Shower head with integrated bypass channel

Abstract

The present invention provides a showerhead and system having an integrated flow path to bypass gas and minimize dead legs. [Solution] In a substrate processing system, the shower head 350 for the processing chamber comprises a body having an upper surface, a lower surface, and a side surface defining a plenum 352, and a face plate 354 provided on the lower surface of the body including a plurality of through holes. The plurality of through holes are in fluid communication with the plenum and the processing chamber. The shower head comprises an inlet 360 provided on one of the upper and side surfaces of the body, and a first passage 362 provided in the body. The first passage connects the inlet to the plenum. The shower head also comprises an outlet 368 provided on one of the upper and side surfaces of the body, and a second passage 370 provided in the body. The second passage connects the outlet to the plenum.

Description

Technical Field

[0001] [Cross - Reference to Related Applications] This application claims the benefit of U.S. Provisional Application No. 63 / 088,940, filed Oct. 7, 2020. The entire disclosure of the above - referenced application is incorporated herein by reference.

[0002] The present disclosure generally relates to substrate processing systems, and more particularly to a showerhead design having an integrated flow path for bypassing gas to minimize dead legs.

Background Art

[0003] The background description provided here is for the purpose of generally presenting the content of the present disclosure. Within the scope described in this background art section, research by the inventors named at the present time, as well as aspects of the description that cannot be separately regarded as prior art at the time of filing, are not admitted as prior art against the present disclosure, whether explicitly or implicitly.

[0004] A substrate processing system for performing deposition and / or etching typically includes a processing chamber having a pedestal. A substrate such as a semiconductor wafer can be placed on the pedestal during processing. A gas delivery system can introduce a process gas mixture containing one or more precursors into the processing chamber to deposit a film on the substrate or to etch the substrate. In some substrate processing systems, materials are deposited on the substrate by using an atomic layer deposition (ALD) process. In some substrate processing systems, plasmas can be collided within the processing chamber and / or an RF bias on the pedestal can be used to activate chemical reactions.

[0005] Various gas flow paths within a gas delivery system are used to deliver process gases, carrier gases, oxidizing gases, precursor gases, and / or purge gases to the processing chamber. Gas flow paths are defined by pipes, valves, manifolds, etc. A first gas can be delivered through the gas flow channel during the first part of the process, and no gas may be delivered or a second gas may be delivered during the second part of the process. The first gas may temporarily remain in the gas flow channel unless a purging process is performed to clean the gas flow channel. The portion of the gas flow channel that holds the stagnant gas is called a dead leg. The stagnant gas in the dead leg can decompose and cause defects on the substrate. [Overview of the Initiative]

[0006] The showerhead for the processing chamber comprises a body having an upper surface, a lower surface, and a side surface defining the plenum, and a plurality of through-holes provided on the lower surface of the body. The plurality of through-holes are in fluid communication with the plenum and the processing chamber. The showerhead comprises an inlet provided on one of the upper and side surfaces of the body, and a first passage provided in the body. The first passage connects the inlet to the plenum. The showerhead comprises an outlet provided on one of the upper and side surfaces of the body, and a second passage provided in the body. The second passage connects the outlet to the plenum.

[0007] In another characteristic, the outlet is located downstream of the inlet and is in fluid communication with the inlet.

[0008] In another feature, the inlet and outlet are located at both ends of the showerhead.

[0009] In another feature, the entrance and exit are connected to both ends of the plenum.

[0010] In another feature, the inlet and outlet are located at both ends of the showerhead and connect to both ends of the plenum.

[0011] In other features, the system comprises a showerhead and first and second valves connected to the inlet and outlet, respectively. The first valve is connected to a gas supply source. The second valve is connected to the exhaust port of the processing chamber.

[0012] In another feature, the system further comprises a controller configured to close a second valve, open a first valve to supply a first gas from a gas source to the inlet, then open a second valve to supply a second gas from the gas source through the first valve to the inlet in place of the first gas, and close the second valve after a predetermined time.

[0013] In another feature, the side extends vertically toward the bottom of the processing chamber, and the outlet is located at the bottom end of the side.

[0014] In another feature, the bottom edge of the side extends beyond at least a portion of the base positioned within the processing chamber.

[0015] In other features, the system comprises a showerhead and first and second valves connected to the inlet and outlet, respectively. The first valve is connected to a gas supply source. The second valve is in fluid communication with the exhaust port of the processing chamber.

[0016] In another feature, the system further comprises a controller configured to close a second valve, open a first valve to supply a first gas from a gas source to the inlet, then open a second valve to supply a second gas from the gas source through the first valve to the inlet in place of the first gas, and close the second valve after a predetermined time.

[0017] In another feature, the underside is attached to the side wall of the processing chamber.

[0018] In another feature, the outlet is located at the bottom edge of the side wall.

[0019] In other features, the system comprises a showerhead and first and second valves connected to the inlet and outlet, respectively. The first valve is connected to a gas supply source. The second valve is in fluid communication with the exhaust port of the processing chamber, located at the bottom of the processing chamber.

[0020] In another feature, the system further comprises a controller configured to close a second valve, open a first valve to supply a first gas from a gas source to the inlet, then open a second valve to supply a second gas from the gas source through the first valve to the inlet in place of the first gas, and close the second valve after a predetermined time.

[0021] In another feature, the showerhead is mounted on the top plate of the processing chamber and has a larger diameter than the base located inside the processing chamber.

[0022] In other features, the system comprises a showerhead and first and second valves positioned on a top plate and connected to the inlet and outlet, respectively. The first valve is connected to a gas supply source. The second valve is connected to the exhaust port of the processing chamber.

[0023] In another feature, the system further comprises a controller configured to close a second valve, open a first valve to supply a first gas from a gas source to the inlet, then open a second valve to supply a second gas from the gas source through the first valve to the inlet in place of the first gas, and close the second valve after a predetermined time.

[0024] In other features, the system comprises a showerhead and a first valve located on the top plate. The first valve is connected to the inlet and gas supply source. The outlet is located around the showerhead.

[0025] In another feature, the system further includes a second valve connected to the outlet. The second valve is in fluid communication with the exhaust port of the processing chamber, which is located at the bottom of the processing chamber.

[0026] In another feature, the system further includes a controller configured to close the second valve, open the first valve to supply the first gas from the gas source to the inlet, open the second valve when supplying the second gas from the gas source through the first valve to the inlet following the first gas, and close the second valve after a predetermined time.

[0027] Other fields to which the present disclosure is applicable will become apparent from the detailed description, the claims, and the drawings. The detailed description and the specific examples are for the purpose of illustration only and are not intended to limit the scope of the present disclosure.

Brief Description of the Drawings

[0028] The present disclosure will be more fully understood from the detailed description and the accompanying drawings.

[0029] [Figure 1A] FIG. 1A is a diagram showing an example of a substrate processing system including a processing chamber with a shower head according to the present disclosure. [Figure 1B] FIG. 1B is a diagram showing an example of a substrate processing system including a processing chamber with a shower head according to the present disclosure.

[0030] [Figure 2] FIG. 2 is a diagram showing an example of a shower head having a gas bypass path upstream of the shower head.

[0031] [Figure 3A] FIG. 3A is a diagram showing an example of a shower head having a bore and a gas bypass path downstream of the shower head according to the present disclosure.

[0032] [Figure 3B] FIG. 3B is a diagram showing an example of a shower head having a bore and a gas bypass path passing through the bottom of the bore according to the present disclosure. [Figure 3C]Figure 3C shows an example of a shower head according to the present disclosure, which has a bore and a gas bypass path passing through the bottom of the bore.

[0033] [Figure 4A] Figure 4A shows an example of a boreless shower head according to the present disclosure, which has a chamber wall defining a bore and a gas bypass path downstream of the shower head.

[0034] [Figure 4B] Figure 4B shows an example of a boreless shower head according to the present disclosure, which has a chamber wall defining a bore and a gas bypass path passing through the bottom of the bore.

[0035] [Figure 5A] Figure 5A shows an example of a shower head according to the present disclosure, which is mounted on the top of a processing chamber and has a gas bypass path that passes through the top of the processing chamber and is located downstream of the shower head.

[0036] [Figure 5B] Figure 5B shows an example of a shower head mounted on the upper part of a processing chamber according to the present disclosure, the shower head having a gas bypass path located downstream of the shower head and opening into the processing chamber.

[0037] [Figure 6] Figure 6 shows a method according to this disclosure for operating the showerheads shown in Figures 3A to 5B and providing a gas bypass path downstream of the showerheads.

