible to manufacture transistors with better electrical properties. As a result, gate driver circuits (scan line driving circuits) and source driver circuits (signal line driving circuits) The signal processing circuit (signal generation circuit, gamma correction circuit, DA conversion circuit, etc.) is integrated onto the circuit board. It is possible.

[0032] Furthermore, when manufacturing microcrystalline silicon, using a catalyst (such as nickel) can lead to This will further improve crystallinity and make it possible to manufacture transistors with better electrical properties. Sometimes, crystallinity can be improved simply by applying heat treatment without laser irradiation. It is possible. As a result, part of the source driver circuit (such as analog switches) and the game The CT driver circuit (scan line drive circuit) can be integrally formed on the substrate. Furthermore, crystal If laser irradiation is not performed for the purpose of crystalline silicon, it is possible to suppress the unevenness of silicon crystallinity. Therefore, it is possible to display images with improved image quality.

[0033] However, it is not possible to manufacture polycrystalline silicon or microcrystalline silicon without using a catalyst (such as nickel). It is possible.

[0034] Furthermore, improving the crystallinity of silicon to polycrystalline or microcrystalline forms affects the entire panel. It is preferable to do so, but it is not limited to that. In only a portion of the panel, silicate The crystallinity of the material may be improved. Selectively improving crystallinity can be achieved by selecting the laser light. This is possible by selectively illuminating the area, for example, the peripheral circuit area, which is an area other than the pixel. Laser light may be shone only on the gate driver circuit, source driver circuit. The laser light may be irradiated only to areas such as roads. Alternatively, it may be irradiated to part of the source driver circuit. The laser light may be irradiated only in the area of ​​(for example, an analog switch). As a result, It is possible to improve silicon crystallization only in areas where the circuit needs to operate at high speed. It is possible. Since the pixel region does not require high-speed operation, even if the crystallinity is not improved, there is no problem. The pixel circuit can be operated without any problems because it requires less area to improve crystallinity. This also allows for a shorter manufacturing process, improved throughput, and reduced manufacturing costs. This is possible. Since it can be manufactured with fewer manufacturing devices, it reduces manufacturing costs. It is possible to do so.

[0035] Alternatively, transistors can be formed using semiconductor substrates or SOI substrates. As a result, there is less variation in characteristics, size, and shape, and the current supply capacity is high. These transistors can be used to manufacture very small transistors. This allows for lower power consumption or higher circuit integration.

[0036] Alternatively, ZnO, a-InGaZnO, SiGe, GaAs, IZO, ITO, SnO, Compound semiconductors or oxide semiconductors such as TiO and AlZnSnO(AZTO) Lampistors, and furthermore, thin-film transistors made by thinning these compound semiconductors or oxide semiconductors. A converter or similar device can be used. This allows the manufacturing temperature to be lowered, for example, to room temperature. This makes it possible to manufacture transistors using substrates with low heat resistance, such as plastic. Transistors can be directly formed on sticky substrates or film substrates. In addition to using compound semiconductors or oxide semiconductors in the channel portion of transistors, They can also be used for other purposes. For example, these compound semiconductors or oxide semiconductors. Conductors can be used as resistive elements, pixel electrodes, and light-transmitting electrodes. Furthermore, Since these can be deposited or formed simultaneously with the transistor, costs can be reduced.

[0037] Alternatively, transistors formed using inkjet or printing methods can be used. These methods allow for manufacturing at room temperature, at low vacuum levels, or on large substrates. Therefore, it becomes possible to manufacture without using a mask (reticle), thus the transistor The layout can be easily changed. Furthermore, since there is no need to use registration, Material costs are reduced, and the number of processes can be decreased. Furthermore, since the film is applied only to the necessary parts, the entire process is complete. This method is less wasteful and lower-cost than the method of etching after forming a film on the surface. can.

[0038] Alternatively, transistors containing organic semiconductors or carbon nanotubes can be used. These methods allow transistors to be formed on a flexible substrate. Semiconductor devices using such substrates can be made more resistant to impact.

[0039] Furthermore, transistors of various structures can be used. For example, MOS type transistors The use of junction transistors, bipolar transistors, etc., as transistors. This can be done. By using MOS type transistors, the size of the transistor can be reduced. It is possible to do so. Therefore, multiple transistors can be installed. Bipolar transistor By using a transistor, it is possible to pass a large current. Therefore, the circuit can be moved at high speed. It can be made to do it.

[0040] Furthermore, MOS transistors, bipolar transistors, etc., are mixed together on a single substrate. This may be done. This will enable low power consumption, miniaturization, and high-speed operation. .

[0041] In addition, various other transistors can be used.

[0042] Furthermore, transistors can be formed using various substrates. The type of substrate is not specified. It is not limited to those. For example, the substrate could be a single crystal substrate (e.g., silicon (Plastic substrates), SOI substrates, glass substrates, quartz substrates, plastic substrates, metal substrates, stainless steel Stainless steel substrate, substrate with stainless steel foil, tungsten substrate, tung A substrate with stainless foil, a flexible substrate, etc., can be used. An example of a glass substrate. Examples include barium borosilicate glass and aluminobosilicate glass. Flexible group Examples of boards include polyethylene terephthalate (PET) and polyethylene naphthalate. Plastics such as (PEN), polyethersulfone (PES), or acrylic Examples include flexible synthetic resins such as acrylic. Other examples include laminated films (polypropylene). Includes fibrous materials (such as polyester, vinyl, polyvinyl fluoride, and polyvinyl chloride). Paper, base films (polyester, polyamide, polyimide, inorganic vapor-deposited films, paper products, etc.) ) and so on. Alternatively, a transistor can be formed using one substrate, and then transferred to another substrate. The transistor may be transposed and placed on a different substrate. The substrates used include single crystal substrates, SOI substrates, glass substrates, quartz substrates, and plastic substrates. Boards, paper substrates, cellophane substrates, stone substrates, wood substrates, cloth substrates (natural fibers (silk, cotton, linen)), Synthetic fibers (nylon, polyurethane, polyester) or regenerated fibers (acetate, ki Includes materials such as supra, rayon, recycled polyester, leather substrate, rubber substrate, stainless steel • A steel substrate, a substrate having stainless steel foil, etc. can be used. Alternatively, the skin (epidermis, dermis) or subcutaneous tissue of animals such as humans may be used as a substrate. Alternatively, a transistor may be formed using a substrate, and the substrate may be polished to make it thinner. The substrates to be polished include single crystal substrates, SOI substrates, glass substrates, quartz substrates, and plastics. Substrates, stainless steel substrates, and substrates with stainless steel foil are used. This is possible. By using these substrates, it is possible to form transistors with good characteristics and consume power. Formation of low-power transistors, manufacture of durable devices, heat resistance, weight reduction, or It is possible to make it thinner.

[0043] Furthermore, transistor configurations can take various forms and are not limited to a specific configuration. For example, a multi-gate structure with two or more gate electrodes can be applied. In a series structure, the channel regions are connected in series, so multiple transistors are connected in series. The configuration is interconnected. The multi-gate structure reduces off-current and improves the transistor's breakdown voltage. Improvements (reliability improvements) can be achieved. Alternatively, a multi-gate structure can be used to reduce the saturation region. When operating in the region, even if the drain-source voltage changes, the drain-source current remains constant. It does not change much, and the slope of the voltage-current characteristics can be made flat. By utilizing the characteristic of having a flat slope, it is possible to create an ideal current source circuit or a circuit with very high resistance values. This enables the realization of an active load. As a result, a differential circuit or current mirror circuit with good characteristics can be achieved. It is possible to realize a road.

[0044] As another example, a structure can be applied in which gate electrodes are positioned above and below the channel. By arranging gate electrodes above and below the channel, the channel region As this increases, the current value can be increased. Alternatively, gate electrodes can be placed above and below the channel. By arranging the structure in such a way, a depletion layer is more likely to form, thus improving the S value. This can be achieved by arranging gate electrodes above and below the channel. This results in a configuration where multiple transistors are connected in parallel.

[0045] A structure in which the gate electrode is positioned above the channel region, and a structure in which the gate electrode is positioned below the channel region. The structure in which the elements are arranged, the positive staggered structure, the inverse staggered structure, and the channel region are divided into multiple regions. Structures include structures where channel regions are connected in parallel, or configurations where channel regions are connected in series. Applicable. Furthermore, if the source electrode or drain electrode is located in the channel region (or part thereof) Overlapping structures can also be applied. The source electrode or drain is placed in the channel region (or part thereof). By creating a structure where the in electrodes overlap, charge accumulates in a part of the channel region. This can prevent the operation from becoming unstable. Alternatively, a structure with an LDD area can be used. It can be used. By providing an LDD region, the off-current can be reduced, or the transistor's breakdown voltage can be improved. This can improve reliability. Alternatively, by creating an LDD area, When operating in the sum domain, even if the drain-source voltage changes, the drain-source current remains constant. This allows the voltage-current characteristics to remain relatively stable and have a flat slope.

[0046] Furthermore, various types of transistors can be used, and they can be formed using various substrates. Therefore, all the circuits necessary to realize a given function are identical. It is also possible to form it on a substrate. For example, a circuit necessary to realize a predetermined function. All of these are various types of substrates such as glass substrates, plastic substrates, single crystal substrates, or SOI substrates. It is also possible to form it using a substrate. All of the circuits necessary to realize the predetermined function Because they are formed using the same substrate, the cost is reduced by reducing the number of components. Alternatively, reliability can be improved by reducing the number of connection points with circuit components. A portion of the circuitry necessary to achieve a specific function is formed on a certain substrate, and the predetermined function is realized. It is also possible that another part of the circuit necessary to achieve this is formed on a separate circuit board. In other words, all the circuits necessary to achieve a given function are formed using the same circuit board. It is not necessary. For example, part of the circuit necessary to achieve a certain function is a glass substrate. Another part of the circuit formed on the board by transistors and necessary to realize a predetermined function The part is formed on a single crystal substrate and is composed of transistors formed using the single crystal substrate. The IC chip is connected to the glass substrate using COG (Chip On Glass), and the glass substrate It is also possible to place the IC chip on a board. Alternatively, the IC chip can be placed on a TAB (Tape Automated Bonding) or using printed circuit boards to create glass substrates It is also possible to connect them in this way. In this way, part of the circuit is formed on the same board. This reduces costs by reducing the number of components, or reduces reliability by reducing the number of connections to circuit components. Reliability can be improved. Alternatively, in parts with high drive voltage and high drive frequency Because the circuitry for that portion consumes a lot of power, the circuitry for that portion is not mounted on the same board. Unable to do so, instead, for example, a circuit for that part is formed on a single crystal substrate, and the circuit is constructed By using pre-fabricated IC chips, an increase in power consumption can be prevented.

[0047] Note that one pixel refers to a single element whose brightness can be controlled. Therefore, as an example, Therefore, one pixel represents one color element, and brightness is expressed using that single color element. Therefore, in that case, in the case of a color display device consisting of R (red), G (green), and B (blue) color elements... In this definition, the smallest unit of an image consists of three pixels: a red pixel, a green pixel, and a blue pixel. The color elements are not limited to three colors; more than three colors may be used, and colors other than RGB may also be used. You can also use color. For example, you can add white and use RGBW (where W is white). For example, RGB colors include yellow, cyan, magenta, emerald green, and vermilion. It is also possible to add one or more colors. Or, for example, at least one of the RGB colors. It is also possible to add colors similar to the color to RGB. For example, R, G, B1, B2 and You may do so. Both B1 and B2 are blue, but their wavelengths are slightly different. It is also possible to use R1, R2, G, and B. By using such color elements, It is possible to display things more accurately to reality. By using such color elements, power consumption can be reduced. The force can be reduced. Another example is using multiple regions for a single color element. When controlling brightness, it is also possible to treat one area as one pixel. Therefore, For example, when performing area gradation or when there are subpixels, one color Each element has multiple areas that control brightness, and the overall effect expresses gradation, but the brightness It is also possible to define one pixel as the area to be controlled. Therefore, in that case, one color An element will consist of multiple pixels. Alternatively, the area that controls brightness will be a single area. Even if there are multiple color elements, they can be grouped together and treated as a single color element, or as one pixel. In that case, one color element would be composed of one pixel. Or, one When controlling the brightness of a color element using multiple regions, the display depends on the pixel. The size of the contributing area may differ. Or, there may be multiple contributions for a single color element. In the region where brightness is controlled, the signals supplied to each are made slightly different. You can also widen the viewing angle. In other words, for a single color element, if there are multiple regions It is possible that the potential of each pixel electrode is different. As a result, liquid crystal molecules The voltage applied to each pixel electrode is different. Therefore, the field of view can be widened. .

[0048] Note that when explicitly stating "one pixel (three colors)," one pixel is considered to consist of three pixels: R, G, and B. Let's assume this is the case. When explicitly stating one pixel (one color), it refers to one color element. Let's assume that when there are multiple regions, they are considered as a single pixel.

[0049] Note that pixels may be arranged (arranged) in a matrix. Here, pixels are a matrix Arranged (or positioned) in the rix means that the pixels are aligned in a straight line, either vertically or horizontally. This includes cases where they are arranged side by side or on a jagged line. Therefore, For example, when displaying full color using three color elements (e.g., RGB), a striped arrangement is used. This also includes cases where the three color element dots are in a delta configuration. Furthermore, This also includes cases where the layout is Bayer. Note that the size of the display area for each dot of the color element is They may be different. This can lead to lower power consumption or longer lifespan of the display elements. can.

[0050] Furthermore, an active matrix system in which the pixels have active elements, or a system in which the pixels have active elements A passive matrix method that does not involve manual intervention can be used.

[0051] In the active matrix system, the active elements (active elements, nonlinear elements) are, In addition to transistors, various active elements (active elements, nonlinear elements) are used. This is possible. For example, MIM (Metal Insulator Metal) and TFD ( It is also possible to use thin film diodes, etc. These elements are manufactured Because the manufacturing process involves fewer steps, it is possible to reduce manufacturing costs or improve yield. Furthermore, because the element size is small, the aperture ratio can be improved, resulting in lower power consumption and higher brightness. It is possible to transform it.

[0052] In addition to the active matrix method, there are other types of active elements (active elements, nonlinear). It is also possible to use a passive matrix type without active elements. Because it does not use (nonlinear elements, etc.), the manufacturing process is simpler, resulting in reduced manufacturing costs or higher yield. This can improve performance. It does not use active elements (active elements, nonlinear elements). Therefore, the aperture ratio can be improved, leading to lower power consumption and higher brightness.

[0053] A transistor is defined as having at least three terminals, including a gate, a drain, and a source. It is an element having a channel region between the drain region and the source region, and the drain Current can be passed through the input region, channel region, and source region. The difference between the drain and the source depends on the transistor's structure and operating conditions, so which one is the source? It is difficult to determine whether it is a source or a drain. Therefore, source and drain and The area that functions in this way is sometimes not called the source or drain. In that case, for example, In some cases, these are referred to as the first terminal and the second terminal, respectively. Alternatively, they may be referred to as the first They are sometimes referred to as electrode 1 and electrode 2. Alternatively, they may be referred to as region 1 and region 2. There is.

[0054] A transistor has at least three terminals, including a base, emitter, and collector. It may also be a component that does the same. In this case as well, the emitter and collector are connected to the first terminal and the second terminal. It may sometimes be referred to as a terminal or similar term.

[0055] Note that a gate refers to a gate electrode and gate wiring (gate wire, gate signal wire, scan line, scan signal). It refers to the whole including (also called the line number, etc.) or a part of them. The gate electrode and This consists of a semiconductor forming a channel region and a portion that overlaps via a gate insulating film. It refers to a conductive film of a certain size. Note that a portion of the gate electrode is LDD (Lightly Dop The drain region or source region (or drain region) and the gate insulating film are separated. In some cases, they may overlap. Gate wiring refers to the gate electrode of each transistor. Wiring for connecting between them, wiring for connecting between the gate electrodes of each pixel, This refers to the wiring used to connect the gate electrode to another wire.

[0056] However, there are parts (regions, guides) that function as both gate electrodes and gate wiring. There are also areas (electrical films, wiring, etc.) that are gated. You can call it a pole, or you can call it gate wiring. In other words, the gate electrode and gate wiring are There are also areas where it is not possible to clearly distinguish between them. For example, the gate arrangement which is extended If a portion of the line and the channel area overlap, that portion (area, conductive film, wiring) These (etc.) function as gate wiring, but they also function as gate electrodes. Therefore, such parts (regions, conductive films, wiring, etc.) can be called gate electrodes. It can also be called gate wiring.

[0057] Furthermore, it is formed from the same material as the gate electrode and forms the same island as the gate electrode. The connected parts (regions, conductive films, wiring, etc.) can also be called gate electrodes. They are formed from the same material as the gate wiring and connect by forming the same islands as the gate wiring. The parts that are curved (regions, conductive films, wiring, etc.) can also be called gate wiring. A portion (region, conductive film, wiring, etc.) overlaps with the channel region in a strict sense. In some cases, it may not have the functionality to connect to another gate electrode, or it may not have the functionality to connect to another gate electrode. Due to manufacturing specifications and other factors, the gate electrode or gate wiring is formed from the same material as the gate. The portion (region) that forms an island and is connected to the same electrode or gate wiring. There are conductive films, wiring, etc. Therefore, such parts (regions, conductive films, wiring, etc.) are also gates. It can also be called a gate electrode or gate wiring.

[0058] For example, in a multi-gate transistor, one gate and another gate Electrodes are often connected by a conductive film made of the same material as the gate electrode. The parts (regions, conductive films, wiring, etc.) are for connecting gate electrodes. Since it is a segment (area, conductive film, wiring, etc.), it can also be called gate wiring, but multigate Since the transistor can be considered as a single transistor, it can also be called a gate electrode. Good. That is, it is formed from the same material as the gate electrode or gate wiring, and the gate electrode or gate The parts (regions, conductive films, wiring) that are connected to the same island as the wiring. The gate electrode and gate wiring can also be called gate electrodes or gate wiring. Furthermore, for example, gate electrodes and gates A conductive film in the part that connects to the wiring, and which is different from the gate electrode or gate wiring. A conductive film formed from a material can also be called a gate electrode or gate wiring.

[0059] Note that the gate terminal refers to the gate electrode portion (region, conductive film, wiring, etc.) or the gate electrode. Regarding the parts (regions, conductive films, wiring, etc.) that are electrically connected to the poles, a portion of them That is what they say.

[0060] Furthermore, certain wiring is referred to as gate wiring, gate line, gate signal line, scan line, scan signal line, etc. In some cases, the gate of the transistor may not be connected to that wiring. The gate wire, gate signal line, scan line, and scan signal line are the same as the gate of the transistor. Wiring formed in a single layer, wiring or transistor gate formed from the same material as the transistor gate This can sometimes refer to wiring that is deposited simultaneously with the gate of a zista. For example, retaining capacity These include wiring for general use, power lines, and reference potential supply wiring.

[0061] Note that the source refers to the source area, source electrode, and source wiring (source wire, source signal line, etc.). This refers to the entire system including data lines (also called data signal lines, etc.), or a part of it. The source region refers to P-type impurities (such as boron and gallium) and N-type impurities (such as phosphorus and arsenic). This refers to a semiconductor region that contains a large amount of P-type and N-type impurities. The region that includes this, the so-called LDD (Lightly Doped Drain) region It is not included in the source region. The source electrode is formed from a different material than the source region, and This refers to the conductive layer in the part that is electrically connected to the saw region. The source electrode is sometimes called the source electrode, including the source region. Source wiring refers to the wiring of each transistor. Wiring for connecting the source electrodes of the zista, connecting the source electrodes of each pixel. This refers to wiring used for a specific purpose, or wiring used to connect a source electrode to another wire.

[0062] However, there are parts that function as both source electrodes and source wiring. There are also areas (regions, conductive films, wiring, etc.). You can call it a source electrode, or you can call it a source wiring. In other words, source electrode and source wiring There are also areas where lines and other elements cannot be clearly distinguished. For example, extended and arranged lines - If a portion of the wiring and the source area overlap, that portion (area, conductive film) (Wiring, etc.) functions as source wiring, but also functions as source electrodes. Therefore, such parts (regions, conductive films, wiring, etc.) can be called source electrodes. That's fine, you could even call it source wiring.

[0063] Furthermore, it is formed from the same material as the source electrode and forms the same island as the source electrode. Connected parts (regions, conductive films, wiring, etc.) and the connections between source electrodes. The part (region, conductive film, wiring, etc.) can also be called the source electrode. Furthermore, the source region The overlapping portion can also be called the source electrode. Similarly, the same applies to the source wiring. There are also areas formed from the same material that are connected to the source wiring by forming islands. These can also be called source wiring. Such parts (regions, conductive films, wiring, etc.) are strictly defined. In terms of taste, it may not have the function to connect to a separate source electrode. However, during manufacturing Due to specifications and other factors, it is formed from the same material as the source electrode or source wiring, and the source electrode or It has parts (regions, conductive films, wiring, etc.) that are connected to the source wiring. The surrounding area (region, conductive film, wiring, etc.) can also be called the source electrode or source wiring.

[0064] For example, the conductive film in the part connecting the source electrode and the source wiring, A conductive film formed from a material different from the source electrode or source wiring can also be called a source electrode. Yes, you could also call it source wiring.

[0065] Note that the source terminal refers to the area of ​​the source region, the source electrode, or the electrical connection to the source electrode. It refers to a part of a component (region, conductive film, wiring, etc.) that has been treated.

[0066] Note that certain wiring may be referred to as source wiring, source line, source signal line, data line, data signal line, etc. When referring to it as such, there are cases where the source (drain) of the transistor is not connected to that wiring. In this case, source wiring, source lines, source signal lines, data lines, and data signal lines are traceable. Wiring formed on the same layer as the transistor's source (drain), transistor source (drain) Wiring or transistor source (drain) formed from the same material as the input (input) It can sometimes refer to covered wiring. Examples include wiring for retaining capacitance, power lines, and reference wiring. There are power supply wirings and so on.

[0067] The drain is the same as the source.

[0068] Note that semiconductor devices include semiconductor elements (transistors, diodes, thyristors, etc.). This refers to a device that has a circuit. Furthermore, it refers to all devices that can function by utilizing semiconductor properties. The general term can also be called a semiconductor device. Alternatively, a device having semiconductor materials can be called a semiconductor device. say.

[0069] Furthermore, a display device refers to a device that has a display element. It may include multiple pixels, including the one shown. Note that the display device has peripherals that drive multiple pixels. It may include a drive circuit. Note that a peripheral drive circuit that drives multiple pixels may also drive multiple pixels. It may be formed on the same substrate as the base material. Note that the display device may be formed using wire bonding or bumping. Peripheral drive circuits placed on the circuit board, also known as chip-on-glass (COG) circuits. It may include connected IC chips, or IC chips connected via TAB, etc. The display device includes IC chips, resistors, capacitives, inductors, transistors, etc. It may include a flexible printed circuit (FPC) to which the attachments are mounted. The display device is connected via a flexible printed circuit (FPC), and the IC chip Printed wiring with resistors, capacitors, inductors, transistors, etc. attached. It may also include a substrate (PWB). Note that the display device may include a polarizing plate or a phase difference plate, etc. It may include a learning sheet. The display device includes a lighting device, a housing, an audio input / output device, and light. It may include sensors, etc.

[0070] The lighting device consists of a backlight unit, light guide plate, prism sheet, diffuser sheet, and reflector. It has a sheet, a light source (LED, cold cathode tube, etc.), a cooling device (water-cooled, air-cooled), etc. That's good too.

[0071] A light-emitting device refers to a device that has light-emitting elements, etc. If it has an element, a light-emitting device is one example of a display device.

[0072] A reflective device is a device that has light-reflecting elements, light-diffracting elements, light-reflecting electrodes, etc. It refers to.

[0073] A liquid crystal display device is a display device that has liquid crystal elements. There are various types, including visual, projection, transmissive, reflective, and semi-transmissive.

[0074] Furthermore, a drive device refers to a device that has semiconductor elements, electrical circuits, or electronic circuits. For example... Then, a transistor (selection transistor) controls the input of the signal from the source signal line into the pixel. A transistor (sometimes called a switching transistor) applies voltage or current to the pixel electrode. The transistors that supply power, such as the transistors that supply voltage or current to the light-emitting element, are used for driving. This is an example of a device. Furthermore, it includes a circuit that supplies signals to the gate signal line (gate driver, gate (sometimes called a source signal drive circuit), a circuit that supplies a signal to the source signal line (source drive) Examples of drive devices include (sometimes called a source line drive circuit, etc.).

[0075] In addition, display devices, semiconductor devices, lighting devices, cooling devices, light-emitting devices, reflectors, drive devices, etc. These may overlap with each other. For example, a display device may have semiconductor equipment and light-emitting equipment. It may have a device. Alternatively, the semiconductor device may have a display device and a drive device. There are cases where this is the case.