[0038] In these drawings, reference numbers may be reused to refer to similar and / or identical elements. [Modes for carrying out the invention]

[0039] Showerheads are typically designed to distribute a gas flow uniformly across a substrate within a processing chamber. Uniform flow distribution is achieved by restricting the gas flow from the plenum within the showerhead to multiple holes in the showerhead's faceplate. However, restricting the gas flow in this way is problematic for rapid purging and / or transitions from one gas supply to another in processes such as atomic layer deposition (ALD). There is a direct trade-off between rapid ALD cycles / transitions and uniformity; improvement in one generally comes at the expense of the other.

[0040] Typically, the entire gas flow is distributed through holes in the faceplate of the showerhead, and all the gas enters the processing chamber through the holes and heads toward the substrate. Throughout this disclosure, the gas flow entering the processing chamber from the holes in the showerhead is referred to as the push, and the volume of gas entering the processing chamber from the holes in the showerhead and present between the showerhead and the substrate is referred to as the process volume.

[0041] In the ALD process, gas cycles / transitions occur frequently (e.g., approximately 100-2,000 times per substrate). A single step in the ALD cycle can take approximately 0.1-10 seconds. The transition from gas A to gas B occurs by pushing gas A together with gas B into the showerhead plenum and purging or exhausting gas A from the showerhead plenum. Specifically, to transition from gas A to gas B, gas A is pushed out of the plenum in the showerhead using gas B and enters the process volume through the holes in the showerhead. Minimizing the dead volume between the valve controlling the cycling (hereinafter referred to as the ALD valve) and the showerhead helps to speed up this process. Therefore, the ALD valve is placed as close to the showerhead inlet as possible.

[0042] However, this still leaves a volume between the ALD valve and the substrate as a dead volume, which is almost entirely defined by the geometric shape of the showerhead. For example, the supply line from the gas box to the ALD valve can generally have a volume of about 100-400cc, the showerhead volume can generally be about 300-600cc in the ALD process, and the showerhead holes can have a volume of about 2-10cc. Therefore, by diverting the gas flow after the plenum volume and before the showerhead holes, the cycle time can be significantly improved (i.e., shortened).

[0043] In addition to longer ALD cycle times, the transition phase between the gas cycle and flow conditions negatively impacts process performance. The gas flow through the showerhead becomes relatively non-uniform as it develops into a saturated steady state. This non-uniformity of the gas flow affects substrate uniformity, especially in processes sensitive to gas flow uniformity. Therefore, if the gas flow in the transition phase is diverted away from the substrate, and the substrate is exposed only to the fully developed gas flow, it is possible to improve substrate uniformity in addition to improving cycle time.

[0044] This disclosure provides an outlet path from the showerhead plenum to the chamber exhaust port, which reroutes the gas flow away from the process volume and represents a less restrictive path compared to the pore pattern of the showerhead. Throughout this disclosure, the gas flow that is rerouted from the pores of the showerhead and through the outlet path downstream of the showerhead plenum away from the process volume to the chamber exhaust port is referred to as a pull.

[0045] Several substrate processing systems according to this disclosure include a showerhead having an inlet POC (point of connection) from an ALD valve located near the edge or center of the processing chamber. The gas received from the ALD valve at the inlet is distributed in this order to a pre-distribution plenum, a primary plenum, a showerhead hole, and the substrate. A post-distribution plenum, having the same shape as and opposite to the primary plenum, may be provided according to this disclosure. The post-distribution plenum may be connected to a bypass line that extends directly to the chamber exhaust port. The bypass line POC may be located on the edge of the showerhead opposite to the inlet POC, or elsewhere. Throughout this disclosure, arrangements of two elements described as being located opposite each other include arrangements where the two elements are 180 degrees apart from each other, and also include other alternative arrangements of the two elements.

[0046] Since the primary plenum exhibits a pressure drop approximately 10 times less than that of the showerhead holes (constituting a 10 times less limit), gas can flow through the post-distribution plenum if a bypass path through it is open. In some embodiments, the disclosure provides a control valve for the post-distribution plenum that can be opened to bypass the gas flow through the post-distribution plenum in the right-hand stage of the ALD cycle.

[0047] In another embodiment, the gas flow can be diverted away from the showerhead plenum through a passage leading to the bottom of the showerhead bore, as described below. Since the bore terminates below the process volume (below the base), the gas diverted to the bottom of the showerhead bore can be directed to the chamber exhaust port without affecting the substrate. In this approach, the opening and closing of the passage can be controlled by installing a valve within the processing chamber.

[0048] Therefore, in some systems for diverting exhaust gases, the diversion occurs in a valve manifold block located upstream of the showerhead, leaving the showerhead as dead volume. However, this disclosure provides a diversion path integrated with the showerhead and located downstream of it. Specifically, instead of diverting the gas upstream from the showerhead, this disclosure provides a diversion path for the gas in the showerhead plenum to exit the showerhead, thereby preventing the diverted gas from flowing into the substrate (i.e., the diversion path does not go into the process volume). The diversion path is fluidly connected to the showerhead plenum, allowing the gas in the plenum to exit downstream from the plenum relatively quickly. The diversion path represents a minimal dead leg between the location of the diversion valve and the process volume, leaving only the showerhead holes and not the entire showerhead as the dead leg.

[0049] This disclosure is structured as follows: First, an example of a substrate processing system that can use a showerhead designed in accordance with this disclosure is shown and described with reference to Figures 1A and 1B. An example of an upstream gas bypass path of the showerhead is shown and described with reference to Figure 2. Subsequently, examples of various showerhead configurations including gas bypass paths designed in accordance with this disclosure are shown and described with reference to Figures 3A to 5B. Next, a method for operating the showerheads shown in Figures 3A to 5B and providing a gas bypass path in accordance with this disclosure is shown and described with reference to Figure 6.

[0050] Figures 1A and 1B show an example of a substrate processing system 100 comprising a processing chamber 102 configured to process a substrate using thermal atomic layer deposition (T-ALD). The processing chamber 102 surrounds the other components of the substrate processing system 100. The processing chamber 102 includes a substrate support (e.g., a base) 104. During processing, the substrate 106 is placed on the base 104.

[0051] One or more heaters 108 (e.g., a heater array) can be placed in a ceramic plate positioned on a metal base plate of the pedestal 104 to heat the substrate 106 during processing. One or more additional heaters, called zone heaters or primary heaters (not shown), can be placed on the ceramic plate above or below the heaters 108. In addition, although not shown, a cooling system with cooling channels through which a coolant can flow to cool the pedestal 104 may be placed in the base plate of the pedestal 104, and one or more temperature sensors may be placed in the pedestal 104 to sense the temperature of the pedestal 104.

[0052] The processing chamber 102 includes a gas distribution device 110, such as a showerhead, for introducing and distributing process gas into the processing chamber 102. Various examples of showerhead configurations designed according to this disclosure are shown and described in detail with reference to Figures 3A to 5B. In one example shown, the showerhead 110 may include a stem portion 112 having one end connected to the upper surface of the processing chamber 102. The base portion of the showerhead 110 is generally cylindrical and extends radially outward from the opposite end of the stem portion 112 at a location spaced apart from the upper surface of the processing chamber 102. The base portion includes a plenum 113 and a faceplate 114 including a plurality of outlets or features (e.g., slots or through holes) for dispersing the gas toward the substrate 106.

[0053] Furthermore, although not shown, the shower head 110 may include a heating plate and a cooling plate. The heating plate may include one or more heaters, and the cooling plate may include cooling channels through which a coolant can be circulated. In addition, one or more temperature sensors may be placed inside the shower head 110 to sense the temperature of the shower head 110.

[0054] The gas supply system 130 comprises one or more gas sources 132-1, 132-2, ..., and 132-N (collectively referred to as gas source 132), where N is an integer greater than 1. The gas sources 132 can supply process gases, cleaning gases, purging gases, inert gases, etc. The gas sources 132 are connected to a valve manifold 140 by valves 134-1, 134-2, ..., and 134-N (collectively referred to as valve 134) and mass flow controllers 136-1, 136-2, ..., and 136-N (collectively referred to as mass flow controller 136). In the example shown in Figure 1B, the valve manifold 140 comprises a plurality of valves 111-1, 111-2, ..., and 111-N (collectively referred to as valve 111) that can be controlled to supply one or more gases from the gas sources 132 to the shower head 110. The valve manifold 140 is positioned close to the processing chamber 102 so that when a mixture of gases is used, the mixing of the gases occurring within the valve manifold 140 takes place as close as possible to the inlet point into the processing chamber 102. The output of the valve manifold 140 is connected to the showerhead 110. A second valve 115 connects a bypass route from the plenum 113 to the chamber exhaust port, as will be described in detail below. In some processes, although not shown, it is possible to supply remotely generated plasma to the processing chamber 102.

[0055] A fluid supply system 139 supplies coolant to the cooling system in the base 104 and the cooling channels in the showerhead 110. A temperature controller 150 may be connected to the heater 108, zone heater, and temperature sensor in the base 104, as well as the heating plate and temperature sensor in the showerhead 110. The temperature controller 150 can control the power supply to the heater 108 and zone heater in the base 104, as well as the flow of coolant through the cooling system, thereby controlling the temperature of the base 104 and the substrate 106. The temperature controller 150 can also control the power supply to the heater located on the heating plate of the showerhead 110, and the flow of coolant through the cooling channels located on the cooling plate of the showerhead 110, thereby controlling the temperature of the showerhead 110.

[0056] Valve 156 and pump 158 are used to maintain a pressure below atmospheric pressure inside the processing chamber 102 during substrate processing and to discharge the reactant from the processing chamber 102. The system controller 160 controls the components of the substrate processing system 100, including valve 111 and a second valve 115 in the valve manifold 140, as will be described in detail below.

[0057] Throughout the following description, the showerhead inlet is shown and described as being connected to an ALD valve connected to a gas supply source (e.g., element 130 shown in Figure 1A) via a gas line. Alternatively, the inlet may be connected to a valve manifold (e.g., element 140 shown in Figure 1A) comprising multiple valves (e.g., element 111 shown in Figure 1B) each connected to multiple gas sources via multiple gas lines, and one or more valves in the valve manifold may be controlled and operated as described below with reference to the ALD valve.

[0058] Figure 2 shows an example of a shower head 300 having a gas bypass route upstream of the shower head 300. The shower head 300, having a bore 301, comprises a plenum 302 and a faceplate 304 including a plurality of outlets or features (e.g., slots or through holes). A valve (referred to as an ALD valve as described above) 306, connected to a gas supply source via a first gas line 314, is located near the edge or center of a processing chamber 308 adjacent to the inlet 310 of the shower head 300. The inlet 310 is adjacent to the plenum 302. A passage 312 in the shower head 300 between the inlet 310 and the plenum 302 connects the inlet 310 to the plenum 302.

[0059] The first port of the ALD valve 306 is connected to a gas supply source via a first gas line 314. The second port of the ALD valve 306 is connected to an inlet 310 via a second gas line 316. The third port of the ALD valve 306 is connected to an exhaust system to which the chamber exhaust port 320 is connected via a third gas line (called a gas bypass route) 318.

[0060] During ALD processing, in each ALD cycle, the showerhead 300 receives gas A from the gas supply source through the first and second gas lines 314 and 316 via the ALD valve 306, and then receives gas B. The gas enters the showerhead 300 through the inlet 310 and passage 312 and reaches the plenum 302 of the showerhead 300.

[0061] When receiving each gas, the first and second ports of the ALD valve 306 are open, and the third port of the ALD valve 306 is closed. The showerhead 300 disperses each gas from the plenum 302 through the outlet at the faceplate 304 toward the substrate 322 located on the base 324 in the processing chamber 308.

[0062] During the ALD cycle, when transitioning from gas A to gas B, gas B flows through the first and second ports of the ALD valve 306, and the third port of the ALD valve 306, connected to the gas bypass path 318, opens, diverting gas A to the exhaust system to which the chamber exhaust port 320 is connected. Subsequently, the third port of the ALD valve 306 is closed, and gas B is dispersed from the plenum 302 towards the substrate 322 via the outlet in the faceplate 304. This process is repeated when transitioning from gas B to gas A.

[0063] In the showerhead 300, the entire gas flow in the plenum 302 is distributed to the holes in the faceplate 304, and all the gas enters the processing chamber 308 through the holes in the faceplate 304 and heads toward the substrate 322. To transition from gas A to gas B, gas B first pushes gas A from the plenum 302 through the holes in the faceplate 304 into the process volume (the area between the faceplate 304 and the substrate 322 of the showerhead), and then gas B flows from the plenum 302 through the holes in the faceplate 304 into the process volume.

[0064] The ALD valve 306 is positioned as close as possible to the gas inlet 310 of the showerhead 300 to minimize the amount of dead volume between the ALD valve 306 and the showerhead 300. However, this still leaves a volume between the ALD valve 306 and the substrate 322 as dead volume, which is almost entirely defined by the geometric shape of the showerhead 300.

[0065] Figures 3A to 5B illustrate various examples of showerhead designs according to this disclosure, which include a gas bypass route downstream of the showerhead plenum rather than upstream of the showerhead. By bypassing the gas flow after the plenum volume and before the holes in the showerhead, cycle time is significantly improved (i.e., shortened) and uniformity is enhanced.

[0066] Figures 3A and 3C show showerheads with bores. Figures 4A and 4B show boreless showerheads where the walls of the processing chamber define the bore. Figures 5A and 5B show showerheads mounted on top of the processing chamber (e.g., mounted directly on top of the processing chamber or mounted using a chandelier-like stem). Each of these configurations with its own gas bypass path is described in more detail here.

[0067] Figure 3A shows an example of a shower head 350 according to the present disclosure, having a bore 351 and a gas bypass path downstream of the plenum 352 of the shower head 350. The shower head 350 comprises a plenum 352 and a faceplate 354 including a plurality of outlets or features (e.g., slots or through holes).

[0068] A first valve (also called an ALD valve as described above) 356 is located at the edge or center of a processing chamber (for example, element 102 shown in Figure 1A) adjacent to the inlet 360 of the showerhead 350. The inlet 360 is adjacent to the plenum 352. A first passage 362 within the showerhead 350 between the inlet 360 and the plenum 352 connects the inlet 360 to the plenum 352.

[0069] The first port of the first valve 356 is connected to a gas supply source (e.g., element 130 shown in Figure 1A) via the first gas line 364. The second port of the first valve 356 is connected to the inlet 360 via the second gas line 366. The first valve 356 is not connected to an exhaust system to which a chamber exhaust port (e.g., similar to element 320 shown in Figure 2) is connected.

[0070] The showerhead 350 includes an outlet 368 located at the end opposite the inlet 360. The outlet 368 is close to the plenum 352. A second valve 372 is located at the end of the showerhead 350 opposite the first valve 356. The second valve 372 is close to the edge of the processing chamber. A second passage 370 in the showerhead 350 between the outlet 368 and the plenum 352 connects the outlet 368 to the plenum 352. The first port of the second valve 372 is connected to the outlet 368 via a third gas line 374. The second port of the second valve 372 is connected to an exhaust system to which the chamber exhaust port is connected via a fourth gas line 376.

[0071] The second passage 370, the third gas line 374, and the second valve 372 constitute a gas bypass path for the showerhead 350. The gas bypass paths formed by the second passage 370, the third gas line 374, and the second valve 372 (hereinafter referred to as gas bypass paths 370, 374, and 372) are integrated with the showerhead 350 and are located downstream of the showerhead 350's plenum 352.

[0072] During ALD processing, in each ALD cycle, the showerhead 350 receives gas A from the gas supply source through the first and second gas lines 364 and 366 via the first valve 356, and then gas B. The gas enters the showerhead 350 through the inlet 360 and the first passage 362, and reaches the plenum 352 of the showerhead 350. A controller (for example, element 160 shown in Figure 1A) controls the first and second valves 356 and 372, operating the ports of the first and second valves 356 and 372 as follows:

[0073] When receiving each gas, the first and second ports of the first valve 356 are open, and the first port of the second valve 372 is closed. The second port of the second valve 372 may be open or closed. The showerhead 350 disperses each gas through the outlet in the faceplate 354 toward the substrate 380 located on the base 382 in the processing chamber.

[0074] During the transition from gas A to gas B in the ALD cycle, gas B flows into the plenum 352 through the first and second ports of the first valve 356, the first and second gas lines 364, 366, the inlet 360, and the first passage 362. The first port (and the second port, if closed) of the second valve 372 is opened to connect the plenum 352 to gas bypass routes 370, 374, and 372. The residual gas A in the plenum 352 is bypassed through gas bypass routes 370, 374, and 372 to the exhaust system via the fourth gas line 376.