[0076] Furthermore, it is not explicitly stated that B is formed on top of A, or that B is formed on top of A. When describing it, it is not limited to the case that B is formed in direct contact with A. This also includes cases where there is no intermediary object between A and B. Here, A and B are the objects (for example, devices, elements, circuits, wiring, electrodes, terminals, conductive films, layers, (and so on)

[0077] Therefore, for example, explicitly stating that layer B is formed on top of layer A (or on top of layer A) If present, this could mean that layer B is formed directly on top of layer A, or that layer B is directly on top of layer A Another layer (for example, layer C or layer D) is formed in contact with it, and layer B is directly in contact with it. This includes cases where a layer has been formed. Note that other layers (e.g., layer C or layer D) are single It can be a single layer or multiple layers.

[0078] Furthermore, the same applies when it is explicitly stated that B is formed above A. This is not limited to B being in direct contact with A, but also includes cases where another object is interposed between A and B. This includes cases where layer A is present. Therefore, for example, if layer B is formed above layer A, In this case, there are two situations: when layer B is formed in direct contact with layer A, and when layer B is formed in direct contact with layer A. Another layer (for example, layer C or layer D) is formed, and layer B is formed directly in contact with it. This includes cases where... Note that other layers (e.g., layer C or layer D) may be single layers. Stone, or even multiple layers, is acceptable.

[0079] Furthermore, B is formed on top of A, B is formed on top of A, or B is formed above A. When explicitly stating that something has been done, this includes cases where B is formed diagonally upwards. .

[0080] The same applies when B is below A, or when B is below A.

[0081] Furthermore, it is preferable that terms explicitly stated as singular remain singular. However, this is not limited to this, and there can be multiple. Similarly, explicitly as plural It is preferable that there be multiple items listed. However, this is not limited to this. It can also be singular.

[0082] Note that in the diagram, the size, layer thickness, or area may be exaggerated for clarity. Therefore, it is not necessarily limited to that scale.

[0083] Note that the figure is a schematic representation of an ideal example and is not limited to the shapes or values ​​shown in the figure. It cannot be fixed. For example, variations in shape due to manufacturing technology, variations in shape due to errors, noise Variations in signals, voltages, or currents, or signals, voltages, due to timing differences. Alternatively, it may include variations in current, etc.

[0084] Note that technical terms may be used to describe specific embodiments or examples. Many, but not limited to, this applies.

[0085] Furthermore, terms that are not defined (including scientific and technical terms such as specialized or academic terms) are generally... It can be used with the same meaning as the general meaning understood by those who are normally skilled in the art. (Dictionaries, etc.) The terminology defined therein should be interpreted in a way that is consistent with the context of the related technology. It is preferable.

[0086] Note that terms such as "1st," "2nd," and "3rd" refer to various elements, components, areas, layers, and regions that are separate from each other. It is used to distinguish and describe things. Therefore, terms such as "first," "second," and "third" refer to elements and parts. It does not limit the number of materials, areas, layers, zones, etc. Furthermore, for example, "the first" It can be replaced with "second" or "third," etc.

[0087] Also, "upwards," "upwards," "downwards," "sideways," "to the right," "to the left," Words indicating spatial arrangement, such as "diagonally," "further back," or "in front," can refer to a certain element or It is sometimes used to briefly illustrate, using diagrams, the relationship between a feature and other elements or features. There are many. However, this is not limited to these; the terms indicating these spatial arrangements are added in the direction they are depicted in the diagram. Furthermore, it is possible to include other directions. For example, when it is explicitly indicated as A on B. This is not limited to B being on top of A. The devices in the diagram may be inverted or rotated 180°. Since it is possible to do so, it is possible to include the case where B is below A. In this way, "above The phrase "ni" can include both the direction "upwards" and the direction "downwards." In addition, without being limited to this, since the device in the figure can rotate in various directions, the phrase " above" can include other directions such as "above", "below", "horizontally", "to the right", "to the left", "diagonally", "towards the back", or "towards the front" in addition to the directions of " above" and "below".

Advantages of the Invention

[0088] In the disclosed invention, a transistor having translucency or a capacitive element having translucency can be formed. Therefore, even when a transistor or a capacitive element is arranged in a pixel, light can be transmitted through the portion where the transistor or the capacitive element is formed, so that the aperture ratio can be improved. Further, the wiring connecting the transistor and an element (for example, another transistor), or the wiring connecting the capacitive element and an element (for example, another capacitive element) can be formed using a material with low resistivity and high conductivity, so that the waveform distortion of the signal can be reduced and the voltage drop due to the wiring resistance can be reduced.

[0089] [Figure 1] Top view for explaining a semiconductor device. [Figure 2] Cross-sectional view for explaining a semiconductor device. [Figure 3] Diagram for explaining a method of manufacturing a semiconductor device. [Figure 4] Diagram for explaining a method of manufacturing a semiconductor device. [Figure 5] Diagram for explaining a method of manufacturing a semiconductor device. [Figure 6] Diagram for explaining a multi-tone mask. [Figure 7] Diagram for explaining a method of manufacturing a semiconductor device. [Figure 8] Diagram for explaining a method of manufacturing a semiconductor device. [Figure 9] Figure for explaining a method of manufacturing a semiconductor device. [Figure 10] Figure for explaining a method of manufacturing a semiconductor device. [Figure 11] Top view for explaining a semiconductor device. [Figure 12] Cross-sectional view for explaining a semiconductor device. [Figure 13] Top view and cross-sectional view for explaining a semiconductor device. [Figure 14] Top view and cross-sectional view for explaining a semiconductor device. [Figure 15] Top view and cross-sectional view for explaining a semiconductor device. [Figure 16] Top view and cross-sectional view for explaining a semiconductor device. [Figure 17] Top view for explaining a semiconductor device. [Figure 18] Top view for explaining a semiconductor device. [Figure 19] Cross-sectional view for explaining a semiconductor device. [Figure 20] Cross-sectional view for explaining a semiconductor device. [Figure 21] Top view for explaining a semiconductor device. [Figure 22] Figure for explaining a semiconductor device. [Figure 23] Figure for explaining a semiconductor device. [Figure 24] Figure for explaining a semiconductor device. [Figure 25] Figure for explaining a semiconductor device. [Figure 26] Figure for explaining a semiconductor device. [Figure 27] Figure for explaining a semiconductor device. [Figure 28] Figure for explaining a semiconductor device. [Figure 29] Figure for explaining a semiconductor device. [Figure 30] Figure for explaining an electronic device. [Figure 31] Figure for explaining an electronic device. [Figure 32] Figure for explaining an electronic device. [Figure 33] Figure for explaining an electronic device. [Figure 34] A diagram for explaining an electronic device. [Figure 35] A cross-sectional view for explaining a semiconductor device. [Figure 36] A diagram for explaining a method of manufacturing a semiconductor device. [Figure 37] A top view for explaining a semiconductor device. [Figure 38] A top view for explaining a semiconductor device. [Figure 39] A top view for explaining a semiconductor device. [Figure 40] A top view for explaining a semiconductor device. [Figure 41] A diagram for explaining a semiconductor device. [Figure 42] A diagram for explaining a semiconductor device. [Figure 43] A diagram for explaining a semiconductor device. [Figure 44] A diagram for explaining a semiconductor device. [Figure 45] A diagram for explaining a semiconductor device. [Figure 46] A diagram for explaining a semiconductor device. [Figure 47] A diagram for explaining a semiconductor device. [Figure 48] A diagram for explaining a semiconductor device.

Embodiments for Carrying Out the Invention

[0090] The embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the description of the embodiments shown below, and it is obvious to those skilled in the art that the forms and details can be variously changed without departing from the spirit of the invention. In addition, in the configuration of the invention described below, the same reference numerals are used for the same part or parts having the same function, and the repeated description thereof is omitted.

[0091]

[0091] Other content (even partial content) described in the tone, and / or one or more other implementations To apply, combine, or replace the content described in the form (even if only a part of it is acceptable), It is possible to do things like this.

[0092] Furthermore, the content described in each embodiment refers to the use of various figures in each embodiment. This refers to the content stated, or the content stated using the text described in the specification.

[0093] Furthermore, a diagram (even a partial one) described in one embodiment may refer to another part of that diagram. Further figures (even partial ones) described in that embodiment, and / or one or more figures. In another embodiment, the diagram (or even just a part of it) described above can be combined by This allows for the creation of even more diagrams.

[0094] Furthermore, in the diagrams or text described in one embodiment, a portion thereof may be taken out. Thus, it is possible to constitute one aspect of the invention. Therefore, a diagram illustrating a certain part or If text is included, the content of a diagram or text extracted from that text is also considered part of the invention. This is disclosed as an embodiment, and it is possible to constitute one embodiment of the invention. Therefore, for example, active elements (transistors, diodes, etc.), wiring, passive elements (capacitive elements, resistive elements, etc.), conductive layers, insulating layers, semiconductor layers, organic materials, inorganic materials, components, Substrates, modules, devices, solids, liquids, gases, operating methods, manufacturing methods, etc., are listed singly or plurally. The included drawings (cross-sectional view, plan view, circuit diagram, block diagram, flowchart, process diagram, perspective view) Elevation drawings, layout drawings, timing charts, structural drawings, schematic diagrams, graphs, tables, optical path diagrams, vector diagrams (diagrams, phase diagrams, waveform diagrams, photographs, chemical formulas, etc.) or text, extracting a portion of it. This makes it possible to constitute one aspect of the invention.

[0095] (Embodiment 1) In this embodiment, a semiconductor device and a method for manufacturing the same will be described with reference to the drawings.

[0096] Figures 1 and 2 show an example configuration of the semiconductor device shown in this embodiment. Note that Figure 1 is a top view. Figure 2(A) corresponds to the cross-section between A and B in Figure 1, and Figure 2(B) corresponds to C- in Figure 1. This corresponds to the cross-section between points D.

[0097] The semiconductor device shown in Figure 1 has a pixel section provided with a transistor 152 and a retaining capacitance section 154. It has wires 150, 122, 124, and 126. Note that in Figure 1 The pixel portion 150 refers to the area surrounded by multiple wirings 122 and multiple wirings 126.

[0098] Furthermore, wiring 122 can function as gate wiring. Wiring 124 is capacity wiring It can function as a wire or common wiring. Wiring 126 functions as source wiring. It is possible to do so. However, it is not limited to these.

[0099] The transistor 152 has an electrode 132 provided on the substrate 100 and is provided on the electrode 132 An insulating layer 106, electrodes 136 and 138 provided on the insulating layer 106, and an insulating layer It is provided on electrode 106 so as to overlap with electrode 132 and is provided on electrode 136 and electrode 138 It has a semiconductor layer 112a (see Figure 2(A)).

[0100] Furthermore, electrode 132 can function as a gate electrode. The insulating layer 106 is a gate electrode. It can function as an insulating layer. Electrode 136 or electrode 138 is a source electrode or It can function as a drain electrode. The semiconductor layer 112a is made of an oxide semiconductor. It is possible, however, not limited to these.

[0101] The electrode 132 is provided with a light-transmitting conductive layer 102a, and is electrically connected to the wiring 122. They are connected precisely. Wiring 122 is provided in a laminated structure of conductive layer 102a and conductive layer 104a. It is also made of conductive layer 102a which constitutes electrode 132 and conductive layer which constitutes wiring 122 The electrode layer 102a is formed on the same island. The electrode 132 and the wiring 122 are the same By providing an island-shaped conductive layer 102a, the electrical connection between the electrode 132 and the wiring 122 is established. This can be done well. Also, the electrode 132 and the wiring 122 are connected to the same island-shaped conductive layer 102a By implementing this, the number of masks in the manufacturing process can be reduced, thereby lowering costs. Furthermore, an underlayment insulating layer may be provided between the substrate 100 and the electrode 132.

[0102] The conductive layer 102a is made of indium tin oxide (ITO). It can be provided with a light-transmitting material such as the conductive layer 102. It is sufficient to use a material with a lower resistivity than a, such as aluminum (Al) or tungsten. (W), Titanium (Ti), Tantalum (Ta), Molybdenum (Mo), Nickel (Ni), Platinum (Pt), copper (Cu), gold (Au), silver (Ag), manganese (Mn), neodymium (N) d) Metallic materials such as niobium (Nb), cerium (Ce), chromium (Cr), or similar materials. Alloy materials mainly composed of these metal materials, or nitrides composed of these metal materials These can be formed in a single layer or in a laminate. Generally, these metallic materials have light-shielding properties. Therefore, in the structure shown in Figure 1, the portion where electrode 132 is formed is translucent, and wiring 1 The portion where electrode 22 is formed will exhibit light-shielding properties compared to the portion where electrode 132 is formed. .

[0103] In the above, "translucent" means that at least the conductive layer 104a and the conductive layer 110a In comparison, it has a higher light transmittance in the visible range (approximately 400nm to 800nm). It tastes good.

[0104] Furthermore, it is preferable to form the conductive layer 104a thicker than the conductive layer 102a. When layer a is formed thickly, the wiring resistance can be reduced. Also, the conductive layer 102a When formed into a thin layer, the light transmittance can be improved. However, this is not limited to this. do not have.

[0105] In Figures 1 and 2, the wiring 122 is shown as a conductive layer 104a laminated on a conductive layer 102a. Although this example shows the case where the conductive layer 102a is laminated on the conductive layer 104a, the conductive layer 102a may also be laminated on top of the conductive layer 104a.

[0106] The electrode 136 is provided with a light-transmitting conductive layer 108a, and is electrically connected to the wiring 126. They are connected precisely. Wiring 126 is configured with a laminated structure of conductive layer 108a and conductive layer 110a. It is also made of conductive layer 108a which constitutes electrode 136 and conductive layer which constitutes wiring 126 The electrode layer 108a is formed in the same island. The electrode 136 and the wiring 126 are the same By providing an island-shaped conductive layer 108a, the electrical connection between the electrode 136 and the wiring 126 is established. This can be done effectively.

[0107] Furthermore, electrode 138 is provided with a light-transmitting conductive layer 108b. Electrode 136 and electrode Pole 138 can be formed using the same material.

[0108] The conductive layers 108a and 108b shall be made of a translucent material such as indium tin oxide. This can be done. Also, the conductive layer 110a can be made of a material with a lower resistivity than the conductive layer 108a. For example, aluminum (Al), tungsten (W), titanium (Ti), tantalum ( Ta), molybdenum (Mo), nickel (Ni), platinum (Pt), copper (Cu), gold (Au) ), silver (Ag), manganese (Mn), neodymium (Nd), niobium (Nb), cerium (C) e) Metallic materials such as chromium (Cr), or alloy materials mainly composed of these metallic materials or nitrides containing these metal materials can be used to form single or multilayer structures. Yes, it is possible. Generally, metal materials have light-shielding properties, so in the structure shown in Figure 1, electrode 136 The formed portion is translucent, and the portion where the wiring 126 is formed has electrodes 136 formed thereon. This will result in light-blocking properties compared to the other parts.

[0109] Furthermore, it is preferable to form the conductive layer 110a thicker than the conductive layers 108a and 108b. When the conductive layer 110a is formed thickly, the wiring resistance can be reduced. When 108a and 108b are formed in a thin layer, the transmittance can be improved. However, This is not limited to this.

[0110] The wiring 124 is preferably formed using a light-transmitting conductive layer 102b. As shown in Figures 1 and 2, the region where wiring 124 and wiring 126 overlap (and the surrounding region) In this configuration, a conductive layer 102b and a conductive layer 104b with lower resistance than the conductive layer 102b are laminated together. It can be constructed. As shown in Figures 1 and 2, by forming the wiring 124, The aperture ratio of the base part 150 is improved, and the wiring resistance of the wiring 124 is reduced, resulting in lower power consumption. This can be achieved. Of course, the wiring 124 is not just the light-transmitting conductive layer 102b. Alternatively, it is possible to provide it using only the conductive layer 104b.

[0111] The holding capacitance section 154 has an insulating layer 106 as a dielectric, and a light-transmitting conductive layer 102b and light-transmitting The conductive layer 108c, which has conductivity, is configured as an electrode. It is electrically connected to layer 116. The electrical connection between conductive layer 108c and conductive layer 116 is This can be done through contact holes formed in the insulating layer 114, which functions as an interlayer film. Yes, it is possible. Furthermore, the conductive layer 116 can function as a pixel electrode.

[0112] Furthermore, the insulating layer 106 and insulating layer 114 are used as dielectrics for the holding capacitance section 154, and the conductive layer 1 Alternatively, the 02b and conductive layer 116 may be used as electrodes (see Figure 35(A)). Also, in Figure 35(A), the insulating layer 114 is made of an inorganic material (such as silicon nitride). A structure is used in which an edge layer 114a and an insulating layer 114b made of an organic material are sequentially laminated, and the holding capacity In section 154, the insulating layer 114b made of organic material is removed, and as the holding capacitance section 154, The insulating layer 106 and the insulating layer 114a are dielectrics, and the conductive layer 102b and the conductive layer 116 are electrodes. It may also be used in this configuration (see Figure 35(B)).

[0113] As shown in Figures 1 and 2, the holding capacity section 154 is provided using a light-transmitting material. Therefore, light can be transmitted even in the region where the holding capacity portion 154 is formed. This allows for an improvement in the aperture ratio of the pixel section 150.

[0114] Furthermore, by using a transparent conductive layer as the electrode for the holding capacity section 154, This allows the holding capacity section 154 to be enlarged without reducing the opening ratio. By making 4 larger, even when transistor 152 is turned off, the conductive layer The potential retention characteristics of 116 are improved, and the display quality can be improved. Also, feeds The field-through potential can be reduced. By reducing the field-through potential, the positive It can apply a precise voltage and reduce flickering. It also improves noise immunity. By doing so, crosstalk can be reduced.

[0115] The conductive layer 116 is electrically connected to the electrode 138 and the conductive layer 108c.

[0116] As described above, electrode 132, semiconductor layer 112a, electrode 136, electrode 138, holding capacitance part 1 By forming 54 with a translucent material, the region on which the transistor 152 is formed Because light can be transmitted in the region where the area and the holding capacity portion 154 are formed, The aperture ratio of the base part 150 can be improved. Also, wiring 122, wiring 126, wiring 1 By providing a conductive layer made of a metal material with low resistivity for part of 24, the wiring resistance is reduced. It can be reduced. As a result, waveform distortion can be reduced. Also, power consumption This can be reduced.

[0117] Typically, gate wiring and gate electrodes, and source wiring and source electrodes are formed on the same island. Therefore, the gate electrode, source electrode, and drain electrode are made of a light-transmitting material. When provided in this manner, the gate wiring and source wiring, etc., are also formed from a light-transmitting material. However, transparent materials, such as indium tin oxide, indiu Indium tin zinc oxide, etc., are materials that have light-shielding and reflective properties, for example Metal materials such as aluminum, molybdenum, titanium, tungsten, neodymium, copper, and silver. In comparison, its low conductivity makes it difficult to sufficiently reduce wiring resistance. For example, large When manufacturing display devices, the wiring becomes long, which tends to result in very high wiring resistance. Thus, as described above, electrode 132, semiconductor layer 112a, electrode 136, electrode 138, retainer The capacity section 154 is formed of a light-transmitting material, and the wiring 122, wiring 126, and wiring 124 By providing a conductive layer made of a metal material with low resistivity in part of the structure, these problems can be solved. It can be solved.

[0118] Furthermore, the conductive layer 104a that constitutes the gate wiring and the conductive layer 110a that constitutes the source wiring By forming it using a light-shielding metal material, wiring resistance is reduced, and adjacent The area between the pixel parts can be shielded from light. In other words, the gates arranged in the row direction By using wiring and source wiring arranged in the column direction, a black matrix is ​​not used. This makes it possible to block light in the area between pixels. Of course, a separate black matrix can be provided. You may want to block out light more effectively.

[0119] In addition, the structure shown in Figures 1 and 2 may be configured without the holding capacity section 154. In this case, wiring 124 is also unnecessary.

[0120] Next, please refer to Figures 3 to 5 for an example of a semiconductor device fabrication method as shown in Figures 1 and 2 above. I will explain it.

[0121] First, a conductive film 102 is formed on the substrate 100 (see Figure 3(A)). Substrate 100 and conductive film A base insulating film may be formed between 102.

[0122] For example, a glass substrate can be used as the substrate 100. And, insulating substrates made of insulators such as ceramic substrates, quartz substrates and sapphire substrates, silico A semiconductor substrate made of semiconductor materials such as stainless steel, with its surface coated with an insulating material, or metal or stainless steel. A conductive substrate made of a conductive material such as a conductive material, with its surface coated with an insulating material, can be used. Also, if it can withstand the heat treatment during the manufacturing process, a plastic substrate can be used. .

[0123] The conductive film 102 can be formed using a translucent material. Examples of materials used include indium tin oxide. ITO), indium tin oxide containing silicon dioxide (ITSO), organodindium, organotin Zinc oxide (ZnO), etc., can be used. In addition, indium zinc acid containing zinc oxide can be used. Indium zinc oxide (IZO), zinc oxide with gallium (Ga) Doped materials, tin oxide (SnO2), indium oxides including tungsten oxide, acid Indium zinc oxide containing tungsten oxide, indium oxide containing titanium oxide, oxide Titanium-containing indium tin oxide, etc., may also be used. These materials are subjected to the sputtering method. It can be formed as a single-layer structure or a laminated structure. However, if a laminated structure is used... It is desirable to ensure a sufficiently high light transmittance in the laminated structure.

[0124] Next, a resist mask 161 is formed on the conductive film 102, and the resist mask 161 is used By etching the conductive film 102, the island-shaped conductive layer 102a and conductive layer 102 Forms b (see Figure 3(B)).

[0125] The conductive layer 102a functions as part of the wiring 122 and the electrode 132. 2b functions as part of wiring 124.

[0126] Next, a conductive film 104 is formed on the substrate 100, conductive layer 102a, and conductive layer 102b (Figure (See 3(C)).

[0127] The conductive film 104 can be aluminum (Al), tungsten (W), titanium (Ti), Tantalum (Ta), molybdenum (Mo), nickel (Ni), platinum (Pt), copper (Cu) Gold (Au), Silver (Ag), Manganese (Mn), Neodymium (Nd), Niobium (Nb), Ce Metallic materials such as lium (Ce) and chromium (Cr), or materials mainly composed of these metallic materials Formed in a single layer or in layers using alloy materials or nitrides composed of these metallic materials. It is possible to form it from a low-resistance conductive material such as aluminum. stomach.

[0128] When a conductive film 104 is formed on conductive layers 102a and 102b, the two films react with each other. In some cases, this can happen. For example, if ITO is used as the conductive layers 102a and 102b, the conductive film 10 If aluminum is used as component 4, a chemical reaction may occur. Therefore, To avoid chemical reactions, between the conductive layers 102a and 102b and the conductive film 104 It is desirable to use a high-melting-point material. For example, molybdenum is an example of a high-melting-point material. Examples include titanium, tungsten, tantalum, and chromium. Furthermore, high melting point materials are used. It is preferable to form a multilayer conductive film 104 on the film using a highly conductive material. Materials with high conductivity include aluminum, copper, and silver. For example, conductive When forming the film 104 in a layered structure, the first layer is molybdenum, the second layer is aluminum, The third layer is made of molybdenum, or the first layer is molybdenum and the second layer is made of a small amount of neodymium. The third layer can be formed by laminating aluminum and molybdenum. This can prevent hillocks.

[0129] Next, a resist mask 162 is formed on the conductive film 104, and the resist mask 162 is used By etching the conductive film 104, island-shaped conductive layers 104a and conductive layer 104 Forms b (see Figure 3(D)).

[0130] In this case, the conductive film 104 formed on the conductive layer 102a which functions as an electrode 132, and the wiring The conductive film 104 provided in the region where the pixel portion is located in 124 is removed.

[0131] The conductive layer 104a functions as part of the wiring 122. Also, the conductive layer 104b functions as part of the wiring 1 It functions as part of 24.

[0132] Furthermore, in Figure 3(D), the width of the conductive layer 104a is made smaller than the width of the conductive layer 102a. When forming the conductive layer 104b such that its width is smaller than the width of the conductive layer 102b, This is shown, but is not limited to this. The width of conductive layer 104a is made larger than the width of conductive layer 102a. Alternatively, a conductive layer 104a may be formed to cover the conductive layer 102a, or a conductive layer 104b The width of the conductive layer 104b is made larger than the width of the conductive layer 102b, so that the conductive layer 104b covers the conductive layer 102b. It may form.

[0133] Next, an insulating layer 106 covers the conductive layers 102a, 102b and conductive layers 104a, 104b. A layer is formed, and then a conductive film 108 is formed on the insulating layer 106 (see Figure 3(E)).

[0134] The insulating layer 106 may be a silicon oxide film, a silicon oxide nitride film, a silicon nitride film, or an acid nitride film. Silicon film, aluminum oxide film, aluminum nitride film, aluminum oxide nitride film, nitriding It can be provided as a single layer or a laminate of aluminum oxide film or tantalum oxide film. The edge layer 106 is formed with a thickness of 50 nm to 250 nm using a sputtering method or the like. This can be done. For example, as the insulating layer 106, a silicon oxide film can be made by sputtering or CVD. It can be formed to a thickness of 100 nm. Alternatively, aluminum oxide can be formed by sputtering. A film can be formed with a thickness of 100 nm.