[0075] During the transition, gas diversion paths 370, 374, and 372 divert the gas flow from the process volume to the chamber exhaust port, representing a less restrictive path to the chamber exhaust port compared to the hole pattern of the showerhead 350. Subsequently, the first port (and optionally the second port) of the second valve 372 is closed, and gas B is dispersed from the plenum 352 towards the substrate 380 through the outlet in the faceplate 354. This process is repeated when transitioning from gas B to gas A.

[0076] During each transition, gas bypass paths 370, 374, and 372 provide a path for the gas in the plenum 352 to exit the showerhead 350, thereby preventing the path from going to the substrate 380 (i.e., not into the process volume between the showerhead 350 and the substrate 380). The gas bypass paths 370, 374, and 372 allow the gas in the plenum 352 to exit downstream from the plenum 352 relatively quickly, representing a minimal dead leg between the second valve 372 and the process volume, leaving only the volume of the hole in the faceplate 354 as the dead leg, rather than the entire showerhead 350.

[0077] Figures 3B and 3C show an example of a shower head 400 according to the present disclosure, having a bore 401 and a gas bypass path through a valve at the bottom of the bore 401 of the shower head 400. In Figure 3C, the outer diameter of the bore 401 is approximately the same as the diameter of the side wall of the processing chamber 402 (e.g., element 102 shown in Figure 1A). During the transition, the gas enters the area of ​​the processing chamber 402 below the base 404 located within the processing chamber 402 through the valve at the bottom of the bore 401. Because the gas enters the area below the base 404 through the bottom of the bore 401, the gas exiting the gas bypass path does not react with the substrate 406 located on the base 404. Instead, the gas from the gas bypass path exits the processing chamber 402 through the chamber exhaust port 408.

[0078] In Figure 3B, the showerhead 400 comprises a plenum 410 and a faceplate 412 including multiple outlets or features (e.g., slots or through holes). The showerhead 400 includes an inlet 414 adjacent to the plenum 410. A first passage 416 within the showerhead 400 between the inlet 414 and the plenum 410 connects the inlet 414 to the plenum 410.

[0079] A first valve (also called an ALD valve as described above) 418 is positioned at the edge or center of the processing chamber 402, close to the inlet 414 of the showerhead 400. The first port of the first valve 418 is connected to a gas supply source (e.g., element 130 shown in Figure 1A) via a first gas line 420. The second port of the first valve 418 is connected to the inlet 414 via a second gas line 422. The first valve 418 is not connected to the exhaust system to which the chamber exhaust port 408 is connected.

[0080] The second valve 424 and the third valve 426 are located at the bottom of the bore 401 at both ends of the bore 401. The second and third passages 428 and 430 in the bore 401 between the plenum 410 and the first ports of the second and third valves 424 and 426 connect both ends of the plenum 410 to the first ports of the second and third valves 424 and 426, respectively. The second ports of the second and third valves 424 and 426 are configured to open into the processing chamber 402 and are in fluid communication with the chamber exhaust port 408, which is connected to the exhaust system.

[0081] The second and third passages 428, 430 and the second and third valves 424, 426 constitute a gas bypass path for the showerhead 400. The gas bypass path formed by the second and third passages 428, 430 and the second and third valves 424, 426 (hereinafter referred to as bypass paths 428, 424, 430, 426) is integrated with the showerhead 400 and is located downstream of the plenum 410 of the showerhead 400.

[0082] During ALD processing, in each ALD cycle, the showerhead 400 receives gas A from the gas supply source through the first and second gas lines 420 and 422 via the first valve 418, and then gas B. The gas enters the showerhead 400 through the inlet 414 and the first passage 416, and reaches the plenum 410 of the showerhead 400. A controller (e.g., element 160 shown in Figure 1A) controls the first, second, and third valves 418, 424, and 426 to operate the ports of the first, second, and third valves 418, 424, and 426 as follows:

[0083] When receiving each gas, the first and second ports of the first valve 418 are open, and the first port of the second and third valves 424 and 426 is closed. The second port of the second and third valves 424 and 426 may be open or closed. The showerhead 400 disperses each gas through the outlet in the faceplate 412 toward the substrate 406 located on the base 404 in the processing chamber 402.

[0084] During the transition from gas A to gas B in the ALD cycle, gas B flows into the plenum 410 through the first and second ports of the first valve 418, the first and second gas lines 420 and 422, the inlet 414, and the first passage 416. The first ports (and, if closed, the second ports) of the second and third valves 424 and 426 are opened to connect the plenum 410 to gas bypass routes 428, 424, 430, and 426. The residual gas A in the plenum 410 is bypassed through the gas bypass routes 428, 424, 430, and 426 to the exhaust system via the chamber exhaust port 408. Since the second ports of the second and third valves 424 and 426 are open into the processing chamber 402 below the base 404, the residual gas A exiting from the second ports of the second and third valves 424 and 426 does not react with the substrate 406.

[0085] During the transition, gas detour paths 428, 424, 430, and 426 divert the gas flow from the process volume to the chamber exhaust port 408, representing a less restrictive path to the chamber exhaust port 408 compared to the hole pattern of the showerhead 400. Subsequently, the first ports (and optionally the second ports) of the second and third valves 424 and 426 are closed, and gas B is dispersed from the plenum 410 towards the substrate 406 through the outlet at the faceplate 412. This process is repeated when transitioning from gas B to gas A.

[0086] During each transition, gas bypass paths 428, 424, 430, and 426 provide a path for the gas in the plenum 410 to exit the showerhead 400, thereby preventing the path from going to the substrate 406 (i.e., not into the process volume between the showerhead 400 and the substrate 406). The gas bypass paths 428, 424, 430, and 426 allow the gas in the plenum 410 to exit downstream from the plenum 410 relatively quickly, representing a minimal dead leg between the second and third valves 424, 426 and the process volume, leaving only the volume of the holes in the faceplate 412 as the dead leg, rather than the entire showerhead 400.

[0087] In some embodiments, the second and third valves 424, 426 may be omitted. The gas from the plenum 410 can enter the area of ​​the processing chamber 402 beneath the base 404 through the passages 428, 430 and flow toward the chamber exhaust port 408 without reacting with the substrate 406.

[0088] Figure 4A shows an example of a boreless shower head 450 according to the present disclosure, having a chamber wall defining a bore 451 and a gas bypass path downstream of the shower head 450. The shower head 450 comprises a plenum 452 and a faceplate 454 including a plurality of outlets or features (e.g., slots or through holes).

[0089] A first valve (also called an ALD valve as described above) 456 is located at the edge or center of a processing chamber (for example, element 102 shown in Figure 1A) adjacent to the inlet 460 of the showerhead 450. The inlet 460 is adjacent to the plenum 452. A first passage 462 within the showerhead 450 between the inlet 460 and the plenum 452 connects the inlet 460 to the plenum 452.

[0090] The first port of the first valve 456 is connected to a gas supply source (e.g., element 130 shown in Figure 1A) via the first gas line 464. The second port of the first valve 456 is connected to an inlet 460 via the second gas line 466. The first valve 456 is not connected to an exhaust system to which a chamber exhaust port (e.g., similar to element 408 shown in Figure 3C) is connected.

[0091] The showerhead 450 includes an outlet 468 located at the end opposite the inlet 460. The outlet 468 is close to the plenum 452. A second valve 472 is located at the end of the showerhead 450 opposite the first valve 456. The second valve 472 is close to the edge of the processing chamber. A second passage 470 in the showerhead 450 between the outlet 468 and the plenum 452 connects the outlet 468 to the plenum 452. The first port of the second valve 472 is connected to the outlet 468 via a third gas line 474. The second port of the second valve 472 is connected to an exhaust system to which the chamber exhaust port is connected via a fourth gas line 476.

[0092] The second passage 470, the third gas line 474, and the second valve 472 constitute a gas bypass path for the showerhead 450. The gas bypass paths formed by the second passage 470, the third gas line 474, and the second valve 472 (hereinafter referred to as gas bypass paths 470, 474, and 472) are integrated with the showerhead 450 and are located downstream of the showerhead 450's plenum 452.

[0093] During ALD processing, in each ALD cycle, the showerhead 450 receives gas A from the gas supply source through the first and second gas lines 464 and 466 via the first valve 456, and then gas B. The gas enters the showerhead 450 through the inlet 460 and the first passage 462, and reaches into the plenum 452. A controller (e.g., element 160 shown in Figure 1A) controls the first and second valves 456 and 472, operating the ports of the first and second valves 456 and 472 as follows:

[0094] When receiving each gas, the first and second ports of the first valve 456 are open, and the first port of the second valve 472 is closed. The second port of the second valve 472 may be open or closed. The showerhead 450 disperses each gas through the outlet in the faceplate 454 toward the substrate 480 located on the base 482 in the processing chamber.

[0095] During the transition from gas A to gas B in the ALD cycle, gas B flows into the plenum 452 through the first and second ports of the first valve 456, the first and second gas lines 464 and 466, the inlet 460, and the first passage 462. The first port (and the second port, if closed) of the second valve 472 is opened to connect the plenum 452 to gas bypass routes 470, 474, and 472. The residual gas A in the plenum 452 is bypassed through gas bypass routes 470, 474, and 472 to the exhaust system via the fourth gas line 476.

[0096] During the transition, gas bypass paths 470, 474, and 472 redirect the gas flow from the process volume to the chamber exhaust port, representing a less restrictive path to the chamber exhaust port compared to the hole pattern of the showerhead 450. Subsequently, the first port (and optionally the second port) of the second valve 472 is closed, and gas B is dispersed from the plenum 452 towards the substrate 480 through the outlet in the faceplate 454. This process is repeated when transitioning from gas B to gas A.

[0097] During each transition, gas bypass paths 470, 474, and 472 provide a path for the gas in the plenum 452 to exit the showerhead 450, thereby preventing the path from going to the substrate 480 (i.e., not into the process volume between the showerhead 450 and the substrate 480). The gas bypass paths 470, 474, and 472 allow the gas in the plenum 452 to exit downstream from the plenum 452 relatively quickly, representing a minimal dead leg between the second valve 472 and the process volume, leaving only the volume of the hole in the faceplate 454 as the dead leg, rather than the entire showerhead 450.

[0098] Figure 4B shows an example of a boreless showerhead 500 according to the present disclosure, having a chamber wall defining a bore 501 and a gas bypass path through a valve at the bottom of the bore 501. During the transition, the gas enters the area of ​​the processing chamber below a base 504 located within the processing chamber (e.g., similar to element 102 shown in Figure 1A) through the bottom of the bore 501. Because the gas enters the area below the base 504 through the bottom of the bore 501, the gas exiting the gas bypass path does not react with the substrate 506 located on the base 504. Instead, the gas from the gas bypass path exits the processing chamber through a chamber exhaust port (e.g., similar to element 408 shown in Figures 3A-3C).

[0099] The showerhead 500 comprises a plenum 510 and a faceplate 512 including a plurality of outlets or features (e.g., slots or through holes). The showerhead 500 has an inlet 514 adjacent to the plenum 510. A first passage 516 within the showerhead 500 between the inlet 514 and the plenum 510 connects the inlet 514 to the plenum 510.

[0100] A first valve (also called an ALD valve as described above) 518 is positioned at the edge or center of the processing chamber, close to the inlet 514 of the showerhead 500. The first port of the first valve 518 is connected to a gas supply source (e.g., element 130 shown in Figure 1A) via a first gas line 520. The second port of the first valve 518 is connected to the inlet 514 via a second gas line 522. The first valve 518 is not connected to any exhaust system to which the chamber exhaust port is connected.

[0101] The second valve 524 and the third valve 526 are located at the bottom of the bore 501 at both ends. The second and third passages 528 and 530 within the bore 501 are connected to the first ports of the second and third valves 524 and 526, respectively. The second and third passages 528 and 530 within the bore 501 are also connected fourth and fifth passages 529 and 531 within the showerhead 500, respectively, which are connected to the first and second opposing ends of the plenum 510, respectively.

[0102] For example, to connect a second passage 528 in the bore 501 to a fourth passage 529 in the shower head 500, there may be mating holes and slots in the bore 501 and the shower head 500 respectively (or vice versa), with a seal surrounding the holes and slots. Similarly, to connect a third passage 530 in the bore 501 to a fifth passage 531 in the shower head 500, there may be mating holes and slots in the bore 501 and the shower head 500 respectively (or vice versa), with a seal surrounding them.

[0103] Therefore, the first end of the plenum 510 is connected to the first port of the second valve 524 via a fourth passage 529 in the showerhead 500 and a second passage 528 in the bore 501, and the second end of the plenum 510 is connected to the first port of the third valve 526 via a fifth passage 531 in the showerhead 500 and a third passage 530 in the bore 501. The second ports of the second and third valves 524 and 526 are configured to open into the processing chamber and are in fluid communication with the chamber exhaust port connected to the exhaust equipment.

[0104] The fourth, second, fifth, and third passages 529, 528, 531, 530, and the second and third valves 524, 526 constitute a gas bypass path for the showerhead 500. The gas bypass path formed by the fourth, second, fifth, and third passages 529, 528, 531, 530, and the second and third valves 524, 526 (hereinafter referred to as the gas bypass paths 529, 528, 524, 531, 530, 526) is integrated with the showerhead 500 and is located downstream of the plenum 510 of the showerhead 500.

[0105] During ALD processing, in each ALD cycle, the showerhead 500 receives gas A from the gas supply source through the first and second gas lines 520 and 522 via the first valve 518, and then gas B. The gas enters the showerhead 500 through the inlet 514 and the first passage 516 and reaches into the plenum 510. A controller (e.g., element 160 shown in Figure 1A) controls the first, second, and third valves 518, 524, and 526 to operate the ports of the first, second, and third valves 518, 524, and 526 as follows:

[0106] When receiving each gas, the first and second ports of the first valve 518 are open, and the first port of the second and third valves 524 and 526 is closed. The second port of the second and third valves 524 and 526 may be open or closed. The showerhead 500 disperses each gas through the outlet at the faceplate 512 toward the substrate 506 located on the base 504 in the processing chamber.

[0107] During the transition from gas A to gas B in the ALD cycle, gas B flows into the plenum 510 through the first and second ports of the first valve 518, the first and second gas lines 520 and 522, the inlet 514, and the first passage 516. The first ports (and, if closed, the second ports) of the second and third valves 524 and 526 are opened to connect the plenum 510 to gas bypass routes 529, 528, 524, 531, 530, and 526. The residual gas A in the plenum 510 is bypassed through the gas bypass routes 529, 528, 524, 531, 530, and 526 to the exhaust system via the chamber exhaust port. Since the second ports of the second and third valves 524 and 526 are open into the processing chamber below the base 504, the residual gas A exiting from the second ports of the second and third valves 524 and 526 does not react with the substrate 506.

[0108] During the transition, gas bypass paths 529, 528, 524, 531, 530, and 526 redirect the gas flow from the process volume to the chamber exhaust port, representing a less restrictive path to the chamber exhaust port compared to the hole pattern of the showerhead 500. Subsequently, the first ports (and optionally the second ports) of the second and third valves 524 and 526 are closed, and gas B is dispersed from the plenum 510 towards the substrate 506 through the outlet at the faceplate 512. This process is repeated when transitioning from gas B to gas A.

[0109] During each transition, gas bypass paths 529, 528, 524, 531, 530, and 526 provide a path for the gas in the plenum 510 to exit the showerhead 500, thereby preventing the path from going to the substrate 506 (i.e., not into the process volume between the showerhead 400 and the substrate 506). The gas bypass paths 529, 528, 524, 531, 530, and 526 allow the gas in the plenum 510 to exit downstream from the plenum 510 relatively quickly, representing a minimal dead leg between the second and third valves 524, 526 and the process volume, leaving only the volume of the holes in the faceplate 512 as the dead leg, rather than the entire showerhead 500.

[0110] In some embodiments, the second and third valves 524, 526 may be omitted. The gas from the plenum 510 can enter the area of ​​the processing chamber below the base 504 through the passages 528, 530 and flow toward the chamber exhaust port without reacting with the substrate 506.

[0111] Figure 5A shows an example of a shower head 550 according to the present disclosure. The shower head 550 is mounted on top of a processing chamber 551 (e.g., element 102 shown in Figure 1A), with only its top and side walls shown. The shower head 550 is mounted coplanar (i.e., directly) with the top of the processing chamber 551, or mounted using a chandelier-like stem portion 553. The shower head 550 comprises a plenum 552 and a faceplate 554 including a plurality of outlets or features (e.g., slots or through holes). The shower head 550 includes a gas bypass path downstream of the plenum 552 according to the present disclosure.

[0112] A first valve (also called an ALD valve as described above) 556 is located at the edge or center of the processing chamber 551, close to the inlet 560 of the showerhead 550. The inlet 560 is close to the plenum 552. The first port of the first valve 556 is connected to a gas supply source (e.g., element 130 shown in Figure 1A) via a first gas line 564. The second port of the first valve 556 is connected to the chamber wall via a second gas line 566. The first valve 556 is not connected to any exhaust system to which the chamber exhaust port is connected.