[0135] The conductive film 108 can be formed using a translucent material. Examples of materials used include indium tin oxide. ITO), indium tin oxide containing silicon dioxide (ITSO), organodindium, organotin Zinc oxide (ZnO), etc., can be used. In addition, indium zinc acid containing zinc oxide can be used. Indium zinc oxide (IZO), zinc oxide with gallium (Ga) Doped materials, tin oxide (SnO2), indium oxides including tungsten oxide, acid Indium zinc oxide containing tungsten oxide, indium oxide containing titanium oxide, oxide Titanium-containing indium tin oxide, etc., may also be used. These materials are subjected to the sputtering method. It can be formed as a single-layer structure or a laminated structure. However, if a laminated structure is used... It is desirable to ensure that the light transmittance of all multiple films is sufficiently high.

[0136] Next, a resist mask 163 is formed on the conductive film 108, and the resist mask 163 is used By etching the conductive film 108, island-shaped conductive layers 108a and conductive layer 108b are formed. This forms a conductive layer 108c (see Figure 4(A)).

[0137] The conductive layer 108a functions as part of the wiring 126 and as an electrode 136. 8b functions as electrode 138. Also, conductive layer 108c is one of the holding capacitance portion 154. It functions as an electrode.

[0138] Furthermore, it is preferable to form the ends of the conductive layer 108b in a tapered shape. Later, the conductive layer 108 This is because it prevents the semiconductor layer formed on b from having a step break.

[0139] Next, a conductive film 110 is formed to cover the conductive layers 108a to 108c (see Figure 4(B)). ).

[0140] The conductive film 110 includes aluminum (Al), tungsten (W), titanium (Ti), Tantalum (Ta), molybdenum (Mo), nickel (Ni), platinum (Pt), copper (Cu) Metal materials such as gold (Au), silver (Ag), manganese (Mn), neodymium (Nd), and This refers to alloy materials mainly composed of these metal materials, or nitrides composed of these metal materials. It can be formed using materials in a single layer or in a laminated structure. Low-resistance conductive materials such as aluminum. It is preferable to form it with [material].

[0141] When a conductive film 110 is formed on conductive layers 108a to 108c, the two films react with each other. In some cases, this can happen. For example, if ITO is used as the conductive layer 108a~108c, the conductive film 11 If aluminum is used as the base material (0), a chemical reaction may occur. Therefore, To avoid chemical reactions occurring, between the conductive layers 108a-108c and the conductive film 110 It is desirable to use a high-melting-point material. For example, molybdenum is an example of a high-melting-point material. Examples include titanium, tungsten, tantalum, and chromium. Furthermore, high melting point materials are used. It is preferable to form a multilayer conductive film 110 on top of the film using a highly conductive material. Materials with high conductivity include aluminum, copper, and silver. For example, conductive When forming the film 110 in a layered structure, the first layer is molybdenum, the second layer is aluminum, The third layer is made of molybdenum, or the first layer is molybdenum and the second layer is made of a small amount of neodymium. The third layer can be formed by laminating aluminum and molybdenum. This can prevent hillocks.

[0142] Next, a resist mask 164 is formed on the conductive film 110, and the resist mask 164 is used By etching the conductive film 110, island-shaped conductive layers 110a are formed (Figure 4). (See (C)).

[0143] Specifically, etching is performed so that the conductive film 110 remains on the conductive layer 108a. In this case, the conductive film 110 formed on the conductive layer 108a, which functions as an electrode 136, is removed. In other words, the conductive layer 110a functions as part of the wiring 126.

[0144] Next, a translucent semiconductor film is applied to cover the conductive layers 108a, 108b, the insulating layer 106, etc. Forms 112 (see Figure 4(D)).

[0145] For example, an oxide semiconductor containing In, M, or Zn can be used as the semiconductor film 112. This can be done. Here, M is one gold selected from Ga, Fe, Ni, Mn, or Co. This indicates a group element or multiple metallic elements. Also, when Ga is used as M, this thin film is represented as In -Also called a Ga-Zn-O non-single crystal film. Furthermore, in the above oxide semiconductor, M is included In addition to the metallic elements present, impurity elements may include Fe, Ni, and other transition metal elements, or the transition metal elements. Some contain metal oxides. Also, the semiconductor film 112 contains insulating impurities. It is acceptable to mix them in. Examples of such impurities include silicon oxide, germanium oxide, and aluminum oxide. Insulating oxides such as silicon nitride and aluminum nitride are representative of insulating materials. Insulating oxynitrides, such as silicon oxynitride or aluminum oxynitride, are applied. These insulating oxides or insulating nitrides impair the electrical conductivity of oxide semiconductors. It is added at a concentration that does not cause oxidation. By including insulating impurities in the oxide semiconductor, the oxidation Crystallization of material semiconductors can be suppressed. By suppressing the crystallization of oxide semiconductors, This makes it possible to stabilize the characteristics of thin-film transistors.

[0146] By incorporating impurities such as silicon oxide into the In-Ga-Zn-O oxide semiconductor... Even after heat treatment at 300°C to 600°C, the crystallization of the oxide semiconductor or the formation of microcrystalline grains does not occur. This prevents the formation of a channel. The In-Ga-Zn-O oxide semiconductor layer is used as the channel formation region. In the manufacturing process of thin-film transistors, heat treatment is performed to increase the S value (subthreshold). It is possible to improve the d swing value and field effect mobility, Even in such cases, it is possible to prevent the thin-film transistor from becoming normally-on. Furthermore, even if thermal stress and bias stress are applied to the thin-film transistor, This prevents fluctuations in the voltage value.

[0147] In addition to the above, other oxide semiconductors are also used for the channel formation region of thin-film transistors. -Sn-Zn-O system, In-Al-Zn-O system, Sn-Ga-Zn-O system, Al-Ga- Zn-O series, Sn-Al-Zn-O series, In-Zn-O series, Sn-Zn-O series, Al-Z Oxide semiconductors based on nO, In-O, Sn-O, and Zn-O can be applied. In other words, impurities that suppress crystallization and maintain an amorphous state are added to these oxide semiconductors. By obtaining this, the characteristics of thin-film transistors can be stabilized. This impurity is Insulating oxides such as silicon oxide, germanium oxide, and aluminum oxide, Insulating nitrides such as silicon nitride and aluminum nitride, or silicon oxynitride These include insulating oxynitrides such as aluminum oxynitride.

[0148] As an example, an oxide semiconductor target containing In, Ga, and Zn (In2O3:Ga2 A semiconductor film 112 can be formed by sputtering using O3:ZnO=1:1:1. Yes. As for the sputtering conditions, for example, the distance between the substrate 100 and the target is 30mm~ 500mm, pressure 0.1Pa~2.0Pa, DC power supply 0.25kW~5.0 kW (when using an 8-inch diameter target), atmosphere: argon atmosphere, oxygen atmosphere, or A mixed atmosphere of argon and oxygen can be used. The thickness of the semiconductor film 112 is 5 nm~ A value of around 200 nm would suffice.

[0149] The sputtering methods mentioned above include RF sputtering, which uses a high-frequency power supply for sputtering, and D This method uses techniques such as C-sputtering and pulsed DC sputtering, which applies a DC bias in a pulsed manner. RF sputtering is mainly used when depositing insulating films, while DC sputtering is It is mainly used when depositing metal films.

[0150] Alternatively, a multi-target sputtering system capable of setting up multiple targets of different materials may be used. In a sputtering apparatus, it is possible to layer different films in the same chamber, or in the same chamber... It is also possible to sputter multiple types of materials simultaneously to form a single film. Furthermore, the chamber - A method using a magnetron sputtering apparatus equipped with a magnetic field generation mechanism inside (magnetron This method uses methods such as the sputtering method and the ECR sputtering method, which uses plasma generated using microwaves. It is also possible to chemically react the target material with the sputtering gas components during film formation. Reactive sputtering, which forms these compounds, and vias, which apply voltage to the substrate during film deposition. Sputtering or other similar methods may also be used.

[0151] Furthermore, the semiconductor material used as the channel layer of transistor 152 is an oxide semiconductor. It is not limited to this. For example, silicon layers (amorphous silicon layer, microcrystalline silicon layer, multicrystalline silicon layer) Even if a crystalline silicon layer or single-crystal silicon layer is used as the channel layer of transistor 152 Good. In addition, a translucent organic semiconductor material can be used as the channel layer of transistor 152. Carbon nanotubes, compound semiconductors such as gallium arsenide and indium phosphide may also be used. Furthermore, the semiconductor layer being translucent means that at least the conductive layer 1 constituting the wiring 122 is transparent. 04a. It is sufficient if the conductive layer 110a constituting the wiring 126 is more transparent to light.

[0152] In this embodiment, the formation of conductive layers (conductive layer 108a, conductive layer 108b, conductive layer 110a) Later, in order to provide the semiconductor film 112, the semiconductor film 112 is etched during the etching of these conductive layers. It is not etched. Therefore, it is possible to form a thin semiconductor film 112. By providing a thin semiconductor film 112, light transmittance is improved and a depletion layer is formed. This makes it easier. As a result, the S value of the transistor is reduced, and the switching of the transistor becomes easier. This makes it possible to improve the characteristics. Furthermore, the off-current can also be reduced.

[0153] Furthermore, the thickness of the semiconductor film 112 is formed to be thinner than that of the conductive layers 108a and 108b. This is preferable, however, it is not limited to this.

[0154] Next, a resist mask 165 is formed on the semiconductor film 112, and the resist mask 165 is By etching the semiconductor film 112 using this method, island-shaped semiconductor layers 112a are formed. (See Figure 5(A)).

[0155] Furthermore, even if the semiconductor layer 112a is formed before the conductive film 110 is formed (after Figure 4(A)), Good. In this case, after performing the process shown in Figure 4(A), the semiconductor film 112 is formed and etched. This will form an island-shaped semiconductor layer 112a, and then the conductive film 110 can be formed. .

[0156] Furthermore, after forming the semiconductor layer 112a, under a nitrogen atmosphere or an air atmosphere, 100 Heat treatment at temperatures between ℃ and 600℃, typically between 200℃ and 400℃, is preferable. For example, A heat treatment can be performed at 350°C for 1 hour under a nitrogen atmosphere. This heat treatment can cause island-like formations. The semiconductor layer 112a undergoes atomic-level rearrangement. This heat treatment (including photo-annealing, etc.) This is because it can release the strain that hinders carrier movement in the island-shaped semiconductor layer 112a. This is important. The timing of the above heat treatment is after the formation of the semiconductor film 112. It is not particularly limited.

[0157] Next, the semiconductor layer 112a, wiring 126, electrode 136, electrode 138, and conductive layer 108c are covered An insulating layer 114 is formed in this manner (see Figure 5(B)).

[0158] The insulating layer 114 contains silicon oxide, silicon nitride, silicon oxide nitride, silicon nitride oxide, and other materials containing oxygen or nitrogen. Insulating films, films containing carbon such as DLC (diamond-like carbon), epoxy, Polyimide, polyamide, polyvinylphenol, benzocyclobutene, acrylic, etc. A film made of mechanical material or siloxane material such as siloxane resin is provided in a single-layer or multi-layer structure. It is possible.

[0159] Furthermore, the insulating layer 114 can also function as a color filter. Substrate 1 By providing a color filter on the 00 side, it becomes unnecessary to provide a color filter on the opposing substrate side. This eliminates the need for a margin to adjust the position of the two circuit boards, thus eliminating the need for a margin in the panel. Manufacturing can be made easier.

[0160] Next, a conductive layer 116 is formed on the insulating layer 114 (see Figure 5(C)). The conductive layer 116 is They can function as pixel electrodes and are formed to be electrically connected to the conductive layer 108c. do.

[0161] The conductive layer 116 can be formed using a translucent material. Examples of materials used include indium tin oxide. ITO), indium tin oxide containing silicon dioxide (ITSO), organodindium, organotin Zinc oxide (ZnO), etc., can be used. In addition, indium zinc acid containing zinc oxide can be used. Indium zinc oxide (IZO), zinc oxide with gallium (Ga) Doped materials, tin oxide (SnO2), indium oxides including tungsten oxide, acid Indium zinc oxide containing tungsten oxide, indium oxide containing titanium oxide, oxide Titanium-containing indium tin oxide, etc., may also be used. These materials are subjected to the sputtering method. It can be formed as a single-layer structure or a laminated structure. However, if a laminated structure is used... It is desirable to make the light transmittance of all of the multiple films sufficiently high. Specifically, in the pixel area To enhance light transmission, the conductive layer 116 is made thinner than conductive layers 102a and 108a. It is preferable to do so, but it is not limited to this.

[0162] By following the above steps, a semiconductor device can be manufactured. This forms a light-transmitting transistor 152 and a light-transmitting retaining capacitance portion 154. This is possible. Therefore, when placing transistors or capacitive elements within a pixel, Furthermore, it is possible to transmit light even in the parts where transistors and capacitive elements are formed. Therefore, the aperture ratio can be improved. Furthermore, the transistor and elements (for example, another transistor) The wiring connecting the inverter can be formed using a material with low resistivity and high conductivity. Therefore, it is possible to reduce signal waveform distortion and reduce voltage drop due to wiring resistance. ru.

[0163] Furthermore, in this embodiment, the structure is such that a semiconductor layer 112a is provided on electrodes 136 and 138. Although the (bottom contact type) has been shown, it is not limited to this. For example, semiconductor layer 112 A structure in which electrodes 136 and 138 are provided on a (channel etch type) may also be used (Figure 4). (See 5). Note that Figure 45(A) is a top view, and Figure 45(B) is the same as A in Figure 45(A). - This corresponds to the cross-section between B.

[0164] The structure shown in Figure 45 is formed in Figure 3(E) above by forming a semiconductor film 112 on the insulating layer 106. It is obtained by forming a conductive film 108 after patterning.

[0165] Furthermore, in the structure shown in Figure 45, a channel protective film functions on the semiconductor layer 112a. A structure with an insulating layer 127 (channel protection type) may also be used (see Figure 46(A)). By providing layer 127, when patterning the conductive film 108, the semiconductor layer 112a It can be protected.

[0166] (Embodiment 2) In this embodiment, a method for manufacturing a semiconductor device different from that of Embodiment 1 is described with reference to the drawings. Let me explain in detail. Specifically, I will discuss the case of fabricating semiconductor devices using a multi-gradation mask. Let me explain. Note that the manufacturing process of the semiconductor device in this embodiment is largely based on the actual implementation. This is common to state 1. Therefore, in the following, the overlapping parts will be omitted, and the differences will be highlighted. I will explain this in detail.

[0167] First, a conductive film 102 is formed on the substrate 100, and then a conductive film 104 is formed on the conductive film 102. This is achieved (see Figure 7(A)). A base insulating film may be provided between the substrate 100 and the conductive film 102. .

[0168] Next, resist masks 171a to 171c are formed on the conductive film 104 (see Figure 7(B)). ).

[0169] Resist masks 171a to 171c use multi-gradation masks, resulting in different thicknesses. A resist mask can be selectively formed.

[0170] A multi-gradation mask is a mask that allows exposure at multiple levels of light intensity. Typical examples include: Exposure is performed using three levels of light intensity: exposed area, partially exposed area, and unexposed area. A multi-gradation mask is used. By doing so, multiple (typically two) thicknesses can be obtained through a single exposure and development process. A resist mask can be formed. Therefore, by using a multi-level mask, The number of tonal masks can be reduced. See Figure 6 below for an example using a multi-tone mask. Let's explain the light transmittance in this case.

[0171] Figure 6 shows a cross-section of a typical multi-tone mask. Figure 6(A-1) is a gray tone mask 40 Figure 6(B-1) shows the case where 3 is used, and Figure 6(B-1) shows the case where halftone mask 414 is used. It is.

[0172] The gray tone mask 403 shown in Figure 6(A-1) has a light-shielding layer on a light-transmitting substrate 400. A light-shielding portion 401 formed by the light-shielding layer, and a diffraction grating 402 provided by the pattern of the light-shielding layer. It is composed of.

[0173] The diffraction grating 402 has slits and dots spaced at intervals less than the resolution limit of the light used for exposure. The light transmittance is controlled by having a grating or mesh. The slits, dots, or meshes may be periodic or aperiodic. That's fine.

[0174] As the light-transmitting substrate 400, quartz or the like can be used. The light-shielding layer constituting the lattice 402 may be formed using a metal film, preferably chromium or It is provided by chromium oxide or the like.

[0175] When light is shone onto the gray tone mask 403 for exposure, it will look like Figure 6(A-2). Therefore, the light transmittance in the region superimposed on the light-shielding portion 401 becomes 0%, and the light-shielding portion 401 or diffraction The light transmittance in the region where the grid 402 is not provided can be set to 100%. The light transmittance in diffraction grating 402 is generally in the range of 10% to 70%, and the diffraction grating's sliding It can be adjusted by changing the spacing of the dots or mesh.

[0176] The halftone mask 414 shown in Figure 6(B-1) is semitransparent on a translucent substrate 411. It consists of a semi-transparent portion 412 formed by a light layer and a light-shielding portion 413 formed by a light-shielding layer. It is being done.

[0177] The semi-transparent portion 412 is made of layers of MoSiN, MoSi, MoSiO, MoSiON, CrSi, etc. It can be formed using the same method. The light-shielding portion 413 is similar to the light-shielding layer of the gray tone mask. It can be formed using a metal film, preferably made of chromium or chromium oxide.

[0178] When light is shone onto the halftone mask 414 for exposure, it will look like Figure 6(B-2). Therefore, the light transmittance in the region superimposed on the light-shielding portion 413 becomes 0%, and the light-shielding portion 413 or semi-transparent The light transmittance in the region where the light-emitting section 412 is not provided can be set to 100%. The transmittance in the semi-transparent portion 412 is generally in the range of 10% to 70%, and the material formed... It can be adjusted depending on the type or the thickness of film to be formed.

[0179] As described above, by using a multi-tone mask, the exposed area, the mid-exposed area, and the unexposed area can be clearly defined. It is possible to form a mask with three exposure levels in a portion, and in a single exposure and development process This allows for the formation of a resist mask having multiple (typically two) thickness regions. Therefore, by using a multi-tone mask, the number of photomasks can be reduced. ru.

[0180] Figure 7(B) shows the case where a halftone mask is used as a multi-tone mask. The halftone mask consists of a light-transmitting substrate 180 and a light-shielding layer provided on the substrate 180. It is composed of 181a, 181c and semi-permeable layers 181b and 181d. Therefore, it is conductive. On the film 104 there is a thick resist mask 171a, a thin resist mask 171b, and a thick part A resist mask 171c having a thin portion is formed.

[0181] Next, using resist masks 171a to 171c, the conductive film 102 and conductive film 104 are inspected. The essential parts are etched, and conductive layer 102a, conductive layer 102b, conductive layer 104a', conductive layer It forms 104b' (see Figure 7(C)).

[0182] Next, the resist masks 171a to 171c are subjected to ashing with oxygen plasma. The resist masks 171a to 171c are subjected to ashing with oxygen plasma. As a result, the resist mask 171b is removed, and the conductive layer 1 is formed on the conductive layer 102a. Part of 04a' is exposed. Also, the resist masks 171a and 171c are reduced in size, and the resist These remain as tomasks 171a' and 171c' (see Figure 8(A)). Thus, the register By using a multi-level mask as the resist mask, an additional resist mask can be used. This eliminates the need for a specific step, thus simplifying the process.

[0183] Next, using the resist masks 171a' and 171c', the exposed conductive layer 104a' and By etching the conductive layer 104b', conductive layers 104a and 104b are formed This is achieved (see Figure 8(B)). In this case, the conductive layer 102a that functions as the electrode 132 is formed on top of it. The conductive layer 104a' that was formed and the region in the wiring 124 that is arranged in the pixel area Remove the conductive layer 104b'.

[0184] As a result, electrode 132 is formed of a light-transmitting conductive layer 102a, and wiring 122 is light-transmitting A laminated structure comprising a conductive layer 102a having a conductive layer 102a and a conductive layer 104a with lower resistance than the conductive layer 102a. It is formed by construction.

[0185] Thus, the conductive layer 102a, which functions as an electrode 132, is formed from a light-transmitting material. This improves the aperture ratio of the pixel area. Also, it functions as wiring 122. The conductive layer is the conductive layer constituting the electrode 132 (here, conductive layer 102a), and the conductive layer By forming a conductive layer 104a using a metal material with a lower resistivity than the electrical layer 102a, This reduces wiring resistance and waveform distortion. As a result, it enables low power consumption. This allows for further optimization. Furthermore, the wiring 122 is a conductive layer with light-shielding properties (here, a conductive layer). By using the electrolytic layer 104a), it is possible to shield the area between adjacent pixels from light. Therefore, the black matrix can be omitted. However, it is not limited to this. .

[0186] Furthermore, by using a multi-gradation mask, the conductive layer 102a and conductive layer 10 which form the wiring 122 4a refers to the fact that each layer has a different surface area. In other words, the surface area of ​​the conductive layer 102a The product is greater than the surface area of ​​conductive layer 104a. Similarly, the product of conductive layer 102b The surface area of ​​the conductive layer 104b becomes larger than the surface area of ​​the conductive layer 104b.

[0187] Next, cover conductive layer 102a, conductive layer 102b, conductive layer 104a, and conductive layer 104b After forming the insulating layer 106, the conductive film 108 and the conductive film 110 are applied sequentially on the insulating layer 106. It is formed by layering (see Figure 8(C)).

[0188] Next, resist masks 172a to 172d are formed on the conductive film 110 (see Figure 9(A)). ).

[0189] Resist masks 172a to 172d use multi-gradation masks, resulting in different thicknesses. A resist mask can be formed.

[0190] Figure 9(A) shows the case where a halftone mask is used as a multi-tone mask. The halftone mask consists of a light-transmitting substrate 182 and a semi-transparent material provided on the substrate 182. It is composed of layers 183a and 183d and light-shielding layers 183b, 183c, and 183e. Therefore, a thick resist mask 172c and a thin resist mask 172b are placed on the conductive film 110. 172d, a resist mask 172a having thick and thin portions is formed.

[0191] Next, using resist masks 172a to 172d, the conductive film 108 and conductive film 110 are inspected. The essential parts are etched, and conductive layers 108a to 108c and conductive layers 110a' to conductive layer It forms 110c' (see Figure 9(B)).

[0192] Next, the resist masks 172a to 172d are subjected to ashing with oxygen plasma. The resist masks 172a to 172d are subjected to ashing with oxygen plasma. As a result, the resist masks 172b and 172d are removed, and the conductive layers 110b' and 110c are removed. ' is exposed. Also, resist masks 172a and 172c are reduced in size, and resist mask 17 These remain as 2a' and 172c' (see Figure 9(C)). In this way, the resist mask and By using a multi-level mask, the need for additional resist masks is eliminated. Therefore, the process can be simplified.

[0193] Next, using resist masks 172a' and 172c', a portion of the conductive layer 110a' is used. By etching layer 110b' and conductive layer 110c', a conductive layer 110a is formed. (See Figure 10(A)). In this case, the conductive layer 110a' is formed on the conductive layer 108a. A portion of the conductive layer 110b' formed on conductive layer 108b and a conductive layer 108c formed on conductive layer 108c Remove the conductive layer 110c'.

[0194] As a result, electrode 136 is formed of a light-transmitting conductive layer 108a, and wiring 126 is light-transmitting A laminated structure comprising a conductive layer 108a having a conductive layer 108a and a conductive layer 110a with lower resistance than the conductive layer 108a. It is formed by a structure. In addition, the electrode 138 is formed of a light-transmitting conductive layer 108b.

[0195] Thus, the conductive layer 108a functions as electrode 136 and the conductive layer 138 functions as electrode 138. By forming the electrolytic layer 108b with a light-transmitting material, the aperture ratio of the pixel portion is improved. It is possible to do so. In addition, the conductive layer that constitutes the electrode 136 functions as the wiring 126. A conductive layer (here, conductive layer 108a) and a metal material with a lower resistivity than the conductive layer 108a. By forming with the conductive layer 110a used, wiring resistance is reduced, and waveform distortion is reduced. It can be reduced. As a result, power consumption can be reduced. Also, wiring 126 By using a light-shielding conductive layer (here, conductive layer 110a), the two can interact. This allows for shading of the area between adjacent pixels.

[0196] Next, an oxide semiconductor film is formed to cover the conductive layers 108a, 108b, the insulating layer 106, etc. Afterward, the oxide semiconductor film is etched to form island-shaped semiconductor layers 112a. (See Figure 10(B)).

[0197] Next, the semiconductor layer 112a, wiring 126, electrode 136, electrode 138, and conductive layer 108c are covered After forming the insulating layer 114 as shown, a conductive layer 116 is formed on the insulating layer 114 (Figure See 10(C). The conductive layer 116 is formed to be electrically connected to the conductive layer 108c. .

[0198] By following the above steps, a semiconductor device can be manufactured. By using a multi-gradation mask... This creates a mask with three exposure levels: an exposed area, an intermediately exposed area, and an unexposed area. This allows for the creation of multiple (typically two) areas of varying thicknesses in a single exposure and development process. A resist mask can be formed. Therefore, by using a multi-level mask, This allows for a reduction in the number of photomasks required.

[0199] In this embodiment, both the process of forming gate wiring and the process of forming source wiring are performed. We have explained the case where a multi-gradation mask is used in the process, but the process of forming gate wiring and A multi-level mask may be used in either the process of forming the source wiring or the other process.

[0200] (Embodiment 3) In this embodiment, a semiconductor device different from that of Embodiment 1 will be described with reference to the drawings. The semiconductor device configuration shown below is common in many ways with Figures 1 and 2 above. Therefore, in the following, overlapping parts will be omitted, and the differences will be explained.

[0201] Other configuration examples of the semiconductor device shown in Embodiment 1 above are shown in Figures 11 and 12. In Figure 12, Figure 11 shows a top view, and Figure 12(A) shows a cross-section between A and B in Figure 11. Accordingly, Figure 12(B) corresponds to the cross-section between CD in Figure 11.

[0202] The semiconductor device shown in Figures 11 and 12 is a semiconductor device that differs from the one shown in Figures 1 and 2 in its gate arrangement. A transparent conductive layer 102a is laminated on a conductive layer 104a to form a wire 120, and wiring 126 shows the case in which a light-transmitting conductive layer 108a is laminated on the conductive film 110. In other words, in the structure shown in Figures 1 and 2, gate wiring 120 and wiring 126 The structure is an inverted version of the laminated conductive layer structure in the original.

[0203] In the configuration shown in Figures 11 and 12, the electrode 132 is electrically connected to the gate wiring 120. The electrode 136 is formed with a light-transmitting conductive layer 102a and electrically connected to the wiring 126. This is formed with a light-transmitting conductive layer 108a.

[0204] In addition to the configurations shown in Figures 11 and 12, the wiring 12 in the structure shown in Figures 1 and 2 Alternatively, the laminated structure of the conductive layer in either 2 or wiring 126 may be reversed. stomach.

[0205] Furthermore, in Figures 11 and 12, a semiconductor layer 112a is provided on electrodes 136 and 138. Although the bottom contact type has been shown, it is not limited to this. For example, semiconductor layer 11 A structure in which electrodes 136 and 138 are provided on 2a (channel etch type) may also be used (Figure (See 47). Note that Figure 47(A) is a top view, and Figure 47(B) is a top view of Figure 47(A). This corresponds to the cross-section between A and B.

[0206] Furthermore, in the structure shown in Figure 47, a channel protective film functions on the semiconductor layer 112a. A structure with an insulating layer 127 (channel protection type) may also be used (see Figure 46(B)).

[0207] Next, Figure 13 shows another example of the configuration of the semiconductor device shown in Embodiment 1 above. In Figure 13(A), a top view is shown, and Figure 13(B) shows the area between A and B in Figure 13(A). It corresponds to the cross-section.

[0208] The semiconductor device shown in Figure 13 has a semiconductor layer 112a in the semiconductor device shown in Figures 1 and 2. The configuration is such that the conductive layer 108a and conductive layer 110a, which will become the wiring 126, are provided. After forming the conductive layer 108a, and before forming the conductive layer 110a, the semiconductor layer 112a is formed. To accomplish.

[0209] As shown in Figure 13, a semiconductor layer 112a is provided between the conductive layer 108a and the conductive layer 110a. This increases the contact area between the electrode 136 and the wiring 126 and the semiconductor layer 112a, Contact resistance can be reduced.

[0210] Next, Figure 14 shows another example of the configuration of the semiconductor device shown in Embodiment 1 above. In Figure 14(A), a top view is shown, and in Figure 14(B), the distance between CD in Figure 14(A) is shown. It corresponds to the cross-section.

[0211] The semiconductor device shown in Figure 14 has a conductive layer in the wiring 124 that serves as the electrode for the holding capacitance portion 154. Below the contact hole 125 formed when connecting 108c and the conductive layer 116 The region in which it is located is provided with a light-shielding conductive layer (in this case, conductive layer 104b). In other words, the configuration shown in Figure 14 is the same as the configuration shown in Figures 1 and 2, but the pixel section 150 In the region where the wiring 124 is provided, a light-transmitting conductive layer 102b and the conductive layer The structure is provided with a laminated structure of conductive layer 104b which has lower resistance than 102b and light-shielding properties. It is.

[0212] Typically, the conductive layer 108c and the conductive layer 116 are electrically connected via the contact hole 125. In this case, a recess is formed on the surface of the conductive layer 116 due to the contact hole 125. As a result, the orientation of the liquid crystal molecules provided on the recess of the conductive layer 116 is disrupted. This can sometimes result in light leakage.

[0213] Therefore, as shown in Figure 14, a light-shielding film is selected below the contact hole 125. By forming it precisely, light leakage due to recesses on the surface of the conductive layer 116 can be reduced. Furthermore, as a light-shielding film, a conductive layer 104b with lower resistance than conductive layer 102b is used. By using this method, the resistance of wiring 124 can be reduced. Furthermore, as shown in Figure 14... Furthermore, the positions for forming the contact holes 125 are concentrated at one end of the wiring 124. By also providing the conductive layer 104b on one end side of the wiring 124, the aperture ratio of the pixel portion 150 is This can improve it.

[0214] Furthermore, the shape of the conductive layer 104b is determined by whether it is positioned below the contact hole 125. The shape is not limited to that shown in Figure 14(A). It reduces light leakage and also reduces the wiring resistance of wiring 124. If you want to reduce resistance, in the direction parallel to the wiring 124 as shown in Figure 14, conductive Layer 104b can be extended and provided. In this case, as described above, contact hole 12 5 is concentrated at one end of the wiring 124, and the conductive layer 104b is also at one end of the wiring 124 By providing it on the side of the pixel section, the aperture ratio of the pixel section 150 can be improved.

[0215] Furthermore, if you want to reduce light leakage and further improve the aperture ratio of the pixel section 150, In a direction parallel to line 124, the conductive layer 104b is not electrically connected, but rather the contact Island-shaped conductive layers 104b can be provided in the regions that overlap with the cthole 125 (Figure 1). See 5(A), (B). Note that in Figure 15, Figure 15(A) shows a top view, and Figure 15 (B) corresponds to the cross-section between CD in Figure 15(A).

[0216] Also, as shown in Figure 15, below the contact hole 125 formed in the wiring 124 A light-shielding film is provided on the side, and in areas other than the wiring 124 (the contact between conductive layer 108b and conductive layer 116) A light-shielding film may be provided below the contact hole formed in the (continuing region).

[0217] Next, Figure 16 shows another example of the configuration of the semiconductor device shown in Embodiment 1 above. In Figure 16(A), a top view is shown, and in Figure 16(B), the section between A and B in Figure 16(A) is shown. It corresponds to the cross-section.

[0218] The semiconductor device shown in Figure 16 has a region with high conductivity (n+ region 11) in a part of the semiconductor layer 112a. 3a, 113b) are provided, and electrodes 136 and 138 and electrode 132 are superimposed. This shows a configuration designed to prevent this. The n+ regions 113a and 113b are semiconductor layer 112 In a, it can be provided in the region connected to electrode 136 and the region connected to electrode 138. It is possible. Furthermore, the n+ regions 113a and 113b may be provided so as to overlap with electrode 132. They may be installed so as not to overlap.

[0219] n+ regions 113a and 113b are formed by selectively adding hydrogen to the semiconductor layer 112a. Hydrogen can be formed in the semiconductor layer 112a in the area where conductivity is to be increased. Just add it.

[0220] For example, a semiconductor layer 112a is formed using an oxide semiconductor containing In, M, or Zn. After that, a resist mask 168 is formed on a portion of the semiconductor layer 112a (see Figure 36(A)). By adding hydrogen ions, n+ regions 113a and 113b are created in the semiconductor layer 112a. It can be formed (see Figure 36(B)).

[0221] Thus, electrodes 136 and 138 and electrode 132 are arranged so as not to overlap. This suppresses the parasitic capacitance that occurs between electrodes 136 and 138 and electrode 132. It is possible.

[0222] In the above configuration, the structure of transistor 152 is such that the source and drain are separated. The example shown illustrates the case where the upper surface shape of the channel-forming region is parallel, but it is not limited to this case. No. In addition, as shown in Figure 17, the top view of the channel-forming region is C-shaped (U-shaped) It may also be used as an radiator. In this case, the conductive layer 108a that functions as the electrode 136 is C-shaped or A conductive layer is formed in a U-shape and surrounds the conductive layer 108b which functions as an electrode 138. 108a can be placed. With this configuration, transistor 15 The channel width can be increased.

[0223] Furthermore, in the above configuration, a semiconductor is placed on the electrode 132 which is electrically connected to the wiring 122. The example shown involves layer 112a, but it is not limited to this. In addition, as shown in Figure 21, A configuration in which a semiconductor layer 112a is provided on the wiring 122 is also possible. In this case, the wiring 122 is It also functions as an electrode. Furthermore, the wiring 122 is provided with a low-resistance conductive layer 104a. This is possible. Of course, the wiring 122 is made of a light-transmitting conductive layer 102a and a conductive layer 104a. It may be provided in a laminated structure. Furthermore, the conductive layer 104a may be a conductive layer with light-shielding properties. This suppresses the irradiation of light onto the semiconductor layer 112a, which forms the channel formation region. This configuration allows for the use of a material whose properties are affected by light as the semiconductor layer that forms the channel. This is effective when using a fee.

[0224] Furthermore, as shown in Figure 37, the wiring 122 may be formed only in the conductive layer 104a. The wiring 126 may be formed only in the conductive layer 110a. Alternatively, the wiring 124 may be formed in the conductive layer 104b It may only be formed in this way.

[0225] Furthermore, as shown in Figure 38, in the wiring 122, a portion of the conductive layer 108a (transistor It may also be configured to selectively provide it in the portion used as electrode 132 of 152. Furthermore, in the wiring 126, a portion of the conductive layer 110a is made (the electrode 136 of the transistor 152) It may also be a configuration in which the part used is selectively provided.

[0226] Note that Figure 38 shows the case where the conductive layer 102a is provided below the conductive layer 104a, The electrical layer 102a may be provided on the conductive layer 104a (see Figure 39). Alternatively, the conductive layer 108a may be provided on the conductive layer 110a (see Figure 39).

[0227] Furthermore, the above-described configuration shows the case where the holding capacity section 154 is provided using the wiring 124. However, this is not limited to this. As shown in Figure 40, without providing the wiring 124, the conductive layer 108c and the adjacent The conductive layer 102a constituting the wiring 122 of the contacting pixels is used as the electrode of the holding capacitance part 154. This configuration is also acceptable.

[0228] In addition, in Figures 13 to 17 and 37 to 40 above, semiconductors are placed on electrodes 136 and 138. The structure described here is a bottom-contact type with layer 112a, but it is not limited to this. As shown in Figures 45 to 47 above, electrodes 136 and 138 are placed on the semiconductor layer 112a. The structure may be provided (channel etch type), or a channel protective film may be placed on the semiconductor layer 112a. A structure (channel protection type) may be provided with an insulating layer 127 that functions as such.

[0229] (Embodiment 4) In this embodiment, a semiconductor device different from those in embodiments 1 and 2 described above will be described with reference to the drawings. I will explain. Specifically, I will explain the case where multiple transistors are provided in a single pixel. The configuration of the semiconductor device shown below is largely the same as that shown in Figures 1 and 2 above. Therefore, in the following, overlapping parts will be omitted, and the differences will be explained.

[0230] Figures 18 and 19 show an example configuration of the semiconductor device shown in this embodiment. Figure 18 shows a top view, and Figure 19(A) corresponds to the cross-section between A and B in Figure 18. Figure 19(B) corresponds to the cross-section between CD in Figure 18.

[0231] The semiconductor device shown in Figures 18 and 19 includes a switching transistor 152 and a drive transistor. A pixel section 150 provided with a transistor 156 and a holding capacitance section 158, wiring 122, and It has wire 126 and wiring 128. The configuration shown in Figures 18 and 19 is, for example, an EL table It can be applied to the pixel portion of a display device.

[0232] The transistor 156 has an electrode 232 provided on the substrate 100 and is provided on the electrode 232 An insulating layer 106, electrodes 236 and 238 provided on the insulating layer 106, and an insulating layer It is provided on electrode 106 so as to overlap with electrode 232 and is provided on electrode 236 and electrode 238 It has a semiconductor layer 112b.

[0233] Furthermore, electrode 232 can function as a gate electrode. Electrode 236 or electrode 2 38 can function as either a source electrode or a drain electrode. Semiconductor layer 112b This can be provided with an oxide semiconductor. Wiring 128 is to function as a power supply line. It is possible to do these things. However, it is not limited to these.

[0234] The electrode 232 is provided with a light-transmitting conductive layer 102c, and the transistor 15 It is electrically connected to electrode 138 (conductive layer 108b). Conductive layer 108b and conductive layer The electrical connection of 102c can be made via the conductive layer 117.

[0235] Furthermore, the conductive layer 117 can be formed in the same process as the conductive layer 116. In other words, insulating After forming layer 114, a contact hole 118a that reaches the conductive layer 108b and conductive layer 1 After forming the contact hole 118b that reaches 02c, a conductive layer 116 is placed on the insulating layer 114. and a conductive layer 117 is formed. Contact holes 118a and 118b are It can be formed in the same process (the same etching process).

[0236] The conductive layer 102c can be formed using the same process as the conductive layer 102a.

[0237] The semiconductor layer 112b can be formed using the same process as the semiconductor layer 112a.

[0238] Electrode 236 is provided with a light-transmitting conductive layer 108d, and is electrically connected to the wiring 128. They are precisely connected. Wiring 128 is configured with a laminated structure of conductive layer 108d and conductive layer 110b. It is also made of conductive layer 108d which constitutes electrode 236 and conductive layer which constitutes wiring 128. The electrochemical layer 108d is formed on the same island.

[0239] In Figures 18 and 19, the wiring 128 is shown as a conductive layer 110b stacked on a conductive layer 108d. Although the example shows layering, the conductive layer 108d may also be laminated on the conductive layer 110b.

[0240] Furthermore, the electrode 238 is provided with a light-transmitting conductive layer 108e, and the conductive layer 116 and They are electrically connected.

[0241] The conductive layer 108d and conductive layer 108e are produced in the same process as conductive layer 108a and conductive layer 108b. It can be formed. Furthermore, the conductive layer 110b is formed in the same process as the conductive layer 110a. It is possible.

[0242] The holding capacitance section 158 has an insulating layer 106 as a dielectric, and a light-transmitting conductive layer 102c and light-transmitting The conductive layer 108d, which has properties, is configured as an electrode. In addition, the conductive layer 102c is a tra It is electrically connected to electrode 138 of converter 152.

[0243] As described above, transistor 152, transistor 156 and retaining capacitance part 158 ​​are light-transmitting By forming with a material having properties, the region in which transistors 152 and 156 are formed Since light can be transmitted in the region where the holding capacity portion 158 is formed, the pixel portion The aperture ratio can be improved by 150. Also, wiring 122, wiring 126, wiring 128 By providing a conductive layer made of a metal material with low resistivity in part of the wiring, the wiring resistance is reduced. This can reduce power consumption.

[0244] Furthermore, the conductive layer 104a that constitutes the gate wiring, the conductive layer 110a that constitutes the source wiring and The conductive layer 110b constituting the wiring 128 is formed using a light-shielding metal material. This reduces wiring resistance and allows light to be shielded between adjacent pixel areas. In addition, gate wiring arranged in the row direction and source wiring and wiring 128 arranged in the column direction This allows the gaps between pixels to be shielded from light without using a black matrix. .

[0245] Note that in Figures 18 and 19, the electrical connection between conductive layer 108b and conductive layer 102c is shown as conductive layer 1 The example shown is via 17, but it is not limited to this. For example, as shown in Figure 20, insulation The conductive layer 102c and conductive layer 108b are connected via a contact hole 119 formed in layer 106. They may be electrically connected. In this case, contact holes 119 are formed in the insulating layer 106. After that, a conductive layer 108b can be formed. In the structure shown in Figure 20, the conductive layer 108b and the conductive layer A conductive layer 116 can also be placed above the connection area of ​​layer 102c.

[0246] Furthermore, although this embodiment shows a case where two transistors are provided in the pixel section 150, This is not the only option. Three or more transistors can also be arranged in parallel or in series. .

[0247] This embodiment describes the case where the transistor structure is of the bottom contact type. However, it is not limited to this. The transistor structure may also be channel-etched, or channel It may also be a protective type.

[0248] (Embodiment 5) In this embodiment, a display device, which is a form of semiconductor device, has a thin film trace on the same substrate. The following describes the case where at least a part of the drive circuit and the pixel section are provided using a transistor. ru.

[0249] Figure 22 shows an example of a block diagram of an active-matrix liquid crystal display, which is an example of a display device. (A) is shown. The display device shown in Figure 22(A) has pixels with display elements on a substrate 5300. A pixel section 5301 having multiple pixels, a scan line driving circuit 5302 that selects each pixel, and the selected It also includes a signal line driving circuit 5303 that controls the input of a video signal to a pixel.

[0250] The light-emitting display device shown in Figure 22(B) has multiple pixels equipped with display elements on a substrate 5400. A pixel section 5401, a first scan line driving circuit 5402 that selects each pixel, and a second scan line The drive circuit 5404 and the signal line drive circuit 5 control the input of the video signal to the selected pixel. It has 403.

[0251] In the case of converting the video signal input to the pixels of the light-emitting display device shown in Figure 22(B) into a digital format In total, pixels are either emitting or not emitting light by switching transistors on and off. Therefore, gradation can be displayed using area gradation or time gradation. The integrating method divides one pixel into multiple sub-pixels and drives each sub-pixel independently based on the video signal. This is a driving method that performs grayscale display by moving the pixels. Time-based grayscale display is also a method where pixels emit light... This is a driving method that performs grayscale display by controlling the duration of the operation.

[0252] Because light-emitting elements have a higher response speed compared to liquid crystal elements, they are more suitable for time-gradation methods than liquid crystal elements. When displaying using time gradation, one frame period is divided into multiple subframe periods. The video signal is divided, and the light-emitting elements of the pixels are illuminated during each subframe period. Alternatively, set it to a non-emitting state. By dividing it into multiple subframe periods, one frame The total length of the period during which pixels emit light during the video period can be controlled by the video signal. It can display grayscale levels.

[0253] In the light-emitting display device shown in Figure 22(B), each pixel has two switching TFTs. In the case where the first scan line is the gate wiring of one of the switching TFTs The signal input to the first scan line drive circuit 5402 generates the signal, and the other switching TFT The signal input to the second scan line, which is the gate wiring, is generated by the second scan line drive circuit 5404. An example is shown, where the signal input to the first scan line and the signal input to the second scan line The signal and the scan line may both be generated by a single scan line drive circuit. Alternatively, for example, one The operation of the switching element is controlled by the number of switching TFTs that each pixel possesses. Multiple scan lines may be provided for each pixel. In this case, multiple The signals input to the scan lines can all be generated by a single scan line drive circuit, or multiple individual drive circuits can be used. It can also be generated using a line drive circuit.

[0254] The thin-film transistors placed in the pixel portion of the liquid crystal display device are formed according to Embodiments 1 to 4. It is possible. Furthermore, the thin-film transistors shown in Embodiments 1 to 4 are n-channel type TFTs. Therefore, among the drive circuits, one of the drive circuits that can be constructed with an n-channel TFT is The pixel portion is formed on the same substrate as the thin-film transistor of the pixel portion.

[0255] Furthermore, in light-emitting display devices, the drive circuit is composed of n-channel TFTs. A portion of the drive circuit can be formed on the same substrate as the thin-film transistors in the pixel section. Furthermore, the signal line drive circuit and the scan line drive circuit are n-channel type TFs as shown in Embodiments 1 to 4. It is also possible to create it using only T.

[0256] Furthermore, in the peripheral drive circuits such as protection circuits, gate drivers, and source drivers, In a zista, there is no need to transmit light. Therefore, the pixel portion is made up of transistors and capacitive elements. In the child, light is transmitted, and in the peripheral drive circuit section, light is transmitted through the transistor. It's not necessary.

[0257] Figure 23(A) shows the drive unit and when a thin-film transistor is formed without using a multi-gradation mask. The thin-film transistors in the pixel region are shown, and Figure 23(B) shows the case when formed using a multi-gradation mask. This shows the thin-film transistors in the drive unit and pixel unit.

[0258] When forming thin-film transistors without using a multi-gradation mask, the transistors in the drive unit... Furthermore, the gate electrode is provided with a conductive layer 104a that has higher conductivity than conductive layer 102a, and the source The electrodes and drain electrodes are provided with a conductive layer 110a that has a higher conductivity than the conductive layer 108a. This is possible. In addition, in the drive unit, the gate wiring is provided with a conductive layer 104a, and the source wiring The wire can be provided in the conductive layer 110a.

[0259] When forming thin-film transistors using a multi-gradation mask, the transistors in the drive unit... The gate electrode is provided with a laminated structure of conductive layer 102a and conductive layer 104a, and the source electrode and The conductive layer 108a and conductive layer 110a are arranged in a laminated structure, and the conductive layer 10 is used as the drain electrode. It can be provided as a laminated structure of 8b and conductive layer 110a.

[0260] In Figure 23, the transistors in the pixel section are configured as shown in the above embodiment. It is possible.

[0261] Furthermore, the above-mentioned drive circuit is not limited to liquid crystal displays or light-emitting displays, but also includes switching elements and It may also be used in electronic paper, which drives electronic ink using electrically connected elements. Electronic paper is also called an electrophoretic display device (electrophoretic display), and is similar to paper. To achieve readability, reduce power consumption compared to other display devices, and make it thin and lightweight. This is possible.

[0262] This embodiment can be implemented in appropriate combination with the configurations described in other embodiments. That is the case.

[0263] (Embodiment 6) In this embodiment, thin-film transistors are used in the pixel section and further in the driving circuit to provide a display function. This section explains the process of manufacturing semiconductor devices (also called display devices). It also describes the process of manufacturing thin-film transistors. The inverter, with part or all of the drive circuit, is integrally formed on the same substrate as the pixel section, and the system On-panel formation is possible.

[0264] A display device includes display elements. Display elements include liquid crystal elements (also called liquid crystal display elements) and light-emitting elements. A light-emitting element (also called a light-emitting display element) can be used. The light-emitting element is activated by current or voltage. This category includes elements whose brightness is controlled, specifically inorganic EL (Electrical LEDs). This includes Luminescence elements, organic EL elements, etc. Also, electronic inks. Furthermore, display media in which the contrast changes due to electrical effects can also be applied.

[0265] Furthermore, the display device includes a panel in which the display elements are sealed, and a controller on the panel. The display device includes a module on which ICs and the like are mounted. With respect to an element substrate that corresponds to one form before the display element is completed in the process of manufacturing the element, The element substrate is provided with means for supplying current to the display element at each of the multiple pixels. Specifically, the display element may be in a state where only the pixel electrodes are formed, or the pixel electrodes and This is the state after a conductive film has been formed, but before etching to form pixel electrodes. That's fine, and it applies to all forms.

[0266] In this specification, the term "display device" refers to an image display device, a display device, or an optical display device. This refers to the power source (including lighting equipment). It also refers to connectors, such as FPC (Flexible Printed Circuit). (inted circuit) or TAB (Tape Automated Bon (ding) tape or TCP (Tape Carrier Package) Modules that have a printed circuit board attached to the end of the TAB tape or TCP. The display element or IC (integrated circuit board) is integrated using the COG (Chip On Glass) method. All modules in which the road is directly implemented are also included in the display device.

[0267] In this embodiment, an example of a liquid crystal display device is shown as a semiconductor device. First, a type of semiconductor device The external appearance and cross-section of the liquid crystal display panel corresponding to the state will be explained using Figure 24. Figure 24 This involves using an In-Ga-Zn-O non-single-crystal film formed on the first substrate 4001 as a semiconductor layer. The highly reliable thin-film transistors 4010, 4011, and liquid crystal element 4013 are included. This is a top view of the panel, which is sealed between the second substrate 4006 and the panel by a sealing material 4005. Figure 24(B) corresponds to the cross-sectional view at MN in Figures 24(A1) and (A2).

[0268] The pixel section 4002 and the scanning line driving circuit 4004 are surrounded on the first substrate 4001. A sealing material 4005 is provided in this manner. Also, the pixel section 4002 and the scan line drive rotation A second substrate 4006 is provided on the path 4004. Therefore, the pixel section 4002 and the scanning The line drive circuit 4004 consists of the first substrate 4001, the sealing material 4005, and the second substrate 4006. It is sealed together with the liquid crystal layer 4008. Also, the seal on the first substrate 4001 A single crystal is placed on a separately prepared substrate in a region different from the area enclosed by material 4005. A signal line driving circuit 4003, formed from a semiconductor film or a polycrystalline semiconductor film, is mounted.