[0113] The second valve 572 is positioned at the end of the showerhead 550 opposite to the first valve 556. The second valve 572 is close to the edge of the processing chamber 551 and the outlet 568 of the showerhead 550. The first port of the second valve 572 is connected to the chamber wall via a third gas line 574. The second port of the second valve 572 is connected to the exhaust system to which the chamber exhaust port is connected via a fourth gas line 576.

[0114] A first passage 562 in the showerhead 550 between the inlet 560 and the first end of the plenum 552 connects the inlet 560 to the first end of the plenum 552. A second passage 570 in the showerhead 550 between the outlet 568 and the second end of the plenum 552 opposite to the first end connects the outlet 568 to the second end of the plenum 552. A third passage 567 in the chamber wall connects to a second gas line 566. A fourth passage 569 in the chamber wall connects to a third gas line 574.

[0115] When the shower head 550 is connected to the processing chamber 551 by the stem portion 553, a fifth gas line 571 is connected between the inlet 560 and a third passage 567 in the chamber wall, and a sixth gas line 573 is connected between the outlet 568 and a fourth passage 569 in the chamber wall. Thus, when the shower head 550 is connected to the processing chamber 551 by the stem portion 553, the second port of the first valve 556 is connected to the inlet 560 of the shower head 550 via the second gas line 566, the third passage 567 in the chamber wall, and the fifth gas line 571, and the second port of the second valve 572 is connected to the outlet 568 of the shower head 550 via the third gas line 574, the fourth passage 569 in the chamber wall, and the sixth gas line 573.

[0116] If the shower head 550 is mounted coplanar (i.e., directly) with the processing chamber 551 without the stem portion 553, the fifth and sixth gas lines 571 and 573 are omitted. A third passage 567 in the chamber wall connects to a first passage 562 in the shower head 550 at the inlet 560, and a fourth passage 569 in the chamber wall connects to a second passage 570 in the shower head 550 at the outlet 568. For example, at the inlet 560 and the outlet 568, there may be holes and slots in the chamber wall and the shower head 550 that fit together (or vice versa), and seals surround the holes and slots.

[0117] Therefore, when the shower head 550 is mounted coplanar with the processing chamber 551, the second port of the first valve 556 is connected to the first end of the plenum 552 via the second gas line 566, the third passage 567 in the chamber wall, and the first passage 562 in the shower head 550, and the second port of the second valve 572 is connected to the second end of the plenum 552 via the third gas line 574, the fourth passage 569 in the chamber wall, and the second passage 570 in the shower head 550.

[0118] A second passage 570 in the showerhead 550, a sixth gas line 573 (if present, depending on whether the showerhead 550 is mounted to the processing chamber 551 directly or via the stem portion 553), a fourth passage 569 in the chamber wall, a third gas line 574, and a second valve 572 constitute a gas bypass path for the showerhead 550. The gas bypass paths formed by the second passage 570, the sixth gas line 573 (if present), the fourth passage 569, the third gas line 574, and the second valve 572 (hereinafter referred to as gas bypass paths 570, 573, 569, 574, and 572) are integrated with the showerhead 550 and are located downstream of the showerhead 550's plenum 552.

[0119] During ALD processing, in each ALD cycle, the showerhead 550 receives gas A from the gas supply source via the first valve 556 through the first and second gas lines 564, 566, the third passage 567, and, if present, the fifth gas line 571, followed by gas B. The gas enters the plenum 552 through the inlet 560 and the first passage 562. A controller (e.g., element 160 shown in Figure 1A) controls the first and second valves 556, 572 to operate the ports of the first and second valves 556, 572 as follows:

[0120] When receiving each gas, the first and second ports of the first valve 556 are open, and the first port of the second valve 572 is closed. The second port of the second valve 572 may be open or closed. The showerhead 550 disperses each gas through the outlet in the faceplate 554 toward the substrate 580 located on the base 582 in the processing chamber 551.

[0121] During the transition from gas A to gas B in the ALD cycle, gas B flows into the plenum 552 through the first and second ports of the first valve 556, the first and second gas lines 564, 560, the third passage 567, the fifth gas line 571 (if present), the inlet 560, and the first passage 562. The first port (and the second port, if closed) of the second valve 572 is opened to connect the plenum 552 to gas bypass routes 570, 573, 569, 574, and 572. The residual gas A in the plenum 552 is bypassed into the exhaust system through gas bypass routes 570, 573, 569, 574, and 572, and through the fourth gas line 576.

[0122] During the transition, gas detour paths 570, 573, 569, 574, and 572 divert the gas flow from the process volume to the chamber exhaust port, representing a less restrictive path to the chamber exhaust port compared to the hole pattern of the showerhead 550. Subsequently, the first port (and optionally the second port) of the second valve 572 is closed, and gas B is dispersed from the plenum 552 towards the substrate 580 through the outlet at the faceplate 554. This process is repeated when transitioning from gas B to gas A.

[0123] During each transition, gas bypass paths 570, 573, 569, 574, and 572 provide a path for the gas in the plenum 552 to exit the showerhead 550, thereby preventing the path from going to the substrate 580 (i.e., not into the process volume between the showerhead 550 and the substrate 580). The gas bypass paths 570, 573, 569, 574, and 572 allow the gas in the plenum 552 to exit downstream from the plenum 552 relatively quickly, representing a minimal dead leg between the second valve 572 and the process volume, leaving only the volume of the hole in the faceplate 554 as the dead leg, rather than the entire showerhead 550.

[0124] Figure 5B shows an example of a shower head 600 according to the present disclosure, having a gas bypass path downstream of the shower head 600. The shower head 600 is mounted on top of a processing chamber 601 (e.g., element 102 shown in Figure 1A), with only its top and side walls shown. The shower head 600 is mounted coplanar (i.e., directly) with the top of the processing chamber 601, or mounted using a chandelier-like stem portion 603.

[0125] The outer diameter of the showerhead 600 is larger than the outer diameter of the base 604 placed inside the processing chamber 601. During the transition, the gas enters the processing chamber 601 by passing around the showerhead 600. Because the diameter of the showerhead 600 is larger than that of the base 604, the gas exiting the showerhead 600 tends to flow towards the bottom of the processing chamber 601 without reacting with the substrate 506 placed on the base 504. The gas exiting the showerhead 600 flows towards the bottom of the processing chamber 601 and exits the processing chamber 601 through the chamber exhaust port (for example, similar to element 408 shown in Figures 3A-3C).

[0126] The showerhead 600 comprises a plenum 610 and a faceplate 612 including a plurality of outlets or features (e.g., slots or through holes). The showerhead 600 has an inlet 614 adjacent to the plenum 610. A first passage 616 in the showerhead 500 between the inlet 614 and the plenum 610 connects the inlet 614 to the plenum 610. The showerhead 600 has outlets 615 and 617 at first and second opposing ends of the showerhead 600. Second and third passages 619 and 621 in the showerhead 500 between the outlets 615 and 617 and the opposing ends of the plenum 610 connect the outlets 615 and 617 to the plenum 610, respectively.

[0127] A first valve (also called an ALD valve as described above) 618 is located at the edge or center of the processing chamber 601, close to the inlet 614 of the showerhead 500. The first port of the first valve 618 is connected to a gas supply source (e.g., element 130 shown in Figure 1A) via a first gas line 620. The second port of the first valve 618 is connected to the chamber wall via a second gas line 622. A fourth passage 623 in the chamber wall is connected to the second gas line 622. The first valve 614 is not connected to the exhaust system to which the chamber exhaust port is connected.

[0128] When the shower head 600 is connected to the processing chamber 601 by the stem portion 603, the third gas line 625 is connected between the inlet 614 and the fourth passage 623 in the chamber wall. Thus, when the shower head 600 is connected to the processing chamber 601 by the stem portion 603, the second port of the first valve 618 is connected to the inlet 614 of the shower head 600 via the second gas line 622, the fourth passage 623 in the chamber wall, and the third gas line 625.

[0129] If the shower head 600 is mounted coplanar (i.e., directly) with the processing chamber 601 without the stem portion 603, the third gas line 625 is omitted. The fourth passage 623 in the chamber wall connects to the first passage 616 in the shower head 600 at the inlet 614. For example, at the inlet 614, there may be holes and slots that fit together in the chamber wall and the shower head 600, respectively (or vice versa), with seals surrounding the holes and slots. Thus, when the shower head 600 is mounted directly to the processing chamber 601, the second port of the first valve 618 connects to the first end of the plenum 610 via the second gas line 622, the fourth passage 623 in the chamber wall, and the first passage 616 in the shower head 600.