[0269] Furthermore, the method of connecting the separately formed drive circuit is not particularly limited, and COG method, Wire bonding methods or TAB methods can be used. Figure 24(A1) This is an example of implementing the signal line drive circuit 4003 using the COG method, and Figure 24(A2) shows, This is an example of implementing the signal line drive circuit 4003 using the TAB method.

[0270] Furthermore, the pixel section 4002 provided on the first substrate 4001 and the scanning line driving circuit 4004 are It has multiple thin-film transistors, and in Figure 24(B), the thin film transistor included in the pixel section 4002 Thin film transistor 4010 and thin film transistor 401 included in scan line driving circuit 4004 1 is an example. On thin-film transistors 4010 and 4011 are insulating layers 4020 and 40 21 is provided.

[0271] Thin-film transistors 4010 and 4011 use an In-Ga-Zn-O non-single-crystal film as the semiconductor layer. A highly reliable thin-film transistor can be applied as such. Thin-film transistors 4010 and 4011 are n-channel thin-film transistors.

[0272] Furthermore, the pixel electrode layer 4030 of the liquid crystal element 4013 is connected to the thin-film transistor 4010. They are electrically connected. And the counter electrode layer 4031 of the liquid crystal element 4013 is on the second substrate 40 Formed on 06. Pixel electrode layer 4030, counter electrode layer 4031, and liquid crystal layer 4008 The overlapping portion corresponds to the liquid crystal element 4013. Note that the pixel electrode layer 4030 and the opposite The electrode layer 4031 is provided with insulating layers 4032 and 4033, which function as alignment films. The liquid crystal layer 4008 is sandwiched between insulating layers 4032 and 4033.

[0273] The first substrate 4001 and the second substrate 4006 are made of glass, metal (typically, glass). Stainless steel, ceramics, and plastics can be used. , FRP (Fiberglass-Reinforced Plastics) board, PV F (polyvinyl fluoride) film, polyester film, polyester film Alternatively, acrylic resin film can be used. Also, aluminum foil can be used with PVF. It is also possible to use sheets with a structure that is sandwiched between films or polyester films.

[0274] Furthermore, 4035 is a columnar spacer obtained by selectively etching an insulating film. The distance (cell gap) between the pixel electrode layer 4030 and the counter electrode layer 4031 is controlled. It is provided for this purpose. A spherical spacer may also be used. Also, the counter electrode layer 403 1 is electrically connected to a common potential line provided on the same substrate as the thin-film transistor 4010. It is possible to use a common connection part to connect the conductive particles placed between the pair of substrates to the counter electrode layer 4 031 and the common potential line can be electrically connected. Note that the conductive particles are sealing material 4 It is to be included in 005.

[0275] Alternatively, a liquid crystal exhibiting a blue phase without an alignment layer may be used. The blue phase is one of the liquid crystal phases. Yes, as the temperature of a cholesteric liquid crystal is increased, it transitions from the cholesteric phase to the isotropic phase. This is the phase that appears earlier. The blue phase only appears within a narrow temperature range, so improving the temperature range is necessary. To achieve this, a liquid crystal composition containing 5% or more by weight of a chiral agent is used in the liquid crystal layer 4008. It is used. A liquid crystal composition containing a liquid crystal exhibiting a blue phase and a chiral agent has a response speed of 10 μs~ With a short duration of 100 μs and optical isotropy, orientation processing is unnecessary, and it exhibits low field-of-view angle dependence. stomach.

[0276] The liquid crystal display device shown in this embodiment is an example of a transmissive liquid crystal display device, but the liquid crystal display device This method can be applied to both reflective and transflective liquid crystal displays.

[0277] Furthermore, in the liquid crystal display device shown in this embodiment, a polarizing plate is provided on the outside (viewing side) of the substrate, and the inside An example is shown where the coloring layer and the electrode layer used for the display element are arranged in that order, but the polarizing plate is on the inside of the substrate. It may also be provided in this embodiment. Furthermore, the laminated structure of the polarizing plate and the colored layer is not limited to this embodiment, and the polarizing plate The coloring layer can be set appropriately depending on the materials and manufacturing process conditions. A light-shielding film that functions as a shield may be provided.

[0278] Furthermore, in this embodiment, in order to reduce surface irregularities of the thin-film transistor, and thin-film transistor To improve the reliability of the transistor, thin-film transistors function as protective films or planarization insulating films. The structure is covered with insulating layers (insulating layer 4020, insulating layer 4021). This is to prevent the entry of pollutants such as organic matter, metals, and water vapor suspended in the atmosphere. Therefore, a dense film is preferred. The protective film is made by sputtering a silicon oxide film, nitride film Silicon oxide film, silicon nitride film, silicon nitride film, aluminum oxide film, aluminum nitride film Aluminum film, aluminum oxide nitride film, or aluminum nitride oxide film, in single or multilayer form This should be done. In this embodiment, an example of forming a protective film by sputtering is shown, but it is not particularly limited. It can be formed using various methods.

[0279] Here, a laminated insulating layer 4020 is formed as a protective film. As the first layer of 0, a silicon oxide film is formed using the sputtering method. When using a recon film, the aluminum film used as the source electrode layer and drain electrode layer is It is effective in preventing lockout.

[0280] Furthermore, an insulating layer is formed as the second layer of the protective film. Here, the second layer of the insulating layer 4020 is Then, a silicon nitride film is formed using the sputtering method. The silicon nitride film is used as a protective film. This allows mobile ions such as sodium to penetrate the semiconductor region, altering the electrical properties of the TFT. It can suppress the process of causing the problem.

[0281] Alternatively, after forming the protective film, the semiconductor layer may be annealed (300°C to 400°C). stomach.

[0282] Furthermore, an insulating layer 4021 is formed as a planar insulating film. The insulating layer 4021 is made of poly Heat-resistant organic materials such as mids, acrylics, benzocyclobutenes, polyamides, and epoxys. Materials can be used. In addition to the above organic materials, low dielectric constant materials (low-k materials) can also be used. Using siloxane-based resins, PSG (phosphorus glass), BPSG (phosphorus boron glass), etc. This can be achieved by stacking multiple insulating films made of these materials. 4021 may be formed.

[0283] Siloxane-based resins are formed using siloxane-based materials as the starting material for Si-OS. This corresponds to a resin containing i-bonds. Siloxane resins use organic groups (e.g., alkyl groups) as substituents. You may also use aryl groups or fluoro groups. Furthermore, organic groups may have fluoro groups. You can.

[0284] The method for forming the insulating layer 4021 is not particularly limited and can be sputtered or SOG depending on the material. Spin coating, dip coating, spray coating, droplet ejection (inkjet method, screen coating) Printing, offset printing, etc.), doctor knife, roll coater, curtain coater, knife A coater or the like can be used. When forming the insulating layer 4021 using a material liquid, The semiconductor layer may be annealed (300°C to 400°C) simultaneously with the machining process. By combining the firing process of the edge layer 4021 with the annealing of the semiconductor layer, semiconductor devices can be manufactured efficiently. It becomes possible to do so.

[0285] The pixel electrode layer 4030 and the counter electrode layer 4031 are made of indium oxide containing tungsten oxide. , indium zinc oxide containing tungsten oxide, indium oxide containing titanium oxide, Titanium oxide-containing indium tin oxide, indium tin oxide (hereinafter referred to as ITO), Translucent materials such as indium zinc oxide and indium tin oxide with added silicon dioxide. Conductive materials can be used.

[0286] Furthermore, conductive polymers are used as the pixel electrode layer 4030 and the counter electrode layer 4031. It can be formed using a conductive composition containing (also known as). The resulting pixel electrode preferably has a light transmittance of 70% or more at a wavelength of 550 nm. Furthermore, the resistivity of the conductive polymer contained in the conductive composition must be 0.1 Ω·cm or less. preferable.

[0287] As the conductive polymer, so-called π-electron conjugated conductive polymers can be used. For example For example, polyaniline or its derivatives, polypyrrole or its derivatives, polythiophene Examples include derivatives thereof, or copolymers of two or more of these.

[0288] In addition, a separately formed signal line drive circuit 4003 and a scan line drive circuit 4004 or pixel unit 4 The various signals and potentials supplied to 002 are provided by the FPC4018.

[0289] In this embodiment, the connection terminal electrode 4015 is connected to the pixel electrode layer 40 of the liquid crystal element 4013. Formed from the same conductive film as 30, the terminal electrode 4016 is made of thin-film transistor 4010, 40 The source electrode layer and drain electrode layer are formed of the same conductive film.

[0290] The connecting terminal electrode 4015 is connected to the terminal of the FPC 4018 via the anisotropic conductive film 4019. They are electrically connected.

[0291] Furthermore, in Figure 24, a signal line drive circuit 4003 is formed separately and implemented on the first substrate 4001. Although an example of the configuration is shown, this embodiment is not limited to this configuration. Scan line drive circuit Alternatively, it may be formed and implemented separately, or it may be part of the signal line drive circuit or part of the scan line drive circuit. It is also acceptable to form and implement the component separately.

[0292] Figure 25 shows a liquid crystal display module, which is a form of semiconductor device, using a TFT substrate 2600. This shows one example of how it can be constructed.

[0293] Figure 25 shows an example of a liquid crystal display module, in which the TFT substrate 2600 and the opposing substrate 2601 are The element layer 2603 containing a TFT, etc., and the liquid crystal layer are fixed by a material 2602, with the element layer containing a TFT, etc., between them. A display element 2604 and a colored layer 2605 are provided to form a display area. Colored layer 2605 This is necessary for color display, and in the case of the RGB method, it corresponds to red, green, and blue. A colored layer is provided corresponding to each pixel. The TFT substrate 2600 and the opposing substrate 2601 Polarizing plates 2606, 2607, and 2613 are arranged on the outside. The light source is cold It consists of a cathode tube 2610 and a reflector 2611, and the circuit board 2612 is flexible The wiring circuit section 2608 of the TFT board 2600 is connected by the wire board 2609, and the control External circuits such as polarizing circuits and power supply circuits are incorporated. Also, between the polarizing plate and the liquid crystal layer The layers may be stacked with a phase difference plate in place.

[0294] The LCD display module has TN (Twisted Nematic) mode and IPS (I n-Plane-Switching) mode, FFS (Fringe Field Switching) (witching) mode, MVA (Multi-domain Vertical A) alignment) mode, PVA(Patterned Vertical Alignment) mode nment), ASM(Axially Symmetric aligned Mic ro-cell) mode, OCB(Optical Compensated Bire) fringence) mode, FLC (Ferroelectric Liquid C (rystal) mode, AFLC (AntiFerroelectric Liquid) Crystals and other materials can be used.

[0295] Through the above process, a highly reliable liquid crystal display device can be manufactured as a semiconductor device. .

[0296] This embodiment can be implemented in appropriate combination with the configurations described in other embodiments. That is the case.

[0297] (Embodiment 7) In this embodiment, electronic paper is shown as an example of a semiconductor device.

[0298] Figure 26 shows an example of a semiconductor device: an active-matrix electronic paper. The thin-film transistor 581 used in the device is the thin film shown in Embodiments 1 to 3 above. It can be fabricated in the same way as a transistor.

[0299] The electronic paper in Figure 26 is an example of a display device using a twist ball display method. The Toball display method is an electrode layer that uses spherical particles painted in white and black as display elements. It is placed between the first electrode layer and the second electrode layer, and a potential difference is applied between the first electrode layer and the second electrode layer. This method controls and displays the orientation of spherical particles by generating a specific phenomenon.

[0300] The thin-film transistor 581 provided on the substrate 580 is a thin-film transistor with a bottom gate structure. The source electrode layer or drain electrode layer is the first electrode layer 587 and the insulating layer 583, 5 The first electrode is electrically connected via contact holes formed at 84 and 585. Between layer 587 and the second electrode layer 588, there are black region 590a and white region 590b. And a spherical particle 589 is provided, which includes a cavity 594 filled with liquid around it. Furthermore, a filler material 595 such as resin is provided around the spherical particles 589 (see Figure 26). In 26, the first electrode layer 587 corresponds to the pixel electrode, and the second electrode layer 588 corresponds to the common electrode. This corresponds to a pole. The second electrode layer 588 is provided on the same substrate as the thin-film transistor 581. It is electrically connected to a common potential line. Using the common connection part shown in the above embodiment, a pair The conductive particles placed between the substrates allow the second electrode layer 588 provided on the substrate 596 to communicate with the substrate 596. It can be electrically connected to a common potential line.

[0301] Alternatively, an electrophoretic element can be used instead of a twist ball. In that case, A transparent liquid containing positively charged white particles and negatively charged black particles, with a diameter of 10 Microcapsules of approximately μm to 200 μm are used between the first electrode layer and the second electrode layer. The microcapsules provided are subjected to an electric field by a first electrode layer and a second electrode layer. When this happens, the white and black particles move in opposite directions, allowing for the display of either white or black. This principle is applied to display elements called electrophoretic display elements, and generally refers to electronic paper. It is called that. Electrophoretic display elements have a higher reflectivity than liquid crystal display elements, so auxiliary lights It does not require a power supply, consumes little power, and allows the display to be seen even in dimly lit places. Yes. Furthermore, even if power is not supplied to the display unit, it can retain the image that has been displayed. Because this is possible, a semiconductor device with a display function (simply a display device, or a display) can be transmitted from the radio wave source. Even when the semiconductor device (also called a device equipped with the equipment) is moved away, the displayed image is saved. It becomes possible to do so.

[0302] As described above, highly reliable electronic paper can be manufactured as a semiconductor device.

[0303] This embodiment can be implemented in appropriate combination with the configurations described in other embodiments. That is the case.

[0304] (Embodiment 8) In this embodiment, an example of a light-emitting display device is shown as a semiconductor device. The display elements of the display device As an example, we will demonstrate using a light-emitting element that utilizes electroluminescence. Light-emitting devices that utilize luminescence use either organic or inorganic compounds as the light-emitting material. They are distinguished by whether they are physical objects; generally, the former are called organic EL elements, and the latter are called inorganic EL elements. They've found out.

[0305] Organic EL elements emit electrons and holes from a pair of electrodes when a voltage is applied to the light-emitting element. Each of these is injected into a layer containing a luminescent organic compound, and an electric current flows through it. Then, these... The recombination of electrons and holes causes the luminescent organic compound to form an excited state. And when that excited state returns to the ground state, it emits light. From this mechanism, Such light-emitting devices are called current-excited light-emitting devices.

[0306] Inorganic electroluminescent (EL) elements are classified into dispersed inorganic EL elements and thin-film inorganic EL elements based on their element configuration. They are classified as such. Dispersive inorganic EL elements have a light-emitting layer in which particles of light-emitting material are dispersed in a binder. The luminescence mechanism utilizes donor and acceptor levels, and the donor-acceptor level is the key to this process. This is a receptor recombination type light emission. Thin-film inorganic EL elements sandwich the light-emitting layer between dielectric layers. Furthermore, it has a structure where it is sandwiched between electrodes, and the light emission mechanism utilizes the inner-shell electron transition of metal ions. This is a localized light emission. Here, we will explain using an organic EL element as the light-emitting element. ru.

[0307] Figure 27 shows an example of a pixel configuration to which digital time-gradation driving can be applied as an example of a semiconductor device. This is the diagram shown.

[0308] This section describes the pixel configuration and operation to which digital time-based gradation driving can be applied. This method uses an oxide semiconductor layer (In-Ga-Zn-O non-single crystal film) as the channel formation region. This example shows the use of two channel-type transistors in a single pixel.

[0309] The pixel 6400 shown in Figure 27(A) is a switching transistor 6401, a driving transistor It has an inverter 6402, a light-emitting element 6404, and a capacitive element 6403. Transistor 6401 has its gate connected to scan line 6406, and the first electrode (source electrode and One of the two electrodes (source electrode and drain electrode) is connected to signal line 6405, and the second electrode (source electrode and drain electrode) is connected to signal line 6405. The other electrode is connected to the gate of the drive transistor 6402. The gate of the zista 6402 is connected to the power line 6407 via the capacitive element 6403, and the first The electrode is connected to the power line 6407, and the second electrode is the first electrode (pixel electrode) of the light-emitting element 6404. It is connected to the second electrode of the light-emitting element 6404, which corresponds to the common electrode 6408.

[0310] Furthermore, a low power supply potential is set for the second electrode (common electrode 6408) of the light-emitting element 6404. The low power supply potential is defined as the low power supply potential set on power line 6407 relative to the high power supply potential. The potential is the potential that satisfies the high power supply potential, and low power supply potentials include, for example, GND and 0V. It may be fixed. The potential difference between this high power supply potential and the low power supply potential is applied to the light-emitting element 6404. Then, in order to pass current through the light-emitting element 6404 and make the light-emitting element 6404 emit light, a high power supply potential is used. The potential difference between the low power supply potential and the light-emitting element 6404 is set to be greater than or equal to the forward threshold voltage of the light-emitting element 6404. Set the potential for each.

[0311] However, this is not limited to the above; a high power supply potential may be set on the second electrode, and a low power supply potential may be set on the power supply line 6407. You may set it to that.

[0312] Note that the capacitive element 6403 is omitted by substituting the gate capacitance of the drive transistor 6402. This is also possible. Regarding the gate capacitance of the drive transistor 6402, the channel region A capacitance may be formed between the gate electrode and the gate electrode.

[0313] In the case of a voltage input / voltage drive method, the gate of the drive transistor 6402 is: The drive transistor 6402 is either fully on or completely off. The video signal is input. In other words, the driver transistor 6402 is operated in the linear region. The driver transistor 6402 operates in the linear region, therefore the voltage of the power line 6407 is higher than A high voltage is applied to the gate of the drive transistor 6402. The signal line 6405 is connected to... Apply a voltage equal to or greater than (power line voltage + Vth of the drive transistor 6402).

[0314] Furthermore, when using analog gradation drive instead of digital time gradation drive, the signal input is different. By doing so, the same pixel configuration as in Figure 27 can be used.

[0315] When performing analog grayscale driving, the gate of the driving transistor 6402 is connected to the light-emitting element 6404 Apply a voltage equal to or greater than the forward voltage of the drive transistor 6402 + Vth. (Light-emitting element 64) The forward voltage of 04 refers to the voltage required to achieve the desired brightness, and at least the forward voltage is Includes key voltage. Note that the drive transistor 6402 operates in the saturation region. By inputting an O signal, current can be supplied to the light-emitting element 6404. The drive transistor... To operate the 6402 in the saturation region, the potential of the power line 6407 is set to the drive transistor The gate potential of the TA6402 is set higher. By making the video signal analog, the light-emitting element... By supplying current to the 6404 according to the video signal, analog grayscale driving can be performed.

[0316] The pixel configuration shown in this embodiment is not limited to this. You may add switches, resistors, capacitives, transistors, or logic circuits. For example, the configuration shown in Figure 27(B) may be used. The pixel 6420 shown in Figure 27(B) is Switching transistor 6401, driving transistor 6402, light-emitting element 6404 It also has a capacitive element 6423. The switching transistor 6401 has a gate that runs It is connected to signal line 6406, and the first electrode (either the source electrode or the drain electrode) is connected to signal line 64 It is connected to 05, and the second electrode (the other of the source electrode and drain electrode) is the drive transistor. It is connected to the gate of 6402. The drive transistor 6402 has a capacitive gate element. It is connected to the first electrode (pixel electrode) of the light-emitting element 6404 via 6423, and the first electrode is The wiring 6426 to which the voltage is applied is connected, and the second electrode is connected to the first electrode of the light-emitting element 6404. They are connected. The second electrode of the light-emitting element 6404 corresponds to the common electrode 6408. Of course. In addition to this configuration, switches, resistors, capacitives, transistors, or logic circuits are added. You may add things like this.

[0317] Next, the configuration of the light-emitting element will be explained using Figure 28. Here, the driving TFT is n Let's take the case of a type as an example to explain the cross-sectional structure of a pixel. Figure 28(A)(B)(C) The TFT7001, 7011, and 7021, which are driver TFTs used in semiconductor devices, are above It can be fabricated in the same manner as the thin-film transistor shown in the embodiment described above, and is an In-Ga-Zn-O non-single-ended transistor. This is a highly reliable thin-film transistor that includes a crystal film as a semiconductor layer.

[0318] In order to extract light from a light-emitting element, it is sufficient that at least one of the anode or cathode is transparent. Then, a thin-film transistor and a light-emitting element are formed on the substrate, and light is emitted from the side opposite to the substrate. This includes top-side emission, bottom-side emission which extracts light from the substrate side, and on the substrate side and the opposite side of the substrate. There is a light-emitting element with a double-sided emission structure that extracts light from the side surface, and the pixel configuration is which emission structure It can also be applied to optical elements.

[0319] The light-emitting element with an upper surface injection structure will be explained using Figure 28(A).

[0320] Figure 28(A) shows that the driving TFT, TFT7001, is of n type, and the light-emitting element 7002 emits This shows a cross-sectional view of a pixel when the light being emitted passes through to the anode 7005 side. In Figure 28(A), The cathode 7003 of the light-emitting element 7002 and the driving TFT, TFT7001, are electrically connected. The cathode 7003 has a light-emitting layer 7004 and an anode 7005 stacked on top of it in that order. 7003 uses a variety of materials as long as the work function is small and the conductive film reflects light. This is possible. For example, Ca, Al, CaF, MgAg, AlLi, etc. are desirable. Even if the light-emitting layer 7004 consists of a single layer, it is configured so that multiple layers are stacked. Either way is fine. If it consists of multiple layers, the electron injection layer is on the cathode 7003. The electron transport layer, light-emitting layer, hole transport layer, and hole injection layer are stacked in that order. It is not necessary to provide all of them. The anode 7005 uses a conductive material that is translucent and transmits light. Forms, for example, indium oxide containing tungsten oxide, indium oxide containing tungsten oxide Indium oxide containing zinc oxide, titanium oxide containing indium tin oxide, and titanium oxide containing indium tin oxide. Oxides, indium tin oxide (hereinafter referred to as ITO), indium zinc oxide, oxide A transparent conductive film, such as indium tin oxide with added ilium, may also be used.

[0321] The region between the cathode 7003 and the anode 7005, which sandwiches the light-emitting layer 7004, is the light-emitting element 7002. It corresponds to the pixel shown in Figure 28(A), where the light emitted from the light-emitting element 7002 is the arrow. As indicated by the mark, inject towards the anode 7005 side.

[0322] Furthermore, in the above configuration, by adjusting the film thickness of the light-emitting layer 7004, a microcavity can be created. It may also be a microcavity structure. By adopting a microcavity structure, the color purity can be improved. This is possible. In addition, multiple light-emitting layers 7004 each emit different colors (for example, RGB). In this case, the film thickness of the light-emitting layer 7004 is adjusted for each color to create a microcavity structure. This is preferable.

[0323] Furthermore, in the above configuration, an insulating film such as silicon oxide or silicon nitride is provided on the anode 7005. This may be done. This can suppress the deterioration of the light-emitting layer.

[0324] Next, the light-emitting element of the bottom-extrusion structure will be explained using Figure 28(B). Driving TFT7 When 011 is n-type and the light emitted from the light-emitting element 7012 is directed toward the cathode 7013 side, Figure 28(B) shows a cross-sectional view of the pixel. In Figure 28(B), the driving TFT7011 is electrically connected to the pixel. The cathode 7013 of the light-emitting element 7012 is deposited on a light-transmitting conductive film 7017. The light-emitting layer 7014 and the anode 7015 are stacked in order on the cathode 7013. If 015 is translucent, a shielding material to reflect or block light should be used to cover the anode. A film 7016 may be formed. The cathode 7013 is as in the case of Figure 28(A). Various materials can be used if the conductivity function is small. However, the film thickness is The film should be transparent enough to transmit light (preferably around 5 nm to 30 nm). For example, a 20 nm film. A thick aluminum film can be used as the cathode 7013. And the light-emitting layer 7 014, as in Figure 28(A), consists of a single layer, but multiple layers are stacked on top of each other. Either configuration is acceptable. The anode 7015 does not need to transmit light, but as shown in the diagram... Similar to 28(A), it can be formed using a light-transmitting conductive material. The shielding film 7016 can be made of, for example, a light-reflecting metal, but is not limited to a metal film. It's not possible. For example, a resin with black pigment added can be used.

[0325] The region between the cathode 7013 and anode 7015, sandwiching the light-emitting layer 7014, is the light-emitting element 7012. This corresponds to the pixel shown in Figure 28(B), where the light emitted from the light-emitting element 7012 is As indicated by the arrow, the material is injected towards the cathode 7013.