[0130] In this embodiment, the second and third passages 619, 621 within the showerhead 600 and the outlets 615, 617 of the showerhead 600 constitute a gas bypass path for the showerhead 600. The gas bypass path formed by the second and third passages 619, 621 and the outlets 615, 617 (hereinafter referred to as the gas bypass paths 619, 615, 621, 617) is integrated with the showerhead 600 and is located downstream of the plenum 610 of the showerhead 600.

[0131] In another embodiment, the second and third valves 624 and 626 may be positioned close to the outlets 615 and 617 of the plenum 610, respectively. The first ports of the second and third valves 624 and 626 may be connected to the outlets 615 and 617 via fourth and fifth gas lines 628 and 630, respectively. The second ports of the second and third valves 624 and 626 are configured to open into the processing chamber 601 and are in fluid communication with the chamber exhaust port, which is connected to the exhaust system. Again, because the diameter of the showerhead 600 is larger than the diameter of the base 604, the gas exiting the second ports of the second and third valves 624 and 626 does not react with the substrate 606 on the base and flows towards the bottom of the processing chamber 601 and exits through the chamber exhaust port.

[0132] In this other embodiment, which includes second and third valves 624 and 626, the second and third passages 619 and 621, the fourth and fifth gas lines 628 and 630, and the second and third valves 624 and 626 in the showerhead 600 constitute a gas bypass path for the showerhead 600. The gas bypass path formed by the second and third passages 619 and 621, the fourth and fifth gas lines 628 and 630, and the second and third valves 624 and 626 (hereinafter referred to as the gas bypass paths 619, 628, 624, 621, 630, 626) is integrated with the showerhead 600 and is located downstream of the plenum 610 of the showerhead 600.

[0133] During ALD processing, in each ALD cycle, the showerhead 600 receives gas A from the gas supply source via the first valve 618 through the first and second gas lines 620, 622, the fourth passage 623, and, if present (i.e., if the showerhead is fitted with the stem portion 603), the third gas line 625, followed by gas B. The gas enters the plenum 610 through the inlet 614 and the first passage 616. A controller (e.g., element 160 shown in Figure 1A) controls the ports of the first valve 618 and the second and third valves 624, 626, if present, and operates them as follows:

[0134] When receiving each gas, the first and second ports of the first valve 618 are open, and the first ports of the second and third valves 624 and 626 (if used) are closed. The second ports of the second and third valves 624 and 526 may be open or closed. If the second and third valves 624 and 626 are not present, the outlets 615 and 617 of the showerhead 600 are in fluid communication with the processing chamber 601. The showerhead 600 disperses each gas through the outlet in the faceplate 612 toward the substrate 606 located on the base 504 in the processing chamber 601.

[0135] During the transition from gas A to gas B in the ALD cycle, gas B flows into the plenum 610 through the first and second ports of the first valve 618, the first and second gas lines 620 and 622, the fourth passage 623, the third gas line 625 if present, the inlet 614, and the first passage 616. If the second and third valves 624 and 626 are not used, residual gas A in the plenum 610 is diverted into the processing chamber 601 through passages 619 and 621 and outlets 615 and 617 (i.e., through gas diverter routes 619, 615, 621, and 617), and further diverted to the exhaust system via the chamber exhaust port. Alternatively, if the second and third valves 624 and 626 are used, the first ports (and the second ports, if closed) of the second and third valves 624 and 626 are opened to connect the plenum 610 to the gas bypass routes 619, 628, 624, 621, 630, and 626. The residual gas A in the plenum 610 is bypassed through the gas bypass routes 619, 628, 624, 621, 630, and 626 to the exhaust system via the chamber exhaust port.

[0136] During the transition, gas bypass paths 619, 615, 621, 617 (or gas bypass paths 619, 628, 624, 621, 630, 626) redirect the gas flow from the process volume to the chamber exhaust port, representing a less restrictive path to the chamber exhaust port compared to the hole pattern of the showerhead 600. Subsequently, gas B is distributed from the plenum 610 toward the substrate 606 via the outlet in the faceplate 612. Alternatively, if the second and third valves 624, 626 are used, the first port (and optionally the second port) of the second and third valves 624, 626 is closed, and gas B is distributed from the plenum 610 toward the substrate 606 via the outlet in the faceplate 612. This process is repeated when transitioning from gas B to gas A.

[0137] During each transition, gas bypass paths 619, 615, 621, 617 (or gas bypass paths 619, 628, 624, 621, 630, 626) provide a path for the gas in the plenum 610 to exit the showerhead 600, thereby preventing the path from going to the substrate 606 (i.e., from going into the process volume between the showerhead 600 and the substrate 606). The gas bypass routes 619, 615, 621, 617 (or gas bypass routes 619, 628, 624, 621, 630, 626) allow the gas in the plenum 610 to exit downstream from the plenum 610 relatively quickly, representing minimal dead legs between outlets 615, 617 and the process volume, or between the second and third valves 624, 626 and the process volume, leaving only the volume of the holes in the faceplate 612 as dead legs, rather than the entire showerhead 600.

[0138] Figure 6 illustrates a method 650 according to this disclosure for operating the showerheads shown in Figures 3A to 5B and providing a gas bypass path downstream of the showerheads. For example, method 650 can be implemented by a controller (e.g., element 160 shown in Figure 1A) during an ALD process carried out in a processing chamber (e.g., element 102 shown in Figure 1A) using any of the showerheads shown in Figures 3A to 5B. In the following description, the term control refers to an operation performed by the controller.

[0139] In 652, the control opens an inlet valve (e.g., ALD valves 356, 418, 456, 518, 556, or 618 shown in Figures 3A to 5B) and closes one or more outlet valves (e.g., elements 372, 424 and 426, 472, 524 and 526, 572, or 624 and 626 shown in Figures 3A to 5B). In 654, the control supplies gas (e.g., gas A) through the inlet valve to the showerhead inlet (e.g., elements 360, 414, 460, 514, 560, or 614 shown in Figures 3A to 5B).

[0140] In step 656, the control determines whether it is time to switch the gas supply (i.e., transition from supplying gas A to supplying gas B). If it is not time to switch the gas supply, the control returns to step 654. If it is time to switch the gas supply, the control proceeds to step 658.

[0141] In step 658, the control opens one or more outlet valves. If the configuration shown in Figure 5B does not include valves 624, 624, the control skips this step and proceeds to 660. In step 660, the control switches the gas supply to the showerhead inlet via the inlet valve (i.e., supplies gas B). In step 662, the control closes one or more outlet valves after a predetermined time has elapsed since opening one or more valves. Again, if the configuration shown in Figure 5B does not include valves 624, 624, the control skips this step and proceeds to 664.

[0142] In 664, the control determines whether the process being carried out in the processing chamber using the showerhead (e.g., ALD) is complete. The control returns to 656 and continues switching the gas supplied to the showerhead until the process is complete. The control terminates when the process is complete. By controlling one or more output valves located downstream of the showerhead during the gas transition, method 650 provides one or more gas bypass paths downstream of the showerhead as described above.

[0143] The foregoing description is purely illustrative and is not intended to limit the Disclosure, its application, or its use in any way. The broad teachings of this Disclosure can be implemented in various forms. Thus, while this Disclosure includes specific examples, the true scope of this Disclosure should not be limited to such examples, as other modifications will become apparent upon consideration of the drawings, specification, and the claims below.

[0144] It should be understood that one or more steps in the method may be performed in a different order (or simultaneously) without altering the principles of the disclosure. Furthermore, although each embodiment is described above as having a particular feature, it is possible to implement one or more of these features described in relation to any embodiment of the disclosure in other embodiments and / or combine them with any feature of any other embodiment (even if such combinations are not expressly described). In other words, the described embodiments are not mutually exclusive, and substituting one or more embodiments with one another is within the scope of the disclosure.

[0145] The spatial and functional relationships between elements (e.g., modules, circuit elements, semiconductor layers, etc.) are described using a variety of terms, such as “connected,” “engaged,” “joined,” “adjacent,” “next to,” “above,” “upwards,” “below,” and “positioned.” Furthermore, when a relationship between a first element and a second element is described in the above disclosure, unless it is explicitly described as “direct,” the relationship may be a direct relationship in which no other intervening elements exist between the first and second elements, or it may be an indirect relationship in which one or more intervening elements exist (spatially or functionally) between the first and second elements. As used herein, the expression “at least one of A, B, and C” should be interpreted in the sense of logic (A or B or C) using non-exclusive logic OR, and not in the sense of “at least one of A, at least one of B, and at least one of C.”