[0326] Next, a light-emitting element with a double-sided injection structure will be explained using Figure 28(C). Figure 28(C) Then, on the light-transmitting conductive film 7027 electrically connected to the driving TFT 7021, The cathode 7023 of the light-emitting element 7022 is formed by depositing a film, and the light-emitting layer 7024 is on the cathode 7023. The anodes 7025 are stacked in order. The cathode 7023 is the same as in Figure 28(A). Various materials can be used if the conductivity function is small. However, the film thickness is ...to the extent that it transmits light. For example, Al with a film thickness of 20 nm is used as cathode 7023. It can be used. The light-emitting layer 7024 is composed of a single layer, as in Figure 28(A). It is acceptable whether it is configured as a single layer or as multiple layers stacked on top of each other. Anode 70 25 is formed using a conductive material that is translucent and transmits light, similar to Figure 28(A). It is possible.

[0327] The portion where the cathode 7023, the light-emitting layer 7024, and the anode 7025 overlap is the light-emitting element 70 This corresponds to 22. In the case of the pixel shown in Figure 28(C), the light emitted from the light-emitting element 7022 As indicated by the arrows, the material is injected into both the anode 7025 side and the cathode 7023 side.

[0328] Here, we have discussed organic EL elements as light-emitting elements, but inorganic EL elements can also be used as light-emitting elements. It is also possible to incorporate an L element.

[0329] In this embodiment, a thin-film transistor (driving TFT) controls the driving of the light-emitting element, An example of electrically connected light-emitting elements was shown, but current is currently flowing between the driving TFT and the light-emitting element. A configuration in which a control TFT is connected is also acceptable.

[0330] The semiconductor device shown in this embodiment is not limited to the configuration shown in Figure 28. Various transformations are possible.

[0331] Next, the appearance of a light-emitting display panel (also called a light-emitting panel), which corresponds to a form of semiconductor device, and The cross-section will be explained using Figure 29. Figure 29(A) shows the formation on the first substrate 4051. A highly reliable thin-film transistor containing a processed In-Ga-Zn-O non-single-crystal film as a semiconductor layer. The zistas 4509, 4510 and the light-emitting element 4511 are sealed between them and the second substrate 4506. This is a top view of the panel sealed with material 4505, and Figure 29(B) is a top view of Figure 29(A). This corresponds to a cross-sectional view in HI.

[0332] Pixel section 4502, signal line driving circuit 4503a, 450 provided on the first substrate 4501 3b, and the scan line drive circuits 4504a and 4504b are surrounded by a sealing material 4505 A pixel unit 4502, signal line driving circuits 4503a, 4503b, and A second substrate 4506 is provided on top of the scan line driving circuits 4504a and 4504b. The pixel section 4502, signal line driving circuits 4503a, 4503b, and scan line driving circuit 45 04a and 4504b consist of a first substrate 4501, a sealing material 4505, and a second substrate 4506. It is sealed together with the filler 4507. Highly dense protective film with minimal degassing (laminated film, UV-curing resin film) It is preferable to package (seal) the product with a cover material such as a linoleum.

[0333] Also provided on the first substrate 4501 are the pixel section 4502, the signal line driving circuit 4503a, 4 503b, and the scan line driving circuits 4504a and 4504b have multiple thin-film transistors. In Figure 29(B), the thin-film transistor 4510 included in the pixel section 4502 and the signal The thin-film transistor 4509 included in the wire drive circuit 4503a is shown as an example.

[0334] Thin-film transistors 4509 and 4510 can be configured as shown in the above embodiment. Here, thin-film transistors 4509 and 4510 are In-Ga-Zn-O non-single-ended transistors. This allows for the application of highly reliable thin-film transistors that include a crystal film as a semiconductor layer. In the configuration, thin-film transistors 4509 and 4510 are n-channel thin-film transistors. It is Ta.

[0335] Furthermore, 4511 corresponds to a light-emitting element, and the first electrode is a pixel electrode of the light-emitting element 4511. Layer 4517 is electrically connected to the source electrode layer or drain electrode layer of the thin-film transistor 4510. It is connected to the following. The configuration of the light-emitting element 4511 is a first electrode layer 4517 and an electroluminescent layer The stacked structure consists of 4512 and a second electrode layer 4513, but is not limited to the configuration shown in this embodiment. It is not done. The direction of the light emitted from the light-emitting element 4511 is adjusted according to the direction of the light emitted from the light-emitting element 4511. The configuration can be changed as needed.

[0336] The partition wall 4520 is formed using an organic resin film, an inorganic insulating film, or an organic polysiloxane. In particular, using a photosensitive material, an opening is formed on the first electrode layer 4517, and the side wall of the opening It is preferable to form it so that it becomes an inclined surface with a continuous curvature.

[0337] Even if the electroluminescent layer 4512 consists of a single layer, it is configured to be stacked with multiple layers. It's fine either way.

[0338] To prevent oxygen, hydrogen, moisture, carbon dioxide, etc. from entering the light-emitting element 4511, the second electrode layer A protective film may be formed on 4513 and the partition wall 4520. The protective film may be silicon nitride. It can form films, silicon nitride films, DLC films, and the like.

[0339] Also, signal line drive circuits 4503a, 4503b and scan line drive circuits 4504a, 4504b The various signals and potentials applied to the pixel section 4502 are FPC4518a, 4518 It is supplied by b.

[0340] In this embodiment, the connection terminal electrode 4515 is connected to the first electrode layer 4 of the light-emitting element 4511. Formed from the same conductive film as 517, terminal electrode 4516 is a thin-film transistor 4509 and 4 It is formed from the same conductive film as the source electrode layer and drain electrode layer of 510.

[0341] The connecting terminal electrode 4515 is connected to the terminal of FPC4518a via the anisotropic conductive film 4519. They are electrically connected.

[0342] The substrate located in the direction of light extraction from the light-emitting element 4511 must be translucent. In that case, glass plate, plastic plate, polyester film or acrylic film A translucent material like M is used.

[0343] Furthermore, in addition to inert gases such as nitrogen and argon, UV-curable resin can also be used as the filler 4507. Oils or thermosetting resins can be used, such as PVC (polyvinyl chloride), acrylic, Polyimide, epoxy resin, silicone resin, PVB (polyvinyl butyral) or EV A (ethylene vinyl acetate) can be used. In this embodiment, nitrogen is used as a filler. I used a prime element.

[0344] Furthermore, if necessary, a polarizing plate or circular polarizing plate (including elliptical polarizing plate) may be placed on the emission surface of the light-emitting element. You may also appropriately incorporate optical films such as phase difference plates (λ / 4 plate, λ / 2 plate) and color filters. Furthermore, an anti-reflective coating may be provided on the polarizing plate or circular polarizing plate. For example, by the surface irregularities An anti-glare treatment can be applied to diffuse reflected light and reduce glare.

[0345] The signal line drive circuits 4503a and 4503b, and the scan line drive circuits 4504a and 4504b are Drive turns formed by a single-crystal semiconductor film or polycrystalline semiconductor film on a separately prepared substrate It may be implemented in the circuit. Also, only the signal line drive circuit, or part of it, or the scan line drive circuit The road may be formed separately or partially, and this embodiment is configured as shown in Figure 29. Not limited.

[0346] Through the above process, a highly reliable light-emitting display device (display panel) is manufactured as a semiconductor device. It is possible.

[0347] This embodiment can be implemented in appropriate combination with the configurations described in other embodiments. That is the case.

[0348] (Embodiment 9) Semiconductor devices can be used as electronic paper. Electronic paper displays information. It can be used in electronic devices in any field that does so. For example, electronic paper Using paper, ebooks, posters, in-vehicle advertisements such as trains, and credit cards. This can be applied to displays on various cards such as GI cards. An example of an electronic device is... This is shown in Figures 30 and 31.

[0349] Figure 30(A) shows poster 2631 made with electronic paper. In the case of printed materials, advertisements are changed manually, but with electronic paper... It allows you to change the ad display in a short amount of time. Furthermore, the display remains stable without any distortion. This can be obtained. Furthermore, the poster may be configured to transmit and receive information wirelessly.

[0350] Figure 30(B) also shows in-vehicle advertisements 2632 on trains and other vehicles. In the case of printed paper, advertisements are changed manually, but using electronic paper... This allows you to change the ad display quickly without requiring a lot of manpower. Also, the display will not break down. A stable image can be obtained without any issues. Furthermore, the poster is configured to transmit and receive information wirelessly. That is also acceptable.

[0351] Figure 31 also shows an example of eBook 2700. For example, eBook 2700 is, It consists of two enclosures, enclosure 2701 and enclosure 2703. Enclosure 2701 and enclosure The body 2703 is integrated with the shaft portion 2711, and opens and closes around the shaft portion 2711 as an axis. It is possible to perform operations. This configuration makes it possible to operate like a paper book. This is the result.

[0352] The display unit 2705 is incorporated into the housing 2701, and the display unit 2707 is incorporated into the housing 2703. It is included. Display units 2705 and 2707 are configured to display a continuation screen. Alternatively, a configuration that displays different screens is also acceptable. For example, text is displayed on the right-hand display unit (display unit 2705 in Figure 31), and the left-hand display unit An image can be displayed on the display unit 2707 in Figure 31.

[0353] Furthermore, Figure 31 shows an example in which the housing 2701 is equipped with an operating unit, etc. For example, housing 2 Unit 701 is equipped with a power supply 2721, operation keys 2723, speaker 2725, and the like. The page can be turned using operation key 2723. Note that the key is located on the same side as the display unit of the casing. It may also be configured to include a board or pointing device. Furthermore, the back of the enclosure or On the side, there are external connection terminals (earphone jack, USB terminal, or AC adapter and USB A configuration that includes terminals that can connect to various cables such as cables, a recording medium insertion section, and so on. It may also be done this way. Furthermore, the eBook 2700 is configured to have the functionality of an electronic dictionary. That's fine.

[0354] Furthermore, the e-book 2700 may be configured to transmit and receive information wirelessly. By wireless means, The system will be configured to allow users to purchase and download desired book data from an e-book server. It is also possible.

[0355] (Embodiment 10) In this embodiment, the pixel configuration and pixel operation applicable to the liquid crystal display device are described below. Let me explain. Note that the operating mode of the liquid crystal element in this embodiment is TN(Twist (ed Nematic) mode, IPS (In-Plane-Switching) mode D, FFS (Fringe Field Switching) mode, MVA (Multi ti-domain Vertical Alignment) mode, PVA(Pat terned Vertical Alignment), ASM(Axially S ymmetric aligned Micro-cell) mode, OCB (Opti cal Compensated Birefringence) mode, FLC (Fe rroelectric Liquid Crystal) mode, AFLC (Anti Ferroelectric Liquid (crystal), etc. can be used. ru.

[0356] Figure 41(A) shows an example of a pixel configuration applicable to a liquid crystal display device. Pixel 508 0 has a transistor 5081, a liquid crystal element 5082, and a capacitive element 5083. The gate of transistor 5081 is electrically connected to wiring 5085. Transistor 508 The first terminal of 1 is electrically connected to wiring 5084. The second terminal of transistor 5081 is It is electrically connected to the first terminal of the liquid crystal element 5082. The second terminal of the liquid crystal element 5082 is wired It is electrically connected to 5087. The first terminal of the capacitive element 5083 is connected to the first terminal of the liquid crystal element 5082. The terminals are electrically connected. The second terminal of the capacitive element 5083 is electrically connected to the wiring 5086. It is done. Note that the first terminal of a transistor is either the source or the drain. The second terminal of a transistor is the other end of either the source or the drain. If the first terminal of the transistor is the source, then the second terminal of the transistor is the drain. Similarly, if the first terminal of the transistor is the drain, then the second terminal of the transistor This will be the source.

[0357] Wiring 5084 can function as a signal line. The signal line is input from outside the pixel. This is wiring for transmitting the signal voltage to pixel 5080. Wiring 5085 is a scan line. It can be made to work. The scan line is for controlling the on / off state of transistor 5081. This is wiring. Wiring 5086 can function as a capacitance line. A capacitance line is a capacitance element. This is the wiring for applying a predetermined voltage to the second terminal of the 5083. Transistor 5081 is, It can function as a switch. The capacitive element 5083 can function as a holding capacitor. It is possible. The retained capacitance is such that even when the switch is off, the signal voltage is maintained when the liquid crystal element 5 This is a capacitive element to ensure that the current continues to flow to 082. Wiring 5087 is the counter electrode. This allows it to function. The counter electrode applies a predetermined voltage to the second terminal of the liquid crystal element 5082. These are wires for [purpose]. However, the functions that each wire can perform are limited to these. Furthermore, it can have various functions. For example, by changing the voltage applied to the capacitance line... Furthermore, the voltage applied to the liquid crystal element can also be adjusted. Note that transistor 5081 is Since it only needs to function as a switch, the polarity of the transistor 5081 can be P-channel type. And an N-channel type is also acceptable.

[0358] Figure 41(B) shows an example of a pixel configuration that can be applied to a liquid crystal display device. The pixel configuration example shown in Figure 41(A) omits wiring 5087. Furthermore, the second terminal of the liquid crystal element 5082 and the second terminal of the capacitive element 5083 are electrically connected. Except for the difference in the connected points, the configuration is similar to the pixel configuration example shown in Figure 41(A). The pixel configuration example shown in Figure 41(B) is particularly characterized by the liquid crystal element being in lateral electric field mode (IP). This applies when the liquid crystal element is horizontally charged. In field mode, the second terminal of liquid crystal element 5082 and the second terminal of capacitive element 5083 are Since they can be formed on the same substrate, the second terminal of the liquid crystal element 5082 and the capacitive element 5 This is because it is easy to electrically connect it to the second terminal of 083. Figure 41(B) By using the pixel configuration shown, the wiring 5087 can be omitted, thus simplifying the manufacturing process. This allows for a reduction in manufacturing costs.

[0359] The pixel configuration shown in Figure 41(A) or Figure 41(B) is arranged in a matrix. This makes it possible to form the display unit of a liquid crystal display device, which can then display various images. This can be done. Figure 41(C) shows multiple pixel configurations arranged in a matrix, as shown in Figure 41(A). This is a diagram showing the circuit configuration when the display unit is installed. The circuit configuration shown in Figure 41(C) is the one that the display unit has. This is a diagram showing four pixels extracted from multiple pixels. And, column i, row j (i, The pixels located at (where j is a natural number) are denoted as pixels 5080_i,j, and pixels 5080_i,j Wirings 5084_i, 5085_j, and 5086_j are electrically connected to each other. It continues. Similarly, for pixels 5080_i+1,j, wiring 5084_i+1, wiring 5085_j is electrically connected to wiring 5086_j. Similarly, pixels 5080_i,j For +1, wiring 5084_i, wiring 5085_j+1, wiring 5086_j+1 and electricity They are connected electrically. Similarly, for pixels 5080_i+1,j+1, wiring 5084_ i+1 is electrically connected to wiring 5085_j+1 and wiring 5086_j+1. Wiring can be shared by multiple pixels belonging to the same column or row. In the pixel configuration shown in 41(C), wiring 5087 is the counter electrode, and the counter electrode is the counter electrode for all pixels. Since they are common in the basics, the notation for wiring 5087 using natural numbers i or j is This will not be done. However, it is also possible to use the pixel configuration shown in Figure 41(B). Therefore, even if wiring 5087 is listed in the configuration, wiring 5087 is not mandatory, and other wiring It can be omitted by being shared with lines, etc.

[0360] The pixel configuration shown in Figure 41(C) can be driven by various methods. In particular, By being driven by a method called flow drive, the degradation (burn-in) of the liquid crystal elements is prevented. It can be suppressed. Figure 41(D) shows a dot inversion drive, which is one type of AC drive. In the case of this, the timing of the voltage applied to each wiring in the pixel configuration shown in Figure 41(C) This is a diagram representing a chart. By performing dot inversion driving, AC driving is performed. It can suppress the flicker (flickering) that is visible when the image is broken.

[0361] In the pixel configuration shown in Figure 41(C), the pixels electrically connected to wiring 5085_j In this case, the switch is in the selected state (on state) during the jth gate selection period within a 1-frame period. It enters a state (and remains in an unselected state (off state) during other periods. Then, the j-gate selection... After the selection period, a selection period for the (j+1)th gate is provided. The scanning is performed sequentially in this manner. As a result, all pixels are selected sequentially within one frame period. Figure 41(D) shows In the timing chart, a high voltage state (high level) occurs in that pixel. When the switch is in the selected state, the voltage becomes low (low level), which then deselects it. Note that this is the case when the transistor in each pixel is of the N-channel type, not the P-channel type. When a transistor of a certain type is used, the relationship between voltage and selected state is different from that of an N-channel type. It is the opposite.

[0362] In the timing chart shown in Figure 41(D), the jth frame in the kth frame (where k is a natural number) During the gate selection period, a positive signal voltage is applied to the wiring 5084_i used as a signal line. Then, a negative signal voltage is applied to wiring 5084_i+1. And in the k-th frame... During the (j+1)th gate selection period, a negative signal voltage is applied to wiring 5084_i, and wiring 5 A positive signal voltage is applied to 084_i+1. Subsequently, each signal line is selected by the gate selection. A signal with reversed polarity is applied alternately at each selection period. As a result, in the k-th frame... A positive signal voltage is applied to pixels 5080_i,j, and a negative signal voltage is applied to pixels 5080_i+1,j. A negative signal voltage is applied to pixels 5080_i,j+1, and a positive signal voltage is applied to pixels 5080_i+1,j+1. The following signal voltages will be applied to each of them. Then, in the k+1th frame, For each pixel, a signal voltage with the opposite polarity to the signal voltage written in the k-th frame. The voltage is written. As a result, in the k+1th frame, pixels 5080_i,j A negative signal voltage is applied to pixel 5080_i+1,j, and a positive signal voltage is applied to pixel 5080_i,j A positive signal voltage is applied to +1, and a negative signal voltage is applied to pixels 5080_i+1 and j+1, respectively. This will result in different poles being obtained between adjacent pixels within the same frame. A signal voltage is applied, and furthermore, for each pixel, a signal voltage is applied every frame. A driving method in which the polarity is reversed is called dot inversion driving. By dot inversion driving, the liquid crystal This is visually apparent when the entire or a portion of the displayed image is uniform, while suppressing the degradation of the elements. Flicker can be reduced. Note that this includes wiring 5086_j and wiring 5086_j+1. The voltage applied to all wiring 5086 can be set to a constant voltage. In the timing chart for line 5084, the signal voltage is only shown in terms of polarity, but in reality In this case, the displayed polarity can result in various signal voltage values. Note that here, 1 dot We have described the case where the polarity is reversed for each (1 pixel), but this is not the only case, and it applies to multiple pixels. The polarity can also be reversed each time. For example, the signal voltage written every 2 gate selection period By reversing the polarity, the power consumption required for writing the signal voltage can be reduced. In addition, you can also reverse the polarity of each column (source line inversion), and each row It is also possible to reverse the polarity (gate line inversion).

[0363] Furthermore, the second terminal of the capacitive element 5083 in pixel 5080 is connected to the first terminal during a single frame period. A constant voltage is required. Here, the wiring 5085 used as the scan line is added to it. The applied voltage is low for most of the frame duration, and a nearly constant voltage is applied. Therefore, the connection destination of the second terminal of the capacitive element 5083 in pixel 5080 is wiring 5 085 is also acceptable. Figure 41(E) shows an example of a pixel configuration that can be applied to a liquid crystal display device. Yes. The pixel configuration shown in Figure 41(E) is different from the pixel configuration shown in Figure 41(C) in terms of wiring. 5086 is omitted, and the second terminal of the capacitive element 5083 within pixel 5080 and the previous one It is characterized by being electrically connected to wiring 5085 in the row. Specifically, In the range shown in Figure 41(E), pixels 5080_i,j+1 and pixels The second terminal of the capacitive element 5083 at 5080_i+1,j+1 is connected to wiring 5085_j They are electrically connected. In this way, the second terminal of the capacitive element 5083 in the pixel 5080 and By electrically connecting it to wiring 5085 in the previous line, wiring 5086 can be omitted. This allows for an improvement in the aperture ratio of the pixels. Note that the second terminal of the capacitive element 5083 is connected The next destination is not necessarily wiring 5085 in the previous line, but can be wiring 5085 in another line. The driving method for the pixel configuration shown in Figure 41(E) is the same as the driving method for the pixel configuration shown in Figure 41(C). The same method as the operation method can be used.

[0364] Furthermore, the capacitive element 5083 and the wiring electrically connected to the second terminal of the capacitive element 5083 are This allows us to reduce the voltage applied to the wiring 5084 used as a signal line. The pixel configuration and driving method will be explained using Figures 41(F) and 41(G). The pixel configuration shown in Figure 41(F) has a wiring ratio of 5 compared to the pixel configuration shown in Figure 41(A). There are two 086s per pixel row, and the second capacitive element 5083 in pixel 5080 It is characterized by the alternating electrical connection to the terminals at adjacent pixels. The original wiring 5086 will be referred to as wiring 5086-1 and wiring 5086-2, respectively. Specifically, in the range shown in Figure 41(F), pixel 5080_i The second terminal of the capacitive element 5083 at j is electrically connected to the wiring 5086-1_j. The second terminal of the capacitive element 5083 in pixels 5080_i+1,j is connected to wiring 5086-2 Electrically connected to _j, the second end of the capacitive element 5083 at pixel 5080_i,j+1 The child is electrically connected to wiring 5086-2_j+1 and to pixels 5080_i+1,j+1. The second terminal of the capacitive element 5083 is electrically connected to the wiring 5086-1_j+1. .

[0365] And, for example, as shown in Figure 41(G), in the k-th frame, pixel 5080_i, If a positive polarity signal voltage is written to j, wiring 5086-1_j selects the jth gate. During this period, the level will be kept low, and after the end of the j-th gate selection period, it will change to a high level. And, maintain that high level for the duration of 1 frame, and in the k+1th frame... After a negative polarity signal voltage is written during the j-th gate selection period, it is changed to a low level. Thus, after a positive polarity signal voltage is written to the pixel, the second capacitance element 5083 By changing the voltage of the wiring electrically connected to the terminal in the positive direction, the liquid crystal element is subjected to The voltage applied can be changed by a predetermined amount in the positive direction. That is, the amount written to the pixel can be changed by that amount. Because the signal voltage to be written can be reduced, the power consumption required for signal writing is reduced. This can be done. Note that if a negative polarity signal voltage is written during the j-th gate selection period... After a negative polarity signal voltage is written to the pixel, electricity is supplied to the second terminal of the capacitive element 5083. By changing the voltage of the connected wiring in the negative direction, the voltage applied to the liquid crystal element is changed. Since it can be changed by a predetermined amount in the negative direction, just like in the case of positive polarity, the pixel The signal voltage to be written can be reduced. In other words, the voltage to the second terminal of the capacitive element 5083 can be reduced. The wires that are electrically connected are those on the same row of the same frame to which a positive polarity signal voltage is applied. The pixels that receive a signal voltage and the pixels to which a negative polarity signal voltage is applied have different wiring configurations. This is preferable. Figure 41(F) shows that a positive polarity signal voltage is written in the k-th frame. Wiring 5086-1 is electrically connected to the pixel, and in the k-th frame, a negative polarity signal is transmitted. This is an example where wiring 5086-2 is electrically connected to the pixel where the voltage is written. However, This is just one example; for instance, a pixel on which a positive polarity signal voltage is written and a pixel on which a negative polarity signal voltage is written. In the case of a driving method in which pixels to be written appear every two pixels, wiring 5086-1 and The electrical connections of wiring 5086-2 are also made alternately every two pixels accordingly. This is preferable. Furthermore, if the same polarity signal voltage is written to all pixels in a row ( (Line inversion) is also possible, but in that case, one 5086 wire per row is sufficient. In other words, even in the pixel configuration shown in Figure 41(C), Figures 41(F) and 41(G) are used. As explained above, a driving method that reduces the signal voltage written to the pixels can be used. ru.

[0366] Next, the liquid crystal element is vertically aligned (VA), such as in MVA mode or PVA mode. This section describes a pixel configuration and driving method that is particularly preferred when the mode is VA mode. The advantages of this device include the elimination of the rubbing process during manufacturing, minimal light leakage when displaying black, and a low operating voltage. It has some desirable features, but the image quality deteriorates when viewed from an angle (narrow viewing angle). This also presents a problem. To widen the viewing angle in VA mode, see Figure 42(A) and Figure 42 As shown in (B), the pixel configuration has multiple subpixels in one pixel. This is effective. The pixel configuration shown in Figures 42(A) and 42(B) has 2 pixels 5080. This is an example showing a case that includes two subpixels (subpixel 5080-1, subpixel 5080-2). Yes, it exists. Furthermore, the number of subpixels in a single pixel is not limited to two; various numbers of subpixels can be used. It is possible to be there. The larger the number of subpixels, the wider the field of view can be. Multiple The subpixels can have the same circuit configuration as each other, and here all subpixels are as shown in Figure 41( The circuit configuration will be explained as being the same as shown in A). Note that the first sub-pixel 5080-1 is A device having a transistor 5081-1, a liquid crystal element 5082-1, and a capacitive element 5083-1. The respective connection relationships shall conform to the circuit configuration shown in Figure 41(A). Similarly, The second sub-pixel 5080-2 consists of a transistor 5081-2, a liquid crystal element 5082-2, and a capacitance. The circuit configuration includes element 5083-2, and the connection relationships are shown in Figure 41(A). This shall be followed.

[0367] The pixel configuration shown in Figure 42(A) uses two subpixels that make up one pixel as scan lines. It has two 5085 wires (wire 5085-1, wire 5085-2) and is used as a signal line. This configuration includes one wiring 5084 and one wiring 5086 used as a capacity line. This is how it works. By sharing the signal line and capacitance line between two subpixels, This can improve the output ratio and also simplify the signal line drive circuit. Therefore, manufacturing costs can be reduced, and the number of connection points between the LCD panel and the driver circuit IC can be reduced. This improves yield. The pixel configuration shown in Figure 42(B) consists of two sub-pixels that make up one pixel. Each pixel has one wiring 5085 used as a scan line and one wiring 50 used as a signal line. There are two 84s (wiring 5084-1, wiring 5084-2), and wiring 50 is used as a capacity line. This represents a configuration with one 86. In this way, the scan line and capacitance line are two sub-frames. By sharing the same components as is, the aperture ratio can be improved, and furthermore, the total number of scan lines can be increased. Because it can be reduced, the gate line selection period per gate can be sufficiently reduced even in high-resolution LCD panels. It can be made longer, and the appropriate signal voltage can be written to each pixel.

[0368] Figures 42(C) and 42(D) show the pixel configuration shown in Figure 42(B), where the liquid crystal elements are... This is an example of schematically representing the electrical connection state of each element by replacing it with the shape of the pixel electrodes. In Figures 42(C) and 42(D), electrode 5088-1 represents the first pixel electrode. Electrode 5088-2 represents the second pixel electrode. In Figure 42(C), the first pixel Electrode 5088-1 corresponds to the first terminal of liquid crystal element 5082-1 ​​in Figure 42(B), The second pixel electrode 5088-2 is connected to the first terminal of the liquid crystal element 5082-2 in Figure 42(B). Corresponding to this, that is, the first pixel electrode 5088-1 is the source of transistor 5081-1. Alternatively, electrically connected to one of the drains, the second pixel electrode 5088-2 is a transistor It is electrically connected to either the source or drain of 5081-2. (See Figure 42(D)) In this case, the connection relationship between the pixel electrode and the transistor is reversed. That is, the first pixel electrode 5 088-1 is electrically connected to either the source or drain of transistor 5081-2. The second pixel electrode 5088-2 is the source or drain of transistor 5081-1. It shall be electrically connected to one of the two.

[0369] The pixel configurations shown in Figures 42(C) and 42(D) are arranged alternately in a matrix. By doing so, special effects can be obtained. Such a pixel configuration and its driving method An example is shown in Figures 48(A) and 48(B). The pixel configuration shown in Figure 48(A) is: Figure 42(C) shows the parts corresponding to pixels 5080_i,j and pixels 5080_i+1,j+1. The configuration shown is as follows, and the parts corresponding to pixels 5080_i+1,j and pixels 5080_i,j+1 The configuration is as shown in Figure 42(D). In this configuration, the part shown in Figure 48(B) When driven as shown in the timing chart, during the selection period of the jth gate in the kth frame, The first pixel electrode of pixels 5080_i,j and the second pixel electrode of pixels 5080_i+1,j A positive polarity signal voltage is written to the second pixel electrode of pixels 5080_i,j and pixel 50 A negative polarity signal voltage is written to the first pixel electrode of 80_i+1,j. Furthermore, the kth During the j+1 gate selection period of the frame, the second pixel electrode of pixel 5080_i,j+1 A positive polarity signal voltage is written to the first pixel electrode of pixels 5080_i+1,j+1. The first pixel electrode of pixel 5080_i,j+1 and the second pixel of pixel 5080_i+1,j+1 A negative polarity signal voltage is written to the elementary electrode. In the k+1th frame, each pixel The polarity of the signal voltage is reversed. By doing this, in a pixel configuration that includes subpixels, This achieves a drive equivalent to dot inversion driving, while changing the polarity of the voltage applied to the signal line by 1 frame. Since it can be kept the same within the time period, the power consumption for writing the pixel signal voltage The force can be significantly reduced. Note that this includes wiring 5086_j and wiring 5086_j+1. The voltage applied to all wiring 5086 can be set to a constant voltage.

[0370] Furthermore, with the pixel configuration and driving method shown in Figures 48(C) and 48(D), The magnitude of the signal voltage written to each pixel can be reduced. This method involves making the capacitance lines electrically connected to the multiple subpixels of an element different for each subpixel. That is, by the pixel configuration and driving method shown in Figures 48(A) and 48(B) For subpixels with the same polarity written within the same frame, the capacity within the same row For subpixels that share a common line but have different polarities written within the same frame, the same row The capacitance lines are made different within the system. Then, when writing to each line is finished, each capacitance line The voltage is positive in the sub-pixel where a positive polarity signal voltage is written, and negative polarity signal voltage In sub-pixels where the signal is written, the signal voltage written to the pixel is changed in the negative direction. The size can be reduced. Specifically, the wiring 5086 used as a capacity line is reduced in size. This results in two wires (wiring 5086-1, wiring 5086-2), and the first pixel of pixels 5080_i,j. The electrode and the wiring 5086-1_j are electrically connected via a capacitive element, and the pixel 5080 The second pixel electrodes _i,j and wiring 5086-2_j are electrically connected via a capacitive element. The first pixel electrode of pixel 5080_i+1,j and the wiring 5086-2_j are connected by a capacitance element. Electrically connected via the child, the second pixel electrode of pixel 5080_i+1,j and wiring 508 6-1_j is electrically connected via a capacitive element, and the first of pixels 5080_i,j+1 The pixel electrode and the wiring 5086-2_j+1 are electrically connected via a capacitive element, and the pixel The second pixel electrode of 5080_i,j+1 and the wiring 5086-1_j+1 are connected via a capacitive element. The first pixel electrodes of pixels 5080_i+1,j+1 and wiring 5086 are electrically connected. -1_j+1 and are electrically connected via a capacitive element, and pixel 5080_i+1,j+1 The second pixel electrode and the wiring 5086-2_j+1 are electrically connected via a capacitive element. However, this is just one example; for instance, pixels on which a positive polarity signal voltage is written and pixels on which a negative polarity signal voltage is written. In the case of a driving method where the polarity signal voltage is written to pixels that appear every two pixels, wiring 5 The electrical connections of 086-1 and wiring 5086-2 are also made accordingly, alternating every two pixels. It is preferable that the same polarity signal voltage is written to all pixels in a row. It is also possible that this may occur (gate line inversion), in which case wiring 5086 will be per line One line is sufficient. In other words, even in the pixel configuration shown in Figure 48(A), Figures 48(C) and Figure Using a driving method that reduces the signal voltage written to the pixels, as explained using 48(D) It is possible to be there.

[0371] (Embodiment 11) Next, another example of the display device configuration and its driving method will be described. In contrast, a display device using a display element with a slow brightness response (long response time) to signal writing... Let's discuss the case where the display element has a long response time. In this embodiment, a liquid crystal is used as the display element with a long response time. The example given is an element, but the display element in this embodiment is not limited to this, and the signal code Various display elements with slow brightness response to noise can be used.

[0372] In typical liquid crystal displays, the brightness response to signal writing is slow, and the liquid crystal elements are slow to process the signal. Even when pressure is continuously applied, it may take more than one frame to complete the response. Yes, but even if you display a video using such a display element, it cannot faithfully reproduce the video. Furthermore, in the case of active matrix driving, the time required to write a signal to a single liquid crystal element is Typically, the signal writing period (1 frame period or 1 subframe period) is divided by the number of scan lines. This is only a short time (the scan line selection period), and the liquid crystal element cannot respond within this brief time. This is often the case. Therefore, the majority of the response of a liquid crystal element occurs during periods when no signal is being written. This will result in the dielectric constant of the liquid crystal element changing according to the transmittance of the liquid crystal element. However, the fact that the liquid crystal element responds during periods when no signal is written means that the liquid crystal element The dielectric constant of a liquid crystal element changes when there is no exchange of charge with the outside (constant charge state). This means that in the equation (charge) = (capacitance) * (voltage), the charge is constant. As the capacitance changes, the voltage applied to the liquid crystal element will depend on the response of the liquid crystal element. Therefore, the voltage will change from the voltage at the time of signal writing. When driving liquid crystal elements with slow brightness response using an active matrix, the amount of light applied to the liquid crystal elements The voltage cannot, in principle, reach the voltage at the time of signal writing.

[0373] The display device in this embodiment responds to the display element to a desired brightness within the signal writing period. To achieve this, the signal level during signal writing is pre-corrected (corrected signal). This solves the above problems. Furthermore, the response time of the liquid crystal element is high when the signal level is large. The response time of the liquid crystal element becomes shorter the larger the value, so by writing a correction signal, the response time of the liquid crystal element can be shortened. This can also be done. This method of adding a correction signal is also called overdrive. In this embodiment, the overdrive is performed when the signal writing cycle is input to the display device. The period of the image signal (input image signal period T) in Even if it is shorter than ), the signal writing frequency The signal level is corrected according to the period, allowing the display element to reach the desired brightness within the signal writing cycle. It can respond up to a certain point. The signal writing period is the input image signal period T. in Shorter Combining means, for example, dividing one original image into multiple sub-images and combining those multiple sub-images into one frame. One example is displaying them sequentially within a set period.

[0374] Next, in an active-matrix driven display device, the signal level during signal writing is corrected. An example of this method will be explained with reference to Figures 43(A) and (B). Figure 43(A) is The horizontal axis represents time, and the vertical axis represents the signal level at the time of signal writing. This graph schematically represents the time change in signal level brightness during peak hours. Figure 43(B) shows: The horizontal axis represents time, and the vertical axis represents the display level, showing the time change of the display level in a single display element. This graph schematically represents the situation. Note that if the display element is a liquid crystal element, the signal writing process is... The "number level" can be the voltage, and the "display level" can be the transmittance of the liquid crystal element. See Figure 4 for further details. The vertical axis in Figure 3(A) represents voltage, and the vertical axis in Figure 43(B) represents transmittance. In the context of overdrive, the signal level is determined by factors other than voltage (duty cycle, current, etc.). This also includes the case where the display level is transparent. This also includes cases other than transients (such as brightness and current). Note that when the voltage is 0, There are normally black types that display black (e.g., VA mode, IPS mode, etc.) and types where the voltage is 0. There are normally white displays (e.g., TN mode, OCB mode, etc.) that sometimes display white. However, the graph shown in Figure 43(B) corresponds to both, and in the case of the normally black type... The higher you go on the graph, the greater the transmittance, and in the case of a normally white type, the graph... The transmittance should be higher as you move downwards from the "F". In other words, in this embodiment... The LCD mode can be either normally black or normally white. The time axis shows the signal writing timing with a dotted line, indicating the next time after the signal writing has occurred. The period until the signal is written is called the holding period F. i This will be referred to as [this]. In this case, i is an integer and represents an index that indicates the retention period. (Figure 43) In (A) and (B), i is shown as ranging from 0 to 2, but i can be any other value. Integers are also possible (values ​​other than 0 to 2 are not shown). The retention period F is also shown. i In, The transmittance that achieves the brightness corresponding to the image signal is Ti is defined as the transmittance T in the steady state i is given by the voltage V i . The dashed line 5101 in Fig. 43(A) represents the time variation of the voltage applied to the liquid crystal element when over-driving is not performed, and the solid line 5102 represents the time variation of the voltage applied to the liquid crystal element when over-driving is performed in the present embodiment . Similarly, the dashed line 5103 in Fig. 43(B) represents the time variation of the transmittance of the liquid crystal element when over-driving is not performed, and the solid line 5104 represents the time variation of the transmittance of the liquid crystal element when over-driving is performed in the present embodiment . Note that at the end of the holding period F , the difference between the desired transmittance T and the actual transmittance is denoted as the error α . i At the end of , the desired transmittance T i and the actual transmittance is denoted as the error α i .

[0375] In the graph shown in Fig. 43(A), at the holding period F0, the desired voltage V0 is applied to both the dashed line 5101 and the solid line 510 2. Similarly, in the graph shown in Fig. 43(B), the desired transmittance T0 is obtained for both the dashed line 5103 and the solid line 5104. When over-driving is not performed, as shown by the dashed line 5101, the desired voltage V1 is applied to the liquid crystal element at the beginning of the holding period F1. However, as described above, the period during which the signal is written is extremely short compared to the holding period, and most of the holding period is in a constant charge state. Therefore , the voltage applied to the liquid crystal element during the holding period changes with the change in the transmittance, and at the end of the holding period F1, it becomes a voltage significantly different from the desired voltage V1. At this time , the dashed line 5103 in the graph shown in Fig. 43(B) also becomes significantly different from the desired transmittance T1 . During the holding period, the voltage applied to the liquid crystal element changes with the change in the transmittance, and at the end of the holding period F1, it becomes a voltage significantly different from the desired voltage V1. At this time , the dashed line 5103 in the graph shown in Fig. 43(B) also becomes significantly different from the desired transmittance T1 This results in a loss of accuracy. Consequently, the image signal cannot be displayed faithfully, and the image quality deteriorates. This happens. On the other hand, when overdrive is performed in this embodiment, solid line 510 As shown in 2, at the beginning of the holding period F1, a voltage V1' greater than the desired voltage V1 occurs. This is done so that the liquid crystal element is gradually subjected to the liquid crystal element during the holding period F1. Anticipating that the voltage will change, the voltage applied to the liquid crystal element at the end of the holding period F1 At the beginning of the holding period F1, the desired voltage V1 is set such that the voltage is near the desired voltage V1. By applying the corrected voltage V1' to the liquid crystal element, the desired voltage V1 is precisely applied to the liquid crystal element. It becomes possible to apply this. At this time, the solid line 5104 in the graph shown in Figure 43(B) As shown, the desired transmittance T1 is obtained at the end of the retention period F1. Despite remaining in a constant charge state for most of its duration, within the signal writing cycle... The response of the liquid crystal element can be realized. Next, during the holding period F2, the desired voltage V2 is greater than V1. This shows the case where the retention period is also small, but in this case as well, the retention period F2 is similar to the retention period F1. Anticipating that the voltage applied to the liquid crystal element will gradually change, at the end of the holding period F2 At the beginning of the holding period F2, the voltage applied to the liquid crystal element is set to a voltage near the desired voltage V2. Then, the corrected voltage V2' from the desired voltage V2 is applied to the liquid crystal element. Therefore, as shown by the solid line 5104 in the graph in Figure 43(B), at the end of the retention period F2 The desired transmittance T2 is obtained in the tail. Note that the retention period F1 is V i ga V i-1 If it becomes larger than the corrected voltage V i ' represents the desired voltage V i It will become larger than that. It is preferable that it be corrected to the extent that V i ga V i-1 Compared If it becomes smaller, the corrected voltage V i ' represents the desired voltage V i Compensate so that it becomes smaller than It is preferable that this be corrected. Regarding the specific correction value, the response characteristics of the liquid crystal element should be determined in advance. It can be derived by measurement. As a method of implementation in the device, the correction formula is formulated. A method of incorporating this into a logic circuit, storing the correction value in memory as a lookup table. Methods for reading correction values ​​as needed can be used.

[0376] Furthermore, when actually implementing the overdrive in this embodiment as a device, Various constraints exist. For example, voltage correction must be performed within the rated voltage range of the source driver. It must be. That is, the desired voltage is originally a large value, and the ideal correction voltage If the voltage exceeds the rated voltage of the source driver, it will not be able to be compensated for. The problems in such cases will be explained with reference to Figures 43(C) and (D). Figure 43( C) is similar to Figure 43(A), with the horizontal axis representing time and the vertical axis representing voltage, and for a certain liquid crystal element... This graph schematically represents the time change of the voltage as shown by the solid line 5105. Figure 43(D) Similar to Figure 43(B), the horizontal axis represents time and the vertical axis represents transmittance in a given liquid crystal element. This graph schematically represents the change in transmittance over time, with the solid line 5106. Note that other tables are also available. The notation method is the same as in Figures 43(A) and (B), so the explanation is omitted. Figure 43 (C) and (D) are corrective charges to achieve the desired transmittance T1 during the retention period F1. Since voltage V1' exceeds the rated voltage of the source driver, we have no choice but to set V1' = V1. This indicates a state where sufficient correction cannot be made. At this time, at the end of the retention period F1 The resulting transmittance will be a value that deviates from the desired transmittance T1 by an error α1. However, the error α1 becomes large only when the desired voltage is originally a large value, therefore the error α1 The image quality degradation caused by this phenomenon is often within an acceptable range. However, if the error α1 is large As a result, the error within the voltage correction algorithm also increases. In the voltage correction algorithm, it is assumed that the desired transmittance is obtained at the end of the holding period. When it is fixed, the error α1 is small even though in reality the error α1 is large. Because voltage correction is performed in this manner, an error will be included in the correction during the next holding period F2. As a result, the error α2 also becomes larger. Furthermore, if the error α2 becomes larger, The next error α3 becomes even larger, and so on, the errors increase in a chain reaction. Consequently, the image quality deteriorates significantly. In drives, to prevent errors from increasing in a chain reaction like this, , retention period F i Correction voltage V i When ' exceeds the rated voltage of the source driver, hold Period F i Error α at the end i We estimate the error α i Considering the size, the retention period F i+1 The correction voltage in this can be adjusted. By doing so, the error α i It has grown larger However, that's the error α i+1 Because the impact on the chain reaction of errors can be minimized, This can suppress the problem of the volume becoming excessively large. Examples of minimizing the error α2 will be explained with reference to Figures 43(E) and (F). The graph shown in Figure 43(E) further shows the correction voltage V2' of the graph shown in Figure 43(C). The time variation of the voltage when adjusted and corrected to voltage V2'' is shown as the solid line 5107. The graph shown in Figure 43(F) is not corrected for voltage as shown in the graph in Figure 43(E). This shows the change in transmittance over time in the case shown in Figure 43(D). The solid line 51 in the graph In 06, overcorrection occurs due to the correction voltage V2', but the graph shown in Figure 43(F) In the solid line 5108 in section F, the correction voltage V2'' is adjusted to account for the error α1. Overcorrection is suppressed, minimizing the error α2. Note that specific correction values ​​are... This can be derived by measuring the response characteristics of the liquid crystal element. As a method for implementing this in the device... One method involves formulating a correction formula and incorporating it into a logic circuit, or using a lookup table for the correction values. Methods such as saving the correction value to memory and reading it out as needed can be used. And these methods, correct voltage V i To add or supplement the part that calculates '. Positive voltage V i It can be incorporated into the part that calculates '. Note that the error α i―1 Considering Adjusted correction voltage V i Correction amount of '' (desired voltage V i The difference between is V i The correction amount of ' It is preferable to make it small. That is, |V i ´´-V i |<|V i '-V i |tosu It is preferable to do so.

[0377] Note that error α occurs when the ideal correction voltage exceeds the rated voltage of the source driver. i The value increases as the signal writing period shortens. This is because the liquid crystal decreases as the signal writing period shortens. The response time of the element also needs to be shortened, and as a result, a larger correction voltage is required. Furthermore, as a result of the increased required correction voltage, the correction voltage is increased by the source driver. The frequency of exceeding the rated voltage also increases, resulting in a large error α. i The frequency of occurrence is also high. Therefore, the overdrive in this embodiment has a short signal writing cycle. It can be said that this is effective in certain cases. Specifically, one original image is divided into multiple sub-images, and When displaying multiple sub-images sequentially within a single frame period, the images included in the image are selected from the multiple images. The system detects the movement and generates an intermediate state image of the multiple images, and between the multiple images... When inserting and driving (so-called motion-compensated double-speed drive), or when combining these methods The overdrive in this embodiment is used when the following driving methods are employed. This will have a remarkable effect.

[0378] Furthermore, in addition to the upper limit mentioned above, the rated voltage of the source driver also has a lower limit. For example, One example is when a voltage less than 0 cannot be applied. In this case, the upper limit mentioned above applies. Similarly, an ideal correction voltage cannot be applied, resulting in an error α. i It has grown bigger However, even in this case, the retention period F is the same as in the method described above. i At the end of Error α i We estimate the error α i Considering the size, the retention period F i+1 Correction in The voltage can be adjusted. Note that the rated voltage of the source driver is less than 0. If it is possible to apply a negative voltage, a negative voltage is applied to the liquid crystal element as a correction voltage. It may also be added. By doing so, the potential fluctuation due to the constant charge state can be anticipated, and the holding period F can be calculated. i At the end, the voltage applied to the liquid crystal element is the desired voltage V. i It can be adjusted to a voltage in the vicinity. ru.

[0379] Furthermore, in order to suppress the degradation of the liquid crystal elements, the polarity of the voltage applied to the liquid crystal elements is periodically reversed. This allows for the implementation of so-called reverse drive in combination with overdrive. Furthermore, the overdrive in this embodiment also includes cases where it is performed simultaneously with the reversal drive. For example, if the signal writing period is the input image signal period T in If it is 1 / 2 of that, reverse the polarity. The period of the input image signal and the period T in If the two are of similar magnitude, then the writing of the positive polarity signal and the negative polarity The writing of the sex signal will alternate every two times. In this way, the polarity is reversed. By making the charging period longer than the signal writing period, the frequency of pixel charging and discharging can be reduced. Power consumption can be reduced. However, if the period for reversing the polarity is made too long, the polarity difference... A problem may occur where the brightness difference caused by this is recognized as flicker, so the polarity is reversed. The period is the input image signal period T in It is preferable that it is about the same length as or shorter than that.

[0380] (Embodiment 12) Next, another example of the display device configuration and its driving method will be described. In this case, multiple images are used to interpolate the motion of an image (input image) that is input from outside the display device. The display device generates an image based on the input image, and the generated image (generated image) and the input This section explains how to display images sequentially. Note that the generated images will complement the movement of the input images. By creating images that are similar to the ones shown, the motion of the video can be made smoother, and furthermore, the hall This can improve the problem of video quality degradation due to afterimages caused by motion blur. The following explains the process. Ideally, video display should use the brightness of individual pixels in real time. This is achieved by controlling the pixels in real time, but real-time individual control of pixels is difficult. The problems include the enormous number of circuits, the lack of wiring space, and the massive amount of data in the input images. There are problems that make it difficult to implement. Therefore, displaying video on a display device is difficult. The display shows multiple still images sequentially at a fixed interval, making the display appear as a video. This is being done. This period (in this embodiment, it is called the input image signal period, T in and (represented by) is standardized; for example, 1 / 60 second in the NTSC standard and 1 in the PAL standard. It is 50 seconds. Even with a period of this magnitude, the CRT, which is an impulse-type display device, moves No problems occurred with the image display. However, in hold-type display devices, these standards If a video conforming to this format is displayed as is, the display will be affected by afterimages and other issues caused by the hold-type display. A problem occurs where the image becomes blurry (hold blur). The blurring is due to a mismatch between the unconscious interpolation of human eye movement and the hold-type display. (Discrepancy) is recognized, so the input image information is different from conventional standards. This can be reduced by shortening the period (approaching real-time individual control of pixels). However, shortening the input image signal period would require changes to the standard and would also increase the amount of data. This will be difficult. However, based on a standardized input image signal The display device generates an image that interpolates the motion of the input image, and then uses this generated image to... By interpolating and displaying the input image, it is possible to hold the image without changing the standard or increasing the amount of data. Blurring can be reduced. In this way, the display device generates an image signal based on the input image signal. Furthermore, we will refer to the process of interpolating the movement of an input image as video interpolation.

[0381] The video interpolation method in this embodiment can reduce video blur. The video interpolation method in this embodiment can be divided into an image generation method and an image display method. And, for specific patterns of movement, a different image generation method and / or image display method. By using this method, motion blur in videos can be effectively reduced. (Figure 44(A) and (B) is a schematic diagram illustrating an example of a video interpolation method in this embodiment. In Figures 44(A) and (B), the horizontal axis represents time, and each horizontal position is different. This indicates the timing at which the image is processed. The section labeled "Input" represents the input image signal. This indicates the timing at which the input is received. Here, two images that are adjacent in time are considered: We are focusing on images 5121 and 5122. The input image has a period T. in Enter at intervals of It is done. Note that the period T in The length of one instance is referred to as one frame or one frame duration. There is a part that says "Generation". The part that says "Generation" is the timing when a new image is generated from the input image signal. This represents the raw data generated based on images 5121 and 5122. We are focusing on the completed image, image 5123. The part labeled "Display" is displayed on the display device. This indicates the timing at which the image is displayed. Note that images other than the one being focused on are... Although it is only indicated by a dashed line, by treating it in the same way as the image of interest, this implementation will This allows us to implement one example of a video interpolation method in terms of form.