[0146] In some embodiments, the controller is part of a system, and such a system may be part of the examples described above. Such a system may comprise semiconductor processing equipment including one or more processing tools, one or more chambers, one or more processing platforms, and / or specific processing components (such as a pedestal, a gas flow system, etc.). These systems may be integrated with electronic equipment for controlling system operation before, during, and after processing of semiconductor wafers or substrates. Such electronic equipment may be called a “controller” and may control various components or sub-components of one or more systems.

[0147] The controller may be programmed to control any of the processes disclosed herein, depending on the processing requirements and / or the type of system. Such processes include supplying processing gas, setting temperature (e.g., heating and / or cooling), setting pressure, setting vacuum, setting power, setting radio frequency (RF) generator, setting RF matching circuit, setting frequency, setting flow rate, setting fluid supply, setting position and operation, loading and unloading wafers to and from tools and other transfer tools connected to or interlocked with a particular system, and / or loading and unloading wafers to and from a load lock.

[0148] In a broad sense, a controller may be defined as an electronic device having various integrated circuits, logic, memory, and / or software that receive and issue instructions, control operations, enable cleaning operations, enable endpoint measurements, etc. Integrated circuits may include chips in the form of firmware that store program instructions, digital signal processors (DSPs), chips defined as application-specific integrated circuits (ASICs), and / or one or more microprocessors, i.e., microcontrollers that execute program instructions (e.g., software).

[0149] Program instructions are instructions communicated to the controller in the form of various individual settings (or program files) that may define operational parameters for executing a particular process on or for a semiconductor wafer or for a system. In some embodiments, the operational parameters may be part of a recipe defined by a process engineer to realize one or more processing steps in the fabrication of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or wafer dies.

[0150] In some embodiments, the controller may be part of a computer that is integrated with or coupled to the system, or otherwise networked to the system, or coupled to such a computer, or a combination thereof. For example, the controller may be in the “cloud,” or it may be all or part of the fab host computer system. This enables remote access to wafer processing. The computer may enable remote access to the system to monitor the current progress of fabrication operations, review the history of past fabrication operations, review trends or performance criteria from multiple fabrication operations, change the parameters of the current process, set processing steps following the current process, or start a new process.

[0151] In some examples, a remote computer (e.g., a server) can provide process recipes to the system over a network. Such a network may include a local network or the internet. The remote computer may include a user interface that allows for the entry or programming of parameters and / or settings, which are then communicated from the remote computer to the system. In some examples, the controller receives instructions in the form of data. Such data identifies parameters for each processing step performed during one or more operations. It should be understood that the parameters may be specific to the type of process being performed and the type of tools the controller is configured to work with or control.

[0152] Therefore, as described above, the controller may be distributed by comprising, for example, one or more individual controllers that are networked together and cooperate toward a common purpose (such as the processes and controls described herein). An example of a distributed controller for such purposes would be one or more integrated circuits on a chamber that communicate with one or more integrated circuits that are remotely located (for example, at the platform level or as part of a remote computer) and combined to control the processes in the chamber.

[0153] Exemplary systems may include, but are not limited to, plasma etching chambers or modules, deposition chambers or modules, spin rinse chambers or modules, metal plating chambers or modules, cleaning chambers or modules, bevel edge etching chambers or modules, physical vapor deposition (PVD) chambers or modules, chemical vapor deposition (CVD) chambers or modules, atomic layer deposition (ALD) chambers or modules, atomic layer etching (ALE) chambers or modules, ion implantation chambers or modules, tracking chambers or modules, and any other semiconductor processing systems that may be used in connection with or for the fabrication and / or manufacture of semiconductor wafers.

[0154] As described above, depending on one or more process steps performed by the tool, the controller may communicate with one or more other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, nearby tools, tools located throughout the factory, a main computer, another controller, or tools used for material handling to load and unload wafer containers to and from tool locations and / or load ports within the semiconductor manufacturing plant.

Claims

1. A shower head for a processing chamber, A body having an upper surface, a lower surface, and sides that define the plenum, A plurality of through holes provided on the lower surface of the main body, wherein the plurality of through holes are in fluid communication with the plenum and the processing chamber, An entrance provided on one of the upper surface and the side surface of the main body, A first passage provided in the main body, the first passage comprising a first passage connecting the entrance to the plenum, An outlet provided on one of the upper surface and the side surface of the main body, A second passage provided in the main body, wherein the second passage connects the outlet to the plenum. A shower head equipped with [a specific feature].

2. A shower head according to claim 1, The outlet is located downstream of the inlet and is in fluid communication with the inlet, and is a showerhead.

3. A shower head according to claim 1, The inlet and outlet are located at both ends of the shower head.

4. A shower head according to claim 1, The inlet and outlet are showerheads connected to both ends of the plenum.

5. A shower head according to claim 1, A shower head, wherein the inlet and outlet are located at both ends of the shower head and are connected to both ends of the plenum.

6. The shower head according to claim 1, First and second valves connected to the inlet and outlet, respectively. Equipped with, The first valve is connected to a gas supply source, The second valve is connected to the exhaust port of the processing chamber. system.

7. The system according to claim 6, The second valve is closed, and the first valve is opened to supply the first gas from the gas supply source to the inlet. When supplying a second gas from the gas supply source through the first valve to the inlet instead of the first gas, the second valve is opened. The second valve is closed after a predetermined time. A system further comprising a controller configured in such a way.

8. A shower head according to claim 1, The aforementioned side extends vertically toward the bottom of the processing chamber, The outlet is located at the bottom end of the side surface, Shower head.

9. A shower head according to claim 8, The bottom end of the side surface extends beyond at least a portion of the base positioned within the processing chamber, forming a shower head.

10. The shower head according to claim 8, First and second valves connected to the inlet and outlet, respectively. Equipped with, The first valve is connected to a gas supply source, The second valve is in fluid communication with the exhaust port of the processing chamber. system.

11. The system according to claim 10, The second valve is closed, and the first valve is opened to supply the first gas from the gas supply source to the inlet. When supplying a second gas from the gas supply source through the first valve to the inlet instead of the first gas, the second valve is opened. The second valve is closed after a predetermined time. A system further comprising a controller configured in such a way.

12. A shower head according to claim 1, The lower surface is a shower head attached to the side wall of the processing chamber.

13. A shower head according to claim 12, The outlet is a showerhead located at the bottom end of the side wall.

14. The shower head according to claim 13, First and second valves connected to the inlet and outlet, respectively. Equipped with, The first valve is connected to a gas supply source, The second valve is in fluid communication with the exhaust port of the processing chamber, which is located at the bottom of the processing chamber. system.

15. The system according to claim 14, The second valve is closed, and the first valve is opened to supply the first gas from the gas supply source to the inlet. When supplying a second gas from the gas supply source through the first valve to the inlet instead of the first gas, the second valve is opened. The second valve is closed after a predetermined time. A system further comprising a controller configured in such a way.

16. A shower head according to claim 1, The shower head is mounted on the top plate of the processing chamber and has a diameter larger than the base placed inside the processing chamber.

17. The shower head according to claim 16, The first and second valves are arranged on the top plate and connected to the inlet and outlet, respectively. Equipped with, The first valve is connected to a gas supply source, The second valve is connected to the exhaust port of the processing chamber. system.

18. The system according to claim 17, The second valve is closed, and the first valve is opened to supply the first gas from the gas supply source to the inlet. When supplying a second gas from the gas supply source through the first valve to the inlet instead of the first gas, the second valve is opened. The second valve is closed after a predetermined time. A system further comprising a controller configured in such a way.

19. The shower head according to claim 16, The first valve and the top plate are located on the top plate. Equipped with, The first valve is connected to the inlet and the gas supply source, The outlet is located around the shower head. system.

20. The system according to claim 19, A second valve connected to the aforementioned outlet Furthermore, The second valve is in fluid communication with the exhaust port of the processing chamber, which is located at the bottom of the processing chamber. system.

21. The system according to claim 20, The second valve is closed, and the first valve is opened to supply the first gas from the gas supply source to the inlet. When supplying a second gas from the gas supply source through the first valve to the inlet instead of the first gas, the second valve is opened. The second valve is closed after a predetermined time. A system further comprising a controller configured in such a way.

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