[0382] An example of the video interpolation method in this embodiment is shown in Figure 44(A), which involves temporal interpolation. The generated image is created based on two adjacent input images, and the two input images are displayed together. By displaying it during the gaps in the timing, video interpolation can be performed. The display period of the displayed image is preferably half the input period of the input image. However, it is not limited to this, and various display periods can be used. For example, the display period can be set to the input period. By making it shorter than half of the length, the video can be displayed more smoothly. Alternatively, enter the display cycle. By making the period longer than half, power consumption can be reduced. Note that in this case, the adjacent time intervals are The image is generated based on two adjacent input images, but the number of input images used is limited to two. It is not limited to three adjacent numbers, and various numbers can be used. For example, three adjacent numbers in time (or more than three). If you generate an image based on a good input image, it will be better than if you use two input images. High-precision generated images can be obtained. Note that the display timing of image 5121 is determined by the image The display timing relative to the input timing is the same as the input timing of 5122. Although it is set to a 1-frame delay, the display timing in the video interpolation method in this embodiment The timing is not limited to this, and various display timings can be used. For example, input timing The display timing relative to the timing can be delayed by one frame or more. Therefore, the display timing of the generated image, image 5123, can be delayed, so image 5 This allows for more time to be allocated for the generation of 123, resulting in lower power consumption and manufacturing costs. This leads to a decrease. Furthermore, if the display timing is too late relative to the input timing, Because the period for which force images are retained increases, the amount of memory required for retention also increases. A display delay of approximately 1 to 2 frames relative to the input timing is preferable. It seems so.

[0383] Here, the specific details of image 5123, which is generated based on images 5121 and 5122, An example of a generation method is described below. To interpolate a video, the motion of the input image is detected. Although necessary, in this embodiment, a block map is used to detect the motion of the input image. A method called the Ching method can be used. However, it is not limited to this, and various other methods can be used. (Methods such as taking the difference between image data and using the Fourier transform can be used.) In block matching, first, the image data for one input image (here, image) The image data (5121) is stored in a data storage means (semiconductor memory, RAM, or other memory circuit). It is stored in memory. Then, the image in the next frame (in this case, image 5122) is stored in multiple regions. Divide the area into regions. The divided regions should be rectangles of the same shape, as shown in Figure 44(A). It is possible to do this, but is not limited to this, and various things (change the shape or size depending on the image) (etc.) can be done. After that, each divided area is stored in the data storage means. The data is compared with the image data of the previous frame (in this case, the image data of image 5121). The system searches for regions where the image data is similar. In the example in Figure 44(A), image 5122 is Search within image 5121 for regions 5124 and regions 512 6 is considered to have been searched. Note that when searching within image 5121, the search range is limited. It is preferable that it be defined. In the example in Figure 44(A), the search range is region 5124. A region 5125, which is about four times the size of the area, has been set. By making it larger, detection accuracy can be improved even in fast-moving videos. Furthermore, if the search is conducted too broadly, the search time becomes enormous, and motion detection... Because this would be difficult to achieve, region 5125 is about 2 to 6 times the size of region 5124. It is preferable that it is so. Subsequently, the explored region 5126 and the region in image 5122 The difference in position from region 5124 is calculated as motion vector 5127. Motion vector 512 7 represents the movement of the image data in region 5124 over a single frame period. To generate an image representing an intermediate state of motion, the direction of the motion vector remains the same, but the magnitude is changed. A modified image generation vector 5128 is created and included in region 5126 in image 5121. By moving the image data according to the image generation vector 5128, image 5123 This process forms image data within region 5129. These processes are then performed on image 512. By performing this operation on all regions in 2, image 5123 can be generated. Then, by sequentially displaying input image 5121, generated image 5123, and input image 5122... The video can be interpolated. Note that object 5130 in the image is in image 5121 and image 5121. In image 5122, the position is different (i.e., it has moved), but in the generated image 512 Point 3 is the midpoint of the object in images 5121 and 5122. Displaying images can smooth out video motion and eliminate blurring caused by afterimages and other issues. Brightness can be improved.

[0384] Note that the size of the image generation vector 5128 is determined according to the display timing of image 5123. It can be determined. In the example in Figure 44(A), the display timing of image 5123. This is because it is set to the midpoint (1 / 2) of the display timing between image 5121 and image 5122. The size of the image generation vector 5128 is set to 1 / 2 of the motion vector 5127, In addition, for example, if the display timing is 1 / 3, the size will be set to 1 / 3, and the display time If the timing is 2 / 3 of the way through, the size can be set to 2 / 3.

[0385] Furthermore, by moving multiple regions with various motion vectors in this way, a new image can be created. When creating an image, there are parts of the destination region that have already been moved (overlap), and where There may also be areas (blank spaces) that are not moved from the region. The data can be corrected. One method for correcting duplicate data is to... Prioritize the methods used for averaging, the direction of the motion vector, etc., and then process the data with the highest priority. Regarding the method of using data within the image, one of the following should be prioritized: color (or brightness) or brightness ( For color correction, methods such as taking the average can be used. The image data at that position in image 5121 or image 5122 is generated as is. Method for determining the data, averaging the image data at the relevant position in image 5121 or image 5122 Methods such as taking can be used. Then, the generated image 5123 is used for image generation. By displaying the vector at timings according to its size (5128), the video motion becomes smoother. Furthermore, this can be done, and the problem of video quality degrading due to afterimages caused by hold-and-drive is resolved. The problem can be improved.

[0386] Another example of the video interpolation method in this embodiment is shown in Figure 44(B), which involves time The generated image is created based on two adjacent input images, and the two input images are displayed in a way that the two input images are displayed in a way that the two input images are displayed in When displaying during the intervals between the indicated timings, each display image is further divided into multiple sub-images. By dividing the image into segments for display, interpolation of the video can be performed. In this case, the image display cycle In addition to the advantages of a shorter duration, dark images are displayed periodically (the display method is Advantages can also be obtained by making it closer to a pulse type. In other words, the image display period is when the image input This method reduces the blurring of the video due to afterimages, etc., compared to simply making the force period half the length. Further improvements can be made. In the example in Figure 44(B), "input" and "generation" are shown in Figure 4. The same process as in example 4(A) can be performed, so the explanation will be omitted. Figure 44(B) In the example, "display" means splitting one input image and / or a generated image into multiple sub-images. This allows for display. Specifically, as shown in Figure 44(B), image 5121 can be displayed. By dividing the image into sub-images 5121a and 5121b and displaying them sequentially, the image appears to the human eye. It is perceived that 5121 is displayed, and image 5123 is sub-images 5123a and 512 By dividing it into 3b sections and displaying them sequentially, the human eye perceives that image 5123 is being displayed. To do this, image 5122 is divided into sub-images 5122a and 5122b and displayed sequentially. Then, the human eye perceives that image 5122 is displayed. In other words, the human eye perceives it as if it were displayed. The image to be recognized will be the same as in the example in Figure 44(A), but the display method will be impulse type This allows for a closer approximation, further improving the clarity of videos caused by afterimages and other issues. In Figure 44(B), the number of sub-image divisions is shown as 2, but this is not limited to this and can vary. Any number of divisions can be used. Note that the timing at which the sub-images are displayed is shown in Figure 44(B In this case, the intervals are equal (1 / 2), but this is not limited to this, and various display timings are possible. It can be used. For example, dark sub-images (5121b, 5122b, 5123b) By making the display timing earlier (specifically, from 1 / 4 to 1 / 2 of the timing), the display This method allows for a more impulse-type approach, thus reducing the blurring of videos caused by afterimages, etc. It can be further improved by delaying the display timing of dark sub-images (specifically, 1 / By doing this at 2 to 3 / 4 of the time, the display period for bright images can be extended. This can improve display efficiency and reduce power consumption.

[0387] Another example of the video interpolation method in this embodiment is detecting the shape of moving objects in an image. This is an example of performing different processing depending on the shape of a moving object. See Figure 44(C) for an example. This indicates the timing of the display, similar to the example in Figure 44(B), but the displayed content is This indicates that the text is moving (also known as scrolling text, subtitles, captions, etc.). It is. Furthermore, the "input" and "generation" can be the same as in Figure 44(B). (Not illustrated.) The blurriness of the video in hold mode is due to the nature of the moving object. The degree of this can vary. It's especially noticeable when the text is moving. Yes. Because when reading moving text, you inevitably follow the text with your eyes. This is because hold blur is more likely to occur. Furthermore, the outlines of the text are clear. Because there are many of these, the blurring caused by hold blur can be further emphasized. This involves determining whether a moving object within the image is text, and if it is text, performing further special processing. Doing so is effective in reducing hold blur. Specifically, moving within the image For an object, contour detection and / or pattern detection are performed to determine if the object is a character. If motion interpolation is determined to be present, motion interpolation will be performed even between sub-images that were split from the same image. Furthermore, by displaying intermediate states of the movement, the movement can be made smoother. If it is determined that it is not text, it will be split from the same image as shown in Figure 44(B). If a sub-image is used, the position of a moving object can be displayed without changing its position. Figure 44(C In the example shown, the region 5131, which was determined to be a character, is moving upwards. However, the position of region 5131 is different in image 5121a and image 5121b. The same applies to images 5123a and 5123b, and images 5122a and 5122b. This way, for moving characters where hold blur is particularly easily recognized, the normal movement It can make motion even smoother than compensated motion interpolation, thus reducing motion blur in videos. The blurriness can be further improved.

[0388] (Embodiment 13) Semiconductor devices can be applied to various electronic devices (including amusement machines). For example, television equipment (also called television or television receiver), Computer monitors, digital cameras, digital video cameras, etc. Digital photo frames, mobile phones (also called mobile phones or mobile phone devices), portable games Examples include machines, mobile information terminals, sound playback devices, and large game machines such as pachinko machines.

[0389] Figure 32(A) shows an example of the television equipment 9600. In the case of 00, the display unit 9603 is incorporated into the housing 9601. The display unit 9603 displays It is possible to display an image. Also, here, the stand 9605 is used to display the housing 9601 This shows a configuration that supports this.

[0390] The television unit 9600 is operated using the control switches on the housing 9601 and a separate remote control. This can be done using the control unit 9610. The remote control unit 9610 has control keys The 9609 allows you to control the channel and volume, and the information is displayed on the display unit 9603. The video can be controlled. Furthermore, the remote control unit 9610 can be controlled by the remote control unit. A display unit 9607 may be provided to display the information output from 9610.

[0391] The television system 9600 will consist of a receiver, modem, and other components. It can receive more general television broadcasts, and furthermore, it can receive them via a modem, either wired or wireless. By connecting to the communication network, one-way (sender to receiver) or two-way communication is possible. It is also possible to communicate information (between a sender and a receiver, or between receivers, etc.).

[0392] Figure 32(B) shows an example of the digital photo frame 9700. For example, The photo frame 9700 has a display unit 9703 integrated into the housing 9701. Section 9703 is capable of displaying various images, such as those captured by a digital camera. By displaying the image data, it can function just like a regular photo frame.

[0393] The Digital Photo Frame 9700 includes an operating unit and external connection terminals (USB terminal, USB port). A structure that includes terminals that can connect to various cables such as B cables, a recording medium insertion section, etc. These components may be incorporated on the same surface as the display unit, but may also be on the sides or back. It is desirable to include it as it improves the design. For example, the recording medium of a digital photo frame. A memory device containing image data captured by a digital camera is inserted into the body insertion site. The system can capture data and display the captured image data on the display unit 9703.

[0394] Furthermore, the digital photo frame 9700 may be configured to send and receive information wirelessly. It is also possible to configure the system to acquire and display desired image data wirelessly.

[0395] Figure 33(A) shows a portable gaming machine, which consists of two cabinets, cabinet 9881 and cabinet 9891. It is connected by a connecting part 9893 so that it can be opened and closed. The housing 9881 has a display unit The 9882 is incorporated, and the display unit 9883 is incorporated into the housing 9891. The portable gaming machine shown in 33(A) also includes a speaker section 9884 and a recording medium insertion section 988 6. LED lamp 9890, input means (operation key 9885, connection terminal 9887, sensor 9 888 (force, displacement, position, velocity, acceleration, angular velocity, rotational speed, distance, light, liquid, magnetism, temperature, Chemical substances, sound, time, hardness, electric field, electric current, voltage, power, radiation, flow rate, humidity, gradient, vibration Equipped with a function to measure motion, odor, or infrared radiation, a microphone (9889), etc. Of course, the configuration of portable gaming machines is not limited to those described above, and at least semiconductor equipment Any configuration that includes a storage unit is acceptable, and other auxiliary equipment may be provided as appropriate. The portable gaming machine shown in Figure 33(A) contains a program or data recorded on the recording medium. It has a function to read data and display it on the display unit, and it can also share information by wirelessly communicating with other portable gaming machines. It has the function of [doing something]. However, the functions of the portable gaming machine shown in Figure 33(A) are not limited to this. It can have various functions.

[0396] Figure 33(B) shows an example of a large-scale gaming machine, the slot machine 9900. The machine 9900 has a display unit 9903 integrated into the casing 9901. The Machine 9900 also features other operating mechanisms such as a start lever and stop switch, and coins. It is equipped with an input slot, speaker, etc. Of course, the configuration of the slot machine 9900 is as described above. It is not limited to just one object, but any configuration that includes at least a semiconductor device, and other auxiliary equipment The configuration can be set as appropriate.

[0397] Figure 34(A) shows an example of the mobile phone 1000. The mobile phone 1000 has a housing In addition to the display unit 1002 incorporated into 1001, there are also operation buttons 1003 and an external connection port 10 It is equipped with 04, speaker 1005, microphone 1006, etc.

[0398] The mobile phone 1000 shown in Figure 34(A) allows information to be conveyed by touching the display unit 1002 with a finger or the like. You can enter information. Also, operations such as making phone calls or sending emails are performed on the display. This can be done by touching 1002 with a finger or other object.

[0399] The display unit 1002 has three main modes. The first is a display that primarily displays images. The first mode is display mode, the second is input mode which is mainly for inputting information such as characters. The third is display mode. This is a display + input mode, which is a combination of two modes: display mode and input mode.

[0400] For example, when making a phone call or composing an email, the display unit 1002 is used for text input. In this case, the primary text input mode should be used, and you should perform the input operation for the characters displayed on the screen. It is preferable to display a keyboard or number buttons on most of the screen of the display unit 1002. It seems so.

[0401] Furthermore, the mobile phone 1000 contains sensors that detect tilt, such as a gyroscope and an accelerometer. By providing a detection device, the orientation (vertical or horizontal) of the mobile phone 1000 can be determined, and the display The display on the display unit 1002 can be automatically switched.

[0402] Furthermore, the screen mode can be switched by touching the display unit 1002 or by operating the housing 1001. This is done by operating button 1003. Also, the type of image displayed on display unit 1002 Therefore, it is also possible to switch between them. For example, the image signal displayed on the display unit is a video signal. Switch to display mode if it's data, or to input mode if it's text data.

[0403] Furthermore, in input mode, the signal detected by the optical sensor of the display unit 1002 is detected and displayed If there is no input via touch operation on unit 1002 for a certain period of time, the screen mode will be changed to input mode. You may also control the system to switch from that display mode to a different mode.

[0404] The display unit 1002 can also function as an image sensor. For example, the display unit 10 By touching the palm or fingers to device 02, the device can capture palm prints, fingerprints, etc., to perform identity verification. It can also be used. In addition, the display unit has a backlight that emits near-infrared light or a sensor that emits near-infrared light. Using a light source designed for imaging, it is also possible to image finger veins, palmar veins, and other veins.

[0405] Figure 34(B) is also an example of a mobile phone. The mobile phone in Figure 34(B) has a housing 9411. The display device 9410 includes a display unit 9412 and an operation button 9413, and the housing 9401 Operation buttons 9402, external input terminal 9403, microphone 9404, speaker 9405, and It has a communication device 9400 which includes a light-emitting unit 9406 that emits light when an incoming call is received, and has a display function. The display device 9410 is detachable from the communication device 9400, which has telephone functionality, in two directions indicated by the arrows. Yes. Therefore, it is also possible to attach the short axes of the display device 9410 and the communication device 9400 together. The long axes of the display device 9410 and the communication device 9400 can also be mounted together. If only the function is required, remove the display device 9410 from the communication device 9400, and the display device The 9410 can also be used independently. The communication device 9400 and the display device 9410 are connected wirelessly. Images or input information can be sent and received via wireless or wired communication, and each has a rechargeable battery. Close Terry. [Explanation of Symbols]

[0406] 100 circuit boards 102 Conductive film 104 Conductive film 106 Insulating layer 108 Conductive film 110 Conductive film 112 Semiconductor film 114 Insulating layer 116 Conductive layer 117 Conductive layer 119 Contact Holes 120 gate wiring 122 Wiring 124 Wiring 125 Contact Holes 126 Wiring 127 Insulating layer 128 Wiring 132 Electrode 136 Electrode 138 Electrode 140 Holding capacity section 150 pixel section 152 transistors 154 Holding capacity section 156 transistors 158 Holding capacity section 161 Resist Mask 162 Resist Mask 163 Resist Mask 164 Resist Mask 165 Resist Mask 168 Resist Mask 180 circuit boards 182 circuit boards 232 Electrode 236 Electrode 238 Electrode 400 circuit boards 401 Light-shielding part 402 Diffraction Grating 403 Gray Tone Mask 411 circuit board 412 Semi-transparent part 413 Light-shielding part 414 Halftone Mask 580 circuit boards 581 Thin-film transistor 583 Insulating layer 587 Electrode layer 588 Electrode layer 589 Spherical particles 594 Cavity 595 Filling material 596 circuit boards 1000 mobile phones 1001 enclosure 1002 Display section 1003 Operation Buttons 1004 External connection port 1005 Speaker 1006 Mike 102a conductive layer 102b conductive layer 102c conductive layer 104a conductive layer 104b Conductive layer 108a conductive layer 108b Conductive layer 108c conductive layer 108d conductive layer 108e conductive layer 110a conductive layer 110b Conductive layer 110c conductive layer 112a Semiconductor layer 112b Semiconductor layer 113a n+ area 114a Insulating layer 114b Insulating layer 118a Contact Hole 118b Contact Hole 171a Resist Mask 171b Resist Mask 171c Resist Mask 172a Resist Mask 172b Resist Mask 172c Resist Mask 181a Light blocking layer 181b Semi-transparent layer 183a Semi-transparent layer 183b Light blocking layer 2600 TFT substrate 2601 Opposing substrate 2602 Sealant 2603 Element Layer 2604 display elements 2605 Colored layer 2606 Polarizing plate 2607 Polarizing plate 2608 Wiring circuit section 2609 Flexible Wiring Board 2610 cold cathode tube 2611 Reflector 2612 Circuit board 2613 Diffuser 2631 Poster 2632 In-car advertisement 2700 eBooks 2701 enclosure 2703 Casing 2705 ​​Display section 2707 Display section 2711 Shaft 2721 Power supply 2723 Operation Keys 2725 Speaker 4001 circuit board 4002 pixel section 4003 Signal Line Drive Circuit 4004 Scan Line Drive Circuit 4005 Sealant 4006 circuit board 4008 Liquid Crystal Layer 4010 Thin-Film Transistor 4011 Thin-film transistor 4013 Liquid crystal element 4015 Connection terminal electrode 4016 Terminal electrode 4018 FPC 4019 Anisotropic conductive film 4020 Insulating layer 4021 Insulating layer 4030 Pixel electrode layer 4031 Counter electrode layer 4032 Insulating layer 4051 circuit board 4501 circuit board 4502 pixel section 4505 Sealant 4506 circuit board 4507 Filling material 4509 Thin-film transistor 4510 Thin-Film Transistor 4511 Light-emitting element 4512 Electroluminescent layer 4513 Electrode layer 4515 Connection terminal electrode 4516 Terminal electrode 4517 Electrode layer 4519 Anisotropic conductive film 4520 Bulkhead 5080 pixels 5081 Transistor 5082 Liquid crystal element 5083 Capacitive element 5084 Wiring 5085 Wiring 5086 Wiring 5087 Wiring 5088 Electrode 5101 Dashed line 5102 Solid line 5103 Dashed line 5104 Solid line 5105 Solid line 5106 Solid line 5107 Solid line 5108 Solid line 5121 images 5122 images 5123 images 5124 area 5125 area 5126 area 5127 Vectors 5128 Vectors for image generation 5129 area 5130 Object 5131 area 5300 circuit boards 5301 pixel section 5302 Scan line drive circuit 5303 Signal Line Drive Circuit 5400 circuit boards 5401 pixel section 5402 Scan Line Drive Circuit 5403 Signal Line Drive Circuit 5404 Scan Line Drive Circuit 590a black area 590b White area 6400 pixels 6401 Switching Transistor 6402 drive transistor 6403 Capacitive element 6404 Light-emitting element 6405 signal line 6406 scan lines 6407 Power line 6408 Common electrode 6420 pixels 6423 Capacitive element 6426 Wiring 7001 TFT 7002 Light-emitting element 7003 Cathode 7004 Emitting layer 7005 Anode 7011 Drive TFT 7012 Light-emitting element 7013 Cathode 7014 Emitting layer 7015 Anode 7016 Shielding membrane 7017 Conductive film 7021 Drive TFT 7022 Light-emitting element 7023 Cathode 7024 Emitting layer 7025 Anode 7027 Conductive film 9400 Communication equipment 9401 enclosure 9402 Operation Buttons 9403 External input terminal 9404 Microphone 9405 Speaker 9406 Light-emitting part 9410 Display device 9411 cabinet 9412 Display section 9413 Operation Buttons 9600 Television equipment 9601 enclosure 9603 Display section 9605 Stand 9607 Display section 9609 Operation Keys 9610 Remote Control Unit 9700 Digital Photo Frame 9701 enclosure 9703 Display section 9881 cabinet 9882 Display section 9883 Display section 9884 Speaker section 9885 Operation Keys 9886 Recording medium insertion section 9887 Connection terminal 9888 Sensor 9889 Microphone 9890 LED Lamp 9891 cabinet 9893 Connection section 9900 slot machines 9901 cabinet 9903 Display section 4503a Signal Line Drive Circuit 4504a Scan line drive circuit 4518a FPC 5121a Image 5121b Image 5122a Image 5122b Image 5123a Image 5123b Image

Claims

1. Each pixel has a first transistor, a second transistor, a capacitor, and a light-emitting element. The source or drain of the first transistor is electrically connected to the gate of the second transistor. The gate of the second transistor is electrically connected to the capacitor, The source or drain of the second transistor is a display device electrically connected to the light-emitting element, It comprises a first insulating layer, a first oxide layer, a second oxide layer, a third oxide layer, a second insulating layer, and a fourth oxide layer. The first insulating layer has a region that functions as a gate insulating layer for the second transistor and a region that functions as a dielectric for the capacitance. The first oxide layer has a region in contact with the upper surface of the first insulating layer, The first oxide layer has a channel formation region for the first transistor. The second oxide layer has a region that is in contact with the upper surface of the first insulating layer. The second oxide layer has a channel formation region for the second transistor. The third oxide layer has a region that is in contact with the upper surface of the first insulating layer. The third oxide layer has a region that functions as one of the pair of electrodes of the aforementioned capacitance, The second insulating layer has a region located above the first oxide layer, a region located above the second oxide layer, and a region located above the third oxide layer. The fourth oxide layer has a region located above the second insulating layer, The fourth oxide layer has a region that functions as a pixel electrode of the light-emitting element, In a plan view of the pixel, the channel length direction of the first transistor is along the first direction. A display device in which, in a plan view of the pixel, the channel length direction of the second transistor is aligned with the first direction.

2. Each pixel has a first transistor, a second transistor, a capacitor, and a light-emitting element. The source or drain of the first transistor is electrically connected to the gate of the second transistor. The gate of the second transistor is electrically connected to the capacitor, The source or drain of the second transistor is a display device electrically connected to the light-emitting element, It comprises a first insulating layer, a first oxide layer, a second oxide layer, a third oxide layer, a second insulating layer, and a fourth oxide layer. The first oxide layer, the second oxide layer, and the third oxide layer are translucent, The first insulating layer has a region that functions as a gate insulating layer for the second transistor and a region that functions as a dielectric for the capacitance. The first oxide layer has a region in contact with the upper surface of the first insulating layer, The first oxide layer has a channel formation region for the first transistor. The second oxide layer has a region that is in contact with the upper surface of the first insulating layer. The second oxide layer has a channel formation region for the second transistor. The third oxide layer has a region that is in contact with the upper surface of the first insulating layer. The third oxide layer has a region that functions as one of the pair of electrodes of the aforementioned capacitance, The second insulating layer has a region located above the first oxide layer, a region located above the second oxide layer, and a region located above the third oxide layer. The fourth oxide layer has a region located above the second insulating layer, The fourth oxide layer has a region that functions as a pixel electrode of the light-emitting element, In a plan view of the pixel, the channel length direction of the first transistor is along the first direction. A display device in which, in a plan view of the pixel, the channel length direction of the second transistor is aligned with the first direction.

3. In claim 1 or claim 2, A display device comprising the first oxide layer, the second oxide layer, and the third oxide layer, each containing indium.

4. In claim 1 or claim 2, A display device comprising the first oxide layer, the second oxide layer, and the third oxide layer, each containing indium, gallium, and zinc.

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